KR102398755B1 - Photoresist stripper composition - Google Patents

Abstract

The present invention relates to a photoresist stripper composition, and more particularly, to improve the removal rate of a photoresist modified by a specific compound having a high reducing power and remove a photoresist having a high peeling force so that there is no photoresist remaining on a substrate It relates to a liquid composition.

Description

Photoresist stripper composition {PHOTORESIST STRIPPER COMPOSITION}

The present invention relates to a photoresist stripper composition, and more particularly, by including a specific compound having a high reducing power, improves the removal rate of the denatured photoresist and has a high peeling force so that there is no photoresist remaining on the substrate It relates to a photoresist stripper composition.

The photolithography process is a series of photographic processes in which a pattern designed for a mask is transferred onto a substrate on which a thin film to be processed is formed. The photolithography process is used to manufacture integrated circuits, highly integrated circuits, and the like.

In the photolithography process, a photoresist, which is a photosensitive material, is coated on a glass substrate on which a thin film is formed, and a mask is placed on the photoresist-coated substrate and exposed, and then the photoresist is developed. ) to form a photoresist pattern. The thin film may be, for example, a metal film, an insulating film, or the like. The microcircuit pattern may be transferred and etched by wet or dry etching using the photoresist pattern as a mask. Thereafter, the process proceeds to a process of removing the unnecessary photoresist pattern using a stripper, which is a composition for removing the photoresist pattern.

Among them, the photoresist stripper used in the process of forming electrode circuits for displays and semiconductors should be able to strip the photoresist at a low temperature within a short time, and should not leave a photoresist residue on the substrate after washing, At the same time, it should have the ability to peel without damage to the organic insulating film and the metal wiring. The photoresist stripper may basically include an organic compound such as an alkanol amine compound, an alkylene glycol alkyl ether compound, an aprotic polar solvent, and a corrosion inhibitor. The various stripper compositions as described above may bring about significant differences in photoresist peelability, metal corrosion properties, variety of cleaning processes after stripping, work reproducibility, storage stability, and economic feasibility depending on the composition and content ratio of the composition. Therefore, the development of an economical photoresist stripper composition having suitable performance for various process conditions has been continuously demanded.

In particular, with the recent increase in microcircuit patterns, the process of transferring the photoresist layer of the microcircuit pattern to the photoresist lower layer of the microcircuit pattern by dry or wet etching the conductive metal layer or insulating layer using the patterned photoresist layer as a mask and peeling the unnecessary photoresist layer The process of removing it with a liquid is the most important process. In the process of dry or wet etching, the photoresist undergoes a denaturation process, and the stripper composition used in the past did not have sufficient peeling force.

In order to solve this problem, Korean Patent Laid-Open No. 10-2006-0117667 (Patent Document 1) discloses a water-soluble organic amine compound, a protic alkylene glycol monoalkylene ether compound having a boiling point of at least 150 ° C, a polar aprotic Disclosed is a stripper composition for a photoresist comprising a solvent and a corrosion inhibitor.

However, the stripper composition as described above is altered by a severe high-temperature process, dry etching, etching, and ion implantation process, and the photoresist etching residue generated by reacting with a cross-linked cured photoresist film and metallic by-products in the etching process. It is not sufficient in terms of power and corrosion prevention performance of metal wiring, and the problem that the photoresist film is not sufficiently removed and that foreign substances and stains are generated still remained.

Republic of Korea Patent Publication No. 10-2006-0117667 (November 17, 2006)

An object of the present invention is to provide a photoresist stripper composition capable of improving the removal rate of the denatured photoresist in order to solve the above problems. More specifically, by including a specific hydroxylamine compound having high reducing power, it is possible to quickly peel off the denatured photoresist even after dry or wet etching, and foreign matter and stains do not remain so that there is no photoresist remaining on the substrate. An object of the present invention is to provide a photoresist stripper composition.

Another object of the present invention is to provide a method for removing a photoresist using the above-described photoresist stripper composition.

In order to achieve the above object, the present invention is a secondary amine having a boiling point of 100 °C or more and represented by the following formula (1); alcohol compounds; aprotic polar solvents; And it relates to a photoresist stripper composition comprising a; and an alkanol amine compound.

[Formula 1]

(R ₁ and R ₂ in Formula 1 are each independently hydrogen or a straight-chain or branched alkyl having 3 to 5 carbon atoms, and at least one of R ₁ or R ₂ is not hydrogen.)

According to an embodiment of the present invention, the secondary amine represented by Formula 1 may be one or more selected from N-isopropyl hydroxylamine and N-isobutyl hydroxylamine.

According to an embodiment of the present invention, the photoresist stripper composition comprises 0.1 to 10% by weight of a secondary amine represented by the following Chemical Formula 1, 30 to 80% by weight of an alcohol compound, 10 to 60% by weight of an aprotic polar solvent, and an alkane 1 to 30% by weight of the all amine compound may be included.

According to an embodiment of the present invention, the alcohol compound is dimethylene glycol monoethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether. ), diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether ether), dipropylene glycol monobutyl ether, Ethylene Glycol Propyl Ether, Tetrahydrofurylalcohol, Ethylene Glycol Mono-tert-butyl Ether One or two or more selected from the group consisting of may be selected.

According to an embodiment of the present invention, the alkanol amine compound is monoethanolamine (MEA), monoisopropanolamine (MIPA), imidazolidineethanol (IME), 2-amino-1-propanol (AP), amino Isopropanol (AIP), N-methylaminoethanol (N-MAE), 3-amino-1-propanol, 4-amino-1-butanol, aminoethoxyethanol (AEE), 2-(2-aminoethylamino)- One or two or more types may be selected from 1-ethanol, diethanolamine (DEA), 1-(2-hydroethyl)piperazine (HEP), and triethanolamine (TEA).

According to an embodiment of the present invention, the aprotic polar solvent is N-methylpyrrolidone (NMP), N-methylformamide (NMF), ethylpyrrolidone (NEP), dimethylimidazolidinone (DMI) , dimethyl sulfoxide (DMSO), N- dimethyl propionamide (DMPA), N, N- dimethyl lactamide (DMLA), N- methyl propion amide (NMPA) may be selected from one type or two or more types.

According to an embodiment of the present invention, the photoresist stripper composition may further include one or two selected from a triazole compound and deionized water.

According to an embodiment of the present invention, the photoresist stripper composition may further include 0.01 to 5% by weight of a triazole compound and 1 to 10% by weight of deionized water.

Since the photoresist stripper composition of the present invention contains a specific hydroxylamine compound represented by Formula 1, it is possible to quickly peel off the denatured photoresist even after dry or wet etching, and foreign substances and stains do not remain on the substrate. There is an advantage that can significantly increase the efficiency in the process.

In addition, by using a secondary amine having a boiling point of 100°C or higher, volatilization of the photoresist stripper composition during the process is reduced, thereby significantly increasing the efficiency of the process.

1 shows a field emission scanning electron microscope (FE-SEM) photograph of a surface of a substrate after a dry etching process using a photoresist stripper composition according to an embodiment of the present invention.

Hereinafter, a preferred embodiment and a method for measuring physical properties of the photoresist stripper composition will be described in detail. The present invention relates to a photoresist stripper composition used in the manufacture of displays and semiconductors, and may be better understood by the following examples, which are for illustrative purposes of the present invention, and the appended claims It is not intended to limit the protection scope limited by the scope.

As a result of research to develop a stripper composition that can improve the removal rate of the modified photoresist, the inventors of the present invention remove the photoresist with increased reducing power by including a specific hydroxylamine compound having a boiling point of 100°C or higher. The present invention was completed by discovering that it is possible to shorten the time consumed for did

Hereinafter, an embodiment of the present invention will be described in more detail.

The photoresist stripper composition according to an embodiment of the present invention is

a secondary amine having a boiling point of 100 °C or higher and represented by the following formula (1); alcohol compounds; aprotic polar solvents; and an alkanol amine compound.

[Formula 1]

(R ₁ and R ₂ in Formula 1 are each independently hydrogen or a straight-chain or branched alkyl having 3 to 5 carbon atoms, and at least one of R ₁ or R ₂ is not hydrogen.)

In the case of a hydroxylamine in which R ₁ and R ₂ are both hydrogen, or a tertiary amine in which R ₁ and R ₂ are both alkyl, the conventional stripper composition is employed to improve peel strength, but has a low boiling point and high volatility; The stability of the composition was lowered, and the problem remained that the peeling force was not sufficiently improved.

In order to solve this problem, a secondary amine represented by Formula 1 was adopted. The specific hydroxylamine compound represented by Formula 1 is a strong nucleophilic material, and it is easy to remove the photoresist modified by dry etching. In addition, the boiling point is 100° C. or higher, preferably, the boiling point is 100 to 200° C., which is effective because the problem of volatilization of the stripper composition does not occur during the process.

The photoresist subjected to the dry etching process has a carboxyl group and reacts with the carboxyl group of the photoresist modified by the strong nucleophilicity of the secondary amine represented by Formula 1 above. This reactant is changed to a type that is easily soluble in an alkali state and may serve to improve the ability to remove the denatured photoresist. In addition, the photoresist that has undergone the dry process forms a metal-halide with the metals of the lower layer, and the metal halide undergoes a reduction reaction by the strong reducing power of the secondary amine represented by Formula 1 above. The photoresist denatured by the reaction can be easily peeled off, thereby reducing the time consumed for removing the photoresist, and improving the peeling force, thereby increasing process efficiency. In addition, there is an advantage of improving volatility and composition stability.

The content of the secondary amine represented by Formula 1 according to an embodiment of the present invention is not limited, but may be included in an amount of 0.1 to 10% by weight. More preferably, it may contain 0.1 to 5% by weight. By including in the above range, it is possible to significantly shorten the photoresist removal time by improving the peeling force, there is an advantage of increasing volatility and stability.

When the content of the secondary amine represented by Formula 1 is less than 0.1 wt %, the improvement in peel strength is insignificant, so it takes a long time to remove the photoresist, and foreign substances and stains may remain on the substrate. In addition, when it exceeds 10% by weight, there is a risk that the lower film may be corroded.

According to an embodiment of the present invention, the photoresist stripper composition of the present invention may include an alcohol compound. The alcohol compound according to an embodiment of the present invention may further improve the peeling force of the modified photoresist in combination with the secondary amine represented by Chemical Formula 1 above.

The alcohol compound is not limited as long as it is an alcohol compound clearly known in the art, but for example, dimethylene glycol monoethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoethyl ether, Ethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether , dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, Ethylene Glycol Propyl Ether, Ethylene Glycol Mono-tert-butyl Ether), and tetrahydrofuryl alcohol (Tetrahydrofurylalcohol) may be selected from one or two or more, but is not limited thereto.

More preferably, diethylene glycol monobutyl ether, diethylene glycol monomethyl ether, ethylene glycol mono-butyl ether, diethylene glycol mono One or two or more types may be selected from among butyl ether (diethylene glycol mono-tert-butyl ether) and tetrahydrofurylalcohol.

The alcohol compound according to an embodiment of the present invention may be included in an amount of 30 to 80% by weight based on the total weight of the photoresist stripper composition. More preferably 40 to 70% by weight may be included. By being included in the above range, it is possible to significantly improve the peeling force for the modified photoresist.

When the content of the alcohol compound is less than 30% by weight, the peeling force for the modified photoresist is lowered, and there is a risk that stains or foreign substances may remain on the substrate. Problems with increasing damage can occur.

According to an embodiment of the present invention, the photoresist stripper composition of the present invention may include an alkanol amine compound. The alkanol amine compound may serve to facilitate penetration of the solvent component by acting on a relatively weak portion of the surface of the modified photoresist.

The alkanol amine compounds of the present invention are obviously known in the art and are not limited thereto. For example, monoethanolamine (MEA), imidazolidine ethanol (IME), monoisopropanolamine (MIPA), aminoisopropanol (AIP), 2-amino-1-propanol, N-methylaminoethanol (N-MAE) ), 3-amino-1-propanol, 4-amino-1-butanol, aminoethoxyethanol (AEE), 2-(2-aminoethylamino)-1-ethanol, diethanolamine (DEA), 1-( One or two or more kinds may be selected from 2-hydroethyl)piperazine (HEP) and triethanolamine (TEA).

More preferably, monoethanolamine (MEA), triethanolamine (TEA), 1- (2-hydroethyl) piperazine (HEP), aminoethoxyethanol (AEE), diethanol ami (DEA), monoisopropanolamine ( MIPA) and N-methylaminoethanol (N-MAE) may be selected from one or two or more, but is not limited thereto.

The alkanol amine compound according to an embodiment of the present invention may be included in an amount of 1 to 30% by weight based on the total weight of the photoresist stripper composition. More preferably, it may contain 3 to 15% by weight. By being included in the above range, it is possible to significantly improve the peeling force for the modified photoresist.

When the content of the alkanolamine compound is less than 1 wt%, the peeling force for the modified photoresist is lowered and there is a risk of stains or foreign substances remaining on the substrate, and when the content is more than 30 wt%, aluminum and Corrosion of copper wiring may occur.

According to an embodiment of the present invention, the photoresist stripper composition of the present invention may include an aprotic polar solvent. The aprotic polar solvent may be dissolved in a photoresist stripper by separating the photoresist pattern into unit molecules. In particular, the secondary amine and alkanol amine compounds represented by Formula 1 may penetrate into the photoresist to assist in removing the pattern, and may improve the stability of the composition by controlling volatility during the process.

The aprotic polar solvent is not limited as long as it is a well-known compound in the art. For example, N-methylpyrrolidone (NMP), N-methylformamide (NMF), ethylpyrrolidone (NEP), dimethylimidazolidinone (DMI), dimethylsulfoxide (DMSO), N-dimethyl One or two or more types may be selected from propionamide (DMPA), N,N-dimethyllactamide (DMLA), and N-methylpropionamide (NMPA).

More preferably dimethyl sulfoxide (DMSO), N-methylformamide (NMF), N-methylpyrrolidone (NMP), N-dimethylpropionamide (DMPA), ethylpyrrolidone (NEP) and dimethylimidazoli One or two or more kinds of dinon (DMI) may be selected, but the present invention is not limited thereto.

The aprotic polar solvent according to an embodiment of the present invention may be included in an amount of 10 to 60% by weight based on the total weight of the photoresist stripper composition. More preferably, it may contain 20 to 50% by weight. By being included in the above-mentioned range, the dissolving power for the modified photoresist is increased, thereby remarkably increasing the peeling rate.

When the content of the aprotic polar solvent is less than 10% by weight, the dissolving power of the photoresist is lowered, so that the peeling force of the photoresist may be lowered. is likely to increase.

Since the photoresist stripper composition of the present invention may be an aqueous or non-aqueous composition well known in the art in addition to the above components, deionized water may be further included within a range that does not impair the physical properties of the photoresist stripper composition. More specifically, it may include 1 to 10% by weight, but is not limited thereto.

As a preferred embodiment of the present invention, the photoresist stripper composition comprises 0.5 to 5 wt% of a secondary amine having a boiling point of 100 °C or higher; 40 to 70% by weight of an alcohol compound; 25 to 50% by weight of an aprotic polar solvent; 3 to 10% by weight of an alkanol amine compound; And by including the remainder of deionized water, it may be advantageous in that the time for hard baking at a high temperature can be significantly reduced and damage to the organic insulating film can be minimized. In particular, secondary amines with a boiling point of 100°C or higher can form hydrogen bonds with alcohol compounds and alkanolamine compounds used together in the composition to minimize the amount of volatilization at high temperatures, and the photoresist can be quickly removed through suppression of volatilization It can be done, and it can be particularly advantageous because it does not leave stains and can increase reliability.

In addition, the photoresist stripper composition of the present invention may further include one or more other additives, if necessary, in addition to the above components. For example, it may be a triazole compound as a corrosion inhibitor. The triazole compound is not limited as long as it is a compound clearly known in the art, and specifically, benzotriazole, tolytriazole, carboxybenzotriazole, 1-hydroxylbenzotriazole, nitrobenzotriazole, dihydro Loxylpropylbenzotriazole and the like may be exemplified, but are not limited thereto. Preferably, 1-hydroxylbenzotriazole or dihydroxylpropylbenzotriazole interacts with the photoresist stripper composition of the present invention to more effectively reduce volatility and may be more advantageous in that there is no stain left upon removal of the photoresist. .

In the photoresist stripper composition, the triazole compound may be included in an amount of 0.01 to 5% by weight, but is not limited thereto.

In addition, according to another embodiment of the present invention, it is possible to provide a method of peeling a photoresist by treating the photoresist stripper composition.

The photoresist stripping method includes etching the substrate using a photoresist pattern formed on a substrate including an organic insulating film, a metal wire, or a metal wire and an inorganic material layer as a mask, and stripping with the photoresist stripper composition. ) may be included.

A method of peeling a photoresist from a substrate engraved with a microcircuit pattern using a stripper composition for photoresists according to an embodiment of the present invention involves dipping several sheets of a substrate to be peeled into a large amount of stripper at the same time. Both the dip method and the single-wafer method in which the photoresist is removed by spraying (spraying) the stripper on the substrate one by one can be used, but is not limited thereto

As the type of photoresist that can be removed using the photoresist stripper composition of the present invention, for example, a positive type photoresist, a negative type photoresist, and a positive type/negative type photoresist (dual tone photoresist) are selected. The photoresist may include, but is not limited to, a photoresist that can be particularly effectively applied to a photoresist composed of a photoactive compound including a novolac-based phenol resin and diazonaphthoquinone.

The metal wiring to which the photoresist stripper composition can be applied may include, for example, an Au/Al/Ni/Cr quadruple layer as a lower layer, Cu/dissimilar metal alloy, silver or a silver alloy, etc., which It may be used as a p-electrode and an n-electrode, but is not limited thereto.

Meanwhile, according to another embodiment of the present invention, it is possible to provide a liquid crystal display device or a semiconductor device manufactured by treating the photoresist stripper composition.

In particular, the present invention can provide a liquid crystal display device or a semiconductor device manufactured by a conventional method including the above-described peeling method, that is, a p-n junction device.

Hereinafter, preferred embodiments of the photoresist stripper composition of the present invention and a method for measuring physical properties will be described in detail.

physical property measurement

1) Evaluation of photoresist peeling rate

In order to evaluate the photoresist stripping performance for the photoresist stripper composition prepared as shown in Table 1 below, the photoresist composition was applied to a thickness of 1.5 μm on a glass substrate, and then at 160 ° C and 170 ° C for 10 minutes, respectively. A test specimen was prepared by performing a hard bake (H/B). The time taken for the photoresist to be completely peeled off by the stripper under the spray pressure condition of 0.4 kgf was measured using a single-wafer spray-type stripping equipment maintained at a temperature of 60 °C, and the evaluation results are shown in Table 2 below.

2) Insulation film damage evaluation

A test specimen was prepared by applying a photoresist composition to a thickness of 1.5 μm on a glass substrate and then performing hard bake at 160 °C and 170 °C for 10 minutes, respectively. Using a single-wafer spray-type peeling equipment maintained at 60°C, the photoresist was completely peeled off by the stripper under the spraying pressure condition of 0.4kgf, and then the dried specimen was examined under an optical microscope at 200x magnification and FE at 10K to 50K magnification. -SEM was used to confirm the degree of damage to the insulating film. After confirmation, depending on the degree of damage to the insulating film, if there was no damage to the insulating film, it was indicated as “good”, and if damage to the insulating film was found, it was indicated as “poor”.

3) Volatile amount

To check the volatilization amount of the photoresist composition, 500 g of the photoresist composition was put into a 1L beaker and stored in a water tank at a constant temperature, and the weight was measured after 48 hours to confirm the volatilization amount. When the degree of volatilization is more than 20%, “excessive” is indicated, and when it is less than 20%, “adequate” is indicated.

[Example 1-16, Comparative Example 1-5]

A photoresist stripper composition was prepared by mixing the components and compositions shown in Table 1 below. At this time, the mixing was carried out at room temperature, and after mixing for 1 hour or more so as to be sufficiently dissolved, it was filtered using a Teflon filter.

[Table 1]

<Secondary amine represented by Formula 1>

IPHA: isopropyl hydroxylamine (boiling point: 104°C)

IBHA: isobutyl hydroxylamine (boiling point: 129°C)

<Alcohol compound>

MDG: diethylene glycol monomethyl ether

BDG: Diethylene glycol monobutyl ether

EDG: Diethylene glycol monoethyl ether

THFA: tetraethylhydrofuryl alcohol

EGtBE: ethylene glycol monobutyl ether

DGtBE: diethylene glycol monobutyl ether

<Aprotic polar solvent>

DMSO: dimethyl sulfoxide

NMP: N-methylpyrrolidone

DMPA: N-dimethylpropionamide

DMLA: N-dimethyllactamide

NEP: Ethylpyrrolidone

DMI: 1,3-dimethyl-2-imidazolidinone

<Alkanolamine compound>

MEA: monoethanolamine

MIPA: monoisopropanolamine

AEE: 2-(2-aminoethoxy)-1-ethanol

DEA: diethanolamine

TEA: triethanolamine

NMEA: N-methylaminoethanol

HEP: 1-(2-hydroethyl)piperazine

<Additives>

CHDM: 1,4-cyclohexanedimethanol

TT: tolytriazole.

<Other amines>

DEHA: N,N-diethyl hydroxylamine (boiling point: 127℃)

HA: hydroxylamine (boiling point: 70°C)

[Table 2]

As shown in Table 2 and FIG. 1, it was confirmed that the photoresist stripper composition according to the present invention had remarkably excellent peeling force with respect to the photoresist modified by dry etching. In particular, it was found that the photoresist denatured in a short time could be removed by the strong nucleophilicity and reducing power of the secondary amine represented by Chemical Formula 1, and damage to the organic insulating film did not occur.

In Comparative Examples 1, 2, and 4, the time required to remove the photoresist of the specimen hard-baked at 160° C. was 60 seconds, which was about 6 times longer than that of Examples, and hard-baked at 170° C. It was also found that the time required for one specimen was about 4 times longer. In addition, as in Comparative Example 2, it was found that when an excessive amount of the alcohol compound was used, the organic insulating film was damaged.

Therefore, according to the photoresist stripper composition according to the present invention, the photoresist can be quickly removed without damaging the organic insulating film, and foreign matter and stains are not left during removal, thereby increasing the efficiency and reliability of the process.

Although preferred embodiments of the present invention have been described above, it is clear that the present invention can use various changes and equivalents, and can be equally applied by appropriately modifying the above embodiments. Accordingly, the above description is not intended to limit the scope of the present invention, which is defined by the limits of the following claims.

Claims (8)

one or two amines selected from N-isopropyl hydroxylamine and N-isobutyl hydroxylamine; alcohol compounds; aprotic polar solvents; And an alkanol amine compound; photoresist stripper composition comprising a.
delete The method of claim 1,
The photoresist stripper composition comprises 0.1 to 10 wt% of an amine, which is one or two selected from N-isopropyl hydroxylamine or N-isobutyl hydroxylamine, 30 to 80 wt% of an alcohol compound, and an aprotic polar solvent. A photoresist stripper composition comprising 10 to 60% by weight and 1 to 30% by weight of an alkanol amine compound. The method of claim 1,
The alcohol compound is dimethylene glycol monoethyl ether (dimethylene glycol monoethyl ether), diethylene glycol monoethyl ether (diethylene glycol monoethyl ether), diethylene glycol monopropyl ether (diethylene glycol monopropyl ether), diethylene glycol monobutyl ether ( diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether (dipropylene glycol monobutyl ether), ethylene glycol propyl ether (Ethylene Glycol Propyl Ether), ethylene glycol monobutyl ether (Ethylene Glycol Mono-tert-butyl Ether), and tetrahydrofuryl alcohol (Tetrahydrofurylalcohol) to choose 1 type or 2 or more types A photoresist stripper composition. According to claim 1,
The alkanol amine compound is monoethanolamine (MEA), monoisopropanolamine (MIPA), imidazolidine ethanol (IME), 2-amino-1-propanol, aminoisopropanol (AIP), N-methylaminoethanol (N -MAE), 3-amino-1-propanol, 4-amino-1-butanol, aminoethoxyethanol (AEE), 2-(2-aminoethylamino)-1-ethanol, diethanolamine (DEA), 1 -(2-hydroethyl)piperazine (HEP) and triethanolamine (TEA) 1 type, or 2 or more types of photoresist stripper composition selected from. According to claim 1,
The aprotic polar solvent is N-methylpyrrolidone (NMP), N-methylformamide (NMF), ethylpyrrolidone (NEP), dimethylimidazolidinone (DMI), dimethylsulfoxide (DMSO), N -Dimethylpropionamide (DMPA), N,N-dimethyllactamide (DMLA), and N-methylpropionamide (NMPA) one or two or more types of photoresist stripper composition selected from. According to claim 1,
The photoresist stripper composition further comprises one or two selected from a triazole compound and deionized water. 8. The method of claim 7,
The photoresist stripper composition further comprises 0.01 to 5 wt% of a triazole compound or 1 to 10 wt% of deionized water.

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