KR102356415B1 - Method for producing at least one recess in a material by means of electromagnetic radiation and subsequent etching process - Google Patents

Method for producing at least one recess in a material by means of electromagnetic radiation and subsequent etching process Download PDF

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KR102356415B1
KR102356415B1 KR1020217005915A KR20217005915A KR102356415B1 KR 102356415 B1 KR102356415 B1 KR 102356415B1 KR 1020217005915 A KR1020217005915 A KR 1020217005915A KR 20217005915 A KR20217005915 A KR 20217005915A KR 102356415 B1 KR102356415 B1 KR 102356415B1
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recess
etching
transparent
introducing
different
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KR20210024689A (en
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로만 오슈트홀트
노르베르트 암브로지우스
아르네 슈노어
다니엘 둔커
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엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • B23K26/402Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/1433Structure of nozzle plates
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    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
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    • B41J2/135Nozzles
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    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B1/00Devices without movable or flexible elements, e.g. microcapillary devices
    • B81B1/002Holes characterised by their shape, in either longitudinal or sectional plane
    • B81B1/004Through-holes, i.e. extending from one face to the other face of the wafer
    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00087Holes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00103Structures having a predefined profile, e.g. sloped or rounded grooves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595Control etch selectivity
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54Glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/05Microfluidics
    • B81B2201/052Ink-jet print cartridges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/05Microfluidics
    • B81B2201/058Microfluidics not provided for in B81B2201/051 - B81B2201/054
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/03Static structures
    • B81B2203/0353Holes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/03Static structures
    • B81B2203/0369Static structures characterized by their profile
    • B81B2203/0392Static structures characterized by their profile profiles not provided for in B81B2203/0376 - B81B2203/0384
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128Processes for removing material
    • B81C2201/013Etching
    • B81C2201/0133Wet etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128Processes for removing material
    • B81C2201/0143Focussed beam, i.e. laser, ion or e-beam

Abstract

본 발명은 투명한 또는 투과성 유리 기판 (2) 안으로 적어도 하나의 관통구멍 (1) 을 도입하기 위한 방법에 관한 것이며, 상기 유리 기판 (2) 은 전자기 방사선, 특히 레이저를 이용해 빔축 (s) 을 따라 선택적으로 변조된다. 상기 변조들이 유리 기판 (2) 안에서 빔축 (s) 을 따라, 서로 다른 특성들을 갖는 전자기 방사선에 의해, 예컨대 서로 다른 펄스 에너지에 의해, 생성됨으로써, 상기 유리 기판 (2) 안의 에칭공정이 비균질하게 서로 다른 에칭률들로 진행된다. 이를 통해, 상기 투명한 또는 투과성 재료 안에서 에칭 처리를 근거로 생기는 관통구멍 (1) 을 타겟팅하여 그리고 선택적으로 상기 변조들의 서로 다른 특성들을 통해 형성하는 그리고 예컨대 상기 관통구멍 (1) 의 원뿔각도 (α, β) 를 변화시키는 가능성이 만들어내진다.The present invention relates to a method for introducing at least one through-hole (1) into a transparent or transmissive glass substrate (2), said glass substrate (2) selectively using electromagnetic radiation, in particular a laser, along a beam axis (s) is modulated to The modulations are generated in the glass substrate 2 along the beam axis s by electromagnetic radiation having different properties, for example by different pulse energies, such that the etching process in the glass substrate 2 is non-homogeneously with each other. It goes with different etch rates. Thereby, in the transparent or transmissive material, a through-hole (1) resulting on the basis of an etching process is targeted and optionally formed via the different properties of the modulations and, for example, the cone angle (α, The possibility of changing β) is created.

Figure 112021023164643-pat00008
Figure 112021023164643-pat00008

Description

전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법{METHOD FOR PRODUCING AT LEAST ONE RECESS IN A MATERIAL BY MEANS OF ELECTROMAGNETIC RADIATION AND SUBSEQUENT ETCHING PROCESS}METHOD FOR PRODUCING AT LEAST ONE RECESS IN A MATERIAL BY MEANS OF ELECTROMAGNETIC RADIATION AND SUBSEQUENT ETCHING PROCESS

본 발명은 투명한 또는 투과성의, 특히 판 모양의, 재료 안으로 적어도 하나의 리세스, 특히 관통구멍을 도입하기 위한 방법에 관한 것이며, 상기 재료는 전자기 방사선, 특히 레이저를 이용해 빔축 (beam axis) 을 따라 선택적으로 변조되고, 상기 리세스들은 후속하여 에칭공정에 의해 생성되고, 변조된 영역에서 그리고 변조되지 않은 영역들에서 서로 다른 에칭률들 (etching rates) 이 나타난다.The present invention relates to a method for introducing at least one recess, in particular a through-hole, into a transparent or transmissive, in particular plate-shaped, material, wherein the material is formed along a beam axis with electromagnetic radiation, in particular a laser. Selectively modulated, the recesses are subsequently created by an etching process, resulting in different etching rates in the modulated and unmodulated regions.

WO 2016/041544 A1 은 판 모양의 작업물 안으로, 특히 관통구멍으로서의, 적어도 하나의 리세스를 도입하기 위한 이러한 방법을 공개한다. 이를 위해 레이저 방사선이 상기 작업물의 표면으로 향하게 된다. 상기 레이저 방사선의 작용 시간이 매우 짧게 선택되고, 따라서 다만 상기 작업물의 변조가 상기 레이저 광선의 빔축 둘레로 동심적으로 발생한다. 다음 방법단계에서, 에칭제의 작용을 근거로 순차적으로 에칭에 의해, 먼저 레이저 광선에 의해 변조를 경험한 상기 작업물의 영역들에서 이방성 (anisotropic) 재료제거가 발생한다. 이를 통해, 원통 모양의 작용 구역을 따라 리세스가 관통구멍으로서 상기 작업물 안에 생긴다. 특히 제 1 단계에서 생성된 결손 부위들이 순차적으로 확대되고, 이로써 리세스 또는 관통구멍이 생성될 수 있다. 이 방법의 본질적인 장점은, 변조 구역이 본질적으로 원통 모양으로 빔축에 대해 동축적으로 연장되고, 이렇게 관통구멍의 또는 리세스의 일정한 지름을 초래한다는 데에 있다.WO 2016/041544 A1 discloses such a method for introducing at least one recess into a plate-shaped workpiece, in particular as a through-hole. For this purpose, laser radiation is directed at the surface of the workpiece. The duration of action of the laser radiation is chosen to be very short, so that only modulation of the workpiece takes place concentrically around the beam axis of the laser beam. In the next method step, anisotropic material removal takes place by etching sequentially based on the action of the etchant, first in the areas of the workpiece that have undergone modulation by means of a laser beam. In this way, a recess is created in the workpiece as a through-hole along the cylindrical working zone. In particular, the defect regions generated in the first step are sequentially enlarged, thereby creating a recess or a through hole. An essential advantage of this method is that the modulation zone extends coaxially to the beam axis in an essentially cylindrical shape, thus resulting in a constant diameter of the through-hole or of the recess.

제 1 단계에서 유리 작업물로, 포커싱된 레이저 임펄스가 향하게 되고, 그것의 광선 강도는, 유리 안의 한 채널을 따라 국부적인 무열 파괴가 발생할 정도로 강한 방법이 DE 10 2010 025 966 B4 로부터 알려져 있다.It is known from DE 10 2010 025 966 B4 that in a first step a focused laser impulse is directed onto a glass workpiece, the light intensity of which is strong enough to cause localized non-thermal destruction along one channel in the glass.

또한, 필라멘트들의 생성을 통해 유리를 가공하기 위한 방법이 US 2013/126573 A1 로부터 알려져 있다.A method for processing glass through the production of filaments is also known from US 2013/126573 A1.

또한, 유리 안에서 구조들을 생성하기 위해, 오래전부터 에칭방법, 예컨대 리소그래피가 알려져 있다. 이때, 코팅이 조사되고, 후속하여 국부적으로 개방된다. 후속하여, 기판은 원하는 구조들을 생성하기 위해 에칭된다. 상기 코팅은 이때 에칭 레지스트 (etching resist) 로서 쓰인다. 하지만 상기 레지스트가 개방되었던 부위들에서 에칭 부식이 등방성으로 행해지기 때문에, 큰 종횡비 (aspect ratio) 를 갖는 구조들이 생성될 수 없다.Also, for creating structures in glass, etching methods, such as lithography, have long been known. At this time, the coating is irradiated and subsequently opened locally. Subsequently, the substrate is etched to create the desired structures. The coating is then used as an etching resist. However, since etching etching is isotropically performed in the areas where the resist was open, structures having a large aspect ratio cannot be produced.

본 발명의 목적은 뒤따르는 에칭공정에서 리세스들의 원하는, 특히 선택적으로 다른 제거, 및 따라서 특히 서로 다른 개방각도들을 갖는 리세스들도 실현하도록, 전자기 방사선에 의해 재료를 변조하는 가능성을 만들어내는 것이다.It is an object of the invention to create the possibility of modulating the material by means of electromagnetic radiation so as to realize the desired, in particular selectively different removal of the recesses in the subsequent etching process, and thus also recesses with in particular different opening angles. .

이 목적은 본 발명에 따르면 청구항 1 항의 특징들에 따른 방법으로 달성된다. 본 발명의 그 밖의 구현형태는 종속항들에서 도출될 수 있다.This object is achieved according to the invention with a method according to the features of claim 1 . Other implementations of the invention may be derived from the dependent claims.

즉, 본 발명에 따르면, 빔축을 따라 재료 안에서 전자기 방사선에 의해 서로 다른 특성들을 갖는 변조들이, 예컨대 서로 다른 펄스 에너지에 의해, 생성되고, 따라서 상기 재료 안의 에칭공정이 비균질하게 진행되고, 이를 통해 상기 변조된 영역들에서 에칭률이 그 외에는 변경되지 않은 에칭조건들에 있어서 상기 서로 다른 특성들을 갖고 변조된 영역들에서 서로 다른, 방법이 제공된다. 이를 통해, 본 발명에 따르면, 투명한 또는 투과성 재료 안에서 에칭 처리를 근거로 생기는 리세스들을, 특히 관통구멍들을, 타겟팅하여 그리고 선택적으로 상기 변조들의 서로 다른 특성들을 통해 설정하는 가능성이 만들어내진다. 그러므로, 예컨대 상기 리세스의 확대는 보다 긴 에칭 부식 때문에 생기는 것이 아니라, 상기 변조들의 서로 다른 특성들에 의존하여 보다 빨리 진행되는 에칭제거를 근거로 생긴다. 이때, 본 발명에 따르면 원뿔 모양의 확대들만 표면에 가까운 가장자리 영역들에서 생성될 수 있는 것이 아니다. 오히려 반대로 그러한 확대들은, 상기 변조들의 특성들이 재료의 표면들 사이의 영역에서 거기에서 선호되는 에칭제거가 일어나도록 설정됨으로써 예컨대 원통 모양의 또는 볼록한 리세스들을 생성하기 위해, 저지될 수 있다.That is, according to the invention, modulations with different properties are generated by electromagnetic radiation in the material along the beam axis, for example by different pulse energies, so that the etching process in the material proceeds non-homogeneously, through which the A method is provided, wherein the etch rate in modulated regions is different in modulated regions with said different properties under otherwise unchanged etch conditions. In this way, according to the invention, the possibility is created for setting recesses, in particular through-holes, which arise on the basis of an etching process in a transparent or transmissive material, by targeting and optionally via the different properties of the modulations. Thus, for example, the enlargement of the recess does not result from a longer etch etch, but rather on the basis of a faster etch removal depending on the different properties of the modulations. At this time, according to the present invention, not only conical enlargements can be generated in the edge regions close to the surface. On the contrary, such magnifications can be inhibited, for example, in order to create cylindrical or convex recesses, whereby the properties of the modulations are set such that in the region between the surfaces of the material a favorable etch away occurs there.

이때, 상기 변조들의 서로 다른 특성들이 상기 전자기 방사선의 빔 형태 (beam shape) 의 변경을 통해 특히 위상 변조 (phase modulation) 를 이용해 달성되면, 특히 유망하다고 증명되었다. 이를 통해, 특성들의 변경은 상기 재료의 가공 동안 중단이 없는 작업단계에서 수행될 수 있고, 따라서 가공은 가능한 한 원하지 않은 지체 없이 실행될 수 있다.Here, the different properties of the modulations have proven particularly promising if, in particular, using phase modulation is achieved through a change in the beam shape of the electromagnetic radiation. In this way, the change in properties can be carried out in an uninterrupted working step during the processing of the material, so that the processing can be carried out as much as possible without undesirable delays.

또한, 상기 변조들의 서로 다른 특성들이 공정파라미터들의, 특히 초점 위치의, 펄스 에너지의, 빔 형태의 그리고/또는 강도의 변화를 통해 달성되고, 따라서 상기 변화가 공정 운영시 비교적 적은 비용으로 실현될 수 있으면, 마찬가지로 특히 유망하다고 증명되었다.In addition, the different properties of the modulations are achieved through a change in process parameters, in particular of the focal position, of the pulse energy, of the beam shape and/or of the intensity, so that the change can be realized at relatively low cost in operation of the process. If so, it likewise has proven particularly promising.

본 발명의 그 밖의, 마찬가지로 특히 목적에 맞는 구현형태는, 상기 재료의 변조와 에칭 처리로 이루어진 사이클 (cycle) 이 여러 번 실행되는 때에도 달성된다. 즉, 제 1 에칭 처리 후 재료의 재변조가 수행됨으로써, 예컨대 추후처리가 보다 높은 정확성을 갖고 실행될 수 있다. 특히, 작은 에칭률들을 갖는 에칭공정과 관련하여, 이렇게 제거는 타겟팅되어 제어되고, 원하는 목표값들에 도달할시 종료될 수 있다.Other, likewise particularly purposeful implementations of the invention are achieved even when a cycle consisting of modulation and etching of the material is carried out several times. That is, the re-modulation of the material is performed after the first etching treatment, so that, for example, the post-processing can be performed with higher accuracy. In particular, with respect to etch processes with small etch rates, such removal can be targeted, controlled, and terminated when desired target values are reached.

이때, 다수의 에칭단계가, 특히 서로 다른 에칭조건들을 갖고, 실행되고, 따라서 한편으로는 제거 성능에 있어서의 최적과 다른 한편으로는 달성 가능한 정확성에 도달하면, 특히 목적에 맞는다고 증명되었다.Here, a number of etching steps have proven particularly fit for purpose, especially if they are carried out, with different etching conditions, and thus reach an optimum in the removal performance on the one hand and an achievable accuracy on the other hand.

또한, 상기, 특히 판 모양의, 재료의 한 표면이 에칭 레지스트로 적어도 일부 섹션에서 덮히고, 이를 통해 뒤따르는 에칭방법에서 에칭 부식으로부터 보호되면 유리하다고 이미 증명되었다. 이를 통해, 에칭률은 일측 에칭 부식을 통해 타겟팅되어 자유 표면에 집중될 수 있고, 상기 자유 표면에서는 강화된 제거가 바람직하다.It has also already proven advantageous if one surface of the material, in particular plate-shaped, is covered at least in some sections with an etching resist, thereby being protected from etching corrosion in subsequent etching methods. This allows the etch rate to be targeted through a one-sided etch erosion and concentrated on the free surface, where enhanced removal is desired.

특히 바람직하게는, 공정파라미터들의 선택을 통해, 특히 5°보다 작은, 개방각도, 또는 상기 리세스의 지름이 임의적으로 설정될 수 있고, 이때 개방각도들의 차이는 서로 다른 특성들을 갖는 상기 변조들을 근거로 10°를 초과할 수 있다.Particularly preferably, the opening angle or the diameter of the recess can be arbitrarily set, in particular smaller than 5°, through the selection of process parameters, wherein the difference between the opening angles is based on the modulations having different properties. may exceed 10°.

또한, 리세스들은 상기 리세스들의 지름 및/또는 형태가 최대 3㎛ 만큼 서로 다르도록 생성될 수 있다.Further, the recesses may be created such that the diameter and/or shape of the recesses differ from each other by up to 3 μm.

판 모양의, 상기 전자기 방사선에 대해 투명한 또는 투과성 재료로서는, 여러 가지 재료들이 사용될 수 있고, 이때 상기 특히 판 모양의 재료는 바람직하게는 본질적인 재료 부분으로서 유리, 규소 및/또는 청옥을 구비하고, 이를 통해, 다양한 기술적 이용 목적들을 위해 최적으로 적합한, 탁월한 물리적 및 화학적 저항성을 갖는다.As plate-shaped, transparent or transmissive material to electromagnetic radiation, various materials can be used, wherein said in particular plate-shaped material preferably has glass, silicon and/or sapphire as essential material parts, Through this, it has excellent physical and chemical resistance, which is optimally suitable for various technical application purposes.

본 발명은 특정 적용영역들에 제한되지 않는다. 특히 바람직하게는, 인쇄 장치의 노즐판 (nozzle plate) 으로서의, 상기 방법에 따라 제조된 판 모양의 재료의 사용이 제공된다.The invention is not limited to specific areas of application. Particularly preferably, there is provided the use of the plate-shaped material produced according to the method as a nozzle plate of a printing apparatus.

본 발명은 여러 가지 실시형태들을 허용한다. 그것의 기본 원리를 더욱 명료하게 하기 위해 실시형태들 중 하나가 도면에 도시되고, 하기에서 기술된다.The present invention allows for several embodiments. In order to make the basic principle thereof more clear, one of the embodiments is shown in the drawings and described below.

도 1 에서는 관통구멍들이 마련된 유리 기판의 절단된 측면도를 개략도로 나타내고;
도 2 에서는 서로 다른 변조 타입들을 개략도로 나타내고;
도 3 에서는 에칭 레지스트를 사용할 때의 여러 가지 방법단계들을 개략도로 나타낸다.
1 schematically shows a cut side view of a glass substrate provided with through holes;
2 schematically shows the different modulation types;
3 schematically shows various method steps when using an etching resist.

도 1 은 본 발명에 따른 방법에 따라 제조된, 관통구멍 (1) 이 마련된 재료로서의 유리 기판 (2) 의 절단된 측면도를 나타낸다. 제조방법에 있어서의 본 발명의 본질적인 장점은 유리 기판 (2) 안의 관통구멍 (1) 의 원뿔각도 (α, β) 의 개개의 그리고 설정 가능한 변화에 관한 것이다.1 shows a cutaway side view of a glass substrate 2 as a material provided with through-holes 1, manufactured according to a method according to the invention. An essential advantage of the invention in its manufacturing method relates to the individual and settable variation of the cone angles α, β of the through-holes 1 in the glass substrate 2 .

알아볼 수 있는 바와 같이, 본 발명에 따른 방법으로 처음으로, 상기 재료의 각각의 외면들과 관련하여 한편으로는 2°미만의 작은 원뿔각도 (α) 를 갖는, 다른 한편으로는 마주 보고 있는 측에서 약 20°의 큰 원뿔각도 (β) 를 갖는 관통구멍들 (1) 이 유리 기판 (2) 에 마련된다.As can be seen, for the first time with the method according to the invention, with respect to the respective outer surfaces of the material on the one hand a small cone angle α of less than 2°, on the other hand on the opposite side Through-holes 1 having a large cone angle β of about 20° are provided in the glass substrate 2 .

이를 위해, 제 1 단계에서 예컨대 100 ㎛ 두께의 유리가 유리 기판 (2) 으로서 레이저 시스템의 방사선으로 변조된다. 상기 유리 안으로 도입되는 전력에 따라, 유리 기판 (2) 의 서로 다른 강도의 변조들이 설정될 수 있다.To this end, in a first step, for example, 100 μm thick glass is modulated with the radiation of the laser system as glass substrate 2 . Depending on the power introduced into the glass, different intensity modulations of the glass substrate 2 can be set.

이하, 도 2 에 도시된 서로 다른 변조들은 “타입 I”또는 “타입 II”라 불린다. 이때 “타입 I”변조는 상기 유리의 보다 적은 변경을 나타내고, 상기 변경은 마찬가지로 보다 적은 레이저 전력에 의해 생성된다. “타입 II”변조들은 상응하여 상기 유리 구조의 강한 변경들이고, 보다 높은 레이저 전력에 의해 초래된다.Hereinafter, the different modulations shown in FIG. 2 are referred to as “Type I” or “Type II”. A “Type I” modulation here indicates less alteration of the glass, and the alteration is likewise produced by less laser power. “Type II” modulations are correspondingly strong modifications of the glass structure, brought about by higher laser power.

시설의 매우 높은 포지셔닝 정확성을 통해, 광학적 보조 수단을 통해 길이가 늘려진 레이저의 초점 거리뿐만 아니라 유리 기판 (2) 안의 초점 거리 위치도 매우 정확히 규정될 수 있다.With the very high positioning accuracy of the facility, not only the focal length of the laser lengthened by means of optical aids but also the focal length position in the glass substrate 2 can be defined very precisely.

원칙적으로, 도 2 에서 왼쪽에 도시된 변화에서의 “타입 I”과 “타입 II”변조들은 2개 또는 그보다 많은 레이저 펄스들 (LP1, LP2) 로 달성될 수 있고 또는 상응하여 오른쪽에 도시된 변화에서의 변조는 하나의 유일한 레이저 펄스로 달성될 수 있다.In principle, “Type I” and “Type II” modulations in the variation shown on the left in FIG. 2 can be achieved with two or more laser pulses LP1, LP2 or correspondingly the variation shown on the right Modulation in α can be achieved with one and only one laser pulse.

“타입 I”변조 (적은 전력) 로부터 “타입 II”변조 (높은 전력) 로의 전이는 이렇게 이미 하나의 개별적인 펄스를 통해 전력 프로파일을 고려하여 레이저의 확산 방향을 따라 실현될 수 있다.The transition from “Type I” modulation (low power) to “Type II” modulation (high power) can thus already be realized along the diffusion direction of the laser taking into account the power profile via one individual pulse.

이 효과를 강화하기 위해 그리고 두 변조 타입들 사이의 차이를 높이기 위해, 전체 유리를 따른 제 1 균일한 “타입 I”변조 후에, 높아진 전력의 그리고 변경된 초점 거리 위치를 갖는 제 2 펄스가 사용될 수 있다.To enhance this effect and to increase the difference between the two modulation types, after a first uniform “Type I” modulation along the entire glass, a second pulse of increased power and with an altered focal length position can be used. .

도 3 에 도시된 제 2 공정단계에서, 상기 유리 기판의 일측은 플루오르화수소산에 저항성이 있는 커버, 예컨대 에칭 레지스트 (R) 로서의 접착 필름으로 덮히고, 따라서 뒤따르는 에칭단계 (a) 에서 변조의 단지 하나의 타입만 에칭된다. 공정단계 (b) 에서 에칭 레지스트 (R) 를 제거한 후, 다시 에칭단계 (b) 가 수행되고, 이를 통해 상기 유리 기판의 양측 에칭이 달성된다. 변화들 (I, II) 은 에칭 레지스트 (R) 의 배열에 의해 구별되고, 반면 변화 (III) 에서는 에칭 레지스트가 생략된다.In the second process step shown in Fig. 3, one side of the glass substrate is covered with a cover resistant to hydrofluoric acid, such as an adhesive film as an etching resist (R), so that in the subsequent etching step (a), the modulation Only one type is etched. After removing the etching resist (R) in the process step (b), the etching step (b) is performed again, whereby both sides of the glass substrate are etched. The variations (I, II) are distinguished by the arrangement of the etching resist (R), whereas in the variation (III) the etching resist is omitted.

두 변조 타입들이 서로 다른 속도로 플루오르화수소산에서 에칭되기 때문에, 그로부터 도 1 에 도시된, 서로 다른 원뿔각도들 (α, β) 이 발생한다. 우선 일측이 미리 에칭됨으로써, 구멍 지름의 일측 차이가 설정될 수 있다.Since the two modulation types are etched in hydrofluoric acid at different rates, different cone angles (α, β), shown in FIG. 1 , result therefrom. First, one side is etched in advance, so that one side difference in hole diameter can be set.

제 2 에칭단계에서 관통구멍들 (1) 이 확대될 수 있다. 도시된 도식에 상응하여, 이렇게 임의적으로 여러 가지 지오메트리들이 실현될 수 있다.In the second etching step, the through holes 1 may be enlarged. Corresponding to the schematic shown, thus arbitrarily different geometries can be realized.

에칭제로서는 다음의 웨트 케미컬 (wet-chemical) 용액들이 실현되었다:The following wet-chemical solutions were realized as etchants:

플루오르화수소산:Hydrofluoric acid:

- 농도: 1 -20 %- Concentration: 1 -20 %

- 온도: 5 - 40℃- Temperature: 5 - 40℃

- 제 2 산 : H2SO4, HCL, H3PO4- Second acid: H2SO4, HCL, H3PO4

수산화칼륨:Potassium hydroxide:

- 농도: 10 - 60 %- Concentration: 10 - 60 %

- 온도: 85 - 160℃- Temperature: 85 - 160℃

선행기술과 달리, 이렇게 서로 다른 원뿔각도들 (α, β) 과 구멍 지름들이 유리 기판 (2) 의 양측에서 설정될 수 있다. 이렇게 관통구멍들 (1) 의 개개의 지오메트리들이 제조될 수 있고, 이때 특히 레이저 천공에 의한, 선행기술에 따르면 불가피한 미세균열들이 있을 수 없다. 특히, 관통구멍들 (1) 의 원뿔각도 (α, β) 는 상기 기판 재료의 횡단면에 있어서 가변적일 수 있다. 예컨대, 이로 인해 미세유체역학을 위한 구성요소들의 제조를 위한 장점들이 발생한다.Unlike the prior art, in this way different cone angles (α, β) and hole diameters can be set on both sides of the glass substrate 2 . The individual geometries of the through-holes 1 can thus be produced, in which case microcracks cannot be unavoidable according to the prior art, in particular by laser drilling. In particular, the cone angles α, β of the through holes 1 can be variable in the cross section of the substrate material. For example, this results in advantages for the manufacture of components for microfluidics.

본 발명에 따르면, 빔축 (s) 을 따라 상기 유리 안에서 서로 다른 특성들을 갖는 다수의 변조가 생성될 수 있고, 예컨대 관통하는 변조, 및 작은 기포들의 체인들 (chains) 이 생성될 수 있다. 이를 통해, 에칭 부식이 변조 길이에 걸쳐 비균질해지고, 즉 특히 일정한 에칭조건들하에서 에칭률이 서로 달라진다.According to the invention, multiple modulations with different properties can be produced in the glass along the beam axis s, eg penetrating modulations, and chains of small bubbles. In this way, the etch erosion becomes non-homogeneous over the modulation length, ie the etch rate differs, particularly under constant etch conditions.

이때, 다음의 양상들이 본 발명에 따라 유리한 방식으로 실현될 수 있다:In this case, the following aspects may be realized in an advantageous manner according to the invention:

Figure 112021023164643-pat00001
여러 가지 영역들에서 에칭조건들의 변경
Figure 112021023164643-pat00001
Change of etching conditions in various areas

Figure 112021023164643-pat00002
양측 또는 일측 에칭 (에칭 레지스트)
Figure 112021023164643-pat00002
Double-sided or one-sided etching (etch resist)

Figure 112021023164643-pat00003
노즐판으로서의 사용
Figure 112021023164643-pat00003
Use as a nozzle plate

Figure 112021023164643-pat00004
모든 구멍들이 동일함, 정확성 < 3㎛
Figure 112021023164643-pat00004
All holes are identical, accuracy < 3㎛

Figure 112021023164643-pat00005
개방각도 < 5°
Figure 112021023164643-pat00005
Opening angle < 5°

Figure 112021023164643-pat00006
개방각도들의 차이 > 10°
Figure 112021023164643-pat00006
Difference in opening angles > 10°

Figure 112021023164643-pat00007
위상 변조 (공간적 광변조기, SLM) 를 이용해 또는 공정파라미터들 (초점 위치, 강도 등등) 을 이용해 서로 다른 변조들이 실현됨
Figure 112021023164643-pat00007
Different modulations are realized using phase modulation (spatial light modulator, SLM) or using process parameters (focal position, intensity, etc.)

가공은 하기에서 도면과 관련하여, 윗 영역에서는 약 15°의 원뿔각도 (α) 를 갖고 그리고 아래 영역에서는 약 2°의 원뿔각도 (β) 를 갖고 관통구멍의 내부에서 2개의 서로 다른 원뿔각도들 (α, β) 을 생성하기 위한 공정순서의 방법예를 근거로 상세히 설명된다. 우선, 서로 다른 펄스 에너지를 갖는 2개의 레이저 펄스들로 레이저 구조화가 수행되고, 이를 통해 유리 기판 (2) 의 전체 두께를 통한 변조들 및 추가적으로 작은 기포들의 체인이 유리 기판 (2) 의 윗 부분에 생성된다.Machining, with reference to the drawings below, has a cone angle α of about 15° in the upper region and a cone angle β of about 2° in the lower region two different cone angles in the interior of the through hole. It will be described in detail based on a method example of a process sequence for generating (α, β). First, laser structuring is performed with two laser pulses with different pulse energies, whereby modulations through the entire thickness of the glass substrate 2 and additionally a chain of small bubbles are applied to the upper part of the glass substrate 2 . is created

후속하여, 유리 기판 (2) 은 플루오르화수소산에 저항성이 있는 필름으로 일측이 코팅 처리되고, 홀딩 프레임 안에 고정된다. 그 후, 상기 필름으로부터 보호되지 않은 측의 에칭이 플루오르화수소산 (1 내지 20%의 HF) 에서 5℃ 와 30℃ 사이의 온도에서 5 내지 60분 동안 수행된다.Subsequently, the glass substrate 2 is coated on one side with a film resistant to hydrofluoric acid, and fixed in a holding frame. After that, etching of the unprotected side from the film is carried out in hydrofluoric acid (1 to 20% HF) at a temperature between 5° C. and 30° C. for 5 to 60 minutes.

그 후, 도입되어야 하는 리세스의 영역을 보호하는 필름의 영역이 제거되고, 예컨대 UV-Release-Tape 로서 실시된 필름에 있어서는 UV 빛으로 조사되거나 또는 Heat-Release-Tape 로서 실시된 필름에 있어서는 열로 처리된다. 상기 필름은 상기 도입되어야 하는 리세스의 가장자리 영역에 머무르고, 이를 통해 유리 기판 (2) 의 취급이 개선된다. 뒤따르는 재(再)에칭공정 후 상기 필름은 완전히 제거된다.Thereafter, the region of the film protecting the region of the recess to be introduced is removed, for example irradiated with UV light in the case of a film implemented as UV-Release-Tape or by heat in the case of a film implemented as a Heat-Release-Tape. processed The film remains in the region of the edge of the recess to be introduced, whereby handling of the glass substrate 2 is improved. After the subsequent re-etching process, the film is completely removed.

상기 필름 대신에 예컨대 크롬을 이용한 코팅도 실행될 수 있고, 이때 제 1 에칭조 (etching bath) 는, 상기 코팅이 다음 에칭조에서 비로소 제거되도록 설정된다.Instead of the film, a coating can also be carried out, for example with chromium, wherein a first etching bath is set so that the coating is only removed in the next etching bath.

또한, 예컨대 선행하는 에칭 처리 후, 그 밖의 레이저 변조 및 일측 또는 양측 에칭 처리도 수행될 수 있다.Further, for example, after the preceding etching treatment, other laser modulation and one or both side etching treatments may also be performed.

100㎛ 보다 작은 두께를 갖는 매우 얇은 유리 기판들 (2) 은 개선된 취급을 위해 공정 동안 바람직하게는 웨이퍼 프레임 (wafer frame) 안에 고정되고, 예컨대 상기 웨이퍼 프레임 위에 부착된다.Very thin glass substrates 2 having a thickness of less than 100 mu m are preferably fixed in a wafer frame during processing for improved handling, eg attached onto the wafer frame.

Claims (9)

투명한 또는 투과성 재료 안으로 적어도 하나의 리세스 (recess) 를 도입하기 위한 방법으로서,
전자기 방사선을 이용해 상기 재료는 빔축 (beam axis, s) 을 따라 선택적으로 변조되고, 상기 리세스들은 후속하여 하나 또는 다수의 에칭단계에 의해 생성되고, 변조된 영역에서 그리고 변조되지 않은 영역들에서 서로 다른 에칭률들이 나타나고,
동일한 상기 빔축 (s) 을 따라 상기 재료 안에서 상기 전자기 방사선에 의해 서로 다른 특성들을 갖는 변조들이 생성되고, 따라서 상기 재료 안의 에칭공정은 비균질하게 진행되고, 상기 에칭률들은, 에칭조건들이 변경되지 않는 조건 하에서, 다른 특성들로 변조된 영역들마다 서로 다르고,
다른 특성들로 변조된 영역들의 서로 다른 상기 에칭률들은, 상기 리세스들이 상기 투명한 또는 투과성 재료의 표면에 형성된 원뿔 모양으로 확대되는 형상을 갖고, 상기 리세스들이 상기 투명한 또는 투과성 재료 내에 상기 재료의 반대 표면들에서 서로 다른 개방각도들 (α, β) 을 갖도록 하고, 상기 개방각도들 (α, β) 의 차이는 10°를 초과하고,
상기 변조들의 서로 다른 특성들은 위상 변조를 이용해 달성되고, 추가로, 펄스 에너지 및 강도 중 적어도 하나의 공정파라미터들을 변화시킴으로써 달성되는 것을 특징으로 하는, 투명한 또는 투과성 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법.
A method for introducing at least one recess into a transparent or transmissive material, comprising:
With electromagnetic radiation the material is selectively modulated along a beam axis s, the recesses are subsequently created by one or several etching steps, in modulated areas and in unmodulated areas one another Different etch rates appear,
Modulations with different properties are produced by the electromagnetic radiation in the material along the same beam axis s, so that the etching process in the material proceeds non-homogeneously, and the etching rates are such that the etching conditions do not change. different for each region modulated with different characteristics,
The different etch rates of regions modulated with different properties have a shape in which the recesses expand into a cone formed in the surface of the transparent or transmissive material, wherein the recesses are formed in the transparent or transmissive material of the material. to have different opening angles (α, β) on opposite surfaces, the difference between the opening angles (α, β) being greater than 10°,
introducing at least one recess into a transparent or transmissive material, characterized in that the different properties of the modulations are achieved using phase modulation and further achieved by varying the process parameters of at least one of pulse energy and intensity way for.
제 1 항에 있어서,
상기 변조들의 서로 다른 특성들은 초점 위치의 공정파라미터를 추가로 변화시킴으로써 달성되는 것을 특징으로 하는, 투명한 또는 투과성 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법.
The method of claim 1,
The method for introducing at least one recess into a transparent or transmissive material, characterized in that the different properties of the modulations are achieved by further changing the process parameter of the focal position.
제 1 항에 있어서,
상기 재료의 변조와 에칭 처리로 이루어진 사이클이 여러 번 실행되는 것을 특징으로 하는, 투명한 또는 투과성 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법.
The method of claim 1,
A method for introducing at least one recess into a transparent or transmissive material, characterized in that a cycle consisting of modulation and etching of the material is carried out several times.
제 1 항에 있어서,
다수의 에칭단계가 서로 다른 에칭조건들을 갖고 실행되는 것을 특징으로 하는, 투명한 또는 투과성 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법.
The method of claim 1,
A method for introducing at least one recess into a transparent or transmissive material, characterized in that a plurality of etching steps are carried out with different etching conditions.
제 1 항에 있어서,
재료의 한 표면이 에칭 레지스트 (etching resist) 로 적어도 일부 섹션에서 덮히고, 이를 통해 뒤따르는 에칭방법에서 에칭 부식으로부터 보호되는 것을 특징으로 하는, 투명한 또는 투과성 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법.
The method of claim 1,
for introducing at least one recess into a transparent or transmissive material, characterized in that one surface of the material is covered at least in some sections with an etching resist, thereby being protected from etching corrosion in subsequent etching methods Way.
제 5 항에 있어서,
판 모양의 재료의 표면이 에칭 레지스트 (etching resist) 로 덮히는 것을 특징으로 하는, 투명한 또는 투과성 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법.
6. The method of claim 5,
A method for introducing at least one recess into a transparent or transmissive material, characterized in that the surface of the plate-shaped material is covered with an etching resist.
제 2 항에 있어서,
상기 공정파라미터들의 선택을 통해 상기 개방각도들 (α, β) 및 상기 리세스의 지름 중 적어도 하나가 설정되는 것을 특징으로 하는, 투명한 또는 투과성 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법.
3. The method of claim 2,
A method for introducing at least one recess into a transparent or transmissive material, characterized in that at least one of the opening angles (α, β) and the diameter of the recess are set through the selection of the process parameters.
제 7 항에 있어서,
상기 개방각도들 (α, β) 의 차이는 서로 다른 특성들을 갖는 상기 변조들에 의한 것을 특징으로 하는, 투명한 또는 투과성 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법.
8. The method of claim 7,
A method for introducing at least one recess into a transparent or transmissive material, characterized in that the difference in the opening angles (α, β) is due to the modulations having different properties.
제 1 항 내지 제 8 항 중 어느 한 항에 따른 방법을 통해 제조된 판 모양의 재료로 만들어진 노즐판 (nozzle plate) 을 갖는 인쇄 장치.A printing apparatus having a nozzle plate made of a plate-shaped material manufactured through the method according to any one of claims 1 to 8.
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