KR102408386B1 - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing substrate processing using plasma.
The present invention is a process chamber 100 including a chamber body 110 with an open upper side, and an upper lead 120 coupled to the chamber body 110 to form a sealed processing space (S) and electrically grounded. Wow; a substrate support unit 130 installed in the process chamber 100 to which one or more RF power is applied and for supporting the tray 20 on which one or more substrates 10 are seated; a gas ejection unit 140 installed on the upper side of the processing space (S) to inject gas for substrate processing; A lifting plate part ( 150) and; a vertical moving part 200 installed on the upper side of the process chamber 100 to move the lifting plate part 150 up and down; Disclosed is a substrate processing apparatus comprising one or more energizing members (160) electrically connecting the lifting plate part (150) and the upper lead (120).

Description

Substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing substrate processing using plasma.

The substrate processing apparatus is configured to include a vacuum chamber forming a sealed internal space, a substrate support installed in the vacuum chamber on which the substrate is seated, and a gas injection unit that sprays gas, and applies power while injecting processing gas into the internal space. It refers to a device that etches or deposits the surface of a substrate.

The substrate processed by the substrate processing apparatus includes a semiconductor wafer, a glass substrate for an LCD panel, a solar cell substrate, and the like.

As an example of the substrate processing apparatus, there is a substrate processing apparatus that performs vacuum processing to form fine irregularities on the surface of the substrate after seating the solar cell substrate on the substrate support.

However, in the case of a conventional substrate processing apparatus, it is difficult to configure the gas injection unit with only a single plate because the gas injection unit has to form a gas diffusion space in the middle in order to uniformly spray the gas on the substrate. There is a problem in that it must be configured in a plate structure.

In this case, in the case of the lower plate, since a very large number (10,000 or more) of holes through which the gas is injected must be formed for uniform gas injection, it is difficult to manufacture and the manufacturing cost is high.

In addition, in the conventional substrate processing apparatus, it is common to apply one or more RF power sources such as applying RF power to the substrate support unit and grounding the process chamber and the gas injection unit to perform the process by applying one or more RF power sources to form plasma.

However, in the case of the conventional substrate processing apparatus, since plasma is formed in the space between the substrate support part and the gas injection part, the gas injection part is essentially a corrosion-resistant coating or an oxide film such as anodizing to prevent the gas injection part from being damaged by the plasma. However, this also has a problem of increasing the manufacturing cost of the gas injection unit.

An object of the present invention is to solve the above problems by installing a lifting plate part having a plurality of openings in a grounded state to be movable up and down in a process chamber, and forming plasma only in the space between the lifting plate part and the substrate support part. An object of the present invention is to provide a substrate processing apparatus capable of configuring a gas injection unit with a low-cost and simple structure by performing the process.

The present invention was created to achieve the object of the present invention as described above, and a chamber body 110 having an upper side opened, and coupled to the chamber body 110 to form a closed processing space (S) and electrically a process chamber 100 including a grounded upper lead 120; a substrate support unit 130 installed in the process chamber 100 to which one or more RF power is applied and for supporting the tray 20 on which one or more substrates 10 are seated; a gas ejection unit 140 installed on the upper side of the processing space (S) to inject gas for substrate processing; A lifting plate part ( 150) and; a vertical moving part 200 installed on the upper side of the process chamber 100 to move the lifting plate part 150 up and down; Disclosed is a substrate processing apparatus including at least one conducting member 160 electrically connecting the lifting plate 150 and the upper lead 120 to each other.

The gas injection unit 140 communicates with an external gas supply device for gas supply, and at least one gas inlet 180 passing through the upper lead 120, and the gas inlet 180 communicate with the gas inlet 180 in a horizontal direction. It may include a gas flow path 149 extending along the , and a plurality of gas injection ports 146 communicating with the gas flow path 149 to inject gas into the processing space (S).

The plurality of gas injection holes 146 may be arranged in a plurality of rows on the surface facing the substrate 10 .

The gas injection unit 140 may include a plurality of nozzle units 142 each coupled to the plurality of gas injection holes 146 and in which one or more injection holes 141 for gas injection are formed.

The nozzle unit 142 is coupled to the gas injection port 146 to protrude downward, and a plurality of injection holes 141 for gas injection may be formed along the periphery of the side surface.

The gas injection unit 140 may further include a flow path forming plate 144 coupled to the bottom surface of the upper lead 120 to form the gas flow path 149 together with the bottom surface of the upper lead 120 . can

The gas injection hole 146 may be formed at a position corresponding to the gas flow path 149 among the flow path forming plate 144 .

The flow path forming plate 144 may include a groove 143 for forming the gas flow path 149 on a coupling surface coupled to the upper lead 120 .

The flow path forming plate 144 may include a plurality of sub-plates 144a, 144b, and 144c divided on a plane.

The groove portion 143 may include a plurality of sub-groove portions 143a, 143b, and 143c independently formed in each of the sub-plates 144a, 144b, and 144c.

The plurality of gas injection holes 146 formed in each of the sub-plates 144a, 144b, and 144c may communicate with each other through the corresponding sub-groove portions 143a, 143b, and 143c.

The upper lead 120 may include a groove portion 143 for forming the gas flow path 149 on a bottom surface coupled to the flow path forming plate 144 .

The gas injection unit 140 is coupled to the plurality of gas injection ports 146 formed in the flow path forming plate 144, respectively, and a plurality of nozzle units having one or more injection holes 141 for gas injection ( 142) may be included.

The gas injection unit 140, the gas flow path 149 is formed therein, and at least one flow path forming body 148 coupled to the bottom surface of the upper lid 120 so as to communicate with the gas inlet 180, add can be included as

The gas injection hole 146 may be formed in the flow path forming body 148 at a position corresponding to the gas flow path 149 .

The gas injection unit 140 may include a plurality of flow path forming bodies 128 installed on the bottom surface of the upper lid 120 .

The plurality of gas injection holes 146 may be formed in one or more rows in each flow path forming body 148 .

A concave portion 122 having a shape corresponding to that of the flow passage forming body 148 may be formed on the bottom surface of the upper lid 120 to fit the passage forming body 148 .

An exhaust port 112 for gas exhaust may be formed on one side of the chamber body 110 .

The gas injection unit 140 may be divided into a plurality of gas injection regions for injecting different flow rates of gas per unit time and unit area for each region.

The plurality of gas injection holes 146 may be distributed at a smaller density than other regions in the vicinity of the exhaust port 112 side.

When the direction toward the exhaust port 112 from the other side of the chamber body 110 opposite to the exhaust port 112 is referred to as a first direction, the gas injection unit 140 is disposed in the first direction in plan view. The plurality of gas injection regions may be partitioned along a second direction perpendicular to .

The flow rate of the gas injected per unit time from the gas injection port 146 corresponding to each gas injection area may be smaller toward the exhaust port 112 side.

The number of corresponding gas injection ports 146 per unit area for each gas injection area may be smaller toward the exhaust port 112 side.

The conducting member 160 may be configured in plurality and installed along the edge of the lifting plate part 150 between the lifting plate part 150 and the upper lead 120 .

The conducting member 160 may be a flexible strap that can be bent as the distance between the elevating plate unit 150 and the upper lead 120 is reduced.

The conducting member 160 may have a material capable of bending toward the center of the upper surface of the lifting plate portion 150 as the distance between the lifting plate portion 150 and the upper lead 120 is reduced.

The conducting member 160 may be disposed between the plurality of gas outlets 146 so as not to vertically overlap the plurality of gas outlets 146 when the conducting member 160 is bent.

The lifting plate 150 may have a rectangular planar shape.

The conducting member 160 is spaced larger than the rest of the region in the region corresponding to the vertex of the lifting plate unit 150 in order to prevent interference with the adjacent conducting member 160 when the conducting member 160 is bent. can be placed as

The conducting member 160 is the conducting member (160) disposed closest to the rectangular vertex of the lifting plate part 150 in order to prevent interference with the adjacent conducting member 160 when the conducting member 160 is bent. 160 may be disposed to form an inclination with the edge of the lifting plate 150 .

The substrate processing apparatus may perform a reactive ion etching process.

The substrate processing apparatus according to the present invention is installed in a process chamber to be movable up and down in a grounded state of a lifting plate portion having a plurality of injection holes formed therein, and forming plasma only in the space between the lifting plate portion and the substrate support portion to perform the process. There is an advantage that the injection unit can be configured with a simple structure at a low cost.

Specifically, in the substrate processing apparatus according to the present invention, since the elevating plate unit is installed to be elevating and lowering, by lowering the elevating plate unit, it is possible to secure a gap sufficient for gas diffusion to occur between the gas injection unit and the elevating plate unit. Therefore, there is no need to configure the gas injection unit as a double plate structure in which a large number of holes are formed in order to form a diffusion space in the gas injection unit, and by configuring the gas injection unit as a simple nozzle type, the manufacturing cost is reduced by securing the ease of manufacture. There are significant savings.

In addition, in the substrate processing apparatus according to the present invention, since the lifting plate part is electrically grounded, plasma is formed only between the lifting plate part and the substrate support part, so that the gas injection part is not affected by plasma, so a separate coating or anodizing treatment on the gas injection part The advantage is that there is no need to

In addition, in the substrate processing apparatus according to the present invention, by electrically grounding the lifting plate unit, plasma is formed only in the space between the lifting plate unit and the substrate support unit, and thus stable and uniform substrate processing is performed even when power of a relatively small output is applied. This is possible and has the advantage of greatly improving the process efficiency.

At this time, the substrate processing apparatus according to the present invention electrically connects the elevating plate part and the process chamber (upper lead) through a flexible conductive strap, thereby maintaining the grounding state despite the vertical movement of the elevating plate part in the process chamber. It has the advantage of being stable.

In addition, the substrate processing apparatus according to the present invention has an advantage in that it is possible to adjust the height or size of the plasma according to the process conditions by installing the lifting plate part to be movable up and down, thereby providing an optimal process atmosphere and enabling good substrate processing. .

1A and 1B are cross-sectional views illustrating a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention.
FIG. 3 is a perspective view showing a vertical moving part of the substrate processing apparatus of FIGS. 1A to 2 .
FIG. 4 is a cross-sectional view in the I-I direction of FIG. 3 .
FIG. 5 is a perspective view illustrating a modified example of a vertical moving part of the substrate processing apparatus of FIGS. 1A to 2 .
FIG. 6 is a plan view showing the vertical eastern part of FIG. 3 .
7 is a perspective view showing a part of the configuration of the vertical moving part according to the first embodiment of the present invention.
8A is a perspective view showing a vertical moving part according to a second embodiment of the present invention by enlarging part A of FIG. 3 .
Fig. 8B is an exploded perspective view of Fig. 8A.
Fig. 9 is a sectional view in the II-II direction of Fig. 8A.
Fig. 10 is a cross-sectional view in the III-III direction of Fig. 8A.
11 is an enlarged perspective view showing an enlarged part of the configuration of the vertical moving part according to the third embodiment of the present invention.
Fig. 12 is an exploded perspective view of Fig. 11 .
13 is an enlarged front view showing a part of the vertical eastern part according to the third embodiment of the present invention.
14 is an enlarged view showing an enlarged portion B of FIG. 4 .
15 is a plan view showing a part of the configuration of FIG. 14 .
16 is a bottom view showing a gas ejection unit in the substrate processing apparatus of FIGS. 1A to 2 .
17A is a cross-sectional view in the IV-IV direction of FIG. 16 , and FIG. 17B is a cross-sectional view in the V-V direction in FIG. 16 .
18 is a plan view showing a gas supply line of the gas injection unit of FIGS. 17A to 17B.
19 is a cross-sectional view showing a gas injection unit in the substrate processing apparatus of FIGS. 1A to 2 ;
FIG. 20 is a cross-sectional view in the VI-VI direction of FIG. 19 .

Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings.

The substrate processing apparatus according to the present invention, as shown in FIGS. 1A to 20 , includes a chamber body 110 having an open upper side, and is coupled to the chamber body 110 to form a sealed processing space (S) and electrically a process chamber 100 including an upper lead 120 grounded to a substrate support unit 130 installed in the process chamber 100 to which one or more RF power is applied and to support the tray 20 on which one or more substrates 10 are seated; a gas ejection unit 140 installed on the upper side of the processing space (S) to inject gas for performing substrate processing; The elevating plate unit 150 is installed to be movable up and down between the substrate support unit 130 and the gas injection unit 140 and has a plurality of openings 152 through which the gas injected by the gas injection unit 140 passes; ; a vertical movement unit 200 installed on the upper side of the process chamber 100 to vertically move the lifting plate unit 150; At least one energizing member 160 for electrically connecting the lifting plate 150 and the upper lead 120 is included.

Here, the substrate 10, which is the target of the substrate treatment, may be any substrate as long as it is a substrate that needs to be subjected to a substrate treatment process such as deposition and etching. Substrates for solar cells such as monocrystalline silicon and polycrystalline silicon that are necessary are also possible.

The tray 20 is a configuration for transferring one or more substrates 10 , in particular, a plurality of substrates 10 , and the material and shape thereof may be variously configured according to the type of the substrate 10 and the vacuum processing process. Here, the tray 20 is made of a material that is strong against plasma, such as borosilicate glass (pyrex). As a configuration for transferring the substrates 10 in a state in which the substrates 10 are seated, the substrate 10 is a substrate to be described later. Of course, when seated directly on the support 130, it is not essential.

The process chamber 100 is a configuration for forming a sealed inner space for substrate processing, and various configurations are possible depending on the substrate processing process. As shown in FIG. 1 , the upper side is opened and one or more gates are The formed chamber body 110 and the chamber body 110 may be configured to include an upper lid 120 that is detachably coupled to each other to form a processing space (S). Here, the substrate processing process performed by the substrate processing apparatus according to the present invention is typically an etching process, and in particular, a reactive ion etching (RIE) process.

At this time, at least one of the chamber body 110 and the upper lead 120 of the process chamber 100 is electrically grounded, and preferably, the upper lead 120 is grounded.

One or more exhaust ports 112 for discharging gas may be formed in the chamber body 110 .

The exhaust port 112 may be formed in a lower portion of the chamber body 110 , in particular, one lower side or lower surface.

In addition, one or more gates 111 for entering and exiting the substrate 10 may be formed on one side of the chamber body 110 . In this case, the gate 111 and the exhaust port 112 may be formed on opposite sides of the chamber body 110 .

And in the process chamber 100, the gas injection unit 140 and the substrate 10 that receive the supply from the gas supply device (not shown) and inject the process gas into the inner space (S) is seated through the tray (20) Devices for performing the vacuum treatment process, such as the substrate support 130 , an exhaust system for pressure control and exhaust in the internal space S are installed.

The substrate support unit 130 is a configuration for supporting the tray 20 on which one or more RF power is applied and one or more substrates 10 are seated, and various configurations are possible.

As an example, as shown in FIGS. 1A to 1B , the substrate support unit 130 may be fixedly installed in an electrically insulated state from the process chamber 100 .

The substrate support unit 130 may be coupled to the chamber body 110 in various structures, for example, may be coupled to the process chamber 100 from the lower side of the chamber body 110 to the upper side.

At this time, the substrate support unit 130 needs to be electrically insulated from the chamber body 110 , and at least one insulating member (not shown) having an insulating material between the coupling surfaces of the chamber body 110 and the substrate support unit 130 . city) is preferably installed.

And in the coupling portion between the chamber body 110 and the substrate support 130, one or more sealing members may be installed in order to keep the internal space (S) in a sealed state isolated from the outside.

As another example, as shown in FIG. 2 , the substrate support unit 130 may be vertically movable in the process chamber 100 while one or more RF power is applied.

The substrate support unit 130 may maintain an electrically insulated state from the process chamber 100 .

The substrate support unit 130 may be coupled to the chamber body 110 in various ways and structures if it is movable up and down within the process chamber 100 .

At this time, the substrate processing apparatus penetrates the lower portion of the chamber body 110 and moves the elevating shaft 132 coupled to the substrate support unit 130 up and down, thereby driving the substrate support unit 130 in vertical motion. (not shown) may be included.

The elevating shaft 132 is a configuration for elevating and lowering the substrate supporting unit 130 while supporting the substrate supporting unit 130 , and is symmetrically formed for stable support and horizontal maintenance of the substrate supporting unit 130 . It is preferable to be provided.

On the other hand, the substrate support unit 130, one or more lift pins for moving the tray 20 up and down to enable the introduction or discharge of the tray 20 by a transfer robot (not shown) to be installed so as to be movable up and down. can

The substrate up-down driving unit (not shown) may include a pressure cylinder using hydraulic pressure, pneumatic pressure, or the like as a driving force, but is not limited thereto.

On the other hand, in the substrate support unit 130, one or more lift pins (not shown) for moving the tray 20 up and down so that the tray 20 can be introduced or discharged by a transfer robot (not shown) moves up and down. can be installed to make it possible.

The gas injection unit 140 is installed on the upper side of the processing space S, is configured to inject gas for performing substrate processing, and may have various structures according to the type and number of the injected gas.

The gas injection unit 140 is preferably installed on the upper lead 120 and electrically grounded together with the upper lead 120 .

The lifting plate part 150 can have various configurations depending on the purpose of use, and as shown in FIGS. 1A to 4 , a plurality of openings 152 are formed to allow gas to pass through the plate 151 . can be configured.

The opening 152 may be formed in various patterns and sizes so that the gas injected from the gas injection unit 140 is processed on the upper surface of the substrate 10 .

On the other hand, the lifting plate unit 150 removes the residue material from which the surface of the substrate 10 is etched by plasma formed in the space between the tray 20 on which the substrate 10 is seated. ) and the residue is attached to the surface of the substrate 10 to form fine irregularities, which is an example of a case where it is used for a predetermined purpose.

At this time, the distance between the lifting plate 150 and the tray 20 is preferably maintained at 5 mm-30 mm in consideration of the effect of confining the residue and the rate of formation of irregularities by the residue.

In addition, various materials may be used for the elevating plate unit 150 according to a substrate processing process, and a material resistant to plasma is preferably used, and may have a material of aluminum or an alloy thereof.

On the other hand, in the substrate processing apparatus according to the present invention, as shown in FIGS. 1A to 2 , the lifting plate part 150 installed in the processing space S when the tray 20 is introduced into or discharged from the process chamber 100 . In order to prevent interference with and to change the plasma region, a vertical movement unit 200 for vertically moving the lifting plate unit 150 may be additionally included.

1A and 1B show exaggerated vertical movement of the elevating plate unit 150 for convenience of explanation.

The vertical movement unit 200 may have various configurations by moving the lifting plate unit 150 vertically with respect to the process chamber 100 .

For example, the vertical movement unit 200 includes one or more lifting shafts 210 coupled to the upper surface of the lifting plate unit 150 and penetrating the upper lid 120 of the process chamber 100; It is installed on the upper side of the upper lid 120 and may include a vertical drive unit 230 for driving the vertical movement of the lifting shaft 210 .

The elevating shaft 210 is coupled to the upper surface of the elevating plate unit 150 and moves up and down so that the elevating plate unit 150 moves up and down, and various configurations are possible.

The vertical drive unit 230 is configured to drive the vertical movement of the lifting shaft 210, and various configurations are possible.

The vertical drive unit 230 may be coupled to the lifting shaft 210 above the upper lid 120 , that is, outside the processing space S.

For example, the vertical drive unit 230 may apply various driving systems if it can linearly move the shaft connection unit 220 in the vertical direction. For example, the vertical drive unit 230 uses hydraulic pressure, pneumatic pressure, etc. It may be a pressure cylinder, but is not limited thereto.

For example, the vertical moving unit 200 may include a plurality of lifting shafts 210 .

In this case, the vertical movement unit 200 may further include a shaft connection unit 220 coupled to the plurality of lifting shafts 210 at the upper side of the process chamber 100 .

The shaft connection unit 220 is configured to connect between one or more elevating shafts 210, and various configurations are possible.

For example, the shaft connection part 220 may include a main shaft connection part 222 coupled to the vertical drive part 230; For connection between the vertical drive unit 230 and the plurality of lifting shafts 210 , a sub-shaft connecting unit 224 branched from the main shaft connecting unit 222 and coupled to the lifting shaft 210 may be included.

As shown in FIG. 3 , the main shaft connection part 222 is configured to couple a plurality of lifting shafts 210 to one vertical driving part 230 , and various configurations are possible.

For example, the main shaft connection part 222 may be a rod coupled to the vertical driving part 230 and having an X-axis direction perpendicular to the vertical direction (Z direction) as a longitudinal direction.

The sub-shaft connection part 224 is branched from the main shaft connection part 222 for connection between the vertical drive part 230 and the elevation shaft 210 and is coupled with the elevation shaft 210, and various configurations are possible.

For example, when the main shaft connection part 222 is a rod having an X-axis direction perpendicular to the vertical direction (Z direction) as a longitudinal direction, the sub-shaft connection part 224 includes the lifting shaft 210 and the main shaft. It may be a rod having a Y-axis direction connecting between the shaft connection parts 22 as a longitudinal direction.

At this time, it is preferable that the sub-shaft connection part 224 is symmetrically branched with respect to the main shaft connection part 222 and is coupled to a pair of lifting shafts 210 at both branched ends.

The sub-shaft connection part 224 may be coupled to the elevating shaft 210 through the bolting member 300, but is not limited thereto.

The shaft connection unit 220 may synchronize the vertical movement of the lifting shaft 210 by being respectively coupled to one vertical driving unit 230 and a plurality of lifting shafts 210 .

Meanwhile, as shown in FIG. 5 , the vertical moving unit 200 may include a plurality of vertical moving units 230a and 230b.

Specifically, the vertical movement unit 200 includes a central driving unit 230a for driving the vertical movement of the lifting shaft 210 corresponding to the upper surface central portion of the lifting plate unit 150; It may include an outer driving unit 230b for driving the vertical movement of the lifting shaft 210 corresponding to the upper outer portion of the lifting plate unit 150 .

At this time, the shaft connection part 220 includes a central shaft connection part 220a connecting between the elevation shafts 210 corresponding to the center of the upper surface of the elevation plate part 150; It may include an outer shaft connecting portion 220b connecting between the lifting shafts 210 corresponding to the upper outer portion of the lifting plate portion 150 .

In this case, the central shaft connection part 220a may be composed of a main shaft connection part 222a and a subshaft connection part 224a.

Likewise, it goes without saying that the outer shaft connecting portion 220b may include a main shaft connecting portion 222b and a subshaft connecting portion 224b.

The central driving part 230a may drive the vertical movement of the lifting shaft 210 corresponding to the central part through the central shaft connecting part 220a.

Similarly, the outer drive unit 230b may drive the vertical movement of the lifting shaft 210 corresponding to the outer portion through the outer shaft connection unit 220b.

In the present invention, by including a plurality of vertical drive units 230, there can be a difference in the degree of elevation of the central part and the outer part of the elevation plate part 150, so that the sagging phenomenon caused by its own weight in the central part of the elevation plate part 150 can be eliminated. can be prevented

Meanwhile, the vertical movement unit 200 may further include a guide portion 240 for guiding the vertical movement of the lifting shaft 210 as shown in FIGS. 8 to 10 .

The guide unit 240 includes a pair of guide rods 242 installed on both sides of the lifting shaft 210 in the vertical direction in the vertical direction; It is coupled with the lifting shaft 210 and moves in the vertical direction together with the lifting shaft 210, and includes a guide moving member 244 in which a pair of through-holes into which a pair of guide rods 242 are relatively movably inserted are formed. can do.

The guide part 240 may be installed between the lower structure 252 and the upper structure 254 on the upper side of the upper lid 200 as shown in FIGS. 8 to 10 .

At this time, the guide moving member 244 may be coupled to each of the lifting shaft 210 and the shaft connecting portion 220 and the bolting member 300 between the lifting shaft 210 and the shaft connecting portion 220, but this It is not limited.

On the other hand, the lifting shaft 210 is fixedly coupled to the upper surface of the lifting plate unit 150 located inside the processing space (S), the shaft connecting member 220 and the vertical drive unit 230 is the processing space (S) Since it is located outside, when deformation of the upper lead 120 (horizontal expansion/contraction or vertical bending, etc.) occurs due to changes in its own weight, heat, etc., as shown in FIG. 6, the upper lead 120 A horizontal position change (arrow direction) of the elevating shaft 210 centered on the center (M) of the may occur.

The horizontal position change of the lifting shaft 210 may cause damage such as abrasion or friction due to stress in the coupling portion between the lifting shaft 210 , the guide part 240 , and the shaft connection part 220 .

Accordingly, it is preferable that the lifting shaft 210 is coupled to the shaft connection part 220 so as to be movable relatively horizontally with respect to the shaft connection part 220 .

In order for the lifting shaft 210 to be coupled to be relatively horizontally movable, as shown in FIG. 5 , at least one of the first coupling portion C1 and the second coupling portion C2 is horizontal between the coupled members. It needs to be coupled to be movable linearly in the direction.

The first coupling part (C1) means a coupling part between the main shaft connection part 222 and the subshaft connection part 224, and the second coupling part C2 is the subshaft connection part 224 and the lifting shaft ( 210) may mean a binding site between them.

Hereinafter, the vertical movement unit 200 according to the first embodiment of the present invention will be described in detail with reference to FIG. 7 .

Here, in FIG. 7 , the guide part 240 and the upper structure 254 and the lower structure 252 in which the guide part 240 are installed are omitted from the drawing.

In the first embodiment, the sub-shaft connection part 224 and the lifting shaft 210 can move relative to each other in the horizontal direction through two linear guide parts for guiding movement in a direction orthogonal to each other in the second coupling part C2. can be tightly coupled.

Specifically, the vertical moving part 200 is installed between the lifting shaft 210 and the shaft connection part 220, and the lifting shaft 210 is moved in a plane with respect to the shaft connection part 220 in a first direction. A first linear guide part 252 that enables movement, and is installed between the first linear guide part 262 and the lifting shaft 210 to move the lifting shaft 210 to the first linear guide part 252 It may include one or more second linear guide parts 264 to be movable in a second direction perpendicular to the first direction on the plane.

Here, the first linear guide unit 262 and the second linear guide unit 264 may be configured as an LM guide for linear movement, but is not limited thereto.

The first linear guide part 262 is installed between the sub-shaft connection part 224 of the elevation shaft 210 and the shaft connection part 220, as shown in FIG. Various configurations are possible with a configuration that allows movement in the first direction (Y-axis direction).

Specifically, the first linear guide part 262 includes a moving member 262a that is fixedly coupled to the lifting shaft 210 and moves linearly; It may include a fixing member 262b coupled to the movable member 262a and the guide groove G to be relatively movable and fixedly coupled to the sub-shaft connection part 224 .

The guide groove (G) is a guide for the moving member 262a formed to enable the lifting shaft 210 to move in the first direction (Y-axis direction), in a first direction (Y-axis direction) in plan view. Various shapes are possible if formed with

The second linear guide part 264 is installed between the first linear guide part 262 and the shaft connection part 220 to move the first linear guide part 262 in a second direction perpendicular to the first direction on a planar view. Various configurations are possible with the movable configuration.

Specifically, the second linear guide part 264 includes a moving member 264a that is fixedly coupled to the first linear guide part 262 and moves linearly; It may include a fixing member 262b coupled to the movable member 262b to be relatively movable through the guide groove G and fixedly coupled to the sub-shaft connection part 224 of the shaft connection part 220 .

The guide groove G is a guide for the moving member 264a formed to make the first linear guide part 262 movable in the second direction (X-axis direction), and is a guide for the first linear guide part 262 in the first direction (Y) in plan view. If it is formed in the second direction (X-axis direction) perpendicular to the axial direction), various shapes are possible.

The vertical moving part 200 according to the first embodiment includes two linear guide parts 252 and 254 that are linearly movable in a direction orthogonal to each other between the sub-shaft connection part 224 of the shaft connection part 220 and the lifting shaft 210 . ), by installing the vertical stacking method, the lifting shaft 210 can be installed to be movable relative to the sub-shaft connection part 224 in the horizontal direction.

On the other hand, the vertical moving part 200 according to the first embodiment is equally applicable even when the guide part 240 is installed between the sub-shaft connection part 224 and the elevating shaft 210 .

For example, the first linear guide part 262 and the second linear guide part 264 are between the sub-shaft connection part 224 and the guide part 240 or between the guide part 240 and the elevating shaft 210 . can be installed on

As another example, the first linear guide part 262 is between the guide part 240 and the elevating shaft 210 , and the second linear guide part 264 is the guide part 240 and the sub-shaft connection part 224 . ) can be installed between each

Hereinafter, the vertical moving unit 200 according to the second embodiment of the present invention will be described in detail with reference to FIGS. 8 to 10 .

In the second embodiment, the sub-shaft connecting portion 224 and the lifting shaft 210 may be coupled to be movable relative to each other in the horizontal direction using one or more bolting members 300 at the second coupling portion C2. .

That is, the vertical movement unit 200 according to the second embodiment, unlike the first embodiment, uses the bolting member 300 for coupling each member instead of the linear module for linear movement to connect the lifting shaft 210 to the shaft connection part. It can be coupled with the shaft connection unit 220 to be movable relative to the horizontal (220).

Specifically, the vertical moving part 200 according to the second embodiment, as shown in FIGS. 9 and 10, instead of the first linear guide part 262 and the second linear guide part 264, the sub-shaft connection part ( It is fixedly coupled to the lifting shaft 210 through a through hole formed in 224 , and may include one or more bolting members 300 for coupling the lifting shaft 210 and the shaft connection unit 220 .

At this time, it is preferable that the through hole has a diameter (D) larger than the outer diameter (d) of the bolting member 300 in the through hole.

Accordingly, the bolting member 300 has a degree of freedom in horizontal movement within the diameter D of the through hole and can be moved together with the lifting shaft 210 without friction with the shaft connection part 220 .

The shape of the through hole may be variously formed, such as a circular shape, an oval shape, or a slot shape, depending on the deformation direction and the degree of deformation of the upper lead 120 .

On the other hand, as shown in FIGS. 8 to 10 , when the vertical moving unit 200 further includes a guide unit 240 , the vertical moving unit 200 includes a sub-shaft connection part 224 and a guide moving member. At least one first bolting member (300a) for coupling (244) and; It is preferable to include at least one second bolting member (300b) coupling the guide moving member (244) and the lifting shaft (210).

The first bolting member 300a may be fixedly coupled to the guide moving member 244 through a through hole formed in the sub-shaft connection part 224 .

In this case, the diameter (D) of the through hole may be formed to be larger than the outer diameter (d) of the bolting member 300 in the through hole.

Accordingly, the first bolting member 300a has a degree of freedom in the horizontal direction and can be moved together with the guide moving member 244 .

The second bolting member 300b may be fixedly coupled to the lifting shaft 210 through a through hole formed in the guide moving member 244 .

In this case, the diameter (D) of the through hole may be formed to be larger than the outer diameter (d) of the bolting member 300 in the through hole.

Accordingly, the second bolting member 300b has a degree of freedom in the horizontal direction and can be moved together with the lifting shaft 210 .

Hereinafter, the vertical drive unit 200 according to the third embodiment of the present invention will be described in detail with reference to FIGS. 11 to 13 .

In the third embodiment, the sub-shaft connection part 224 and the lifting shaft 210 may be coupled to be movable relative to each other in the horizontal direction at the first coupling part C1 and the second coupling part C2, respectively.

Specifically, the vertical moving part 200 is installed between the main shaft connection part 222 and the sub-shaft connection part 224, and the sub-shaft connection part 224 is connected to the main shaft connection part 222 in a planar view. At least one third linear guide part 266 that enables movement in the first direction, and is installed between the sub-shaft connection part 224 and the elevating shaft 210 to connect the Seunggyang shaft 210 to the sub-shaft connection part ( 224) may include one or more fourth linear guide portions 268 that are movable in a second direction perpendicular to the first direction on the plane.

Here, the third linear guide unit 266 and the second linear guide unit 268 may be configured as an LM guide for linear movement, but is not limited thereto.

Specifically, the third linear guide portion 266, as shown in Figure 11, the sub-shaft connecting portion 224 and fixed coupling with a moving member (266a) to move linearly; It may include a fixing member 266b coupled to the movable member 266a and the guide groove G to be relatively movable and fixedly coupled to the main shaft connection part 222 .

The guide groove (G) is a guide for the moving member (266a) formed to make the sub-shaft connection part 224 movable in the first direction (X-axis direction), and if it is formed in the first direction on a plane, various shape is possible.

At this time, it is preferable that the guide groove (G) is formed so that the first direction is parallel to the longitudinal direction (X-axis direction) of the main shaft connection part 222 .

Similarly, the fourth linear guide portion 268, as shown in Fig. 13, the lifting shaft 210 and fixedly coupled to the moving member 268a to move linearly; It may include a fixing member 268b coupled to the moving member 268a and the guide groove G to be relatively movable and fixedly coupled to the sub-shaft connection part 224 .

The guide groove (G) is a guide for the moving member (268a) formed to move the lifting shaft 210 in the second direction (Y-axis direction) perpendicular to the first direction (X-axis direction), the plane If it is formed in the upper second direction (Y-axis direction), various shapes are possible.

On the other hand, in the present invention, through the combination of the above-mentioned linear guide part and the bolting member 300, the lifting shaft 210 can be coupled with the shaft connection part 220 so as to be movable relative to the shaft connection part 220 horizontally. Of course.

In other words, in the third embodiment described above, the vertical moving part 200 is fixedly coupled to the lifting shaft 210 through a through hole formed in the sub-shaft connection part 224 instead of the fourth linear guide part 268, , may include one or more bolting members 300 for coupling the lifting shaft 210 and the sub-shaft connection part 224 .

At this time, the bolting member 300, like the above-described embodiments, at this time, the diameter (D) of the through hole, the through hole may be formed to be larger than the outer diameter (d) of the bolting member (300).

In addition, when the vertical movement part 200 further includes the guide part 240 , as in the second embodiment, the vertical movement part 200 may include two bolting members 300a and 300b .

The conducting member 160 is made of a conductive material, and various configurations are possible by electrically connecting the elevating plate unit 150 and the upper lead 120 so that the elevating plate unit 150 is grounded.

The conducting member 160 is configured in plurality and may be installed along a side portion between the lifting plate portion 150 and the upper lead 120 .

In addition, as shown in FIG. 14 , in the energizing member 160 , as the distance between the lifting plate part 150 and the upper lead 120 is reduced by the upward movement of the lifting plate part 150 , the lifting plate It may be composed of a flexible strap having a material that can be bent toward the center of the upper surface of the part 150 .

Since the conducting member 160 is composed of a flexible strap, the electrical connection between the elevating plate unit 150 and the upper lead 120 can be maintained even though the elevating plate unit 150 moves up and down. There is this.

At this time, as shown in FIG. 15 , the conducting member 160 is preferably disposed so as not to interfere with the neighboring conducting member 160 when it is bent toward the center of the upper surface of the lifting plate unit 150 .

For example, the conducting member 160 is configured in plurality, and in order to prevent the conducting member 160 from interfering with the adjacent conducting member 160 when it is bent, an area corresponding to the vertex of the lifting plate unit 150 . The interval K2 in ? may be disposed to be larger than the interval K1 in the remaining region.

As another example, the conducting member 160 is composed of a plurality, and in order to prevent the conducting member 160 from interfering with the adjacent conducting member 160 when it is bent, it is closest to the rectangular vertex of the lifting plate unit 150 . The conducting member 160 disposed close may be disposed to form an inclination θ with the edge of the lifting plate 150 .

In addition, the conducting member 160 includes a plurality of gas outlets 146 or nozzles so as not to overlap with a plurality of gas outlets 146 or nozzle units 142 to be described later when the conducting member 160 is bent. It is preferably disposed between the parts 142 .

Meanwhile, one end of the conducting member 160 may be coupled to the edge of the upper surface of the lifting plate unit 150 by the conducting member coupling unit 154 .

The conducting member coupling unit 154 opens an area corresponding to the opening 152 formed in the elevating plate unit 150 to couple the plurality of conducting members 160 to the elevating plate unit 150 at a time, and is lifted and lowered. It may be composed of a rectangular frame member installed on the edge of the upper surface of the plate unit 150 .

The conducting member coupling portion 154, in this case, the frame member, may be formed integrally or by coupling a plurality of members.

The frame member includes the energizing member 160 interposed between the frame member and the upper surface of the elevating plate unit 150, and the conducting member 160 is connected to the elevating plate unit 150 by a fastening member 155 such as a bolt. can be installed on the edge of

The substrate processing apparatus according to the present invention can induce plasma to be formed only in the space between the tray 20 and the elevation plate part 150 by grounding the elevation plate part 150 through the upper lead 120, and As a result, there is an advantage that substrate processing can be performed even by applying a power supply with a small output.

In addition, as the output of the applied voltage is reduced, the possibility of arcing is low, and thus the possibility of defective substrate processing can be significantly reduced.

That is, when the lifting plate unit 150 is electrically grounded, plasma is substantially formed only between the lifting plate unit 150 and the substrate support unit 130, thereby maximizing the substrate processing effect by reducing power consumption required for substrate processing. It is assumed that it is possible

In addition, in the substrate processing apparatus according to the present invention, at least one of the size and height of the plasma region formed between the lifting plate unit 150 and the substrate support unit 130 is variable by adjusting the vertical height of the lifting plate unit 150 . There are advantages to being able to

Here, the region between the lifting plate 150 and the substrate support 130 may be defined as a plasma region in which plasma is formed. At this time, the lower surface of the lifting plate 150 may form an upper boundary of the plasma region, and the upper surface of the substrate support 130 may form a lower boundary of the plasma region.

At this time, the interval between the lower surface (upper boundary) of the lifting plate unit 150 and the upper surface (lower boundary) of the substrate support unit 130 is defined as the size of the plasma region, and the 'mask 150' on the lower surface of the chamber body 110 ) and the upper surface (lower boundary) center line of the substrate support 130 may be defined as the height of the plasma region.

That is, according to the present invention, an optimized plasma region can be formed according to the type of process or process atmosphere performed in the substrate processing apparatus, so that better substrate processing is possible. This may be more useful because the plasma region can be varied to be optimized for each process when the substrate processing apparatus sequentially performs two or more processes.

On the other hand, in the case of the substrate processing apparatus according to the present invention, since the elevating plate unit 150 is installed to be movable up and down, the gas injection unit 140 and the elevating plate unit 150 are lowered by lowering the elevating plate unit 150 during the process. ), there is no need for the gas injection unit 140 to have a dual structure of an inner plate and an outer plate to form a diffusion space.

That is, the gas injection unit 140 according to the present invention may be composed of only a simple gas flow path 149 and a gas injection port 146 omitting the diffusion space.

Specifically, the gas injection unit 140 communicates with an external gas supply device for gas supply, and at least one gas inlet 180 passing through the upper lead 120, and the gas inlet 180 are in communication with the horizontal It may include a gas flow path 149 extending along the direction, and a plurality of gas injection ports 146 communicating with the gas flow path 149 to inject gas into the processing space (S).

The gas supply device (not shown) is a device for supplying gas in communication with the gas injection unit 140 , and various configurations are possible.

The gas inlet 180 communicates with the gas supply device through the gas supply line 190 and may be formed through the upper lead 120 to supply gas to the processing space S.

In this case, the gas injection unit 140 may include a plurality of gas inlets 180 that are variously arranged for gas supply efficiency, and the plurality of gas inlets 180 include one or more gas supply lines 190 and can be connected

The gas supply line 190 receives gas from a gas supply device (not shown) outside the process chamber 100 , and the flow rate may be controlled by a mass flow controller (MFC).

When the substrate processing apparatus includes a plurality of gas supply lines 192 and 194 , the flow rates of each of the gas supply lines 192 and 194 may be controlled independently of each other.

The gas supply line 190 may be branched into a plurality of branch lines at least once or more in order to communicate with the plurality of gas inlets 180 . A gas inlet 180 may be coupled to the end of the branch line.

For example, in the substrate processing apparatus according to the present invention, a first gas supply line 192 and a second gas supply line which communicate with the six gas inlets 180a to 180f passing through the upper lead 120 and the gas supply apparatus. (194) may be included.

The first gas supply line 192 is branched into two branch lines once and is coupled to the two gas inlets 180a and 180b, and the second gas supply line 194 has four branch lines twice. It may be branched and coupled to the four gas inlets 180c, 180d, 180e, and 180f.

Although not shown, of course, it is also possible that a single gas supply line 190 is branched into eight branch lines and coupled to each gas inlet 180a to 180f.

The gas flow path 149 communicates with the gas inlet 180 and extends in the horizontal direction to guide the supplied gas to a gas outlet 146 to be described later, and various configurations are possible.

The gas flow path 149, as shown in FIG. 18, is branched at least once or has various shapes and can be of any size.

In the case of FIG. 18 , an example in which the gas flow path 149 is formed in a planar mesh or grid pattern is illustrated, but this is only an example, and the shape of the gas flow path 149 is not limited thereto.

The gas injection hole 146 is a through hole that communicates with the gas flow path 149 to inject gas into the processing space S, and may be configured in various shapes and sizes.

The gas injection hole 146 may be a through hole formed at a position corresponding to the gas flow path 149 of the gas injection unit 140, and may be uniformly arranged on a plane at equal intervals or may be arranged at different intervals for each area. , may be arranged in various forms, such as arranged along a closed loop or arranged along a linear line.

For example, the gas injection holes 146 may be arranged in a plurality of rows on the bottom surface of the gas injection unit 140 .

Specifically, as shown in FIG. 16 , the plurality of nozzle units 142 may be arranged in six columns along a row direction (X-axis direction) perpendicular to a column direction (Y-axis direction).

In this case, the gas injection unit 140 may include a plurality of nozzle units 142 each coupled to the plurality of gas injection holes 146 and having one or more injection holes 141 for gas injection formed therein.

The nozzle unit 142 is coupled to the gas injection port 146 to change the intensity and injection direction of the gas flow injected through the gas injection port 146 or to pass the gas passing through the gas injection port 146 into a plurality of thin stems. Various shapes are possible with the configuration for spraying with

For example, the nozzle unit 142 may be coupled to the gas injection hole 146 to protrude downward, and a plurality of injection holes 141 for gas injection may be formed along the periphery of the side surface.

By forming the injection hole 141 along the periphery of the side of the nozzle unit 142, the gas can be injected laterally, and accordingly, the gas can be evenly distributed without being biased in a specific area on the upper part of the substrate 10. There is an advantage that uniform substrate processing is possible.

The plurality of injection holes 141 may be formed along the circumference of the side surface of the nozzle unit 142 at equal intervals, but are not limited thereto.

And, of course, the injection hole 141 may be formed to be parallel to or inclined to the horizontal plane in order to inject the gas parallel to the horizontal plane or to inject the gas at an inclination to the horizontal plane.

The nozzle unit 142 may be formed in a prismatic shape corresponding to the number of injection holes 141 formed in the nozzle unit 142, but is not limited thereto.

As an embodiment of the gas injection unit 140 , the gas injection unit 140 is coupled to the bottom surface of the upper lid 120 as shown in FIGS. 16 to 18 , and the bottom surface of the upper lid 120 . It may include a flow path forming plate 144 for forming a gas flow path 149 together with.

In this case, the gas injection hole 146 may be formed at a position corresponding to the gas flow path 149 of the flow path forming plate 144 .

For example, the flow path forming plate 144 may include a groove portion 143 for forming the gas flow path 149 on the coupling surface coupled to the upper lead 120 .

Although not shown, as another example, the upper lead 120 may include a groove 143 for forming the gas flow path 149 on the bottom surface coupled to the flow path forming plate 144 . In this case, the flow path forming plate 144 may be formed of a flat plate in which a groove is not formed on the coupling surface.

In this case, the plurality of nozzle units 142 may be coupled to the flow path forming plate 144 through the gas injection hole 146 formed in the flow path forming plate 144 .

The groove portion 143 may be formed in various sizes, shapes, and patterns as long as it does not interfere with other structures of the substrate processing apparatus (eg, the lifting shaft 210 passing through the upper lead 120 ).

The groove portion 143 is a groove formed to a preset depth in at least one of "a coupling surface coupled to the upper lead 120 of the flow path forming plate 144" and "the bottom surface of the upper lead 120". A gas flow path 149 through which gas flows may be formed by coupling the lead 120 and the flow path forming plate 144 .

On the surface of the flow path forming plate 144 to which the nozzle unit 142 is coupled (the opposite side to the coupling surface with the upper lead 120 ), a step portion protruding downward along the edge of the nozzle units 142 arranged in each row. (147) may be formed.

By securing the thickness at which the coupling end of the nozzle part 142 can be coupled to the gas injection port 146 while minimizing the overall weight of the flow path forming plate 144 by the step part 147, the nozzle part 142 is gas It may be stably coupled to the injection hole 146 .

Meanwhile, the flow path forming plate 144 may include a plurality of sub-plates 144a, 144b, and 144c divided on a plane.

Of course, the plurality of sub-plates 144a, 144b, and 144c may be divided into various shapes and sizes in consideration of installation convenience and manufacturing cost.

For example, the flow path forming plate 144 may include a plurality of sub-plates 144a, 144b, and 144c divided in a column direction (Y-axis direction).

For example, the plurality of sub-plates 144a, 144b, 144c may include three sub-plates 144a, 144b, 144c equally divided in the column direction (Y direction) as shown in FIG. 16 . can

As shown in FIG. 17B , the plurality of subplates 144a , 144b , and 144c may have a step formed at a boundary where they are coupled to each other for sealing, and may be coupled in various ways such as bolts.

The groove portion 143 may include a plurality of sub-groove portions 143a, 143b, and 143c independently formed in each of the sub-plates 144a, 144b, and 144c.

When the groove portion 143 is formed in the flow path forming plate 144 , each of the sub-plates 144a, 144b, and 144c may include sub-groove portions 143a, 143b, and 143c independent of each other, respectively.

The sub-groove portions 143a, 143b, and 143c may be formed so as not to communicate with other sub-groove portions 143a, 143b, and 143c.

A plurality of nozzle units 142 may be installed in one or more rows, respectively, on each of the sub-plates 144a, 144b, and 144c. For example, in each of the subplates 144a , 144b , and 144c , as shown in FIG. 16 , a plurality of nozzle units 142 may be arranged in two rows, respectively.

At this time, the plurality of gas injection holes 146 (or the combined plurality of nozzle portions 142 ) formed in each of the sub-plates 144a, 144b, and 144c have the corresponding sub-groove portions 143a, 143b, and 143c. through which they can communicate with each other.

Specifically, as shown in FIG. 18 , the gas injection holes 146 in two rows (or the nozzle parts 142 in the combined two rows) formed in the first sub-plate part 144a are formed in a pattern that crosses each row. They may communicate with each other through the formed first sub-groove portion 143a.

As another embodiment of the gas injection unit 140, the gas injection unit 140, as shown in FIGS. 19 to 20, the gas flow path 149 is formed therein, the gas inlet (180) It may include one or more flow path forming body 148 coupled to the bottom surface of the upper lead 120 so as to communicate with the.

In this case, the gas injection hole 146 may be formed in the flow path forming body 148 at a position corresponding to the gas flow path 149 .

The flow path forming body 148 may be coupled to the bottom surface of the upper lead 120 in various ways, as shown in FIG. 19 .

For example, the flow path forming body 148 may be coupled to the recessed portion 122 formed on the bottom surface of the upper lead 120 as a buried structure.

The concave portion 122 may be formed in a shape corresponding to the flow passage forming body 148 in order to fit the passage forming body 148 to the bottom surface of the upper lid 120 .

For example, the gas injection unit 140 may include a plurality of flow path forming bodies 148 installed on the bottom surface of the upper lid 120 .

In this case, a plurality of gas injection holes 146 may be formed in one or more rows in each flow path forming body 148 .

The plurality of flow passage forming bodies 148 may be a pipe member having a predetermined length so that the plurality of gas injection holes 146 may be formed in one or more rows and having a gas flow passage 149 formed therein.

The plurality of flow path forming bodies 148 are arranged in a row direction (X-axis direction) perpendicular to the column direction (Y-axis direction) so that the plurality of gas injection holes 146 are arranged in a plurality of columns on the surface facing the substrate 10 . can be installed according to

In addition, the gas injection unit 140 including the flow path forming plate 144, the flow path forming body 148, the nozzle unit 142, etc. may be made of various materials and may be made of, for example, a ceramic material. , when the elevating plate unit 150 descends, since plasma is not formed during the process in the region where the gas injection unit 140 is installed, anodizing or coating the components of the gas injection unit 140 is not essential.

On the other hand, when the exhaust port 112 of the substrate processing apparatus is formed on one side of the chamber body 110 , the injected gas is finally discharged by moving toward the exhaust port 112 , so the position of the exhaust port 112 . Gas distribution in the processing space S may become non-uniform due to the bias.

For example, referring to FIG. 18 , assuming that in FIG. 18 , the first sub-plate part 144a is the side adjacent to the gate 111 and the third sub-plate part 144c is the side adjacent to the exhaust port 112 , Since the gas is exhausted through the exhaust port 112 , it is assumed that the gas of the same flow rate is injected through all the gas injection ports 146 . As a result, the gas is concentrated in the vicinity of the exhaust port 112, and as a result, more gas is concentrated in the region adjacent to the exhaust port 112, causing the gas to be non-uniformly distributed. (The gas density at the exhaust port 112 side increases)

Accordingly, the gas ejection unit 140 according to the substrate processing apparatus according to the present invention may be divided into a plurality of gas ejection regions for injecting different flow rates of gas per unit time and unit area for each region.

The gas injection unit 140 is divided into a plurality of gas injection regions and different flow rates of gas are injected per unit time and unit area for each region, so that the gas distribution according to the positional deviation of the exhaust port 112 is non-uniform. can be compensated so that the gas distribution on the upper side of the substrate 10 is uniform during the final process.

The gas injection unit 140 may be divided into various types of gas injection areas on a plane according to the position of the exhaust port 112 .

In this case, the size of each gas injection region and the number of gas injection ports 146 included in each gas injection region may be variously set. That is, of course, it is possible to be equally divided as well as unevenly divided.

For example, when the direction toward the exhaust port 112 from the other side of the chamber body 110 opposite to the exhaust port 112 is referred to as a first direction, the gas injection unit 140 is disposed in a first direction in a plane view. It may be partitioned into a plurality of gas injection regions along a second direction perpendicular to . In this case, a gate 111 for entering and exiting the substrate 10 may be formed on the other side of the chamber body 110 opposite to the exhaust port 112 .

Referring to FIG. 18 , the gas injection unit 140 may be divided into two gas injection regions A and B in a second direction (Y-axis direction) perpendicular to the first direction (X-axis direction). have.

Specifically, the first sub-plate part 144a may correspond to the first gas injection region A, and the second sub-plate part 144b and the third sub-plate part 144c may correspond to the second gas injection region B. can Although not shown, as shown in FIG. 18 , if a plurality of gas flow paths 149 independent of each other can be formed, a plurality of gas injection regions may be partitioned even in a single flow path forming plate part 144 or a flow path forming body 148 . Of course you can. That is, it is sufficient if it is configured so that gas does not communicate between the respective gas injection regions.

At this time, the flow rate of gas injected per unit time and unit area in each gas injection area is "the number of gas injection ports 146 included per unit area of each gas injection area" and "the corresponding gas injection ports for each gas injection area ( 146) can be determined by the "flow rate of gas injected per unit time".

In one embodiment, the flow rate of the gas injected per unit time from the gas injection port 146 corresponding to each gas injection area may be configured to decrease toward the exhaust port 112 side. In this case, even if the number of gas injection ports 146 included per unit area of each gas injection area is the same, the flow rate of the gas injected per unit time from the gas injection ports 146 of the gas injection area close to the exhaust port 112 side is different. Since it is relatively smaller than the gas injection region, there may be a deviation in the flow rate of the gas injected per unit time and per unit area in the gas injection region close to the exhaust port 112 and the gas injection region far from the exhaust port 112 .

Referring to FIG. 18 , in the first gas injection area (A), 22 (two rows) gas injection ports 146 are formed and the second gas injection area (A) has twice the area of the first gas injection area (A). In B), 44 (four rows) of gas injection ports 146 are formed, so the number of gas injection ports 146 per unit area of each gas injection area is the same. However, the flow rate of the gas injected per unit time in the first gas injection area (A) by the two gas supply lines (192, 194) for supplying gas at the same flow rate per unit time is in the second gas injection area (B). It may be twice the flow rate of the gas injected per unit time. Although not shown, of course, the same effect can be obtained even by a single gas supply line 190 by changing the branching structure of the gas supply line.

In another embodiment, the number of corresponding gas injection ports 146 per unit area for each gas injection area may be configured to decrease toward the exhaust port 112 side. At this time, the flow rate of the gas injected per unit time from each gas injection port 146 is preferably configured to be the same, but is not limited thereto.

That is, even if it is assumed that the flow rate of gas injected per unit time from each gas injection port 146 is the same, the distribution of the gas injection port 146 is non-uniform when viewed as a whole. If there is a deviation in the number, since the number of gas injection ports 146 per unit area of the gas injection area adjacent to the exhaust port 112 side is relatively smaller than that of other gas injection areas, the gas injection close to the exhaust port 112 is In the region and the gas injection region far from the exhaust port 112 , there may be a deviation in the flow rate of the gas injected per unit time and unit area.

As another method for compensating for the non-uniformity of gas distribution by the exhaust port 112 , the plurality of gas injection holes 146 may be distributed at a smaller density than other regions in the vicinity of the exhaust port 112 side. In this case, even if the gas injection unit 140 is not partitioned into a plurality of gas injection regions, the gas density is increased in the vicinity of the exhaust port 112 by simply distributing the gas injection ports 146 at a smaller density in the vicinity of the exhaust port 112 . It has the advantage of preventing it from rising.

At this time, the deviation of the distribution of the gas injection holes 146 may be appropriately selected according to the type of process or the process atmosphere.

Through this method, the gas uniformity in the entire process chamber 100 can be improved.

Meanwhile, in relation to the partitioning of the gas injection unit 140 into a plurality of gas injection regions, the description has been focused on the embodiment of FIG. 18 in which the gas injection unit 140 includes the flow path forming plate 144 , but a buried structure Of course, it is equally applicable to the embodiment of FIG. 19 having .

Since the above has only been described with respect to some of the preferred embodiments that can be implemented by the present invention, as noted, the scope of the present invention should not be construed as being limited to the above embodiments, and It will be said that the technical idea and the technical idea accompanying the fundamental are all included in the scope of the present invention.

10: substrate 20: tray
100: process chamber 150: elevating plate part
160: energizing member 200: eastern part of Shanghai

Claims (25)

A process chamber 100 including a chamber body 110 having an upper side open, and an upper lead 120 coupled to the chamber body 110 to form a sealed processing space (S) and electrically grounded;
a substrate support unit 130 installed in the process chamber 100 to which one or more RF power is applied and for supporting the tray 20 on which one or more substrates 10 are seated;
a gas ejection unit 140 installed on the upper side of the processing space (S) to inject gas for substrate processing;
A lifting plate part ( 150) and;
a vertical moving part 200 installed on the upper side of the process chamber 100 to move the lifting plate part 150 up and down;
It includes one or more energizing members 160 for electrically connecting the lifting plate part 150 and the upper lead 120,
The gas injection unit 140 communicates with an external gas supply device for gas supply, and at least one gas inlet 180 passing through the upper lead 120, and the gas inlet 180 communicate with the gas inlet 180 in a horizontal direction. a gas flow path 149 extending along
An exhaust port 112 for gas exhaust is formed on one side of the chamber body 110,
The plurality of gas injection holes (146) are distributed in the vicinity of the exhaust port (112) at a smaller density than other regions. The method according to claim 1,
The plurality of gas injection holes (146), the substrate processing apparatus, characterized in that arranged in a plurality of rows on the surface facing the substrate (10). The method according to claim 1,
The gas injection unit 140 is coupled to each of the plurality of gas injection holes 146, characterized in that it includes a plurality of nozzle units 142 in which one or more injection holes 141 for gas injection are formed. Substrate processing equipment. 4. The method according to claim 3,
The nozzle part 142 is coupled to the gas injection hole 146 to protrude downward, and a plurality of injection holes 141 for gas injection are formed along the periphery of the side surface. The method according to claim 1,
The gas injection unit 140,
It further includes a flow path forming plate 144 coupled to the bottom surface of the upper lead 120 to form the gas flow path 149 together with the bottom surface of the upper lead 120,
The gas injection hole (146) is a substrate processing apparatus, characterized in that formed in a position corresponding to the gas flow path (149) of the flow path forming plate (144). 6. The method of claim 5,
The flow path forming plate (144), the substrate processing apparatus, characterized in that provided with a groove (143) for forming the gas flow path (149) on a coupling surface coupled to the upper lead (120). 7. The method of claim 6,
The flow path forming plate 144 includes a plurality of sub-plates 144a, 144b, 144c divided on a plane,
The groove portion 143 is a substrate processing apparatus, characterized in that it includes a plurality of sub-groove portions (143a, 143b, 143c) formed independently of each other in each of the sub-plates (144a, 144b, 144c); 8. The method of claim 7,
A plurality of gas injection holes (146) formed in each of the sub-plates (144a, 144b, 144c) are in communication with each other through the corresponding sub-groove (143a, 143b, 143c). 6. The method of claim 5,
The upper lead (120), the substrate processing apparatus, characterized in that provided with a groove (143) for forming the gas flow path (149) on a bottom surface coupled to the flow path forming plate (144). 10. The method according to any one of claims 6 and 9,
The gas injection unit 140 is coupled to the plurality of gas injection ports 146 formed in the flow path forming plate 144, respectively, and a plurality of nozzle units having one or more injection holes 141 for gas injection ( 142) Substrate processing apparatus comprising the. The method according to claim 1,
The gas injection unit 140,
The gas flow path 149 is formed therein, and it further includes at least one flow path forming body 148 coupled to the bottom surface of the upper lead 120 so as to communicate with the gas inlet 180,
The gas injection port (146) is a substrate processing apparatus, characterized in that formed in the flow path forming body (148) at a position corresponding to the gas flow path (149). 12. The method of claim 11,
The gas injection unit 140 includes a plurality of flow path forming bodies 128 installed on the bottom surface of the upper lid 120,
A substrate processing apparatus, characterized in that the plurality of gas injection holes (146) are formed in one or more rows in each flow path forming body (148). 13. The method of claim 12,
A substrate processing apparatus, characterized in that a concave portion (122) having a shape corresponding to that of the flow passage forming body (148) is formed on the bottom surface of the upper lid (120) so that the passage forming body (148) is fitted. The method according to claim 1,
An exhaust port 112 for gas exhaust is formed on one side of the chamber body 110,
The gas ejection unit 140 is divided into a plurality of gas ejection regions for injecting different flow rates of gas per unit time and unit area for each region. delete A process chamber 100 including a chamber body 110 having an upper side open, and an upper lead 120 coupled to the chamber body 110 to form a sealed processing space (S) and electrically grounded;
a substrate support unit 130 installed in the process chamber 100 to which one or more RF power is applied and for supporting the tray 20 on which one or more substrates 10 are seated;
a gas ejection unit 140 installed on the upper side of the processing space (S) to inject gas for substrate processing;
A lifting plate part ( 150) and;
a vertical moving part 200 installed on the upper side of the process chamber 100 to move the lifting plate part 150 up and down;
It includes one or more energizing members 160 for electrically connecting the lifting plate part 150 and the upper lead 120,
The gas injection unit 140 communicates with an external gas supply device for gas supply, and at least one gas inlet 180 passing through the upper lead 120, and the gas inlet 180 communicate with the gas inlet 180 in a horizontal direction. a gas flow path 149 extending along
An exhaust port 112 for gas exhaust is formed on one side of the chamber body 110,
The gas injection unit 140 is divided into a plurality of gas injection regions for injecting different flow rates of gas per unit time and unit area for each region,
When the direction toward the exhaust port 112 from the other side of the chamber body 110 opposite to the exhaust port 112 is referred to as a first direction, the gas injection unit 140 is disposed in the first direction in plan view. A substrate processing apparatus, characterized in that it is divided into the plurality of gas injection regions along a second direction perpendicular to the. 17. The method of claim 16,
A substrate processing apparatus, characterized in that the flow rate of the gas injected per unit time from the gas injection port 146 corresponding to each gas injection area decreases toward the exhaust port 112 side. A process chamber 100 including a chamber body 110 having an upper side open, and an upper lead 120 coupled to the chamber body 110 to form a sealed processing space (S) and electrically grounded;
a substrate support unit 130 installed in the process chamber 100 to which one or more RF power is applied and for supporting the tray 20 on which one or more substrates 10 are seated;
a gas ejection unit 140 installed on the upper side of the processing space (S) to inject gas for substrate processing;
A lifting plate part ( 150) and;
a vertical moving part 200 installed on the upper side of the process chamber 100 to move the lifting plate part 150 up and down;
It includes one or more energizing members 160 for electrically connecting the lifting plate part 150 and the upper lead 120,
The gas injection unit 140 communicates with an external gas supply device for gas supply, and at least one gas inlet 180 passing through the upper lead 120, and the gas inlet 180 communicate with the gas inlet 180 in a horizontal direction. a gas flow path 149 extending along
An exhaust port 112 for gas exhaust is formed on one side of the chamber body 110,
The gas injection unit 140 is divided into a plurality of gas injection regions for injecting different flow rates of gas per unit time and unit area for each region,
The substrate processing apparatus, characterized in that the number of corresponding gas injection ports (146) per unit area for each gas injection area is smaller toward the exhaust port (112) side. The method according to claim 1,
The conducting member 160 is
A substrate processing apparatus, comprising a plurality of parts, and installed along an edge of the lifting plate part 150 between the lifting plate part 150 and the upper lead 120. 20. The method of claim 19,
The conducting member 160 is
The substrate processing apparatus, characterized in that it is a flexible strap that can be bent as the distance between the lifting plate part (150) and the upper lead (120) is reduced. 20. The method of claim 19,
The conducting member 160 is
The substrate processing apparatus, characterized in that it has a material capable of bending toward the center of the upper surface of the lifting plate (150) as the distance between the lifting plate (150) and the upper lead (120) is reduced. 22. The method of claim 21,
The conducting member 160 is
The substrate processing apparatus, characterized in that it is disposed between the plurality of gas injection holes (146) so as not to vertically overlap the plurality of gas injection holes (146) when the conducting member (160) is bent. 20. The method of claim 19,
The lifting plate portion 150 is made of a rectangular plane shape,
The conducting member 160 is
In order to prevent the current conducting member 160 from interfering with the adjacent conducting member 160 when it is bent, the substrate, characterized in that it is disposed at a larger interval than the rest of the region in the region corresponding to the vertex of the lifting plate unit 150 processing unit. 20. The method of claim 19,
The lifting plate portion 150 is made of a rectangular plane shape,
The conducting member 160 is
In order to prevent the current conducting member 160 from interfering with the adjacent conducting member 160 when it is bent, the conducting member 160 disposed closest to the rectangular vertex of the lifting plate part 150 is the lifting plate part ( 150), the substrate processing apparatus, characterized in that it is arranged to form an inclination with the edge. 10. The method according to any one of claims 1 to 9,
The substrate processing apparatus, a substrate processing apparatus, characterized in that performing a reactive ion etching process.

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