KR102585551B1 - Semiconductor substrate processing equipment with reduced substrate replacement time - Google Patents

Semiconductor substrate processing equipment with reduced substrate replacement time Download PDF

Info

Publication number
KR102585551B1
KR102585551B1 KR1020210124068A KR20210124068A KR102585551B1 KR 102585551 B1 KR102585551 B1 KR 102585551B1 KR 1020210124068 A KR1020210124068 A KR 1020210124068A KR 20210124068 A KR20210124068 A KR 20210124068A KR 102585551 B1 KR102585551 B1 KR 102585551B1
Authority
KR
South Korea
Prior art keywords
substrates
substrate
load lock
chamber
efem
Prior art date
Application number
KR1020210124068A
Other languages
Korean (ko)
Other versions
KR20230040662A (en
Inventor
김창영
최영
신종민
Original Assignee
주식회사 나인벨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 나인벨 filed Critical 주식회사 나인벨
Priority to KR1020210124068A priority Critical patent/KR102585551B1/en
Priority to PCT/KR2022/012908 priority patent/WO2023043088A1/en
Publication of KR20230040662A publication Critical patent/KR20230040662A/en
Application granted granted Critical
Publication of KR102585551B1 publication Critical patent/KR102585551B1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J11/00Manipulators not otherwise provided for
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J11/00Manipulators not otherwise provided for
    • B25J11/0095Manipulators transporting wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00Gripping heads and other end effectors
    • B25J15/0052Gripping heads and other end effectors multiple gripper units or multiple end effectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명 기판 교체시간이 단축된 반도체 기판 처리장치는, 복수의 기판을 수납하는 EFEM; 상기 EFEM으로부터 처리할 기판을 공급받거나 처리된 기판을 다시 EFEM으로 전달하며, 상기 EFEM으로부터 공급받거나 전달될 기판이 평면상에서 삼각형 배치를 이루도록 3장이 이격된 상태로 고정핀 상에 올려져 대기하는 로드록 챔버; 상기 로드록 챔버를 포함하여 방사형으로 연결 배치되어 진공 영역을 형성하며, 내부에는 3장의 기판이 평면상에서 삼각형 배치를 이루면서 로딩 또는 언로딩될 수 있도록 3세트의 정전척 및 리프트핀이 구비되는 공정 챔버; 및 상기 로드록 챔버와 공정 챔버 사이의 진공 영역에 구비된 상태로 로드록 챔버로부터 기판을 공정 챔버 내부로 로딩하거나 공정 챔버에서 처리가 끝난 기판을 다시 로드록 챔버로 언로딩하며, 로드록 챔버에 대기 중인 3장의 기판을 한번에 떠서 공정 챔버로 로딩하거나 처리가 끝난 3장의 기판을 한번에 다시 로드록 챔버로 언로딩하기 위해 3갈래로 분기된 포크와 더불어 상기 포크의 끝단에는 상기 3장의 기판이 각각 올려질 수 있도록 핸드가 구비되는 기판 이송유닛;을 포함하는 것을 특징으로 한다.The semiconductor substrate processing apparatus of the present invention with reduced substrate replacement time includes an EFEM that accommodates a plurality of substrates; A load lock that receives substrates to be processed from the EFEM or transfers the processed substrates back to the EFEM, and waits for three substrates to be supplied or delivered from the EFEM by being placed on a fixing pin and spaced apart to form a triangular arrangement on a plane. chamber; A process chamber that includes the load lock chamber and is radially connected to form a vacuum area, and is equipped with three sets of electrostatic chucks and lift pins so that three substrates can be loaded or unloaded in a triangular arrangement on a plane. ; and loading a substrate from the load lock chamber into the process chamber in a state provided in a vacuum area between the load lock chamber and the process chamber, or unloading a substrate that has been processed in the process chamber back into the load lock chamber. In order to load three waiting substrates into the process chamber at once or unload three processed substrates back into the load lock chamber at once, there is a fork with a three-pronged fork, and each of the three substrates is placed at the end of the fork. It is characterized in that it includes a substrate transfer unit provided with a hand so that the substrate can be moved.

Description

기판 교체시간이 단축된 반도체 기판 처리장치 {Semiconductor substrate processing equipment with reduced substrate replacement time}Semiconductor substrate processing equipment with reduced substrate replacement time}

본 발명은 기판 교체시간이 단축된 반도체 기판 처리장치에 관한 것으로, 좀 더 상세하게는 평면상에서 삼각형으로 배치된 3장의 반도체 기판을 로드록 챔버에서 공정 챔버로 한번에 이송 및 로딩하거나 다시 로드록 챔버로 언로딩할 수 있으며, 기판의 로딩 시 3장의 기판 중 티칭이 필요한 기판만을 신속하게 티칭하면서 리프트핀 상에 순차적으로 로딩하므로 기판의 교체시간 단축과 더불어 전체 반도체 처리의 스루풋이 현저히 향상되는 반도체 기판 처리장치에 관한 것이다.The present invention relates to a semiconductor substrate processing device with reduced substrate replacement time. More specifically, the present invention relates to a semiconductor substrate processing device that transfers and loads three semiconductor substrates arranged in a triangle on a plane at once from the load lock chamber to the process chamber or back to the load lock chamber. Semiconductor substrate processing that can be unloaded, and when loading a substrate, only the substrate that requires teaching among the three substrates is taught quickly and sequentially loaded on the lift pin, thereby reducing substrate replacement time and significantly improving the throughput of overall semiconductor processing. It's about devices.

일반적으로, 반도체 기판 처리장치의 기판 이송유닛은, 반도체 기판인 웨이퍼(wafer)를 이송하기 위한 로봇 아암들을 다수의 모터를 이용하여 3-자유도 이상의 운동이 가능하도록 상부(upper) 아암과 하부(lower) 아암이 상하로 적층 배치된 동축 방식의 다중 아암들로 구성된다.In general, the substrate transfer unit of a semiconductor substrate processing apparatus uses multiple motors to transport robot arms for semiconductor substrates, such as wafers, with an upper arm and a lower arm to enable movement of more than 3 degrees of freedom. lower) It consists of multiple coaxial arms with the arms stacked up and down.

이 때, 최외각 축은 회전 중심축 주위로 다중 아암들을 회전시키기 위한 허브(hub)에 결합되고, 2개의 내부축은 독립적인 벨트 및 풀리 구성을 통하여 각각에 연결될 수 있다.At this time, the outermost axis is coupled to a hub for rotating multiple arms around the central axis of rotation, and the two inner axes can be connected to each other through independent belt and pulley configurations.

이와 같은 다중 아암 구조의 기판 이송유닛의 한가지 예가 국내 등록특허 제0912432호(이하, ‘선행문헌 1’이라고 칭함)에 개시되어 있다.One example of a substrate transfer unit with such a multi-arm structure is disclosed in Korean Patent No. 0912432 (hereinafter referred to as ‘Prior Document 1’).

그러나, 이와 같은 다중 아암 구조의 기판 이송유닛은 각 층마다 핸드가 하나씩 구비된 형태이므로 EFEM(Equipment Front End Module)으로부터 기판(wafer)을 로드록 챔버(loadlock chamer)를 경유하여 박막의 증착 또는 식각 등의 처리를 위해 공정 챔버(P/M chamber)로 이송할 때, EFEM과 공정 챔버 사이에서 기판을 한장씩 이송하면서 교체하기 때문에 기판 교체시간이 증가될 수밖에 없고, 이와 더불어 상기 기판 교체시간동안 로드록 챔버와 진공 챔버의 진공 분위기가 일정 부분 파기되므로 이로 인해 기판의 교체 시마다 다시 진공 분위기를 형성해야 하므로 결국 기판 처리를 위한 전체 스루풋(throughput)의 감소로 인해 반도체 기판의 공정 효율이 대폭 저하되는 문제점이 있었다. However, since this type of substrate transfer unit with a multi-arm structure is equipped with one hand for each layer, the substrate (wafer) is transferred from the EFEM (Equipment Front End Module) through a loadlock chamber for deposition or etching of a thin film. When transferring to a process chamber (P/M chamber) for processing, etc., the substrate replacement time is inevitably increased because the substrates are transferred and replaced one by one between the EFEM and the process chamber, and in addition, load lock occurs during the substrate replacement time. Since the vacuum atmosphere of the chamber and the vacuum chamber is destroyed to a certain extent, the vacuum atmosphere must be created again every time the substrate is replaced, which ultimately leads to a decrease in the overall throughput for substrate processing, resulting in a significant decrease in the process efficiency of the semiconductor substrate. there was.

이러한 이유로 종래 보다 빠른 기판 교체를 위해 한번에 2장의 웨이퍼를 동시에 이송 및 로딩/언로딩할 수 있도록 상, 하부에 수평 방향으로 각각 한쌍의 더블 핸드를 갖는 다중 아암 구조의 기판 이송유닛(국내 등록특허 제1338857호, 이하 ‘선행문헌 2’이라고 칭함)이 개시된 바 있다.For this reason, for faster substrate replacement than before, a substrate transfer unit with a multi-arm structure (domestic registered patent) has a pair of double hands in the upper and lower horizontal directions to enable simultaneous transfer and loading/unloading of two wafers at a time. No. 1338857, hereinafter referred to as ‘Prior Document 2’) has been disclosed.

도 1에는 이러한 더블 핸드를 갖는 다중 아암 구조의 기판 이송유닛이 적용된 종래 기판 처리장치가 도시되어 있다.Figure 1 shows a conventional substrate processing apparatus to which a substrate transfer unit with a double-hand, multi-arm structure is applied.

상기 선행문헌 2의 기판 이송유닛(10)은, 진공 챔버 내에 배치되고 공정 챔버(P/M chamber)와 웨이퍼 등의 기판을 저장하는 공간 사이에서 기판을 이송하며, 상, 하단에 각각 2개씩, 총 4개의 핸드를 구비한다.The substrate transfer unit 10 of the prior art document 2 is disposed in a vacuum chamber and transfers a substrate between a process chamber (P/M chamber) and a space for storing substrates such as wafers, two each at the top and bottom, A total of 4 hands are provided.

즉, 상기 4개의 핸드는, 길이가 긴 직사각 형상을 갖는 리니어 가이드 모듈의 위쪽에 슬라이딩 가능하게 배치되는 2개의 핸드를 구비하는 상부 핸드(더블 핸드), 상기 상부 핸드의 아래쪽인 상기 리니어 가이드 모듈의 좌측에 배치되어 단일의 핸드(싱글 핸드)를 구비하는 좌측 부재 및 상기 리니어 가이드 모듈의 우측에 배치되어 단일의 핸드(싱글 핸드)를 구비하는 우측 부재를 갖는 하부 핸드(리니어 가이드 모듈의 좌, 우측에 싱글 핸드 각 1개씩 배치)를 포함한다.That is, the four hands include an upper hand (double hand) having two hands slidably disposed above a linear guide module having a long rectangular shape, and an upper hand (double hand) of the linear guide module below the upper hand. A lower hand (left and right sides of the linear guide module) having a left member disposed on the left and provided with a single hand (single hand) and a right member disposed on the right side of the linear guide module and provided with a single hand (single hand) Includes one single hand each).

이에 따라 상기 상, 하부 핸드는 리니어 가이드 모듈을 따라 전후 방향으로 이동될 수 있도록 구성된다.Accordingly, the upper and lower hands are configured to move in the forward and backward directions along the linear guide module.

또한, 처리할 반도체 기판(wafer) 또는 처리된 기판을 EFEM에 적재되며, 상기 EFEM 내부에 구비된 이송 로봇(ATM Robot)이 처리할 기판을 로드록 챔버(L/L)로 한 장씩 공급하거나 처리된 기판을 로드록 챔버로부터 한 장씩 취출한다. In addition, the semiconductor substrate (wafer) to be processed or the processed substrate is loaded into the EFEM, and the transfer robot (ATM Robot) provided inside the EFEM supplies or processes the substrates to be processed one by one into the load lock chamber (L/L). The prepared substrates are taken out one by one from the load lock chamber.

그러므로, 상기 진공영역 내의 기판 이송유닛(10)은 상, 하부에 다중으로 한쌍의 핸드를 가짐에 따라 공정 챔버에 기판을 로딩할 때에는 상부 또는 하부 핸드를 개별 구동함으로써 한번에 최대 2장의 기판을 로딩 또는 언로딩할 수 있다. Therefore, the substrate transfer unit 10 in the vacuum area has multiple pairs of hands on the upper and lower sides, so when loading substrates into the process chamber, the upper or lower hands are individually driven to load up to two substrates at a time. Can be unloaded.

그러나, 선행문헌 2에 개시된 종래 반도체 기판 이송유닛(10)은, 리니어 가이드 모듈을 구비하고 상기 리니어 가이드 모듈에 장착된 상부 및 하부 핸드를 전후 방향으로 슬라이딩 이동시킴에 따라 아암의 하중 및 부피의 증가되고, 이로 인해 결국 시간 경과에 따라 핸드 끝단에서 처짐이 발생되어 구조적인 강성의 저하와 더불어 처짐에 의해 기판의 이송 및 로딩/언로딩 작업의 정밀도가 저하되는 문제점이 발생되었다. However, the conventional semiconductor substrate transfer unit 10 disclosed in Prior Document 2 includes a linear guide module and increases the load and volume of the arm by sliding the upper and lower hands mounted on the linear guide module in the forward and backward directions. As a result, sagging occurs at the end of the hand over time, which leads to a decrease in structural rigidity and a decrease in the precision of substrate transfer and loading/unloading operations due to sagging.

또한, 최근에는 공정 챔버(P/M chamber)의 구조를 스루풋 증가를 위해 3장의 기판이 챔버 내에 평면상에서 삼각형 형태로 배치되도록 리프트핀 및 정전척(Electro Static Chuck; ESC) 상에 로딩시킨 후 3장의 기판을 동시에 박막 증착 또는 식각 등의 처리를 수행하는 배치(batch) 타입의 공정 챔버가 개발 및 보편화되어 있다.In addition, recently, in order to increase the throughput, the structure of the process chamber (P/M chamber) was loaded on a lift pin and an electrostatic chuck (ESC) so that three substrates were arranged in a triangular shape on a plane within the chamber. Batch-type process chambers that simultaneously process multiple substrates, such as thin film deposition or etching, have been developed and become popular.

그러나, 상기 선행문헌 1, 2에 개시된 싱글 핸드 또는 더블 핸드 구조의 종래 기판 이송유닛으로는 상기 기판 3장이 평면상에서 삼각형 형태로 로딩 또는 언로딩되는 배치 타입의 공정 챔버 내에 1장 또는 최대 2장의 기판을 여러 번에 나누어 이송 및 로딩/언로딩해야 하므로 여전히 기판의 교체시간이 많이 지체될 수밖에 없고, 이에 따라 기판 처리의 공정 효율 및 스루풋이 저하되는 문제점이 있었다.However, in the conventional substrate transfer unit of the single-hand or double-hand structure disclosed in the preceding documents 1 and 2, one or at most two substrates are placed in a batch-type process chamber in which the three substrates are loaded or unloaded in a triangular shape on a plane. Since the substrate must be transferred and loaded/unloaded several times, there is still a long delay in replacing the substrate, and as a result, there is a problem in that the process efficiency and throughput of substrate processing are reduced.

또한, 이러한 공정 챔버 내에 장착된 정전척 등 소모성 부품은 정기적인 교체가 불가피한데, 상기 정전척을 새 제품으로 교체하는 과정에서 정전척의 중심점이 미세하게 틀어진 만큼 기판을 로딩할 때 기판이 교체된 정전척의 새로운 중심점에 정확히 놓여질 수 있도록 기판의 로딩 위치를 교정하는 티칭(teaching) 과정이 반드시 필요하다.In addition, regular replacement of consumable parts such as electrostatic chucks installed in these process chambers is inevitable. As the center point of the electrostatic chuck is slightly distorted in the process of replacing the electrostatic chuck with a new product, the electrostatic chuck that the substrate is replaced with when loading the substrate is inevitable. A teaching process is necessary to correct the loading position of the board so that it can be accurately placed at the new center point of the chuck.

그러나, 종래에는 싱글 핸드 아암 구조의 기판 이송유닛을 이용하여 이송된 기판을 한 장씩 일일이 로드록 챔버로부터 공정 챔버까지 이송한 후 공정 챔버 내부에서 티칭 후 로딩하는 형태로 반복 수행하고 있으며, 이에 따라 기판의 이송에서부터 티칭 후 로딩까지 기판의 교체시간이 반복적으로 소요될 수밖에 없으므로 이 또한 기판 교체시간의 지체 및 공정 효율이 저하되는 문제점으로 남아 있었다.However, conventionally, using a substrate transfer unit with a single hand arm structure, the transferred substrates are transferred one by one from the load lock chamber to the process chamber, and then teaching and loading are performed repeatedly inside the process chamber. As a result, the substrate is transferred. Since the substrate replacement time inevitably took repeatedly from transfer to loading after teaching, this also remained a problem of delay in substrate replacement time and decreased process efficiency.

대한민국 등록특허 제0912432호 (2009.08.10. 등록)Republic of Korea Patent No. 0912432 (registered on August 10, 2009)

대한민국 등록특허 제1338857호 (2013.11.27. 등록)Republic of Korea Patent No. 1338857 (registered on November 27, 2013)

이에 본 발명은 상기와 같은 문제점을 해소할 수 있도록 안출된 것으로, 평면상에서 삼각형으로 배치된 3장의 반도체 기판을 로드록 챔버에서 공정 챔버로 한번에 이송 및 로딩하거나 다시 로드록 챔버로 언로딩할 수 있으며, 기판의 로딩 시 3장의 기판 중 티칭이 필요한 기판만을 신속하게 티칭하면서 리프트핀 상에 순차적으로 로딩하므로 기판의 교체시간 단축과 더불어 전체 반도체 처리의 스루풋이 현저히 향상되는 반도체 기판 처리장치를 제공하는 것을 목적으로 한다.Accordingly, the present invention was developed to solve the above problems, and three semiconductor substrates arranged in a triangle on a plane can be transferred and loaded from the load lock chamber to the process chamber at once, or unloaded back to the load lock chamber. , When loading a substrate, only the substrate that requires teaching among the three substrates is taught quickly and sequentially loaded on the lift pin, thereby reducing substrate replacement time and significantly improving the throughput of overall semiconductor processing. The purpose.

상기와 같은 목적을 달성하기 위한 본 발명은 일 실시예에 따라, 복수의 기판을 수납하는 EFEM; 상기 EFEM으로부터 처리할 기판을 공급받거나 처리된 기판을 다시 EFEM으로 전달하며, 상기 EFEM으로부터 공급받거나 전달될 기판이 평면상에서 삼각형 배치를 이루도록 3장이 이격된 상태로 고정핀 상에 올려져 대기하는 로드록 챔버; 상기 로드록 챔버를 포함하여 방사형으로 연결 배치되어 진공 영역을 형성하며, 내부에는 3장의 기판이 평면상에서 삼각형 배치를 이루면서 로딩 또는 언로딩될 수 있도록 3세트의 정전척 및 리프트핀이 구비되는 공정 챔버; 및 상기 로드록 챔버와 공정 챔버 사이의 진공 영역에 구비된 상태로 로드록 챔버로부터 기판을 공정 챔버 내부로 로딩하거나 공정 챔버에서 처리가 끝난 기판을 다시 로드록 챔버로 언로딩하며, 로드록 챔버에 대기 중인 3장의 기판을 한번에 떠서 공정 챔버로 로딩하거나 처리가 끝난 3장의 기판을 한번에 다시 로드록 챔버로 언로딩하기 위해 3갈래로 분기된 포크와 더불어 상기 포크의 끝단에는 상기 3장의 기판이 각각 올려질 수 있도록 핸드가 구비되는 기판 이송유닛;을 포함하여 구성된다.According to one embodiment, the present invention for achieving the above object includes an EFEM that accommodates a plurality of substrates; A load lock that receives substrates to be processed from the EFEM or transfers the processed substrates back to the EFEM, and waits for three substrates to be supplied or delivered from the EFEM by being placed on a fixing pin and spaced apart to form a triangular arrangement on a plane. chamber; A process chamber that includes the load lock chamber and is radially connected to form a vacuum area, and is equipped with three sets of electrostatic chucks and lift pins so that three substrates can be loaded or unloaded in a triangular arrangement on a plane. ; and loading a substrate from the load lock chamber into the process chamber in a state provided in a vacuum area between the load lock chamber and the process chamber, or unloading a substrate that has been processed in the process chamber back into the load lock chamber. In order to load three waiting substrates into the process chamber at once or unload three processed substrates back into the load lock chamber at once, there is a fork with a three-pronged fork, and each of the three substrates is placed at the end of the fork. It is configured to include a substrate transfer unit provided with a hand so that the substrate can be moved.

또한 일 실시예에 따라, 상기 기판 이송유닛의 포크는 가운데 갈래의 길이가 긴 ‘ ’ 형상을 갖는다.Additionally, according to one embodiment, the fork of the substrate transfer unit has a long middle prong. 'It has a shape.

또한 다른 실시예에 따라, 상기 포크의 3갈래 사이에는 보강바가 더 연결된 ‘ ’ 형상을 갖는다.Additionally, according to another embodiment, a reinforcing bar is further connected between the three prongs of the fork. 'It has a shape.

또한 일 실시예에 따라, 상기 로드록 챔버의 내부에는 상방을 향해 설치된 모터의 회전축을 중심으로 평면상에서 3갈래로 분기된 형상의 로테이션 척이 결합되고, 상기 로테이션 척이 120도만큼 로테이션하면서 EFEM으로부터 로테이션 척의 각 끝단에 구비된 고정핀에 3장의 기판이 차례로 올려져 공급되거나 고정핀에 올려진 3장의 기판이 EFEM으로 차례로 취출된다.In addition, according to one embodiment, a rotation chuck having a shape branched into three branches on a plane around the rotation axis of a motor installed upward is coupled to the inside of the load lock chamber, and the rotation chuck rotates by 120 degrees to separate the load from the EFEM. Three boards are sequentially placed on the fixing pins provided at each end of the rotation chuck and supplied, or the three boards placed on the fixing pins are sequentially taken out by the EFEM.

또한 일 실시예에 따라, 상기 공정 챔버 내부에 구비된 3세트의 리프트핀은 기판의 로딩을 위해 정전척 상면으로부터 최대로 상승한 끝단의 돌출 높이가 세트마다 각각 다르게 형성된다. In addition, according to one embodiment, the three sets of lift pins provided inside the process chamber are formed so that the protruding heights of the ends that rise to the maximum from the upper surface of the electrostatic chuck are different for each set for loading the substrate.

상술한 바와 같은 본 발명은, 평면상에서 삼각형으로 배치된 3장의 반도체 기판을 로드록 챔버에서 공정 챔버로 한번에 이송 및 로딩하거나 다시 로드록 챔버로 언로딩할 수 있으며, 기판의 로딩 시 3장의 기판 중 티칭이 필요한 기판만을 신속하게 티칭하면서 리프트핀 상에 순차적으로 로딩하므로 기판의 교체시간 단축과 더불어 전체 반도체 처리의 스루풋이 현저히 향상되는 효과가 있다.As described above, the present invention can transfer and load three semiconductor substrates arranged in a triangle on a plane at once from the load lock chamber to the process chamber or unload them back into the load lock chamber, and when loading the substrates, one of the three substrates By quickly teaching only the substrates that need teaching and loading them sequentially on the lift pins, this has the effect of shortening the substrate replacement time and significantly improving the throughput of overall semiconductor processing.

도 1은 더블 핸드 아암 구조의 기판 이송유닛이 적용된 종래 반도체 기판 처리장치의 개략도
도 2는 본 발명 기판 교체시간이 단축된 반도체 기판 처리장치를 일 실시예에 따라 보인 개략도
도 3은 도 2의 기판 이송유닛을 확대하여 보인 도면으로서, (a)는 평면도, (b)는 측면도
도 4는 도 2의 로드록 챔버를 확대하여 보인 도면으로서, (a)는 요부 종단면도, (b)는 평면도
도 5는 도 2의 공정 챔버를 확대하여 보인 도면으로서, (a)는 요부 사시도, (b)는 요부 측면도
Figure 1 is a schematic diagram of a conventional semiconductor substrate processing device equipped with a substrate transfer unit of a double hand arm structure.
Figure 2 is a schematic diagram showing a semiconductor substrate processing device with reduced substrate replacement time according to an embodiment of the present invention.
Figure 3 is an enlarged view of the substrate transfer unit of Figure 2, where (a) is a top view and (b) is a side view.
FIG. 4 is an enlarged view of the load lock chamber of FIG. 2, where (a) is a main longitudinal cross-sectional view and (b) is a top view.
Figure 5 is an enlarged view of the process chamber of Figure 2, where (a) is a perspective view of the main part and (b) is a side view of the main part.

본 명세서에서 사용한 용어는 단지 특정한 실시 예를 설명하기 위해 사용된 것으로서, 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 명세서에서, "포함하다" 또는 "가지다" 내지 "구비하다" 등의 용어는 본 명세서에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성 요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.The terms used in this specification are merely used to describe specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as “include,” “have,” or “equipped with” are intended to designate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in this specification. It should be understood that this does not preclude the existence or addition of other features, numbers, steps, operations, components, parts, or combinations thereof.

본 명세서에서 다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 나타낸다.Unless otherwise defined herein, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by a person of ordinary skill in the technical field to which the present invention pertains.

일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥상 가지는 의미와 일치하는 의미가 있는 것으로 해석되어야 하며, 본 명세서에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않아야 한다.Terms defined in commonly used dictionaries should be interpreted as having meanings consistent with the meanings they have in the context of the related technology, and unless clearly defined in this specification, should not be interpreted in an idealized or overly formal sense. It shouldn't be.

이하, 첨부된 도면을 참조하여 본 발명 기판 교체시간이 단축된 반도체 기판 처리장치의 구성 및 작동 관계에 대해 구체적으로 살펴보면 다음과 같다.Hereinafter, with reference to the attached drawings, the configuration and operational relationship of the semiconductor substrate processing apparatus of the present invention with reduced substrate replacement time will be examined in detail as follows.

도 2는 본 발명 기판 교체시간이 단축된 반도체 기판 처리장치를 일 실시예에 따라 보인 개략도이고, 도 3은 도 2의 기판 이송유닛을 확대하여 보인 도면으로서, (a)는 평면도, (b)는 측면도이며, 도 4는 도 2의 로드록 챔버를 확대하여 보인 도면으로서, (a)는 요부 종단면도, (b)는 평면도이고, 도 5는 도 2의 공정 챔버를 확대하여 보인 도면으로서, (a)는 요부 사시도, (b)는 요부 측면도이다.Figure 2 is a schematic diagram showing a semiconductor substrate processing apparatus with a reduced substrate replacement time according to an embodiment of the present invention, and Figure 3 is an enlarged view of the substrate transfer unit of Figure 2, where (a) is a top view and (b) is a side view, FIG. 4 is an enlarged view of the load lock chamber of FIG. 2, (a) is a longitudinal cross-sectional view of the main part, (b) is a top view, and FIG. 5 is an enlarged view of the process chamber of FIG. 2. (a) is a perspective view of the lower back, and (b) is a side view of the lower back.

이하, 도 2 내지 도 5를 참조하여 본 발명의 일 실시예에 따른 기판 교체시간이 단축된 반도체 기판 처리장치의 구성을 살펴보기로 한다.Hereinafter, the configuration of a semiconductor substrate processing apparatus with reduced substrate replacement time according to an embodiment of the present invention will be examined with reference to FIGS. 2 to 5.

먼저, 본 발명 기판 교체시간이 단축된 반도체 기판 처리장치(100)는, 먼저 장치의 레이아웃 일측(도 2에서 좌측)에 복수의 반도체 기판(S)을 수납하는 EFEM(110)이 구비된다.First, the semiconductor substrate processing apparatus 100 of the present invention with reduced substrate replacement time is first equipped with an EFEM 110 that accommodates a plurality of semiconductor substrates S on one side of the layout of the apparatus (left in FIG. 2).

또한, 상기 EFEM(110)의 일측(도 2에서 우측)에 인접하여 EFEM(110)으로부터 처리할 기판(S)을 공급받거나 처리된 기판(S)을 다시 EFEM(110)으로 전달하며, 상기 EFEM(110)으로부터 공급받거나 전달될 기판(S)이 평면상에서 삼각형 배치를 이루도록 3장의 기판(S)이 이격된 상태로 3세트의 고정핀(123, 도 4 참조) 상에 각각 올려져 대기하는 로드록 챔버(120)가 구비된다.In addition, adjacent to one side (right side in FIG. 2) of the EFEM 110, the substrate S to be processed is supplied from the EFEM 110 or the processed substrate S is delivered back to the EFEM 110, and the EFEM 110 A load in which three substrates (S) are spaced apart so that the substrates (S) to be supplied or delivered from (110) are placed in a triangular arrangement on a plane and placed on three sets of fixing pins (123, see FIG. 4) to wait. A lock chamber 120 is provided.

또한, 상기 로드록 챔버(120)를 포함하여 방사형으로 복수의 공정 챔버(130)가 연결 배치되어 밀폐된 진공 영역(VS; Vaccum Space, 도 2 참조)을 형성한다.In addition, a plurality of process chambers 130, including the load lock chamber 120, are radially connected to form a sealed vacuum space (VS; see FIG. 2).

상기 공정 챔버(130)의 내부에는 3장의 기판(S)이 평면상에서 삼각형 배치를 이루면서 로딩 또는 언로딩될 수 있도록 3세트의 정전척(ESC1, ESC2, ESC3) 및 리프트핀(LP)이 각각 구비된다. (도 5 참조)Inside the process chamber 130, three sets of electrostatic chucks (ESC1, ESC2, ESC3) and lift pins (LP) are provided so that three substrates (S) can be loaded or unloaded in a triangular arrangement on a plane. do. (see Figure 5)

여기서, 상기 공정 챔버(130)는 내부에 로딩된 반도체 기판(S) 상에 박막의 증착이나 식각 등의 반도체 기판 처리가 수행되는 진공 영역으로서, 통상 공정 챔버(130)의 일측에는 반도체 기판(S)이 로딩/언로딩될 수 있도록 선택적으로 개방되는 개폐 밸브(131, 도 5 참조)가 구비된다.Here, the process chamber 130 is a vacuum area in which semiconductor substrate processing, such as thin film deposition or etching, is performed on the semiconductor substrate (S) loaded therein. Typically, on one side of the process chamber 130, a semiconductor substrate (S) is placed. ) is provided with an opening/closing valve (131, see FIG. 5) that is selectively opened to enable loading/unloading.

또한, 상기 로드록 챔버(120)와 공정 챔버(130) 사이의 진공 영역(VS)에는 기판 이송유닛(140)이 구비된다.Additionally, a substrate transfer unit 140 is provided in the vacuum area VS between the load lock chamber 120 and the process chamber 130.

상기 기판 이송유닛(140)은 로드록 챔버(120)에 대기 중인 3장의 기판(S)을 한번에 떠서 공정 챔버(130) 내부로 이송 및 로딩하거나 공정 챔버(130)에서 처리가 끝난 3장의 기판(S)을 다시 로드록 챔버(120)로 한번에 언로딩 및 이송하기 위해 3갈래로 분기된 포크(142)와 더불어 상기 포크(142)의 끝단에는 상기 3장의 기판(S)이 각각 올려질 수 있도록 핸드(143)가 구비된다.The substrate transfer unit 140 lifts three substrates (S) waiting in the load lock chamber 120 at once and transfers and loads them into the process chamber 130, or transfers and loads three substrates (S) that have been processed in the process chamber 130. In order to unload and transfer S) back to the load lock chamber 120 at once, there is a fork 142 branched into three branches, and the three substrates S can be placed on the ends of the fork 142, respectively. A hand 143 is provided.

일 실시예에 따라, 상기 기판 이송유닛(140)의 포크(142)는 기본적으로 가운데 갈래의 길이가 긴 ‘ ’ 형상을 가질 수 있다.According to one embodiment, the fork 142 of the substrate transfer unit 140 basically has a long middle fork. 'It can have a shape.

다른 실시예에 따라, 도 3을 참조하면 상기 포크(142)는 포크 몸체의 3갈래 사이에 보강바(144)가 더 연결됨으로써 기계적인 강성이 보강된 ‘ ’ 형상을 가질 수 있다.According to another embodiment, referring to FIG. 3, the fork 142 has reinforced mechanical rigidity by further connecting a reinforcing bar 144 between the three prongs of the fork body. 'It can have a shape.

또한 도 4를 참조하여 상기 로드록 챔버(120)의 구성을 보다 자세히 살펴보면, 상기 로드록 챔버(120)의 내부에는 상방을 향해 설치된 모터(121)의 회전축(미도시)을 중심으로 평면상에서 3갈래로 분기된 형상의 로테이션 척(122)이 결합되고, 상기 로테이션 척(122)이 120도만큼 로테이션하면서 EFEM(110)으로부터 로테이션 척(122)의 각 끝단에 구비된 고정핀(123)에 3장의 기판(S)이 차례로 올려져 공급되거나 고정핀(123)에 올려진 3장의 기판(S)이 EFEM(110)으로 차례로 취출된다.In addition, looking at the configuration of the load lock chamber 120 in more detail with reference to FIG. 4, the inside of the load lock chamber 120 is 3 on a plane centered on the rotation axis (not shown) of the motor 121 installed upward. The rotation chuck 122 having a branched shape is coupled, and while the rotation chuck 122 rotates by 120 degrees, 3 pins are attached to the fixing pins 123 provided at each end of the rotation chuck 122 from the EFEM 110. A sheet of substrates (S) is sequentially mounted and supplied, or three substrates (S) mounted on the fixing pins (123) are sequentially taken out by the EFEM (110).

또한 도 5를 참조하면, 상기 공정 챔버(130) 내부에 구비된 3세트의 리프트핀(LP)은 기판(S)의 로딩을 위해 정전척(ESC) 상면으로부터 최대로 상승한 끝단의 돌출 높이(h1, h2, h3)가 세트마다 각각 다르게 형성된다. Also, referring to FIG. 5, the three sets of lift pins (LP) provided inside the process chamber 130 have a protruding height (h1) at the end that is raised to the maximum from the upper surface of the electrostatic chuck (ESC) for loading the substrate (S). , h2, h3) are formed differently for each set.

상기와 같이 3세트의 리프트핀(LP)의 돌출 높이(h1, h2, h3)를 각각 다르게 형성함으로써 필요 시 3세트의 리프트핀(LP)마다 선택적으로 티칭을 실시한 후 기판(S)의 로딩이 가능하며, 이를 도 5를 참조하여 보다 구체적으로 설명하면 다음과 같다.As described above, the protruding heights (h1, h2, h3) of the three sets of lift pins (LP) are formed differently, so that loading of the substrate (S) can be performed after selective teaching for each of the three sets of lift pins (LP) when necessary. It is possible, and this will be explained in more detail with reference to FIG. 5 as follows.

먼저, 상기 각 공정 챔버(130) 내부에는 평면상에서 삼각형으로 배치된 3개의 정전척(ESC1, ESC2, ESC3)과 상기 정전척으로부터 돌출되는 높이(h1>h2>h3)가 다른 3세트의 리프트핀(LP)이 구비된다.First, inside each process chamber 130, there are three electrostatic chucks (ESC1, ESC2, ESC3) arranged in a triangular shape on a plane and three sets of lift pins with different heights (h1>h2>h3) protruding from the electrostatic chucks. (LP) is provided.

이 후, 상기 정전척(ESC1, ESC2, ESC3)과 리프트핀(LP) 상방으로 기판 이송유닛(140)의 포크(142) 및 핸드(143)에 올려진 3장의 기판(S1, S2, S3)이 공정 챔버(130)의 개폐 밸브(131)를 통해 챔버(130) 내부로 진입하면 상기 리프트핀(LP)의 돌출된 상단에 기판(S1, S2, S3)을 각각 올려놓음으로써 상기 3장의 기판(S1, S2, S3)을 한번에 로딩할 수 있다.Afterwards, three substrates (S1, S2, S3) are placed on the fork 142 and hand 143 of the substrate transfer unit 140 above the electrostatic chuck (ESC1, ESC2, ESC3) and the lift pin (LP). When entering the inside of the chamber 130 through the opening/closing valve 131 of the process chamber 130, the three substrates S1, S2, and S3 are placed on the protruding top of the lift pin LP. (S1, S2, S3) can be loaded at once.

이 때, 만약 상기 정전척(ESC1, ESC2, ESC3) 모두가 티칭이 필요하지 않다면 포크(142)가 그대로 전체적으로 하강함으로써 각각 다른 돌출 높이(h1>h2>h3)를 가진 리프트핀의 상단에 3장의 기판이 첫 번째, 두 번째, 세 번째 기판(S1, S2, S3) 순으로 차례로 놓여지면서 기판(S1, S2, S3)의 로딩이 신속히 완료된다.At this time, if teaching is not required for all of the electrostatic chucks (ESC1, ESC2, and ESC3), the fork 142 is lowered as a whole, and three pieces are placed on the top of the lift pin with different protrusion heights (h1>h2>h3). As the substrates are placed sequentially into the first, second, and third substrates (S1, S2, and S3), loading of the substrates (S1, S2, and S3) is completed quickly.

그런데, 만약 상기 3개의 정전척(ESC1, ESC2, ESC3) 중 두 번째 정전척(ESC2)이 교체로 인해 중심점이 우측으로 1mm만큼 미세하게 변동된 경우를 가정하면, 이 경우에는 두 번째 기판(S2)을 두 번째 정전척(ESC2)의 리프트핀(LP) 위에 로딩하기 직전에 우측으로 1mm만큼 티칭한 후 로딩할 필요가 있다. However, assuming that the center point is slightly shifted to the right by 1 mm due to replacement of the second electrostatic chuck (ESC2) among the three electrostatic chucks (ESC1, ESC2, ESC3), in this case, the second substrate (S2 ), it is necessary to teach it 1mm to the right and then load it right before loading it on the lift pin (LP) of the second electrostatic chuck (ESC2).

따라서, 이 경우에는 먼저 첫 번째 정전척(ESC1)의 리프트핀(LP) 상단(h1)까지 포크(142)가 하강함으로써 3장의 기판(S1, S2, S3) 중 가운데 첫번째 기판(S1)이 리프트핀(LP) 상단에 올려져 로딩되고, 이 때 나머지 두장의 기판(S2, S3)은 아직 두 번째 및 세 번째 정전척(ESC2, ESC3)의 리프트핀(LP) 상단(h2, h3)에 로딩되지 않은 상태이다.Therefore, in this case, the fork 142 is first lowered to the top (h1) of the lift pin (LP) of the first electrostatic chuck (ESC1), thereby lifting the first substrate (S1) among the three substrates (S1, S2, and S3). It is loaded by placing it on the top of the pin (LP), and at this time, the remaining two boards (S2, S3) are still loaded on the top (h2, h3) of the lift pin (LP) of the second and third electrostatic chucks (ESC2, ESC3). It is not done.

이어서, 상기한 상태로 두 번째 정전척(ESC2) 상에 두 번째 기판(S2)을 로딩하기 이전에 포크(142)를 우측으로 1mm 이동하는 티칭을 먼저 실시한 후에 상기 포크(142)가 두 번째 정천척(ESC2)의 리프트핀(LP) 상단(h2)까지 하강함으로써 두 번째 기판(S2)이 두 번째 정전척(ESC2)의 리프트핀(LP) 상단(h2)에 로딩된다.Subsequently, before loading the second substrate (S2) on the second electrostatic chuck (ESC2) in the above-mentioned state, teaching is first performed to move the fork 142 to the right by 1 mm, and then the fork 142 moves to the second static chuck (ESC2). By descending to the top (h2) of the lift pin (LP) of the chuck (ESC2), the second substrate (S2) is loaded on the top (h2) of the lift pin (LP) of the second electrostatic chuck (ESC2).

계속해서, 이 때 포크(142)의 좌측 핸드(143)에는 세 번째 기판(S3)만이 남아 있는 상태인데, 상술한 바와 같이 앞서 두 번째 기판(S2)에서 우측으로 1mm 티칭을 수행했기 때문에 이번에는 포크(142)가 원위치로 복귀하기 위해서 반대로 좌측으로 1mm만큼 티칭을 실시한 후 상기 포크(142)가 세 번째 정전척(ESC3)의 리프트핀(LP) 상단(h3)까지 하강함으로써 마지막 세 번째 기판(S3)이 리프트핀(LP)의 상단(h3)에 올려져 최종 로딩된다.Continuing, at this time, only the third board (S3) remains in the left hand (143) of the fork (142). As described above, 1 mm teaching was previously performed from the second board (S2) to the right, so this time, In order for the fork 142 to return to its original position, teaching is performed to the left by 1 mm, and then the fork 142 descends to the top (h3) of the lift pin (LP) of the third electrostatic chuck (ESC3), thereby removing the third and final substrate ( S3) is placed on the top (h3) of the lift pin (LP) for final loading.

이로써, 3장의 기판(S1, S2, S3)이 정전척(ESC1, ESC2, ESC3) 상에 모두 티칭 및 로딩이 완료된 후, 이 상태에서 포크(142)가 그대로 개폐 밸브(131)를 통해 후퇴하여 빠져나옴으로써 기판(S1, S2, S3)의 로딩 과정이 완료된다.Accordingly, after teaching and loading of all three substrates (S1, S2, S3) on the electrostatic chuck (ESC1, ESC2, ESC3) is completed, in this state, the fork (142) retracts through the opening/closing valve (131). By exiting, the loading process of the substrates S1, S2, and S3 is completed.

역으로, 상기 공정 챔버(130)에서 기판(S1, S2, S3)의 처리가 완료된 후 기판의 언로딩 및 로드록 챔버(120)로 이송하는 과정은 상술한 로딩 과정의 역순에 의해 실시하면 된다.Conversely, after the processing of the substrates S1, S2, and S3 is completed in the process chamber 130, the process of unloading the substrate and transferring it to the load lock chamber 120 can be performed in the reverse order of the loading process described above. .

아울러 본 발명은 단지 앞서 기술된 일 실시예에 의해서만 한정된 것은 아니며, 장치의 세부 구성이나 개수 및 배치 구조를 변경할 때에도 동일한 효과를 창출할 수 있는 것이므로 당해 기술분야에서 통상의 지식을 가진 자라면 본 발명의 기술적 사상의 범주 내에서 다양한 구성의 부가 및 삭제, 변형이 가능한 것임을 명시하는 바이다.In addition, the present invention is not limited to just one embodiment described above, and the same effect can be created even when changing the detailed configuration, number, and arrangement structure of the device, so those skilled in the art will understand the present invention. It is stated that addition, deletion, and modification of various configurations are possible within the scope of the technical idea.

100 : (본 발명의) 반도체 기판 처리장치 110 : EFEM
120 : 로드록 챔버(L/L chamber) 121 : 모터
122 : 로테이션 척 123 : 고정핀
130 : 공정 챔버(P/M chamber) 131 : 개패 밸브
140 : 기판 이송유닛 141 : 아암(Arm)
142 : 포크(Fork) 143 : 핸드(Hand)
ESC : 정전척 LP : 리프트핀
S : 기판
100: Semiconductor substrate processing device (of the present invention) 110: EFEM
120: Load lock chamber (L/L chamber) 121: Motor
122: rotation chuck 123: fixing pin
130: Process chamber (P/M chamber) 131: Open/close valve
140: Substrate transfer unit 141: Arm
142: Fork 143: Hand
ESC: Electrostatic chuck LP: Lift pin
S: substrate

Claims (5)

복수의 기판을 수납하는 EFEM;
상기 EFEM으로부터 처리할 기판을 공급받거나 처리된 기판을 다시 EFEM으로 전달하며, 상기 EFEM으로부터 공급받거나 전달될 기판이 평면상에서 삼각형 배치를 이루도록 3장이 이격된 상태로 고정핀 상에 올려져 대기하는 로드록 챔버;
상기 로드록 챔버를 포함하여 방사형으로 연결 배치되어 진공 영역을 형성하며, 내부에는 3장의 기판이 평면상에서 삼각형 배치를 이루면서 로딩 또는 언로딩될 수 있도록 3세트의 정전척 및 리프트핀이 구비되는 공정 챔버; 및
상기 로드록 챔버와 공정 챔버 사이의 진공 영역에 구비된 상태로 로드록 챔버로부터 기판을 공정 챔버 내부로 로딩하거나 공정 챔버에서 처리가 끝난 기판을 다시 로드록 챔버로 언로딩하며, 로드록 챔버에 대기 중인 3장의 기판을 한번에 떠서 공정 챔버로 로딩하거나 처리가 끝난 3장의 기판을 한번에 다시 로드록 챔버로 언로딩하기 위해 3갈래로 분기된 포크와 더불어 상기 포크의 끝단에는 상기 3장의 기판이 각각 올려질 수 있도록 핸드가 구비되는 기판 이송유닛;을 포함하고,
상기 기판 이송유닛의 포크는 가운데 갈래의 길이가 긴 ‘ ’ 형상을 갖는 것을 특징으로 하는,
기판 교체시간이 단축된 반도체 기판 처리장치.
EFEM storing a plurality of substrates;
A load lock that receives substrates to be processed from the EFEM or transfers the processed substrates back to the EFEM, and waits for three substrates to be supplied or delivered from the EFEM by being placed on a fixing pin and spaced apart to form a triangular arrangement on a plane. chamber;
A process chamber that includes the load lock chamber and is radially connected to form a vacuum area, and is equipped with three sets of electrostatic chucks and lift pins so that three substrates can be loaded or unloaded in a triangular arrangement on a plane. ; and
Provided in the vacuum area between the load lock chamber and the process chamber, a substrate is loaded from the load lock chamber into the process chamber, or a substrate that has been processed in the process chamber is unloaded back into the load lock chamber and left to wait in the load lock chamber. In order to load three substrates at once into the process chamber or unload three processed substrates back into the load lock chamber at once, there is a fork branched into three branches, and each of the three substrates is placed at the end of the fork. It includes a substrate transfer unit provided with a hand to allow
The fork of the substrate transfer unit has a long middle prong. 'Characterized by having a shape,
Semiconductor substrate processing device with reduced substrate replacement time.
삭제delete 제 1 항에 있어서,
상기 포크의 3갈래 사이에는 보강바가 더 연결된 ‘ ’ 형상을 갖는 것을 특징으로 하는,
기판 교체시간이 단축된 반도체 기판 처리장치.
According to claim 1,
A reinforcing bar is further connected between the three prongs of the fork. 'Characterized by having a shape,
Semiconductor substrate processing device with reduced substrate replacement time.
제 1 항에 있어서,
상기 로드록 챔버의 내부에는 상방을 향해 설치된 모터의 회전축을 중심으로 평면상에서 3갈래로 분기된 형상의 로테이션 척이 결합되고, 상기 로테이션 척이 120도만큼 로테이션하면서 EFEM으로부터 로테이션 척의 각 끝단에 구비된 고정핀에 3장의 기판이 차례로 올려져 공급되거나 고정핀에 올려진 3장의 기판이 EFEM으로 차례로 취출되는,
기판 교체시간이 단축된 반도체 기판 처리장치.
According to claim 1,
Inside the load lock chamber, a rotation chuck of a three-pronged shape is coupled on a plane centered on the rotation axis of a motor installed upward, and the rotation chuck rotates by 120 degrees and is provided at each end of the rotation chuck from the EFEM. Three boards are placed sequentially on a fixing pin and supplied, or three boards placed on a fixing pin are sequentially taken out by the EFEM.
Semiconductor substrate processing device with reduced substrate replacement time.
제 1 항에 있어서,
상기 공정 챔버 내부에 구비된 3세트의 리프트핀은 기판의 로딩을 위해 정전척 상면으로부터 최대로 상승한 끝단의 돌출 높이가 세트마다 각각 다른 것을 특징으로 하는,
기판 교체시간이 단축된 반도체 기판 처리장치.
According to claim 1,
The three sets of lift pins provided inside the process chamber are characterized in that the protrusion height of the end that rises maximum from the upper surface of the electrostatic chuck is different for each set for loading the substrate.
Semiconductor substrate processing device with reduced substrate replacement time.
KR1020210124068A 2021-09-16 2021-09-16 Semiconductor substrate processing equipment with reduced substrate replacement time KR102585551B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020210124068A KR102585551B1 (en) 2021-09-16 2021-09-16 Semiconductor substrate processing equipment with reduced substrate replacement time
PCT/KR2022/012908 WO2023043088A1 (en) 2021-09-16 2022-08-30 Semiconductor substrate processing device having reduced substrate replacement time

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020210124068A KR102585551B1 (en) 2021-09-16 2021-09-16 Semiconductor substrate processing equipment with reduced substrate replacement time

Publications (2)

Publication Number Publication Date
KR20230040662A KR20230040662A (en) 2023-03-23
KR102585551B1 true KR102585551B1 (en) 2023-10-06

Family

ID=85603110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210124068A KR102585551B1 (en) 2021-09-16 2021-09-16 Semiconductor substrate processing equipment with reduced substrate replacement time

Country Status (2)

Country Link
KR (1) KR102585551B1 (en)
WO (1) WO2023043088A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100912432B1 (en) 2007-12-05 2009-08-14 주식회사 나온테크 Apparatus for wafer handling and method thereof
JP5611747B2 (en) * 2010-09-30 2014-10-22 ラピスセミコンダクタ株式会社 Substrate transfer arm and substrate transfer device
KR101338857B1 (en) 2011-01-31 2013-12-16 주식회사 나온테크 Substrate transport apparutus having four substrate support
JP5609744B2 (en) * 2011-03-31 2014-10-22 東京エレクトロン株式会社 Substrate delivery apparatus, substrate delivery method, and substrate processing apparatus
JP6972852B2 (en) * 2017-05-23 2021-11-24 東京エレクトロン株式会社 Vacuum transfer module and substrate processing equipment
JP7183635B2 (en) * 2018-08-31 2022-12-06 東京エレクトロン株式会社 SUBSTRATE TRANSFER MECHANISM, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE TRANSFER METHOD
US20210146554A1 (en) * 2019-11-15 2021-05-20 Applied Materials, Inc. Multi-finger robot apparatus, electronic device manufacturing apparatus, and methods adapted to transport multiple substrates in electronic device manufacturing

Also Published As

Publication number Publication date
WO2023043088A1 (en) 2023-03-23
KR20230040662A (en) 2023-03-23

Similar Documents

Publication Publication Date Title
CN106449471B (en) Substrate processing apparatus
US9305818B2 (en) Substrate processing apparatus
US6485248B1 (en) Multiple wafer lift apparatus and associated method
JP5490639B2 (en) Substrate processing apparatus and substrate transfer method
US5505577A (en) Transfer apparatus
KR100818044B1 (en) Substrate pedestal and substrate transfer equipment and substrate processing system and method using the same
JPWO2017038811A1 (en) Substrate transfer robot and substrate processing system
KR102163605B1 (en) Substrate processing apparatus
JP2011071293A (en) Process module, substrate processing apparatus, and method of transferring substrate
KR20140089517A (en) Load port and efem
JP5905504B2 (en) Apparatus for loading and unloading semiconductor wafers
US20220134575A1 (en) Carriage robot and tower lift including the same
JP6122256B2 (en) Processing system and processing method
US20080251019A1 (en) System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates
US20090024244A1 (en) High throughput semiconductor wafer processing
JP5926694B2 (en) Substrate relay device, substrate relay method, substrate processing apparatus
KR102585551B1 (en) Semiconductor substrate processing equipment with reduced substrate replacement time
US20060285944A1 (en) FOUP loading load lock
KR100901977B1 (en) Handler, Method of Manufacturing Semiconductor using the same, and Method of Transferring Test-tray
US9214369B2 (en) Dynamic pitch substrate lift
KR101212514B1 (en) Apparatus for processing substrate and method for transfering substrate
KR20100135626A (en) Substrate transfering apparatus and substrate processing system having the same
KR101383248B1 (en) High speed substrate processing system
KR100763260B1 (en) Waper transfer device
KR102076166B1 (en) Cassette loadlock apparatus having aligner

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right