KR102356126B9 - 뉴럴 네트워크를 이용한 플래시 메모리의 읽기 기준 전압 추정 방법 및 그 장치 - Google Patents

뉴럴 네트워크를 이용한 플래시 메모리의 읽기 기준 전압 추정 방법 및 그 장치

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Publication number
KR102356126B9
KR102356126B9 KR1020190108027A KR20190108027A KR102356126B9 KR 102356126 B9 KR102356126 B9 KR 102356126B9 KR 1020190108027 A KR1020190108027 A KR 1020190108027A KR 20190108027 A KR20190108027 A KR 20190108027A KR 102356126 B9 KR102356126 B9 KR 102356126B9
Authority
KR
South Korea
Prior art keywords
neural network
reference voltages
flash storage
read reference
estimating
Prior art date
Application number
KR1020190108027A
Other languages
English (en)
Other versions
KR20210026767A (ko
KR102356126B1 (ko
Inventor
하정석
한석주
오지은
Original Assignee
한국과학기술원
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Application filed by 한국과학기술원 filed Critical 한국과학기술원
Priority to KR1020190108027A priority Critical patent/KR102356126B1/ko
Publication of KR20210026767A publication Critical patent/KR20210026767A/ko
Application granted granted Critical
Publication of KR102356126B1 publication Critical patent/KR102356126B1/ko
Publication of KR102356126B9 publication Critical patent/KR102356126B9/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Computing Systems (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Artificial Intelligence (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Health & Medical Sciences (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
KR1020190108027A 2019-09-02 2019-09-02 뉴럴 네트워크를 이용한 플래시 메모리의 읽기 기준 전압 추정 방법 및 그 장치 KR102356126B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020190108027A KR102356126B1 (ko) 2019-09-02 2019-09-02 뉴럴 네트워크를 이용한 플래시 메모리의 읽기 기준 전압 추정 방법 및 그 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190108027A KR102356126B1 (ko) 2019-09-02 2019-09-02 뉴럴 네트워크를 이용한 플래시 메모리의 읽기 기준 전압 추정 방법 및 그 장치

Publications (3)

Publication Number Publication Date
KR20210026767A KR20210026767A (ko) 2021-03-10
KR102356126B1 KR102356126B1 (ko) 2022-01-27
KR102356126B9 true KR102356126B9 (ko) 2023-03-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190108027A KR102356126B1 (ko) 2019-09-02 2019-09-02 뉴럴 네트워크를 이용한 플래시 메모리의 읽기 기준 전압 추정 방법 및 그 장치

Country Status (1)

Country Link
KR (1) KR102356126B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102484073B1 (ko) * 2021-11-22 2023-01-02 삼성전자주식회사 스토리지 시스템
KR20230116566A (ko) 2022-01-28 2023-08-04 에스케이하이닉스 주식회사 메모리 장치의 읽기 기준 전압 결정 장치 및 그 동작 방법
KR20240070026A (ko) 2022-11-14 2024-05-21 연세대학교 산학협력단 심층 신경망을 위한 비휘발성 메모리 장치 및 이의 신뢰도 향상 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090016945A (ko) * 2007-08-13 2009-02-18 삼성전자주식회사 읽기동작타임을 줄일 수 있는 플래시 메모리 시스템 및그것의 읽기 동작 방법
KR102643916B1 (ko) * 2016-10-18 2024-03-08 삼성전자주식회사 스토리지 장치, 메모리 시스템, 및 그것의 읽기 전압 결정 방법
KR101852116B1 (ko) 2016-11-15 2018-04-25 재단법인대구경북과학기술원 디노이징 장치 및 노이즈 제거 방법
KR20180070974A (ko) * 2016-12-19 2018-06-27 삼성전자주식회사 비휘발성 메모리의 리드 동작 방법, 비휘발성 메모리를 포함하는 메모리 시스템 및 이의 동작 방법
KR101945918B1 (ko) * 2017-04-28 2019-02-08 서울대학교산학협력단 메모리의 쓰기를 제어하는 뉴럴네트워크 수행 방법 및 장치
KR102526650B1 (ko) * 2017-05-25 2023-04-27 삼성전자주식회사 뉴럴 네트워크에서 데이터를 양자화하는 방법 및 장치
KR102532748B1 (ko) * 2017-09-08 2023-05-16 삼성전자주식회사 뉴럴 네트워크 학습 방법 및 장치
KR102563752B1 (ko) * 2017-09-29 2023-08-04 삼성전자주식회사 뉴럴 네트워크를 위한 트레이닝 방법, 뉴럴 네트워크를 이용한 인식 방법 및 그 장치들
KR20190062283A (ko) * 2017-11-28 2019-06-05 한국전자통신연구원 선택적 손실 함수를 이용한 생성적 적대 네트워크의 학습을 위한 방법 및 장치

Also Published As

Publication number Publication date
KR20210026767A (ko) 2021-03-10
KR102356126B1 (ko) 2022-01-27

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