KR102398667B1 - 위상 검출 픽셀을 포함하는 이미지 센서 - Google Patents

위상 검출 픽셀을 포함하는 이미지 센서 Download PDF

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KR102398667B1
KR102398667B1 KR1020170069771A KR20170069771A KR102398667B1 KR 102398667 B1 KR102398667 B1 KR 102398667B1 KR 1020170069771 A KR1020170069771 A KR 1020170069771A KR 20170069771 A KR20170069771 A KR 20170069771A KR 102398667 B1 KR102398667 B1 KR 102398667B1
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South Korea
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pixel
phase detection
pixels
shared
ppx
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KR1020170069771A
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English (en)
Korean (ko)
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KR20180133157A (ko
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황민지
이승진
이영우
홍석용
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삼성전자주식회사
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Priority to KR1020170069771A priority Critical patent/KR102398667B1/ko
Priority to US15/870,382 priority patent/US10412349B2/en
Priority to CN201810569718.0A priority patent/CN108989717B/zh
Publication of KR20180133157A publication Critical patent/KR20180133157A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/01—Circuitry for demodulating colour component signals modulated spatially by colour striped filters by phase separation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020170069771A 2017-06-05 2017-06-05 위상 검출 픽셀을 포함하는 이미지 센서 KR102398667B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170069771A KR102398667B1 (ko) 2017-06-05 2017-06-05 위상 검출 픽셀을 포함하는 이미지 센서
US15/870,382 US10412349B2 (en) 2017-06-05 2018-01-12 Image sensor including phase detection pixel
CN201810569718.0A CN108989717B (zh) 2017-06-05 2018-06-05 包括相位检测像素的图像传感器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170069771A KR102398667B1 (ko) 2017-06-05 2017-06-05 위상 검출 픽셀을 포함하는 이미지 센서

Publications (2)

Publication Number Publication Date
KR20180133157A KR20180133157A (ko) 2018-12-13
KR102398667B1 true KR102398667B1 (ko) 2022-05-16

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US (1) US10412349B2 (zh)
KR (1) KR102398667B1 (zh)
CN (1) CN108989717B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102545173B1 (ko) * 2018-03-09 2023-06-19 삼성전자주식회사 위상 검출 픽셀들을 포함하는 이미지 센서 및 이미지 촬상 장치
KR102018984B1 (ko) * 2018-05-15 2019-09-05 재단법인 다차원 스마트 아이티 융합시스템 연구단 베이스라인을 증가시키기 위한 카메라 시스템
JP7246176B2 (ja) * 2018-12-12 2023-03-27 キヤノン株式会社 撮像装置
KR102198341B1 (ko) * 2018-12-18 2021-01-04 삼성전자주식회사 전자 장치 및 그 제어 방법
KR102682859B1 (ko) * 2019-03-25 2024-07-09 에스케이하이닉스 주식회사 이미지 처리 시스템, 이미지 센서, 이미지 센서의 구동 방법
KR102684722B1 (ko) * 2019-03-25 2024-07-12 삼성전자주식회사 이미지 센서 및 그 동작 방법
US11921285B2 (en) 2019-04-19 2024-03-05 Arizona Board Of Regents On Behalf Of The University Of Arizona On-chip signal processing method and pixel-array signal
US11910104B2 (en) 2019-04-19 2024-02-20 ARIZONA BOARD OF REGENTS on behalf of THE UNIVERSITY OF ARIZONA, A BODY CORPORATE All-in-focus imager and associated method
US11297219B2 (en) * 2019-06-11 2022-04-05 Samsung Electronics Co., Ltd. Image sensor
CN110248095B (zh) * 2019-06-26 2021-01-15 Oppo广东移动通信有限公司 一种对焦装置、对焦方法及存储介质
KR20210047738A (ko) * 2019-10-22 2021-04-30 삼성전자주식회사 복수의 af 픽셀 그룹들을 포함하는 이미지 센서
KR20210047687A (ko) * 2019-10-22 2021-04-30 삼성전자주식회사 위상 검출 픽셀을 포함하는 이미지 센서
KR20210054092A (ko) 2019-11-04 2021-05-13 삼성전자주식회사 서로 거울 대칭인 픽셀들을 포함하는 이미지 센서
US20220052090A1 (en) * 2020-08-17 2022-02-17 Au Optronics Corporation Sensing device
KR20220072116A (ko) 2020-11-24 2022-06-02 삼성전자주식회사 이미지 센서
US11810928B2 (en) * 2021-05-17 2023-11-07 Omnivision Technologies, Inc. CMOS image sensor with LED flickering reduction and low color cross-talk
KR20230056858A (ko) * 2021-10-20 2023-04-28 삼성전자주식회사 이미지 센서
US11736821B1 (en) * 2022-03-01 2023-08-22 SmartSens Technology (HK) Co., Ltd. Four shared pixel with phase detection and horizontal and vertical binning readout modes

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KR20180133157A (ko) 2018-12-13
CN108989717B (zh) 2021-11-02
US20180352199A1 (en) 2018-12-06
US10412349B2 (en) 2019-09-10
CN108989717A (zh) 2018-12-11

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