KR102672948B1 - Method for manufacturing semiconductor chips with die bonding sheets and film-type adhesives - Google Patents

Abstract

In the die bonding sheet 101, which has a base material 11 and is constructed by laminating an adhesive layer 12, an intermediate layer 13, and a film adhesive 14 on the base material 11 in this order, [above The value of [tensile modulus of elasticity at 0°C of the intermediate layer 13]/[tensile modulus of elasticity of the substrate 11 at 0°C] is 0.5 or less.

Description

Method for manufacturing semiconductor chips with die bonding sheets and film-type adhesives

The present invention relates to a die bonding sheet and a method of manufacturing a semiconductor chip formed with a film adhesive. This application claims priority based on Japanese Patent Application No. 2019-041886, filed in Japan on March 7, 2019, and uses the content here.

In the case of manufacturing a semiconductor device, a semiconductor chip and a semiconductor chip with a film adhesive provided on the back of the semiconductor chip are used. Here, the back side of the semiconductor chip means the side opposite to the side on which the circuit of the semiconductor chip is formed (in this specification, it may be abbreviated as “circuit formation surface”).

A semiconductor chip with a film adhesive is manufactured, for example, by the method shown below.

That is, first, a back grind tape (aka: surface protection tape) is attached to the surface of the semiconductor wafer on which the circuit is formed (in this specification, it may be abbreviated as “circuit formation surface”).

Next, a modified layer is formed inside the semiconductor wafer by irradiating laser light to focus on a focus set inside the semiconductor wafer. Next, using a grinder, the surface of the semiconductor wafer opposite to the circuit formation surface (in this specification, sometimes abbreviated as “back surface”) is ground, thereby adjusting the thickness of the semiconductor wafer to the target value. In addition, by using the grinding force applied to the semiconductor wafer at this time, the semiconductor wafer is divided at the site where the modified layer is formed, and a plurality of semiconductor chips are formed. The method of dividing a semiconductor wafer involving the formation of a modified layer in this way is called stealth dicing (registered trademark), and irradiates the semiconductor wafer with laser light to cut the semiconductor wafer in the irradiated area while cutting the semiconductor wafer. It is essentially completely different from laser dicing, which cuts from the surface.

Next, one die bonding sheet is attached to the above-mentioned grinded back side (in other words, ground surface) of these semiconductor chips fixed on the back grind tape. Here, examples of the die bonding sheet include those provided with a base material, and a pressure-sensitive adhesive layer and a film-type adhesive are laminated in this order on the base material. And in this case, the film adhesive in a die bonding sheet is affixed to the back surface of a semiconductor chip in a softened state by heating it to the right temperature. Thereby, the die bonding sheet can be stably attached to the semiconductor chip.

Next, after removing the back grind tape from the semiconductor chip, the die bonding sheet is cooled and stretched in a direction parallel to its surface (for example, the attachment surface of the film adhesive to the semiconductor chip), so-called expand. By doing so, the film adhesive is cut (split) along the outer periphery of the semiconductor chip.

As a result of the above, a semiconductor chip with a semiconductor chip and a film adhesive provided with a cut film adhesive formed on the back side of the semiconductor chip is obtained.

After obtaining the semiconductor chip with the film adhesive, the laminated sheet of the base material and the adhesive layer is stretched in a direction parallel to the surface while placing the semiconductor chip with the film adhesive on it (expand do). Additionally, while maintaining this state, the peripheral portion of the above-mentioned laminated sheet on which the semiconductor chip with the film adhesive is not placed is heated. As described above, while shrinking the peripheral portion, the distance between adjacent semiconductor chips (in this specification, sometimes referred to as “kerf width”) is appropriately maintained on the laminated sheet.

Next, the semiconductor chip on which the film adhesive is formed is separated from the laminated sheet and picked up. At this time, when the adhesive layer is curable, pickup becomes easier by curing the adhesive layer and lowering the adhesiveness.

As a result of the above, a semiconductor chip formed with a film adhesive used in the manufacture of a semiconductor device can be stably obtained.

The picked-up semiconductor chip is die-bonded to the circuit formation surface of the substrate using a film-type adhesive formed on the back side, and if necessary, one or more other semiconductor chips are further laminated on this semiconductor chip, and wire bonding is performed. After that, the whole thing is sealed with resin. Using the semiconductor package obtained in this way, the intended semiconductor device is ultimately manufactured.

In this way, the die bonding sheet provided with a film adhesive that can be cut by expand includes a base material, an adhesive layer, a base material layer (corresponding to the intermediate layer), and an adhesive layer (corresponding to the film adhesive). A dicing-die bonding tape (equivalent to the die bonding sheet) is disclosed, which is configured by sequentially stacking the base layer and having tensile properties in a specific range (see Patent Document 1). According to this die bonding sheet, by providing the base material layer corresponding to the intermediate layer, it is said that the film adhesive can be cut with high precision at the time of expansion.

Japanese Patent No. 5946650 Publication

As described above, when the die bonding sheet is expanded while cooling, the area between the semiconductor chips, the width of the so-called kerf, is sufficiently widened in response to the elongation of the substrate, and the film adhesive can be stably applied to the outer periphery of the semiconductor chip. It is desired to be able to cut (split) along.

In contrast, it is unclear whether the die bonding sheet disclosed in Patent Document 1 sufficiently possesses these characteristics.

The present invention is comprised of a base material, a pressure-sensitive adhesive layer, and a film-type adhesive, and when expansion is performed while cooling, the kerf width is sufficiently widened in response to the elongation of the base material, and the film-type adhesive is stably applied to the outer periphery of the semiconductor chip. The purpose is to provide a die bonding sheet that can be cut (divided) according to the present invention.

The present invention includes a base material, and is configured by laminating a pressure-sensitive adhesive layer, an intermediate layer, and a film adhesive on the base material in this order, [tensile elastic modulus Ei' at 0°C of the intermediate layer]/[of the above-described base material. A die bonding sheet having a tensile modulus of elasticity (Eb' at 0°C) of 0.5 or less is provided.

In the die bonding sheet of the present invention, the maximum width of the intermediate layer may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm.

The present invention is a method of manufacturing a semiconductor chip including a semiconductor chip and a film-type adhesive formed on the back side of the semiconductor chip, by irradiating laser light to focus on a focus set inside the semiconductor wafer, A process of forming a modified layer inside a semiconductor wafer, grinding the back side of the semiconductor wafer after forming the modified layer, and using the force applied to the semiconductor wafer during grinding to form a site where the modified layer is formed. In the step of dividing the semiconductor wafer to obtain a semiconductor chip group in which a plurality of semiconductor chips are aligned, and heating the die bonding sheet, applying a film adhesive thereto to the back side of all semiconductor chips in the semiconductor chip group. In the sticking process, the die bonding sheet after sticking in the semiconductor chip group is cooled and stretched in a direction parallel to its surface to cut the film adhesive along the outer periphery of the semiconductor chip, forming a plurality of the films. A process of obtaining a semiconductor chip group with a film adhesive in which semiconductor chips with a mold adhesive are aligned, and a base material, an adhesive layer, and an intermediate layer derived from the die bonding sheet after obtaining the semiconductor chip group with a film adhesive. Expand the laminated sheet in a direction parallel to the surface of the adhesive layer, and further heat the peripheral portion of the laminated sheet on which the semiconductor chip with the film adhesive is not placed while maintaining this state. and a step of separating and picking up a semiconductor chip formed with the film adhesive from the intermediate layer in the laminated sheet after heating the peripheral portion, wherein the maximum value of the width of the intermediate layer and the width of the semiconductor wafer are determined. A method for manufacturing a semiconductor chip with a film-type adhesive is provided, wherein the maximum difference is 0 to 10 mm.

According to the present invention, it is comprised of a base material, an adhesive layer, and a film adhesive, and when expansion is performed while cooling, the kerf width becomes sufficiently wide in relation to the elongation of the base material, and the film adhesive is stably applied to the semiconductor chip. A die bonding sheet that can be cut (split) along the outer circumference is provided.

1 is a cross-sectional view schematically showing a die bonding sheet according to an embodiment of the present invention.
FIG. 2 is a top view of the die bonding sheet shown in FIG. 1.
FIG. 3A is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor chip for which a die bonding sheet is used according to an embodiment of the present invention.
FIG. 3B is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor chip for which a die bonding sheet is used according to an embodiment of the present invention.
FIG. 3C is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor chip for which a die bonding sheet is used according to an embodiment of the present invention.
FIG. 4A is a cross-sectional view schematically illustrating a method of using a die bonding sheet according to an embodiment of the present invention.
Figure 4b is a cross-sectional view schematically illustrating a method of using a die bonding sheet according to an embodiment of the present invention.
Figure 4c is a cross-sectional view schematically illustrating a method of using a die bonding sheet according to an embodiment of the present invention.
Fig. 5 is a plan view schematically showing the evaluation object to explain the measurement points of the cuff width when evaluating cuff retention in the examples.

◇Die bonding sheet

A die bonding sheet according to an embodiment of the present invention includes a base material, and is configured by laminating an adhesive layer, an intermediate layer, and a film adhesive in this order on the base material, [tensile strength of the intermediate layer at 0° C. The value of elastic modulus Ei']/[tensile elastic modulus Eb' at 0°C of the above base material] is 0.5 or less.

The die bonding sheet of the present embodiment has a value of [tensile elasticity modulus Ei' of the intermediate layer at 0°C]/[tensile elasticity modulus Eb' of the base material at 0°C] of the upper limit or less, thereby reducing the elongation of the base material. In contrast, since the kerf width can be sufficiently widened, the film adhesive can be stably cut (split) along the outer periphery of the semiconductor chip when the die bonding sheet is expanded.

Meanwhile, in this specification, unless otherwise specified, “laminated sheet” means a laminated sheet having a structure in which the above-described base material, adhesive layer, and intermediate layer are laminated.

The die bonding sheet of this embodiment is preferably used on a semiconductor wafer after dicing. Here, the semiconductor wafer after dicing is one in which a plurality of semiconductor chips are aligned in advance, or a plurality of semiconductor chips aligned in this way, and in addition, the semiconductor wafer is not divided into semiconductor chips. It may include areas.

This object of use as a die bonding sheet is obtained, for example, by dicing a semiconductor wafer as follows.

That is, first, a back grind tape (surface protection tape) is attached to the surface of the semiconductor wafer on which the circuit is formed (i.e., the circuit formation surface).

Next, a modified layer is formed inside the semiconductor wafer by irradiating laser light to focus on a focus set inside the semiconductor wafer. The position of the focus at this time is the planned division (dicing) position of the semiconductor wafer, and is set so that semiconductor chips of the desired size, shape, and number can be obtained from the semiconductor wafer.

Next, using a grinder, the surface (i.e., back side) of the semiconductor wafer opposite to the circuit formation surface is ground. As a result, by adjusting the thickness of the semiconductor wafer to the target value and using the grinding force applied to the semiconductor wafer at this time, the semiconductor wafer is divided at the formation site of the modified layer into a plurality of pieces. Forms a semiconductor chip. Unlike other parts of the semiconductor wafer, the modified layer of the semiconductor wafer is altered by irradiation of laser light, and its strength is weakened. For this reason, by applying force to the semiconductor wafer on which the modified layer is formed, force is applied to the modified layer inside the semiconductor wafer, and the semiconductor wafer is split at the portion of the modified layer, thereby obtaining a plurality of semiconductor chips.

On the other hand, depending on the conditions at the time of grinding, there are cases where division into semiconductor chips is not performed in some areas of the semiconductor wafer.

Hereinafter, the die bonding sheet will be described in detail with reference to the drawings. Meanwhile, in the drawings used in the following description, in order to make the features of the present invention easier to understand, the main parts may be enlarged for convenience, and the dimensional ratios of each component are not limited to being the same as the actual ones. No.

Figure 1 is a cross-sectional view schematically showing a die bonding sheet according to an embodiment of the present invention, and Figure 2 is a plan view of the die bonding sheet shown in Figure 1.

Meanwhile, in the drawings after FIG. 2, the same components as those shown in the already described drawings are given the same reference numerals as in the described drawings, and detailed description thereof is omitted.

The die bonding sheet 101 shown here has a base material 11, and is configured by laminating an adhesive layer 12, an intermediate layer 13, and a film adhesive 14 in this order on the base material 11. there is. The die bonding sheet 101 further has a release film 15 on the film adhesive 14.

In the die bonding sheet 101, the adhesive layer 12 is formed on one side (hereinafter sometimes referred to as “first side”) 11a of the substrate 11, and the adhesive layer 12 An intermediate layer 13 is formed on a surface 12a (hereinafter sometimes referred to as “first surface”) opposite to the side on which the substrate 11 is formed, and the adhesive layer 12 of the intermediate layer 13 ) A film adhesive 14 is formed on the surface 13a (hereinafter sometimes referred to as “first surface”) opposite to the side on which the film adhesive 14 is formed, and the intermediate layer 13 of the film adhesive 14 A release film 15 is formed on the surface 14a (hereinafter sometimes referred to as “first surface”) opposite to the side on which ) is formed. In this way, the die bonding sheet 101 is configured by laminating the base material 11, the adhesive layer 12, the intermediate layer 13, and the film adhesive 14 in this order in their thickness direction.

The die bonding sheet 101 is in a state with the release film 15 removed, and the first surface 14a of the film adhesive 14 is a semiconductor chip or a semiconductor wafer (not shown) that is not completely divided. , it is used by attaching it to the surface opposite to the circuit formation surface (i.e., the back side).

Meanwhile, in this specification, a laminate including a base material and an adhesive layer may be referred to as a “support sheet.” In Fig. 1, the reference numeral 1 indicates a support sheet.

The planar shapes of the middle layer 13 and the film adhesive 14 when viewed from above are all circular, and the diameters of the middle layer 13 and the film adhesive 14 are the same. .

And, in the die bonding sheet 101, the centers of the middle layer 13 and the film adhesive 14 are aligned with each other, that is, the positions of the outer peripheries of the middle layer 13 and the film adhesive 14 are these. They are all arranged to coincide in the radial direction.

The first surface 13a of the intermediate layer 13 and the first surface 14a of the film adhesive 14 both have smaller areas than the first surface 12a of the adhesive layer 12. And, the maximum value (i.e., diameter) of the width (W ₁₃ ) of the intermediate layer 13 and the maximum value (i.e., diameter) of the width (W ₁₄ ) of the film adhesive 14 are both the pressure-sensitive adhesive layer 12. is smaller than the maximum value of the width of and the maximum value of the width of the base material 11. Therefore, in the die bonding sheet 101, a part of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film adhesive 14. The release film 15 is laminated in direct contact with the area on the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film adhesive 14 are not laminated, In the state in which the release film 15 is removed, this area is exposed (hereinafter, in this specification, this area may be referred to as a “non-laminated area”).

On the other hand, in the die bonding sheet 101 provided with the release film 15, the area of the adhesive layer 12 that is not covered by the middle layer 13 and the film adhesive 14 is as shown here. , there may be a region where the release film 15 is not laminated.

The die bonding sheet 101 is in a state where the film adhesive 14 is not cut and is affixed to the above-described semiconductor chip, etc., and a part of the non-laminated area of the adhesive layer 12 is used as a ring frame for fixing a semiconductor wafer, etc. It can be fixed by attaching it to a jig. Therefore, there is no need to separately form a jig adhesive layer on the die bonding sheet 101 for fixing the die bonding sheet 101 to the jig. And, since there is no need to form an adhesive layer for a jig, the die bonding sheet 101 can be manufactured inexpensively and efficiently.

In this way, the die bonding sheet 101 exhibits an advantageous effect by not providing the jig adhesive layer, but may be provided with the jig adhesive layer. In this case, the jig adhesive layer is formed on the surface of one layer constituting the die bonding sheet 101, in an area near the periphery. Examples of such areas include areas not covered by the intermediate layer 13 and the film adhesive 14 on the first surface 12a of the adhesive layer 12.

The adhesive layer for a jig may be a known one. For example, it may be a single-layer structure containing an adhesive component, or it may be a multi-layer structure in which layers containing an adhesive component are laminated on both sides of a sheet serving as a core material.

In addition, as described later, when performing so-called expand, which is stretching the die bonding sheet 101 in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12), Since the non-laminated area exists on the first surface 12a of the adhesive layer 12, the die bonding sheet 101 can be easily expanded. And not only can the film adhesive 14 be easily cut, but peeling of the intermediate layer 13 and the film adhesive 14 from the adhesive layer 12 is also suppressed.

As described later, the die bonding sheet 101 has a value of [tensile elasticity modulus Ei' of the intermediate layer 13 at 0°C]/[tensile elasticity modulus Eb' of the base material 11 at 0°C] of 0.5 or less. satisfies the condition.

In the die bonding sheet 101, a test piece with a size of 4.5 mm × 15 mm made from the base material 11 was subjected to thermomechanical analysis (in this specification, sometimes referred to as “TMA”). , it is desirable to have the characteristics shown below.

That is, first, using a thermomechanical analysis device, the load is set to 2g, TMA is performed on the test piece without changing its temperature, and the displacement amount X ₀ of the test piece when the temperature is 23°C is measured. X ₀ is usually 0 (zero) or a value close to 0.

Next, TMA was continued, and the test _piece after measuring Measure the maximum _value X ₁ is usually the amount of displacement when the temperature of the test piece is 70°C. Additionally, the condition X ₁ ≥X ₀ is usually satisfied.

Next, TMA is continued, and _the test _piece after measuring X ₂ is usually the amount of displacement when the temperature of the test piece ceases to fluctuate due to cooling (in other words, becomes the minimum).

Since X ₀ , X ₁ , and X ₂ are measured continuously by a series of TMA, their measurement directions are all the same. Additionally, the load applied to the test piece is a constant value.

In the die bonding sheet 101, using X ₀ and X ₁ obtained in this way, Equation (1):

(X ₁ -X ₀ )/15×100

It is preferable that the rate of change of the displacement of the test piece upon heating, calculated as 0 to 2%.

Additionally, using X ₁ and X ₂ obtained in this way, equation (2):

(X ₂ -X ₁ )/15×100

It is preferable that the rate of change of the displacement of the test piece calculated as -2 to 0% during cooling.

Additionally, using X ₂ and X ₀ obtained in this way, equation (3):

(X ₂ -X ₀ )/15×100

It is preferable that the overall change rate of the displacement of the test piece, calculated as -2 to 1%.

The die bonding sheet of this embodiment is not limited to that shown in FIGS. 1 and 2, and some configurations of those shown in FIGS. 1 and 2 may be changed, deleted, or changed within a range that does not impair the effect of the present invention. It may be something added.

For example, the die bonding sheet of this embodiment may be provided with other layers that do not correspond to any of the base material, the adhesive layer, the intermediate layer, the film adhesive, the release film, and the jig adhesive layer. . However, as shown in FIG. 1, the die bonding sheet of the present invention has an adhesive layer in direct contact with the substrate, an intermediate layer in direct contact with the adhesive layer, and a film-type adhesive in direct contact with the intermediate layer. It is desirable to have it in perfect condition.

For example, in the die bonding sheet of this embodiment, the planar shape of the middle layer and the film adhesive may be shapes other than a circular shape, and the planar shapes of the middle layer and the film adhesive may be the same or different from each other. In addition, both the area of the first surface of the intermediate layer and the area of the first surface of the film adhesive are preferably smaller than the area of the surface of the substrate-side layer (for example, the first surface of the pressure-sensitive adhesive layer), They may be the same or different from each other. In addition, the positions of the outer periphery of the intermediate layer and the film adhesive may or may not all coincide in these radial directions.

Next, each layer constituting the die bonding sheet of the present invention will be described in more detail.

○Description

The substrate is in the form of a sheet or film.

The constituent materials of the substrate are preferably various resins, and specifically, for example, polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE, etc.)), polypropylene (PP), Polybutene, polybutadiene, polymethylpentene, styrene·ethylenebutylene·styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, poly Urethane acrylate, polyimide (PI), ionomer resin, ethylene/(meth)acrylic acid copolymer, ethylene/(meth)acrylic acid ester copolymer, ethylene/(meth)acrylic acid copolymer, and ethylene/(meth)acrylic acid ester copolymer. Other than the polymer, examples include ethylene copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated product, modified product, crosslinked product, or copolymer of any of these resins.

Meanwhile, in this specification, “(meth)acrylic acid” is a concept that includes both “acrylic acid” and “methacrylic acid.” The same applies to terms similar to (meth)acrylic acid, for example, “(meth)acrylate” is a concept that includes both “acrylate” and “methacrylate”, and “(meth)acryloyl group” " is a concept that includes both "acryloyl group" and "methacryloyl group".

The resin constituting the base material may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In order to make it easier to control the rate of change upon heating, the rate of change upon cooling, and the overall rate of change, the material constituting the base material is preferably polyethylene, and more preferably low-density polyethylene (LDPE).

The base material may be composed of one layer (single layer) or may be composed of two or more layers. When the base material consists of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited as long as it does not impair the effect of the present invention.

Meanwhile, in this specification, it is not limited to the case of the description, and “a plurality of layers may be the same or different from each other” means “all layers may be the same, all layers may be different, or only some layers may be the same.” means, and further, “the plurality of layers are different from each other” means “at least one of the constituent materials and thickness of each layer is different from each other.”

The thickness of the base material can be appropriately selected depending on the purpose, but is preferably 50 to 300 μm, and more preferably 60 to 150 μm. When the thickness of the base material is more than the above lower limit, the structure of the base material becomes more stable. When the thickness of the base material is below the above upper limit, the cutability of the film adhesive further improves when the die bonding sheet is expanded. Additionally, when expanding the die bonding sheet after cutting the film adhesive (in other words, expanding the laminated sheet), the effect of maintaining the kerf width sufficiently wide and with high uniformity is further enhanced.

Here, the “thickness of the base material” means the thickness of the entire base material, and for example, the thickness of a base material consisting of multiple layers means the total thickness of all layers constituting the base material.

The substrate is roughened by sandblasting, solvent treatment, embossing, etc. to improve adhesion to other layers, such as an adhesive layer, formed thereon; Oxidation treatments such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone/ultraviolet irradiation treatment, flame treatment, chromic acid treatment, and hot air treatment; etc. may be applied to the surface.

Additionally, the surface of the substrate may be treated with a primer.

Additionally, the substrate may include an antistatic coat layer; A layer that prevents the substrate from adhering to another sheet or the substrate to the suction table when the die bonding sheets are overlapped and stored; You can have your back.

In addition to the main constituent materials such as the above resins, the base material may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

A film or sheet made of resin as a constituent material has anisotropy depending on its production method. For example, a film or sheet manufactured by molding a resin usually has characteristics in the direction in which the resin travels during molding (Machine Direction) and the direction perpendicular to the direction of travel of the resin (Transverse Direction). This may vary, and this is a well-known fact. In this specification, the direction in which the above-mentioned resin advances may be referred to as “MD,” and the direction perpendicular to the direction of resin advancement may be referred to as “TD.”

MD can be said to be a direction parallel to the flow of the film or sheet during processing of the film or sheet, and TD can be said to be a direction perpendicular to the flow of the film or sheet. When a film or sheet is stretched, MD is the stretching direction of the film or sheet, and TD is a direction orthogonal to the stretching direction of the film or sheet. MD and TD of each layer can be distinguished from each other by optical analysis, such as analysis of X-ray two-dimensional diffraction images, for example.

In this embodiment, a base material, an intermediate layer, an adhesive layer, a film adhesive, etc. are also included, and a film or sheet manufactured by molding a resin may have MD and TD.

In the die bonding sheet, the MD of the base material (in the case of the die bonding sheet 101 shown in FIG. 1, the base material 11) and the intermediate layer described later (in the case of the die bonding sheet 101 shown in FIG. 1, It is desirable that the MD of the middle layer (13) matches. In other words, in the die bonding sheet, it is preferable that the TD of the base material and the TD of the intermediate layer coincide. The die bonding sheet in which the base material and the intermediate layer are arranged in this way has a more uniform expandability regardless of the direction. And, by using such a die bonding sheet, the cutting properties of the film adhesive by expansion are further improved, and also, when the film adhesive is cut, the area between the semiconductor chips, so-called cuffs, is formed more stably, The uniformity of the area width (i.e., kerf width) also becomes higher. In addition, by increasing the uniformity of the kerf width in this way, the effect of suppressing the occurrence of process defects when picking up a semiconductor chip on which the film adhesive described later is formed is significantly increased.

＜Rate of change upon heating of the displacement of the test piece produced from the base material＞

The rate of change upon heating of the test piece made from the base material (in the case of the die bonding sheet 101 shown in FIG. 1, the base material 11) may be, for example, 0 to 3%, but as previously explained, 0 ~2% is preferable, for example, it may be any of 0-1.6%, 0-1.2%, and 0-0.9%, and may be any of 0.2-2%, 0.4-2%, and 0.6-2%. It may be any one of 0.2 to 1.6%, 0.4 to 1.2%, and 0.6 to 0.9%.

The rate of change during heating of the test piece may be the same or different between two or more measurement directions. Here, “two or more measurement directions of change rate upon heating” refers to two or more different directions among directions parallel to the first surface of the test piece (corresponding to the first surface of the substrate). For example, when a test piece has MD and TD, the rate of change during heating in the MD of the test piece and the rate of change during heating in the TD of the test piece may be the same or different from each other.

In this embodiment, the rate of change during heating may be, for example, 0 to 3%, and is preferably 0 to 2% in any measurement direction of the test piece. For example, when the test piece has MD and TD, the rate of change upon heating may be, for example, 0 to 3%, preferably 0 to 2%, in either MD or TD. For one or both sides, it may be any one of the 11 numerical ranges illustrated above. In this case, the combination of the numerical range of the heating change rate in MD and the numerical range of the heating change rate in TD is arbitrary.

＜Rate of change during cooling of the displacement of the test piece produced from the base material＞

As explained above, the rate of change during cooling of the test piece made from the base material (in the case of the die bonding sheet 101 shown in FIG. 1, the base material 11) is preferably -2 to 0%, for example. , -2 to -0.4%, -2 to -0.8%, -2 to -1.2%, and -2 to -1.6%.

The rate of change of the test piece during cooling may be the same or different between two or more measurement directions. Here, “two or more measurement directions of change rate during cooling” is the same as “two or more measurement directions of change rate during heating” described above. For example, when a test piece has MD and TD, the rate of change in the MD of the test piece upon standing cooling and the rate of change during standing cooling in the TD of the test piece may be the same or different from each other.

In this embodiment, the rate of change during cooling is preferably -2 to 0% in any measurement direction of the test piece. For example, when the test piece has MD and TD, the rate of change during cooling is preferably -2 to 0% in either MD or TD, and in either or both MD and TD, the rate of change during cooling is as previously exemplified. It can be any one of four numerical ranges. In this case, the combination of the numerical range of the change rate during standing cooling in MD and the numerical range of the changing rate during standing cooling in TD is arbitrary.

＜Comprehensive rate of change in displacement of test specimens produced from the base material＞

The overall rate of change of the test piece produced from the base material (in the case of the die bonding sheet 101 shown in FIG. 1, the base material 11) may be, for example, -2 to 1.8%, but as previously explained - 2 to 1% is preferable, for example, it may be any one of -2 to 0.6%, -2 to 0.3%, -2 to 0%, -2 to -0.3%, and -2 to -0.6%, It may be any one of -1.8 to 1%, -1.6 to 1%, and -1.4 to 1%, -1.8 to 0.6%, -1.8 to 0.3%, -1.8 to 0%, -1.6 to -0.3%, and It may be any one of -1.4 to -0.6%.

Among these, the overall change rate of the test piece is more preferably -2 to 0%.

The overall rate of change of the test piece may be the same or different between two or more measurement directions. Here, “two or more measurement directions of the comprehensive change rate” is the same as the above-mentioned “two or more measurement directions of the change rate during heating.” For example, when a test piece has MD and TD, the overall rate of change in the MD of the test piece and the overall rate of change in the TD of the test piece may be the same or different from each other.

In this embodiment, the overall rate of change may be, for example, -2 to 1.8%, and is preferably -2 to 1% in any measurement direction of the test piece. For example, when the test piece has MD and TD, the overall rate of change may be, for example, -2 to 1.8%, preferably -2 to 1%, in both MD and TD. On either or both sides of TD, it can be any one of the 15 numerical ranges illustrated above. In this case, the combination of the numerical range of the comprehensive change rate in MD and the numerical range of the comprehensive change rate in TD is arbitrary.

In the test piece made from the base material, the rate of change when heated is one of the 11 numerical ranges described above, the rate of change when left to cool is one of the five numerical ranges described above, and the overall rate of change is one of the 5 numerical ranges described above. Any one of 15 numerical ranges is desirable.

For such a test piece, for example, the rate of change upon heating in either or both MD and TD is 0.6 to 0.9%, and the rate of change during cooling in either or both MD and TD is - It is 2 to -1.6%, and the overall change rate in either or both MD and TD is -1.4 to -0.6%. However, this is an example of the above test piece.

The thickness of the test piece that is the object of measurement of the change rate upon heating, change rate upon cooling, and overall change rate is not particularly limited, and may be any thickness that allows these measurements to be performed with high precision. For example, the thickness of the test piece may be 10 to 200 μm.

The change rate upon heating, change rate upon cooling, and overall change rate of the test piece produced from the base material can be adjusted by adjusting the type and content of the components contained in the base material, such as resin.

＜Tensile modulus Eb' of test specimens produced from the base material＞

For the test piece with a width of 15 mm and a length exceeding 100 mm produced from the above substrate (in the case of the die bonding sheet 101 shown in FIG. 1, the substrate 11), the distance between chucks was set to 100 mm. When the temperature was set to 0°C and a tensile test was performed using Tensilon to pull at a tensile speed of 200 mm/min, the tensile modulus Eb' of the test piece at 0°C in the elastic deformation region was measured. , Eb' may be, for example, any one of 10 to 200 MPa, 50 to 150 MPa, and 70 to 120 MPa. When Eb' is in this range, adjustment of the tensile modulus ratio Ei'/Eb' becomes easier. Additionally, when Eb' is 50 MPa or more, attachment of the die bonding sheet to the semiconductor wafer becomes easier.

Cutting of the film adhesive by expanding the die bonding sheet is preferably performed at a temperature of 0° C. or its vicinity because the cutting properties improve. For this reason, in the die bonding sheet, the tensile modulus Eb' of the test piece made from the base material is defined as the value at 0°C. In this embodiment, important physical properties that are significantly related to the expandability of the die bonding sheet are defined under the conditions of the temperature at or near the temperature at which expansion is actually performed.

Eb' of the test piece may be the same or different between two or more measurement directions. Here, “two or more measurement directions of Eb'” refers to two or more different directions among directions parallel to the first surface of the test piece (corresponding to the first surface of the substrate). For example, when a test piece has MD and TD, Eb' in the MD of the test piece and Eb' in the TD of the test piece may be the same or different from each other.

In this embodiment, the tensile modulus Eb' may be, for example, any one of the three numerical ranges exemplified above in any measurement direction of the test piece. For example, when the test piece has MD and TD, Eb' may be any one of the three numerical ranges exemplified above in either or both MD and TD. In this case, the combination of the numerical range of Eb' in MD and the numerical range of Eb' in TD is arbitrary.

The thickness of the test piece that is the object of measurement of the tensile modulus Eb' is not particularly limited, and may be any thickness that allows these measurements to be performed with high precision. For example, the thickness of the test piece may be 10 to 200 μm.

Eb' of the test piece produced from the base material can be adjusted by adjusting the type and content of the components contained in the base material, such as resin.

The optical properties of the substrate are not particularly limited as long as they are within a range that does not impair the effect of the present invention. The substrate may be one that transmits laser light or energy rays, for example.

The base material can be manufactured by known methods. For example, a base material containing a resin (using the resin as a constituent material) can be manufactured by molding the resin or a resin composition containing the resin.

＜Surface resistivity＞

The surface resistivity of the surface of the die bonding sheet located on the side opposite to the adhesive layer side of the substrate may be 1.0×10 ¹¹ Ω/□ or less.

As will be described in detail later, by using a substrate with an antistatic layer or an antistatic substrate as the substrate, the surface resistivity on the side of the substrate opposite to the adhesive layer side is 1.0 × 10 ¹¹ Ω/□ or less. can do.

The surface of the substrate on which the antistatic layer is formed, located on the opposite side from the adhesive layer side, is sometimes referred to as the “outermost layer of the die bonding sheet.” Additionally, the surface located on the opposite side to the adhesive layer side of the antistatic base material may be referred to as the “outermost layer of the die bonding sheet.”

○Adhesive layer

The adhesive layer is in a sheet or film form and contains an adhesive.

The adhesive layer can be formed using an adhesive composition containing the above adhesive. For example, the adhesive layer can be formed in the target area by coating the adhesive composition on the surface on which the adhesive layer is to be formed and drying it as necessary.

Coating of the adhesive composition may be performed by a known method, for example, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater, mayor bar. Methods include using various coaters such as coaters and kiss coaters.

Drying conditions for the adhesive composition are not particularly limited, but if the adhesive composition contains a solvent described later, it is preferable to heat dry the adhesive composition. In this case, for example, the adhesive composition is dried under conditions of 10 seconds to 5 minutes at 70 to 130°C. Drying is preferred.

Examples of the adhesive include adhesive resins such as acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, polycarbonate, and ester resin, and acrylic resin is preferred.

Meanwhile, in this specification, “adhesive resin” includes both adhesive resin and adhesive resin. For example, the adhesive resins include not only those that have adhesiveness in themselves, but also resins that exhibit adhesiveness when used in combination with other components such as additives, and resins that exhibit adhesiveness in the presence of a trigger such as heat or water. etc. are also included.

The adhesive layer may be either curable or non-curable, for example, may be either energy ray curable or non-energy ray curable. The curable adhesive layer can easily adjust the physical properties before and after curing.

In this specification, “energy ray” means an electromagnetic wave or charged particle ray that has energy quantum. Examples of energy rays include ultraviolet rays, radiation, and electron beams. For example, ultraviolet rays can be irradiated by using a high-pressure mercury lamp, fusion lamp, xenon lamp, black light, or LED lamp as the ultraviolet source. Electron beams generated by an electron beam accelerator, etc. can be irradiated.

In addition, in this specification, “energy ray curability” means the property of hardening by irradiating an energy ray, and “non-energy ray curability” means the property of not hardening even when irradiating an energy ray.

The adhesive layer may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is specifically limited. It doesn't work.

The thickness of the adhesive layer is preferably 1 to 100 μm, more preferably 1 to 60 μm, and particularly preferably 1 to 30 μm.

Here, “thickness of the adhesive layer” means the thickness of the entire adhesive layer, and for example, the thickness of the adhesive layer consisting of multiple layers means the total thickness of all layers constituting the adhesive layer.

The optical properties of the adhesive layer are not particularly limited as long as they are within a range that does not impair the effect of the present invention. For example, the adhesive layer may be one that transmits energy rays.

Next, the adhesive composition is described.

＜＜Adhesive composition＞＞

When the pressure-sensitive adhesive layer is energy-ray-curable, the pressure-sensitive adhesive composition containing the energy-ray-curable pressure-sensitive adhesive, that is, the energy-ray-curable pressure-sensitive adhesive composition, includes, for example, non-energy-ray-curable pressure-sensitive adhesive resin (I-1a) (hereinafter referred to as “adhesive resin”). (I-1a)") and an adhesive composition (I-1) containing an energy ray curable compound; Containing energy ray curable adhesive resin (I-2a) (hereinafter sometimes abbreviated as “adhesive resin (I-2a)”) in which an unsaturated group is introduced into the side chain of non-energy ray curable adhesive resin (I-1a) Adhesive composition (I-2); Examples include the adhesive resin (I-2a) and the adhesive composition (I-3) containing the energy ray curable compound.

<Adhesive composition (I-1)>

As described above, the adhesive composition (I-1) contains a non-energy ray curable adhesive resin (I-1a) and an energy ray curable compound.

[Adhesive resin (I-1a)]

The adhesive resin (I-1a) is preferably an acrylic resin.

Examples of the acrylic resin include acrylic polymers having at least structural units derived from alkyl (meth)acrylate.

The number of structural units of the acrylic resin may be one, two or more, and in the case of two or more, their combination and ratio may be arbitrarily selected.

The adhesive composition (I-1) may contain only one type of adhesive resin (I-1a), or two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In the adhesive composition (I-1), the content ratio of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-1) is preferably 5 to 99% by mass, and is preferably 10 to 95% by mass. It is more preferable, and it is especially preferable that it is 15-90 mass %.

[Energy ray curable compound]

Examples of the energy ray-curable compound contained in the adhesive composition (I-1) include monomers or oligomers that have an energy ray polymerizable unsaturated group and can be cured by irradiation of an energy ray.

Among energy-ray curable compounds, monomers include, for example, trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, and dipentaerythritol hexa(meth)acrylate. , polyhydric (meth)acrylates such as 1,4-butylene glycol di(meth)acrylate and 1,6-hexanediol (meth)acrylate; Urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; Epoxy (meth)acrylate, etc. can be mentioned.

Among energy-ray curable compounds, examples of oligomers include oligomers formed by polymerization of the monomers exemplified above.

The energy ray-curable compound has a relatively large molecular weight, and urethane (meth)acrylate and urethane (meth)acrylate oligomer are preferred because it is difficult to reduce the storage modulus of the adhesive layer.

The energy ray-curable compound contained in the adhesive composition (I-1) may be one type, two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.

In the adhesive composition (I-1), the ratio of the content of the energy ray curable compound to the total mass of the adhesive composition (I-1) is preferably 1 to 95% by mass, and is preferably 5 to 90% by mass. It is more preferable, and it is especially preferable that it is 10 to 85 mass%.

[Cross-linking agent]

When using the above-described acrylic polymer as the adhesive resin (I-1a), which has structural units derived from functional group-containing monomers in addition to structural units derived from alkyl (meth)acrylate, the adhesive composition (I-1) is additionally It is preferred to contain a cross-linking agent.

For example, the crosslinking agent reacts with the functional group to crosslink the adhesive resins (I-1a).

Examples of the crosslinking agent include isocyanate-based crosslinking agents such as tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates (crosslinking agents having an isocyanate group); Epoxy-based crosslinking agents such as ethylene glycol glycidyl ether (crosslinking agents having a glycidyl group); Aziridine-based crosslinking agents such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine (crosslinking agents having an aziridinyl group); Metal chelate-based crosslinking agents such as aluminum chelate (crosslinking agents having a metal chelate structure); Isocyanurate-based crosslinking agents (crosslinking agents having an isocyanuric acid skeleton), etc. can be mentioned.

It is preferable that the crosslinking agent is an isocyanate-based crosslinking agent because it improves the cohesion of the adhesive and improves the adhesive strength of the adhesive layer and is easy to obtain.

The crosslinking agent contained in the adhesive composition (I-1) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

When using a crosslinking agent, in the adhesive composition (I-1), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, and 0.1 to 20 parts by mass, based on 100 parts by mass of the adhesive resin (I-1a). It is more preferable, and it is especially preferable that it is 0.3 to 15 parts by mass.

[Photopolymerization initiator]

The adhesive composition (I-1) may further contain a photopolymerization initiator. The curing reaction of the adhesive composition (I-1) containing a photopolymerization initiator sufficiently proceeds even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, etc. benzoin compounds; Acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethan-1-one; Acylphosphine oxide compounds such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; Sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; Titanocene compounds such as titanocene; Thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; 2-chloroanthraquinone, etc. can be mentioned.

In addition, examples of the photopolymerization initiator include quinone compounds such as 1-chloroanthraquinone; Photosensitizers such as amines may also be used.

The photopolymerization initiator contained in the adhesive composition (I-1) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

When using a photopolymerization initiator, in the adhesive composition (I-1), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass, and 0.03 to 10 parts by mass, based on 100 parts by mass of the energy ray curable compound. It is more preferable, and it is especially preferable that it is 0.05 to 5 parts by mass.

[Other additives]

The adhesive composition (I-1) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effect of the present invention.

Examples of the other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers, reaction retarders, and crosslinking accelerators ( and known additives such as catalysts).

On the other hand, the reaction retardant refers to, for example, an agent that prevents an undesired crosslinking reaction from proceeding in the stored pressure-sensitive adhesive composition (I-1) due to the action of a catalyst mixed in the pressure-sensitive adhesive composition (I-1). It is an ingredient to suppress. Examples of reaction retardants include those that form a chelate complex by chelating the catalyst, and more specifically, those that have two or more carbonyl groups (-C(=O)-) in one molecule. You can.

The number of other additives contained in the adhesive composition (I-1) may be one, two or more, and in the case of two or more, their combination and ratio may be selected arbitrarily.

The content of other additives in the adhesive composition (I-1) is not particularly limited and may be appropriately selected depending on the type.

[menstruum]

The adhesive composition (I-1) may contain a solvent. By containing a solvent, the adhesive composition (I-1) improves coating suitability on the surface to be coated.

The solvent is preferably an organic solvent.

<Adhesive composition (I-2)>

As described above, the adhesive composition (I-2) contains an energy ray curable adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of the non-energy ray curable adhesive resin (I-1a).

[Adhesive resin (I-2a)]

The adhesive resin (I-2a) is obtained, for example, by reacting a compound containing an unsaturated group having an energy-ray polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

The unsaturated group-containing compound is a compound that, in addition to the energy-ray polymerizable unsaturated group, has a group that can be bonded to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a).

Examples of the energy-ray polymerizable unsaturated group include (meth)acryloyl group, vinyl group (ethenyl group), allyl group (2-propenyl group), and (meth)acryloyl group is preferable. .

Examples of groups that can be bonded to functional groups in the adhesive resin (I-1a) include isocyanate groups and glycidyl groups that can bond to hydroxyl groups or amino groups, and hydroxyl and amino groups that can bond to carboxyl groups or epoxy groups.

Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

The adhesive composition (I-2) may contain only one type of adhesive resin (I-2a), or two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In the adhesive composition (I-2), the content ratio of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-2) is preferably 5 to 99% by mass, and is preferably 10 to 95% by mass. It is more preferable, and it is especially preferable that it is 10-90 mass %.

[Cross-linking agent]

For example, when using the adhesive resin (I-2a) as the acrylic polymer having the same structural unit derived from a functional group-containing monomer as that of the adhesive resin (I-1a), the adhesive composition (I-2) may further contain a cross-linking agent.

Examples of the crosslinking agent in the adhesive composition (I-2) include the same crosslinking agent as the crosslinking agent in the adhesive composition (I-1).

The crosslinking agent contained in the adhesive composition (I-2) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

When using a crosslinking agent, in the adhesive composition (I-2), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, and 0.1 to 20 parts by mass, based on 100 parts by mass of the adhesive resin (I-2a). It is more preferable, and it is especially preferable that it is 0.3 to 15 parts by mass.

[Photopolymerization initiator]

The adhesive composition (I-2) may further contain a photopolymerization initiator. The curing reaction of the adhesive composition (I-2) containing a photopolymerization initiator sufficiently proceeds even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the photopolymerization initiator in the adhesive composition (I-2) include the same photopolymerization initiator as the photopolymerization initiator in the adhesive composition (I-1).

The photopolymerization initiator contained in the adhesive composition (I-2) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

When using a photopolymerization initiator, the content of the photopolymerization initiator in the adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, and 0.03 to 10 parts by mass, based on 100 parts by mass of the adhesive resin (I-2a). It is more preferable that it is negligible, and it is especially preferable that it is 0.05 to 5 parts by mass.

[Other additives, solvents]

The adhesive composition (I-2) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effect of the present invention.

Additionally, the adhesive composition (I-2) may contain a solvent for the same purpose as the adhesive composition (I-1).

Examples of the other additives and solvents in the adhesive composition (I-2) include the same additives and solvents as the other additives and solvents in the adhesive composition (I-1). The number of other additives and solvents contained in the adhesive composition (I-2) may be one, two or more, and in the case of two or more, their combination and ratio may be selected arbitrarily.

The content of other additives and solvents in the adhesive composition (I-2) is not particularly limited and may be appropriately selected depending on the type.

<Adhesive composition (I-3)>

As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy ray curable compound.

In the adhesive composition (I-3), the content ratio of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-3) is preferably 5 to 99% by mass, and is preferably 10 to 95% by mass. It is more preferable, and it is especially preferable that it is 15-90 mass %.

[Energy ray curable compound]

The energy ray curable compound contained in the adhesive composition (I-3) includes monomers and oligomers that have an energy ray polymerizable unsaturated group and can be cured by irradiation of an energy ray, which the adhesive composition (I-1) contains. Examples include the same energy ray curable compounds.

The energy ray-curable compound contained in the adhesive composition (I-3) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In the adhesive composition (I-3), the content of the energy ray curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, based on 100 parts by mass of the adhesive resin (I-2a). It is preferable, and it is especially preferable that it is 0.05 to 100 parts by mass.

[Photopolymerization initiator]

The adhesive composition (I-3) may further contain a photopolymerization initiator. The curing reaction of the adhesive composition (I-3) containing a photopolymerization initiator sufficiently proceeds even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the photopolymerization initiator in the adhesive composition (I-3) include the same photopolymerization initiator as the photopolymerization initiator in the adhesive composition (I-1).

The photopolymerization initiator contained in the adhesive composition (I-3) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

When using a photopolymerization initiator, in the adhesive composition (I-3), the content of the photopolymerization initiator is 0.01 to 20 parts by mass with respect to 100 parts by mass of the total content of the adhesive resin (I-2a) and the energy ray curable compound. It is preferable, it is more preferable that it is 0.03-10 mass parts, and it is especially preferable that it is 0.05-5 mass parts.

[Other additives, solvents]

The adhesive composition (I-3) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effect of the present invention.

Additionally, the adhesive composition (I-3) may contain a solvent for the same purpose as the adhesive composition (I-1).

Examples of the other additives and solvents in the adhesive composition (I-3) include the same additives and solvents as the other additives and solvents in the adhesive composition (I-1). The number of other additives and solvents contained in the adhesive composition (I-3) may be one, two or more, and in the case of two or more, their combination and ratio may be selected arbitrarily.

The content of other additives and solvents in the adhesive composition (I-3) is not particularly limited and may be appropriately selected depending on the type.

<Adhesive compositions other than adhesive compositions (I-1) to (I-3)>

Up to this point, the pressure-sensitive adhesive composition (I-1), the pressure-sensitive adhesive composition (I-2), and the pressure-sensitive adhesive composition (I-3) have been mainly explained. However, what has been explained as the components contained therein covers the overall content other than these three types of pressure-sensitive adhesive compositions. It can be used similarly in an adhesive composition (in this specification, referred to as "an adhesive composition other than adhesive compositions (I-1) to (I-3)").

As adhesive compositions other than adhesive compositions (I-1) to (I-3), in addition to energy ray curable adhesive compositions, non-energy ray curable adhesive compositions may also be mentioned.

Non-energy ray-curable adhesive compositions include, for example, non-energy ray-curable adhesive resins such as acrylic resins, urethane resins, rubber-based resins, silicone resins, epoxy-based resins, polyvinyl ether, polycarbonate, and ester-based resins (I Examples include the pressure-sensitive adhesive composition (I-4) containing -1a), and it is preferred that it contains an acrylic resin.

Adhesive compositions other than adhesive compositions (I-1) to (I-3) preferably contain one or two or more types of crosslinking agents, and the content is the same as in the case of the above-mentioned adhesive composition (I-1), etc. can do.

<Adhesive composition (I-4)>

Preferred examples of the adhesive composition (I-4) include those containing the adhesive resin (I-1a) and a crosslinking agent.

[Adhesive resin (I-1a)]

Examples of the adhesive resin (I-1a) in the adhesive composition (I-4) include the same adhesive resin (I-1a) as the adhesive resin (I-1a) in the adhesive composition (I-1).

The adhesive composition (I-4) may contain only one type of adhesive resin (I-1a), or two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In the adhesive composition (I-4), the content ratio of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-4) is preferably 5 to 99% by mass, and is preferably 10 to 95% by mass. It is more preferable, and it is especially preferable that it is 15-90 mass %.

[Cross-linking agent]

When using the above-described acrylic polymer as the adhesive resin (I-1a), which has structural units derived from functional group-containing monomers in addition to structural units derived from alkyl (meth)acrylate, the adhesive composition (I-4) is additionally It is preferred to contain a cross-linking agent.

Examples of the crosslinking agent in the adhesive composition (I-4) include the same crosslinking agent as the crosslinking agent in the adhesive composition (I-1).

The crosslinking agent contained in the adhesive composition (I-4) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In the adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, based on 100 parts by mass of the adhesive resin (I-1a). It is especially preferable that it is -10 parts by mass.

[Other additives, solvents]

The adhesive composition (I-4) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effect of the present invention.

Additionally, the adhesive composition (I-4) may contain a solvent for the same purpose as the adhesive composition (I-1).

Examples of the other additives and solvents in the adhesive composition (I-4) include the same additives and solvents as the other additives and solvents in the adhesive composition (I-1). The number of other additives and solvents contained in the adhesive composition (I-4) may be one, two or more, and in the case of two or more, their combination and ratio may be selected arbitrarily.

The content of other additives and solvents in the adhesive composition (I-4) is not particularly limited and may be appropriately selected depending on the type.

＜＜Production method of adhesive composition＞＞

Adhesive compositions other than adhesive compositions (I-1) to (I-3), such as adhesive compositions (I-1) to (I-3) and adhesive composition (I-4), may be used as the adhesive and, if necessary, It is obtained by mixing each component for constituting the adhesive composition, such as components other than the adhesive.

The order of addition when mixing each component is not particularly limited, and two or more types of components may be added simultaneously.

When using a solvent, the solvent may be mixed with any of the ingredients other than the solvent and diluted in advance. Alternatively, the solvent may be mixed with these ingredients without diluting any of the ingredients other than the solvent in advance. You may use it by mixing.

The method of mixing each component at the time of mixing is not particularly limited, and includes mixing by rotating a stirrer or a stirring blade, etc.; Method of mixing using a mixer; Appropriate selection may be made from known methods, such as a method of mixing by applying ultrasonic waves.

The temperature and time at the time of addition and mixing of each component are not particularly limited as long as each compounding component does not deteriorate and may be adjusted appropriately, but the temperature is preferably 15 to 30°C.

○Middle layer

The intermediate layer is in the form of a sheet or film and contains resin.

The intermediate layer may be made of resin or may contain resin and components other than the resin.

The intermediate layer can be formed, for example, by molding the resin or the composition for forming the intermediate layer containing the resin. Additionally, the intermediate layer can be formed by applying the composition for forming the intermediate layer to the surface on which the intermediate layer is to be formed and drying it, if necessary.

The resin, which is a constituent material of the intermediate layer, is not particularly limited.

Preferred resins for the intermediate layer include, for example, ethylene vinyl acetate copolymer (EVA), polypropylene (PP), polyethylene (PE), and polyurethane acrylate (UA).

The content of the resin in the composition for forming the intermediate layer is not particularly limited and can be, for example, 80% by mass or more, 90% by mass or more, and 95% by mass or more, but these are examples.

The middle layer may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited. No.

＜Shear modulus Ei' of the test specimen made from the intermediate layer＞

For a test piece made of an intermediate layer (in the case of the die bonding sheet 101 shown in FIG. 1, the intermediate layer 13) with a width of 15 mm and a length exceeding 100 mm, the distance between chucks is set to 100 mm, When the temperature was set to 0°C and a tensile test was performed using Tensilon to pull at a tensile speed of 200 mm/min, the tensile elastic modulus Ei' of the test piece at 0°C in the elastic deformation region was measured. Ei' may be, for example, any one of 10 to 150 MPa, 10 to 100 MPa, and 10 to 50 MPa. When Ei' is in this range, adjustment of the tensile modulus ratio Ei'/Eb' becomes easier.

In the die bonding sheet, for the same reason as the case of Eb' described above, the tensile elastic modulus Ei' of the test piece made from the intermediate layer is also specified as the value at 0°C.

Ei' of the test piece may be the same or different between two or more measurement directions. Here, “two or more measurement directions of Ei'” refers to two or more different directions among directions parallel to the first surface of the test piece (corresponding to the first surface of the intermediate layer). For example, when a test piece has MD and TD, Ei' in the MD of the test piece and Ei' in the TD of the test piece may be the same or different from each other.

In this embodiment, the tensile modulus Ei' may be, for example, any one of the three numerical ranges exemplified above in any measurement direction of the test piece. For example, when the test piece has MD and TD, Ei' may be any one of the three numerical ranges exemplified above in either or both MD and TD. In this case, the combination of the numerical range of Ei' in MD and the numerical range of Ei' in TD is arbitrary.

The thickness of the test piece that is the object of measurement of the tensile modulus Ei' is not particularly limited, and may be any thickness that allows these measurements to be performed with high precision. For example, the thickness of the test piece may be 10 to 200 μm.

Ei' of the test piece produced from the intermediate layer can be adjusted by adjusting the type and content of the components contained in the intermediate layer, for example, resin.

＜Tensile modulus ratio Ei'/Eb'＞

In this embodiment, the tensile elastic modulus ratio Ei'/Eb', calculated using the tensile elastic modulus Eb' of the test piece made from the base material and the tensile elastic modulus Ei' of the test piece made from the intermediate layer, is 0.5 or less, for example. , 0.45 or less, 0.4 or less, and 0.35 or less. When the tensile modulus ratio Ei'/Eb' is below the upper limit, when the die bonding sheet expands, the kerf width is sufficiently widened in relation to the elongation of the substrate, and the film adhesive is stably applied to the outer periphery of the semiconductor chip. It can be cut (divided) accordingly.

As described above, both Eb' and Ei' may be different depending on the measurement direction of the test piece to be measured (in the case of Eb', a test piece of the substrate and in the case of Ei', a test piece of the intermediate layer). In this embodiment, Ei' and Eb' used to calculate the tensile modulus ratio Ei'/Eb' are those that reflect the arrangement direction of the base material and the intermediate layer in the die bonding sheet.

For example, the test piece of the base material and the test piece of the middle layer both have MD and TD, and in the die bonding sheet, the MD of the base material and the MD of the middle layer match (in other words, the TD of the base material and the MD of the middle layer match). In the case where TD is matched), the tensile modulus ratio Ei'/Eb' is 0.5 or less in one or both of MD and TD, for example, 0.45 or less, 0.4 or less, and 0.35 or less. It can be any one. In this case, the combination of the numerical range of Ei'/Eb' in MD and the numerical range of Ei'/Eb' in TD is arbitrary.

The lower limit of the tensile modulus ratio Ei'/Eb' is not particularly limited as long as it is greater than 0. For example, from the viewpoint of being calculated from a combination of 200 MPa, which is an example of a preferable upper limit of Eb', and 10 MPa, which is an example of a preferable lower limit of Ei', the tensile modulus ratio Ei'/Eb' may be 0.05 or more.

The tensile modulus ratio Ei'/Eb' can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned lower limit and an upper limit. For example, in one embodiment, the tensile modulus ratio Ei'/Eb' may be any one of 0.05 to 0.5, 0.05 to 0.45, 0.05 to 0.4, and 0.05 to 0.35.

And, the test piece of the base material and the test piece of the middle layer both have MD and TD, and in the die bonding sheet, the MD of the base material and the MD of the middle layer match (in other words, the TD of the base material and the TD of the middle layer). coincide), the tensile modulus ratio Ei'/Eb' is 0.5 or less in either or both MD and TD, and is 0.05 to 0.5, 0.05 to 0.45, 0.05 to 0.4, and 0.05 to 0.05. It may be any one of 0.35. In this case, the combination of the numerical range of Ei'/Eb' in MD and the numerical range of Ei'/Eb' in TD is arbitrary.

As previously explained, the maximum width of the intermediate layer is smaller than the maximum width of the adhesive layer and the maximum width of the base material.

The maximum width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum width of the middle layer may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to a semiconductor wafer whose maximum width in the direction parallel to the attachment surface of the die bonding sheet is 150 mm, a semiconductor wafer of 200 mm, or a semiconductor wafer of 300 mm. . However, in this embodiment, as described above, a die bonding sheet is attached to the semiconductor wafer after dicing. Meanwhile, “semiconductor wafer after dicing” is synonymous with “semiconductor chip group” described later.

In this specification, unless otherwise specified, “width of the middle layer” means, for example, “width in the direction parallel to the first surface of the middle layer.” For example, in the case of an intermediate layer whose planar shape is a circle, the maximum value of the width of the intermediate layer described above becomes the diameter of the circle whose planar shape is.

This is the same for semiconductor wafers. That is, “the width of the semiconductor wafer” means the above-mentioned “width of the semiconductor wafer in the direction parallel to the surface on which it is attached to the die bonding sheet.” For example, in the case of a semiconductor wafer whose planar shape is a circle, the maximum value of the width of the semiconductor wafer described above is the diameter of the circle whose planar shape is.

The maximum width of the intermediate layer of 150 to 160 mm means that it is equal to the maximum width of the semiconductor wafer of 150 mm or is larger in a range that does not exceed 10 mm.

Likewise, the maximum width of the intermediate layer of 200 to 210 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 200 mm by not exceeding 10 mm.

Likewise, the maximum width of the intermediate layer, which is 300 to 310 mm, means that it is equal to, or is larger than, the maximum width of the semiconductor wafer, which is 300 mm, within a range that does not exceed 10 mm.

That is, in this embodiment, the difference between the maximum value of the width of the intermediate layer and the maximum value of the width of the semiconductor wafer is, for example, the maximum value of the width of the semiconductor wafer is any of 150 mm, 200 mm, and 300 mm. It may be 0 to 10 mm.

When the maximum value of the width of the intermediate layer satisfies these conditions, the effect of suppressing unintended scattering of the film adhesive after cutting, which will be described later, increases when cutting the film adhesive by expanding the die bonding sheet.

The thickness of the middle layer can be appropriately selected depending on the purpose, but is preferably 20 to 150 μm, and more preferably 50 to 120 μm. When the thickness of the middle layer is more than the above lower limit, the structure of the middle layer becomes more stable. When the thickness of the intermediate layer is below the above upper limit, the cutability of the film adhesive further improves when the die bonding sheet is expanded. Additionally, when expanding the die bonding sheet after cutting the film adhesive (in other words, expanding the laminated sheet), the effect of maintaining the kerf width sufficiently wide and with high uniformity is further increased.

Here, the “thickness of the middle layer” means the thickness of the entire middle layer. For example, the thickness of the middle layer consisting of multiple layers means the total thickness of all layers constituting the middle layer.

The intermediate layer is preferably softer than the substrate. For example, an intermediate layer in which Ei' is less than Eb' (Ei'<Eb') satisfies this condition, and a more preferable intermediate layer from this point of view is one with a tensile modulus ratio Ei'/Eb' of 0.5, as described above. The middle layer below can be mentioned.

○Film type adhesive

The film adhesive has curability, preferably has thermosetting properties, and preferably has pressure-sensitive adhesiveness. A film adhesive having both thermosetting and pressure-sensitive adhesive properties can be affixed to various adherends by lightly pressing them in an uncured state. In addition, the film adhesive may be one that can be affixed to various adherends by heating and softening it. By curing, the film adhesive ultimately becomes a cured product with high impact resistance, and this cured product can maintain sufficient adhesive properties even under severe high temperature and high humidity conditions.

When the die bonding sheet is viewed from above in a plan view, the area of the film adhesive (i.e., the area of the first face) is close to the area of the semiconductor wafer before division, so that the area of the substrate (i.e., the area of the first face) is close to the area of the semiconductor wafer before division. and is preferably set smaller than the area of the adhesive layer (i.e., the area of the first surface). In such a die bonding sheet, a region that is not in contact with the film adhesive exists in a part of the first surface of the adhesive layer. Thereby, expansion of the die bonding sheet becomes easier, and since the force applied to the film adhesive at the time of expansion is not dispersed, cutting of the film adhesive becomes easier.

A film adhesive can be formed using an adhesive composition containing its constituent materials. For example, a film adhesive can be formed in the target site by coating an adhesive composition on the surface to be formed of a film adhesive and drying it as needed.

Coating of the adhesive composition can be performed in the same manner as in the case of coating of the adhesive composition described above.

Drying conditions for the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described later, it is preferable to heat dry it. In this case, for example, it is preferable to dry it under conditions of 10 seconds to 5 minutes at 70 to 130°C.

The film adhesive may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is special. It is not limited.

As explained previously, the maximum width of the film adhesive is smaller than the maximum width of the adhesive layer and the maximum width of the base material.

The maximum value of the width of the film adhesive may be the same as the maximum value of the width of the intermediate layer described above with respect to the size of the semiconductor wafer.

That is, the maximum width of the film adhesive can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum width of the film adhesive may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to a semiconductor wafer whose maximum width in the direction parallel to the attachment surface of the die bonding sheet is 150 mm, a semiconductor wafer of 200 mm, or a semiconductor wafer of 300 mm. .

In this specification, unless otherwise specified, “the width of the film adhesive” means, for example, “the width in the direction parallel to the first surface of the film adhesive.” For example, in the case of a film adhesive whose planar shape is a circle, the maximum value of the width of the film adhesive mentioned above becomes the diameter of the circle which is the said planar shape.

In addition, unless otherwise specified, the “width of the film adhesive” is not the width of the film adhesive after cutting in the manufacturing process of the semiconductor chip on which the film adhesive is formed, which will be described later, but the “width of the film adhesive before cutting (uncut).” means the width of the film-type adhesive.

The maximum value of the width of the film adhesive of 150 to 160 mm means that it is equal to the maximum value of the width of the semiconductor wafer of 150 mm or is larger in a range that does not exceed 10 mm.

The maximum value of the width of the film adhesive of 200 to 210 mm means that it is equal to the maximum value of the width of the semiconductor wafer of 200 mm or is larger in a range that does not exceed 10 mm.

Similarly, the maximum value of the width of the film adhesive of 300 to 310 mm means that it is equal to the maximum value of the width of the semiconductor wafer of 300 mm or is larger in a range that does not exceed 10 mm.

That is, in this embodiment, the difference between the maximum value of the width of the film adhesive and the maximum value of the width of the semiconductor wafer is, for example, the maximum value of the width of the semiconductor wafer is 150 mm, 200 mm, and 300 mm. Any of these may be 0 to 10 mm.

When the maximum value of the width of the film adhesive satisfies these conditions, when the film adhesive is cut by the expansion of the die bonding sheet, the effect of suppressing unintended scattering of the film adhesive after cutting, which will be described later, is achieved. It gets higher.

In this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive may be any of the numerical ranges mentioned above.

That is, as an example of the die bonding sheet of this embodiment, the maximum width of the intermediate layer and the maximum width of the film adhesive are both 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. You can hear things.

The thickness of the film adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. When the thickness of the film adhesive is more than the above lower limit, higher adhesive strength is obtained with respect to the adherend (semiconductor chip). When the thickness of the film adhesive is below the above upper limit, the cutting properties of the film adhesive by expansion can be further improved, and the amount of cut pieces derived from the film adhesive can be further reduced.

Here, “thickness of the film adhesive” means the thickness of the entire film adhesive. For example, the thickness of the film adhesive consisting of multiple layers means the total thickness of all layers constituting the film adhesive. .

Next, the adhesive composition is described.

＜＜Adhesive composition＞＞

Preferred adhesive compositions include, for example, those containing a polymer component (a) and a thermosetting component (b). Below, each component is explained.

Meanwhile, the adhesive composition shown below is a preferable example, and the adhesive composition in this embodiment is not limited to what is shown below.

[Polymer component (a)]

The polymer component (a) is a component that can be considered to have been formed through a polymerization reaction of a polymerizable compound, and provides film-forming properties, flexibility, etc. to the film adhesive, as well as adhesion to adhesive objects such as semiconductor chips (again, In other words, it is a polymer compound to improve stickability. In addition, the polymer component (a) is also a component that does not correspond to the epoxy resin (b1) and thermosetting agent (b2) described later.

The number of polymer components (a) contained in the adhesive composition and the film adhesive may be one, two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

Examples of the polymer component (a) include acrylic resin, urethane resin, phenoxy resin, silicone resin, and saturated polyester resin, with acrylic resin being preferred.

In an adhesive composition, the ratio of the content of polymer component (a) to the total content of all components other than the solvent (i.e., in a film adhesive, the content of polymer component (a) to the total mass of the film adhesive It is preferable that it is 20-75 mass %, and, as for ratio), it is more preferable that it is 30-65 mass %.

[Thermosetting component (b)]

The thermosetting component (b) has thermosetting properties and is a component for thermosetting the film adhesive.

The thermosetting component (b) consists of an epoxy resin (b1) and a thermosetting agent (b2).

The number of thermosetting components (b) contained in the adhesive composition and the film adhesive may be one, two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

·Epoxy resin (b1)

Examples of the epoxy resin (b1) include known ones, such as polyfunctional epoxy resin, biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolak epoxy resin, and dicyclopenta. Bifunctional or higher epoxy compounds such as diene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, and phenylene skeleton type epoxy resin can be mentioned.

As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group may be used. An epoxy resin having an unsaturated hydrocarbon group has higher compatibility with an acrylic resin than an epoxy resin having no unsaturated hydrocarbon group. For this reason, the reliability of a package obtained using a film adhesive improves by using an epoxy resin having an unsaturated hydrocarbon group.

The number of epoxy resins (b1) contained in the adhesive composition and the film adhesive may be one, two or more, and in the case of two or more, their combination and ratio may be selected arbitrarily.

·Heat curing agent (b2)

The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).

Examples of the thermosetting agent (b2) include compounds having two or more functional groups capable of reacting with an epoxy group in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and a group in which an acid group is anhydrized. Preferably, it is a group in which a phenolic hydroxyl group, an amino group, or an acid group is anhydrized, and phenol It is more preferable that it is a hydroxyl group or an amino group.

Among the thermosetting agents (b2), examples of the phenol-based curing agent having a phenolic hydroxyl group include polyfunctional phenol resin, biphenol, novolak-type phenol resin, dicyclopentadiene-type phenol resin, and aralkyl-type phenol resin. I can hear it.

Among the thermosetting agents (b2), examples of the amine-based curing agent having an amino group include dicyandiamide (DICY).

The thermosetting agent (b2) may have an unsaturated hydrocarbon group.

The number of thermosetting agents (b2) contained in the adhesive composition and the film adhesive may be one, two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

In adhesive compositions and film adhesives, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, with respect to 100 parts by mass of the epoxy resin (b1), e.g. For example, it may be any one of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. When the content of the thermosetting agent (b2) is more than the lower limit, curing of the film adhesive becomes more likely to proceed. When the content of the thermosetting agent (b2) is below the upper limit, the moisture absorption rate of the film adhesive is reduced, and the reliability of the package obtained using the film adhesive is further improved.

In adhesive compositions and film adhesives, the content of the thermosetting component (b) (i.e., the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is 5 parts by mass relative to 100 parts by mass of the content of the polymer component (a). It is preferably -100 parts by mass, more preferably 5-75 parts by mass, and especially preferably 5-50 parts by mass. For example, it may be any of 5-35 parts by mass and 5-20 parts by mass. When the content of the thermosetting component (b) is within this range, the peeling force between the intermediate layer and the film adhesive becomes more stable.

In order to improve the various physical properties, the film adhesive may further contain, if necessary, other components other than the polymer component (a) and the thermosetting component (b).

Other preferred components contained in the film adhesive include, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray curable resin (g), and a photopolymerization initiator. (h), general purpose additive (i), etc.

[Curing accelerator (c)]

The curing accelerator (c) is a component for controlling the curing speed of the adhesive composition.

Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5 -Imidazoles such as hydroxymethylimidazole (imidazole in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms); Organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine (phosphine in which one or more hydrogen atoms are replaced with an organic group); and tetraphenyl boron salts such as tetraphenylphosphonium tetraphenyl borate and triphenylphosphine tetraphenyl borate.

The curing accelerator (c) contained in the adhesive composition and the film adhesive may be one type, or two or more types may be used, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

When using a curing accelerator (c), in the adhesive composition and film adhesive, the content of the curing accelerator (c) is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the thermosetting component (b), and is preferably 0.1 It is more preferable that it is -5 mass parts. When the content of the curing accelerator (c) is more than the lower limit, the effect of using the curing accelerator (c) is more significantly obtained. When the content of the curing accelerator (c) is below the above upper limit, for example, the highly polar curing accelerator (c) is suppressed from moving and segregating toward the adhesive interface with the adherend in the film adhesive under high temperature and high humidity conditions. The effect increases, and the reliability of the package obtained using the film adhesive further improves.

[Filler (d)]

When the film adhesive contains the filler (d), its cutting properties by expansion are further improved. In addition, by containing the filler (d), the film adhesive becomes easy to adjust its thermal expansion coefficient, and by optimizing this thermal expansion coefficient for the object to which the film adhesive is attached, the reliability of the package obtained using the film adhesive is improved. It improves. Moreover, when the film adhesive contains the filler (d), the moisture absorption rate of the film adhesive after hardening can be reduced or the heat dissipation property can also be improved.

The filler (d) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.

Preferred inorganic fillers include, for example, powders such as silica, alumina, talc, calcium carbonate, titanium white, bengala, silicon carbide, and boron nitride; Beads made by sphericalizing these inorganic fillers; Surface modified products of these inorganic fillers; Single crystal fibers of these inorganic fillers; Glass fiber, etc. can be mentioned.

Among these, the inorganic filler is preferably silica or alumina.

The number of fillers (d) contained in the adhesive composition and the film adhesive may be one, two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

When using the filler (d), in the adhesive composition, the ratio of the content of the filler (d) to the total content of all components other than the solvent (i.e., in the film adhesive, relative to the total mass of the film adhesive) The content ratio of the filler (d) is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, and particularly preferably 20 to 60% by mass. When the ratio is within this range, the effect of using the filler (d) is more significantly obtained.

[Coupling agent (e)]

By containing the coupling agent (e), the film adhesive improves adhesion and adhesion to the adherend. Moreover, when the film adhesive contains the coupling agent (e), the water resistance of the cured product is improved without impairing heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional group of the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

The number of coupling agents (e) contained in the adhesive composition and the film adhesive may be one, two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

When using the coupling agent (e), in the adhesive composition and film adhesive, the content of the coupling agent (e) is 0.03 to 20 parts by mass based on 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b). Parts by mass are preferable, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass. When the content of the coupling agent (e) is more than the above lower limit, the effects of using the coupling agent (e), such as improvement of the dispersibility of the filler (d) in the resin and improvement of the adhesion of the film adhesive to the adherend, etc. is obtained more significantly. When the content of the coupling agent (e) is below the upper limit, the generation of outgassing is further suppressed.

[Cross-linking agent (f)]

When using as the polymer component (a) a material having functional groups such as a vinyl group, (meth)acryloyl group, amino group, hydroxyl group, carboxyl group, and isocyanate group that can be bonded to other compounds, such as the above-mentioned acrylic resin, adhesive compositions and films. The mold adhesive may contain a crosslinking agent (f). The crosslinking agent (f) is a component for crosslinking the functional group in the polymer component (a) by bonding it with another compound, and by crosslinking in this way, the initial adhesion and cohesion of the film adhesive can be adjusted.

Examples of the crosslinking agent (f) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine-based crosslinking agents (crosslinking agents having an aziridinyl group).

When using an organic polyvalent isocyanate compound as the crosslinking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the film adhesive by reaction between the crosslinking agent (f) and the polymer component (a).

The number of crosslinking agents (f) contained in the adhesive composition and the film adhesive may be one, two or more, and in the case of two or more, their combination and ratio can be arbitrarily selected.

When using a cross-linking agent (f), the content of the cross-linking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, based on 100 parts by mass of the polymer component (a). It is preferable, and it is especially preferable that it is 0.3 to 5 parts by mass. When the content of the cross-linking agent (f) is more than the lower limit, the effect of using the cross-linking agent (f) is more significantly obtained. When the content of the crosslinking agent (f) is below the upper limit, excessive use of the crosslinking agent (f) is suppressed.

[Energy Ray Curable Resin (g)]

Because the adhesive composition and the film adhesive contain energy ray curable resin (g), the film adhesive can change its characteristics by irradiation of energy rays.

The energy ray curable resin (g) is obtained by polymerizing (curing) an energy ray curable compound.

Examples of the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate-based compounds having a (meth)acryloyl group are preferable.

The energy radiation curable resin (g) contained in the adhesive composition may be one type, or two or more types may be used, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

When using energy-ray curable resin (g), in the adhesive composition, the ratio of the content of energy-ray curable resin (g) to the total mass of the adhesive composition is preferably 1 to 95% by mass, and 5 to 90% by mass. It is more preferable that it is mass %, and it is especially preferable that it is 10-85 mass %.

[Photopolymerization initiator (h)]

When the adhesive composition and the film adhesive contain the energy ray curable resin (g), they may contain a photopolymerization initiator (h) in order to efficiently proceed with the polymerization reaction of the energy ray curable resin (g).

Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, Benzoin compounds such as benzoin dimethyl ketal; Acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethan-1-one; Acylphosphine oxide compounds such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; Sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; Titanocene compounds such as titanocene; Thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; and quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone.

Additionally, examples of the photopolymerization initiator (h) include photosensitizers such as amines.

The number of photopolymerization initiators (h) contained in the adhesive composition may be one, two or more, and in the case of two or more, their combination and ratio may be selected arbitrarily.

When using a photopolymerization initiator (h), the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass, 1 to 10 parts by mass, based on 100 parts by mass of the energy ray curable resin (g). It is more preferable that it is 2 to 5 parts by mass, and it is especially preferable that it is 2 to 5 parts by mass.

[General purpose additive (i)]

The general-purpose additive (I) may be a known additive and can be selected arbitrarily depending on the purpose and is not particularly limited, but preferred additives include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), and gettering agents. etc. can be mentioned.

The general-purpose additive (i) contained in the adhesive composition and the film adhesive may be one type or two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

The content of the adhesive composition and the film adhesive is not particularly limited and may be appropriately selected depending on the purpose.

[menstruum]

The adhesive composition preferably further contains a solvent. Adhesive compositions containing solvents have improved handling properties.

The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; Alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; Ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; Amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone can be mentioned.

The solvent contained in the adhesive composition may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like because it allows the components contained in the adhesive composition to be mixed more uniformly.

The solvent content of the adhesive composition is not particularly limited and may be appropriately selected depending on the types of components other than the solvent.

＜＜Method for producing adhesive composition＞＞

The adhesive composition is obtained by mixing each component to constitute it.

The adhesive composition can be manufactured in the same manner as the adhesive composition described above, for example, except that the types of mixing components are different.

○Antistatic layer

In the die bonding sheet, any one of the layers can be used as an antistatic layer.

In this case, a preferred die bonding sheet includes, for example, the above base material, and is configured by laminating an adhesive layer, an intermediate layer, and a film adhesive in this order on the base material. An example is a die bonding sheet provided with an antistatic layer (in this specification, sometimes abbreviated as “back antistatic layer”) on the side located opposite to the adhesive layer side.

In addition, a preferred die bonding sheet includes, for example, the base material, and is configured by laminating an adhesive layer, an intermediate layer, and a film adhesive in this order on the base material, and the base material is antistatic. and a die bonding sheet having antistatic properties (in this specification, this substrate may be abbreviated as “antistatic substrate”).

In addition, a preferred die bonding sheet includes, for example, the base material, and is configured by laminating an adhesive layer, an intermediate layer, and a film adhesive in this order on the base material, and further comprising the base material as an antistatic layer. , a die bonding sheet provided with an antistatic layer (in this specification, sometimes abbreviated as “surface antistatic layer”) on the surface located on the adhesive layer side.

The antistatic layers (back antistatic layer, antistatic substrate, and surface antistatic layer) all contain an antistatic agent. Among these, a die bonding sheet provided with a back antistatic layer or an antistatic substrate is preferable.

The surface resistivity of the die bonding sheet may be 1.0×10 ¹¹ Ω/□ or less. As will be described later, when the surface resistivity is 1.0×10 ¹¹ Ω/□ or less, destruction of circuits in the semiconductor chip is suppressed.

The die bonding sheet of the present invention is attached to the back side of a semiconductor group to form a laminate composed of the die bonding sheet and the semiconductor group, and the surface of this laminate on the base material side is fixed on a dicing table.

Next, in this laminated body fixed on the dicing table, the semiconductor wafer is divided, the film adhesive is cut, and the substrate, adhesive layer, intermediate layer, cut film adhesive, and divided semiconductor wafer (i.e. , semiconductor chips) in this order to obtain a laminate (hereinafter abbreviated as “divided laminate”).

Next, the fixed state of the divided laminated body on the dicing table is released, and the laminated body is conveyed on a cleaning table and fixed on this table.

Next, the laminate fixed on the cleaning table is washed with water to wash away and remove cutting debris generated and attached during dicing in the previous process. This cutting debris originates from semiconductor wafers and film-type adhesives. Cleaning is usually performed while rotating the cleaning table.

Next, the fixed state of the divided laminate after this cleaning on the cleaning table is released, and the laminate is transported on a drying table and fixed on this table.

Next, the laminate fixed on the drying table is dried, and water attached during cleaning in the previous process is removed. Drying is usually performed while rotating the drying table.

Next, the fixed state of the divided laminated body after drying on the drying table is released, and the laminated body is conveyed to an apparatus for performing the next process, and the next process is performed. And finally, the semiconductor chip with the cut film adhesive on the back side (semiconductor chip with the film adhesive) is separated from the intermediate layer and picked up.

As described above, the divided laminate is fixed on a certain table, and after work is done, this fixed state is released and transported to the location where the next process is performed. These laminates are fixed by adsorption on any table, for example, and after the adsorption is released, they are separated from the table and transported to the next location. Usually, these tables all have a gap penetrating in the thickness direction, and when the pressure is reduced on the side of the table opposite to the side in contact with the laminate, the laminate is adsorbed and fixed on the table.

As described above, in the process of manufacturing a semiconductor chip with a film adhesive on the back using a semiconductor wafer and the die bonding sheet, the laminate is fixed on a table, and then the fixing surface on the table is fixed. Perform the operation of separating from. In the die bonding sheet, the surface resistivity of the outermost layer of the base material is ^1.0 ) is suppressed. As a result, destruction of the circuit in the semiconductor chip during separation is suppressed.

As will be described later in the examples, the surface resistivity of the die bonding sheet can be measured using a surface resistivity meter with the outermost surface layer on the base material side of the die bonding sheet as the measurement object and the applied voltage being 100 V. there is.

○Back anti-static layer

The back antistatic layer is in the form of a sheet or film and contains an antistatic agent.

The back antistatic layer may contain a resin in addition to the antistatic agent.

The back antistatic layer may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is special. It is not limited.

The thickness of the back antistatic layer is preferably 200 nm or less, more preferably 180 nm or less, and may be, for example, 100 nm or less. In a back antistatic layer with a thickness of 200 nm or less, the amount of antistatic agent used can be reduced while maintaining sufficient antistatic ability, so the cost of the die bonding sheet provided with such a back antistatic layer can be reduced. Additionally, when the thickness of the back antistatic layer is 100 nm or less, in addition to the above-described effects, the effect of minimizing variations in the characteristics of the die bonding sheet due to the provision of the back antistatic layer is also obtained. Examples of the above characteristics include expandability.

Here, “thickness of the back antistatic layer” means the thickness of the entire back antistatic layer. For example, the thickness of the back antistatic layer consisting of multiple layers means the total thickness of all layers constituting the back antistatic layer. .

The thickness of the back antistatic layer is preferably 10 nm or more, and may be, for example, any of 20 nm or more, 30 nm or more, 40 nm or more, and 65 nm or more. A back antistatic layer whose thickness is equal to or greater than the above lower limit is easier to form and has a more stable structure.

The thickness of the back antistatic layer can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned preferable lower and upper limits. For example, in one embodiment, the thickness of the back antistatic layer is preferably 10 to 200 nm, for example, 20 to 200 nm, 30 to 200 nm, 40 to 180 nm, and 65 to 100 nm. Any one of these may be used. However, these are examples of the thickness of the back antistatic layer.

The back antistatic layer may be transparent, opaque, or colored depending on the purpose.

For example, when the film adhesive has energy ray curability, it is preferable that the back antistatic layer transmits the energy ray.

For example, in order to optically inspect the film adhesive in a die bonding sheet through the back antistatic layer, it is preferable that the back antistatic layer is transparent.

＜＜Antistatic composition (VI-1))＞＞

The back antistatic layer can be formed using the antistatic composition (VI-1) containing the above antistatic agent. For example, by applying antistatic composition (VI-1) to the surface on which the back antistatic layer is to be formed and drying it as necessary, the back antistatic layer can be formed on the target area. In the antistatic composition (VI-1), the content ratio of components that do not vaporize at room temperature is usually the same as the content ratio of the components in the back antistatic layer.

A more specific method of forming the rear antistatic layer, along with the method of forming other layers, will be described in detail later.

Coating of the antistatic composition (VI-1) may be performed by a known method, for example, the same method as in the case of the adhesive composition described above may be used.

When forming a back antistatic layer on a substrate, for example, the antistatic composition (VI-1) may be applied on the substrate and dried as necessary, thereby laminating the rear antistatic layer on the substrate. In addition, when forming a back antistatic layer on the substrate, for example, antistatic composition (VI-1) is applied on the release film and dried as necessary to form a back antistatic layer on the release film. , the back antistatic layer may be laminated on the substrate by bonding the exposed surface of the back antistatic layer to one surface of the substrate. In this case, the release film can be removed at any timing during the manufacturing process or use process of the die bonding sheet.

Drying conditions for the antistatic composition (VI-1) are not particularly limited, but when the antistatic composition (VI-1) contains a solvent described later, it is preferable to heat and dry the antistatic composition (VI-1). And, the antistatic composition (VI-1) containing a solvent is preferably dried under conditions of, for example, 40 to 130°C for 10 seconds to 5 minutes.

The antistatic composition (VI-1) may contain the above resin in addition to the antistatic agent.

[Antistatic agent]

The antistatic agent may be a known conductive compound or the like, and is not particularly limited. The antistatic agent may be, for example, either a low molecular compound or a high molecular compound (in other words, an oligomer or polymer).

Among the above antistatic agents, examples of low molecular weight compounds include various ionic liquids.

Examples of the ionic liquid include known pyrimidinium salts, pyridinium salts, piperidinium salts, pyrrolidinium salts, imidazolium salts, morpholinium salts, sulfonium salts, phosphonium salts, and ammonium salts. .

Among the above antistatic agents, polymer compounds include, for example, poly(3,4-ethylenedioxythiophene)/polystyrenesulfonate (sometimes referred to as “PEDOT/PSS” in this specification), polypyrrole, and carbon. Nanotubes, etc. can be mentioned. The polypyrrole is an oligomer or polymer having a plurality of pyrrole skeletons.

The antistatic agent contained in the antistatic composition (VI-1) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In the antistatic composition (VI-1), the ratio of the content of the antistatic agent to the total content of all components other than the solvent (i.e., the content of the antistatic agent in the back antistatic layer relative to the total mass of the back antistatic layer) ratio) may be, for example, either 0.1 to 30 mass% or 0.5 to 15 mass%. When the ratio is more than the lower limit, the effect of suppressing peeling and charging of the die bonding sheet increases, and as a result, the effect of suppressing the mixing of foreign substances between the film adhesive and the semiconductor wafer increases. When the ratio is below the upper limit, the strength of the back antistatic layer becomes higher.

[profit]

The resin contained in the antistatic composition (VI-1) and the back antistatic layer may be either curable or non-curable, and if curable, may be either energy ray curable or thermosetting.

Preferred examples of the resin include those that function as a binder resin.

More specifically, examples of the resin include acrylic resin, and it is preferable that it is an energy ray-curable acrylic resin.

Examples of the acrylic resin in the antistatic composition (VI-1) and the back antistatic layer include the same acrylic resin as the acrylic resin in the adhesive layer. Examples of the energy ray-curable acrylic resin in the antistatic composition (VI-1) and the back antistatic layer include the same adhesive resin (I-2a) in the adhesive layer.

The antistatic composition (VI-1) and the back antistatic layer may contain only one type of the above resin, or two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.

In the antistatic composition (VI-1), the ratio of the content of the resin to the total content of all components other than the solvent (i.e., the ratio of the content of the resin to the total mass of the back antistatic layer in the back antistatic layer) ratio) may be, for example, any one of 30 to 99.9 mass %, 35 to 98 mass %, 60 to 98 mass %, and 85 to 98 mass %. When the ratio is above the lower limit, the strength of the back antistatic layer becomes higher. When the ratio is below the upper limit, it becomes possible to increase the content of the antistatic agent in the antistatic layer.

[Energy ray curable compound, photopolymerization initiator]

When the antistatic composition (VI-1) contains the energy ray curable resin, it may contain an energy ray curable compound.

Additionally, when the antistatic composition (VI-1) contains the energy ray-curable resin, it may contain a photopolymerization initiator in order to efficiently proceed with the polymerization reaction of the resin.

The energy ray curable compound and photopolymerization initiator contained in the antistatic composition (VI-1) include, for example, the same as the energy ray curable compound and photopolymerization initiator contained in the adhesive composition (I-1), respectively. I can hear it.

The energy ray curable compound and photopolymerization initiator contained in the antistatic composition (VI-1) may be one type or two or more types, respectively. When two or more types are used, their combination and ratio may be selected arbitrarily.

The content of the energy ray curable compound and photopolymerization initiator of the antistatic composition (VI-1) is not particularly limited and may be appropriately selected depending on the type of the resin, energy ray curable compound, or photopolymerization initiator.

[Other additives, solvents]

The antistatic composition (VI-1) may contain other additives that do not correspond to any of the above-mentioned components within a range that does not impair the effect of the present invention.

Additionally, the antistatic composition (VI-1) may contain a solvent for the same purpose as the adhesive composition (I-1) described above.

The other additives and solvents contained in the antistatic composition (VI-1) are the same as the other additives (excluding the antistatic agent) and solvents contained in the above-mentioned adhesive composition (I-1), respectively. You can hear things. In addition, the other additives contained in the antistatic composition (VI-1) include emulsifiers in addition to the above. In addition, the solvent contained in the antistatic composition (VI-1) includes, in addition to the above, other alcohols such as ethanol; Alkoxy alcohols such as 2-methoxyethanol (ethylene glycol monomethyl ether), 2-ethoxyethanol (ethylene glycol monoethyl ether), and 1-methoxy-2-propanol (propylene glycol monomethyl ether) can also be mentioned.

The number of other additives and solvents contained in the antistatic composition (VI-1) may be one, two or more, and in the case of two or more, their combination and ratio may be arbitrarily selected.

The content of other additives and solvents in the antistatic composition (VI-1) is not particularly limited and may be appropriately selected depending on the type.

<<Method for producing antistatic composition (VI-1)>>

The antistatic composition (VI-1) is obtained by mixing the antistatic agent and, if necessary, components for forming the antistatic composition (VI-1), such as components other than the antistatic agent.

The antistatic composition (VI-1) can be produced in the same manner as the adhesive composition described above, except that the mixing components are different.

○Antistatic material

The antistatic substrate is in the form of a sheet or film, has antistatic properties, and also has the same function as the substrate.

In the die bonding sheet, the antistatic substrate has the same function as the laminate of the substrate and the back antistatic layer described above, and can be placed in place of this laminate.

The antistatic substrate contains an antistatic agent and a resin, and may be the same as the substrate described above, for example, except that it further contains an antistatic agent.

The antistatic substrate may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers may be There is no particular limitation.

The thickness of the antistatic substrate may be, for example, the same as the thickness of the substrate described above. When the thickness of the antistatic base material is within this range, the flexibility of the die bonding sheet and adhesion to a semiconductor wafer or semiconductor chip are further improved.

Here, the “thickness of the antistatic base material” means the thickness of the entire antistatic base material. For example, the thickness of the antistatic base material made of multiple layers is the sum of all layers constituting the antistatic base material. It means thickness.

The antistatic substrate may be transparent, opaque, or colored depending on the purpose.

For example, when the film adhesive has energy ray curability, it is preferable that the back antistatic layer transmits the energy ray.

For example, in order to optically inspect the film adhesive in a die bonding sheet through an antistatic base material, it is preferable that the antistatic base material is transparent.

The antistatic substrate is roughened by sand blasting, solvent treatment, etc. to improve adhesion to the layer formed thereon (for example, an adhesive layer, an intermediate layer, or a film adhesive); Oxidation treatments such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone/ultraviolet irradiation treatment, flame treatment, chromic acid treatment, and hot air treatment; etc. may be applied to the surface. Additionally, the surface of the antistatic substrate may be primer-treated.

＜＜Antistatic composition (VI-2))＞＞

The antistatic substrate can be produced, for example, by molding the antistatic composition (VI-2) containing the antistatic agent and resin. The content ratio of components that do not vaporize at room temperature in the antistatic composition (VI-2) is usually the same as the content ratio of the components in the antistatic base material.

The molding of the antistatic composition (VI-2) may be performed by a known method. For example, in the production of the substrate, the molding of the resin composition can be performed by the same method.

[Antistatic agent]

The antistatic agent contained in the antistatic composition (VI-2) includes the same antistatic agent as the antistatic agent contained in the back antistatic layer.

The antistatic agent contained in the antistatic composition (VI-2) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In the antistatic composition (VI-2) and the antistatic base material, the ratio of the content of the antistatic agent to the total content of the antistatic agent and the resin is preferably 7.5% by mass or more, and more preferably 8.5% by mass or more. do. When the ratio is more than the lower limit, the effect of suppressing peeling and charging of the die bonding sheet increases, and as a result, the effect of suppressing the mixing of foreign substances between the film adhesive and the semiconductor wafer increases.

In the antistatic composition (VI-2) and the antistatic base material, the upper limit of the ratio of the content of the antistatic agent to the total content of the antistatic agent and the resin is not particularly limited. For example, in order to improve the compatibility of the antistatic agent, the above ratio is preferably 20% by mass or less.

The content ratio of the antistatic agent can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned preferable lower and upper limits. For example, in one embodiment, the ratio is preferably 7.5 to 20% by mass, and more preferably 8.5 to 20% by mass. However, these are examples of the above ratios.

[profit]

The resin contained in the antistatic composition (VI-2) and the antistatic base material includes the same resins as the resin contained in the above base material.

The antistatic composition (VI-2) and the antistatic base material may contain only one type of the above resin, or two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

In the antistatic composition (VI-2), the ratio of the content of the resin to the total content of all components other than the solvent (i.e., the ratio of the resin to the total mass of the antistatic substrate in the antistatic substrate) The content ratio is preferably 30 to 99.9 mass%, more preferably 35 to 98 mass%, further preferably 60 to 98 mass%, and particularly preferably 85 to 98 mass%. When the ratio is above the lower limit, the strength of the antistatic base material becomes higher. When the ratio is below the upper limit, it becomes possible to increase the content of the antistatic agent in the antistatic base material.

[Photopolymerization initiator]

When the antistatic composition (VI-2) contains the energy ray-curable resin, it may contain a photopolymerization initiator in order to efficiently proceed with the polymerization reaction of the resin.

Examples of the photopolymerization initiator contained in the antistatic composition (VI-2) include the same photopolymerization initiator as the photopolymerization initiator contained in the adhesive composition (I-1).

The photopolymerization initiator contained in the antistatic composition (VI-2) may be one type, two or more types, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

The content of the photopolymerization initiator in the antistatic composition (VI-2) is not particularly limited and may be appropriately selected depending on the type of the resin or photopolymerization initiator.

[Additives, solvents]

In addition to the antistatic agent, resin, and photopolymerization initiator, the antistatic composition (VI-2) contains various known additives such as fillers, colorants, antioxidants, organic lubricants, catalysts, and softeners (plasticizers) that do not correspond to any of these. It may contain.

Examples of the additives contained in the antistatic composition (VI-2) include the same additives as the other additives (excluding the antistatic agent) contained in the above-mentioned adhesive composition (I-1).

Additionally, the antistatic composition (VI-2) may contain a solvent to improve its fluidity.

Examples of the solvent contained in the antistatic composition (VI-2) include the same solvent as the solvent contained in the above-mentioned adhesive composition (I-1).

The antistatic agent and resin contained in the antistatic composition (VI-2) may be one type, two or more types, respectively, and in the case of two or more types, their combination and ratio may be selected arbitrarily.

The content of the additive and solvent in the antistatic composition (VI-2) is not particularly limited and may be appropriately selected depending on the type.

<<Method for producing antistatic composition (VI-2)>>

The antistatic composition (VI-2) is obtained by mixing the antistatic agent, the resin, and, if necessary, other components for forming the antistatic composition (VI-2).

The antistatic composition (VI-2) can be produced in the same manner as the adhesive composition described above, except that the mixing components are different.

○Surface anti-static layer

Although the surface antistatic layer is different from the rear antistatic layer in its arrangement position on the die bonding sheet, the structure itself is the same as the rear antistatic layer. For example, the surface antistatic layer can be formed using the antistatic composition (VI-1) in the same manner as the forming method of the back antistatic layer described above. Accordingly, detailed description of the surface antistatic layer is omitted.

When the die bonding sheet is provided with both a surface antistatic layer and a back antistatic layer, these surface antistatic layers and back antistatic layers may be the same or different from each other.

In one embodiment of the die bonding sheet, for example, it is provided with a base material, and a pressure-sensitive adhesive layer, an intermediate layer, and a film-type adhesive are laminated in this order on the base material,

The value of [tensile modulus of elasticity at 0°C of the intermediate layer]/[tensile modulus of elasticity of the base material at 0°C] is 0.5 or less, and the base material has an antistatic layer on one or both sides of the base material. , or, the substrate has antistatic properties, and the surface resistivity of the outermost layer on the substrate side is 1.0×10 ¹¹ Ω/□ or less.

In one embodiment of the die bonding sheet, for example, it is provided with a base material, and a pressure-sensitive adhesive layer, an intermediate layer, and a film-type adhesive are laminated in this order on the base material,

The value of [tensile modulus of elasticity at 0°C of the intermediate layer]/[tensile modulus of elasticity of the base material at 0°C] is 0.5 or less, and the base material has an antistatic layer on the side opposite to the adhesive layer side. and that the surface resistivity of the outermost layer of the substrate is 1.0×10 ¹¹ Ω/□ or less.

In one embodiment of the die bonding sheet, for example, it is provided with a base material, and a pressure-sensitive adhesive layer, an intermediate layer, and a film-type adhesive are laminated in this order on the base material,

The value of [tensile modulus of elasticity at 0°C of the intermediate layer]/[tensile modulus of elasticity of the base material at 0°C] is 0.5 or less, the base material has antistatic properties, and the surface resistivity of the outermost layer of the base material is Examples include those of 1.0×10 ¹¹ Ω/□ or less.

In one embodiment of the die bonding sheet, for example, it is provided with a base material, and a pressure-sensitive adhesive layer, an intermediate layer, and a film-type adhesive are laminated in this order on the base material,

The value of [tensile modulus of elasticity at 0°C of the intermediate layer]/[tensile modulus of elasticity of the base material at 0°C] is 0.5 or less, and the base material has an antistatic layer on the side located on the adhesive layer side, For example, the surface resistivity of the outermost layer of the substrate is 1.0×10 ¹¹ Ω/□ or less.

◇Manufacturing method of die bonding sheet

The die bonding sheet can be manufactured by stacking each of the above-described layers in a corresponding positional relationship. The method of forming each layer is the same as described above.

The die bonding sheet can be manufactured, for example, by preparing a base material, an adhesive layer, an intermediate layer, and a film-type adhesive in advance, and bonding and laminating them in the order of the base material, an adhesive layer, an intermediate layer, and a film-type adhesive. there is. At this time, if necessary, the arrangement direction of the base material and the middle layer is adjusted so that the MD or TD of the base material and the middle layer is in the desired direction.

In addition, the die bonding sheet can be manufactured by pre-fabricating two or more types of intermediate laminates, each of which is composed of a plurality of layers, and bonding these intermediate laminates together. The configuration of the intermediate laminate can be selected arbitrarily as appropriate. For example, a first intermediate laminate having a structure in which a base material and an adhesive layer are laminated, and a second intermediate laminate having a structure in which an intermediate layer and a film-type adhesive are laminated are prepared in advance, and the adhesive in the first intermediate laminate is prepared in advance. A die bonding sheet can be manufactured by bonding the layers and the intermediate layer in the second intermediate laminate. However, this manufacturing method is an example.

When manufacturing a die bonding sheet with a release film on a film adhesive, for example, a film adhesive is produced on the release film, and while maintaining this state, the remaining layers are laminated to form a die bonding sheet. A bonding sheet may be produced, or a die bonding sheet may be produced by laminating a release film on the film adhesive after all the base material, adhesive layer, intermediate layer, and film adhesive are laminated. The release film can be removed at any necessary stage until the die bonding sheet is used.

A die bonding sheet comprising layers other than the base material, the adhesive layer, the intermediate layer, the film adhesive, and the release film is manufactured by adding the step of forming and laminating these other layers at an appropriate timing in the above-described manufacturing method. It can be manufactured by doing this.

◇How to use die bonding sheets (method for manufacturing semiconductor chips with film-type adhesive)

The die bonding sheet can be used in the manufacturing process of a semiconductor device, when manufacturing a semiconductor chip on which a film-type adhesive is formed.

Hereinafter, with reference to the drawings, a method of using the die bonding sheet (a method of manufacturing a semiconductor chip with a film-like adhesive) will be described in detail.

Figure 3 is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor chip for which a die bonding sheet is used. Figure 4 is a cross-sectional view schematically illustrating a method of using the die bonding sheet. Here, the die bonding sheet 101 shown in FIG. 1 is taken as an example, and a method of using it is explained.

First, prior to using the die bonding sheet 101, as shown in FIG. 3A, a semiconductor wafer 9' is prepared, and a back grind tape (surface protection tape) 8 is applied to the circuit formation surface 9a' of the semiconductor wafer 9'. Attach it.

In FIG. 3, symbol W _9' indicates the width of the semiconductor wafer 9'.

Next, laser light (not shown) is irradiated to focus on a focus set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9', as shown in FIG. 3B. form

The laser light is preferably irradiated to the semiconductor wafer 9' from the back side 9b' of the semiconductor wafer 9'.

Next, the back surface 9b' of the semiconductor wafer 9' is ground using a grinder (not shown). As a result, the thickness of the semiconductor wafer 9' is adjusted to the target value, and the modified layer 90' is formed by using the grinding force applied to the semiconductor wafer 9' at this time. In each area, the semiconductor wafer 9' is divided to form a plurality of semiconductor chips 9, as shown in FIG. 3C.

In FIG. 3, symbol 9a represents the circuit formation surface of the semiconductor chip 9 and corresponds to the circuit formation surface 9a' of the semiconductor wafer 9'. In addition, symbol 9b represents the back side of the semiconductor chip 9, and corresponds to the back side 9b' after grinding of the semiconductor wafer 9'.

As a result, the semiconductor chip 9, which is the object of use of the die bonding sheet 101, is obtained. More specifically, through this process, a semiconductor chip group 901 in which a plurality of semiconductor chips 9 are aligned and fixed on the back grind tape 8 is obtained.

When the semiconductor chip group 901 is viewed from above in a planar view, the planar shape formed by connecting the outermost portions of the semiconductor chip group 901 (in this specification, this planar shape is simply referred to as the “planar shape of the semiconductor chip group”) (sometimes referred to as ) is completely the same as the planar shape when the semiconductor wafer 9' is viewed in the same plane, or the difference between these planar shapes is so slight that it can be ignored, and the semiconductor chip group 901 It can be said that the planar shape of is substantially the same as the planar shape of the semiconductor wafer 9'.

Therefore, the width of the planar shape of the semiconductor chip group 901 can be considered equal to the width W _9' of the semiconductor wafer 9', as shown in FIG. 3C. And, the maximum value of the width of the planar shape of the semiconductor chip group 901 can be considered to be equal to the maximum value of the width W _9' of the semiconductor wafer 9'.

Meanwhile, here, a case where the semiconductor chip 9 can be formed as intended from the semiconductor wafer 9' is shown, but depending on the conditions at the time of grinding the back surface 9b' of the semiconductor wafer 9', , there are cases where division into semiconductor chips 9 is not performed in some areas of the semiconductor wafer 9'.

Next, a semiconductor chip with a film adhesive is manufactured using the semiconductor chip 9 (semiconductor chip group 901) obtained above.

First, as shown in FIG. 4A, while heating one die bonding sheet 101 with the release film 15 removed, the film adhesive 14 therein is applied to all semiconductor chips in the semiconductor chip group 901 ( Attach it to the back side (9b) of 9).

In this process, by using the die bonding sheet 101, the die bonding sheet 101 can be stably attached to the semiconductor chip 9 with the film adhesive 14 while being heated.

The maximum value of the width (W ₁₃ ) of the intermediate layer 13 in the die bonding sheet 101 and the maximum value of the width (W ₁₄ ) of the film adhesive 14 are both the width (W) of the semiconductor wafer 9'_9' ) (in other words, the width of the semiconductor chip group 901) is completely equal to the maximum value, or, although it is not the same, the error is slight and is approximately equal.

More specifically, the maximum value of W _9' is preferably 0.88 to 1.12 times the maximum value of W ₁₃ and W ₁₄ , more preferably 0.9 to 1.1 times, and especially preferably 0.92 to 1.08 times. do. That is, the values of [maximum value of W _9' ]/[maximum value of W ₁₃ ] and [maximum value of W _9' ]/[maximum value of W ₁₄ ] are preferably both 0.88 to 1.12, It is more preferable that it is 0.9 to 1.1, and it is especially preferable that it is 0.92 to 1.08.

The difference between the maximum value of W ₁₃ and the maximum value of the width (W _9' ) ([maximum value of W ₁₃ ] - [maximum value of width (W _9' )]) is preferably 0 to 10 mm, and W The difference between the maximum value of ₁₄ and the maximum value of W _9' ([maximum value of W ₁₄ ] - [maximum value of width (W _9' )]) is preferably 0 to 10 mm.

The heating temperature at the time of sticking the die bonding sheet 101 is not particularly limited, but is preferably 40 to 70°C because the heat sticking stability of the die bonding sheet 101 is further improved.

Next, the back grind tape 8 is removed from this fixed semiconductor chip group. Then, as shown in FIG. 4B, the die bonding sheet 101 is cooled and stretched in a direction parallel to its surface (for example, the first surface 12a of the adhesive layer 12) to expand. do. Here, the direction of expansion of the die bonding sheet 101 is indicated by an arrow E ₁ . By expanding in this way, the film adhesive 14 is cut along the outer periphery of the semiconductor chip 9.

By this process, the semiconductor chip 9 and the semiconductor chip 914 formed with a plurality of film adhesives including the cut film adhesive 140 formed on the back surface 9b of the semiconductor chip 9 are aligned on the intermediate layer 13. A semiconductor chip group 910 in a fixed state with a film-like adhesive formed thereon is obtained.

As described above, when dividing the semiconductor wafer 9', if division into semiconductor chips 9 is not performed in some areas of the semiconductor wafer 9', this process is performed. The area is divided into semiconductor chips.

The die bonding sheet 101 is preferably expanded at a temperature of -5 to 5°C. By cooling and expanding the die bonding sheet 101 in this way, the film adhesive 14 can be cut more easily and with high precision.

Expanding of the die bonding sheet 101 can be performed by a known method. For example, of the first surface 12a of the adhesive layer 12 in the die bonding sheet 101, the area near the periphery where the middle layer 13 and the film adhesive 14 are not laminated is used as a ring frame or the like. After fixing to the jig, the entire area where the intermediate layer 13 and the film adhesive 14 of the die bonding sheet 101 are laminated is moved from the substrate 11 toward the adhesive layer 12. By pushing up from the side, the die bonding sheet 101 can be expanded.

On the other hand, in FIG. 4B, among the first surface 12a of the adhesive layer 12, the non-laminated area where the intermediate layer 13 and the film adhesive 14 are not laminated is the first surface of the intermediate layer 13 ( Although it is approximately parallel to 13a), as described above, in the state where it is expanded by pushing up the die bonding sheet 101, as the non-laminated area approaches the outer periphery of the adhesive layer 12, It includes an inclined surface whose height decreases in a direction opposite to the direction of the pushing up.

In this process, when the difference between the maximum value of the width W ₁₃ of the intermediate layer 13 and the maximum value of the width W 9 ′ of the semiconductor wafer _{9 ′} is 0 to 10 mm, the film after cutting A high effect of suppressing the non-intended scattering of the mold adhesive 140 is obtained. Here, “scattering of the film adhesive 140 after cutting for purposes other than the intended purpose” refers to the peripheral portion of the film adhesive 14 that is not originally affixed to the semiconductor wafer 9' among the film adhesive 140 after cutting (Figure 4, the description of the peripheral portion is omitted), meaning a problem in which the material originating from the surface scatters and adheres to the circuit formation surface 9a of the semiconductor chip 9.

In this process, the tensile modulus ratio Ei'/Eb' of the die bonding sheet 101 is 0.5 or less, so that the kerf width can be sufficiently widened in response to the elongation of the substrate, so the die bonding sheet can be expanded. When doing so, the film adhesive can be stably cut (split) along the outer circumference of the semiconductor chip.

Next, as shown in FIG. 4C, the laminated sheet of the base material 11, the adhesive layer 12, and the intermediate layer 13 derived from the die bonding sheet 101 is placed on the first surface 12a of the adhesive layer 12. ) is expanded in a direction parallel to the Heat the peripheral area that is not present.

Here, the direction of expansion of the laminated sheet is indicated by an arrow E ₂ . The direction of expansion of the laminated sheet is the same as the direction of expansion of the die bonding sheet 101 described above.

In addition, here, among the above-mentioned laminated sheets, the peripheral part to be heated is indicated by an arrow (H). The peripheral portion to be heated is included in the non-laminated area.

In this embodiment, after releasing the expansion of the die bonding sheet 101 at the time of cutting the film adhesive 14 mentioned above, it is preferable to expand the said laminated sheet in this process.

In this process, the laminated sheet can be expanded in the same manner as in the case of the die bonding sheet 101 described above. For example, after fixing the area near the periphery of the first surface 12a of the adhesive layer 12 in the laminated sheet to a jig where the middle layer 13 is not laminated, the middle layer 13 of the laminated sheet is The laminated sheet can be expanded by pushing up the entire laminated area from the substrate 11 side in the direction from the substrate 11 toward the adhesive layer 12.

On the other hand, in FIG. 4C, of the first surface 12a of the adhesive layer 12, the non-laminated area where the middle layer 13 and the film adhesive 14 are not laminated (the peripheral portion indicated by the arrow H) area) is substantially parallel to the first surface 13a of the intermediate layer 13. However, as described above, in the state where the laminated sheet is expanded by pushing up, the non-laminated area is As it approaches the outer periphery of the adhesive layer 12, it includes an inclined surface whose height decreases in a direction opposite to the direction of the pushing up.

In this process, by using the die bonding sheet 101, the peripheral portion is contracted, and on the laminated sheet, the distance between adjacent semiconductor chips 9, that is, the kerf width, is sufficiently wide and has high uniformity. can be maintained. For example, in this embodiment, it is possible to set the kerf width after performing this process to 10 μm or more, and it is also possible to set all kerf widths to 10 μm or more. Additionally, it is possible to set the difference between the maximum and minimum values among the plurality of kerf widths to 100 μm or less.

In this way, by maintaining the kerf width sufficiently wide and with high uniformity, the semiconductor chip on which the film adhesive is formed can be easily picked up, as will be described later.

The semiconductor chip group 910 on which the film adhesive is formed is preferably expanded at a low temperature, for example, -15 to 0°C. By expanding the semiconductor chip group 910 on which the film adhesive is formed to this temperature, the effect of maintaining the kerf width sufficiently wide and with high uniformity is further increased.

After the film adhesive 14 is cut, the semiconductor chip 914 on which the film adhesive is formed is separated from the intermediate layer 13 in the laminated sheet and picked up. At this time, if the kerf width is sufficiently wide and has high uniformity as described above, the semiconductor chip 914 on which the film adhesive is formed can be easily picked up. The semiconductor chip 914 on which the film-type adhesive is formed can be picked up by a known method.

Here, the die bonding sheet 101 shown in FIG. 1 is taken as an example and the method of using it has been explained, but other die bonding sheets according to this embodiment can also be used in the same way. In this case, if necessary, other processes may be added and used as appropriate based on the differences in the structures of this die bonding sheet and the die bonding sheet 101.

In the method for manufacturing a semiconductor chip with a film-type adhesive, a preferred embodiment includes, for example, a semiconductor chip and a film-type adhesive formed on a back surface of the semiconductor chip. A process of forming a modified layer inside the semiconductor wafer by irradiating laser light so as to focus it on a focus set inside the semiconductor wafer, and grinding the back side of the semiconductor wafer after forming the modified layer, A step of dividing the semiconductor wafer at a formation site of the modified layer by using a grinding force applied to the semiconductor wafer to obtain a semiconductor chip group in which a plurality of semiconductor chips are aligned, and the die bonding sheet A process of attaching the film-type adhesive thereto to the back surface of all the semiconductor chips in the semiconductor chip group while heating, and stretching the die bonding sheet after attaching it to the semiconductor chip group in a direction parallel to the surface while cooling. A process of cutting the film-type adhesive along the outer periphery of the semiconductor chip to obtain a group of semiconductor chips with a film-type adhesive in which a plurality of semiconductor chips with the film-type adhesive are aligned, and a semiconductor chip with the film-type adhesive formed thereon. After obtaining the chip group, the laminated sheet of the base material, adhesive layer, and intermediate layer derived from the die bonding sheet is expanded in a direction parallel to the surface of the adhesive layer, and further, while maintaining this state, the laminated sheet is expanded. A step of heating a peripheral portion of the sheet on which the semiconductor chip with the film adhesive is not placed, and after heating the peripheral portion, separating and picking up the semiconductor chip with the film adhesive from the intermediate layer in the laminated sheet. There is a process in which the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer is set to 0 to 10 mm.

Example

Hereinafter, the present invention will be described in more detail through specific examples. However, the present invention is in no way limited to the examples shown below.

＜＜Making raw materials for adhesive composition＞＞

The raw materials used for producing the adhesive composition are shown below.

[Polymer component (a)]

(a)-1: Acrylic resin (weight average molecular weight 800000, glass transition temperature 9°C) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).

[Epoxy Resin (b1)]

(b1)-1: Cresol novolac type epoxy resin with an acryloyl group added (“CNA147” manufactured by Nippon Kayaku, epoxy equivalent weight 518 g/eq, number average molecular weight 2100, unsaturated group content is equivalent to epoxy group)

[Thermal curing agent (b2)]

(b2)-1: Aralkyl type phenol resin (“Mirex XLC-4L” manufactured by Mitsui Chemicals, number average molecular weight 1100, softening point 63°C)

[Filler (d)]

(d)-1: Spherical silica (“YA050C-MJE” manufactured by Admatex, average particle diameter 50 nm, methacrylsilane treated product)

[Coupling agent (e)]

(e)-1: Silane coupling agent, 3-glycidoxypropylmethyldiethoxysilane (“KBE-402” manufactured by Shin-Etsu Silicone Co., Ltd.)

[Cross-linking agent (f)]

(f)-1: Tolylene diisocyanate-based crosslinking agent (“Coronate L” manufactured by Tosoh Corporation)

[Antistatic composition (as)]

(as)-1: A polypyrrole solution obtained by emulsifying polypyrrole with a reactive emulsifier and dissolving it in an organic solvent.

(as)-2: “UVH515” manufactured by Idemitsu Kosan Corporation

[Example 1]

＜＜Manufacture of die bonding sheets＞＞

＜Manufacture of base material＞

Using an extruder, melt low-density polyethylene (LDPE, “Sumikasen L705” manufactured by Sumitomo Chemical Co., Ltd.), extrude the melt using the T-die method, and stretch the extruded product biaxially using a cooling roller to obtain an LDPE product. A substrate (thickness of 110 μm) was obtained.

＜Production of the middle layer＞

Using an extruder, melt ethylene vinyl acetate copolymer (EVA, “Ultracen 636” manufactured by Tosoh Corporation), extrude the melt by the T-die method, and stretch the extruded product biaxially using a cooling roller. By further cutting out a portion, an intermediate layer made of EVA (thickness 80 μm) with a circular planar shape (diameter 305 mm) was obtained.

＜Production of adhesive layer＞

A non-energy radiation curable adhesive containing an acrylic resin (“Orivine BPS 6367X” manufactured by Toyochem) (100 parts by mass) as an adhesive resin (I-1a) and a crosslinker (“BXX 5640” manufactured by Toyochem) (1 part by mass) A composition was prepared.

Next, using a release film in which one side of the polyethylene terephthalate film has been subjected to a release treatment by silicone treatment, the adhesive composition obtained above is applied to the release treatment side, and dried by heating at 100° C. for 2 minutes, thereby reducing the specific energy. A pre-curable adhesive layer (thickness 10 μm) was produced.

＜Production of film-type adhesive＞

Polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), thermosetting agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass) , a thermosetting adhesive composition containing coupling agent (e)-1 (0.5 parts by mass), and crosslinking agent (f)-1 (0.5 parts by mass) was prepared.

Next, using a release film in which one side of the polyethylene terephthalate film has been subjected to a release treatment by silicone treatment, the adhesive composition obtained above is applied to the release treatment side, heated and dried at 80° C. for 2 minutes, and further By cutting out a part, a thermosetting film adhesive (thickness 20 μm) with a circular planar shape (diameter 305 mm) was produced.

＜Manufacture of die bonding sheets＞

The exposed surface of the adhesive layer obtained above on the side opposite to the side provided with the release film was bonded to one surface of the base material obtained above.

The exposed surface of the film adhesive obtained above on the side opposite to the side provided with the release film was bonded to one surface of the intermediate layer obtained above. At this time, the film adhesive and the intermediate layer were arranged concentrically.

Next, the release film is removed from the thus obtained laminate of the release film, the adhesive layer, and the base material (equivalent to the first intermediate laminate provided with the release film described above), and the exposed surface of the newly formed adhesive layer is exposed. , the peeling film, the film adhesive, and the exposed surface of the middle layer in the laminate of the middle layer (corresponding to the second intermediate laminate with a release film described above). At this time, the arrangement direction of the substrate and the middle layer was adjusted so that the MD of the substrate and the MD of the middle layer matched (in other words, the TD of the substrate and the TD of the middle layer matched). As described above, the base material (thickness 110 μm), adhesive layer (thickness 10 μm), middle layer (80 μm thickness), film adhesive (thickness 20 μm), and release film are laminated in this order in their thickness direction. A die bonding sheet equipped with a configured release film was obtained.

＜＜Manufacture of semiconductor chips with film-type adhesive＞＞

A semiconductor wafer with a circular planar shape, a diameter of 300 mm, and a thickness of 775 μm was used, and a back grind tape (“Adwill E-3100 TN” manufactured by Lintec) was attached to the circuit formation surface.

Next, a modified layer was formed inside the semiconductor wafer by irradiating laser light using a laser beam irradiation device (“DFL73161” manufactured by Disco) to focus on a focus set inside the semiconductor wafer. At this time, the focus was set so that a large number of semiconductor chips with a size of 8 mm x 8 mm were obtained from this semiconductor wafer. Additionally, the laser light was irradiated to the semiconductor wafer 9 from the back side of the semiconductor wafer.

Next, by grinding the back side of the semiconductor wafer using a grinder, the thickness of the semiconductor wafer is set to 30 μm, and by using the grinding force applied to the semiconductor wafer at this time, at the site where the modified layer is formed. , the semiconductor wafer was divided to form a plurality of semiconductor chips. As a result, a semiconductor chip group in which a plurality of semiconductor chips were aligned and fixed on the back grind tape was obtained.

Next, using a tape mounter (“Adwill RAD2500” manufactured by Lintech Co., Ltd.), one die bonding sheet obtained above is heated to 60°C, and the film adhesive therein is attached to the back side of all the semiconductor chips (semiconductor chip group). did. Next, of the adhesive layer in the die bonding sheet after being attached to the semiconductor chip group, the peripheral part included in the non-laminated area is attached to the ring frame, so that a back grind tape is provided on the circuit formation surface and a die bonding sheet is provided on the back surface. The semiconductor chip group was fixed.

Next, the back grind tape was removed from this fixed semiconductor chip group. Then, using a fully automatic die separator (“DDS2300” manufactured by Disco), the die bonding sheet is cooled in an environment of 0°C and expanded in a direction parallel to the surface to spread the film-type adhesive to the outer circumference of the semiconductor chip. was cut along. At this time, the peripheral portion of the die bonding sheet was fixed, and the entire area where the middle layer of the die bonding sheet and the film adhesive were laminated was expanded by pushing up to a height of 15 mm from the base material side.

As a result, a semiconductor chip group with a film adhesive was obtained in which a plurality of semiconductor chips with a semiconductor chip and a cut film adhesive formed on the back of the semiconductor chip were aligned and fixed on the intermediate layer.

Next, after the expansion of the above-described die bonding sheet was released, the laminated sheet composed of the base material, the adhesive layer, and the intermediate layer was expanded in a direction parallel to the first surface of the adhesive layer at room temperature. Furthermore, while maintaining this expanded state, the peripheral portion of the above-mentioned laminated sheet where the semiconductor chip with the film adhesive was not placed was heated. As a result, while shrinking the peripheral portion, the kerf width between adjacent semiconductor chips on the laminated sheet was maintained at a certain value or more.

＜＜Evaluation of substrate＞＞

＜Calculation of the rate of change of displacement upon heating, rate of change during cooling, and overall rate of change＞

Thermomechanical analysis (TMA) was performed on the substrate obtained above using a thermomechanical analysis device (“TMA4000SA” manufactured by Bruker AXS) in the procedures shown below.

That is, first, a test piece was produced by cutting the base material into a size of 4.5 mm x 15 mm.

Next, this test piece is installed in the thermomechanical analysis device, the load applied to the test piece is set to 2g, and TMA is performed without changing the temperature of the test piece, so that the displacement amount in MD when the temperature of the test piece is 23°C X ₀ was measured. The temperature increase rate is set at 20°C/min, the load is set at 2g, the test piece after measuring this displacement _amount The maximum value X ₁ of the displacement in MD of the test piece was measured. With the load set to 2g, the test _piece after measuring the _displacement was measured.

Next, using these X ₀ , X _{1 ,} and The overall rate of change was calculated.

In addition, for the TD of the test piece, the rate of change of the displacement upon heating, the rate of change upon cooling, and the overall rate of change were calculated in the same way.

The results are shown in Table 1.

＜Measurement of tensile modulus Eb'＞

A test piece with a width of 15 mm was cut from the substrate obtained above.

Next, the temperature at the installation location of the test piece of the test device was maintained at 0°C in advance, and the test piece was installed there.

Next, the distance between chucks is set to 100 mm, the temperature is set to 0°C, and the test piece is pulled using Tensilon at a tensile speed of 200 mm/min, so that the test piece at 0°C in the elastic deformation region is obtained. The tensile modulus Eb' in MD was measured.

In addition, the tensile modulus Eb' was measured in the same manner in TD of the test piece at 0°C.

The results are shown in Table 1.

＜＜Evaluation of the middle class＞＞

＜Measurement of tensile modulus Ei'＞

From the intermediate layer obtained above, a test piece with a width of 15 mm was cut out.

Next, for the test piece of this intermediate layer, the tensile modulus Ei' in MD and TD at 0°C was measured in the same manner as in the case of the test piece of the base material described above.

The results are shown in Table 1.

＜＜Calculation of tensile modulus ratio Ei'/Eb'＞＞

Using the measured values of the tensile modulus Eb' and the tensile modulus Ei' obtained above, the tensile modulus ratio Ei'/Eb' was calculated in both the MD of the base material and the middle layer and the TD of the base material and the middle layer.

The results are shown in Table 1.

＜＜Evaluation of die bonding sheets＞＞

＜Cutting properties of film-type adhesive＞

At the time of manufacturing the semiconductor chip with the above-mentioned film adhesive, the semiconductor chip group with the obtained film adhesive was observed from above the semiconductor chip side using a digital microscope ("VH-Z100" manufactured by Keyence). And, by the expansion of the die bonding sheet, the cutting lines of the plurality of film adhesives stretched in the MD of the middle layer, which would be formed when assuming that the film adhesive was cut normally, and the plurality of films stretched in the TD of the middle layer Among the cutting lines of the mold adhesive, the number of cutting lines that were not actually formed and cutting lines with incomplete formation were confirmed, and the cutting properties of the film adhesive were evaluated according to the following evaluation criteria. The results are shown in Table 1.

(Evaluation standard)

A: In reality, the total number of cutting lines of the unformed film adhesive and cutting lines of the incompletely formed film adhesive is 5 or less.

B: The total number of cutting lines of the film adhesive that is not actually formed and the cutting lines of the film adhesive that is incompletely formed is 6 or more.

＜Scattering inhibition of film adhesive＞

When evaluating the cutability of the above-mentioned film adhesive, the semiconductor chip group on which the film adhesive was formed was visually observed from above the semiconductor chip side. And on the circuit formation surface of the semiconductor chip, the presence or absence of adhesion of the film adhesive after the scattering cut was confirmed, and the scattering suppression property of the film adhesive was evaluated according to the following evaluation criteria. The results are shown in Table 1.

(Evaluation standard)

A: The number of semiconductor chips on which the film adhesive was confirmed to be attached to the circuit formation surface was 0.

B: The number of semiconductor chips on which the film adhesive is confirmed to be attached to the circuit formation surface is one or more.

＜Cuff retention＞

When manufacturing the semiconductor chip with the above-mentioned film adhesive, the laminated sheet was expanded at room temperature, the peripheral portion of the laminated sheet was heated, and then cuff retention was evaluated according to the following method.

That is, when it is assumed that the film adhesive is normally cut by the expansion of the die bonding sheet, the semiconductor chip group on which the expanded film adhesive is formed includes a plurality of cuffs stretched in the MD of the middle layer and the TD of the middle layer. The cuff is formed into a net shape by the plurality of cuffs being stretched. Among the intersection areas (in other words, orthogonal areas) of the cuff stretched in the MD of the middle layer and the cuff stretched in the TD of the middle layer, the central intersection area corresponding to approximately the center of the silicon wafer before division (in this specification, "section (sometimes referred to as “1 intersection site”) and two intersection sites located closest to the outer periphery of the silicon wafer before division and at the same position as the central intersection site (first intersection site) in the TD of the middle layer. (In this specification, they are also referred to as “second intersection site” and “fourth intersection site,” respectively), and the intersection site is located closest to the outer periphery of the silicon wafer before division and is located at the center in the MD of the intermediate layer. (In this specification, they may also be referred to as “third intersection site” and “fifth intersection site,” respectively) at the same position as the (first intersection site), a total of 5 locations, using a digital microscope. Using (“VH-Z100” manufactured by Keyence), each kerf width of the MD and TD of the intermediate layer was measured from above on the semiconductor chip side of the semiconductor chip group on which the film adhesive was formed. That is, for one intersection site, the total number of cuff width measurements was 2, one each for MD and TD, and the total number of cuff width measurements was 10 for each of the 5 intersection sites.

Figure 5 shows the measurement location of the cuff width at this time. In Fig. 5, symbol 7 represents a semiconductor chip, symbol 79a represents a cuff stretched in the MD of the middle layer, and symbol 79b represents a cuff stretched in the TD of the middle layer. When the die bonding sheet used is the one shown in FIG. 1, the first surface 13a of the intermediate layer 13 is exposed in these cuffs 79a and 79b. In addition, the symbols W _a1 , W _a2 , W _a3 , W _a4 , and W _a5 all represent the width of the kerf extending in the MD of the intermediate layer (in other words, the kerf width of the TD at the intersection), and the symbols W _b1 , W _b2 , W _b3 , W _b4 , and W _b5 all represent the width of the kerf extending in the TD of the middle layer (in other words, the kerf width in MD at the intersection). The intersection area measuring the cuff widths W _a1 and W _b1 is the first intersection area. Additionally, the intersection site for measuring the kerf widths W _a2 and W _b2 is the second intersection site, and the intersection site for measuring the kerf widths W _a4 and W _b4 is the fourth intersection site. Additionally, the intersection site for measuring the kerf widths W _a3 and W _b3 is the third intersection site, and the intersection site for measuring the kerf widths W _a5 and W _b5 is the fifth intersection site.

Meanwhile, Figure 5 is a plan view schematically showing a group of semiconductor chips on which a film adhesive is formed in order to explain the measuring point of the kerf width. Here, the case where the kerf width is constant is shown, but this is only an example. Even in a group of semiconductor chips formed with the same film adhesive, the kerf width may change depending on the position of the cuff, and for each Example and Comparative Example, even if the cuff is at the same position in a group of semiconductor chips formed with a film adhesive, Cuff width can vary.

Then, from the measured values of the ten cuff widths described above, cuff retention was evaluated according to the following evaluation criteria. The results are shown in Table 1.

(Evaluation standard)

A: All measured cuff width values are 10 μm or more, and the difference between the maximum and minimum values of the measured values is 100 μm or less.

B: The measured value of one or more cuff widths is less than 10 μm, or all of the measured cuff widths are greater than 10 μm, and the difference between the maximum and minimum values of the measured values exceeds 100 μm.

＜Surface resistivity＞

The film adhesive in the die bonding sheet was heat cured at 130°C for 2 hours.

Next, using a surface resistivity meter (“R12704 Resistivity chamber” manufactured by Advantest), the applied voltage was set to 100 V, and the surface resistivity was measured on the side of the substrate located on the opposite side to the adhesive layer side. The results are shown in the “Surface resistivity (Ω/□)” column in Table 1.

＜Semiconductor chip with film-type adhesive, lifting between intermediate layers＞

The semiconductor chip group with the film adhesive formed after the process of the fully automatic die separator (“DDS2300” manufactured by Disco) is visually observed from the substrate side (non-semiconductor chip side) to determine whether the semiconductor chip with the film adhesive is floating from the intermediate layer. I checked about it.

(Evaluation standard)

A: There is no occurrence of lifting of the semiconductor chip on which the film-type adhesive is formed.

B: Out of 100 semiconductor chips with film-type adhesive, about a few are slightly lifted.

[Example 2]

＜＜Manufacture of die bonding sheet, manufacture of semiconductor chip with film adhesive, evaluation of substrate, evaluation of intermediate layer, and evaluation of die bonding sheet＞＞

A semiconductor chip with a die bonding sheet and a film adhesive was manufactured in the same manner as in Example 1, except that the diameter of the middle layer was 310 mm instead of 305 mm, and the base material, middle layer, and die bonding sheet were evaluated. did. The results are shown in Table 1.

[Example 3]

＜＜Manufacture of die bonding sheets＞＞

＜Manufacture of base material＞

Using an extruder, polypropylene (PP, "Prime Polypro F-744NP" manufactured by Prime Polymer) is melted, the melt is extruded using the T-die method, and the extruded product is stretched biaxially using a cooling roller. , a PP base material (thickness 50 μm) was obtained.

＜＜Manufacture of semiconductor chips with film-type adhesive＞＞

A semiconductor chip with a die bonding sheet and a film adhesive was manufactured in the same manner as in Example 1, except that the PP base material obtained above was used instead of the LDPE base material.

＜＜Evaluation of substrate and evaluation of die bonding sheet＞＞

The substrate and die bonding sheet obtained above were evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Example 4]

Except that the diameter of the middle layer was 320 mm instead of 305 mm, a semiconductor chip with a die bonding sheet and a film adhesive was manufactured in the same manner as in Example 1, and the middle layer and die bonding sheet were evaluated. The results are shown in Table 1.

[Example 5]

＜＜Manufacture of die bonding sheets＞＞

＜Manufacture of base material＞

The antistatic composition (as)-1 was applied to the surface of the substrate obtained in Example 1, located on the side opposite to the adhesive layer, and dried at 100°C for 2 minutes to form a back antistatic layer with a thickness of 75 nm on the substrate. The substrate on which (AS1) was formed was prepared.

In the same manner as in Example 1, except that instead of the LDPE base material, the base material on which the back antistatic layer (AS1) obtained above was formed was used, an antistatic layer, a base material, an adhesive layer, an intermediate layer, a film adhesive, and a release film were prepared. In this order, a die bonding sheet with a release film, which was constructed by stacking these sheets in the thickness direction, was produced.

＜＜Manufacture of semiconductor chips with film-type adhesive＞＞

Using the obtained die bonding sheet, a semiconductor chip with a film adhesive was manufactured in the same manner as in Example 1.

＜＜Evaluation of substrate, evaluation of intermediate layer, and evaluation of die bonding sheet＞＞

The substrate, intermediate layer, and die bonding sheet were evaluated in the same manner as in Example 1. The results are shown in Table 2.

[Example 6]

＜Manufacture of base material＞

Instead of the antistatic composition (as)-1, the antistatic composition (as)-2 was used to prepare a substrate on which a back antistatic layer (AS2) with a thickness of 170 nm was formed.

Using this substrate, a die bonding sheet with a release film was produced in the same manner as in Example 5.

＜＜Manufacture of semiconductor chips with film-type adhesive＞＞

Using the obtained die bonding sheet, a semiconductor chip with a film adhesive was manufactured in the same manner as in Example 5.

＜＜Evaluation of substrate, evaluation of intermediate layer, and evaluation of die bonding sheet＞＞

The substrate, intermediate layer, and die bonding sheet were evaluated in the same manner as in Example 1. The results are shown in Table 2.

[Example 7]

＜＜Manufacture of die bonding sheets＞＞

＜Manufacture of antistatic substrate＞

For a composition containing a urethane acrylate resin and a photopolymerization initiator, and the ratio of the content of the photopolymerization initiator to the content of the urethane acrylate resin is 3.0% by mass, a phosphonium-based ionic liquid (ion liquid consisting of a phosphonium salt) is used as an antistatic agent. ) were mixed and stirred to obtain an energy ray-curable antistatic composition. At this time, in the antistatic composition, the ratio of the content of the antistatic agent to the total content of the antistatic agent and urethane acrylate resin was 9.0% by mass.

Next, by the fountain die method, the antistatic composition obtained above was applied onto a process film made of polyethylene terephthalate (“Lumiror T60 PET 50 T-60 Toray” manufactured by Toray Corporation, 50 μm thick product), and the film was coated with a thickness of 80 μm. formed a film of Then, using an ultraviolet irradiation device (“ECS-401GX” manufactured by iGraphics) and a high-pressure mercury lamp (“H04-L41” manufactured by iGraphics), ultraviolet curing was carried out to remove the antistatic agent and urethane acrylate resin. The formed antistatic substrate was obtained.

A die bonding sheet with a release film was produced in the same manner as in Example 1, except that the antistatic base material obtained above was used instead of the LDPE base material.

＜＜Manufacture of semiconductor chips with film-type adhesive＞＞

Using the obtained die bonding sheet, a semiconductor chip with a film adhesive was manufactured in the same manner as in Example 1.

＜＜Evaluation of substrate, evaluation of intermediate layer, and evaluation of die bonding sheet＞＞

The substrate, intermediate layer, and die bonding sheet were evaluated in the same manner as in Example 1. The results are shown in Table 2.

[Comparative Example 1]

＜＜Manufacture of die bonding sheets＞＞

＜Manufacture of base material＞

Using an extruder, melt ethylene vinyl acetate copolymer (EVA, “Ultracen 636” manufactured by Tosoh Corporation), extrude the melt by the T-die method, and stretch the extruded product biaxially using a cooling roller. A substrate made of EVA (thickness 120 μm) was obtained.

＜＜Manufacture of semiconductor chips with film-type adhesive＞＞

A semiconductor chip with a die bonding sheet and a film adhesive was manufactured in the same manner as in Example 1, except that the EVA base material obtained above was used instead of the LDPE base material.

＜＜Evaluation of substrate and evaluation of die bonding sheet＞＞

The substrate and die bonding sheet obtained above were evaluated in the same manner as in Example 1. The results are shown in Table 2.

[Comparative Example 2]

＜Production of the middle layer＞

Using an extruder, melt low-density polyethylene (LDPE, “Sumikasen L705” manufactured by Sumitomo Chemical, 50 parts by mass) and ethylene vinyl acetate copolymer (EVA, “Ultracen 636” manufactured by Tosoh Corporation, 20 parts by mass), By extruding the melt using the T-die method, stretching the extruded product biaxially using a cooling roller, and further cutting a portion, a polymer alloy of PE and EVA with a circular planar shape (diameter 305 mm) (hereinafter referred to as , referred to as “made by PE/EVA”) (thickness 70 μm) was obtained.

＜＜Manufacture of semiconductor chips with film-type adhesive＞＞

A semiconductor chip with a die bonding sheet and a film adhesive was manufactured in the same manner as in Example 1, except that the PE/EVA intermediate layer obtained above was used instead of the EVA intermediate layer.

＜＜Evaluation of intermediate layer and die bonding sheet＞＞

The intermediate layer and die bonding sheet obtained above were evaluated in the same manner as in Example 1. The results are shown in Table 2.

As is clear from the above results, in Examples 1 to 7, both the cutability and cuff holding properties of the film adhesive in the die bonding sheet were good.

In Examples 1 to 2 and 4 to 6, Eb' was 90 MPa in MD and 104 MPa in TD. Additionally, Ei' was 25 MPa in MD and 33 MPa in TD. As a result, Ei'/Eb' was 0.28 in MD and 0.32 in TD.

In Example 3, Eb' was 65 MPa in MD and 67 MPa in TD. Additionally, Ei' was 25 MPa in MD and 33 MPa in TD. As a result, Ei'/Eb' was 0.38 in MD and 0.49 in TD.

In Example 7, Eb' was 100 MPa in MD and 100 MPa in TD. Additionally, Ei' was 25 MPa in MD and 33 MPa in TD. As a result, Ei'/Eb' was 0.25 in MD and 0.33 in TD.

In Examples 1 to 2 and 4 to 6, the rate of change in the displacement of the base material (test piece) upon heating was 0.8% in MD and 0.7% in ATD. In Example 7, the rate of change in the displacement of the base material (test piece) upon heating was 0.8% in MD and 0.8% in ATD.

In Examples 1 to 2 and 4 to 6, the rate of change in the displacement of the substrate (test piece) upon cooling was -1.9% in both MD and TD. In Example 7, the rate of change in the displacement of the substrate (test piece) upon cooling was -1.8% in both MD and TD.

In Examples 1 to 2 and 4 to 6, the overall rate of change in the displacement of the base material (test piece) was -1.1% in MD and -1.2% in ATD. In Example 7, the overall rate of change in the amount of displacement of the substrate (test piece) was -1.0% in both MD and TD.

However, in Example 4, since the said difference was larger than 10 mm (it was 20 mm), the scattering suppression property of the film adhesive was poor in Example 4.

On the other hand, in Examples 1 to 3 and 5 to 7, the difference between the diameter of the intermediate layer and the diameter of the semiconductor wafer was 10 mm or less (5 to 10 mm), so the scattering suppression of the film adhesive was good.

In Example 3, the rate of change in the displacement of the substrate (test piece) upon heating was 2.9% in TD.

In Example 3, the overall rate of change in the amount of displacement of the substrate (test piece) was 1.5% in TD.

In contrast, in Comparative Examples 1 and 2, the cutability and cuff holding properties of the film adhesive in the die bonding sheet were poor.

In Comparative Example 1, Eb' was 25 MPa in MD and 33 MPa in TD. Additionally, Ei' was 25 MPa in MD and 33 MPa in TD. As a result, Ei'/Eb' was 1.00 in both MD and TD.

In Comparative Example 2, Eb' was 90 MPa in MD and 104 MPa in TD. Additionally, Ei' was 63 MPa in MD and 55 MPa in TD. As a result, Ei'/Eb' was 0.70 in MD and 0.53 in TD.

In Comparative Example 1, the rate of change in the displacement of the substrate (test piece) upon cooling was -2.8% in MD.

In Comparative Example 1, the overall rate of change in the amount of displacement of the base material (test piece) was -2.6% in MD.

In Examples 5 to 7, since a substrate with a back antistatic layer or an antistatic substrate was used as the substrate, the surface resistivity was 1.0 × 10 ¹¹ Ω/□ or less.

In contrast, in Examples 1 to 4 and Comparative Examples 1 and 2, since a substrate with a back antistatic layer or an antistatic substrate was not used as the substrate, the surface resistivity was greater than 1.0 × 10 ¹¹ Ω/□.

In Examples 1 to 4 and Comparative Examples 1 and 2, which were not provided with antistatic properties, foreign matter was removed between the table and the die bonding sheet due to static electricity, etc., in the process of the fully automatic die separator (“DDS2300” manufactured by Disco). This mixing creates a step between the part with and without the foreign matter, causing the semiconductor chip on which the film-type adhesive is formed to peel off from the middle layer, causing local chip lifting, which ultimately results in chip scattering. happened.

In contrast, in Examples 5 to 7 where antistatic properties were imparted, foreign matter was difficult to mix between the table and the die bonding sheet, and chip lifting did not occur.

The present invention can be used in the manufacture of semiconductor devices.

101… Die bonding sheet, 11… List, 12… Adhesive layer, 13... Middle layer, 14… Film adhesive, W ₁₃ … Width of the middle layer, W ₁₄ … Width of film adhesive

Claims (3)

A substrate is provided, and an adhesive layer, an intermediate layer, and a film adhesive are laminated in this order on the substrate,
A die bonding sheet wherein the value of [tensile modulus of elasticity at 0°C of the intermediate layer]/[tensile modulus of elasticity of the base material at 0°C] is 0.5 or less. According to claim 1,
A die bonding sheet wherein the maximum width of the intermediate layer is 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. A method of manufacturing a semiconductor chip formed with a semiconductor chip and a film-type adhesive comprising a film-type adhesive formed on the back side of the semiconductor chip,
A process of forming a modified layer inside the semiconductor wafer by irradiating laser light so as to focus it on a focus set inside the semiconductor wafer;
By grinding the back surface of the semiconductor wafer after forming the modified layer and using the grinding force applied to the semiconductor wafer, the semiconductor wafer is divided at the site where the modified layer is formed, forming a plurality of semiconductors. A process of obtaining a group of semiconductor chips with the chips aligned,
A step of heating the die bonding sheet of claim 1 or 2 and attaching the film adhesive thereto to the back surfaces of all semiconductor chips in the semiconductor chip group;
The die bonding sheet after being attached to the semiconductor chip group is cooled and stretched in a direction parallel to its surface to cut the film adhesive along the outer periphery of the semiconductor chip, thereby forming a semiconductor with a plurality of film adhesives. A process of obtaining a group of semiconductor chips with aligned film adhesives,
After obtaining the semiconductor chip group on which the film adhesive is formed, the laminated sheet of the base material, the adhesive layer, and the intermediate layer derived from the die bonding sheet is expanded in a direction parallel to the surface of the adhesive layer, and further in this state. A step of heating a peripheral portion of the laminated sheet on which the semiconductor chip with the film adhesive is not placed while maintaining
A step of separating and picking up the semiconductor chip on which the film adhesive is formed from the intermediate layer in the laminated sheet after heating the peripheral portion,
A method for manufacturing a semiconductor chip with a film adhesive, wherein the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer is 0 to 10 mm.