KR19980077081A - Current sensing device of accelerator turbopump in ion implantation facility - Google Patents
Current sensing device of accelerator turbopump in ion implantation facility Download PDFInfo
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- KR19980077081A KR19980077081A KR1019970014050A KR19970014050A KR19980077081A KR 19980077081 A KR19980077081 A KR 19980077081A KR 1019970014050 A KR1019970014050 A KR 1019970014050A KR 19970014050 A KR19970014050 A KR 19970014050A KR 19980077081 A KR19980077081 A KR 19980077081A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0473—Changing particle velocity accelerating
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Abstract
웨이퍼상에 원하는 이온을 효과적으로 주입시키기 위해 이온빔을 가속시키는 가속기의 내부를 고진공으로 형성하는 터보펌프의 작동상태를 실시간에 파악하고, 터보펌프 오류가 발생하면 인터로크를 수행하도록 개선시킨 이온주입설비의 가속기 터보펌프의 전류감지장치에 관한 것이다.In order to effectively inject the desired ions onto the wafer, the operation of the turbopump which forms the inside of the accelerator which accelerates the ion beam at high vacuum in real time and the interlocking is performed to perform the interlock when a turbopump error occurs. The present invention relates to a current sensing device of an accelerator turbopump.
이온주입공정 중 빔가속을 위한 부분의 진공제공을 위한 터보펌프에 전원을 공급하도록 전원공급부를 구비한 이온주입설비의 가속기 터보펌프의 전류감지장치에 있어서, 상기 전원공급부에서 상기 터보펌프에 공급되는 전류를 감지하여 상기 터보펌프의 작동 여부를 파악하기 위한 전류감지부 및A current sensing device of an accelerator turbopump of an ion implantation facility having a power supply unit for supplying power to a turbopump for providing a vacuum of a portion for beam acceleration during an ion implantation process, the power supply being supplied to the turbopump. Current sensing unit for sensing the current to determine whether the operation of the turbopump and
상기 전류감지부의 전류감지 상태에 따라서 상기 이온주입공정을 인터로크하는 제어수단을 구비하여 이루어 진다.And controlling means for interlocking the ion implantation process in accordance with the current sensing state of the current sensing unit.
따라서, 본 발명에 의하면 고진공 형성을 위한 터보펌프의 작동상태를 전류계를 통해 표시하여 작업자는 점검을 용이하게 수행할 수 있어서 작업상의 손실을 줄이고, 인터로크 기능을 제공하여 공정사고를 막아 효과적인 이온주입공정을 수행하는 효과가 있다.Therefore, according to the present invention, the operating state of the turbopump for forming a high vacuum can be displayed through an ammeter so that the operator can easily perform the inspection, thereby reducing work loss and providing an interlock function to prevent process accidents, thereby effectively injecting ions. It is effective to carry out the process.
Description
본 발명은 이온주입설비의 가속기 터보펌프의 전류감지장치에 관한 것으로서, 보다 상세하게는 웨이퍼상에 원하는 이온을 효과적으로 주입시키기 위해 이온빔을 가속시키는 가속기의 내부를 고진공으로 형성하는 터보펌프의 작동상태를 실시간에 파악하고, 터보펌프 오류가 발생하면 공정을 중지하는 인터로크를 제공하도록 개선시킨 이온주입설비의 가속기 터보펌프의 전류감지장치에 관한 것이다.The present invention relates to a current sensing device for an accelerator turbopump of an ion implantation facility, and more particularly, to an operation state of a turbopump which forms a high vacuum inside an accelerator for accelerating an ion beam to effectively inject desired ions onto a wafer. The present invention relates to a current sensing device of an accelerator turbopump of an ion implantation facility that is identified in real time and improved to provide an interlock to stop a process when a turbopump error occurs.
반도체 제조공정에서 이온주입이란 부도체인 웨이퍼에 전기적 특성을 가진 원자이온을 웨이퍼의 표면을 뚫고 들어갈 만큼 큰 에너지를 갖게 하여 웨이퍼 속으로 넣어주는 것을 말한다. 이온주입설비는 진공부, 이온공급부, 분류자석, 가속기, 집중기, 중성빔포획장치, 주사기 및 이온주입실로 구성되어 있다.In the semiconductor manufacturing process, ion implantation refers to the introduction of atomic ions having electrical properties into the wafer, which is a nonconductor, with enough energy to penetrate the surface of the wafer. The ion implantation system consists of a vacuum unit, an ion supply unit, a sorting magnet, an accelerator, a concentrator, a neutral beam trapping device, a syringe, and an ion implantation chamber.
진공부를 형성하기 위해 사용되는 터보펌프는 기체 분자들의 운동량과 방향을 제시하여 고속 회전 표면을 이용하여 배기하고, 부드럽게 작동하며 시스템 작동에 있어 거의 진동이 없고, 5E-10torr 보다 더 적은 압력에 도달할 수 있는 순수 기계적 진공 펌프이다. 1 torr 부터 5E-10torr 이하 까지 동작할 수 있기 때문에 매우 다양하게 응용된다.The turbopump used to form the vacuum provides the momentum and direction of the gas molecules to evacuate using a high-speed rotating surface, operate smoothly, with little vibration in system operation, and reach pressures less than 5E-10torr. It is a pure mechanical vacuum pump that can. Because it can operate from 1 torr to 5E-10torr or less, it is very versatile.
도1에서 보는 바와 같이, 종래의 터보펌프(12)는 전원공급부(10)로부터 삼상교류 전원을 공급받아 작동되고, 터보펌프(12)는 이온주입챔버의 가속기 내부에 고진공을 형성시켜 불순물이 포함되지 않은 원하는 이온빔 가속 환경을 제공한다.As shown in FIG. 1, the conventional turbo pump 12 is operated by receiving three-phase AC power from the power supply unit 10, and the turbo pump 12 forms high vacuum inside the accelerator of the ion injection chamber to contain impurities. To provide the desired ion beam acceleration environment.
그런데 터보펌프(12)가 작동되지 않아 고진공이 형성되지 않으면 이온주입설비의 가속기는 정상적인 이온빔 가속동작을 수행할 수 없으며, 이는 심각한 공정불량을 초래한다.However, if the turbo pump 12 is not operated and high vacuum is not formed, the accelerator of the ion implantation equipment cannot perform normal ion beam acceleration operation, which causes a serious process failure.
그러나, 종래에는 가속기 터보펌프(12)의 작동상태를 알 수 있는 장치가 따로 구비되어 있지 않아 작업자가 직접 점검해야 하는 불편함이 있었고, 종종 터보펌프가 작동되지 않아서 가속기 내부에 고진공이 형성되지 않음으로써 수율이 저하되는 문제점이 있었다.However, in the related art, there is a inconvenience in that an operator needs to directly inspect the device, which is not provided with a device for knowing the operation state of the accelerator turbopump 12, and often a high vacuum is not formed inside the accelerator because the turbopump is not operated. As a result, there was a problem that the yield is lowered.
본 발명의 목적은, 이온주입시 고진공을 형성하는 터보펌프의 전원에 전류감지소자를 설치하여 작동상태를 실시간에 파악할 수 있도록 전류의 크기를 표시하고, 터보펌프 이상 발생시 인터로크 기능을 제공하여 공정을 중지시키는 이온주입설비의 가속기 터보펌프의 전류감지장치를 제공하는 데 있다.An object of the present invention, by installing a current sensing element in the power supply of the turbopump to form a high vacuum at the time of ion implantation to display the magnitude of the current to grasp the operating state in real time, and provides an interlock function when the turbopump abnormality occurs The present invention provides a current sensing device for an accelerator turbopump of an ion implantation facility.
도1은 종래의 터보펌프에 전원이 공급되는 구조를 나타내는 블럭도이다.1 is a block diagram showing a structure in which power is supplied to a conventional turbopump.
도2는 본 발명에 따른 이온주입설비의 가속기 터보펌프의 전류감지장치의 일 실시예를 나타내는 블럭도이다.Figure 2 is a block diagram showing an embodiment of the current sensing device of the accelerator turbopump of the ion implantation equipment according to the present invention.
* 도면의 주요 부분에 대한 부호의 설명** Explanation of symbols for the main parts of the drawings *
10, 20 : 전원공급부 12, 22 : 터보펌프10, 20: power supply 12, 22: turbo pump
24 : 전류감지부 26 : 전류표시부24: current detection unit 26: current display unit
28 : 스크린 30 : 제어부28: screen 30: control unit
상기 목적을 달성하기 위한 본 발명에 따른 이온주입설비의 가속기 터보펌프의 전류감지장치는, 이온주입 공정 중 빔가속을 위한 부분의 진공제공을 위한 터보펌프에 전원을 공급하도록 전원공급부를 구비한 이온주입설비의 가속기 터보펌프의 전류감지장치에 있어서, 상기 전원공급부에서 상기 터보펌프에 공급되는 전류를 감지하여 상기 터보펌프의 작동을 파악하기 위한 전류감지부 및 상기 전류감지부의 전류감지상태에 따라서 상기 이온주입 공정을 인터로크하는 제어수단을 구비하여 이루어 진다.The current sensing device of the accelerator turbopump of the ion implantation equipment according to the present invention for achieving the above object, Ion having a power supply to supply power to the turbopump for providing a vacuum of the portion for beam acceleration during the ion implantation process A current sensing device of an accelerator turbopump in an injection facility, wherein the power supply unit senses a current supplied to the turbopump to determine an operation of the turbopump according to a current sensing state and a current sensing state of the current sensing unit. And control means for interlocking the ion implantation process.
상기 전류감지부에 전류의 크기를 화면을 통해 디스플레이하는 스크린이 더 연결되어 구비됨이 바람직하다.It is preferable that the screen for displaying the current through the screen to the current sensing unit is further connected.
그리고, 상기 전류감지부에서 감지한 전류를 시각적으로 나타내는 전류표시수단이 더 구비될 수 있다.In addition, a current display means for visually displaying the current sensed by the current detection unit may be further provided.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도2는 본 발명에 따른 이온주입설비의 가속기 터보펌프의 전류감지장치의 일 실시예를 나타내는 블럭도이다.Figure 2 is a block diagram showing an embodiment of the current sensing device of the accelerator turbopump of the ion implantation equipment according to the present invention.
본 발명에 따른 실시예는 전원공급부(20), 터보펌프(22), 전류감지부(24), 전류표시부(26), 스크린(28) 및 제어부(30)로 구성된다.Embodiment according to the present invention is composed of a power supply unit 20, turbo pump 22, current sensing unit 24, current display unit 26, screen 28 and the control unit 30.
전원공급부(20)는 터보펌프(22)에 삼상의 교류전원을 공급하고, 상기 삼상전원 공급선의 일선에 전류감지부(24)를 설치한다. 전류감지부(24)에는 전류의 크기를 표시하는 전류표시부(26)가 연결되어 구성된다.The power supply unit 20 supplies three-phase alternating current power to the turbo pump 22, and installs a current sensing unit 24 on one line of the three-phase power supply line. The current detecting unit 24 is connected to the current display unit 26 for displaying the magnitude of the current.
또한 전류감지부(24)에 전류공급의 이상유무를 화면으로 디스플레이 하는 스크린(28)과 전류공급 이상 발생시 제어신호를 출력하는 제어부(30)가 더 연결되어 구성되어 있다.In addition, the current detection unit 24 is configured to further connect the screen 28 for displaying the presence or absence of the current supply to the screen and the control unit 30 for outputting a control signal when the current supply abnormality occurs.
구체적으로, 이온주입시 고진공을 형성하는 터보펌프(22)는 전원공급부(20)로부터 삼상의 교류전원을 공급받아 작동되고 이온주입챔버의 가속기 내부를 이온주입에 적정한 1E-3 내지 1E-8의 고진공을 형성한다.Specifically, the turbo pump 22, which forms a high vacuum at the time of ion implantation, is operated by receiving three-phase AC power from the power supply unit 20, and the 1E-3 to 1E-8 suitable for ion implantation inside the accelerator of the ion implantation chamber. To form a high vacuum;
전류감지부(24)는 삼상전원 공급선의 일선에 전류유도소자(도시하지 않음)를 이용해 공급전류 중 일상에 해당되는 전류를 감지하며, 전류감지부(24)에 연결되어 있는 전류계(도시하지 않음)를 구비한 전류표시부(26)는 전류의 크기를 표시한다.The current sensing unit 24 senses a current corresponding to daily life among supply currents by using a current induction element (not shown) on one line of the three-phase power supply line, and an ammeter (not shown) connected to the current sensing unit 24. The current display unit 26 with) displays the magnitude of the current.
전원공급부(20)에서 전원이 공급되지 않거나 터보펌프(22)가 작동되지 않으면 전류감지부(24)에 전류가 감지되지 않고, 또한 전류표시부(26)에 전류가 표시되지 않는다.If power is not supplied from the power supply unit 20 or the turbo pump 22 is not operated, no current is detected in the current sensing unit 24, and no current is displayed in the current display unit 26.
그리고 스크린(28)은 전류감지부(24)에 연결되어 감지된 전류의 크기를 화면상에 디스플레이함으로써 터보펌프(22)의 이상유무를 파악할 수 있으며 전류의 크기를 부호화하여 디스플레이하는 모니터(도시하지 않음)로 이루어진다.In addition, the screen 28 is connected to the current detecting unit 24 to display the magnitude of the detected current on the screen to determine whether there is an abnormality of the turbo pump 22, and monitors to display by encoding the magnitude of the current (not shown) Is not made).
또한 전류감지부(24)에 전류의 크기에 따라 전류공급부(20) 및 터보펌프(22)의 이상유무를 판단함으로써 이온주입공정을 중지하는 인터로크 기능을 수행하는 제어부(30)가 연결되어 있다.In addition, the controller 30 which performs the interlock function to stop the ion implantation process is connected to the current sensing unit 24 by determining whether the current supply unit 20 and the turbo pump 22 are abnormal according to the magnitude of the current. .
전술한 바와 같이 터보펌프의 전류를 전류계를 통해 실시간에 확인하고, 스크린에 디스플레이하여 수시로 전류공급 여부를 파악할 수 있으며, 전류공급에 이상이 발생하면 공정을 제어하여 공정사고를 막을 수 있고, 그에 따라 수율이 향상될 수 있다.As described above, the current of the turbo pump can be checked in real time through an ammeter and displayed on the screen to check whether the current is supplied at any time. If an abnormality occurs in the current supply, the process can be prevented by controlling the process. Yield can be improved.
따라서, 본 발명에 의하면 고진공 형성을 위한 터보펌프의 작동상태를 전류계를 통해 표시하여 작업자는 점검을 용이하게 수행할 수 있어서 작업상의 손실을 줄이고, 인터로크 기능을 제공하여 공정사고를 막아 효과적인 이온주입공정을 수행하는 효과가 있다.Therefore, according to the present invention, the operating state of the turbopump for forming a high vacuum can be displayed through an ammeter so that the operator can easily perform the inspection, thereby reducing work loss and providing an interlock function to prevent process accidents, thereby effectively injecting ions. It is effective to carry out the process.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
Claims (5)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970014050A KR19980077081A (en) | 1997-04-16 | 1997-04-16 | Current sensing device of accelerator turbopump in ion implantation facility |
TW087116951A TW432501B (en) | 1997-04-16 | 1998-10-13 | Method of monitoring turbo pump operation in ion implantation apparatus for use in manufacturing semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019970014050A KR19980077081A (en) | 1997-04-16 | 1997-04-16 | Current sensing device of accelerator turbopump in ion implantation facility |
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KR19980077081A true KR19980077081A (en) | 1998-11-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019970014050A KR19980077081A (en) | 1997-04-16 | 1997-04-16 | Current sensing device of accelerator turbopump in ion implantation facility |
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KR (1) | KR19980077081A (en) |
TW (1) | TW432501B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100416811B1 (en) * | 2001-04-27 | 2004-01-31 | 삼성전자주식회사 | High energy ion implanter for semiconductor device manufacture |
US6717165B2 (en) * | 2000-10-27 | 2004-04-06 | Samsung Electronics Co., Ltd. | Device and method for detecting the drive state of a turbo pump in a tandetron accelerator of an ion implantation device |
KR100533568B1 (en) * | 2004-07-15 | 2005-12-06 | 삼성전자주식회사 | High energy ion implanter having monitoring function about charge exchanging gas |
KR101121597B1 (en) * | 2010-02-25 | 2012-03-20 | 주식회사 라온테크 | System for breaking reverse-current |
KR101454765B1 (en) * | 2013-07-03 | 2014-10-27 | 인천대학교 산학협력단 | Management system of power supplying device for vacuum pump |
-
1997
- 1997-04-16 KR KR1019970014050A patent/KR19980077081A/en not_active Application Discontinuation
-
1998
- 1998-10-13 TW TW087116951A patent/TW432501B/en not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6717165B2 (en) * | 2000-10-27 | 2004-04-06 | Samsung Electronics Co., Ltd. | Device and method for detecting the drive state of a turbo pump in a tandetron accelerator of an ion implantation device |
KR100416811B1 (en) * | 2001-04-27 | 2004-01-31 | 삼성전자주식회사 | High energy ion implanter for semiconductor device manufacture |
KR100533568B1 (en) * | 2004-07-15 | 2005-12-06 | 삼성전자주식회사 | High energy ion implanter having monitoring function about charge exchanging gas |
KR101121597B1 (en) * | 2010-02-25 | 2012-03-20 | 주식회사 라온테크 | System for breaking reverse-current |
KR101454765B1 (en) * | 2013-07-03 | 2014-10-27 | 인천대학교 산학협력단 | Management system of power supplying device for vacuum pump |
Also Published As
Publication number | Publication date |
---|---|
TW432501B (en) | 2001-05-01 |
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