KR102499080B1 - Organic light emitting diode display device and manufacturing method for the same - Google Patents

Abstract

In order to provide an organic light emitting display device capable of improving display quality and a method for manufacturing the same, the present invention provides a pixel area each defining at least three or more subpixels emitting different colors and a bank area surrounding the pixel area. A substrate including a substrate, an insulating layer disposed on the substrate and having an opening in a pixel region, a thin film transistor disposed in a bank region on the substrate, a color filter disposed in the opening, and a planarization disposed above the thin film transistor and the color filter. organic light emitting diode display device including a layer, a first electrode disposed on the planarization layer of the pixel region and connected to the thin film transistor, and a bank covering the edge of the first electrode and disposed on the planarization layer of the bank region, and manufacturing the same provides a way

Description

Organic light emitting diode display device and manufacturing method for the same {Organic light emitting diode display device and manufacturing method for the same}

The present invention relates to an organic light emitting diode display, and more particularly, to an organic light emitting diode display capable of improving display quality and a manufacturing method thereof.

Currently, flat panel display devices such as plasma display panel (PDP), liquid crystal display device (LCD), and organic light emitting diode display device (OLED) are widely studied and used. there is.

Among the above flat panel display devices, the organic light emitting diode display device is a self-emitting device and can be lightweight and thin because it does not require a backlight used in a liquid crystal display device.

In addition, it has excellent viewing angle and contrast ratio compared to liquid crystal displays, is advantageous in terms of power consumption, can be driven at low DC voltage, has a fast response speed, is resistant to external shocks because the internal components are solid, and has a wide operating temperature range. It has advantages.

In particular, since the manufacturing process is simple, there is an advantage in that production costs can be significantly reduced compared to conventional liquid crystal display devices.

1 is a plan view illustrating a conventional organic light emitting diode display, and FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1 .

As shown in FIG. 1, the conventional organic light emitting diode display device includes a substrate 11 including a plurality of pixel areas PA, and a first electrode disposed for each pixel area PA on the substrate 11 ( 29), and a bank 31 disposed in the bank area BA that covers the edge of the first electrode 29 and surrounds each pixel area PA on the first substrate 11.

Specifically, as shown in FIG. 2 , the first electrode 29 of the conventional organic light emitting diode display is disposed in the pixel area PA on the substrate 11 and may be made of a transparent conductive material.

In addition, the thin film transistor Tr is disposed in the bank region BA on the substrate 11, and includes an oxide semiconductor layer 15 disposed on the substrate 11 and a gate insulating film 17 covering the oxide semiconductor layer 15. ), the gate electrode 19 disposed on the gate insulating film 17 corresponding to the oxide semiconductor layer 15, the interlayer insulating film 21 covering the gate electrode 19, and the interlayer insulating film 21 disposed on the upper part and includes source and drain electrodes 23 and 25.

At this time, the gate insulating film 17 and the interlayer insulating film 21 have semiconductor contact holes 28 exposing both sides 15b of the oxide semiconductor layer 15, and the source and drain electrodes 23 and 25 are semiconductor. Through contact holes 28, they are connected to both sides 15b of the oxide semiconductor layer 15, respectively.

In addition, a planarization layer 27 having a drain contact hole 30 exposing the drain electrode 25 is disposed on the source and drain electrodes 23 and 25 .

At this time, the first electrode 29 is disposed on the planarization layer 27 and is electrically connected to the drain electrode 25 through the drain contact hole 30 .

In addition, the light blocking film 50 is disposed under the oxide semiconductor layer 15 in correspondence with the oxide semiconductor layer 15, and the buffer layer 13 is interposed between the light blocking film 50 and the oxide semiconductor layer 15.

In addition, although not shown in the drawings, an organic layer (not shown) is disposed on the first electrode 29, and a second electrode (not shown) is disposed on the organic layer (not shown).

Here, the organic layer (not shown) includes a hole injection layer (HIL), a hole transport layer (HTL), and an emission material layer (EML).

In this case, the organic layer (not shown) may be formed through a soluble process or a deposition process.

On the other hand, all organic layers (not shown) may be formed by a solution process, but each layer constituting the organic layer (not shown) may have a problem in that a solution process is impossible due to poor material stability. In particular, the blue light emitting layer material In the case of the solution process, sufficient performance is not obtained when applied to a display device, and recently, a method of separately applying the formation process of the blue light emitting layer and the red and green light emitting layers has been proposed.

For example, there is a method in which the hole injection layer, the hole transport layer, the red light emitting layer and the green light emitting layer are formed through a solution process, and the blue light emitting layer is formed through a deposition process.

However, this method has a problem in that the color purity of the blue light emitting layer is lowered because the blue light emitting layer is formed in a process different from that of the red and green light emitting layers.

An object of the present invention is to provide an organic light emitting diode and a manufacturing method thereof capable of preventing a decrease in color purity of a light emitting layer and improving display quality.

The present invention for achieving the above object is a substrate including a pixel region each defining at least three or more subpixels emitting different colors and a bank region surrounding the pixel region, and disposed on the substrate An insulating layer having an opening in the pixel area, a thin film transistor disposed in a bank area on the substrate, a color filter disposed in the opening, a planarization layer disposed on the thin film transistor and the color filter, and an upper portion of the planarization layer disposed in the pixel area. and a first electrode connected to the thin film transistor, and a bank covering an edge of the first electrode and disposed above a planarization layer in a bank region.

In addition, the color filter is any one of red, green, or blue color filters, and the insulating layer includes a buffer layer, a gate insulating layer, and an interlayer insulating layer sequentially stacked on the substrate.

In addition, an insulating layer is formed on a substrate including a pixel region defining at least three or more subpixels emitting different colors, and a bank region surrounding the pixel region, and thin film transistors are formed on the substrate of the bank region. forming an opening exposing the substrate of the pixel area by removing the insulating layer of the pixel area, forming a color filter on the substrate exposed by the opening, and flattening the top of the thin film transistor and the color filter. forming a layer, forming a first electrode connected to the thin film transistor on top of the planarization layer in the pixel region, and forming a bank on the planarization layer in the bank region while covering an edge of the first electrode. A manufacturing method of an organic light emitting diode display is provided.

Also, forming the insulating layer includes sequentially forming a buffer layer, a gate insulating film, and an interlayer insulating film on the substrate.

Also, the opening is formed in the step of forming the oxide semiconductor layer and the step of forming the semiconductor contact hole.

The present invention has an effect of preventing a decrease in color purity of the light emitting layer by disposing a color filter in an opening provided in an insulating layer.

In addition, it is possible to improve display quality by preventing a difference in thickness between the organic layers formed in the pixel area where the color filter is disposed and the pixel area where the color filter is not disposed.

In addition, by forming the opening together with the formation of the oxide semiconductor layer or the semiconductor contact hole, there is an effect of reducing manufacturing cost by reducing the number of manufacturing processes.

1 is a plan view illustrating a conventional organic light emitting diode display.
FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1 .
3 is a plan view illustrating an organic light emitting diode display device according to a first embodiment of the present invention.
4 is a cross-sectional view taken along line IV-IV of FIG. 3 .
5 is a plan view illustrating an organic light emitting diode display device according to a second exemplary embodiment of the present invention.
FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. 5 .
7A to 7H are diagrams illustrating step-by-step manufacturing processes of an organic light emitting diode display according to a second embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First Embodiment>

FIG. 3 is a plan view showing an organic light emitting diode display device according to a first embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 3 .

As shown in FIG. 3, the organic light emitting diode display device according to the first embodiment of the present invention has a pixel area PA each defining at least three or more subpixels emitting different colors and each pixel area PA ), the substrate 101 including the bank area BA surrounding the substrate 101, the first electrode 129 disposed in each pixel area PA on the substrate 101, and covering the edge of the first electrode 129 A bank 131 disposed in the bank area BA on the first substrate 101 is included.

Specifically, as shown in FIG. 4, the organic light emitting diode display device according to the first embodiment of the present invention includes insulating layers 113, 117, and 121 disposed on a substrate 101, an insulating layer 113, 117 and 121), a planarization layer 127 disposed on the thin film transistor Tr, and a first electrode 129 connected to the thin film transistor Tr.

In addition, the insulating layers 113, 117, and 121 are disposed in the pixel area PA and the bank area BA, and the buffer layer 113, the gate insulating film 117, and the interlayer insulating film sequentially stacked on the substrate 101 (121).

In addition, the thin film transistor Tr is disposed in the bank region BA, and the oxide semiconductor layer 115 disposed on the substrate 101, the gate insulating film 117 covering the oxide semiconductor layer 115, and the oxide semiconductor A gate electrode 119 disposed above the gate insulating film 117 corresponding to the layer 115, an interlayer insulating film 121 covering the gate electrode 119, and a source and drain electrode disposed above the interlayer insulating film 121 (123, 125).

At this time, the gate insulating film 117 and the interlayer insulating film 121 have semiconductor contact holes 128 exposing both sides 115b of the oxide semiconductor layer 115, and the source and drain electrodes 123 and 125 are semiconductor They are connected to both sides 115b of the oxide semiconductor layer 115 through the contact hole 128 .

In addition, a planarization layer 127 having a drain contact hole 130 exposing the drain electrode 125 is disposed on the source and drain electrodes 123 and 125 .

In addition, the first electrode 129 is disposed above the planarization layer 127 of the pixel area PA, and is the drain electrode ( 125) and electrically connected.

In addition, the light blocking film 150 is disposed under the oxide semiconductor layer 115 in correspondence with the oxide semiconductor layer 115, and the buffer layer 113 is interposed between the light blocking film 150 and the oxide semiconductor layer 115.

In addition, although not shown in the drawings, an organic layer (not shown) is disposed on the first electrode 129, and a second electrode (not shown) is disposed on the organic layer (not shown).

Here, the organic layer (not shown) includes a hole injection layer (HIL), a hole transport layer (HTL), and an emission material layer (EML).

In this case, the organic layer (not shown) may be formed through a soluble process or a deposition process.

On the other hand, all organic layers (not shown) may be formed by a solution process, but each layer constituting the organic layer (not shown) may have a problem in that a solution process is impossible due to poor material stability. In particular, the blue light emitting layer material In the case of the solution process, sufficient performance is not obtained when applied to a display device, and recently, a method of separately applying the formation process of the blue light emitting layer and the red and green light emitting layers has been proposed.

For example, there is a method in which the hole injection layer, the hole transport layer, the red light emitting layer and the green light emitting layer are formed through a solution process, and the blue light emitting layer is formed through a deposition process.

In applying this method, the organic light emitting diode display device according to the first embodiment of the present invention has a blue color filter 170 on the insulating layers 113, 117, and 121 of the pixel area PA on the substrate 101. ), it is possible to prevent a phenomenon in which the color purity of the blue light emitting layer is lowered.

Meanwhile, the color filter 170 may not be disposed only on the blue light emitting layer formed by the deposition process, and a red color filter or green color filter may be disposed on the red light emitting layer or the green light emitting layer formed by the deposition process to improve the color purity of the red light emitting layer or the green light emitting layer. can be further improved.

Similarly, red, green, and blue color filters 170 may be disposed on the red light emitting layer, the green light emitting layer, and the blue light emitting layer formed by the solution process, respectively, to further improve the color purity of these light emitting layers.

Meanwhile, when the planarization layer 127 covers the insulating layers 113, 117, and 121, the color filter 170, and the thin film transistor Tr, the pixel area PA in which the color filter 170 is not disposed is planarized. Although the layer 127 is planarized, in the case of the pixel area PA where the color filter 170 is disposed, the planarization layer 127 is not planarized and a step is generated.

That is, in the case of the pixel area PA where the color filter 170 is disposed, the thickness d1 of the color filter 170 disposed on the insulating layers 113, 117, and 121 is equal to the thickness d1 of the insulating layers 113, 117, and 121. Since the thickness of the thin film transistor Tr protrudes upward, the planarization layer 127 disposed above the color filter 170 has a protruding shape compared to the planarization layer 127 disposed above the thin film transistor Tr. do.

Due to the planarization layer 127 having such a step, the bank 131 surrounding the pixel area PA on which the color filter 170 is disposed also has a step, and the color filter 170 is disposed on the pixel area PA. The bank 131 of the area PA and the bank 131 of the pixel area PA on which the color filter 170 is not disposed have different sidewall thicknesses d2 and d3.

For this reason, when the hole injection layer and the hole transport layer are formed in all pixel areas PA by a solution process, the pixel area PA where the color filter 170 is disposed and the pixel area where the color filter 170 is not disposed ( A difference in the thickness of organic layers (not shown) formed on each PA) may cause deterioration in display quality of the organic light emitting diode display.

<Second Embodiment>

FIG. 5 is a plan view illustrating an organic light emitting diode display device according to a second exemplary embodiment of the present invention, and FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. 5 .

As shown in FIG. 5, the organic light emitting diode display device according to the second embodiment of the present invention has a pixel area PA each defining at least three or more sub-pixels emitting different colors, and each pixel area PA ), the substrate 201 including the bank area BA surrounding the substrate 201, the first electrode 229 disposed in each pixel area PA on the substrate 201, and covering the edge of the first electrode 229. A bank 231 disposed in the bank area BA on the first substrate 201 is included.

Specifically, as shown in FIG. 6, the organic light emitting diode display device according to the second embodiment of the present invention includes insulating layers 213, 217, and 221 disposed on a substrate 201, an insulating layer 213, 217 and 221), a planarization layer 227 disposed on the thin film transistor Tr, and a first electrode 229 connected to the thin film transistor Tr.

In addition, the insulating layers 213, 217, and 221 include a buffer layer 213, a gate insulating film 217, and an interlayer insulating film 221 sequentially stacked on the substrate 201, and the pixel region on the substrate 201 ( In the PA), the buffer layer 213, the gate insulating layer 217, and the interlayer insulating layer 221 are removed to have an opening 280.

In addition, the insulating layers 213 , 217 , and 221 may have the opening 280 only in one of the pixel areas PA defining at least three or more subpixels emitting different colors.

In addition, the thin film transistor Tr is disposed in the bank region BA, and the oxide semiconductor layer 215 disposed on the substrate 201, the gate insulating film 217 covering the oxide semiconductor layer 215, and the oxide semiconductor A gate electrode 219 disposed above the gate insulating film 217 corresponding to the layer 215, an interlayer insulating film 221 covering the gate electrode 219, and a source and drain electrode disposed above the interlayer insulating film 221 (223, 225).

At this time, the gate insulating film 217 and the interlayer insulating film 221 have semiconductor contact holes 228 exposing both sides 215b of the oxide semiconductor layer 215, and the source and drain electrodes 223 and 225 are semiconductor Both sides 215b of the oxide semiconductor layer 215 are respectively connected through the contact hole 228 .

In addition, a planarization layer 227 having a drain contact hole 230 exposing the drain electrode 225 is disposed on the source and drain electrodes 223 and 225 .

In addition, the first electrode 229 is disposed on the planarization layer 227 of the pixel area PA, and is the drain electrode ( 225) and electrically connected.

In addition, the light blocking film 250 is disposed under the oxide semiconductor layer 215 in correspondence with the oxide semiconductor layer 215, and the buffer layer 213 is interposed between the light blocking film 250 and the oxide semiconductor layer 215.

In addition, although not shown in the drawing, an organic layer (not shown) is disposed on the first electrode 229, and a second electrode (not shown) is disposed on the organic layer (not shown).

Here, the organic layer (not shown) includes a hole injection layer (HIL), a hole transport layer (HTL), and an emission material layer (EML).

In this case, the organic layer (not shown) may be formed through a soluble process or a deposition process.

On the other hand, all organic layers (not shown) may be formed by a solution process, but each layer constituting the organic layer (not shown) may have a problem in that a solution process is impossible due to poor material stability. In particular, the blue light emitting layer material In the case of the solution process, sufficient performance is not obtained when applied to a display device, and recently, a method of separately applying the formation process of the blue light emitting layer and the red and green light emitting layers has been proposed.

For example, there is a method in which the hole injection layer, the hole transport layer, the red light emitting layer and the green light emitting layer are formed through a solution process, and the blue light emitting layer is formed through a deposition process.

In applying this method, the organic light emitting diode display device according to the second embodiment of the present invention arranges the blue color filter 270 in the opening 280 provided in the insulating layers 213, 217, and 221, It is possible to prevent a phenomenon in which the color purity of the blue light emitting layer is lowered.

Meanwhile, the color filter 270 may not be disposed only on the blue light emitting layer formed through the deposition process, and a red color filter or green color filter may be disposed on the red light emitting layer or the green light emitting layer formed through the deposition process to improve the color purity of the red light emitting layer or the green light emitting layer. can be further improved.

Similarly, red, green, and blue color filters 270 may be disposed on the red light emitting layer, the green light emitting layer, and the blue light emitting layer formed by the solution process, respectively, to further improve the color purity of these light emitting layers.

In addition, unlike the first embodiment of the present invention in which the color filter (170 in FIG. 4) is disposed on the insulating layer (113, 117, and 121 in FIG. 4), the second embodiment of the present invention has a color filter (270) As is disposed in the opening 280 provided in the insulating layers 213, 217, and 221 on the substrate 201, the planarization layer 227 is formed by insulating the insulating layers 213, 217, and 221, the color filter 270 and the thin film. When covering the transistor Tr, not only the planarization layer 227 of the pixel area PA where the color filter 270 is not disposed, but also the planarization layer 227 of the pixel area PA where the color filter 270 is disposed. It is flattened without step difference.

That is, as the opening 280 is formed by removing the insulating layers 213, 217, and 221 on the substrate 201 of the pixel area PA, and the color filter 270 is disposed in the opening 280, the removed The thickness d3 of the color filter 270 protruding above the insulating layers 213 , 217 , and 221 is reduced by the thickness d1 of the insulating layers 213 , 217 , and 221 .

For example, the thicknesses of the buffer layer 213, the gate insulating layer 217, and the interlayer insulating layer 221 included in the insulating layers 213, 217, and 221 are formed to be about 0.4 μm, 0.35 μm, and 0.6 μm, respectively, and a color filter. The thickness d2 of 270 is formed to be about 2.2 μm. As the color filter 270 is disposed on the substrate 201 from which the insulating layers 213, 217, and 221 are removed, the insulating layers 213, 217, and 221 ) The thickness d3 of the color filter 270 protruding upward is about 0.85 μm, so that when the flattening layer 227 covers the color filter 270, 90% or more of normal flatness can be secured.

That is, the thickness d3 of the color filter 270 protruding above the insulating layers 213, 217, and 221 becomes similar to the thickness of the thin film transistor Tr protruding above the insulating layers 213, 217, and 221. Accordingly, the planarization layer 227 disposed on the thin film transistor Tr and the color filter 270 is planarized.

Due to the flattening layer 227 flattened as described above, the bank 231 disposed surrounding the pixel area PA on which the color filter 270 is disposed is flattened, and the pixel area PA on which the color filter 270 is disposed The bank 231 of ) and the bank 231 of the pixel area PA on which the color filter 270 is not disposed have the same thicknesses d4 and d5 of their sidewalls.

For this reason, when the hole injection layer and the hole transport layer are formed in all pixel areas PA by a solution process, the pixel area PA where the color filter 270 is disposed and the pixel area where the color filter 270 is not disposed ( A difference in the thickness of the organic layers (not shown) formed on the PA) is not generated, so that the display quality of the organic light emitting diode display can be prevented from deteriorating.

7A to 7H are diagrams illustrating step-by-step manufacturing processes of an organic light emitting diode display according to a second embodiment of the present invention.

As shown in the drawing, the method of manufacturing an organic light emitting diode display according to the present invention includes forming insulating layers 213, 217, and 221 and a thin film transistor Tr, forming an opening 280, The steps of forming the color filter 270 , forming the planarization layer 227 , forming the first electrode 229 , and forming the bank 231 are included.

Specifically, as shown in FIGS. 7A to 7D , a pixel area PA each defining at least three or more sub-pixels emitting different colors and a bank area BA surrounding the pixel area PA are provided. Insulating layers 213, 217, and 221 are formed on the substrate, and thin film transistors Tr including the insulating layers 213, 217, and 221 are formed on the substrate 201 in the bank area BA. .

At this time, the insulating layers 213 , 217 , and 221 include a buffer layer 213 , a gate insulating film 217 , and an interlayer insulating film 221 sequentially formed on the substrate 201 .

In the thin film transistor Tr, an oxide semiconductor layer 215 is formed on the buffer layer 213, a gate electrode 219 is formed on the gate insulating film 217 corresponding to the oxide semiconductor layer 215, and a gate Semiconductor contact holes 228 exposing both sides 215b of the oxide semiconductor layer are formed in the insulating film 217 and the interlayer insulating film 221, and are respectively connected to both sides 215b of the oxide semiconductor layer through the semiconductor contact hole 228. Source and drain electrodes 223 and 225 are formed.

Meanwhile, a light blocking film 250 may be formed between the buffer layer 213 and the oxide semiconductor layer 215 to correspond to the oxide semiconductor layer 215 to protect the oxide semiconductor layer 215 from external light.

In addition, the insulating layers 213 , 217 , and 221 of the pixel area PA are removed to form an opening 280 exposing the substrate 201 of the pixel area PA.

In addition, the opening 280 may be formed only in one of the pixel areas PA each defining at least three or more subpixels emitting different colors.

At this time, the opening 280 is formed in the step of forming the oxide semiconductor layer 215 and the step of forming the semiconductor contact hole 228 together.

Specifically, first, as shown in FIGS. 7A and 7B, a buffer layer 213 and an oxide semiconductor material layer (not shown) are stacked on a substrate 201, and a transflective mask is used when patterning the oxide semiconductor layer 215. Also, the first opening 280a is formed in the buffer layer 213 corresponding to the pixel area PA.

Next, as shown in FIGS. 7C and 7D, a gate insulating film 217 and an interlayer insulating film 221 are stacked on a substrate 201, and a semiconductor contact provided on the gate insulating film 217 and the interlayer insulating film 221 is formed. When the hole 228 is formed, the second opening 280b is formed in the gate insulating layer 217 and the interlayer insulating layer 221 to correspond to the pixel area PA.

Meanwhile, unlike the drawing, the first opening 280a may not be formed when the oxide semiconductor layer 215 is patterned, but may be formed together with the second opening 280b when the semiconductor contact hole 228 is formed.

As described above, since the first and second openings 280a and 280b are formed together with the oxide semiconductor layer 215 or the semiconductor contact hole 228, a separate mask process is not required, reducing the number of manufacturing processes and reducing manufacturing cost. can do.

Next, as shown in FIGS. 7E and 7G , a color filter 270 is formed on the substrate 201 exposed by the opening 280, and the top of the thin film transistor Tr and the color filter 270 are planarized. A layer 227 is formed, and a first electrode 229 connected to the thin film transistor Tr is formed on the planarization layer 227 of the pixel area PA.

At this time, a planarization layer 227 is disposed on the source and drain electrodes 223 and 225 of the thin film transistor Tr, and the drain electrode 225 uses the drain contact hole 230 provided in the planarization layer 227. It is electrically connected to the first electrode 229 through.

Next, as shown in FIG. 7H , a bank 231 is formed on the planarization layer 227 of the bank area BA while covering the edge of the first electrode 229 .

Next, although not shown in the figure, an organic layer (not shown) is formed on the first electrode 229, and a second electrode (not shown) is formed on the organic layer (not shown).

Here, the organic layer (not shown) includes a hole injection layer (HIL), a hole transport layer (HTL), and an emission material layer (EML).

In this case, the organic layer (not shown) may be formed through a soluble process or a deposition process.

On the other hand, all organic layers (not shown) may be formed by a solution process, but each layer constituting the organic layer (not shown) may have a problem in that a solution process is impossible due to poor material stability. In particular, the blue light emitting layer material In the case of the solution process, sufficient performance is not obtained when applied to a display device, and recently, a method of separately applying the formation process of the blue light emitting layer and the red and green light emitting layers has been proposed.

For example, there is a method in which the hole injection layer, the hole transport layer, the red light emitting layer and the green light emitting layer are formed through a solution process, and the blue light emitting layer is formed through a deposition process.

In applying such a method, in the method of manufacturing an organic light emitting diode display according to the second embodiment of the present invention, a blue color filter 270 is provided in the openings 280 provided in the insulating layers 213, 217, and 221. By arranging it, it is possible to prevent a phenomenon in which the color purity of the blue light emitting layer is lowered.

Meanwhile, the color filter 270 may not be disposed only on the blue light emitting layer formed through the deposition process, and a red color filter or green color filter may be disposed on the red light emitting layer or the green light emitting layer formed through the deposition process to improve the color purity of the red light emitting layer or the green light emitting layer. can be further improved.

Similarly, red, green, and blue color filters 270 may be disposed on the red light emitting layer, the green light emitting layer, and the blue light emitting layer formed by the solution process, respectively, to further improve the color purity of these light emitting layers.

In addition, unlike the first embodiment of the present invention in which the color filter (170 in FIG. 4) is disposed on the insulating layer (113, 117, and 121 in FIG. 4), the second embodiment of the present invention has a color filter (270) As is disposed on the substrate 201 exposed by the opening 280 provided in the insulating layers 213, 217, and 221, the planarization layer 227 is formed on the insulating layers 213, 217, and 221, the color filter ( 270) and the thin film transistor Tr, the planarization layer 227 of the pixel area PA on which the color filter 270 is not disposed as well as the planarization layer of the pixel area PA on which the color filter 270 is disposed. (227) is flattened without a step.

That is, the insulating layers 213, 217, and 221 on the substrate 201 of the pixel area PA are removed to form the opening 280, and the color filter ( 270), the thickness d3 of the color filter 270 protruding above the insulating layers 213, 217, and 221 is reduced by the thickness d1 of the removed insulating layers 213, 217, and 221. do.

For example, the thicknesses of the buffer layer 213, the gate insulating layer 217, and the interlayer insulating layer 221 included in the insulating layers 213, 217, and 221 are formed to be about 0.4 μm, 0.35 μm, and 0.6 μm, respectively, and a color filter. The thickness d2 of 270 may be formed to be about 2.2 μm. As the color filter 270 is disposed on the substrate 201 from which the insulating layers 213, 217, and 221 are removed, the insulating layers 213, 217 , 221) The thickness d3 of the color filter 270 protruding upward is about 0.85 μm, so that when the flattening layer 227 covers the color filter 270, 90% or more of normal flatness can be secured.

That is, the thickness d3 of the color filter 270 protruding above the insulating layers 213, 217, and 221 becomes similar to the thickness of the thin film transistor Tr protruding above the insulating layers 213, 217, and 221. Accordingly, the planarization layer 227 covering the upper portions of the thin film transistor Tr and the color filter 270 is planarized.

Due to the flattening layer 227 flattened as described above, the bank 231 disposed surrounding the pixel area PA on which the color filter 270 is disposed is flattened, and the pixel area PA on which the color filter 270 is disposed The bank 231 of ) and the bank 231 of the pixel area PA on which the color filter 270 is not disposed have the same thicknesses d4 and d5 of their sidewalls.

For this reason, when the hole injection layer and the hole transport layer are formed in all pixel areas PA by a solution process, the pixel area PA where the color filter 270 is disposed and the pixel area where the color filter 270 is not disposed ( A difference in the thickness of the organic layers (not shown) formed on the PA) is not generated, so that the display quality of the organic light emitting diode display can be prevented from deteriorating.

The present invention is not limited to the above-described embodiments, and various changes and modifications are possible without departing from the spirit of the present invention.

201: Substrate
229: first electrode
231: bank
270: color filter
280: opening

Claims (16)

a substrate including a pixel region each defining at least three or more sub-pixels emitting different colors and a bank region surrounding the pixel region;
an insulating layer disposed on the substrate and having an opening in the pixel region;
a thin film transistor disposed in the bank area on the substrate;
a color filter disposed in the opening;
a planarization layer disposed on the thin film transistor and the color filter;
a first electrode disposed on the planarization layer of the pixel region and connected to the thin film transistor; and
a bank covering an edge of the first electrode and disposed above the planarization layer in the bank region;
wherein the insulating layer has the opening in only one of the pixel regions defining at least three or more sub-pixels emitting different colors, respectively.

delete According to claim 1
The color filter is any one of a red, green or blue color filter, the organic light emitting diode display device.
According to claim 3,
The insulating layer includes a buffer layer, a gate insulating film, and an interlayer insulating film sequentially stacked on the substrate.
According to claim 4,
The thin film transistor is
an oxide semiconductor layer disposed on the buffer layer;
a gate electrode disposed over the gate insulating layer corresponding to the oxide semiconductor layer; and
a source and a drain electrode disposed on the interlayer insulating film and connected to both sides of the oxide semiconductor layer through semiconductor contact holes provided in the gate insulating film and the interlayer insulating film;
The planarization layer is disposed on the source and drain electrodes, and the drain electrode is electrically connected to the first electrode through a drain contact hole provided in the planarization layer.
According to claim 5,
an organic layer disposed on the first electrode; and
A second electrode disposed on the organic layer
An organic light emitting diode display device further comprising a.
An insulating layer is formed on a substrate including a pixel region defining at least three or more subpixels emitting different colors, and a bank region surrounding the pixel region, and thin film transistors are formed on the substrate in the bank region. forming;
forming an opening exposing the substrate in the pixel area by removing the insulating layer in the pixel area;
forming a color filter on the substrate exposed by the opening;
forming a planarization layer on the thin film transistor and the color filter;
forming a first electrode connected to the thin film transistor on top of the planarization layer in the pixel region; and
forming a bank on top of the planarization layer in the bank region while covering an edge of the first electrode;
The manufacturing method of claim 1 , wherein the opening is formed only in one of the pixel regions defining at least three or more sub-pixels emitting different colors.

delete According to claim 7,
The forming of the insulating layer includes sequentially forming a buffer layer, a gate insulating film, and an interlayer insulating film on the substrate.
According to claim 9,
Forming the thin film transistor,
forming an oxide semiconductor layer on top of the buffer layer;
forming a gate electrode on the gate insulating layer corresponding to the oxide semiconductor layer;
forming semiconductor contact holes exposing both sides of the oxide semiconductor layer in the gate insulating layer and the interlayer insulating layer; and
forming source and drain electrodes respectively connected to both sides of the oxide semiconductor layer through the semiconductor contact hole;
The planarization layer is disposed on the source and drain electrodes, and the drain electrode is electrically connected to the first electrode through a drain contact hole provided in the planarization layer.
According to claim 10,
The opening is formed in the steps of forming the oxide semiconductor layer and forming the semiconductor contact hole.
According to claim 11,
The buffer layer of the pixel region is removed in the step of forming the oxide semiconductor layer, and the gate insulating layer and the interlayer insulating layer in the pixel region are removed in the step of forming the semiconductor contact hole.
According to claim 12,
forming an organic layer on the first electrode; and
Forming a second electrode on the organic layer
A method of manufacturing an organic light emitting diode display device further comprising a.
According to claim 13,
The method of manufacturing an organic light emitting diode display device in which the organic layer is formed through a deposition process or a solution process. delete a substrate including first subpixels, second subpixels, and third subpixels emitting different colors;
an insulating layer disposed on the substrate and having first to third openings in each of the first to third subpixels;
a red color filter, a green color filter, and a blue color filter disposed in each of the first to third openings;
a planarization layer disposed on the red, green, and blue color filters;
And a first electrode disposed on the planarization layer,
A thickness of each of the red, green, and blue color filters is greater than a thickness of the insulating layer.

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