KR102500012B1 - Novel compound and organic electroluminescent divice including the same - Google Patents

Novel compound and organic electroluminescent divice including the same Download PDF

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KR102500012B1
KR102500012B1 KR1020170076559A KR20170076559A KR102500012B1 KR 102500012 B1 KR102500012 B1 KR 102500012B1 KR 1020170076559 A KR1020170076559 A KR 1020170076559A KR 20170076559 A KR20170076559 A KR 20170076559A KR 102500012 B1 KR102500012 B1 KR 102500012B1
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phenyl
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권동열
안현철
강경민
함호완
민병철
한정우
문종훈
서정아
임동환
이형진
김승호
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Abstract

본원은 신규한 화합물, 및 이를 포함하는 유기 발광 소자에 관한 것으로, 본 발명의 일 구현예에 따른 신규한 화합물은 유기 발광 소자에 적용되어 유기발광소자의 고효율, 장수명, 낮은 구동전압 및 구동 안정성을 확보할 수 있다.The present application relates to a novel compound and an organic light emitting device including the same, and the novel compound according to one embodiment of the present invention is applied to an organic light emitting device to achieve high efficiency, long lifespan, low driving voltage and driving stability of the organic light emitting device. can be secured

Description

신규 화합물 및 이를 포함하는 유기 발광 소자{NOVEL COMPOUND AND ORGANIC ELECTROLUMINESCENT DIVICE INCLUDING THE SAME}Novel compound and organic light emitting device containing the same {NOVEL COMPOUND AND ORGANIC ELECTROLUMINESCENT DIVICE INCLUDING THE SAME}

본원은 신규한 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다.The present application relates to a novel compound and an organic light emitting device including the same.

유기발광다이오드에서 유기물 층으로 사용되는 재료는 크게 기능에 따라, 발광 재료, 정공주입 재료, 정공수송 재료, 전자수송 재료, 전자주입 재료 등으로 분류될 수 있다. 그리고 상기 발광 재료는 분자량에 따라 고분자와 저분자로 분류될 수 있고, 발광 메커니즘에 따라 전자의 일중항 여기상태로부터 유래되는 형광 재료와 전자의 삼중항 여기상태로부터 유래되는 인광 재료로 분류될 수 있으며, 발광 재료는 발광색에 따라 청색, 녹색, 적색 발광 재료와 보다 나은 천연색을 구현하기 위해 필요한 노란색 및 주황색 발광 재료로 구분될 수 있다. 또한, 색순도의 증가와 에너지 전이를 통한 발광 효율을 증가시키기 위하여, 발광 물질로서 호스트/도판트 계를 사용할 수 있다. 그 원리는 발광층을 주로 구성하는 호스트보다 에너지 대역 간극이 작고 발광 효율이 우수한 도판트를 발광층에 소량 혼합하면, 호스트에서 발생한 엑시톤이 도판트로 수송되어 효율이 높은 빛을 내는 것이다. 이때 호스트의 파장이 도판트의 파장대로 이동하므로, 이용하는 도판트와 호스트의 종류에 따라 원하는 파장의 빛을 얻을 수 있다. Materials used as organic layers in organic light emitting diodes can be largely classified into light emitting materials, hole injection materials, hole transport materials, electron transport materials, electron injection materials, and the like according to their functions. And the light emitting materials can be classified into high molecular weight and low molecular weight according to molecular weight, and can be classified into fluorescent materials derived from singlet excited states of electrons and phosphorescent materials derived from triplet excited states of electrons according to light emitting mechanisms, Light emitting materials can be classified into blue, green, and red light emitting materials and yellow and orange light emitting materials required to realize better natural colors according to the light emitting color. In addition, in order to increase color purity and increase light emitting efficiency through energy transfer, a host/dopant system may be used as a light emitting material. The principle is that when a small amount of a dopant having a smaller energy band gap and higher luminous efficiency than the host constituting the light emitting layer is mixed in the light emitting layer in a small amount, excitons generated in the host are transported to the dopant to emit light with high efficiency. At this time, since the wavelength of the host moves to the wavelength range of the dopant, light having a desired wavelength can be obtained according to the type of dopant and host used.

현재까지 이러한 유기발광소자에 사용되는 물질로서 다양한 화합물들이 알려져 있으나, 이제까지 알려진 물질을 이용한 유기발광소자의 경우 높은 구동전압, 낮은 효율 및 짧은 수명으로 인해 새로운 재료의 개발이 지속적으로 요구되고 있다. 따라서, 우수한 특성을 갖는 물질을 이용하여 저전압 구동, 고휘도 및 장수명을 갖는 유기발광소자를 개발하려는 노력이 지속되어 왔다.Until now, various compounds have been known as materials used in organic light emitting devices, but in the case of organic light emitting devices using known materials, development of new materials is continuously required due to high driving voltage, low efficiency, and short lifespan. Therefore, efforts have been made to develop an organic light emitting device having low voltage driving, high luminance, and long lifespan using a material having excellent characteristics.

한국 공개특허 10-2015-0086721Korean Patent Publication 10-2015-0086721

본원은 신규한 유기 화합물, 이의 제조 방법 및 이를 포함하는 유기 발광 소자를 제공한다.The present application provides a novel organic compound, a method for preparing the same, and an organic light emitting device including the same.

그러나 본원이 해결하고자 하는 과제는 이상에서 기술한 과제로 제한되지 않으며, 기술되지 않은 다른 과제들은 아래의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다.However, the problem to be solved by the present application is not limited to the problem described above, and other problems not described will be clearly understood by those skilled in the art from the description below.

본원의 제1 측면은 하기 화학식 1로서 표시되는 화합물을 제공한다:A first aspect of the present application provides a compound represented by Formula 1 below:

[화학식 1][Formula 1]

Figure 112017057734110-pat00001
Figure 112017057734110-pat00001

상기 화학식 1에서,In Formula 1,

X는 O, S, 또는 CR1R2 이고, R1 및 R2는 각각 독립적으로 치환 또는 비치환의 C1 ~ C30의 알킬기, 또는 치환 또는 비치환의 C6 ~ C30의 아릴기이며,X is O, S, or CR 1 R 2 And, R 1 and R 2 are each independently a substituted or unsubstituted C 1 ~ C 30 alkyl group, or a substituted or unsubstituted C 6 ~ C 30 aryl group,

Ar1은 치환 또는 비치환의 C6 ~ C30의 아릴기 또는 치환 또는 비치환의 C3 ~ C30의 헤테로아릴기이고,Ar 1 is a substituted or unsubstituted C 6 ~ C 30 aryl group or a substituted or unsubstituted C 3 ~ C 30 heteroaryl group;

L은 직접 결합, 또는 치환 또는 비치환의 C6 ~ C18 아릴렌기이며, L is a direct bond or a substituted or unsubstituted C 6 to C 18 arylene group;

Ar2 및 Ar3은 각각 독립적으로 치환 또는 비치환의 C6 ~ C30의 아릴기 또는 치환 또는 비치환의 C3 ~ C30의 헤테로아릴기이고(단, Ar1, Ar2 및 Ar3은 트리페닐렌기는 아니다),Ar 2 and Ar 3 are each independently a substituted or unsubstituted C 6 ~ C 30 aryl group or a substituted or unsubstituted C 3 ~ C 30 heteroaryl group (provided that Ar 1 , Ar 2 and Ar 3 are triphenyl not Rengi),

H는 수소이다.H is hydrogen;

본원의 제2 측면은 제1 전극 및 제2 전극 사이에 본원에 따른 화합물을 함유하는 유기물층을 포함하는 유기 발광 소자를 제공한다.A second aspect of the present application provides an organic light emitting device including an organic material layer containing a compound according to the present application between a first electrode and a second electrode.

본 발명의 일 구현예에 따른 화합물은 카바졸의 6번 위치에 다이벤조퓨란, 다이벤조싸이오펜, 또는 플루오렌이 결합되고, 카바졸의 3번 위치에 아릴아민이 결합된 것으로, 유기발광소자에 사용될 수 있다. 본 발명에 따른 화합물은 화학식 1의 구조를 가짐으로써 정공주입 및 정공수송이 용이한 HOMO 에너지 레벨로 조절할 수 있어 낮은 구동전압을 가질 수 있다. The compound according to one embodiment of the present invention is one in which dibenzofuran, dibenzothiophene, or fluorene is bonded to the 6-position of carbazole and arylamine is bonded to the 3-position of carbazole. can be used for Since the compound according to the present invention has the structure of Chemical Formula 1, it can be adjusted to a HOMO energy level that facilitates hole injection and hole transport, and thus can have a low driving voltage.

또한, 본 발명의 일 구현예에 따른 화합물은 카바졸과 다이벤조퓨란, 다이벤조싸이오펜 또는 플루오렌이 결합되어 있어, 높은 삼중항 에너지를 유지할 수 있어 인광소자에 적용할 수 있으며, 고효율을 달성할 수 있다.In addition, since the compound according to one embodiment of the present invention is a combination of carbazole and dibenzofuran, dibenzothiophene or fluorene, it can maintain high triplet energy and can be applied to a phosphorescent device, achieving high efficiency can do.

또한, 본 발명의 일 구현예에 따른 화합물은 홀 모빌리티(hole mobility)가 증대되어 롤-오프(roll-off) 현상을 억제하여 고효율 및 장수명을 달성할 수 있다. In addition, the compound according to one embodiment of the present invention can achieve high efficiency and long lifespan by suppressing a roll-off phenomenon by increasing hole mobility.

또한, 높은 유리전이온도를 가져 박막 재결정화를 방지할 수 있고, 이에 따라 열 안정성이 증가되고, 구동 안정성을 확보할 수 있다.In addition, recrystallization of the thin film can be prevented by having a high glass transition temperature, and thus thermal stability is increased and driving stability can be secured.

도 1은 본원의 일 구현예에 따른 유기 발광 소자의 개략도를 나타낸 것이다.1 shows a schematic diagram of an organic light emitting device according to an embodiment of the present application.

이하, 첨부한 도면을 참조하여 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 본원의 구현예 및 실시예를 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, embodiments and embodiments of the present application will be described in detail so that those skilled in the art can easily practice the present invention.

그러나 본원은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 구현예 및 실시예에 한정되지 않는다. 그리고 도면에서 본 발명을 명확하게 설명하기 위해서 설명과 관계없는 부분은 생략하였으며, 명세서 전체를 통하여 유사한 부분에 대해서는 유사한 도면 부호를 붙였다.However, the present disclosure may be embodied in many different forms and is not limited to the implementations and examples described herein. And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

본원 명세서 전체에서, 어떤 부재가 다른 부재 "상에" 위치하고 있다고 할 때, 이는 어떤 부재가 다른 부재에 접해 있는 경우뿐 아니라 두 부재 사이에 또 다른 부재가 존재하는 경우도 포함한다.Throughout the present specification, when a member is said to be located “on” another member, this includes not only a case where a member is in contact with another member, but also a case where another member exists between the two members.

본원 명세서 전체에서, 어떤 부분이 어떤 구성 요소를 "포함" 한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성 요소를 제외하는 것이 아니라 다른 구성 요소를 더 포함할 수 있는 것을 의미한다. 본원 명세서 전체에서 사용되는 정도의 용어 "약", "실질적으로" 등은 언급된 의미에 고유한 제조 및 물질 허용오차가 제시될 때 그 수치에서 또는 그 수치에 근접한 의미로 사용되고, 본원의 이해를 돕기 위해 정확하거나 절대적인 수치가 언급된 개시 내용을 비양심적인 침해자가 부당하게 이용하는 것을 방지하기 위해 사용된다. 본원 명세서 전체에서 사용되는 정도의 용어 "~(하는) 단계" 또는 "~의 단계"는 "~ 를 위한 단계"를 의미하지 않는다.Throughout the present specification, when a part "includes" a certain component, it means that it may further include other components without excluding other components unless otherwise stated. As used throughout this specification, the terms "about," "substantially," and the like are used at or approximating that value when manufacturing and material tolerances inherent in the stated meaning are given, and do not convey the understanding of this application. Accurate or absolute figures are used to help prevent exploitation by unscrupulous infringers of the disclosed disclosure. The term "step of (doing)" or "step of" as used throughout the present specification does not mean "step for".

본원 명세서 전체에서, 마쿠시 형식의 표현에 포함된 "이들의 조합"의 용어는 마쿠시 형식의 표현에 기재된 구성 요소들로 이루어진 군에서 선택되는 하나 이상의 혼합 또는 조합을 의미하는 것으로서, 상기 구성 요소들로 이루어진 군에서 선택되는 하나 이상을 포함하는 것을 의미한다.Throughout the present specification, the term "combination thereof" included in the expression of the Markush form means one or more mixtures or combinations selected from the group consisting of the components described in the expression of the Markush form, and the components It means including one or more selected from the group consisting of.

본원 명세서 전체에서, "A 및/또는 B"의 기재는, "A 또는 B, 또는 A 및 B"를 의미한다. Throughout this specification, reference to "A and/or B" means "A or B, or A and B".

본원 명세서 전체에서, 용어 "아릴"은 C5-30의 방향족 탄화수소 고리기, 예를 들어, 페닐, 벤질, 나프틸, 비페닐, 터페닐, 플루오렌, 페난트레닐, 트리페닐레닐, 페릴레닐, 크리세닐, 플루오란테닐, 벤조플루오레닐, 벤조트리페닐레닐, 벤조크리세닐, 안트라세닐, 스틸베닐, 파이레닐 등의 방향족 고리를 포함하는 것을 의미하며, "헤테로아릴"은 적어도 1 개의 헤테로 원소를 포함하는 C3-30의 방향족 고리로서, 예를 들어, 피롤릴, 피라지닐, 피리디닐, 인돌릴, 이소인돌릴, 푸릴, 벤조푸라닐, 이소벤조푸라닐, 디벤조푸라닐, 벤조티오페닐, 디벤조티오페닐, 퀴놀릴기, 이소퀴놀릴, 퀴녹살리닐, 카르바졸릴, 페난트리디닐, 아크리디닐, 페난트롤리닐, 티에닐, 및 피리딘 고리, 피라진 고리, 피리미딘 고리, 피리다진 고리, 트리아진 고리, 인돌 고리, 퀴놀린 고리, 아크리딘고리, 피롤리딘 고리, 디옥산 고리, 피페리딘 고리, 모르폴린 고리, 피페라진 고리, 카르바졸 고리, 푸란 고리, 티오펜 고리, 옥사졸 고리, 옥사디아졸 고리, 벤조옥사졸 고리, 티아졸 고리, 티아디아졸 고리, 벤조티아졸 고리, 트리아졸 고리, 이미다졸 고리, 벤조이미다졸 고리, 피란 고리, 디벤조푸란 고리로부터 형성되는 헤테로고리기를 포함하는 것을 의미할 수 있다.Throughout this specification, the term "aryl" refers to a C 5-30 aromatic hydrocarbon ring group, such as phenyl, benzyl, naphthyl, biphenyl, terphenyl, fluorene, phenanthrenyl, triphenylenyl, peryle It means containing an aromatic ring such as yl, chrysenyl, fluoranthenyl, benzofluorenyl, benzotriphenylenyl, benzochrysenyl, anthracenyl, stilbenyl, pyrenyl, etc., and "heteroaryl" means at least one As a C 3-30 aromatic ring containing a hetero atom, for example, pyrrolyl, pyrazinyl, pyridinyl, indolyl, isoindolyl, furyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, Benzothiophenyl, dibenzothiophenyl, quinolyl group, isoquinolyl, quinoxalinyl, carbazolyl, phenanthridinyl, acridinyl, phenanthrolinyl, thienyl, and pyridine ring, pyrazine ring, pyrimidine ring , pyridazine ring, triazine ring, indole ring, quinoline ring, acridine ring, pyrrolidine ring, dioxane ring, piperidine ring, morpholine ring, piperazine ring, carbazole ring, furan ring, thio Ofene ring, oxazole ring, oxadiazole ring, benzooxazole ring, thiazole ring, thiadiazole ring, benzothiazole ring, triazole ring, imidazole ring, benzoimidazole ring, pyran ring, dibenzofuran It may mean including a heterocyclic group formed from a ring.

본원 명세서 전체에서 용어 "치환될 수 있는"은 중수소, 할로겐, 아미노기, 니트릴기, 니트로기 또는 C1~C20의 알킬기, C2~C20의 알케닐기, C1~C20의 알콕시기, C3~C20의 시클로 알킬기, C3~C20의 헤테로시클로알킬기, C6~C30의 아릴기 및 C3~C30의 헤테로아릴기로 이루어진 군으로부터 선택된 하나 이상의 기로 치환될 수 있는 것을 의미할 수 있다. 또한, 본원 명세서 전체에서 동일한 기호는 특별히 언급하지 않는 한 같은 의미를 가질 수 있다.Throughout the specification, the term "which may be substituted" refers to deuterium, halogen, amino group, nitrile group, nitro group, or C 1 ~ C 20 alkyl group, C 2 ~ C 20 alkenyl group, C 1 ~ C 20 alkoxy group, C 3 ~ C 20 cycloalkyl group, C 3 ~ C 20 heterocycloalkyl group, C 6 ~ C 30 aryl group and C 3 ~ C 30 means that can be substituted with one or more groups selected from the group consisting of a heteroaryl group can do. In addition, the same symbol throughout the present specification may have the same meaning unless otherwise specified.

본원의 제1 측면은 하기 화학식 1로서 표시되는 화합물을 제공한다:A first aspect of the present application provides a compound represented by Formula 1 below:

[화학식 1][Formula 1]

Figure 112017057734110-pat00002
Figure 112017057734110-pat00002

상기 화학식 1에서,In Formula 1,

X는 O, S, 또는 CR1R2이고, R1및 R2는 각각 독립적으로 치환 또는 비치환의 C1~C30의 알킬기 또는 치환 또는 비치환의 C6~C30의 아릴기이며,X is O, S, or CR 1 R 2 , R 1 and R 2 are each independently a substituted or unsubstituted C 1 to C 30 alkyl group or a substituted or unsubstituted C 6 to C 30 aryl group,

Ar1은 치환 또는 비치환의 C6~C30의 아릴기 또는 치환 또는 비치환의 C3~C30의 헤테로아릴기이고,Ar 1 is a substituted or unsubstituted C 6 ~ C 30 aryl group or a substituted or unsubstituted C 3 ~ C 30 heteroaryl group;

L은 직접 결합, 또는 치환 또는 비치환의 C6~C18아릴렌기이다.L is a direct bond or a substituted or unsubstituted C 6 -C 18 arylene group.

Ar2및 Ar3은 각각 독립적으로 치환 또는 비치환의 C6~C30의 아릴기 또는 치환 또는 비치환의 C3~C30의 헤테로아릴기이고(단, Ar1,Ar2및 Ar3은 트리페닐렌기는 아니다)Ar 2 and Ar 3 are each independently a substituted or unsubstituted C 6 ~ C 30 aryl group or a substituted or unsubstituted C 3 ~ C 30 heteroaryl group (provided that Ar 1 , Ar 2 and Ar 3 are triphenyl not Rengi)

H는 수소이다.H is hydrogen.

본 발명의 일 구현예에 따른 상기 화학식 1의 화합물은 카바졸의 6번 위치에 다이벤조퓨란, 다이벤조싸이오펜, 또는 플루오렌이 결합되고, 카바졸의 3번 위치에 아릴아민이 결합되어 있다. In the compound of Formula 1 according to an embodiment of the present invention, dibenzofuran, dibenzothiophene, or fluorene is bonded to the 6-position of carbazole, and arylamine is bonded to the 3-position of carbazole. .

본 발명에 따른 화합물은 화학식 1의 구조를 가짐으로써 정공주입 및 정공수송이 용이한 HOMO 에너지 레벨로 조절할 수 있어 낮은 구동전압을 가질 수 있다. Since the compound according to the present invention has the structure of Chemical Formula 1, it can be adjusted to a HOMO energy level that facilitates hole injection and hole transport, and thus can have a low driving voltage.

또한, 본 발명의 일 구현예에 따른 화합물은 카바졸과 다이벤조퓨란, 다이벤조싸이오펜 또는 플루오렌이 결합되어 있어, 높은 삼중항 에너지를 유지할 수 있어 인광소자에 적용할 수 있으며, 고효율을 달성할 수 있다.In addition, since the compound according to one embodiment of the present invention is a combination of carbazole and dibenzofuran, dibenzothiophene or fluorene, it can maintain high triplet energy and can be applied to a phosphorescent device, achieving high efficiency can do.

또한, 본 발명의 일 구현예에 따른 화합물은 홀 모빌리티(hole mobility)가 증대되어 롤-오프(roll-off) 현상을 억제하여 고효율 및 장수명을 달성할 수 있다. In addition, the compound according to one embodiment of the present invention can achieve high efficiency and long lifespan by suppressing a roll-off phenomenon by increasing hole mobility.

또한, 높은 유리전이온도를 가져 박막 재결정화를 방지할 수 있고, 이에 따라 열 안정성이 증가되고, 구동 안정성을 확보할 수 있다.In addition, recrystallization of the thin film can be prevented by having a high glass transition temperature, and thus thermal stability is increased and driving stability can be secured.

또한, 본 발명의 일 구현예에서, 상기 X는 CR1R2이고, R1및 R2는 각각 독립적으로 메틸 또는 페닐일 수 있다. 이러한 경우 결정화도를 낮춰서 소자의 수명을 증가시킬 수 있다.Also, in one embodiment of the present invention, X is CR 1 R 2 , and R 1 and R 2 may each independently be methyl or phenyl. In this case, the lifetime of the device can be increased by lowering the crystallinity.

또한, 본 발명의 일 구현예에서, 상기 X는 O 또는 S일 수 있다. 이러한 경우 결정화도를 낮춰서 소자의 수명을 증가시킬 수 있다.Also, in one embodiment of the present invention, the X may be O or S. In this case, the lifetime of the device can be increased by lowering the crystallinity.

또한, 본 발명의 일 구현예에서, 상기 L은 치환 또는 비치환된 C6~12인 아릴렌일 수 있다. 이러한 경우 HOMO 에너지 레벨이 보다 깊어질 수 있고, 이에 따라 발광보조층에 적합한 HOMO 에너지 레벨을 가질 수 있다.In addition, in one embodiment of the present invention, the L may be a substituted or unsubstituted C 6 ~ 12 arylene. In this case, the HOMO energy level may be deeper, and accordingly, the HOMO energy level suitable for the light emitting auxiliary layer may be obtained.

또한, 본 발명의 일 구현예에서, 상기 Ar1,Ar2,및 Ar3은 각각 독립적으로 치환 또는 비치환의 C6~C15의 아릴기 또는 치환 또는 비치환의 C3~C18의 헤테로아릴기일 수 있다.Further, in one embodiment of the present invention, Ar 1 , Ar 2 , and Ar 3 are each independently a substituted or unsubstituted C 6 ~ C 15 aryl group or a substituted or unsubstituted C 3 ~ C 18 heteroaryl group. can

또한, 본 발명의 일 구현예에서, 상기 Ar1은 페닐, 비페닐, 터페닐, 또는 나프틸이고, Ar2,및 Ar3는 각각 독립적으로 페닐, 비페닐, 터페닐 또는 플루오렌일 수 있다.Further, in one embodiment of the present invention, Ar 1 is phenyl, biphenyl, terphenyl, or naphthyl, and Ar 2 and Ar 3 may each independently be phenyl, biphenyl, terphenyl, or fluorene. .

또한, 본 발명의 일 구현예에서, 상기 화합물은 하기 화학식 2 내지 5 중 어느 하나로 표시될 수 있다.In addition, in one embodiment of the present invention, the compound may be represented by any one of Formulas 2 to 5 below.

[화학식 2] [Formula 2]

Figure 112017057734110-pat00003
Figure 112017057734110-pat00003

[화학식 3][Formula 3]

Figure 112017057734110-pat00004
Figure 112017057734110-pat00004

[화학식 4][Formula 4]

Figure 112017057734110-pat00005
Figure 112017057734110-pat00005

[화학식 5][Formula 5]

Figure 112017057734110-pat00006
Figure 112017057734110-pat00006

상기 화학식 2 내지 5에서,In Formulas 2 to 5,

L’은 직접결합 또는 페닐렌이다. 이러한 경우 HOMO 에너지 레벨이 조금 더 깊어질 수 있다.L' is a direct bond or phenylene. In this case, the HOMO energy level can go a little deeper.

상기 화학식 2 내지 5로 표시되는 화합물은 900이하의 분자량을 가질 수 있어 낮은 증착온도를 형성할 수 있다.The compounds represented by Chemical Formulas 2 to 5 may have a molecular weight of 900 or less, so that a low deposition temperature may be formed.

또한, L’을 직접결합 또는 페닐렌으로 선택하는 것과 Ar2 또는 Ar3에 플루오렌의 존재 여부에 따라 HOMO 에너지 레벨을 변화시킬 수 있고, 이에 따라 발광보조층, 또는 정공수송층 등으로 그 적용을 선택할 수 있다. 보다 구체적으로, L’이 직접결합이면 정공수송층, L’이 페닐렌이고, Ar2 또는 Ar3가 플루오렌이고, N과의 결합위치가 2번인 경우 정공수송층, L’이 페닐렌이고, Ar2 또는 Ar3가 바이페닐이거나 플루오렌이고, N과의 결합위치가 4번인 경우 발광보조층에 적절한 HOMO 에너지 레벨을 가질 수 있다.In addition, L' is selected as a direct bond or phenylene and Ar 2 Alternatively, the HOMO energy level may be changed depending on the presence or absence of fluorene in Ar 3 , and accordingly, the application may be selected as a light emitting auxiliary layer or a hole transport layer. More specifically, when L' is a direct bond, a hole transport layer, L' is phenylene, and Ar 2 Or, when Ar 3 is fluorene, and the bonding position with N is 2, the hole transport layer, L' is phenylene, and Ar 2 Alternatively, when Ar 3 is biphenyl or fluorene, and the bonding position with N is 4, it may have an appropriate HOMO energy level for the light emitting auxiliary layer.

또한, 화학식 2, 화학식 4, 또는 화학식 5로 표시되는 화합물은 플루오렌의 2번, 다이벤조퓨란 또는 다이벤조싸이오펜의 4번을 연결위치로 하여 카바졸과의 입체각이 상대적으로 작은 값을 갖게 되어 박막형성시 빠른 모빌리티(mobility)를 가질 수 있다.In addition, the compound represented by Formula 2, Formula 4, or Formula 5 has a relatively small solid angle with carbazole by connecting No. 2 of fluorene and No. 4 of dibenzofuran or dibenzothiophene as a connection position. It can have fast mobility (mobility) when forming a thin film.

또한, 화학식 3으로 표시되는 화합물은 플루오렌의 4번을 연결위치로 하여 카바졸과의 입체각이 큰 값을 갖게 되어, 보다 커진 벌크함으로 인하여 소자의 수명을 증대시킬 수 있다.In addition, the compound represented by Chemical Formula 3 has a large value of solid angle with carbazole by connecting fluorene number 4, thereby increasing the lifespan of the device due to its increased bulk.

본 발명의 일 구현예에 따르면, 상기 화학식 2 내지 5로 표시되는 화합물은 하기와 같이 구체화될 수 있으며, 이에 제한되지 않을 수 있다.According to one embodiment of the present invention, the compounds represented by Chemical Formulas 2 to 5 may be specified as follows, but may not be limited thereto.

Figure 112017057734110-pat00007
Figure 112017057734110-pat00007

Figure 112017057734110-pat00008
Figure 112017057734110-pat00008

Figure 112017057734110-pat00009
Figure 112017057734110-pat00009

Figure 112017057734110-pat00010
Figure 112017057734110-pat00010

본 발명의 일 구현예에 있어서, 상기 화학식 1로 표시되는 화합물은 하기에 제시된 1 내지 577번 중 어느 하나의 화합물일 수 있으며, 이에 제한되지 않을 수 있다:In one embodiment of the present invention, the compound represented by Formula 1 may be any one of the compounds 1 to 577 shown below, but may not be limited thereto:

Figure 112017057734110-pat00011
Figure 112017057734110-pat00011

Figure 112017057734110-pat00012
Figure 112017057734110-pat00012

Figure 112017057734110-pat00013
Figure 112017057734110-pat00013

Figure 112017057734110-pat00014
Figure 112017057734110-pat00014

Figure 112017057734110-pat00015
Figure 112017057734110-pat00015

Figure 112017057734110-pat00016
Figure 112017057734110-pat00016

Figure 112017057734110-pat00017
Figure 112017057734110-pat00017

Figure 112017057734110-pat00018
Figure 112017057734110-pat00018

Figure 112017057734110-pat00019
Figure 112017057734110-pat00019

Figure 112017057734110-pat00020
Figure 112017057734110-pat00020

Figure 112017057734110-pat00021
Figure 112017057734110-pat00021

Figure 112017057734110-pat00022
Figure 112017057734110-pat00022

Figure 112017057734110-pat00023
Figure 112017057734110-pat00023

Figure 112017057734110-pat00024
Figure 112017057734110-pat00024

Figure 112017057734110-pat00025
Figure 112017057734110-pat00025

Figure 112017057734110-pat00026
Figure 112017057734110-pat00026

Figure 112017057734110-pat00027
Figure 112017057734110-pat00027

Figure 112017057734110-pat00028
Figure 112017057734110-pat00028

Figure 112017057734110-pat00029
Figure 112017057734110-pat00029

Figure 112017057734110-pat00030
Figure 112017057734110-pat00030

Figure 112017057734110-pat00031
Figure 112017057734110-pat00031

Figure 112017057734110-pat00032
Figure 112017057734110-pat00032

Figure 112017057734110-pat00033
Figure 112017057734110-pat00033

Figure 112017057734110-pat00034
Figure 112017057734110-pat00034

Figure 112017057734110-pat00035
Figure 112017057734110-pat00035

Figure 112017057734110-pat00036
Figure 112017057734110-pat00037
Figure 112017057734110-pat00036
Figure 112017057734110-pat00037

본원의 제2 측면은 상기 화학식 1 내지 5 중 어느 하나로 표시되는 화합물을 포함하는 유기 발광 소자를 제공한다. 상기 유기 발광 소자는 제1 전극 및 제2 전극 사이에 본원에 따른 화합물을 함유하는 유기물층을 1층 이상 포함할 수 있다.A second aspect of the present application provides an organic light emitting device including a compound represented by any one of Chemical Formulas 1 to 5. The organic light emitting device may include one or more organic material layers containing the compound according to the present disclosure between the first electrode and the second electrode.

본 발명의 일 구현예에 있어서, 상기 유기물층은 정공 주입층, 정공 수송층 및 발광 보조층 일 수 있으나, 이에 제한되지 않을 수 있다. 또한, 본 발명의 화합물은 유기층을 형성할 때 단독으로 사용되거나 공지의 화합물과 함께 사용될 수 있다.In one embodiment of the present invention, the organic material layer may be a hole injection layer, a hole transport layer and a light emitting auxiliary layer, but may not be limited thereto. In addition, the compound of the present invention may be used alone or in combination with known compounds when forming an organic layer.

본 발명의 일 구현예에 있어서, 상기 유기 발광 소자는 정공수송물질을 함유하는 유기물층 및 상기 화학식 1로 표시되는 화합물을 함유하는 유기물층을 포함할 수 있으나, 이에 제한되지 않을 수 있다. 본 발명의 일 구현예에 따르면, 상술한 바와 같이, 상기 화학식 1의 화합물은 화학식 2 내지 5 중 어느 하나로 표시될 수 있다.In one embodiment of the present invention, the organic light emitting device may include an organic material layer containing a hole transport material and an organic material layer containing a compound represented by Formula 1, but may not be limited thereto. According to one embodiment of the present invention, as described above, the compound of Formula 1 may be represented by any one of Formulas 2 to 5.

상기 유기 발광 소자는 애노드(anode)와 캐소드(cathod) 사이에 정공주입층(HIL), 정공수송층(HTL), 발광층(EML), 전자수송층(ETL), 전자주입층(EIL) 등의 유기물층을 1층 이상 포함할 수 있다.The organic light emitting device includes an organic material layer such as a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) between an anode and a cathode. May contain more than one floor.

예를 들어, 상기 유기 발광 소자는 도 1에 기재된 구조와 같이 제조될 수 있다. 유기 발광 소자는 아래로부터 애노드(정공주입전극(1000))/정공주입층(200)/정공수송층(300)/발광층(400)/전자수송층(500)/전자주입층(600)/캐소드(전자주입전극(2000)) 순으로 적층될 수 있다.For example, the organic light emitting device may be manufactured as shown in FIG. 1 . The organic light emitting element is composed of anode (hole injection electrode 1000) / hole injection layer 200 / hole transport layer 300 / light emitting layer 400 / electron transport layer 500 / electron injection layer 600 / cathode (electron injection layer 600) from the bottom The injection electrode 2000) may be stacked in order.

도 1에서 기판(100)은 유기 발광 소자에서 사용되는 기판을 사용할 수 있으며, 특히 기계적 강도, 열적 안정성, 투명성, 표면 평활성, 취급 용이성, 및 방수성이 우수한 투명한 유리 기판 또는 플렉시블이 가능한 플라스틱 기판일 수 있다.In FIG. 1 , a substrate used in an organic light emitting device may be used as the substrate 100, and in particular, a transparent glass substrate excellent in mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness, or a flexible plastic substrate may be used. there is.

정공주입전극(1000)은 유기 발광 소자의 정공 주입을 위한 애노드로 사용된다. 정공의 주입이 가능하도록 낮은 일함수를 갖는 물질을 이용하며, 인듐틴옥사이드(ITO), 인듐징크옥사이드(IZO), 그래핀(graphene)과 같은 투명한 재질로 형성될 수 있다.The hole injection electrode 1000 is used as an anode for hole injection of an organic light emitting device. A material having a low work function is used to enable injection of holes, and it may be formed of a transparent material such as indium tin oxide (ITO), indium zinc oxide (IZO), or graphene.

상기 애노드 전극 상부에 정공주입층 물질을 진공증착법, 스핀코팅법, 캐스트법, LB(Langmuir-Blodgett)법 등과 같은 방법에 의해 증착하여 정공주입층(200)을 형성할 수 있다. 상기 진공증착법에 의해 정공주입층을 형성하는 경우 그 증착조건은 정공주입층(200)의 재료로서 사용하는 화합물, 목적하는 정공주입층의 구조 및 열적특성 등에 따라 다르지만, 일반적으로 50-500 의 증착온도, 10- 8내지 10- 3torr의 진공도, 0.01 내지 100 Å/sec의 증착속도, 10 Å 내지 5 ㎛의 층 두께 범위에서 적절히 선택할 수 있다. The hole injection layer 200 may be formed by depositing a hole injection layer material on the anode electrode by a method such as a vacuum deposition method, a spin coating method, a cast method, a Langmuir-Blodgett (LB) method, or the like. When the hole injection layer is formed by the vacuum deposition method, the deposition conditions vary depending on the compound used as the material of the hole injection layer 200, the desired structure and thermal characteristics of the hole injection layer, etc., but generally 50-500 The temperature, the degree of vacuum of 10 - 8 to 10 - 3 torr, the deposition rate of 0.01 to 100 Å/sec, and the layer thickness range of 10 Å to 5 μm can be appropriately selected.

다음으로 상기 정공주입층(200) 상부에 정공수송층 물질을 진공증착법, 스핀코팅법, 캐스트법, LB법 등과 같은 방법에 의해 증착하여 정공수송층(300)을 형성할 수 있다. 상기 진공증착법에 의해 정공수송층을 형성하는 경우 그 증착조건은 사용하는 화합물에 따라 다르지만 일반적으로 정공주입층의 형성과 거의 동일한 조건 범위에서 선택하는 것이 좋다.Next, the hole transport layer 300 may be formed by depositing a hole transport layer material on the hole injection layer 200 by a method such as a vacuum deposition method, a spin coating method, a cast method, or an LB method. In the case of forming the hole transport layer by the vacuum deposition method, the deposition conditions vary depending on the compound used, but are generally selected within the same range of conditions as those for forming the hole injection layer.

상기 정공수송층(300)은 본 발명에 따른 화합물을 사용할 수 있으며, 상술한 바와 같이, 본 발명에 따른 화합물을 단독으로 사용하거나 공지의 화합물을 함께 사용할 수 있다. 또한, 본 발명의 일 구현예에 따르면 정공수송층(300)은 1층 이상일 수 있으며, 공지의 물질로만 형성된 정공수송층을 함께 포함할 수 있다. 또한, 본 발명의 일 구현예에 따르면 상기 정공수송층(300) 상에 발광보조층을 형성할 수 있다.The hole transport layer 300 may use the compound according to the present invention, and as described above, the compound according to the present invention may be used alone or a known compound may be used together. In addition, according to one embodiment of the present invention, the hole transport layer 300 may have one or more layers, and may include a hole transport layer formed of only known materials. In addition, according to one embodiment of the present invention, an auxiliary light emitting layer may be formed on the hole transport layer 300 .

상기 정공수송층(300) 또는 발광보조층 상부에 발광층 물질을 진공증착법, 스핀코팅법, 캐스트법, LB법 등과 같은 방법에 의해 증착하여 발광층(400)을 형성할 수 있다. 상기 진공증착법에 의해 발광층을 형성하는 경우 그 증착조건은 사용하는 화합물에 따라 다르지만 일반적으로 정공주입층의 형성과 거의 동일한 조건 범위에서 선택하는 것이 좋다. 또한, 상기 발광층 재료는 공지의 화합물을 호스트 또는 도펀트로 사용할 수 있다.The light emitting layer 400 may be formed by depositing a material for the light emitting layer on the hole transport layer 300 or the light emitting auxiliary layer by a method such as a vacuum deposition method, a spin coating method, a cast method, or an LB method. In the case of forming the light emitting layer by the vacuum deposition method, the deposition conditions vary depending on the compound used, but it is generally preferable to select them within the same range of conditions as those for forming the hole injection layer. In addition, a known compound may be used as a host or dopant for the light emitting layer material.

또한, 발광층에 인광 도펀트와 함께 사용할 경우에는 삼중항 여기자 또는 정공이 전자수송층으로 확산되는 현상을 방지하기 위하여 정공억제재료(HBL)를 추가로 진공증착법 또는 스핀코팅법에 의해 적층시킬 수 있다. 이때 사용할 수 있는 정공억제물질은 특별히 제한되지는 않으나, 정공억제재료로 사용되고 있는 공지의 것에서 임의의 것을 선택해서 이용할 수 있다. 예를 들면, 옥사디아졸 유도체나 트리아졸 유도체, 페난트롤린 유도체, 또는 일본특개평 11-329734(A1)에 기재되어 있는 정공억제재료 등을 들 수 있으며, 대표적으로 Balq(비스(8-하이드록시-2-메틸퀴놀리놀나토)-알루미늄 비페녹사이드), 페난트롤린(phenanthrolines)계 화합물(예: UDC사 BCP(바쏘쿠프로인)) 등을 사용할 수 있다.In addition, when used with a phosphorescent dopant in the light emitting layer, a hole blocking material (HBL) may be additionally laminated by vacuum deposition or spin coating to prevent diffusion of triplet excitons or holes into the electron transport layer. The hole blocking material that can be used at this time is not particularly limited, but can be selected and used arbitrarily from known ones used as hole blocking materials. For example, an oxadiazole derivative, a triazole derivative, a phenanthroline derivative, or a hole blocking material described in Japanese Patent Laid-Open No. 11-329734 (A1) may be mentioned, and typically Balq (bis(8-hydroxy) oxy-2-methylquinolinato)-aluminum biphenoxide), phenanthrolines-based compounds (eg UDC BCP (vasocuproin)), and the like can be used.

상기와 같이 형성된 발광층(400) 상부에는 전자수송층(500)이 형성되는데, 이때 상기 전자수송층은 진공증착법, 스핀코팅법, 캐스트법 등의 방법으로 형성할 수 있다. 또한, 상기 전자수송층의 증착조건은 사용하는 화합물에 따라 다르지만, 일반적으로 정공주입층의 형성과 거의 동일한 조건 범위에서 선택하는 것이 좋다.An electron transport layer 500 is formed on the light emitting layer 400 formed as described above. At this time, the electron transport layer can be formed by a method such as a vacuum deposition method, a spin coating method, a cast method, or the like. In addition, although the deposition conditions of the electron transport layer vary depending on the compound used, it is generally preferable to select them within the same range of conditions as those for forming the hole injection layer.

그 뒤, 상기 전자수송층(500) 상부에 전자주입층 물질을 증착하여 전자주입층(600)을 형성할 수 있으며, 이때 상기 전자수송층은 통상의 전자주입층 물질을 진공증착법, 스핀코팅법, 캐스트법 등의 방법으로 형성할 수 있다. Thereafter, an electron injection layer material may be deposited on the electron transport layer 500 to form an electron injection layer 600. It can be formed by methods such as law.

상기 유기발광 소자의 정공주입층(200), 정공수송층(300), 발광층(400), 전자수송층(500)는 본 발명에 따른 화합물을 사용하거나 아래와 같은 물질을 사용할 수 있으며, 또는 본 발명에 따른 화합물과 공지의 물질을 함께 사용할 수 있다.The hole injection layer 200, the hole transport layer 300, the light emitting layer 400, and the electron transport layer 500 of the organic light emitting device may use the compound according to the present invention or the following materials, or according to the present invention A compound and a known substance can be used together.

Figure 112017057734110-pat00038
Figure 112017057734110-pat00038

전자주입층(600) 위에 전자 주입을 위한 캐소드(2000)을 진공증착법이나 스퍼터링법 등의 방법에 의해 형성한다. 캐소드로는 다양한 금속이 사용될 수 있다. 구체적인 예로 알루미늄, 금, 은 등의 물질이 있다.A cathode 2000 for electron injection is formed on the electron injection layer 600 by a method such as vacuum deposition or sputtering. Various metals may be used as the cathode. Specific examples include materials such as aluminum, gold, and silver.

본 발명의 유기발광소자는 애노드, 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층, 캐소드 구조의 유기 발광 소자뿐만 아니라, 다양한 구조의 유기발광소자의 구조가 가능하며, 필요에 따라 1층 또는 2층의 중간층을 더 형성하는 것도 가능하다.The organic light emitting device of the present invention can have a structure of various organic light emitting devices as well as an organic light emitting device having an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode structure. It is also possible to further form a layer or two intermediate layers.

상기와 같이 본 발명에 따라 형성되는 각 유기물층의 두께는 요구되는 정도에 따라 조절할 수 있으며, 구체적으로는 10 내지 1,000 ㎚이며, 더욱 구체적으로는 20 내지 150 ㎚일 수 있다.As described above, the thickness of each organic material layer formed according to the present invention may be adjusted according to a required degree, specifically, 10 to 1,000 nm, and more specifically, 20 to 150 nm.

또한 본 발명은 상기 화학식 1로 표시되는 화합물을 포함하는 유기물층은 유기물층의 두께를 분자 단위로 조절할 수 있기 때문에 표면이 균일하며, 형태안정성이 뛰어난 장점이 있다.In the present invention, since the thickness of the organic material layer including the compound represented by Chemical Formula 1 can be controlled in a molecular unit, the surface is uniform and the shape stability is excellent.

본 측면에 따른 유기 발광 화합물에 대하여 본원의 제1 측면에 대하여 기재된 내용이 모두 적용될 수 있으나, 이에 제한되지 않을 수 있다.All of the contents described in the first aspect of the present disclosure may be applied to the organic light emitting compound according to the present aspect, but may not be limited thereto.

이하, 본원의 실시예를 통하여 보다 구체적으로 설명하며, 본 실시예에 의하여 본원의 범위가 제한되는 것은 아니다.Hereinafter, it will be described in more detail through examples of the present application, and the scope of the present application is not limited by the present examples.

[실시예][Example]

중간체 합성intermediate synthesis

목적 화합물 합성을 위해 중간체 I-1를 하기와 같이 합성하고, 합성된 중간체를 하기 표 1에 나타내었다.To synthesize the target compound, intermediate I-1 was synthesized as follows, and the synthesized intermediates are shown in Table 1 below.

제조예1Preparation Example 1 :: 중간체 (I-1) 합성Intermediate (I-1) synthesis

Figure 112017057734110-pat00039
Figure 112017057734110-pat00039

아르곤 또는 질소 분위기 하에서, dibenzo[b,d]furan-4-ylboronic acid 42.5g (200mM), 3,6-diiodo-9-phenyl-9H-carbazole 149g (300mM), tetrakis(triphenylphosphine)palladium(0) 4.7g (4mM)에 toluene 600ml, 2M 농도의 Na2CO3수용액 300ml를 가하고, 10시간 환류시키면서 가열하였다. 반응 종료 후, dichloromethane으로 추출하고 MgSO4를 넣고 필터하였다. 필터링된 유기층의 용매를 제거한 후 컬럼 크로마토그래피로 정제하여 중간체 I-1 (3-(dibenzo[b,d]furan-4-yl)-6-iodo-9-phenyl-9H-carbazole) 75g을 얻었다.Under argon or nitrogen atmosphere, dibenzo[b,d]furan-4-ylboronic acid 42.5g (200mM), 3,6-diiodo-9-phenyl-9H-carbazole 149g (300mM), tetrakis(triphenylphosphine)palladium(0) 600ml of toluene and 300ml of 2M Na 2 CO 3 aqueous solution were added to 4.7g (4mM), and the mixture was heated under reflux for 10 hours. After completion of the reaction, extraction with dichloromethane and MgSO 4 was added and filtered. After removing the solvent from the filtered organic layer, it was purified by column chromatography to obtain 75 g of intermediate I-1 (3-(dibenzo[b,d]furan-4-yl)-6-iodo-9-phenyl-9H-carbazole). .

제조예2: 중간체(I-2) 합성Preparation Example 2: Synthesis of Intermediate (I-2)

dibenzo[b,d]furan-4-ylboronic acid 42.5g 대신 dibenzo[b,d]thiophen-4-ylboronic acid 45.6g 사용한 것 이외에 제조예1과 동일하게 반응을 진행하여 중간체 I-2 (3-(dibenzo[b,d]thiophen-4-yl)-6-iodo-9-phenyl-9H-carbazole) 71.7g을 얻었다. Intermediate I-2 (3-( 71.7 g of dibenzo[b,d]thiophen-4-yl)-6-iodo-9-phenyl-9H-carbazole) was obtained.

제조예3: 중간체(I-3) 합성Preparation Example 3: Synthesis of Intermediate (I-3)

dibenzo[b,d]furan-4-ylboronic acid 42.5g 대신 (9,9-dimethyl-9H-fluoren-2-yl)boronic acid 47.7g 사용한 것 이외에 제조예1과 동일하게 반응을 진행하여 중간체 I-3 (3-(9,9-dimethyl-9H-fluoren-2-yl)-6-iodo-9-phenyl-9H-carbazole) 84.3g을 얻었다.Intermediate I- 84.3 g of 3 (3-(9,9-dimethyl-9H-fluoren-2-yl)-6-iodo-9-phenyl-9H-carbazole) was obtained.

제조예4: 중간체(I-4) 합성Preparation Example 4: Synthesis of Intermediate (I-4)

dibenzo[b,d]furan-4-ylboronic acid 42.5g 대신 (9,9-dimethyl-9H-fluoren-4-yl)boronic acid 47.7g 사용한 것 이외에 제조예1과 동일하게 반응을 진행하여 중간체 I-4 (3-(9,9-dimethyl-9H-fluoren-4-yl)-6-iodo-9-phenyl-9H-carbazole) 80.9g을 얻었다. Intermediate I- 80.9 g of 4 (3-(9,9-dimethyl-9H-fluoren-4-yl)-6-iodo-9-phenyl-9H-carbazole) was obtained.

제조예5Preparation Example 5 : 중간체(I-5) 합성: Intermediate (I-5) synthesis

Figure 112017057734110-pat00040
Figure 112017057734110-pat00040

아르곤 또는 질소 분위기 하에서, I-1 53.6g (100mM), 4-bromophenylboronic acid 40.2g (200mM), tetrakis(triphenylphosphine)palladium(0) 2.4g (2mM)에 toluene 400ml, 2M 농도의 Na2CO3수용액 200ml를 가하고, 8시간 환류시키면서 가열하였다. 반응 종료 후, dichloromethane으로 추출하고 MgSO4를 넣고 필터하였다. 필터링된 유기층의 용매를 제거한 후 컬럼 크로마토그래피로 정제하여 중간체 I-5 (3-(4-bromophenyl)-6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazole) 45.2g을 얻었다. Under argon or nitrogen atmosphere, 53.6g (100mM) of I-1, 40.2g (200mM) of 4-bromophenylboronic acid, 2.4g (2mM) of tetrakis(triphenylphosphine)palladium(0), 400ml of toluene, 2M Na 2 CO 3 aqueous solution 200 ml was added and heated under reflux for 8 hours. After completion of the reaction, extraction with dichloromethane and MgSO 4 was added and filtered. After removing the solvent from the filtered organic layer, the intermediate I-5 (3-(4-bromophenyl)-6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazole was purified by column chromatography. ) to obtain 45.2 g.

제조예6: 중간체(I-6) 합성Preparation Example 6: Synthesis of Intermediate (I-6)

I-1 53.6g 대신 I-3 56.2g 사용한 것 이외에 제조예5와 동일하게 반응을 진행하여 중간체 I-6 (3-(4-bromophenyl)-6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazole) 50.2g을 얻었다. Intermediate I-6 (3-(4-bromophenyl)-6-(9,9-dimethyl-9H-fluoren- 2-yl) -9-phenyl-9H-carbazole) 50.2 g was obtained.

제조예7: 중간체(I-7) 합성Preparation Example 7: Synthesis of Intermediate (I-7)

I-1 53.6g 대신 I-4 56.2g 사용한 것 이외에 제조예5와 동일하게 반응을 진행하여 중간체 I-7 (3-(4-bromophenyl)-6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazole) 49.1g을 얻었다. Intermediate I-7 (3-(4-bromophenyl)-6-(9,9-dimethyl-9H-fluoren- 4-yl) -9-phenyl-9H-carbazole) 49.1 g was obtained.

제조예8: 중간체(I-8) 합성Preparation Example 8: Synthesis of Intermediate (I-8)

4-bromophenylboronic acid 40.2g 대신 (4'-bromo-[1,1'-biphenyl]-4-yl)boronic acid 55.4g 사용한 것 이외에 제조예5와 동일하게 반응을 진행하여 중간체 I-8 (3-(4'-bromo-[1,1'-biphenyl]-4-yl)-6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazole) 51.9g을 얻었다. Intermediate I-8 (3- 51.9 g of (4'-bromo-[1,1'-biphenyl]-4-yl)-6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazole) was obtained.

제조예9: 중간체(I-9) 합성Preparation Example 9: Synthesis of Intermediate (I-9)

I-1 53.6g 대신 I-2 55.2g 사용하고, 4-bromophenylboronic acid 40.2g 대신 (4'-bromo-[1,1'-biphenyl]-4-yl)boronic acid 55.4g 사용한 것 이외에 제조예5와 동일하게 반응을 진행하여 중간체 I-9 (3-(4'-bromo-[1,1'-biphenyl]-4-yl)-6-(dibenzo[b,d]thiophen-4-yl)-9-phenyl-9H-carbazole) 51.9g을 얻었다.Preparation Example 5 in addition to using 55.2 g of I-2 instead of 53.6 g of I-1 and using 55.4 g of (4'-bromo-[1,1'-biphenyl]-4-yl)boronic acid instead of 40.2 g of 4-bromophenylboronic acid The reaction was carried out in the same manner as in Intermediate I-9 (3-(4'-bromo-[1,1'-biphenyl]-4-yl)-6-(dibenzo[b,d]thiophen-4-yl)- 9-phenyl-9H-carbazole) 51.9 g was obtained.

제조예10: 중간체(I-10) 합성Preparation Example 10: Synthesis of Intermediate (I-10)

I-1 53.6g 대신 I-3 56.2g 사용하고, 4-bromophenylboronic acid 40.2g 대신 (4'-bromo-[1,1'-biphenyl]-4-yl)boronic acid 55.4g 사용한 것 이외에 제조예5와 동일하게 반응을 진행하여 중간체 I-10 (3-(4'-bromo-[1,1'-biphenyl]-4-yl)-6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazole) 55.4g을 얻었다. Preparation Example 5 in addition to using 56.2 g of I-3 instead of 53.6 g of I-1 and using 55.4 g of (4'-bromo-[1,1'-biphenyl]-4-yl)boronic acid instead of 40.2 g of 4-bromophenylboronic acid The reaction was carried out in the same manner as in Intermediate I-10 (3-(4'-bromo-[1,1'-biphenyl]-4-yl)-6-(9,9-dimethyl-9H-fluoren-2-yl )-9-phenyl-9H-carbazole) 55.4 g was obtained.

제조예11: 중간체(I-11) 합성Preparation Example 11: Synthesis of Intermediate (I-11)

I-1 53.6g 대신 I-4 56.2g 사용하고, 4-bromophenylboronic acid 40.2g 대신 (4'-bromo-[1,1'-biphenyl]-4-yl)boronic acid 55.4g 사용한 것 이외에 제조예5와 동일하게 반응을 진행하여 중간체 I-11 (3-(4'-bromo-[1,1'-biphenyl]-4-yl)-6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazole) 54.7g을 얻었다. Preparation Example 5 in addition to using 56.2 g of I-4 instead of 53.6 g of I-1 and using 55.4 g of (4'-bromo-[1,1'-biphenyl]-4-yl)boronic acid instead of 40.2 g of 4-bromophenylboronic acid The reaction was carried out in the same manner as in Intermediate I-11 (3-(4'-bromo-[1,1'-biphenyl]-4-yl)-6-(9,9-dimethyl-9H-fluoren-4-yl )-9-phenyl-9H-carbazole) 54.7 g was obtained.

중간체intermediate FD-MSFD-MS 수율(%)transference number(%) I-1I-1

Figure 112017057734110-pat00041
Figure 112017057734110-pat00041
m/z: 535.04 (100.0%), 536.05 (32.1%), 537.05 (2.9%), 537.05 (2.5%)m/z: 535.04 (100.0%), 536.05 (32.1%), 537.05 (2.9%), 537.05 (2.5%) 7070 I-2I-2
Figure 112017057734110-pat00042
Figure 112017057734110-pat00042
m/z: 551.02 (100.0%), 552.02 (32.1%), 553.02 (4.2%), 553.03 (2.9%), 553.03 (2.6%), 554.02 (1.9%)m/z: 551.02 (100.0%), 552.02 (32.1%), 553.02 (4.2%), 553.03 (2.9%), 553.03 (2.6%), 554.02 (1.9%) 6565
I-3I-3
Figure 112017057734110-pat00043
Figure 112017057734110-pat00043
m/z: 561.10 (100.0%), 562.10 (35.9%), 563.10 (3.4%), 563.10 (2.6%)m/z: 561.10 (100.0%), 562.10 (35.9%), 563.10 (3.4%), 563.10 (2.6%) 7575
I-4I-4
Figure 112017057734110-pat00044
Figure 112017057734110-pat00044
m/z: 561.10 (100.0%), 562.10 (35.4%), 563.10 (3.9%), 563.10 (2.5%)m/z: 561.10 (100.0%), 562.10 (35.4%), 563.10 (3.9%), 563.10 (2.5%) 7272
I-5I-5
Figure 112017057734110-pat00045
Figure 112017057734110-pat00045
m/z: 563.09 (100.0%), 565.09 (97.1%), 566.09 (37.7%), 564.09 (22.8%), 564.09 (16.3%), 567.09 (7.4%), 565.10 (4.7%), 565.10 (2.7%)m/z: 563.09 (100.0%), 565.09 (97.1%), 566.09 (37.7%), 564.09 (22.8%), 564.09 (16.3%), 567.09 (7.4%), 565.10 (4.7%), 565.10 (2.7%) ) 8080
I-6I-6
Figure 112017057734110-pat00046
Figure 112017057734110-pat00046
m/z: 589.14 (100.0%), 591.14 (97.2%), 590.14 (42.1%), 592.14 (41.2%), 593.15 (8.6%), 591.15 (5.0%), 591.15 (3.4%), 594.15 (1.2%)m/z: 589.14 (100.0%), 591.14 (97.2%), 590.14 (42.1%), 592.14 (41.2%), 593.15 (8.6%), 591.15 (5.0%), 591.15 (3.4%), 594.15 (1.2%) ) 8585
I-7I-7
Figure 112017057734110-pat00047
Figure 112017057734110-pat00047
m/z: 589.14 (100.0%), 591.14 (97.4%), 590.14 (42.3%), 592.14 (41.1%), 593.15 (8.5%), 591.15 (5.1%), 591.15 (3.2%), 594.15 (1.1%)m/z: 589.14 (100.0%), 591.14 (97.4%), 590.14 (42.3%), 592.14 (41.1%), 593.15 (8.5%), 591.15 (5.1%), 591.15 (3.2%), 594.15 (1.1%) ) 8383
I-8I-8
Figure 112017057734110-pat00048
Figure 112017057734110-pat00048
m/z: 639.12 (100.0%), 641.12 (97.5%), 640.12 (45.7%), 642.12 (44.3%), 643.12 (9.5%), 641.13 (5.2%), 641.13 (4.8%), 644.13 (0.9%)m/z: 639.12 (100.0%), 641.12 (97.5%), 640.12 (45.7%), 642.12 (44.3%), 643.12 (9.5%), 641.13 (5.2%), 641.13 (4.8%), 644.13 (0.9%) ) 8181
I-9I-9
Figure 112017057734110-pat00049
Figure 112017057734110-pat00049
m/z: 655.10 (100.0%), 657.09 (97.1%), 656.10 (45.7%), 658.10 (44.5%), 659.10 (9.9%), 657.10 (5.3%), 657.10 (5.1%), 657.09 (4.1%), 659.09 (4.2%), 658.10 (2.3%), 660.09 (2.0%), 658.11 (1.2%), 660.10 (1.0%)m/z: 655.10 (100.0%), 657.09 (97.1%), 656.10 (45.7%), 658.10 (44.5%), 659.10 (9.9%), 657.10 (5.3%), 657.10 (5.1%), 657.09 (4.1%) ), 659.09 (4.2%), 658.10 (2.3%), 660.09 (2.0%), 658.11 (1.2%), 660.10 (1.0%) 7979
I-10I-10
Figure 112017057734110-pat00050
Figure 112017057734110-pat00050
m/z: 665.17 (100.0%), 667.17 (97.6%), 666.18 (48.9%), 668.17 (47.6%), 669.18 (11.1%), 667.18 (6.1%), 667.18 (5.2%), 670.18 (1.1%)m/z: 665.17 (100.0%), 667.17 (97.6%), 666.18 (48.9%), 668.17 (47.6%), 669.18 (11.1%), 667.18 (6.1%), 667.18 (5.2%), 670.18 (1.1%) ) 8383
I-11I-11
Figure 112017057734110-pat00051
Figure 112017057734110-pat00051
m/z: 665.17 (100.0%), 667.17 (97.2%), 666.18 (48.4%), 668.17 (47.1%), 669.18 (11.2%), 667.18 (6.7%), 667.18 (5.4%), 670.18 (1.6%)m/z: 665.17 (100.0%), 667.17 (97.2%), 666.18 (48.4%), 668.17 (47.1%), 669.18 (11.2%), 667.18 (6.7%), 667.18 (5.4%), 670.18 (1.6%) ) 8282

화합물 합성compound synthesis

상기 중간체 I-1 내지 I-11을 사용하여 목적 화합물 1 내지 32를 합성하였고, 이의 결과를 하기 표 2 및 표 3에 나타내었다.Target compounds 1 to 32 were synthesized using the intermediates I-1 to I-11, and the results are shown in Tables 2 and 3 below.

합성예synthesis example 1: 화합물 S1 합성 1: Synthesis of Compound S1

Figure 112017057734110-pat00052
Figure 112017057734110-pat00052

아르곤 또는 질소 분위기 하에서, I-5 24.5g (50mM), 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g (100mM), Pd2(dba)31.6g(1.7mM),50%P(t-Bu)32ml(4mM),NaOt-Bu14.7g(152mM)에 toluene 300ml를 가하고, 15시간 환류 시키면서 가열했다. 반응 종료 후, 즉시 여과한 후, dichloromethane으로 추출하고 MgSO4를 넣고 필터하였다. 필터링된 유기층의 용매를 제거한 후 컬럼 크로마토그래피로 정제하여 화합물 S1 (N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-2-amine) 31.9g을 얻었다. Under argon or nitrogen atmosphere, I-5 24.5 g (50 mM), 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6 g (100 mM), Pd 2 (dba) 31.6 g (1.7 mM), Toluene 300ml was added to 50% P(t-Bu) 32ml (4mM), NaOt-Bu 14.7g (152mM), and heated while refluxing for 15 hours. After completion of the reaction, the mixture was filtered immediately, extracted with dichloromethane, and MgSO 4 was added thereto and filtered. After removing the solvent from the filtered organic layer, it was purified by column chromatography to obtain compound S1 (N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl ) phenyl) -9,9-dimethyl-N-phenyl-9H-fluoren-2-amine) 31.9 g was obtained.

합성예synthesis example 2: 화합물 S2 합성 2: Synthesis of Compound S2

9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g 대신 9,9-dimethyl-N-phenyl-9H-fluoren-4-amine 28.6g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S2 (N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-4-amine) 31.5g을 얻었다.The reaction was the same as in Synthesis Example 1 except that 28.6 g of 9,9-dimethyl-N-phenyl-9H-fluoren-4-amine was used instead of 28.6 g of 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine. Proceed to compound S2 (N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N- phenyl-9H-fluoren-4-amine) to obtain 31.5 g.

합성예synthesis example 3: 화합물 S3 합성 3: Synthesis of Compound S3

9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g 대신 N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-2-amine 36.2g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S3 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-amine) 34.7g을 얻었다. N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-2-amine instead of 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g Compound S3 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(dibenzo[b,d] 34.7 g of furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-amine) was obtained.

합성예synthesis example 4: 화합물 S4 합성 4: Synthesis of Compound S4

9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g 대신 N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-4-amine 36.2g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S4 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-4-amine) 35.1g을 얻었다. N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-4-amine instead of 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g Compound S4 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(dibenzo[b,d] 35.1 g of furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-4-amine) was obtained.

합성예synthesis example 5: 화합물 S5 합성 5: Synthesis of Compound S5

9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g 대신 N-phenyl-[1,1'-biphenyl]-4-amine 24.6g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S5 (N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-N-phenyl-[1,1'-biphenyl]-4-amine) 29.5g을 얻었다. The reaction was carried out in the same manner as in Synthesis Example 1 except that 24.6 g of N-phenyl-[1,1'-biphenyl]-4-amine was used instead of 28.6 g of 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine Compound S5 (N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-N-phenyl-[1,1' -biphenyl] -4-amine) to obtain 29.5 g.

합성예synthesis example 6: 화합물 S6 합성 6: Synthesis of Compound S6

9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g 대신 N-phenyl-[1,1'-biphenyl]-2-amine 24.6g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S6 (N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-N-phenyl-[1,1'-biphenyl]-2-amine) 29.9g을 얻었다. The reaction was carried out in the same manner as in Synthesis Example 1 except that 24.6 g of N-phenyl-[1,1'-biphenyl]-2-amine was used instead of 28.6 g of 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine Compound S6 (N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-N-phenyl-[1,1' -biphenyl] -2-amine) to obtain 29.9 g.

합성예synthesis example 7: 화합물 S7 합성 7: Synthesis of Compound S7

9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g 대신 di([1,1'-biphenyl]-4-yl)amine 32.2g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S7 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-4-amine) 33.4g을 얻었다. The reaction proceeds in the same manner as in Synthesis Example 1 except that 32.2 g of di([1,1'-biphenyl]-4-yl)amine was used instead of 28.6 g of 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine Compound S7 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol -3-yl)phenyl)-[1,1'-biphenyl]-4-amine) 33.4g was obtained.

합성예synthesis example 8: 화합물 S8 합성 8: Synthesis of Compound S8

9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6g 대신 N-([1,1'-biphenyl]-4-yl)-[1,1'-biphenyl]-2-amine 32.2g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S8 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-2-amine) 33.8g을 얻었다. N-([1,1'-biphenyl]-4-yl)-[1,1'-biphenyl]-2-amine instead of 9,9-dimethyl-N-phenyl-9H-fluoren-2-amine 28.6 g 32.2 g The reaction was carried out in the same manner as in Synthesis Example 1 except for the use of compound S8 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(dibenzo[b,d]furan -4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-2-amine) 33.8g was obtained.

합성예synthesis example 9: 화합물 S9 합성 9: Synthesis of Compound S9

I-5 24.5g 대신 I-6 29.5g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S9 (N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-2-amine) 33.8g을 얻었다. Compound S9 (N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl) -9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-2-amine) 33.8g was obtained.

합성예synthesis example 10: 화합물 S10 합성 10: Synthesis of Compound S10

I-5 24.5g 대신 I-6 29.5g 사용한 것 이외에 합성예 2와 동일하게 반응을 진행하여 화합물 S10 (N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-4-amine) 33.4g을 얻었다. Compound S10 (N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl) -9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-4-amine) 33.4g was obtained.

합성예synthesis example 11: 화합물 S11 합성 11: Synthesis of Compound S11

I-5 24.5g 대신 I-6 29.5g 사용한 것 이외에 합성예 3과 동일하게 반응을 진행하여 화합물 S11 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-amine) 36.2g을 얻었다. Compound S11 (N-([1,1'-biphenyl]-4-yl)-N-(4-( 6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-amine) 36.2 g got it

합성예synthesis example 12: 화합물 S12 합성 12: Synthesis of compound S12

I-5 24.5g 대신 I-6 29.5g 사용한 것 이외에 합성예 4와 동일하게 반응을 진행하여 화합물 S12 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-4-amine) 36.6g을 얻었다.Compound S12 (N-([1,1'-biphenyl]-4-yl)-N-(4-( 6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-4-amine) 36.6 g got it

합성예synthesis example 13: 화합물 S13 합성 13: Synthesis of Compound S13

I-5 24.5g 대신 I-6 29.5g 사용한 것 이외에 합성예 5와 동일하게 반응을 진행하여 화합물 S13 (N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-N-phenyl-[1,1'-biphenyl]-4-amine) 32.1g을 얻었다. Compound S13 (N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl) 32.1 g of -9-phenyl-9H-carbazol-3-yl) phenyl) -N-phenyl- [1,1'-biphenyl] -4-amine) was obtained.

합성예synthesis example 14: 화합물 S14 합성 14: Synthesis of Compound S14

I-5 24.5g 대신 I-6 29.5g 사용한 것 이외에 합성예 6과 동일하게 반응을 진행하여 화합물 S14 (N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-N-phenyl-[1,1'-biphenyl]-2-amine) 32g을 얻었다. Compound S14 (N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl) 32 g of -9-phenyl-9H-carbazol-3-yl) phenyl) -N-phenyl- [1,1'-biphenyl] -2-amine) was obtained.

합성예synthesis example 15: 화합물 S15 합성 15: Synthesis of Compound S15

I-5 24.5g 대신 I-6 29.5g 사용한 것 이외에 합성예 7과 동일하게 반응을 진행하여 화합물 S15 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-4-amine) 34.5g을 얻었다. Compound S15 (N-([1,1'-biphenyl]-4-yl)-N-(4-( 34.5 g of 6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-4-amine) was obtained. .

합성예 16: 화합물 S16 합성Synthesis Example 16: Synthesis of Compound S16

I-5 24.5g 대신 I-6 29.5g 사용한 것 이외에 합성예 8과 동일하게 반응을 진행하여 화합물 S16 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-2-amine) 34g을 얻었다. Compound S16 (N-([1,1'-biphenyl]-4-yl)-N-(4-( 34 g of 6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-2-amine) was obtained.

합성예 17: 화합물 S17 합성Synthesis Example 17: Synthesis of Compound S17

I-5 24.5g 대신 I-7 29.5g 사용한 것 이외에 합성예 1과 동일하게 반응을 진행하여 화합물 S17 (N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-2-amine) 33g을 얻었다. Compound S17 (N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl) -9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-2-amine) 33g was obtained.

합성예 18: 화합물 S18 합성Synthesis Example 18: Synthesis of Compound S18

I-5 24.5g 대신 I-7 29.5g 사용한 것 이외에 합성예 2와 동일하게 반응을 진행하여 화합물 S18 (N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-N-phenyl-9H-fluoren-4-amine) 32.2g을 얻었다. Compound S18 (N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl) 32.2 g of -9-phenyl-9H-carbazol-3-yl) phenyl) -9,9-dimethyl-N-phenyl-9H-fluoren-4-amine) was obtained.

합성예 19: 화합물 S19 합성Synthesis Example 19: Synthesis of Compound S19

I-5 24.5g 대신 I-7 29.5g 사용한 것 이외에 합성예 3과 동일하게 반응을 진행하여 화합물 S19 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-amine) 34.8g을 얻었다. Compound S19 (N-([1,1'-biphenyl]-4-yl)-N-(4-( 6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-amine) 34.8 g got it

합성예 20: 화합물 S20 합성Synthesis Example 20: Synthesis of Compound S20

I-5 24.5g 대신 I-7 29.5g 사용한 것 이외에 합성예 4와 동일하게 반응을 진행하여 화합물 S20 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-4-amine) 35.3g을 얻었다. Compound S20 (N-([1,1'-biphenyl]-4-yl)-N-(4-( 6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-9,9-dimethyl-9H-fluoren-4-amine) 35.3 g got it

합성예 21: 화합물 S21 합성Synthesis Example 21: Synthesis of Compound S21

I-5 24.5g 대신 I-7 29.5g 사용한 것 이외에 합성예 5와 동일하게 반응을 진행하여 화합물 S21 (N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-N-phenyl-[1,1'-biphenyl]-4-amine) 31g을 얻었다. Compound S21 (N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl) 31 g of -9-phenyl-9H-carbazol-3-yl) phenyl) -N-phenyl- [1,1'-biphenyl] -4-amine) was obtained.

합성예 22: 화합물 S22 합성Synthesis Example 22: Synthesis of Compound S22

I-5 24.5g 대신 I-7 29.5g 사용한 것 이외에 합성예 6과 동일하게 반응을 진행하여 화합물 S22 (N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-N-phenyl-[1,1'-biphenyl]-2-amine) 31.3g을 얻었다. Compound S22 (N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl) 31.3 g of -9-phenyl-9H-carbazol-3-yl) phenyl) -N-phenyl- [1,1'-biphenyl] -2-amine) was obtained.

합성예 23: 화합물 S23 합성Synthesis Example 23: Synthesis of Compound S23

I-5 24.5g 대신 I-7 29.5g 사용한 것 이외에 합성예 7과 동일하게 반응을 진행하여 화합물 S23 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-4-amine) 31.4g을 얻었다. Compound S23 (N-([1,1'-biphenyl]-4-yl)-N-(4-( 31.4 g of 6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-4-amine) was obtained. .

합성예 24: 화합물 S24 합성Synthesis Example 24: Synthesis of Compound S24

I-5 24.5g 대신 I-7 29.5g 사용한 것 이외에 합성예 8과 동일하게 반응을 진행하여 화합물 S24 (N-([1,1'-biphenyl]-4-yl)-N-(4-(6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-2-amine) 30.6g을 얻었다. Compound S24 (N-([1,1'-biphenyl]-4-yl)-N-(4-( 30.6 g of 6-(9,9-dimethyl-9H-fluoren-4-yl)-9-phenyl-9H-carbazol-3-yl)phenyl)-[1,1'-biphenyl]-2-amine) was obtained. .

합성예 25: 화합물 S25 합성Synthesis Example 25: Synthesis of Compound S25

I-5 24.5g 대신 I-8 32.1g 사용한 것 이외에 합성예 5와 동일하게 반응을 진행하여 화합물 S25 (N-([1,1'-biphenyl]-4-yl)-4'-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)-N-phenyl-[1,1'-biphenyl]-4-amine) 32.6g을 얻었다. Compound S25 (N-([1,1'-biphenyl]-4-yl)-4'-(6- (dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)-N-phenyl-[1,1'-biphenyl]-4-amine) to obtain 32.6 g.

합성예 26: 화합물 S26 합성Synthesis Example 26: Synthesis of Compound S26

I-5 24.5g 대신 I-8 32.1g 사용한 것 이외에 합성예 6과 동일하게 반응을 진행하여 화합물 S26 (N-(4'-(6-(dibenzo[b,d]furan-4-yl)-9-phenyl-9H-carbazol-3-yl)-[1,1'-biphenyl]-4-yl)-N-phenyl-[1,1'-biphenyl]-2-amine) 32.2g을 얻었다. Compound S26 (N-(4'-(6-(dibenzo[b,d]furan-4-yl)- 32.2 g of 9-phenyl-9H-carbazol-3-yl)-[1,1'-biphenyl]-4-yl)-N-phenyl-[1,1'-biphenyl]-2-amine) was obtained.

합성예 27: 화합물 S27 합성Synthesis Example 27: Synthesis of Compound S27

I-5 24.5g 대신 I-9 32.9g 사용한 것 이외에 합성예 5와 동일하게 반응을 진행하여 화합물 S27 (N-([1,1'-biphenyl]-4-yl)-4'-(6-(dibenzo[b,d]thiophen-4-yl)-9-phenyl-9H-carbazol-3-yl)-N-phenyl-[1,1'-biphenyl]-4-amine) 32.4g을 얻었다. Compound S27 (N-([1,1'-biphenyl]-4-yl)-4'-(6- (dibenzo[b,d]thiophen-4-yl)-9-phenyl-9H-carbazol-3-yl)-N-phenyl-[1,1'-biphenyl]-4-amine) 32.4 g was obtained.

합성예 28: 화합물 S28 합성Synthesis Example 28: Synthesis of Compound S28

I-5 24.5g 대신 I-9 32.9g 사용한 것 이외에 합성예 6과 동일하게 반응을 진행하여 화합물 S28 (N-(4'-(6-(dibenzo[b,d]thiophen-4-yl)-9-phenyl-9H-carbazol-3-yl)-[1,1'-biphenyl]-4-yl)-N-phenyl-[1,1'-biphenyl]-2-amine) 32.9g을 얻었다. Compound S28 (N-(4'-(6-(dibenzo[b,d]thiophen-4-yl)- 32.9 g of 9-phenyl-9H-carbazol-3-yl)-[1,1'-biphenyl]-4-yl)-N-phenyl-[1,1'-biphenyl]-2-amine) was obtained.

합성예 29: 화합물 S29 합성Synthesis Example 29: Synthesis of Compound S29

I-5 24.5g 대신 I-10 33.4g 사용한 것 이외에 합성예 5와 동일하게 반응을 진행하여 화합물 S29 (N-([1,1'-biphenyl]-4-yl)-4'-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)-N-phenyl-[1,1'-biphenyl]-4-amine) 33.7g을 얻었다. Compound S29 (N-([1,1'-biphenyl] -4-yl) -4'-(6- (9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)-N-phenyl-[1,1'-biphenyl]-4-amine) 33.7g was obtained .

합성예 30: 화합물 S30 합성Synthesis Example 30: Synthesis of Compound S30

I-5 24.5g 대신 I-10 33.4g 사용한 것 이외에 합성예 6과 동일하게 반응을 진행하여 화합물 S30 (N-(4'-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)-[1,1'-biphenyl]-4-yl)-N-phenyl-[1,1'-biphenyl]-2-amine) 33.2g을 얻었다.Compound S30 (N-(4'-(6-(9,9-dimethyl-9H-fluoren-2-yl )-9-phenyl-9H-carbazol-3-yl)-[1,1'-biphenyl]-4-yl)-N-phenyl-[1,1'-biphenyl]-2-amine) 33.2 g was obtained .

합성예 31: 화합물 S31 합성Synthesis Example 31: Synthesis of Compound S31

I-5 24.5g 대신 I-10 33.4g 사용한 것 이외에 합성예 5와 동일하게 반응을 진행하여 화합물 S31 (N-([1,1'-biphenyl]-4-yl)-4'-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)-N-phenyl-[1,1'-biphenyl]-4-amine) 32.4g을 얻었다. Compound S31 (N-([1,1'-biphenyl] -4-yl) -4'-(6- (9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)-N-phenyl-[1,1'-biphenyl]-4-amine) 32.4g was obtained .

합성예 32: 화합물 S32 합성Synthesis Example 32: Synthesis of Compound S32

I-5 24.5g 대신 I-10 33.4g 사용한 것 이외에 합성예 6과 동일하게 반응을 진행하여 화합물 S32 (N-(4'-(6-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-yl)-[1,1'-biphenyl]-4-yl)-N-phenyl-[1,1'-biphenyl]-2-amine) 33.7g을 얻었다.Compound S32 (N-(4'-(6-(9,9-dimethyl-9H-fluoren-2-yl )-9-phenyl-9H-carbazol-3-yl)-[1,1'-biphenyl]-4-yl)-N-phenyl-[1,1'-biphenyl]-2-amine) 33.7 g was obtained .

화합물compound 수율(%)transference number(%) FD-MSFD-MS S1S1 8383 m/z: 768.31 (100.0%), 769.32 (61.8%), 770.32 (18.6%), 771.32 (2.8%)m/z: 768.31 (100.0%), 769.32 (61.8%), 770.32 (18.6%), 771.32 (2.8%) S2 S2 8282 m/z: 768.31 (100.0%), 769.32 (61.9%), 770.32 (18.8%), 771.32 (2.5%)m/z: 768.31 (100.0%), 769.32 (61.9%), 770.32 (18.8%), 771.32 (2.5%) S3S3 8282 m/z: 844.35 (100.0%), 845.35 (68.3%), 846.35 (22.7%), 847.36 (4.1%)m/z: 844.35 (100.0%), 845.35 (68.3%), 846.35 (22.7%), 847.36 (4.1%) S4S4 8383 m/z: 844.35 (100.0%), 845.35 (68.2%), 846.35 (22.6%), 847.36 (4.3%)m/z: 844.35 (100.0%), 845.35 (68.2%), 846.35 (22.6%), 847.36 (4.3%) S5S5 8181 m/z: 728.28 (100.0%), 729.29 (58.6%), 730.29 (16.3%), 731.29 (3.3%)m/z: 728.28 (100.0%), 729.29 (58.6%), 730.29 (16.3%), 731.29 (3.3%) S6S6 8282 m/z: 728.28 (100.0%), 729.29 (58.2%), 730.29 (16.5%), 731.29 (3.5%)m/z: 728.28 (100.0%), 729.29 (58.2%), 730.29 (16.5%), 731.29 (3.5%) S7S7 8383 m/z: 804.31 (100.0%), 805.32 (64.8%), 806.32 (20.6%), 807.32 (3.7%)m/z: 804.31 (100.0%), 805.32 (64.8%), 806.32 (20.6%), 807.32 (3.7%) S8S8 8484 m/z: 804.31 (100.0%), 805.32 (64.7%), 806.32 (20.8%), 807.32 (3.6%)m/z: 804.31 (100.0%), 805.32 (64.7%), 806.32 (20.8%), 807.32 (3.6%) S9S9 8585 m/z: 794.37 (100.0%), 795.37 (64.8%), 796.37 (20.6%), 797.38 (3.7%)m/z: 794.37 (100.0%), 795.37 (64.8%), 796.37 (20.6%), 797.38 (3.7%) S10S10 8484 m/z: 794.37 (100.0%), 795.37 (64.8%), 796.37 (20.9%), 797.38 (3.4%)m/z: 794.37 (100.0%), 795.37 (64.8%), 796.37 (20.9%), 797.38 (3.4%) S11S11 8383 m/z: 870.40 (100.0%), 871.40 (71.5%), 872.40 (25.2%), 873.41 (4.8%)m/z: 870.40 (100.0%), 871.40 (71.5%), 872.40 (25.2%), 873.41 (4.8%) S12S12 8484 m/z: 870.40 (100.0%), 871.40 (71.2%), 872.40 (25.1%), 873.41 (5.2%)m/z: 870.40 (100.0%), 871.40 (71.2%), 872.40 (25.1%), 873.41 (5.2%) S13S13 8585 m/z: 754.33 (100.0%), 755.34 (61.7%), 756.34 (18.8%), 757.34 (2.7%)m/z: 754.33 (100.0%), 755.34 (61.7%), 756.34 (18.8%), 757.34 (2.7%) S14S14 8585 m/z: 754.33 (100.0%), 755.34 (61.8%), 756.34 (18.6%), 757.34 (2.8%)m/z: 754.33 (100.0%), 755.34 (61.8%), 756.34 (18.6%), 757.34 (2.8%) S15S15 8383 m/z: 830.37 (100.0%), 831.37 (68.2%), 832.37 (22.9%), 833.38 (4.0%)m/z: 830.37 (100.0%), 831.37 (68.2%), 832.37 (22.9%), 833.38 (4.0%) S16S16 8282 m/z: 830.37 (100.0%), 831.37 (68.0%), 832.37 (22.7%), 833.38 (4.5%)m/z: 830.37 (100.0%), 831.37 (68.0%), 832.37 (22.7%), 833.38 (4.5%) S17S17 8383 m/z: 794.37 (100.0%), 795.37 (64.7%), 796.37 (20.8%), 797.38 (3.6%)m/z: 794.37 (100.0%), 795.37 (64.7%), 796.37 (20.8%), 797.38 (3.6%) S18S18 8181 m/z: 794.37 (100.0%), 795.37 (64.9%), 796.37 (20.5%), 797.38 (3.7%)m/z: 794.37 (100.0%), 795.37 (64.9%), 796.37 (20.5%), 797.38 (3.7%) S19S19 8080 m/z: 870.40 (100.0%), 871.40 (71.3%), 872.40 (25.3%), 873.41 (4.9%)m/z: 870.40 (100.0%), 871.40 (71.3%), 872.40 (25.3%), 873.41 (4.9%) S20S20 8181 m/z: 870.40 (100.0%), 871.40 (71.1%), 872.40 (25.3 %), 873.41 (5.1%)m/z: 870.40 (100.0%), 871.40 (71.1%), 872.40 (25.3%), 873.41 (5.1%) S21S21 8282 m/z: 754.33 (100.0%), 755.34 (61.5%), 756.34 (18.9%), 757.34 (2.8%)m/z: 754.33 (100.0%), 755.34 (61.5%), 756.34 (18.9%), 757.34 (2.8%) S22S22 8383 m/z: 754.33 (100.0%), 755.34 (61.9%), 756.34 (18.8%), 757.34 (2.5%)m/z: 754.33 (100.0%), 755.34 (61.9%), 756.34 (18.8%), 757.34 (2.5%) S23S23 8383 m/z: 830.37 (100.0%), 831.37 (68.1%), 832.37 (22.8%), 833.38 (4.2%)m/z: 830.37 (100.0%), 831.37 (68.1%), 832.37 (22.8%), 833.38 (4.2%) S24S24 8181 m/z: 830.37 (100.0%), 831.37 (68.4%), 832.37 (22.4%), 833.38 (4.4%)m/z: 830.37 (100.0%), 831.37 (68.4%), 832.37 (22.4%), 833.38 (4.4%) S25S25 8181 m/z: 804.31 (100.0%), 805.32 (64.7%), 806.32 (20.6%), 807.32 (3.8%)m/z: 804.31 (100.0%), 805.32 (64.7%), 806.32 (20.6%), 807.32 (3.8%) S26S26 8080 m/z: 804.31 (100.0%), 805.32 (64.8%), 806.32 (20.9%), 807.32 (3.4%)m/z: 804.31 (100.0%), 805.32 (64.8%), 806.32 (20.9%), 807.32 (3.4%) S27S27 7979 m/z: 820.29 (100.0%), 821.29 (64.7%), 822.30 (20.6%), 822.29 (4.6%), 823.30 (3.8%), 823.29 (2.8%)m/z: 820.29 (100.0%), 821.29 (64.7%), 822.30 (20.6%), 822.29 (4.6%), 823.30 (3.8%), 823.29 (2.8%) S28S28 8080 m/z: 820.29 (100.0%), 821.29 (64.7%), 822.30 (20.9%), 822.29 (4.7%), 823.30 (3.7%), 823.29 (2.5%)m/z: 820.29 (100.0%), 821.29 (64.7%), 822.30 (20.9%), 822.29 (4.7%), 823.30 (3.7%), 823.29 (2.5%) S29S29 8181 m/z: 830.37 (100.0%), 831.37 (68.2%), 832.37 (22.7%), 833.38 (4.2%)m/z: 830.37 (100.0%), 831.37 (68.2%), 832.37 (22.7%), 833.38 (4.2%) S30S30 8080 m/z: 830.37 (100.0%), 831.37 (68.3%), 832.37 (22.7%), 833.38 (4.1%)m/z: 830.37 (100.0%), 831.37 (68.3%), 832.37 (22.7%), 833.38 (4.1%) S31S31 7878 m/z: 830.37 (100.0%), 831.37 (68.4%), 832.37 (22.7%), 833.38 (4.0%)m/z: 830.37 (100.0%), 831.37 (68.4%), 832.37 (22.7%), 833.38 (4.0%) S32S32 8181 m/z: 830.37 (100.0%), 831.37 (68.5%), 832.37 (22.5%), 833.38 (4.1%)m/z: 830.37 (100.0%), 831.37 (68.5%), 832.37 (22.5%), 833.38 (4.1%)

Figure 112017057734110-pat00053
Figure 112017057734110-pat00053
Figure 112017057734110-pat00054
Figure 112017057734110-pat00054
Figure 112017057734110-pat00055
Figure 112017057734110-pat00055
S1S1 S2S2 S3S3
Figure 112017057734110-pat00056
Figure 112017057734110-pat00056
Figure 112017057734110-pat00057
Figure 112017057734110-pat00057
Figure 112017057734110-pat00058
Figure 112017057734110-pat00058
S4S4 S5S5 S6S6
Figure 112017057734110-pat00059
Figure 112017057734110-pat00059
Figure 112017057734110-pat00060
Figure 112017057734110-pat00060
Figure 112017057734110-pat00061
Figure 112017057734110-pat00061
S7S7 S8S8 S9S9
Figure 112017057734110-pat00062
Figure 112017057734110-pat00062
Figure 112017057734110-pat00063
Figure 112017057734110-pat00063
Figure 112017057734110-pat00064
Figure 112017057734110-pat00064
S10S10 S11S11 S12S12
Figure 112017057734110-pat00065
Figure 112017057734110-pat00065
Figure 112017057734110-pat00066
Figure 112017057734110-pat00066
Figure 112017057734110-pat00067
Figure 112017057734110-pat00067
S13S13 S14S14 S15S15
Figure 112017057734110-pat00068
Figure 112017057734110-pat00068
Figure 112017057734110-pat00069
Figure 112017057734110-pat00069
Figure 112017057734110-pat00070
Figure 112017057734110-pat00070
S16S16 S17S17 S18S18
Figure 112017057734110-pat00071
Figure 112017057734110-pat00071
Figure 112017057734110-pat00072
Figure 112017057734110-pat00072
Figure 112017057734110-pat00073
Figure 112017057734110-pat00073
S19S19 S20S20 S21S21
Figure 112017057734110-pat00074
Figure 112017057734110-pat00074
Figure 112017057734110-pat00075
Figure 112017057734110-pat00075
Figure 112017057734110-pat00076
Figure 112017057734110-pat00076
S22S22 S23S23 S24S24
Figure 112017057734110-pat00077
Figure 112017057734110-pat00077
Figure 112017057734110-pat00078
Figure 112017057734110-pat00078
Figure 112017057734110-pat00079
Figure 112017057734110-pat00079
S25S25 S26S26 S27S27
Figure 112017057734110-pat00080
Figure 112017057734110-pat00080
Figure 112017057734110-pat00081
Figure 112017057734110-pat00081
Figure 112017057734110-pat00082
Figure 112017057734110-pat00082
S28S28 S29S29 S30S30
Figure 112017057734110-pat00083
Figure 112017057734110-pat00083
Figure 112017057734110-pat00084
Figure 112017057734110-pat00084
S31S31 S32S32

유기발광소자 제조Manufacture of organic light emitting devices

실시예 1Example 1

인듐틴옥사이드(ITO)가 1500Å 두께가 박막 코팅된 유리 기판을 증류수 초음파로 세척하였다. 증류수 세척이 끝나면 이소프로필 알코올, 아세톤, 메탄올 등의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 이송 시킨 다음 산소 플라즈마를 이용하여 상기 기판을 5분간 세정 한 후 ITO 기판 상부에 열 진공 증착기(thermal evaporator)를 이용하여 정공주입층 HI01 600Å, HATCN 50Å, 정공수송층으로 화합물 S1를 300Å 제막하였다. 다음으로 상기 발광층으로 BH:BD 3%로 도핑하여 250Å 제막하였다. 다음으로 전자전달층으로 ET:Liq(1:1) 300Å 제막한 후 LiF 10 Å, 알루미늄(Al) 1000Å 제막하고, 이 소자를 글로브 박스에서 밀봉(Encapsulation)하여 유기발광소자를 제작하였다.A glass substrate coated with indium tin oxide (ITO) having a thickness of 1500 Å was washed with distilled water and ultrasonic waves. After cleaning with distilled water, it is ultrasonically cleaned with solvents such as isopropyl alcohol, acetone, and methanol, dried, transferred to a plasma cleaner, and then cleaned by using oxygen plasma for 5 minutes. evaporator) was used to form a hole injection layer HI01 600 Å, HATCN 50 Å, and a hole transport layer of 300 Å compound S1. Next, the light emitting layer was doped with 3% BH:BD to form a 250 Å film. Next, as an electron transport layer, 300 Å of ET:Liq (1:1) was formed, followed by 10 Å of LiF and 1000 Å of aluminum (Al), and the device was encapsulated in a glove box to manufacture an organic light emitting device.

실시예 2 내지 실시예 20Examples 2 to 20

화합물 S1 대신, 각각 화합물 S3, S5 내지 S17, S19, S21 내지 S24를 정공수송층으로 사용한 것을 제외하고는 실시예 1과 동일한 방법으로 유기발광소자를 제작하였다.An organic light emitting diode was manufactured in the same manner as in Example 1, except that instead of compound S1, compounds S3, S5 to S17, S19, and S21 to S24 were used as hole transport layers.

비교예 1 내지 비교예 9Comparative Examples 1 to 9

화합물 S1 대신, 각각 하기 표 4의 Ref.1(NPB) 내지 내지 Ref.9를 정공수송층으로 사용한 것을 제외하고는 실시예 1과 동일한 방법으로 유기발광소자를 제작하였다.An organic light-emitting device was manufactured in the same manner as in Example 1, except that Ref.1 (NPB) to Ref.9 of Table 4 below were used as hole transport layers instead of Compound S1.

Ref.1(NPB)Ref.1 (NPB) Ref.2Ref.2 Ref.3Ref.3

Figure 112017057734110-pat00085
Figure 112017057734110-pat00085
Figure 112017057734110-pat00086
Figure 112017057734110-pat00086
Figure 112017057734110-pat00087
Figure 112017057734110-pat00087
Ref.4Ref.4 Ref.5Ref.5 Ref.6Ref.6
Figure 112017057734110-pat00088
Figure 112017057734110-pat00088
Figure 112017057734110-pat00089
Figure 112017057734110-pat00089
Figure 112017057734110-pat00090
Figure 112017057734110-pat00090
Ref.7Ref.7 Ref.8Ref.8 Ref.9Ref.9
Figure 112017057734110-pat00091
Figure 112017057734110-pat00091
Figure 112017057734110-pat00092
Figure 112017057734110-pat00092
Figure 112017057734110-pat00093
Figure 112017057734110-pat00093

실시예 21Example 21

인듐틴옥사이드(ITO)가 1500Å 두께가 박막 코팅된 유리 기판을 증류수 초음파로 세척하였다. 증류수 세척이 끝나면 이소프로필 알코올, 아세톤, 메탄올 등의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 이송 시킨 다음 산소 플라즈마를 이용하여 상기 기판을 5분간 세정 한 후 ITO 기판 상부에 열 진공 증착기(thermal evaporator)를 이용하여 정공주입층 HI 600Å, HATCN 50Å, 제1 정공수송층으로 NPB를 350Å 제막한 후, 제2 정공수송층(발광보조층)으로 화합물S2를 150Å 제막하였다. 다음으로 상기 발광층으로 BH:BD1 3%로 도핑하여 250Å 제막하였다. 다음으로 전자전달층으로 ET:Liq(1:1) 300Å 제막한 후 LiF 10Å, 알루미늄(Al) 1000Å 제막하고, 이 소자를 글로브 박스에서 밀봉(Encapsulation)하여 유기발광소자를 제작하였다.A glass substrate coated with indium tin oxide (ITO) having a thickness of 1500 Å was washed with distilled water and ultrasonic waves. After cleaning with distilled water, it is ultrasonically cleaned with solvents such as isopropyl alcohol, acetone, and methanol, dried, transferred to a plasma cleaner, and then cleaned by using oxygen plasma for 5 minutes. evaporator) was used to form a hole injection layer HI 600 Å, HATCN 50 Å, and 350 Å of NPB as the first hole transport layer, and then 150 Å of Compound S2 was formed as a second hole transport layer (light emitting auxiliary layer). Next, the light emitting layer was doped with 3% of BH:BD1 to form a 250 Å film. Next, as an electron transport layer, 300 Å of ET:Liq (1:1) was formed, followed by 10 Å of LiF and 1000 Å of aluminum (Al), and encapsulation of the device in a glove box to manufacture an organic light emitting device.

실시예 22 내지 실시예 32Examples 22 to 32

화합물 S2 대신, 각각 화합물 S4, S6, S18, S20, S25 내지 S32를 제2 정공수송층(발광보조층)으로 사용한 것을 제외하고는 실시예 21과 동일한 방법으로 유기발광소자를 제작하였다.An organic light emitting device was manufactured in the same manner as in Example 21, except that instead of compound S2, compounds S4, S6, S18, S20, and S25 to S32 were used as the second hole transport layer (light emitting auxiliary layer).

비교예 10 내지 비교예 12Comparative Examples 10 to 12

화합물 S2 대신, 각각 하기 표 5의 Ref.10 내지 Ref.12를 제2 정공수송층으(발광보조층)로 사용한 것을 제외하고는 실시예 21과 동일한 방법으로 유기발광소자를 제작하였다.An organic light emitting device was manufactured in the same manner as in Example 21, except that Ref.10 to Ref.12 of Table 5 were used as the second hole transport layer (light emitting auxiliary layer) instead of Compound S2.

Ref.10Ref.10 Ref.11Ref.11 Ref.12.Ref.12.

Figure 112017057734110-pat00094
Figure 112017057734110-pat00094
Figure 112017057734110-pat00095
Figure 112017057734110-pat00095
Figure 112017057734110-pat00096
Figure 112017057734110-pat00096

[유기 발광 소자의 성능평가][Performance evaluation of organic light emitting device]

키슬리 2400 소스 메져먼트 유닛(Kiethley 2400 source measurement unit) 으로 전압을 인가하여 전자 및 정공을 주입하고 코니카 미놀타(Konica Minolta) 분광복사계(CS-2000)를 이용하여 빛이 방출될 때의 휘도를 측정함으로써, 실시예 및 비교예의 유기발광소자의 성능을 인가전압에 대한 전류 밀도 및 휘도를 대기압 조건하에 측정하여 평가하였으며, 그 결과를 각각 [표 6] 및 [표 7]에 나타내었다.Apply voltage to the Keithley 2400 source measurement unit to inject electrons and holes, and measure the luminance when light is emitted using a Konica Minolta spectroradiometer (CS-2000) By doing so, the performance of the organic light emitting devices of Examples and Comparative Examples was evaluated by measuring current density and luminance with respect to applied voltage under atmospheric pressure conditions, and the results are shown in [Table 6] and [Table 7], respectively.

구동전압
Op.V
drive voltage
Op.V
전류밀도
mA/cm2
current density
mA/cm 2
전류효율
Cd/A
current efficiency
Cd/A
색좌표
CIEx
color coordinates
CIEx
색좌표
CIEy
color coordinates
CIEy
LT95
@1000nit
LT95
@1000nit
실시예1Example 1 3.763.76 10.0010.00 6.826.82 0.1400.140 0.1200.120 185185 실시예2Example 2 3.783.78 10.0010.00 6.866.86 0.1400.140 0.1230.123 195195 실시예3Example 3 3.893.89 10.0010.00 6.686.68 0.1400.140 0.1220.122 170170 실시예4Example 4 3.873.87 10.0010.00 6.706.70 0.1400.140 0.1210.121 175175 실시예5Example 5 3.853.85 10.0010.00 6.756.75 0.1400.140 0.1230.123 175175 실시예6Example 6 3.863.86 10.0010.00 6.776.77 0.1400.140 0.1220.122 180180 실시예7Example 7 3.753.75 10.0010.00 6.816.81 0.1400.140 0.1230.123 180180 실시예8Example 8 3.903.90 10.0010.00 6.856.85 0.1400.140 0.1230.123 190190 실시예9Example 9 3.753.75 10.0010.00 6.836.83 0.1400.140 0.1220.122 185185 실시예10Example 10 3.913.91 10.0010.00 6.876.87 0.1400.140 0.1210.121 195195 실시예11Example 11 3.893.89 10.0010.00 6.716.71 0.1400.140 0.1220.122 170170 실시예12Example 12 3.883.88 10.0010.00 6.726.72 0.1400.140 0.1210.121 175175 실시예13Example 13 3.833.83 10.0010.00 6.746.74 0.1400.140 0.1210.121 170170 실시예14Example 14 3.843.84 10.0010.00 6.776.77 0.1400.140 0.1220.122 170170 실시예15Example 15 3.763.76 10.0010.00 6.826.82 0.1400.140 0.1230.123 180180 실시예16Example 16 3.743.74 10.0010.00 6.856.85 0.1400.140 0.1210.121 190190 실시예17Example 17 3.883.88 10.0010.00 6.716.71 0.1400.140 0.1200.120 175175 실시예18Example 18 3.893.89 10.0010.00 6.736.73 0.1400.140 0.1210.121 175175 실시예19Example 19 3.853.85 10.0010.00 6.776.77 0.1400.140 0.1220.122 180180 실시예20Example 20 3.873.87 10.0010.00 6.796.79 0.1400.140 0.1210.121 180180 비교예1Comparative Example 1 4.214.21 10.0010.00 4.954.95 0.1400.140 0.1320.132 5555 비교예2Comparative Example 2 4.074.07 10.0010.00 5.755.75 0.1400.140 0.1250.125 110110 비교예3Comparative Example 3 4.124.12 10.0010.00 5.645.64 0.1400.140 0.1260.126 120120 비교예4Comparative Example 4 4.014.01 10.0010.00 5.735.73 0.1400.140 0.1250.125 115115 비교예5Comparative Example 5 3.933.93 10.0010.00 5.895.89 0.1400.140 0.1240.124 130130 비교예6Comparative Example 6 4.024.02 10.0010.00 5.725.72 0.1400.140 0.1250.125 115115 비교예7Comparative Example 7 3.953.95 10.0010.00 5.875.87 0.1400.140 0.1250.125 130130 비교예8Comparative Example 8 4.024.02 10.0010.00 5.705.70 0.1400.140 0.1240.124 110110 비교예9Comparative Example 9 3.993.99 10.0010.00 5.695.69 0.1400.140 0.1230.123 115115

구동전압
Op.V
driving voltage
Op.V
전류밀도
mA/cm2
current density
mA/cm 2
전류효율
Cd/A
current efficiency
Cd/A
색좌표
CIEx
color coordinates
CIEx
색좌표
CIEy
color coordinates
CIEy
LT95
@1000nit
LT95
@1000nit
실시예21Example 21 4.084.08 10.0010.00 6.326.32 0.1400.140 0.1280.128 125125 실시예22Example 22 4.064.06 10.0010.00 6.336.33 0.1400.140 0.1270.127 130130 실시예23Example 23 4.084.08 10.0010.00 6.326.32 0.1400.140 0.1280.128 125125 실시예24Example 24 4.074.07 10.0010.00 6.346.34 0.1400.140 0.1270.127 135135 실시예25Example 25 4.084.08 10.0010.00 6.276.27 0.1400.140 0.1270.127 120120 실시예26Example 26 4.084.08 10.0010.00 6.296.29 0.1400.140 0.1280.128 130130 실시예27Example 27 4.094.09 10.0010.00 6.256.25 0.1400.140 0.1290.129 135135 실시예28Example 28 4.094.09 10.0010.00 6.286.28 0.1400.140 0.1290.129 120120 실시예29Example 29 4.084.08 10.0010.00 6.246.24 0.1400.140 0.1270.127 125125 실시예30Example 30 4.084.08 10.0010.00 6.266.26 0.1400.140 0.1270.127 130130 실시예31Example 31 4.074.07 10.0010.00 6.286.28 0.1400.140 0.1270.127 135135 실시예32Example 32 4.084.08 10.0010.00 6.306.30 0.1400.140 0.1280.128 125125 비교예10Comparative Example 10 4.124.12 10.0010.00 5.425.42 0.1400.140 0.1290.129 8585 비교예11Comparative Example 11 4.154.15 10.0010.00 5.405.40 0.1400.140 0.1300.130 8080 비교예12Comparative Example 12 4.114.11 10.0010.00 5.525.52 0.1400.140 0.1280.128 9595

상기 표 6 및 표 7을 참조하면, 아릴아민이 치환된 카바졸에 디벤조퓨란이나 플루오렌이 치환된 본 발명의 화합물을 사용한 실시예 1 내지 실시예 32의 소자들은 보다 낮은 구동전압과 높은 효율, 장수명 특성을 나타냄을 확인할 수 있었다.Referring to Tables 6 and 7, the devices of Examples 1 to 32 using the compound of the present invention in which dibenzofuran or fluorene is substituted for arylamine-substituted carbazole have lower driving voltage and higher efficiency , it was confirmed that it exhibited long life characteristics.

보다 구체적으로, 상기 표 6은 본 발명의 화합물과 Ref.1 내지 Ref.9을 정공수송층으로 사용하여 제작된 유기발광소자의 특성 평가로써, 상기 표 6에 나타나는 바와 같이, 카바졸에 다이벤조퓨란, 다이벤조싸이오펜 또는 플루오렌의 치환기가 없거나 페닐기로 치환된 Ref.2와 Ref.3 물질을 사용한 비교예 2와 비교예 3에 비하여, 카바졸에 각각 아릴아민과 디벤조퓨란, 디벤조싸이오펜 또는 플루오렌으로 치환된 화합물을 사용한 실시예 1 내지 실시예 20이 보다 낮은 구동전압, 높은 효율 및 장수명 특성을 나타내었다.More specifically, Table 6 is an evaluation of the characteristics of organic light emitting devices fabricated using the compound of the present invention and Ref.1 to Ref.9 as a hole transport layer. As shown in Table 6, dibenzofuran in carbazole , Compared to Comparative Example 2 and Comparative Example 3 using Ref.2 and Ref.3 materials having no substituent of dibenzothiophene or fluorene or substituted with a phenyl group, arylamine, dibenzofuran, and dibenzocyanate in carbazole, respectively Examples 1 to 20 using the compound substituted with opene or fluorene exhibited lower driving voltage, higher efficiency, and longer lifespan.

또한, 카바졸의 N (nitrogen)에 페닐이 아닌 트리페닐렌이 치환된 Ref.4 내지 Ref.7 을 사용한 비교예 4 내지 비교예 7, 아릴아민에 트리페닐렌이 치환된 Ref.8을 사용한 비교예 8, 카바졸과 디벤조퓨란이 직접 결합되지 않고, 페닐렌 연결기를 통하여 연결된 Ref.9를 사용한 비교예 9와 비교하여, 본 발명의 화합물을 사용한 실시예 1 내지 20이 보다 낮은 구동전압, 높은 효율 및 장수명 특성을 나타내었다.In addition, Comparative Examples 4 to 7 using Ref.4 to Ref.7 in which N (nitrogen) of carbazole is substituted with triphenylene instead of phenyl, and Ref.8 in which triphenylene is substituted for arylamine Compared to Comparative Example 8, Comparative Example 9 using Ref.9 where carbazole and dibenzofuran are not directly bonded but connected through a phenylene linking group, Examples 1 to 20 using the compound of the present invention have a lower driving voltage , exhibited high efficiency and long life characteristics.

상기 표 7은 본 발명의 화합물과 Ref.10 내지 Ref.12을 제2 정공수송층(발광보조층)으로 사용하여 제작된 유기발광소자의 특성 평가로써, 상기 표 7에 나타나는 바와 같이, 카바졸에 다이벤조퓨란, 다이벤조싸이오펜 또는 플루오렌의 치환기가 없거나 페닐기로 치환된 Ref.10과 Ref.11을 사용한 비교예 10과 비교예 11, 및 카바졸과 디벤조퓨란이 직접 결합되지 않고, 페닐렌 연결기를 통하여 연결된 Ref.12를 사용한 비교예 12와 비교하여, 본 발명의 화합물을 사용한 실시예 21 내지 32가 보다 낮은 구동전압, 높은 효율 및 장수명 특성을 나타내었다.Table 7 is an evaluation of the characteristics of an organic light emitting device manufactured using the compound of the present invention and Ref.10 to Ref.12 as a second hole transport layer (light emitting auxiliary layer). As shown in Table 7, carbazole Comparative Examples 10 and 11 using Ref.10 and Ref.11 having no substituent of dibenzofuran, dibenzothiophene or fluorene or substituted with a phenyl group, and carbazole and dibenzofuran not directly bonded, phenyl Compared to Comparative Example 12 using Ref.12 connected through a Ren connector, Examples 21 to 32 using the compound of the present invention exhibited lower driving voltage, higher efficiency, and longer lifespan.

전술한 본원의 설명은 예시를 위한 것이며, 본원이 속하는 기술분야의 통상의 지식을 가진 자는 본원의 기술적 사상이나 필수적인 특징을 변경하지 않고서 다른 구체적인 형태로 쉽게 변형이 가능하다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. 예를 들어, 단일형으로 설명되어 있는 각 구성 요소는 분산되어 실시될 수도 있으며, 마찬가지로 분산된 것으로 설명되어 있는 구성 요소들도 결합된 형태로 실시될 수 있다.The above description of the present application is for illustrative purposes, and those skilled in the art will understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present application. Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

본원의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위, 그리고 그 균등 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본원의 범위에 포함되는 것으로 해석되어야 한다. The scope of the present application is indicated by the following claims rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts thereof should be construed as being included in the scope of the present application. .

100: 기판
200: 정공주입층
300: 정공수송층
400: 발광층
500: 전자수송층
600: 전자주입층
1000: 애노드
2000: 캐소드
100: substrate
200: hole injection layer
300: hole transport layer
400: light emitting layer
500: electron transport layer
600: electron injection layer
1000: anode
2000: Cathode

Claims (11)

하기 화학식 1로 표시되는 화합물;
[화학식 1]
Figure 112022000172312-pat00097


상기 화학식 1에서,
X는 CR1R2이고, R1 및 R2는 각각 독립적으로 치환 또는 비치환의 C1~C30의 알킬기, 또는 치환 또는 비치환의 C6~C30의 아릴기이며,
Ar1은 치환 또는 비치환의 C6~C30의 아릴기이고,
L은 직접 결합, 또는 치환 또는 비치환의 C6~C18아릴렌기이며,
Ar2 및 Ar3은 각각 독립적으로 치환 또는 비치환의 C6~C30의 아릴기이고(단, Ar1, Ar2 및 Ar3은 트리페닐렌기는 아니다.),
H는 수소이다.
A compound represented by Formula 1 below;
[Formula 1]
Figure 112022000172312-pat00097


In Formula 1,
X is CR 1 R 2 , R 1 and R 2 are each independently a substituted or unsubstituted C 1 to C 30 alkyl group or a substituted or unsubstituted C 6 to C 30 aryl group,
Ar 1 is a substituted or unsubstituted C 6 ~ C 30 aryl group;
L is a direct bond or a substituted or unsubstituted C 6 ~ C 18 arylene group;
Ar 2 and Ar 3 are each independently a substituted or unsubstituted C 6 ~ C 30 aryl group (provided that Ar 1 , Ar 2 and Ar 3 are not triphenylene groups);
H is hydrogen;
제1항에 있어서,
상기 X는 CR1R2이고, R1및 R2는 각각 독립적으로 메틸 또는 페닐인 화합물.
According to claim 1,
Wherein X is CR 1 R 2 , and R 1 and R 2 are each independently methyl or phenyl.
삭제delete 제1항에 있어서,
상기 L은 치환 또는 비치환된 C6~12인 아릴렌인 화합물.
According to claim 1,
Wherein L is a substituted or unsubstituted C 6 ~ 12 arylene compound.
제1항에 있어서,
상기 Ar1, Ar2, 및 Ar3은 각각 독립적으로 치환 또는 비치환의 C6~C15의 아릴기인 화합물.
According to claim 1,
Wherein Ar 1 , Ar 2 , and Ar 3 are each independently a substituted or unsubstituted C 6 ~ C 15 aryl group.
제1항에 있어서,
상기 Ar1은 페닐, 비페닐, 터페닐, 또는 나프틸이고, Ar2, 및 Ar3는 각각 독립적으로 페닐, 비페닐, 터페닐 또는 플루오렌인 화합물.
According to claim 1,
Wherein Ar 1 is phenyl, biphenyl, terphenyl, or naphthyl, and Ar 2 and Ar 3 are each independently phenyl, biphenyl, terphenyl, or fluorene.
제1항에 있어서,
상기 화합물은 하기 화학식 2 또는 3으로 표시되는 화합물;
[화학식 2]
Figure 112022000172312-pat00098


[화학식 3]
Figure 112022000172312-pat00099


상기 화학식 2 또는 3에서,
L’은 직접결합 또는 페닐렌이다.
According to claim 1,
The compound is a compound represented by Formula 2 or 3;
[Formula 2]
Figure 112022000172312-pat00098


[Formula 3]
Figure 112022000172312-pat00099


In Formula 2 or 3,
L' is a direct bond or phenylene.
제7항에 있어서,
상기 화학식 2 또는 3으로 표시되는 화합물은 하기 화합물 중 어느 하나인 화합물;
Figure 112022066701884-pat00102

Figure 112022066701884-pat00103

According to claim 7,
The compound represented by Formula 2 or 3 is any one of the following compounds;
Figure 112022066701884-pat00102

Figure 112022066701884-pat00103

제1 전극 및 제2 전극 사이에 제1항, 제2항 및 제4항 내지 제8항 중 어느 한 항에 따른 화합물을 함유하는 유기물층을 포함하는 유기 발광 소자.An organic light emitting device comprising an organic material layer containing the compound according to any one of claims 1, 2 and 4 to 8 between the first electrode and the second electrode. 제9항에 있어서,
상기 유기물층은 정공 주입층, 정공 수송층 및 발광보조층 중 1층 이상인 유기 발광 소자.
According to claim 9,
The organic material layer is an organic light emitting device that is at least one layer of a hole injection layer, a hole transport layer, and a light emitting auxiliary layer.
제9항에 있어서,
상기 유기 발광 소자는 정공수송 물질을 함유하는 유기물층 및 상기 화학식 1로 표시되는 화합물을 함유하는 유기물층을 포함하는 유기 발광 소자.
According to claim 9,
The organic light emitting device includes an organic material layer containing a hole transport material and an organic material layer containing a compound represented by Chemical Formula 1.
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