KR102455159B1 - Slurry composition for metal film chemical mechanical polishing - Google Patents

Abstract

The present invention relates to a slurry composition for polishing a metal film, and the slurry composition for polishing a metal film according to an embodiment of the present invention comprises: abrasive particles; oxidizing agents; and an etching inhibitor; and satisfies the following conditional formula 1:
[Conditional Expression 1]
K ≥ 5
(wherein K is the removal rate (RR)/etch rate (SER) ((REMOVAL RATE; RR, R)/(STATIC ETCH RATE; SER, S))).

Description

Slurry composition for metal film polishing {SLURRY COMPOSITION FOR METAL FILM CHEMICAL MECHANICAL POLISHING}

The present invention relates to a slurry composition for polishing a metal film.

A semiconductor chip to which integrated circuit technology is applied includes numerous functional elements such as transistors, capacitors, and resistors, and these individual functional elements are connected to each other by wiring designed in a certain shape to constitute a circuit. Integrated circuits have been miniaturized with each generation, and accordingly, the functions of one chip are also gradually increasing. However, since there is a limit to simply reducing the size of a device, research on a multilayer wiring structure in which each device is formed in multiple layers is being actively conducted in recent years.

As semiconductor devices become highly integrated, high-density, and multi-layered, finer pattern forming techniques are used. Accordingly, the surface structure of the semiconductor device is complicated, and the step difference between the interlayer films is also increasing.

When a step occurs in these interlayer films, a process defect occurs in a semiconductor device manufacturing process, so it is important to minimize the step. Accordingly, in order to reduce the step difference between the interlayer films, a planarization technique of a semiconductor substrate is used.

In a semiconductor substrate planarization technique, a reactive ion etching method or a chemical mechanical polishing (CMP) method is used to remove a metal such as tungsten in a semiconductor process. Since the reactive ion etching method has a problem in that residues are generated on the semiconductor substrate after the process is performed, a chemical mechanical polishing method is more frequently used.

In the chemical mechanical polishing method, a semiconductor substrate is polished using a water-soluble slurry composition containing an abrasive or the like.

However, in general, since a metal film has high strength, it is not easy to polish. In order to effectively polish the metal film, it is necessary to oxidize the metal film in the form of a metal oxide having relatively low strength, and then perform polishing.

In order to polish the metal film as described above, a method of oxidizing the metal film is used, but the efficiency of the chemical conversion process of generating dishing and erosion in the polished metal film and oxidizing the metal film to a metal oxide form is not effective. There is a problem that is not satisfactory enough.

Therefore, control of the polishing rate ratio for the polished metal film and the insulating film is a very important factor in the development of a chemical mechanical polishing slurry composition without causing dishing and erosion in the polished metal film.

The present invention is to solve the above problems, and an object of the present invention is to reduce surface defects such as dishing or erosion while achieving a desired polishing rate, and to improve pattern characteristics of a metal film. It is to provide a slurry composition for polishing a metal film that can be used.

However, the problems to be solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present invention, abrasive particles; oxidizing agents; and an etching inhibitor, and provides a slurry composition for polishing a metal film, which satisfies the following condition:

[Conditional Expression 1]

K ≥ 5

(wherein K is the removal rate (RR)/etch rate (SER) ((REMOVAL RATE; RR, R)/(STATIC ETCH RATE; SER, S))).

In one embodiment, the oxidizing agent is hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodic acid, periodate, perchloric acid, perchlorate, perbromic acid, perbromate, perboric acid, perborate, permanganic acid, permanganate , at least one selected from the group consisting of persulfate, bromate, chlorate, chlorite, chromate, iodate, iodic acid, ammonium peroxide, calcium peroxide, barium peroxide, sodium peroxide, urea peroxide and benzoyl peroxide It may include one.

In one embodiment, the oxidizing agent may be 0.01 wt% to 5 wt% of the slurry composition for polishing a metal film.

In an embodiment, it further comprises an iron (Fe) ion, wherein the iron (Fe) ion is iron (II) nitrate, iron (III) nitrate, iron (II) sulfate, iron (III) sulfate, formic acid iron (II), iron (III) formate, iron (II) acetate, iron (III) acetate, iron (II) carbonate, iron (III) carbonate, iron (II) chloride, iron (III) chloride, iron (II) bromide , iron (III) bromide, iron (II) iodide, iron (III) iodide, iron (II) hydroxide, iron (III) hydroxide, iron (II) oxide, iron (III) oxide, acetylacetone iron (II), acetylacetone iron ( III), iron carbon monoxide (II), iron carbon monoxide (III), iron citrate (III), iron oxalate (III), iron fumarate (III), iron lactate (III), iron perchlorate (III), hexacyano iron ( It may be provided from an iron compound comprising at least one selected from the group consisting of ammonium III) acid, potassium hexacyano iron (III) acid, ammonium iron (III) sulfate, and potassium iron (III) sulfate.

In an embodiment, the iron (Fe) ions may be present in an amount of 0.0001 wt% to 5 wt% in the slurry composition for polishing a metal film.

In one embodiment, the etching inhibitor is histidine, arginine, methionine, serine, cysteine, glutamine, glutamic acid, glycine, alanine, valine, leucine, isoleucine, lysine, threonine, aspartic acid, asparagine, phenylalanine, deoxyphenylalanine, It may include at least one selected from the group consisting of tyrosine, tryptophan, ornithine, citrulline, homoserine, triiodotyrosine, thyroxine and proline.

In one embodiment, the etching inhibitor may be 0.001 wt% to 1 wt% of the slurry composition for polishing a metal film.

In one embodiment, further comprising a second etching inhibitor; wherein the second etching inhibitor is a quaternary ammonium compound, ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropyl Ammonium hydroxide, ethyltrimethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropyl At least one selected from the group consisting of ammonium hydroxide, (1-hydroxypropyl) trimethylammonium hydroxide, trimethylglycine, cocamidopropyl betaine, proline betaine, glycerin betaine and aryldimethylaminoacetic acid betaine may include.

In one embodiment, the second etching inhibitor may be 0.01 wt% to 1 wt% of the slurry composition for polishing a metal film.

In one embodiment, a polishing enhancer is further included, and the polishing enhancer may include at least one selected from the group consisting of glyoxyacetic acid, gluconic acid, glutamic acid, and glutaric acid.

In one embodiment, the polishing enhancer may be 0.01 wt% to 1 wt% of the slurry composition for polishing a metal film.

In one embodiment, the abrasive particles include at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic or inorganic material, and the metal oxide in a colloidal state, the metal oxide is silica, It may include at least one selected from the group consisting of ceria, zirconia, alumina, titania, barium titania, germania, mangania and magnesia.

In one embodiment, the abrasive particle size may be a single size particle of 20 nm to 200 nm or a mixed particle of two or more types.

In one embodiment, the abrasive particles may be 0.1 wt% to 10 wt% of the slurry composition for polishing a metal film.

In one embodiment, it further comprises a pH adjusting agent, wherein the pH adjusting agent is an inorganic acid comprising at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, and salts thereof. or an inorganic acid salt; and formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, It may include at least one selected from the group consisting of an organic acid or an organic acid salt comprising at least one selected from the group consisting of glycolic acid, lactic acid, aspartic acid, tartaric acid, and salts thereof.

In one embodiment, the pH of the slurry composition for polishing a metal film may be in the range of 2 to 7.

In an embodiment, the polishing target layer may include at least one selected from the group consisting of molybdenum, tungsten, copper, tantalum, titanium, cobalt, nickel, manganese, and ruthenium.

In one embodiment, the dishing value of the surface of the metal film after polishing the metal film using the slurry composition for polishing the metal film may be 100 Å or less.

In one embodiment, the erosion value of the surface of the metal film after polishing the metal film using the slurry composition for polishing the metal film may be 100 Å or less.

The slurry composition for polishing a metal film according to the present invention can suppress surface corrosion caused by chemical etching while maintaining a desired polishing rate of the metal film. In addition, pattern characteristics such as dishing and erosion by chemical etching may be improved by including an oxidizing agent, iron (Fe) ions, an etching inhibitor, and a second etching inhibitor.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, since various changes may be made to the embodiments, the scope of the patent application is not limited or limited by these embodiments. It should be understood that all modifications, equivalents and substitutes for the embodiments are included in the scope of the rights.

Terms used in the examples are used for the purpose of description only, and should not be construed as limiting. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present specification, terms such as “comprise” or “have” are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It is to be understood that this does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the embodiment belongs. Terms such as those defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. does not

In addition, in the description with reference to the accompanying drawings, the same components are assigned the same reference numerals regardless of the reference numerals, and the overlapping description thereof will be omitted. In the description of the embodiment, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the embodiment, the detailed description thereof will be omitted.

In addition, in describing the components of the embodiment, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the elements from other elements, and the essence, order, or order of the elements are not limited by the terms.

Components included in one embodiment and components having a common function will be described using the same names in other embodiments. Unless otherwise stated, descriptions described in one embodiment may be applied to other embodiments as well, and detailed descriptions within the overlapping range will be omitted.

According to an embodiment of the present invention, abrasive particles; oxidizing agents; and an etching inhibitor, and provides a slurry composition for polishing a metal film, which satisfies the following condition:

[Conditional Expression 1]

K ≥ 5

(wherein K is the removal rate (RR)/etch rate (SER) ((REMOVAL RATE; RR, R)/(STATIC ETCH RATE; SER, S))).

When the K value is less than 5, a desired polishing rate may be achieved, but surface planarization is difficult due to a high chemical etching rate, and corrosion of the surface may be promoted to cause surface defects.

The slurry composition for polishing a metal film according to the present invention can suppress surface corrosion caused by chemical etching while maintaining a desired polishing rate of the metal film. In addition, pattern properties such as dishing and erosion by chemical etching can be improved by including an oxidizing agent and an etching inhibitor.

In one embodiment, the oxidizing agent is hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodic acid, periodate, perchloric acid, perchlorate, perbromic acid, perbromate, perboric acid, perborate, permanganic acid, permanganate , at least one selected from the group consisting of persulfate, bromate, chlorate, chlorite, chromate, iodate, iodic acid, ammonium peroxide, calcium peroxide, barium peroxide, sodium peroxide, urea peroxide and benzoyl peroxide It may include one. The oxidizing agent may preferably be hydrogen peroxide.

In one embodiment, the oxidizing agent may be 0.01 wt% to 5 wt% of the slurry composition for polishing a metal film. When the oxidizing agent is less than 0.01% by weight of the slurry composition for polishing a metal film, the polishing rate and oxidation rate for the metal film may be reduced, and when the oxidizing agent is more than 5% by weight, the film-like surface is excessively etched and dishing in the pattern. Or it may cause secondary problems such as erosion.

In an embodiment, it further comprises an iron (Fe) ion, wherein the iron (Fe) ion is iron (II) nitrate, iron (III) nitrate, iron (II) sulfate, iron (III) sulfate, formic acid iron (II), iron (III) formate, iron (II) acetate, iron (III) acetate, iron (II) carbonate, iron (III) carbonate, iron (II) chloride, iron (III) chloride, iron (II) bromide , iron (III) bromide, iron (II) iodide, iron (III) iodide, iron (II) hydroxide, iron (III) hydroxide, iron (II) oxide, iron (III) oxide, acetylacetone iron (II), acetylacetone iron ( III), iron carbon monoxide (II), iron carbon monoxide (III), iron citrate (III), iron oxalate (III), iron fumarate (III), iron lactate (III), iron perchlorate (III), hexacyano iron ( It may be provided from an iron compound comprising at least one selected from the group consisting of ammonium III) acid, potassium hexacyano iron (III) acid, ammonium iron (III) sulfate, and potassium iron (III) sulfate. For example, iron nitrate dissociates in water to provide iron ions (Fe ²⁺ , Fe ³ ).

In an embodiment, the iron (Fe) ions may be present in an amount of 0.0001 wt% to 5 wt% in the slurry composition for polishing a metal film. When the iron (Fe) ion is less than 0.0001 wt% of the abrasive particles, a synergistic effect of polishing and metal film oxidation cannot be sufficiently obtained.

In one embodiment, the etching inhibitor is histidine, arginine, methionine, serine, cysteine, glutamine, glutamic acid, glycine, alanine, valine, leucine, isoleucine, lysine, threonine, aspartic acid, asparagine, phenylalanine, deoxyphenylalanine, It may include at least one selected from the group consisting of tyrosine, tryptophan, ornithine, citrulline, homoserine, triiodotyrosine, thyroxine and proline.

In one embodiment, the etching inhibitor may be 0.001 wt% to 1 wt% of the slurry composition for polishing a metal film. When the etching inhibitor is less than 0.001% by weight of the slurry composition for polishing a metal film, it is difficult to achieve a desired polishing rate, and when it is more than 1% by weight, agglomeration may occur, resulting in deterioration of polishing performance, dishing and erosion may occur. there is a problem

In one embodiment, further comprising a second etching inhibitor; wherein the second etching inhibitor is a quaternary ammonium compound, ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropyl Ammonium hydroxide, ethyltrimethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropyl At least one selected from the group consisting of ammonium hydroxide, (1-hydroxypropyl) trimethylammonium hydroxide, trimethylglycine, cocamidopropyl betaine, proline betaine, glycerin betaine and aryldimethylaminoacetic acid betaine may include.

In one embodiment, the second etching inhibitor may be 0.01 wt% to 1 wt% of the slurry composition for polishing a metal film. When the etching inhibitor is less than 0.01% by weight of the slurry composition for polishing a metal film, the etching inhibitor effect is insignificant, resulting in over-etching of the metal film, and defects of the metal film such as dishing or erosion cannot be improved, and when it exceeds 1% by weight It is difficult to achieve a desired metal film polishing rate, and a problem of surface defects may occur.

In one embodiment, it may further include a polishing enhancer.

In one embodiment, the polishing enhancer may include at least one selected from the group consisting of glyoxyacetic acid, gluconic acid, glutamic acid, and glutaric acid.

In one embodiment, the polishing enhancer may be 0.01 wt% to 1 wt% of the slurry composition for polishing a metal film. When the polishing enhancer is less than 0.01% by weight of the slurry composition for polishing a metal film, a desired polishing rate may not be secured, and when it is more than 1% by weight, there is a risk of over-etching and over-polishing of the metal film.

In one embodiment, the abrasive particles include at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic or inorganic material, and the metal oxide in a colloidal state, the metal oxide is silica, It may include at least one selected from the group consisting of ceria, zirconia, alumina, titania, barium titania, germania, mangania and magnesia. Preferably, the abrasive particles may be colloidal silica.

According to an embodiment, the abrasive particles may be prepared by a liquid phase method and dispersed so as to have a negative charge on the surface of the abrasive particles. The abrasive particles may include those prepared by a liquid phase method, but is not limited thereto. The liquid phase method is a sol-gel method in which abrasive particle precursors are chemically reacted in an aqueous solution and crystals are grown to obtain fine particles, a co-precipitation method in which abrasive particle ions are precipitated in an aqueous solution, and abrasive particles are formed under high temperature and high pressure. It can be prepared by applying a hydrothermal synthesis method or the like. The abrasive particles prepared by the liquid phase method are dispersed so that the surface of the abrasive particles has a negative charge.

In one embodiment, the abrasive particle size may be a single size particle of 20 nm to 200 nm or a mixed particle of two or more types. The measurement of the average particle diameter of the abrasive particles is an average value of the particle diameters of a plurality of particles within a viewing range that can be measured by scanning electron microscope analysis or dynamic light scattering. If the size of the abrasive particles is less than 20 nm, the polishing rate may not be secured, and if the size of the abrasive particles is more than 200 nm, there is a possibility of over-polishing. The over-polishing may lead to secondary defects such as dishing or erosion in the pattern.

According to an embodiment, the abrasive particles may use mixed particles including a particle distribution in a multi-dispersion type in addition to single-size particles, for example, abrasive particles having two different average particle sizes It may be mixed to have a bimodal particle distribution or to have a particle size distribution showing three peaks by mixing abrasive particles having three different average particle sizes. Alternatively, four or more kinds of abrasive particles having different average particle sizes may be mixed to have a polydisperse particle distribution. By mixing relatively large abrasive particles and relatively small abrasive particles, it has better dispersibility, and the effect of reducing scratches on the wafer surface can be expected.

According to one embodiment, the shape of the abrasive particles may include at least one selected from the group consisting of a spherical shape, a square shape, a needle shape, and a plate shape, and preferably a spherical shape.

According to one embodiment, the abrasive particles may be monocrystalline. When monocrystalline abrasive particles are used, a scratch reduction effect can be achieved compared to polycrystalline abrasive particles, dishing can be improved, and cleanability after polishing can be improved.

In one embodiment, the abrasive particles may be 0.1 wt% to 10 wt% of the slurry composition for polishing a metal film. If the abrasive particles are less than 1% by weight of the slurry composition for polishing a metal film, there is a problem in that the polishing rate is reduced, if it is more than 10% by weight, the polishing rate is too high, and the surface remains on the surface due to the increase in the number of abrasive particles Surface defects may occur due to particle adsorption properties.

In one embodiment, it may further include a pH adjusting agent. Since the pH adjuster is advantageous in dispersion stability, it may be further included as a material used to implement a pH range in which high-speed polishing performance and a good polishing surface can be secured for the metal film to be polished according to the present invention.

In one embodiment, the pH adjusting agent, nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, and an inorganic acid or an inorganic acid salt containing at least one selected from the group consisting of salts; and formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, It may include at least one selected from the group consisting of an organic acid or an organic acid salt comprising at least one selected from the group consisting of glycolic acid, lactic acid, aspartic acid, tartaric acid, and salts thereof.

In one embodiment, the pH of the slurry composition for polishing a metal film may be in the range of 2 to 7. Preferably, the pH of the slurry composition for polishing a metal film may be 2 to 4. The pH adjusting agent may be added in an amount to adjust the pH of the slurry composition for polishing a metal film. When the pH of the slurry composition for polishing a metal film is out of the above range, the polishing rate of the metal film is lowered, the surface roughness is not constant, and defects such as corrosion, etching, dishing, erosion, and surface imbalance may occur. can The pH can be adjusted by adding the above pH adjusting agent.

In an embodiment, the polishing target layer may include at least one selected from the group consisting of molybdenum, tungsten, copper, tantalum, titanium, cobalt, nickel, manganese, and ruthenium.

In one embodiment, the dishing value of the surface of the metal film after polishing the metal film using the slurry composition for polishing the metal film may be 100 Å or less.

In one embodiment, the erosion value of the surface of the metal film after polishing the metal film using the slurry composition for polishing the metal film may be 100 Å or less.

This reduces surface defects such as dishing or erosion by including an oxidizing agent, iron (Fe) ions, an etching inhibitor, and a second etching inhibitor in the metal film polishing slurry composition while maintaining the metal film polishing rate, and , it is possible to improve the pattern characteristics of the metal film.

Hereinafter, the present invention will be described in detail with reference to the following Examples and Comparative Examples. However, the technical spirit of the present invention is not limited or limited thereto.

[Example 1]

5.0 wt% of colloidal silica abrasive particles having a particle size of 120 nm, 0.12 wt% of histidine as an etching inhibitor, 0.05 wt% of ammonium hydroxide (NH ₄ OH) as a second etching inhibitor, 0.7 wt% of hydrogen peroxide and iron as an oxidizing agent A slurry composition for polishing a metal film having a pH of 2.5 was prepared by mixing 0.01% by weight of ions and using nitric acid as a pH adjusting agent.

[Example 2]

In Example 1, a slurry composition for polishing a metal film was prepared in the same manner as in Example 1, except that the histidine content was changed to 0.06 wt%.

[Example 3]

In Example 1, a slurry composition for polishing a metal film was prepared in the same manner as in Example 1, except that the histidine content was changed to 0.03 wt%.

[Example 4]

In Example 1, 0.12 wt% of arginine as an etching inhibitor and 0.05 wt% of Cocamidopropyl Betaine as a second etching inhibitor were used for polishing a metal film in the same manner as in Example 1 A slurry composition was prepared.

[Example 5]

In Example 4, a slurry composition for polishing a metal film was prepared in the same manner as in Example 4, except that the arginine content was changed to 0.06 wt%.

[Example 6]

In Example 4, a slurry composition for polishing a metal film was prepared in the same manner as in Example 4, except that the arginine content was changed to 0.03 wt%.

[Example 7]

In Example 1, a slurry composition for polishing a metal film was prepared in the same manner as in Example 1, except that 0.12 wt% of methionine as an etching inhibitor and 0.05 wt% of trimethylglycine as a second etching inhibitor were changed. did.

[Example 8]

In Example 7, a slurry composition for polishing a metal film was prepared in the same manner as in Example 7, except that the methionine content was changed to 0.06 wt%.

[Example 9]

A slurry composition for polishing a metal film was prepared in the same manner as in Example 7, except that in Example 7, the methionine content was changed to 0.03 wt%.

[Example 10]

In Example 1, a slurry composition for polishing a metal film was prepared in the same manner as in Example 1, except that 0.12 wt% of Serine as an etching inhibitor and 0.05 wt% of TMAH as a second etching inhibitor were changed.

[Example 11]

In Example 10, a slurry composition for polishing a metal film was prepared in the same manner as in Example 10, except that the serine content was changed to 0.06 wt%.

[Example 12]

In Example 10, a slurry composition for polishing a metal film was prepared in the same manner as in Example 10, except that the serine content was changed to 0.03 wt%.

[Comparative Example 1]

In Example 1, a slurry composition for polishing a metal film was prepared in the same manner as in Example 1, except that the etching inhibitor and the second etching inhibitor were not added.

[Comparative Example 2]

In Example 12, a slurry composition for polishing a metal film was prepared in the same manner as in Example 12, except that the second etching inhibitor and iron (Fe) ions were not added.

[Comparative Example 3]

In Example 6, a slurry composition for polishing a metal film was prepared in the same manner as in Example 6, except that the second etching inhibitor, the oxidizing agent, and iron (Fe) ions were not added.

[Method of measuring etching rate (SER)]

After immersing a 2 cm ² molybdenum coupon wafer of 5,000 Å in the slurry composition for polishing a metal film at 60° C. for 10 minutes and cleaning, using a 4 point probe of the molybdenum wafer, the thickness of the molybdenum wafer before and after immersion was measured It is to calculate the SER value per minute after measuring at intervals of 5 mm from the center of the wafer to the top, bottom, left and right. The SER value can be calculated by Equation 1 below, and the unit is Å/min.

[Equation 1]

[Polishing conditions and method of measuring the removal rate (RR)]

1. Feeding rate: 200 ml

2. Pressure: 3 psi

3. CMP time: 1 min.

[Method of measuring abrasion rate (RR)]

The RR value may be calculated by Equation 2 below, and the unit is Å/min.

[Equation 2]

As shown in Table 1, in Examples 1 to 12, it can be seen that the K value is 5 or more, and dishing and erosion are low because the desired polishing rate (RR) is secured and the etching rate (SER) is stable. have.

On the other hand, it can be seen that Comparative Examples 1 to 3 had a K value of less than 5 and high dishing and erosion.

As described above, although the embodiments have been described with reference to the limited drawings, those skilled in the art may apply various technical modifications and variations based on the above. For example, the described techniques are performed in a different order than the described method, and/or the described components of the system, structure, apparatus, circuit, etc. are combined or combined in a different form than the described method, or other components Or substituted or substituted by equivalents may achieve an appropriate result.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

Claims (19)

abrasive particles;
oxidizing agents; and
etch inhibitor;
including,
Iron (Fe) ions; further comprising,
The iron (Fe) ions include iron (II) nitrate, iron (III) nitrate, iron (II) sulfate, iron (III) sulfate, iron (II) formate, iron (III) formate, iron (II) acetate, Iron (III) acetate, iron (II) carbonate, iron (III) carbonate, iron (II) chloride, iron (III) chloride, iron (II) bromide, iron (III) bromide, iron (II) iodide, iron (III) iodide ), iron (II) hydroxide, iron (III) hydroxide, iron (II) oxide, iron (III) oxide, acetylacetone iron (II), acetylacetone iron (III), iron carbon monoxide (II), iron carbon monoxide (III), iron citrate (III), iron (III) oxalate, iron (III) fumarate, iron (III) lactate, iron (III) perchlorate, ammonium hexacyanoate (III), potassium hexacyanoate (III), iron sulfate (III) which may be provided from an iron compound comprising at least one selected from the group consisting of ammonium and iron (III) potassium sulfate,
The etching inhibitor is histidine, arginine, methionine, serine, cysteine, glutamine, glutamic acid, glycine, alanine, valine, leucine, isoleucine, lysine, threonine, aspartic acid, asparagine, phenylalanine, deoxyphenylalanine, tyrosine, tryptophan, ornithine. , to include at least one selected from the group consisting of citrulline, homoserine, triiodotyrosine, thyroxine and proline,
A second etching inhibitor; further comprising,
The second etching inhibitor is ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, ethyltrimethylammonium hydroxide, (2-hydroxyethyl)trimethyl Ammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide, (1-hydroxypropyl)trimethylammonium hydroxide, trimethylglycine, It will include at least one selected from the group consisting of cocamidopropyl betaine, troline betaine, glycerin betaine, and aryldimethylaminoacetic acid betaine,
abrasive enhancers; further comprising
The polishing enhancer includes at least one selected from the group consisting of glyoxyacetic acid, gluconic acid, glutamic acid and glutaric acid,
The abrasive particles are colloidal silica,
The polishing target film contains molybdenum,
A slurry composition for polishing a metal film that satisfies the following Conditional Expression 1:
[Conditional Expression 1]
K ≥ 5
(wherein K is the removal rate (RR)/etch rate (SER) ((REMOVAL RATE; RR, R)/(STATIC ETCH RATE; SER, S))).
According to claim 1,
The oxidizing agent,
Hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodic acid, periodate, perchloric acid, perchlorate, perbromic acid, perbromate, perboric acid, perborate, permanganic acid, permanganate, persulfate, bromate, chlorate, chlorite , chromate, iodate, iodic acid, ammonium peroxide, calcium peroxide, barium peroxide, sodium peroxide, urea peroxide, and at least one selected from the group consisting of benzoyl peroxide,
A slurry composition for polishing a metal film.
According to claim 1,
The oxidizing agent will be 0.01 wt% to 5 wt% of the slurry composition for polishing a metal film,
A slurry composition for polishing a metal film.
delete According to claim 1,
The iron (Fe) ions will be 0.0001 wt% to 5 wt% of the slurry composition for polishing a metal film,
A slurry composition for polishing a metal film.
delete According to claim 1,
The etching inhibitor is 0.001 wt% to 1 wt% of the slurry composition for polishing a metal film,
A slurry composition for polishing a metal film.
delete According to claim 1,
The second etching inhibitor is 0.01 wt% to 1 wt% of the slurry composition for polishing the metal film,
A slurry composition for polishing a metal film.
delete According to claim 1,
The polishing enhancer is 0.01 wt% to 1 wt% of the metal film polishing slurry composition, the metal film polishing slurry composition.
delete According to claim 1,
The abrasive particle size is a single size particle of 20 nm to 200 nm or a mixed particle of two or more types,
A slurry composition for polishing a metal film.
According to claim 1,
The abrasive particles, 0.1 wt% to 10 wt% of the slurry composition for polishing the metal film,
A slurry composition for polishing a metal film.
According to claim 1,
It further comprises a pH adjusting agent;
The pH adjusting agent,
an inorganic acid or an inorganic acid salt comprising at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, and salts thereof; and
Formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycol an organic acid or an organic acid salt comprising at least one selected from the group consisting of acids, lactic acid, aspartic acid, tartaric acid and salts thereof;
Which comprises at least one selected from the group consisting of
A slurry composition for polishing a metal film.
According to claim 1,
The pH of the slurry composition for polishing a metal film is in the range of 2 to 7,
Slurry composition for polishing metal film:
delete According to claim 1,
After polishing the metal film using the slurry composition for polishing the metal film, the dishing value of the surface of the metal film is 100 Å or less,
A slurry composition for polishing a metal film.
According to claim 1,
After polishing the metal film using the slurry composition for polishing the metal film, the erosion value of the surface of the metal film is 100 Å or less,
A slurry composition for polishing a metal film.