KR102526102B1 - Flexible display device and fabricating method thereof - Google Patents

Abstract

A flexible display device and a manufacturing method thereof are disclosed. A flexible display device according to an embodiment of the present invention includes a display panel including an image display area including a plurality of sub-pixels and displaying an image, and an image non-display area that is bent toward the rear surface of the image display area. Including. The image non-display area includes a pad portion configured with a plurality of link pads, and a bending area including a plurality of bending grooves along at least one peripheral line of the image display area so that the image non-display area is bent or folded. , The plurality of bending grooves are patterned through a mask for patterning the sub-pixels of the image display area, and since a plurality of etching surfaces having different slopes are formed in each bending groove, the bending groove process of the bending region can be simplified. .

Description

Flexible display device and manufacturing method thereof

The present invention relates to a flexible display device capable of simplifying a bending groove process of a bending area in which an image non-display area of a flexible display panel can be easily bent, and a manufacturing method thereof.

As the information society develops, the demand for display devices for displaying images is increasing in various forms, and recently, liquid crystal displays and organic light emitting diode displays have Several flat display devices are widely used.

In common, flat panel display devices essentially include a flat panel display panel for realizing an image. A flat panel display panel has a structure in which a pair of substrates having a light emitting material or a polarizing material interposed therebetween are bonded face to face.

In recent years, flexible substrates made of soft materials such as plastic are used as base substrates when manufacturing flat panel displays, and flexible display devices that can maintain display performance even when bent like paper have been developed. can also be implemented. Since such a flexible display device can be more widely applied than an inflexible conventional display device, research and development for commercialization of the flexible display device are continuing.

Flat panel display devices including flexible display devices include a projection display area that substantially displays an image, and link lines and pads for connection with various driving circuits or external circuits in the non-image display area, which is the area other than the display area. It is common to have a part or the like provided.

However, as the outer edge area of the display area, that is, the width of the bezel is wider, the image display area looks relatively reduced, and thus the product value of the display device according to aesthetics and utility is lowered.

Accordingly, in order to reduce the width of the bezel, research and development on reducing the width of the non-display area itself is being conducted. The GIP (Gate In Panel) method is also one of the proposed technologies for reducing the non-display area, and is a method in which a gate driving circuit for driving gate lines of an image display panel is embedded in one side of the image display area. Nevertheless, there is a limit to reducing the width of the non-display area due to an area allocated to various driving circuits disposed in the non-display area or pads for connecting to external circuits.

Conventionally, a method of minimizing the area of the image non-display area by bending the image non-display area of the flexible substrate has been suggested, but the bending portion and the peripheral portion of the substrate are damaged by the force applied to bend the image non-display area. problem occurred. Accordingly, in order to reduce the stress of the bending area, a plurality of bending grooves have been configured in the bending areas, but a problem in that the bending grooves cannot be easily configured because a plurality of patterning processes must be performed separately to configure the bending grooves. there was.

An object to be achieved by the present invention is to reduce the process cost and time of the flexible display panel by simplifying the bending groove process of the bending area so that the non-display area of the flexible display panel can be easily folded or bent. It relates to a flexible display device that can be used and a manufacturing method thereof.

In particular, in the process of patterning the pixels of the image display area, since a plurality of bending grooves can be formed in the non-image display area with the insulating layer patterning mask of the pixels, the number of patterning using the mask is reduced. Accordingly, it is an object of the present invention to provide a flexible display device and a manufacturing method thereof capable of forming a folding or bending structure of an image non-display area through a simpler and more streamlined process.

A flexible display device according to an embodiment of the present invention for achieving the object of the present invention includes an image display area for displaying an image having a plurality of sub-pixels, and an image non-display that is bent toward the rear surface of the image display area. It includes a display panel that includes an area. The image non-display area includes a pad portion configured with a plurality of link pads, and a bending area including a plurality of bending grooves along at least one peripheral line of the image display area so that the image non-display area is bent or folded. , A plurality of bending grooves are patterned through a mask for patterning sub-pixels in the image display area, so that a plurality of etching surfaces having different slopes are formed in each bending groove.

also. To achieve the object of the present invention, a method of manufacturing a flexible display device according to an embodiment of the present invention includes preparing an IS substrate, defining an image display area and an image non-display area on a base substrate, and in the image display area configuring a plurality of sub-pixels and configuring a bending area in the video non-display area so that the video non-display area can be bent in a rear direction of the image display area, and configuring the bending area includes configuring a plurality of bending grooves along at least one peripheral line of the image display region so that the image non-display region is bent or folded, and the plurality of bending grooves form a mask for patterning sub-pixels of the image display region. By being patterned through, a plurality of etching surfaces having different slopes are formed in each bending groove.

A flexible display device according to an embodiment of the present invention having various technical characteristics as described above and a manufacturing method thereof include bending of a bending area that allows an image non-display area of a flexible display panel to be easily folded or bent. By simplifying the home process, it is possible to reduce the process cost and time of the flexible display panel.

In addition, in the process of patterning and constructing the pixels of the image display area, a plurality of bending grooves can be formed in the image non-display area with the patterning mask of the insulating layer of the pixels. In this way, by reducing the number of times of patterning using a mask, a folding or bending structure of the image non-display area can be achieved with a simpler and more streamlined process.

In addition, a bezel width can be minimized by configuring a plurality of bending grooves so that the image non-display area of the flexible display panel can be folded or bent and the image non-display area is folded.

1 is a configuration diagram illustrating a flexible display device according to an exemplary embodiment of the present invention.
FIG. 2 is a configuration diagram illustrating an image non-display area and an image display area at one corner of the display panel shown in FIG. 1 .
FIG. 3 is a cross-sectional view illustrating a structure in which an image non-display area of the display panel shown in FIG. 1 is folded.
FIG. 4 is a plan view illustrating a structure of a sub-pixel shown in FIGS. 1 and 2 in detail.
5 is a cross-sectional view showing the structure of a driving TFT configured in a sub-pixel of an image display area, a link pad portion and a bending portion of an image non-display area.
6 to 9 are cross-sectional views sequentially illustrating a method of manufacturing a display panel of a flexible display device.

Terms or words used in this specification and claims should not be construed as being limited to ordinary or dictionary meanings, and the inventors may properly define the concept of terms in order to best describe their invention. Based on the principle that it can be, it should be interpreted as meaning and concept consistent with the technical spirit of the present invention.

In addition, the embodiments described in this specification and the configurations shown in the drawings are only one of the most preferred embodiments of the present invention, and do not represent all the technical ideas of the present invention, so they can be replaced at the time of this application. It should be understood that there may be many equivalents and variations.

Hereinafter, a flexible display device and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

As a flexible display device to which the main technology of the present invention is applied, an organic light emitting diode display, a quantum dot display, and the like can be applied. Hereinafter, an organic light emitting diode display will be described as an example.

1 is a configuration diagram illustrating a flexible display device according to an exemplary embodiment of the present invention.

The flexible display device shown in FIG. 1 includes an image display area DIA where a plurality of sub-pixels P are arranged to display an image, and an area around the image display area DIA in the rear direction of the image display area DIA. The display panel 10 including an image non-display area that is bent with a , the gate driver 40 that drives the gate lines GL arranged in the image display area DIA, and the image display area DIA. A data driver DL driving the arrayed data lines DL is included.

Gate and data lines GL and DL are alternately arranged in the image display area DIA of the display panel 10 . In addition, sub-pixels P are formed in pixel areas defined by crossing the gate and data lines GL and DL to display an image. Sub-pixels P displaying images by light emission of the organic light emitting diode may additionally include emission lines supplied with light emission control signals for controlling the light emission period of the organic light emitting diode.

Each of the sub-pixels P arranged in a matrix form by the gate and data lines GL and DL includes an organic light emitting diode and a diode driving circuit independently driving the organic light emitting diode. A high potential voltage (VDD), a low potential or ground voltage (GND), and a reference voltage are commonly supplied to each sub-pixel (P). The diode driving circuits supply a diode driving voltage corresponding to the analog data voltage from the connected data line DL to the organic light emitting diode, and charge the storage capacitor with the data voltage to maintain the light emitting state. Accordingly, the sub-pixels P may emit light in a preset color of any one of red light, green light, blue light, and white light. The form in which the sub-pixels P are arranged in the image display area DIA is not limited to a matrix form, and may be arranged in various forms such as a stripe form, a form in which pixels are shared, and a diamond form.

Bending areas PAs are formed around the image display area DIA adjacent to the image display area DIA of the display panel 10 to allow the image non-display area to be bent. It is preferable that the bending areas PAs are formed along the periphery of the image display area DIA at positions closest to the image display area DIA so that the size of the bezel is minimized due to bending of the image non-display area. A plurality of bending grooves are formed in the bending areas PA to facilitate bending and to minimize stress due to bending. When configuring the sub-pixel P of the image display area DIA, the bending groove is patterned together with the insulating layers of the sub-pixel P through a mask used for patterning the insulating layers of the sub-pixel P. do. The configuration and manufacturing characteristics of these bending grooves will be described in more detail later with reference to the accompanying drawings.

The data driver 30 converts digital image data into an analog data voltage using an external data control signal. Then, the data voltage is supplied to each data line DL in units of horizontal lines. The data driver 30 may be mounted on a separate printed circuit film 50 and formed between the image non-display area of the display panel 10 and the PCB. In addition, the data driver 30 may be directly mounted in the non-display area of the display panel 10 . The data driver 30 is mounted on a separate printed circuit film 50 and connected to the non-display area of the display panel 10, or directly mounted in the non-display area of the display panel 10. It is located in the rear direction of the image display area DIA according to the bending structure of .

The gate driver 40 may be configured by being integrated in the image non-display area of the display panel 10 in a GIP (Gate In Panel) method. Like the data driver 30, the gate driver 40 may be mounted on a separate printed circuit film and attached to the non-display area of the display panel 10. The gate driver 40 sequentially generates scan signals in response to a gate control signal from the outside and controls the pulse width of the scan signals according to a horizontal period. Also, the scan signals are sequentially supplied to the gate lines GL for each horizontal period.

The gate driver 40 is also integrated in the non-display area of the display panel 10 or mounted on a printed circuit film and attached to the non-display area of the display panel 10. It is located in the rear direction of the image display area DIA in a bent state.

FIG. 2 is a configuration diagram illustrating an image non-display area and an image display area at one corner of the display panel shown in FIG. 1 .

Referring to FIG. 2 , a plurality of link pads LK connected to gates and data drivers 40 and 30 are respectively connected to an image non-display area around an image display area DIA in which a plurality of sub-pixels P are arranged; A plurality of link lines electrically connecting the plurality of link pads LK to the gate and data lines GL and DL, respectively, and at least one side image non-display area in the rear direction of the image display area DIA. At least one bending area PA configured along at least one peripheral line of the image display area DIA to be bent or folded is included.

The plurality of link pads LK are arranged on one side and the other side of the outermost pad part LKA of the image non-display area to correspond to the positions of the gate and data driver parts 40 and 30, respectively. Specifically, among the plurality of link pads LK, the link pads LK for data voltage transmission that are electrically connected to the data driver 30 are outermost pads in one lateral direction of the image non-display area to which the data driver 30 is connected. (LKA), respectively.

The link lines of the link pads LK for data voltage transmission are connected in one direction to correspond to the link pads LK for data voltage transmission and the plurality of data lines DL, respectively, so that each link pad for data voltage transmission The data voltage from (LK) is transmitted to each data line (DL).

In addition, among the plurality of link pads LK, the link pads LK for transmitting scan signals electrically connected to the gate driver 40 are the outermost pad portion in the other side direction of the image non-display area in which the gate driver 40 is configured ( LKA) are arranged respectively.

In addition, the link lines of the link pads LK for transmitting the scan signal are connected in the other direction so as to correspond to the link pads LK for transmitting the scan signal and the plurality of gate lines GL, respectively, to link pads for transmitting the scan signal. Scan signals from LKs are sequentially transmitted to respective gate lines GL.

FIG. 3 is a cross-sectional view illustrating a structure in which an image non-display area of the display panel shown in FIG. 1 is folded.

Referring to FIGS. 3 and 4 , at least one bending area PA is formed on at least one side of the image display area DIA so that the image non-display area is bent or folded in the rear direction of the image display area DIA. It is configured along at least one peripheral line.

In at least one bending area PA, a plurality of bending grooves are formed in a direction perpendicular to the bending direction of the image non-display area so that the image non-display area can be bent in the rear direction of the image display area DIA.

Even if the base substrate of the display panel 10 is applied as a flexible substrate, when the image non-display area is bent by an external force, the bent area receives stress due to the bent shape change. In particular, as the outer surface of the area to be bent increases in stress, the bent outer surface and its periphery may be damaged in the process of bending the image non-display area. Accordingly, in order to prevent the bending area PA of the image non-display area, and the surface and periphery of the bending area PA from being damaged, a plurality of bending grooves are formed in the bending area PA.

The plurality of bending grooves are formed in parallel at predetermined intervals along one side of the image display area DIA in the same direction as the longitudinal direction of the bending area PA. The plurality of bending grooves may be configured to correspond to the thicknesses of a plurality of insulating layers and a protective film, such as a plurality of insulating layers and a protective film, excluding a buffer layer or an etch-stop layer formed on the base substrate of the display panel 10 . That is, the plurality of bending grooves are formed by patterning and etching a plurality of insulating layers and protective films except for a buffer layer or an etch stop layer on a substrate. The plurality of bending grooves may be configured to correspond to the thickness and depth of the plurality of insulating layers and the protective layer. The configuration of the plurality of bending grooves and the manufacturing method thereof will be described in more detail with reference to the accompanying drawings.

FIG. 5 is a plan view showing a structure of a sub-pixel shown in FIGS. 1 and 2 in detail.

Referring to FIG. 5 , each sub-pixel P of the present invention includes an organic light emitting diode (not shown), a driving TFT (Tr1), a switching TFT (Tr2), and a storage capacitor.

The switching TFT (Tr2) switches the data voltage path from the data line (DL) in response to the scan signal input through the gate line (GL). Specifically, the switching TFT (Tr2) is turned on by the scan signal input to the gate electrode through the gate line GL and passes the data voltage input to the source electrode through the data line DL to the drain electrode. , the data voltage is transmitted to the node to which the gate electrode of the driving TFT (Tr1) is connected.

The driving TFT (Tr1) is turned on to correspond to the size of the data voltage input to the gate electrode through the switching TFT (Tr2), and passes the current from the high potential voltage source (VDD) to the organic light emitting diode (OLED). . Accordingly, the amount of light emitted from the organic light emitting diode (OLED) is controlled according to the amount of current input through the driving TFT (Tr1).

The storage capacitor is electrically connected to the gate terminal of the driving TFT (Tr1) so that the voltage applied to the gate electrode of the driving TFT (Tr1) can be maintained during the turn-on period of the driving TFT (Tr1). The storage capacitor is formed between the gate terminal of the driving TFT (Tr1) and a high potential or low potential voltage (VDD) supply terminal. In addition to the storage capacitor C1, separate auxiliary capacitors may be further formed at the gate terminal of the driving TFT (Tr1). For example, a parasitic capacitor may be formed between the gate terminal of the driving TFT (Tr1) and the input terminal of the organic light emitting diode (OLED), and the gate terminal of the driving TFT (Tr1) and the drain to which the high potential voltage (VDD) is input. A storage capacitor may be further configured in a dual structure between terminals.

5 is a cross-sectional view showing the structure of a driving TFT configured in a sub-pixel of an image display area, a link pad portion and a bending portion of an image non-display area.

Referring to FIGS. 4 and 5 , a buffer layer 111 is deposited and configured on a substrate 110 . The buffer layer 111 may be an etch stop layer. The buffer layer 111 or the etch stop layer is deposited on the entire surface of the substrate 110 including the image display area DIA and the image non-display area.

The buffer layer 111 or the etch stop layer minimizes penetration of moisture or oxygen through the substrate 110 and flattens the top of the substrate 110 . For example, the buffer layer 111 may be formed of an insulating material such as SiNx or SiO2. An insulating material constituting the buffer layer 111 may be selected according to the type of the substrate 110 or the types of the switching TFT (Tr2) and the driving TFT (Tr1). However, the buffer layer 111 is not necessarily used in the organic light emitting diode display, and the buffer layer 111 may be omitted.

In each sub-pixel P of the image display area DIA, a switching TFT (Tr2) and a driving TFT (Tr1) are respectively formed in different areas on the entire surface of the buffer layer 111. The switching TFT (Tr2) includes a gate electrode 121, an active layer 122, a source electrode and a drain electrode 123. The driving TFT (Tr1) also includes a gate electrode 131, an active layer 132, a source electrode, and a drain electrode cc2, respectively.

The switching TFT (Tr2) can be an oxide semiconductor type TFT in which an active layer is composed of an oxide semiconductor. The switching TFT (Tr2) may have a bottom gate structure in which a gate electrode, an active layer made of an oxide semiconductor, and a source electrode and a drain electrode are sequentially stacked on a substrate surface.

On the other hand, the driving TFT (Tr1) may be a low temperature poly silicon (LTPS) type TFT in which an active layer is formed of low temperature polysilicon. The driving TFT (Tr1) includes a common electrode (CB) for configuring a dual storage capacitor on the substrate surface, an active layer 132 made of low-temperature polysilicon with the common electrode (CB) and the first insulating layer 112 interposed therebetween, It may have a bottom gate structure in which the gate electrode 131 formed on the active layer 132 with the first insulating layer 113 interposed therebetween, and the source electrode and the drain electrode cc2 are sequentially stacked. A capacitance electrode CM for forming a storage capacitor may be further formed in a configuration sharing the gate electrode 131 of the driving TFT (Tr1). The common electrode CB and the capacitance electrode CM may be connected to a high potential voltage VDD supply terminal.

In FIG. 5, the cross-sectional structure of the switching TFT (Tr2) is omitted. Also, in FIG. 4, the active layer 122 of the switching TFT (Tr2) is directly connected to the gate electrode 131 of the driving TFT (Tr1). If the source electrode of the switching TFT (Tr2) is used, the source electrode of the switching TFT (Tr2) is formed of the same material on the same layer as the drain electrode 1123 of the switching TFT (Tr2), and the switching TFT (Tr2) The source electrode of may be electrically connected to the gate electrode 131 of the driving TFT (Tr1) at an arbitrary position.

Referring to the cross-sectional view of FIG. 6 , the TFT (Tr1) of the sub-pixel P configured in the image display area (DIA), the link pad (CB) in the image non-display area, and the bending area (PA) in the image non-display area are formed. Looking at the structure in more detail, it is as follows.

As shown in FIG. 6 , the driving TFT (Tr1) of the sub-pixel (P) may have a coplanar structure. In this case, the driving TFT (Tr1) is formed from the substrate 110 to the common electrode (CB), active layer 132, the gate electrode 131, and the source and drain electrodes cc2 may be configured in a stacked structure with the first and second insulating layers 112 and 113 interposed therebetween.

For example, on the buffer layer 111 , first, a common electrode CB for forming a dual storage capacitor, a link line, and a link pad is patterned and configured. That is, when forming the common electrode CB for the dual storage capacitor configuration, a link line and a link pad are formed with the common electrode CB in the image non-display area.

A first insulating layer 112 is formed on the entire surface of the buffer layer 111 including the common electrode CB, the link line, and the link pad, and low-temperature polysilicon is patterned with the first insulating layer 112 therebetween to drive the TFT. It constitutes the active layer 132 of (Tr1). Thereafter, a second insulating layer 113 or a protective film is deposited on the entire surface of the active layer 132, the link line LK, and the link pad CB, and the active layer 113 or the protective film is interposed therebetween. A gate electrode 131 is patterned on the layer 132 to overlap the active layer 132 by a predetermined area.

A third insulating layer 114 is deposited on the entire surface of the substrate including the gate electrode 131, and the source and drain contact holes formed by patterning the second insulating layer 113 and the third insulating layer 114 pass through the source. and a drain electrode. Here, through a process of patterning the second insulating layer 113 and the third insulating layer 114, the second insulating layer 113 and the third insulating layer 114 of the bending area PA are etched first. In other words, by using a mask for patterning the second insulating layer 113 and the third insulating layer 114 of the image display area DIA, the second insulating layer 113 and the third insulating layer 113 of the bending area PA The layer 114 is patterned to form bending grooves, and each bending groove is primarily formed along with the primary etching surfaces ec1 in the bending area PA. Accordingly, the buffer layer 111 and the first insulating layer 112 are primarily present in each bending groove, and primary etching surfaces ec1 having a predetermined first inclination angle are present on both sides of each bending groove. do.

Thereafter, a capacitance electrode CM for forming a storage capacitor is further patterned on the third insulating layer 114 to share the gate electrode 131 of the driving TFT (Tr1). Accordingly, a fourth insulating layer 115 is additionally formed on the third insulating layer 114 including the capacitance electrode CM, and the fourth insulating layer 115 is patterned to use the capacitance electrode CM as a high potential voltage source ( A contact hole for connecting to VDD) is additionally configured. Here, the fourth insulating layer 115 of the bending area PA is additionally etched secondarily through a process of patterning the fourth insulating layer 115 of the image display area DIA. In other words, the bending groove is formed by patterning the fourth insulating layer 115 of the bending area PA using a mask for patterning the fourth insulating layer 115 of the image display area DIA, and the bending area ( Each of the bending grooves is secondarily formed in the PA) along with secondary etching surfaces ec2. That is, secondarily, the fourth insulating layer 115 is etched again in each bending groove so that only the buffer layer 111 and the first insulating layer 112 exist, and both sides of each bending groove have a predetermined second inclination angle. Secondary etching surfaces ec2 having a are additionally present.

Thereafter, a patterning process of the first insulating layer 112 is finally performed to remove the first insulating layer 112 respectively present in the bending grooves of the bending area PA. In this way, as the patterning process of the first insulating layer 112 is finally performed, the first insulating layer 112 in the bending area PA is further 3rdly etched, and thus the 3rd etched surface ec3 is formed. Each bending groove is configured together with the. That is, in the third order, the buffer layer 111 or the etch stop film is finally present in each bending groove, and tertiary etching surfaces ec3 having a predetermined third inclination angle are additionally present on both sides of each bending groove. do. An unpatterned insulating material of the first insulating layer 112 may remain in a preset pattern shape in the bending groove of the tertiary patterned bending area PA. The reason why the unpatterned insulating material of the first insulating layer 112 is left in the bending groove is that even if a conductive layer or conductive pattern is additionally formed in the process of constructing an organic light emitting diode or the like in the pixel region (P), the additionally formed conductive layer or This is to allow the conductive pattern to remain more durable by the remaining insulating material.

7 to 10 are revolving cross-sectional views sequentially illustrating a method of manufacturing a display panel of a flexible display device.

Specifically, FIGS. 7 to 10 are cross-sectional views illustrating processes of manufacturing a driving TFT of a sub-pixel, a link pad part of an image non-display area, and a bending part in order. 7 to 10, the TFT (Tr1) of the sub-pixel (P) formed in the image display area (DIA), the link pad (CB) in the image non-display area, and the bending area (PA) in the image non-display area Looking at the manufacturing method in more detail as follows.

Referring first to FIG. 7 , a common electrode CB for configuring a dual storage capacitor, a link line, and a link pad is formed by patterning on the anti-etching layer or the buffer layer 111 . During the common electrode CB patterning process, the link line and the link pad are simultaneously patterned using the common electrode CB in the non-image display area. Subsequently, a first insulating layer 112 is deposited on the entire surface of the buffer layer 111 including the common electrode CB, the link line, and the link pad. The first insulating layer 112 may be deposited and made of an insulating material such as SiO2.

After the first insulating layer 112 is formed, the active layer 132 of the driving TFT (Tr1) is formed by patterning low-temperature polysilicon with the first insulating layer 112 interposed therebetween. Thereafter, the second insulating layer 113 or a protective film is deposited on the entire surface of the active layer 132, the link line LK, and the link pad CB. The second insulating layer 113 may be made of SiO2 or may be made of SiNx or the like in addition to SiO2.

Accordingly, the gate electrode 131 is formed by patterning to overlap the active layer 132 by a predetermined area on the active layer 132 with the second insulating layer 113 or the protective film interposed therebetween.

A third insulating layer 114 is additionally deposited on the entire surface of the substrate including the gate electrode 131 using an insulating material such as SiNx, and the second insulating layer 113 and the third insulating layer 114 are used as one mask. Source and drain electrodes are formed through the patterned source and drain contact holes.

As shown in FIG. 7 , the second insulating layer 113 and the third insulating layer 114 of the bending area PA are patterned through a process of patterning the second insulating layer 113 and the third insulating layer 114 . ) is first etched. In other words, the second insulating layer 113 and the third insulating layer 113 and the third insulating layer of the bending area PA are patterned using a mask for patterning the second insulating layer 113 and the third insulating layer 114 of the image display area DIA. 114 is patterned to configure the bending grooves, and each bending groove is primarily formed along with the primary etching surfaces ec1 in the bending area PA. Accordingly, the buffer layer 111 and the first insulating layer 112 are primarily present in each bending groove, and primary etching surfaces ec1 having a predetermined first inclination angle are present on both sides of each bending groove. do.

Next, referring to FIG. 8 , a capacitance electrode CM for forming a storage capacitor is patterned and configured on the third insulating layer 114 to share the gate electrode 131 of the driving TFT (Tr1).

Then, on the third insulating layer 114 including the capacitance electrode CM, SiO2, SiNx, etc. are deposited to further configure the fourth insulating layer 115, and the fourth insulating layer 115 is patterned to form a capacitance electrode ( A contact hole for connecting CM) to the high potential voltage source (VDD) is additionally formed. Here, the fourth insulating layer 115 of the bending area PA is additionally etched secondarily through a process of patterning the fourth insulating layer 115 of the image display area DIA. In other words, the bending groove is formed by patterning the fourth insulating layer 115 of the bending area PA using a mask for patterning the fourth insulating layer 115 of the image display area DIA, and the bending area ( Each of the bending grooves is secondarily formed in the PA) along with secondary etching surfaces ec2. That is, secondarily, the fourth insulating layer 115 is etched again in each bending groove so that only the buffer layer 111 and the first insulating layer 112 exist, and both sides of each bending groove have a predetermined second inclination angle. Secondary etching surfaces ec2 having a are additionally present.

Then, as shown in FIGS. 9 and 10 , a first insulating layer 112 patterning process is finally performed to remove the first insulating layer 112 respectively present in the bending grooves of the bending area PA. .

As the first insulating layer 112 patterning process is finally performed, the first insulating layer 112 in the bending area PA is 3rdly etched as a mask for controlling the first insulating layer 112, thereby creating a third Each bending groove is formed together with the tertiary etching surfaces ec3. That is, in the third order, the buffer layer 111 or the etch stop film is finally present in each bending groove, and tertiary etching surfaces ec3 having a predetermined third inclination angle are additionally present on both sides of each bending groove. do. On the other hand, the unpatterned insulating material of the first insulating layer 112 may remain in the form of a preset pattern in the bending groove of the tertiary patterned bending area PA. The reason why the unpatterned insulating material of the first insulating layer 112 is left in the bending groove is that even if a conductive layer or conductive pattern is additionally formed in the process of constructing an organic light emitting diode or the like in the pixel region (P), the additionally formed conductive layer or This is to allow the conductive pattern to remain more durable by the remaining insulating material.

As described above, in the flexible display device and the manufacturing method thereof according to the exemplary embodiment of the present invention, the bending groove process of the bending area that enables the non-display area of the flexible display panel to be easily folded or bent By simplifying the process, the process cost and time of the flexible display panel can be reduced.

In addition, in the process of patterning and constructing the pixels of the image display area, a plurality of bending grooves can be formed in the image non-display area with the patterning mask of the insulating layer of the pixels. In this way, by reducing the number of times of patterning using a mask, a folding or bending structure of the image non-display area can be achieved with a simpler and more streamlined process.

In addition, a bezel width can be minimized by configuring a plurality of bending grooves so that the image non-display area of the flexible display panel can be folded or bent and the image non-display area is folded.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which the present invention belongs that various substitutions, modifications, and changes are possible without departing from the technical details of the present invention. It will be clear to those who have knowledge of Therefore, the scope of the present invention is indicated by the following claims, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts should be construed as being included in the scope of the present invention.

10: display panel
30: data driving unit
40: gate driver
P: sub pixel
GL1: gate line
DL1: data line
PA: bending area
DIA: video display area

Claims (12)

A display panel including an image display area including a plurality of sub-pixels to display an image, and an image non-display area that is bent toward a rear surface of the image display area;
The video non-display area is
a pad portion comprising a plurality of link pads; and
A bending area including a plurality of bending grooves along at least one peripheral line of the image display area so that the image non-display area is bent or folded;
The bending area may include a buffer layer on a base substrate; a first insulating layer over the buffer layer; a second insulating layer over the first insulating layer; a third insulating layer over the second insulating layer; A fourth insulating layer is formed on the third insulating layer,
The plurality of bending grooves are formed by etching the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer,
The first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer of each bending groove are formed with a plurality of etching surfaces each having a different slope,
flexible display device.
According to claim 1,
The plurality of bending grooves
A first mask for patterning a second insulating layer and a third insulating layer excluding the first insulating layer of the sub-pixel during the patterning process for configuring the sub-pixels of the image display area;
A secondary mask for patterning the fourth insulating layer of the sub-pixel, and
Consisting of being sequentially patterned through a tertiary mask for patterning the first insulating layer of the sub-pixel,
flexible display device.
According to claim 1,
The plurality of bending grooves
A primary etching surface formed by primary etching of the second insulating layer and the third insulating layer except for the first insulating layer in both directions of the buffer layer or the etch stop film deposited on the base substrate;
A secondary etching surface formed by secondary etching of the fourth insulating layer;
Each of the tertiary etched surfaces on which the first insulating layer is etched is configured,
flexible display device.
According to claim 3,
In the at least one bending area, a plurality of bending grooves are formed in a direction perpendicular to the bending direction of the video non-display area so that the video non-display area can be bent in the rear direction of the video display area.
flexible display device.
According to claim 3,
The plurality of bending grooves
In the same direction as the longitudinal direction of the bending area, it is configured in parallel at predetermined intervals along either side of the image display area,
The plurality of bending grooves are configured to correspond to the plurality of insulating layers and protective film thicknesses of the plurality of insulating layers and protective films excluding the buffer layer or the etch-stop layer formed on the base substrate of the display panel.
flexible display device.
According to claim 3,
On the bottom surface of the plurality of bending grooves
In the process of forming the third etching surface, the first insulating layer is patterned and the remaining insulating material exists in a preset pattern form,
flexible display device.
preparing a base substrate;
defining an image display area and an image non-display area on the base substrate;
configuring a plurality of sub-pixels in the video display area and configuring a bending area in the video non-display area so that the video non-display area can be bent in a rear direction of the video display area; ,
The step of configuring the bending area is
configuring a plurality of bending grooves along at least one peripheral line of the image display area so that the image non-display area is bent or folded;
The bending area may include a buffer layer on a base substrate; a first insulating layer over the buffer layer; a second insulating layer over the first insulating layer; a third insulating layer over the second insulating layer; A fourth insulating layer is formed on the third insulating layer,
The plurality of bending grooves are formed by etching the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer,
The first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer of each bending groove are formed with a plurality of etching surfaces each having a different slope,
Manufacturing method of flexible display device.
According to claim 7,
The plurality of bending groove configuration steps
In the patterning process for configuring the sub-pixels of the image display area, primary patterning is performed through a primary mask for patterning a second insulating layer and a third insulating layer excluding the first insulating layer of the sub-pixel,
Secondary patterning is performed through a secondary mask for patterning the fourth insulating layer of the sub-pixel,
Thirdly patterned through a third mask for patterning the first insulating layer of the sub-pixel,
Manufacturing method of flexible display device.
According to claim 7,
The plurality of bending groove configuration steps
depositing a buffer layer or an etch stop layer on the base substrate;
forming a primary etched surface by depositing first to third insulating layers and performing primary patterning on the second insulating layer and the third insulating layer except for the first insulating layer;
forming a secondary etching surface by depositing a fourth insulating layer and performing secondary patterning on the fourth insulating layer;
Forming a third etched surface by patterning the first insulating layer
Manufacturing method of flexible display device.
According to claim 9,
On the bottom surface of the plurality of bending grooves
In the process of forming the tertiary etching surface, the first insulating layer is patterned and the remaining insulating material exists in a preset pattern form,
Manufacturing method of flexible display device.
According to claim 7,
Configuring the at least one bending area
Forming a plurality of bending grooves in the at least one bending area in a direction perpendicular to the bending direction of the video non-display area so that the video non-display area can be bent in the rear direction of the video display area.
Manufacturing method of flexible display device.
According to claim 8,
The plurality of bending grooves
In the same direction as the longitudinal direction of the bending area, it is configured in parallel at predetermined intervals along either side of the image display area,
The plurality of bending grooves are configured to correspond to the plurality of insulating layers and protective film thicknesses in the plurality of insulating layers and protective films except for the buffer layer or the etch stop layer formed on the base substrate,
Manufacturing method of flexible display device.

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