KR102795783B1 - 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피 - Google Patents

2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피 Download PDF

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KR102795783B1
KR102795783B1 KR1020217040346A KR20217040346A KR102795783B1 KR 102795783 B1 KR102795783 B1 KR 102795783B1 KR 1020217040346 A KR1020217040346 A KR 1020217040346A KR 20217040346 A KR20217040346 A KR 20217040346A KR 102795783 B1 KR102795783 B1 KR 102795783B1
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photoresist layer
substrate
layer
layers
patterning
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KR20210156841A (ko
Inventor
앤드류 리앙
네이더 샴마
리치 와이즈
아킬 싱할
아르판 프라빈 마호로왈라
그레고리 블라추트
더스틴 재커리 오스틴
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램 리써치 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/115—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having supports or layers with means for obtaining a screen effect or for obtaining better contact in vacuum printing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020217040346A 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피 Active KR102795783B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257011688A KR20250054129A (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962849115P 2019-05-16 2019-05-16
US62/849,115 2019-05-16
PCT/US2020/033047 WO2020232329A1 (en) 2019-05-16 2020-05-15 Extreme ultraviolet (euv) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257011688A Division KR20250054129A (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피

Publications (2)

Publication Number Publication Date
KR20210156841A KR20210156841A (ko) 2021-12-27
KR102795783B1 true KR102795783B1 (ko) 2025-04-11

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KR1020217040346A Active KR102795783B1 (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피
KR1020257011688A Ceased KR20250054129A (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피

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US (1) US12372872B2 (enExample)
JP (1) JP7840155B2 (enExample)
KR (2) KR102795783B1 (enExample)
CN (1) CN113924528B (enExample)
SG (1) SG11202112490QA (enExample)
TW (2) TWI842899B (enExample)
WO (1) WO2020232329A1 (enExample)

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JP2023025686A (ja) 2021-08-10 2023-02-22 エーエスエム・アイピー・ホールディング・ベー・フェー パターン化された構造を形成する方法
TW202328816A (zh) * 2021-09-03 2023-07-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成用於極紫外光（ｅｕｖ）劑量減少之底層及包括該底層之結構的方法
TW202340524A (zh) 2022-04-13 2023-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 光敏性材料以及形成圖案化結構之方法

Citations (4)

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WO2005114332A1 (ja) 2004-05-21 2005-12-01 Pioneer Corporation 電子ビーム記録基板
US20130129995A1 (en) 2011-11-21 2013-05-23 Brewer Science Inc. Assist layers for euv lithography
US20170271150A1 (en) 2016-03-18 2017-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof
US20180166278A1 (en) * 2016-12-14 2018-06-14 International Business Machines Corporation Resist Having Tuned Interface Hardmask Layer For EUV Exposure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI275129B (en) 2001-06-22 2007-03-01 Taiwan Semiconductor Mfg Method to improve the line-width uniformity and figure fidelity of OPC mask by adding an assistant gap on the mask
US8257910B1 (en) * 2008-06-24 2012-09-04 Brewer Science Inc. Underlayers for EUV lithography
US9104113B2 (en) * 2013-01-07 2015-08-11 International Business Machines Corporation Amplification method for photoresist exposure in semiconductor chip manufacturing
GB201405335D0 (en) * 2014-03-25 2014-05-07 Univ Manchester Resist composition
WO2017065857A1 (en) 2015-10-14 2017-04-20 Exogenesis Corporation Method for ultra-shallow etching using neutral beam processing based on gas cluster ion beam technology
JP6770848B2 (ja) 2016-03-29 2020-10-21 東京エレクトロン株式会社 被処理体を処理する方法
CN114200776A (zh) * 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114332A1 (ja) 2004-05-21 2005-12-01 Pioneer Corporation 電子ビーム記録基板
US20130129995A1 (en) 2011-11-21 2013-05-23 Brewer Science Inc. Assist layers for euv lithography
US20170271150A1 (en) 2016-03-18 2017-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof
US20180166278A1 (en) * 2016-12-14 2018-06-14 International Business Machines Corporation Resist Having Tuned Interface Hardmask Layer For EUV Exposure

Also Published As

Publication number Publication date
TW202447756A (zh) 2024-12-01
US12372872B2 (en) 2025-07-29
SG11202112490QA (en) 2021-12-30
CN113924528B (zh) 2024-05-24
CN113924528A (zh) 2022-01-11
JP7840155B2 (ja) 2026-04-03
KR20210156841A (ko) 2021-12-27
JP2022533126A (ja) 2022-07-21
TW202113457A (zh) 2021-04-01
KR20250054129A (ko) 2025-04-22
US20220197147A1 (en) 2022-06-23
TWI842899B (zh) 2024-05-21
WO2020232329A1 (en) 2020-11-19

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