KR102619096B1 - Artificial synaptic-mimicking heterogeneous interface phototransistor and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an artificial synapse-mimicking heterogeneous interface phototransistor and a method of manufacturing the same. The present invention relates to an artificial synapse-mimicking heterogeneous interface phototransistor that absorbs light energy and includes a photoactive layer in which a current is formed by a gate electrode and source and drain electrodes. The layer has a dual structure of an N-type two-dimensional compound and a P-type two-dimensional compound, and the current is caused by a change in at least one of the light energy applied from the outside in the form of a pulse and the voltage applied to the gate electrode. By deriving the characteristics and electrically simulating the synaptic activity of neurons using the derived current characteristics, the reliability and precision of brain nerve activity can be improved.

Description

Artificial synapse-mimicking heterogeneous interface phototransistor and manufacturing method thereof {ARTIFICIAL SYNAPTIC-MIMICKING HETEROGENEOUS INTERFACE PHOTOTRANSISTOR AND MANUFACTURING METHOD THEREOF}

The present invention relates to an artificial synapse-mimicking heterogeneous interface phototransistor and a method of manufacturing the same, and to a technology that allows simulating the activity of neurons using optical pulses and gate voltages.

The human brain has approximately 1 billion synapses per square millimeter (mm ² ) interacting with each other, transmitting chemical and electrical signals to carry out specific commands and processing data in an instant.

Recently, there has been increasing interest in research that can intuitively observe brain activity through the electrical characteristics of semiconductor devices, and next-generation neuromorphic devices that can significantly reduce hardware size and power consumption by imitating brain neural structures are attracting attention. I'm receiving it.

Research on neuromorphic devices that electrically mimic the activity of synapses is an application technology for artificial neural computing by implementing synapses and neurons, biological nervous systems responsible for learning and memory functions, in the form of electronic devices and learning new information. It is one of the technologies with high potential for use in this field.

In order to electrically simulate synaptic activity, it must be possible to represent the chemical and electrical signals that occur in the actual brain.

However, the conventional two-terminal memristor was implemented as a neuromorphic device for synaptic integration, but it is difficult to perfectly simulate brain activity due to nonlinear current characteristics and noise during operation.

In addition, simulating the brain's electrical signals may result in energy loss due to heat generation due to high operating voltage, and it remains a challenge to be solved due to limitations in information transmission speed.

In the case of a neuromorphic device using a three-terminal transistor, a synaptic signal was simulated by using the electrical spike input of a neuron as a gate voltage pulse, but the gate voltage pulse has limitations in information transmission speed.

In addition, even if synaptic potentiation is simulated using optical pulses, synaptic depression cannot be integrated using gate pulses.

Therefore, in order to solve this problem, there is an urgent need to develop a synaptic transistor that can precisely simulate the signal transmission process in the brain and adjust synaptic plasticity, which indicates the strength of connections between neurons.

Republic of Korea Patent No. 10-2169913 (announced on October 26, 2020)

The present invention can provide an artificial synapse-mimicking heterogeneous interface phototransistor that can simulate various synaptic behaviors by implementing a three-terminal synaptic device using optical pulses and gate voltage, and a method of manufacturing the same.

The artificial synapse-mimicking heterogeneous interface phototransistor according to one aspect of the present invention may include a photoactive layer in which light energy is absorbed and current is formed by a gate electrode and source and drain electrodes, and the photoactive layer is of N-type. A two-dimensional compound and a P-type two-dimensional compound are provided in a heterogeneous structure, and the phototransistor generates a current according to a change in at least one of light energy applied from the outside in the form of a pulse and the voltage applied to the gate electrode. By deriving the characteristics, the synaptic activity of neurons can be electrically simulated using the derived current characteristics.

Preferably, the N-type two-dimensional compound and the P-type two-dimensional compound may each have different energy band gaps.

Preferably, the photoactive layer includes an N-type region, a P-type region, and an overlap region as the N-type two-dimensional compound and the P-type two-dimensional compound are stacked to have a predetermined overlap region. And, each of the N-type region, P-type region, and overlap region can absorb light energy of different wavelength bands.

Preferably, the N-type two-dimensional compound is MoSe ₂ and the two-dimensional compound of P-type is WSe ₂ It can be.

Preferably, the synaptic activity of the neuron is characterized by long-term potentiation, which increases the ability of the presynaptic neuron and postsynaptic neuron to transmit signals through the synapse, and long-term suppression, which decreases the ability to transmit signals. -term Depression).

A method of manufacturing an artificial synapse-mimicking heterogeneous interface phototransistor according to another aspect of the present invention may include a photoactive layer in which light energy is absorbed and current is formed by a gate electrode and source and drain electrodes, crystalline silicon, metal, and A gate electrode forming step in which a gate electrode is formed of one of metal oxides; A gate insulating layer forming step of forming a gate insulating layer on the gate electrode; A photoactive layer forming step in which at least one of an N-type two-dimensional compound and a P-type two-dimensional compound is formed on the gate insulating layer; And it may include a source and drain electrode forming step in which source and drain electrodes are provided at both ends of the photoactive layer, respectively.

Preferably, the photoactive layer forming step is performed by stacking the N-type two-dimensional compound and the P-type two-dimensional compound to have a predetermined overlap area, thereby forming an N-type area, a P-type area, and an overlap area. may include.

According to the present invention, the reliability and precision of brain nerve activity can be improved by simulating the synaptic activity of neurons with the current characteristics of a phototransistor derived using optical pulses and gate voltage.

Figure 1 is a configuration diagram of an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment.
Figure 2 is a schematic diagram showing the movement of electrons and holes by light pulses according to one embodiment.
Figure 3 is a graph electrically showing synapse activity according to one embodiment.
Figure 4 is a graph showing current characteristics of an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment.
Figure 5 is a schematic diagram showing the stacking sequence of an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment.
Figure 6 is a flowchart showing a method of manufacturing an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment.

Hereinafter, the artificial synapse-mimicking heterogeneous interface phototransistor and its manufacturing method according to the present invention will be described in detail with reference to the attached drawings. In this process, the thickness of lines or sizes of components shown in the drawings may be exaggerated for clarity and convenience of explanation. In addition, the terms described below are terms defined in consideration of functions in the present invention, and may vary depending on the operator's intention or custom. Therefore, definitions of these terms should be made based on the content throughout this specification.

The purpose and effect of the present invention can be naturally understood or become clearer through the following description, and the purpose and effect of the present invention are not limited to the following description. Additionally, in describing the present invention, if it is determined that a detailed description of known techniques related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

Figure 1 is a configuration diagram of an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment.

As shown in Figure 1, the artificial synapse-mimicking heterogeneous interface phototransistor according to one embodiment may include a gate electrode 110, a gate insulating film 120, a photoactive layer 130, and source and drain electrodes 140. there is.

The gate electrode 110 may be made of crystalline silicon. Crystalline silicon can be used as a substrate, but is not limited to this, and the gate electrode 110 can be formed on the substrate. For example, when formed on a substrate, the substrate is optionally one of glass, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyimde (PI), and colorless polyimde (CPI). It can be used as ITO (Indium Tin Oxide), FTO (Fluorine-doped tin oxide), ZTO (Zinc Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), and SnO ₂ (Stannous oxide) on the substrate. ), In ₂ O ₃ (Indium Oxide), ZnO (Zinc Oxide), MoO ₃ (Molybdenum trioxide), CoO (Cobalt oxide), NiO (Nickel oxide), WoO ₃ (Tungsten trioxide), TiO ₂ (Titanium dioxide), It may be selected from IGZO (Indium Gallium Zinc Oxide), IZTO (Indium zinc-tin oxide), Al (Aluminum), Ag (Silver), and Au (Gold), but the material is not necessarily limited to the above-mentioned materials.

The gate insulating film 120 may be formed on a silicon substrate. The gate insulating film 120 may be formed by a dry or wet oxidation process. The oxidation process can form a thin and uniform silicon oxide film (SiOx) by reacting oxygen or water vapor on the surface of crystalline silicon at a high temperature of 800 to 1,200 degrees.

The gate insulating film 120 serves to block leakage current from flowing between circuits. In addition, it prevents diffusion in the ion implantation process, and can also be used in the etching process to protect areas other than the etched area when etching necessary parts.

The photoactive layer 130 may be formed on the gate insulating film 120 and may be comprised of an N-type two-dimensional compound and a P-type two-dimensional compound, and an N-type two-dimensional compound 132 and a P-type compound. Each of the -type two-dimensional compounds (131) may have different energy band gaps. Two-dimensional compounds are materials in which atoms of several nanometers are arranged in a single layer, and can be divided into conductors, semiconductors, and insulators depending on their electrical properties. Here, the N-type two-dimensional compound is MoSe ₂ and the two-dimensional compound of P-type is WSe ₂ It can be.

Two-dimensional compounds have a Van der Waals heterojunction structure, so they bend easily even in thin layers, have hard properties, have durability of the material itself, and have fast carrier mobility.

In addition, since two-dimensional compounds have a nanoscale thickness, the carrier density and carrier type (hole or electron) of each TMD (Transistion Metal Dichalcogenides) material in the Van der Waals heterojunction structure can be determined. It can be efficiently adjusted through gate bias.

Two-dimensional compounds having these properties may be hydrogenated derivatives, halogenated derivatives, chlorinated derivatives, and compounds with the structural formulas MOX, M2N, MX2, MY2, and MY3. Here, M0 may be Ga or In, M may be any one of Ti, Zr, Hf, Nb, Mo, W, Re, Pd, and Pt, and X may be any one of S, Se, and Te. and Y may be transition metal chalcogenides, semimetal chalcogenides, or transition metal halides containing any one of Cl, Br, and I.

For example, two-dimensional compounds include Graphene, Graphane, Fluorographene, chlorographene, Hexagonal Boron Nitride (h-BN), Graphene Oxide (GO), β-Silicene, Silicane, β-Germanene, Germanane. , Fluorogermanene, Silicon Carbide (SiC), Boron Nitride (BN), Black Phosphorous (BP), Zinc Oxide (ZnO), Zinc sulfide (ZnS), Zinc selenide (ZnSe), Zinc telluride (ZnTe), Cadmium Oxide (CdO) , Cadmium sulfide (CdS), Cadmium selenide (CdSe), Cadmium telluride (CaTe), Gallium sulfide (GaS), Gallium selenide (GaSe), Indium sulfide (InS), Indium selenide (InSe), Hafnium disulfide (HfS ₂ ), Hafnium diselenide(HfSe ₂ ), Hafnium ditelluride(HfTe ₂ ), Molybdenum disulfide(MoS ₂ ), Molybdenum diselenide(MoSe ₂ ), Molybdenum ditelluride(MoTe ₂ ), Niobium disulfide(NbS ₂ ), Niobium diselenide(NbSe ₂ ), Niobium ditelluride(NbTe ₂ ), Nickel disulfide(NiS ₂ ), Nickel diselenide(NiSe ₂ ), Nickel ditelluride(NiTe ₂ ), Palladium disulfide(PdS ₂ ), Palladium diselenide(PdSe ₂ ), Palladium ditelluride(PdTe ₂ ), Platinum disulfide (PtS ₂ ), Platinum diselenide(PtSe ₂ ), Platinum ditelluride(PtTe ₂ ), Rhenium diselenide(ReS ₂ ), Rhenium diselenide(ReSe ₂ ), Rhenium ditelluride(ReTe ₂ ), Tantalum disulfide(TaS ₂ ), Tantalum diselenide( TaSe ₂ ), Tantalum ditelluride(TaTe ₂ ), Titanium disulfide(TiS ₂ ), Titanium diselenide(TiSe ₂ ), Titanium ditelluride(TiTe ₂ ), Tungsten disulfide(WS ₂ ), Tungsten diselenide(WSe ₂ ), Tungsten ditelluride(WTe) ₂ ), Zirconium disulfide (ZrS ₂ ), Zirconium diselenide (ZrSe ₂ ), Zirconium ditelluride (ZrTe ₂ ), Cobalt dichloride (CoCl ₂ ), Cobalt dibromide (CoBr ₂ ), Iron dichloride (FeCl ₂ ), Iron dibromide (FeBr _{2 )} ), Iron diiodide(FeI ₂ ), Hafnium dichloride(HfCl ₂ ), Hafnium dibromide(HfBr ₂ ), Hafnium diiodide(HfI ₂ ), Manganese dichloride(MnCl ₂ ), Manganese dibromide(MnBr ₂ ), Manganese diiodide(MnI ₂ ) , Molybdenum dichloride(MoCl ₂ ), Molybdenum dibromide(MoBr ₂ ), Molybdenum diiodide(MoI ₂ ), Niobium dichloride(NbCl ₂ ), Niobium dibromide(NbBr ₂ ), Niobium diiodide(NbI ₂ ), Nickel dichloride(NiCl ₂ ), Nickel dibromide(NiBr ₂ ), Tantalum dichloride(TaCl ₂ ), Tantalum dibromide(TaBr ₂ ), Tantalum diiodide(TaI ₂ ), Titanium dichloride(TiCl ₂ ), Titanium dibromide(TiBr ₂ ), Titanium diiodide(TiI ₂ ), Vanadium dichloride(VCl ₂ ), Vanadium dibromide(VBr ₂ ), Vanadium diiodide(VI ₂ ), Tungsten dichloride(WCl ₂ ), Tungsten dibromide(WBr ₂ ), Tungsten diiodide(WI ₂ ), Zirconium dichloride(ZrCl ₂ ), Zirconium dibromide (ZrBr ₂ ), Zirconium diiodide(ZrI ₂ ), Arsenicum trichloride(AsCl ₃ ), Chromium trichloride(CrCl ₃ ), Chromium tribromide(CrBr ₃ ), Chromium triiodide(CrI ₃ ), Iron trichloride(FeCl ₃ ), Iron tribromide( FeBr ₃ ), Molybdenum trichloride(MoCl ₃ ), Molybdenum (MoBr ₃ ), Stibium trichloride(SbCl ₃ ), Scandium trichloride(ScCl ₃ ), Scandium tribromide(ScBr ₃ ), Titanium trichloride(TiCl ₃ ), Titanium tribromide(TiBr ₃ ) ), Vanadium trichloride (VCl ₃ ), Vanadium (VBr ₃ ), Yttrium trichloride (YCl ₃ ) and Zirconium trichloride (ZrCl ₃ ). Additionally, two-dimensional compounds may be Covalent Organic Frameworks (COFs). However, it is not necessarily limited to the above-mentioned substances.

Here, the photoactive layer 130 absorbs light to generate electrons and holes, and is not necessarily made of a two-dimensional compound. In other words, it can be provided with organic materials. For example, a P-type organic compound may be a compound composed of five linear fused benzene rings in a pentacene structure. More specifically, Penetacene, DNTT(Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene), C8-BTBT(2,7-Dioctyl[1]benzothieno[3 ,2-b][1]benzothiophene), P3HT (Poly(3-hexylthiophene-2,5-diyl)), and TIPS-pentacene (6,13-Bis(triisopropylsilylethynyl)pentacene). N-type organic compounds include PTCDI-C13 (N,N'-Ditridecyl-3,4,9,10-perylenetetracarboxylic Diimide), and F16CuPc (Copper(II) 1,2,3,4,8,9,10, It may be 11,15,16,17,18,22,23,24,25-hexadecafluoro-29H,31H-phthalocyanine). However, P-type organic compounds and N-type organic compounds are not necessarily limited to the above-mentioned substances.

The photoactive layer 130 can generate charges by light energy applied from the outside in the form of pulses, and the generated charges can affect the current characteristics of the phototransistor. At this time, information about transistor current characteristics can be obtained by changing the voltage applied to the gate electrode 110. In other words, the phototransistor derives current characteristics according to changes in at least one of the light energy applied from the outside in the form of a pulse and the voltage applied to the gate electrode 110, and electrically displays the synaptic activity of the neuron with the derived current characteristics. It can be copied.

At this time, at least one of the N-type two-dimensional compound 132 and the P-type two-dimensional compound 131 may be doped with an organic compound or an inorganic compound, and the doped two-dimensional compound further generates electrons and holes. It can be transported quickly. For example, doping can be done by electrically separating gaseous compounds and accelerating the separated ions to penetrate into the two-dimensional compound through ionic bonding. Additionally, a gaseous compound can be doped through diffusion by exposing it to a two-dimensional compound for a long period of time. However, the two-dimensional compound is not necessarily limited to the doping method described above.

The photoactive layer 130 is formed by stacking the N-type two-dimensional compound 132 and the P-type two-dimensional compound 131 to have a predetermined overlap area, thereby forming an N-type area, a P-type area, and an overlap. It may include regions, and each of the N-type region, P-type region, and overlap region can absorb light energy of different wavelength bands. At this time, the N-type two-dimensional compound (132) and the P-type two-dimensional compound (131) each derive current characteristics according to light energy with different energy band gaps to more closely simulate the synaptic activity of neurons. You can.

Here, the synaptic activity of the neuron is characterized by long-term potentiation, which increases the ability of presynaptic neurons and postsynaptic neurons to transmit signals through the synapse, and long-term depression, which decreases the ability to transmit signals. ) may be one of the following.

The above-described N-type two-dimensional compound 132 and P-type two-dimensional compound are for explaining one embodiment, and the N-type two-dimensional compound 132 is necessarily connected to the drain electrode 142, The P-type two-dimensional compound 131 is not connected to the source electrode 141. That is, the positions of the N-type two-dimensional compound 132 and the P-type two-dimensional compound 131 may be changed. For example, the N-type two-dimensional compound 132 may be connected to the source electrode 141, and the P-type two-dimensional compound 131 may be connected to the drain electrode 142.

The source and drain electrodes 140 may be formed on the photoactive layer 130 and may be formed of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), zinc tin oxide (ZTO), indium zinc oxide (IZO), AZO (Aluminum Zinc Oxide), SnO ₂ (Stannous oxide), In ₂ O ₃ (Indium Oxide), ZnO (Zinc Oxide), MoO ₃ (Molybdenum trioxide), CoO (Cobalt oxide), NiO (Nickel oxide), WoO ₃ (Tungsten trioxide), TiO ₂ (Titanium dioxide), IGZO (Indium Gallium Zinc Oxide), IZTO (Indium zinc-tin oxide), Al (Aluminum), Ag (Silver), and Au (Gold). The material is not necessarily limited to the above-mentioned materials.

Figure 2 is a schematic diagram showing the movement of electrons and holes by the light pulse 10 according to one embodiment.

As shown in Figure 2, the electron and hole pairs generated by the light pulse 10 are the N-type two-dimensional compound 132 and the P-type provided in the photoactive layer 130. It can move through each of the two-dimensional compounds 131. At this time, the mobility of electrons and holes may vary depending on the drain voltage (V _D ) and gate voltage (V _G ).

If either the N-type two-dimensional compound 132 or the P-type two-dimensional compound 131 exists alone in the photoactive layer, a movement deviation of electrons or holes may occur, resulting in a decrease in current efficiency. Therefore, in order to prevent a decrease in efficiency due to movement deviation of electrons and holes, electrons and holes can be efficiently dispersed using two two-dimensional compounds. Because two-dimensional compounds can achieve nanoscale thickness and Van der Waals bonding, when using two compounds, the carrier density of each TMD material can be efficiently controlled, thereby accommodating new electronic and optoelectronic properties.

Figure 3 is a graph electrically showing synapse activity according to one embodiment.

As shown in Figure 3, in synaptic activity according to one embodiment, the current characteristics of synaptic weight, which is the electrical reactivity of an ideal synapse spike, shows an increase or decrease behavior according to the updated spike signal. You can. Here, increasing the weight is called potentiation, and decreasing it is called depression. This increase and decrease in weight is a gradual increase or decrease in synaptic activity, so it can be called long-term potentiation and long-term depression. In order to electrically simulate this synaptic activity, the voltage at the gate electrode must be adjusted to express the signal amplification effect.

In addition, the second graph in FIG. 3 is based on the graph in FIG. 4 and represents a graph where synaptic spikes are set to the input light pulse number and the synaptic weight is set to the updated drain current, indicating that it is actual data.

By applying a voltage to the gate electrode 110 and irradiating the light pulse 10 to the photoactive layer 130, long-term enhancement or long-term suppression can be simulated. At this time, the light pulse 10 simulates the updated spike of the synapse, and can indicate long-term enhancement or long-term suppression with the voltage applied to the gate. Implementing the electrical behavior that occurs at the synapse of these neurons with a transistor can provide a new perspective in designing next-generation pneumotropic systems.

Figure 4 is a graph showing current characteristics of an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment.

As shown in Figure 4, the current characteristics of the artificial synapse-mimicking heterogeneous interface phototransistor according to one embodiment have a wavelength ( ) is irradiated with a light pulse (10) of 638 nm, and the current when the drain voltage (V _D ) is -1V and -10V and the gate voltage (V _G ) is 0V, 60V, -60V, and -20V This is a graph showing the characteristics.

When V _D is -1V, comparing the current characteristics according to the change in V _G , it can be seen that the increase or decrease in drain current changes depending on the size of V _G , when the gate voltage is 60V and -20V. By comparison, it can be seen that when the gate voltage is 60V, it shows long-term enhancement, and when the gate voltage is -20V, it shows long-term suppression current characteristics.

When comparing the current characteristics according to the change in gate voltage when the drain voltage is -10V, the current characteristics of long-term enhancement and long-term suppression are clearly different when the gate voltage is 60V and -20V. You can check it. It can be seen that as the current density increases due to the drain voltage, the increase or decrease amount changes significantly.

The light pulse 10 is for illustrative purposes only and is not necessarily limited to the wavelength range described above. In other words, it should be recognized that the current characteristics of the phototransistor may vary depending on the light wavelength energy of the light pulse 10.

Figure 5 is a schematic diagram showing the stacking sequence of an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment.

As shown in FIG. 5, the stacking order of the artificial synapse-mimicking heterogeneous interface phototransistor according to one embodiment may include a gate electrode 110 and forming a gate insulating film 120 on the gate electrode 110. At this time, the gate insulating film 120 may be formed by a dry or wet oxidation process.

A photoactive layer 130 may be formed on the gate insulating film 120. At this time, the photoactive layer 130 may be formed of an N-type two-dimensional compound 132 and a P-type two-dimensional compound 131, and a source electrode 141 and a drain electrode at both ends of the photoactive layer 130. (142) can be formed.

Here, the photoactive layer, source electrode, and drain electrode are formed by thermal evaporation, spin coating, slot die coating, spray coating, and ink-jet coating. , It may be formed using shearing coating, chemical vapor deposition, sputtering, etc., but is not limited thereto.

Figure 6 is a flowchart showing a method of manufacturing an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment.

As shown in Figure 6, the method of manufacturing an artificial synapse-mimicking heterogeneous interface phototransistor according to an embodiment includes a gate electrode forming step (S100), a gate insulating film forming step (S200), a photoactive layer forming step (S300), and a source and It may include a drain electrode forming step (S400).

In the gate electrode forming step (S100), the gate electrode 110 may be formed of any one of crystalline silicon, metal, and metal oxide.

In the gate insulating film forming step (S200), the gate insulating film 120 may be formed on the gate electrode 110.

In the photoactive layer forming step (S300), an N-type two-dimensional compound and a P-type two-dimensional compound may be formed in a dual structure on the gate insulating layer. At this time, at least one of the P-type two-dimensional compound 131 and the N-type two-dimensional compound 132 may be doped with an organic compound or an inorganic compound.

In the source and drain electrode forming step (S400), source electrodes and drain electrodes may be formed at both ends of the photoactive layer 130, respectively. A channel through which charges can move may be formed due to the source electrode 141 and the drain electrode 142 formed on the photoactive layer 130.

Although the present invention has been described in detail through representative embodiments above, those skilled in the art will understand that various modifications can be made to the above-described embodiments without departing from the scope of the present invention. will be. Therefore, the scope of rights of the present invention should not be limited to the described embodiments, but should be determined not only by the claims described later, but also by all changes or modified forms derived from the claims and the concept of equivalents.

100: Heterogeneous interface phototransistor
110: gate electrode 120: gate insulating film
130: Photoactive layer 140: Source and drain electrodes
131: P-type two-dimensional compound 132: N-type two-dimensional compound
141: source electrode 142: drain electrode
10: optical pulse

Claims (7)

In an artificial synapse-mimicking heterogeneous interface phototransistor comprising a photoactive layer that absorbs light energy and generates current by a gate electrode and source and drain electrodes,
The photoactive layer is,
N-type two-dimensional compounds and P-type two-dimensional compounds are provided in heterogeneous structures,
The N-type two-dimensional compound and the P-type two-dimensional compound are stacked to have a predetermined overlap area,
At least one of the N-type two-dimensional compound and the P-type two-dimensional compound is doped with an organic compound or an inorganic compound,
The phototransistor is,
An artificial device characterized by electrically simulating the synaptic activity of neurons with current characteristics derived from changes in at least one of light energy applied from the outside in the form of a pulse and voltage applied to the gate electrode. Synapse-mimicking heterogeneous interface phototransistor.
According to paragraph 1,
The photoactive layer includes an N-type region, a P-type region, and an overlap region as the N-type two-dimensional compound and the P-type two-dimensional compound are stacked to have a predetermined overlap region,
An artificial synapse-mimicking heterogeneous interface phototransistor, wherein each of the N-type region, P-type region, and overlap region absorbs light energy in different wavelength bands.
According to paragraph 1,
An artificial synapse-mimicking heterogeneous interface phototransistor, characterized in that each of the N-type two-dimensional compound and the P-type two-dimensional compound has a different energy band gap.
According to paragraph 3,
The N-type two-dimensional compound is MoSe ₂ and the two-dimensional compound of P-type is WSe ₂ An artificial synapse-mimicking heterogeneous interface phototransistor.
According to paragraph 1,
The synaptic activity of the neuron is characterized by long-term potentiation, which increases the ability of presynaptic neurons and postsynaptic neurons to transmit signals through the synapse, and long-term depression, which decreases the ability to transmit signals. An artificial synapse-mimicking heterogeneous interface phototransistor, characterized in that one of the.
In the method of manufacturing an artificial synapse-mimicking heterogeneous interface phototransistor comprising a photoactive layer that absorbs the light energy of claim 1 and generates a current by the gate electrode and the source and drain electrodes,
A gate electrode forming step in which a gate electrode is formed of any one of crystalline silicon, metal, and metal oxide;
A gate insulating layer forming step of forming a gate insulating layer on the gate electrode;
A dual structure of MoSe2, an N-type two-dimensional compound, and WSe2, a P-type two-dimensional compound, is formed on the gate insulating layer, and the N-type two-dimensional compound and the P-type two-dimensional compound are predetermined. forming a photoactive layer, which is stacked to have an overlap area of, and at least one of the N-type two-dimensional compound and the P-type two-dimensional compound is doped with an organic compound or an inorganic compound; and
A method of manufacturing an artificial synapse-mimicking heterogeneous interface phototransistor comprising the step of forming source and drain electrodes where source and drain electrodes are provided on both ends of the photoactive layer, respectively.
According to clause 6,
The photoactive layer forming step includes an N-type region, a P-type region, and an overlap region as the N-type two-dimensional compound and the P-type two-dimensional compound are stacked to have a predetermined overlap region. Method for manufacturing an artificial synapse-mimicking heterogeneous interface phototransistor.