JP2002047483A - Polishing composition and polishing method using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a polishing composition which exhibits a high polishing rate to a copper film and a low polishing rate and a high selectivity to a tantalum-containing compound, can provide a polished surface excellent in smoothness, and can improve the quality and productivity; and to provide a polishing method using the same. SOLUTION: The polishing composition contains an abrasive material, at least either histidine or its derivative, hydrogen peroxide, and water. A semiconductor device at least having a layer formed from copper and a layer formed from a tantalum-containing compound is polished by the polishing method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing composition which is used for polishing substrates for semiconductors, photomasks and various types of memory hard disks, and is particularly suitable for surface flattening in the manufacture of device wafers in the semiconductor industry and the like. Things.

More specifically, in a polishing process of a semiconductor device to which a chemical / mechanical polishing technique is applied in a manufacturing process of a device wafer, a polishing composition which is highly efficient and can be applied to form an excellent polished surface. The present invention also relates to a polishing method using the polishing composition.

[0003]

2. Description of the Related Art In recent years, so-called high-tech products such as computers have been remarkably advanced, and components used in such high-tech products, such as ULSI devices, have been increasing in integration and operating speed year by year. Along with this, the design rules of semiconductor devices have become finer year by year, the depth of focus in the device manufacturing process has become shallower, and the flatness required for the pattern formation surface has become severer.

Further, in order to cope with an increase in wiring resistance due to miniaturization of wiring, use of copper instead of tungsten and aluminum as a wiring material is being studied. Copper is easily etched by its nature, and requires the following process. That is, after forming wiring grooves and holes on an insulating film, copper for wiring is formed by a sputtering method or a plating method (a so-called damascene method), and then unnecessary copper films deposited on the insulating film are chemically and
Mechanical Polishing (Chemical Mechanical)
Polishing (hereinafter referred to as “CMP”).

[0005] However, in the above-described process, copper atoms may diffuse into the insulating film and deteriorate device characteristics. Therefore, for the purpose of preventing the diffusion of copper atoms, it has been studied to provide a barrier layer on an insulating film in which wiring grooves or holes are formed. As a material of such a barrier layer,
Metal tantalum or tantalum compounds (hereinafter collectively referred to as “tantalum-containing compounds”) are the most excellent in terms of device reliability, and are most likely to be adopted in the future.

Therefore, in the CMP process of a semiconductor device containing such a copper film and a tantalum-containing compound, the copper film on the outermost layer and the tantalum-containing compound on the barrier layer are polished first, and then silicon dioxide or acid is added. The polishing is terminated when the insulating film such as silicon fluoride is reached. The ideal process is to use only one kind of polishing composition, remove the copper film and the tantalum-containing compound film uniformly by polishing in one polishing step, and make sure that the film reaches the insulating film. Then, the polishing is finished. However, with copper and tantalum-containing compounds, the hardness, chemical stability and other properties are different, so that the processability is different.Therefore, it is difficult to adopt the ideal processing process described above. A polishing process divided into two stages, that is, two times, has been studied.

First, in the first polishing step (1st polishing), a polishing composition capable of polishing a copper film with high efficiency is used, and the tantalum-containing compound film is used as a stopper with the tantalum-containing compound film or the like as a stopper. Polish the copper film until it reaches. At this time, in order to prevent various surface defects such as recess, erosion, and dishing from occurring on the surface of the copper film, just before reaching the tantalum compound, that is, 1
A method of terminating the laboratory may be adopted. Next, in the second polishing step (2nd polishing), a polishing composition that can mainly polish a tantalum-containing compound film with high efficiency is used, and the insulating film is used as a stopper until the film reaches the insulating film. Polish the copper film.

[0008] The performance required for the polishing composition used in the first polishing is such that the above-mentioned various surface defects (recesses and the like) that cannot be removed by the second polishing are generated on the surface of the copper film.
That is, the copper film can be polished at a high polishing rate.

As an example of a polishing composition for polishing such a copper film, Japanese Patent Application Laid-Open No. 7-233485 (conventional example 1) discloses an example of a polishing composition comprising at least one organic acid selected from aminoacetic acid and amidosulfuric acid. A polishing liquid for a copper-based metal containing an agent and water and a method for manufacturing a semiconductor device using the polishing liquid are disclosed. When a copper film is polished using this polishing liquid, a relatively high polishing rate can be obtained. This is presumed that the copper atoms on the surface of the copper film become copper ions by the action of the oxidizing agent, and a high polishing rate can be obtained by incorporating the copper ions into the chelating compound.

[0010]

However, according to experiments by the inventors, when a semiconductor device containing a copper film and a tantalum-containing compound is polished using the polishing liquid of the conventional example 1, the tantalum-containing compound film is polished. When the ratio of the polishing rate of the copper film to the polishing rate (hereinafter, referred to as “selection ratio”) is not sufficient, and when the composition or the like is adjusted so as to increase the selection ratio, the smoothness of the copper film surface after polishing is reduced. It could be significantly impaired. That is, in the polishing liquid of Conventional Example 1,
There is a problem in selectivity and smoothness of the polished surface, and there is room for improvement.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. In a CMP process in the manufacture of a semiconductor device containing at least a copper film and a tantalum-containing compound, the polishing rate for the copper film is high.
A polishing composition which has a low polishing rate with respect to a tantalum-containing compound, has a high selectivity, and can obtain a polished surface excellent in smoothness, and can improve quality and productivity, and a polishing composition using the same. It is an object of the present invention to provide an improved polishing method.

[0012]

The polishing composition according to the present invention comprises (a) an abrasive, (b) histidine and / or one of its derivatives, (c) hydrogen peroxide,
(D) water.

The polishing composition according to the present invention is characterized by further comprising (e) an anticorrosive.

[0014] In the polishing composition according to the present invention, the polishing material of (a) is at least one selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride, and silicon carbide. It is characterized by being a kind.

The polishing composition according to the present invention is characterized in that the abrasive of (a) is at least one selected from the group consisting of fumed silica, colloidal silica, fumed alumina and colloidal alumina. Things.

In the polishing composition according to the present invention, the abrasive of (a) has a primary particle diameter in the range of 0.005 to 0.3 μm and a content of 5 to 200 g / g with respect to the composition. It is within the range of liters.

In the polishing composition according to the present invention, the content of histidine and / or a derivative thereof (b) is in the range of 0.02 to 0.2 mol / l with respect to the composition. It is characterized by the following.

In the polishing composition according to the present invention, the content of hydrogen peroxide (c) is 0.001 to 2 m
ol / liter.

The polishing composition according to the present invention is characterized in that the anticorrosive (e) is at least one selected from the group consisting of benzotriazole, tolyltriazole, benzimidazole, triazole and imidazole. is there.

A polishing method according to the present invention is characterized in that a semiconductor device having at least a layer made of copper and a layer made of a tantalum-containing compound on a substrate is polished by using the polishing composition. It is.

Hereinafter, the present invention will be described in more detail. The following description is for the purpose of facilitating the understanding of the present invention, and does not limit the present invention.

<Abrasive> The abrasive, which is one of the components of the polishing composition according to the present invention, plays a role in mechanical polishing in the CMP process, and removes the brittle surface formed on the surface to be polished. It has an action of mechanically scraping. And as the abrasive, silicon dioxide, aluminum oxide, cerium oxide, titanium oxide, zirconium oxide,
It is at least one selected from the group consisting of silicon carbide and silicon nitride.

As silicon dioxide, there are various types of colloidal silica, fumed silica, and others having different production methods and properties.

Aluminum oxide is α-alumina, δ-
There are alumina, [theta] -alumina, [kappa] -alumina and others which differ in morphology, and there are also those called colloidal alumina and fumed alumina from the production method.

Cerium oxide includes trivalent and tetravalent cerium oxides in terms of oxidation number, and hexagonal, equiaxed, and face-centered cubic when viewed from the crystal system.

Titanium oxide includes titanium monoxide, dititanium trioxide, titanium dioxide and others from the viewpoint of crystal system, and there is also one called fumed titania from the manufacturing method.

Zirconium oxide is monoclinic, tetragonal, or amorphous when viewed from the crystal system, and is also called fumed zirconia from the manufacturing method. Then, calcium, magnesium or yttrium are dissolved, and a part of the crystal is stabilized as a cubic crystal system, so-called partially stabilized zirconia. There are also so-called fully stabilized zirconia completely stabilized.

Silicon carbide includes α-type, β-type and other morphologically different types.

Silicon nitride includes α-silicon nitride, β-silicon nitride, amorphous silicon nitride and other morphologically different ones.

These abrasives can be optionally used in combination as needed, and there is no particular limitation on the method of combination and the proportion used.

The abrasives have a uniform particle diameter in order to reduce the precipitation of the abrasives during the storage period of the polishing composition and to prevent scratches caused by the abrasives on the object to be polished. In addition, a colloidal material having a small particle size is used. In other words, when using silicon dioxide,
It is fumed silica and / or colloidal silica, and when using alumina, it is fumed alumina and / or colloidal alumina.

The primary particle diameter of the abrasive refers to the primary particle diameter calculated from the value of the specific surface area measured by the nitrogen adsorption method (BET method). In the case of silicon dioxide or aluminum oxide, it is generally 0. 0.005 to 0.3 μm, preferably 0.01 to 0.1 μm, and in the case of cerium oxide, zirconium oxide, titanium oxide, silicon nitride and silicon carbide, generally 0.01 to 0.3 μm, preferably 0.1 to 0.3 μm. 03 to 0.1 μm. If the primary particle size of the abrasive is too large, the mechanical polishing power becomes too high, the polishing rate for the tantalum-containing compound film increases, and scratches during polishing tend to occur. On the other hand, if the primary particle diameter is too small, the mechanical polishing power is reduced, and the polishing rate for the copper film is reduced. In addition, when calculating | requiring a primary particle diameter from the value of the specific surface area measured by the BET method, it calculates by the following formula (A).

D = 6 / ρ · S (A) where D is the primary particle diameter [nm], ρ is the true density of the abrasive [g / cm ³ ], and S is measured by the BET method. Specific surface area [m ² / g].

The content of the abrasive in the polishing composition is from 5 to 300 g / l, preferably from 10 to 300 g / l, based on the composition.
200 g / liter, more preferably 20 to 100 g
/ Liter. If the content of the abrasive is too small, the mechanical polishing power is reduced, and as a result, the polishing rate for the copper film is reduced. On the other hand, if the content of the abrasive is too large, the mechanical polishing power becomes large, and the polishing rate for the tantalum-containing compound film becomes too large, making the control difficult.

<Histidine and Derivative or One Histidine> The general formula of histidine and histidine which is one of the components of the polishing composition according to the present invention is shown in FIG. Shown in Figure 1
As is clear from the structural formula, histidine has one amino group, one carboxyl group, and one five-membered ring,
It has a structure in which two nitrogens are substituted in the five-membered ring. The former amino group and carboxyl group exert a chelating effect on copper, and promote polishing of copper. On the other hand, nitrogen in the five-membered ring is adsorbed on the copper surface and plays a role in forming a protective film.
As a result, the effect of the chelate etching on copper and the effect of forming a protective film on copper work at the same time, and exert an optimum effect on polishing of the copper film. In addition, histidine has an optical isomer as is clear from the structural formula of FIG.
Either L-integral or DL-body may be used. FIG. 1 shows an example of a histidine derivative.

The content of histidine and / or its derivative in the polishing composition is from 0.03 to 0.5 mol / l, preferably from 0.1 to 0.5 mol / l, based on the composition.
０．２0.2 mol / liter. If the content is excessively small, the polishing rate for the copper film is reduced, and if the content is excessively large, the polishing rate for the copper film is excessively large, making it difficult to control, or the smoothness of the copper film surface after polishing is poor. Become.

<Hydrogen peroxide> Hydrogen peroxide, one of the components of the polishing composition according to the present invention, acts as an oxidizing agent. Hydrogen peroxide has a feature that it has a sufficient oxidizing power to oxidize a copper film, and that it does not contain metal ions as impurities can be easily obtained. It is particularly suitable for

The content of hydrogen peroxide in the polishing composition is as follows:
It is 0.001 to 2 mol / l, preferably 0.01 to 0.1 mol / l, based on the composition. If the content of hydrogen peroxide is too small or too large, the polishing rate for the copper film is reduced.

<Water> It is preferable to use water, which is one of the components of the polishing composition according to the present invention, in which impurities are reduced as much as possible so that each of the above-mentioned components can accurately fulfill its role. . That is, it is preferable to use one obtained by removing impurity ions with an ion exchange resin and removing suspended matter through a filter or distilled water.

<Anticorrosion Agent> An anticorrosion agent, which is one of the components of the polishing composition according to the present invention, suppresses the etching action on the copper film, and suppresses surface defects such as recess, dishing or erosion during polishing. It is intended to suppress the reduction of the copper film due to the generation. The anticorrosive is at least one selected from the group consisting of benzotriazole, tolyltriazole, benzimidazole, triazole and imidazole.

The content of the anticorrosive in the polishing composition is not particularly limited, but is 0.000 to the composition.
It is preferably from 1 to 0.0012 mol / liter. In addition,
When an anticorrosive is added, the polishing rate may decrease. Therefore, care must be taken in determining the type and content.

<Polishing Composition> In the polishing composition according to the present invention, the above-mentioned components, that is, the abrasive, histidine and its derivative or any one thereof, and hydrogen peroxide are mixed with water and dissolved or dispersed. Prepared. Further, if necessary, an anticorrosive is added and mixed. The method of mixing, dissolving or dispersing is arbitrary. For example, stirring by a blade-type stirrer or ultrasonic dispersion may be used. By these methods, the soluble components dissolve and the insoluble components disperse, resulting in a uniform dispersion of the composition.

In preparing the above polishing composition, the pH is adjusted according to the purpose of maintaining the quality and safety of the product, the type of the object to be polished, the polishing conditions, and other necessary polishing processes. For this purpose, a pH adjuster, various surfactants and others may be appropriately mixed.

The pH adjuster is used for improving the stability of the polishing composition, improving the use safety, or complying with various laws and regulations. And p of the polishing composition according to the present invention
PH adjusters used to lower H include hydrochloric acid, nitric acid, sulfuric acid, chloroacetic acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, various fatty acids, various polycarboxylic acids and others. . On the other hand, those used for increasing the pH include, for example, potassium hydroxide, sodium hydroxide, ammonia, ethylenediamine, piperazine, polyethyleneimine and others. The pH of the polishing composition according to the present invention is not particularly limited, but is generally adjusted to pH 3 to 10.

The surfactant is used to adjust the surface tension or viscosity of the polishing composition in order to enhance the dispersibility of the abrasive. Examples of the surfactant used in the polishing composition according to the present invention include a dispersant, a wetting agent, a thickener, an antifoaming agent, a foaming agent, a water repellent, and others. Surfactants used as dispersants include sulfonic, phosphoric, carboxylic and nonionic surfactants.

In preparing the polishing composition according to the present invention, the order of mixing and the method of mixing the additives in preparing the polishing composition are not particularly limited.

Further, the polishing composition according to the present invention can be prepared as a stock solution having a relatively high concentration, stored or transported, and diluted at the time of actual polishing. The above-mentioned concentration range is described as the value at the time of actual polishing, and it goes without saying that a solution having a higher concentration is obtained in a state such as storage or transportation when a method of dilution at the time of use is employed. In addition, from the viewpoint of handleability, it is preferable to manufacture in such a concentrated form.

Further, since hydrogen peroxide has a property of decomposing when coexisting with metal ions, ammonium ions or amines, it can be added to and mixed with a polishing composition immediately before use in polishing. preferable. This decomposition of hydrogen peroxide can also be suppressed by mixing carboxylic acids or alcohols. That is, such an effect may be obtained by the above-mentioned pH adjuster. However, the decomposition is also affected by the storage environment and the like, so that a part of hydrogen peroxide may be decomposed due to a change in temperature during transportation, generation of stress, and the like. Therefore, it is preferable to mix hydrogen peroxide immediately before polishing.

<Polishing Method> The polishing method according to the present invention comprises the above-mentioned components, that is, an abrasive, histidine and its derivative or any one thereof, hydrogen peroxide, water and, in some cases, an anticorrosive. Polishing a semiconductor device having at least a layer made of copper and a layer made of a tantalum-containing compound on a base material using the polishing composition contained therein.

This polishing method has a high polishing rate for a copper film, a low polishing rate for a tantalum-containing compound, a high selectivity, and a surface to be polished with excellent smoothness. Such a polishing mechanism is not clear, but is presumed as follows.

First, histidine and its derivative or any one of them is chelated with copper during polishing.
High polishing ability for copper film. On the other hand, glycine used in the prior art also exerts a chelating effect on the copper film, but the effect is too strong, thereby impairing the smoothness of the polished copper film surface. However, histidine and its derivative or any one thereof has a carboxyl group and an amino group that exhibit a chelating effect, and also has a diazole group containing two nitrogen atoms.
The diazole group has a function of adjusting the chelating effect, but is adsorbed on the surface of the copper film and also has an appropriate protective function. Accordingly, it is considered that the polishing rate for the tantalum-containing compound film is suppressed, and the smoothness of the copper film surface after polishing is not impaired, while maintaining the high polishing rate for the copper film.

In the polishing composition according to the present invention, hydrogen peroxide is considered to exert an oxidizing effect.
Such an action is utilized in general CMP processing. In the present invention, however, a combination of the above-mentioned histidine and its derivative or any one of the chelating effect and the oxidizing action of hydrogen peroxide is used. Polishing is more effectively promoted.

The inclusion of histidine and its derivative or any one of the features of the present invention exhibits a particularly favorable phenomenon in cooperation with this hydrogen peroxide (oxidizing agent). That is, in the case of a normal chelating agent, for example, glycine or α-alanine, the polishing rate for a copper film shows a maximum as the amount of hydrogen peroxide increases, and the polishing rate tends to decrease when hydrogen peroxide is further added. However, in the case of histidine and its derivative or any one of them, there is almost no change in the polishing rate with respect to the amount of hydrogen peroxide added. In other words, even if the amount of hydrogen peroxide added varies somewhat during polishing, the polishing rate is hardly affected,
As a result, it is considered that excellent polishing controllability is exhibited.

Further, it is considered that the addition of an anticorrosive agent has a function of adsorbing more firmly on the surface of the copper film than histidine and its derivative or any one thereof and protecting the surface of the copper film. Therefore, it is considered that the etching effect on the copper film is suppressed, and a surface having excellent smoothness can be obtained.

When a polishing composition according to the present invention is used to polish a blanket wafer (a wafer on which only a copper or tantalum-containing compound is formed), the polishing rate for the copper film is 4,000 Å / cm. 5,000 Å / min or more due to optimization of polishing conditions, etc., while the polishing rate for the tantalum-containing compound film is 200 Å / min or less,
According to the optimization of the polishing conditions, the polishing rate is 100 Å / min or less, and the copper film can be polished at a high polishing rate, while the tantalum compound can be polished at a low polishing rate. If this is expressed by a selectivity, the selectivity becomes 20 or more and the polishing condition is optimized to 50 or more. With such a high selectivity, the end point of polishing is easily detected, and a high yield is achieved. In other words, the polishing composition according to the present invention can perform the polishing treatment in a short time, improve the quality, and increase the production amount.

[0056]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to examples. The present invention is not limited to the embodiments described below unless departing from the gist thereof.

[0057]

Examples 1 to 23 and Comparative Examples 1 to 4 <Contents and Preparation of Polishing Composition> Colloidal silica, hydrogen peroxide and histidine were mixed as abrasives in the proportions shown in Table 1. Example 1 and 2
3 and each of the polishing compositions of Comparative Examples 1 to 4 were prepared. In Comparative Examples 3 and 4, glycine was mixed instead of histidine. The hydrogen peroxide used was a commercially available 31% aqueous solution and was mixed immediately before polishing.

[0058]

[Table 1]

<Polishing Test> Each of the polishing compositions of Examples 1 to 23 and Comparative Examples 1 to 4 was polished on the film-forming surface of the object to be polished under the following conditions. Object to be polished 6 inch silicon wafer with copper film deposited by 10,000 angstrom by sputtering method, and 6 inch silicon wafer polisher with tantalum film formed by 2,000 angstrom by sputtering method Single-side polishing machine (platen diameter 570 mm) Polishing pad Polyurethane laminated polishing pad (IC-1000 / Suba400, manufactured by Rodale (USA)) Polishing pressure 490 g / cm ² Platen rotation speed 40 rpm Polishing composition supply 50 cc / Minute Polishing time 1 minute after loading wafer with copper film 1 minute instead of wafer with tantalum film

After polishing, the wafers were sequentially washed and dried, and the polishing rate was determined by measuring the thickness reduction of the wafers due to polishing at 49 points. Further, the processed surface after polishing was observed with an optical microscope, and the state of the processed surface after polishing was evaluated based on the following evaluation criteria. Table 1 shows the obtained results.
Shown in ◎: good. ：: Smoothness is slightly impaired. Δ: Although the smoothness is partially impaired, it can be put to practical use. X: The surface is corroded and the smoothness is poor. XX: Severely corroded, and the smoothness is at a level that cannot withstand practical use.

As is clear from Table 1, it was confirmed that Comparative Examples 3 and 4, which did not contain histidine, were eroded on the worked surface after polishing and had poor smoothness. As a result, it is understood that quality cannot be improved and a high yield, that is, an increase in production amount cannot be obtained. In Comparative Example 1 in which the content of the abrasive was too small and in Comparative Example 2 in which the content of histidine was too small, the polishing rate for the copper film was small and the polishing treatment could not be performed in a short time, that is, the production amount could not be increased. Understand. On the other hand, Examples 1 to 17, in which the abrasive, hydrogen peroxide and histidine were contained within the above-described ranges, and Examples 3, 4, 9 to 12, and 15, 16 which were particularly preferred, were polished. The speed is over 4000 Å / min and the selectivity is 5
When it was 0 or more, the processed surface after polishing was also good. In other words, it can be seen that in all of Examples 1 to 23, the polishing rate for the copper film is high, the polishing rate for the tantalum film is low, the selectivity is high, and the processed surface after polishing is excellent in smoothness.

[0062]

As described above, the polishing composition of the present invention comprises (a) an abrasive, (b) histidine and / or one of its derivatives, (c) hydrogen peroxide, (d) )
And water.

Thus, in the CMP process of a semiconductor device including at least a copper film and a tantalum-containing compound film, the copper film can be polished in a short time, and the quality of the object to be polished after polishing can be improved, resulting in a high yield. Thus, a polishing composition capable of producing a semiconductor device can be obtained.

Since the polishing composition according to the present invention further comprises (e) an anticorrosive, the etching effect on the copper film can be suppressed, and the occurrence of surface defects on the surface to be polished can be prevented. . As a result, a polished surface having excellent smoothness can be obtained, and a polishing composition capable of improving quality can be obtained.

In the polishing composition according to the present invention, the abrasive of (a) has a primary particle diameter in the range of 0.005 to 0.3 μm and a content of 5 to 200 g /% with respect to the composition. Since it is within the range of 1 liter, a polishing composition capable of performing mechanical polishing on a copper film in a short time while suppressing mechanical polishing on a tantalum-containing compound film can be obtained.

In the polishing composition according to the present invention, the content of histidine and / or a derivative thereof (b) is in the range of 0.02 to 0.2 mol / l with respect to the composition. Therefore, it is possible to obtain a polishing composition exhibiting an optimum polishing effect by simultaneously exerting a protective film forming effect while promoting polishing of copper.

The polishing composition according to the present invention has a content of hydrogen peroxide of (c) of 0.001 to 2 m with respect to the composition.
Since the amount is within the range of ol / liter, an optimal chemical polishing can be exerted on the copper film, and a polishing composition capable of performing polishing in a short time can be obtained.

The polishing method according to the present invention is a method for polishing a semiconductor device having at least a layer made of copper and a layer made of a tantalum-containing compound on a substrate using the polishing composition. In the CMP process, the polishing rate for the copper film is high, the polishing rate for the tantalum-containing compound is low, the selectivity is high, and the surface to be polished with excellent smoothness can be obtained, and the quality can be improved. Semiconductor devices can be manufactured with a high yield.

[Brief description of the drawings]

FIG. 1 is a diagram showing the structural formulas of histidine and its derivatives.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/306 H01L 21/306 M (72) Inventor Tadahiro Kitamura 2-chome, Nishibiwajima-cho, Nishikasugai-gun, Aichi Prefecture 1 in 1 Fujimi Incorporated Co., Ltd. (72) Inventor Kenji Sakai 2-1-1, Nishibiwajima-cho, Nishi-Kasugai-gun, Aichi Prefecture 1 in 1 Fujimi Incorporated Co., Ltd. (72) Inventor Katsuyoshi Ina Nishi-Kasugai, Aichi Prefecture 1-2-1, Nishibiwajima-cho, Nishi-Nishi-Biwajima-cho F term in Fujimi Incorporated, Inc. (reference) 3C058 CB01 CB03 CB10 DA02 DA12 DA17 5F043 AA26 BB18 DD16 FF07 GG03 GG10

Claims (9)

[Claims] 1. A polishing machine comprising: (a) an abrasive, (b) histidine and / or a derivative thereof, (c) hydrogen peroxide, and (d) water. Composition. 2. The polishing composition according to claim 1, further comprising (e) an anticorrosive. 3. The abrasive material of (a) is silicon dioxide,
Aluminum oxide, cerium oxide, zirconium oxide,
The polishing composition according to claim 1 or 2, wherein the polishing composition is at least one selected from the group consisting of titanium oxide, silicon nitride, and silicon carbide. 4. The method according to claim 1, wherein the abrasive of (a) is at least one selected from the group consisting of fumed silica, colloidal silica, fumed alumina and colloidal alumina. Polishing composition. 5. The abrasive of (a) has a primary particle diameter in the range of 0.005 to 0.3 μm and a content in the range of 5 to 300 g / l with respect to the composition. The polishing composition according to any one of claims 1 to 4, characterized in that: 6. The histidine of (b) and / or its derivative or the content of any one of the histidine and the histidine may be in a range of from 0.
The polishing composition according to any one of claims 1 to 5, wherein the polishing composition is in the range of 03 to 0.5 mol / liter. 7. The method according to claim 1, wherein the content of the hydrogen peroxide of (c) is in the range of 0.001 to 2 mol / l with respect to the composition. Polishing composition. 8. The anticorrosive of (e) is at least one selected from the group consisting of benzotriazole, tolyltriazole, benzimidazole, triazole and imidazole. Polishing composition. 9. A method for polishing a semiconductor device having at least a layer made of copper and a layer made of a tantalum-containing compound on a substrate, using the polishing composition according to claim 1. Characteristic polishing method.