KR102502341B1 - Inductor and manufacturing method thereof - Google Patents

Abstract

The present invention includes a magnetic body, an insulating substrate disposed inside the magnetic body, and a coil unit including coil conductors disposed on one surface and the other surface of the insulating substrate, wherein the coil conductor is formed in two or more layers. The present invention relates to an inductor including a seed pattern, a first plating layer covering the seed pattern to contact side surfaces of each layer of the seed pattern, and a second plating layer covering at least a portion of the first plating layer.

Description

Inductor and manufacturing method thereof {Inductor and manufacturing method thereof}

The present invention relates to an inductor and a manufacturing method thereof.

An inductor, one of chip electronic components, is a typical passive element that forms an electronic circuit together with a resistor and a capacitor to remove noise.

The thin-film inductor is manufactured by forming an internal coil part by plating, curing a magnetic powder-resin composite in which magnetic powder and resin are mixed to manufacture a magnetic body, and forming external electrodes on the outside of the magnetic body.

Japanese Laid-open Patent No. 2006-278479 Japanese Laid-open Patent No. 1998-241983

The present invention relates to a patterned inductor in which DC resistance (Rdc) is reduced by increasing the cross-sectional area of a coil part and a manufacturing method thereof.

One embodiment of the present invention includes a magnetic body, an insulating substrate disposed inside the magnetic body, and a coil unit including coil conductors disposed on one surface and the other surface of the insulating substrate, respectively, wherein the coil conductor comprises: 2 Provided is an inductor including a seed pattern formed in more than one layer, a first plating layer covering the seed pattern to be in contact with a side surface of each layer of the seed pattern, and two plating layers covering at least a portion of the first plating layer.

According to the present invention, the cross-sectional area of the coil unit can be increased and the DC resistance (Rdc) characteristic can be improved.

1 is a schematic perspective view showing a coil unit inside an inductor according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II' of FIG. 1 .
FIG. 3 is a schematic diagram illustrating an enlarged embodiment of part 'A' of FIG. 2 .
FIG. 4 is a schematic diagram showing an enlarged view of another embodiment of part 'A' of FIG. 2 .
5 is a diagram sequentially illustrating a method of manufacturing an inductor according to an embodiment of the present invention.
6A to 6F are diagrams sequentially illustrating a process of forming a seed pattern according to an embodiment of the present invention.
7 is a view showing a process of forming a first plating layer according to an embodiment of the present invention.
8 is a diagram showing a process of forming a second plating layer according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and accompanying drawings. However, the embodiments of the present invention can be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shape and size of elements in the drawings may be exaggerated for clearer explanation, and elements indicated by the same reference numerals in the drawings are the same elements.

In addition, in order to clearly describe the present invention in the drawings, parts irrelevant to the description are omitted, and the thickness is enlarged in order to clearly express various layers and regions, and components having the same function within the scope of the same idea are shown with the same reference. Explain using symbols.

Throughout the specification, when a certain component is said to "include", it means that it may further include other components without excluding other components unless otherwise stated.

inductor

1 is a schematic perspective view showing a coil unit inside an inductor according to an embodiment of the present invention.

Referring to FIG. 1 , as an example of the inductor 100 , a thin film inductor used in a power line of a power supply circuit is disclosed.

The inductor 100 according to an embodiment of the present invention includes a body 50, a coil unit 40 buried inside the body 50, and a coil unit 40 disposed outside the body 50. and first and second external electrodes 81 and 82 electrically connected to each other.

In the inductor 100 according to an embodiment of the present invention, the 'length' direction is the 'L' direction in FIG. 1, the 'width' direction is the 'W' direction, and the 'thickness' direction is the 'T' direction. do it with

The main body 50 forms the appearance of the inductor 100 and is not limited as long as it is a material exhibiting magnetic properties, and may be formed by filling, for example, ferrite or magnetic metal powder.

The ferrite may be, for example, Mn-Zn-based ferrite, Ni-Zn-based ferrite, Ni-Zn-Cu-based ferrite, Mn-Mg-based ferrite, Ba-based ferrite, or Li-based ferrite.

The magnetic metal powder may include at least one selected from the group consisting of Fe, Si, Cr, Al, and Ni, and may be, for example, an Fe-Si-B-Cr-based amorphous metal, but is necessarily limited thereto. It is not.

The magnetic metal powder may have a particle diameter of 0.1 μm to 30 μm, and may be included in a dispersed form in a thermosetting resin such as epoxy resin or polyimide.

The coil part 40 disposed inside the main body 50 includes a first coil conductor 41 formed on one surface of an insulating substrate 20 and a second coil formed on the other surface opposite to one surface of the insulating substrate 20. Coil conductors 42 are connected to form.

The first and second coil conductors 41 and 42 may be formed by electroplating, but are not necessarily limited thereto.

The first and second coil conductors 41 and 42 may be covered with an insulating film (not shown) so that they do not come into direct contact with the magnetic material constituting the main body 50 .

The insulating substrate 20 is formed of, for example, a polypropylene glycol (PPG) substrate, a ferrite substrate, or a metal-based soft magnetic substrate.

The central portion of the insulating substrate 20 is penetrated to form a hole, and the hole is filled with a magnetic material to form the core portion 55 . Inductance Ls can be improved by forming the core portion 55 filled with a magnetic material.

Each of the first and second coil conductors 41 and 42 may have a flat coil shape formed on the same plane of the insulating substrate 20 .

The first and second coil conductors 41 and 42 may be formed in a spiral shape, and the first and second coil conductors 41 and 42 formed on one surface and the other surface of the insulating substrate 20 are They are electrically connected through vias (not shown) formed through the insulating substrate 20 .

The first and second coil conductors 41 and 42 and the vias may be formed of a metal having excellent electrical conductivity, such as silver (Ag), palladium (Pd), aluminum (Al), or nickel (Ni). ), titanium (Ti), gold (Au), copper (Cu), platinum (Pt), or alloys thereof.

DC resistance (Rdc), one of the main characteristics of an inductor, decreases as the cross-sectional area of the coil conductor forming the internal coil part increases. In addition, the inductance of an inductor increases as the area of the magnetic body through which the magnetic flux passes increases.

Therefore, in order to lower the direct current resistance (Rdc) and improve the inductance, it is necessary to increase the cross-sectional area of the coil conductor forming the inner coil unit and increase the volume occupied by the magnetic body.

In order to increase the cross-sectional area of the coil conductor, there are a method of increasing the width of the coil and a method of increasing the thickness of the coil.

However, when the coil width is increased, the possibility of short circuit between adjacent coils becomes very high, the number of coil turns that can be implemented is limited, and the volume of the magnetic body is reduced, which reduces efficiency and limits the implementation of high-capacity products. there is

Accordingly, there is a demand for a coil conductor having a structure having a high aspect ratio (AR) by increasing the coil thickness to the coil width.

The aspect ratio (AR) of the coil conductor is a value obtained by dividing the coil thickness by the coil width, and a higher aspect ratio (AR) can be implemented as the increase in the coil thickness is greater than the increase in the coil width.

However, in the case of conventionally forming a coil conductor by performing a pattern plating method in which a plating resist is patterned through exposure and development processes and then plated, the plating resist must be made thick in order to form a thick coil. There was a difficulty in increasing the thickness of the coil due to limitations in the exposure process in which exposure of the lower portion of the plating resist was not smooth as the thickness was increased.

In addition, thick plating resist must have a certain width or more to maintain its shape. After removing the plating resist, the width of the plating resist becomes the distance between adjacent coils, so the distance between adjacent coils widens, resulting in DC resistance (Rdc) and inductance (Ls) There was a limit to improvement of characteristics.

On the other hand, in Patent Document 2 of the prior art literature, in order to solve the exposure limit according to the thickness of the resist film, a first resist pattern is formed by exposure and development, and then a first plating conductor pattern is formed, and the first resist pattern is exposed again The process of forming the second plating conductor pattern after forming the second resist pattern by development is disclosed.

However, when the inner coil part is formed by performing only the pattern plating method as in Patent Document 2, there is a limit to increasing the cross-sectional area of the inner coil part, and the distance between adjacent coils widens, resulting in DC resistance (Rdc) and inductance (Ls) characteristics Difficulty improving.

Accordingly, in one embodiment of the present invention, a seed pattern is formed in two or more layers, a first plating layer covering the seed pattern is formed to contact the side surface of each layer of the seed pattern, and at least a portion of the first plating layer is formed. By further forming the covering second plating layer, a coil conductor having a high aspect ratio (AR), an increased cross-sectional area, and narrowing the gap between adjacent coils while preventing shorts between adjacent coils can be implemented. did

Detailed structures and manufacturing methods of the first and second coil conductors 41 and 42 according to an embodiment of the present invention will be described later.

FIG. 2 is a cross-sectional view taken along line II' of FIG. 1 .

Referring to FIG. 2 , the first and second coil conductors 41 and 42 are formed on a first seed pattern layer 61a formed on an insulating substrate 20 and on an upper surface of the first seed pattern layer 61a. The formed second seed pattern layer 61b, the first plating layer 62 covering the first and second seed pattern layers 61a and 61b, and the second plating layer 63 formed on the upper surface of the first plating layer include

One end of the first coil conductor 41 formed on one surface of the insulating substrate 20 is exposed to one end surface of the body 50 in the length L direction, and the second coil formed on the other surface of the insulating substrate 20 One end of the conductor 42 is exposed to the other end face of the body 50 in the length L direction.

However, it is not necessarily limited thereto, and one ends of each of the first and second coil conductors 41 and 42 may be exposed to at least one surface of the main body 50 .

First and second external electrodes 81 and 82 are formed outside the body 50 to connect to the first and second coil conductors 41 and 42 exposed through the end face of the body 50, respectively. .

FIG. 3 is a schematic diagram illustrating an enlarged embodiment of part 'A' of FIG. 2 .

Referring to FIG. 3 , the seed pattern 61 according to an embodiment of the present invention includes a first seed pattern layer 61a and a second seed pattern layer 61b formed on the upper surface of the first seed pattern layer 61a. ), wherein the seed pattern 61 is covered with a first plating layer 62, and a second plating layer 63 is further formed on the upper surface of the first plating layer 62. The first plating layer 62 contacts side surfaces of the first and second seed pattern layers 61a and 61b, respectively.

The seed pattern 61 may be formed by pattern plating in which a plating resist patterned through an exposure and development process is formed on the insulating substrate 20 and an opening is filled with plating.

The seed pattern 61 according to an embodiment of the present invention is formed in at least two layers including the first seed pattern layer 61a and the second seed pattern layer 61b.

In this drawing of FIG. 3, the seed pattern 61 is shown as two layers including first and second seed pattern layers 61a and 61b, but is not necessarily limited thereto, and within the range that a person skilled in the art can utilize, three It is possible to form more than one layer.

The seed pattern 61 may have a total thickness (t _SP ) of 100 μm or more.

By forming the seed pattern 61 in a structure of two or more layers, the exposure limit according to the thickness of the plating resist can be overcome and the total thickness (t _SP ) of the seed pattern 61 can be implemented as 100 μm or more. As the total thickness (t _SP ) of the seed pattern 61 is formed to be 100 μm or more, the thickness of the coil conductors 41 and 42 can be increased, and the coil conductor 41 having a high aspect ratio (AR) 42) can be implemented.

The seed pattern 61 may have a rectangular cross section in the thickness (T) direction.

As described above, the seed pattern 61 is formed by pattern plating, and thus may have a straight rectangular cross-section.

The first and second coil conductors 41 and 42 further include a thin film conductor layer 25 disposed on a lower surface of the seed pattern 61 .

The thin film conductor layer 25 may be formed by etching after performing an electroless plating or sputtering method on the insulating substrate 20 .

A seed pattern 61 is formed by performing electroplating on the thin film conductor layer 25 using the thin film conductor layer 25 as a seed layer.

The first plating layer 62 covering the seed pattern 61 may be formed by electroplating using the seed pattern 61 as a seed layer.

By forming the first plating layer 62 covering the seed pattern 61, it is possible to solve the problem that it is difficult to reduce the gap between adjacent coils due to the limitation in narrowing the width of the plating resist when only the seed pattern is formed by pattern plating. The DC resistance (Rdc) and inductance (Ls) characteristics may be improved by further increasing the cross-sectional area of the conductor.

The first plating layer 62 according to one embodiment of the present invention shown in FIG. 3 exhibits a shape in which the degree of growth in the width direction (W _P1 ) and the degree of growth in the thickness direction (T _P1 ) are similar.

In this way, the first plating layer 62 covering the seed pattern 61 is formed as an isotropically grown plating layer having similar width-direction growth (W _P1 ) and thickness-direction growth (T _P1 ), thereby reducing the thickness difference between adjacent coils and making it uniform. It can have one thickness, and accordingly, DC resistance (Rdc) distribution can be reduced.

In addition, by forming the first plating layer 62 as an isotropically grown plating layer, the first and second coil conductors 41 and 42 are formed straight without bending, thereby preventing a short between adjacent coils. A defect in which an insulating film is not formed on a part of the two-coil conductors 41 and 42 can be prevented.

In this drawing of FIG. 3 , the first plating layer 62 is illustrated as one layer, but is not necessarily limited thereto, and the first plating layer 62 may be formed in two or more layers within the range available to those skilled in the art. do.

The second plating layer 63 formed on the upper surface of the first plating layer 62 may be formed by performing electroplating.

By further forming the second plating layer 63 on the first plating layer 62, the cross-sectional area of the coil conductor may be further increased, and DC resistance (Rdc) and inductance (Ls) characteristics may be improved.

The second plating layer 63 according to one embodiment of the present invention shown in FIG. 3 has a shape in which growth in the width direction is suppressed and the degree of growth in the thickness direction (T _P2 ) is remarkably large.

In this way, the second plating layer 63 formed on the first plating layer 62 is formed as an anisotropically grown plating layer, which suppresses growth in the width direction and has a remarkably large degree of growth in the thickness direction (T _P2 ), thereby preventing a short between adjacent coils. However, the cross-sectional area of the coil conductor can be further increased.

The second plating layer 63, which is an anisotropically grown plating layer, is formed on the upper surface of the first plating layer 62 and has a shape that does not cover all of the side surfaces of the first plating layer 62.

An aspect ratio (AR) of the first and second coil conductors 41 and 42 according to an embodiment of the present invention formed as described above may be 3.0 or more.

FIG. 4 is a schematic diagram showing an enlarged view of another embodiment of part 'A' of FIG. 2 .

Referring to FIG. 4 , the second plating layer 63 according to another embodiment of the present invention includes the 2-1st plating layer 63a formed on the upper surface of the first plating layer 62 and the 2-1st upper plating layer ( 63a) includes a 2-2 upper plating layer 63b formed on the upper surface.

The 2-1st and 2-2nd plating layers 63a and 63b are anisotropically grown plating layers in which growth in the width direction is suppressed and the degree of growth in the thickness direction (T _P2 ) is remarkably large, as in the embodiment shown in FIG. 3 described above. It is a shape in which the anisotropically grown plating layer is formed in two layers.

In this way, by forming two or more layers of the second plating layer 63, which is an anisotropically grown plating layer, the cross-sectional area of the coil conductor can be further increased, and DC resistance (Rdc) and inductance (Ls) characteristics can be improved.

In this drawing of FIG. 4 , the second plating layer 63 is shown as two layers, but is not necessarily limited thereto, and the second plating layer 63 may be formed in two or more layers within the range available to those skilled in the art. do.

Manufacturing method of inductor

5 is a diagram sequentially illustrating a method of manufacturing an inductor according to an embodiment of the present invention.

Referring to FIG. 5( a ) , an insulating substrate 20 is prepared and via holes 45 ′ are formed in the insulating substrate 20 .

The via hole 45' may be formed using a mechanical drill or a laser drill, but is not necessarily limited thereto.

The laser drill may be, for example, a CO ₂ laser or a YAG laser.

Referring to FIG. 5(b), a thin film conductor layer 25' is formed on the upper and lower surfaces of the insulating substrate 20 as a whole, and a plating resist 71 having an opening for forming a seed pattern is formed.

The plating resist 71 is a conventional photosensitive resist film, and a dry film resist or the like may be used, but is not necessarily limited thereto.

After the plating resist 71 is applied, an opening for forming a conductive pattern may be formed through exposure and development processes.

Referring to FIG. 5(c) , the seed pattern 61 is formed by filling the opening for forming the seed pattern with a conductive metal by plating.

Using the thin film conductor layer 25' as a seed layer, the opening for forming the seed pattern is filled with a conductive metal by electroplating to form the seed pattern 61, and the via hole 45' is formed by electroplating. Filled with a conductive metal to form a via (not shown).

At this time, in one embodiment of the present invention, the seed pattern 61 is formed in two or more layers so that the coil conductors 41 and 42 have a high aspect ratio (AR), and a specific manufacturing method thereof will be described later .

Referring to FIG. 5(d), the plating resist 71 is removed and the thin film conductor layer 25' is etched so that the thin film conductor layer 25 is formed only on the lower surface of the seed pattern 61.

Referring to FIG. 5(e) , a first plating layer 62 covering the seed pattern 61 and a second plating layer 63 covering at least a portion of the first plating layer 62 are formed.

The first plating layer 62 and the second plating layer 63 are formed by electroplating.

Referring to FIG. 5(f) , the insulating substrate excluding the region where the first and second coil conductors 41 and 42 including the seed pattern 61, the first plating layer 62, and the second plating layer 63 are formed. Remove part (20).

The central portion of the insulating substrate 20 is removed to form a core portion hole 55'.

Removal of the insulating substrate 20 may be performed through mechanical drilling, laser drilling, sand blasting, punching, or the like.

Referring to FIG. 5(g), an insulating film 30 covering the first and second coil conductors 41 and 42 is formed.

The insulating film 30 may be formed by a known method such as screen printing, exposure of photoresist (PR), a process through development, or a spray coating process.

Referring to FIG. 5(h), a body 50 is formed by stacking, compressing, and curing magnetic sheets on the upper and lower portions of the first and second coil conductors 41 and 42.

At this time, the core part hole 55' is filled with a magnetic material to form the core part 55.

Next, first and second external electrodes 81 and 82 are disposed on the outside of the body 50 so as to be connected to ends of the first and second coil conductors 41 and 42 exposed through the cross section of the body 50, respectively. ) to form

6A to 6F are diagrams sequentially illustrating a process of forming a conductive pattern according to an embodiment of the present invention.

Referring to FIG. 6A , a first plating resist 71 having an opening 71a' for forming the first seed pattern layer is formed on the insulating substrate 20 on which the thin film conductor layer 25' is formed as a whole.

After the first plating resist 71a is coated, an opening 71a' for forming the first seed pattern layer may be formed through exposure and development processes.

The thickness of the first plating resist 71a may be 40 μm to 60 μm.

Referring to FIG. 6B, the opening 71a' for forming the first seed pattern layer is filled with a conductive metal by plating to form the first seed pattern layer 61a.

Referring to FIG. 6C , a second plating resist 71b having an opening 71b' for forming a second seed pattern layer is formed on the first plating resist 71a.

After coating the second plating resist 71b on the first plating resist 71a and the first conductive pattern 61a, exposing the first seed pattern layer 61a through an exposure and developing process. 2 An opening 71b' for forming the seed pattern layer may be formed.

The second plating resist 71b may have a thickness of 40 μm to 60 μm.

Referring to FIG. 6D, the second seed pattern layer 61b is formed on the upper surface of the first seed pattern layer 61a by filling the opening 71b' for forming the second seed pattern layer with a conductive metal by plating. form

Referring to FIG. 6E , the first and second plating resists 71a and 71b are removed.

Referring to FIG. 6F, the thin film conductor layer 25' is etched so that the thin film conductor layer 25 is formed only on the lower surfaces of the seed pattern layers 61a and 61b.

The seed pattern 61 thus formed has a two-layer structure.

A cross section of the seed pattern 61 in the thickness (T) direction may have a rectangular shape, and the total thickness (t _SP ) of the seed pattern 61 may be 100 μm or more.

Meanwhile, in the drawings of FIGS. 6A to 6F, only the process of forming the first and second seed pattern layers 61a and 61b is illustrated, but the above-described processes of FIGS. 6C and 6D are repeatedly performed. Thus, a seed pattern having a structure of two or more layers including at least one inner interface S _if may be formed.

On the other hand, the method of forming a seed pattern having a structure of two or more layers is not necessarily limited to the above-described processes of FIGS. 6A to 6F, and after forming a thicker plating resist, the number of plating is increased to 2 or more to 2 A seed pattern having a structure of more than one layer may be formed.

7 is a view showing a process of forming a first plating layer according to an embodiment of the present invention.

Referring to FIG. 7 , electroplating is performed based on the seed pattern 61 to form a first plating layer 62 covering the seed pattern 61 .

At this time, during electroplating, the first plating layer 62 according to an embodiment of the present invention is formed by adjusting the current density, the concentration of the plating solution, the plating speed, etc. in the width direction (W _P1 ) and the thickness as shown in FIG. An isotropically grown plating layer having a similar directional growth degree (T _P1 ) may be formed.

In this way, the first plating layer 62 covering the seed pattern 61 is formed as an isotropically grown plating layer having similar width-direction growth (W _P1 ) and thickness-direction growth (T _P1 ), thereby reducing the thickness difference between adjacent coils and making it uniform. It can have one thickness, and accordingly, DC resistance (Rdc) distribution can be reduced.

In addition, by forming the first plating layer 62 as an isotropically grown plating layer, the first and second coil conductors 41 and 42 are formed straight without bending, thereby preventing a short between adjacent coils. A defect in which the insulating film 30 is not formed on a portion of the two-coil conductors 41 and 42 can be prevented.

8 is a diagram showing a process of forming a second plating layer according to an embodiment of the present invention.

Referring to FIG. 8 , electroplating is performed on the first plating layer 62 to further form a second plating layer 63 .

At this time, during electroplating, current density, concentration of plating solution, plating speed, etc. are adjusted to form the second plating layer 63 according to an embodiment of the present invention as shown in FIG. (T _P2 ) can be formed as a remarkably large anisotropically grown plating layer.

In the second plating layer 63, the 2-1 plating layer 63a is formed on the upper surface of the first plating layer 62, and the 2-2 plating layer 63a is formed on the upper surface of the 2-1 upper plating layer 63a. The upper plating layer 63b may be formed in two layers.

In this way, by forming two or more layers of the second plating layer 63, which is an anisotropically grown plating layer, the cross-sectional area of the coil conductor can be further increased, and DC resistance (Rdc) and inductance (Ls) characteristics can be improved.

Except for the above description, descriptions overlapping with the characteristics of the inductor according to the embodiment described above will be omitted here.

The present invention is not limited by the embodiments, and various forms of substitution and modification are possible by those skilled in the art, and if they represent the same or equivalent idea, they are not described in the present embodiment. Even if it is, it should be construed within the scope of the present invention, and components described in the embodiments of the present invention but not described in the claims are not limitedly interpreted as essential components of the present invention.

100: inductor
20: insulated substrate
25: thin film conductor layer
30: insulating film
40: coil part
41, 42: first and second coil conductors
50: body
55: core part
61: seed pattern
61a, 61b: seed pattern layer
62: surface plating layer
63, 63a, 63b: upper plating layer
71, 71a, 71b: plating resist

Claims (10)

magnetic body;
an insulating substrate disposed inside the magnetic body;
a coil unit including coil conductors respectively disposed on one surface and the other surface of the insulating substrate; and
external electrodes disposed on the magnetic body and connected to the coil unit; including,
The coil conductor includes a seed pattern formed in two or more layers, a first plating layer covering the seed pattern so as to contact side surfaces of each layer of the seed pattern, and a second plating layer covering at least a portion of the first plating layer, ,
The first plating layer is in contact with the insulating substrate,
inductor.
According to claim 1,
The seed pattern includes a first seed pattern layer and a second seed pattern layer disposed on the first seed pattern layer,
The first plating layer is in contact with the side surface of each of the first and second seed pattern layers,
inductor.
According to claim 2,
In a cross section parallel to the thickness direction of the magnetic body,
A width of one region of the second seed pattern layer adjacent to the first seed pattern layer is greater than a width of another region of the second seed pattern layer spaced apart from the first seed pattern layer than the one region,
inductor.
According to claim 2,
The coil unit further includes vias penetrating the insulating substrate and connecting the coil conductors respectively disposed on one surface and the other surface of the insulating substrate to each other,
The first seed pattern layer and the via are integrally formed with each other,
inductor.
According to claim 1,
The first plating layer,
An inductor grown in a thickness direction of the magnetic body and in a direction perpendicular to the thickness direction of the magnetic body.
According to claim 5,
The first plating layer,
The inductor of claim 1 , wherein a length grown from an upper surface of the seed pattern in a thickness direction of the magnetic body is the same as a length grown from a side surface of the seed pattern in a direction perpendicular to the thickness direction of the magnetic body.
According to claim 5,
The second plating layer,
The inductor of claim 1 , wherein a length extending from the upper surface of the first plating layer in a thickness direction of the magnetic body is greater than a length growing in a direction perpendicular to the thickness direction of the magnetic body from a side surface of the first plating layer.
According to claim 7,
a thin film conductor layer disposed between the insulating substrate and the seed pattern; Including more,
The first plating layer is in contact with the side surface of the thin film conductor layer,
inductor.
According to claim 1,
The magnetic body includes a magnetic metal powder and a thermosetting resin.
inductor.
According to claim 1,
an insulating film disposed between the coil conductor and the magnetic body to cover the coil conductor; Further comprising an inductor.

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