KR19990001950A - Semiconductor Process Gas Analysis Device - Google Patents

Abstract

The present invention relates to a semiconductor process gas analyzer using a mixed standard gas formed by mixing a standard gas and a high purity gas.

In the present invention, the high purity gas supply line and the high purity gas supply line and the standard gas supply line supplied with the standard gas is connected to each other, the semiconductor process gas analysis device configured to be connected to the trace amount analyzer, the high purity gas supply line and the standard A buffer unit having a predetermined internal space is formed at a point where the gas supply line is connected.

Therefore, there is an effect that can easily mix the high purity gas and the standard gas to form a mixed standard gas of the correct concentration.

Description

Semiconductor Process Gas Analysis Device

The present invention relates to a semiconductor process gas analyzer, and more particularly, to a semiconductor process gas analyzer using a mixed standard gas formed by mixing a standard gas and a high purity gas.

Generally, more than 40 kinds of gases (Gas) having properties such as reactivity, corrosiveness, and toxicity are used in the semiconductor device manufacturing process. These gases are also used as process gases used directly in the semiconductor device manufacturing process and as auxiliary gases to maintain the process environment. It is also used as a carrier gas to move the process gas to the process chamber where the process proceeds.

Therefore, if the above-mentioned gas contains ionic impurities, molecular impurities, metallic impurities, or the like above the reference value, it may cause process defects. Therefore, the analytical process of periodically measuring the concentration of impurities contained in the gas using an analyzer Going on.

1 is a schematic configuration diagram of a conventional semiconductor process gas analyzer.

Referring to FIG. 1, a purifier 12 in which a high purity gas supply source 10 for selecting nitrogen (N ₂ ) gas, argon (Ar) gas, helium (He) gas, and the like, which is supplied in units of L, is purged. And a first flow controller 14 for controlling the amount of gas passing through the purifier 12 is connected. As the refiner 12, a form in which getter grains of an alloy material, in which zirconium (Zr), vanadium (V), iron (Fe), and the like are mixed at a predetermined ratio, adsorb impurities and a catalyst may be used. .

In addition, the second gas flow regulator 18 for adjusting the amount of gas passing through the standard gas supply source 16 to select the nitrogen gas, argon gas, helium gas, etc. in ppm unit with a certain amount of impurity is added in kPa unit Is connected.

Also, after the first flow controller 14 and the second flow controller 18 are connected to each other, an extremely small analyzer such as an Atmospheric Pressure Ionization Mass Spectrometer, in which an ionizer, an analyzer, and a detector are installed. It is connected with (20).

Therefore, the pure gas selected from nitrogen gas, argon gas, and helium gas is discharged from the high purity gas supply source 10 and supplied to the purifier 12 to purify foreign substances that may be included in the pure gas.

The pure gas that has undergone the purification process passes through the first flow controller 14 and is discharged after the amount of gas is adjusted.

At this time, the same standard gas as that supplied from the pure gas supply source 10 among the nitrogen gas, argon gas, and helium gas in a ppm unit in which a certain amount of impurities are added is discharged from the standard gas supply source 116, and the second flow regulator 18 As the amount of gas is adjusted and diluted with the pure gas passing through the first flow regulator 14, analytical reference gas, that is, a mixed standard gas, is formed in ppb.

Subsequently, the specific concentration of analytical reference gas is supplied to a trace analyzer 20 such as an atmospheric pressure ionization mass spectrometer, and then ionized to calculate the number of impurity components in the ionized analytical reference gas, that is, the frequency of existence.

Therefore, the operator can prepare a standard graph representing the frequency of existence corresponding to the concentration of each component of the impurities contained in the analytical gas.

Next, a port for supplying an analytical process gas for a semiconductor device manufacturing process is connected to a port to which a standard gas is supplied, and then a trace amount of the process gas used for the semiconductor device manufacturing process for an atmospheric pressure ionization mass spectrometer or the like. When supplied to the analyzer 20, each component contained in the process gas is ionized to calculate a frequency of existence.

Therefore, the operator can determine the use of the process gas used in the semiconductor device manufacturing process by obtaining the concentration of the process gas using the standard graph and the frequency of the analysis process gas.

However, after the high purity gas and the standard gas pass through the first flow regulator 14 and the second flow regulator 18, they are mixed inside a pipe having a narrow internal area, and the high purity gas supply source discharges the high purity gas in l units. In addition, the standard gas supply source has a problem in that the flow rate difference and the discharge pressure difference occurs as the standard gas is discharged in kPa, and thus vortices occur and high purity gas and the standard gas cannot be accurately mixed.

SUMMARY OF THE INVENTION An object of the present invention is to provide a mixed standard gas generator of a semiconductor analyzer capable of easily mixing a high purity gas and a standard gas to generate a mixed standard gas of an appropriate concentration.

1 is a schematic configuration diagram of a conventional semiconductor process gas analyzer.

2 is a block diagram showing an embodiment of a semiconductor process gas analysis device according to the present invention.

※ Explanation of symbols for main parts of drawing

10, 30: high purity gas supply source 12, 32: purifier

14, 34: first flow regulator 16: standard gas supply source

18, 44: second flow regulator 20: trace amount analyzer

36, 46: check valve 38, 48: diffuser

40: high purity gas supply line 42: standard gas supply source

50: standard gas supply line 52: buffer unit

54 exhaust line 56 regulator

58: mixed standard gas discharge line 60: trace amount analyzer

In the semiconductor process gas analyzing apparatus according to the present invention for achieving the above object, the high purity gas supply line is supplied with a high purity gas and the standard gas supply line is supplied with a standard gas is connected to each other, the semiconductor process is connected to the trace amount analyzer again In the gas analyzer, a buffer unit having a predetermined internal space is formed at a point where the high purity gas supply line and the standard gas supply line are connected.

It is preferable that a diffuser is installed on the high purity gas supply line.

And, a check valve is installed to prevent the high-purity gas passed through the front end of the diffuser on the basis of the flow of the high-purity gas, the first flow regulator for adjusting the amount of the high-purity gas passed through the front of the check valve Is installed, a purifier may be installed to remove impurities contained in the high purity gas passed in front of the first flow regulator.

In addition, the diffuser is preferably installed on the standard gas supply line.

In addition, a check valve is installed at the front of the diffuser to prevent the standard gas from flowing backward based on the flow of the standard gas, and a second flow controller is installed to adjust the amount of the standard gas passed at the front of the check valve. Can be.

In addition, an exhaust line is further provided with a regulator for controlling the amount of the mixed standard gas on one side of the buffer unit, the diameter of the exhaust line, 1.5 to 2.5 times compared to the high purity gas supply line and the standard gas supply line It can form large.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a block diagram showing an embodiment of a semiconductor process gas analysis device according to the present invention.

Referring to FIG. 2, a high purity gas supply source 30 is provided which selects high purity nitrogen gas, argon gas, helium gas, and the like and supplies the gas in L units.

The high purity gas supply source 30 is connected to the buffer unit 52 having a predetermined internal space by a high purity gas supply line 40 having a diameter of about 1/8 inch.

On the high purity gas supply line 40, a purifier 32 for removing impurities contained in the high purity gas that is passed based on the flow of the high purity gas, and a first flow controller 34 for adjusting the amount of the high purity gas that is passed. ), A check valve 36 for preventing the high purity gas passed through and a diffuser 38 for lowering the discharge pressure of the high purity gas passed therethrough and diffusing the high purity gas into the buffer 52. It is installed sequentially.

In addition, the standard gas supply line 42 for supplying nitrogen gas, argon gas, helium gas, etc., in ppm units in which one side of the buffer unit 52 and a predetermined amount of impurities are mixed, has a diameter of about 1/8 inch. It is connected by 50.

On the standard gas supply line 50, the second flow controller 44 for adjusting the amount of the standard gas passed on the basis of the flow of the standard gas, the check valve 46 to prevent the standard gas passed back And a diffuser 48 for lowering the discharge pressure of the standard gas and diffusing the standard gas into the buffer unit 52 are sequentially installed.

On the other side of the buffer unit 52, an exhaust line 54 is provided with a regulator 56 for adjusting the amount of the mixed standard gas formed in the buffer unit 52.

In addition, on the other side of the buffer unit 52, a trace analyzer 60 such as an atmospheric pressure ionization mass spectrometer, in which an ionizer, an analyzer, and a detector are installed, is connected by a mixed standard gas discharge line 58. .

Accordingly, the pure gas selected from nitrogen gas, argon gas, and helium gas is discharged from the high purity gas supply source 30 and supplied to the purifier 32 to remove the foreign matter that may be included in the pure gas.

The purified gas, which has undergone the purification process, passes through the first flow regulator 34, and after the amount of gas is adjusted, passes through the check valve 36 and is supplied to the diffuser 38 again. The high purity gas supplied to the diffuser 38 diffuses into the buffer portion 52 after the pressure drops.

At this time, the same standard gas as that supplied from the pure gas supply source 30 among the nitrogen gas, argon gas, and helium gas in a ppm unit in which a predetermined amount of impurities are added is discharged from the standard gas supply source 42 and the second flow regulator 44 Pass through the check valve 46 after the amount of gas is adjusted.

In addition, the standard gas passing through the check valve 46 passes through the diffuser 48 and the discharge pressure drops and is supplied into the buffer unit 52 so that the diffuser 38 installed on the high purity gas supply line 40. It is mixed with the high-purity gas passed through) to form an analysis standard gas, that is, a mixed standard gas in ppb. Since the buffer unit 52 constitutes a predetermined internal space, the high purity gas and the standard gas are easily mixed, and the mixed standard gas inside the buffer unit 52 of the regulator 56 installed on the exhaust line 54. The pressure is adjusted by adjustment.

In addition, the mixed standard gas formed inside the buffer unit 52 is supplied to a trace amount analyzer 60 such as an atmospheric pressure ionization mass spectrometer through a mixed standard gas discharge line 58, and then ionized as it is ionized. The number of impurity components in the pseudo gas, that is, the frequency of existence, is calculated.

Accordingly, the operator can prepare a standard graph showing the frequency of existence corresponding to the concentration of each component of the impurities contained in the analysis reference gas.

Next, after connecting a port for supplying an analytical process gas used in a semiconductor device manufacturing process to a port to which a standard gas is supplied, the process gas used for the semiconductor device manufacturing process is subjected to a trace amount analyzer such as an atmospheric pressure ionization mass spectrometer ( 60), each component contained in the process gas is ionized to produce a frequency of existence.

Therefore, the operator can determine the use of the process gas used in the semiconductor device manufacturing process by obtaining the concentration of the process gas using the standard graph and the frequency of the analysis process gas.

Therefore, according to the present invention, by configuring a buffer unit in which the high purity gas and the standard gas are mixed, the high purity gas and the standard gas can be easily mixed to form a mixed standard gas having an accurate concentration.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (10)

In the semiconductor process gas analysis device configured to be connected to the ultra-fine analyzer after the high purity gas supply line is supplied with high purity gas and the standard gas supply line is supplied with standard gas, And a buffer unit having a predetermined internal space formed at a point where the high purity gas supply line and the standard gas supply line are connected. The method of claim 1, The semiconductor process gas analysis device, characterized in that the diffuser is installed on the high purity gas supply line. The method of claim 2, And a check valve is installed to prevent the high-purity gas passing through the diffuser from flowing backward based on the flow of the high-purity gas. The method of claim 3, wherein And a first flow controller for adjusting the amount of the high purity gas that is passed through the front of the check valve based on the flow of the high purity gas. The method of claim 4, wherein And a purifier for removing impurities contained in the high purity gas passing through the first flow regulator on the basis of the flow of the high purity gas. The method of claim 5, The semiconductor process gas analyzer, characterized in that the diffuser is installed on the standard gas supply line. The method of claim 6, And a check valve installed at the front end of the diffuser based on the flow of the standard gas to prevent the standard gas from flowing backward. The method of claim 7, wherein And a second flow controller for adjusting an amount of the standard gas passed through the front of the check valve based on the flow of the standard gas. The method of claim 8, The exhaust gas processing apparatus, characterized in that the exhaust line is further provided with a regulator for controlling the amount of the mixed standard gas on one side of the buffer unit. The method of claim 9, The diameter of the exhaust line, the semiconductor process gas analysis device, characterized in that formed about 1.5 to 2.5 times larger than the high purity gas supply line and the standard gas supply line.