KR19980073657A - Paste for Magnesium Oxide (MgO) Thin Film Layer Formation for PDP and Method of Manufacturing Magnesium Oxide (MgO) Thin Film Layer Using the Same - Google Patents
Paste for Magnesium Oxide (MgO) Thin Film Layer Formation for PDP and Method of Manufacturing Magnesium Oxide (MgO) Thin Film Layer Using the Same Download PDFInfo
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- KR19980073657A KR19980073657A KR1019970009078A KR19970009078A KR19980073657A KR 19980073657 A KR19980073657 A KR 19980073657A KR 1019970009078 A KR1019970009078 A KR 1019970009078A KR 19970009078 A KR19970009078 A KR 19970009078A KR 19980073657 A KR19980073657 A KR 19980073657A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/40—Layers for protecting or enhancing the electron emission, e.g. MgO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
- H01J11/12—AC-PDPs with at least one main electrode being out of contact with the plasma with main electrodes provided on both sides of the discharge space
Abstract
본 발명은 PDP(Plasma Display)용 기판의 상면에 MgO 박막층을 형성하기 위한 페이스트(Paste) 조성을 조정함과 함께 간단한 코팅 방법을 적용함으로써 공정의 단순화 및 설비의 간단화로 저렴한 생산원가를 얻고, 코팅시 기판을 보호하는데 적합한 페이스트 및 그를 이용한 MgO 박막층의 제조 방법에 관한 것이다.The present invention obtains a low production cost by simplifying the process and simplifying equipment by applying a simple coating method while adjusting the paste composition for forming the MgO thin film layer on the upper surface of the PDP (Plasma Display) substrate. The present invention relates to a paste suitable for protecting a substrate and a method for producing an MgO thin film layer using the paste.
본 발명의 구성은 MgO 입자, Mg을 포함한 Salt, 유기바인더로 조성된 페이스트로 이루어지며, 또한 이러한 페이스트를 기판상에 공지 코팅방법으로 코팅후 소성처리하여 MgO 박막층을 얻는 제조 방법에 관한 것이다.The composition of the present invention is made of a paste composed of MgO particles, salt containing Mg, an organic binder, and also relates to a manufacturing method of obtaining a MgO thin film layer by coating and baking the paste on a substrate by a known coating method.
Description
본 발명은 디스플레이(Display) 장치의 PDP(Plasma display)용 기판의 상면에 MgO 박막층을 형성시키는 것에 관한 것으로, 특히 MgO 박막층 형성을 위한 페이스트(Paste) 조성을 조정함과 함께 일반적인 코팅법을 적용함으로써, 공정의 단순화와 설비의 간단화로 저렴한 제조 원가 및 코팅시의 기판을 보호하는데 적합한 MgO 페이스트 및 그를 이용한 MgO 박막층의 제조 방법에 관한 것이다.The present invention relates to the formation of an MgO thin film layer on the upper surface of a PDP (Plasma display) substrate of a display device, in particular by adjusting the paste composition for forming the MgO thin film layer and by applying a general coating method, The present invention relates to an MgO paste suitable for protecting a substrate during coating and an inexpensive manufacturing cost due to a simplification of a process and a simplified equipment, and a method of manufacturing an MgO thin film layer using the same.
도 1은 일반적인 PDP의 단면구조를 나타낸 것으로, 전면 유리기판(1)의 동일면상에 한쌍의 상부전극(4)을 형성하고, 상기 상부전극(4)위에 유전층(2)을 인쇄기법으로 형성하며, 상기 유전층(2)위에 보호층(3)을 증착방식으로 형성한 상부구조와, 배면 유리기판(11)위에 하부전극(12)을 형성하고, 상기 하부전극(12)간에 인접한 셀(Cell)과의 누화(Crosstalk) 현상을 방지하기 위해 격벽(6)을 형성하며, 상기 격벽(6)과 하부전극(12)주위에 형광체(8, 9, 10)를 형성한 하부 구조로 구성되어 상기 상부구조와 하부구조의 사이 공간에 불활성 가스를 봉입하여 방전영역(5)을 가지도록 구성된다.1 illustrates a cross-sectional structure of a general PDP, in which a pair of upper electrodes 4 are formed on the same surface of the front glass substrate 1, and a dielectric layer 2 is formed on the upper electrodes 4 by a printing method. In addition, an upper structure in which the protective layer 3 is formed on the dielectric layer 2 by a deposition method, and a lower electrode 12 are formed on the rear glass substrate 11, and a cell adjacent between the lower electrodes 12 is formed. The barrier rib 6 is formed to prevent crosstalk between the barrier rib 6 and the lower structure including phosphors 8, 9, and 10 formed around the barrier rib 6 and the lower electrode 12. The inert gas is enclosed in the space between the structure and the substructure to have the discharge region 5.
이와 같은 구조에서 한쌍의 상부전극(4) 상호간에 구동전압을 인가하게 되면 유전층(2)과 보호층(3)표면의 방전영역(5)에서 면방전이 일어나서 자외선(7)이 발생한다.In such a structure, when a driving voltage is applied between the pair of upper electrodes 4, surface discharge occurs in the discharge region 5 on the surface of the dielectric layer 2 and the protective layer 3 to generate ultraviolet rays 7.
상기 발생한 자외선(7)에 의해 형광체(8, 9, 10)를 여기시키고, 상기 발광된 형광체(8, 9, 10)에 의해 칼라(Color) 표시가 이루어진다.Phosphors 8, 9 and 10 are excited by the generated ultraviolet rays 7, and color display is performed by the emitted phosphors 8, 9 and 10.
즉, 방전셀(Cell) 내부에 존재하는 전자들이 인가된 구동전압에 의해 음극(-)으로 가속하면서, 상기 방전셀안에 400∼500 torr 정도의 압력으로 채워진 불활성 혼합가스 즉, 헬륨(He)을 주성분으로 하여 크세논(Xe), 네온(Ne) 가스 등을 첨가한 페닝(Penning) 혼합가스와 충돌하여 상기 불활성 가스가 여기되면서 147㎚의 자외선(7)이 발생한다.That is, while the electrons inside the discharge cell accelerate to the cathode (-) by the driving voltage applied thereto, the inert mixed gas filled with the pressure of about 400 to 500 torr in the discharge cell, that is, helium (He) A 147 nm ultraviolet ray 7 is generated as the inert gas is excited as a main component collides with a Penning mixed gas containing xenon (Xe), neon (Ne) gas, and the like.
상기 자외선(7)이 하부전극(12)과 격벽(6) 주위를 둘러싸고 있는 형광체(8, 9, 10)와 충돌하여 가시광선영역에 발광이 된다.The ultraviolet light 7 collides with the phosphors 8, 9, and 10 surrounding the lower electrode 12 and the partition wall 6 to emit light in the visible light region.
상기한 보호층(3)을 제작하는 종래의 방법에 있어서 재료 제작의 선례는 SLD 94 DlGEST(P 323-326, 저자 Amano)등에서 찾을 수 있다.The precedent of material production in the conventional method of manufacturing the above-mentioned protective layer 3 can be found in SLD 94 DlGEST (P 323-326, Amano).
이 논문은 솔벤트속에 MgO Powder를 혼합하여 제조한 MgO Paste를 Screen Printing하여 두께 2㎛인 MgO 보호층을 형성하고 500℃ 가열하는 방법이 제공되고 있다.This paper provides a method of screen printing MgO Paste prepared by mixing MgO Powder in solvent to form MgO protective layer with 2㎛ thickness and heating it at 500 ℃.
이와 같은 Screen Printing은 재료의 저가격 및 대체 신기술로서 상당한 매력을 갖는 방법이다.Such screen printing is a method that has considerable appeal as a low cost and alternative new technology of materials.
그러나, 이 방법은 PDP의 발광 Cell로부터 빛을 통과시키는데 부적절한 후막 제작법이 될 수도 있다.However, this method may be an inadequate thick film fabrication method for passing light from the light emitting cells of the PDP.
따라서 AC PDP의 기판인 상판 Glass상에 MgO 후막 필름을 도포하는 것이 용이하지 않다.Therefore, it is not easy to apply the MgO thick film on the upper glass that is the substrate of the AC PDP.
한편, 다른예로써는 EU Patent No, 934002015호에서는 수백 Nano Meter의 두께를 갖는 MgO 보호층을 진공(Vacuum)방식으로 피복시키고 있다.Meanwhile, as another example, EU Patent No. 934002015 coats a MgO protective layer having a thickness of several hundred nanometers by a vacuum method.
이와 같은 진공 방식은 E-Beam과 Radio Frequency(RF) Sputtering 방법으로써 제작비용이 높으며 생산성도 좋지 않음과 함께 Firing Voltage를 낮추어야 하고, 또한 Sputtering시 Device 장수명을 위해 이온 충돌을 억제시키는 기능 등을 만족시켜야 한다.This vacuum method is E-Beam and Radio Frequency (RF) Sputtering method, which requires high production cost and poor productivity, and lower firing voltage. Also, it must satisfy the function of suppressing ion collision for long life of device during sputtering. do.
본 발명은 상기한 종래의 문제점을 해결하기 위해 안출한 것으로, MgO 박막층 형성을 위한 페이스트(Paste) 성분을 조정하고, 일반적인 간단한 코팅방법(Spray법, Dipping법, Spin Coating법등)으로 코팅하므로써, 설비 및 공정의 간단화로 저렴한 제조 원가를 얻기 위한 것에 적합한 MgO 박막 형성용 페이스트 및 그를 이용한 MgO 박막층 제조 방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the above-mentioned conventional problems, by adjusting the paste component for forming the MgO thin film layer, and coating by a common simple coating method (Spray method, Dipping method, Spin Coating method, etc.) And an MgO thin film forming paste suitable for obtaining an inexpensive manufacturing cost due to the simplification of the process, and a method of manufacturing the MgO thin film layer using the same.
도 1은 일반적인 PDP 단면도1 is a cross-sectional view of a typical PDP
도 2는 본 발명에 따른 열처리 온도 조건을 나타낸 그래프Figure 2 is a graph showing the heat treatment temperature conditions according to the present invention
도 3은 전기적 특성을 나타낸 그래프3 is a graph showing electrical characteristics
이와 같은 목적을 달성하기 위한 본 발명은 MgO 입자, Mg를 포함한 Salt(염류), 유기바인더로 조성된 MgO 박막층 형성용 Micro Paste로 이루어진다.The present invention for achieving the above object consists of MgO particles, MgO salt containing salt (Mg), MgO thin film layer formed by the organic binder.
상기 Micro Paste 100중량% 중에서 MgO 입자는 크기가 0.1∼0.5㎛ 범위이고, 첨가량은 0.01∼0.2 중량% 이며, 양호하게는 0.03∼0.15 중량% 이고, 가장 바람직하게는 0.04∼0.1 중량% 이고, 입자크기는 0.2∼0.4㎛ 범위이다.The MgO particles in the 100% by weight of the Micro Paste has a size in the range of 0.1 to 0.5 µm, the addition amount is 0.01 to 0.2% by weight, preferably 0.03 to 0.15% by weight, most preferably 0.04 to 0.1% by weight, and the particles The size ranges from 0.2 to 0.4 μm.
Mg를 함유한 Salt는 Mg(NO3), MgCl2, Mg(CH3COO)2로 이루어지며, 그 첨가량은 0.35∼7.0 중량%로써, 양호하게는 1.5∼5.0 중량% 이고, 가장바람직하게는 2.0∼4.0 중량%이다.Salt containing Mg is composed of Mg (NO 3 ), MgCl 2 , Mg (CH 3 COO) 2 , the addition amount is 0.35 to 7.0% by weight, preferably 1.5 to 5.0% by weight, most preferably 2.0 to 4.0 weight%.
그 밖의 성분은 유기바인더로써 에타놀(Ethanol), 아세톤 또는 메틸-에틸케톤(Methyl-Ethylketone)을 들 수 있다.Other components include organic binders such as ethanol, acetone or methyl-ethylketone.
본 발명의 MgO Micropaste는 적절한 기술에 따라서 유전체 표면위에 도포해서 사용한다.The MgO Micropaste of the present invention is applied to and used on the dielectric surface according to appropriate techniques.
이러한 기술의 예로서 유전체와 스퀴지 사이의 필요한 Gap을 고정시켜 발라준다.An example of this technique is to fix the required gap between the dielectric and the squeegee.
스퀴지는 균질한 표면을 가져야 하고 그 형태는 Tube Type, Core Type, 막대 Type을 요구한다(재질은 유리 또는 금속을 재료로 만들지만 금속은 Micropaste와 반응하지 않는 재료 즉 티타늄을 사용한다).The squeegee must have a homogeneous surface and its type requires Tube Type, Core Type and Rod Type (the material is made of glass or metal but the metal does not react with Micropaste, i.e. titanium).
다른 제작 기술로는 Spray법, Dipping법, Spin Coating법에 의해서도 제작 가능하다.Other manufacturing techniques are also possible by the spray method, dipping method, and spin coating method.
원하는 유전체를 Pattern의 Film Mask로 막아놓고 도포하여 박막제작을 해 줄 수 있다.You can make thin film by blocking the desired dielectric with Pattern Film Mask and applying it.
도포한후에 5분 동안에 걸쳐 유기 Solvent를 증발 시키고 나면 그 결과로서 Salt가 남는데 그 Salt안에는 처음부터 있었던 MgO 입자가 있다.After application, the organic solvent was evaporated for 5 minutes, and as a result, salt remained, in which the MgO particles were originally present.
그 다음 공기중에서 상기 코팅된 기판을 400℃ 이상, 좋게는 420℃ 이상이고, 가장 바람직하게는 450℃ 이상에서 소성한다.The coated substrate is then calcined in air at 400 ° C. or higher, preferably 420 ° C. or higher, most preferably at 450 ° C. or higher.
소성할때는 최고 온도에서 5∼20분까지, 좋게는 10∼15분간 소성한다.When calcining, it is calcined at a maximum temperature for 5 to 20 minutes, preferably 10 to 15 minutes.
승온시간은 40∼120분까지 하지만 바람직하게는 60∼90분간 상기온도가 될 때까지 서서히 승온시킨다.The temperature raising time is up to 40 to 120 minutes, but is preferably gradually raised until it reaches the above temperature for 60 to 90 minutes.
이와 같은 소성처리후 냉각시간(Cooling Time)은 40∼120분, 바람직하게는 60∼120분간 서서히 냉각시킨다.After such a firing treatment, the cooling time is gradually cooled to 40 to 120 minutes, preferably 60 to 120 minutes.
이와 같이 처리하여서된 본 발명은 원하지않던 물질을 증발시키고 이것은 Salt로부터 날아가게 된다.The present invention, thus treated, evaporates the unwanted material, which is taken away from the salt.
그 때문에 소성에 따른 Salt로부터 새롭게 생긴 MgO는 이미 함께 혼합시켜 존재하고 있는 MgO 입자 주위에 붙어서 점점 성장(Growth)되어간다.As a result, the newly formed MgO from the salt resulting from the firing is grown around the MgO particles already present by mixing together.
이때의 MgO 소립자는 핵의 역할을 해준다.At this time, MgO small particles play a role of the nucleus.
다음은 실시예에 따라 설명한다.The following is described according to the embodiment.
실시예 1Example 1
표 1과 같은 조성으로된 Micro Paste 100g을 일반적인 도포방법으로 기판상에 도포한후 Belt Furnace속에 넣고 도 2와 같은 방법으로 열처리하였다.Micro Paste 100g having the composition shown in Table 1 was coated on a substrate by a general coating method, and then placed in a belt furnace and heat-treated in the same manner as in FIG. 2.
[표 1]TABLE 1
실시예 2Example 2
표 2와 같은 조성으로된 Micro Paste 100g을 이용하여 실시예 1과 동일하게 처리하였다.The micropaste 100g having the composition shown in Table 2 was used in the same manner as in Example 1.
[표 2]TABLE 2
상기한 실시예 1 및 2를 통해 MgO 후막층을 얻을 수 있다.The MgO thick film layer may be obtained through Examples 1 and 2 described above.
상기 MgO 후막층을 이용하여 도 1과 같은 AC PDP Cell을 제작하여 Firing Voltate를 측정해본 결과 도 3과 같이 나타났다.As a result of measuring the firing voltate using the MgO thick film layer to produce an AC PDP cell as shown in FIG.
도 3에서와 같이 전기적 특성이 E-Beam 방법보다도 더 크다.As shown in Fig. 3, the electrical characteristics are larger than the E-Beam method.
그러나 그 차이는 적고 AC PDP에서 두가지 방법모두 적용가능하다.However, the difference is small and both methods are applicable in AC PDP.
이상에서와 같이 본 발명은 MgO 입자와 Mg를 함유한 Salt, 유기바인더를 적절히 배합함과 함께 코팅방법에 구애없이 PDP용 기판의 상면에 MgO 박막층을 간단한 설비 및 공정화로 코팅할 수 있어 PDP 생산 코스트(Cost)를 대폭 줄일 수 있고, Firing Voltage를 대폭 줄일수 있는 PDP MgO 박막 형성이 가능하다.As described above, according to the present invention, the MgO thin film layer can be coated on the upper surface of the substrate for PDP by simple equipment and process, and the PDP production cost can be suitably blended with MgO particles, Mg-containing salt and organic binder. It is possible to form PDP MgO thin film which can greatly reduce cost and greatly reduce firing voltage.
Claims (8)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970009078A KR100232134B1 (en) | 1997-03-18 | 1997-03-18 | A paste for forming magnesium oxide layer in pdp and manufacturing method of magnesium oxide layer using the paste |
| US08/950,975 US6013309A (en) | 1997-02-13 | 1997-10-15 | Protection layer of plasma display panel and method of forming the same |
| JP10026242A JP2918524B2 (en) | 1997-02-13 | 1998-02-06 | Plasma display panel protective layer and method of forming the same |
| US09/442,747 US6379783B1 (en) | 1997-02-13 | 1999-11-18 | Protection layer of plasma display panel and method of forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970009078A KR100232134B1 (en) | 1997-03-18 | 1997-03-18 | A paste for forming magnesium oxide layer in pdp and manufacturing method of magnesium oxide layer using the paste |
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| Publication Number | Publication Date |
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| KR19980073657A true KR19980073657A (en) | 1998-11-05 |
| KR100232134B1 KR100232134B1 (en) | 1999-12-01 |
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|---|---|
| KR (1) | KR100232134B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100705289B1 (en) * | 2004-12-16 | 2007-04-10 | 엘지전자 주식회사 | Protect layer manufacture method of plasma display panel and composition thereof |
| KR100759444B1 (en) * | 2005-11-30 | 2007-09-20 | 삼성에스디아이 주식회사 | Plasma display panel |
-
1997
- 1997-03-18 KR KR1019970009078A patent/KR100232134B1/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100705289B1 (en) * | 2004-12-16 | 2007-04-10 | 엘지전자 주식회사 | Protect layer manufacture method of plasma display panel and composition thereof |
| KR100759444B1 (en) * | 2005-11-30 | 2007-09-20 | 삼성에스디아이 주식회사 | Plasma display panel |
| US7649315B2 (en) | 2005-11-30 | 2010-01-19 | Samsung Sdi Co., Ltd. | Plasma display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100232134B1 (en) | 1999-12-01 |
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