KR19980022877A - Manufacturing method of FED device having four electrodes - Google Patents

Abstract

The present invention relates to a manufacturing method of a FED device having four electrodes to enhance the focusing effect by the focusing electrode structure of the emitter of the FED device, the gate after depositing the cathode transparent electrode 12 on the glass 10 Depositing the insulating film 14, applying the photoresist 18, and then inclining and forming the gate electrode 14 by the sputtering method, and removing the photoresist 18 on the gate electrode 14; After forming the acceleration electrode insulating film 22 and flattening, and coating the photoresist thereon, only the portion exposed by self-alignment by back-exposure is applied to the photoresist 11, thereby accelerating the 28) removing the photoresist after depositing with E-BEAM, forming a focusing electrode insulating film 24 on the accelerating electrode 28, coating the photoresist 27, and then applying the photoresist (back-exposure). After patterning 27, the insulating film for focusing electrode 24 is tilted. And slumping the photoresist 27 for anisotropic etching and etching until the transparent electrode 12 is exposed by reactive ion etching, and removing the photoresist 27 and focusing by E-BEAM deposition. Electrodes emitted by directional deposition of the electrode 26, Al deposition at a grazing angle, vertical deposition of the tip metal 32 with E-BEAM to form the emitter tip 35, and then removal of the Al layer. There is a feature that can focus without dispersing.

Description

Manufacturing method of FED device having four electrodes

The present invention relates to an FED (FIELD-EMISSION DISPLAY) device, and more particularly to a FED manufacturing method having four electrodes to enhance the focusing effect by the emitter focusing electrode structure of the FED device.

In general, the FED device emits electrons from the emitter tip and collides with the fluorescent material of the anode, in which the transparent conductive film is formed. A field emission device that displays a desired image by using a device, and has the advantage of expressing a high-resolution and high-brightness color pattern with minimal power, and can replace other display devices such as a cathode ray tube or a liquid crystal display (LCD). Many studies have been conducted.

In general, a FED device as a flat panel display includes a silicon substrate, a cathode having a conical tip emitter formed on the silicon substrate to emit electrons, a gate controlling a current by electrons emitted from the tip emitter, and a fluorescent light. An anode to which the material is applied and a spacer that maintains a constant distance between the tip emitter and the anode.

One of the major problems with such FED devices is to increase the density of the electron current emitted from the emitter to increase the screen brightness on the display.

The cross section of the conventional FED formed as above is shown in FIG.

In the conventional FED apparatus shown in FIG. 1, a cathode transparent electrode (INDIUM-TIN OXIDE) 2 is deposited on the glass 1, which is a rear substrate, and the emitter tip 9 is a gate insulating film 3. Formed on the glass 1 as described above, and a gate electrode 3 on which the gate electrode 3 was deposited, there were a triode type and a diode emitter.

In the triode type as described above, since the electron beam emitted from the emitter tip 9 has only one gate electrode 4, the electron beam 4 is dispersed or straight, so that the current density of the electrons is reduced and the brightness of the screen on the display is reduced, There was a drawback that the clarity is blurred and makes the user's eyes easily tired.

In addition, there is a problem that the power consumption is increased because the electron beam is not focused and distributed through the gate electrode 4 through the emitter tip 9.

Therefore, the present invention was devised in view of the above problems, and an object of the present invention is to install an acceleration electrode and a focusing electrode in a tip-type FED using a metal, which can concentrate dispersion by improving emission characteristics. The present invention provides a method for manufacturing a FED having two electrodes.

1 is a cross-sectional view of a conventional FED apparatus.

2A to 2G are diagrams showing the process sequence of the FED apparatus of the present invention.

Explanation of symbols for main parts of the drawings

10: glass 11: photoresist

12: transparent electrode 18: photoresist

14 gate electrode 20 insulating film for gate

22: insulating film for acceleration electrode 24: insulating film for focusing electrode

26: focusing electrode 28: acceleration electrode

29: Al 32: metal

35: emitter tip

Therefore, in order to achieve this purpose, the FED manufacturing method having four gate electrodes of the present invention, in a field emission display device (FED), deposits a gate insulating film after depositing a cathode transparent electrode on a glass, and then After applying (PHOTO RESIST) to form a gate electrode by the sputtering method to remove the photoresist, and to form an insulating film for the acceleration electrode on the gate electrode, and then planarized, the photoresist is coated thereon After the photo-resist is exposed to the self-aligned (SELF-ALIGN) by the back-exposure (Back EXPOSURE), by removing the photoresist after the deposition of the accelerating electrode on the E-BEAM thereon, acceleration After forming the insulating film for focusing electrode on the electrode, coating the photoresist, patterning the photoresist with back-exposure, and then the insulating film for focusing electrode is inclined and anisotropically After slumping the photoresist for each angle, etching is performed until the transparent electrode is exposed by reactive ion etching. After removing the photoresist, the directional electrode is directionally deposited by E-BEAM deposition. The Al layer is deposited at a grazing angle, and the tip metal is vertically deposited with E-BEAM to form an emitter tip, and then the Al layer is removed.

A method of manufacturing a FED having four gate electrodes as described above will be described in detail with reference to the accompanying drawings.

2A to 2G are diagrams showing a FED manufacturing process.

As shown in FIG. 2A, the cathode transparent electrode 12 is deposited on the glass 10, the gate insulating layer 14 is deposited, the photoresist 18 is applied, the inclination etching is about 45 °, and then sputtering is performed. Thus, the gate electrode 14 is formed and the photoresist 18 is removed.

After forming the insulating film for acceleration electrodes 22 on the gate electrode 14 of Figs. 2b and 2c, planarizing the undesired portions where the curvature is formed, coating the photoresist thereon, and exposing them to self-alignment by back-exposure. The photoresist 11 is applied only to the portion where it has been applied, and the photoresist is removed after the acceleration electrode 28 is deposited on the E-BEAM.

After forming the focusing electrode insulating film 24 on the accelerating electrode 28, coating the photoresist 27, patterning the photoresist 27 by back-exposure, and then drawing the focusing electrode insulating film 24. As shown in 2D, the photoresist 27 is heated by a slumping process for anisotropic etching to cause the photoresist 27 to flow down to the portion where the undercut is formed, and then the transparent electrode 12 is subjected to reactive ion etching. Etch until it is exposed.

2e, 2f, and 2g, after removing the photoresist 27, the directional electrode 26 is directionally deposited by E-BEAM deposition, Al is deposited at a grazing angle, and the tip metal 32 is E-BEAM. After forming the emitter tip 35 by vertical deposition, the Al layer is lifted off, and then the end of the gate electrode is completely separated by wet etching in order to secure a space between the electrode gate electrodes.

The FED manufactured by the above process sequence draws the electron beam of the tip 35 by the gate electrode 14 whose electron beam emitted from the emitter tip 35 is inclined 45 degrees to the upper side, and the acceleration electrode 28 Emitted by the electron beam The electron beam is accelerated and the electrons emitted to the outside by the focusing electrode 26 formed on the uppermost side are linearly focused.

Therefore, the present invention has the effect that the four-electrode FED can increase the brightness of the image on the display by increasing the electron current density of the electron beam emitted straight to the gate electrode to increase the sharpness of the image.

In addition, it is possible to focus dissipation and dissipation in the electron beam, thereby preventing unnecessary dispersing in advance, thereby reducing the amount of power.

Claims (1)

In the field emission type display device (FED), the gate insulating film 14 is deposited after the cathode transparent electrode 12 is deposited on the glass 10, the photoresist 18 is applied, and the film is then inclined and etched. Forming a gate electrode 14 and removing the photoresist 18 by After forming the insulating film 22 for the acceleration electrode on the gate electrode 14 and flattening, coating the photoresist thereon, only the portion exposed by self-alignment by back-exposure to apply the photoresist 11 Removing the photoresist by depositing the accelerating electrode 28 on the E-BEAM thereon; After forming the focusing electrode insulating film 24 on the accelerating electrode 28, after coating the photoresist 27, patterning the photoresist 27 by back-exposure, the focusing electrode insulating film 24 is inclined etched, Slumping the photoresist 27 for anisotropic etching and then etching until the transparent electrode 12 is exposed by reactive ion etching; After the photoresist 27 is removed, the focusing electrode 26 is directionally deposited by E-BEAM deposition, then Al is deposited at a grazing angle, and the tip metal 32 is vertically deposited by E-BEAM to form the emitter tip 35. FED manufacturing method having four electrodes, characterized in that formed after the step of removing the Al layer.