KR19990003520A - Manufacturing Method of Plasma Display Panel - Google Patents

Abstract

The present invention discloses a method of manufacturing a plasma display panel. A method of manufacturing a plasma display panel according to the present invention is provided on a back substrate having an address electrode covered with a first dielectric layer, and formed on a first dielectric layer of the back substrate to define independent discharge spaces and to prevent coarse torque between pixels. In the method of manufacturing a plasma display panel, a discharge holding electrode is formed to face the barrier ribs and the rear substrate, and includes a front substrate on which the second dielectric layer and the protective layer are stacked. The address electrode formed on the back substrate and the bus electrode formed on the front substrate may be formed by a metal plating method.

Description

Manufacturing Method Of Plasma Display Panel

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma display panel, and more particularly, to a method of manufacturing a plasma display panel in which electrodes formed on a front substrate and a rear substrate are formed by a metal plating method.

In general, a plasma display panel (PDP) is composed of an array of discharge cells capable of independently discharging, and discharges each discharge cell independently according to an external electrical signal to generate a desired video signal. It is a flat panel display device to reproduce.

Since the PDP can make the thickness between the back substrate and the back substrate less than about 1 mm, the thickness and weight of the display device can be significantly reduced compared to the CRT display device using an electron gun. In addition, by forming a wider gap between the rear substrate and the front substrate to define an independent discharge space, a larger screen can be obtained than the liquid crystal display device, and a narrow screen which is the weakest point of the liquid crystal display device can be obtained. It has the advantage of improving the viewing angle.

1 is a cross-sectional view for explaining an AC type surface discharge type PDP according to the prior art, wherein the PDP is formed of an array of discharge cells capable of independent discharge, and as shown, the discharge cell is formed of a first dielectric layer. A back substrate 1 on which an address electrode 2 covered by (3) is formed, and a discharge sustaining electrode composed of a transparent electrode 5 and a bus electrode 6 arranged to face the back substrate 1; On the anti-vibration holding electrode, an independent discharge space is defined between the front substrate 4 having the second dielectric layer 7 and the protective layer 8 laminated therebetween, and the rear substrate 1 and the front substrate 4. And barrier ribs 9 formed to prevent cross-talk between the pixels.

In addition, one phosphor 10 selected from red, blue, or green is coated on a portion of the discharge space to realize colorization during gas discharge, and the inside of the remaining discharge space is discharge gas 11 such as neon or xenon. Is filled.

However, in the PDP according to the related art, respective electrodes formed on the back substrate 1 and the front substrate 4 are formed through a sputtering and etching process or are formed by a printing technique, and the electrode wiring Since the length of the field must be long, in order to reduce the resistance of the wiring, the thickness of the wiring is formed thick as a few μm. Accordingly, the method of forming the electrodes by the sputtering method has a limitation in terms of mass productivity, and there is a problem in that the efficiency of material use is lowered because the unnecessary metal material must be removed through an etching process.

In addition, when the electrodes are formed using a printing technique, the substrate may be deformed due to the heat treatment process, and it is difficult to fix the electrodes.

Accordingly, an object of the present invention is to provide a method of manufacturing a PDP capable of achieving high definition of electrodes by forming electrodes on the back substrate and the front substrate using a metal plating method.

In addition, an object of the present invention is to provide a method of manufacturing a PDP that can prevent deformation of the substrate by the heat treatment process by forming electrodes on the back substrate and the front substrate using a metal plating method.

In addition, an object of the present invention is to provide a PDP manufacturing method that can improve the aperture ratio by easily reducing the line width of the electrodes by forming the electrodes using a metal plating method.

1 is a cross-sectional view for explaining a plasma display panel according to the prior art.

2A to 2E are cross-sectional views of a series of processes for explaining a method of forming a bus electrode on a front substrate using a metal plating method according to the present invention.

3A to 3C are a series of cross-sectional views for explaining a method of forming an address electrode on a rear substrate using a metal plating method according to the present invention.

4A through 4C are cross-sectional views of a series of processes for explaining a method of forming a bus electrode on a front substrate using a metal plating method according to another embodiment of the present invention.

* Explanation of symbols for main parts of the drawings

20, 40: front substrate 21, 41: transparent electrode

22: first photosensitive film pattern 23, 31, 42: seed layer

24: second photosensitive film pattern 25, 33, 44: plating film

26, 34, 45: diffusion barrier 27, 46: dielectric film

28, 47: MgO film 30: back substrate

32, 43: photosensitive film pattern 35: partition wall

36 phosphor

The above object is to provide a rear substrate having an address electrode covered with a first dielectric layer, a partition wall formed on the first dielectric layer of the rear substrate to define an independent discharge space, and to prevent cross-talk between pixels, and the rear substrate; In the method of manufacturing a plasma display panel, the discharge sustaining electrode comprising a transparent electrode and a bus electrode is disposed to face each other, and includes a front substrate having a second dielectric layer and a protective layer stacked thereon. The address electrode formed on the substrate and the bus electrode formed on the front substrate are achieved by the method of manufacturing a PDP according to the present invention, characterized in that it is formed by metal plating.

According to the present invention, since the electrodes are formed by the metal plating method, the overall PDP manufacturing process can be simplified.

EXAMPLE

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

2A to 2E are a series of process diagrams for explaining a method of forming a bus electrode on a front substrate using a metal plating method. Referring to FIG. 2A, transparent, such as ITO and SnO ₂ , on a front substrate 20 are illustrated. Transparent electrodes 21 are formed using a conductive film. In this case, the transparent electrode 21 is formed in a dot or stripe shape according to discharge characteristics.

Referring to FIG. 2B, a first photosensitive film exposing a bus electrode predetermined region, ie, a portion of the transparent electrode 21 and a portion of the front substrate 20 adjacent thereto, on the front substrate 20 including the transparent electrode 21. The pattern 22 is formed. Thereafter, a seed layer 23 is formed on the exposed projection electrode 21 and the substrate 20, and then the first photoresist layer pattern 22 is removed. Here, the seed layer 23 is formed to increase the adhesion between the plated film to be formed later and the substrate, the thickness is less than 0.5μm.

Referring to FIG. 2C, the second photosensitive layer pattern 24 is formed on the transparent electrode 21 and the front substrate 20 so that the seed layer 23 is exposed, and the metal on the exposed seed layer 23 is exposed. A plating film 25 having a thickness of less than about 100 μm is formed using the plating method, and a diffusion barrier film 26 is formed on the second photosensitive film pattern 24 and the plating film 25. Here, the diffusion barrier 26 is for preventing a chemical reaction between the dielectric film and the plated film when the dielectric film to be formed later is formed, and is formed to a thickness of less than about 0.5 μm.

Referring to FIG. 2D, after the diffusion barrier layer 26 is patterned to form a bus electrode including the seed layer 23, the plating layer 25, and the diffusion barrier layer 26, the second photoresist layer pattern 24 is removed. . On the other hand, the bus electrode is formed so as to overlap only a portion with the transparent electrode 21, as shown, may be formed so as to completely overlap the transparent electrode 21 as necessary. In this case, in FIG. 2B, the first photoresist pattern is formed such that the transparent electrode is completely exposed, a seed layer is formed on the entire top of the transparent electrode and the substrate adjacent thereto, and then the bus completely overlaps with the transparent electrode through the above-described process. Form an electrode.

Referring to FIG. 2E, the dielectric film 27 and the MgO film 28 are stacked on the front substrate 20 so as to completely cover the transparent electrode 21 and the bus electrode. The dielectric film 27 is intended to protect the discharge holding electrode made of the transparent electrode 21 and the bus electrode during gas discharge.

3A to 3D are a series of process diagrams for explaining a method of forming an address electrode on a rear substrate using a metal plating method. Referring to FIG. 3A, a thickness of less than about 0.5 μm on the rear substrate 30 is illustrated. The seed layer 31 which has is formed. The seed layer 31 is to increase the adhesion between the substrate and the plating film to be formed later, as in the above-described process. Subsequently, a photosensitive film pattern 32 is formed on the seed layer 31 to expose a predetermined portion thereof.

Referring to FIG. 3B, a plating film 33 having a thickness of less than about 100 μm is formed on the exposed seed layer 31 by using a metal plating method, and then a dielectric film and a plating film to be formed later on the whole are formed. In order to prevent the chemical reaction between (33), a diffusion barrier film 34 having a thickness of less than about 0.5 μm is formed.

Referring to FIG. 3C, after removing the diffusion barrier layer 34 except for the upper portion of the plating layer 33, the photoresist layer pattern 32 is removed to remove the seed layer 31, the plating layer 33, and the diffusion barrier layer 34. To form an address electrode. Then, the dielectric film 35 is formed on the back substrate 30 so as to completely cover the address electrode, and the partition 36 having a predetermined height and width is formed on the dielectric film 35 on both sides of the address electrode. The phosphor 36 is applied to a predetermined thickness in a discharge cell defined by the partition wall 36.

Subsequently, although not shown, the front substrate on which the discharge sustaining electrode is formed and the back substrate on which the address electrode is formed are bonded together, and then a discharge gas is injected into the discharge cell to complete the PDP.

4A to 4C are a series of process diagrams for explaining a method of forming a bus electrode on a front substrate using a metal plating method according to another embodiment of the present invention. Referring to FIG. 4A, the front substrate 40 may be formed. In the state where the transparent electrode 41 in the form of a dot or stripe is formed on the seed layer 42, the seed layer 42 is formed to a thickness of less than about 0.5 μm on the upper surface of the object, and the portion of the seed layer 42 of the predetermined area of the bus electrode is exposed. The photoresist pattern 43 is formed on the seed layer 42.

Referring to FIG. 4B, after the plating film 44 is formed on the exposed seed layer 42 using the metal plating method, diffusion is performed to prevent chemical reaction between the dielectric layer and the plating film to be formed later on the whole. The prevention film 45 is formed to have a thickness of less than 0.5 μm.

Referring to FIG. 4C, after removing the diffusion barrier layer 45 except the upper portion of the plating layer 44, the photosensitive layer pattern 43 is removed to remove the seed layer 42, the plating layer 44, and the diffusion barrier layer 45. To form a bus electrode. As described above, the bus electrode is formed to overlap a part of the transparent electrode 41, but may be formed to completely overlap the transparent electrode 41 as necessary. Subsequently, the dielectric film 46 and the MgO film 47 are laminated on the front substrate 40 on which the discharge organic electrode composed of the transparent electrode 41 and the bus electrode is formed.

As described above, the PDP manufacturing method of the present invention simplifies the PDP manufacturing process as compared to the conventional method of forming the electrodes using the sputtering process by forming the electrodes formed on the back substrate and the front substrate by a metal plating method. It is possible to reduce the manufacturing cost of PDP because it does not use expensive sputter equipment. In addition, the aperture ratio can be improved by reducing the width of the electrode.

Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.

Claims (19)

A back substrate having an address electrode covered with a first dielectric layer, a partition wall formed on the first dielectric layer of the back substrate to define independent discharge spaces and preventing cross-talk between pixels, and disposed to face the back substrate, and a transparent electrode And a discharge sustaining electrode formed of a bus electrode, wherein the discharge sustaining electrode includes a front substrate on which a second dielectric layer and a protective layer are stacked. The bus electrode formed on the front substrate is formed by a metal plating method. The method of claim 1, wherein the method of forming an example electrode using the metal plating method comprises: forming a seed layer on the back substrate, forming a photoresist pattern on the seed layer to expose a predetermined portion thereof; Forming a plating film having a predetermined thickness on the seed layer exposed by a pattern, forming a diffusion prevention film having a predetermined thickness on the photoresist pattern and the plating film, and patterning the diffusion prevention film so that a diffusion prevention film remains only on the plating film. And then removing the photoresist pattern and the seed layer under the photoresist pattern. The method of claim 2, wherein the seed layer is formed to a thickness of less than 0.5 μm. The method of claim 2, wherein the plating film is formed to a thickness of less than 100 μm. The method of claim 2, wherein the diffusion barrier layer is formed to a thickness of less than 0.5 μm. The method of claim 1, wherein the method of forming the bus electrode using the metal plating method comprises depositing and patterning a transparent conductive film on the front substrate to form transparent electrodes, coating a photoresist on the entire upper substrate, and applying the transparent electrode. Patterning the photoresist such that a portion of the electrode and a portion of the front substrate adjacent thereto are exposed, forming a seed layer having a predetermined thickness on the exposed transparent electrode and the front substrate adjacent thereto, and forming the first photoresist pattern Removing, forming a second photoresist pattern on the exposed transparent electrode and the front substrate, forming a doe film on the seed layer, and spreading a diffusion barrier layer having a predetermined thickness on the entire upper substrate on which the plating layer is formed. Forming the diffusion barrier layer such that the diffusion barrier layer remains only on the plating layer; Method of producing a plasma display panel comprising the step of removing the vast pattern. The method of claim 6, wherein the transparent electrode is formed in a dot shape. The method of claim 6, wherein the transparent electrode is formed in a stripe shape. The method of claim 6, wherein the seed layer is formed to a thickness of less than 0.5 μm. The method of claim 6, wherein the plating film is formed to a thickness of less than 100 μm. The method of claim 6, wherein the diffusion barrier layer is formed to a thickness of less than 0.5 μm. The plasma display panel manufacturing method of claim 6, wherein the bus electrode including the seed layer, the plating layer, and the diffusion barrier layer is formed to completely overlap the transparent electrode. The method of claim 1, wherein the method of forming the bus electrode using the metal plating method comprises depositing and patterning a transparent conductive film on the front substrate to form transparent electrodes, and a seed layer having a predetermined thickness on the transparent electrode and the front substrate. Forming a photoresist pattern on the seed layer to expose a portion of the transparent electrode and a portion of the seed layer adjacent to the front substrate; forming a plated film having a predetermined thickness on the exposed seed layer And forming a diffusion barrier layer over the entire surface of the front substrate on which the plating layer is formed, and patterning the diffusion barrier layer so that the diffusion barrier layer remains only on the plating layer, and then forming a photoresist pattern and a seed layer under the photoresist pattern. Method of manufacturing a plasma display panel comprising the step of removing. The method of claim 13, wherein the transparent electrode is formed in a dot shape. The method of claim 13, wherein the transparent electrode is formed in a stripe shape. The method of claim 13, wherein the seed layer is formed to a thickness of less than 0.5 μm. The method of claim 13, wherein the plating layer is formed to a thickness of less than 100 μm. The method of claim 13, wherein the diffusion barrier layer is formed to a thickness of less than 0.5 μm. The method of claim 13, wherein the bus electrode including the seed layer, the plating film, and the diffusion barrier layer is formed to completely overlap the transparent electrode.