KR19980048804A - Preheating device of gas supply pipe for semiconductor manufacturing device - Google Patents
Preheating device of gas supply pipe for semiconductor manufacturing device Download PDFInfo
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- KR19980048804A KR19980048804A KR1019960067452A KR19960067452A KR19980048804A KR 19980048804 A KR19980048804 A KR 19980048804A KR 1019960067452 A KR1019960067452 A KR 1019960067452A KR 19960067452 A KR19960067452 A KR 19960067452A KR 19980048804 A KR19980048804 A KR 19980048804A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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Abstract
본 발명은 화학기상증착장치 등과 같은 공정챔버에 반응가스를 공급하기 위한 가스공급관을 통과하는 반응가스를 예열시킬 수 있는 예열장치에 관한 것이다.The present invention relates to a preheater capable of preheating a reaction gas passing through a gas supply pipe for supplying a reaction gas to a process chamber such as a chemical vapor deposition apparatus.
본 발명에 따른 반도체 제조장치용 가스공급관의 예열장치는, 반응가스가 흐르는 가스공급관(2)의 외주면에 가열관(4)을 취부시키고, 내주면에 냉각관(6)이 취부된 외관(5)으로 상기 가열관(4)이 취부된 가스공급관(2)을 감싸서 이루어진다.In the preheating apparatus of the gas supply pipe for semiconductor manufacturing apparatus according to the present invention, the heating tube 4 is attached to the outer circumferential surface of the gas supply pipe 2 through which the reaction gas flows, and the outer tube 5 is provided with the cooling tube 6 mounted on the inner circumferential surface. It is made by wrapping the gas supply pipe (2) in which the heating tube (4) is mounted.
따라서, 공정챔버(1)에 공급되는 반응가스가 공정챔버(1)내로 유입되기 전에 미리 예열토록 함으로써 공정챔버(1) 내에서 최적의 반응조건을 형성할 수 있도록 하여 반도체 장치의 품질 및 수율을 향상시키는 효과가 있으며, 또한 반응가스의 예열에 의하여 파티클의 발생을 최소화하여 공정챔버(1)를 포함하는 가스공급관(2)들의 유지, 보수를 간편하게 하는 효과가 있다.Therefore, the reaction gas supplied to the process chamber 1 is preheated before it is introduced into the process chamber 1 so that an optimum reaction condition can be formed in the process chamber 1, thereby improving the quality and yield of the semiconductor device. There is an effect of improving, and also by minimizing the generation of particles by the preheating of the reaction gas has the effect of simplifying the maintenance, repair of the gas supply pipe (2) including the process chamber (1).
Description
본 발명은 반도체 제조장치용 가스공급관의 예열장치에 관한 것으로서, 보다 상세하게는 화학기상증착장치 등과 같은 공정챔버에 반응가스를 공급하기 위한 가스공급관을 통과하는 반응가스를 예열시킬 수 있는 예열장치에 관한 것이다.The present invention relates to a preheating device for a gas supply pipe for a semiconductor manufacturing apparatus, and more particularly, to a preheating device capable of preheating a reaction gas passing through a gas supply pipe for supplying a reaction gas to a process chamber such as a chemical vapor deposition device. It is about.
반도체 장치를 제조함에 있어 복잡한 회로의 형성을 위하여는 증착이 필수적이라 할 수 있으며, 일반적으로 화학기상증착(CVD ; Chemical Vapor Deposition)이 널리 사용되고 있다. 화학기상증착은 그 압력에 따라 상압화학기상증착(APCVD), 저압화학기상증착(LPCVD) 및 고압화학기상증착(HPCVD)으로 나뉘며, 적층될 물질 원자들을 포함하는 화학물질과 기타 반응가스들을 반응실로 도입하고, 에너지원에 따라 가열이나 플라즈마 또는 자외선을 투입하여 적층될 물질 원자들을 포함하는 화학물질과 반응가스 간의 반응을 유도하여 적층될 물질원자들이 웨이퍼 상에 증착되어 적층되도록 하는 것이다.In the manufacture of semiconductor devices, deposition is essential for the formation of complex circuits. In general, chemical vapor deposition (CVD) is widely used. Chemical vapor deposition is divided into atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), and high pressure chemical vapor deposition (HPCVD) depending on the pressure, and chemicals and other reaction gases containing the material atoms to be deposited into the reaction chamber. It is introduced to induce a reaction between the chemicals and the reaction gas including the material atoms to be deposited by heating or plasma or ultraviolet light depending on the energy source so that the material atoms to be deposited are deposited and deposited on the wafer.
상기한 바와 같은 화학기상증착반응은 공정챔버나 공정튜브 등과 같이 외기와 구분되어 엄격한 반응환경을 이루는 공간내에서 수행되며, 또한 공정챔버나 공정튜브 내에 위치한 웨이퍼와 반응하여 소정의 적층물질을 웨이퍼 상에 공급하기 위한 물질을 포함하는 반응가스들이 상기 공정챔버나 공정튜브내로 공급되어야 한다.As described above, the chemical vapor deposition reaction is performed in a space that forms a strict reaction environment by separating the outside air, such as a process chamber or a process tube, and also reacts with a wafer located in the process chamber or process tube to deposit a predetermined layer of material on the wafer. Reaction gases containing a substance for supplying to the process must be supplied into the process chamber or process tube.
따라서, 도1에 도시한 바와 같이, 상기한 공정챔버(1)들에 반응가스 및 질소가스와 같은 공정가스들을 유입시키기 위한 가스공급관(2)이 연결되어 있어야 한다.Therefore, as shown in FIG. 1, the gas supply pipe 2 for introducing process gases such as reaction gas and nitrogen gas should be connected to the process chambers 1 described above.
한편, 상기와 같이 가스공급관(2)을 통하여 공정챔버(1)에 공급되는 반응가스들 중에는 적절한 반응의 수행을 위하여 예열되어야 할 필요가 있는 경우가 많이 있으며, 특히 실란계통의 반응가스들은 적절하게 예열되어 공급되어야 반응부산물로서의 파티클의 발생을 억제할 수 있어, 공정설비의 유지, 보수를 보다 효율적으로 관리할 수 있게 되며, 예열되지 않은 상태에서 바로 공정챔버(1)에로 유입되는 경우, 부적절한 반응의 발생이나 과다한 파티클의 발생 등의 문제가 일어날 수 있다.On the other hand, among the reaction gases supplied to the process chamber (1) through the gas supply pipe (2) as described above, it is often necessary to be preheated in order to perform the appropriate reaction, in particular, the reaction gas of the silane system When preheated and supplied, it is possible to suppress the generation of particles as a reaction by-product, so that the maintenance and repair of the process equipment can be more efficiently managed, and when it is directly introduced into the process chamber 1 without being preheated, an inappropriate reaction Problems such as the occurrence of excessive particles or excessive particles can occur.
본 발명의 목적은, 공정챔버에 공급되는 반응가스를 예열하기 위한 반도체 제조장치용 가스공급관의 예열장치를 제공하는 데 있다.An object of the present invention is to provide a preheating apparatus of a gas supply pipe for a semiconductor manufacturing apparatus for preheating a reaction gas supplied to a process chamber.
도1은 가스공급관을 갖는 종래의 화학기상증착장치를 개략적으로 도시한 구성도이다.1 is a schematic view showing a conventional chemical vapor deposition apparatus having a gas supply pipe.
도2는 본 발명의 하나의 구체적인 실시예에 따른 가스공급관의 예열장치를 개략적으로 도시한 측단면도이다.Figure 2 is a side cross-sectional view schematically showing a preheating device of a gas supply pipe according to one specific embodiment of the present invention.
도3은 본 발명의 다른 하나의 구체적인 실시예에 따른 가스공급관의 예열장치를 개략적으로 도시한 측단면도이다.Figure 3 is a side cross-sectional view schematically showing a preheating device of a gas supply pipe according to another specific embodiment of the present invention.
※도면의 주요부분에 대한 부호의 설명※ Explanation of symbols for main parts of drawing
1 : 공정챔버 2 : 가스공급관1: process chamber 2: gas supply pipe
3 : 단일가스관 4 : 가열관3: single gas pipe 4: heating pipe
5 : 외관 6 : 냉각관5: appearance 6: cooling tube
7 : 이중가스관7: double gas pipe
상기 목적을 달성하기 위한 본 발명에 따른 반도체 제조장치용 가스공급관의 예열장치는, 반응가스가 흐르는 가스공급관의 외주면에 가열관을 취부시키고, 내주면에 냉각관이 취부된 외관으로 상기 가열관이 취부된 가스공급관을 감싸서 이루어진다.In the preheating apparatus of the gas supply pipe for semiconductor manufacturing apparatus according to the present invention for achieving the above object, the heating tube is attached to the outer peripheral surface of the gas supply pipe flowing reaction gas, the cooling tube is attached to the inner peripheral surface It is made by wrapping the supplied gas supply pipe.
상기 가열관은 상기 가스공급관의 외주면에 권회되어 취부될 수 있으며, 그에 의하여 가스공급관과 가열관의 접촉면적을 증대시킬 수 있도록 한다.The heating tube may be wound and mounted on an outer circumferential surface of the gas supply tube, thereby increasing the contact area between the gas supply tube and the heating tube.
상기 가열관으로 전기저항에 의한 주울열을 발생시켜 주변을 가열시키는 전열선이 매립된 가열관이나 또는 고온의 유체의 통과에 의하여 주변을 가열시키는 유체관이 사용될 수 있다.The heating tube may be a heating tube in which a heating wire for generating Joule heat by electrical resistance is heated to the heating tube, or a fluid tube for heating the surroundings by the passage of a high temperature fluid.
또한, 상기 냉각관도 상기 외관의 내주면에 권회되어 취부될 수 있으며, 특히 상기 가열관과 접촉하도록 취부될 수 있으며, 그에 의하여 가열관의 냉각이 용이하도록 이루어진다.In addition, the cooling tube may also be wound and mounted on the inner circumferential surface of the exterior, and in particular, the cooling tube may be mounted in contact with the heating tube, thereby facilitating cooling of the heating tube.
상기 냉각관으로 저온의 유체의 통과에 의하여 주변을 냉각시키는 유체관이 사용될 수 있다.A fluid tube that cools the surroundings by passing a low temperature fluid into the cooling tube may be used.
또한, 상기 가스공급관은 단일의 반응가스를 공급하기 위한 단일가스관이 사용되거나 또는 2가지의 반응가스를 공급하기 위한 이중가스관이 사용될 수 있다.Also, the gas supply pipe may be a single gas pipe for supplying a single reaction gas or a double gas pipe for supplying two reaction gases.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도2에 도시한 바와 같이, 본 발명에 따른 반도체 제조장치용 가스공급관의 예열장치는 반응가스가 흐르는 가스공급관(2)의 온도조절을 위하여 가열관(4)과 냉각관(6)이 인접하게 취부되도록 하고, 이들을 하나의 외관(5)으로 감싸서 이루어짐을 특징으로 한다.As shown in FIG. 2, in the preheating apparatus of the gas supply pipe for a semiconductor manufacturing apparatus according to the present invention, the heating tube 4 and the cooling tube 6 are adjacent to each other to adjust the temperature of the gas supply tube 2 through which the reaction gas flows. To be mounted, characterized in that it is made by wrapping them in one exterior (5).
여기에서 가열관(4)으로는 전기저항에 의한 주울열을 발생시켜 주변을 가열시키는 전열선이 매립된 가열관(4)이나 또는 고온의 유체의 통과에 의하여 주변을 가열시키는 유체관이 사용될 수 있으며, 전열선이 매립된 가열관(4)은 당해 기술분야에서 통상의 지식을 갖는 자에게는 상용적으로 구입하여 사용할 수 있을 정도로 공지된 것이며, 또한 고온의 유체가 흐를 수 있는 유체관은 열전도도가 우수한 금속관에 고온의 유체를 통과시켜서 이루어지는 것으로서, 역시 당해 기술분야에서 숙련된 자에게는 용이하게 이해될 수 있는 것임은 자명한 것이다.Here, the heating tube 4 may be a heating tube 4 in which a heating wire for heating joules by heating the electric resistance is embedded or a fluid tube for heating the surroundings by the passage of a high temperature fluid. The heating tube 4 in which the heating wire is embedded is known to be commercially available to those skilled in the art, and the fluid tube through which the high temperature fluid can flow is excellent in thermal conductivity. It is obvious that it is made by passing a high temperature fluid through a metal tube, and also can be easily understood by those skilled in the art.
또한, 상기 냉각관(6) 역시 저온의 유체가 흐를 수 있는 유체관으로서, 열전도도가 우수한 금속관에 저온의 유체를 통과시켜서 이루어지는 것으로서, 역시 당해 기술분야에서 숙련된 자에게는 용이하게 이해될 수 있는 것임은 자명한 것이다.In addition, the cooling tube 6 is also a fluid tube through which low-temperature fluid can flow, and is formed by passing a low-temperature fluid through a metal tube having excellent thermal conductivity, which can be easily understood by those skilled in the art. It is obvious.
특히, 상기 가열관(4)과 냉각관(6)들은 모두 상기 가스공급관(2)의 주위에 인접하게 위치되도록 하여 권회시켜 취부될 수 있으며, 이들 가열관(4)과 냉각관(6)들의 권회에 의하여 표면적을 크게 증대시킴으로써 단위면적 당 열의 출입량을 크게 할 수 있다.In particular, the heating tube 4 and the cooling tube 6 may both be wound and mounted so as to be positioned adjacent to the gas supply tube 2, and the heating tube 4 and the cooling tube 6 may be mounted. By enlarging the surface area by winding, the amount of heat entering and leaving per unit area can be enlarged.
더욱이, 상기 가스공급관(2)은 단일의 반응가스를 공급하기 위한 단일가스관(3)이 사용되거나 또는 2가지의 반응가스를 공급하기 위한 이중가스관(7)이 사용될 수 있으며, 이러한 단일가스관(3)이나 이중가스관(7)은 모두 당해 기술분야에서 통상의 지식을 갖는 자에게는 용이하게 이해될 수 있을 정도로 공지된 것이며, 또 이들을 상용적으로 구입하여 사용할 수 있는 것임은 자명한 것이다.Moreover, the gas supply pipe 2 may be a single gas pipe 3 for supplying a single reaction gas or a double gas pipe 7 for supplying two reaction gases, and such a single gas pipe 3 may be used. ) And the double gas pipes 7 are both known to be easily understood by those skilled in the art, and it is obvious that they can be purchased and used commercially.
상기한 바와 같은 구성에 의하여, 상기 단일가스관(3)이나 이중가스관(7)의 주위에 권회된 가열관(4)에 의한 가열과 냉각관(6)에 의한 냉각을 선택적으로 조절함으로써 상기 단일가스관(3)이나 이중가스관(7)을 통하여 흐르는 반응가스를 가열 또는 냉각시킬 수 있도록 함으로써 적절한 온도로 예열될 수 있도록 할 수 있다.By the configuration as described above, the single gas pipe is selectively controlled by heating by the heating pipe 4 wound around the single gas pipe 3 or the double gas pipe 7 and cooling by the cooling pipe 6. By allowing the reaction gas flowing through (3) or the double gas pipe 7 to be heated or cooled, it can be preheated to an appropriate temperature.
따라서, 본 발명에 의하면 공정챔버(1)에 공급되는 반응가스가 공정챔버(1)내로 유입되기 전에 미리 예열토록 함으로써 공정챔버(1) 내에서 최적의 반응조건을 형성할 수 있도록 하여 반도체 장치의 품질 및 수율을 향상시키는 효과가 있으며, 또한 반응가스의 예열에 의하여 파티클의 발생을 최소화하여 공정챔버(1)를 포함하는 가스공급관(2)들의 유지, 보수를 간편하게 하는 효과가 있다.Therefore, according to the present invention, the reaction gas supplied to the process chamber 1 is preheated before it is introduced into the process chamber 1, so that an optimal reaction condition can be formed in the process chamber 1, There is an effect of improving the quality and yield, and also minimize the generation of particles by the preheating of the reaction gas has the effect of simplifying the maintenance, repair of the gas supply pipe (2) including the process chamber (1).
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960067452A KR100234537B1 (en) | 1996-12-18 | 1996-12-18 | Pre-heating apparatus of gas supplying tube for semiconductor fabricating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960067452A KR100234537B1 (en) | 1996-12-18 | 1996-12-18 | Pre-heating apparatus of gas supplying tube for semiconductor fabricating system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980048804A true KR19980048804A (en) | 1998-09-15 |
| KR100234537B1 KR100234537B1 (en) | 1999-12-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019960067452A KR100234537B1 (en) | 1996-12-18 | 1996-12-18 | Pre-heating apparatus of gas supplying tube for semiconductor fabricating system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100481008B1 (en) * | 2002-06-03 | 2005-04-07 | 주성엔지니어링(주) | Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using the same |
| KR100483719B1 (en) * | 2002-05-24 | 2005-04-15 | 주성엔지니어링(주) | TaN thin film forming method |
| KR100560306B1 (en) * | 2003-08-02 | 2006-03-14 | 동부아남반도체 주식회사 | Injection valve and chemical supply system |
| KR100951889B1 (en) * | 2007-12-07 | 2010-04-12 | 세메스 주식회사 | Apparatus for providing a gas and apparatus for depositing a thin film including the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102267838B1 (en) * | 2019-05-28 | 2021-06-22 | 주식회사 카보넥스 | Apparatus for manufacturing a nanostructure of silicon compound |
-
1996
- 1996-12-18 KR KR1019960067452A patent/KR100234537B1/en not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100483719B1 (en) * | 2002-05-24 | 2005-04-15 | 주성엔지니어링(주) | TaN thin film forming method |
| KR100481008B1 (en) * | 2002-06-03 | 2005-04-07 | 주성엔지니어링(주) | Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using the same |
| KR100560306B1 (en) * | 2003-08-02 | 2006-03-14 | 동부아남반도체 주식회사 | Injection valve and chemical supply system |
| KR100951889B1 (en) * | 2007-12-07 | 2010-04-12 | 세메스 주식회사 | Apparatus for providing a gas and apparatus for depositing a thin film including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100234537B1 (en) | 1999-12-15 |
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