KR102480087B1 - Apparatus for manufacturing a display apparatus - Google Patents

Abstract

Disclosed is an apparatus for manufacturing a display device. The present invention provides an inorganic film nozzle unit for forming an inorganic film on a display substrate, an organic film nozzle unit arranged in-line with the inorganic film nozzle unit and forming an organic film on the inorganic film, and the inorganic film nozzle unit. An exhaust unit disposed between the organic film nozzle units to suck in and exhaust gas to the outside, wherein the inorganic film nozzle unit is disposed to be spaced apart from a reaction gas nozzle unit supplying a reaction gas and the reaction gas nozzle unit to source a source a source gas nozzle unit for supplying gas, a barrier gas separated from the reaction gas nozzle unit and the source gas nozzle unit, and disposed adjacent to a side surface of at least one of the reaction gas nozzle unit and the source gas nozzle unit; It includes a barrier gas nozzle to supply.

Description

Apparatus for manufacturing a display apparatus {Apparatus for manufacturing a display apparatus}

Embodiments of the present invention relate to devices, and more particularly, to manufacturing devices for display devices.

Electronic devices based on mobility are widely used. As a mobile electronic device, a tablet PC has recently been widely used in addition to a small electronic device such as a mobile phone.

Such a mobile electronic device includes a display unit to provide visual information such as images or videos to users in order to support various functions. Recently, as other components for driving the display have been miniaturized, the proportion of the display in electronic devices has gradually increased, and a structure capable of being bent to have a predetermined angle in a flat state has also been developed.

In the case of a manufacturing apparatus for a liquid-cooled display device, the process may be complex because the inorganic film and the organic film cannot be formed in one chamber, and the configuration of the nozzle forming the inorganic film is fixed, so that the thin film encapsulation layer is separately equipped to reinforce the performance. Embodiments of the present invention in order to solve the problem of designing a display device capable of freely designing an arrangement of nozzles and improving the performance of a thin film encapsulation layer are provided.

An embodiment of the present invention includes an inorganic film nozzle unit for forming an inorganic film on a display substrate, an organic film nozzle unit arranged in-line with the inorganic film nozzle unit and forming an organic film on the inorganic film, and the inorganic film nozzle unit for forming an organic film on the inorganic film. An exhaust part disposed between the nozzle part and the organic film nozzle part to suck in and exhaust gas to the outside, wherein the inorganic film nozzle part is spaced apart from a reaction gas nozzle part for supplying a reaction gas and the reaction gas nozzle part. A source gas nozzle part disposed to supply a source gas, separated from the reaction gas nozzle part and the source gas nozzle part, and disposed adjacent to a side surface of at least one of the reaction gas nozzle part and the source gas nozzle part An apparatus for manufacturing a display device including a barrier gas nozzle unit for supplying a barrier gas is disclosed.

In this embodiment, at least one of the reaction gas, the barrier gas, and the source gas is exhausted through at least one of between the reaction gas nozzle unit and the barrier gas nozzle unit and between the barrier gas nozzle unit and the source gas nozzle unit. It can be.

In this embodiment, a plurality of the reactive gas nozzles, the source gas nozzles, and the barrier gas nozzles are provided, respectively, and the plurality of reactive gas nozzles, the plurality of source gas nozzles, and the plurality of barrier gas nozzles are provided. The units are arranged in a line, and two of the plurality of reaction gas nozzle units may be disposed outside the plurality of source gas nozzle units.

In this embodiment, a plurality of the reaction gas nozzles and the source gas nozzles are provided, and each of the reaction gas nozzles and the source gas nozzles may be sequentially and repeatedly arranged.

In this embodiment, the reactive gas nozzle unit may include a reactive gas nozzle support portion seated on the barrier gas nozzle portion, and a reactive gas nozzle ejection portion connected to the reactive gas nozzle support portion and injecting the reactive gas to the outside. can

In this embodiment, it may include a first movement passage through which at least one of the reaction gas and the barrier gas flows.

In this embodiment, the source gas nozzle unit may include a source gas nozzle support unit seated on the barrier gas nozzle unit, and a source gas nozzle ejection unit connected to the source gas nozzle support unit and injecting the source gas to the outside. can

In the present embodiment, the source gas nozzle support may include a second movement passage through which at least one of the source gas and the barrier gas flows.

In this embodiment, a plurality of barrier gas nozzle units are provided, and at least two of the plurality of barrier gas nozzle units may be disposed between the reaction gas nozzle unit and the source gas nozzle unit.

In this embodiment, a barrier gas exhaust unit disposed between the at least two or more barrier gas nozzle units disposed between the reaction gas nozzle unit and the source gas nozzle unit may be further included.

In this embodiment, the exhaust unit may be disposed outside at least one of the inorganic film nozzle part and the organic film nozzle part.

In this embodiment, a purge gas nozzle part disposed outside at least one of the inorganic film nozzle part and the organic film nozzle part may be further included.

In this embodiment, the inorganic film nozzle unit, the organic film nozzle unit, and the exhaust unit may further include a chamber disposed therein.

In this embodiment, the inorganic film nozzle unit, the organic film nozzle unit, and the exhaust unit may further include a transfer unit disposed to face the display substrate.

Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims and detailed description of the invention.

These general and specific aspects may be practiced using a system, method, computer program, or any combination of systems, methods, or computer programs.

Manufacturing time and manufacturing cost can be reduced by forming the thin film encapsulation layer in an in-line form according to the embodiments of the present invention. In addition, the embodiments of the present invention are designed to replace each nozzle, so that easy nozzle replacement is possible.

Embodiments of the present invention form an exhaust gas between each nozzle, thereby minimizing the mixing of gases injected from each nozzle, thereby forming a high-quality thin film protective layer. In addition, embodiments of the present invention can freely arrange each nozzle by replacing each nozzle.

1 is a conceptual diagram illustrating an apparatus for manufacturing a display device according to an exemplary embodiment of the present invention.
FIG. 2 is a cross-sectional perspective view showing an embodiment of a nozzle unit and an exhaust unit shown in FIG. 1 .
FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2 .
FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2 .
5 is a cross-sectional perspective view illustrating a nozzle unit and an exhaust unit of a manufacturing apparatus for a display device according to another exemplary embodiment of the present invention.
FIG. 6 is a cross-sectional view taken along line IV-IV of FIG. 5 .
7 is a bottom view showing a bottom surface of the nozzle unit shown in FIG. 5;
FIG. 8 is a plan view illustrating a display device manufactured through the display device manufacturing apparatus shown in FIG. 1 .
FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 8 .

Since the present invention can apply various transformations and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and methods for achieving them will become clear with reference to the embodiments described later in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding components are assigned the same reference numerals, and overlapping descriptions thereof will be omitted. .

In the following embodiments, terms such as first and second are used for the purpose of distinguishing one component from another component without limiting meaning.

In the following examples, expressions in the singular number include plural expressions unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have mean that features or components described in the specification exist, and do not preclude the possibility that one or more other features or components may be added.

In the following embodiments, when a part such as a film, region, component, etc. is said to be on or on another part, not only when it is directly above the other part, but also when another film, region, component, etc. is interposed therebetween. Including if there is

In the drawings, the size of components may be exaggerated or reduced for convenience of explanation. For example, since the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, the present invention is not necessarily limited to the illustrated bar.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to the three axes of the Cartesian coordinate system, and may be interpreted in a broad sense including these. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

When an embodiment is otherwise implementable, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order reverse to the order described.

1 is a conceptual diagram illustrating an apparatus for manufacturing a display device according to an exemplary embodiment of the present invention. FIG. 2 is a cross-sectional perspective view showing an embodiment of a nozzle unit and an exhaust unit shown in FIG. 1 . FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2 . FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2 .

1 to 4 , the display device manufacturing apparatus 10 may include a loading unit 100, an encapsulation layer forming unit 200, an unloading unit 300, and a protective layer forming unit 400. there is.

The encapsulation layer forming unit 200 may include a chamber 210 , a nozzle unit 220 , an exhaust unit 230 and a transfer unit 240 .

The chamber 210 may be connected to the loading unit 100 and the unloading unit 300 . At this time, gate valves (not shown) may be installed between the chamber 210 and the loading unit 100 and between the chamber 210 and the unloading unit 300 .

A space may be formed inside the chamber 210 , and a nozzle unit 220 , a part of the exhaust unit 230 , and a transfer unit 240 may be disposed.

The nozzle unit 220 may include an inorganic layer nozzle unit 221 for forming an inorganic layer on the display substrate D and an organic layer nozzle unit 225 for forming an organic layer on the inorganic layer. In addition, the nozzle unit 220 may include a purge gas nozzle unit 226 for injecting a purge gas onto the display substrate D.

At least one of the inorganic film nozzle unit 221, the organic film nozzle unit 225, and the purge gas nozzle unit 226 may be provided in plurality. Hereinafter, for convenience of explanation, a case in which only one inorganic film nozzle part 221 and one organic film nozzle part 225 is provided and two purge gas nozzle parts 226 will be described in detail.

The inorganic film nozzle unit 221 may include a reaction gas nozzle unit 221a, a source gas nozzle unit 221b, and a barrier gas nozzle unit 221c. At this time, at least one of the reaction gas nozzle unit 221a, the source gas nozzle unit 221b, and the barrier gas nozzle unit 221c may be provided in plurality. For example, only one source gas nozzle unit 221b may be provided, and a plurality of reaction gas nozzle units 221a and barrier gas nozzle units 221c may be provided. In another embodiment, it is also possible to provide a plurality of reaction gas nozzle units 221a, source gas nozzle units 221b, and barrier gas nozzle units 221c, respectively. Hereinafter, for convenience of description, a case in which a plurality of reaction gas nozzles 221a, source gas nozzles 221b, and barrier gas nozzles 221c are respectively provided will be described in detail.

The plurality of reaction gas nozzle parts 221a, the plurality of source gas nozzle parts 221b, and the plurality of barrier gas nozzle parts 221c may be arranged in line (or in a line). In particular, each reaction gas nozzle unit 221a and each barrier gas nozzle unit 221c may be alternately arranged to be spaced apart from each other. At this time, each barrier gas nozzle unit 221c may be arranged on at least one side of the reaction gas nozzle unit 221a and the source gas nozzle unit 221b. That is, each barrier gas nozzle unit 221c may be disposed between the reaction gas nozzle unit 221a and the source gas nozzle unit 221b. In addition, the barrier gas nozzle unit 221c may be disposed on the side of the reaction gas nozzle unit 221a and the side of the source gas nozzle unit 221b, not between the reaction gas nozzle unit 221a and the source gas nozzle unit 221b. can

When the plurality of reaction gas nozzle parts 221a, the plurality of source gas nozzle parts 221b, and the plurality of barrier gas nozzle parts 221c are arranged as described above, at least one of the plurality of reaction gas nozzle parts 221a is formed at the outermost part. Two can be placed. That is, two of the plurality of reactive gas nozzle parts 221a may be disposed at the outermost part of the inorganic film nozzle part 221 as shown in FIG. 1 .

The reaction gas nozzle part 221a may include a reaction gas nozzle support part 221a-a seated on the barrier gas nozzle part 221c. At this time, the part of the barrier gas nozzle part 221c where the reaction gas nozzle support part 221a-a is disposed protrudes toward the reaction gas nozzle part 221a, so that the reaction gas nozzle support part 221a-a can be seated.

The reaction gas nozzle part 221a is connected to the reaction gas nozzle support part 221a-a and may include a reaction gas nozzle ejection part 221a-b for supplying a reaction gas. At this time, the width of the reaction gas nozzle ejection portion 221a-b may be smaller than that of the reaction gas nozzle support portion 221a-a. In addition, the reaction gas nozzle injection units 221a-b may be disposed between protruding portions of adjacent barrier gas nozzle units 221c. In the reaction gas nozzle injection unit 221a-b, reaction gas supply holes 221a-c through which reaction gas is supplied and reaction gas injection holes 221a-d connected to the reaction gas supply holes 221a-c are formed. can

The reaction gas nozzle part 221a may include first movement passage parts 221a-e disposed on the reaction gas nozzle support part 221a-a. At this time, the first movement passage portion 221a-e may be formed in various shapes in the reaction gas nozzle support portion 221a-a. For example, the first movement flow path portions 221a-e may be formed in the form of grooves or holes on the surface of the reaction gas nozzle support portion 221a-a. In addition, the first movement flow path portion 221a-e may be formed in a concavo-convex shape on the surface of the reaction gas nozzle support portion 221a-a. At this time, the first movement passage part 221a-e may form a gas movement passage by separating at least a part of the reaction gas nozzle support part 221a-a from the barrier gas nozzle part 221c. Hereinafter, for convenience of description, a case in which the first movement passage parts 221a-e are formed in a groove shape will be described in detail.

A plurality of first movement passage parts 221a-e may be provided, and the plurality of first movement passage parts 221a-e may be arranged to be spaced apart from each other. At this time, the other part of the reaction gas nozzle support part 221a-a where the first movement passage part 221a-e is not formed may come into contact with the barrier gas nozzle part 221c, and a separate member such as a bolt or screw. By this, it can be combined with the barrier gas nozzle part 221c.

The source gas nozzle unit 221b may be disposed to be spaced apart from the reaction gas nozzle unit 221a. In this case, the source gas nozzle unit 221b may be formed separately from the reaction gas nozzle unit 221a and installed in the barrier gas nozzle unit 221c.

The source gas nozzle part 221b as described above includes a source gas nozzle support part 221b-a seated on the barrier gas nozzle part 221c, and a source gas nozzle ejection part extending from the source gas nozzle support part 221b-a ( 221b-b). At this time, the width of the source gas nozzle support part 221b-a may be larger than that of the source gas nozzle ejection part 221b-b. In addition, the source gas nozzle dispensing unit 221b-b is connected to the source gas supply hole 221b-c through which the source gas is supplied and the source gas supply hole 221b-c, and the source gas for injecting the source gas to the outside. Spray holes 221b-d may be formed.

The source gas nozzle support portion 221b-a may include a second movement passage portion 221b-e through which the source gas and the barrier gas move. At this time, since the second movement passage portion 221b-e may be formed similarly to the first movement passage portion 221a-e, a detailed description thereof will be omitted.

The barrier gas nozzle unit 221c may be installed to be separable from the reaction gas nozzle unit 221a and the source gas nozzle unit 221b. At this time, the barrier gas nozzle part 221c not only provides a space in which the reaction gas nozzle part 221a and the source gas nozzle part 221b can be installed, but also the reaction gas nozzle part 221a and the source gas nozzle part 221b. ) can be supported.

A plurality of barrier gas nozzle units 221c as described above may be provided, and the plurality of barrier gas nozzle units 221c may be disposed to be spaced apart from each other. In particular, as described above, each barrier gas nozzle unit 221c may be disposed on at least one side surface of the reaction gas nozzle unit 221a and the source gas nozzle unit 221b. For example, the barrier gas nozzle unit 221c may be disposed between the reaction gas nozzle unit 221a and the source gas nozzle unit 221b. Also, the barrier gas nozzle unit 221c may be disposed on the side of the reaction gas nozzle unit 221a.

The barrier gas nozzle unit 221c may include a nozzle housing 221c-a forming a space and a barrier gas nozzle 221c-b disposed in the nozzle housing 221c-a. At this time, the nozzle housing 221c-a may form a space in which the reaction gas nozzle unit 221a, the source gas nozzle unit 221b, and the organic layer nozzle unit 225 are disposed. In addition, at least one of the reaction gas nozzle unit 221a and the source gas nozzle unit 221b may be seated on the barrier gas nozzle 221c-b. The barrier gas nozzle 221c-b may include a barrier gas supply hole 221c-c through which the barrier gas is supplied and a barrier gas injection hole 221c-d connected to the barrier gas supply hole 221c-c. .

The plurality of reaction gas nozzle parts 221a as described above include a first reaction gas nozzle part 221a-1, a second reaction gas nozzle part 221a-2, and a third reaction gas nozzle part 221a-3. can do. Also, the plurality of source gas nozzle units 221b may include a first source gas nozzle unit 221b-1 and a second source gas nozzle unit 221b-2. The plurality of barrier gas nozzle units 221c include a first barrier gas nozzle unit 221c-1, a second barrier gas nozzle unit 221c-2, a third barrier gas nozzle unit 221c-3, and a fourth barrier gas nozzle unit 221c-3. A nozzle unit 221c-4, a fifth barrier gas nozzle unit 221c-5, and a sixth barrier gas nozzle unit 221c-6 may be included.

The plurality of reaction gas nozzle parts 221a, the plurality of source gas nozzle parts 221b, and the plurality of barrier gas nozzle parts 221c may be arranged in various forms. At this time, two of the plurality of reaction gas nozzle parts 221a may be disposed outside the plurality of source gas nozzle parts 221b. For example, a plurality of source gas nozzle units 221b may be disposed between the first reaction gas nozzle unit 221a-1 and the third reaction gas nozzle unit 221a-3.

The arrangement of the plurality of reaction gas nozzle parts 221a, the plurality of source gas nozzle parts 221b, and the plurality of barrier gas nozzle parts 221c as described above is hereinafter from the left with reference to FIGS. 2 and 3 A first barrier gas nozzle unit 221c-1, a first reaction gas nozzle unit 221a-1, a second barrier gas nozzle unit 221c-2, a first source gas nozzle unit 221b-1, and a third A barrier gas nozzle unit 221c-3, a second reaction gas nozzle unit 221a-2, a fourth barrier gas nozzle unit 221c-4, a second source gas nozzle unit 221b-2, and a fifth barrier gas A case in which the nozzle unit 221c-5, the third reaction gas nozzle unit 221a-3, and the sixth barrier gas nozzle unit 221c-6 are sequentially arranged will be described in detail.

Meanwhile, the organic film nozzle unit 225 may spray the mixed gas onto the display substrate D to form an organic film. At this time, the organic film nozzle unit 225 includes a nozzle body unit 225a for spraying the mixed gas, a cover 225b connected to the nozzle body unit 225a, and a gap between the cover 225b and the nozzle housing 221c-a. A second insulating part 225d shielding the disposed first insulating part 225c and the cover 225b may be included. In addition, the organic film nozzle part 225 is disposed between the nozzle body part 225a and the nozzle housing 221c-a and insulates the nozzle body part 225a from the nozzle housing 221c-a. 225e).

The organic film nozzle unit 225 as described above may form an organic film through a chemical vapor deposition method or a plasma chemical vapor deposition method. At this time, a voltage is applied to at least one of the nozzle body part 225a and the cover 225b so that the mixed gas can be formed in a plasma form and then sprayed to the display substrate D.

The purge gas nozzle unit 226 may be disposed at the outermost part of the nozzle unit 220 . At this time, a purge gas supply hole 226-1 through which purge gas is supplied and a purge gas injection hole 226-2 connected to the purge gas supply hole 226-1 may be formed in the purge gas nozzle unit 226. there is. Specifically, the purge gas nozzle unit 226 may include a first purge gas nozzle unit 226a and a second purge gas nozzle unit 226b disposed to be spaced apart from each other. In this case, an inorganic film nozzle part 221 and an organic film nozzle part 225 may be disposed between the first purge gas nozzle part 226a and the second purge gas nozzle part 226b. The purge gas nozzle unit 226 as described above may be formed identically or similarly to the barrier gas nozzle unit 221c.

The exhaust unit 230 may discharge at least one of a reaction gas, a source gas, a barrier gas, and a purge gas to the outside. In this case, the exhaust unit 230 may be disposed on a side surface of at least one of the inorganic layer nozzle unit 221 and the organic layer nozzle unit 225 .

A plurality of exhaust units 230 may be provided. At this time, the plurality of exhaust parts 230 include the first exhaust part 231 disposed between the inorganic film nozzle part 221 and the organic film nozzle part 225, the side surface of the inorganic film nozzle part 221, and the organic film nozzle A second exhaust unit 232 disposed on the side of the unit 225 may be included. In this case, the first exhaust unit 231 and the second exhaust unit 232 may be disposed to be spaced apart from each other, and the first exhaust unit 231 may be disposed between the plurality of second exhaust units 232 .

The plurality of exhaust units 230 may include a third exhaust unit 233 disposed in the inorganic film nozzle unit 221 . At this time, a plurality of third exhaust units 233 may be provided, and the plurality of third exhaust units 233 are disposed between the first barrier gas nozzle unit 221c-1 and the second barrier gas nozzle unit 221c-2. , Between the second barrier gas nozzle part 221c-2 and the third barrier gas nozzle part 221c-3, between the third barrier gas nozzle part 221c-3 and the fourth barrier gas nozzle part 221c-4 , between the fourth barrier gas nozzle unit 221c-4 and the fifth barrier gas nozzle unit 221c-5 and between the fifth barrier gas nozzle unit 221c-5 and the sixth barrier gas nozzle unit 221c-6 can be placed in each. In particular, each third exhaust unit 233 may be formed in a space between adjacent barrier gas nozzle units. In addition, each of the third exhaust units 233 may discharge the barrier gas and the reaction gas or the barrier gas and the source gas to the outside.

The transfer unit 240 may be installed inside the chamber 210 to be linearly movable. At this time, the transfer unit 240 may linearly move with the substrate 21 seated thereon. In particular, the transfer unit 240 may transfer the substrate 21 in the direction in which each nozzle unit is disposed. In addition, the transfer unit 240 may be linearly moved through the loading unit 100 , the chamber 210 , the unloading unit 300 and the protective layer forming unit 400 .

The transfer unit 240 as described above may be formed in various shapes. For example, the transfer unit 240 may be formed in a shuttle shape or may be formed in a conveyor shape. In particular, when the transfer unit 240 is formed in the form of a shuttle, a linear motor or the like may be provided to transfer the shuttle.

The loading unit 100 may load the substrate 21 supplied from the outside and transfer it to the chamber 210 . At this time, since the loading unit 100 is the same as or similar to a loading chamber generally used in a display device, a detailed description thereof will be omitted.

The unloading unit 300 may transfer the substrate 21 supplied from the chamber 210 to the protective layer forming unit 400 . At this time, the unloading unit 300 may be provided with a robot arm or the like to transfer the substrate 21 .

The protective layer forming unit 400 may form a protective layer (P). At this time, the protective layer forming unit 400 may form the protective layer P through a chemical vapor deposition method. The protective layer (P) is made of silicon nitride (SiNx), silicon nitride oxide (SiOxNy), titanium oxide (TIOx), titanium nitride (TINx), titanium nitride oxide (TiOxNy), zirconium oxide (ZrOx), tantalum nitride (TaNx), It may include a metal-based oxide or nitride series such as tantalum oxide (TaNx), hafnium oxide (HfOx), and aluminum oxide (AlOx).

On the other hand, looking at the manufacturing sequence of the display device (not shown), first, each layer is laminated on a substrate (not shown), then an organic light emitting element (not shown) is formed, and a display substrate (D) on which a pixel defining film is formed is formed. manufacture The display substrate D may be supplied to the loading unit 100 from the outside.

The loading unit 100 may load the display substrate D into the chamber 210 . At this time, the transfer unit 240 may move from the loading unit 100 to the inside of the chamber 210 in a state where the display substrate D is seated.

As described above, when the display substrate D is loaded into the chamber 210 , the transfer unit 240 may linearly move inside the chamber 210 . At this time, the first purge gas nozzle unit 226a may spray purge gas to the display substrate D. At this time, the purge gas may include an inert (or non-reactive) gas such as argon.

When the transfer part 240 is continuously transferred, the inorganic film nozzle unit 221 and the organic film nozzle unit 225 may operate sequentially. For example, the barrier gas may be sprayed onto the display substrate D from the first barrier gas nozzle unit 221c-1. In this case, the barrier gas may be the same as or similar to the purge gas.

The display substrate D passing through the first barrier gas nozzle unit 221c-1 may pass through the first reaction gas nozzle unit 221a-1. At this time, the reaction gas may include nitrogen, oxygen, ozone, ammonia gas, and the like. In particular, the reaction gas as described above may include a gas capable of being oxidized. In addition, the first reaction gas nozzle unit 221a-1 may apply energy to the above-mentioned reaction gas to excite it to a plasma state and supply it to the display substrate D. At this time, the method of applying energy to the reaction gas will be described in detail focusing on the method of forming a potential difference in the nozzle for convenience of description.

The second barrier gas nozzle unit 221c-2 supplies the barrier gas to the display substrate D, thereby preventing other gases from being mixed with the reaction gas.

When the display substrate D passing through the second barrier gas nozzle part 221c-2 reaches the first source gas nozzle part 221b-1, the first source gas nozzle part 221b-1 releases the source gas. It can be sprayed onto the display substrate (D). In this case, the source gas may be a gas containing titanium (Ti), zirconium (Zr), hafnium (Hf), aluminum (Al), zinc (Zn), or the like.

In the case of spraying the source gas as described above, the source gas may react with the reaction gas to form an inorganic layer on the display substrate D.

The display substrate D passes through the first source gas nozzle unit 221b-1 to form a third barrier gas nozzle unit 221c-3, a second reaction gas nozzle unit 221a-2, and a fourth barrier gas nozzle unit. (221c-4), the second source gas nozzle part (221b-2), the fifth barrier gas nozzle part (221c-5), the third reaction gas nozzle part (221a-3) and the sixth barrier gas nozzle part (221c) -6), the above operations can be performed repeatedly.

When the above operation is performed, an inorganic film may be formed on the display substrate (D). In this case, the inorganic film may be formed of a plurality of layers, or may be formed of a single layer.

The display substrate D may be transferred to the organic film nozzle unit 225 through the transfer unit 240 . At this time, the organic layer nozzle unit 225 may spray the mixed gas onto the inorganic layer to form an organic layer. As an example, the mixed gas may include silane and ammonia gas. The mixed gas as described above is not limited to the above, and may include various materials depending on the components of the organic layer.

As described above, while the inorganic film nozzle unit 221 and the organic film nozzle unit 225 operate, the exhaust unit 230 discharges at least one of the reaction gas, the source gas, the barrier gas, the purge gas, and the mixed gas to the outside. can Specifically, the first exhaust unit 231 may discharge the barrier gas and the mixed gas to the outside. In addition, the second exhaust unit 232 may discharge the purge gas and the mixed gas or the purge gas and the barrier gas to the outside. The third exhaust unit 233 may discharge the barrier gas and the reaction gas or the barrier gas and the source gas to the outside. At this time, the third exhaust part 233 is connected to the first moving passage part 221a-e or the second moving passage part 221b-e, so that the reaction gas nozzle part 221a and the source gas nozzle part 221b are connected. Various gases on the lower side can be discharged to the outside.

The first exhaust unit 231 to the third exhaust unit 233 as described above may be connected to a pump (not shown) installed outside the chamber 210 . At this time, the first exhaust unit 231 to the third exhaust unit 233 may be connected to separate pumps, or may be connected to one pump in another embodiment. In addition, the third exhaust unit 233 may separate the reaction gas and the source gas from each other and discharge them to the outside. In this case, the third exhaust unit 233 may include a passage through which the reaction gas moves and a passage through which the source gas moves, and the passage through which the reaction gas moves and the passage through which the source gas moves may be formed to be distinguished from each other. .

The inorganic film nozzle unit 221 and the organic film nozzle unit 225 may operate simultaneously or sequentially. At this time, when the third exhaust unit 233 operates as described above, the reaction gas and the source gas may not be mixed. In particular, the third exhaust unit 233 can prevent the reaction gas and the source gas from being mixed together with the barrier gas nozzle unit 221c. In addition, even when the inorganic film nozzle part 221 and the organic film nozzle part 225 are used simultaneously by the operation of the first exhaust part 231, the reaction gas and the source gas injected from the inorganic film nozzle part 221 are organic. It can be prevented from moving onto the film nozzle part 225, and the mixed gas injected from the organic film nozzle part 225 can be prevented from moving toward the inorganic film nozzle part 221. In addition, the reaction gas, the source gas, and the mixed gas injected from the inorganic film nozzle part 221 and the organic film nozzle part 225 through the second exhaust part 232 are blocked from moving to other parts of the chamber 210. can

Meanwhile, after the inorganic film and the organic film are formed on the display substrate D as described above, the transfer unit 240 may supply the substrate 21 to the unloading unit 300 .

Thereafter, the substrate 21 is supplied from the unloading unit 300 to the protective layer forming unit 400, and the protective layer forming unit 400 may form a protective layer P on the thin film encapsulation layer E. . At this time, the protective layer (P) may be formed in various ways. For example, the protective layer P may be formed through a sputtering method, an ion beam deposition method, an evaporation method, a general chemical vapor deposition method, or the like. Hereinafter, for convenience of description, the protective layer (P) will be described in detail with a focus on being formed through a chemical vapor deposition method.

In particular, the protective layer (P) may be formed to completely cover the side surface of the thin film encapsulation layer (E). The protective layer (P) can increase the lifespan of the thin film encapsulation layer (E) by blocking the thin film encapsulation layer (E) from moisture or oxygen.

In the above case, when the inorganic film and the organic film are formed inside one chamber 210, the apparatus 10 for manufacturing the display device may prevent the nozzle part from reacting and closing each nozzle part when the respective gases are mixed. there is. In addition, the display device manufacturing apparatus 10 configures the reaction gas nozzle unit 221a and the source gas nozzle unit 221b to be separable from the barrier gas nozzle unit 221c and has a similar shape, thereby forming the reaction gas nozzle. It is possible to freely arrange the portion 221a and the source gas nozzle portion 221b. In particular, the display device manufacturing apparatus 10 configures the reaction gas nozzle unit 221a and the source gas nozzle unit 221b to be separable from the barrier gas nozzle unit 221c, thereby forming the reaction gas nozzle unit 221a and the source gas nozzle unit 221a. In case of failure or damage of the part 221b, exchange and replacement can be easily performed.

5 is a cross-sectional perspective view illustrating a nozzle unit and an exhaust unit of a manufacturing apparatus for a display device according to another exemplary embodiment of the present invention. FIG. 6 is a cross-sectional view taken along line IV-IV of FIG. 5 . 7 is a bottom view showing a bottom surface of the nozzle unit shown in FIG. 5;

5 to 7, the display device manufacturing apparatus (not shown) includes a loading unit (not shown), an encapsulation layer forming unit (not shown), an unloading unit (not shown), and a protective layer forming unit (not shown). ) may be included. At this time, the encapsulation layer forming unit may include a chamber 210', a nozzle unit 220', an exhaust unit 230', and a transfer unit 240'. Since the loading unit, the unloading unit, and the protective layer forming unit are the same as or similar to those described above, detailed descriptions thereof will be omitted. In addition, since the chamber 210' and the transfer unit 240' are the same as or similar to those described above, a detailed description thereof will be omitted.

The nozzle part 220' may include an inorganic film nozzle part 221', an organic film nozzle part 225', and a purge gas nozzle part 226'. In this case, the inorganic film nozzle unit 221' may form an inorganic film on the display substrate (not shown), and the organic film nozzle part 225' may form an organic film on the inorganic film.

The inorganic film nozzle unit 221' may include a reaction gas nozzle unit 221a', a source gas nozzle unit 221b', and a barrier gas nozzle unit 221c'. At this time, since the reaction gas nozzle part 221a' and the source gas nozzle part 221b' are the same as or similar to those described above, a detailed description thereof will be omitted.

The barrier gas nozzle unit 221c' may be disposed on a side surface of at least one of the reaction gas nozzle unit 221a' and the source gas nozzle unit 221b'. In addition, a plurality of barrier gas nozzle units 221c' may be provided. At this time, at least two or more of the plurality of barrier gas nozzle parts 221c' may be disposed between the reaction gas nozzle part 221a' and the source gas nozzle part 221b'. That is, at least two or more barrier gas nozzle parts 221c' may be arranged adjacent to each other between the reaction gas nozzle part 221a' and the source gas nozzle part 221b'.

The organic film nozzle part 225' includes a nozzle body part 225a', a cover 225b', a first insulating part 225c', a second insulating part 225d', and a third insulating part 225e'. can include In this case, the first insulating portion 225c' may insulate between the cover 225b' and the nozzle housing 221c'-a. In addition, the second insulator 225d' may shield the cover 225b', and the third insulator 225e' insulates between the nozzle body 225a' and the nozzle housing 221c'-a. can make it

The purge gas nozzle unit 226' may include a first purge gas nozzle unit 226a' and a second purge gas nozzle unit 226b'. At this time, since the first purge gas nozzle part 226a' and the second purge gas nozzle part 226b' are the same as or similar to those described above, a detailed description thereof will be omitted.

The exhaust unit 230' may include a first exhaust unit 231', a second exhaust unit 232', and a third exhaust unit 233'. In this case, the first exhaust part 231' may be disposed between the inorganic film nozzle part 221' and the organic film nozzle part 225'. In addition, the second exhaust part 232' may be disposed on the side of the inorganic film nozzle part 221' and the organic film nozzle part 225'. In particular, the inorganic film nozzle part 221', the first exhaust part 231', and the organic film nozzle part 225' may be sequentially arranged between the second exhaust parts 232'.

The third exhaust unit 233' is disposed in the inorganic film nozzle unit 221', and when the inorganic film nozzle unit 221' operates, at least one of a reaction gas, a source gas, and a barrier gas can be discharged to the outside. . At this time, a plurality of third exhaust units 233' may be provided, and one of the plurality of third exhaust units 233' is between the barrier gas nozzle unit 221c' where the reaction gas nozzle unit 221a' is disposed. can be placed in Also, another one of the plurality of third exhaust units 233' may be disposed between the barrier gas nozzle units 221c' where the source gas nozzle units 221b' are disposed.

The exhaust unit 230' may include a barrier gas exhaust unit 234' disposed between adjacent barrier gas nozzle units 221c'. At this time, the barrier gas exhaust unit 234' can suck in the barrier gas injected from the adjacent barrier gas nozzle unit 221c' and discharge it to the outside.

Meanwhile, looking at the operation of the display device manufacturing apparatus as described above, the display substrate may be supplied to the loading unit, seated in the transfer unit, and then loaded into the chamber. At this time, the transfer unit may sequentially pass through the inorganic film nozzle part 221' and the organic film nozzle part 225' while sequentially moving inside the chamber. In this case, an inorganic layer and an organic layer may be sequentially formed on the display substrate to form a thin film encapsulation layer (not shown).

When the display substrate moves, at least one of the reaction gas, the source gas, and the barrier gas may be discharged to the outside through the third exhaust unit 233'. At this time, the edge of the reaction gas nozzle unit 221a' and the edge of the source gas nozzle unit 221b' may be spaced apart from the nozzle housing 221c'-a and the barrier gas nozzle 221c'-b. Specifically, when viewed on the X-Y plane of FIG. 5, as shown in FIG. 7, the rim of the reaction gas nozzle part 221a' and the rim of the source gas nozzle part 221b' are the nozzle housing 221c'-a and the barrier gas nozzle ( 221c'-b). In this case, in the reaction gas nozzle part 221a', the reaction gas nozzle support part 221a'-a is seated on the barrier gas nozzle part 221c', and the source gas nozzle part 221b' is the source gas nozzle support part 221b'. -a) may be supported by being seated on the barrier gas nozzle part 221c'. In particular, the upper and lower sides of the reaction gas nozzle 221a' communicate with each other through the first movement passage 221a'-e, and the source gas nozzle 221b' through the second movement passage 221b'-e. ) The lower and upper sides of the can be in communication. In this case, a part of the reaction gas and the barrier gas move to the third exhaust part 233' through the first moving passage part 221a'-e, and the source gas through the second moving passage part 221b'-e. A portion of and the barrier gas may move to the third exhaust unit 233'.

After forming an inorganic layer and an organic layer on the display substrate, they may be supplied to the unloading unit. In addition, a protective layer (not shown) may be formed on the thin film encapsulation layer by being supplied from the unloading unit to the protective layer forming unit.

Accordingly, when the inorganic film and the organic film are formed in one chamber, the apparatus for manufacturing the display device may prevent the nozzle part from reacting and closing each nozzle part when gases are mixed. In addition, the apparatus for manufacturing the display device configures the reaction gas nozzle part 221a' and the source gas nozzle part 221b' to be separable from the barrier gas nozzle part 221c' and has a similar shape, thereby forming the reaction gas nozzle part 221a' and the source gas nozzle part 221b'. It is possible to freely arrange the nozzle part 221a' and the source gas nozzle part 221b'. In particular, the manufacturing apparatus of the display device configures the reaction gas nozzle part 221a' and the source gas nozzle part 221b' to be separable from the barrier gas nozzle part 221c', thereby forming the reaction gas nozzle part 221a' and the source gas nozzle part 221a' and the source gas nozzle part 221a'. In case of failure or damage of the gas nozzle part 221b', replacement and replacement can be easily performed.

FIG. 8 is a plan view illustrating a display device manufactured through the display device manufacturing apparatus shown in FIG. 1 . FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 8 .

Referring to FIGS. 8 and 9 , the display device 20 may define a display area DA on a substrate 21 and a non-display area outside the display area DA. A light emitting unit may be disposed in the display area DA, and a power supply wire (not shown) may be disposed in the non-display area. Also, a pad part C may be disposed in the non-display area.

The display device 20 may include a display substrate D and a thin film encapsulation layer E formed on the display substrate D. The display substrate D may be formed by stacking various layers on the substrate 21 . At this time, the substrate 21 may be made of a plastic material or a metal material such as SUS or Ti. In addition, the substrate 21 may use polyimide (PI, Polyimide). Hereinafter, for convenience of explanation, a case in which the substrate 21 is formed of polyimide will be described in detail.

A light emitting unit may be formed on the substrate 21 . In this case, the light emitting unit may include thin film transistors (TFTs), a passivation film 27 may be formed to cover them, and an organic light emitting element 28 may be formed on the passivation film 27 .

In this case, the substrate 21 may be made of a glass material, but is not necessarily limited thereto, and may be made of a plastic material or a metal material such as SUS or Ti. In addition, the substrate 21 may use polyimide (PI, Polyimide). Hereinafter, for convenience of description, a case in which the substrate 21 is formed of a glass material will be described in detail.

A buffer layer 22 made of an organic compound and/or an inorganic compound is further formed on the upper surface of the substrate 21, and may be formed of SiOx (x≥1) or SiNx (x≥1).

After the active layer 23 arranged in a predetermined pattern is formed on the buffer layer 22, the active layer 23 is buried by the gate insulating layer 24. The active layer 23 has a source region 23a and a drain region 23b, and further includes a channel region 23b therebetween.

This active layer 23 may be formed to contain various materials. For example, the active layer 23 may contain an inorganic semiconductor material such as amorphous silicon or crystalline silicon. As another example, the active layer 23 may contain an oxide semiconductor. As another example, the active layer 23 may contain an organic semiconductor material. However, hereinafter, for convenience of explanation, a case in which the active layer 23 is formed of amorphous silicon will be described in detail.

The active layer 23 may be formed by forming an amorphous silicon film on the buffer layer 22, crystallizing the amorphous silicon film, and then patterning the polycrystalline silicon film. The active layer 23 is doped with impurities in its source region 23a and drain region 23b according to the type of TFT, such as a driving TFT (not shown) and a switching TFT (not shown).

A gate electrode 25 corresponding to the active layer 23 and an interlayer insulating layer 26 filling the gate electrode 25 are formed on the upper surface of the gate insulating layer 24 .

Then, after forming the contact hole H1 in the interlayer insulating layer 26 and the gate insulating layer 24, the source electrode 27a and the drain electrode 27b are respectively formed on the interlayer insulating layer 26 in the source region ( 23a) and the drain region 23b.

A passivation film 27 is formed above the thin film transistor thus formed, and a pixel electrode 28a of an organic light emitting element 28 (OLED) is formed on the passivation film 27. This pixel electrode 28a is in contact with the drain electrode 27b of the TFT through a via hole H2 formed in the passivation film 27. The passivation film 27 may be formed of an inorganic material and/or organic material, a single layer, or two or more layers, and may be formed as a planarization film so that the upper surface is flat regardless of the curvature of the lower film, while the curvature of the lower film. It can be formed so that the curve goes along. And, it is preferable that this passivation film 27 is formed of a transparent insulator so that a resonance effect can be achieved.

After the pixel electrode 28a is formed on the passivation film 27, a pixel defining film 29 is formed of an organic material and/or an inorganic material so as to cover the pixel electrode 28a and the passivation film 27. It is opened so that the electrode 28a is exposed.

An intermediate layer 28b and a counter electrode 28c are formed on at least the pixel electrode 28a.

The pixel electrode 28a functions as an anode electrode, and the counter electrode 28c functions as a cathode electrode. Of course, the polarities of the pixel electrode 28a and the counter electrode 28c may be reversed.

The pixel electrode 28a and the counter electrode 28c are insulated from each other by the intermediate layer 28b, and voltages of different polarities are applied to the intermediate layer 28b to emit light from the organic light emitting layer.

The intermediate layer 28b may include an organic emission layer. As another selective example, the intermediate layer 28b includes an organic emission layer and, in addition, a hole injection layer (HIL), a hole transport layer, and an electron transport layer. and at least one of an electron injection layer. The present embodiment is not limited thereto, and the intermediate layer 28b may include an organic light emitting layer and may further include various other functional layers (not shown).

In this case, the intermediate layer 28b as described above may be formed through the manufacturing apparatus (not shown) of the display device described above.

Meanwhile, one unit pixel is composed of a plurality of sub-pixels, and the plurality of sub-pixels can emit light of various colors. For example, the plurality of subpixels may include subpixels emitting red, green, and blue light, respectively, and may include subpixels (not shown) emitting red, green, blue, and white light.

Meanwhile, the thin film encapsulation layer E as described above may include a plurality of inorganic layers or may include an inorganic layer and an organic layer.

The organic layer of the thin film encapsulation layer (E) is formed of a polymer, and preferably may be a single layer or a laminated layer formed of any one of polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene and polyacrylate. More preferably, the organic layer may be formed of polyacrylate, and specifically, may include a polymerized monomer composition including a diacrylate-based monomer and a triacrylate-based monomer. A monoacrylate-based monomer may be further included in the monomer composition. In addition, a known photoinitiator such as TPO may be further included in the monomer composition, but is not limited thereto.

The inorganic layer of the thin film encapsulation layer (E) may be a single layer or a laminated layer including a metal oxide or a metal nitride. Specifically, the inorganic layer may include any one of SiNx, Al2O3, SiO2, and TiO2.

An uppermost layer exposed to the outside of the thin film encapsulation layer E may be formed of an inorganic film to prevent permeation of moisture into the organic light emitting element.

The thin film encapsulation layer E may include at least one sandwich structure in which at least one organic layer is inserted between at least two inorganic layers. As another example, the thin film encapsulation layer E may include at least one sandwich structure in which at least one inorganic layer is inserted between at least two organic layers. As another example, the thin film encapsulation layer E may include a sandwich structure in which at least one organic layer is inserted between at least two inorganic layers and a sandwich structure in which at least one inorganic layer is inserted between at least two organic layers. .

The thin film encapsulation layer E may include a first inorganic layer, a first organic layer, and a second inorganic layer sequentially from the top of the organic light emitting diode OLED.

As another example, the thin film encapsulation layer E may sequentially include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, and a third inorganic layer from the top of the organic light emitting diode OLED. .

As another example, the thin film encapsulation layer E may sequentially include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, a third inorganic layer, A third organic layer and a fourth inorganic layer may be included.

A metal halide layer including LiF may be further included between the organic light emitting diode (OLED) and the first inorganic layer. The metal halide layer may prevent the organic light emitting diode OLED from being damaged when the first inorganic layer is formed by the sputtering method.

The first organic layer may have a smaller area than the second inorganic layer, and the second organic layer may also have a smaller area than the third inorganic layer.

The thin film encapsulation layer (E) may be formed by stacking the inorganic film (U) and the organic film (O) through the display device manufacturing apparatus as described above. At this time, the thin film encapsulation layer E may also include a plurality of inorganic films and a plurality of organic films as described above. In this case, the thin film encapsulation layer E may be formed by providing a plurality of inorganic film nozzle parts and organic film nozzle parts in the manufacturing apparatus of the display device.

After forming the thin film encapsulation layer (E) through the above process, it is also possible to form the protective layer (P) on the thin film encapsulation layer (E) through the protective layer forming unit. In this case, since the protective layer P is the same as or similar to that described above, a detailed description thereof will be omitted.

Accordingly, the display device 20 may prevent external moisture permeation by forming the protective layer P on the thin film encapsulation layer E.

As such, the present invention has been described with reference to one embodiment shown in the drawings, but this is merely exemplary, and those skilled in the art will understand that various modifications and variations of the embodiment are possible therefrom. Therefore, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims.

10: Display device manufacturing device
20: display device
21: substrate
100: loading unit
200: encapsulation layer forming unit
210, 210′: chamber
220, 220′: nozzle part
221, 221′: inorganic film nozzle part
225, 225′: Organic film nozzle part
226, 226′: purge gas nozzle part
230, 230′: Exhaust part
240, 240′: transfer part
300: unloading unit
400: protective layer forming unit

Claims (14)

chamber;
an inorganic film nozzle unit disposed inside the chamber and forming an inorganic film on a display substrate;
an organic layer nozzle unit disposed inside the chamber and arranged in-line with the inorganic layer nozzle unit to form an organic layer on the inorganic layer; and
An exhaust unit disposed inside the chamber and disposed between the inorganic film nozzle part and the organic film nozzle part to suck in and exhaust gas to the outside;
The inorganic film nozzle part,
a reaction gas nozzle unit supplying a reaction gas;
a source gas nozzle unit configured to be spaced apart from the reaction gas nozzle unit and supplying a source gas;
A barrier gas nozzle unit configured to supply a barrier gas separated from the reaction gas nozzle unit and the source gas nozzle unit and disposed adjacent to a side surface of at least one of the reaction gas nozzle unit and the source gas nozzle unit,
The reaction gas nozzle part,
a reactive gas nozzle support part seated on the barrier gas nozzle part; and
and a reaction gas nozzle spraying unit connected to the reaction gas nozzle support and injecting the reaction gas to the outside. According to claim 1,
Manufacturing apparatus of a display device in which at least one of the reaction gas, the barrier gas, and the source gas is exhausted through at least one of between the reaction gas nozzle unit and the barrier gas nozzle unit and between the barrier gas nozzle unit and the source gas nozzle unit. . According to claim 1,
The reaction gas nozzle part, the source gas nozzle part, and the barrier gas nozzle part are respectively provided in plurality,
The plurality of reaction gas nozzles, the plurality of source gas nozzles, and the plurality of barrier gas nozzles are arranged in a line, and two of the plurality of reaction gas nozzles are disposed outside the plurality of source gas nozzles. Manufacturing apparatus for a display device to be. According to claim 1,
The reaction gas nozzle part and the source gas nozzle part are each provided with a plurality,
The apparatus for manufacturing a display device in which each of the reaction gas nozzle parts and each of the source gas nozzle parts are sequentially and repeatedly arranged. delete According to claim 1,
A manufacturing apparatus for a display device comprising: a first movement passage through which at least one of the reaction gas and the barrier gas flows. According to claim 1,
The source gas nozzle part,
a source gas nozzle support portion seated on the barrier gas nozzle portion; and
and a source gas nozzle injection unit connected to the source gas nozzle support unit and injecting the source gas to the outside. According to claim 7,
The source gas nozzle support part,
A manufacturing apparatus for a display device comprising: a second moving passage through which at least one of the source gas and the barrier gas flows. According to claim 1,
The barrier gas nozzle part is provided with a plurality,
At least two or more of the plurality of barrier gas nozzle parts are disposed between the reaction gas nozzle part and the source gas nozzle part. According to claim 9,
The apparatus for manufacturing a display device further comprising a barrier gas exhaust unit disposed between the at least two barrier gas nozzle units disposed between the reaction gas nozzle unit and the source gas nozzle unit. According to claim 1,
The exhaust unit is disposed outside at least one of the inorganic film nozzle part and the organic film nozzle part. According to claim 1,
The apparatus for manufacturing a display device further comprising a purge gas nozzle part disposed outside at least one of the inorganic film nozzle part and the organic film nozzle part. delete According to claim 1,
The manufacturing apparatus of the display device further comprising a; transfer part disposed to face the inorganic film nozzle part, the organic film nozzle part, and the exhaust part to transfer the display substrate.

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