KR102657028B1 - Heat Radiation Substrate for LED Lighting - Google Patents

Abstract

The present invention is a high heat dissipation, high functionality, and high integration heat dissipation substrate applied to LED lighting. A pattern layer is formed in the via hole penetrating the upper and lower sides of the substrate, and the pattern layer on the upper surface and the lower surface are connected to each other to improve the degree of integration. , Precision is improved by giving a predetermined offset to the dry film to form the pattern layer, and stability is increased by not damaging the oxide film of the substrate by not performing a separate etching process, which is used in lighting, communication equipment, electric vehicles, and defense applications. It relates to high heat dissipation, high functionality, and highly integrated heat dissipation substrates applied to LED lighting that can be applied to industrial fields such as industrial products and advanced medical devices.

Description

{Heat Radiation Substrate for LED Lighting}

The present invention is a high heat dissipation, high functionality, and high integration heat dissipation substrate applied to LED lighting. A pattern layer is formed in the via hole penetrating the upper and lower sides of the substrate, and the pattern layer on the upper surface and the lower surface are connected to each other to improve the degree of integration. , Precision is improved by giving a predetermined offset to the dry film to form the pattern layer, and stability is increased by not damaging the oxide film of the substrate by not performing a separate etching process, which is used in lighting, communication equipment, electric vehicles, and defense applications. It relates to high heat dissipation, high functionality, and highly integrated heat dissipation substrates applied to LED lighting that can be applied to industrial fields such as industrial products and advanced medical devices.

LED is a device that utilizes the luminescence phenomenon of emitting light and heat simultaneously. It has superior energy efficiency and lifespan compared to incandescent and fluorescent lamps, and is used in various industrial fields such as indoor lighting, street lighting, mobile phones, and electronic signboards. However, only about 20% of the energy consumed by LEDs is used to emit light, and most of the remaining energy is emitted as heat. In this way, the heat generated from LED reduces the lifespan and illuminance of the device and becomes a factor causing power loss. In order to implement high-performance LED lighting, it is essential to take measures to dissipate the heat generated from LED to the outside. There is a need.

Meanwhile, conventional LED lighting is a type in which LED elements are mounted on a PCB board, and a heat sink with high thermal conductivity is attached as a means of dissipating heat generated from the board. However, LED boards with this structure have the inherent problem of increasing thickness and weight and making it difficult to miniaturize the product.

In addition, the conventional LED substrate is a single-sided layer, which has the inherent problem of making it difficult to implement products with high integration. Specifically, LED substrates applied to lighting, communication equipment, electric vehicles, defense industry products, and advanced medical devices require high heat dissipation, high functionality, and high integration performance, but the above conditions cannot be satisfied with a single-sided layer structure as in the past. There was a difficult problem.

Meanwhile, Domestic Patent No. 10-2505020, “Metal substrate for LED lighting with heat transfer medium installed and method for manufacturing the same,” forms a via hole in contact with an Al substrate and fills the via hole with lead to dissipate high heat emitted from the LED. We are launching metal substrates for LED lighting. However, in this technology, the via hole is made by drilling a predetermined space in the substrate to fill it with lead for heat dissipation. The via hole is formed to completely penetrate the top and bottom of the substrate, and a pattern layer is also formed on the inner peripheral surface of the via hole to form a pattern layer on the upper surface of the substrate. There is no disclosure regarding a configuration that allows the patterns formed on the upper and lower surfaces to be connected through via holes.

As a result, the heat generated from the LED is efficiently dissipated to the outside and at the same time, a circuit is formed on both sides of the board, which can be widely applied in fields such as lighting, communication equipment, electric vehicles, defense industry products, and advanced medical devices. There is an emerging need for research and development on double-sided heat dissipation boards for high heat dissipation, high functionality, and highly integrated LED lighting.

Domestic registered patent KR 10-2505020 B1 “Metal substrate for LED lighting with heat transfer medium installed and method of manufacturing the same”

The present invention is a high heat dissipation, high functionality, and high integration heat dissipation substrate applied to LED lighting. A pattern layer is formed in the via hole penetrating the upper and lower sides of the substrate, and the pattern layer on the upper surface and the lower surface are connected to each other to improve the degree of integration. , Precision is improved by giving a predetermined offset to the dry film to form the pattern layer, and stability is increased by not damaging the oxide film of the substrate by not performing a separate etching process, which is used in lighting, communication equipment, electric vehicles, and defense applications. The purpose is to provide high heat dissipation, high functionality, and highly integrated heat dissipation substrates applied to LED lighting that can be applied to industrial fields such as industrial products and high-tech medical devices.

In order to solve the above problems, a method of manufacturing a double-sided heat dissipation substrate for high heat dissipation, high functionality, and high integration LED lighting includes a via hole forming step of forming a plurality of via holes penetrating from one surface of the Al substrate to the other surface of the Al substrate; An Al ₂ O ₃ oxide layer forming step of anodizing the Al substrate on which the via hole is formed to form an Al ₂ O ₃ oxide layer on the Al substrate; A first dry film attachment step of attaching a first dry film for masking an area that does not correspond to a pattern to the Al substrate on which the Al ₂ O ₃ oxide layer is formed; A Ni thin film layer forming step of depositing a Ni thin film layer on the Al substrate to which the first dry film is attached; A Cu thin film layer deposition step of depositing a Cu thin film layer on the Al substrate on which the Ni thin film layer is deposited; A second dry film attachment step of attaching a second dry film for masking a narrower area than the area masked by the first dry film to the Al substrate on which the Cu thin film layer is deposited; A pattern layer forming step of performing wet electroplating to form a pattern layer in an area not masked by the second dry film; And a dry film peeling step of peeling off the first dry film and the second dry film to remove the Ni thin film layer, Cu thin film layer, and pattern layer formed in areas that do not correspond to the pattern. Provides a manufacturing method.

In one embodiment of the present invention, the double-sided heat dissipation substrate includes the Ni thin film layer forming step, Cu thin film layer deposition step, second dry film attaching step, pattern layer forming step, and dry film on each of both surfaces of the Al substrate. By performing the same peeling step, the Ni thin film layer, Cu thin film layer, and pattern layer formed in the pattern areas of each surface of both sides of the Al substrate can be connected through the inner peripheral surface of the via hole.

In one embodiment of the present invention, the Ni thin film layer forming step deposits the Ni thin film layer while vibrating the Al substrate on which the first dry film is attached, and the Cu thin film layer deposition step involves depositing the Ni thin film layer on the Al substrate on which the Ni thin film layer is deposited. The Cu thin film layer is deposited while vibrating, and the Ni thin film layer and Cu thin film layer can be formed on the inner peripheral surface of the via hole formed in the Al substrate.

In one embodiment of the present invention, the pattern area of the Al substrate to which the first dry film is attached is exposed, and the Ni thin film layer forming step deposits Ni in the area masked by the first dry film and in the area not masked. A thin film layer can be formed.

In one embodiment of the present invention, the Al substrate to which the second dry film is attached has a pattern area and an area extending from the pattern area by a predetermined length exposed, and the pattern layer is exposed to the second dry film. This may be formed in a part of the pattern area that is not masked and an area that does not correspond to the pattern.

In one embodiment of the present invention, the Al ₂ O ₃ oxide film layer forming step does not seal the pores formed in the Al ₂ O ₃ oxide film layer, and the Ni thin film layer is formed by forming the Al ₂ O 3 oxide film layer. By depositing directly on the surface of the O ₃ oxide layer, the adhesion between the Al ₂ O ₃ oxide layer and the Ni thin film layer can be improved.

In one embodiment of the present invention, the Ni thin film layer has a thickness of 0.05 to 0.015 With a thickness range of m, the Cu thin film layer has a thickness of 0.1 to 0.3 It can have a thickness range of m.

In order to solve the above problems, a double-sided heat dissipation substrate for high heat dissipation, high functionality, and high integration LED lighting includes a via hole forming step of forming a plurality of via holes penetrating from one surface of the Al substrate to the other surface of the Al substrate; An Al ₂ O ₃ oxide layer forming step of anodizing the Al substrate on which the via hole is formed to form an Al ₂ O ₃ oxide layer on the Al substrate; A first dry film attachment step of attaching a first dry film for masking an area that does not correspond to a pattern to the Al substrate on which the Al ₂ O ₃ oxide layer is formed; A Ni thin film layer forming step of depositing a Ni thin film layer on the Al substrate to which the first dry film is attached; A Cu thin film layer deposition step of depositing a Cu thin film layer on the Al substrate on which the Ni thin film layer is deposited; A second dry film attachment step of attaching a second dry film for masking a narrower area than the area masked by the first dry film to the Al substrate on which the Cu thin film layer is deposited; A pattern layer forming step of performing wet electroplating to form a pattern layer in an area not masked by the second dry film; and a dry film peeling step of peeling off the first dry film and the second dry film to remove the Ni thin film layer, Cu thin film layer, and pattern layer formed in areas that do not correspond to the pattern. A double-sided heat dissipation substrate formed by. provides.

According to an embodiment of the present invention, a high heat dissipation, high functionality, and highly fixed side heat dissipation substrate that can be applied to product groups where heat dissipation is important and double-sided layers can be applied, such as emotional lighting, converter-integrated lighting, DC converters, and double-sided products for electronic devices. can be formed.

According to one embodiment of the present invention, the pattern layers on the upper and lower surfaces of the substrate can be connected to each other through the pattern layer formed in the via hole.

According to one embodiment of the present invention, bonding strength can be improved by disposing a Ni thin film layer between the Al2O3 oxide film layer and the Cu thin film layer.

According to one embodiment of the present invention, it is a pattern plating method that forms a pattern layer only in the area corresponding to the pattern. Compared to the conventional panel plating method, an etching process is not performed, so the anodized Al2O3 oxide film layer is not destroyed. there is.

According to one embodiment of the present invention, when performing a sputtering process, a sputtering target can be smoothly deposited on the side of the via hole by vibrating the Al substrate.

According to one embodiment of the present invention, the bonding strength between the Al2O3 oxide layer and the Ni thin film layer can be improved by depositing the Ni thin film layer without sealing the Al2O3 oxide layer.

According to one embodiment of the present invention, the second dry film has a predetermined offset from the first dry film, thereby preventing the pattern layer corresponding to the pattern area from being removed when peeling off the dry film.

Figure 1 shows a double-sided heat dissipation substrate according to an embodiment of the present invention.
Figure 2 shows steps in a method of forming a double-sided heat dissipation substrate according to an embodiment of the present invention.
Figure 3 (a) shows the via hole forming step and the Al ₂ O ₃ oxide layer forming step according to an embodiment of the present invention.
Figure 3(b) shows the first dry film attachment step according to an embodiment of the present invention.
Figure 4 (a) shows the Ni thin film layer forming step according to an embodiment of the present invention.
Figure 4(b) shows the Cu thin film layer forming step according to an embodiment of the present invention.
Figure 5(a) shows the second dry film attachment step according to an embodiment of the present invention.
Figure 5(b) shows the pattern layer forming step according to an embodiment of the present invention.
Figure 6 shows a dry film peeling step according to an embodiment of the present invention.
Figure 7 shows areas masked by the first dry film and the second dry film and areas exposed without masking according to an embodiment of the present invention.
Figure 8 shows a cross-section of a heat dissipation substrate produced by the Al ₂ O ₃ oxide layer forming step according to an embodiment of the present invention.
Figure 9 shows detailed processes of the Ni thin film layer forming step and the Cu thin film layer forming step according to an embodiment of the present invention.
Figure 10 shows a conventional method of forming a heat dissipation substrate.

BRIEF DESCRIPTION OF THE DRAWINGS Various embodiments and/or aspects are now disclosed with reference to the drawings. In the following description, for purposes of explanation, numerous specific details are set forth to facilitate a general understanding of one or more aspects. However, it will also be appreciated by those skilled in the art that this aspect(s) may be practiced without these specific details. The following description and accompanying drawings set forth in detail certain example aspects of one or more aspects. However, these aspects are illustrative and some of the various methods in the principles of the various aspects may be utilized, and the written description is intended to encompass all such aspects and their equivalents.

Additionally, various aspects and features may be presented by a system that may include multiple devices, components and/or modules, etc. It is also understood that various systems may include additional devices, components and/or modules, etc. and/or may not include all of the devices, components, modules, etc. discussed in connection with the drawings. It must be understood and recognized.

As used herein, “embodiments,” “examples,” “aspects,” “examples,” etc. may not be construed to mean that any aspect or design described is better or advantageous over other aspects or designs. . The terms '~part', 'component', 'module', 'system', 'interface', etc. used below generally refer to computer-related entities, such as hardware, hardware, etc. A combination of and software, it can mean software.

Additionally, the terms “comprise” and/or “comprising” mean that the feature and/or element is present, but exclude the presence or addition of one or more other features, elements and/or groups thereof. It should be understood as not doing so.

Additionally, terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but the components are not limited by the terms. The above terms are used only for the purpose of distinguishing one component from another. For example, a first component may be named a second component, and similarly, the second component may also be named a first component without departing from the scope of the present invention. The term and/or includes any of a plurality of related stated items or a combination of a plurality of related stated items.

In addition, in the embodiments of the present invention, unless otherwise defined, all terms used herein, including technical or scientific terms, are generally understood by those skilled in the art to which the present invention pertains. It has the same meaning as Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and unless clearly defined in the embodiments of the present invention, have an ideal or excessively formal meaning. It is not interpreted as

Figure 1 shows a double-sided heat dissipation board 1 according to an embodiment of the present invention.

As shown in FIG. 1, the double-sided heat dissipation substrate 1 performs the first dry film attachment step, Ni thin film layer forming step, Cu thin film layer deposition step, and second dry film on each of both surfaces of the Al substrate 10. The film attachment step, the pattern layer formation step, and the dry film peeling step are performed in the same manner, so that the Ni formed in the pattern area (A) on each of both surfaces of the Al substrate 10 through the inner peripheral surface of the via hole 80 The thin film layer 30, Cu thin film layer 40, and pattern layer 50 may be connected.

Specifically, the double-sided heat dissipation substrate 1 according to an embodiment of the present invention may include a plurality of via holes 80 penetrating the upper and lower surfaces, and the pattern layer 50 formed on the upper surface of the double-sided heat dissipation substrate 1 and the pattern layer 50 formed on the lower surface may be connected to each other through the pattern layer 50 formed on the inner peripheral surface of the via hole 80.

Preferably, in one embodiment of the present invention, the pattern layer 50 is formed on the Al ₂ O ₃ oxide film layer 20, Ni thin film layer 30, and Cu thin film layer 40 sequentially deposited on the Al substrate 10. The Al ₂ O ₃ oxide film layer 20, Ni thin film layer 30, Cu thin film layer 40, and pattern layer 50 can be smoothly deposited on the inner peripheral surface of the via hole 80.

As a result, the double-sided heat dissipation substrate 1 according to an embodiment of the present invention has excellent heat dissipation properties and can be applied to LED lighting that requires a high level of heat dissipation performance. Specifically, it may be a thermal via that is formed below or close to the LED element, which is the main heating element of LED lighting, and dissipates heat generated on one side of the substrate to the other side.

In addition, the precision of the pattern layer 50 of the double-sided heat dissipation substrate 1 according to an embodiment of the present invention is improved, and thus the degree of integration can be improved. Specifically, the pattern layer 50 corresponds to a signal transmission layer that transmits electrical signals in the double-sided heat dissipation substrate 1, and connects the patterns on the upper and lower surfaces of the double-sided heat dissipation substrate 1 through the via hole 80 to provide high Highly integrated semiconductor circuit boards can be manufactured.

Hereinafter, a method for manufacturing the double-sided heat dissipation substrate 1 of the present invention having the above-described characteristics will be described in detail.

Figure 2 shows steps of a method for forming a double-sided heat dissipation substrate 1 according to an embodiment of the present invention.

As shown in FIG. 2, the method of manufacturing a double-sided heat dissipation substrate 1 for high heat dissipation, high functionality, and high integration LED lighting involves forming a plurality of via holes 80 penetrating from one surface of the Al substrate 10 to the other surface. A via hole forming step of forming a; An Al ₂ O ₃ oxide layer forming step of anodizing the Al substrate 10 on which the via hole 80 is formed to form an Al ₂ O ₃ oxide layer 20 on the Al substrate 10; A first dry film attachment step of attaching a first dry film 60 for masking an area that does not correspond to the pattern to the Al substrate 10 on which the Al ₂ O ₃ oxide layer 20 is formed; A Ni thin film layer forming step of depositing a Ni thin film layer 30 on the Al substrate 10 to which the first dry film 60 is attached; Cu thin film layer deposition step of depositing a Cu thin film layer 40 on the Al substrate 10 on which the Ni thin film layer 30 is deposited; A second dry film attachment step of attaching a second dry film 70 that masks a narrower area than the area masked by the first dry film 60 to the Al substrate 10 on which the Cu thin film layer 40 is deposited. ; A pattern layer forming step of performing wet electroplating to form a pattern layer 50 in an area not masked by the second dry film 70; and peeling the first dry film 60 and the second dry film 70 to remove the Ni thin film layer 30, Cu thin film layer 40, and pattern layer 50 formed in areas that do not correspond to the pattern. It may include a dry film peeling step.

First, the main material of the double-sided heat dissipation substrate 1 of the present invention may be the Al substrate 10 (aluminum substrate), which is commonly used to manufacture PCB boards. Specifically, the Al substrate 10 has excellent thermal conductivity, electrical insulation, and processing performance, and may be a substrate made of aluminum cut to a certain size.

Step S1 is a via hole forming step and may correspond to forming a via hole 80 in the Al substrate 10. Specifically, the via hole 80 can be formed by penetrating the upper and lower surfaces of the flat Al substrate 10 by a predetermined diameter. Preferably, the location, diameter, and number of via holes 80 can be flexibly determined according to the pattern to be formed on the Al substrate 10.

Additionally, in one embodiment of the present invention, the via hole 80 can be formed in the Al substrate 10 by applying any one of a plurality of known techniques for processing the via hole 80. For example, the via hole 80 may be formed by impregnating the Al substrate 10 in an aqueous potassium hydroxide (KOH) solution and performing a laser drilling process at the location where the via hole 80 is to be formed.

In one embodiment of the present invention, the diameter of the via hole 80 may range from 0.2 to 1.0 t (mm).

Step S2 is an Al ₂ O ₃ oxide layer forming step and may correspond to forming the Al ₂ O ₃ oxide layer 20 by anodizing the Al substrate 10. Specifically, the Al ₂ O ₃ oxide layer 20 may be formed on all surfaces of the Al substrate 10. Preferably, the Al ₂ O ₃ oxide layer 20 may be formed on all of the upper and lower surfaces of the Al substrate 10 and the inner peripheral surface of the via hole 80. More preferably, the Al ₂ O ₃ oxide layer 20 is formed on the upper surface, lower surface, and via hole 80 of the Al substrate 10, regardless of whether it corresponds to the pattern area (A) where the pattern layer 50 is to be formed. ) can be formed on any surface, including the inner peripheral surface.

Step S3 is the first dry film attachment step, where the first dry film is applied to expose the pattern area (A) where the pattern layer 50 is to be formed on the Al substrate 10 on which the Al ₂ O ₃ oxide film layer 20 is deposited. This may correspond to the step of attaching (60). Specifically, the first dry film 60 masks the area where the pattern layer 50 is not formed and exposes the pattern area A where the pattern layer 50 is to be formed. When peeled, only the pattern layer 50 formed in the pattern area A can be left on the Al substrate 10.

Step S4 is a Ni thin film layer forming step and may correspond to forming a Ni thin film layer 30 on the Al substrate 10 to which the first dry film 60 is attached. Specifically, the Ni thin film layer 30 has intermediate characteristics between the Al ₂ O ₃ oxide film layer 20 and the Cu thin film layer 40, and the deposition ability for the Cu thin film layer 40 is improved compared to the Al ₂ O ₃ oxide film layer 20. It can be. Additionally, the Ni thin film layer 30 may be formed both in the area masked by the first dry film 60 and in the area not masked.

Step S5 is a step of forming the Cu thin film layer 40, and may correspond to the step of forming the Cu thin film layer 40 on the Al substrate 10 on which the Ni thin film layer 30 is formed. Specifically, the Cu thin film layer 40 may be deposited on the Ni thin film layer 30. That is, the Cu thin film layer 40 can also be formed both in the area masked by the first dry film 60 and in the area not masked.

Step S6 is the second dry film attachment step, in which the pattern area (A) where the pattern layer 50 is to be formed is exposed on the Al substrate 10 on which the Ni thin film layer 30 and the Cu thin film layer 40 are deposited. This may correspond to the step of attaching the dry film 70. Specifically, the second dry film 70 masks the area where the pattern layer 50 is not formed and exposes the pattern area A where the pattern layer 50 is to be formed. When a wet copper plating process (pattern layer forming step below) is performed in the attached state, the pattern layer 50 can be formed only in the pattern area (A).

Meanwhile, in one embodiment of the present invention, there is a predetermined offset d in the area masked by the first dry film 60 and the second dry film 70, and a detailed description of this will be provided later.

Step S7 is a pattern layer forming step and may correspond to forming the pattern layer 50 in the pattern area A. Specifically, as described above, the pattern layer 50 can be formed in the area not masked by the second dry film 70 by performing a wet copper plating process on the Al substrate 10 to which the second dry film 70 is attached. there is.

Meanwhile, in one embodiment of the present invention, one or more of the above-described processes are performed on the upper and lower surfaces of the Al substrate 10, respectively, so that the pattern layer 50 is formed on the upper and lower surfaces of the Al substrate 10, and via holes ( 80) can be formed on each inner surface. Specifically, in one embodiment of the present invention, after step S2, steps S3 to S8 may be repeatedly performed on the upper and lower surfaces of the Al substrate 10, respectively.

Below, a cross-sectional view of the double-sided heat dissipation substrate 1 is shown when the above-described processes are sequentially performed. Meanwhile, in FIGS. 3 to 6, A refers to the 'pattern area (A)' where the pattern layer 50 is formed on the double-sided heat dissipation substrate 1, and B refers to the 'pattern area (A)' where the pattern layer 50 is not formed. It means ‘area that does not apply (B)’.

Figure 3 (a) shows the via hole forming step and the Al ₂ O ₃ oxide layer forming step according to an embodiment of the present invention.

As shown in (a) of FIG. 3, a plurality of via holes 80 penetrating the upper and lower surfaces may be formed in the Al substrate 10, and an Al ₂ O ₃ oxide film may be formed on all surfaces of the Al substrate 10. Layer 20 may be formed.

Specifically, anodizing can be performed to form an oxide film layer, Al ₂ O ₃ oxide film layer 20, on all surfaces of the Al substrate 10, and more preferably on the upper surface, lower surface, and via hole 80 of the Al substrate 10. ) The Al ₂ O ₃ oxide layer 20 may be formed on both inner surfaces of the . That is, the Al substrate 10 can be protected by the Al ₂ O ₃ oxide layer 20 without being exposed to the outside.

Meanwhile, in one embodiment of the present invention, the anodizing process may be a hard anodizing process.

Figure 3(b) shows the step of attaching the first dry film 60 according to an embodiment of the present invention.

As shown in (b) of FIG. 3, the pattern area (A) of the Al substrate 10 to which the first dry film 60 is attached is exposed, and the Ni thin film layer forming step is performed by forming the first dry film 60. The Ni thin film layer 30 can be formed in the area masked by the dry film 60 and in the area not masked.

The first dry film 60 may be attached to the Al substrate 10 on which the Al ₂ O ₃ oxide layer 20 is formed. Specifically, the first dry film 60 is a film-like material for forming circuits or patterns on PCBs, BGAs, etc., and when the first dry film 60 is attached, it is attached to the pattern area (A) on the surface of the Al substrate 10. Only the relevant part can be exposed.

That is, the first dry film 60 may be a film that does not mask the area corresponding to the pattern area (A) but masks the area (B) that does not correspond to the pattern area. In other words, when the first dry film 60 is attached to the Al substrate 10, the area corresponding to the pattern area A is exposed, and the area not corresponding to the pattern area A is exposed to the first dry film 60. ) can be obscured by .

Meanwhile, in one embodiment of the present invention, different types of first dry films 60 can be attached to the upper and lower surfaces of the Al substrate 10, respectively. Specifically, in Figure 3 (b), the first dry film 60 attached to the upper and lower surfaces of the Al substrate 10 masks corresponding areas, but in another embodiment of the present invention, the Al substrate 10 By attaching different types of first dry films 60 to the upper and lower surfaces of , the first dry films 60 attached to the upper and lower surfaces can mask different areas.

Preferably, the shape of the first dry film 60 attached to the upper and lower surfaces of the Al substrate 10 can be determined in consideration of the pattern shape to be formed on the upper and lower surfaces of the double-sided heat dissipation substrate 1, respectively. .

That is, in one embodiment of the present invention, patterns of different shapes may be formed on the upper and lower surfaces of the double-sided heat dissipation substrate 1, respectively.

Figure 4 (a) shows the steps of forming the Ni thin film layer 30 according to an embodiment of the present invention.

As shown in (a) of FIG. 4, a Ni thin film layer 30 can be formed on the Al substrate 10 to which the first dry film 60 is attached. Specifically, the Ni thin film layer 30 is Ar and O ₂ gas, an applied power of 1 to 10 kW, and 1 to 5 kW. It can be formed by sputtering under 10 ^-3 torr conditions.

Additionally, the Ni thin film layer 30 may have a thickness ranging from 27 to 33 nm. Preferably, the Ni thin film layer 30 may be 30 nm.

The Ni thin film layer 30 formed by the sputtering process under the above conditions can be formed on all surfaces of the Al substrate 10 to which the first dry film 60 is attached. Specifically, the Ni thin film layer 30 is not masked by the first dry film 60 and is masked by the pattern area (A) where the Al ₂ O ₃ oxide film layer 20 is exposed and the first dry film 60 to form Al. _{The 2} O ₃ oxide layer 20 may be formed in an area (B) that does not correspond to a pattern area where the oxide layer 20 is not exposed.

Preferably, the Ni thin film layer 30 may be formed on the Al ₂ O ₃ oxide film layer 20 in the pattern area (A) on the upper and lower surfaces of the Al substrate 10, and the area (B) that does not correspond to the pattern area. The Ni thin film layer 30 may be formed on the first dry film 60.

Meanwhile, as described above, in one embodiment of the present invention, the step of forming the Ni thin film layer 30 can be performed on each of the upper and lower surfaces of the Al substrate 10, and Ni is also formed on the side of the via hole 80 through the process. The thin film layer 30 can be formed smoothly.

On the other hand, Ni forming the Ni thin film layer 30 has excellent affinity with each of Al forming the Al ₂ O ₃ oxide film layer 20 and Cu forming the Cu thin film layer 40, and thus has excellent affinity to the Al ₂ O ₃ oxide film layer 20. In contrast, the deposition ability for the Cu thin film layer 40 may be excellent. Specifically, rather than depositing the Cu thin film layer 40 directly on the Al ₂ O ₃ oxide layer 20, the Ni thin film layer 30 is deposited on the Al ₂ O ₃ oxide layer 20 and the Cu thin film layer ( When depositing 40), deposition power can be excellent.

Figure 4 (b) shows the step of forming the Cu thin film layer 40 according to an embodiment of the present invention.

As shown in Figure 4 (b), a Cu thin film layer 40 can be formed on the Al substrate 10 on which the Ni thin film layer 30 is formed. Specifically, the Cu thin film layer 40 is Ar and O ₂ gas, an applied power of 1 to 10 kW, and 1 to 5 kW. It can be formed by sputtering under 10 ^-3 torr conditions.

Additionally, the Cu thin film layer 40 may have a thickness ranging from 360 to 440 nm. Preferably, the Cu thin film layer 40 may be 400 nm.

Preferably, the Cu thin film layer 40 may have a wider thickness than the Ni thin film layer 30.

The Cu thin film layer 40 formed by the sputtering process under the above conditions can be formed on all surfaces of the Al substrate 10 on which the Ni thin film layer 30 is formed. Specifically, as described above, the Ni thin film layer 30 is not masked by the first dry film 60, and is thus exposed to the pattern area A and the first dry film 60 where the Al ₂ O ₃ oxide film layer 20 is exposed. It can be formed in the area (B) that does not correspond to the pattern area where the Al ₂ O ₃ oxide film layer 20 is not exposed by masking, and the Cu thin film layer 40 formed on the Ni thin film layer 30 is also prepared in the same manner. 1Dry film 60 can be formed in both masked and non-masked areas.

Preferably, the Cu thin film layer 40 may be formed on the Ni thin film layer 30 in the pattern area (A) and the area (B) not corresponding to the pattern area on the upper and lower surfaces of the Al substrate 10.

Meanwhile, as described above, in one embodiment of the present invention, the step of forming the Cu thin film layer 40 can be performed on each of the upper and lower surfaces of the Al substrate 10, and through the process, Cu is also formed on the side of the via hole 80. The thin film layer 40 can be formed smoothly.

Figure 5(a) shows the step of attaching the second dry film 70 according to an embodiment of the present invention.

As shown in (a) of FIG. 5, the Al substrate 10 to which the second dry film 70 is attached has a pattern area (A) and a pattern area (A) extending from the pattern area (A) by a predetermined length. The area is exposed, and the pattern layer 50 may be formed in the pattern area A, which is not masked by the second dry film 70, and a portion of the area not corresponding to the pattern.

The second dry film 70 can be attached to the Al substrate 10 on which the Cu thin film layer 40 is formed. Specifically, the second dry film 70 is a film-like material for forming circuits or patterns on PCBs, BGAs, etc., and when the second dry film 70 is attached, a 'pattern area (A)' is formed on the surface of the Al substrate 10. 'The part corresponding to' and 'a part of the area (B) that does not correspond to the pattern area' may be exposed. Preferably, when the second dry film 70 is attached, all areas corresponding to the pattern area A are exposed on the upper and lower surfaces of the Al substrate 10, and some of the parts corresponding to the pattern area A are exposed. (The part corresponding to offset (d)) may not be exposed.

Meanwhile, the side of the via hole 80 to which the second dry film 70 is not attached may be exposed without being masked by the second dry film 70.

That is, there may be an offset d in the area masked by the first dry film 60 and the second dry film 70. Specifically, in (a) of Figure 5, the first dry film 60 is masking the area (B) that does not correspond to the pattern area, and the second dry film 70 masks the area (B) that does not correspond to the pattern area. A narrower area is masked by the offset (d).

That is, the second dry film 70 can mask an area that is smaller than the area masked by the first dry film 60 by a predetermined area. Specifically, the second dry film 70 is offset (d) from the boundary between the 'pattern area (A)' and the 'area not corresponding to the pattern area (B)' toward the 'area not corresponding to the pattern area (B)'. The narrowed area can be masked, and the area that does not correspond to this can be exposed.

In one embodiment of the present invention, the offset is 1 to 10 It may be m. Preferably the offset is 10 It may be m.

That is, the second dry film 70 does not mask the area corresponding to the offset (d) among the 'area corresponding to the pattern area (A)' and the 'area not corresponding to the pattern area (B)', and the 'pattern area (B)' does not mask the area corresponding to the offset (d). Among the areas (B) that do not correspond to ', the area that does not correspond to the offset (d) may be a masking film.

Meanwhile, in one embodiment of the present invention, different types of second dry films 70 can be attached to the upper and lower surfaces of the Al substrate 10, respectively. Specifically, in Figure 5(b), the second dry film 70 attached to the upper and lower surfaces of the Al substrate 10 masks corresponding areas, but in another embodiment of the present invention, the Al substrate 10 By attaching second dry films 70 of different shapes to the upper and lower surfaces of , the second dry films 70 attached to the upper and lower surfaces can mask different areas.

Preferably, the shape of the second dry film 70 attached to the upper and lower surfaces of the Al substrate 10 can be determined in consideration of the pattern shape to be formed on the upper and lower surfaces of the double-sided heat dissipation substrate 1, respectively. .

That is, in one embodiment of the present invention, patterns of different shapes may be formed on the upper and lower surfaces of the double-sided heat dissipation substrate 1, respectively.

Figure 5(b) shows the pattern layer 50 forming step according to an embodiment of the present invention.

As shown in (b) of FIG. 5, a pattern layer 50 can be formed on the Al substrate 10 to which the second dry film 70 is attached. Specifically, a wet copper plating process may be performed on the Al substrate 10 to which the second dry film 70 is attached to form the pattern layer 50 in an area not masked by the second dry film 70.

Preferably, on the upper and lower surfaces of the Al substrate 10, the pattern layer 50 is formed in the area not masked by the second dry film 70, and the pattern layer 50 is formed in the area masked by the second dry film 70. (50) may not be formed. In other words, the pattern layer 50 may also be formed in the area corresponding to the offset (d) in (b) of FIG. 5.

Additionally, the pattern layer 50 may be formed on the side of the via hole 80 where the second dry film 70 is not attached. Specifically, an Al ₂ O ₃ oxide film layer 20, a Ni thin film layer 30, a Cu thin film layer 40, and a pattern layer 50 may be formed sequentially on the side of the via hole 80. Preferably, the diameter of the via hole 80 may be larger than the sum of the thicknesses of the Al ₂ O ₃ oxide film layer 20, Ni thin film layer 30, Cu thin film layer 40, and pattern layer 50. More preferably, the diameter of the via hole 80 may be at least twice as large as the combined thickness of the Al ₂ O ₃ oxide film layer 20, Ni thin film layer 30, Cu thin film layer 40, and pattern layer 50. there is.

In this standard, when the Al ₂ O ₃ oxide film layer 20, Ni thin film layer 30, Cu thin film layer 40, and pattern layer 50 are formed on the inner surface of the via hole 80, the opposing pattern layers (50) are not connected to each other, and each can form an independent circuit.

Figure 6 shows a dry film peeling step according to an embodiment of the present invention.

As shown in Figure 6, the Ni thin film layer 30 has a thickness of 0.05 to 0.015. With a thickness range of m, the Cu thin film layer 40 has a thickness of 0.1 to 0.3 It can have a thickness range of m.

Specifically, the first dry film 60 and the second dry film 70 are peeled off, and the Ni thin film layer 30, Cu thin film layer 40, and pattern layer 50 are formed in the area (B) that does not correspond to the pattern area. ) can be removed. Specifically, when the first dry film 60 is peeled off, the Ni thin film layer 30, Cu thin film layer 40, and pattern layer 50 (formed in the area corresponding to the offset) are formed on the upper side of the first dry film 60. ) can be removed.

Meanwhile, by peeling off the first dry film 60 and the second dry film 70, the Al ₂ O ₃ oxide film layer 20, Ni thin film layer 30, Cu thin film layer 40, and pattern are formed only in the pattern area (A). Layer 50 may be left behind.

Meanwhile, when manufacturing a heat dissipation substrate using conventional technology, a part of the pattern layer 50 that does not correspond to the pattern area A may also be removed during the process of peeling the second dry film 70. Specifically, as described above, the pattern layer 50 is formed in an area that is not masked by the second dry film 70, but is in contact with the second dry film 70 during the process of peeling off the second dry film 70. A portion of the pattern layer 50 may be removed altogether.

That is, when attaching the second dry film 70 in a form that completely corresponds to the pattern shape to be formed on the double-sided heat dissipation substrate 1, the pattern area A is formed in the process of peeling off the second dry film 70. A part of the pattern layer 50 corresponding to may also be removed, and as a result, a pattern layer 50 that does not correspond to the pattern shape initially designed may be formed on the double-sided heat dissipation substrate 1.

In order to improve this problem, the double-sided heat dissipation substrate 1 of the present invention includes a process of peeling off the second dry film 70 by placing a predetermined offset d on the second dry film 70 as described above. Even if a part of the pattern layer 50 in contact with the second dry film 70 falls off, the pattern layer 50 corresponding to the pattern shape originally designed can be formed on the double-sided heat dissipation substrate 1.

Specifically, referring to (b) of FIG. 5, in the process of peeling off the second dry film 70, the pattern layer 50 in contact with the second dry film 70 is removed in the area corresponding to the offset (d). By doing so, the pattern layer 50 formed in the pattern area A may be left without being removed to form a pattern of the double-sided heat dissipation substrate 1. As a result, according to an embodiment of the present invention, a more precise circuit pattern can be formed on a double-sided circuit board.

In one embodiment of the present invention, the Al substrate 10 on which the pattern layer 50 is formed is precipitated in a neutral chemical, and the neutral chemical is absorbed through the Ni thin film layer 30 and Cu thin film layer 40 having a predetermined moisture permeability rate. By melting the first dry film 60, the first dry film 60 can be peeled off.

Specifically, the primary deposition plating layer (Cu thin film layer 40) has a lower moisture permeability of the metal than the secondary electroplating layer (pattern layer 50), so electroplating is performed as much as the offset (d) section to achieve relatively low moisture permeability. The rate can be supplemented.

As a result, the double-sided heat dissipation substrate (1) of the present invention manufactured by sequentially performing the above processes has Al ₂ O ₃ in the pattern area (A) of the upper and lower surfaces of the Al substrate (10), as shown in FIG. An oxide film layer 20, a Ni thin film layer 30, a Cu thin film layer 40, and a pattern layer 50 may be formed, and an Al ₂ O ₃ oxide film layer 20 is formed in the area B that does not correspond to the pattern area. This can be formed.

In addition, an Al ₂ O ₃ oxide film layer 20, a Ni thin film layer 30, a Cu thin film layer 40, and a pattern layer 50 are formed on the side of the via hole 80, thereby forming a pattern area (A) on the upper and lower surfaces. The pattern layer 50 formed on the can be connected through the pattern layer 50 formed on the side of the via hole 80.

Figure 7 shows areas masked by the first dry film 60 and second dry film 70 and areas exposed without masking according to an embodiment of the present invention.

Figure 7 (a) shows the Al substrate 10 when the first dry film 60 is attached. Specifically, the area exposed without being masked by the first dry film 60 on the upper or lower surface of the Al substrate 10 may correspond to the pattern to be formed on the double-sided heat dissipation substrate 1. In other words, the area masked by the first dry film 60 on the upper or lower surface of the Al substrate 10 may correspond to an area that does not correspond to the pattern to be formed on the double-sided heat dissipation substrate 1.

Meanwhile, Figure 7(b) shows the Al substrate 10 when the second dry film 70 is attached. Specifically, the area exposed without being masked by the second dry film 70 on the upper or lower surface of the Al substrate 10 may correspond to a wider area than the pattern to be formed on the double-sided heat dissipation substrate 1. In other words, the area masked by the second dry film 70 on the upper or lower surface of the Al substrate 10 may correspond to a narrower range than the area that does not correspond to the pattern to be formed on the double-sided heat dissipation substrate 1.

That is, the second dry film 70 can mask an area as narrow as the offset d compared to the area masked by the first dry film 60.

As a result, when the second dry film 70 is peeled off, a part of the pattern layer 50 in contact with the second dry film 70 will be removed together, but the part will be located in the area corresponding to the offset d. , the pattern of the double-sided heat dissipation substrate 1 can be formed without removing the pattern layer 50 formed in the pattern area A.

In one embodiment of the present invention, the offset (d) is 40 to 60 It may be m. Preferably the offset (d) is 50 It may be m.

Figure 8 shows a cross-section of a heat dissipation substrate produced by the Al ₂ O ₃ oxide layer forming step according to an embodiment of the present invention.

As shown in FIG. 8, the Al ₂ O ₃ oxide film layer forming step does not seal the pores 21 formed in the Al ₂ O ₃ oxide film layer 20, but forms the Ni thin film layer 30. Silver is deposited directly on the surface of the Al ₂ O ₃ oxide layer 20 on which pores 21 are formed, and the adhesion between the Al ₂ O ₃ oxide layer 20 and the Ni thin film layer 30 can be improved. .

Meanwhile, as shown in (a) of FIG. 8, in one embodiment of the present invention, the Ni thin film layer 30 may be deposited directly on the surface of the unsealed Al ₂ O ₃ oxide film layer 20. Specifically, a large number of pores 21, which are micropores, may be formed on the surface of the Al ₂ O ₃ oxide film layer 20 formed by an anodizing process, and the Ni thin film layer 30 is an Al ₂ O ₃ oxide film that has not been pore-treated. Layer 20 may be deposited directly on the surface.

In this way, when the Ni thin film layer 30 is directly deposited without sealing the surface of the Al ₂ O ₃ oxide film layer 20 on which the pores 21 are formed, the Ni thin film layer 30 is an Al ₂ O ₃ oxide film layer. By depositing directly on (20), the adhesion between the Ni thin film layer 30 and the Al ₂ O ₃ oxide film layer 20 can be improved.

Meanwhile, as shown in (b) of FIG. 8, in another embodiment of the present invention, the Ni thin film layer 30 may be deposited on the surface of the sealed Al ₂ O ₃ oxide film layer 20. Specifically, a large number of pores 21, which are micropores, may be formed on the surface of the Al ₂ O ₃ oxide film layer 20 formed by an anodizing process, and by performing a pore sealing treatment, the Al ₂ O ₃ oxide film layer 20 may be formed. A sealing layer 22 may be formed. The Ni thin film layer 30 may be deposited on the sealing layer 22 formed on the Al ₂ O ₃ oxide film layer 20 through a sealing process.

In another embodiment of the present invention, the sealing process may include one or more of hydration sealing treatment, metal salt sealing treatment, organic material sealing treatment, and painting sealing treatment.

Figure 9 shows detailed processes of the Ni thin film layer forming step and Cu thin film layer forming step according to an embodiment of the present invention.

As shown in Figure 9, in the Ni thin film layer forming step, the Ni thin film layer 30 is deposited while vibrating the Al substrate 10 to which the first dry film 60 is attached, and the Cu thin film layer deposition step is The Cu thin film layer 40 is deposited while vibrating the Al substrate 10 on which the Ni thin film layer 30 is deposited, and the Ni thin film layer 30 is deposited on the inner peripheral surface of the via hole 80 formed in the Al substrate 10. , Cu thin film layer 40 can be formed.

As described above, the Ni thin film layer 30 can be deposited by performing a sputtering process using Ni as a sputtering target. Meanwhile, in one embodiment of the present invention, the Ni thin film layer forming step may be performed while the Al substrate 10 (more specifically, the Al substrate 10 on which the Al ₂ O ₃ oxide layer 20 is formed) is vibrated.

Specifically, in the present invention, the Ni thin film layer 30 is preferably formed uniformly on all surfaces of the Al substrate 10 regardless of the first dry film 60, and more specifically, Ni thin film layer 30 is also formed on the side of the via hole 80. It is preferable that the thin film layer 30 is formed uniformly.

To this end, in one embodiment of the present invention, the Ni thin film layer forming step is performed while vibrating the Al substrate 10, so that the Ni thin film layer 30 can be uniformly formed on the side of the via hole 80.

Meanwhile, Figure 9 shows a sputtering process using Ni as a sputtering target, but the sputtering process can be performed in the same manner when sputtering using Cu as a sputtering target. Specifically, in one embodiment of the present invention, the Cu thin film layer forming step may be performed while the Al substrate 10 (more specifically, the Al substrate 10 on which the Ni thin film layer 30 is formed) is vibrated.

More specifically, in the present invention, the Cu thin film layer 40 is preferably formed uniformly on all surfaces of the Al substrate 10 regardless of the first dry film 60, and more specifically, on the side of the via hole 80. It is desirable that the Cu thin film layer 40 is formed uniformly.

To this end, in one embodiment of the present invention, the Cu thin film layer forming step is performed while vibrating the Al substrate 10, so that the Cu thin film layer 40 can be uniformly formed on the side of the via hole 80.

Figure 10 shows a conventional method of forming a heat dissipation substrate.

As shown in the upper image of FIG. 10, the method of creating a heat dissipation substrate using conventional technology is a panel plating method, which involves forming an Al ₂ O ₃ oxide layer on the Al substrate 10 (the first layer in FIG. 10). 20), a Ni thin film layer 30 and a Cu thin film layer 40 (second layer in FIG. 10) can be formed, and a copper plating layer (third layer in FIG. 10) can be deposited again. More specifically, the copper plating layer can be uniformly formed on all surfaces of the substrate regardless of the pattern shape to be formed on the surface.

Thereafter, a dry film (the fourth layer on the left and right in FIG. 10) is attached to the copper plating layer, and an etching process is performed to remove the copper plating layer in areas not masked by the dry film, thereby forming the pattern layer 50.

Meanwhile, in this and the prior art, as shown in the lower image of FIG. 10, in the process of removing the copper plating layer through an etching process, a part of the Al ₂ O ₃ oxide film layer 20 is also removed, exposing the Al substrate 10. Problems have been reported. In this way, when the oxide layer (Al ₂ O ₃ oxide layer 20) of the Al substrate 10 is peeled off, the wear resistance, corrosion resistance, heat resistance, and insulation properties of the heat dissipation substrate may be reduced.

On the other hand, the double-sided heat dissipation substrate 1 according to an embodiment of the present invention does not perform the etching process, so the above-described problem does not occur. Specifically, the present invention is a panel plating method that does not form a copper plating layer on all surfaces of the substrate regardless of the pattern shape, but instead forms a dry film on the Al ₂ O ₃ oxide film layer (20), Ni thin film layer (30), and Cu thin film layer (40). (Preferably a second dry film 70) can be attached to form a copper plating layer (pattern layer 50) only in the pattern area (A).

In other words, there is no need to perform an etching process to remove the copper plating layer in the area (B) that does not correspond to the pattern area of the present invention. Accordingly, the Al ₂ O ₃ oxide film layer 20 is removed by the etching process, thereby forming the Al substrate. (10) It can be prevented from being exposed to the outside.

As a result, the double-sided heat dissipation substrate 1 according to an embodiment of the present invention can have improved wear resistance, corrosion resistance, heat resistance, and insulation.

According to an embodiment of the present invention, a high heat dissipation, high functionality, and highly fixed side heat dissipation substrate that can be applied to product groups where heat dissipation is important and double-sided layers can be applied, such as emotional lighting, converter-integrated lighting, DC converters, and double-sided products for electronic devices. can be formed.

According to one embodiment of the present invention, the pattern layers on the upper and lower surfaces of the substrate can be connected to each other through the pattern layer formed in the via hole.

According to one embodiment of the present invention, bonding strength can be improved by disposing a Ni thin film layer between the Al2O3 oxide film layer and the Cu thin film layer.

According to one embodiment of the present invention, it is a pattern plating method that forms a pattern layer only in the area corresponding to the pattern. Compared to the conventional panel plating method, an etching process is not performed, so the anodized Al2O3 oxide film layer is not destroyed. there is.

According to one embodiment of the present invention, when performing a sputtering process, a sputtering target can be smoothly deposited on the side of the via hole by vibrating the Al substrate.

According to one embodiment of the present invention, the bonding strength between the Al2O3 oxide layer and the Ni thin film layer can be improved by depositing the Ni thin film layer without sealing the Al2O3 oxide layer.

According to one embodiment of the present invention, the second dry film has a predetermined offset from the first dry film, thereby preventing the pattern layer corresponding to the pattern area from being removed when peeling off the dry film.

As described above, although the embodiments have been described with limited examples and drawings, various modifications and variations can be made by those skilled in the art from the above description. For example, the described techniques are performed in a different order than the described method, and/or components of the described system, structure, device, circuit, etc. are combined or combined in a different form than the described method, or other components are used. Alternatively, appropriate results may be achieved even if substituted or substituted by an equivalent. Therefore, other implementations, other embodiments, and equivalents of the claims also fall within the scope of the claims described below.

Claims (3)

A method of manufacturing a high heat dissipation, high functionality, and highly integrated heat dissipation substrate applied to LED lighting,
An Al ₂ O ₃ oxide layer forming step of anodizing an Al substrate to form an Al ₂ O ₃ oxide layer on the Al substrate;
A first dry film attachment step of attaching a first dry film for masking an area that does not correspond to a pattern to the Al substrate on which the Al ₂ O ₃ oxide layer is formed;
A Ni thin film layer forming step of depositing a Ni thin film layer on the Al substrate to which the first dry film is attached;
A Cu thin film layer deposition step of depositing a Cu thin film layer on the Al substrate on which the Ni thin film layer is deposited;
A second dry film attachment step of attaching a second dry film for masking a narrower area than the area masked by the first dry film to the Al substrate on which the Cu thin film layer is deposited;
A pattern layer forming step of performing wet electroplating to form a pattern layer in an area not masked by the second dry film; and
A dry film peeling step of peeling off the first dry film and the second dry film to remove the Ni thin film layer, Cu thin film layer, and pattern layer formed in areas that do not correspond to the pattern. method.
In claim 1,
The method of manufacturing the heat dissipation substrate is
It further includes a via hole forming step of forming a plurality of via holes penetrating from one surface of the Al substrate to the other surface, which is performed before the Al ₂ O ₃ oxide film layer forming step,
The heat dissipation board is,
For each surface on both sides of the Al substrate, the first dry film attachment step, Ni thin film layer formation step, Cu thin film layer deposition step, second dry film attachment step, pattern layer formation step, and dry film peeling step are performed in the same manner. ,
A method of manufacturing a heat dissipation substrate in which the Ni thin film layer, Cu thin film layer, and pattern layer formed in the pattern areas of each surface of both sides of the Al substrate are connected through the inner peripheral surface of the via hole.
In claim 1,
The Al substrate to which the first dry film is attached is,
The pattern area is exposed,
The Ni thin film layer forming step is,
Forming a Ni thin film layer in the area masked by the first dry film and in the area not masked,
The Al substrate to which the second dry film is attached is,
A pattern area and an area extended by a predetermined offset from the pattern area are exposed,
The pattern layer is,
A method of manufacturing a heat dissipation substrate, wherein the second dry film is formed in a portion of the pattern area that is not masked and a portion of the area that does not correspond to the pattern.

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