KR102401606B1 - vertically stacked multi-chamber for processing semiconductor - Google Patents

Abstract

In the semiconductor processing apparatus having the vertically stacked multi-process chamber configuration of the present invention, a load lock chamber necessary for moving a wafer between processing chambers is not required, and for this purpose, a chamber separation unit between the process chambers may be opened.

Description

Vertically stacked multi-chamber for processing semiconductor

FIELD OF THE INVENTION The present invention relates to a vertically stacked multi-chamber for semiconductor processing.

Korean Patent Laid-Open Publication No. 10-2005-0093951 discloses a stacked-type chamber for a semiconductor process. In this document, a plurality of processes including a susceptor for forming a constant reaction space therein and for placing a substrate, a plasma electrode positioned above the susceptor and connected to an RF power source, a gas injection means, and an exhaust means, respectively a chamber module in which chambers are stacked up and down; a load lock module connected to each side of the plurality of process chambers with a door interposed therebetween, the load lock module including a plurality of load lock chambers for temporarily storing the substrate; a substrate tray for placing the substrate on an upper surface and transporting the substrate by driving a plurality of rollers between the load lock chamber and the process chamber; and a substrate storage module located on the side of the load lock module and including a cassette for loading the substrate.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor process apparatus having a plurality of stacked process chambers that does not require a loadlock chamber. This can be achieved by the following technical configuration.

According to one aspect of the present invention, there is provided a semiconductor processing apparatus having vertically stacked process chambers, comprising: a plurality of vertically stacked process chambers; and chamber separation units separating the plurality of process chambers, wherein each of the plurality of chamber separation units may be configured such that process chambers from which it is separated communicate with each other.

In one embodiment, each of the plurality of chamber separators is disposed inside a process chamber wall so that the process chambers it is separating are open to communicate with each other.

In one embodiment, each of the plurality of chamber separation units is horizontally retractable or withdrawable inside and out of the process chambers so that the process chambers from which they are separated communicate with each other, the semiconductor processing apparatus is provided.

In one embodiment, a semiconductor processing apparatus is provided, which further includes a plurality of process gas supply mechanisms disposed to correspond to the respective process chambers and horizontally drawn into or withdrawn into the process chambers.

In one embodiment, a substrate support for supporting a substrate to be worked; and a substrate vertical movement unit configured to move the substrate support unit in a vertical direction.

In one embodiment, the substrate support further comprises a position sensor.

In one embodiment, there is provided a semiconductor processing apparatus, further comprising: a control unit for opening a corresponding chamber separation unit or horizontally moving a wall of the process chamber when the substrate vertical moving unit moves the substrate support unit vertically.

In an embodiment, when the vertical movement of the substrate support unit is finished, the control unit horizontally introduces the process gas supply mechanism into the process chamber.

1 illustrates the configuration of stacked chambers according to an embodiment of the present invention.
2 illustrates an operating state of a chamber separation unit according to an embodiment of the present invention.
3 illustrates a configuration of a chamber separation unit according to an embodiment of the present invention.
4 illustrates the configuration of stacked chambers according to an embodiment of the present invention.
5 illustrates a movement state of the stacked-type chambers according to an embodiment of the present invention.
6 shows a process first preparation state of a stacked chamber according to an embodiment of the present invention.
7 shows a process second preparation state of a stacked chamber according to an embodiment of the present invention.
8 is a block diagram of a control unit of a semiconductor processing apparatus according to an exemplary embodiment.

1 is a schematic diagram of a semiconductor processing apparatus 100 including vertically stacked multiple process chambers in accordance with an embodiment of the present invention. The apparatus 100 includes an upper process chamber 101 , an intermediate process chamber 102 , and a lower process chamber 103 , but the present invention is not limited to these three process chambers, two intermediate, four or more It can also be applied to process chambers. These applications can be easily modified by those skilled in the art with reference to the teachings of the present invention below. These three process chambers 101 to 103 are separated from each other by chamber separators 104 and 105 . FIG. 1 shows, in an exemplary dimension, a state in which a wafer or semiconductor substrate 107 to be worked is in an intermediate process chamber 102 . Although not shown, the upper process chamber 101, the intermediate process chamber 102, and the lower process chamber 103 are surrounded by a vacuum chamber (not shown) outside thereof, so that a vacuum state can be maintained.

Further, a substrate support 106 on which a semiconductor substrate or wafer 107 is supported is provided in the horizontal direction in FIG. 1 , and an example of the substrate support 106 is a pedestal. This pedestal may include a wafer chucking or dechcuking mechanism. Also, there is a vertical transfer mechanism 108 for moving this substrate support 106 in the up-down direction. An example of such a vertical transport mechanism could be a lift mechanism. This vertical transport mechanism 108 can be driven by a vertical drive 115 .

In addition, an upper gas supply mechanism 109 capable of moving in and out of the upper process chamber 101 in the horizontal direction, for example, an upper showerhead is configured. Similarly, an intermediate gas supply mechanism 110 that can horizontally move in and out of the intermediate process chamber 102, for example, an intermediate showerhead is configured. Similarly, a lower gas supply mechanism 111 that can horizontally move in and out of the lower process chamber 103, for example, a lower showerhead is configured. These upper gas supply mechanism 109 , intermediate gas supply mechanism 110 , and lower gas supply mechanism 111 are driven by a common horizontal drive unit 112 . Alternatively, these upper gas supply mechanism 109, intermediate gas supply mechanism 110 and lower gas supply mechanism 111 may be driven by separate horizontal drive units (not shown).

In addition, the upper process chamber 101 and the intermediate process chamber 102 are separated by a first chamber separator 104, and the intermediate process chamber 102 and the lower process chamber 103 are separated by a second chamber separator ( 105) is separated. These chamber separators may exist in the form of a plate or in the form of a multi-stage pipe. That is, the configuration of the chamber separation units 104 and 105 will be described with reference to FIG. 2 . The upper state of FIG. 2 refers to a state in which the chamber separation units 104 and 105 are closed (CLOSED STATE), and the lower state refers to a state in which the chamber separation units 104 and 105 are opened (OPEN STATE). In the closed state the chambers are isolated from each other, but in the open state the chambers are in communication with each other. In the closed state, the corresponding process is performed in the corresponding process chamber, and in the open state, the wafer or substrate 107 is moved to another process chamber. In one embodiment, deposition may occur in upper process chamber 101 , etching may occur in intermediate process chamber 102 , and cleaning may occur in lower process chamber 103 . However, these bars are exemplary only, and the process of each chamber may be differently specified by a semiconductor process engineer.

3 shows an example of one configuration of chamber separators 104 , 105 that may implement such an open or closed state. That is, since it is configured as a multi-step plate type, one or both sides of the chamber separation units 104 and 105 can be expanded or contracted. That is, the chamber separators 104 and 105 may generally have a length-adjustable configuration. In this form, there may be a Javara type. Alternatively, unlike FIG. 1 , the chamber separation units 104 and 105 are not disposed inside each chamber, but may be horizontally drawn in or drawn out by the driving unit 112 after being outside the chamber. That is, these chamber separation units 104 and 105 are in an open or drawn out state so that the substrate support 106 can move when the semiconductor substrate 107 is vertically moved, and are closed when a corresponding process is started in the corresponding process chamber. or it may have an incoming state. FIG. 4 shows a semiconductor process apparatus having a configuration in which the chamber separation units 104 and 105 are drawn out or drawn in from the outside, unlike FIG. 1 .

In addition, an upper exhaust channel 114, an intermediate exhaust channel 115, and a lower exhaust channel 116 are provided in communication with the upper process chamber 101, the intermediate process chamber 102, and the lower process chamber 103. . These exhaust channels serve to exhaust the corresponding process gas within each chamber after the corresponding process is completed. Each of these respective exhaust channels is connected to a common exhaust pump or a separate exhaust pump (not shown).

FIG. 5 shows a state in which the wafer or substrate 107 is being moved to finish operation in the intermediate process chamber 102 and receive a target operation in the upper process chamber 101 . For this purpose, the chamber separation 104 between the upper processor chamber 101 and the intermediate process chamber 102 is in an open state. Such an open state may be achieved by moving the multi-stage plate from the inside to the outside of the chamber as shown in FIG. 3 or by withdrawing the separation plate to the outside of the chamber as shown in FIG. 4 . In order to maintain airtightness during these withdrawals and retractions, there is a sealing sealing between the chamber wall and the chamber separation. Such a hermetic seal may also exist between the chamber wall and the process supply mechanisms 109 to 111 that move horizontally, for example a showerhead. Such a hermetic seal may also exist between the vertical movement mechanism 108 and the chamber wall.

6 shows a process first preparation state of a stacked chamber according to an embodiment of the present invention. 7 shows a process second preparation state of a stacked chamber according to an embodiment of the present invention. In the first ready state, the wafer support 106 such as a pedestal is positioned at the same height as the chamber separation 104 . For such precise height matching, a position detection sensor such as a laser sensor may be present on the wafer support 106 . Further, upon contact between the wafer support 106 and the chamber separator 104 , a hermetic seal may also be present where the contact is made. In the second preparation state, the upper showerhead 109 corresponding to the upper chamber moves into the upper process chamber 101 . This movement is realized by an upper horizontal drive unit 109a (see FIG. 7 ) connected to the drive unit 112 . When this second preparation state is achieved, the corresponding process gas is discharged onto the substrate 107 through the upper showerhead 109 . The process gas is a deposition gas if the process is deposition, an etching gas if etching, and a cleaning gas if cleaning.

8 is a block diagram of a control unit 114 of a semiconductor processing apparatus according to an embodiment of the present invention. The control unit 114 includes a chamber separation unit operation control unit 114a that controls the opening or closing operation of the process chamber separation units 104 , 105 , or a horizontal retracting or withdrawing operation or a horizontal inward movement or horizontal outward movement. The control unit 114 includes a process gas supply mechanism operation control unit 114b that controls the horizontal intake or withdrawal operation or horizontal inward movement or horizontal outward movement of the corresponding process gas supply mechanisms 109 to 111 . The control unit 114 includes a substrate vertical movement mechanism operation control unit 114c that controls the upward movement or downward movement or stop of the substrate vertical movement mechanism 108 for moving the substrate support. Also, the control unit 114 includes a process gas supply control unit 114d that controls the supply of the process gas. Also, the control unit 114 includes a process gas discharge control unit 114e that controls discharge of the process gas. Subcomponents of each of these controllers may be implemented in software, hardware, or a combination thereof.

The control unit 114 opens or horizontally moves the chamber separators 104 and 105 to the outside of the process chamber wall when the substrate vertical movement mechanism 108 moves the substrate support 107 vertically. At this time, the substrate vertical movement mechanism operation control unit 114c and the chamber separation unit operation control unit 114a are enabled. Also, when the vertical movement of the substrate support unit is finished, the control unit 114 horizontally introduces the process gas supply mechanisms 109 to 111 into the process chamber. For this purpose, the process gas supply mechanism operation control unit 114b is enabled. When this is enabled, the corresponding control units may be connected to the corresponding driving units 112 and 113 . On the other hand, the driving unit 112 may be used as a driving unit for realizing opening or closing the chamber separation units 104 and 105, horizontally retracting or withdrawing, or horizontally inwardly moving or outwardly moving, but a separate driving unit (not shown) ) can be used. In this case, the chamber separation unit operation control unit 114a is connected to this driving unit. Such a connection may be made by various methods such as a wireless network, a wired network, and short-distance communication.

In this specification, specific descriptions of RF-related components related to plasma generation, which are essential components for carrying out the present invention, are not described. This is in order not to obscure the point of the present invention.

The processing chambers may include sensors for sensing the various materials and their respective concentrations, pressure, temperature, and other process parameters and providing information to the control unit regarding reactor conditions during the process. Examples of chamber sensors that may be monitored during the process include mass flow controllers, pressure sensors such as manometers, and thermocouples located within the pedestal. The sensors may also include an infrared or optical detector for monitoring the presence of gases within the chamber.

In certain embodiments, control 114 is adapted to control process conditions during processing and/or subsequent deposition. Control 114 will typically include one or more memory devices and one or more processors. A processor may include a CPU or computer, analog and/or digital input/output connections, stepper motor controller boards, and the like. There will typically be a user interface associated with control 114 .

will be. The user interface may include a display screen, graphical software displays of apparatus and/or process conditions and user input devices such as pointing devices, keyboard, touch screen, microphone, and the like.

In certain embodiments, the controller 114 may also control all activities during the process, including gas flow rate, chamber pressure, generator process parameters. Control 114 executes system control software including sets of instructions for controlling timing, mixture of gases, chamber pressure, pedestal (and substrate) temperature, and other parameters of a particular process. The control may also control the concentration of various process gases in the chamber by adjusting the valves, liquid delivery controllers and MFCs of the delivery system, as well as flow limiting valves and exhaust line. The controller executes system control software comprising sets of instructions for controlling timing, flow rates of gases and liquids, chamber pressure, substrate temperature, and other parameters of a particular process. Other computer programs stored on memory devices associated with the controller may be employed in some embodiments. In certain embodiments, the control controls the transfer of the substrate to/out of the various components of the apparatus.

The computer program code for controlling a process in a process sequence may be written in any conventional computer readable programming language, such as, for example, assembly language, C, C++, Pascal, Fortran, or others. Compiled object code or scripts are executed by the processor to perform tasks specified in the program.

is done The system software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of the chamber components necessary to perform the various processes described. Examples of programs or sections of programs for this purpose include gas control code, pressure control code and plasma control code.

The controller parameters relate to process conditions such as, for example, timing of each operation, pressure in the chamber, substrate temperature, process gas flow rate, RF power, and others described above. These parameters are provided to the user in the form of a recipe and may be entered using a user interface. to monitor the process

Signals may be provided by analog and/or digital input connections of the control unit. The signals for controlling the process are output on the analog and digital output connections of the device.

The disclosed methods and apparatuses may also be implemented in systems including lithography and/or patterning hardware for semiconductor fabrication. Further, the disclosed methods may be implemented in lithography and/or patterning processes preceding or subsequent to the disclosed methods. The apparatus/processes described herein above may be used in conjunction with lithographic patterning tools or processes, for example, for the fabrication or processing of semiconductor devices, displays, LEDs, optoelectronic panels, and the like. Typically, but not necessarily, such tools/processes may be used or performed together within a common manufacturing facility. Film lithographic patterning includes some or all of the following operations, each typically realized using a plurality of possible tools, the operations comprising: (1) photolithography onto a workpiece, such as a substrate, using a spin-on or spray-on tool. applying the resist; (2) curing the photoresist using a hot plate furnace or UV curing tool; (3) exposing the photoresist to visible or ultraviolet or x-ray light using a tool such as a wafer stepper. (4) developing the photoresist to pattern it by selectively removing the resist using a tool such as a wet bench, (5) patterning the resist using a dry or plasma assisted etching tool and (6) removing the photoresist using a tool such as an RF or microwave plasma resist stripper.

Although the foregoing invention has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatus of the present invention. Accordingly, the examples provided are to be considered illustrative and limiting, and the invention is not limited to the details provided herein.

Claims (8)

A semiconductor processing apparatus having vertically stacked process chambers, comprising:
a plurality of vertically stacked process chambers; and
and chamber separators separating the plurality of process chambers;
Each of the plurality of chamber separation parts is displaceable such that adjacent process chambers separated from each other by themselves communicate with each other,
The semiconductor processing device,
a substrate support for supporting a substrate to be worked; and
Further comprising a substrate vertical moving unit for moving the substrate support in a vertical direction,
Each of the plurality of chamber separation units is in a state of being drawn out of a corresponding process chamber so that the substrate support part can vertically move when the substrate is vertically moved, and is introduced into the corresponding process chamber when a corresponding process is to be started in the corresponding process chamber. characterized by being
semiconductor processing device. delete delete delete delete delete delete delete

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