KR102454728B1 - Organic light emitting display device - Google Patents

Abstract

An organic light emitting display device is provided. The organic light emitting diode display includes a driving thin film transistor, a storage capacitor, a first pattern electrode, an anode, a second pattern electrode, and a patterned semiconductor layer. The driving thin film transistor includes an active layer and a gate electrode. The storage capacitor includes a first electrode and a second electrode. The first pattern electrode includes a gate electrode and a first electrode. The anode is disposed on the driving thin film transistor and the storage capacitor. The second pattern electrode is connected to an output electrode connected to the active layer and an anode contact unit connecting the anode. The patterned semiconductor layer may include a second pattern electrode, an active layer having semiconductor characteristics, and a shielding unit having conductor characteristics.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DISPLAY DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device having improved crosstalk, luminance, and image quality by reducing a coupling phenomenon caused by a parasitic capacitor.

An organic light emitting display device is a self-emissive display device, and unlike a liquid crystal display device, it does not require a separate light source, so it can be manufactured in a lightweight and thin shape. In addition, the organic light emitting display device is being studied as a next-generation display because it is advantageous in terms of power consumption due to low voltage driving, and also has excellent response speed, viewing angle, and contrast ratio.

The organic light emitting diode display includes a plurality of wires and a plurality of sub-pixels connected thereto. Each sub-pixel includes an organic light emitting device and a pixel circuit including a thin film transistor and a storage capacitor electrically connected to the organic light emitting device.

Recently, as the resolution of the organic light emitting diode display is improved, a gap between wirings has become dense, and a gap between the wirings and a pixel circuit has become denser. As the distance between the wirings and the pixel circuit becomes dense, various signals are coupled as the pixel circuit and the wirings form a parasitic capacitor. In particular, when a coupling phenomenon occurs between the data line and the gate electrode of the driving thin film transistor, the current amount of the driving current provided to the organic light emitting diode changes, and thus the image quality of the conventional organic light emitting diode display may deteriorate. have.

Specifically, the image quality deterioration has problems such as crosstalk and luminance deterioration. Crosstalk occurs when, for example, white and black patterns are displayed on a display device, when an electrical load difference for each area of the display device is large, a coupling phenomenon increases, so that the luminance of the black pattern is increased by the white pattern. It could mean rising. The decrease in luminance may mean that when an image signal to be originally displayed is input to the pixel, a coupling phenomenon increases and the luminance of the pixel decreases. That is, the coupling phenomenon forms an unwanted electric field, which causes image quality to deteriorate.

1A and 1B are schematic cross-sectional views and plan views for explaining a coupling phenomenon caused by a parasitic capacitance Cp in a conventional organic light emitting diode display. The organic light emitting device 160 includes an anode 161 , an organic light emitting layer 162 , and a cathode 163 . The organic light emitting diode 160 emits light having a wavelength in the visible ray region. And the luminance of light is determined based on the amount of driving current flowing through the anode 161 . And the amount of driving current is controlled by the driving thin film transistor 120 connected to the anode 161 .

The driving thin film transistor 120 includes an active layer 121 , a gate electrode 122 overlapping the active layer 121 , an input electrode 123 connected to the active layer 121 , and an output electrode 124 . The active layer 121 may refer to a channel or a semiconductor layer.

The input electrode 123 of the driving thin film transistor 120 is connected to the VDD wiring 152 , and the driving current received through the VDD wiring 152 passes through the active layer 121 and the output electrode 124 to the anode 161 . ) is introduced into The amount of driving current flowing through the active layer 121 of the driving thin film transistor 120 is controlled by the voltage of the image signal supplied through the data line 151 .

An overlapping region of the first electrode 132 and the second electrode 131 may be regarded as the storage capacitor 130 . The data voltage (image signal) is applied to the first electrode 132 to be charged in the storage capacitor 130 .

The gate electrode 122 is connected to the first electrode 132 of the storage capacitor 130 . Therefore, the potential difference of the first electrode 132 and the potential difference of the gate electrode 122 are equal to each other.

The output electrode 124 is connected to the second electrode 131 of the storage capacitor 130 . The storage capacitor 130 maintains the turned-on state of the driving thin film transistor 120 during the emission period in which the organic light emitting diode 160 emits light.

A data line 151 is disposed adjacent to the storage capacitor 130 . The data line 151 is a line for transmitting a data voltage (image signal). In the high-resolution organic light emitting diode display 100 , as the distance between the lines and the thin film transistor becomes narrower, the distance between the data line 151 and the first electrode 132 of the storage capacitor 130 may become narrower. As the distance between the data line 151 and the first electrode 132 of the storage capacitor 130 decreases, a capacitance between the data line 151 and the first electrode 132 of the storage capacitor 130 decreases. is created For convenience of description, a capacitance formed between the first electrode 132 of the storage capacitor 130 and the data line 151 is defined as a parasitic capacitance Cp.

More specifically, a data voltage (image signal) is supplied to the first electrode 132 through the data line 151 and stored in the first electrode 131 of the storage capacitor 130 , and the first electrode 132 . is in a floating state during the emission interval. In the meantime, the data line 151 sequentially supplies various data voltages to other sub-pixels of the organic light emitting diode display according to the scan signal. The first electrode 132 and the data line 151 are coupled to each other to generate a parasitic capacitance Cp. In addition, since the first electrode 132 is in a floating state, it is affected by various data voltages supplied to other sub-pixels.

The potential difference between the first electrode 132 and the data line 151 tends to be maintained by the parasitic capacitance Cp. That is, since the first electrode 132 is in a floating state, the data voltage stored in the first electrode 132 is uniformly applied to the data line 151 by the parasitic capacitance Cp to maintain a uniform potential difference with the data line 151 . ) is shaken by various data voltages passing through it.

Accordingly, the voltage of the gate electrode 122 of the driving thin film transistor 120 fluctuates according to the fluctuation of the data voltage stored in the first electrode 132 . The voltage of the gate electrode 122 controls the conductivity or electrical resistance of the active layer 121, which is a semiconductor material that controls the amount of current. When the voltage of the gate electrode 122 is changed, the amount of current applied to the organic light emitting diode 160 also changes accordingly. As a result, the luminance of the organic light emitting device 160 is changed.

That is, the first electrode 132 of the storage capacitor 130 and the data line 151 are coupled to each other by the parasitic capacitance Cp. That is, the voltage of the first electrode 132 of the storage capacitor 130 may change according to a change in the data voltage applied to the data line 151 . In particular, as the difference between the data voltage stored in the first electrode 132 and the data voltage currently applied to the data line increases, the degree of crosstalk increases.

In more detail, since the capacitor has a characteristic of maintaining the voltage across both ends, when the data voltage applied to the data line 151 changes, the voltage of the first electrode 132 of the storage capacitor 130 also changes. Since the first electrode 132 of the storage capacitor 130 is connected to the gate electrode 122 of the driving thin film transistor 120 , when the data voltage applied to the data line 151 changes, The gate voltage of the gate electrode 122 also changes. That is, the gate voltage of the gate electrode 122 and the data voltage stored in the first electrode 132 are equal to each other.

As the gate voltage of the gate electrode 122 of the driving thin film transistor 120 is changed, the amount of current of the driving current transmitted to the anode 161 through the driving thin film transistor 120 is changed. That is, when the potential difference between the gate electrode 122 and the output electrode 124 of the driving thin film transistor 120 is maintained constant, the amount of current of the driving current may be maintained constant. However, since the gate electrode 122 and the data line 151 of the driving thin film transistor 120 are coupled to each other, the driving thin film transistor 120 does not maintain a constant driving current. In particular, this problem becomes more serious as the pixel per inch (ppi) of the organic light emitting diode display increases. Hereinafter, the ability to constantly maintain the amount of driving current flowing through the driving thin film transistor 120 is defined as a current holding ratio (CHR). Hereinafter, a phenomenon in which the amount of driving current flowing through the driving thin film transistor 120 is coupled to image signals of different sub-pixels to increase luminance is defined as crosstalk. As the current retention rate of the driving thin film transistor 120 decreases, the luminance of the organic light emitting diode 160 gradually decreases, and a data voltage applied to sub-pixels having different luminance of the organic light emitting diode 160 due to crosstalk. is coupled by Accordingly, the image quality of the organic light emitting diode display is deteriorated. Also, as the parasitic capacitance increases, the image quality of the organic light emitting diode display deteriorates.

According to the inventors of the present invention, in a high-resolution organic light emitting display device, the gap between the first electrode of the storage capacitor connected to the gate electrode of the driving thin film transistor and the data line is dense, so that parasitic capacitance is generated therebetween, and the data is generated by the parasitic capacitance It was recognized that as the wiring and the gate electrode of the driving thin film transistor were coupled, the driving current transferred to the organic light emitting diode was changed. That is, the luminance of the organic light emitting device is determined based on the amount of current of the driving current. If the gate electrode of the driving thin film transistor and the data line are coupled to each other, the charging voltage of the storage capacitor during the emission period in which the organic light emitting device emits light. is changed, so the voltage of the gate electrode of the driving thin film transistor changes. Accordingly, the inventors of the present invention have invented a new organic light emitting diode display including a shield unit in order to reduce a coupling phenomenon between the gate electrode of the driving thin film transistor and the data line.

Accordingly, an object of the present invention is to reduce the parasitic capacitance between the first electrode of the storage capacitor and the data line through the shield, thereby reducing the coupling phenomenon between the gate electrode and the data line of the driving thin film transistor. To provide a light emitting display device.

Another object of the present invention is to provide an organic light emitting diode display capable of improving the current retention rate of the driving thin film transistor without a separate additional process by forming the shield part to extend from the active layer of the driving thin film transistor.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

In order to solve the above problems, an organic light emitting diode display according to an exemplary embodiment includes a driving thin film transistor, a storage capacitor, a first pattern electrode, an anode, a second pattern electrode, and a patterned semiconductor layer. The driving thin film transistor includes an active layer and a gate electrode. The storage capacitor includes a first electrode and a second electrode. The first pattern electrode includes a gate electrode and a first electrode. The anode is disposed on the driving thin film transistor and the storage capacitor. The second pattern electrode is connected to an output electrode connected to the active layer and an anode contact unit connecting the anode. The patterned semiconductor layer may include a second pattern electrode, an active layer having semiconductor characteristics, and a shielding unit having conductor characteristics.

According to another feature of the present invention, it is characterized in that it further includes a data line configured to overlap the shield portion which is a part of the panned semiconductor layer.

According to still another feature of the present invention, it further includes a data line, wherein a distance between one boundary of the first electrode and one boundary of the adjacent shield unit is greater than a distance between one boundary of the first electrode and one boundary of the adjacent data line. characterized in that

According to another feature of the present invention, a portion of the shield portion overlapping the first pattern electrode is configured to have a semiconductor characteristic.

According to another feature of the present invention, the active layer overlapping the first pattern electrode is configured to have a semiconductor characteristic, and a portion of the shield portion exposed by extending more than the first pattern electrode is configured to have a conductor characteristic. do.

According to another feature of the present invention, the anode contact portion of the second pattern electrode is characterized in that it is connected to the shield portion and the output electrode.

According to another feature of the present invention, it is characterized in that it is configured to further include a first shield capacitance variable based on an image signal between the patterned semiconductor layer and the first pattern electrode.

According to another feature of the present invention, it further includes a data line, and one boundary of the second pattern electrode is further extended toward the data line than the first pattern electrode.

According to another feature of the present invention, it further includes a data line, and one boundary of the patterned semiconductor layer is further extended toward the data line than the second pattern electrode.

According to another feature of the present invention, the organic light emitting diode display further includes a data line, one boundary of the second pattern electrode extends toward the data line more than the first pattern electrode, and one boundary of the patterned semiconductor layer is larger than that of the patterned semiconductor layer. Characterized by less elongation.

According to another feature of the present invention, the organic light emitting diode display further includes a VDD line, and the shield part is electrically connected to the VDD line.

According to another feature of the present invention, the shield portion is characterized in that it extends to overlap the VDD wiring.

According to another aspect of the present invention, the organic light emitting diode display further includes a data line, the shield unit does not generate a first shield capacitance between the first electrode and the shield unit, and a second shield is formed between the data line and the shield unit. It is characterized in that it is configured such that only capacitance is generated.

According to another aspect of the present invention, the shield portion extends along the data line from the active layer so that the area where the shield portion overlaps the first electrode is minimized.

According to another feature of the present invention, it further includes an input electrode connected to the data line and the active layer, wherein a portion of the patterned semiconductor layer extends from the input electrode in the direction of the data line.

In order to solve the above problems, an organic light emitting diode display according to another exemplary embodiment includes a shield unit, a driving thin film transistor, a storage capacitor, and a data line. The shield part is electrically connected to the VDD wiring. The driving thin film transistor includes an input electrode, a gate electrode, and an output electrode, and is connected to the VDD wiring. The storage capacitor is disposed on the shield part and includes a first electrode connected to the gate electrode and a second electrode connected to the output electrode. The data line includes an anode disposed on the driving thin film transistor and the storage capacitor and connected to the second electrode, and the data line disposed adjacent to the shield portion compared to the first electrode. At least a portion of the shield portion disposed adjacent to the data line is a conductor.

According to another feature of the present invention, a portion of the shield portion overlaps with the data line, and a portion of the shield portion overlaps with the data line is a conductor.

According to another feature of the present invention, the shield portion is connected to the input electrode of the driving thin film transistor and is electrically connected to the VDD wiring.

According to another feature of the present invention, the shield portion is connected to the output electrode of the driving thin film transistor and is electrically connected to the VDD wiring through the active layer.

According to another feature of the present invention, the predetermined region of the shield portion is a patterned semiconductor layer overlapping the first electrode, and is configured to generate a variable capacitance based on an image signal value stored in the first electrode. do.

The details of other embodiments are included in the detailed description and drawings.

Since the present invention includes a shield portion overlapping the first electrode of the storage capacitor connected to the gate electrode of the driving thin film transistor, the capacitance of the parasitic capacitor formed between the first electrode of the storage capacitor and the data line is reduced, and the gate electrode of the driving thin film transistor is reduced. A phenomenon in which the gate voltage applied to the , and the data voltage applied to the data line are coupled is reduced.

In addition, since the present invention includes the shield portion extending from the active layer of the driving thin film transistor, there is an effect that a separate additional process is not required to reduce the capacitance of the parasitic capacitor.

The effect according to the present invention is not limited by the contents exemplified above, and more various effects are included in the present specification.

1A is a schematic plan view for explaining a coupling phenomenon caused by a parasitic capacitor in a conventional organic light emitting diode display.
1B is a schematic cross-sectional view taken along line I-I' of FIG. 1A.
2A to 2C are schematic plan views illustrating an organic light emitting diode display according to an exemplary embodiment.
FIG. 2D is a schematic cross-sectional view taken along line II-II' of FIG. 2C.
2E is a graph for explaining an effect of an organic light emitting diode display according to an exemplary embodiment.
3 is a schematic plan view illustrating an organic light emitting diode display according to another exemplary embodiment.
4A is a schematic plan view illustrating an organic light emitting diode display according to another exemplary embodiment.
4B is a schematic cross-sectional view taken along IV-IV' of FIG. 4A.
5 is a schematic plan view illustrating an organic light emitting diode display according to another exemplary embodiment.
6A is a schematic cross-sectional view illustrating an organic light emitting diode display according to another exemplary embodiment.
6B is a schematic cross-sectional view taken along VI-VI' of FIG. 6A.
7A is a schematic cross-sectional view illustrating an organic light emitting diode display according to another exemplary embodiment.
7B is a schematic cross-sectional view taken along line VII-VII' of FIG. 7A.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative and the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless specifically stated otherwise.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between two parts unless 'directly' is used.

When a device or layer is referred to as 'on' another device or layer, it includes any other layer or layer interposed therebetween or directly on the other device.

Although first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Like reference numerals refer to like elements throughout.

The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated component.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A to 2C are schematic plan views illustrating an organic light emitting diode display according to an exemplary embodiment. FIG. 2D is a schematic cross-sectional view taken along line II-II' of FIG. 2C. For convenience of explanation, two sub-pixels are schematically illustrated in FIGS. 2A to 2C , and each sub-pixel includes two thin film transistors and one capacitor. (This structure is hereinafter referred to as a 2T1C structure.) However, in the present invention, the structure of the sub-pixel is not limited to the 2T1C structure, and each sub-pixel has various additional compensation structures such as 3T1C, 4T2C, 5T2C, 6T2C or 7T2C. It may be configured to include The additional compensation structure may include, for example, an initialization circuit for discharging a data voltage of a previous frame, a threshold voltage compensation circuit for compensating for a threshold voltage deviation, or a light emitting period of the organic light emitting diode 120 . There is an emission control circuit for controlling the .

The organic light emitting diode display 200 according to an embodiment of the present invention is a top emission type organic light emitting diode display 200 in which light emitted from the organic light emitting diode 260 is emitted toward the top surface of the substrate 210 . The organic light emitting diode display 200 may be a bottom emission type organic light emitting diode display 200 in which light emitted from the organic light emitting diode 260 is emitted toward the lower surface of the substrate 210 . For convenience of description, the top emission type organic light emitting diode display 200 is illustrated in FIGS. 2A to 2D , respectively.

The organic light emitting diode display 200 includes a substrate 210 , a data line 251 , a gate line 253 , a VDD line 252 , a switching thin film transistor 240 , a storage capacitor 230 , and a driving thin film transistor 220 . , and an organic light emitting device 260 and a shield unit 280 (see FIG. 2D ).

The substrate 210 is a substrate for supporting various components of the organic light emitting diode display 200 , and may be a glass substrate or a transparent plastic substrate having excellent transmittance. The substrate 210 includes a plurality of display areas DA1 and DA2 and a non-display area NA (refer to FIGS. 2A to 2D ). The display areas DA1 and DA2 are areas in which the organic light emitting diode 260 is disposed, which means an area in which an image is displayed, and may also be referred to as a pixel area or sub-pixels. The non-display area NA refers to an area other than the display areas DA1 and DA2.

The data line 251 and the gate line 253 are disposed to cross each other on the substrate 210 (refer to FIG. 2C ). The data line 251 and the gate line 253 are disposed in the non-display area NA of the substrate 210 , and an area defined by crossing the data line 251 and the gate line 253 is the display area DA1 , DA2). However, the present invention is not limited thereto. Although the data line 251 and the gate line 253 have been described as having a linear shape, the data line 251 and the gate line 253 may have an oblique line, a curved line, or a zigzag shape. That is, the shapes of the data line 251 and the gate line 253 are not limited.

The driving thin film transistor 220 and the switching thin film transistor 240 each include an active layer, a gate electrode, an input electrode, and an output electrode, and may be a thin film transistor made of a P-type semiconductor material or a thin film transistor made of an N-type semiconductor material. An input electrode of the N-type thin film transistor (see FIGS. 2C to 2D ) may be referred to as a drain electrode, and an output electrode may be referred to as a source electrode. In addition, each of the driving thin film transistor 220 and the switching thin film transistor 240 has a coplanar structure in which a gate electrode is disposed on an active layer or an inverted-staggered structure in which a gate electrode is disposed under the active layer. staggered) structure. For convenience of explanation, the driving thin film transistor 220 and the switching thin film transistor 240 shown in FIGS. 2C and 2D have a coplanar structure.

The input electrode of the switching thin film transistor 240 is connected to the data line 251 (refer to FIG. 2C). The input electrode of the switching thin film transistor 240 may be a portion of the data line 251 extended. However, the present invention is not limited to the shape of the input electrode of the switching thin film transistor 240 .

The gate electrode of the switching thin film transistor 240 may be a portion of the gate wiring 253 and may be disposed together with the gate wiring 253 . A portion of the active layer of the switching thin film transistor 240 overlaps the gate wiring 253 . Accordingly, the active layer region overlapping the gate wiring 253 may be referred to as a gate electrode of the switching thin film transistor 240 . That is, the gate electrode of the switching thin film transistor 240 may be a part of the gate wiring 253 . However, the present invention is not limited to the shape of the gate electrode of the switching thin film transistor 240 .

The active layer of the switching thin film transistor 240 is formed of a semiconductor material. A portion of the active layer of the switching thin film transistor 240 overlaps the gate wiring 253 . The output electrode of the switching thin film transistor 240 is connected to the first electrode 232 . According to the above-described configuration, the switching thin film transistor 240 may be disposed in a narrow space with a simple structure and efficient space utilization. That is, the structure is suitable when the organic light emitting diode display 200 has a high resolution. When a turn-on voltage is applied to the gate wiring 253 , a data voltage is supplied to the first electrode 232 through the switching thin film transistor 240 to store an image signal. When a turn-off voltage is applied to the gate wiring 253 , the first electrode 232 is in a floating state to maintain the stored data voltage.

2A to 2D , the storage capacitor 230 includes a first electrode 232 and a second electrode 231 . The first electrode 232 of the storage capacitor 230 is connected to the output electrode of the switching thin film transistor 240 (hereinafter referred to as the first electrode 232 ) and the gate electrode 222 of the driving thin film transistor 220 . The first electrode 232 may simultaneously function as a node connecting the gate electrode 222 of the driving thin film transistor 220 and the output electrode of the switching thin film transistor 240 .

The second electrode 231 of the storage capacitor 230 (hereinafter referred to as a second electrode 231 ) is connected to the output electrode 224 of the driving thin film transistor 220 and the organic light emitting diode 260 .

The driving thin film transistor 220 is an N-type thin film transistor, but is not limited thereto. The driving thin film transistor 220 includes an active layer 221 , a gate electrode 222 , an input electrode 223 , and an output electrode 224 . The active layer 221 of the driving thin film transistor 220 (hereinafter referred to as the active layer 221 ) is formed of a semiconductor material. The gate electrode 222 of the driving thin film transistor 220 overlaps the active layer 221 (hereinafter referred to as the gate electrode 222 ). The gate electrode 222 supplies an electric field to the active layer 221 based on a data voltage corresponding to the grayscale value stored in the storage capacitor 230 to precisely control the conductivity of the active layer 221 . , configured to adjust the amount of current supplied to the organic light emitting device 260 . Therefore, if the voltage at the gate electrode 222 fluctuates even a little, image quality is deteriorated.

The gate electrode 222 may be formed of the same metal as the first electrode 232 . In addition, the gate electrode 222 may be a portion extending from the first electrode 232 . In particular, the gate electrode 222 and the first electrode 232 may be the same metal layer. The gate electrode 222 and the first electrode 232 that are part of the same patterned metal layer may be referred to as a “first pattern electrode”. That is, a part of the first pattern electrode is configured to function as the first electrode 232 and another part to function as the gate electrode 222 . That is, the first pattern electrode may be configured to have a specific shape for simultaneously performing the functions of the first electrode 232 and the gate electrode 222 .

The input electrode 223 of the driving thin film transistor 220 is connected to the VDD wiring 252 (hereinafter referred to as the input electrode 223 ) and a portion of the active layer 221 of the driving thin film transistor 220 . The VDD line 252 is separated from the data line 251 , the VDD line 252 is spaced apart from the data line 251 , and supplies a driving current to the organic light emitting diode 260 . For example, it may be connected to the input electrode 223 through the connection wiring 254 disposed under the VDD wiring 252 . However, the input electrode 223 is not limited thereto, and may be connected without the connection wire 254 . The VDD wiring 252 may be formed of the same metal as the data wiring 251 on the same plane.

The output electrode 224 of the driving thin film transistor 220 is connected to the second electrode 231 (hereinafter referred to as the output electrode 224 ), another part of the active layer 221 , and the organic light emitting device 260 . The output electrode 224 is configured to transmit a current passing through the active layer 221 to the organic light emitting device 260 . The output electrode 224 is formed of the same metal as the second electrode 231 . Specifically, the output electrode 224 and the second electrode 231 may be the same metal layer. That is, the output electrode 224 may be a portion extending from the second electrode 231 . In other words, the output electrode 224 and the second electrode 231 that are part of the same patterned metal layer may be referred to as a “second pattern electrode”. That is, the second pattern electrode includes a part configured to function as the output electrode 224 and another part configured to function as the second electrode 231 of the storage capacitor 231 . In addition, the second pattern electrode may further include an anode contact portion 261c connected to the anode 261 of the organic light emitting diode 260 . That is, the second pattern electrode may be configured to have a specific shape for simultaneously performing the function of the anode contact unit 261c connecting the storage capacitor 231 , the output electrode 224 , and the anode 261 . For example, the second electrode 231 may be formed of the same metal as the data line 251 . For example, the anode contact portion 261c may be disposed in a region where the second electrode 231 overlaps the first electrode 232 . In particular, according to the above-described structure, the anode contact portion 261c does not increase the area of the second electrode 231 and can be connected to the anode 261 .

Accordingly, the driving current supplied through the VDD wiring 252 is supplied to the organic light emitting device 260 through the input electrode 223 , the active layer 221 , the output electrode 224 , and the anode contact portion 261c . When the organic light emitting diode display 200 is the high resolution organic light emitting diode display 200 , since as many sub-pixels as possible should be arranged in a limited area, the size of the display areas DA1 and DA2 may be reduced. Accordingly, the first electrode 232 and the data line 251 of the storage capacitor 230 are disposed adjacent to each other. For example, the first electrode 232 may be spaced apart from the data line 251 by about 8 μm or less. In addition, the parasitic capacitance Cp is capable of generating a sufficient coupling phenomenon.

The shield part 280 is disposed under the first electrode 232 of the storage capacitor 230 , and a part of the shield part 280 overlaps a part of the first electrode 232 (see FIGS. 2B and 2D ). . The shield part 280 is formed of the same material as the active layer 221 . Specifically, the active layer 221 and the shield portion 280 may be formed of the same semiconductor material. That is, the active layer 221 may be a portion extending from the shield portion 280 . That is, the shield unit 280 is connected to the active layer 221 . A portion of the semiconductor layer configured to perform the function of the active layer 221 and a portion of the semiconductor layer configured to perform the function of the shield unit 280 may be referred to as a “patterned semiconductor layer”. That is, the patterned semiconductor layer may include an active layer 221 and a shield portion 280 . That is, the patterned semiconductor layer may be configured to have a specific shape for performing the functions of the active layer 221 and the shield unit 280 .

Referring to FIGS. 2B and 2D , the shield part 280 is formed of a semiconductor material, but a portion of the shield part 280 may have a conductor characteristic. And another part can maintain semiconductor properties. Specifically, during the manufacturing process, the first pattern electrode may be used as a mask for the process of converting a semiconductor to a conductor. In this case, the region where the patterned semiconductor layer and the first pattern electrode overlap maintains the semiconductor characteristics. On the other hand, a region of the patterned semiconductor layer that is not covered by the first pattern electrode and is exposed has a conductor characteristic.

For example, the patterned semiconductor layer may be silicon, amorphous silicon, poly-silicon, or low-temperature poly-silicon (LTPS). In addition, the exposed region of the patterned semiconductor layer (refer to FIG. 2B ) may be doped with a P-type dopant, for example, a material such as boron, to become a conductor.

For example, the patterned semiconductor layer may be an oxide semiconductor layer. As the oxide semiconductor, indium gallium zinc oxide (InGaZnO), indium tin zinc oxide (InSnZnO), indium zinc oxide (InZnO), tin zinc oxide (SnZnO), or the like may be used. In addition, the exposed region (refer to FIG. 2B ) of the patterned semiconductor layer through plasma treatment may be made into a conductor.

For example, the patterned semiconductor layer may include both an oxide semiconductor and low-temperature polysilicon. That is, a portion of the patterned semiconductor layer may be formed of an oxide semiconductor, and a portion other than the portion may be formed of low-temperature polysilicon. In this case, the exposed region (see FIG. 2B ) in one part of the patterned semiconductor layer formed of the oxide semiconductor can be made conductive through plasma treatment, and the exposed region in the other part of the patterned semiconductor layer formed of low-temperature polysilicon. may be conductive through a P-type dopant.

The shield unit 280 is disposed on the buffer layer 271 on the substrate 210 . The buffer layer 271 prevents penetration of moisture or impurities through the substrate 210 . Since the buffer layer 271 is not a necessary configuration, in some embodiments, the buffer layer 271 may be omitted.

One boundary of the shield unit 280 may protrude more toward the data line 251 than one boundary of the first electrode 232 of the storage capacitor 230 . For example, assuming that the shield unit 280 and the first electrode 232 are on the same plane, one boundary of the shield unit 280 is greater than a boundary of the first electrode 232 of the storage capacitor 230 . It may protrude by a predetermined distance d (refer to FIG. 2D). For convenience of description, this is defined as the protrusion distance d. Although one boundary of the shield unit 280 shown in FIG. 2D is illustrated as overlapping the data line 251 , one boundary of the shield unit 280 is a boundary of a region where the first electrode 232 is disposed. and a boundary of a region in which the data line 251 is disposed. That is, the protrusion distance d may be smaller than a distance between one boundary of the first electrode 232 and one boundary of the data line 251 .

A gate insulating layer 272 is disposed on the shield portion 280 . The shield portion 280 and the first electrode 232 of the storage capacitor 230 are insulated by the gate insulating layer 272 , and the active layer 221 and the gate electrode 222 are insulated from each other. As the organic light emitting diode display 200 becomes thinner, the gate insulating layer 272 is formed to have a thin thickness. For example, the gate insulating layer 272 may be formed to a thickness of about 1000 Å (100 nm), but the thickness of the gate insulating layer 272 is not limited thereto.

The interlayer insulating layer 273 is disposed to cover the first pattern electrode including the gate electrode 222 and the first electrode 232 . A second electrode 231 connected to the output electrode 224 is disposed on the interlayer insulating layer 273 , and the second electrode 231 and the first electrode 232 are insulated by the interlayer insulating layer 273 . As the organic light emitting diode display 200 becomes thinner, the interlayer insulating layer 273 is formed to have a thin thickness. For example, the interlayer insulating layer 273 may be formed to a thickness of about 4000 Å (400 nm), but the thickness of the interlayer insulating layer 273 is not limited thereto.

An input electrode 223 and an output electrode 224 are disposed on the interlayer insulating layer 273 . For example, a contact hole is provided in the interlayer insulating layer 273 and the gate insulating layer 272 , and the input electrode 223 and the output electrode 224 are connected to the active layer 221 through the contact hole.

A planarization layer 274 is disposed to cover the driving thin film transistor 220 , and an organic light emitting device 260 is disposed on the planarization layer 274 . The planarization layer 274 compensates for a step caused by the driving thin film transistor 220 , the data line 251 , and the VDD line 252 , and planarizes the upper surface of the substrate 210 . The organic light emitting device 260 includes an anode 261 , an organic light emitting layer 262 , and a cathode 263 , and is disposed in the light emitting area DA1 . The anode 261 provides holes to the organic light emitting layer 262 , and the cathode 263 provides electrons to the organic light emitting layer 262 . That is, the driving current received through the driving thin film transistor 220 flows from the anode 261 to the cathode 263 through the organic emission layer 262 . The cathode 263 may be electrically connected to a voltage supply pad unit disposed in an outer region of the substrate 210 , and a VSS voltage may be applied to the cathode 263 from the voltage supply pad unit.

The data line 251 and the VDD line 252 are respectively disposed on the interlayer insulating layer 273 . As described above, the data line 251 and the first electrode 232 are disposed adjacent to each other. As described above, the distance between the first electrode 232 and the data line 251 is less than or equal to about 8 μm, so the coupling phenomenon between the first electrode 232 and the data line 251 becomes negligible. . Accordingly, a capacitance is generated between the first electrode 232 and the data line 251 , and this is defined as a parasitic capacitance Cp. The parasitic capacitance Cp may increase as the distance between the data line 251 and the first electrode 232 of the storage capacitor 230 decreases. A region where the first electrode 232 and the second electrode 231 overlap is defined as a storage capacitor Cst.

Similarly, since the shield part 280 and the first electrode 232 are spaced apart from each other with the gate insulating layer 272 having a thin thickness therebetween, capacitance is generated. This is defined as the first shield capacitance Cs1. In addition, since the shield unit 280 and the data line 251 are spaced apart from each other with the gate insulating layer 272 and the interlayer insulating layer 273 interposed therebetween, capacitance is generated. This is defined as the second shield capacitance (Cs2).

The parasitic capacitance Cp generated between the data line 251 and the first electrode 232 is the second generated between the data line 251 and the area of the shield portion 280 extending in the data line 251 direction. It can be reduced by the shield capacitance (Cs2). An electric field is generated between the extended area of the shield unit 280 and the data line 251 . Also, due to the electric field generated between the extended region of the shield unit 280 and the data line 251 , the electric field generated between the first electrode 232 and the data line 251 is reduced. Accordingly, the parasitic capacitance Cp is reduced. Alternatively, as compared with an organic light emitting display device without the shield unit 280 , the extended area of the shield unit 280 includes the first electrode 232 and the data line 251 due to the extended area of the shield unit 280 . It has the function of taking away a part of the electric field generated between them.

The extended region of the shield portion 280 is formed of a semiconductor material, but is configured to have conductivity. Accordingly, the extended region of the shield portion 280 may effectively take away a portion of the electric field directed to the first electrode 232 .

When the voltage of the first electrode 232 is shaken, it directly affects the amount of current flowing into the organic light emitting device 260 . However, since the gate electrode 222 and the shield part 280 are electrically insulated from each other, even if a voltage fluctuation occurs in the shield part 280 , it does not directly affect the voltage of the electrically insulated gate electrode 222 . That is, even when the second shield capacitance Cs2 is generated, image quality is not deteriorated, but rather the parasitic capacitance Cp is reduced. Accordingly, crosstalk of the organic light emitting diode display 200 may be reduced by the shield unit 280 and luminance may be improved, so that image quality may be improved.

In particular, since the shield unit 280 is connected to the VDD wiring 251 that supplies a DC voltage through the active layer 221 , even when the second shield capacitance Cs2 is generated, the voltage value of the shield unit 280 is Compared to the first electrode 231 , it is maintained relatively stable. That is, the influence of the second shield capacitance Cs2 may be minimized by the stable VDD voltage supplied through the VDD wiring 251 .

As described above, a coupling phenomenon between the data line 251 and the first electrode 232 is reduced. And the parasitic capacitance (Cp) is also reduced. As the protruding area of the shield part 280 increases, the coupling effect between the data line 251 and the first electrode 232 may also be effectively reduced. That is, as the projection distance d of the shield unit 280 increases, the electric field generated between the first electrode 232 of the storage capacitor 230 and the data line 251 may be more effectively reduced, and the parasitic capacitance Cp ) can be further reduced. For example, if a distance from one boundary of the data line 251 to one boundary of the first electrode 232 of the storage capacitor 230 is 6.5 μm and the shield unit 280 does not exist, the parasitic capacitor Cp ) has a capacitance of 2.57fF. On the other hand, when the shield part 280 is disposed to overlap the first electrode 232 of the storage capacitor 230 and the protrusion distance d of the shield part 280 is 0.5 μm, the capacitance of the parasitic capacitor Cp can be reduced to 1.27fF. Also, when the protrusion distance d of the shield portion 280 is 6.5 μm, the capacitance of the parasitic capacitor Cp may be reduced to 0.52 fF.

The shield portion 280 includes a portion extending from the active layer 221 . In addition, the shield unit 280 may be electrically connected to the output electrode 224 . Accordingly, the first shield capacitance Cs1 and the second shield capacitance Cs2 are electrically connected to the output electrode 224 . And when the driving thin film transistor 220 is turned on, the active layer 221 conducts and the output electrode 224 is electrically connected to the input electrode 223 . Accordingly, the first shield capacitance Cs1 and the second shield capacitance Cs2 are electrically connected to the VDD wiring 252 through the driving thin film transistor 220 . In this case, since the VDD line is a stable voltage source, the first shield capacitance Cs1 and the second shield capacitance Cs2 are relatively less affected by the coupling phenomenon by the data line 251 .

If there is no shield part 280 , the first shield capacitance Cs1 and the second shield capacitance Cs2 are omitted, and only the parasitic capacitance Cp is generated between the first electrode 232 and the data line 251 . . Accordingly, by disposing the shield unit 280 , the parasitic capacitance Cp may be reduced compared to the case in which the shield unit 280 is not provided.

Meanwhile, if the shield unit 280 is formed in the form of an island between the data line 251 and the first electrode 232 without extending from the active layer 221 of the driving thin film transistor 220 , the data line A coupling phenomenon between the 251 and the gate electrode 222 may not be reduced. If the shield part is formed in an island shape between the data line 251 and the first electrode 232 , the island-shaped shield part is in an electrically floating state. If the switching thin film transistor 240 is turned on, the first electrode 232 is charged with the data voltage applied from the data line 251 , and the first shield capacitance Cs1 is charged with the same data voltage. However, when the switching thin film transistor 240 is turned off in the light emitting period, the first shield capacitance Cs1 is in an electrically floating state, and thus the voltage of the first electrode 232 cannot be maintained. Accordingly, the voltage of the first electrode 232 is gradually decreased, and as the potential difference between the gate electrode 222 and the output electrode 224 is decreased, the amount of current of the driving current is decreased. Accordingly, the luminance of the organic light emitting diode 260 is reduced even if the shield part in the floating state is present.

On the other hand, when the shield unit 280 according to an embodiment of the present invention is formed to extend from the active layer 221 of the driving thin film transistor 220 , the shield unit 280 is formed to extend through the active layer 221 . Since it may be connected to the input electrode 223 or the output electrode 224 of the transistor 220 and electrically connected to the VDD wiring 252 , the first shield capacitance Cs1 and the second shield capacitance Cs2 are electrically does not float In this case, the driving thin film transistor 220 may maintain a constant current amount of the driving current. Specifically, since the first shield capacitor Cs1 receives a stable VDD voltage through the VDD wiring 252 in the light emitting period and is not electrically floating, the first shield capacitance Cs1 is connected to the VDD wiring 252 A potential difference between the first electrodes 232 may be maintained, and the voltage of the first electrode 232 is maintained by the first shield capacitance Cs1 and the storage capacitor 230 . That is, the first shield capacitance Cs1 functions as another storage capacitor to maintain the turned-on state of the driving thin film transistor 220 .

Also, the first shield capacitance Cs1 operates as a variable capacitance. Referring back to FIG. 2B , the shield portion 280 overlapping the first electrode 232 has a semiconductor characteristic. Accordingly, the capacitance of the first shield capacitance Cs1 is varied based on the data voltage (image signal) stored in the first electrode 232 .

The variable capacitance has a larger capacity when displaying a higher luminance image. That is, when a higher data voltage is input to the first electrode 232 , the conductivity of the semiconductor layer of the shield unit 280 overlapping the first electrode 232 corresponds to the data voltage value stored in the first electrode 232 . will increase Alternatively, the electrical resistance is reduced corresponding to the data voltage value stored in the first electrode 232 . Accordingly, even if the gate electrode 222 of the driving thin film transistor 220 is coupled to the data line 251 by the parasitic capacitor Cp, two capacitors (that is, the storage capacitor (that is, the storage capacitor) connected in parallel with the gate electrode 222 230) and the first shield capacitor Cs1), a potential difference between the gate electrode 222 and the output electrode 224 of the driving thin film transistor 220 may be maintained. Accordingly, compared to the case in which the shield unit 280 is not provided, the current amount of the driving current may be maintained constant in the light emitting section, and the luminance of the organic light emitting diode 260 may be maintained constant.

As a result, in the organic light emitting diode display 200 according to an embodiment of the present invention, since the shield unit 280 is electrically connected to the VDD wiring 252 , the data line 251 and the first first of the storage capacitor 230 . The capacitance of the parasitic capacitor Cp formed by the electrode 232 may be reduced, and even if a coupling phenomenon occurs in the shield unit 280 , the current retention rate of the driving thin film transistor 220 may be improved. Accordingly, the amount of current of the driving current flowing through the organic light emitting device 260 may be maintained constant, and the luminance of the organic light emitting device 260 may be maintained constant. In addition, since the shield part 280 extends from the active layer 221 of the driving thin film transistor 220 , an additional process for separately forming the shield part 280 is not required. Accordingly, the organic light emitting diode display 200 having reduced coupling between the data line 251 and the gate electrode 222 of the driving thin film transistor 220 can be easily manufactured.

2E is a graph for explaining an effect of an organic light emitting diode display according to an exemplary embodiment. In FIG. 2E , d denotes a protrusion distance d of the shield part shown in FIG. 2D . Figure 2e shows three examples and two comparative examples. A change in the amount of current in the emission section of the driving current flowing through the organic light emitting diode of the organic light emitting diode display according to an exemplary embodiment of the present invention is shown. The amount of current is proportional to the luminance of the sub-pixel.

In the graph of FIG. 2E , the x-axis represents time based on the start time of the emission period, and the left y-axis represents the amount of current (A) of the driving current flowing into the anode of the organic light-emitting device. The y-axis on the right represents the current retention rate (CHR) of the driving current. The current retention ratio refers to a maintenance level of the amount of current flowing through the sub-pixel during one frame period. In FIG. 2E , one frame is 16.7 ms (60 Hz).

The first comparative example (d=6.5 μm (floating shield)) shows a change in the amount of current in the emission section of the driving current flowing through the organic light emitting diode of the organic light emitting diode display including the shield formed to be electrically floating. In this case, d means the protrusion distance (d). The organic light emitting diode display according to the first comparative example was manufactured in the same manner as the organic light emitting diode display according to the third embodiment, except that the shield portion was formed in an island shape to electrically float. That is, the shield part is not electrically connected to the VDD wiring.

A parasitic capacitance (Cp) generated between the data line and the first electrode measured in Comparative Example 1 was measured to be 0.53 fF. Crosstalk was measured to be 4.3%. The initial amount of current was measured to be 4.7058 μA. Current retention (CHR) was measured to be 35.3%.

Specifically, the amount of driving current is gradually decreased from 4.7058 μs to 1.656 μA after 16.7 μs.

For crosstalk measurement, a crosstalk pattern image having a white rectangular pattern in the center on a representative black background that can measure crosstalk is displayed on the display device. increase can be seen. This increase in the amount of current is defined as a crosstalk phenomenon, and the degree of increase in the amount of current is defined as the level of crosstalk.

Accordingly, in the first comparative example, since the amount of current is continuously decreased, the luminance of the sub-pixels is continuously decreased, and when displaying an image in which crosstalk may occur, crosstalk occurs, and thus the image quality is deteriorated. .

In particular, it is not preferable to apply the first comparative example because it is preferable that the current retention rate be 98% or more and the crosstalk be 2% or less.

A second comparative example (without shield) represents a change in the amount of current in the emission section of the driving current flowing through the organic light emitting diode of the organic light emitting diode display in which the shield portion is not formed. At this time, since the shield part does not exist, there is no protrusion distance. The organic light emitting display device according to the second comparative example was manufactured in the same manner as the organic light emitting display device according to the embodiment except that the shield part was not provided.

The parasitic capacitance (Cp) generated between the data line and the first electrode measured in Comparative Example 2 was measured to be 2.57 fF. Crosstalk was measured to be 3.9%. The initial amount of current was measured to be 4.7197 μA. Current retention (CHR) was measured to be 98.0%.

Specifically, the amount of driving current is gradually decreased from 4.7197 μs to 4.6253 μA after 16.7 μs.

For crosstalk measurement, a crosstalk pattern image having a white rectangular pattern in the center on a representative black background capable of measuring crosstalk was displayed on the display device.

Accordingly, in the second comparative example, since the amount of current is continuously decreased, the luminance of the sub-pixels is continuously decreased, and when displaying an image in which crosstalk may occur, crosstalk occurs, so image quality is deteriorated. .

In particular, it may be desirable for the current retention rate to be 98% or more and the crosstalk to be 2% or less.

In the first embodiment (d=0.5 μm), the driving current flowing through the organic light emitting device 260 of the organic light emitting display device 200 including the shield unit 280 according to the exemplary embodiment of the present invention is emitted in the light emitting section. Shows the change in the amount of current. In this case, d means the protrusion distance (d). In the organic light emitting diode display 200 according to the first embodiment, the protrusion distance d of the shield portion 280 is 0.5 μm. In addition, the shield unit 280 is electrically connected to the VDD wiring 252 .

The parasitic capacitance Cp generated between the data line 251 and the first electrode 232 measured in the first embodiment was measured to be 1.27 fF. Crosstalk was measured to be 1.9%. The initial amount of current was measured to be 4.8222 μA. Current retention (CHR) was measured to be 99.9%.

Specifically, the amount of driving current is maintained at 4.8222 μA and decreases to 4.8173 μA after 16.7 μs.

For crosstalk measurement, a crosstalk pattern image having a white rectangular pattern in the center on a representative black background capable of measuring crosstalk was displayed on the display device.

Therefore, in the first embodiment, since the amount of current is continuously maintained, the luminance of the sub-pixel is maintained, and when displaying an image in which crosstalk may occur, crosstalk occurs at 2% or less, so the image quality is comparable improved compared to the example.

In the second embodiment (d=3.5 μm), the driving current flowing through the organic light emitting device 260 of the organic light emitting display device 200 including the shield unit 280 according to the exemplary embodiment of the present invention is emitted during the emission period. Shows the change in the amount of current. In this case, d means the protrusion distance (d). In the organic light emitting diode display 200 according to the second exemplary embodiment, the protrusion distance d of the shield part 280 is 3.5 μm. In addition, the shield unit 280 is electrically connected to the VDD wiring 252 .

The parasitic capacitance Cp generated between the data line 251 and the first electrode 232 measured in the second embodiment was measured to be 0.88 fF. Crosstalk was measured to be 1.3%. The initial amount of current was measured to be 4.8536 μA. Current retention (CHR) was measured to be 99.9%.

Specifically, the amount of driving current is maintained at 4.8536 μA and decreases to 4.8487 μA after 16.7 μs.

For crosstalk measurement, a crosstalk pattern image having a white rectangular pattern in the center on a representative black background capable of measuring crosstalk was displayed on the display device.

Therefore, in the second embodiment, since the amount of current is continuously maintained, the luminance of the sub-pixel is maintained, and when displaying an image in which crosstalk may occur, crosstalk occurs at 2% or less, so that the image quality is comparable improved compared to the example. In particular, since the crosstalk and initial luminance are improved compared to the first embodiment, the second embodiment is more preferable than the first embodiment.

In the third embodiment (d=6.5 μm), the driving current flowing through the organic light emitting device 260 of the organic light emitting display device 200 including the shield unit 280 according to the exemplary embodiment of the present invention is emitted in the light emitting section. Shows the change in the amount of current. In this case, d means the protrusion distance (d). In the organic light emitting diode display 200 according to the third exemplary embodiment, the protrusion distance d of the shield portion 280 is 6.5 μm. In addition, the shield unit 280 is electrically connected to the VDD wiring 252 .

The parasitic capacitance Cp generated between the data line 251 and the first electrode 232 measured in the third embodiment was measured to be 0.58 fF. Crosstalk was measured to be 0.7%. The initial amount of current was measured to be 4.8822 μA. Current retention (CHR) was measured to be 99.9%.

Specifically, the amount of driving current is maintained at 4.8822 μA and decreases to 4.8773 μA after 16.7 μs.

For crosstalk measurement, a crosstalk pattern image having a white rectangular pattern in the center on a representative black background capable of measuring crosstalk was displayed on the display device.

Therefore, in the third embodiment, since the amount of current is continuously maintained, the luminance of the sub-pixel is maintained, and when displaying an image in which crosstalk may occur, crosstalk occurs at 2% or less, so that the image quality is comparable improved compared to the example. In particular, it can be seen that the third embodiment has improved crosstalk and initial luminance compared to the second embodiment.

The reason why the amount of current of the driving current is kept constant is because, as described above, the shield part is electrically connected to the input electrode or the output electrode of the driving thin film transistor and does not electrically float. Specifically, the shield part is substantially the same as the storage capacitor. Thus, the potential difference between the gate electrode of the driving thin film transistor and the output electrode of the driving thin film transistor is constantly maintained, and the current retention rate of the driving thin film transistor can be improved. Also, the level of crosstalk improves as the protrusion distance increases. Accordingly, the luminance of the organic light emitting diode may be kept constant, and the image quality of the high resolution organic light emitting diode display may be improved.

3 is a schematic plan view illustrating an organic light emitting diode display according to another exemplary embodiment. In the organic light emitting diode display 300 according to another embodiment of the present invention, an additional shield unit 380 is provided as an input electrode 223 of the driving thin film transistor 320 compared to organic light emitting display devices according to embodiments of the present invention. ), extending from the active layer 221 to the data line 251 direction. In addition, the structural features disclosed in the organic light emitting diode display 300 may be combined with the features disclosed in the organic light emitting display devices according to embodiments of the present invention. For convenience of description, a description overlapping with the organic light emitting diode display 200 described above will be omitted.

The shield unit 380 according to another embodiment of the present invention is configured to further include a region extending from the active layer 221 corresponding to the input electrode 223 in the direction of the data line 251 . For example, the shield unit 380 extends from the active layer 221 corresponding to the input electrode 223 to reduce a coupling effect between the data line 251 and the gate electrode 222 and the output electrode. A region extending from the active layer 221 corresponding to 224 and configured to reduce a coupling effect between the data line 251 and the first electrode 232 is included. That is, the shield unit 380 has a plurality of shielding regions corresponding to the data lines 251 (refer to FIG. 3 ).

That is, a portion of the patterned semiconductor layer (ie, the shield portion 380 and the active layer 221 ) extends from the input electrode 223 in the direction of the data line 251 , and each shielding region of the shield portion 380 . They are configured to surround at least two surfaces of the gate electrode 222 . However, in this case, the shielding regions of each shielding unit 380 should be connected only through the active layer 221 of the driving thin film transistor 220 , and are configured not to be connected to each other along the periphery of the driving thin film transistor 220 . If the respective shielding regions are connected to each other along the periphery of the driving thin film transistor 220 , the driving current supplied to the organic light emitting device 260 through the VDD wiring 252 is a bypass path connected along the periphery of the driving thin film transistor 220 . will flow along Accordingly, the driving thin film transistor 220 may not operate.

The shielding regions of each shield unit 380 are configured to overlap the data line 251 . In addition, the shielding areas of each of the shielding units 380 have a predetermined protrusion distance. In this case, the protruding distances of the shielding regions of the respective shielding units 380 may be the same or different from each other. Also, the shielding regions of each shield unit 380 may or may not overlap the data line 251 .

According to the above-described configuration, the shield unit 380 may reduce a coupling effect between the data line 251 and the gate electrode 222 , and at the same time, reduce the coupling effect between the data line 251 and the first electrode 222 . It has the advantage of reducing the effect.

4A to 4B are schematic plan and cross-sectional views illustrating an organic light emitting diode display according to another exemplary embodiment. The organic light emitting diode display 400 according to another embodiment of the present invention has an overlapping area between the shield part 480 and the first electrode 232 compared to the organic light emitting display apparatuses according to the embodiments of the present invention. It is characterized in that the first shield capacitance (Cs1) is minimized. Also, the structural features disclosed in the organic light emitting diode display 400 can be combined with the features disclosed in the organic light emitting display devices according to embodiments of the present invention. For example, the shield unit 480 may be combined with the shield unit 380 corresponding to the input electrode 223 of the organic light emitting diode display 300 as described above, and may It may be combined with the shield unit 580 corresponding to the VDD wiring 252 .

For convenience of description, descriptions overlapping those of the organic light emitting display devices 200 and 300 described above will be omitted.

The shield unit 480 according to another embodiment of the present invention extends from the active layer 221 corresponding to the output electrode 224 in the direction of the data line 251 to minimize the overlapping area with the first electrode 232 . It is configured to be (see FIGS. 4 and 4B).

For example, the shield portion 480 may extend along the data line 251 while minimizing the overlapping area with the first electrode 232 . Specifically, it is preferable that the distance between the shield unit 480 and the first electrode 232 overlap in one direction is at least 3 μm or less.

For example, the shield part 480 may extend along the data line 251 while overlapping the data line 251 without overlapping the first electrode 232 . Specifically, the shield portion 480 and the first electrode 232 do not overlap in one direction, it is possible to be spaced apart.

According to the above-described configuration, the shield unit 480 can reduce the coupling effect between the data line 251 and the first electrode 232 , and at the same time reduce the first shield capacitance Cs1 by the shield unit 480 . increase can be minimized. In particular, when the storage capacitor Cst and the first shield capacitance Cs1 have sufficient capacities in the low-resolution organic light emitting diode display, the charging time of the data voltage may increase. However, the shield unit 480 can compensate for the problem that the charging time of the data voltage is long.

In addition, in the case of a high-speed driving organic light emitting diode display, for example, in the case of an organic light emitting display driven at 240 Hz or 480 Hz, since the light emission period is relatively short, the data voltage needs to be rapidly charged to the storage capacitor Cst. . Since the shield unit 480 has a significantly smaller or negligible level of the first shield capacitance Cs1 than the storage capacitance Cst during high-speed operation, the charging speed of the storage capacitor Cst may not be delayed, and at the same time, the data wiring ( There is an advantage in that the coupling effect between the 251 and the first electrode 232 can be reduced.

5 is a schematic plan view illustrating an organic light emitting diode display according to another exemplary embodiment. In the organic light emitting diode display 500 according to another embodiment of the present invention, the additional shield part 580 is further extended in the VDD wiring 252 direction, compared to the organic light emitting diode display according to the embodiments of the present invention. characterized in that In addition, the structural features disclosed in the organic light emitting diode display 500 can be combined with the features disclosed in the organic light emitting display devices according to embodiments of the present invention. For convenience of description, descriptions overlapping those of the organic light emitting display devices 200 , 300 , and 400 described above will be omitted.

The shield unit 580 according to another embodiment of the present invention is configured to further include a region extending in the direction of the VDD wiring 252 . That is, the shield unit 580 reduces the coupling effect between the VDD line 252 and the first electrode 232 and the region configured to reduce the coupling effect between the data line 251 and the first electrode 232 . It includes an area configured to That is, the shield unit 580 has a plurality of shielding regions corresponding to the data line 251 and the VDD line 252 (refer to FIG. 5 ).

The shielding area of the shield unit 580 corresponding to the data line 251 and the shielding area of the shield unit 580 corresponding to the VDD line 252 are extended from the active layer 221 corresponding to the input electrode 223 . It may include a region configured to reduce a coupling effect between the data line 251 and the gate electrode 222 and a region configured to reduce a coupling effect between the VDD line 252 and the gate electrode 222 .

Alternatively, the shielding area of the shield unit 580 corresponding to the data line 251 and the shielding area of the shield unit 580 corresponding to the VDD line 252 extend from the active layer 221 corresponding to the output electrode 224 . and a region configured to reduce a coupling effect between the data line 251 and the first electrode 232 and a region configured to reduce a coupling effect between the VDD line 252 and the first electrode 232 . have.

Alternatively, the shielding area of the shield unit 580 corresponding to the data line 251 and the shielding area of the shield unit 580 corresponding to the VDD line 252 extend from the active layer 221 to form the data line 251 and the gate. A region configured to reduce the coupling effect between the electrode 222 and the data line 251 and the first electrode 232 and the coupling effect between the VDD line 252 and the gate electrode 222 and the first electrode 232 It may include a region configured to reduce

That is, the shield unit 580 is configured to have at least a plurality of shielding regions respectively corresponding to the data line 251 and the VDD line 252 .

In addition, each of the shielding areas of the shielding unit 580 has a predetermined protrusion distance. In this case, the protruding distances of the shielding regions of the respective shielding units 580 may be the same or different from each other. Also, the shielding regions of each shield unit 580 may or may not overlap the data line 251 and/or the VDD line 252 .

According to the above-described configuration, the shield unit 580 can reduce the coupling effect of the gate electrode 222 by the data line 251 and the VDD line 252 , and at the same time, the data line 251 and the VDD line 252 . ), there is an advantage in that the coupling effect of the first electrode 222 can be reduced. And, according to the above-described configuration, as the overlapping area between the shield unit 580 and the first electrode 232 increases, the first shield capacitance Cs1 may be increased, particularly in a high-resolution organic light emitting display device. When the area in which the storage capacitor Cst can be formed is insufficient, the data line 251 and the VDD line are increased by increasing the first shield capacitance Cs1 to compensate for the insufficient capacity of the storage capacitor Cst of the high resolution organic light emitting diode display. (253) has the advantage of reducing the coupling phenomenon.

6A to 6B are schematic plan and cross-sectional views illustrating an organic light emitting diode display according to another exemplary embodiment. The organic light emitting diode display 600 according to another embodiment of the present invention is characterized in that the second electrode 631 is configured to perform the function of the auxiliary shield, compared to the organic light emitting diode display according to the embodiments of the present invention. do it with In addition, the structural features disclosed in the organic light emitting display device 600 may be combined with the features disclosed in the organic light emitting display devices according to embodiments of the present invention. For convenience of description, descriptions overlapping those of the organic light emitting display devices 200 , 300 , 400 , and 500 described above will be omitted.

The second electrode 631 covers one boundary of the first electrode 232 . In detail, one boundary of the second electrode 631 is located between one boundary of the first electrode 232 and one boundary of the data line 251 , and one boundary of the second electrode 631 is located between one boundary of the first electrode 232 . ) protrudes from one boundary (see FIGS. 6A and 6B). In this case, since the second electrode 631 together with the shield unit 280 blocks an electric field generated between the first electrode 232 and the data line 251 , the first electrode 232 and the data line 251 . The parasitic capacitance Cp formed therebetween may be reduced.

In detail, in general, as the separation distance between the second electrode 631 and the data line 251 increases, a coupling phenomenon between the second electrode 631 and the data line 251 increases. However, the second electrode 631 of the organic light emitting diode display 600 is intentionally disposed to be close to the data line 251 . According to the above configuration, the coupling phenomenon between the second electrode 631 and the data line 251 increases, but at the same time, the coupling phenomenon between the first electrode 232 and the data line 251 decreases. In this case, since the second electrode 631 is configured to be connected to the VDD wiring 252 through the driving thin film transistor 220 , it has a structure less affected by a coupling phenomenon than the first electrode 232 in a floating state. Accordingly, even when the data line 251 and the second electrode 631 are close to each other, the second electrode 631 can stably perform the function of the auxiliary shield unit.

In addition, the second electrode 631 may further extend in the direction of the VDD line located in the opposite direction of the data line 251 with respect to the second electrode 631 (refer to FIG. 6A ). In this case, the second electrode 631 covers another boundary that is opposite to one boundary of the first electrode 232 . Specifically, another boundary of the second electrode 631 is located between another boundary of the first electrode 232 and one boundary of the VDD wiring, and another boundary of the second electrode 631 is the first electrode 232 . ) protrude beyond another boundary of In this case, since the second electrode 631 partially blocks the electric field generated between the first electrode 232 and the VDD wiring 252 , the parasitic capacitance formed between the first electrode 232 and the VDD wiring 252 is can be reduced. That is, as the parasitic capacitance Cp is reduced by the second electrode 231 , a coupling phenomenon between the gate electrode 222 of the driving thin film transistor 220 and the data line 251 may be reduced.

In addition, the second electrode 631 may be further configured such that an area overlapping the first electrode 232 is maximized. In particular, according to the above-described shape of the second electrode 631 , it is possible to increase the capacity of the storage capacitor Cst while reducing the parasitic capacitance Cp. For example, when one boundary of the second electrode 631 protrudes more than one boundary of the first electrode 232 and is adjacent to the data line 251 , the first electrode 232 and the second electrode 631 are separated. The capacity of the storage capacitor Cst may increase as the overlapped area increases. For example, when another boundary of the second electrode 631 protrudes more than another boundary of the first electrode 232 and is adjacent to the VDD wiring 252 , the first electrode 232 and the second electrode 631 are adjacent to each other. ) may increase to increase the capacity of the storage capacitor Cst. For example, when the second electrode 631 is configured to surround the output electrode of the switching thin film transistor 240 , the overlapping area of the first electrode 232 and the second electrode 631 increases and the storage capacitor ( Cst) may be increased.

According to the above-described configuration, the capacity of the storage capacitor Cst can be increased, and in particular, when the area in which the storage capacitor Cst can be formed is insufficient in the high-resolution organic light emitting display device, the storage capacitor Cst capacity is secured. There is an advantage in that a coupling phenomenon between the first electrode 231 and the data line 251 and/or the VDD line 252 can be reduced.

7A to 7B are schematic plan and cross-sectional views illustrating an organic light emitting diode display according to still another exemplary embodiment. In the organic light emitting diode display 700 according to another embodiment of the present invention, compared to the organic light emitting display devices according to the embodiments of the present invention, the shield part 780 separated by the active layer of the driving thin film transistor 220 . (221) It is characterized in that it is arranged in the lower part. In addition, the structural features disclosed in the organic light emitting display device 700 can be combined with the features disclosed in the organic light emitting display devices according to embodiments of the present invention. For convenience of description, descriptions overlapping those of the organic light emitting display devices 200 , 300 , 400 , 500 and 600 described above will be omitted.

The shield unit 780 does not extend from the active layer of the driving thin film transistor and may be separated from the active layer of the driving thin film transistor. For example, the shield unit 780 is disposed under the buffer layer 271 . The shield part 780 overlaps the first electrode 232 of the storage capacitor 230 .

The shield part 780 may be made of metal. For example, the shield unit 780 may include silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum/aluminum neodium (Mo/AlNd). can be made with

The shield unit 780 is electrically connected to the input electrode 723 of the driving thin film transistor 720 . For example, a shield part contact hole 781c is formed in the interlayer insulating layer 273 , the gate insulating layer 272 , and the buffer layer 271 , and the input electrode 723 of the driving thin film transistor 720 contacts the shield part. It is connected to the shield unit 780 through the hole 781c. However, the present invention is not limited thereto, and the shield unit 780 may be connected to the output electrode 224 of the driving thin film transistor 720 . Accordingly, the shield unit 780 does not electrically float, reduces parasitic capacitance generated between the data line 251 and the first electrode 232 , and a potential difference between the gate electrode 221 and the output electrode 224 . , that is, the stored image signal may be constantly maintained.

In particular, the shield unit 780 has a gate electrode in which the shield unit 780 is adjacent to the data line 251 when compared to the organic light emitting display devices 200 , 300 , 400 , 500 , and 600 according to other exemplary embodiments. Since the (222) region can be completely covered, the parasitic capacitance can be further reduced, and at the same time, the problem that the input electrode and the output electrode can be electrically connected to each other can be solved. That is, when the shield parts of the other embodiments are implemented in the same shape as the shield part 780 , the input electrode and the output electrode are directly connected through the periphery of the gate electrode without passing through the gate electrode due to the conductive semiconductor layer. Accordingly, there may be a problem that the driving thin film transistor does not operate. However, the shield unit 780 may solve the problem that the driving thin film transistor does not operate.

Since the organic light emitting diode display 700 includes the shield portion 780 overlapping the first electrode 232 , a parasitic capacitance generated between the first electrode 232 and the data line 251 may be reduced. In addition, since the shield part 780 is not electrically floating, a coupling phenomenon between the data line 251 and the gate electrode 222 may be reduced, and the current retention rate of the driving thin film transistor 720 may be improved. . Accordingly, the amount of current of the driving current flowing through the organic light emitting diode 260 may be kept constant, and the image quality of the organic light emitting diode display may be improved.

The embodiments of the present invention may be summarized as follows: An organic light emitting display device includes a driving thin film transistor including an active layer and a gate electrode, a storage capacitor including a first electrode and a second electrode, a gate electrode, and the A first pattern electrode including a first electrode, an anode disposed on the driving thin film transistor and the storage capacitor, an output electrode connected to the active layer, a second pattern electrode connected to an anode contact portion connecting the anode, and an active having semiconductor characteristics It is configured to include a patterned semiconductor layer including a layer and a shield having conductor characteristics, thereby reducing a coupling phenomenon and parasitic capacitance, thereby improving crosstalk and luminance.

A data line configured to overlap the shield portion that is a part of the panned semiconductor layer is disposed. A distance between one boundary of the first electrode and one boundary of the adjacent shield unit is configured to be greater than a distance between one boundary of the first electrode and one boundary of the adjacent data line. A part of the shield portion is configured to have semiconductor characteristics. The active layer overlapping the first pattern electrode is configured to have a semiconductor characteristic, and a portion of the shield portion exposed by extending more than the first pattern electrode is configured to have a conductor characteristic. The anode contact portion of the second pattern electrode is configured to be connected to the shield portion and the output electrode. A first shield capacitance varying based on a data voltage (image signal) is generated between the patterned semiconductor layer and the first pattern electrode. One boundary of the second pattern electrode is configured to extend further than the first pattern electrode toward the data line. One boundary of the patterned semiconductor layer is configured to extend further than the second pattern electrode toward the data line. One boundary of the second pattern electrode extends more than the first pattern electrode toward the data line and is configured to extend less than one boundary of the patterned semiconductor layer.

The organic light emitting diode display includes a shield unit connected to a VDD line, a data line disposed adjacent to the shield unit, a driving thin film transistor disposed on the shield unit, an input electrode, a gate electrode, and an output electrode, and connected to the VDD line; and a storage capacitor disposed on the shield portion and including a first electrode connected to the gate electrode and a second electrode connected to the output electrode, and an anode disposed on the driving thin film transistor and the storage capacitor and connected to the second electrode. In addition, at least a portion of the shield portion disposed adjacent to the data line is a conductor.

A portion of the shield portion overlapping the data line is a conductor. The shield part is connected to the input electrode of the driving thin film transistor and is electrically connected to the VDD wiring. The shield part is connected to the output electrode of the driving thin film transistor and is electrically connected to the VDD wiring through the active layer. A predetermined region of the shield portion is a patterned semiconductor layer overlapping the first electrode, and is configured to generate a variable capacitance based on an image signal value stored in the first electrode.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

100: conventional organic light emitting display device
200, 300, 400, 500, 600, 700: organic light emitting diode display
210: substrate
220, 720: driving thin film transistor
221: active layer
222: gate electrode
223, 723: input electrode
224: output electrode
230: storage capacitor
231, 631: second electrode
232: first electrode
240: switching thin film transistor
251: data wiring
252: VDD wiring
253: gate wiring
254: connection wiring
260: organic light emitting device
261: anode
261c: anode contact part
262: organic light emitting layer
263: cathode
271: buffer layer
272: gate insulating layer
273: interlayer insulating layer
274: planarization layer
280, 780: shield unit
Cp: parasitic capacitor
Cs1: first shield capacitance
Cs2: second shield capacitance
Cst: storage capacitor
Id: drive current
DA1, DA2: display area
NA: peripheral area

Claims (20)

a driving thin film transistor including an active layer and a gate electrode;
a storage capacitor including a first electrode and a second electrode;
a first pattern electrode including the gate electrode and the first electrode;
an anode disposed on the driving thin film transistor and the storage capacitor;
a second pattern electrode connected to an output electrode connected to the active layer and an anode contact unit connecting the anode; and
A patterned semiconductor layer comprising the active layer having semiconductor characteristics and a shielding unit having conductor characteristics,
and a data line configured to overlap the shield portion that is a part of the patterned semiconductor layer. delete According to claim 1,
and a distance between one boundary of the first electrode and one boundary of the shield portion adjacent to the first electrode is greater than a distance between the one boundary of the first electrode and one boundary of the adjacent data line. According to claim 1,
A portion of the shield portion overlapping the first pattern electrode is configured to have a semiconductor characteristic. According to claim 1,
The active layer overlapping the first pattern electrode is configured to have a semiconductor characteristic, and a portion of the shield portion that is extended and exposed more than the first pattern electrode is configured to have a conductor characteristic. Device. According to claim 1,
An anode contact portion of the second pattern electrode is connected to the shield portion and the output electrode. According to claim 1,
and a first shield capacitance variable based on an image signal is further included between the patterned semiconductor layer and the first pattern electrode. According to claim 1,
and one boundary of the second pattern electrode extends further than the first pattern electrode toward the data line. According to claim 1,
and one boundary of the patterned semiconductor layer extends further than the second pattern electrode toward the data line. According to claim 1,
and one boundary of the second pattern electrode extends more than the first pattern electrode toward the data line and less than one boundary of the patterned semiconductor layer. According to claim 1,
Further comprising a VDD wiring,
and the shield part is electrically connected to the VDD line. 12. The method of claim 11,
and the shield portion extends to overlap the VDD wiring. According to claim 1,
The organic light emitting display device of claim 1, wherein the shield part is configured such that a first shield capacitance is not generated between the first electrode and the shield part, but only a second shield capacitance is generated between the data line and the shield part. 14. The method of claim 13,
The organic light emitting display device of claim 1, wherein the shield portion extends from the active layer along a data line so that an area where the shield portion overlaps the first electrode is minimized. According to claim 1,
The organic light emitting diode display device further comprising: a VDD line; and an input electrode connected to the VDD line and the active layer, wherein a portion of the patterned semiconductor layer extends from the input electrode in a direction of the data line. a shield part electrically connected to the VDD wiring;
a driving thin film transistor disposed on the shield unit, the driving thin film transistor including an input electrode, a gate electrode, and an output electrode, and connected to the VDD line;
a storage capacitor disposed on the shield portion and including a first electrode connected to the gate electrode and a second electrode connected to the output electrode;
an anode disposed on the driving thin film transistor and the storage capacitor and connected to the second electrode; and
and a data line disposed adjacent to the shield portion compared to the first electrode;
and at least a portion of the shield portion disposed adjacent to the data line is a conductor. 17. The method of claim 16,
a portion of the shield portion overlaps the data line;
and the portion of the shield overlapping the data line is a conductor. 17. The method of claim 16,
and the shield part is connected to the input electrode of the driving thin film transistor and electrically connected to the VDD line. 17. The method of claim 16,
and the shield part is connected to an output electrode of the driving thin film transistor and electrically connected to the VDD wiring through an active layer of the driving thin film transistor. 17. The method of claim 16,
The predetermined region of the shield portion is a patterned semiconductor layer overlapping the first electrode, and is configured to generate a variable capacitance based on an image signal value stored in the first electrode. .

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