KR102555413B1 - Light Emitting Display Device and Manufacturing Method for the Same - Google Patents

Abstract

The present invention relates to a light emitting display device and a method for manufacturing the same, wherein a resistance induction pattern is selectively formed on an upper surface of a bank so that a hole injection layer having an interface therewith has an area with increased resistance between sub-pixels, and adjacent sub-pixels leakage current can be prevented.

Description

Light emitting display device and manufacturing method thereof {Light Emitting Display Device and Manufacturing Method for the Same}

The present invention relates to a display device, and relates to a light emitting display device in which leakage current between adjacent sub-pixels is prevented by a common layer and a manufacturing method thereof.

Recently, as we entered the full-fledged information age, the display field that visually expresses electrical information signals has developed rapidly. Display Device) has been developed and is rapidly replacing the existing cathode ray tube (CRT).

Specific examples of such a flat panel display include a liquid crystal display apparatus (LCD), a quantum dot display apparatus (QD), a field emission display apparatus (FED), and an organic light emitting display. devices (Organic Light Emitting Diode: OLED); and the like.

Among them, an organic light emitting display device is being considered as a competitive application for miniaturization of the device and vivid color display without requiring a separate light source.

Such an organic light emitting display device includes an organic light emitting device independently driven for each sub-pixel, and each organic light emitting device includes a plurality of organic layers between an anode and a cathode and between the anode and the cathode.

In addition, the plurality of organic layers include a hole injection layer, a hole transport layer, an organic light emitting layer, and an electron transport layer in order from the anode. Among them, the organic light-emitting layer substantially combines holes and electrons to form excitons, and functions to emit light as its energy falls to the ground state, and other layers function to transport holes or electrons to the organic light-emitting layer or to help them.

Also, in the organic light emitting display device, subpixels are divided into red, green, and blue subpixels for color display, and divided into each subpixel to form an organic light emitting layer of the color of each corresponding subpixel. In general, a deposition method using a shadow mask is used for the organic light emitting layer.

However, when the shadow mask is applied to a large-area display device, sagging occurs due to the weight of the mask, which causes a yield drop when used multiple times. are formed in common.

However, due to the common layer common to the sub-pixels, current flows to the side through the common layer that is planarly continuous, resulting in side leakage current. Examples of the common layer include a hole injection layer, a hole transport layer, and an electron transport layer.

In an organic light emitting display device having organic layers of a common layer regardless of sub-pixels, a phenomenon in which an adjacent red sub-pixel is turned on when a blue light of a low gray level is turned on. This is a phenomenon in which not only the vertical electric field between the anode and cathode of the blue sub-pixel that is turned on, but also the adjacent sub-pixel is turned on due to the current leaking to the side through the common layer.

Such a side leakage current is mainly generated in, for example, a low grayscale expression, and when a current flows through organic layers common to a side leakage current flowing horizontally in a blue sub-pixel, an off-state adjacent red sub-pixel is turned on. because it works similarly to

This is because the driving voltage required for red lighting is relatively lower than the driving voltage required for blue lighting, and thus a lighting effect similar to that of blue is obtained even with a weak leakage current.

For example, there is a problem in that desired color display is not normally performed because color mixing occurs in low gradation representation due to the lighting phenomenon of other colors due to side leakage current.

The present invention has been made to solve the above problems, and relates to a light emitting display device preventing leakage current between adjacent sub-pixels by a common layer and a manufacturing method thereof.

In the light emitting display device of the present invention, after forming a bank, a resistance induction pattern is selectively formed on the upper surface so that the hole injection layer having an interface therewith has an area with increased resistance between sub-pixels, thereby preventing leakage current. there is.

A light emitting display device according to an embodiment of the present invention includes a substrate having a plurality of sub-pixels, a bank that divides adjacent sub-pixels and exposes a light emitting part of each sub-pixel, and a first electrode provided for each sub-pixel. and a hole injection layer including a first compound having a vinyl group as an end group over the bank and the first electrode over the plurality of sub-pixels, and located between the upper surface of the bank and the hole injection layer, , a resistance induction pattern including a second compound crosslinked with the vinyl group of the first compound, and a plurality of organic layers and a second electrode on the hole injection layer.

In the light emitting part of each sub-pixel in the hole injection layer, a plurality of first compounds may be included, and the first compounds may remain unbonded to each other.

In addition, the first compound includes an aromatic amine, and may have two or more sigma bonds between the aromatic amine and the vinyl group, each having no conjugation.

Meanwhile, only on the upper surface of the bank, the second compound in the resistance induction pattern and the first compound in the hole injection layer may be cross-linked. Through this, it is possible to induce a higher interfacial resistance of the hole injection layer than that of the light emitting portion at a portion having an interface with the resistance inducing pattern.

A photoinitiator in a bonded or unbonded state with the second compound may be further included in the resistance induction pattern.

A lower surface of the hole injection layer may contact the first electrode in the light emitting unit, and may contact the resistance induction pattern on an upper surface of the bank.

An interface where the resistance induction pattern meets the lower surface of the hole injection layer may have surface irregularities.

The resistance inducing pattern may have a molecular wall cross-linked along an interface where the hole injection layer meets a lower surface.

The resistance induction pattern may be positioned within a width of the bank and may be spaced apart from an edge portion of the light emitting portion.

The first compound may be an aromatic amine including the vinyl group at an end group.

The plurality of organic layers may include a color light emitting layer provided in the light emitting part of the sub-pixel, and a first common layer and a second common layer provided under and above the color light emitting layer over the sub-pixels.

Here, the color light emitting layer may include a plurality of color light emitting layers of different colors in neighboring sub-pixels. In this case, the color light emitting layers of different colors may have spaced portions on the upper surface of the bank.

Alternatively, the plurality of organic layers may include two or more stacks provided over the sub-pixels and separated by a charge generation layer, and the plurality of stacks may include overlapping color emission layers and at least one common layer. can

In addition, a method of manufacturing a light emitting display device of the present invention for achieving the same object includes preparing a substrate having a plurality of sub-pixels, providing a first electrode for each sub-pixel, and the adjacent sub-pixels. and providing a bank for exposing the light emitting part of each sub-pixel, applying a primary compound having a cross-linking group and a photoinitiator to the upper surface of the bank, and hole injection across the sub-pixels sequentially depositing a layer and a hole transport layer, irradiating light onto an upper portion of the hole transport layer, and forming a resistance induction pattern on an upper surface of the bank along an interface between the primary compound and the hole injection layer, and the plurality of sub It may include providing a plurality of organic layers and a second electrode across the pixels.

After forming the resistance induction pattern, the hole injection material maintains the vinyl group in an unbonded state in the light emitting part of each sub-pixel and reacts with the light irradiation on the upper surface of the bank to form the primary compound can react with cross-linking.

Applying the primary compound having a cross-linking group and the photoinitiator to the upper surface of the bank may include selectively applying the primary compound and the photoinitiator in a solvent to the upper surface of the bank and volatilizing the solvent. steps may be included.

In addition, after volatilizing the solvent, plasma pretreatment of the substrate may be included.

In the step of forming the resistance induction pattern, when the light is irradiated, cross-linking occurs between the hole injection material in the hole injection layer and the primary compound to form a molecular wall along an interface between the primary compound and the hole injection layer. can do.

After the light irradiation, an interface between the resistance induction pattern and the hole injection layer may have an irregular surface.

The light emitting display device and the manufacturing method of the present invention have the following effects.

First, in a light emitting device having a common layer in each sub-pixel, the effect of side leakage current can be prevented by forming a resistance induction pattern at the boundary of each sub-pixel before forming the common layer.

Second, in the resistance induction pattern, the first compound included in the common layer directly in contact with the resistance induction pattern and the second compound included in the resistance induction pattern are cross-linked along the interface to form a molecular wall by light irradiation, thereby forming a sub-layer. Resistance can be increased at the pixel boundary. Through this, it is possible to block current flowing horizontally between adjacent sub-pixels.

Third, for the resistance induction pattern formed in the previous step of the organic material deposition process, after the first organic material deposition process, selective light irradiation is performed on the boundary of the sub-pixel, resulting in physical contact resistance of the interface between the resistance induction pattern and the first contacting organic material layer. Side leakage current can be more effectively prevented by increasing a resistance difference between the light emitting part and a region other than the light emitting part.

Fourth, leakage current between adjacent sub-pixels is blocked through a resistance induction pattern to prevent leakage of long-wavelength light when light emission of a short wavelength of a low gradation is prevented, and color purity can be secured even at a low gradation.

Fifth, the resistance induction pattern limits the chemical reaction between the compound in the resistance induction pattern and the hole injection layer material to a local area through selective patterning of the resistance induction pattern, thereby preventing the leakage current preventing structure from affecting the light emitting part. there is.

1A is a diagram illustrating a light emitting display device according to a first embodiment of the present invention;
Figure 1b is a plan view of Figure 1a
Figure 2a is a chemical structural formula showing a first compound included in the hole injection layer of Figure 1
Figure 2b is a chemical structural formula showing a vinyl group of the first compound of Figure 2a
3 is a chemical structural formula showing a first compound included in a hole injection layer according to a comparative example
4a to 4c are chemical structural formulas showing examples of second compounds included in the resistance induction pattern of FIGS. 1a and 1b
5 is a view showing a chemical reaction occurring at the interface between the resistance induction pattern of FIGS. 1A and 1B and the hole injection layer;
6 is a plan view showing a light emitting display device according to the present invention;
7A and 7B are plan and cross-sectional views of one pixel of FIG. 6 according to a second embodiment of the present invention;
8 is a cross-sectional view of a light emitting display device according to a third embodiment of the present invention.
9A to 9E are process cross-sectional views illustrating a manufacturing method of the light emitting display device according to the present invention.
10a and 10b are schematic diagrams of the arrangement of compounds at the interface between the resistance induction pattern and the hole injection layer after steps 9c and 9e
11 is a graph showing light emission intensity by wavelength of a light emitting display device without a resistance induction pattern and a light emitting display device having a resistance induction pattern;

Like reference numbers throughout the specification indicate substantially the same elements. In the following description, if it is determined that a detailed description of a technique or configuration related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, the component names used in the following description are selected in consideration of the ease of writing the specification, and may be different from the part names of the actual product.

Since the shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining various embodiments of the present invention are exemplary, the present invention is not limited to those shown in the drawings. Like reference numerals designate like elements throughout this specification. In addition, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification is used, other parts may be added unless 'only' is used. In the case where a component is expressed in the singular, the case including the plural is included unless otherwise explicitly stated.

In interpreting the components included in various embodiments of the present invention, even if there is no separate explicit description, it is interpreted as including an error range.

In describing various embodiments of the present invention, in the case of describing the positional relationship, for example, 'on ~', '~ on top', '~ on the bottom', '~ next to', etc. When the positional relationship of parts is described, one or more other parts may be located between two parts unless 'immediately' or 'directly' is used.

In describing various embodiments of the present invention, in the case of explaining the temporal relationship, for example, 'after', 'after', 'after', 'before', etc. When is described, it may also include non-continuous cases unless 'immediately' or 'directly' is used.

In describing various embodiments of the present invention, 'first ~', 'second ~', etc. may be used to describe various components, but these terms are only used to distinguish between identical and similar components. am. Therefore, components modified with 'first to' in this specification may be the same as components modified with 'second to' within the technical spirit of the present invention, unless otherwise noted.

Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, technically various interlocking and driving are possible, and each of the various embodiments can be implemented independently of each other or together in an association relationship. may be

1A and 1B are cross-sectional and plan views illustrating a light emitting display device according to an exemplary embodiment of the present invention.

As shown in FIGS. 1A and 1B , the light emitting display device 1000 of the present invention distinguishes an array substrate 100 having a plurality of sub-pixels and the adjacent sub-pixels, and emits light emitting units EM1 and EM1 of each sub-pixel. A bank 120 exposing EM2), a first electrode 112 provided for each sub-pixel, and a terminal group over the bank and the first electrode across the plurality of sub-pixels A hole injection layer 131 including a first compound (A) having a vinyl group, located between the upper surface of the bank 120 and the hole injection layer 131, and a resistance induction pattern 130 including a second compound (B) cross-linked with the vinyl group and inducing interface resistance of the hole injection layer to be higher than that of the light emitting part.

The array substrate 100 includes, for example, a plurality of pixels (see P in FIG. 6) in a matrix form in an active area, and each pixel may have a plurality of sub-pixels SP1 and SP2 expressing different colors. there is. Sub-pixels included in each pixel may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel. The cross-sectional view shown in FIG. 1A is for regions I to I' of FIG. 1B, and the illustrated example shows only sub-pixels adjacent to the resistance induction pattern 130, so only two sub-pixels SP1 and SP2 are shown. It is not limited thereto, and the number of sub-pixels included in each pixel is not limited to a specific number, and may further include sub-pixels of other colors such as white in addition to the three colors of red, green, and blue. It may be changed to a combination of 3 to 7 colors of colors.

In addition, the sub-pixels included in each pixel may have the same size, or may have a larger sub-pixel of a specific color according to luminance or color characteristics required for each pixel, if necessary.

The sub-pixels SP1 and SP2 include light emitting parts EM1 and EM2 and non-emitting parts BK surrounding the light emitting parts EM1 and EM2. For example, the bank 120 may be provided in the non-light emitting portion, and the light emitting portions EM1 and EM2 of each sub-pixel may be defined in the open area. Depending on the case, when the bank 120 has an inclination, the side of the bank 120 can also be used as a light emitting area. The non-light emitting portion BK may be smaller than the width.

Meanwhile, the array substrate 100 may include a plurality of thin film transistors 200 in an array form on the substrate 111 .

For the substrate 111, for example, a glass substrate, a plastic substrate, or a metal substrate may be used, and a transparent material or an opaque material may be selectively used as needed. In addition, it may have a desired shape of deformation in the form of flexible, rollable, foldable, or bendable by thinning the thickness. The light emitting display device 1000 of the present invention can be applied to either a bottom emission method or a top emission method. In the case of the bottom emission type, the substrate 111 is preferably made of a transparent material.

Meanwhile, the thin film transistor 200 is connected to the light emitting element OLED provided in each of the sub-pixels SP1 and SP2, and may be provided in plural as well as singly arranged in each sub-pixel.

In addition, as shown in FIG. 1B , adjacent sub-pixels have a bank 120 at a boundary, and each sub-pixel has light emitting units EM1 and EM2 in an inner region of the bank 120 .

As shown in FIG. 1A , the thin film transistor 200 may be included on the substrate 111 for selective light emission for each sub-pixel. As illustrated, the thin film transistor 200 may be located in the non-emission area BK. However, it is not limited thereto, and if the first electrode 112 of the light emitting element OLED is a reflective electrode, the thin film transistor 200 may also be included in the light emitting units EM1 and EM2. When the first electrode 112 is a reflective electrode, the second electrode 150 may use a transparent electrode or a transflective electrode.

The thin film transistor 200 has a gate electrode 102 provided in a predetermined region on a substrate 111, and a semiconductor layer overlapping the gate electrode 102 with a gate insulating film 106 interposed therebetween. 134, and a source electrode 166 and a drain electrode 168 connected to both sides of the semiconductor layer 134.

Here, an interlayer insulating film 114 is formed between the semiconductor layer 134 and the source electrode 116 and the drain electrode 168, and the interlayer insulating film 114 is formed between the semiconductor layer 134 and the source electrode. A contact hole is provided at the connection portion of 116 and the drain electrode 168 so that the semiconductor layer 134 between different layers, the source electrode 166, and the drain electrode 168 can be connected.

The gate insulating layer 106, the interlayer insulating layer 114, and the first passivation layer 116 may be formed of an inorganic layer, for example, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

In addition, the gate electrode 102, the source electrode 166, and the drain electrode 168 are molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel in each layer. (Ni), neodymium (Nd), and copper (Cu), or may be formed of a single layer or multiple layers made of any one of these alloys.

In addition, the second passivation film 118 is made of acrylic resin, epoxy resin, phenolic resin, or polyamide to flatten the step due to the thin film transistor 200. It can be formed with an organic film such as polyamide resin or polyimide resin.

The illustrated example of the thin film transistor 200 is a form according to an example, and the gate electrode may be located on the upper side of the semiconductor layer, or the gate electrode may be located on the same layer as the source and drain electrodes. In addition, the semiconductor layer may be changed to an oxide semiconductor, amorphous silicon, polysilicon, or the like according to its components, or may be formed by including a plurality of layers of different types of semiconductors. Various modifications of the thin film transistor 200 are possible.

In addition, a first protective film 116 of an inorganic film component and a second protective film 118 of an organic film component may be further provided to cover the thin film transistor 200 .

The first and second passivation layers 116 and 118 may have a contact hole at an upper portion of the drain electrode 168 to be connected to the first electrode 112 of the light emitting device OLED.

In the light emitting display device of the present invention, the light emitting element OLED provided in each sub-pixel includes a first electrode 112 and a second electrode 150 opposite to the first electrode 112, and the first electrode 112 and the second electrode ( 150) including a plurality of organic layers (131, 132, 141/142, 145) provided between them. The plurality of organic layers 131, 132, 141/142, and 145 may be, in order from the bottom, a hole injection layer 131, a hole transport layer 132, color light emitting layers 141 and 142, and an electron transport layer 145. Each organic layer may be formed as a single layer or a plurality of layers.

For example, the light emitting element OLED may be an organic light emitting element or, in some cases, a quantum dot light emitting element when a quantum dot light emitting layer is used for the light emitting layer. Alternatively, when an inorganic light emitting layer other than the quantum dot light emitting layer is used for the light emitting layer, it may be replaced with an inorganic light emitting element.

At least one of the plurality of organic layers included in the light emitting device OLED may be a common layer overlapping the sub-pixels of the array substrate 100 . The example shown in FIG. 1A shows an example in which the hole injection layer 131, the hole transport layer 132, and the electron transport layer 145 are provided in the form of a common layer. In addition, the light emitting layers 141 and 142 located between the hole transport layer 132 and the electron transport layer 145 are divided into regions corresponding to the light emitting portions EM1 and EM2 of each sub-pixel, as shown in FIG. 1A. can be formed That is, the light emitting layers 141 and 142 may be selectively formed in a specific region using a fine metal mask that limits a separate opening region during formation.

The lower surface of the hole injection layer 131 may directly contact the first electrode 112 in the light emitting parts EM1 and EM2, and directly contact the resistance induction pattern 130 on the upper surface of the bank 120. there is.

An interface where the resistance inducing pattern 130 meets the lower surface of the hole injection layer 131 may have surface irregularities due to a cross-linking reaction between different types of compounds, and through this, interface resistance may be further increased due to physical surface roughness. can

Meanwhile, as shown in FIG. 1B , the resistance induction pattern 130 is positioned within the width of the bank 120 and may be spaced apart from the edge portions of the light emitting parts EM1 and EM2. In some cases, when there are a plurality of color pixels in the array substrate 100, they may be disposed only on the upper surface of the bank 120 in the non-light emitting area BK around the light emitting area of the blue sub-pixel having a large low grayscale leakage current. Even in this case, the horizontal leakage current flowing to the adjacent green, red, or other color sub-pixels is reduced due to the increase in interface resistance between the blue sub-pixel and the hole injection layer 131 formed by the resistance induction pattern 130. It can be prevented.

In the light emitting display device 1000 of the present invention, when the plurality of organic layers 131, 132, and 145 are common layers, the side leakage current induced in the horizontal direction is transferred to the resistance induction pattern 130 provided in the non-light emitting portion BK. ), horizontal leakage current between adjacent sub-pixels is prevented by relatively increasing the horizontal resistance of the common layer in the non-light emitting portion.

In particular, in the light emitting display device 1000 of the present invention, the hole injection layer 131 of the resistance induction pattern 130 is formed by adjusting the components of the hole injection layer 131 formed after the formation of the resistance induction pattern 130. It is characterized by forming a molecular wall that increases resistance at the interface.

Here, the resistance induction pattern 130 has an interface between the lower surface of the hole injection layer 131, and the second compound (B) constituting the resistance induction pattern 130 is the hole injection layer 131 ) and a chemical reaction with the first compound (A) included in (see FIG. 2a) to increase the contact resistance of the interface.

In detail, the functioning principle of the resistance induction pattern 130 of the present invention will be examined with reference to components constituting the hole injection layer 131 and the resistance induction pattern 130 and chemical reactions applied thereto.

FIG. 2a is a chemical structural formula showing a first compound included in the hole injection layer of FIG. 1, and FIG. 2b is a chemical structural formula showing a vinyl group of the first compound of FIG. 2a. And, Figure 3 is a chemical structural formula showing the first compound included in the hole injection layer according to the comparative example. 4A to 4C are chemical structural formulas showing examples of second compounds included in the resistance induction pattern of FIGS. 1A and 1B. 5 is a diagram illustrating a chemical reaction occurring at an interface between the resistance induction pattern of FIGS. 1A and 1B and the hole injection layer.

The first compound included as a main component in the hole injection layer 131 of the present invention prevents electrons escaping from the light emitting layer 141 or 142 from passing over to the first electrode 112 or being stagnant in the hole transport layer 132. In addition, it has a low LUMO energy level characteristic to prevent excitons escaping from the light emitting layer 141 or 142 from passing over to the first electrode 112 or being trapped in the hole transport layer 132. As a component having energy characteristics, for example, as shown in FIG. 2A, an aromatic amine is included.

In addition, the first compound (A) used in the hole injection layer 131 of the present invention also includes a vinyl group at the end group, as shown in FIG. 2A, and between the aromatic amine and the vinyl group Two or more sigma bonds are provided, each without conjugation. In some cases, aromatic amines may be replaced with other groups as long as they have electron blocking or exciton blocking characteristics, low LUMO energy levels and high triplet energy characteristics.

Here, two or more sigma (δ) bonding provided between the aromatic amine and the vinyl group in the first compound (A) have a strong bonding force between molecules, so that general light Alternatively, since the bond is maintained without being denatured even when heat is applied, the low LUMO energy level and high triplet energy characteristics of the aromatic amine located inside the primary sigma bond are maintained.

A vinyl group (vinyl) may be represented by a chemical formula of -CH=CH ₂ , and may have a secondary sigma bond separated from the aromatic amine at a site where hydrogen is omitted in a symmetrical structure, as shown in FIG. 2b.

The first compound (A) included in the hole injection layer 131 of the present invention is included in plurality in the hole injection layer in the form shown in FIG. 2A, and the first compound (A) is deposited on the array substrate 100 If post-irradiation is not performed, each of the first compounds (A) is maintained without forming a bond with each other. In this case, the hole injection layer 131 is in a state in which a plurality of first compounds (A) are deposited in the light emitting unit (EM1 and EM2 in FIG. They are not bonded and are dispersed apart.

In some cases, the hole injection layer 131 includes the first compound (A) as a main component (host), but may further include other compounds having different hole injection characteristics in an amount of 1/2 of the main component. there is. For example, the compound shown in FIG. 3 may be further included. Even if the aromatic amine compound is included as shown in FIG. 3 , the amount is smaller than that of the first compound (A), so that when the upper portion of the resistance induction pattern 130 is irradiated with light, the second compound (B) and hole injection of the resistance induction pattern 130 are included. It is possible to continuously provide cross-linking of the layer 131 with the first compound (A).

In addition, as shown in FIG. 5 , when light is irradiated to the region where the resistance induction pattern 130 is formed, vinyl groups, which were terminal groups of the first compounds in the hole injection layer 131, and the second compound in the resistance induction pattern 130 are formed. Crosslinking is formed through chemical reaction, and a long ring-shaped molecular wall is formed along the interface between the resistance inducing pattern 130 and the first hole injection layer 131, and the resistance of the portion where the molecular wall is formed is Increased. At this time, at the interface with the resistance induction pattern 130, the sigma bonds bonded to the inside of the vinyl group of the first compound are continuous even if the vinyl group at the terminal group is deformed in crosslinking, so that the resistance induction pattern ( 130) and the hole injection layer 131, it is difficult for electrons to move to other sites in successive sigma bonds in the interfacial molecular wall, so that a current flowing horizontally between adjacent sub-pixels can be prevented.

Meanwhile, as shown in FIG. 3 , the hole injection layer used in Comparative Example may contain only aromatic amine. The compound shown in FIG. 3 and the first compound of FIG. 2a may have the same low LUMO energy level characteristics and high triplet energy level characteristics.

The resistance induction pattern 130 may include a second compound (B) capable of cross-linking, as shown in FIGS. 4A to 4C, and a photoinitiator (C) at a ratio of 10% or less to the second compound. can include more.

As shown in FIGS. 4a to 4c, the second compound (B) may include one or more double bonds at the end group side. In addition to those shown in FIGS. 4a to 4c, the second compound (B) includes one or more double bonds or multiple bonds at the end group, and its activity is promoted by light irradiation to cross-link with the vinyl group of the first compound (A). If there is a compound, it can be replaced with another compound. The second compound (B) is also referred to as a cross linker in that cross-linking is promoted by light irradiation or the like.

The second compound (B) and the photoinitiator (C) are contained in a solvent and provided only to the upper surface area of the bank 120 . After volatilizing the solvent, the hole injection layer 131 and the hole transport layer 132 are continuously deposited on the resistance induction pattern 130 in the same chamber, and then, as shown in FIG. 5, light irradiation or heating is performed. , Radicals are generated in the photoinitiator (C) to promote a bonding reaction, so that the second compound (B) and the first compound (A) in the resistance induction pattern 130 may undergo a bonding reaction at the interface.

At this time, as shown in FIG. 5, the chemical reaction between the first compound (A) and the second compound (B) is carried out through light irradiation, and the vinyl group located at the end of the first compound is irradiated with a resistance induction pattern ( 130) cross-linked with the second compound (FIGS. 4a to 4c) and extends along the interface between the surface of the resistance induction pattern 130 and the lower surface of the hole injection layer 130 (molecular) induce the formation Therefore, the physical path at the interface between the resistance induction pattern 130 and the hole injection layer 131 is lengthened, so the contact length of the interface is increased, and the light emitting portions EM1 and EM2 maintaining flatness on the lower surface of the hole injection layer 131 ), the resistance increases at the region where the resistance induction pattern 130 is located.

Crosslinking is promoted by chemical bonding between the second compound (B) of the resistance induction pattern 130 and the first compound (A) of the hole injection layer 131, and the resistance induction pattern 130 and the hole injection layer The interface between (131) may have more roughness than when the hole injection layer 131 is initially deposited, and thus an increase in interface resistance may be secured even by physical surface roughness.

Therefore, in the light emitting device included in each sub-pixel, the influence of side leakage current can be prevented by forming the resistance induction pattern 130 at the boundary of each sub-pixel before forming the common layer.

In addition, chemically, the resistance induction pattern 130 is formed by light irradiation with the first compound (A) included in the hole injection layer 131, which is a common layer directly in contact with the resistance induction pattern 130, and the resistance induction pattern ( The second compound (B) included in 130) cross-links along the interface where they meet each other to form a molecular wall, thereby increasing resistance at the sub-pixel boundary. Through this, it is possible to block current flowing horizontally between adjacent sub-pixels.

In addition, with respect to the resistance induction pattern 130 formed in the previous step of the organic material deposition process, after performing the primary organic material deposition process, selective light irradiation is performed on the boundary of the sub-pixel, and the organic material common layer first contacting the resistance induction pattern 130 Side leakage current can be more effectively prevented by increasing the physical contact resistance of the interface between the phosphorus hole injection layers 131 to generate a resistance difference between the light emitting part and a region other than the light emitting part.

The first compound (A) included in the hole injection layer 131 is not limited to that shown in FIG. 2A, and any compound containing a vinyl group with two sigma bonds interposed therebetween as a terminal group is shown in FIG. 2A. It can also be changed to a compound of other materials.

Here, the first compound (A) is one in which a vinyl group is introduced into an end group with two sigma bonds interposed between which conjugation from an aromatic amine is impossible without a separate stimulation, and upon cross-linking with the second compound (B) In the cross-linked configuration of FIG. 5, the second compounds (B1, B2, ...) are bonded to the vinyl group of the other second compounds (B2, B1, ...) or the first compound (A) to obtain a long bond form. In this cross-linking, the second compound (B1, B2, ...) becomes the core of the bond, and its terminal group becomes a chain to bind to the vinyl group of the other second compound (B1, B2, ...) or the first compound (A). do. At this time, the photoinitiator (C) may directly bind to the vinyl group of the second compound (B1, B2, ...) or the first compound (A) by generating radicals by light irradiation within the bonding structure. In the coupling reaction between the first and second compounds, the sigma bond of the binding site is repeated in a number greater than the number of two sigma bonds of the first compound (A) by transformation of the vinyl group according to a radical reaction with light irradiation. can

When the coupling reaction is completed, the continuous sigma bonds that were continuous inside the vinyl group of the first compound (A) in the bonding structure are maintained and included in the long cross-linked chain (molecular wall), so that the continuous sigma bonds are formed. It is repeated with irregularity in the molecular wall, restricts the movement of electrons, and causes the resistance between the resistance induction pattern 130 and the hole injection layer 131 to increase.

6 is a plan view illustrating a light emitting display device according to an embodiment of the present invention. 7A and 7B are plan and cross-sectional views of one pixel of FIG. 6 according to the second embodiment of the present invention.

As shown in FIG. 6 , the light emitting display device 1000 of the present invention may include a plurality of pixels P in a matrix form in the active area AA where display is performed. A non-display area functions as a non-display area NA.

Here, in the light emitting display device 1000 of the present invention, common layers such as the hole injection layer 131 are formed to cover at least the entire active area AA. In addition, the resistance induction pattern 130 is located on a non-emission portion that divides a plurality of sub-pixels provided in the pixel P, that is, on the upper surface of the bank 120.

In the light emitting display device according to the second exemplary embodiment of the present invention, as shown in FIGS. 7A and 7B , each pixel P includes a blue light emitting part BE, a green light emitting part GE, and a red light emitting part RE. , represents a shape having a non-emitting portion BK in the remaining area. As shown in FIG. 1A , a resistance induction pattern 130 is provided in an inner region of the non-emitting portion BK. The shape shown in FIG. 7A shows a bar having gradually smaller sizes in the order of a blue light emitting part (BE), a green light emitting part (GE), and a red light emitting part (RE). This is because the efficiency of currently known blue light emitting materials is relatively lower than that of green and red light emitting materials, so the blue light emitting portion BE is relatively large to compensate for this. The reason why the green light emitting part GE is larger than the red light emitting part RE is that the effect of green light emission is the greatest in the expression of white as a display device, and the luminance efficiency compared to the current density of the green light emitting part is the highest, so that the area is relatively This is to secure high white efficiency by making it larger than the red light emitting portion RE.

Meanwhile, the sizes of the blue, green, and red light emitting units BE, GE, and RE may be determined differently in consideration of luminance characteristics and environments of a device to be implemented.

As shown in FIG. 7B , the light emitting display device according to the second embodiment of the present invention, compared to the first embodiment described above, has a hole transport auxiliary layer between the hole transport layer 132 and each color light emitting layer 141 , 142 , and 143 . (R'HTL, G'HTL) and an electron blocking layer 135.

In the light emitting display device according to the second embodiment, in the hole transport auxiliary layers R'HTL and G'HTL, regions in which light emission is optimally generated with different wavelengths in the color light emitting layers 141, 142, and 143 are located at the first electrode ( 112) and the second electrode 150 are different in vertical height, so that the color light-emitting layers 141, 142, and 143 are located at the location where the optimal light-emitting area for each wavelength is located to compensate for this. The relatively short-wavelength blue light emitting part (BE) does not include a hole transport auxiliary layer (G'HTL) in the green light emitting part (BE) corresponding to a medium wavelength and the red light emitting part (RE) having a relatively short wavelength. , R'HTL) is provided, and the thickness of the hole transport auxiliary layer may be thicker as the wavelength is longer. The structure shown in FIG. 7B is to apply hole transport auxiliary layers (G'HTL, R'HTL) when each color light emitting layer 141, 142, 143 has a similar thickness, and the thickness of the color light emitting layer itself is different for each wavelength of light emitting. By doing so, the hole transport auxiliary layer can be omitted, and the vertical height of the light emitting region of each color light emitting layer can be adjusted. The light emitting display device of the present invention is characterized in that it has a resistance induction pattern and a hole injection layer that reacts thereto by light irradiation, and can be applied regardless of whether a hole transport auxiliary layer is used or not.

In addition, the electron blocking layer 135 may function to prevent excitons or electrons from passing to the hole transport layer 132 from the color light emitting layers 141 , 142 , and 143 . For this purpose, the electron blocking layer 135 may be selected from a hole transporting material having a higher LUMO level than that of the hole transporting layer 132 .

On the other hand, the capping layer 160 provided on the upper side of the second electrode 150 of FIG. 7B protects the surface of the second electrode 150 of each light emitting element and extracts light from the second electrode 150. function. It is formed of a material having a refractive index in the range of 1.6 to 2.6 as a transparent organic material or a transparent inorganic material, or may be arranged with different refractive indices in an organic/inorganic laminated configuration.

The above-described capping layer 160 is not limited to the second embodiment and is applicable to other embodiments as well.

Meanwhile, in the configuration of the light emitting display device according to the second exemplary embodiment of the present invention, the hole injection layer 131 is formed with the resistance induction pattern 130 as shown in FIGS. 1A and 1B in the non-light emitting portion BK between adjacent sub-pixels. Including the former, it may be further included to induce a large resistance between the interfaces of each other. In FIG. 7B, since the area of the non-light emitting portion BK between adjacent sub-pixels is limited, the bank is omitted in terms of configuration, but the resistance induction pattern 130 is applied to each light emitting portion RE, GE and BE) may be formed on the upper surface of the bank in the non-light emitting portion (BK).

8 is a cross-sectional view illustrating a light emitting display device according to a third exemplary embodiment of the present invention.

In contrast to the single stack of light emitting devices described above in the first and second embodiments, the light emitting display device according to the third embodiment of the present invention according to FIG. 8 includes a plurality of stacks including the first and second electrodes 112 and It has a structure provided with the charge generating layer (CGL) interposed between the second electrodes 150 .

Each stack is separated by a charge generating layer (CGL), and each stack has at least one light emitting layer (EML1/EML2).

The charge generating layer (CGL) is formed on the n-type charge generating layer (n-CGL) positioned adjacent to the lower stack between different stacks and the n-type charge generating layer to generate p-type charges positioned adjacent to the upper stack. layer (p-CGL). The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generation layer may include an organic common layer doped with an alkali metal such as Li, Na, K, or Cs or an alkaline earth metal such as Mg, Sr, Ba, or Ra. The p-type charge generation layer may be formed by doping an organic material having hole transport capability with a dopant.

Each of the light emitting layers EML1/EML2 may have common layers EML1/EML3 and EML2/EML4 on the lower and upper portions. In some cases, one of the common layers may be omitted, or at least one of the common layers may be provided in multiple layers.

In addition, such a plurality of stacks may further include not only two stacks but also additional charge generation layers (not shown), and may further include one or more next stacks on the upper side.

In the plurality of stacks, not only the common layers CML1 to CML4 and the charge generation layer CGL, but also the light emitting layers EML1 and EML2 are different light emitting parts EM1 , EM2 and EM3 of the array substrate 100 and light emitting parts It is provided in the shape of a common layer across sub-pixels without distinguishing the areas of the non-emitting portion (BK) between (EM1, EM2, and EM3), and the entire stack implements white, and the emission of light from the top and bottom of the light emitting element A color filter may be further provided on the formed side to express colors within each sub-pixel.

Even when the light emitting layers EML1 and EML2 are formed regardless of areas, the horizontal leakage current can be prevented if the resistance induction pattern 130 of the present invention is provided below the hole injection layer 131 of the non-light emitting portion BK.

The light emitting layers EML1 and EML2 may be of different colors, and when the light emitting element implements white light, one is a blue light emitting layer and the other is a yellow-green light emitting layer or a stacked structure of a red light emitting layer and a green light emitting layer is provided in each stack. can do. In some cases, a stack having at least one color light emitting layer among them may be further provided.

In addition, in the case of having a plurality of stacks, as described above, a plurality of stacks having the same light emitting layer for each red, green, and blue sub-pixel are used to improve color purity and luminance efficiency of each color without using light emitting layers of different colors. It is also possible to use it by layering.

The first electrode 112 is a transparent conductive material (TCO, Transparent Conductive Material) such as ITO or IZO, a laminated structure of aluminum and titanium (Ti/Al/Ti), or a laminated structure of aluminum and ITO (ITO/Al/ITO ), APC alloy, and a laminated structure of APC alloy and ITO (ITO/APC/ITO). An APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

And, the second electrode 150 is a transparent conductive material (TCO, Transparent Conductive Material) such as ITO or IZO capable of transmitting light, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver. It may be formed of a semi-transmissive conductive material such as an alloy of (Ag). A capping layer 160 may be formed on the second electrode 150 . If the thin film transistor 200 is formed in the array substrate 100, in the case of a bottom emission method in which light is emitted in a downward direction, the second electrode 150 may be formed as an opaque electrode.

Hereinafter, a method of manufacturing a light emitting display device according to the present invention will be described.

9A to 9E are process cross-sectional views illustrating a manufacturing method of the light emitting display device according to the present invention. Also, FIGS. 10A and 10B are schematic diagrams of an arrangement of compounds at an interface between a resistance induction pattern and a hole injection layer after steps of FIGS. 9C and 9E.

The manufacturing method of the light emitting display device of the present invention is performed in the following order.

As shown in FIGS. 1B and 9A , an array substrate 100 having a plurality of sub-pixels SP1 and SP2 is prepared.

Subsequently, a first electrode 112 is provided for each of the sub-pixels SP1 and SP2. The first electrode 112 is a transparent conductive material (TCO, Transparent Conductive Material) such as ITO or IZO, a laminated structure of aluminum and titanium (Ti/Al/Ti), or a laminated structure of aluminum and ITO (ITO/Al/ITO ), APC alloy, and a laminated structure of APC alloy and ITO (ITO/APC/ITO). An APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu). The first electrode 112 may be determined according to a work function and a light emitting direction, and may be a single layer or multiple layers.

Subsequently, the bank 120 divides the sub-pixels, covers the edge of the first electrode 112, and exposes the light emitting parts EM1 and EM2 by leaving the non-emitting part BK of each sub-pixel. ) is provided.

The bank 120 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. there is.

Subsequently, a second compound (see FIG. 10A B) 1300 of any one of FIGS. 4A to 4C and a photoinitiator (C in FIG. 10A) are selectively applied to the upper surface of the bank 120 using a mask (not shown). Reference) is applied to the surface of the bank 120. The application of the solvent 1500 is performed before the organic layer deposition process, and may be performed using a mask forming the bank 120 or using a mask having an opening width smaller than that of the opening forming the bank 120. . The coating thickness of the solvent 1500 is about 5 Å to 30 Å, and it is preferable to form a thin thickness so as not to have an electrical effect in the vertical direction and related to the induction of horizontal resistance.

Subsequently, as shown in FIG. 9B, pre-baking is performed at 100° C. or lower, and the solution in the solvent 1500 is volatilized and removed on the bank 120 to obtain a second compound 1300 (B) and a photoinitiator (C). ) on the top surface of the bank 120. In this process, the remaining second compound 1300 (B) and the photoinitiator (C) may remain thinner than the thickness of the solvent 1500 in the step of FIG. 9A. Here, the photoinitiator (C) may be a component that reacts at a wavelength of about 400 nm or less in consideration of reactivity during subsequent light irradiation. In addition, the photoinitiator (C) is irradiated with light to form the resistance induction pattern 130 later on the hole transport layer 132, and the photoirradiation is applied with the second compound 1300 (B) and the photoinitiator (C). In consideration of the effect on the bank 120 located in the lower portion of the region, a photoinitiator having reactivity at a wavelength different from that of the photoinitiator that may be provided in the bank 120 is used. Through this, even if light irradiation is followed, outgassing of the bank due to light irradiation can be prevented. For example, if the photoinitiator (C) is a material that causes an initiation reaction at a light wavelength of 250 nm to 400 nm, the photoinitiator that may be included in the bank 120 may use short-wavelength ultraviolet light having a wavelength smaller than this by approximately 10 nm to 130 nm. . For example, the photoinitiator (C) may use PMP having reactivity to a light wavelength of 307 nm, and the photoinitiator included in the bank 120 may use EMK having a reactivity to a light wavelength of 205 nm. When the light irradiation is performed after the formation of the hole transport layer 132 for the crosslinking reaction between the second compound (B) and the first compound (A), the first and second compounds are applied to the bank 120 already formed below. This is to prevent the effect of light irradiation for the crosslinking reaction of (A, B).

Subsequently, the surface of the substrate 100 including the bank 120, the first electrode 112, and components thereon is pretreated with plasma to stabilize the surface of the first electrode 112 before the organic layer deposition revolution.

Subsequently, as shown in FIG. 9C , the hole injection layer 131 and the hole transport layer 132 are formed by different deposition materials over all the sub-pixels SP1 and SP2 provided on the array substrate 100 in the same chamber. form sequentially. As shown in FIG. 2A, the first compound (A) constituting the hole injection layer 131 includes a vinyl group at an end group, and conjugation is performed between the aromatic amine and the vinyl group, respectively. It may be a compound having a configuration with two or more sigma bonds not having. The aromatic amine connected to the vinyl group and having a continuous sigma bond interposed therebetween has a low LUMO energy level and high triplet energy characteristics having electron blocking or exciton blocking characteristics. It may be replaced with another group. there is. In addition, the hole injection layer 131 has a thickness equal to or thinner than the thickness of the solvent 1500 applied in the step of FIG. 9A so that chemical reactions between interfaces occur well during the subsequent light irradiation process.

The hole transport layer 132 has a thickness of about 100 Å to 1000 Å and is relatively thick compared to other common layers to the extent that it can affect the location of the light emitting region between the first and second electrodes 112 and 150 of the light emitting device. can be formed by In some cases, as shown in FIG. 7B, when the hole transport auxiliary layers (G'HTL, R'HTL) are provided, the light emitting area of the light emitting part of each light emitting part can be adjusted differently from each other by adjusting the thickness in the range of 100 Å to 700 Å. . The hole transport layer 132 includes a compound having a higher hole mobility than that of the hole injection layer 131, and the compound has a LUMO energy level and a HOMO energy level higher than those of the first compound (A), respectively.

As shown in FIG. 10A, immediately after forming the hole transport layer 132, the second compound 1300 (B) on the surface of the bank 120, the photoinitiator (C), and the first compound (A) in the hole injection layer 131 ) are interspersed and arranged without mutual reactivity at each interface.

Subsequently, as shown in FIG. 9D, when UV light is irradiated onto the hole transport layer 132, radicals are generated in the photoinitiator C and a chemical reaction is promoted, as shown in FIG. 10B, and the upper surface of the bank 120 The second compound (B) applied to the hole injection layer 131 and the first compound (A) including the vinyl group as an end group form a cross-linked bond with each other, and as shown in FIG. 9E, the hole injection layer 131 A resistance induction pattern 130 in a molecular wall state is formed along the lower surface of.

Here, the chemical bond at the interface between the resistance induction pattern 130 and the lower surface of the hole injection layer 131 uses the second compound (B) as a cross-linking agent in the resistance induction pattern 130 as a core, and the second compound In (B), the vinyl group of the first compound (A) or another second compound (B) or the terminal group is cross-linked to the terminal group. In some cases, the photoinitiator (C) also generates radicals to bond with the second compound (B) of the crosslinking agent. As described above, the lower surface of the cross-linked hole injection layer 131 and the resistance induction pattern 130 are formed by secondary or more continuous sigma bonding inside the first compound (A) in the bonding structure. and electrons are not moved due to the strong intermolecular bonding force in this portion, so that the area where the resistance induction pattern 130 is located has an effect of preventing a horizontal leakage current.

Subsequently, as shown in FIG. 1A , a plurality of organic layers 132 , 141 / 142 , and 145 and a second electrode 150 may be sequentially formed over the plurality of sub-pixels.

Hereinafter, intensity characteristics for each wavelength in the case of having the same light emitting device structure but not having a resistance induction pattern on the lower surface of the hole injection layer (Comparative Example) and the structure having a resistance induction pattern (the present invention) will be reviewed through experiments. .

11 is a graph showing light emission intensity for each wavelength of a light emitting display device without a resistance induction pattern and a light emitting display device having a resistance induction pattern.

In FIG. 11, 2100 represents a comparative example without a resistance induction pattern, 2200 is a first experimental example of the present invention, and the compound of FIG. 4B is used as a second compound as a cross-linking agent in the resistance induction pattern, and 2300 is the present invention. As a second experimental example, the compound of FIG. 4c was used as a cross-linking agent in the resistance induction pattern as the second compound.

In Comparative Example, the hole injection layer is composed of a compound containing only aromatic amine, as shown in FIG. The first compound in which two sigma bonds are consecutive is commonly used.

In addition, the first and second experimental examples of the present invention structurally have the resistance induction pattern 130 on the upper surface of the bank 120 as shown in FIG. 1A, and the first electrode 112 in the open area of the bank 120 is located, and has a hole injection layer 131, a hole transport layer 132, light emitting layers 141/142, an electron transport layer 145, and a second electrode 150 thereon.

Comparative Example is structurally different in that it does not have the resistance induction pattern 130 on the upper surface of the bank 120 in FIG. differ in one respect.

As shown in FIG. 11 , the light emitting device of Comparative Example exhibits a peak characteristic in the red wavelength region even when emitting blue low gradation, and it can be seen that red leakage occurs when emitting blue low gradation.

On the other hand, in the first and second experimental examples of the present invention, it was confirmed that the intensity in other visible light wavelength regions was maintained below the intensity in ultraviolet light when blue low-gradation light was emitted, preventing light leakage of other wavelengths. .

In the light emitting display device of the present invention, in the light emitting device having a common layer in each sub-pixel, the influence of side leakage current can be prevented by forming a resistance induction pattern at the boundary of each sub-pixel before forming the common layer. .

In addition, in the resistance induction pattern, a first compound included in a common layer directly in contact with the resistance induction pattern and a second compound included in the resistance induction pattern are cross-linked along an interface to form a molecular wall by light irradiation, thereby forming a sublayer. Resistance can be increased at the pixel boundary. Through this, it is possible to block current flowing horizontally between adjacent sub-pixels.

Then, with respect to the resistance induction pattern formed in the previous step of the organic material deposition process, after the first organic material deposition process, selective light irradiation is performed on the boundary of the sub-pixel to provide physical contact resistance at the interface between the resistance induction pattern and the first contacting organic material layer. Side leakage current can be more effectively prevented by increasing a resistance difference between the light emitting part and a region other than the light emitting part.

Meanwhile, leakage current between adjacent sub-pixels is blocked through a resistance induction pattern to prevent light leakage of long-wavelength light when light emission of a short wavelength of a low gradation is prevented, and color purity can be secured even at a low gradation.

Ultimately, in the light emitting display device of the present invention, the resistance induction pattern limits the chemical reaction between the compound in the resistance induction pattern and the hole injection layer material to a local area through selective patterning of the resistance induction pattern, so that the light emitting portion in the leakage current prevention structure can be prevented from affecting

On the other hand, the present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible within the scope without departing from the technical spirit of the present invention. It will be clear to those skilled in the art.

100: array substrate 111: substrate
102: gate electrode 106: gate insulating film
112: first electrode 114: interlayer insulating film
116: first protective film 118: second protective film
120: bank
130: resistance induction pattern 131: hole injection layer
132: hole transport layer 141 to 143: light emitting layer
145: electron transport layer 150: second electrode
200: thin film transistor 1300: second compound

Claims (20)

a substrate having a plurality of sub-pixels;
a bank that divides the adjacent sub-pixels and exposes a light emitting part of each sub-pixel;
a first electrode provided for each sub-pixel;
a hole injection layer including a first compound having a vinyl group as an end group over the plurality of sub-pixels and above the bank and the first electrode;
a resistance induction pattern positioned between the upper surface of the bank and the hole injection layer and including a second compound crosslinked with the vinyl group of the first compound; and
A light emitting display device including a plurality of organic layers and a second electrode on the hole injection layer. According to claim 1,
The light emitting display device of claim 1 , wherein a plurality of first compounds are included in the light emitting part of each sub-pixel in the hole injection layer, and the first compounds are maintained in an unbonded state. According to claim 1,
The first compound comprises an aromatic amine,
A light emitting display device having two or more sigma bonds without conjugation between the aromatic amine and the vinyl group, respectively. According to claim 1,
Only on the upper surface of the bank, the second compound in the resistance induction pattern and the first compound in the hole injection layer are cross-linked to reduce the interfacial resistance of the hole injection layer at a portion having an interface with the resistance induction pattern. A light emitting display device that induces greater than negative light. According to claim 1,
The light emitting display device further comprises a photoinitiator bonded to or uncoupled with the second compound in the resistance induction pattern. According to claim 1,
The lower surface of the hole injection layer is in contact with the first electrode in the light emitting part, and the upper surface of the bank is in contact with the resistance induction pattern. According to claim 6,
The light emitting display device of claim 1 , wherein an interface where the resistance induction pattern meets the lower surface of the hole injection layer has surface irregularities. According to claim 7,
A light emitting display device having molecular walls cross-linked along an interface where the resistance induction pattern meets a lower surface of the hole injection layer. According to claim 1,
The resistance induction pattern is located within a width of the bank,
A light emitting display device spaced apart from an edge of the light emitting part. According to claim 1,
wherein the plurality of organic layers includes a color light emitting layer provided in the light emitting part of the sub-pixel, and a first common layer and a second common layer provided under and above the color light emitting layer across the sub-pixels. According to claim 10,
The color light emitting layer is provided by dividing a plurality of color light emitting layers of different colors in neighboring sub-pixels. According to claim 11,
The light emitting display device of claim 1 , wherein the light emitting layers of different colors have spaced portions on an upper surface of the bank. According to claim 1,
The plurality of organic layers include two or more stacks provided over the sub-pixels and separated by a charge generation layer,
The plurality of stacks include overlapping color emission layers and at least one common layer. Preparing a substrate having a plurality of sub-pixels;
providing a first electrode for each sub-pixel;
dividing the adjacent sub-pixels and providing a bank exposing a light emitting part of each sub-pixel;
coating a primary compound having a cross-linking group and a photoinitiator on the upper surface of the bank;
sequentially depositing a hole injection layer and a hole transport layer over the sub-pixels;
irradiating an upper portion of the hole transport layer with light to form a resistance induction pattern on an upper surface of the bank along an interface between the primary compound and the hole injection layer; and
and providing a plurality of organic layers and a second electrode over the plurality of sub-pixels. According to claim 14,
The hole injection layer includes a plurality of silver first compounds,
The method of claim 1 , wherein the first compound has two or more sigma bonds without conjugation between an aromatic amine and a vinyl group, respectively. According to claim 15,
After forming the resistance induction pattern, the first compound
Maintaining the vinyl group in an unbonded state in the light emitting portion of each sub-pixel;
A method of manufacturing a light emitting display device in which an upper surface of the bank reacts with the light irradiation and undergoes a cross-linking reaction with the primary compound. According to claim 14,
The step of applying a primary compound having a crosslinking group and a photoinitiator to the upper surface of the bank,
selectively applying the primary compound and the photoinitiator in a solvent to the upper surface of the bank; and
A method of manufacturing a light emitting display device comprising volatilizing the solvent. According to claim 17,
and pre-treating the substrate with plasma after volatilizing the solvent. According to claim 15,
In the step of forming the resistance induction pattern,
When the light is irradiated, cross-linking occurs between the first compound and the primary compound in the hole injection layer to form a molecular wall along an interface between the primary compound and the hole injection layer. manufacturing method. According to claim 14,
A method of manufacturing a light emitting display device having an irregular surface at an interface between the resistance induction pattern and the hole injection layer after the light irradiation.

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