JP2011153903A - Pattern inspection device and pattern inspection method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method capable of detecting finer defects and at a higher speed. <P>SOLUTION: The pattern inspection device includes an X-ray source for generating an X-ray; a narrowing means for narrowing an X-ray emitted from the X-ray source into a point-shaped parallel light to irradiate a sample therewith; a mask for blocking direct light of the X-ray transmitted through the sample, and diffracted light of the X-ray diffracted by a pattern formed on the sample; a two-dimensional detector for detecting a two-dimensional pattern of the X-ray which is not blocked by the mask; a difference calculation means for calculating the difference of each two-dimensional pattern, acquired respectively by irradiating two corresponding spots of the sample with the point-shaped X-ray; and a determination means for determining the existence of a defect based on the difference. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an optical pattern inspection apparatus and a pattern inspection method.

  Until now, pattern inspection apparatuses and pattern inspection methods for detecting defects have been proposed. For example, an appearance inspection apparatus disclosed in Patent Document 1 includes a light source unit that illuminates a surface of a sample with illumination light including a P wave component and an S wave component, and reflection of a P wave component of reflected light reflected from the surface of the sample. A polarization unit that generates light and S wave component reflection, and an optical image of the sample by P wave and S wave component reflected light, respectively, and a P wave image signal by P wave component and an S wave image signal by S wave component And a difference detection unit that detects a difference between pixel values obtained by imaging two corresponding portions of the sample for each of the P wave image signal and the S wave image signal. Then, for each P-wave and S-wave image signal, the defect is detected by comparing one of the differences detected for the pixels at the same position, or a calculated value between both of the differences and a defect detection threshold.

  In another pattern inspection apparatus, for example, a sample is irradiated with light from a lamp, and reflected light reflected by the sample is imaged on a CCD (Charge Coupled Device) camera, and an image of the sample is obtained from the CCD image. . Alternatively, yet another pattern inspection apparatus scans the laser beam on the sample, captures the intensity of the reflected light reflected on the sample, and constructs an image of the sample from the detector signal corresponding to the laser scan position. To do. Alternatively, another pattern inspection apparatus is an apparatus called SEM (Scanning Electron Microscope), for example, which scans an electron beam on a sample and captures the generated secondary electrons with a detector, corresponding to the electron beam scanning position. An image of the sample is constructed from the detector signal.

  These pattern inspection apparatuses detect defects by an inspection method called a die-to-die method or a cell-to-cell method, for example. More specifically, these pattern inspection apparatuses capture the image of the sample at two corresponding locations of the sample (for example, the same pattern in the cell or between adjacent chips), and the difference between the corresponding pixel values of the two images And the defect is detected by determining whether or not the difference value is a certain value or more.

  In recent years, device miniaturization and pattern refinement have progressed, and along with this, defects generated in the manufacturing process have been miniaturized. One of the means for inspecting the miniaturized defect is to shorten the wavelength of light used in the inspection. However, the shortest wavelength of light used in the pattern inspection apparatus described above is 266 nm (nanometers). For this reason, the above-described pattern inspection apparatus has a necessary defect detection performance for a semiconductor device having an hp (half pitch) 3X to 2X nm design rule, but a necessary defect for a finer device. It may not have detection performance. That is, it is difficult for the pattern inspection apparatus described above to detect a defect (for example, a defect having a defect size of about 5 to 10 nm) that occurs in a device that is finer than the hp3X to 2Xnm design rule.

  On the other hand, the pattern inspection apparatus that scans an electron beam among the pattern inspection apparatuses described above uses an electron beam having a wavelength of several nanometers, and therefore has higher resolution and higher defect detection performance. However, in order for the pattern inspection apparatus to inspect the entire surface of the wafer, there is a problem that it takes a longer time than a pattern inspection apparatus using light.

JP 2007-78466 A

  The present invention has been made based on recognition of such a problem, and provides a pattern inspection apparatus and a pattern inspection method capable of detecting a finer defect at a higher speed.

  According to one aspect of the present invention, an X-ray source that generates X-rays, a diaphragm unit that irradiates the X-rays emitted from the X-ray source onto pointed parallel light onto a diaphragm sample, and the sample is transmitted. A mask for shielding the direct X-ray light and the X-ray diffracted light diffracted by the pattern formed on the sample, and a two-dimensional detector for detecting a two-dimensional X-ray pattern not shielded by the mask And a difference calculating means for calculating a difference between the two-dimensional patterns obtained by irradiating the corresponding two places of the sample with the point-shaped X-rays, and a determination for determining the presence or absence of a defect based on the difference And a pattern inspection apparatus.

  According to another aspect of the present invention, an X-ray source that generates X-rays, and a diaphragm unit that irradiates the X-ray emitted from the X-ray source onto a diaphragm sample with point-shaped parallel light; A mask that shields X-ray direct light transmitted through the sample and X-ray diffracted light diffracted by a pattern formed on the sample, and a zone plate that collects X-rays not shielded by the mask; An X-ray detector for detecting the intensity of the condensed X-ray, and a difference calculating means for calculating a difference between the detected intensity by irradiating the corresponding two points of the sample with the point-shaped X-ray And a determination unit that determines the presence or absence of a defect based on the difference.

  Further, according to another aspect of the present invention, an X-ray source that generates X-rays, and a diaphragm unit that irradiates a line sample with X-rays emitted from the X-ray source onto a parallel sample, A mask that shields X-ray direct light transmitted through the sample and X-ray diffracted light diffracted by a pattern formed on the sample, and a zone plate that collects X-rays not shielded by the mask; , A one-dimensional detector for detecting the intensity of the condensed X-ray, and a difference calculating means for calculating a difference between the detected intensity by irradiating the corresponding two portions of the sample with the line-shaped X-ray. And a determination unit that determines the presence or absence of a defect based on the difference.

  According to another aspect of the present invention, an X-ray source for generating X-rays, and an aperture for irradiating the X-rays emitted from the X-ray source into point-shaped parallel light on the aperture sample at a shallow angle X-ray direct light reflected on the surface of the sample, a mask that shields X-ray diffracted light diffracted by the pattern formed on the sample, and an X-ray that is not shielded by the mask A two-dimensional detector for detecting a two-dimensional pattern; difference calculating means for calculating a difference between the two-dimensional patterns respectively obtained by irradiating two corresponding points of the sample with the point-shaped X-ray; and the difference And a determination means for determining the presence or absence of a defect based on the above.

  Further, according to another aspect of the present invention, X-rays are generated and emitted, and the emitted X-rays are irradiated onto the diaphragm sample with point-shaped parallel light and transmitted through the sample. The direct light and the X-ray diffracted light diffracted by the pattern formed on the sample are shielded, the two-dimensional pattern of the unshielded X-ray is detected, and the point-like shape is detected at two corresponding positions of the sample. A pattern inspection method is provided, wherein a difference between the two-dimensional patterns acquired by irradiating X-rays is calculated, and the presence or absence of a defect is determined based on the difference.

  Further, according to another aspect of the present invention, X-rays are generated and emitted, and the emitted X-rays are irradiated onto the diaphragm sample with point-shaped parallel light and transmitted through the sample. The direct light and the X-ray diffracted light diffracted by the pattern formed on the sample are shielded, the unshielded X-ray is collected, the intensity of the collected X-ray is detected, and the sample is detected. A pattern inspection method is provided, wherein the difference between the detected intensities is calculated by irradiating the corresponding two points with the point-shaped X-rays, and the presence or absence of a defect is determined based on the difference. The

  Further, according to another aspect of the present invention, X-rays are generated and emitted, the emitted X-rays are irradiated onto a diaphragm sample with line-shaped parallel light, and the X-rays transmitted through the sample are irradiated. The direct light and the X-ray diffracted light diffracted by the pattern formed on the sample are shielded, the unshielded X-ray is collected, the intensity of the collected X-ray is detected, and the sample is detected. A pattern inspection method is provided, in which a difference between the detected intensities is calculated by irradiating two corresponding locations of the line X-rays, and the presence or absence of a defect is determined based on the difference. The

  Further, according to another aspect of the present invention, X-rays are generated and emitted, and the emitted X-rays are irradiated to the pointed parallel light at a shallow angle on the aperture sample, and on the surface of the sample. The reflected X-ray direct light and the X-ray diffracted light diffracted by the pattern formed on the sample are shielded, and the two-dimensional pattern of the unshielded X-ray is detected, and the corresponding sample There is provided a pattern inspection method characterized by calculating a difference between the two-dimensional patterns acquired by irradiating the point-like X-rays at two locations and determining the presence or absence of a defect based on the difference. .

  Further, according to another aspect of the present invention, X-rays are generated and emitted, and the emitted X-rays are irradiated to the pointed parallel light at a shallow angle on the aperture sample, and on the surface of the sample. The reflected X-ray direct light and the X-ray diffracted light diffracted by the pattern formed on the sample are shielded, the unshielded X-ray is condensed, and the intensity of the condensed X-ray is collected. , The point-like X-rays are irradiated to two corresponding locations of the sample, the difference between the detected intensities is calculated, and the presence or absence of a defect is determined based on the difference. A pattern inspection method is provided.

  Further, according to another aspect of the present invention, X-rays are generated and emitted, and the emitted X-rays are irradiated onto the parallel sampled light at a shallow angle to the line-shaped parallel light. The reflected X-ray direct light and the X-ray diffracted light diffracted by the pattern formed on the sample are shielded, the unshielded X-ray is condensed, and the intensity of the condensed X-ray is collected. , The difference between the detected intensities is calculated by irradiating two corresponding portions of the sample with the line-shaped X-rays, and the presence or absence of a defect is determined based on the difference. A pattern inspection method is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the pattern inspection apparatus and pattern inspection method which can detect a finer defect more rapidly are provided.

It is a perspective schematic diagram showing the pattern inspection apparatus concerning embodiment of this invention. It is a plane schematic diagram which illustrates the means to squeeze the X-rays emitted from the X-ray source of this embodiment in parallel. It is a schematic diagram which illustrates the defect determination method of this embodiment. It is a schematic diagram which illustrates the defect determination method concerning a comparative example. It is a perspective schematic diagram showing the pattern inspection apparatus concerning other embodiment of this invention. It is a perspective schematic diagram showing the pattern inspection apparatus concerning further another embodiment of this invention. It is a perspective schematic diagram showing the pattern inspection apparatus concerning further another embodiment of this invention. It is a perspective schematic diagram showing the pattern inspection apparatus concerning further another embodiment of this invention. It is a perspective schematic diagram showing the pattern inspection apparatus concerning further another embodiment of this invention. It is a perspective schematic diagram showing the pattern inspection apparatus concerning further another embodiment of this invention.

Embodiments of the present invention will be described below with reference to the drawings. In addition, in each drawing, the same code | symbol is attached | subjected to the same component and detailed description is abbreviate | omitted suitably.
FIG. 1 is a schematic perspective view showing a pattern inspection apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic plan view illustrating a means for concentrating X-rays emitted from the X-ray source of this embodiment in parallel.
2A is an enlarged schematic view of the aperture means of the present embodiment, and FIG. 2B is an enlarged view of the aperture means according to the modification of the present embodiment. It is an enlarged schematic diagram.

The pattern inspection apparatus according to the present embodiment includes an X-ray source 100, a diaphragm unit 200, a mask 300, a two-dimensional detector 400, a difference calculation unit 510, and a determination unit 520.
A sample 800 shown in FIG. 1 is, for example, a substrate (wafer) on which a pattern such as L / S (line and space) is formed. Alternatively, the sample 800 may be a mask used for fine processing such as photolithography.

  The X-ray source 100 can generate X-rays. More specifically, the X-ray source 100 can generate and emit hard X-rays having a wavelength of about 0.1 nm or less, or soft X-rays having a wavelength of about 1 to several tens of nm. In addition, since hard X-rays are not easily absorbed by air and can be observed in the air, it is more preferable to use hard X-rays in the present embodiment. However, the present invention is not limited to hard X-rays. For example, soft X-rays may be used as long as the surrounding environment can be evacuated by providing a chamber or the like.

  As shown in FIG. 2A, the diaphragm unit 200 has a point-shaped slit 210 and can collimate the X-rays 110 emitted from the X-ray source 100 in parallel. A tapered portion 220 is formed on the emission side of the slit 210. The angle b (see FIG. 1) of the tapered portion 220 of the present embodiment is, for example, about 7 degrees or less. Thereby, the aperture means 200 can suppress scattering of the X-rays 110 that have passed through the slit 210. The pattern inspection apparatus according to the present embodiment includes two diaphragm means 200 as shown in FIGS. 1 and 2A. Thereby, the scattering of the X-rays 110 that have passed through the slits 210 of the two aperture means 200 is suppressed as compared with the case where the X-rays 110 have passed through the slits 210 of the aperture means 200. As a result, the X-rays 110 that have passed through the slits 210 of the two diaphragm means 200 become point-shaped parallel light.

  In the pattern inspection apparatus according to the present embodiment, the beam diameter a (see FIG. 1) of the X-ray 110 that has passed through the slits 210 of the two diaphragm means 200 is, for example, about 10 μm (micrometer). In the pattern inspection apparatus shown in FIG. 1, the case where the two diaphragm units 200 are provided has been described as an example. However, the number of the diaphragm units 200 is not limited to this. The number of the aperture means 200 may be three or more, for example.

Furthermore, the means for turning the X-ray 110 into a point-like parallel light is not limited to this. The means for turning the X-ray 110 into point-shaped parallel light may be, for example, a multilayer mirror 200a as shown in FIG. Alternatively, the means for turning the X-ray 110 into a point-like parallel light may be a collimator or the like.
As will be described later, in the present embodiment, the X-ray 110 transmitted through the sample 800 is converted into X-ray pattern diffracted light 130 diffracted by the pattern, X-ray defect scattered light 140 scattered by the defect, Separate at different angles. Therefore, in the present embodiment, it is more preferable to use the diaphragm means 200 having the slit 210 to further suppress the spread of the angle due to scattering or the like.

  The mask 300 is diffracted by a direct light shielding portion 320 that can shield direct light (0th-order light) 120 transmitted through the sample 800 and a pattern such as L / S formed on the surface of the sample 800. And a pattern diffracted light shielding portion 330 that can shield the X-ray pattern diffracted light 130. That is, the mask 300 can shield the X-ray direct light 120 transmitted through the sample 800 and the X-ray pattern diffracted light 130 diffracted by the pattern formed on the sample 800. The shape of the mask 300, such as the size of the direct light shield 320 and the arrangement and size of the pattern diffracted light shield 330, is a Fourier analysis of the beam diameter of the direct light 120 and device patterns such as L / S and hole arrangement. Determined by. In the pattern inspection apparatus according to the present embodiment, the diffraction angle 2θ is, for example, about 5 degrees.

The two-dimensional detector 400 is, for example, a CCD (Charge Coupled Device), an imaging plate, or the like, and can detect a two-dimensional X-ray pattern that has passed through the mask 300, that is, not shielded by the mask 300. In the present embodiment, the pixel size of the two-dimensional detector 400 is, for example, about 50 μm. The size of the two-dimensional detector 400 is about 50 mm × 50 mm, for example. The distance L1 between the sample 800 and the two-dimensional detector 400 is about 300 mm (millimeters), for example.
The two-dimensional detector 400 is not limited to this, and may be a film sensitive to X-rays. That is, the two-dimensional detector 400 only needs to be capable of detecting an X-ray two-dimensional pattern. Then, as indicated by the arrow c shown in FIG. 1, the mask 300 is installed on the incident side of the two-dimensional detector 400, that is, on the X-ray source 100 side as viewed from the two-dimensional detector 400.

The difference calculation unit 510 calculates the difference between two corresponding two-dimensional patterns obtained by irradiating two corresponding points of the sample 800 (for example, the same pattern in a cell or adjacent chips) with X-rays.
The determination unit 520 determines the presence / absence of a defect based on the difference calculated by the difference calculation unit 510.

Next, the pattern inspection method according to the present embodiment will be described.
First, X-rays are generated in the X-ray source 100, and the X-rays 110 are emitted from the X-ray source 100 toward the aperture means 200. The X-ray 110 emitted from the X-ray source 100 becomes point-shaped parallel light by the aperture means 200. Then, by appropriately arranging the X-ray source 100, the diaphragm means 200, and the sample 800, the sample 800 is irradiated with the X-ray 110 that has become point-like parallel light.

  The X-ray 110 irradiated to the sample 800 passes through the sample 800. At this time, the X-rays 110 that pass through the sample 800 are scattered by a pattern or a defect on the sample 800. More specifically, the X-ray 110 transmitted through the sample 800 includes the X-ray pattern diffracted light 130 diffracted by the pattern formed on the sample 800, and a short circuit, conduction, depletion, or the like generated during the device manufacturing process. It is separated into X-ray defect scattered light 140 scattered by defects such as foreign matter remaining. Further, the X-rays 110 that pass through the sample 800 have direct light 120 of X-rays that pass through the sample 800 without being scattered.

  Then, the X-ray transmitted through the sample 800 forms a two-dimensional pattern on the two-dimensional detector 400. Of the X-rays forming the two-dimensional pattern, the direct light 120 and the pattern diffracted light 130 are shielded by the mask 300 provided on the incident side of the two-dimensional detector 400. That is, the direct light 120 is shielded by the direct light shielding part 320 of the mask 300, and the pattern diffracted light 130 is shielded by the pattern diffracted light shielding part 330 of the mask 300.

  Subsequently, the X-rays not shielded by the mask 300, that is, the defect scattered light 140 scattered by the defect is detected by the two-dimensional detector 400. Subsequently, by moving the optical system such as the X-ray source 100 or the sample 800, X-rays 110 are irradiated to other portions on the sample 800. Then, the difference calculation unit 510 calculates the difference between the two-dimensional patterns acquired by irradiating two corresponding positions of the sample 800 with the X-ray 110. Then, the determination unit 520 determines the presence / absence of a defect based on the difference calculated by the difference calculation unit 510. Thereby, the defect which arose on the sample 800 is detectable.

Next, an example of steps performed in the difference calculation unit 510 and the determination unit 520 will be described with reference to the drawings.
FIG. 3 is a schematic view illustrating the defect determination method of this embodiment.
FIG. 4 is a schematic view illustrating the defect determination method according to the comparative example.
FIG. 4 is a schematic view illustrating a defect determination method based on a difference in optical images.

FIG. 3A is a cross-sectional view of a sample 800 that is an object to be inspected. As shown in FIG. 3A, the sample 800 has L / S (line and space) used for a semiconductor element or the like. The sample 800 has a base film U, and the thickness (base film thickness; hereinafter, simply referred to as “film thickness”) is T.
FIG. 3B is a schematic plan view of a sample 800 as an object to be inspected as viewed from above. There is no defect in this L / S.

  FIG. 3E is a schematic plan view showing a two-dimensional pattern formed on the two-dimensional detector 400 by X-rays transmitted through the sample 800 shown in FIG. That is, FIG. 3E is a diffraction image (Fourier transform image) obtained by applying Fourier transform to the sample 800 shown in FIG. When no defect exists, a two-dimensional pattern is formed by the direct light 120 and the pattern diffracted light 130 diffracted by the L / S pattern as shown in FIG. As described above with reference to FIG. 1, the direct light 120 and the pattern diffracted light 130 are shielded by the mask 300. This signal is used as an initial signal.

On the other hand, FIG. 3C is a schematic plan view of the sample 800 viewed from above when a short defect (defect that can cause an electrical short circuit) exists on the L / S.
FIG. 3D shows an actual image obtained by a scanning electron microscope (SEM).
FIG. 3F is a schematic plan view showing a two-dimensional pattern formed on the two-dimensional detector 400 by X-rays transmitted through the sample 800 shown in FIG. That is, FIG. 3F is a diffraction image (Fourier transform image) obtained by applying Fourier transform to the sample 800 shown in FIG. When there is a defect, as shown in FIG. 3F, the direct light 120, the pattern diffracted light 130 diffracted by the L / S pattern, the defect scattered light 140 scattered by the defect, Thus, a two-dimensional pattern is formed. Of these X-rays, the direct light 120 and the pattern diffracted light 130 are shielded by the mask 300 as described above.

  After the difference calculation means 510 acquires the X-ray signal that is not shielded by the mask 300 when there is no defect and the X-ray signal that is not shielded by the mask 300 when there is a defect, Then, the difference between the intensities of both signals is calculated. Then, the determination unit 520 determines the presence / absence of a defect based on the difference calculated by the difference calculation unit 510.

  On the other hand, in the defect determination method according to the comparative example shown in FIG. 4, the sample 800 is irradiated with light, and the reflected light reflected from the sample 800 is imaged on a CCD camera or the like. Get the image. The light irradiated on the sample 800 is, for example, white light emitted from a mercury lamp or a laser.

FIG. 4E is a schematic plan view schematically showing an optical image when FIG. 4B is imaged. This signal is used as an initial signal.
On the other hand, FIG. 4F is a schematic plan view schematically showing an optical image when FIG. 4C is imaged.
4A to 4D are as described above with reference to FIGS. 3A to 3D, respectively.

  After obtaining the signal intensities shown in FIGS. 4E and 4F, the difference between the intensities of both signals is calculated as shown in FIG. 4G. FIG. 4H is a graph showing the difference in signal intensity with respect to the L / S parallel direction (X-axis direction) as a pixel value. In the graph shown in FIG. 4H, it is determined that there is a defect in the portion exceeding the threshold.

  However, as device miniaturization and pattern refinement progress, defect miniaturization progresses accordingly. In this case, when the size of the defect with respect to the wavelength of light applied to the sample 800 is reduced, the amount of light scattered from the defect is reduced. Therefore, the difference in reflectance due to the presence or absence of defects is reduced, and the signal contrast may be reduced. That is, in the defect determination method according to the comparative example shown in FIG. 4, it may be difficult to detect a defect as device miniaturization and pattern refinement progress.

  Although not shown, there is a method of scanning the electron beam on the sample, capturing the generated secondary electrons with a detector, and acquiring an image of the sample from the detector signal corresponding to the electron beam scan position. In this method, since an electron beam having a wavelength of several nanometers is used, the resolution is higher and the defect detection performance is higher. However, in order to inspect the entire surface of the sample, a longer time is required than when white light emitted from a mercury lamp or a laser is used.

  In contrast, in the pattern inspection apparatus and pattern inspection method according to the present embodiment, the X-ray source 100 is used as a light source, and the sample 800 is irradiated with the X-rays 110 emitted from the X-ray source 100. The wavelength of X-rays is, for example, about 0.1 nm or less in the case of hard X-rays, and is about 1 to several tens of nm in the case of soft X-rays. Therefore, the pattern inspection apparatus according to the present embodiment has higher resolution and higher defect detection performance. In consideration of device miniaturization and pattern refinement in recent years, the wavelength of the X-ray 110 used is more preferably about 1 nm or less, for example.

  According to this, the defect scattered light 140 scattered by the defects on the sample 800 can be increased. Furthermore, noise other than the defect scattered light 140 can be reduced by shielding the direct light 120 transmitted through the sample 800 and the pattern diffracted light 130 diffracted by the pattern formed on the sample 800 with the mask 300. it can. Therefore, according to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, finer defects can be detected at higher speed.

  Further, for example, as shown by an arrow d shown in FIG. 1, the sample 800 may be obliquely irradiated onto the sample 800 by tilting the sample 800 with respect to the X-ray 110. That is, the pattern inspection apparatus according to the present embodiment may include tilting means that tilts at least one of the X-ray source 100 and the sample 800 and irradiates the sample 800 with the X-ray 110 obliquely. According to this, the intensity of the pattern diffracted light 130 and the defect scattered light 140 may increase depending on the pattern formed on the sample 800, the type of defects such as short circuit, conduction, depletion, and foreign matter remaining. In this case, a more sensitive defect inspection can be performed.

  In the present embodiment, an inspection method for comparing signals acquired from two corresponding positions of the sample 800, that is, a die-to-die method or a cell-to-cell method, etc. Although the called inspection method is illustrated, the pattern inspection method according to the present embodiment is not limited to this. The pattern inspection method according to the present embodiment is an inspection method in which, for example, reference data obtained by Fourier-transforming a desired pattern having no defect such as design data (CAD data) is generated and compared with the reference data, that is, die-to-die. An inspection method called a “die to database” method may be used.

  In the present embodiment, the case where the direct light 120 and the pattern diffracted light 130 are shielded by the mask 300 that is a shield has been described as an example. However, this is the only method for shielding the direct light 120 and the pattern diffracted light 130. It is not limited to. For example, after the direct light 120 and the pattern diffracted light 130 are detected by the two-dimensional detector 400, they may be shielded by performing data processing that ignores these signals. In other words, in the present specification, the range of “mask” includes not only a shield but also means for shielding X-rays by executing data processing. Even in this case, the same effect as described above can be obtained.

Next, another embodiment of the present invention will be described.
FIG. 5 is a schematic perspective view showing a pattern inspection apparatus according to another embodiment of the present invention. In the pattern inspection apparatus according to the present embodiment, as shown in FIG. 5, the zone plate 410 is installed at the position of the two-dimensional detector 400 of the pattern inspection apparatus described above with reference to FIG. An X-ray detector 530 is installed on the opposite side of the X-ray source 100 from the zone plate 410.

  The zone plate 410 can collect X-rays not shielded by the mask 300 on the X-ray detector 530 by using X-ray diffraction. Further, the X-ray detector 530 can detect the intensity of the X-ray 150 condensed by the zone plate 410. Other structures are the same as those of the pattern inspection apparatus described above with reference to FIGS.

In the pattern inspection apparatus according to the present embodiment, as the zone plate 410, for example, a zone plate having a size of φ5 mm and an outermost ring width (Δr _N ) of 50 nm is used, and the wavelength of the X-ray 110 is When X-rays having a wavelength of 0.15 nm are used, the NA (Numerical Aperture) of the optical system is 0.0015. In this case, the distance L3 between the zone plate 410 and the X-ray detector 530 is about 1.7 m. For example, if the diffraction angle 2θ is 5 degrees, the distance L2 between the sample 800 and the zone plate 410 is, for example, about 30 mm.

Next, the pattern inspection method according to the present embodiment will be described.
First, the pattern inspection method until the X-ray 110 passes through the sample 800 and reaches the mask 300 is the same as the pattern inspection method described above with reference to FIG.
Subsequently, the direct light 120 and the pattern diffracted light 130 are shielded by the mask 300 provided on the incident side of the zone plate 410.

  Subsequently, the X-rays that are not shielded by the mask 300, that is, the defect scattered light 140 scattered by the defects are diffracted by the zone plate 410, and on the X-ray detector 530 like the X-ray 150 shown in FIG. Condensed to Subsequently, by moving the optical system such as the X-ray source 100 or the sample 800, X-rays 110 are irradiated to other portions on the sample 800. Then, the difference calculation unit 510 calculates the difference in intensity between the two corresponding X-rays 150 of the sample 800 detected by the X-ray detector 530. Then, the determination unit 520 determines the presence / absence of a defect based on the difference calculated by the difference calculation unit 510. Thereby, the defect which arose on the sample 800 is detectable.

  According to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, X-rays that are not shielded by the mask 300 are condensed on the X-ray detector 530 by the zone plate 410, so that the X-ray is higher than the two-dimensional detector 400. Sensitive defect inspection can be performed. Moreover, the effect similar to the effect mentioned above regarding FIGS. 1-3 is acquired also about another effect.

Next, still another embodiment of the present invention will be described.
FIG. 6 is a schematic perspective view showing a pattern inspection apparatus according to still another embodiment of the present invention.
As shown in FIG. 6, the diaphragm unit 250 of the present embodiment has a line-shaped slit 260. Therefore, the X-rays 110 that have passed through the slits 260 of the two diaphragm means 250 become line-shaped parallel light. Note that, like the diaphragm unit 200 described above with reference to FIG. 1, it is more preferable that a tapered portion that suppresses scattering of the X-ray 110 is formed on the emission side of the diaphragm unit 250 of the present embodiment.

  In the pattern inspection apparatus according to the present embodiment, as shown in FIG. 6, the zone plate 410 is installed at the position of the two-dimensional detector 400 of the pattern inspection apparatus described above with reference to FIG. A one-dimensional detector 540 called a line sensor or the like is installed on the opposite side of the X-ray source 100 from the zone plate 410.

  The zone plate 410 can collect X-rays not shielded by the mask 300 on the one-dimensional detector 540 by using X-ray diffraction. The one-dimensional detector 540 can detect the intensity of the X-ray 150 collected by the zone plate 410. Here, the position in the line-shaped X-ray 110 and the position in the one-dimensional detector 540 correspond to each other. Therefore, the one-dimensional detector 540 can detect the intensity corresponding to each position of the line-shaped X-ray 110.

More specifically, the X-ray at the first position in the line-shaped X-ray 110 is condensed at the position A in the one-dimensional detector 540, for example, the X-ray 150a shown in FIG. . On the other hand, the X-ray at the second position in the line-shaped X-ray 110 is condensed at the position B in the one-dimensional detector 540, for example, as the X-ray 150b shown in FIG. That is, the X-rays at the first and second positions in the linear X-ray 110 are condensed at different positions. The one-dimensional detector 540 detects first and second positions in the line-shaped X-ray 110 by detecting the intensity of the X-rays collected at the positions A and B in the one-dimensional detector 540. Each of the X-ray intensities at can be detected.
Other structures are the same as those of the pattern inspection apparatus described above with reference to FIGS.

Next, the pattern inspection method according to the present embodiment will be described.
First, the pattern inspection method until the X-ray 110 passes through the sample 800 and reaches the mask 300 is the same as the pattern inspection method described above with reference to FIG. However, as described above, the X-ray 110 reaching the mask 300 is a line-shaped parallel light.
Subsequently, the direct light 120 and the pattern diffracted light 130 are shielded by the mask 300 provided on the incident side of the zone plate 410.

  Subsequently, the X-rays that are not shielded by the mask 300, that is, the defect scattered light 140 scattered by the defects are diffracted by the zone plate 410, and, for example, like the X-rays 150a and 150b shown in FIG. The light is condensed at each position in the one-dimensional detector 540 corresponding to each position in the X-ray 110. Subsequently, by moving the optical system such as the X-ray source 100 or the sample 800, X-rays 110 are irradiated to other portions on the sample 800. Then, the difference calculation unit 510 calculates the difference in intensity between the two corresponding X-rays 150 of the sample 800 detected by the one-dimensional detector 540. Then, the determination unit 520 determines the presence / absence of a defect based on the difference calculated by the difference calculation unit 510. Thereby, the defect which arose on the sample 800 is detectable.

  According to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, a line-shaped X-ray is irradiated onto the sample 800 instead of a point shape, and the X-ray not shielded by the mask 300 is detected one-dimensionally by the zone plate 410. The light is condensed on the vessel 540. At this time, the X-ray 150 diffracted by the zone plate 410 is condensed at each position in the one-dimensional detector 540 corresponding to each position in the linear X-ray 110. Therefore, the area that can be inspected at a time is widened, and defect inspection can be performed at a higher speed than the X-ray detector 530.

Next, still another embodiment of the present invention will be described.
FIG. 7 is a schematic perspective view showing a pattern inspection apparatus according to still another embodiment of the present invention.
In the present embodiment, as shown in FIG. 7, the point-shaped X-ray 110 is irradiated onto the sample 800 at a shallow angle. Therefore, the X-ray source 100, the diaphragm means 200, and the sample 800 are installed so that the point-shaped X-ray 110 is incident on the surface of the sample 800 at a shallow angle. In this embodiment, an angle e formed between the surface of the sample 800 and the X-ray 110 incident on the surface of the sample 800 is set so that the X-ray 110 is totally reflected on the surface of the sample 800. Yes. Note that when the material of the sample 800 is silicon, the angle e formed between the surface of the sample 800 and the X-ray 110 incident on the surface of the sample 800 is 0.2 degrees or less. Other structures are the same as those of the pattern inspection apparatus described above with reference to FIGS.

Next, the pattern inspection method according to the present embodiment will be described.
First, X-rays are generated in the X-ray source 100, and the X-rays 110 are emitted from the X-ray source 100 toward the aperture means 200. The X-ray 110 emitted from the X-ray source 100 becomes point-shaped parallel light by the aperture means 200. Then, by appropriately arranging the X-ray source 100, the aperture means 200, and the sample 800, the X-ray 110 that has become point-like parallel light is irradiated onto the sample 800 at a shallow angle.

  The X-ray 110 irradiated to the sample 800 is totally reflected on the surface of the sample 800. At this time, the X-rays 110 totally reflected on the surface of the sample 800 are scattered by a pattern or a defect on the sample 800. More specifically, the X-ray 110 that is totally reflected on the surface of the sample 800 includes the X-ray pattern diffracted light 130 diffracted by the pattern formed on the sample 800, and a short circuit or conduction that occurs during the device manufacturing process. And X-ray defect scattered light 140 scattered by defects such as depletion and remaining foreign matter. Further, the X-ray 110 that is totally reflected on the surface of the sample 800 has the direct light 120 of the X-ray that is reflected without being scattered by the sample 800.

  The X-rays 110 totally reflected on the surface of the sample 800 form a two-dimensional pattern on the two-dimensional detector 400. From here, the pattern inspection method until the determination means 520 determines the presence or absence of a defect is the same as the pattern inspection method described above with reference to FIG.

  According to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, the X-ray 110 is irradiated onto the sample 800 at a shallow angle, and the defect scattered light 140 scattered by the defects on the sample 800 is detected. Only 800 surface defects can be detected. That is, according to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, only information on the surface of the sample 800 can be obtained. Therefore, a finer defect can be detected.

Next, still another embodiment of the present invention will be described.
FIG. 8 is a schematic perspective view showing a pattern inspection apparatus according to still another embodiment of the present invention.
In the present embodiment, similarly to the pattern inspection apparatus described above with reference to FIG. 7, the point-shaped X-ray 110 is irradiated onto the sample 800 at a shallow angle. The angle e formed between the surface of the sample 800 and the X-ray 110 incident on the surface of the sample 800 is set so that the X-ray 110 is totally reflected on the surface of the sample 800.

  In this embodiment, the zone plate 410 is installed at the position of the two-dimensional detector 400 of the pattern inspection apparatus described above with reference to FIG. An X-ray detector 530 is installed on the side opposite to the X-ray source 100 when viewed from the zone plate 410. The zone plate 410 and the X-ray detector 530 are as described above with reference to FIG. Other structures are the same as those of the pattern inspection apparatus described above with reference to FIG.

Next, the pattern inspection method according to the present embodiment will be described.
First, the pattern inspection method until the X-ray 110 is totally reflected on the surface of the sample 800 and reaches the mask 300 is the same as the pattern inspection method described above with reference to FIG. Subsequently, the direct light 120 and the pattern diffracted light 130 are shielded by the mask 300 provided on the incident side of the zone plate 410.

  Subsequently, the X-rays not shielded by the mask 300, that is, the defect scattered light 140 scattered by the defect is diffracted by the zone plate 410, and the X-ray detector 150 receives the X-ray 150 as shown in FIG. Condensed to From here, the pattern inspection method until the determination unit 520 determines the presence or absence of a defect is the same as the pattern inspection method described above with reference to FIG.

  According to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, X-rays that are not shielded by the mask 300 are condensed on the X-ray detector 530 by the zone plate 410, so that the X-ray is higher than the two-dimensional detector 400. Sensitive defect inspection can be performed. Further, since the X-ray 110 is irradiated onto the sample 800 at a shallow angle and the defect scattered light 140 scattered by the defects on the sample 800 is detected, the same effect as described above with reference to FIG. 7 can be obtained.

Next, still another embodiment of the present invention will be described.
FIG. 9 is a schematic perspective view showing a pattern inspection apparatus according to still another embodiment of the present invention.
In the present embodiment, as shown in FIG. 9, the line-shaped X-ray 110 is irradiated onto the sample 800 at a shallow angle. That is, the diaphragm means 250 of the present embodiment has a line-shaped slit 260 as in the diaphragm means described above with reference to FIG. The angle e formed between the surface of the sample 800 and the X-ray 110 incident on the surface of the sample 800 is set so that the line-shaped X-ray 110 is totally reflected on the surface of the sample 800.

  In this embodiment, the zone plate 410 is installed at the position of the two-dimensional detector 400 of the pattern inspection apparatus described above with reference to FIG. A one-dimensional detector 540 called a line sensor, for example, is installed on the opposite side of the zone plate 410 from the X-ray source 100. The zone plate 410 and the one-dimensional detector 540 are as described above with reference to FIG. Other structures are the same as those of the pattern inspection apparatus described above with reference to FIG.

Next, the pattern inspection method according to the present embodiment will be described.
First, the pattern inspection method until the X-ray 110 is totally reflected on the surface of the sample 800 and reaches the mask 300 is the same as the pattern inspection method described above with reference to FIG. However, as described above, the X-ray 110 reaching the mask 300 is a line-shaped parallel light. Subsequently, the direct light 120 and the pattern diffracted light 130 are shielded by the mask 300 provided on the incident side of the zone plate 410.

  Subsequently, the X-rays that are not shielded by the mask 300, that is, the defect scattered light 140 scattered by the defects are diffracted by the zone plate 410, and, for example, like the X-rays 150a and 150b shown in FIG. The light is condensed at each position in the one-dimensional detector 540 corresponding to each position in the X-ray 110. From here, the pattern inspection method until the determination means 520 determines the presence or absence of a defect is the same as the pattern inspection method described above with reference to FIG.

  According to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, a line-shaped X-ray is irradiated onto the sample 800 instead of a point shape, and the X-ray not shielded by the mask 300 is detected one-dimensionally by the zone plate 410. The light is condensed on the vessel 540. Therefore, as described above with reference to FIG. 6, a region that can be inspected at a time is widened, and defect inspection can be performed at a higher speed than the X-ray detector 530. Further, since the X-ray 110 is irradiated onto the sample 800 at a shallow angle and the defect scattered light 140 scattered by the defects on the sample 800 is detected, the same effect as described above with reference to FIG. 7 can be obtained.

Next, still another embodiment of the present invention will be described.
FIG. 10 is a schematic perspective view showing a pattern inspection apparatus according to still another embodiment of the present invention.
In the pattern inspection apparatus described above with reference to FIGS. 7 to 9, the X-ray 110 is reflected on the surface of the sample 800 by irradiating the X-ray 110 onto the sample 800 at a shallow angle. By irradiating the sample 800 with the X-ray 110 substantially perpendicularly, the X-ray 110 is reflected on the surface of the sample 800.

More specifically, the two-dimensional detector 450 of this embodiment is, for example, a CCD (Charge Coupled Device) or an imaging plate, and a through-hole through which the X-ray 110 emitted from the X-ray source 100 can pass. 451. That is, the X-ray 110 emitted from the X-ray source 100 can pass through the through hole 451 provided in the two-dimensional detector 450.
In addition, as shown in FIG. 10, the sample 800 of the present embodiment is installed on the side opposite to the X-ray source 100 when viewed from the two-dimensional detector 450. The distance L4 between the sample 800 and the two-dimensional detector 450 is about 300 mm, for example.

  The mask 350 of the present embodiment is placed on the emission side of the two-dimensional detector 450, that is, on the sample 800 side as viewed from the two-dimensional detector 450, as indicated by the arrow c shown in FIG. The mask 350 has a pattern diffracted light shielding unit 330 that can shield the pattern diffracted light 130 diffracted by a pattern such as L / S formed on the surface of the sample 800. That is, the mask 350 of the present embodiment does not include the direct light shielding unit 320 that can shield the direct light (0th-order light) 120 of the X-ray, unlike the mask 300 described above with reference to FIG. The shape of the mask 350 such as the arrangement and size of the pattern diffracted light shield 330 is similar to the mask 300 described above with reference to FIG. 1, the beam diameter of the direct light 120, the device pattern such as L / S and hole arrangement, Is determined by Fourier analysis. Other structures are the same as those of the pattern inspection apparatus described above with reference to FIGS.

Next, the pattern inspection method according to the present embodiment will be described.
First, X-rays are generated in the X-ray source 100, and the X-rays 110 are emitted from the X-ray source 100 toward the aperture means 200. The X-ray 110 emitted from the X-ray source 100 becomes point-shaped parallel light by the aperture means 200. Then, by appropriately arranging the X-ray source 100, the diaphragm means 200, the two-dimensional detector 450, and the sample 800, the X-ray 110 that has become point-like parallel light penetrates the two-dimensional detector 450. The sample 800 is irradiated almost vertically through the hole 451.

  The X-ray 110 irradiated on the sample 800 is reflected on the surface of the sample 800. At this time, the X-ray 110 reflected on the surface of the sample 800 is scattered by a pattern or a defect on the sample 800. More specifically, the X-ray 110 reflected on the surface of the sample 800 includes the X-ray pattern diffracted light 130 diffracted by the pattern formed on the sample 800, and short-circuiting or conduction generated during the device manufacturing process. It is separated into X-ray defect scattered light 140 scattered by defects such as depletion and remaining foreign matter. Further, the X-ray 110 reflected on the surface of the sample 800 includes the direct light 120 of the X-ray reflected without being scattered by the sample 800.

  Then, the X-rays reflected on the surface of the sample 800 form a two-dimensional pattern on the two-dimensional detector 450. Of the X-rays forming the two-dimensional pattern, the pattern diffracted light 130 is shielded by a mask 350 provided on the emission side of the two-dimensional detector 450. That is, the pattern diffracted light 130 is shielded by the pattern diffracted light shielding unit 330 of the mask 350.

  Subsequently, the X-rays not shielded by the mask 350, that is, the defect scattered light 140 scattered by the defect is detected by the two-dimensional detector 450. From here, the pattern inspection method until the determination means 520 determines the presence or absence of a defect is the same as the pattern inspection method described above with reference to FIG.

  According to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, the X-ray 110 is irradiated on the sample 800 substantially perpendicularly, and the defect scattered light 140 reflected and scattered by the defect on the surface of the sample 800 is detected. Thus, only defects on the surface of the sample 800 can be detected. That is, according to the pattern inspection apparatus and the pattern inspection method according to the present embodiment, only information on the surface of the sample 800 can be obtained. Therefore, a finer defect can be detected.

The embodiment of the present invention has been described above. However, the present invention is not limited to these descriptions. As long as the features of the present invention are provided, those skilled in the art appropriately modified the design of the above-described embodiments are also included in the scope of the present invention.
For example, in the embodiment described above with reference to FIGS. 1 to 3, the sample 800 is obliquely irradiated onto the sample 800 by tilting the sample 800 with respect to the X-ray 110 as indicated by the arrow d illustrated in FIG. 1. Although a variation has been described, this is equally applicable to the embodiments described above with respect to FIGS.
In the embodiment described above with reference to FIGS. 1 to 3, the direct light 120 and the pattern diffracted light 130 are shielded by performing data processing that ignores the signal after the X-ray is detected by the two-dimensional detector 400. Although a modification has been described, this is equally applicable to the embodiments described above with respect to FIGS.
Further, for example, the shape, size, material, arrangement, etc. of each element included in the two-dimensional detectors 400, 450 and the masks 300, 350, the X-ray source 100, the diaphragm means 200, 250, the sample 800, and the two-dimensional detector The installation forms of 400 and 450 and the masks 300 and 350 are not limited to those illustrated, and can be changed as appropriate.
Moreover, each element with which each embodiment mentioned above is provided can be combined as long as technically possible, and the combination of these is also included in the scope of the present invention as long as it includes the features of the present invention.

  100 X-ray source, 110 X-ray, 120 direct light, 130 pattern diffracted light, 140 defect scattered light, 150, 150a, 150b X-ray, 200 aperture means, 200a multilayer mirror, 210 slit, 220 taper portion, 250 aperture means , 260 slit, 300 mask, 320 direct light shielding part, 330 pattern diffracted light shielding part, 350 mask, 400 two-dimensional detector, 410 zone plate, 450 two-dimensional detector, 451 through-hole, 510 difference calculation means, 520 determination Means, 530 X-ray detector, 540 one-dimensional detector, 800 samples

Claims (10)

An X-ray source for generating X-rays;
A diaphragm means for irradiating the X-ray emitted from the X-ray source onto a diaphragm sample with point-shaped parallel light;
A mask for shielding X-ray direct light transmitted through the sample and X-ray diffracted light diffracted by a pattern formed on the sample;
A two-dimensional detector for detecting a two-dimensional pattern of X-rays not shielded by the mask;
A difference calculating means for calculating a difference between the two-dimensional patterns respectively obtained by irradiating the two corresponding points of the sample with the point-shaped X-rays;
Determining means for determining the presence or absence of a defect based on the difference;
A pattern inspection apparatus comprising: An X-ray source for generating X-rays;
A diaphragm means for irradiating the X-ray emitted from the X-ray source onto a diaphragm sample with point-shaped parallel light;
A mask for shielding X-ray direct light transmitted through the sample and X-ray diffracted light diffracted by a pattern formed on the sample;
A zone plate that collects X-rays not shielded by the mask;
An X-ray detector for detecting the intensity of the condensed X-ray;
A difference calculating means for calculating the difference in intensity detected by irradiating the corresponding two points of the sample with the point-shaped X-rays;
Determining means for determining the presence or absence of a defect based on the difference;
A pattern inspection apparatus comprising: An X-ray source for generating X-rays;
A diaphragm means for irradiating the X-ray emitted from the X-ray source onto the diaphragm sample with line-shaped parallel light;
A mask for shielding X-ray direct light transmitted through the sample and X-ray diffracted light diffracted by a pattern formed on the sample;
A zone plate that collects X-rays not shielded by the mask;
A one-dimensional detector for detecting the intensity of the condensed X-ray;
A difference calculating means for calculating the difference in intensity detected by irradiating the corresponding two portions of the sample with the line-shaped X-ray;
Determining means for determining the presence or absence of a defect based on the difference;
A pattern inspection apparatus comprising: An X-ray source for generating X-rays;
A diaphragm means for irradiating X-rays emitted from the X-ray source into point-shaped parallel light on the diaphragm sample at a shallow angle;
A mask for shielding X-ray direct light reflected on the surface of the sample and X-ray diffracted light diffracted by a pattern formed on the sample;
A two-dimensional detector for detecting a two-dimensional pattern of X-rays not shielded by the mask;
A difference calculating means for calculating a difference between the two-dimensional patterns respectively obtained by irradiating the two corresponding points of the sample with the point-shaped X-rays;
Determining means for determining the presence or absence of a defect based on the difference;
A pattern inspection apparatus comprising: X-rays are generated and emitted,
Irradiate the emitted X-rays onto the aperture sample with point-shaped parallel light,
Shielding the X-ray direct light transmitted through the sample and the X-ray diffracted light diffracted by the pattern formed on the sample;
Detecting the unshielded X-ray two-dimensional pattern;
Calculate the difference between the two-dimensional patterns acquired by irradiating the corresponding two points of the sample with the point-shaped X-rays,
A pattern inspection method, wherein the presence or absence of a defect is determined based on the difference. X-rays are generated and emitted,
Irradiate the emitted X-rays onto the aperture sample with point-shaped parallel light,
Shielding the X-ray direct light transmitted through the sample and the X-ray diffracted light diffracted by the pattern formed on the sample;
Focusing the unshielded X-rays;
Detecting the intensity of the condensed X-ray;
Irradiating the two corresponding points of the sample with the point-shaped X-rays to calculate the difference in the detected intensity,
A pattern inspection method, wherein the presence or absence of a defect is determined based on the difference. X-rays are generated and emitted,
Irradiate the emitted X-rays onto a diaphragm sample with line-shaped parallel light,
Shielding the X-ray direct light transmitted through the sample and the X-ray diffracted light diffracted by the pattern formed on the sample;
Focusing the unshielded X-rays;
Detecting the intensity of the condensed X-ray;
Irradiating the corresponding two locations of the sample with the line-shaped X-ray to calculate the difference between the detected intensities,
A pattern inspection method, wherein the presence or absence of a defect is determined based on the difference. X-rays are generated and emitted,
Irradiate the emitted X-rays into point-shaped parallel light on a sample at a shallow angle,
Shielding X-ray direct light reflected on the surface of the sample and X-ray diffracted light diffracted by the pattern formed on the sample;
Detecting the unshielded X-ray two-dimensional pattern;
Calculate the difference between the two-dimensional patterns acquired by irradiating the corresponding two points of the sample with the point-shaped X-rays,
A pattern inspection method, wherein the presence or absence of a defect is determined based on the difference. X-rays are generated and emitted,
Irradiate the emitted X-rays into point-shaped parallel light on a sample at a shallow angle,
Shielding X-ray direct light reflected on the surface of the sample and X-ray diffracted light diffracted by the pattern formed on the sample;
Focusing the unshielded X-rays;
Detecting the intensity of the condensed X-ray;
Irradiating the two corresponding points of the sample with the point-shaped X-rays to calculate the difference in the detected intensity,
A pattern inspection method, wherein the presence or absence of a defect is determined based on the difference. X-rays are generated and emitted,
Irradiate the emitted X-rays into a line-shaped parallel light on a sample at a shallow angle,
Shielding X-ray direct light reflected on the surface of the sample and X-ray diffracted light diffracted by the pattern formed on the sample;
Focusing the unshielded X-rays;
Detecting the intensity of the condensed X-ray;
Irradiating the corresponding two locations of the sample with the line-shaped X-ray to calculate the difference between the detected intensities,
A pattern inspection method, wherein the presence or absence of a defect is determined based on the difference.