KR102417812B9 - 스트레처블 N-doped 그래핀 TFT 및 이의 제조방법 - Google Patents

스트레처블 N-doped 그래핀 TFT 및 이의 제조방법

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Publication number
KR102417812B9
KR102417812B9 KR1020200102162A KR20200102162A KR102417812B9 KR 102417812 B9 KR102417812 B9 KR 102417812B9 KR 1020200102162 A KR1020200102162 A KR 1020200102162A KR 20200102162 A KR20200102162 A KR 20200102162A KR 102417812 B9 KR102417812 B9 KR 102417812B9
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KR
South Korea
Prior art keywords
tft
doped
stretchable
preparing
same
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KR1020200102162A
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English (en)
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KR102417812B1 (ko
KR20220021517A (ko
Inventor
윤순길
한이레
Original Assignee
충남대학교산학협력단
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Priority to KR1020200102162A priority Critical patent/KR102417812B1/ko
Publication of KR20220021517A publication Critical patent/KR20220021517A/ko
Application granted granted Critical
Publication of KR102417812B1 publication Critical patent/KR102417812B1/ko
Publication of KR102417812B9 publication Critical patent/KR102417812B9/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
KR1020200102162A 2020-08-14 2020-08-14 스트레처블 N-doped 그래핀 TFT 및 이의 제조방법 KR102417812B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020200102162A KR102417812B1 (ko) 2020-08-14 2020-08-14 스트레처블 N-doped 그래핀 TFT 및 이의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020200102162A KR102417812B1 (ko) 2020-08-14 2020-08-14 스트레처블 N-doped 그래핀 TFT 및 이의 제조방법

Publications (3)

Publication Number Publication Date
KR20220021517A KR20220021517A (ko) 2022-02-22
KR102417812B1 KR102417812B1 (ko) 2022-07-05
KR102417812B9 true KR102417812B9 (ko) 2023-05-11

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KR1020200102162A KR102417812B1 (ko) 2020-08-14 2020-08-14 스트레처블 N-doped 그래핀 TFT 및 이의 제조방법

Country Status (1)

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KR (1) KR102417812B1 (ko)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012091498A1 (ko) * 2010-12-31 2012-07-05 성균관대학교산학협력단 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터
KR101349357B1 (ko) * 2012-04-03 2014-01-16 한국전기연구원 금속산화물에 의해 전도성이 향상된 그래핀 투명 전도성 필름
KR101489866B1 (ko) * 2012-10-05 2015-02-06 성균관대학교산학협력단 높은 변형률에도 안정적인 거동을 가지는 절연체 및 게이트 전극을 포함하는 그래핀 전계효과 트랜지스터, 및 이의 제조 방법
KR20150018917A (ko) * 2013-08-08 2015-02-25 삼성전자주식회사 금속 질산화물 채널층을 구비한 박막 트랜지스터 및 그 제조 방법, 이를 포함하는 디스플레이
KR102201320B1 (ko) * 2014-06-12 2021-01-11 삼성전자주식회사 반도체소자와 그 제조방법 및 반도체소자를 포함하는 전자소자
KR102017251B1 (ko) * 2017-10-26 2019-09-03 국일그래핀 주식회사 그래핀 박막의 무전사 제조방법
KR20190016649A (ko) * 2017-08-08 2019-02-19 한국전자통신연구원 그래핀 박막의 전기적 특성 제어 방법

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KR20220021517A (ko) 2022-02-22

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