KR102423549B1 - Method of manufacturing a silicone film, a semiconductor device and method of manufacturing the semiconductor device - Google Patents

Abstract

The silicone film manufacturing method prepares a liquid silicone binder containing silicone and a solvent, mixes the liquid silicone binder with a phosphor to form a liquid silicone resin, coats the liquid silicone resin on a release film, and prepares the coated liquid silicone resin. It can be dried to form a silicone film. As a result of analysis by FT-IR equipment for silicon, the integral value for the region in the 800-850 cm-1 section can be detected to be less than 0.05.

Description

TECHNICAL FIELD [0001] Method of manufacturing a silicone film, a semiconductor device and method of manufacturing the semiconductor device

The embodiment relates to a method for manufacturing a silicon film, a method for manufacturing a semiconductor device, and a semiconductor device.

A semiconductor device containing a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors have developed red, green, and Various colors such as blue and ultraviolet light may be implemented. In the light emitting device, efficient white light can be realized by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

Such a semiconductor device includes a molding member for protecting the light emitting device or converting a wavelength of light emitted from the light emitting device.

Silicon is used as a conventional molding member. The conventional silicone molding member has many cross-linkers, which are bonds of hydrogen (H) and carbon (C), and has a problem in that heat resistance or light resistance is weak due to the excessive presence of such cross-linkers.

Examples provide a method for manufacturing a silicone film having improved light resistance and excellent heat resistance.

The embodiment provides a method of manufacturing a semiconductor device capable of improving light extraction efficiency and light efficiency.

The embodiment provides a semiconductor device manufactured using the silicon film manufactured as described above.

The method for manufacturing a silicone film according to an embodiment includes the steps of preparing a liquid silicone binder containing silicone and a solvent, mixing the liquid silicone binder with a phosphor to form a liquid silicone resin, and the liquid silicone on a release film It may include coating the resin and drying the coated liquid silicone resin to form a silicone film. As a result of analysis of the silicon by FT-IR equipment, an integral value of the region in the 800-850 cm-1 section may be detected as 0.05 or less.

A method of manufacturing a semiconductor device according to an embodiment includes the steps of: providing a substrate on which a plurality of light emitting devices are aligned in a chamber; aligning at least one silicon film manufactured by the method on the substrate; and performing heating, and pressing the silicon film using a pressing member positioned on the silicon film to form a molding member around the light emitting device.

The semiconductor device according to the embodiment may be manufactured by the above method.

According to the embodiment, as a result of analysis by FT-IR equipment, the number of crosslinkers is reduced by the improved silicon in which the integral value for the region in the 800-850 cm-1 section is 0.05 or less, so that heat resistance or light resistance characteristics are improved. Not only is it excellent, but it also has excellent sticky properties and crack properties.

According to the embodiment, by forming the molding member on the light emitting device using the silicon film made of the improved silicon as described above, the thickness of the molding member on the side of the light emitting device becomes the same as the thickness of the molding member on the light emitting device, Since the light emitted from the light emitting device can pass through the molding member in the same path, light efficiency can be improved.

According to the embodiment, by forming the molding member on the light emitting device using the improved silicon film made of silicon as described above, since the square corners of the light emitting device have an angled shape, light efficiency can be improved.

1A shows typical silicon properties detected by Fourier Transformation-Infrared (FT-IR) equipment.
Figure 1b shows the improved silicon properties detected by FT-IR instrumentation.
2 is a flowchart illustrating a film manufacturing method according to an embodiment.
3 is a process diagram specifically explaining the film manufacturing method.
4 is a flowchart illustrating a method of manufacturing a semiconductor device according to an embodiment.
5 is a process diagram specifically illustrating a method of manufacturing a semiconductor device.

Hereinafter, embodiments for solving the above problems will be described with reference to the accompanying drawings.

In the description of the embodiment, in the case where each element is described as being formed on "on or under", on or under under) includes both elements in which two elements are in direct contact with each other or in which one or more other elements are disposed between the two elements indirectly. In addition, when expressed as "up (up) or down (on or under)", the meaning of the downward direction as well as the upward direction based on one configuration may be included.

General silicone has a large number of crosslinkers, so it is weak in heat resistance or light resistance.

On the other hand, in the embodiment, by reducing the number of crosslinkers, silicone having excellent heat resistance or light resistance characteristics can be obtained. Such silicone (hereinafter, referred to as improved silicone) may exist in a liquid form in which the silicone binder is dipped in a solvent. In addition, the improved silicone has excellent sticky properties and crack properties.

However, a process technique for making this improved silicon, specifically, a silicon binder in a liquid form as a molding member of a semiconductor device, has not yet been developed, so it has not been applied to products.

Figure 1a shows the general silicon properties detected by the FT-IR (Fourier Transformation-Infrared) equipment, Figure 1b shows the improved silicon properties detected by the FT-IR equipment.

FT-IR equipment is one of the basic spectroscopic equipment and is equipment for determining the presence or absence of most chemical functional groups. , and the characteristics of the sample can be identified through these specific peaks.

A specific peak is a peak that appears only in a specific functional group, and the location of the peak can be confirmed in a handbook.

As shown in Figures 1a and 1b, the peak of the phenyl group appears at 1450 cm-1 for both general silicon and the improved silicon, and Si-O-Si at 1260 cm-1 and 1100-1000 cm-1 peak appears.

On the other hand, it is possible to compare the size relationship of the crosslinker using FR-IR equipment.

For example, as shown in FIGS. 1A and 1B , 800-850 cm-1 (hatched portion) may be associated with the crosslinker.

That is, the magnitude relationship of the crosslinker can be grasped by the result of integrating the region in the 800-850 cm-1 section.

The integral value for the area in the 800-850 cm-1 section shown in FIG. 1A is 0.05 or more, whereas the integral value for the area in the 800-850 cm-1 section shown in FIG. 1B is 0.05 or less. can be calculated.

Therefore, the magnitude relationship of the crosslinker can be grasped according to whether the integral value for the region in the 800-850 cm-1 section is 0.05 or more or less. Accordingly, it can be seen that the number of crosslinkers of the improved silicon (see FIG. 1b ) is reduced compared to general silicon (see FIG. 1a ).

The improved silicone has excellent heat resistance and light resistance characteristics as well as excellent sticky characteristics and crack characteristics by reducing the number of crosslinkers.

The improved silicone hardness, that is, Shore D, may be 30 to 70.

In the embodiment, a film may be manufactured based on such improved silicon, and a semiconductor device may be manufactured using the manufactured film.

(Film manufacturing method)

2 is a flowchart illustrating a film manufacturing method according to an embodiment, and FIG. 3 is a process diagram specifically explaining the film manufacturing method.

Referring to FIG. 2 , a liquid silicon binder may be provided (S11).

As shown in FIG. 1B, the liquid silicone binder may be immersed in a solvent with improved silicone having a reduced number of crosslinkers.

A liquid silicone binder may be mixed with the phosphor (S13).

The liquid silicone binder may be the improved silicone shown in FIG. 1B.

As shown in FIG. 3A , the liquid silicone binder 101 may be included in the container 100 . Specifically, the liquid silicone binder 101 may be immersed in the solvent in the container 100 .

As described above, the phosphor 103 may be mixed with the liquid silicone binder 101 included in the container 100 . The phosphor 103 may be formed in a powder form. Accordingly, the liquid silicon binder 101 and the phosphor 103 may be mixed by the solvent in the container 100 .

The liquid silicone resin 113 can be made by the liquid silicone binder 101 and the phosphor 103 mixed in this way. That is, the silicone resin 113 may include a liquid silicone binder 101 , a phosphor 103 , and a solvent.

S13 is optional and may be omitted if necessary. When there is no need to include the phosphor 103 in a film to be manufactured later, S13 may be omitted. In this case, the liquid silicone resin 113 may include the liquid silicone binder 101 and the solvent.

The release film 107 may be fixed on the plate 105 (S15). The release film 107 may be naturally fixed on the plate 105 without a separate fixing member between the release film 107 and the plate 105 . Alternatively, the release film 107 may be fixed on the plate 105 using an adhesive material or fixed on the plate 105 by a separately provided fixing member, but is not limited thereto.

As shown in FIG. 3B , when the release film 107 is provided, the release film 107 may be fixed on the plate 105 .

The release film 107 may be a member that is easily peeled off from the silicone film ( 121 in FIG. 3F ) to be manufactured later on the release film 107 . For example, the release film 107 may be made of PET resin, but is not limited thereto.

The plate 105 may be a support member for supporting the release film 107 and the silicone film (121 in FIG. 3F) to be formed thereon. For example, the plate 105 may be made of a glass material, but is not limited thereto.

As shown in FIG. 3C , the release film 107 is rubbed using a scrubber 109 to remove air bubbles between the release film 107 and the plate 105 . The scrubber 109 may be made of a soft paper material.

When there are no bubbles between the release film 107 and the plate 105 , the scrubbing process using the scrubber 109 may be omitted.

The scrubber 109 may be rubbed along one direction.

One or more scrubbers 109 may be provided to rub the entire area of the release film 107 in one direction unit.

A silicone resin 113 may be coated on the release film 107 (S17).

The silicone resin 113 made in S11 or S13 may be coated on the release film 107 fixed on the plate 105 in S15.

As shown in FIG. 3D, a portion of the silicone resin 113 contained in the container 100 is dropped onto the release film 107 with the top of the open container 100 facing down. . At this time, the amount of the silicone resin 113 falling on the release film 107 may be preset in consideration of the size of the silicone film (121 in FIG. 3F ) manufactured later.

As shown in FIG. 3E , as the scroller 115 moves in one direction, the silicone resin 113 dropped on the release film 107 spreads along the moving direction of the scroller 115 .

The scroller 115 may be repeatedly moved a plurality of times. For example, the silicone resin 113 may be spread by moving the release film 107 from the first side toward the second side once. The silicone resin 113 may be spread by moving it once again from the second side toward the first side. By moving the scroller 115 for a plurality of times in this way, the silicone resin 113 may have a desired thickness.

On the other hand, when the scroller 115 is moved from the first side to the second side, the scroller 115 is moved in close contact with the silicone resin 113 , thereby contributing to the spreading of the silicone resin 113 . On the other hand, when the scroller 115 is moved from the second side to the first side of the scroller 115, the scroller is moved apart from the silicone resin 113, so that the silicone resin 113 may not contribute to spreading. . By moving the scroller 115 for a plurality of times in this way, the silicone resin 113 may have a desired thickness.

The silicone resin 113 coated on the release film 107 may be dried (S19).

The silicone resin 113 may be heat-dried or UV-dried.

The thermal drying temperature may range from approximately 50°C to approximately 100°C. In this case, below the lower limit, the solvent may remain or the drying process time becomes longer, and above the upper limit, curing rather than drying may occur.

The wavelength of UV light during UV drying may be in the range of approximately 300 nm to 400 nm. In this case, below the lower limit, the solvent may remain or the drying process time becomes longer, and above the upper limit, curing rather than drying may occur.

Through such drying, the solvent contained in the silicone resin 113 may be removed. By removing the solvent, the silicone resin 113 may become a silicone film (121 in FIG. 3F).

The release film 107 may be removed from the silicone film 121 (S21). That is, the release film 107 may be peeled from the silicone film 121 .

As shown in FIG. 3f , an antistatic member 119 is disposed between the release film 107 and the silicone film 121 to remove static electricity remaining in the silicone film 121 before the silicone film 121 is peeled off. can be inserted.

As shown in FIG. 3G , by removing the release film 107 from the silicone film 123 , the silicone film 123 may be manufactured. All of the solvent is volatilized and does not remain in the silicon film 123 .

The silicon film 123 manufactured in this way may have improved characteristics, as shown in FIG. 1B .

The thickness of the silicon film 123 manufactured as described above may be 150 μm to 300 μm. When the thickness of the silicone film 123 is 150 μm or less, it is easy to manufacture the corresponding silicone film 123, but when a thick molding member is used later, the process becomes difficult because a large number of the silicone films 123 are required to be laminated. If the thickness of the silicone film 123 is 300 μm or more, the solvent may not be completely volatilized in the drying process of S19 because the thickness is thick, or the drying process time may be excessively long to volatilize all of the solvent.

(Semiconductor device manufacturing method)

4 is a flowchart illustrating a method of manufacturing a semiconductor device according to an embodiment, and FIG. 5 is a process diagram specifically illustrating a method of manufacturing a semiconductor device.

Referring to FIG. 4 , a substrate 133 may be provided ( S31 ). That is, as shown in FIG. 5A , the substrate 133 may be fixed on a jig 131 in the chamber 130 . In other words, the substrate 133 may be fixed on the jig 131 using at least one or more fixing members 135 disposed on the jig 131 .

A circuit pattern may or may not be formed on the substrate 133 .

When the circuit pattern is formed on the substrate 133 , the light emitting device 137 disposed on the substrate 133 later may be electrically connected to the circuit pattern.

When the circuit pattern is not formed on the substrate 133 , the light emitting device 137 disposed on the substrate 133 may be electrically connected to a separate electrode circuit pattern.

The substrate 133 may include at least one of a sapphire substrate, a printed circuit board, a ceramic substrate, and a semiconductor substrate. The semiconductor substrate may include at least one of SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga2O3.

A plurality of light emitting devices 137 may be aligned on the substrate 133 (S33).

The plurality of light emitting devices 137 on the substrate 133 may be arranged to be spaced apart from each other at the same distance, but is not limited thereto.

At least one alignment first mark may be formed on the substrate 133 to align the light emitting device 137 . Based on the first mark, the plurality of light emitting devices 137 may be aligned on the substrate 133 .

A spacer 139 may be attached to the substrate 133 ( S35 ). Specifically, the spacer 139 may be attached to the substrate 133 using an adhesive material, but is not limited thereto.

The spacer 139 may maintain a constant thickness of the molding member to be formed later, and may determine the thickness of the molding member.

As shown in FIG. 5B , the spacer 139 may be disposed along the outer periphery of the plurality of light emitting devices 137 , but the present invention is not limited thereto. That is, the spacer 139 may be disposed on the left periphery, the right perimeter, the lower perimeter, and the upper periphery of the plurality of light emitting devices 137 . The spacers 139 disposed outside each may be connected to each other and may be spaced apart from each other.

The spacer 139 may be made of glass, metal, or a polymer material having excellent heat resistance and strength, and may also be made of a release coating material such as Teflon for each material, but is not limited thereto. does not

The thickness of the spacer 139 may be at least greater than the thickness of the light emitting device 137 . In this case, the difference between the thickness of the spacer 139 and the thickness of the light emitting device 137 may be the thickness of the molding member to be formed later.

For example, when the thickness of the light emitting device 137 is 300 μm and the thickness of the spacer 139 is 350 μm, the thickness of the molding member is determined by the spacer 139 . The thickness may be 50 μm.

At least one silicon film 123 may be provided (S37). The number of the silicon films 123 to be provided may be set in consideration of the thickness of one silicon film 123 and the thickness of a molding member to be formed later.

The number of silicon films 123 may be set to have a thickness greater than the thickness of the molding member.

For example, when the thickness of each silicone film 123 is 100 μm and the thickness of the molding member is 400 μm, at least five silicon films 123 may be provided to have a thickness greater than the sum of the thickness of the molding member, which is 400 μm. Since the thickness of the five silicon films 123 is 500 μm, a molding member having a thickness of 400 μm can be formed by performing a series of processes to be described later using the five silicone films 123 having a thickness of 500 μm.

The thickness of each silicon film 123 prepared in S37 may be the same as or different from each other.

At least one or more silicon films 123 prepared in S37 may be aligned on the plurality of light emitting devices 137 (S39).

For such alignment, one or more second alignment marks may be formed on the substrate 133 . At least one silicon film 123 may be aligned on the plurality of light emitting devices 137 based on the second mark.

As shown in FIG. 5C , the size of at least one silicon film 123 may be larger than the overall size of the plurality of light emitting devices 137 . In other words, the size of the at least one silicon film 123 may be larger than the size formed by the light emitting device 137 disposed at the outermost among the plurality of light emitting devices 137 and smaller than the size formed by the spacer 139 . have.

The flat member 141 may be disposed on at least one or more silicon films 123 ( S41 ).

The flat member 141 is a molding member (151 in FIG. 5F) such that the upper surface of the molding member (151 in FIG. 5F) is flattened when at least one silicon film 123 is formed as the molding member (151 in FIG. 5F). can be made to have a uniform thickness.

The flat member 141 may have a flat surface on an upper surface and/or a lower surface thereof. The flat member 141 may be formed of a glass material, but is not limited thereto.

The flat member 141 may be in contact with an upper surface of the uppermost silicon film 123 among at least one or more silicon films 123 .

The size of the flat member 141 may be larger than the size formed by the spacer 139 .

In this case, the lower surface of the flat member 141 and the upper surface of the spacer 139 may be spaced apart from each other due to the thickness of at least one silicon film 123 . When the entire thickness of the at least one or more silicon films 123 is reduced by a process to be described later to form a molding member ( 151 in FIG. 5F ), the lower surface of the flat member 141 may be in contact with the upper surface of the spacer 139 . . Accordingly, when the lower surface of the flat member 141 contacts the upper surface of the spacer 139 , the thickness of the molding member ( 151 of FIG. 5F ) may be determined.

Referring to FIG. 5D , the structure of the chamber 130 will be described.

The chamber 130 may be divided into a first spatial region 125 and a second spatial region 127 based on the pressing member 143 disposed in the middle. The pressing member 143 may be disposed to be spaced apart from the upper surface of the flat member 141 .

At least two or more regions of the pressing member 143 may be fixed to the chamber 130 . The position of the pressing member 143 may be changed by pressure. For example, when atmospheric pressure is formed in the second spatial region and an atmospheric pressure lower than atmospheric pressure is formed in the first spatial region 125 , the pressing member 143 may move downward.

The pressing member 143 may be made of a rubber material having elasticity, but is not limited thereto.

The atmospheric pressure in the first spatial region 125 may be adjusted by the first vacuum pump 147 , and the atmospheric pressure in the second spatial region may be adjusted by the second vacuum pump 149 .

For example, when the air in the first spatial region is exhausted to the outside by the first vacuum pump 147 , the atmospheric pressure in the first spatial region may be lower than the external atmospheric pressure. For example, when external air is introduced into the first spatial region by the first vacuum pump 147 , the atmospheric pressure in the first spatial region may be higher than that of the outside.

In the second spatial region, the atmospheric pressure may be adjusted in the same manner as in the first spatial region.

A lift pin 146 for controlling the vertical movement of the jig 131 may be disposed in the chamber 130 . That is, the lift pin 146 is disposed under the hot plate 145 to pass through the hot plate 145 to lift the jig 131 upward or to load the lifted jig 131 onto the hot plate 145 . can do.

The lift pin 146 may be composed of four pins, but is not limited thereto.

The hot plate 145 may support the jig 131 while applying heat to the jig 131 .

A low-vacuum process may be performed (S43). Here, the low vacuum may mean a state in which the atmospheric pressure of each of the first and second spatial regions is lower than the external atmospheric pressure.

As shown in FIG. 5D , the air of each of the first spatial region and the second spatial region may be exhausted to the outside so that both the first spatial region and the second spatial region have a low vacuum pressure.

That is, the air in the first spatial region may be exhausted to the outside by the first vacuum pump 147 , so that the atmospheric pressure in the first spatial region may be lower than the external atmospheric pressure. In addition, the air in the second spatial region may be exhausted to the outside by the second vacuum pump 149 , so that the atmospheric pressure in the second spatial region may be lower than the external atmospheric pressure.

When evacuating a low vacuum, the number of pump rotations of the first and second vacuum pumps 147 and 149 may be adjusted so that the atmospheric pressure in the first spatial region and the atmospheric pressure in the second spatial region are equal to or similar to each other. The number of pump rotations of the first and second vacuum pumps 149 may vary according to the space size of each of the first and second space regions.

When the atmospheric pressure in the first spatial region and the atmospheric pressure in the second spatial region are not the same, the pressing member 143 may move to the flat member 141 or to the upper surface of the chamber 130 . It may be preferable that the pressing member 143 does not move during low-vacuum exhaust.

The low-vacuum exhaust may be continued until the atmospheric pressure of each of the first and second spatial regions becomes a desired atmospheric pressure (hereinafter, referred to as a target atmospheric pressure). The target atmospheric pressure may be, for example, 130 Pa or less. When the target atmospheric pressure is 130 Pa or less, the substrate 133 or the light emitting device 137 disposed on the jig 131 may be detached or misaligned.

Heating may be performed (S45).

As shown in FIG. 5E , the hotplate 145 may be heated. Before the hot plate 145 is heated or heated, the jig 131 lifted by the lift pins 146 may be loaded onto the hot plate 145 .

When the hot plate 145 is heated, the heat of the hot plate 145 may be applied to at least one silicon film 123 disposed on the plurality of light emitting devices 137 through the jig 131 .

The temperature of the silicone film 123 may be 80° C. to 150° C., but is not limited thereto. When the temperature of the silicon film 123 is 80° C. or less, it is difficult to smoothly perform lamination between at least one silicon film 123 . When the temperature of the silicone film 123 is 150° C. or higher, the modulus of the silicone film is rapidly lowered and curing proceeds quickly, so that the electrical and optical properties of the light emitting device 137 and/or the optical properties of the silicone film 123 This can be changed.

The heating process (S45) may be performed simultaneously with the low vacuum process (S43) or may be performed before the low vacuum process (S43).

Even while the heating process S45 is performed, the first and second vacuum pumps 147 and 149 may be continuously operated so that the first spatial region and the second spatial region have the same or similar atmospheric pressure.

Pressure pressurization may be performed (S47).

As shown in FIG. 5F , the second spatial region may be changed to an atmospheric pressure higher than the target atmospheric pressure, and the first spatial region may be changed to be equal to or lower than the target atmospheric pressure. The target atmospheric pressure may be the atmospheric pressure of the low vacuum performed in S43.

That is, external air may be introduced into the second spatial region by the operation of the second vacuum pump 149 , and the air pressure in the second spatial region may be changed from the target atmospheric pressure to the atmospheric pressure.

By the operation of the first vacuum pump 147 , the air in the first spatial region is exhausted to the outside, so that the atmospheric pressure in the first spatial region may be maintained at the target atmospheric pressure or may be changed to an atmospheric pressure lower than the target atmospheric pressure.

As such, when the atmospheric pressure in the first spatial region is lowered and the atmospheric pressure in the second spatial region is increased, a force for pushing the pressing member 143 is generated in the first spatial region and pulling the pressing member 143 in the second spatial region. giving force can be generated.

Accordingly, the pressing member 143 can be quickly and strongly moved in the downward direction to push the flat member 141 with a strong pressure.

The pressing pressure may be 50 kPa to 150 kPa, and the pressing time may be 30 seconds to 180 seconds. When the pressing pressure is 50 kPa or less, the flat member 141 may not be properly pressed, so that lamination between the silicon films 123 may not be performed. When the pressing pressure is 150 kPa or more, the flat member 141 may be damaged. If the pressing time is less than 30 seconds, the flat member 141 may not be properly pressed, so that lamination between the silicon films 123 may not occur. If the pressing time is 180 seconds or more, the flat member 141 may be damaged.

The flat member 141 is pushed by the pressing member 143 , the at least one silicone film 123 is pressed by the flat member 141 , and the silicon film 123 is heated by the heat applied to the at least one silicone film 123 . ), the molding member 151 surrounding each light emitting device 137 may be formed.

Subsequently, the molding member 151 may be cured (S49).

The molding member surrounding the light emitting device may be cured using one of thermal curing and UV curing.

The thermosetting temperature in thermosetting may be in the range of 80°C to 170°C. In this case, below the lower limit there is a problem of non-curing, and above the upper limit there is a problem of thermal decomposition.

The wavelength of UV light in UV curing may be in the range of 300 nm to 400 nm. In this case, below the lower limit there is a problem of non-curing, and above the upper limit there is a problem of decomposition of the silicon structure.

As a result of performing steps S43, S45 and S47, a plurality of light emitting devices 137 on a substrate 133 and at least one silicon film 123 on the light emitting device 137 are laminated to form a molding member 151. The configured semiconductor device array (150 in FIG. 5G ) may be manufactured.

Thereafter, as shown in FIG. 5H , the semiconductor device array 150 may be loaded-out from the chamber 130 .

By performing scribing on the semiconductor device array 150, a semiconductor device as shown in FIG. 5H may be individually manufactured.

In the individual semiconductor device cut as described above, the corner of the molding member 151 may be angled. Therefore, according to the method of manufacturing a semiconductor device according to the embodiment, the corners of the molding member 151 are angled while the thickness of the molding member 151 above the light emitting device 137 and the thickness of the light emitting device 137 are formed. Since the thickness of the molding member 151 on the side surface is the same, not only the light extraction efficiency is improved, but also the light efficiency can be improved because the light path is the same.

The semiconductor device manufactured as described above may include a substrate 133 , a light emitting device 137 disposed on the substrate 133 , and a cutting molding member 151 disposed to surround the light emitting device 137 .

The substrate 133 may be removed if necessary, but the present invention is not limited thereto.

The thickness of the molding member 151 on the side surface of the light emitting device 137 may be considered when cutting the semiconductor device array 150 to be the same as the thickness of the molding member 151 on the light emitting device 137 .

Accordingly, the thickness of the molding member 151 on the side surface of the light emitting device 137 becomes the same as the thickness of the molding member 151 on the light emitting device 137, so that the light emitted from the light emitting device 137 follows the same path. Since it can pass through the furnace molding member 151, light efficiency can be improved.

In addition, a molding member 151 having a uniform thickness is formed on the light emitting device 137 , and the molding member 151 disposed between the light emitting devices 137 is cut along the vertical direction, thereby forming the light emitting device 137 . Since the square corner has an angled shape, light efficiency may be improved due to the structure of the molding member 151 .

The above-described semiconductor device may be used, for example, as a light source of an image display device or a light source of a lighting device.

The light source of the image display device may include, for example, a backlight unit. The backlight unit may be classified into an edge type and a direct type according to the arrangement of the semiconductor device package. In the edge type, the semiconductor device package may be disposed on the side surface of the light guide plate. In the direct type, the semiconductor device package may be disposed under the display panel.

The light source of the lighting device may include a luminaire, a bulb-type lamp, and a light source of a mobile terminal.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

In the above, the embodiment has been mainly described, but this is only an example and not limiting the embodiment, and those of ordinary skill in the art to which the embodiment belongs may have several examples not illustrated above in the range that does not depart from the essential characteristics of the embodiment. It can be seen that the transformation and application of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the embodiments set forth in the appended claims.

100: courage
101: liquid silicone binder
103: phosphor
105: plate
107: release film
109: scrubber
113: silicone resin
115: scroller
119: anti-static member
121, 123: silicone film
130: chamber
131: susceptor
133: substrate
135: fixing member
137: light emitting device
139: spacer
141: flat member
143: pressing member
145: hot plate
146: lift pin
147, 149: vacuum pump
150: semiconductor device array
151: molding member

Claims (17)

delete delete providing a substrate on which a plurality of light emitting devices are aligned in a chamber;
aligning at least one silicon film on the substrate;
performing low vacuum and heating; and
Comprising the step of forming a molding member around the light emitting device by pressing the silicon film using a pressing member located on the silicon film,
The step of performing the low vacuum and heating,
Maintaining the atmospheric pressure in the chamber to reach the target atmospheric pressure of 130 Pa or less, heating the temperature of the silicon film to 80 ℃ to 150 ℃,
The step of forming the molding member,
Pressing the silicone film with a pressing pressure of 50 kPa to 150 kPa and a pressing time of 30 seconds to 180 seconds,
The at least one silicone film,
providing a liquid silicone binder containing silicone and a solvent;
forming a liquid silicone resin by mixing the liquid silicone binder with a phosphor;
coating the liquid silicone resin on a release film; and
It is prepared by drying the coated liquid silicone resin to form a silicone film,
The method of manufacturing a semiconductor device, wherein the at least one silicon film is formed to have a thickness of 150㎛ to 300㎛. 4. The method of claim 3,
Cutting the semiconductor device array on which the molding member is formed in a vertical direction further comprising the step of individually forming semiconductor devices,
The step of individually forming the semiconductor device comprises:
Cutting the semiconductor device array so that the thickness of the molding member on the side of the light emitting device is the same as the thickness of the molding member on the light emitting device,
The individually formed semiconductor device includes the substrate, the light emitting device, and the molding member cut and disposed to surround the light emitting device,
A method of manufacturing a semiconductor device in which the edges of the cut molding member are angled. providing a substrate on which a plurality of light emitting devices are aligned;
aligning at least one silicon film on the substrate;
maintaining the atmospheric pressure in the chamber to reach a target atmospheric pressure of 130 Pa or less, and heating the silicon film to a temperature of 80° C. to 150° C. to perform low vacuum and heating; and
A method comprising forming a molding member around the light emitting device by pressing the silicon film with a pressing pressure of 50 kPa to 150 kPa and a pressing time of 30 seconds to 180 seconds using a pressing member positioned on the silicon film. manufactured by
The at least one silicone film,
providing a liquid silicone binder containing silicone and a solvent;
forming a liquid silicone resin by mixing the liquid silicone binder with a phosphor;
coating the liquid silicone resin on a release film; and
It is prepared by drying the coated liquid silicone resin to form a silicone film,
The at least one silicon film is a semiconductor device formed to have a thickness of 150㎛ to 300㎛. delete delete delete delete delete delete delete delete delete delete delete delete

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