KR102690899B1 - Ceramic Susceptor and Manufacturing Method thereof - Google Patents

Abstract

The present invention relates to a ceramic susceptor and a method of manufacturing the same. The ceramic susceptor of the present invention includes a base substrate having a gas flow path for supplying cooling gas; an insulating plate fixed on the base substrate and having a gas hole; and a pore structure that communicates the gas flow path and the gas hole between the base substrate and the insulating plate, wherein the pore structure includes a cap fixed to a groove of the base substrate and the gas flow path inside the cap. a porous filter fixed to be in contact with the cap, and a through hole formed in the cap between the porous filter and the gas hole of the insulating plate, wherein the through hole is different from the porous filter side and the insulating plate side. It can be configured as a diameter.

Description

Ceramic susceptor and manufacturing method thereof {Ceramic Susceptor and Manufacturing Method thereof}

The present invention relates to ceramic susceptors such as electrostatic chucks, and in particular, to a ceramic susceptor with protected cooling gas holes and a method of manufacturing the same.

Semiconductor devices and display devices are manufactured through semiconductor processes such as chemical vapor deposition (CVD) process, physical vapor deposition (PVD) process, ion implantation process, and etching process. It is manufactured by stacking and patterning multiple thin film layers including a dielectric layer and a metal layer on a glass substrate, flexible substrate, or semiconductor wafer substrate. The chamber device for performing these semiconductor processes supports various substrates such as glass substrates, flexible substrates, and semiconductor wafer substrates, and is especially equipped with an electrostatic chuck (ESC) to fix the substrates using electrostatic force. .

In such an electrostatic chuck, the base substrate and the electrostatic chuck plate attached to the electrostatic chuck plate have a predetermined cooling structure in order to uniformly cool the substrate on the electrostatic chuck plate using an external cooling gas. In general, a cooling structure is provided so that the cooling gas flow path provided in the base substrate communicates with the gas hole provided in the electrostatic chuck plate. Various attempts have been made to prevent the bonding agent from penetrating into gas holes during the process of bonding the base material and the electrostatic chuck plate using a liquid bonding agent.

For example, the gas hole structure of the conventional electrostatic chuck is a straight structure through which the process gas (e.g., He) is directly supplied. In order to increase the distribution of the process gas supply and prevent arcing on the surface, the gas hole in the base material is piped. It has a structure in which a porous ceramic structure is inserted between the gas hole of the electrostatic chuck plate. For this purpose, in the past, gas holes were processed in advance before bonding the base material and the electrostatic chuck plate, and then bonding was performed, which resulted in clogging due to the bonding agent and the accumulation of bonding agent paste during the surface polishing process, resulting in a porous ceramic structure. It failed to prevent contamination, which caused poor gas supply, generation of particles, and arcing. In addition, even if the gas hole is processed after bonding the base material and the electrostatic chuck plate, clogging and contamination of the pore ceramic structure due to processing burrs, chipping, or bonding agent paste accumulated inside the gas hole during surface polishing. The problem is that it cannot be prevented.

Therefore, the present invention was made to solve the above-mentioned problems, and the purpose of the present invention is to process holes with different diameters in the processing of gas holes after joining the base material and the insulating plate, The object is to provide a ceramic susceptor and a method of manufacturing the same, which can prevent clogging and contamination of the porous ceramic structure due to burr, chipping, or binder paste and minimize the occurrence of arcing.

First, to summarize the features of the present invention, a ceramic susceptor according to one aspect of the present invention for achieving the above object includes a base substrate having a gas flow path for supplying cooling gas; an insulating plate fixed on the base substrate and having a gas hole; and a pore structure that communicates the gas flow path and the gas hole between the base substrate and the insulating plate, wherein the pore structure includes a cap fixed to a groove of the base substrate and the gas flow path inside the cap. a porous filter fixed to be in contact with the cap, and a through hole formed in the cap between the porous filter and the gas hole of the insulating plate, wherein the through hole is different from the porous filter side and the insulating plate side. It can be configured as a diameter.

The through hole may include two or more parts having different diameters in the longitudinal direction.

The through hole may include a first portion with a relatively small diameter toward the porous filter, and a second portion with a relatively large diameter toward the insulating plate.

The through hole may include a first part, a second part, and a third part whose diameter size discontinuously increases in a direction from the porous filter side to the insulating plate side.

The space between the base substrate on which the pore structure is fixed and the insulating plate may be fixed by a bonding agent.

In addition, the method of manufacturing a ceramic susceptor according to another aspect of the present invention includes placing a porous filter in a groove of a base material having a gas flow path for supplying cooling gas so as to be in contact with the gas flow path, and placing a cap to cover the porous filter. placing; Forming a bonding layer using a bonding agent and attaching a ceramic sheet; forming an electrode layer; and processing a hole through the ceramic sheet, the bonding layer, and the cap disposed on the base substrate so that a through hole is formed in the cap between the porous filter and the gas hole of the ceramic sheet. connect.

In the processing step, through holes penetrating the cap may be formed with different diameters on the porous filter side and the ceramic sheet side.

In the processing step, the through hole penetrating the cap may be formed to include two or more parts having different diameters in the longitudinal direction.

In the processing step, the through hole penetrating the cap may include a first part, a second part, and a third part whose diameter size discontinuously increases in the direction from the porous filter side to the insulating plate side. .

According to the ceramic susceptor and its manufacturing method according to the present invention, after bonding the base material and the insulating plate, processing burrs, chipping, or bonding agent paste is performed by processing through holes of different diameters as gas holes. It is possible to provide a ceramic susceptor that can prevent clogging and contamination of the pore structure and minimize the occurrence of arcing. Additionally, the gas injection rate in the prior art can be improved from less than 40% to more than 90%.

The accompanying drawings, which are included as part of the detailed description to aid understanding of the present invention, provide embodiments of the present invention and explain the technical idea of the present invention along with the detailed description.
1 is a schematic cross-sectional view of a ceramic susceptor according to an embodiment of the present invention.
Figure 2 is an enlarged cross-sectional view of portion 3A of Figure 1.
3A to 3D are cross-sectional views of gas holes in each process to explain the manufacturing process of a ceramic susceptor according to an embodiment of the present invention.
Figure 4 is a diagram for explaining a gas hole composed of three-stage hole parts with different diameters according to another embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the attached drawings. At this time, the same components in each drawing are indicated by the same symbols whenever possible. Additionally, detailed descriptions of already known functions and/or configurations will be omitted. The content disclosed below focuses on parts necessary to understand operations according to various embodiments, and descriptions of elements that may obscure the gist of the explanation are omitted. Additionally, some components in the drawings may be exaggerated, omitted, or shown schematically. The size of each component does not entirely reflect the actual size, and therefore the content described here is not limited by the relative sizes or spacing of the components drawn in each drawing.

In describing the embodiments of the present invention, if it is determined that a detailed description of the known technology related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, the terms described below are terms defined in consideration of functions in the present invention, and may vary depending on the intention or custom of the user or operator. Therefore, the definition should be made based on the contents throughout this specification. The terminology used in the detailed description is only for describing embodiments of the present invention and should in no way be limiting. Unless explicitly stated otherwise, singular forms include plural meanings. In this description, expressions such as “comprising” or “comprising” are intended to indicate certain features, numbers, steps, operations, elements, parts or combinations thereof, and one or more than those described. It should not be construed to exclude the existence or possibility of any other characteristic, number, step, operation, element, or part or combination thereof.

In addition, terms such as first, second, etc. may be used to describe various components, but the components are not limited by the terms, and the terms are used for the purpose of distinguishing one component from another component. It is used only as

Figure 1 is a schematic cross-sectional view of a ceramic susceptor 100 according to an embodiment of the present invention.

Referring to FIG. 1, a ceramic susceptor 100 according to an embodiment of the present invention includes a base substrate 200 and an insulating plate 300. The ceramic susceptor 100 is preferably of a circular type, but in some cases, it may be designed in other shapes such as oval or square.

The base substrate 200 may be formed as a multi-layer structure composed of a plurality of metal layers. These metal layers may be joined through a brazing process, welding process, or bonding process. The insulating plate 300 is fixed on the base substrate 200, and may be fixed on the base substrate 200 using a predetermined fixing means or an adhesive/joining means. The base substrate 200 and the insulating plate 300 may be manufactured separately and bonded, and in some cases, the structure of the insulating plate 300 may be formed directly on the upper surface of the base substrate 200 using a ceramic sheet, etc. possible.

As shown in FIG. 1, the insulating plate 300 may include an insulating layer 310, an electrode layer 320 on the insulating layer 310, and a dielectric layer 330 on the electrode layer 320.

The insulating layer 310 may be made of a ceramic material. In one embodiment, the insulating layer 310 is made of aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silicon oxide (SiO ₂ ), and barium oxide ( It may be made of a material selected from among materials such as BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO ₂ ), zirconium oxide (ZrO2), Y2O3, YAG, YAM, and YAP. The insulating layer 310 can be formed on the upper surface of the base substrate 200 using the above-described ceramic material by performing a thermal spray coating process or a ceramic sheet attachment process. The insulating layer 310 formed in this way performs the function of insulating between the base substrate 200 and the electrode layer 320.

The electrode layer 320 may be made of a conductive metal material. As an example, the electrode layer 320 may be formed of at least one of silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), and titanium (Ti), and more preferably, Can be formed of tungsten (W). The electrode layer 320 may be formed using a thermal spray coating process or a screen printing process. The electrode layer 320 has a thickness of approximately 1.0 μm to 100 μm. For example, when forming the electrode layer 320 using a screen printing process, a thickness of 1.0 to 30 ㎛ may be applied, and when forming the electrode layer 320 using a thermal spray coating process, a thickness of 30 to 100 ㎛ may be applied. However, it is undesirable because it is difficult to form a layer that is too thin, such as the thickness of the electrode layer 320 is less than 1.0㎛. In addition, in this case, the resistance value increases due to porosity and other defects in the electrode layer, and the resistance value increases. This is undesirable because it may cause the electrostatic adsorption power to decrease. Additionally, if the thickness of the electrode layer 320 is too thick, such as exceeding 100㎛, arcing may occur, which is not desirable. Therefore, it is desirable to apply the thickness of the electrode layer 320 to have an appropriate value in the range of about 1.0 ㎛ to 100 ㎛. The electrode layer 320 formed in this way can receive a bias when loading a substrate (not shown) placed on top of the dielectric layer 330 and generate electrostatic force to chucking it. When unloading a substrate (not shown), dechucking is performed by applying an opposite bias to the electrode layer 320 to cause discharge. The electrode layer 320 includes electrode patterns for chucking and dechucking, but is not limited to this, and in some cases, may further include electrode patterns for heaters or high-frequency electrode patterns for plasma generation.

The dielectric layer 330 may be made of a ceramic material. In one embodiment, the dielectric layer 330 is made of the same material as the above-described insulating layer 310: aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), Choose from materials such as silicon oxide (SiO ₂ ), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO ₂ ), zirconium oxide (ZrO2), Y2O3, YAG, YAM, YAP, etc. It can be made of any material.

The dielectric layer 330 can be formed on the upper surfaces of the insulating layer 310 and the electrode layer 320 using the above ceramic material by performing a thermal spray coating process or a ceramic sheet attachment process. The dielectric layer 330 formed in this way can perform the function of a dielectric so that electrostatic force is formed by the electrode layer 320.

When the ceramic susceptor 100 is mounted inside a chamber for a semiconductor process, the substrate (e.g., glass substrate, flexible substrate, semiconductor wafer substrate, etc.) on the insulating plate 300 is uniformly heated using external cooling gas. In order to cool, the base substrate 200 and the insulating plate 300 may be provided with a predetermined cooling structure as shown in FIG. 2 .

Figure 2 is an enlarged cross-sectional view of portion 3A of Figure 1.

Referring to FIG. 2, for example, the base substrate 200 has a cooling gas flow path 15 in an appropriate pattern therein for supply of cooling gas, and the cooling gas flow path 15 is the pore structure 90 of the present invention. Fluid communication is established with the cooling gas holes 30 of the insulating plate 300 through the communication hole 51 and the porous filter 40, and the cooling gas is ejected from the cooling gas holes 30 to cool the gas on the insulating plate 300. Ensures uniform cooling of the substrate. Helium gas (He) can be mainly used as the cooling gas at this time, but is not necessarily limited thereto. The cooling gas holes 30 of the insulating plate 300 may be formed in an appropriate number depending on the design.

In FIG. 1, chucking and dechucking can be performed by applying a bias to the electrode layer 320 from a predetermined electrode rod 291 provided through the hole 290 in the lower part of the ceramic susceptor 100. The cooling gas holes 30 may be formed in an appropriate number between predetermined electrode patterns forming the electrode layer 320 according to the design, and the pore structure 90 may be formed from the cooling gas flow path 15 to the upper surface of the insulating plate 300. ) can be formed to allow fluid communication through the porous filter 40 and the through holes 31, 321, and 322.

The ceramic susceptor 100 having a cooling gas hole 30 according to an embodiment of the present invention is mounted between the base substrate 200 and the insulating layer 310 of the insulating plate 300, and the gas flow path 15 ) and a pore structure (90) that communicates with the gas hole (30).

The pore structure 90 includes a cap 50 and a porous filter 40, which are fixed to the groove 290 of the base substrate 200. The porous filter 40 may be formed in an appropriate shape, such as a cylindrical shape, and is fixed to the inside of the cap 50 so as to be in contact with the gas flow path 15. The upper side of the cap 50 includes through holes 321 and 322 that communicate with the through hole 31 of the insulating plate 300, and these (31, 321, and 322) form the gas hole 30. The through holes 321 and 322 of the cap 50 are formed in the cap 50 between the gas hole 30 of the porous filter 40 and the insulating plate 300, and are connected to the porous filter 40 side and the insulating plate ( 300) and consists of different diameters on each side.

The porous filter 40 may be in direct contact with the gas flow path 15, and as shown in FIG. 2, a ring-shaped support 60 is provided between the bottom of the groove 290 of the base substrate 200 and the porous filter 40. When provided to support the porous filter 40, through the through hole 51 of the support 60 in contact with the gas flow path 15, the porous filter 40, and the two or more stages of through holes 321 and 322. , the gas flow path 15 and the gas hole 30 of the insulating plate 300 can be communicated.

The support 60, the cap 50, and the porous filter 40 may be made of a ceramic material, and the porous filter 40 does not allow contaminants such as particles to pass through, but has porous gaps that allow gas to pass through. . Such ceramic materials include, for example, aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silicon oxide (SiO ₂ ), and barium oxide ( It may be composed of a combination of one or more of BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO ₂ ), and zirconium oxide (ZrO 2 ).

The base substrate 200 has a cooling gas flow path 15 in an appropriate pattern therein for supply of cooling gas, and the cooling gas flow path 15 supplies the cooling gas of the insulating plate 300 through the pore structure 90 of the present invention. Fluid communication is established with the holes 30, so that cooling gas is ejected from the cooling gas holes 30 to uniformly cool the substrate on the insulating plate 300.

A ceramic sheet 313 is formed as an insulating layer 310 on the upper surface 250 of the base substrate 200 and the cap 50 of the support 50 through a bonding agent 312. An electrode layer 320 and a dielectric layer 330 are sequentially formed on the insulating layer 310 of the insulating plate 300. In this way, the base substrate 200 and the insulating plate 300 are fixed to each other by the bonding agent 312.

In addition, a coating layer 311 made of a ceramic material may be added on the upper surface 250 of the base substrate 200. The coating layer 311 may be formed to the height of the top surface of the cap 50 or a height smaller than that before forming the bonding agent 312.

In particular, the present invention provides a base material 200 and an insulating plate 300 to prevent clogging and contamination of the pore structure due to processing burrs, chipping, or binder paste and to minimize arcing. In processing the gas hole 30 after joining, two or more stages of through holes 321 and 322 as above are applied.

The through holes 321 and 322 of the cap 50 include portions whose diameters are changed in a direction perpendicular to the upper surface of the insulating plate 300. That is, the through holes 321 and 322 include two or more parts with relatively different diameters in a direction perpendicular to the upper surface of the insulating plate 300. As shown in the drawings, the through holes 321 and 322 may be composed of a first part 321 with a small diameter and a second part 322 with a relatively large diameter, but are not limited thereto, and the through holes ( 321, 322) can be formed in various ways to include two or more parts having different diameters in the longitudinal direction. For example, instead of the two-stage through holes 321 and 322 of the cap 50, a first part 331 whose diameter size discontinuously increases in the direction from the porous filter 40 side to the insulating plate 300 side, It may be configured in three or more stages to include a second part 332 and a third part 333 (see FIG. 4).

In this way, in the present invention, after bonding the base material 200 and the insulating plate 300, the gas hole 30 is processed using a through hole method with different diameters, thereby removing the processing burr, chipping, or bonding agent. A ceramic susceptor 100 can be provided that can prevent clogging and contamination of the pore structure due to paste and minimize the occurrence of arcing. Accordingly, the gas injection rate in the prior art can be improved from less than 40% to more than 90%.

3A to 3D are cross-sectional views of the gas hole 30 in each process to explain the manufacturing process of the ceramic susceptor 100 according to an embodiment of the present invention.

Referring to FIG. 3A, first, in order to manufacture a ceramic susceptor 100 having a cooling gas hole 30 according to an embodiment of the present invention, one or more Prepare a base substrate 200 with grooves 290 formed in advance. In the groove 290 of the base substrate 200, the porous filter 40 is first placed in contact with the gas flow path 15, and the cap 50 is placed to cover the porous filter.

However, in this way, the porous filter 40 may be in direct contact with the gas flow path 15, but a support 60 such as a ring shape having a through hole 51 is placed and the porous filter 40 is placed thereon. A cap 50 may be placed to cover the filter. When the support 60 is provided, the support 60 may support the porous filter 40 between the bottom of the groove 290 of the base substrate 200 and the porous filter 40.

The support 60, cap 50, and porous filter 40 may be made of ceramic material, and the porous filter 40 is porous so that contaminants such as particles cannot pass through, but gas can pass through. There are gaps. Such ceramic materials include, for example, aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silicon oxide (SiO ₂ ), and barium oxide ( It may be composed of a combination of one or more of BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO ₂ ), and zirconium oxide (ZrO 2 ).

In addition, referring to FIG. 3B, after the pore structure 90 including the support 60, the cap 50, and the porous filter 40 is disposed on the base substrate 200, the bonding agent 312 may be formed immediately, but prior to that, the coating layer 311 may be formed around the cap 50 on the base substrate 200 to be equal to or lower than the height of the cap 50.

Next, a bonding layer is formed using a bonding agent 312 such as silicone paste, and a ceramic sheet 313 to be laminated is placed on the bonding agent 312. The bonding agent 312 may be in the form of a silicone paste and strengthens the base material 200 and the insulating plate 300 by compressing and solidifying the base material 200 and the insulating plate 300 including the ceramic sheet 313. It can be easily joined.

That is, the insulating layer 310 is formed by stacking and attaching the ceramic sheet 313 on the bonding agent 312. As described above, the coating layer 311 and the ceramic sheet 313 may be made of a ceramic material, for example, aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), silicon carbide (SiC), and silicon nitride (Si). ₃ N ₄ ), silicon oxide (SiO ₂ ), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO ₂ ), and zirconium oxide (ZrO2). It can be done.

Although not shown in the drawing, an electrode layer 320 may be formed at an appropriate position on the insulating layer 310 of the insulating plate 300 as shown in FIG. 1, and a dielectric layer 330 may be formed thereon. The electrode layer 320 includes electrode patterns for chucking and dechucking for the electrostatic chuck function as described above, and may further include radio frequency (RF) electrode patterns for plasma generation. Furthermore, the present invention is not limited to this, and in some cases, heating element patterns for a heater function may also be disposed within the insulating plate 300. The dielectric layer 330 may also be formed of a ceramic material such as the ceramic sheet 313.

Thereafter, the upper structure including the ceramic sheet 313, that is, the insulating plate 300 including the insulating layer 310, the electrode layer 320, and the dielectric layer 330, is formed by pressing and solidifying the base substrate 200. , the base substrate 200 and the insulating plate 300 can be firmly bonded.

Referring to FIG. 3C, a pore structure 90 is disposed on the base substrate 200 and an upper structure, that is, an insulating plate 300 including an insulating layer 310, an electrode layer 320, and a dielectric layer 330, is disposed on the base substrate 200. After is formed, the gas hole 30 is processed.

That is, the bonding layer of the bonding agent 312 is formed from the outside of the insulating layer 310 including the ceramic sheet 313, or from the outside of the insulating layer 310 including the electrode layer 320 and the dielectric layer 330 thereon. , the gas hole 30 is processed to penetrate the cap 50 disposed on the base substrate 200.

The gas hole 30 is processed by machining two or more stages of through holes 312 and 322. First, as shown in FIG. 3C, a portion of the thickness of the cap 50 disposed on the base substrate 200 from the outside (e.g., up to 1/3, 1/2, 2/3, etc. from the top, preferably the cap) (Leaving only 10% of the thickness of (50)) to form the machined hole portion (31) using laser processing, etc.

Referring to FIG. 3D, after processing the hole portion 31, the hole portion 321 is processed to penetrate the cap 50 to the remainder of the cap 50 placed on the base substrate 200 using laser processing, etc. forms.

In this way, through holes 321 and 322 are formed in the cap 50 between the porous filter 40 and the gas hole 30 of the ceramic sheet 313, and the through holes 321 and 322 are formed in the porous filter. In the longitudinal direction, such as forming to include a first part 321 with a small diameter on the side of (40) and a second part 322 with a large diameter on the gas hole 30 side of the ceramic sheet 313, It may be formed to include two or more parts having different diameters. In the through holes 321 and 322, the diameter of the first part 321 is preferably 5 to 20% smaller than the diameter of the second part 31.

Figure 4 is a diagram for explaining a gas hole composed of three-stage hole parts with different diameters according to another embodiment of the present invention.

Referring to FIG. 4, after forming the hole portion 31 up to a portion of the thickness of the cap 50 disposed on the base substrate 200 as shown in FIG. 3C, the hole portion 321 is formed once as shown in FIG. 3D. It does not end there, and multiple hole machining with different diameters may be performed.

For example, instead of the two-stage through holes 321 and 322 of the cap 50, the through holes 331, 332, and 333 of the cap 50 are connected from the porous filter 40 side to the insulating plate 300 side. It may be composed of three stages to include a first part 331, a second part 332, and a third part 333 whose diameter size discontinuously increases in the direction, and more parts are included as needed. It is also possible to configure it in three or more stages. To this end, the diameter of the third portion 333 may be greater than or equal to the diameter of the second portion 322 created by the hole portion 31 formed as shown in FIG. 3C.

In this way, through holes 321 and 322 are formed in the cap 50 between the porous filter 40 and the gas hole 30 of the ceramic sheet 313, and the through holes 321 and 322 are formed in the porous filter. In the longitudinal direction, such as forming to include a first part 321 with a small diameter on the (40) side and a second part 322 with a large diameter on the gas hole 30 side of the ceramic sheet 313, It may be formed to include two or more parts having different diameters. In the through holes 321 and 322, the diameter of the first part 321 is preferably 5 to 20% smaller than the diameter of the second part 31.

In this way, the hole portion 31 and two or more stages of through holes 321, 322 / 331, 332, 333 are formed from the outside of the insulating plate 300 to a portion of the thickness of the cap 50 disposed on the base substrate 200. The cooling gas holes 30 formed by can be formed in an appropriate number between predetermined electrode patterns forming the electrode layer 320 according to the design, and are formed on the upper surface of the insulating plate 300 from the cooling gas flow path 15. It can be formed so that fluid communication occurs through the porous filter 40 of the pore structure 90 and two or more stages of through holes 321, 322 / 331, 332, and 333.

As described above, the ceramic susceptor 100 according to an embodiment of the present invention has two or more stages of through holes with different diameters as gas holes 30 after bonding the base substrate 200 and the insulating plate 300. By processing using a processing method, it is possible to provide a ceramic susceptor 100 that can prevent clogging and contamination of the pore structure due to processing burrs, chipping, or binder paste and minimize the occurrence of arcing. Accordingly, the gas injection rate in the prior art can be improved from less than 40% to more than 90%.

As described above, the present invention has been described with specific details such as specific components and limited embodiments and drawings, but this is only provided to facilitate a more general understanding of the present invention, and the present invention is not limited to the above embodiments. , those of ordinary skill in the field to which the present invention pertains will be able to make various modifications and variations without departing from the essential characteristics of the present invention. Therefore, the spirit of the present invention should not be limited to the described embodiments, and the scope of the patent claims described later as well as all technical ideas that are equivalent or equivalent to the scope of this patent claim are included in the scope of the rights of the present invention. It should be interpreted as

Ceramic susceptor (100)
Base material (200)
Insulating Plate (300)
Insulating layer (310)
Electrode layer (320)
Dielectric layer (330)
Pore structures (90)
Through holes (321, 322 / 331, 332, 333)

Claims (9)

A base substrate having a gas flow path for supplying cooling gas;
an insulating plate fixed on the base substrate and having a gas hole; and
Comprising a pore structure that communicates the gas flow path and the gas hole between the base substrate and the insulating plate,
The pore structure includes a cap fixed to a groove of the base substrate and a porous filter fixed inside the cap to be in contact with the gas flow path,
Comprising a through hole formed in the cap between the porous filter and the gas hole of the insulating plate,
The through hole is a ceramic susceptor configured to have a larger diameter on the insulating plate side than on the porous filter side. According to paragraph 1,
The through hole includes a first portion having a relatively small diameter toward the porous filter, and a second portion having a relatively large diameter toward the insulating plate. According to paragraph 2,
A ceramic susceptor in which the diameter of the first part is 5 to 20% smaller than the diameter of the second part. According to paragraph 1,
The through hole is a ceramic susceptor including a first part, a second part, and a third part whose diameter size increases discontinuously from the porous filter side to the insulating plate side. According to paragraph 1,
A ceramic susceptor in which a space between the base substrate on which the pore structure is fixed and the insulating plate is fixed by a bonding agent. Placing a porous filter in a groove of a base material having a gas flow path for supplying cooling gas to be in contact with the gas flow path and placing a cap to cover the porous filter;
Forming a bonding layer using a bonding agent and attaching a ceramic sheet;
forming an electrode layer; and
Processing a hole through the ceramic sheet, the bonding layer, and the cap disposed on the base substrate so that a through hole is formed in the cap between the porous filter and the gas hole of the ceramic sheet,
In the step of machining the hole, the hole is machined to a larger diameter on the ceramic sheet side than on the porous filter side. According to clause 6,
In the processing step, the through hole penetrating the cap includes a first portion having a relatively small diameter toward the porous filter, and a second portion having a relatively large diameter toward the ceramic sheet. Manufacturing method. In clause 7,
A method of manufacturing a ceramic susceptor in which the diameter of the first part is 5 to 20% smaller than the diameter of the second part. According to clause 6,
In the processing step, the through hole penetrating the cap is formed by forming a ceramic column including a first part, a second part, and a third part whose diameter size discontinuously increases in the direction from the porous filter side to the ceramic sheet side. Scepter manufacturing method.