KR102508916B1 - Organic Light Emitting Display Device and Manufacturing Method of the Same - Google Patents

Abstract

The present invention provides an organic light emitting display device capable of reducing color reproducibility deterioration due to color mixing by preventing a color loss phenomenon in which some sub-pixels adjacent to a light-emitting sub-pixel emit light or light is emitted in a bank insulating film region between sub-pixels, and a method for manufacturing the same. it's about An organic light emitting display device of the present invention includes a substrate including a plurality of sub-pixel areas, a first electrode formed in each sub-pixel area, and a bank hole exposing a portion of an upper surface of the first electrode, A bank insulating film positioned on one side of a first electrode, an organic light emitting layer covering the first electrode and the bank insulating film, and a second electrode covering an upper surface of the organic light emitting layer, wherein the second electrode overlaps the bank insulating film. It is characterized in that it includes an oxidized region.

Description

Organic light emitting display device and manufacturing method thereof {Organic Light Emitting Display Device and Manufacturing Method of the Same}

The present invention relates to an organic light emitting display device and a manufacturing method thereof. Specifically, the present invention relates to a bottom emission type organic light emitting display device capable of reducing a decrease in color gamut and preventing an increase in power consumption due to a parasitic current, and a manufacturing method thereof.

BACKGROUND OF THE INVENTION [0002] Video display devices, which implement various information on a screen, are a core technology in the information and communication era, and are developing toward a thinner, lighter, portable and high-performance direction. Accordingly, an organic light emitting display device or the like that displays an image by controlling the amount of light emitted from an organic light emitting layer as a flat panel display device capable of reducing the weight and volume, which are disadvantages of a cathode ray tube (CRT), is in the limelight.

In an organic light emitting display (OLED), pixels composed of sub-pixels of three colors (red, green, and blue) are basically arranged in a matrix form to display an image.

In particular, the organic light emitting display device is a self-emissive display device, and unlike a liquid crystal display (LCD), it does not require a separate light source and can be manufactured to be lightweight and thin. In addition, the organic light emitting diode display is advantageous in terms of power consumption due to low voltage driving and is also excellent in terms of color implementation, response speed, viewing angle, and contrast ratio (CR).

The organic light emitting display device has a method of forming and using an organic light emitting device that emits red (R), green (G), and blue (B) itself in each pixel area according to a method of expressing color, and an organic light emitting device that emits white light. A method of forming all light emitting elements in the pixel area and using a color filter is used. Among these methods, the method of forming and using an organic light emitting device emitting different colors for each pixel area has difficulties in terms of manufacturing process, while the method of using a white organic light emitting device and a color filter has high productivity and high resolution implementation. It has been widely studied because of its advantages.

An organic light emitting diode display using white organic light emitting device technology may apply a 2-stack or 3-stack tandem structure, and includes a charge generation layer (CGL) between each stack. In the case of 3 stacks, there are structures such as B//R/YG//B, B//R/YG/G//B, and B//YG//B, and other structures have two or more light emitting stacks.

1 is a cross-sectional view of a conventional organic light emitting display device having a white organic light emitting element.

As shown in FIG. 1, a conventional organic light emitting display device having a white organic light emitting element includes an organic light emitting layer 20a formed between a first electrode (pixel electrode) 10 and a second electrode (cathode) 40. (20b) is formed. In order to increase the luminous efficiency, a conversion generating layer (CGL) 30 is formed between the organic light emitting layers 20a and 20b. That is, the organic light emitting layers 20a and 20b include first and second light emitting units 20a and 20b formed with the conversion generating layer 30 interposed therebetween. At this time, the conversion generation layer (CGL) is doped with lithium (Li).

Therefore, due to lithium (Li) doped in the conversion generation layer (CGL), a normal light emitting path (A) in which current flows from the first electrode (pixel electrode) 10 to the second electrode (cathode) 40 occurs. do. However, in addition to the normal light emitting path A, an abnormal light emitting path B is generated to a side sub pixel of a sub pixel. In addition, current flows from the first electrode (pixel electrode) 10 to the second electrode (cathode) 40 through the abnormal light emitting path B, and leakage current occurs.

Due to such a leakage current, the light emitting sub-pixel may partially emit light from a part of the sub-pixel adjacent to the light-emitting sub-pixel or a region of the bank insulating film 50 between the sub-pixels.

2 is an image showing a case where colors are mixed due to leakage current in a conventional organic light emitting display device having a white organic light emitting element.

As shown in FIG. 2, the color emitted from the sub-pixel flows through the abnormal light emitting path B, so that some of the sub-pixels around the sub-pixel and the bank insulating film region 60 between the sub-pixels emit light due to leakage current. do. In this way, the color reproduction rate is reduced due to color mixing caused by light emission in the non-light emitting region 60 . In particular, a color loss phenomenon in a red sub-pixel is more severe. Due to this, there is a problem in that the color gamut of the red region is further reduced.

In addition, there is a problem in that power consumption increases due to parasitic light emission.

The present invention provides an organic light emitting display device capable of reducing color reproducibility deterioration due to color mixing by preventing a color loss phenomenon in which some sub-pixels adjacent to a light-emitting sub-pixel emit light or light is emitted in a bank insulating film region between sub-pixels, and a method for manufacturing the same. intended to provide

Another object of the present invention is to provide an organic light emitting display device capable of preventing an increase in power consumption due to a parasitic current generated in a conversion generation layer (CGL) and a manufacturing method thereof.

The objects of the present invention are not limited to the above-mentioned objects, and other objects and advantages of the present invention not mentioned above can be understood by the following description and will be more clearly understood by the examples of the present invention. It will also be readily apparent that the objects and advantages of the present invention may be realized by means of the instrumentalities and combinations indicated in the claims.

In order to solve this problem, an organic light emitting display device of the present invention exposes a substrate including a plurality of sub-pixel areas, a first electrode formed in each sub-pixel area, and a portion of the upper surface of the first electrode. A bank insulating film including a bank hole for forming a hole and positioned on one side of the first electrode, an organic light emitting layer covering the first electrode and the bank insulating film, and a second electrode covering an upper surface of the organic light emitting layer, wherein the second electrode includes an oxide region overlapping the bank insulating layer.

In addition, the organic light emitting layer includes a charge generation layer (CGL) and a light emitting unit formed with the charge generation layer (CGL) interposed therebetween.

In addition, the lower surface of the second electrode in contact with the organic light emitting layer is oxidized.

In addition, the thickness of the lower surface to be oxidized of the second electrode is formed to a thickness of at least 5 nm or more.

In addition, a driving thin film transistor formed between the substrate and the first electrode, a passivation film covering an upper surface of the driving thin film transistor, a color filter formed in each of a plurality of sub-pixel regions on the passivation film, and a A formed offer code layer is further included.

In addition, the first electrode is formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

In addition, the second electrode is formed of a material such as aluminum (Al) or silver (Ag).

In order to solve this problem, a method of manufacturing an organic light emitting diode display according to an embodiment of the present invention includes forming a first electrode in each sub-pixel area on a substrate, one side of the first electrode, and a top surface of the first electrode. Forming a bank insulating film having a bank hole partially exposed, forming an organic light emitting layer on the first electrode and the bank insulating film, forming a second electrode on the organic light emitting layer, and an upper or lower portion of the substrate and oxidizing a portion of the second electrode overlapping the bank insulating layer through an exposure process using a photomask at the bottom.

In addition, the forming of the first electrode may include forming a transparent conductive material including indium tin oxide (ITO) and indium zinc oxide (IZO) on the substrate through a deposition method of a sputtering method, and , forming a first electrode on each sub-pixel region by etching with a photoresist pattern through an exposure and development process using a photomask.

In addition, the forming of the bank insulating film may include applying an organic insulating material including photoacrylic material to the entire surface of the substrate, and applying the organic insulating material to the entire surface of the first electrode through a photolithography process and an etching process. and patterning a part to have an exposed bank hole.

In the oxidizing of the second electrode, when the exposure process is performed on the substrate, an upper surface to a lower surface of the second electrode overlapping the bank insulating layer is oxidized.

In addition, the oxidizing of the second electrode oxidizes a lower surface of the second electrode overlapping the bank insulating layer when the exposure process is performed under the substrate.

In addition, the lower surface of the second electrode to be oxidized is formed to a thickness of at least 5 nm or more.

In addition, the second electrode is formed of a material such as aluminum (Al) or silver (Ag).

According to an embodiment of the present invention, the organic light emitting display device and method of manufacturing the same according to the present invention partially oxidizes the second electrode (cathode) located in the region between sub-pixels to prevent color loss, thereby preventing color loss due to color mixing. It has the effect of reducing the reproducibility degradation.

In addition, an increase in power consumption due to parasitic current generated in the conversion generation layer (CGL) can be prevented.

1 is a cross-sectional view of a conventional organic light emitting display device having a white organic light emitting element.
2 is an embodiment illustrating a case in which colors are mixed due to leakage current in a conventional organic light emitting display device having a white organic light emitting element.
3 is an equivalent circuit diagram of an organic light emitting display device according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of an organic light emitting display according to R, G, and B sub-pixel areas shown in FIG. 3;
5A to 5F are cross-sectional views illustrating a manufacturing process of an organic light emitting display device according to an exemplary embodiment of the present invention.
6 is a graph showing improved color gamut through the structure of an organic light emitting display device according to an exemplary embodiment of the present invention.
7 is a cross-sectional view showing an organic light emitting layer in detail;

The above objects, features and advantages will be described later in detail with reference to the accompanying drawings, and accordingly, those skilled in the art to which the present invention belongs will be able to easily implement the technical spirit of the present invention. In describing the present invention, if it is determined that the detailed description of the known technology related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to indicate the same or similar components. In addition, a single pixel is composed of red (R), green (G), and blue (B) sub-pixel areas, and each sub-pixel area is spaced apart at a regular interval.

Hereinafter, an organic light emitting diode display according to a preferred embodiment of the present invention and a manufacturing method thereof will be described in detail with reference to drawings.

3 is an equivalent circuit diagram of an organic light emitting display device according to an exemplary embodiment of the present invention, and FIG. 4 is a cross-sectional view of the organic light emitting display device according to the R, G, and B sub-pixel regions shown in FIG. 3 .

Referring to FIGS. 3 and 4 , the organic light emitting diode display according to the exemplary embodiment includes a plurality of sub-pixel regions formed by intersections of gate lines GL, data lines DL, and power lines PL.

The plurality of sub-pixel areas include a red (R) sub-pixel area, a green (G) sub-pixel area, a blue (B) sub-pixel area, and a white (W) sub-pixel area. Red (R), green (G), blue (B), and white (W) sub-pixel areas are arranged in a matrix form to display an image. Each of the red (R), green (G), blue (B), and white (W) sub-pixel regions includes a cell driver 200 and an organic light emitting device connected to the cell driver 200 .

The cell driver 200 includes a switch thin film transistor TS connected to the gate line GL and the data line DL, the switch thin film transistor TS and the power line PL, and the first electrode of the organic light emitting device ( 180) and a storage capacitor (C) connected between the power supply line (PL) and the drain electrode of the switch thin film transistor (TS).

The gate electrode of the switch thin film transistor (TS) is connected to the gate line (GL), the source electrode is connected to the data line (DL), and the drain electrode is connected to the gate electrode of the driving thin film transistor (TD) and the storage capacitor (C). connected The source electrode of the driving thin film transistor TD is connected to the power line PL, and the drain electrode is connected to the first electrode 180 . The storage capacitor C is connected between the power line PL and the gate electrode of the driving thin film transistor TD.

When a scan pulse is supplied to the gate line GL, the switch thin film transistor TS is turned on and transmits the data signal supplied to the data line DL to the storage capacitor C and the gate electrode of the driving thin film transistor TD. supply The driving thin film transistor TD controls the current I supplied from the power line PL to the organic light emitting diode OLED in response to the data signal supplied to the gate electrode, thereby adjusting the amount of light emitted from the organic light emitting diode. Even when the switch thin film transistor TS is turned off, the driving thin film transistor TD supplies a constant current I until the data signal of the next frame is supplied by the voltage charged in the storage capacitor C, thereby organic light emitting. Let the device keep emitting light.

As shown in FIG. 4 , in the organic light emitting display device, the driving thin film transistor 110 connected to the gate line GL is formed on the substrate 100 . The driving thin film transistor 110 includes a gate electrode 111 formed on a substrate 100, a gate insulating film 112 formed on the gate electrode 111, and a gate electrode 111 with the gate insulating film 112 interposed therebetween. an oxide semiconductor layer 113 formed to overlap with, an etch stopper layer 114 formed on the oxide semiconductor layer 113 to prevent damage to the oxide semiconductor layer 113 and protect it from being affected by oxygen; A source electrode 116 connected to the data line DL and a drain electrode 115 facing the source electrode 116 are included.

A protective layer 120 is formed on the driving thin film transistor 110 to planarize the substrate 100 on which the driving thin film transistor is formed.

A color filter 130 is formed on the passivation layer 120 . The color filter 130 emits a red (R) light source by forming a red (R) color filter on the passivation layer 120 in the red (R) sub-pixel region. In addition, the color filter 130 emits a green (G) light source by forming a green (G) color filter on the passivation layer 120 in the green (G) sub-pixel region. In the color filter 130, a blue (B) color filter is formed on the passivation layer 120 in the blue (B) sub-pixel region to emit a blue (B) light source. Meanwhile, the color filter 130 is not formed on the passivation layer 120 of the white (W) sub-pixel area, and a white (W) light source is emitted.

An overcode layer 140 having a pixel contact hole (not shown) is formed on the substrate 100 on which the color filter 130 is formed.

On the substrate 100 on which the overcode layer 140 is formed, the first electrode 150 is formed to overlap the sub-pixel region of the color filter 130 . The first electrode 150 is formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

On the substrate 100 on which the first electrode 150 is formed, a bank insulating layer 160 having a bank hole exposing a portion of the upper surface of the first electrode 150 is formed. An organic emission layer 170 is formed on the substrate 100 on which the bank insulating film 160 is formed.

Subsequently, a second electrode 180 is formed of a material such as aluminum (Al) or silver (Ag) on the substrate 100 on which the organic emission layer 170 is formed. In this case, the second electrode 180 includes an oxide region 180a overlapping between sub-pixel regions of the color filter 130, that is, with the bank insulating layer 160. The oxidized region 180a refers to a region 180a in which a portion of the second electrode overlapping the bank insulating layer is oxidized through an exposure process using a photomask.

When current flows from the first electrode 150 to the second electrode 180, the oxidized region 180a of the second electrode 180 passes through the second electrode 180 in addition to the normal light emitting path to the peripheral sub-pixel of the light emitting sub-pixel. It blocks the flow of current to the pixel. Accordingly, the oxidized region 180a of the second electrode 180 prevents a part of the sub-pixels surrounding the light-emitting sub-pixel from emitting light or a color loss phenomenon in a bank region between the sub-pixels.

A manufacturing method of the organic light emitting display according to the present invention configured as described above will be described in detail with reference to the accompanying drawings. The same reference numerals as in FIG. 4 denote like members performing the same functions.

5A to 5F are cross-sectional views illustrating manufacturing processes of an organic light emitting display device according to an exemplary embodiment of the present invention.

Referring to FIG. 5A , a driving thin film transistor 110, a protective film 120, a color filter 130, and an overcode layer 140 are formed on a substrate 100 made of an insulating material such as transparent glass or plastic.

The driving thin film transistor 110 includes a gate electrode 111 formed on a substrate 100, a gate insulating film 112 formed on the gate electrode 111, and a gate electrode 111 with the gate insulating film 112 interposed therebetween. an oxide semiconductor layer 113 formed to overlap with, an etch stopper layer 114 formed on the oxide semiconductor layer 113 to prevent damage to the oxide semiconductor layer 113 and protect it from being affected by oxygen; A source electrode 116 connected to the data line DL and a drain electrode 115 facing the source electrode 116 are included.

Specifically, the gate metal layer of the driving thin film transistor 110 is formed on the substrate 100 through a deposition method such as a sputtering method. As the gate metal layer, a metal material such as Mo, Ti, Cu, AlNd, Al, Cr, Mo alloy, Al alloy, or Mo-Ti alloy is used. Subsequently, the gate metal layer is patterned through a photolithography process and an etching process, thereby forming the gate electrode 102 .

Subsequently, an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) is formed on the entire surface of the substrate 100 on which the gate electrode 102 is formed, thereby forming the gate insulating film 112 . An oxide semiconductor layer 113 and an etch stopper layer 114 are sequentially formed on the substrate 100 on which the gate insulating layer 112 is formed through a photolithography process and an etching process.

Subsequently, a data metal layer is formed on the substrate 100 on which the semiconductor pattern is formed through a deposition method such as a sputtering method. Here, titanium (Ti), tungsten (W), aluminum (Al)-based metal, molybdenum (Mo), copper (Cu), or the like is used as the data metal layer. In addition, the source electrode 116 and the drain electrode 115 are formed by patterning the data metal layer through a photolithography process and an etching process.

Subsequently, a passivation layer 120 is formed on the substrate 100 on which the driving thin film transistor 110 is formed, and color filters 130 are formed in respective sub-pixel regions.

Specifically, the passivation layer 120 is formed by forming an organic insulating material such as an acrylic resin on the entire surface of the substrate 100 on which the driving thin film transistor 110 is formed. Subsequently, color resists colored with red (R), green (G), and blue (B) are respectively applied to the corresponding sub-pixel areas on the passivation film 120, and then each sub-pixel area is subjected to a photolithography process and an etching process. A color filter 130 is formed on the protective film 120 of the color filter 130 .

Subsequently, an overcode layer 140 having a pixel contact hole is formed on the substrate 100 on which the color filter 130 is formed.

Specifically, since a photosensitive organic film such as an acrylic resin is formed on the substrate 100 on which the color filter 130 is formed, the overcode layer 140 is formed. Next, a pixel contact layer is formed by patterning the passivation layer 120 and the overcode layer 140 through a photolithography process and an etching process. This pixel contact layer exposes the drain electrode 115 of the driving thin film transistor in the corresponding sub-pixel area.

Referring to FIG. 5B , first electrodes 150 are formed on red (R), green (G), blue (B), and white (W) sub-pixel areas on the substrate 100 on which the overcode layer 140 is formed. is formed

Specifically, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is formed on the substrate 100 on which the overcode layer 140 is formed through a deposition method such as a sputtering method. . Subsequently, the transparent conductive material is etched into a photoresist pattern through an exposure and development process using a photomask, thereby forming first electrodes on the red (R), green (G), blue (B), and white (W) sub-pixel areas. (150) is formed.

Referring to FIG. 5C , a bank insulating layer 160 having a bank hole exposing a portion of the upper surface of the first electrode is formed on the substrate 100 on which the first electrode 150 is formed.

Specifically, the bank insulating film 160 formed of an organic insulating material such as photoacrylic is coated on the entire surface of the substrate 100 on which the first electrode 150 is formed. Then, the bank insulating film 160 applied on the entire surface is patterned through a photolithography process and an etching process, thereby forming a bank insulating film 160 having a bank hole in which a part of the upper surface of the first electrode 150 is exposed.

Referring to FIG. 5D , an organic emission layer 170 is formed on the substrate 100 on which the bank insulating layer 160 is formed. 7 is a cross-sectional view showing the organic light emitting layer in detail.

Referring to FIG. 7 , the organic light emitting layer 170 includes a charge generating layer (CGL) and first and second light emitting units 170a and 170b formed with the charge generating layer (CGL) 170c interposed therebetween. . The first and second light emitting units 170a and 170b each include a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL). In particular, the light emitting layer EML1 of the first light emitting unit 170a includes a blue fluorescent dopant and a host to emit blue light, and the light emitting layer EML2 of the second light emitting unit 170b includes a yellow-green phosphorescent dopant and a host. It emits yellow-green light. Accordingly, the blue light of the first light emitting unit 170a and the yellow-green light of the second light emitting unit 170b are mixed so that the organic light emitting layer 170 can emit white light. In addition to this, the organic light emitting layer 170 may implement white light using other fluorescent dopants and phosphorescent dopants.

Referring to FIG. 5E , a second electrode 180 is formed by depositing aluminum (Al) and silver (Ag) on the substrate 100 on which the organic light emitting layer 170 is formed.

Referring to FIG. 5F , the lower or upper portion of the substrate 100 on which the second electrode 180 is formed is exposed between the sub-pixel regions of the color filter 130 through an exposure process using the photomask 190, that is, the bank insulating film 160 ) and the partial region 180a of the second electrode overlapping is oxidized.

In this case, the exposure process may be performed on the lower part or the upper part of the substrate 100 . The exposure process is to block current from flowing through the second electrode 180 to sub-pixels adjacent to the light-emitting sub-pixel through the abnormal light-emitting path. That is, the oxidized region 180a of the second electrode 180 oxidized through the exposure process is formed from the first electrode 150 to the second electrode 180 due to the organic light emitting layer 170, particularly the conversion generation layer (CGL). When current flows through the second electrode 180 in addition to the normal light emitting path, the flow of current to neighboring subpixels of the light emitting subpixel is blocked.

Therefore, in the exposure process, it is preferable to expose the lower surface of the second electrode 180 contacting the organic emission layer 170 to oxidize the lower surface of the second electrode 180 .

Therefore, when the exposure process is performed on the upper part of the substrate 100, the exposure process is performed so that the entire thickness from the upper surface to the lower surface is oxidized to the lower surface of the second electrode 180, so that the second electrode 180 is oxidized. The lower surface of (180) must be oxidized.

In addition, when the exposure process is performed on the lower part of the substrate 100, since the exposure process oxidizes the lower surface of the second electrode 180, the exposure may be performed so that only a partial thickness of the lower surface of the second electrode 180 is oxidized. The thickness to be oxidized in the exposure process is a thickness to block the flow of current to the abnormal light emitting path, and should typically have a thickness of at least 5 nm or more. Accordingly, the lower surface of the second electrode 180 to be oxidized is exposed until it has an oxidized thickness of at least 5 nm or more.

Meanwhile, when the exposure process is performed on the lower part of the substrate 100, as shown in FIG. 5F, the driving thin film transistor 110 may be formed at a position overlapping the oxidation region 180a. there is. Therefore, when the oxidized region 180a of the second electrode 180 is oxidized by exposure from the lower portion of the substrate 100, the light source exposed by the driving thin film transistor 110 is the oxidized region of the second electrode 180 ( 180) may interfere with investigation.

In order to solve this problem, the position where the driving thin film transistor 110 is formed may be moved to one side of the bank insulating film 160, or only the exposed region of the oxidized region 180a of the second electrode 180 may be oxidized. . However, this is only one embodiment, and when the exposure process is performed under the substrate 100, the driving thin film transistor 110 may prevent interference with a light source for exposure through various embodiments.

6 is a graph showing improved color gamut through the structure of an organic light emitting display device according to an exemplary embodiment of the present invention.

As shown in FIG. 6 and Table 1, the color gamut of red (R) based on the color gamut DCI (Digital Cinema Initiatives), in the existing structure, a color loss phenomenon occurs up to 0.600. However, in the structure of the organic light emitting diode display according to the present invention, a color loss phenomenon occurs up to 0.678, and it can be seen that it is reduced compared to the existing structure.

In addition, even in DCI_overlapping, which represents the overlapping area with the color gamut DCI, it can be confirmed that the overlapping area, which was 98.6 in the existing structure, is increased to 98.6 in the structure of the organic light emitting display device of the present invention compared to the existing structure. there is.

Therefore, the organic light emitting display device of the present invention has an effect of reducing color gamut deterioration due to color mixing by preventing a color loss phenomenon in which some sub-pixels around a light-emitting sub-pixel emit light or light is emitted in a bank insulating film region between sub-pixels. it can be seen that there is

The above-described present invention, since various substitutions, modifications, and changes are possible to those skilled in the art without departing from the technical spirit of the present invention, the above-described embodiments and accompanying drawings is not limited by

100: substrate 110: driving thin film transistor
120: protective film 130: color filter
140: overcode layer 150: first electrode
160: bank insulating film 170: organic light emitting layer
180: second electrode 180a: oxidation region
190: photomask

Claims (15)

a substrate including a plurality of sub-pixel areas;
a first electrode formed in each of the sub-pixel areas;
a bank insulating film including a bank hole exposing a portion of an upper surface of the first electrode, and positioned on one side of the first electrode to divide the plurality of sub-pixel areas;
an organic light emitting layer covering the first electrode and the bank insulating layer; and
A second electrode covering the upper surface of the organic light emitting layer;
The second electrode includes a first region overlapping the first electrode and a second region overlapping the bank insulating layer, and an oxidation region disposed in the second region.
According to claim 1,
The organic light emitting layer includes a charge generation layer (CGL) and a light emitting unit formed with the charge generation layer (CGL) interposed therebetween.
According to claim 1,
In the oxidized region of the second electrode, a lower surface contacting the organic light emitting layer in the second region overlapping the upper portion of the bank insulating layer is oxidized.
According to claim 3,
The oxidized region of the second electrode is formed such that a thickness of a lower surface to be oxidized is at least 5 nm or more.
According to claim 1,
a driving thin film transistor formed between the substrate and the first electrode;
a protective film covering an upper surface of the driving thin film transistor;
a color filter formed in each of a plurality of sub-pixel regions on the passivation layer;
The organic light emitting display device further comprises an offer code layer formed on the color filter.
According to claim 1,
The first electrode is formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).
According to claim 1,
The second electrode is formed of a material such as aluminum (Al) or silver (Ag).
forming a first electrode in each sub-pixel region on the substrate;
forming a bank insulating layer on one side of the first electrode and having a bank hole exposing a portion of an upper surface of the first electrode;
forming an organic light emitting layer on the first electrode and the bank insulating layer;
forming a second electrode on the organic light emitting layer;
disposing a photomask on or below the substrate to block a first region of the second electrode overlapping the first electrode and expose a second region of the second electrode overlapping the bank insulating layer; and
Forming an oxidized region by oxidizing a second electrode of the second region through an exposure process using the photomask.
A method of manufacturing an organic light emitting display device.
According to claim 8,
Forming the first electrode
Forming a transparent conductive material including indium tin oxide (ITO) and indium zinc oxide (IZO) on the substrate through a deposition method of a sputtering method;
A method of manufacturing an organic light emitting display device, comprising forming a first electrode on each sub-pixel area by etching with a photoresist pattern through an exposure and development process using a photomask.
According to claim 8,
Forming the bank insulating film
coating an organic insulating material including photoacrylic on the entire surface of the substrate;
and patterning the organic insulating material applied on the entire surface to have a bank hole exposed on a portion of an upper surface of the first electrode through a photolithography process and an etching process.
According to claim 8,
Oxidizing the second electrode of the second region
When the exposure process is performed on the substrate, the upper surface of the second electrode in the second region overlapping with the bank insulating film is oxidized from the upper surface to the lower surface thereof.
According to claim 8,
Oxidizing the second electrode of the second region
and oxidizing a lower surface of the second electrode in the second region overlapping the bank insulating layer and contacting the organic light emitting layer when the exposure process is performed under the substrate.
According to claim 12,
A lower surface of the second electrode to be oxidized is formed to a thickness of at least 5 nm from a surface in contact with the organic light emitting layer.
According to claim 8,
The second electrode is formed of a material such as aluminum (Al) or silver (Ag). According to claim 1,
The oxide region disposed in the second region of the second electrode blocks current from flowing to sub-pixels adjacent to the emission sub-pixel among the plurality of sub-pixel regions.

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