KR102602162B1 - Display device and munufacturing method thereof - Google Patents

Abstract

A first substrate, a gate line disposed on the first substrate and extending in a first direction, a data line insulated and disposed on the gate line and extending in a second direction intersecting the first direction, the gate A thin film transistor connected to a line and the data line, a common electrode disposed on the gate line and the data line, an insulating film disposed on the common electrode, and a pixel disposed on the insulating film and connected to the thin film transistor through the insulating film. an electrode, and a black matrix disposed on the pixel electrode, wherein the black matrix includes a first light-shielding portion overlapping the gate line, and a second light-shielding portion overlapping the data line, wherein the second light-shielding portion includes A display device is provided that directly contacts the common electrode through the insulating film.

Description

Display device and method of manufacturing the same {DISPLAY DEVICE AND MUNUFACTURING METHOD THEREOF}

The present invention relates to a display device and a method of manufacturing the same, and particularly to a display device and a method of manufacturing the same that can improve the aperture ratio and display quality.

Depending on the light emitting method, display devices include liquid crystal display (LCD), organic light emitting diode display (OLED display), plasma display panel (PDP), and electrophoretic display. It is classified as display), etc.

A liquid crystal display device includes a display substrate on which electrodes are formed, an opposing substrate, and a liquid crystal layer disposed between the display substrate and the opposing substrate. Recently, the COA (Color-filter On Array) structure, which increases transmittance by placing color filters on the display substrate, has been adopted.

In addition, a BOA (Black matrix On Array) structure in which a color filter and a light blocking member are placed on the display substrate to prevent misalignment in the joining process between the display substrate on which the color filter is placed and the opposing substrate on which the light blocking member is placed. is hiring.

In this BOA structure, the black matrix overlapping the data line can be omitted to improve the aperture ratio. However, in this case, spots may be visible due to reflection of external light by the data lines.

Accordingly, the present invention seeks to provide a display device and a manufacturing method thereof that can improve the aperture ratio and simultaneously prevent reflection by data lines.

A first substrate, a gate line disposed on the first substrate and extending in a first direction, a data line insulated and disposed on the gate line and extending in a second direction intersecting the first direction, the gate A thin film transistor connected to a line and the data line, a common electrode disposed on the gate line and the data line, an insulating film disposed on the common electrode, and a pixel disposed on the insulating film and connected to the thin film transistor through the insulating film. an electrode, and a black matrix disposed on the pixel electrode, wherein the black matrix includes a first light-shielding portion overlapping the gate line, and a second light-shielding portion overlapping the data line, wherein the second light-shielding portion includes A display device is provided that directly contacts the common electrode through the insulating film.

The second light blocking portion may have substantially the same shape as the data line on a planar view.

The second light blocking portion may have a width of 3 μm or more and 7 μm or less.

The data line may be bent at least once on a plane.

The second light blocking portion may have a shape that is bent at least once or more on a plane.

The insulating film may have at least one contact hole exposing the common electrode.

The contact hole may have substantially the same shape as the data line on a plane.

The contact hole may have a width of 3 ㎛ or more and 7 ㎛ or less.

The contact hole may have a shape that is bent at least once on a plane.

At least a portion of the second light blocking part may be disposed on the insulating film.

forming a gate line extending in a first direction on a first substrate, a data line extending in a second direction intersecting the first direction, and a thin film transistor connected to the gate line and the data line, the gate line and forming a common electrode on the data line, forming an insulating film on the common electrode, forming a contact hole in the insulating film having substantially the same shape as the data line on a plane, and forming a contact hole on the insulating film. forming a pixel electrode; and forming a black matrix on the insulating film on which the pixel electrode is formed, including a first light-blocking part overlapping the gate line and a second light-blocking part overlapping the data line, wherein the second light-blocking part is connected to the contact. A method of manufacturing a display device is provided in which a display device is formed in direct contact with the common electrode through a hole.

The second light blocking portion may be formed to have substantially the same shape as the data line on a plane.

The second light blocking portion may be formed to have a width of 3 μm or more and 7 μm or less. The contact hole may be formed to have a width of 3 ㎛ or more and 7 ㎛ or less.

The data line may be formed to have a shape that is bent at least once on a plane.

The display device according to the present invention can improve the aperture ratio by forming a black matrix overlapping with the data line to a certain width or less.

In the display device according to the present invention, the black matrix overlapping the data line is formed to be in direct contact with the common electrode through an insulating film to improve the adhesion of the black matrix, thereby forming the black matrix to a certain width or less.

The display device manufacturing method according to the present invention proceeds with the process of forming a contact hole exposing the drain electrode in the insulating film and simultaneously exposing the common electrode overlapping the data line, thereby forming the black matrix within a certain width without adding a separate process. It can be formed as

1 is a plan view of a display device according to an embodiment of the present invention.
Figure 2 is a cross-sectional view taken along line Ⅰ-Ⅰ' of Figure 1.
3A to 3E are plan views separately illustrating each component of a display device according to an embodiment of the present invention.
FIGS. 4A to 4G are cross-sectional views for explaining a method of manufacturing a display device according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

Since the present invention is capable of various modifications and can be implemented in various forms, only specific embodiments are illustrated in the drawings and the text mainly describes them. However, the scope of the present invention is not limited to the above specific embodiments. All changes, equivalents, or substitutes included in the spirit and technical scope of the present invention should be understood to be included in the scope of the present invention.

In drawings, each component and its shape may be drawn briefly or exaggeratedly, and components present in the actual product may be omitted rather than expressed. Accordingly, the drawings should be interpreted to aid understanding of the invention. Additionally, components that perform the same function are indicated by the same symbol.

A layer or component is described as being 'on' another layer or component not only when a layer or component is placed in direct contact with another layer or component, but also when a third layer is in between. It is meant to include all cases of insertion and arrangement.

In this specification, when a part is connected to another part, this includes not only the case where it is directly connected, but also the case where it is electrically connected with another component in between. Additionally, when it is said that a part includes a certain component, this does not mean that other components are excluded, but that other components may be further included, unless specifically stated to the contrary.

In this specification, terms such as first, second, and third may be used to describe various components, but these components are not limited by the terms. The above terms are used for the purpose of distinguishing one component from other components. For example, without departing from the scope of the present invention, a first component may be named a second or third component, etc., and similarly, the second or third component may also be named alternately.

In order to clearly explain the present invention, parts not related to the description have been omitted from the drawings, and identical or similar components are given the same reference numerals throughout the specification.

The description will be made on the assumption that the display device according to an embodiment of the present invention is a liquid crystal display device. However, the scope of application of the present invention is not limited to liquid crystal display devices, and for example, the present invention can also be applied to organic light emitting display devices.

FIG. 1 is a plan view of a display device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line I-I' of FIG. 1. 3A to 3E are plan views separately illustrating each component of a display device according to an embodiment of the present invention.

1 and 2, a display device according to an embodiment of the present invention includes a display substrate 100, a counter substrate 200, and a liquid crystal layer disposed between the display substrate 100 and the counter substrate 200. Includes 300.

The display substrate 100 includes a first substrate 110, gate wires (GL, GE), a first insulating film 120, a semiconductor layer (SM), data wires (DL, SE, DE), and a second insulating film 130. , color filters (CF1, CF2, CF3), protective layer 140, common electrode (CE), third insulating film 150, pixel electrode (PE), black matrix 161, 162, etc.

The first substrate 110 may be an insulating substrate having light transmitting properties and flexible properties, such as a plastic substrate. However, it is not limited to this, and the first substrate 110 may be made of a hard substrate such as a glass substrate.

1, 2, and 3A, a gate line GL extending in the first direction D1 on the first substrate 110, and a gate electrode GE branched from the gate line GL. Gate wiring (GL, GE) including may be disposed.

Gate wiring (GL, GE) is made of aluminum-based metals such as aluminum (Al) and aluminum alloys, silver-based metals such as silver (Ag) and silver alloys, copper-based metals such as copper (Cu) and copper alloys, and molybdenum (Mo). ) and molybdenum alloys, molybdenum-based metals, chromium (Cr), titanium (Ti), tantalum (Ta), etc.

Additionally, the gate wires GL and GE may have a multi-layer structure including two or more conductive films (not shown) with different physical properties. For example, one conductive layer of the multi-layer structure may be made of a low resistivity metal, such as aluminum-based metal, silver-based metal, copper-based metal, etc., to reduce signal delay or voltage drop, and other One conductive film may be made of a material with excellent contact characteristics with indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metal, chromium, titanium, tantalum, etc.

Good examples of this combination include a chrome lower film and an aluminum upper film, an aluminum lower film and a molybdenum upper film, and a titanium lower film and a copper upper film. However, the present invention is not limited to this, and the gate wiring (GL, GE) may be made of various metals and conductors. Gate wiring (GL, GE) can be made simultaneously through the same process.

A first insulating film 120 may be disposed on the first substrate 110 on which the gate wires GL and GE are disposed. The first insulating film 120 is also called a gate insulating film. The first insulating film 120 may include silicon oxide (SiOx) or silicon nitride (SiNx). Additionally, the first insulating film 120 may further include aluminum oxide, titanium oxide, tantalum oxide, or zirconium oxide.

A semiconductor layer SM may be disposed on the first insulating film 120. The semiconductor layer (SM) is made of amorphous silicon, or an oxide semiconductor containing at least one element selected from the group consisting of gallium (Ga), indium (In), tin (Sn), and zinc (Zn). ) can be done.

For example, oxide semiconductors include zinc oxide (ZnO), zinc-tin oxide (ZTO), zinc-indium oxide (ZIO), indium oxide (InO), titanium oxide (TiO), and indium-gallium-zinc oxide (IGZO). , and may include at least one selected from the group consisting of indium-zinc-tin oxide (IZTO). Although not shown in the drawing, an ohmic contact layer may be disposed on the semiconductor layer SM.

In one embodiment of the present invention, the semiconductor layer SM is shown as substantially overlapping the gate electrode GE, but is not limited thereto, and the semiconductor layer SM is disposed to substantially overlap a data line to be described later. It could be.

A data line (DL) extending in a second direction (D2) crossing the first direction (D1) on the first substrate 110 on which the semiconductor layer (SM) is disposed, and a source electrode branched from the data line (DL) Data lines (DL, SE, DE) including (SE) and a drain electrode (DE) disposed to be spaced apart from the source electrode (SE) may be disposed.

The data line DL may have a bent shape identical to the bent shape of the pixel electrode PE, which will be described later. That is, the data line DL may have a shape that is bent at least once on a plane. For example, the data line DL may be bent to have an angle of about 7 to 15 degrees with a virtual reference line perpendicular to the direction in which the gate line GL extends.

The width W ₁ of the data line DL in the first direction D1 may be 3 μm or more and 4 μm or less.

The data wires DL, SE, and DE may include the same material as the gate wires GL and GE described above. Data wires (DL, SE, DE) can be made simultaneously in the same process.

The gate electrode (GE), semiconductor layer (SM), source electrode (SE), and drain electrode (DE) constitute a thin film transistor (T).

A second insulating film 130 may be disposed on the first substrate 110 on which the data lines DL, SE, and DE are disposed. The second insulating film 130 is also called an interlayer insulating film. The second insulating film 130 may include silicon oxide (SiOx) or silicon nitride (SiNx). Additionally, the second insulating film 130 may further include aluminum oxide, titanium oxide, tantalum oxide, or zirconium oxide.

Color filters CF1, CF2, and CF3 may be disposed on the second insulating film 130. The color filters CF1, CF2, and CF3 may be one of red, green, blue, cyan, magenta, yellow, and white. Three basic colors, such as red, green, and blue, or cyan, magenta, and yellow, may constitute a basic pixel group for forming a color.

A protective layer 140 may be disposed on the first substrate 110 on which the color filters CF1, CF2, and CF3 are disposed. The protective layer 140 may have a single-layer or multi-layer structure including silicon oxide, silicon nitride, a photosensitivity organic material, or a silicon-based low-k insulating material. The protective layer 140 may have a thickness of 1.0 μm to 3.5 μm.

Referring to FIGS. 1, 2, and 3B, a common electrode CE may be disposed on the protective layer 140. The common electrode CE may be disposed as a planar plate on the entire surface of the first substrate 110 . Additionally, the common electrode (CE) may have an opening (CE_H) formed in an area corresponding to the above-described drain electrode (DE).

The pixel electrode (PE), which will be described later, may be connected to the drain electrode (DE) through the opening (CE_H) of the common electrode (CE).

The common electrode (CE) may be made of a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or aluminum zinc oxide (AZO).

Referring to FIGS. 1, 2, and 3C, the third insulating film 150 may be disposed on the first substrate 110 on which the common electrode (CE) is disposed. The third insulating film 150 may include silicon oxide (SiOx) or silicon nitride (SiNx). Additionally, the third insulating film 150 may further include aluminum oxide, titanium oxide, tantalum oxide, or zirconium oxide.

A first contact hole ( H1) is formed, and a portion of the third insulating film 150 is removed to form a second contact hole H2 exposing a portion of the common electrode CE.

The first contact hole H1 may be formed in an area corresponding to the drain electrode DE, and the second contact hole H2 may be formed in an area corresponding to the data line DL. That is, the second contact hole H2 may have substantially the same shape as the data line DL on a plane. For example, when the data line DL is bent at least once or more on a plane, the second contact hole H2 may also be bent at least once on a plane. The width W ₂ of the second contact hole H2 in the first direction D1 may be 3 μm or more and 7 μm or less.

Referring to FIGS. 1, 2, and 3D, a pixel electrode PE may be disposed on the third insulating film 150. The pixel electrode (PE) is electrically connected to the drain electrode (DE) through the first contact hole (H1).

The pixel electrode PE may include a stem portion and a plurality of branch portions obliquely extending from the stem portion. The plurality of branches may have a shape bent at least once or more on a plane to implement a multi-domain.

The pixel electrode (PE) may be made of a transparent conductive material. For example, the pixel electrode (PE) may be made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or aluminum zinc oxide (AZO).

Referring to FIGS. 1, 2, and 3E, black matrices 161 and 162 may be disposed on the first substrate 110 on which the pixel electrode (PE) is disposed.

The black matrices 161 and 162 may be made of a metal such as chromium oxide (CrOx), an opaque organic film material, or a photosensitive composition. For example, the photosensitive composition may include a binder resin, polymerizable monomer, polymerizable oligomer, pigment, dispersant, and photoinitiator. Black pigment or black resin may be used.

The black matrices 161 and 162 are disposed along the gate line GL to overlap the first light blocking portion 161 and the data line DL, and to overlap the data line DL. may include a second light blocking portion 162.

The second light blocking portion 162 may have substantially the same shape as the data line DL in a plan view. For example, when the data line DL has a shape that is bent at least once or more on a plane, the second light blocking portion 162 may also have a shape that is bent at least once or more on a plane.

The second light blocking portion 162 may directly contact the common electrode CE through the second contact hole H2 of the third insulating film 150. When the second light blocking part 162 is in direct contact with the common electrode CE, the adhesion is superior to that when the second light blocking part 162 is disposed on the third insulating film 150.

As a result, the width W ₃ of the second light blocking portion 162 in the first direction D1 can be formed to be 3 μm or more and 7 μm or less, thereby improving the aperture ratio. Additionally, since the second light blocking portion 162 is disposed to overlap the data line DL, it can prevent external light from being reflected by the data line DL.

In FIG. 2, the second light blocking portion 162 is shown as having a wider width than the second contact hole H2 of the third insulating film 150, but the width is not necessarily limited thereto, and the second light blocking portion 162 is It may have a smaller width than the second contact hole H2 of the third insulating film 150. That is, at least a portion of the second light blocking portion 162 may or may not be disposed on the third insulating film 150 .

Although not shown, column spacers (not shown) may be further disposed on the black matrices 161 and 162. The column spacer (not shown) may be formed simultaneously with the black matrices 161 and 162 through a single process.

Although not shown, a lower alignment layer may be disposed on the pixel electrode (PE) and the black matrices 161 and 162. The lower alignment layer may be a vertical alignment layer and may include a photoreactive material.

The opposing substrate 200 may include a second substrate 210 and an upper alignment layer 220. The second substrate 210 is an insulating substrate made of transparent glass or plastic. An upper alignment layer 220 may be disposed on the second substrate 210 . The upper alignment layer may be made of the same material as the lower alignment layer described above.

FIGS. 4A to 4G are cross-sectional views for explaining a method of manufacturing a display device according to an embodiment of the present invention.

Referring to FIG. 4A, a gate wiring including a gate electrode GE is formed on a first substrate 110 made of transparent glass or plastic. The gate wiring may be formed on the same layer and may be formed through the same process.

A first insulating film 120 may be formed on the first substrate 110 on which the gate wiring is formed. The first insulating film 120 may be formed using a chemical vapor deposition process, spin coating process, sputtering process, vacuum deposition process, printing process, etc.

The semiconductor layer SM may be formed on the first substrate 110 on which the first insulating film 120 is formed to overlap the gate electrode GE. Subsequently, a data wire including a source electrode (SE) and a drain electrode (DE) may be formed on the semiconductor layer (SM).

The source electrode SE may be formed to overlap one end of the semiconductor layer SM, and the drain electrode DE may be formed to overlap the other end of the semiconductor layer SM while being spaced apart from the source electrode SE. Data wires may be formed on the same layer and may be formed through the same process.

The gate electrode (GE), semiconductor layer (SM), source electrode (SE), and drain electrode (DE) constitute a thin film transistor (T).

Subsequently, the second insulating film 130 may be formed on the first substrate 110 on which the data wires are formed. The second insulating film 130 may be formed using a chemical vapor deposition process, spin coating process, sputtering process, vacuum deposition process, printing process, etc.

Referring to FIG. 4B, color filters CF1, CF2, and CF3 may be formed on the second insulating film 130. Subsequently, a protective layer 140 may be applied on the color filters CF1, CF2, and CF3. The protective layer 140 may be formed using a chemical vapor deposition process, spin coating process, sputtering process, vacuum deposition process, printing process, etc.

Referring to FIG. 4C, a common electrode (CE) may be formed on the entire surface of the first substrate 110 on which the protective layer 140 is formed. An opening (CE_H) may be formed in an area corresponding to the drain electrode (DE) of the common electrode (CE).

Referring to FIG. 4D, a third insulating film 150 may be formed on the first substrate 110 on which the common electrode (CE) is formed. The third insulating film 150 may be formed using a chemical vapor deposition process, spin coating process, sputtering process, vacuum deposition process, and printing process.

Referring to FIG. 4E, a first contact hole ( H1), and a second contact hole H2 that penetrates the third insulating film 150 and exposes a portion of the common electrode CE may be formed.

The first contact hole H1 and the second contact hole H2 may be formed through the same process.

The first contact hole H1 and the second contact hole H2 may be formed using, for example, an etching process.

The second contact hole H2 may be formed to have substantially the same shape as the data line DL on a plane surface. For example, when the data line DL has a shape that is bent at least once or more on a plane, the second contact hole H2 may also be formed in a shape that is bent at least once or more on a plane. Additionally, the width (W ₂ ) of the second contact hole (H2) may be formed from 3 ㎛ or more to 7 ㎛ or less.

Referring to FIG. 4F, a pixel electrode (PE) may be formed on the third insulating film 150. The pixel electrode PE may be electrically connected to the drain electrode DE through the first contact hole H1.

Referring to FIG. 4G, on the third insulating film 150 on which the pixel electrode (PE) is formed, a first light blocking part 161 overlapping with the gate line (GL) and a second light blocking part overlapping with the data line (DL) (162) can be formed.

The second light blocking portion 162 may be formed to directly contact the common electrode (CE) through the second contact hole (H2).

The second light blocking portion 162 may be formed to have substantially the same shape as the data line DL in a plan view. For example, when the data line DL has a shape that is bent at least once or more on a plane, the second light blocking portion 162 may also be formed in a shape that is bent at least once or more on a plane. Additionally, the width W ₃ of the second light blocking portion 162 may be 3 μm or more and 7 μm or less.

At least a portion of the second light blocking portion 162 may or may not be disposed on the third insulating film 150 .

The display device according to the present invention can improve the aperture ratio by forming a black matrix overlapping with the data line to a certain width or less.

In the display device according to the present invention, the black matrix overlapping the data line is formed to be in direct contact with the common electrode through an insulating film to improve the adhesion of the black matrix, thereby forming the black matrix to a certain width or less.

The display device manufacturing method according to the present invention proceeds with the process of forming a contact hole exposing the drain electrode in the insulating film and simultaneously exposing the common electrode overlapping the data line, thereby forming the black matrix within a certain width without adding a separate process. It can be formed as

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is commonly known in the technical field to which the present invention pertains that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be clear to those who have the knowledge of.

100: display board
200: opposing substrate
300: Liquid crystal layer

Claims (15)

first substrate;
a gate line disposed on the first substrate and extending in a first direction;
a data line insulated from the gate line and extending in a second direction intersecting the first direction;
a thin film transistor connected to the gate line and the data line;
a common electrode disposed on the gate line and the data line;
an insulating film disposed on the common electrode;
a pixel electrode disposed on the insulating film and connected to the thin film transistor through the insulating film; and
It includes a black matrix disposed on the pixel electrode,
The black matrix includes a first light blocking portion overlapping the gate line; and
It includes a second light blocking portion overlapping the data line,
The insulating film has at least one contact hole exposing the common electrode,
The contact hole and the second light blocking portion have substantially the same shape as the data line on a plane,
The second light blocking portion is in direct contact with the common electrode through the contact hole. delete The display device of claim 1, wherein the second light blocking portion has a width of 3 μm or more and 7 μm or less. The display device of claim 1, wherein the data line is bent at least once on a plane. The display device of claim 4, wherein the second light blocking part has a shape that is bent at least once in a plane. delete delete The display device of claim 1, wherein the contact hole has a width of 3 ㎛ or more and 7 ㎛ or less. The display device of claim 1, wherein the contact hole has a shape that is bent at least once in a plane. The display device of claim 1, wherein at least a portion of the second light blocking unit is disposed on the insulating film. forming a gate line extending in a first direction, a data line extending in a second direction intersecting the first direction, and a thin film transistor connected to the gate line and the data line on a first substrate;
forming a common electrode on the gate line and the data line;
forming an insulating film on the common electrode;
forming a contact hole in the insulating film having substantially the same shape as the data line on a plane;
forming a pixel electrode on the insulating film; and
Forming a black matrix including a first light-shielding portion overlapping the gate line and a second light-shielding portion overlapping the data line on the insulating film on which the pixel electrode is formed,
The second light blocking portion is formed to directly contact the common electrode through the contact hole,
The contact hole and the second light blocking portion have substantially the same shape as the data line on a plane. delete The method of claim 11 , wherein the second light blocking portion is formed to have a width of 3 μm or more and 7 μm or less. The method of claim 11 , wherein the contact hole is formed to have a width of 3 μm or more and 7 μm or less. The method of manufacturing a display device according to claim 11, wherein the data line is formed to have a shape that is bent at least once in a plane.

Images