KR102408639B1 - Electronic device and method of controlling electronic device - Google Patents

Abstract

One embodiment of the present invention includes a first electrode portion containing a conductive material; a second electrode part spaced apart from the first electrode and containing a conductive material; disposed between the first electrode portion and the second electrode portion and comprising a spontaneously polarizable material and formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance active layer; a first connection electrode and a second connection electrode formed on the active layer to be spaced apart from the first electrode part and the second electrode part; and an electric field controller connected to the first electrode part and the second electrode part to apply an electric field, wherein the electric field controller includes a bias voltage to the first electrode part and the second electrode part in at least the second mode. Disclosed is an electronic device for applying

Description

Electronic device and method of controlling electronic device

The present invention relates to an electronic device and a method for controlling the same.

With the development of technology and increased interest in people's convenience in life, attempts to develop various electronic products are being actively pursued.

In addition, these electronic products are becoming smaller and more integrated, and the places where they are used are increasing widely.

These electronic products include various electronic devices, for example, CPUs, memories, and other various electronic devices. These electronic devices may include various types of electrical circuits.

For example, electronic devices are used not only in computers and smartphones, but also in products in various fields such as home sensor devices for IoT and bio-electronic devices for ergonomics.

On the other hand, the use and application fields of these electric devices are rapidly increasing according to the recent speed of technological development and the rapid improvement of the living standards of users, and the demand thereof is also increasing accordingly.

According to this trend, there is a limit to realizing and controlling an electronic circuit that is easily and quickly applied to various electrical devices that are commonly used.

Meanwhile, memory devices, particularly nonvolatile memory devices, are widely used as information storage and/or processing devices of various electronic devices, such as cameras and communication devices, as well as computers.

These memory devices, particularly in terms of lifespan and speed, are being developed a lot. Most of the problems are in securing the memory lifespan and speed, but there is a limit to realizing an improved memory device.

The present invention can provide an electronic device that can be easily applied to various uses and a method for controlling the same.

One embodiment of the present invention includes a first electrode portion containing a conductive material; a second electrode part spaced apart from the first electrode and containing a conductive material; disposed between the first electrode portion and the second electrode portion and comprising a spontaneously polarizable material and formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance active layer; a first connection electrode and a second connection electrode formed on the active layer to be spaced apart from the first electrode part and the second electrode part; and an electric field controller connected to the first electrode part and the second electrode part to apply an electric field, wherein the electric field controller includes a bias voltage to the first electrode part and the second electrode part in at least the second mode. Disclosed is an electronic device for applying

In this embodiment, when the bias voltage is applied, the conduction band energy level and the balance band energy level of the active layer may be lowered.

In the present embodiment, in the second mode, a current may flow between the first connection electrode and the second connection electrode.

In this embodiment, the active layer may have different displacements in the first mode and the second mode.

Another embodiment of the present invention relates to an electronic device comprising a spontaneously polarizable material and comprising an active layer formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance. applying an electric field to the active layer so that the active layer has the first mode or the second mode; and applying a bias voltage to the active layer, wherein the electric field is spaced apart from each other with the active layer interposed therebetween, and is formed by the first electrode portion and the second electrode portion formed in contact with the active layer, and the active layer When this mode has at least the second mode, the bias voltage is applied through the first electrode part and the second electrode part, and the conduction band energy level and the balance band energy level of the active layer are adjusted by the application of the bias voltage. Disclosed is a method for controlling an electronic device that is lowered.

In this embodiment, a first connection electrode and a second connection electrode formed to be spaced apart from the first electrode part and the second electrode part on the active layer are included, and the selection of the first mode and the second mode is performed. Thus, the flow of current between the first connection electrode and the second connection electrode may be controlled.

The electronic device and its control method according to the present invention improve electrical properties and manufacturing properties of the electronic device, and can be easily applied to various uses.

1 is a cross-sectional view schematically illustrating an example of an electronic device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating an alternative embodiment of the second electrode of FIG. 1 .
3 and 4 are cross-sectional views for explaining the control of the electric field controller in order to change the first mode and the second mode of the electronic device of FIG. 1 .
5 to 9 are views for explaining the conversion of the electronic device of FIG. 1 to the first mode and the second mode.
FIG. 10 is a diagram illustrating a change in a band gap according to application of a bias voltage to a first electrode part and a second electrode part of the electronic device of FIG. 1 .
11 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.
12 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.
13 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.
14 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.
15 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.
FIG. 16 is a plan view viewed from the H direction of FIG. 15 .

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to the embodiments of the present invention shown in the accompanying drawings.

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and a method for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when described with reference to the drawings, the same or corresponding components are given the same reference numerals, and the overlapping description thereof will be omitted. .

In the following embodiments, terms such as first, second, etc. are used for the purpose of distinguishing one component from another, not in a limiting sense.

In the following examples, the singular expression includes the plural expression unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have means that the features or components described in the specification are present, and the possibility that one or more other features or components will be added is not excluded in advance.

In the drawings, the size of the components may be exaggerated or reduced for convenience of description. For example, since the size and thickness of each component shown in the drawings are arbitrarily indicated for convenience of description, the present invention is not necessarily limited to the illustrated bar.

In the following embodiments, the x-axis, the y-axis, and the z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

In cases where certain embodiments may be implemented otherwise, a specific process sequence may be performed different from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the order described.

1 is a cross-sectional view schematically illustrating an example of an electronic device according to an embodiment of the present invention, and FIG. 2 is a diagram illustrating an optional embodiment of the second electrode of FIG. 1 .

First, referring to FIG. 1 , the electronic device 100 of this embodiment includes a first electrode part 120 , a second electrode part 130 , an active layer 110 , a first connection electrode 150 , and a second connection electrode. 160 and an electric field control unit 190 may be included.

The first electrode part 120 may contain a conductive material.

For example, the first electrode part 120 may include aluminum (Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), or gold (Au). , it may be formed to contain silver (Ag) or platinum (Pt).

Also, as another example, the first electrode part 120 may be formed using a conductive metal oxide. As a specific example, the first electrode part 120 may contain strontium ruthenium oxide (SrRuO3).

Also, as another example, the first electrode part 120 may contain ( _LaxSry ) _CoOz , for example _, (La _0.5 Sr _0.5 )CoO _{3 .} Also, as another example, the first electrode part 120 may contain LaCoO3.

The second electrode part 130 may contain a conductive material and may be spaced apart from the first electrode part 120 .

For example, the second electrode part 130 may include aluminum (Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), or gold (Au). , it may be formed to contain silver (Ag) or platinum (Pt).

Also, as another example, the second electrode unit 130 may be formed using a conductive metal oxide. As a specific example, the second electrode unit 130 may contain strontium ruthenium oxide (SrRuO3).

Also, as another example, the second electrode unit 130 may contain ( _LaxSry ) _CoOz , for example _, (La _0.5 Sr _0.5 )CoO _{3 .} Also, as another example, the second electrode unit 130 may contain LaCoO3.

The first electrode part 120 and the second electrode part 130 may be formed to have different characteristics.

As an example, the first electrode part 120 and the second electrode part 130 may have different electrical characteristics, and as a specific example, the first electrode part 120 and the second electrode part 130 may each have a work function value. These may be formed to be different. Through this, an asymmetric electrical characteristic may be induced in the active layer 110 .

In an alternative embodiment, the first electrode part 120 and the second electrode part 130 may contain different materials.

As an example, the first electrode unit 120 may contain platinum (Pt), the second electrode unit 130 may contain gold (Au), and as another example, the first electrode unit 120 may contain platinum (Pt). Pt) and the second electrode part 130 may contain strontium ruthenium oxide (SrRuO3).

Also, as another example, the first electrode part 120 may contain (LaxSry) _CoOz , and as a specific example, (La _0.5 Sr _0.5 )CoO ₃ may _be included, and the second electrode part 130 may contain (La 0.5 Sr 0.5 )CoO _{3 .} ) may contain LaCoO3.

In addition to the others, the first electrode part 120 and the second electrode part 130 may be formed using various materials to have different characteristics.

For example, as shown in FIG. 2 , the second electrode unit 130 may be formed in multiple layers. Referring to FIG. 2 , the second electrode unit 130 may be formed in multiple layers.

For example, the second electrode unit 130 may include a first layer 131 and a second layer 132 , and the first layer 131 may be disposed to face the active layer 110 , and specifically For example, it may be in contact with the active layer 110 .

The first layer 131 may be formed of a material different from that of the first electrode part 120 , and the second layer 131 may include a material different from that of the first layer 131 . For example, the second layer 131 may be formed of the same material as the first electrode part 120 .

As an example, the first electrode part 120 may contain platinum (Pt), the first layer 131 of the second electrode part 130 may contain strontium ruthenium oxide (SrRuO3), and the second layer ( 132) may contain platinum (Pt).

The active layer 110 may be disposed between the first electrode part 120 and the second electrode part 130 .

The active layer 110 may include a spontaneously polarizable material.

For example, the active layer 110 may include a ferroelectric material, and may include a material with spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

In an alternative embodiment, the active layer 110 may include a perovskite-based material, for example, BaTiO ₃ , SrTiO _{3 ,} BiFe3, PbTiO3, PbZrO3, SrBi2Ta2O9.

x, y≤1)를 포함할 수 있다. In addition, as another example, the active layer 110 has an ABX3 structure, where A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 110 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _{3 -x} , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _{3 -x} , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _{3 -x} , HC(NH ₂ ) ₂ PbI _x Br _{3 -x} , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ ) NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbI _x Cl _{3 -x} , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbCl _x Br _{3 -x} (0

x, y≤1).

The active layer 110 may be formed using various other ferroelectric materials, and descriptions of all examples thereof will be omitted. In addition, when the active layer 110 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The active layer 110 has spontaneous polarization and can control the degree and direction of polarization according to application of an electric field. Also, the active layer 110 may maintain a polarized state even when the applied electric field is removed.

The active layer 110 may be formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance. Specific details on this will be described later.

In the electronic device 100 of the present embodiment, the active layer 110 may be disposed between the first electrode part 120 and the second electrode part 130 , for example, it may be disposed to be in contact with each other. In addition, the first connection electrode 150 and the second connection electrode 160 may be formed on the active layer 110 to be spaced apart from the first electrode part 120 and the second electrode part 130 .

The first connection electrode 150 and the second connection electrode 160 may be formed on the surface of the active layer 110 , respectively. Also, the first connection electrode 150 and the second connection electrode 160 may be disposed to be spaced apart from the first electrode part 120 and the second electrode part 130 , respectively.

For example, the first connection electrode 150 and the second connection electrode 160 may be disposed on a surface of the active layer 210 on which the first electrode part 120 and the second electrode part 130 are not formed, respectively. can

As a specific example, the first connection electrode 150 and the second connection electrode 160 face each other on the side of the active layer 210 on which the first electrode part 120 and the second electrode part 130 are not formed. It can be placed for viewing.

The first connection electrode 150 and the second connection electrode 160 may be formed using various conductive materials. For example, the first connection electrode 150 and the second connection electrode 160 may be formed to contain aluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten.

As an optional embodiment, the first connection electrode 150 and the second connection electrode 160 may include a structure in which a plurality of conductive layers are stacked.

As an optional embodiment, the first connection electrode 150 and the second connection electrode 160 may be formed using a conductive metal oxide, for example, indium oxide (eg In2O3), tin oxide (eg SnO2). , zinc oxide (eg ZnO), indium tin oxide alloy (eg In2O3-SnO2), or indium zinc oxide alloy (eg In2O3-ZnO).

As an optional embodiment, the first connection electrode 150 and the second connection electrode 160 may be terminal members including input/output of electrical signals.

Also, as a specific example, the first connection electrode 150 and the second connection electrode 160 may include a source electrode or a drain electrode.

The electric field controller 190 may be connected to the first electrode part 120 and the second electrode part 130 to apply an electric field to the active layer 110 .

Also, the direction of the electric field applied to the active layer 110 may be controlled through the electric field controller 190 . For example, an electric field is applied to the active layer 110 connected to the first electrode part 120 and the second electrode part 130 through the electric field controller 190, and by this electric field, the active layer 110 is moved in one direction. can be polarized, and also by changing the direction of the electric field, it is possible to control the polarization direction of the active layer 110 to change in the opposite direction. As an optional embodiment, the strength of the electric field may be controlled through the electric field controller 190 .

Also, the electric field controller 190 may apply a bias voltage to the first electrode part 120 and the second electrode part 130 to adjust the band gap of the active layer 110 . Specific details on this will be described later.

3 and 4 are cross-sectional views for explaining controlling the electric field controller for conversion to the first mode and the second mode of the electronic device of FIG. 1, and FIGS. 5 to 9 are the first electronic device of FIG. FIG. 10 is a diagram illustrating a change in a bandgap according to application of a bias voltage to the first electrode part and the second electrode part of the electronic device of FIG.

Referring to FIG. 3 , the application of the first electric field E1 to the first electrode unit 120 and the second electrode unit 130 through the electric field controller 190 of the electronic device 100 is illustrated. When the first electric field E1 is applied to the first electrode part 120 and the second electrode part 130 , the active layer 110 connected to the first electrode part 120 and the second electrode part 130 is formed with the first It may have a shape polarized in a polarization direction.

Referring to FIG. 4 , the application of the second electric field E2 to the first electrode unit 120 and the second electrode unit 130 through the electric field controller 190 of the electronic device 100 is illustrated.

The second electric field E2 may be an electric field in a direction different from that of the first electric field E1 . For example, the direction of the second electric field E2 may be opposite to the direction of the first electric field E1 .

When the second electric field E2 is applied to the first electrode part 120 and the second electrode part 130 , the active layer 110 connected to the first electrode part 120 and the second electrode part 130 becomes the first electrode part 120 and the second electrode part 130 . It may have a shape polarized in a second polarization direction opposite to the first polarization direction.

In this case, for example, the magnitude of the second electric field E2 may have the same value as the magnitude of the first electric field E1 .

Meanwhile, FIG. 5 shows a polarization history curve of the active layer 110 as an electric field is applied to the first electrode part 120 and the second electrode part 130 through the electric field controller 190 of the electronic device 100. 6 is a diagram illustrating a displacement hysteresis curve of the active layer 110 when an electric field is applied to the first electrode part 120 and the second electrode part 130 . 7 is an enlarged view of K of FIG. 6 . In FIG. 5 , the horizontal axis represents the electric field (E) and the vertical axis represents the polarization (P). In addition, in FIGS. 6 and 7 , the horizontal axis represents the electric field (E) and the vertical axis represents the displacement (S).

Referring to FIG. 5 , the polarization hysteresis curve of the electronic device 100 does not have a symmetrical shape. For example, referring to FIG. 5 , the first polarization value (positive Y-intercept value) after applying and removing a positive electric field (eg, the first electric field E1) is a negative electric field (eg, For example, it is different from the second polarization value (negative Y-intercept value) after the second electric field E2) is applied and removed. Specifically, the magnitude of the first polarization value (positive Y-intercept value) is the second polarization value (negative Y-intercept value). has a value smaller than the size of the Y-intercept of .

The difference in polarization values is because, as described above, the first electrode part and the second electrode part may have different characteristics, and through this, asymmetric electrical characteristics are induced in the active layer. For example, due to asymmetry due to the fact that the first electrode part 120 and the second electrode part 130 include different materials, even when the magnitude of the electric field is the same when applying electric fields in different directions, at the time of removing the electric field The magnitude of the polarization in the first polarization direction may be different from the magnitude of the polarization in the second polarization direction at the time of removing the electric field.

Meanwhile, in the active layer 110 , a polarized structure may be formed by applying an electric field, and displacement may occur in response thereto. In this case, the displacement history curve of the active layer 110 does not have a symmetrical shape. For example, as shown in FIGS. 6 and 7 , the first displacement SE1 after applying and removing a positive electric field (eg, the first electric field E1) is a negative electric field (eg, For example, it is different from the second displacement SE2 after the second electric field E2) is applied and removed, and specifically, the magnitude of the first displacement SE1 is greater than the magnitude of the second displacement SE2.

That is, according to the difference in the polarization values of FIG. 5 , the displacement values may have different values by applying and removing the first electric field E1 and the second electric field E2 in opposite directions in an asymmetric form.

Through this, the deformation state that occurs after removal by applying an electric field to the electronic device 100 may have two states instead of one.

For example, as shown in FIG. 8 , the active layer 110 of the electronic device 100 may have two displacement states.

Specifically, referring to FIG. 8 , the active layer 110 may selectively have a first displacement SE1 and a second displacement SE2 . The magnitude of the first displacement SE1 is greater than the magnitude of the second displacement SE2.

For example, as described above, the direction of the electric field is controlled using the electric field controller 190 of the electronic device 100, and accordingly, the direction of polarization formed in the active layer 110 is controlled to have a polarization shape as shown in FIG. and can have a displacement shape as shown in FIG. 6 .

Meanwhile, FIG. 9 is a diagram illustrating a change in the energy bandgap Eb according to a selective change in the displacement value of the active layer 110 of the electronic device 100 .

Referring to FIG. 9 , the value of the energy bandgap Eb of the active layer 110 when the active layer 110 has a first displacement SE1 is, when the active layer 110 has a second displacement SE2 , the active layer It may have a value greater than the value of the energy bandgap Eb of (110).

As the active layer 110 selectively has a difference in the magnitude of the energy band value Eb, the active layer 110 may selectively have two electrical resistances having different values.

For example, the active layer 110 may have a state (first mode) having a first electrical resistance when it has a first displacement SE1 . Also, when the active layer 110 has the second displacement SE2 , the active layer 110 may have a second electrical resistance lower than the first electrical resistance (second mode).

In addition, the active layer 110 may selectively have a state having the first electrical resistance (first mode) and a state having the electrical resistance having the second value (second mode).

For example, as described above, the polarization shape of the active layer 110 is controlled by controlling the direction of the electric field through the electric field controller 190 (see FIG. 5 ), and the displacement shape is controlled according to the polarization shape ( FIGS. 6 and 6 ). 7), the energy bandgap (Eb) value of the active layer 110 is selectively determined (refer to FIG. 9) to selectively have the first mode of high resistance or the second mode of low resistance.

As a result, the active layer 110 may selectively have one of a first mode having a relatively high electrical resistance value and a second mode having a relatively low electrical resistance value.

For example, the first mode may be maintained when the first electric field is applied and then removed, and the second mode may be maintained when the second electric field is applied and then removed.

Through this, in the first mode in which the active layer 110 has a high resistance value and the second mode in which the resistance value is low, a difference in the flow of current between the first connection electrode 150 and the second connection electrode 160 may occur. have.

For example, in the first mode, in response to being off, the flow of current between the first connection electrode 150 and the second connection electrode 160 may not occur or the flow of current may be less than a set standard, and the second In the mode, a current flow may occur between the first connection electrode 150 and the second connection electrode 160 in response to being turned on or may exceed a set criterion.

Through this, the flow of current between the first connection electrode 150 and the second connection electrode 160 of the electronic device 100 can be easily controlled.

Such an electronic device 100 can be used for various purposes.

As an example, the electronic device 100 may be used as an electrical switching structure, the first mode in which the active layer 110 has a high resistance value corresponds to off, and the active layer 110 corresponds to a second mode having a low resistance value. Mode 2 may implement a memory and other various electronic circuit components corresponding to on.

Meanwhile, the electric field controller 190 may adjust the band gap of the active layer 110 by applying a bias voltage to the first electrode part 120 and the second electrode part 130 .

For example, when a positive bias voltage is applied through the first electrode part 120 and the second electrode part 130 when the active layer 110 has the first mode and the second mode, the first mode and the second mode In the mode state, the conduction band energy level of the energy band may be lowered from Ec to Ec', and the energy level of the balance band may be lowered from Ev to Ev'. Accordingly, the flow of current between the first connection electrode 150 and the second connection electrode 160 may be more smoothly generated in the second mode corresponding to the on state. On the other hand, even in the first mode corresponding to off (off), the conduction band energy level and the balance band energy level may be lowered, but because the Schottky barrier exists, the flow of current does not occur or the flow of current may be less than the set standard. have.

As another example, the electric field controller 190 may apply a bias voltage to the first electrode part 120 and the second electrode part 130 only when the active layer 110 is in the second mode state. In this case, the conduction band energy level and the balance band energy level of the active layer 110 are lowered in the second mode state, but the band gap of the active layer 110 may not change in the first mode state, thereby turning off In the first mode corresponding to ) and the second mode corresponding to on, the flow of current between the first connection electrode 150 and the second connection electrode 160 may be more reliably controlled.

Meanwhile, the polarization state of the active layer 110 should not be changed by the bias voltage applied to the first electrode part 120 and the second electrode part 130 . Accordingly, the magnitude of the bias voltage applied to the first electrode part 120 and the second electrode part 130 is, in order to change the polarization direction of the active layer 110 , the first electric field (E1 in FIG. 3 ) in the active layer 110 . Alternatively, the magnitude of the voltage applied to the first electrode part 120 and the second electrode part 130 to apply the second electric field (E2 in FIG. 4 ) should be smaller than the magnitude.

11 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.

Referring to FIG. 11 , the electronic device 200 of this embodiment includes a first electrode part 220 , a second electrode part 230 , an active layer 210 , a first connection electrode 250 , and a second connection electrode 260 . and an electric field controller 290 . Hereinafter, the same content as described above will not be repeatedly described, and only differences will be described.

The first electrode part 220 and the second electrode part 220 may be spaced apart from each other. The first electrode part 220 and the second electrode part 230 may have the same characteristics or may have different electrical characteristics. In addition, the first electrode part 220 or the second electrode part 230 may have a stacked shape.

The active layer 210 is disposed between the first electrode part 220 and the second electrode part 230 and may include a spontaneously polarizable material. Accordingly, the degree and direction of polarization of the active layer 210 are controlled according to the application of the electric field, and the polarization state can be maintained even when the applied electric field is removed.

An ion implantation region may be formed in one region of the active layer 210 .

For example, the ion implantation process may be performed using a method such as ion implantation in which a dopant is implanted into a surface of the active layer 210 facing the first electrode part 220 .

Also, as another example, the ion implantation process may be performed using a method such as ion implantation in which a dopant is implanted into a surface of the active layer 210 facing the second electrode 530 .

Ion implantation into the active layer 210 may be performed using various materials.

As an alternative embodiment, an ion implantation region using a transition metal may be formed in the active layer 210 .

In addition, as an alternative embodiment, an ion implantation region using ytterbium (Yb) or fluorine (F) may be formed in the active layer 210 .

The active layer 210 may be formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance.

The first connection electrode 250 and the second connection electrode 260 may be terminal members including input/output of electrical signals.

The electric field controller 290 may be connected to the first electrode part 220 and the second electrode part 230 to apply an electric field.

Also, the direction of the electric field may be controlled through the electric field controller 290 . For example, an electric field is applied to the active layer 210 connected to the first electrode part 220 and the second electrode part 230 through the electric field controller 290, and by this electric field, the active layer 210 is moved in one direction. may be polarized to , and the direction of the polarization of the active layer 210 may be controlled to change in the opposite direction by changing the direction of the electric field. As an optional embodiment, the strength of the electric field may be controlled through the electric field controller 290 .

Also, the electric field controller 290 may apply a bias voltage to the first electrode part 220 and the second electrode part 230 to adjust the band gap of the active layer 210 .

Hereinafter, an operation of selecting the first mode and the second mode of the active layer 210 by controlling the electric field of the electronic device 200 will be described.

When a first electric field is applied to the first electrode part 220 and the second electrode part 230 through the electric field controller 290 of the electronic device 200 , the first electrode part 220 and the second electrode part 230 . The active layer 210 connected to may have a shape polarized in the first polarization direction.

In addition, a second electric field may be applied to the first electrode part 220 and the second electrode part 230 through the electric field controller 290 of the electronic device 200 . The second electric field may be an electric field in a direction different from that of the first electric field. For example, the direction of the second electric field may be opposite to the direction of the first electric field.

When such a second electric field is applied to the first electrode part 220 and the second electrode part 230 , the active layer 210 connected to the first electrode part 220 and the second electrode part 230 moves in the first polarization direction. It may have a shape polarized in a second polarization direction opposite to the polarization direction. In this case, for example, the magnitude of the second electric field may have the same value as the magnitude of the first electric field.

Meanwhile, the polarization hysteresis curve of the electronic device 200 of the present embodiment does not have a symmetrical shape. For example, the first polarization value (positive Y-intercept value in the polarization hysteresis curve) after applying and removing a positive electric field (for example, the first electric field E1) as shown in FIG. It is different from the second polarization value (negative Y-intercept value in the polarization hysteresis curve) after application and removal of a negative electric field (for example, the second electric field E2), and specifically, the first polarization value (polarization hysteresis curve) The magnitude of the positive Y-intercept value in ? may be smaller than the magnitude of the second polarization value (the negative Y-intercept value in the polarization hysteresis curve).

This difference in polarization value is due to the ion implantation region formed in one region of the active layer 210 , for example, the surface facing the first electrode unit 220 or the surface facing the second electrode unit 230 as described above. can

As a specific example, a surface of the active layer 210 adjacent to the first electrode part 220 or the second electrode part 230 may have surface characteristics such as charge concentration changed due to the ion implantation region, and through this, the first electrode Even when the part 220 and the second electrode part 230 are formed of the same material, the polarization value when the electric field is applied through the electric field controller 290, for example, when the first electric field and the second electric field in the opposite direction are applied. difference may occur.

This difference in polarization affects the displacement characteristics, and for example, as shown in FIG. 6 above, the active layer 210 of this embodiment may be displaced by applying an electric field.

As a specific example, the displacement hysteresis curve of the electronic device 200 may not have a symmetrical shape, and the first displacement SE1 after applying and removing a positive electric field (eg, the first electric field E1) is , different from the second displacement SE2 after application and removal of a negative electric field (eg, the second electric field E2), and specifically, the magnitude of the first displacement SE1 is the second displacement SE2 may have a value greater than the size of

That is, according to the difference in the polarization values, the displacement values are also asymmetrical, and may have different values by applying and removing the first electric field E1 and the second electric field E2 in opposite directions. The deformation state that occurs after removal by applying an electric field to the electronic device 500 may have two states instead of one.

For example, as shown in FIG. 8 , the active layer 210 of the electronic device 500 may have two displacement states.

Specifically, the active layer 210 may selectively have a first displacement SE1 and a second displacement SE2, and the magnitude of the first displacement SE1 is greater than the magnitude of the second displacement SE2. .

For example, as described above, the direction of the electric field is controlled by using the electric field controller 590 of the electronic device 500, and accordingly, the polarization direction formed in the active layer 210 is controlled to remove the polarization shape and the electric field corresponding thereto. It is possible to have two displacement states of different values.

In addition, when the active layer 210 has a large first displacement SE1 , the energy bandgap of the active layer 210 is a second displacement in which the active layer 210 has a smaller value than the first displacement SE1 . When SE2 is present, it may have a value greater than the value of the energy bandgap of the active layer 210 .

As the active layer 210 selectively has a difference in the magnitude of the energy band value, the active layer 210 may selectively have two electrical resistances having different values.

For example, when the active layer 210 has the first displacement SE1, the active layer 210 may have a first electrical resistance (first mode). Also, when the active layer 210 has the second displacement SE2 , the active layer 210 may have a state (second mode) having a second electrical resistance lower than the first electrical resistance.

In addition, the active layer 210 may selectively have a state having the first electrical resistance (first mode) and a state having the electrical resistance having a second value (second mode).

For example, as described above, the polarization form of the active layer 210 is controlled by controlling the direction of the electric field through the electric field controller 590, and the displacement form is controlled according to the polarization form, and thus the energy of the active layer 210 is controlled. The bandgap value may be selectively determined to selectively have the first mode of high resistance or the second mode of low resistance.

Also, the electric field controller 290 may adjust the band gap of the active layer 210 by applying a bias voltage to the first electrode part 220 and the second electrode part 230 .

For example, when a positive bias voltage is applied to the active layer 210 through the first electrode part 220 and the second electrode part 230 , the conduction band energy level of the energy band of the active layer 210 and the balance band energy All levels are lowered, so that in the second mode, the flow of current between the first connection electrode 250 and the second connection electrode 260 may be more smoothly generated.

As another example, the electric field controller 290 may apply a bias voltage to the first electrode part 220 and the second electrode part 230 only when the active layer 210 is in the second mode state. Therefore, only in the second mode state, the conduction band energy level and the balance band energy level of the active layer 210 are lowered, and in the first mode state, the band gap of the active layer 210 does not change, so that in the first mode and the second mode The flow of current between the first connection electrode 250 and the second connection electrode 260 may be more reliably controlled.

On the other hand, the magnitude of the bias voltage applied to the first electrode part 220 and the second electrode part 230 is the first electrode part 220 and the second electrode part 220 so as to apply an electric field to change the polarization direction of the active layer 210 . It should be smaller than the magnitude of the voltage applied to the electrode part 230 .

12 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.

Referring to FIG. 12 , the electronic device 300 of this embodiment includes a first electrode part 320 , a second electrode part 330 , an active layer 310 , a first connection electrode 350 , and a second connection electrode 360 . and an electric field controller 390 . Among them, the same contents as the first electrode part 320 , the second electrode part 330 , the first connection electrode 350 , the second connection electrode 360 , and the electric field controller 390 will not be repeatedly described. , only the differences are explained.

The active layer 310 may include a spontaneously polarizable material.

For example, the active layer 310 may include a ferroelectric material and may include a material with spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional embodiment, the active layer 310 may include a perovskite-based material, for example, BaTiO ₃ , SrTiO _{3 ,} BiFe3, PbTiO3, PbZrO3, SrBi2Ta2O9.

x, y≤1)를 포함할 수 있다. Also, as another example, the active layer 310 has an ABX3 structure, where A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 310 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _{3 -x} , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _{3 -x} , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _{3 -x} , HC(NH ₂ ) ₂ PbI _x Br _{3 -x} , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ ) NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbI _x Cl _{3 -x} , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbCl _x Br _{3 -x} (0

x, y≤1).

The active layer 310 may be formed using various other ferroelectric materials, and descriptions of all examples thereof will be omitted. In addition, when the active layer 310 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The active layer 310 has spontaneous polarization and can control the degree and direction of polarization according to the application of an electric field. Also, the active layer 310 may maintain a polarized state even when the applied electric field is removed.

A surface treatment region may be formed in one region of the active layer 310 .

For example, an oxygen change region, specifically, a surface treatment region including an oxygen depletion region, may be formed on a surface of the active layer 310 facing the first electrode 320 by performing a heat treatment process.

Also, as another example, an oxygen change region, specifically, a surface treatment region including an oxygen depletion region, may be formed on a surface of the active layer 310 facing the second electrode part 330 by performing a heat treatment process.

Through the formation of the surface treatment region, the interface characteristics between the active layer 310 and the first electrode part 320 may be different from those between the active layer 310 and the second electrode part 330 . Due to the change in the interface properties, the electric field inside the active layer 310 may be induced asymmetrically.

That is, a surface treatment region including a surface treatment region is selectively formed in a region facing the first electrode unit 320 or a region facing the second electrode unit 330 among the regions of the active layer 310 to form a surface treatment region within the active layer 310 . It is possible to achieve asymmetrical electric field characteristics in .

The active layer 310 may be formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance.

An electric field is applied to the active layer 310 connected to the first electrode unit 320 and the second electrode unit 330 through the electric field control unit 390, and by this electric field, the active layer 310 is polarized in one direction. Also, by changing the direction of the electric field, the polarization direction of the active layer 310 may be controlled to change in the opposite direction.

As an optional embodiment, the strength of the electric field may be controlled through the electric field controller 390 .

An operation of selecting the first mode and the second mode of the active layer 310 by controlling the electric field of the electronic device 300 will be described.

When the first electric field E1 is applied to the first electrode part 320 and the second electrode part 330 through the electric field controller 390 of the electronic device 300 , the first electrode part 320 and the second electrode part The active layer 310 connected to the 330 may have a shape polarized in the first polarization direction.

Also, the second electric field E2 may be applied to the first electrode unit 320 and the second electrode unit 330 through the electric field controller 390 of the electronic device 300 .

The second electric field E2 may be an electric field in a direction different from that of the first electric field E1 . For example, the direction of the second electric field E2 may be opposite to the direction of the first electric field E1 .

When this second electric field E2 is applied to the first electrode part 320 and the second electrode part 330 , the active layer 310 connected to the first electrode part 320 and the second electrode part 330 becomes the first electrode part 320 and the second electrode part 330 . It may have a shape polarized in a second polarization direction opposite to the first polarization direction.

In this case, for example, the magnitude of the second electric field E2 may have the same value as the magnitude of the first electric field E1 .

The polarization hysteresis curve of the electronic device 300 of the present embodiment does not have a symmetrical shape. For example, the first polarization value (positive Y-intercept value in the polarization hysteresis curve) after applying and removing a positive electric field (for example, the first electric field E1) as shown in FIG. It is different from the second polarization value (negative Y-intercept value in the polarization hysteresis curve) after application and removal of a negative electric field (for example, the second electric field E2), and specifically, the first polarization value (polarization hysteresis curve) The magnitude of the positive Y-intercept value in ? may be smaller than the magnitude of the second polarization value (the negative Y-intercept value in the polarization hysteresis curve).

This difference in polarization value is due to the surface treatment area formed on one region of the active layer 310, for example, the surface facing the first electrode unit 320 or the surface facing the second electrode unit 330 as described above. can As a specific example, the surface of the active layer 310 adjacent to the first electrode part 320 or the second electrode part 330 suffers from oxygen deprivation due to the heat treatment process, and by controlling the formation of the oxygen depletion area, the surface characteristics are improved. A modified surface treatment area may be formed.

Through this, even when the first electrode part 320 and the second electrode part 330 are formed of the same material, when the electric field is applied through the electric field controller 390, for example, the first electric field and the second electric field in the opposite direction It may be formed upon application.

This difference in polarization affects the displacement characteristics, and for example, as shown in FIG. 6 above, the active layer 310 of this embodiment may be displaced by applying an electric field.

As a specific example, the displacement hysteresis curve of the electronic device 300 may not have a symmetrical shape, and the first displacement SE1 after applying and removing a positive electric field (eg, the first electric field E1) is , is different from the second displacement SE2 after application and removal of a negative electric field (eg, the second electric field E2), and specifically, the magnitude of the first displacement SE1 is equal to that of the second displacement SE2. It may have a value greater than the size.

That is, according to the difference in the polarization values, the displacement values are also asymmetrical, and may have different values by applying and removing the first electric field E1 and the second electric field E2 in opposite directions. The deformation state that occurs after removing by applying an electric field to the electronic device 300 may have two states instead of one.

For example, as shown in FIG. 8 , the active layer 310 of the electronic device 300 may have two displacement states.

Specifically, the active layer 310 may selectively have a first displacement SE1 and a second displacement SE2, and the magnitude of the first displacement SE1 is greater than the magnitude of the second displacement SE2. .

For example, as described above, the direction of the electric field is controlled using the electric field controller 390 of the electronic device 300 , and accordingly, the polarization direction formed in the active layer 310 is controlled to remove the polarization shape and the electric field corresponding thereto. It is possible to have two displacement states of different values.

In addition, when the active layer 310 has a large first displacement SE1 , the energy bandgap of the active layer 310 is a second displacement in which the active layer 310 has a smaller value than the first displacement SE1 . It may have a value greater than the value of the energy bandgap of the active layer 310 when it has SE2.

As the active layer 310 selectively has a difference in the magnitude of the energy band value, the active layer 310 may selectively have two electrical resistances of different values.

For example, the active layer 310 may have a state (first mode) having a first electrical resistance when it has a first displacement SE1 . Also, when the active layer 310 has the second displacement SE2 , the active layer 310 may have a state (second mode) having a second electrical resistance lower than the first electrical resistance.

In addition, the active layer 310 may selectively have a state having the first electrical resistance (first mode) and a state having the electrical resistance having the second value (second mode).

For example, as described above, the polarization form of the active layer 310 is controlled by controlling the direction of the electric field through the electric field controller 390 as described above, and the displacement form is controlled according to the polarization form, and thus the energy of the active layer 310 is controlled. The bandgap value may be selectively determined to selectively have the first mode of high resistance or the second mode of low resistance.

Also, the electric field controller 390 may apply a bias voltage to the first electrode part 320 and the second electrode part 330 to adjust the band gap of the active layer 310 .

For example, when a positive bias voltage is applied to the active layer 310 through the first electrode part 320 and the second electrode part 330 , the conduction band energy level and the balance band energy of the energy band of the active layer 310 are applied. All of the levels are lowered, so that in the second mode, a current may more smoothly flow between the first connection electrode 350 and the second connection electrode 360 .

As another example, the electric field controller 390 may apply a bias voltage to the first electrode part 320 and the second electrode part 330 only when the active layer 310 is in the second mode state. Therefore, in the first mode and in the second mode, the conduction band energy level and the balance band energy level of the active layer 310 are lowered only in the second mode state, and the band gap of the active layer 310 does not change in the first mode state. The flow of current between the first connection electrode 350 and the second connection electrode 360 may be more reliably controlled.

On the other hand, the magnitude of the bias voltage applied to the first electrode part 320 and the second electrode part 330 is such that an electric field for changing the polarization direction of the active layer 310 is applied to the first electrode part 320 and the second electrode part 330 . It should be smaller than the magnitude of the voltage applied to the electrode part 330 .

13 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.

Referring to FIG. 13 , the electronic device 400 of this embodiment includes a first electrode part 420 , a second electrode part 430 , an active layer 410 , a first connection electrode 450 , and a second connection electrode 460 . and an electric field controller 490 . Among the first electrode part 420 , the second electrode part 430 , the first connection electrode 450 , the second connection electrode 460 , and the electric field controller 490 , the same content as described above will not be repeatedly described. , only the differences are explained.

Active layer 410 may include a ferroelectric material, and may include a material with spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

The active layer 410 may include a first layer 411 and a second layer 412 .

The first layer 411 may be adjacent to the first electrode part 420 , and the second layer 412 may be adjacent to the second electrode part 430 .

The first layer 411 of the active layer 410 may be disposed between the second layer 412 and the first electrode part 420 .

As an optional embodiment, the first layer 411 of the active layer 410 may include a perovskite-based material, for example, BaTiO _{3 ,} SrTiO _{3 ,} BiFe3, PbTiO3, PbZrO3, SrBi2Ta2O9 It may include.

x, y≤1)를 포함할 수 있다. In addition, as another example, the first layer 411 of the active layer 410 has an ABX3 structure, A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure. may include, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 410 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _{3 -x} , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _{3 -x} , CH ₃ NH ₃ PbClxBr _{3 -x} , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _{3 -x} , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _{3 -x} , (CH ₃ ) NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _{1- y} PbI _x Br _{3 -x} , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbCl _x Br _{3 -x} (0

x, y≤1).

The first layer 411 of the active layer 410 may be formed using various other ferroelectric materials, and descriptions of all examples thereof will be omitted. In addition, when the first layer 411 of the active layer 410 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The second layer 412 of the active layer 410 may be disposed between the first layer 411 and the second electrode part 430 .

As an optional embodiment, the second layer 412 of the active layer 410 may include a perovskite-based material, for example, BaTiO _{3 ,} SrTiO _{3 ,} BiFe3, PbTiO3, PbZrO3, SrBi2Ta2O9 It may include.

x, y≤1)를 포함할 수 있다. In addition, as another example, the second layer 412 of the active layer 410 has an ABX3 structure, where A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure. may include, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 410 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _{3 -x} , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _{3 -x} , CH ₃ NH ₃ PbClxBr _{3 -x} , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _{3 -x} , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _{3 -x} , (CH ₃ ) NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _{1- y} PbI _x Br _{3 -x} , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1- y} PbCl _x Br _{3 -x} (0

x, y≤1).

The second layer 412 of the active layer 410 may be formed using various other ferroelectric materials, and descriptions of all examples thereof will be omitted. In addition, when the second layer 412 of the active layer 410 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The active layer 410 has spontaneous polarization and can control the degree and direction of polarization according to application of an electric field. Also, the active layer 410 may maintain a polarized state even when the applied electric field is removed.

The first layer 411 and the second layer 412 of the active layer 410 may have different properties.

For example, the first layer 411 and the second layer 412 of the active layer 410 may each include different materials.

As an alternative embodiment, the first layer 411 of the active layer 410 may include one of the above materials, for example, it contains PbTiO3, and the second layer 412 may include the first layer 412 of the above materials. It may contain a material different from that of the first layer 411 , for example, BaTiO ₃ .

Accordingly, among the regions of the active layer 410 , the region facing the first electrode unit 420 and the region facing the second electrode unit 430 may have different characteristics, and electric field characteristics within the active layer 410 may be asymmetrical. can be implemented as

The active layer 410 may be formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance.

Specific details on this will be described later.

The electric field controller 490 may be connected to the first electrode part 420 and the second electrode part 430 to apply an electric field.

Also, the direction of the electric field may be controlled through the electric field controller 490 . For example, an electric field is applied to the active layer 410 connected to the first electrode unit 420 and the second electrode unit 430 through the electric field control unit 490, and by this electric field, the active layer 410 moves in one direction. may be polarized, and also the direction of the polarization of the active layer 410 may be controlled to change in the opposite direction by changing the direction of the electric field.

As an optional embodiment, the strength of the electric field may be controlled through the electric field controller 490 .

An operation of selecting the first mode and the second mode of the active layer 410 by controlling the electric field of the electronic device 400 will be described.

When the first electric field E1 is applied to the first electrode part 420 and the second electrode part 430 through the electric field controller 490 of the electronic device 400 , the first electrode part 420 and the second electrode part The active layer 410 connected to the 430 may have a shape polarized in the first polarization direction.

Also, the second electric field E2 may be applied to the first electrode unit 420 and the second electrode unit 430 through the electric field controller 490 of the electronic device 400 .

The second electric field E2 may be an electric field in a direction different from that of the first electric field E1 . For example, the direction of the second electric field E2 may be opposite to the direction of the first electric field E1 .

When the second electric field E2 is applied to the first electrode part 420 and the second electrode part 430 , the active layer 410 connected to the first electrode part 420 and the second electrode part 430 becomes the first electrode part 420 and the second electrode part 430 . It may have a shape polarized in a second polarization direction opposite to the first polarization direction.

In this case, for example, the magnitude of the second electric field E2 may have the same value as the magnitude of the first electric field E1 .

The polarization hysteresis curve of the electronic device 400 of the present embodiment does not have a symmetrical shape. For example, the first polarization value (positive Y-intercept value in the polarization hysteresis curve) after applying and removing a positive electric field (for example, the first electric field E1) as shown in FIG. It is different from the second polarization value (negative Y-intercept value in the polarization hysteresis curve) after application and removal of a negative electric field (for example, the second electric field E2), and specifically, the first polarization value (polarization hysteresis curve) The magnitude of the positive Y-intercept value in ? may be smaller than the magnitude of the second polarization value (the negative Y-intercept value in the polarization hysteresis curve).

As described above, the difference in polarization values results in the formation of the first layer 411 in one region of the active layer 410 , for example, in the region facing the first electrode part 420 , and the second electrode part 430 . This may be due to the formation of the second layer 412 different from the first layer 411 in the facing region.

As a specific example, the first layer 411 of the active layer 410 contains PbTiO3 as one of the various materials of the active layer 410 , and the second layer 412 includes the first layer 411 of the various materials of the active layer 410 . It may contain a material different from that of the layer 411, for example, BaTiO ₃ , and through this, even when the first electrode part 420 and the second electrode part 430 are formed of the same material, the electric field controller 490 When an electric field is applied, for example, a difference in polarization values may occur when a first electric field and a second electric field in an opposite direction are applied.

This difference in polarization affects the displacement characteristics, and for example, as shown in FIG. 6 above, the active layer 410 of this embodiment may be displaced by applying an electric field.

As a specific example, the displacement hysteresis curve of the electronic device 400 may not have a symmetrical shape, and the first displacement SE1 after applying and removing a positive electric field (eg, the first electric field E1) is , different from the second displacement SE2 after application and removal of a negative electric field (eg, the second electric field E2), and specifically, the magnitude of the first displacement SE1 is the second displacement SE2 may have a value greater than the size of

That is, according to the difference in the polarization values, the displacement values are also asymmetrical, and may have different values by applying and removing the first electric field E1 and the second electric field E2 in opposite directions. The deformation state that occurs after removal by applying an electric field to the electronic device 400 may have two states instead of one.

For example, as shown in FIG. 8 , the active layer 410 of the electronic device 400 may have two displacement states.

Specifically, the active layer 410 may selectively have a first displacement SE1 and a second displacement SE2, and the magnitude of the first displacement SE1 is greater than the magnitude of the second displacement SE2. .

For example, as described above, the direction of the electric field is controlled by using the electric field controller 490 of the electronic device 400, and accordingly, the polarization direction formed in the active layer 410 is controlled to remove the polarization shape and the electric field corresponding thereto. It is possible to have two displacement states of different values.

In addition, when the active layer 410 has a large first displacement SE1 , the energy bandgap of the active layer 410 is a second displacement in which the active layer 410 has a smaller value than the first displacement SE1 . It may have a value greater than the value of the energy bandgap of the active layer 410 when it has SE2.

As the active layer 410 selectively has a difference in the magnitude of the energy band value, the active layer 410 may selectively have two electrical resistances of different values.

For example, when the active layer 410 has a first displacement SE1, it may have a state (a first mode) having a first electrical resistance. Also, when the active layer 410 has the second displacement SE2 , the active layer 410 may have a second electrical resistance lower than the first electrical resistance (second mode).

In addition, the active layer 410 may selectively have a state having the first electrical resistance (first mode) and a state having the electrical resistance having the second value (second mode).

For example, as described above, the polarization form of the active layer 410 is controlled by controlling the direction of the electric field through the electric field controller 490, and the displacement form is controlled according to the polarization form, and thus the energy of the active layer 410 is controlled. The bandgap value may be selectively determined to selectively have the first mode of high resistance or the second mode of low resistance.

In addition, the electric field controller 490 may adjust the band gap of the active layer 410 by applying a bias voltage to the first electrode part 420 and the second electrode part 430 .

For example, when a positive bias voltage is applied to the active layer 410 through the first electrode part 420 and the second electrode part 430 , the conduction band energy level of the energy band of the active layer 410 and the balance band energy All levels are lowered, so that current may more smoothly flow between the first connection electrode 450 and the second connection electrode 460 in the second mode.

On the other hand, the magnitude of the bias voltage applied to the first electrode part 420 and the second electrode part 430 is such that an electric field for changing the polarization direction of the active layer 410 is applied to the first electrode part 420 and the second electrode part 430 . It should be smaller than the magnitude of the voltage applied to the electrode part 430 .

As another example, the electric field controller 490 may apply a bias voltage to the first electrode part 420 and the second electrode part 430 only when the active layer 410 is in the second mode state. Therefore, in the first mode and in the second mode, the conduction band energy level and the balance band energy level of the active layer 410 are lowered only in the second mode state, and the band gap of the active layer 410 does not change in the first mode state. The flow of current between the first connection electrode 450 and the second connection electrode 460 may be more reliably controlled.

14 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention.

Referring to FIG. 14 , the electronic device 500 of this embodiment includes a first electrode part 520 , a second electrode part 530 , an active layer 510 , a first connection electrode 550 , and a second connection electrode 560 . and an electric field controller 590 .

The first electrode part 520 , the second electrode part 530 , the active layer 510 , and the electric field controller 590 are described in the electronic devices 100 , 200 , 300 , and 400 of the embodiments of FIGS. 1 to 13 . Since it can be applied and modified within the same or similar range as necessary, a detailed description will be omitted and different parts will be mainly described.

The first connection electrode 550 and the second connection electrode 560 may be formed on the surface of the active layer 510 to be spaced apart from each other.

Also, the first connection electrode 550 and the second connection electrode 560 may be disposed to be spaced apart from the first electrode part 520 and the second electrode part 530 , respectively.

For example, the first connection electrode 550 may be disposed to be spaced apart from the first electrode part 520 on the upper surface of the active layer 510 , and as a specific example, the first electrode part in one region of the upper surface of the active layer 510 . The first connection electrode 550 may be formed in a region in which the 520 is formed and different from the region in which the first electrode part 520 is formed among the regions of the upper surface of the active layer 510 .

In addition, the second connection electrode 560 may be disposed to be spaced apart from the second electrode part 530 on the lower surface of the active layer 510 , and as a specific example, the second electrode part 530 in one region of the lower surface of the active layer 510 . .

The first connection electrode 550 and the second connection electrode 560 may be formed using various conductive materials. For example, the first connection electrode 550 and the second connection electrode 560 may be formed to contain aluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten.

As an optional embodiment, the first connection electrode 550 and the second connection electrode 560 may include a structure in which a plurality of conductive layers are stacked.

ZnO)을 함유하도록 형성할 수 있다.As an optional embodiment, the first connection electrode 550 and the second connection electrode 560 may be formed using a conductive metal oxide, for example, indium oxide (eg, In ₂ O ₃ ), tin oxide (eg , SnO ₂ ), zinc oxide (eg ZnO), indium tin oxide alloy (eg In ₂ O ₃ *?*SnO ₂ ) or indium zinc oxide alloy (eg In ₂ O ₃ )

ZnO).

As an optional embodiment, the first connection electrode 550 and the second connection electrode 560 may be terminal members including input/output of electrical signals.

Also, as a specific example, the first connection electrode 550 and the second connection electrode 560 may include a source electrode or a drain electrode.

In the electronic device 500 according to the present embodiment, the active layer 510 may be disposed between the first electrode part 520 and the second electrode part 530 , for example, to be in contact with each other. In addition, the first connection electrode 550 and the second connection electrode 560 may be formed on the active layer 510 to be spaced apart from the first electrode part 520 and the second electrode part 530 .

In addition, the first electrode part 520 and the first connection electrode 550 are formed on one surface of the active layer 510 , and the second electrode part 530 and the second electrode part 530 are formed on the other surface of the active layer 510 . A second connection electrode 560 may be formed. Through this, miniaturization or integration of the electronic device 500 can be easily implemented.

In addition, in some cases, the first electrode part 520 and the first connection electrode 550 are formed by simultaneously patterning using the same material, and the second electrode part 530 and the second connection electrode 560 are formed of the same material. It can be formed by simultaneously patterning using the same, thereby improving the manufacturing characteristics of the electronic device 500 and can easily form a fine line width structure through precise pattern formation.

On the other hand, in this embodiment, the electric field inside the active layer 510 can be asymmetrically induced as in the above-described embodiments, and therefore, when electric fields in different directions are applied, even when the electric fields have the same magnitude, the electric field is removed at the time of removal. The magnitude of the polarization in the first polarization direction may be different from the magnitude of the polarization in the second polarization direction at the time of removing the electric field.

Accordingly, the active layer 510 may have different first and second displacements, and the active layer 510 may easily implement the first mode and the second mode having two different resistances.

Through this, a difference in the flow of current between the first connection electrode and the second connection electrode may occur in the first mode in which the active layer 510 has a high resistance value and the second mode in which the resistance value is low. For example, in response to the first mode being off (off), the flow of current between the first connection electrode and the second connection electrode may not occur or the flow of current may be less than a set standard, and the second mode is on Correspondingly, a flow of current between the first connection electrode and the second connection electrode may occur or may exceed a set criterion.

In addition, when a positive bias voltage is applied to the active layer 510 through the first electrode part 520 and the second electrode part 530 , the conduction band energy level and the balance band energy level of the energy band of the active layer 510 are All of them are lowered, so that the flow of current between the first connection electrode 550 and the second connection electrode 560 may occur more smoothly.

Through this, it is possible to easily control the flow of current between the first connection electrode 550 and the second connection electrode 560 of the electronic device.

As a result, the electronic device 500 can be applied to implement a memory and other various electronic circuit components.

15 is a cross-sectional view schematically illustrating an electronic device according to another embodiment of the present invention, and FIG. 16 is a plan view viewed from the H direction of FIG. 15 .

15 and 16 , the electronic device 600 of this embodiment includes a first electrode part 620 , a second electrode part 630 , an active layer 610 , an electric field controller 690 , and a first connection electrode 650 . ) and a second connection electrode 660 .

The first electrode part 620 , the second electrode part 630 , the active layer 610 , and the electric field controller 690 are described in the electronic devices 100 , 200 , 300 , and 400 of the embodiments of FIGS. 1 to 12 . Since it can be applied and modified within the same or similar range as necessary, a detailed description will be omitted and different parts will be mainly described.

The first connection electrode 650 and the second connection electrode 660 may be formed to be spaced apart from each other on the surface of the active layer 610 , respectively.

Also, the first connection electrode 650 and the second connection electrode 660 may be disposed to be spaced apart from the first electrode part 620 and the second electrode part 630 , respectively.

For example, the first connection electrode 650 may be disposed to be spaced apart from the first electrode unit 620 on the upper surface of the active layer 610 , and as a specific example, the first connection electrode 650 may be disposed on one region of the upper surface of the active layer 610 . The first electrode part 620 may be formed so that the 650 is formed and surrounds the first connection electrode 650 on the upper surface of the active layer 610 .

The first electrode part 620 may include an open part 620H, and the first connection electrode 650 may be disposed in the open part 620H to be spaced apart from the first electrode part 620 .

In addition, the second connection electrode 660 may be disposed to be spaced apart from the second electrode part 630 on the lower surface of the active layer 610 , and as a specific example, the second connection electrode 660 in one region of the lower surface of the active layer 610 . ) is formed and the second electrode part 630 may be formed on the lower surface of the active layer 610 to surround the second connection electrode 660 .

The second electrode part 630 may include an open part 630H, and the second connection electrode 560 may be disposed in the open part 630H to be spaced apart from the second electrode part 630 .

The first connection electrode 650 and the second connection electrode 660 may be formed using various conductive materials. For example, the first connection electrode 650 and the second connection electrode 660 may be formed to contain aluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten.

As an optional embodiment, the first connection electrode 650 and the second connection electrode 660 may include a structure in which a plurality of conductive layers are stacked.

SnO₂) 또는 산화 인듐 산화 아연 합금(예, In₂O₃

ZnO)을 함유하도록 형성할 수 있다.As an optional embodiment, the first connection electrode 650 and the second connection electrode 660 may be formed using a conductive metal oxide, for example, indium oxide (eg, In ₂ O ₃ ), tin oxide (eg , SnO ₂ ), zinc oxide (eg ZnO), indium oxide tin oxide alloy (eg In ₂ O ₃ )

SnO ₂ ) or an indium oxide zinc oxide alloy (eg In ₂ O ₃ )

ZnO).

As an optional embodiment, the first connection electrode 650 and the second connection electrode 660 may be terminal members including input/output of electrical signals.

Also, as a specific example, the first connection electrode 650 and the second connection electrode 660 may include a source electrode or a drain electrode.

As such, the present invention has been described with reference to the embodiments shown in the drawings, which are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. . Accordingly, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

The specific implementations described in the embodiment are only embodiments, and do not limit the scope of the embodiment in any way. In addition, unless there is a specific reference such as "essential", "importantly", etc., it may not be a necessary component for the application of the present invention.

In the specification of embodiments (especially in the claims), the use of the term “the” and similar referential terms may be used in both the singular and the plural. In addition, when a range is described in the embodiment, it includes the invention to which individual values belonging to the range are applied (unless there is a description to the contrary), and each individual value constituting the range is described in the detailed description. . Finally, the steps constituting the method according to the embodiment may be performed in an appropriate order, unless the order is clearly stated or there is no description to the contrary. The embodiments are not necessarily limited according to the description order of the steps. The use of all examples or exemplary terms (eg, etc.) in the embodiment is merely for describing the embodiment in detail, and unless it is limited by the claims, the scope of the embodiment is limited by the examples or exemplary terminology. it is not In addition, those skilled in the art will appreciate that various modifications, combinations, and changes may be made in accordance with design conditions and factors within the scope of the appended claims or their equivalents.

100, 200, 300, 400, 500, 600: electronic device
110, 210, 310, 410, 510, 610: active layer
120, 220, 320, 420, 520, 620: first electrode part
130, 230, 330, 430, 530, 630: second electrode part
150, 250, 350, 450, 550, 650: first connection electrode
160, 260, 360, 460, 560, 660: second connection electrode

Claims (8)

a first electrode portion containing a conductive material;
a second electrode part spaced apart from the first electrode and containing a conductive material;
disposed between the first electrode portion and the second electrode portion and comprising a spontaneously polarizable material and formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance active layer;
a first connection electrode and a second connection electrode formed on the active layer to be spaced apart from the first electrode part and the second electrode part; and
and an electric field control unit connected to the first electrode unit and the second electrode unit to apply an electric field,
The electric field controller applies a bias voltage to the first electrode part and the second electrode part at least in the second mode,
Electrical characteristics between the first electrode part and the active layer include those formed to be different from the electrical characteristics between the second electrode part and the active layer,
electronic device. According to claim 1,
When the bias voltage is applied, the conduction band energy level and the balance band energy level of the active layer are lowered. According to claim 1,
An electronic device through which a current flows between the first connection electrode and the second connection electrode in the second mode. According to claim 1,
The active layer has different displacements in the first mode and the second mode. For an electronic device comprising: an active layer comprising a spontaneously polarizable material and formed to selectively have a first mode having a first electrical resistance and a second mode having a value lower than the first electrical resistance;
applying an electric field to the active layer so that the active layer has the first mode or the second mode; and
Including; applying a bias voltage to the active layer;
The electric field is spaced apart from each other with the active layer therebetween, and is formed by a first electrode part and a second electrode part formed in contact with the active layer,
When the active layer has at least the second mode, the bias voltage is applied through the first electrode part and the second electrode part,
The conduction band energy level and the balance band energy level of the active layer are lowered by the application of the bias voltage,
Electrical characteristics between the first electrode part and the active layer include those formed to be different from the electrical characteristics between the second electrode part and the active layer,
Electronic device control method. 6. The method of claim 5,
a first connection electrode and a second connection electrode formed on the active layer to be spaced apart from the first electrode part and the second electrode part;
An electronic device control method for controlling the flow of current between the first connection electrode and the second connection electrode by selecting the first mode and the second mode. According to claim 1,
The magnitude of the polarization value after applying and removing the first electric field to the active layer through the electric field controller is,
and a second electric field having the same magnitude and opposite direction to the first electric field to the active layer through the electric field controller and formed to be different from the polarization value after removal of the second electric field. 8. The method of claim 7,
The electrical resistance of the active layer after application and removal of the first electric field is,
and formed to have a value different from an electrical resistance of the active layer after application and removal of the second electric field.

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