KR102517466B1 - 스캐닝 빔 주입에 대한 빔 프로파일링 속도 개선 - Google Patents

스캐닝 빔 주입에 대한 빔 프로파일링 속도 개선 Download PDF

Info

Publication number
KR102517466B1
KR102517466B1 KR1020177015595A KR20177015595A KR102517466B1 KR 102517466 B1 KR102517466 B1 KR 102517466B1 KR 1020177015595 A KR1020177015595 A KR 1020177015595A KR 20177015595 A KR20177015595 A KR 20177015595A KR 102517466 B1 KR102517466 B1 KR 102517466B1
Authority
KR
South Korea
Prior art keywords
ion beam
scanning
frequency
ion
profile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177015595A
Other languages
English (en)
Korean (ko)
Other versions
KR20170098815A (ko
Inventor
앤디 레이
에드워드 씨. 아이즈너
Original Assignee
액셀리스 테크놀러지스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 액셀리스 테크놀러지스, 인크. filed Critical 액셀리스 테크놀러지스, 인크.
Publication of KR20170098815A publication Critical patent/KR20170098815A/ko
Application granted granted Critical
Publication of KR102517466B1 publication Critical patent/KR102517466B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020177015595A 2014-12-26 2015-12-28 스캐닝 빔 주입에 대한 빔 프로파일링 속도 개선 Active KR102517466B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462096963P 2014-12-26 2014-12-26
US62/096,963 2014-12-26
PCT/US2015/067722 WO2016106423A1 (en) 2014-12-26 2015-12-28 Beam profiling speed enhancement for scanned beam implanters

Publications (2)

Publication Number Publication Date
KR20170098815A KR20170098815A (ko) 2017-08-30
KR102517466B1 true KR102517466B1 (ko) 2023-03-31

Family

ID=55315701

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177015595A Active KR102517466B1 (ko) 2014-12-26 2015-12-28 스캐닝 빔 주입에 대한 빔 프로파일링 속도 개선

Country Status (6)

Country Link
US (1) US10483086B2 (https=)
JP (1) JP6779880B2 (https=)
KR (1) KR102517466B1 (https=)
CN (1) CN107210177B (https=)
TW (1) TWI686839B (https=)
WO (1) WO2016106423A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US11646175B2 (en) * 2019-02-15 2023-05-09 Axcelis Technologies, Inc. Method of mixing upstream and downstream current measurements for inference of the beam current at the bend of an optical element for realtime dose control
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001516151A (ja) * 1997-09-10 2001-09-25 オリオン イクウィプメント インコーポレイテッド 真空チャンバ内でワークピースを制御する方法及び装置
JP2004530265A (ja) 2001-03-23 2004-09-30 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入器における走査ビームの一様性の調節方法および装置
JP2010503964A (ja) * 2006-09-13 2010-02-04 アクセリス テクノロジーズ， インコーポレイテッド イオン注入装置におけるビーム角調整システムおよびその調整方法
JP2014022347A (ja) * 2012-07-24 2014-02-03 Sen Corp イオン注入方法およびイオン注入装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US7323700B1 (en) * 2001-04-02 2008-01-29 Applied Materials, Inc. Method and system for controlling beam scanning in an ion implantation device
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
US7064340B1 (en) * 2004-12-15 2006-06-20 Axcelis Technologies, Inc. Method and apparatus for ion beam profiling
US7358510B2 (en) * 2006-03-27 2008-04-15 Varian Semiconductor Equipment Associates, Inc. Ion implanter with variable scan frequency
US8421039B2 (en) * 2011-03-31 2013-04-16 Axcelis Technologies, Inc. Method and apparatus for improved uniformity control with dynamic beam shaping
US8581204B2 (en) * 2011-09-16 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for monitoring ion implantation
JP5767983B2 (ja) * 2012-01-27 2015-08-26 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001516151A (ja) * 1997-09-10 2001-09-25 オリオン イクウィプメント インコーポレイテッド 真空チャンバ内でワークピースを制御する方法及び装置
JP2004530265A (ja) 2001-03-23 2004-09-30 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入器における走査ビームの一様性の調節方法および装置
JP2010503964A (ja) * 2006-09-13 2010-02-04 アクセリス テクノロジーズ， インコーポレイテッド イオン注入装置におけるビーム角調整システムおよびその調整方法
JP2014022347A (ja) * 2012-07-24 2014-02-03 Sen Corp イオン注入方法およびイオン注入装置

Also Published As

Publication number Publication date
TW201630027A (zh) 2016-08-16
CN107210177A (zh) 2017-09-26
WO2016106423A1 (en) 2016-06-30
US20160189926A1 (en) 2016-06-30
JP2018506135A (ja) 2018-03-01
US10483086B2 (en) 2019-11-19
CN107210177B (zh) 2020-06-16
TWI686839B (zh) 2020-03-01
JP6779880B2 (ja) 2020-11-04
KR20170098815A (ko) 2017-08-30

Similar Documents

Publication Publication Date Title
US8692216B2 (en) Ion implantation apparatus and control method thereof
US8637838B2 (en) System and method for ion implantation with improved productivity and uniformity
KR102356512B1 (ko) 가로지르는 빔 강도 분포를 측정하기 위한 방법
US7550751B2 (en) Ion beam scanning control methods and systems for ion implantation uniformity
US9006692B2 (en) Apparatus and techniques for controlling ion implantation uniformity
TWI739915B (zh) 離子植入方法及離子植入裝置
KR102517466B1 (ko) 스캐닝 빔 주입에 대한 빔 프로파일링 속도 개선
US9905397B2 (en) Ion implantation apparatus and scanning waveform preparation method
JP2012513089A (ja) 走査型フィールド効果が軽減されたイオン注入
JP2018506135A5 (https=)
KR102517465B1 (ko) 하이브리드 스캐닝 이온 주입기의 생산성을 향상시키는 시스템 및 방법
KR102451551B1 (ko) 스캔식 빔 이온 주입기에서의 빔 이용을 향상시키기 위한 방법
KR101849387B1 (ko) 스캔빔 이온 주입장치에 있어서의 스루풋 증대
KR102920358B1 (ko) 이온 빔 발산 최소화를 위한 튜닝 장치

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4