KR102632561B1 - Apparatus and method for inspecting EUV(Extreme Ultraviolet) mask, and method for fabricating EUV mask comprising the method - Google Patents

Abstract

The technical idea of the present invention is to provide an EUV mask inspection device and method that can inspect an EUV mask at high speed with high light efficiency, and an EUV mask manufacturing method using the method. The EUV mask inspection device includes a light source that generates and outputs light; a linear zone plate that outputs light from the light source as line-shaped light; a slit plate that blocks and outputs high-order diffraction light components from the line-shaped light; A stage where an EUV (Extreme Ultraviolet) mask to be inspected is placed; and a detector configured to detect light reflected when light from the slit plate is irradiated to the EUV mask.

Description

EUV mask inspection device and method, and EUV mask manufacturing method including the method {Apparatus and method for inspecting EUV (Extreme Ultraviolet) mask, and method for fabricating EUV mask comprising the method}

The technical idea of the present invention relates to an EUV mask inspection device and method, and particularly to an EUV mask inspection device and method that can inspect an EUV mask at high speed.

Recently, as the line width of semiconductor circuits has gradually become smaller, light sources with shorter wavelengths have been required. For example, extreme ultra-violet (EUV) light is used as an exposure light source. Due to the absorption characteristics of EUV, a reflective EUV mask is generally used in the EUV exposure process. As the difficulty of the exposure process increases, small errors in the EUV mask itself can cause serious errors in the circuit pattern on the wafer. Accordingly, an EUV mask inspection process can be performed to determine whether defects exist in the EUV mask. Here, the defect may be the presence of contaminants such as fine particles on the EUV mask, and/or an error in the shape or size of the pattern formed on the EUV mask.

The problem to be solved by the technical idea of the present invention is to provide an EUV mask inspection device and method that can inspect an EUV mask at high speed with high light efficiency, and an EUV mask manufacturing method including the method.

In order to solve the above problem, the technical idea of the present invention is to include a light source that generates and outputs light; a linear zone plate that outputs light from the light source as line-shaped light; a slit plate that blocks and outputs high-order diffraction light components from the line-shaped light; A stage where an EUV (Extreme Ultraviolet) mask to be inspected is placed; and a detector configured to detect light reflected when light from the slit plate is irradiated to the EUV mask.

In addition, the technical idea of the present invention is to solve the above problem, a light source that generates and outputs light; a scan mirror that reflects and outputs light from the light source while moving it in a first direction; a linear zone plate that outputs light from the scan mirror as light in the form of a line extending in the first direction; a slit plate that blocks and outputs high-order diffraction light components from the line-shaped light; and a first detector configured to detect light reflected when light from the slit plate is irradiated to the EUV mask as an inspection target.

Furthermore, the technical idea of the present invention is to solve the above problem, including generating and outputting light from a light source; In a linear zone plate, outputting light from the light source as light in the form of a line extending in a first direction; blocking and outputting high-order diffraction light components from the line-shaped light at a slit plate; and detecting light reflected by irradiating light from the slit plate to an EUV mask that is an inspection target at a first detector. It provides an EUV mask inspection method including a.

Meanwhile, in order to solve the above problem, the technical idea of the present invention includes the steps of generating and outputting light from a light source; In a linear zone plate, outputting light from the light source as light in the form of a line extending in a first direction; blocking and outputting high-order diffraction light components from the line-shaped light at a slit plate; and detecting light reflected from the slit plate by irradiating the light from the slit plate to an EUV mask to be inspected, in a first detector; In an analysis device, analyzing detected light to determine whether a defect exists in the EUV mask; and performing a subsequent process on the EUV mask when there is no defect in the EUV mask.

The EUV mask inspection device according to the technical idea of the present invention creates line light using a linear zone plate and moves the EUV mask by moving the stage, thereby capturing the EUV mask as a line scan image using a TDI camera. and, accordingly, the EUV mask can be inspected at high speed.

In addition, the EUV mask inspection device according to the technical idea of the present invention generates line light using a linear zone plate and removes high-order diffraction light components from the line light through a slit plate, thereby increasing light efficiency in inspection of EUV masks. Additionally, clear images can be detected.

As a result, the EUV mask inspection device of this embodiment uses a linear zone plate, slit plate, stage, and TDI camera to obtain high light efficiency and clear images and can inspect the EUV mask precisely and at high speed.

1 is a structural diagram schematically showing an EUV mask inspection device according to an embodiment of the present invention.
FIG. 2A is a plan view of the linear zone plate in the EUV mask inspection device of FIG. 1, FIG. 2B is a conceptual diagram showing the phenomenon of light condensing through the linear zone plate of FIG. 2A, and FIG. 2C is a linear zone plate of FIG. 2A. This is a conceptual diagram showing the form of light output through .
FIG. 3A is a top view of a slit plate in the EUV mask inspection device of FIG. 1, FIG. 3B is a conceptual diagram showing the phenomenon of light blocking high-order diffraction light components through the slit plate of FIG. 3A, and FIG. 3C is a diagram of FIG. 3A. This is a conceptual diagram showing the form of light output through a slit plate.
Figure 4a is a structural diagram schematically showing an EUV mask inspection device according to an embodiment of the present invention, Figure 4b is a structural diagram showing in more detail from the light source to the slit plate in the EUV mask inspection device of Figure 4a, and Figure 4c is a scan This is a cross-sectional view showing the mirror in more detail, and Figure 4D is a conceptual diagram showing the pixel portion of the detector in more detail.
Figure 5 is a structural diagram schematically showing an EUV mask inspection device according to an embodiment of the present invention.
FIGS. 6A to 6C are conceptual diagrams to explain that in the EUV mask inspection device of FIG. 4A, the movement of light due to rotation of the scan mirror becomes non-uniform.
FIGS. 7A and 7B are conceptual diagrams to explain the principle of uniformly outputting light movement using a time adjustment optical device in the EUV mask inspection device of FIG. 5.
8 to 10B are structural diagrams schematically showing an EUV mask inspection device according to embodiments of the present invention.
11 to 13 are flowcharts schematically showing an EUV mask inspection method according to embodiments of the present invention.
14 are flowcharts schematically showing an EUV mask manufacturing method using an EUV mask inspection method according to embodiments of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. The same reference numerals are used for the same components in the drawings, and duplicate descriptions thereof are omitted.

1 is a structural diagram schematically showing an EUV mask inspection device according to an embodiment of the present invention.

Referring to FIG. 1, the EUV mask inspection device 1000 of this embodiment includes a light source 100, a linear zone plate 200, a slit plate 300, a stage 400, a detector 500, and It may include an analysis device 600.

The light source 100 may generate and output light Bc. The light source 100 may generate and output any one of short wavelength light (Bc), for example, EUV, deep ultraviolet (DUV), and X-ray. In the EUV mask inspection apparatus 1000 of this embodiment, the light source 100 may be, for example, an EUV light source that generates EUV.

Light Bc from the light source 100 may be output in a circular light form. Here, circular light may mean light that has a circular shape on a cross-section perpendicular to the direction in which the light travels. A picture Ic of circular light is shown below the light source 100. Meanwhile, in the case of circular light, the intensity of light decreases with a Gaussian distribution, and the size of light can be defined as the distance between two points with a light intensity of a size set based on the maximum light intensity at the center. Of course, the size of the circular light may be defined by other criteria. In the EUV mask inspection apparatus 1000 of this embodiment, the size of the light Bc from the light source 100 may have an initial width W0. For example, the initial width (W0) may be hundreds of μm to several mm or less. Of course, the size of light Bc from the light source 100 is not limited to the above values. Meanwhile, in the EUV mask inspection apparatus 1000 of this embodiment, the light Bc from the light source 100 may be light that travels in a straight line and does not spread significantly, like a laser.

The light source 100 may be a plasma-based light source, such as a Laser-Produced Plasma (LPP) light source or a Discharge-Produced Plasma (DPP) light source. A plasma-based light source may refer to a light source that generates plasma and uses light emitted by the plasma. The LPP light source generates plasma by irradiating a strong laser to a specific material, and the DPP light source can generate plasma by flowing a large current pulse between electrodes in a specific gas environment. The DPP light source is also called a gas plasma type, and can be implemented at a lower cost than the LPP light source.

In the EUV mask inspection apparatus 1000 of this embodiment, the light source 100 may be a DPP light source. Accordingly, the EUV mask inspection device 1000 of this embodiment can contribute to lowering the unit cost of EUV mask manufacturing equipment based on the low-cost light source 100. Additionally, it can contribute to reducing the manufacturing cost of EUV masks. However, in the EUV mask inspection device 1000 of this embodiment, the type of light source 100 is not limited to the DPP light source.

The linear zone plate 200 converts the light Bc from the light source 100 into line-shaped light (see Bl in FIG. 2B or 2C, hereinafter, 'line-shaped light' is referred to as 'line light'). Can be printed. The linear zone plate 200 can convert the incident light (Bc) into line light (Bl) through a diffraction phenomenon and output it. The structure and function of the linear zone plate 200 will be described in more detail in the description of FIGS. 2A to 2C.

The slit plate 300 can block and output high-order diffraction light components in the line light Bl from the linear zone plate 200. Here, the high-order diffraction light component may mean a diffraction light component of ±1st order or higher. However, the high-order diffracted light component is not limited to the above values. Line light Bls from which high-order diffraction light components are removed by the slit plate 300 may be irradiated onto the EUV mask 2000. A photograph (Ils) of the line light (Bls) irradiated through the slit plate 300 is shown in the EUV mask 2000 portion. The structure and function of the slit plate 300 will be described in more detail in the description of FIGS. 3A to 3C.

The stage 400 is a device on which the EUV mask 2000, which is an inspection target, is placed, and can support the EUV mask 2000. Additionally, the stage 400 moves in the first direction (x direction) and the second direction (y direction) on the x-y plane, as indicated by both arrows M1 and M2, thereby moving the EUV mask 2000 on the x-y plane. It can be moved in the first direction (x direction) and the second direction (y direction). Depending on the embodiment, the stage 400 may also move in the third direction (z direction).

By moving the EUV mask 2000 in the first direction (x direction) and the second direction (y direction) on the x-y plane through the stage 400, the light Bls output from the slit plate 300 is transmitted through the EUV mask ( 2000) can be investigated in its entirety. In other words, during the inspection process of the EUV mask 2000, the entire EUV mask 2000 can be scanned by moving the stage 400.

Meanwhile, the EUV mask 2000 may be one of a blank mask, a patterned mask, and a pellicle-coated mask.

The blank mask is a mask on which no pattern is formed, and may have a structure in which a reflective multilayer film for reflecting EUV is formed on a substrate formed of a low thermal expansion coefficient material (LTEM) such as quartz. Here, the reflective multilayer film may have a structure in which, for example, molybdenum films (Mo layers) and silicon films (Si layers) are alternately stacked in dozens or more layers.

The patterned mask may include a structure in which an absorption layer pattern is formed on a reflective multilayer film. The absorption layer may be formed of a material with high absorption of EUV. The absorption layer may be formed of, for example, TaN, TaNO, TaBO, Ni, Au, Ag, C, Te, Pt, Pd, Cr, etc. However, the material of the absorption layer is not limited to the above materials. Meanwhile, a buffer layer may be formed on the reflective multilayer film to protect the reflective multilayer film. The buffer layer may be formed of, for example, SiO ₂ , SiON, Ru, C, Cr, CrN, etc. However, the material of the buffer layer is not limited thereto.

The pellicle-coated mask may include a pellicle attached to the patterned mask. By covering the upper surface of the mask, the pellicle can prevent impurity particles from contaminating the pattern on the mask.

In the process of inspecting the EUV mask 2000, in the case of a blank mask, for example, the structure of the reflective multilayer film or the reflectivity characteristics may be inspected. Additionally, in the case of a patterned mask, defects such as defects in the shape or size of the absorption layer pattern or inflow of foreign substances may be inspected. Meanwhile, in the case of a mask with a pellicle applied, defects such as poor application of the pellicle or inflow of foreign substances can be inspected.

The detector 500 may detect light reflected from the EUV mask 2000. The detector 500 may be, for example, any one of a line scan camera, a time-delayed integration (TDI) camera, a 2D camera, a one-pixel detector, and a photo-diode array (PDA) detector. there is. When the size of light reflected from the EUV mask 2000 is large, the detector 500 may be implemented with, for example, a line scan camera, a TDI camera, or a 2D camera. In the EUV mask inspection device 1000 of this embodiment, the detector 500 may be a TDI camera. For reference, a TDI camera is a camera that contains a number of line-shaped pixels. It takes several pictures of the object to be photographed at predetermined time intervals and obtains a clear image by overlapping the images obtained through each shot. can do.

Meanwhile, generally, in the case of a camera, an amplifier and an ADC (Analog-Digital Converter) may be included inside. However, for one-pixel detectors or PDA detectors, amplifiers and ADCs may not be included. Accordingly, when the detector 500 is a one-pixel detector or a PDA detector, an amplifier and an ADC may be additionally connected to the detector 500 and disposed.

The analysis device 600 is connected to the detector 500 and can receive and analyze the optical signal detected by the detector 500, for example, line light reflected from the EUV mask 2000. Here, the optical signal used for analysis may be an optical signal that has passed through an amplifier and an ADC. Through analysis by the analysis device 600, it can be determined whether a defect exists in the EUV mask 2000. The analysis device 600 may be, for example, a general personal computer (PC), workstation, supercomputer, etc. equipped with an analysis process. Depending on the embodiment, the analysis device 600 may be integrally combined with the detector 500 to form detection equipment.

The EUV mask inspection device 1000 of this embodiment converts the light from the light source 100 into line light using the linear zone plate 200, and also removes high-order diffraction light components from the line light through the slit plate 300. can do. In this way, by using the linear zone plate 200 and the slit plate 300, light efficiency can be increased and a clear image can be detected when inspecting the EUV mask 2000. In other words, when a slit plate is simply used to create line light, most of the light is blocked by the body portion of the slit plate and only a portion passes through the slit, resulting in very low light efficiency. On the other hand, the EUV mask inspection device 1000 of this embodiment uses the linear zone plate 200 to condense line light, so most of the incident light is maintained, so light efficiency can be very high. Additionally, since only high-order diffraction light components are removed using the slit plate 300, a clear image can be obtained while maintaining high light efficiency.

Meanwhile, the EUV mask inspection device 1000 of this embodiment generates line light using the linear zone plate 200 and moves the EUV mask 2000 by moving the stage 400, thereby forming a line scan camera, Alternatively, the EUV mask 2000 can be imaged as a line scan image using a TDI camera, and accordingly, the EUV mask 2000 can be inspected at high speed. For reference, light from the light source 100 can be made into a circular spot using a lens or circular zone plate. However, when inspecting the EUV mask 2000 using the light of such a circular spot, there is a problem in that it is difficult to inspect the EUV mask 2000 at high speed because it is impossible to capture a line scan image.

As a result, the EUV mask inspection device 1000 of this embodiment has high light efficiency and clear images by using the linear zone plate 200, the slit plate 300, the stage 400, and the detector 500 of the TDI camera. can be obtained and the EUV mask (2000) can be inspected precisely and at high speed.

FIG. 2A is a plan view of a linear zone plate in the EUV mask inspection device of FIG. 1, FIG. 2B is a conceptual diagram showing the phenomenon of light condensing through the linear zone plate of FIG. 2A, and FIG. 2C is a linear zone plate of FIG. 2A. This is a conceptual diagram showing the form of light output through .

2A to 2C, in the EUV mask inspection device 1000 of this embodiment, the linear zone plate 200 has a metal line 210 through which light is blocked and a plurality of through holes H through which light passes. It can be included. The linear zone plate 200 can convert light Bc incident from a light source (see 100 in FIG. 1) into line light Bl using a diffraction phenomenon.

The through hole H is defined by the metal line 210 and may have a line shape extending in the first direction (x direction). For example, the through hole H may have a rectangular structure elongated in the first direction (x direction). The metal lines 210 are connected to each other through the partition wall (PW) between the through holes (H), so that they can have a structure in which the entire metal line 210 is connected as one. The first plate width W11 in the first direction (x direction) of the linear zone plate 200 and the second plate width W12 in the second direction (y direction) are the light (Bc) incident from the light source 100. It can have a size that can sufficiently accommodate.

For reference, to briefly explain the principle of creating line light using a linear zone plate, the linear zone plate basically has a structure of alternating transparent and opaque lines, and the light passing through the linear zone plate is opaque. It diffracts around one line. At this time, line light can be created by adjusting the spacing between lines so that the diffracted light is concentrated at a line-shaped focus through light compensating interference.

In the EUV mask inspection apparatus 1000 of this embodiment, the metal line 210 of the linear zone plate 200 may correspond to an opaque line, and the through hole H may correspond to a transparent line. In addition, the linear zone plate 200 has a width in the second direction (y-direction) of the through-hole H located in the center portion of the through-hole H located in the outer portion along the second direction (y-direction). It may be larger than the width in the second direction (y direction). As can be seen in FIG. 2A, the width of the through hole H in the second direction (y direction) may become smaller as it moves from the center to the outer portion along the second direction (y direction).

Meanwhile, in order to maintain the overall shape of the linear zone plate 200, the metal lines 210 may be connected to each other through the partition wall (PW). However, depending on the embodiment, the linear zone plate may be implemented with a structure in which metal lines 210 are arranged on a transparent support substrate. In such structures, partition walls may be omitted. Additionally, depending on the embodiment, the opaque line is not limited to metal and may be formed of other materials that can block or absorb light.

As can be seen in FIG. 2C, the line-shaped light (Bl) created by passing through the linear zone plate 200 includes not only the basic light component (Bl0), which is the 0th-order diffraction light component, but also the higher-order diffraction light components (±Bl1, ±Bl2, . ..) may be included. These high-order diffracted light components (±Bl1, ±Bl2, ...) may act as noise when the detector 500 obtains a clear image of the inspection portion of the EUV mask 2000. Therefore, high-order diffracted light components (±Bl1, ±Bl2, ...) need to be removed. In the EUV mask inspection apparatus 1000 of this embodiment, high-order diffraction light components can be blocked in the line light Bl of the linear zone plate 200 using the slit plate 300 described below.

FIG. 3A is a top view of the slit plate in the EUV mask inspection device of FIG. 1, FIG. 3B is a conceptual diagram showing the phenomenon of light blocking high-order diffraction light components through the slit plate of FIG. 3A, and FIG. 3C is a view of the slit plate of FIG. 3A. This is a conceptual diagram showing the form of light output through a slit plate.

Referring to FIGS. 3A to 3C , in the EUV mask inspection apparatus 1000 of this embodiment, the slit plate 300 may include a body 310 and a slit (S). The slit plate 300 may block high-order diffracted light components in the line light Bl from the linear zone plate 200. For example, the slit plate 300 may block diffracted light components of ±1st order or higher in the line light Bl from the linear zone plate 200. Accordingly, the slit plate 300 can output line light Bls in which only the basic light component B10 exists. Meanwhile, the high-order diffraction light components removed by the slit plate 300 are not limited to diffraction light components of ±1st order or higher. For example, depending on the embodiment, diffracted light components of order ±2 or higher may be removed by the slit plate 300. Additionally, depending on the embodiment, the basic light component Bl0 may also be removed by the slit plate 300, and the shape of the slit S may be changed so that only diffracted light components of a specific order are output.

The body 310 of the slit plate 300 may be formed of metal. However, the material of the body 310 is not limited to metal. For example, the body 310 may be formed of a material other than metal that can block or absorb light.

The slit S of the slit plate 300 may be formed in a line shape extending in the first direction (x direction) at the center of the body 310. For example, the slit S may have a rectangular shape elongated in the first direction (x direction). The first slit width W21 in the first direction (x-direction) of the slit S can sufficiently accommodate the width of the line light Bl in the first direction (x-direction) from the linear zone plate 200. It can be of any size. In addition, the second slit width W22 in the second direction (y direction) of the slit S is large enough to block high-order diffraction light components in the line light Bl from the linear zone plate 200. You can have it.

As can be seen in FIG. 3C, the line light (Bls) passing through the slit plate 300 has a basic light component (Bl0) of the line light (Bl) of the linear zone plate 200 and optionally a ±nth order diffraction light component. It can be included. Meanwhile, the width W3 of the line light Bls in the first direction (x direction) may correspond to the first slit width W21 of the slit S.

FIG. 4A is a structural diagram schematically showing an EUV mask inspection device according to an embodiment of the present invention, FIG. 4B is a structural diagram showing in more detail from the light source to the slit plate in the EUV mask inspection device of FIG. 4A, and FIG. 4C is a scan This is a cross-sectional view showing the mirror in more detail, and Figure 4D is a conceptual diagram showing the pixel portion of the detector in more detail. Contents already described in FIGS. 1 to 3C will be briefly explained or omitted.

4A to 4D, the EUV mask inspection device 1000a of this embodiment has a small size of the light Bcp of the light source 100a, further includes a scan mirror 700, and a detector 500. It may be different from the EUV mask inspection device 1000 of FIG. 1 in that it is a one-pixel detector. To be more specific, in the EUV mask inspection device 1000a of this embodiment, the light source 100a generates and outputs light (Bcp) in a circular shape, but may generate and output light (Bcp) of a small size. . For example, the size of the light Bcp from the light source 100a may have an initial width W0' of several to tens of μm. Of course, the size of light Bcp from the light source 100a is not limited to the above values.

In the EUV mask inspection device 1000a of this embodiment, since the size of the light Bcp of the light source 100a is small, the EUV mask ( 2000) There are limits to scanning the entire thing. Accordingly, the EUV mask inspection device 1000a of this embodiment may further include a scan mirror 700a. The scan mirror 700a may rotate to allow the light Bcp of the light source 100a to be irradiated while moving in the first direction (x direction), which is the scanning direction. Accordingly, the EUV mask 2000 may be scanned through movement of the light Bcp of the light source 100a in the first direction (x direction).

As can be seen in FIG. 4B, in the EUV mask inspection device 1000a of this embodiment, the linear zone plate 200a may have a larger size than the light Bcp of the light source 100a. For example, when the light Bcp of the light source 100a has an initial width W0' of several μm in the first direction (x direction), which is the scanning direction, the first direction of the linear zone plate 200a ( The first plate width (W11') in the x direction) may be on the order of tens to hundreds of ㎛. Of course, the size of the light Bcp of the light source 100a and the first plate width W11' of the linear zone plate 200a are not limited to the above values. 4A and 4B, a picture Icp of the light Bcp of the light source 100a is shown in the lower part of the light source 100a and the upper part of the linear zone plate 200a.

The second plate width W12' in the second direction (y direction) of the linear zone plate 200a may be large enough to sufficiently accommodate the light Bcp of the light source 100a. For example, since the light (Bcp) of the light source (100a) is circular light, the light (Bcp) of the light source (100a) has a size substantially the same as the first direction (x-direction) in the second direction (y-direction) rather than the scan direction. You can have Additionally, the second plate width W12' of the linear zone plate 200a may have a size several times the size of the light Bcp of the light source 100a. Of course, the size of the light Bcp of the light source 100a and the second plate width W12' of the linear zone plate 200a are not limited to the above values.

In the EUV mask inspection device 1000a of this embodiment, the light Bcp of the light source 100a may be made into line light through the linear zone plate 200a. However, since the size of the light Bcp of the light source 100a is small, small-sized line light may be generated through a portion of the linear zone plate 200a rather than the entire linear zone plate 200a. Additionally, when the light Bcp of the light source 100a moves by the scan mirror 700, small-sized line light may be created through another corresponding portion of the linear zone plate 200a. In this way, the light Bcp from the light source 100a is made into line light through the scan mirror 700 and the linear zone plate 200a and can move in the first direction (x direction).

Meanwhile, the slit S of the slit plate 300a may have a size corresponding to the movement of line light output from the linear zone plate 200a. For example, the first slit width W21' in the first direction (x direction) of the slit S may have a size that can sufficiently accommodate the movement of line light of the linear zone plate 200a. Additionally, the second slit width W22' in the second direction (y direction) of the slit S may have a size capable of removing high-order diffraction light components from the line light of the linear zone plate 200a. A photograph (Ilsp) of line light (Blsp) from which high-order diffraction light components have been removed is shown in the upper portion of the EUV mask 2000 in FIG. 4A and the lower portion of the slit plate 300a in FIG. 4B. Arrows on both sides of the picture (Ilsp) of the line light (Blsp) in FIG. 4B may mean that the line light (Blsp) moves by the scan mirror 700.

In the EUV mask inspection device 1000a of this embodiment, the light Bcp of the light source 100a is made into line light through the linear zone plate 200a, and the line light is transmitted in the scan direction through the scan mirror 700. Can move in direction 1 (x direction). In addition, the high-order diffraction light component of the line light is blocked through the slit plate 300a and irradiated to the EUV mask 2000, and is moved in the first direction (x direction), which is the scanning direction, through the scan mirror 700, thereby masking the EUV mask. (2000).

The scan mirror 700 may move the light Bcp and the corresponding line light Blsp of the light source 100a in the scan direction, that is, the first direction (x direction), through rotation. As can be seen through FIG. 4C, the scan mirror 700 may include a base film 710 and a reflective multilayer film 720 formed on the base film 710. The base film 710 may be formed of quartz. However, the material of the base film 710 is not limited to quartz. The reflective multilayer film 720 may have a structure in which several dozen layers of molybdenum films and silicon films are alternately stacked. For example, the scan mirror 700 may be implemented as a galvanomirror. The scan mirror 700 may have a structure and material similar to the blank mask described above. Of course, the structure or material of the scan mirror 700 is not limited thereto.

In the EUV mask inspection device 1000a of this embodiment, the detector 500a may be a one-pixel detector. The detector 500a may detect light reflected when the line light Blsp is irradiated to the EUV mask 2000. Meanwhile, in the EUV mask inspection device 1000a of this embodiment, the line light Blsp is moved in the first direction (x direction) by the scan mirror 700, and correspondingly, the line light Blsp is reflected from the EUV mask 2000. Light can travel in the first direction (x direction). Accordingly, the pixel in the detector 500a may have a size capable of detecting all of the line light Blsp moving in the first direction (x direction).

In more detail, the first pixel width W31 of the pixel 510 of the detector 500a in the first direction (x direction) detects all of the line light Blsp moved by the scan mirror 700. It can be of any size. In FIG. 4D, small squares within pixel 510 may correspond to line light Blsp. The seven lines of light (Blsp) appearing on the pixel 510 may correspond to optical signals output through the ADC 540 using a sampling signal. Of course, the number of line lights Blsp appearing in the pixel 510 is not limited to seven. For example, depending on the size of the pixel 510 and the sampling signal of the ACD 540, less than 6 line lights Blsp or more than 8 line lights Blsp may appear on the pixel 510.

Meanwhile, the second pixel width W32 in the second direction (y-direction) of the pixel 510 of the detector 500a is not related to the scanning direction, and therefore, the second pixel width W32 in the second direction (y-direction) of the line light Blsp is Anything larger than the width may be sufficient. However, in order to increase the stability of detection, the second pixel width W32 of the pixel 510 may be several times larger than the width of the line light Blsp in the second direction (y direction).

Meanwhile, in FIG. 4D, seven line lights Blsp appear at equal intervals within one pixel 510 of the detector 500a. However, depending on the embodiment, the line lights Blsp have different intervals. It may appear. As described above, the line light Blsp shown in FIG. 4D may correspond to an optical signal output through the ADC 540. The ADC 540 can convert the optical signal of the line light (Blsp) corresponding to the analog signal detected by the detector 500a into an optical signal corresponding to a digital signal using a predetermined sampling signal. Accordingly, depending on the sampling signal, the interval of the line light Blsp appearing on the pixel 510 may be uniform or non-uniform. The spacing of the line light Blsp will be described in more detail in the description of FIGS. 6A to 7B.

The EUV mask inspection device 1000a of this embodiment may include an amplifier 520 and an ADC 540 connected to the detector 500a at a rear end of the detector 500a. The amplifier 520 may amplify an optical signal, that is, an optical signal of line light Blsp detected by the detector 500a. The ADC 540 can convert an optical signal of line light (Blsp), which is an analog signal, into an optical signal of a digital signal. Generally, a camera includes an amplifier and an ADC, but a one-pixel detector or a PDA detector may not include an amplifier and an ADC. However, depending on the embodiment, the one-pixel detector or PDA detector may include an amplifier and an ADC.

In the EUV mask inspection device 1000a of this embodiment, when the size of the light Bcp of the light source 100a is small, a line light of a small size is created using the linear zone plate 200a, and the slit plate 300a is used. The high-order diffraction light component is removed using the scan mirror 700, and the line light Blsp is transferred to the EUV mask ( 2000) can be investigated while moving in the first direction (x direction). Therefore, the EUV mask 2000 can be inspected with substantially the same effect as the EUV mask inspection device 1000 of FIG. 1. For example, the linear zone plate 200a and the slit plate 300a are sized in the first direction (x direction) with the linear zone plate 200 and the slit plate 300 of the EUV mask inspection device 1000 of FIG. 1. When similar, the inspection time of the EUV mask 2000 may be increased by the amount multiplied by the scan time in the first direction (x direction) through the scan mirror 700. However, when scanning in the first direction (x direction) by the scan mirror 700 is performed mechanically and automatically, the increase in inspection time of the EUV mask 2000 may not be significant.

Figure 5 is a structural diagram schematically showing an EUV mask inspection device according to an embodiment of the present invention. Contents already described in FIGS. 1 to 4D will be briefly explained or omitted.

Referring to FIG. 5, in the EUV mask inspection device 1000b of this embodiment, the scan mirror 700a is a double-sided mirror, and an optical device 800 for time adjustment for uniformly outputting the movement of light by the scan mirror 700a It may be different from the EUV mask inspection device 1000a of FIG. 4A in that it further includes. Specifically, in the EUV mask inspection device 1000b of this embodiment, the scan mirror 700a may be a double-sided mirror in which reflection occurs on both sides. For example, the scan mirror 700a reflects the light Bcp of the light source 100a through one side and makes it enter the linear zone plate 200a, and also transmits the laser beam from the laser diode 810 through the other side. Light may be reflected and made incident on the condenser lens 820. The scan mirror 700a may be implemented by forming a reflective multilayer film (see 720 in FIG. 4C) on both sides of a base film (see 710 in FIG. 4C). Depending on the embodiment, the scan mirror 700a may be implemented in a structure where the base film is omitted.

Meanwhile, the EUV mask inspection device 1000b of this embodiment may further include an optical device 800 for time adjustment disposed on the other side of the scan mirror 700a. The optical device 800 for time adjustment may include a laser diode 810, a condensing lens 820, a grating plate 840, and a laser detector 850. The laser diode 810 can generate and output laser light. The condenser lens 820 can converge laser light onto the grating plate 840. Grids at equal intervals may be formed on the grid plate 840. The laser detector 850 can detect laser light output through the grating plate 840.

The EUV mask inspection device 1000b of this embodiment includes an optical device 800 for time adjustment, detects the laser light output through the laser detector 850 and passes between the gratings of the grating plate 840, and Laser light can be used as a sampling signal for the ADC (540). Accordingly, the movement of the light Bcp of the light source 100a and the resulting line light Blsp in the first direction (x direction) due to the rotation of the scan mirror 700a can be output uniformly. The principle of uniformly outputting the movement of light using the time control optical device 800 will be explained in more detail in the description of FIGS. 6A to 7B.

FIGS. 6A to 6C are conceptual diagrams to explain that in the EUV mask inspection device of FIG. 4A, movement of light due to rotation of the scan mirror becomes non-uniform.

Referring to FIGS. 6A to 6C , as shown in FIG. 6A , the light reflected by the scan mirror 700 may move between T1 and T2 as the scan mirror 700 rotates. Meanwhile, let us assume that the scan mirror 700 rotates at a constant cycle like a general pendulum. When the scan mirror 700 rotates at a constant cycle, the linear velocity of the light reflected from the scan mirror 700 at a certain position may have a sine waveform as shown in FIG. 6B. In other words, the direction of the light reflected from the scan mirror 700 changes to the opposite direction at the positions T1 and T2, so the linear speed becomes 0, and the linear speed may become the highest or lowest at the central position T0. Now, let's say that the ADC (see 540 in FIG. 5) converts the analog signal into a digital signal (hereinafter referred to as 'AD conversion') using sampling signals at the same time interval. The reflected light output through the ADC 540 may have different movement intervals on a straight line, as shown in FIG. 6C, based on the difference in linear speed. For example, in some sections, the movement interval of reflected light may gradually increase, and in other sections, the movement distance of reflected light may gradually decrease.

As a result, when the ADC 540 performs AD conversion with sampling signals at the same time interval, that is, at equal intervals, the line output through the ADC 540 due to the difference in the line speed of the line light Blsp Lights (Blsp) may not maintain equal spacing. Accordingly, the EUV mask 2000 may not be inspected uniformly. For reference, a method of directly rotating the scan mirror with equal time and rotation angles may be considered. However, in the case of such a method, there is a problem that accurate control of the scan mirror is difficult and time-consuming.

FIGS. 7A and 7B are conceptual diagrams to explain the principle of uniformly outputting light movement using a time adjustment optical device in the EUV mask inspection device of FIG. 5.

Referring to FIGS. 7A and 7B, the gratings of the grating plate 840 are arranged at equal intervals, and the laser light reflected from the scan mirror 700a is focused through a condenser lens (see 820 in FIG. 5) to form the grating plate 840. can be investigated. For convenience, the condenser lens is omitted in Figure 7a. As described above, the scan mirror 700a rotates at a certain period like a pendulum, and the laser light reflected from the scan mirror 700a moves in a straight line on the grating plate 840 by the rotation of the scan mirror 700a. You can.

Meanwhile, a laser detector (see 850 in FIG. 5) is disposed behind the grating plate 840, and the laser detector 850 can detect the laser light output through the gap between the gratings and check the time. . In Figure 7a, the times at which laser light was detected, τ0, τ1, ... τ6, etc., are displayed in the gaps between the grids. Therefore, when the ADC (see 540 in FIG. 5) performs AD conversion on the line light (Blsp) with a sampling signal having the detected time interval, the line light (Blsp) is output at the same interval as the grid spacing. can do. Additionally, when the time interval is doubled by τ0, τ2, τ4, τ6, etc., the line light Blsp can be output with the same interval corresponding to twice the grid spacing. FIG. 7B shows that by providing a difference between time intervals, the line light Blsp can be output with the same movement interval of d0.

Meanwhile, it is explained that the laser detector 850 checks the time at which the laser light is detected and uses the time interval for the sampling signal of the ADC 540, but this may be for convenience of understanding. In reality, the laser light acquired through the laser detector 850 can be used as a sampling signal of the ADC 540 without a separate check for the detection time of the laser light.

8 to 10B are structural diagrams schematically showing an EUV mask inspection device according to embodiments of the present invention. FIG. 10B is a structural diagram showing in more detail from the light source to the slit plate in the EUV mask inspection device of FIG. 10A. Contents already described in the description portion of FIGS. 1 to 4D will be briefly described or omitted.

Referring to FIG. 8, the EUV mask inspection device 1000c of this embodiment may be different from the EUV mask inspection device 1000a of FIG. 4A in that it includes a translation device 900 instead of the scan mirror 700. . Specifically, in the EUV mask inspection device 1000c of this embodiment, the light source 100a generates and outputs small-sized light (Bcp), the detector 500a is a one-pixel detector, and the amplifier 520 and the ADC ( 540) may be substantially the same as the EUV mask inspection device 1000a of FIG. 4A.

Meanwhile, in the EUV mask inspection device 1000a of FIG. 4A, the light Bcp from the light source 100a, including the scan mirror 700, is moved in the first direction (x direction), which is the scanning direction, in this embodiment. The EUV mask inspection device 1000c includes a parallel movement device 900 and scans the light Bcp by directly moving the light source 100a in parallel in the first direction (x direction) through the parallel movement device 900. It can be moved in the first direction (x direction).

The parallel movement device 900 can move the light source 100a continuously or discontinuously at predetermined time intervals. When the light source 100a is continuously moved, the time interval of the sampling signal of the ADC 540 can be appropriately determined by considering the moving speed of the light source 100a and the pixel size of the detector 500a. This is because the light source 100a moves in parallel and the linear speed of the light Bcp in the scanning direction is the same, so the same problem as in the previous embodiment using a scan mirror does not occur. Meanwhile, when the light source 100a is moved discontinuously, the time interval for moving the light source 100a can be used as the time interval of the sampling signal of the ADC 540.

Referring to FIG. 9, in the EUV mask inspection device 1000d of this embodiment, the light source 100b can directly move the light Bcp in the first direction (x direction), which is the scanning direction, as shown in FIG. 4A or FIG. It may be different from the EUV mask inspection devices (1000a, 1000c) in 8. Specifically, the EUV mask inspection device 1000d of this embodiment can directly move the light Bcp in the first direction (x direction), which is the scanning direction, through rotation of the light source 100a. In addition, in the EUV mask inspection device 1000d of this embodiment, similar to the EUV mask inspection device 1000a of FIG. 4A, the light source 100b generates and outputs a small size light (Bcp), and the detector 500a is a one-pixel detector and may include an amplifier 520 and an ADC 540.

Referring to FIGS. 10A and 10B, the EUV mask inspection device 1000e of this embodiment is different from the EUV mask inspection device 1000a of FIG. 4A in that it includes a scan mirror 700 and a translation device 950. , It may also be different from the EUV mask inspection device 1000c of FIG. 8. Specifically, in the EUV mask inspection device 1000e of this embodiment, the light source 100a generates and outputs small-sized light (Bcp), the detector 500a is a one-pixel detector, and the amplifier 520 and the ADC ( 540) may be substantially the same as the EUV mask inspection devices 1000a and 1000c of FIG. 4A or 8.

In addition, the EUV mask inspection device 1000e of this embodiment is similar to the EUV mask inspection device 1000a of FIG. 4A in that it includes a scan mirror 700, and in that it includes a parallel movement device 950. , may be similar to the EUV mask inspection device 1000c of FIG. 8. However, the EUV mask inspection device 1000e of this embodiment moves the scan mirror 700 by the parallel movement device 950 to transmit the light Bcp from the light source 100a in the first direction (x direction), which is the scanning direction. It may be different from the EUV mask inspection devices 1000a and 1000c of FIGS. 4A and 8 in that it moves to .

In other words, the EUV mask inspection device 1000e of this embodiment may be different from the EUV mask inspection device 1000a of FIG. 4A in that the scan mirror 700 does not rotate. In addition, the EUV mask inspection device 1000e of this embodiment is similar to the EUV mask inspection device 1000c of FIG. 8 in that the scan mirror 700 is moved in the first direction (x direction), which is the scanning direction, instead of the light source 100a. ) may be different.

The parallel movement device 950 may move the scan mirror 700 continuously or discontinuously at predetermined time intervals. When the scan mirror 700 is continuously moved, the time interval of the sampling signal of the ADC 540 can be appropriately determined by considering the movement speed of the scan mirror 700 and the pixel size of the detector 500a. This is because the scan mirror 700 moves in parallel and the linear speed of light (Bcp) in the scan direction is the same, so problems such as those of the EUV mask inspection device 1000a in 4a do not occur. Meanwhile, when the scan mirror 700 is moved discontinuously, the time interval for moving the scan mirror 700 can be used as the time interval of the sampling signal of the ADC 540.

In the EUV mask inspection device 1000e of this embodiment, the light source 100a is fixed and the scan mirror 700 moves in parallel in the first direction (x direction), and thus the light is transmitted to the linear zone plate 200a. It can be irradiated while moving stably in direction 1 (x direction). In addition, in the EUV mask inspection device 1000e of this embodiment, since the scan mirror 700 does not rotate, the optical device 800 for time adjustment as in the EUV mask inspection device 1000b of FIG. 5 is unnecessary, and , the scan mirror 700 does not need to be a double-sided mirror.

11 to 13 are flowcharts schematically showing an EUV mask inspection method according to embodiments of the present invention. The description will be made with reference to FIGS. 1 to 10B, and content already described in the description of FIGS. 1 to 10B will be briefly described or omitted.

Referring to FIG. 11, in the EUV mask inspection method of this embodiment, first, light (Bc, Bcp) is generated and output from the light sources (100, 100a, 100b) (S110). Here, the light (Bc, Bcp) has a circular light form and may be any one of short wavelength light, such as EUV, DUV, and X-ray. In addition, the light (Bc, Bcp) may be light of a relatively large size of several hundred μm to several mm, as in the EUV mask inspection device 1000 of FIG. 1, and is shown in FIGS. 4A, 5, 8, and 9. And, as in the EUV mask inspection devices 1000a, 1000b, 1000c, 1000d, and 1000e of FIG. 10A, the light may have a relatively small size of several to tens of μm.

Next, using the linear zone plates 200 and 200a, the light from the light sources 100, 100a and 100b is converted into line light Bl and output (S120). When the size of the light Bc from the light source 100 is large, the entire linear zone plate 200 is used to create a line light Bl with a large width in the first direction (x direction), and the light source 100a, When the size of the light Bcp from 100b) is small, line light with a small width can be created in the first direction (x direction) using a part of the linear zone plate 200a.

Thereafter, using the slit plate (300, 300a), the high-order diffraction light component is blocked in the line light (Bl) from the linear zone plate (200, 200a) and output (S130). Likewise, when the width of the line light Bl of the linear zone plate 200 is large, the entire slit S of the slit plate 300 is used to block the high-order diffraction light component of the line light Bl, and the linear When the width of the line light of the zone plate 200a is small, the high-order diffraction light component of the line light can be blocked using a portion of the slit S of the slit plate 300a.

The line light (Bls, Blsp) output from the slit plates (300, 300a) is irradiated to the EUV mask (2000), which is an inspection target, and the line light (Bls, Blsp) is detected (S140). For example, when the width of the line light (Bls) of the slit plate 300 is large, the line light (Bls) reflected from the EUV mask 2000 can be detected using the detector 500 implemented as a TDI camera. . Meanwhile, when the width of the line light (Blsp) of the slit plate (300a) is small, the line light (Blsp) reflected from the EUV mask 2000 is transmitted in the first direction using the detector (500a) implemented as a one-pixel detector. It can be detected while scanning in the (x direction).

Although not shown, the line light Bls and Blsp detected by the detectors 500 and 500a may be analyzed by the analysis device 600 to determine whether defects exist in the EUV mask 2000. Meanwhile, the EUV mask 2000 to be inspected may be a blank mask, a patterned mask, or a mask on which a pellicle is to be applied.

Referring to FIG. 12, the EUV mask inspection method of this embodiment first performs the steps from the step of generating and outputting light (S110) to the step of detecting line light (S140). The contents from the step of generating and outputting light (S110) to the step of detecting line light (S140) are the same as described in the EUV mask inspection method of FIG. 11.

Next, it is determined whether the entire EUV mask 2000 has been scanned (S150). If the entire EUV mask 2000 is not scanned (No), the stage 400 is moved to move the EUV mask 2000 (S160). The stage 400 can move in the first direction (x direction) and the second direction (y direction) on the x-y plane. By moving the stage 400, the EUV mask 2000 can also move in the first direction (x direction) and the second direction (y direction) on the x-y plane. Afterwards, the process moves to the line light detection step (S140) and the line light is detected.

If the entire EUV mask 2000 is scanned (Yes), the EUV mask inspection method may be terminated. Meanwhile, before the end of the EUV mask inspection method, it can be determined whether a defect exists in the EUV mask 2000 through the analysis device 600.

Referring to FIG. 13, the EUV mask inspection method of this embodiment first performs a step (S110) of generating and outputting light. The step of generating and outputting light (S110) is the same as described in the EUV mask inspection method of FIG. 11.

Next, it is determined whether to perform a line scan in the first direction (x direction), which is the scan direction (S112). When performing a line scan (Yes), the scan mirrors 700 and 700a are rotated or moved in parallel to move the light (Bcp) of the light source 100a (S114). The light (Bcp) of the light source (100a) is transmitted in the first direction (x), which is the scan direction, by rotation of the scan mirrors (700, 700a) or parallel movement of the scan mirrors (700, 700a) in the first direction (x direction). direction) can be moved. For example, as in the EUV mask inspection devices 1000a, 1000b, 1000c, 1000d, and 1000e of FIGS. 4A, 5, 8, 9, and 10A, the size of the light Bcp from the light source 100a is small. In embodiments, line scan may be performed. However, in the case of an embodiment in which the size of the light Bc from the light source 100 is large, as in the EUV mask inspection apparatus 1000 of FIG. 1, line scanning does not need to be performed.

Meanwhile, instead of rotating or translating the scan mirrors 700 and 700a, the light source 100a is moved in parallel, as in the EUV mask inspection devices 1000c and 1000d of FIGS. 8 and 9, or the light source 100b is rotated. ) may be directly rotated to move the light (Bcp) in the first direction (x direction). Afterwards, the process can proceed to the step of outputting line light (S120). Additionally, even when line scanning is not performed (No), the process can proceed directly to the step of outputting line light (S120).

Afterwards, steps from outputting line light (S120) to moving the EUV mask (S160) can be performed. The step of outputting line light (S120) to the step of moving the EUV mask (S160) are the same as described in the EUV mask inspection method of FIGS. 11 and 12.

Figure 14 is a flowchart schematically showing an EUV mask manufacturing method using an EUV mask inspection method according to embodiments of the present invention. The description will be made with reference to FIGS. 1 to 10B, and content already described in the description of FIGS. 11 to 13 will be briefly described or omitted.

Referring to FIG. 14, the EUV mask manufacturing method of this embodiment first performs the steps from the step of generating and outputting light (S110) to the step of moving the EUV mask (S160). The contents from the step of generating and outputting light (S110) to the step of moving the EUV mask (S160) are the same as described in the EUV mask inspection method of FIGS. 11 and 12. Meanwhile, the EUV mask manufacturing method of this embodiment includes a step of determining whether to perform a line scan in the EUV mask inspection method of FIG. 13 (S112), and a step of moving the light (Bcp) of the light source 100a (S114). It may also include more.

Meanwhile, in the EUV mask manufacturing method of this embodiment, when the entire EUV mask 2000 is scanned (Yes), it is determined whether a defect exists in the EUV mask 2000 (S170). Here, the specifications of the EUV mask 2000 may vary depending on the type of EUV mask 2000. For example, in the case of a blank mask, defects such as the structure or reflectivity of the reflective multilayer film, in the case of a patterned mask, defects such as poor shape or size of the absorption layer pattern, or inflow of foreign substances, and in the case of a mask with a pellicle applied, the application of the pellicle. Defects such as defects or foreign matter inflow may be determined.

If a defect exists in the EUV mask 2000 (Yes), the EUV mask 2000 may be discarded or the defect may be removed from the EUV mask 2000 and the cause of the defect may be analyzed (S190).

Meanwhile, if there is no defect in the EUV mask 2000 (No), a subsequent process can be performed on the EUV mask 2000. For example, when the EUV mask 2000 is a blank mask, a patterning process may be performed on the EUV mask 2000. When the EUV mask 2000 is a patterned mask, a process of applying a pellicle to the EUV mask 2000 can be performed. Additionally, when the EUV mask 2000 is a mask on which a pellicle is applied, a process to finally complete the EUV mask 2000 can be performed. For example, the EUV mask 2000 can be loaded and stored, or documents such as completion date recording can be performed.

So far, the present invention has been described with reference to the embodiments shown in the drawings, but these are merely illustrative, and those skilled in the art will understand that various modifications and other equivalent embodiments are possible therefrom. will be. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the attached patent claims.

100, 100a, 100b: light source, 200, 200a: linear zone plate, 210: metal line, 300, 300a: slit plate, 310: body, 400: stage, 500, 500a: detector, 510: pixel, 520: amplifier, 540: ADC, 600: analysis device, 700, 700a: scanning mirror, 710: base film, 720: reflective multilayer film, 800: optical device for time control, 810: laser diode, 820: condensing lens, 840: grating plate, 850: Laser detector, 900: Translation device, 1000, 1000a ~ 1000d: EUV mask inspection device, 2000: EUV mask

Claims (20)

A light source that generates and outputs light;
a linear zone plate that outputs light from the light source as light in the form of a line extending in a first direction;
a slit plate that blocks and outputs high-order diffraction light components from the line-shaped light;
A stage where an EUV (Extreme Ultraviolet) mask to be inspected is placed;
a detector configured to detect light reflected when light from the slit plate is irradiated to the EUV mask;
a scan mirror that reflects light from the light source and makes it enter the linear zone plate while moving it in the first direction; and
It includes an optical device for uniformly outputting the movement of light in the first direction,
The optical device is,
It includes a laser diode that outputs laser light, a condensing lens that focuses the laser light reflected by the scan mirror onto a grid plate, the grid plate on which grids at equal intervals are formed, and a second detector that detects the laser light from the grid plate. EUV mask inspection device characterized in that. According to claim 1,
The linear zone plate is an EUV mask inspection device characterized in that it has a structure that converts the incident light through a diffraction phenomenon into the line-shaped light extending in the first direction. According to clause 2,
The linear zone plate includes a metal line through which light is blocked and a plurality of through holes defined by the metal line through which light passes,
The through hole has a line shape extending in the first direction,
EUV mask inspection device, characterized in that the width of the through hole located in the center in the second direction perpendicular to the first direction is greater than the width of the through hole located in the outer portion in the second direction in the second direction. According to claim 1,
A slit extending in the first direction is formed in the slit plate,
The slit has a first width corresponding to the width of the line-shaped light in the first direction, and blocks diffracted light components of ±1 order or more from the line-shaped light in a second direction perpendicular to the first direction. An EUV mask inspection device characterized by having a second width. According to claim 1,
The stage moves in the first direction and a second direction perpendicular to the first direction in a plane,
An EUV mask inspection device configured to scan the entire EUV mask by moving the stage. delete According to claim 1,
Move light in the first direction by rotating the scan mirror, or
EUV mask inspection device, characterized in that the light is moved in the first direction by parallel movement of the scan mirror. delete According to claim 1,
An EUV mask inspection device, wherein the light source is a plasma-based EUV light source. A light source that generates and outputs light;
a scan mirror that reflects and outputs light from the light source while moving it in a first direction;
a linear zone plate that outputs light from the scan mirror as light in the form of a line extending in the first direction;
a slit plate that blocks and outputs high-order diffraction light components from the line-shaped light;
a first detector that detects light reflected when light from the slit plate is irradiated to an EUV mask to be inspected; and
It includes an optical device for uniformly outputting the movement of light in the first direction,
The optical device is,
It includes a laser diode that outputs laser light, a condensing lens that focuses the laser light reflected by the scan mirror onto a grid plate, the grid plate on which grids at equal intervals are formed, and a second detector that detects the laser light from the grid plate. EUV mask inspection device characterized in that. According to claim 10,
The linear zone plate includes a metal line through which light is blocked and a plurality of through holes defined by the metal line and through which light passes, and has a structure that converts the incident light into the line-shaped light through a diffraction phenomenon. ,
The linear zone plate is characterized in that the EUV mask inspection device has a width that can cover the movement of light by the scan mirror in the first direction. According to claim 10,
A slit extending in the first direction is formed in the slit plate to block diffracted light components of ±1st order or higher from the line-shaped light,
The EUV mask inspection device is characterized in that the slit has a width that can cover the movement of light by the scan mirror in the first direction. According to claim 10,
An amplifier that amplifies the optical signal from the first detector,
ADC (Analog-Digital Converter) that converts analog signals into digital signals, and
An EUV mask inspection device further comprising an optical device for uniformly outputting movement of light in the first direction. According to claim 13,
The scan mirror is a double-sided mirror,
An EUV mask inspection device characterized in that the laser light passing between the gratings is detected through the second detector and used as a sampling signal of the ADC. Generating and outputting light from a light source;
In a linear zone plate, outputting light from the light source as light in the form of a line extending in a first direction;
blocking and outputting high-order diffraction light components from the line-shaped light at a slit plate; and
In a first detector, the light from the slit plate is irradiated to the EUV mask to be inspected and detects the reflected light,
When performing a line scan, the light from the light source is reflected through a scan mirror and incident on the linear zone plate while moving in the first direction,
Outputs the movement of light uniformly in the first direction through an optical device,
The optical device is,
It includes a laser diode that outputs laser light, a condensing lens that focuses the laser light reflected by the scan mirror onto a grid plate, the grid plate on which grids at equal intervals are formed, and a second detector that detects the laser light from the grid plate. EUV mask inspection method characterized in that. According to claim 15,
When moving light in the first direction by rotation of the scan mirror,
The scan mirror is a double-sided mirror,
An EUV mask inspection method, characterized in that the movement of light in the first direction is output uniformly using the optical device. Generating and outputting light from a light source;
In a linear zone plate, outputting light from the light source as light in the form of a line extending in a first direction;
blocking and outputting high-order diffraction light components from the line-shaped light at a slit plate; and
In a first detector, light from the slit plate is irradiated to an EUV mask to be inspected and the reflected light is detected;
In an analysis device, analyzing detected light to determine whether a defect exists in the EUV mask; and
When there is no defect in the EUV mask, performing a subsequent process on the EUV mask,
When performing a line scan, the light from the light source is reflected through a scan mirror and incident on the linear zone plate while moving in the first direction,
Outputs the movement of light uniformly in the first direction through an optical device,
The optical device is,
It includes a laser diode that outputs laser light, a condensing lens that focuses the laser light reflected by the scan mirror onto a grid plate, the grid plate on which grids at equal intervals are formed, and a second detector that detects the laser light from the grid plate. A method of manufacturing an EUV mask, characterized in that. delete According to claim 17,
An EUV mask manufacturing method, characterized in that light is incident while moving in the first direction by rotation or parallel movement of the scan mirror. According to claim 17,
The EUV mask is one of a blank mask, a patterned mask, and a pellicle-coated mask,
When the EUV mask is a blank mask, in performing the subsequent process, patterning is performed on the EUV mask,
When the EUV mask is a patterned mask, in performing the subsequent process, a pellicle is applied to the EUV mask,
When the EUV mask is a mask coated with a pellicle, the EUV mask is completed in the step of performing the subsequent process.

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