KR102748447B1 - 연질 x-선 산란계측에 기초한 오버레이 측정을 위한 방법 및 시스템 - Google Patents
연질 x-선 산란계측에 기초한 오버레이 측정을 위한 방법 및 시스템 Download PDFInfo
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- KR102748447B1 KR102748447B1 KR1020227027068A KR20227027068A KR102748447B1 KR 102748447 B1 KR102748447 B1 KR 102748447B1 KR 1020227027068 A KR1020227027068 A KR 1020227027068A KR 20227027068 A KR20227027068 A KR 20227027068A KR 102748447 B1 KR102748447 B1 KR 102748447B1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
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- H01L21/0276—
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- H01L22/12—
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- H01L22/20—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
- H10P76/2043—Photolithographic processes using an anti-reflective coating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062958089P | 2020-01-07 | 2020-01-07 | |
| US62/958,089 | 2020-01-07 | ||
| US17/137,840 US11698251B2 (en) | 2020-01-07 | 2020-12-30 | Methods and systems for overlay measurement based on soft X-ray Scatterometry |
| US17/137,840 | 2020-12-30 | ||
| PCT/US2021/012236 WO2021141933A1 (en) | 2020-01-07 | 2021-01-06 | Methods and systems for overlay measurement based on soft x-ray scatterometry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220122755A KR20220122755A (ko) | 2022-09-02 |
| KR102748447B1 true KR102748447B1 (ko) | 2024-12-30 |
Family
ID=76654307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227027068A Active KR102748447B1 (ko) | 2020-01-07 | 2021-01-06 | 연질 x-선 산란계측에 기초한 오버레이 측정을 위한 방법 및 시스템 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11698251B2 (https=) |
| EP (1) | EP4078244A4 (https=) |
| JP (1) | JP7535115B2 (https=) |
| KR (1) | KR102748447B1 (https=) |
| CN (1) | CN114981686B (https=) |
| IL (1) | IL294469B2 (https=) |
| TW (1) | TWI861336B (https=) |
| WO (1) | WO2021141933A1 (https=) |
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| KR20230166404A (ko) | 2022-05-30 | 2023-12-07 | 삼성전자주식회사 | X-선 스캐터링을 이용한 반도체 소자 측정방법, 및 그 측정방법을 포함한 반도체 소자 제조방법 |
| US20240060914A1 (en) * | 2022-08-16 | 2024-02-22 | Kla Corporation | Methods And Systems For X-Ray Scatterometry Measurements Employing A Machine Learning Based Electromagnetic Response Model |
| US12593661B2 (en) | 2022-08-29 | 2026-03-31 | Nanya Technology Corporation | Semiconductor structure with overlay mark, method of manufacturing the same, and system for manufacturing the same |
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| CN117451626B (zh) * | 2023-10-27 | 2024-05-28 | 清华大学 | 包含样品形状优化的叠层成像方法及装置 |
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| WO2025109498A2 (en) * | 2023-11-21 | 2025-05-30 | Nova Measuring Instruments Inc. | X-ray focusing with wavelength selection systems for semiconductor metrology |
| WO2025155641A1 (en) * | 2024-01-17 | 2025-07-24 | Gold Standard Radiation Detection, Inc. | Stabilized diode radiation source, and long-life rotating target for high-power particle beams |
| CN120426915B (zh) * | 2025-06-25 | 2025-09-16 | 安徽创谱仪器科技有限公司 | 一种x射线光源光斑尺寸的测试方法及系统 |
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| US10959318B2 (en) | 2018-01-10 | 2021-03-23 | Kla-Tencor Corporation | X-ray metrology system with broadband laser produced plasma illuminator |
| US10533848B2 (en) | 2018-03-05 | 2020-01-14 | Kla-Tencor Corporation | Metrology and control of overlay and edge placement errors |
| US10816486B2 (en) * | 2018-03-28 | 2020-10-27 | Kla-Tencor Corporation | Multilayer targets for calibration and alignment of X-ray based measurement systems |
| US11075126B2 (en) | 2019-02-15 | 2021-07-27 | Kla-Tencor Corporation | Misregistration measurements using combined optical and electron beam technology |
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| US20160320319A1 (en) * | 2015-04-28 | 2016-11-03 | Kla-Tencor Corporation | Computationally Efficient X-ray Based Overlay Measurement |
| US20170315055A1 (en) * | 2016-04-29 | 2017-11-02 | Asml Netherlands B.V. | Method and Apparatus for Determining the Property of a Structure, Device Manufacturing Method |
| US20180224753A1 (en) * | 2017-02-09 | 2018-08-09 | Asml Netherlands B.V. | Methods and apparatus for predicting performance of a measurement method, measurement method and apparatus |
| US20190017946A1 (en) * | 2017-07-11 | 2019-01-17 | Kla-Tencor Corporation | Methods And Systems For Semiconductor Metrology Based On Polychromatic Soft X-Ray Diffraction |
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| IL294469B2 (en) | 2024-03-01 |
| CN114981686A (zh) | 2022-08-30 |
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| CN114981686B (zh) | 2025-10-24 |
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| US11698251B2 (en) | 2023-07-11 |
| JP7535115B2 (ja) | 2024-08-15 |
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| US20210207956A1 (en) | 2021-07-08 |
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| KR20220122755A (ko) | 2022-09-02 |
| IL294469B1 (en) | 2023-11-01 |
| EP4078244A4 (en) | 2024-01-17 |
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