KR102350035B1 - Conductive structure, Touch panel and method for manufacturing the same - Google Patents

Abstract

The present application relates to a conductive structure and a method for manufacturing the same, and in particular, the conductive structure according to an embodiment of the present invention includes a substrate; a conductive layer comprising copper; an upper blackening layer formed on the upper surface of the conductive layer and including copper oxynitride; and a lower blackening layer formed on a lower surface of the conductive layer and including the copper oxynitride. According to the conductive structure and its manufacturing method according to an embodiment of the present invention, since it is possible to manufacture a conductive structure including a conductive layer that can replace the conventional ITO electrode, a conductive structure with lower resistance and lower cost than ITO It is possible to manufacture, and in particular, since the blackening layer is included, the hiding property of the conductive layer can be improved.

Description

Conductive structure and manufacturing method thereof {Conductive structure, Touch panel and method for manufacturing the same}

The present application relates to a conductive structure and a method for manufacturing the same, and more particularly, to a conductive structure capable of improving the hiding properties of a conductive layer including a blackening layer, and a method for manufacturing the same.

Transparent electrodes are variously used in various display electrodes, photoelectric conversion elements such as solar cells, and touch panels, and are manufactured by forming a transparent conductive thin film on a transparent substrate such as glass or transparent film. The currently used transparent conductive material is Indium Tin Oxide (ITO) doped with tin (Sn), which has excellent transparency and low specific resistance (1×10^-4 ~ 1×10^-4 Ωcm). it is known

Methods for manufacturing the transparent conductive thin film include vacuum deposition methods such as sputtering, chemical vapor deposition (CVD), ion beam deposition, pulsed laser deposition, and spray coating (spray coating). coating), spin coating, and a wet method such as dip coating. Among these methods, a vacuum deposition method such as sputtering is more preferred, and since the vacuum deposition method uses plasma, a film having high particle energy can be grown, and a high-quality film having a higher density than other methods can be obtained. In addition, there is an advantage that a high-quality thin film can be grown even at a low temperature without additional heat treatment.

Recently, as the flat-panel display market grows, the demand for ITO is rapidly increasing, but due to the high price of indium, unstable supply and demand and harmfulness to the human body, the development of a low-cost transparent conductive material that can replace ITO is required. the current situation.

Korean Patent Publication No. 10-2010-0007605 (2010.01.22)

The present application is to provide a conductive structure capable of improving the hiding properties of the conductive layer, including the blackening layer, and a manufacturing method thereof.

A conductive structure according to an embodiment of the present invention includes a substrate; a conductive layer formed on the upper surface of the substrate and including copper; an upper blackening layer formed on the upper surface of the conductive layer and including copper oxynitride; and a lower blackening layer formed on a lower surface of the conductive layer and including the copper oxynitride.

Here, the lower blackening layer and the upper blackening layer may include copper oxynitride satisfying CuOxNy (1.1 ≤ x ≤ 1.5, 0.01 ≤ y ≤ 0.02), and the upper blackening layer is measured at the upper end of the upper blackening layer As long as the total reflectance is 0% or more and 10% or less, the color difference may satisfy L < 40, -15 ≤ a* < 0, and -25 ≤ b* < 0. In addition, the lower blackening layer may have a total reflectance of 0% or more and 15% or less, measured at the bottom of the substrate, and a color difference of L < 45, -15 ≤ a* < 0, -25 ≤ b* < 0 .

A conductive structure according to another embodiment of the present invention includes a substrate; a first lower blackening layer formed on the upper surface of the substrate and including copper oxynitride; a first conductive layer formed on an upper surface of the first lower blackening layer and including copper; a second lower blackening layer formed on the lower surface of the substrate and including the copper oxynitride; and a second conductive layer formed on a lower surface of the second lower blackening layer and including the copper. Here, the conductive structure according to another embodiment of the present invention is formed on the upper surface of the first conductive layer, the first upper blackening layer including the copper oxynitride; and a second upper blackening layer formed on a lower surface of the second conductive layer and including the copper oxynitride. Here, the first lower blackening layer and the second lower blackening layer may include copper oxynitride satisfying CuOxNy (1.1 ≤ x ≤ 1.5, 0.01 ≤ y ≤ 0.02).

A method for manufacturing a conductive structure according to an embodiment of the present invention includes: forming a lower blackening layer including copper oxynitride on a substrate; forming a conductive layer made of copper on the lower blackening layer; and forming an upper blackening layer including the copper oxynitride on the conductive layer. Here, the copper oxynitride may be a copper oxynitride satisfying CuOxNy (1.1 ≤ x ≤ 1.5, 0.01 ≤ y ≤ 0.02).

A method for manufacturing a conductive structure according to another embodiment of the present invention includes: forming a first lower blackening layer including copper oxynitride on an upper surface of a substrate; forming a first conductive layer including copper on an upper surface of the first lower blackening layer; forming a second lower blackening layer including copper oxynitride on the lower surface of the substrate; and forming a second conductive layer formed on a lower surface of the second lower blackening layer and including the copper. Here, the copper oxynitride may be a copper oxynitride satisfying CuOxNy (1.1 ≤ x ≤ 1.5, 0.01 ≤ y ≤ 0.02).

Incidentally, the means for solving the above problems do not enumerate all the features of the present invention. Various features of the present invention and its advantages and effects may be understood in more detail with reference to the following specific embodiments.

According to the conductive structure and its manufacturing method according to an embodiment of the present invention, it is possible to manufacture a conductive structure including a conductive layer that can replace the conventional ITO electrode. Therefore, it is possible to manufacture a conductive structure with low resistance and low cost compared to ITO, and in particular, since the blackening layer is included, the hiding property of the conductive layer can be improved.

According to the conductive structure and its manufacturing method according to an embodiment of the present invention, since the blackening layer is included on the upper and lower portions of the conductive layer, not only reflection by external light applied from the outside, but also conduction by internal light generated from the inside It is possible to improve the reflection phenomenon at the back side of the layer.

1 is a schematic view showing a conductive structure according to an embodiment of the present invention.
2 is a schematic view showing a conductive structure according to another embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing a conductive structure according to an embodiment of the present invention.

Hereinafter, preferred embodiments will be described in detail so that those of ordinary skill in the art can easily practice the present invention with reference to the accompanying drawings. However, in describing the preferred embodiment of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and functions.

In addition, throughout the specification, when a part is 'connected' with another part, it is not only 'directly connected' but also 'indirectly connected' with another element interposed therebetween. include In addition, 'including' a certain component means that other components may be further included, rather than excluding other components, unless otherwise stated.

In this specification, a display device refers to a TV or a computer monitor, and may include a display device forming an image and a case supporting the display device.

Examples of the display device include a plasma display panel (PDP), a liquid crystal display (LCD), an electrophoretic display, a cathode-ray tube (CRT), and an OLED display. can be heard The display device may include an RGB pixel pattern and an additional optical filter for image realization.

On the other hand, with respect to display devices, as the spread of smartphones, tablet PCs, IPTVs, etc. accelerates, the need for a touch function in which a human hand becomes an input device directly without a separate input device such as a keyboard or a remote control is increasing. . In addition, the demand for a multi-touch function as well as specific point recognition is increasing.

Currently, most commercially available touch screen panels (TSP, Touch Screen Panels) are based on transparent conductive ITO thin films. There is a problem in that the touch recognition speed becomes slow due to the RC delay, and in order to overcome the problem of the recognition speed delay, it is difficult to additionally introduce a compensation chip or the like. As a solution to this problem, it may be considered to replace the transparent ITO thin film with a metal thin film. However, when a metal thin film is used, there may be a problem that a fine pattern of the metal thin film is well recognized by the human eye due to the high reflectivity of the metal. In addition, since the metal thin film has high reflectivity and haze value with respect to external light, glare may occur to the user.

Therefore, in one embodiment of the present invention, it can be differentiated from a conventional ITO-based touch screen panel using a transparent conductive thin film layer, and the concealability of the metal thin film electrode and the reflection and diffraction characteristics for external light are improved. To provide a conductive structure that can be applied to

1 is a schematic view showing a conductive structure according to an embodiment of the present invention.

Referring to FIG. 1 , the conductive structure according to an embodiment of the present invention may include a substrate 100 , a lower blackening layer 200 , a conductive layer 300 , and an upper blackening layer 400 .

Hereinafter, a conductive structure according to an embodiment of the present invention will be described with reference to FIG. 1 .

The substrate 100 is generally used to form a conductive structure, and the material of the substrate 100 may be appropriately selected according to a field to which the conductive structure is to be applied. For example, the substrate 100 may be a glass or inorganic material substrate, a plastic substrate, or a film, and according to an embodiment, polyethylene terephthalate (PET), a polycarbonate film, or the like may be used. Here, the substrate 100 may have a thickness of 25 to 188 μm.

A conductive layer 300 may be formed on the substrate 100 , and the conductive layer 300 may replace a conventional transparent electrode such as ITO. Here, the conductive layer 300 may be formed using a material selected from various types of metals and alloys thereof, but in this embodiment, the conductive layer 300 is a single or multilayer film containing copper as an example. Explain. The thickness of the conductive layer 300 is not particularly limited, but it is desirable to form a thickness of 50 nm or more and 200 nm or less in terms of conductivity of the conductive pattern to be formed on the conductive layer 300 and economic feasibility of the forming process. The line width of the conductive pattern may be 10 μm or less.

Meanwhile, a preset pattern may be formed on the conductive layer 300 . The pattern may be formed using an etching resist pattern, and the etching resist pattern may be formed by a laser transfer method such as a printing method, a photolithography method, a photolithography method, a method using a mask, or thermal transfer imaging. It can be formed using various methods including.

1, an upper blackening layer 400 and a lower blackening layer 200 may be formed on the upper and lower portions of the conductive layer 300, respectively, and the upper blackening layer 400 and the lower blackening layer ( 200) to lower the reflectivity of the conductive layer 300 and improve light absorption characteristics.

For example, in the case of an embodiment in which the conductive layer 300 is provided on the effective screen portion of the touch panel, light reflection in the conductive layer 300 may have a major effect on the visibility of the conductive layer 300 . . That is, when the conductive layer 300 is formed of a metal such as copper instead of ITO as in the conductive layer 300 according to an embodiment of the present invention, the conductive layer 300 may be used by the user due to the high reflectivity of copper. It may be easily noticed by the user, or problems such as glare of a user due to reflection from the copper may occur. Accordingly, in one embodiment of the present invention, in order to lower the reflectivity of the conductive layer 300 and improve the absorbance characteristics, blackening layers 200 and 400 may be provided on both surfaces of the upper and lower sides corresponding to the conductive layer 300 . can

Specifically, when the blackening layers 200 and 400 are combined with a layer having high reflectivity, such as the conductive layer 300, destructive interference and self-absorbance can be implemented under a specific thickness condition. That is, the amount of light reflected by the blackening layers 200 and 400 and the amount of light reflected from the conductive layer 300 through the blackening layers 200 and 400 are adjusted to be similar to each other, and at the same time, the two light beams under a specific thickness condition. By inducing destructive interference between the two, the effect of lowering the reflectivity by the conductive layer 300 may be realized. In particular, the upper blackening layer 400 can prevent reflection of the conductive layer 300 by external light, such as light incident from the outside, and the lower blackening layer 200 is a touch where the conductive layer 300 is located. It is possible to prevent reflection by internal light generated inside the panel or the display device.

Therefore, in the case of the upper blackening layer 400, after measuring the total reflectance and color difference at the upper end of the upper blackening layer 400, the total reflectance is 10% or less, and the color range is L < 40 based on the CIE Lab color coordinates. , -15 ≤ a* < 0, -25 ≤ b* < 0 may be selected.

In addition, in the case of the lower blackening layer 200, after measuring the total reflectance and color difference in the lower part of the substrate 100, the total reflectance is 15% or less, and the color range is L < 45, - 15 ≤ a* < 0, -25 ≤ b* < 0 may be selected. Here, it can be seen that the total reflectance and color difference range of the lower blackening layer 200 is wider than that of the upper blackening layer 400 . This is to consider the optical properties of the base material 100 because the structure passes through the base material 100 when measuring the total reflectance and color difference of the lower blackening layer 200 . The substrate 100 may be a PET film having a total reflectance of 8.15%, an L value of 34.29, an a* value of -0.27, and a b* value of -0.98, and the PET film is relative to the lower blackening layer 200 . In consideration of having a high total reflectance and an L value, the range of the optical properties of the lower blackening layer 200 may be extended.

Here, the total reflectance is a value observed by measuring only the reflectivity of the side to be measured after making the reflectance 0 on the opposite side of the side to be measured using black paste or tape, At this time, the incoming light source may select a diffuse light source most similar to ambient light conditions. In addition, at this time, the measurement position for measuring the reflectance may be based on a position inclined by about 7 degrees from the vertical line of the semicircle of the integrating sphere.

Meanwhile, the upper and lower blackening layers 200 and 400 are formed using a deposition method, such as a sputtering method, a chemical vapor deposition (CVD) method, a thermal evaporation method, or an e-beam deposition method. After that, it can be created by patterning it. Here, the blackening layers 200 and 400 may be patterned simultaneously or separately from the conductive layer 300 , but it is preferable to form the conductive layer 300 and the blackening layers 200 and 400 at the same time so that the blackening layers 200 and 400 correspond accurately. do.

The color of the blackening layers 200 and 400 may be close to dark cyan, but it is not necessarily a color close to dark cyan. do. At this time, the achromatic color refers to a color that appears when light incident on the surface of an object is not selectively absorbed but reflected and absorbed evenly for each component's wavelength.

On the other hand, the material of the upper blackening layer 400 and the lower blackening layer 200 is a light absorbing material, and as long as it is a material made of a metal, a metal oxide, a metal nitride, or a metal oxynitride having the above-described physical properties, it is not particularly limited and can be used can However, in this embodiment, when the conductive layer 300 is copper, the blackening layers 200 and 400 may include CuOxNy, which is copper oxynitride, in which case 1.1 ≤ x ≤ 1.5 and 0.01 ≤ y ≤ 0.02. We can choose the real numbers x and y that are satisfied, respectively.

As mentioned above, when the blackening layers 200 and 400 are formed, the total reflectivity is lower than the preset value to prevent the incident light from being reflected, and L, a*, L, a*, It is necessary to have a value of b* so that it has a dark color range that people do not easily recognize. Here, the characteristics of the blackening layers 200 and 400 such as the reflectance and color range may be determined according to the ratio of oxygen and nitrogen contained in the copper oxynitride forming the blackening layers 200 and 400 . Accordingly, in the chemical formula CuOxNy for copper oxynitride, x and y values satisfying all of the above-described characteristics may be obtained by adjusting the x and y values. Specifically, when real numbers x and y that satisfy 1.1 ≤ x ≤ 1.5 and 0.01 ≤ y ≤ 0.02 are selected, the upper blackening layer 400 and the lower blackening layer 200 satisfying both the conditions for total reflectance and color described above. ) can be obtained.

A conductive structure according to another embodiment of the present invention, as shown in FIG. 2 , includes a substrate 100 , a first lower blackening layer 210 , a first conductive layer 310 , and a first upper blackening layer 410 . , a second lower blackening layer 220 , a second conductive layer 320 , and a second upper blackening layer 420 . That is, compared with the conductive structure of FIG. 1 , there is a difference in that it includes conductive layers 310 and 320 , upper blackening layers 410 and 420 , and lower blackening layers 210 and 220 on both sides of the substrate 100 . have.

Here, when the conductive structure is used for the touch screen panel, an embodiment in which the first conductive layer 310 is used as the transmitter Tx and the second conductive layer 320 is used as the receiver Rx is possible. In the prior art, two conductive structures were manufactured, the two conductive structures were divided into a transmitter and a receiver, respectively, and the user's input applied through the transmitter and the receiver was sensed. In this case, in order to accurately detect the user's input, it is necessary to align the positions of the transmitter and the receiver to match the positions of the transmitter and receiver.

However, as shown in FIG. 2 , in the case of the conductive structure according to this embodiment, since the conductive layers 310 and 320 are included on both sides of the substrate 100 , respectively, it is located on the upper surface of the substrate 100 . The first conductive layer 310 may be set as the transmitter, and the second conductive layer 320 positioned on the lower surface of the substrate 100 may be set as the receiver. That is, since the transmitter and the receiver are fixed to one base material 100 , there is no need to separately align the transmitter and the receiver, and there is no fear of dimensional errors.

In addition, in the case of forming the transmitter and the receiver on separate conductive structures as in the prior art, an adhesion process for fixing each transmitter and the receiver is further required, and the substrate 100 for generating each conductive structure is additionally added Therefore, there is a problem such as an increase in the manufacturing cost of the touch panel. On the other hand, according to the present embodiment, both the transmitter and the receiver can be implemented with one base material 100 , and a separate bonding process can be omitted, so that it is possible to save manufacturing cost and shorten manufacturing time. Furthermore, since both the transmitter and the receiver can be formed on one substrate 100 , it is also possible to reduce the thickness of the touch screen panel.

Meanwhile, in the present embodiment, the case where the conductive structure of FIG. 2 is used as the transmitter and the receiver of the touch screen panel has been described as an example, but the present invention is not limited thereto, and the conductive structure of FIG. 2 may be utilized in various cases. Meanwhile, in some embodiments, there may be a conductive structure in which the first upper blackening layer 410 and the second upper blackening layer 420 are omitted.

3 is a flowchart illustrating a method of manufacturing a conductive structure according to an embodiment of the present invention.

Referring to FIG. 3 , the method for manufacturing a conductive structure according to an embodiment of the present invention may include a lower blackening layer forming step (S100), a conductive layer forming step (S200) and an upper blackening layer forming step (S300). have.

Hereinafter, a method of manufacturing a conductive structure according to an embodiment of the present invention will be described with reference to FIG. 3 .

In the lower blackening layer forming step ( S100 ), a lower blackening layer including copper oxynitride may be formed on the substrate. The substrate may be polyethylene terephthalate (PET), polycarbonate film, or the like, and may have a thickness of 25 to 188 μm. When the conductive layer is formed of a metal such as copper instead of the conventional ITO, problems such as the conductive layer being visible to the user or glare may occur due to the high reflectivity and haze value of the metal. In order to solve this problem, in the lower blackening layer forming step ( S100 ), the lower blackening layer is formed in advance before the conductive layer is formed, so that the reflectivity due to internal light such as a display device can be lowered and the absorbance characteristic can be improved.

Specifically, in the lower blackening layer forming step (S100), the lower blackening layer may have a total reflectance of at least 15% or less to prevent incident internal light from being reflected to the outside, and based on the CIE Lab color coordinates As L < 45, -15 ≤ a* < 0, and -25 ≤ b* < 0, the lower blackening layer may have a dark color range that is not easily recognized by human eyes.

Here, the above-described properties of the lower blackening layer may be determined according to the ratio of oxygen and nitrogen included in the copper oxynitride forming the lower blackening layer. Therefore, in the formula CuOxNy for copper oxynitride, x and y values satisfying all of the above-described characteristics may be obtained by adjusting the x and y values. Specifically, when real numbers x and y that satisfy 1.1 ≤ x ≤ 1.5 and 0.01 ≤ y ≤ 0.02 are selected, the lower blackening layer satisfying all of the above-described conditions for total reflectance and color can be obtained.

In the conductive layer forming step ( S200 ), a conductive layer using copper as a material may be formed on the lower blackening layer. The conductive layer replaces the conventional ITO, and in the conductive layer forming step (S200), the conductive layer may be formed using a material selected from various types of metals and alloys thereof. Here, when the conductive layer is formed using copper as a material, the conductive layer may be formed to a thickness of 50 to 200 nm, and the sheet resistance may be implemented to have 0.2 Ω/□ or more and less than 0.5 Ω/□. A predetermined pattern may be included in the conductive layer, and a regular pattern such as a mesh pattern or an irregular pattern may be formed.

In the upper blackening layer forming step ( S300 ), a blackening layer including the copper oxynitride may be formed on the conductive layer. The upper blackening layer may be formed on the conductive layer to prevent reflection caused by external light incident from the outside and to improve absorbance characteristics.

Therefore, when the upper blackening layer is formed in the upper blackening layer forming step (S300), the total reflectivity is at least 10% or less to prevent the incident light from being reflected, and L < 40 based on the CIE Lab color coordinates , -15 ≤ a* < 0 and -25 ≤ b* < 0, so that the upper blackening layer may have a dark color range that is not easily recognized by people.

However, the characteristics of the above-described upper blackening layer may be determined according to a ratio of oxygen and nitrogen included in the copper oxynitride forming the upper blackening layer. Therefore, in the formula CuOxNy for copper oxynitride, x and y values satisfying all of the above-described characteristics may be obtained by adjusting the x and y values. Specifically, if real numbers x and y that satisfy 1.1 ≤ x ≤ 1.5 and 0.01 ≤ y ≤ 0.02 are selected, a blackening layer that satisfies all of the above-described conditions for total reflectance and color can be obtained.

According to an embodiment of the present invention, there may be a touch screen panel including the above-described conductive structure. Here, the touch screen panel may be a capacitive touch screen panel, and the conductive structure according to an embodiment of the present invention may be used as a touch sensitive electrode substrate.

According to an embodiment of the present invention, there may be a display device including the touch screen panel.

Hereinafter, the present invention will be described in more detail through Examples, Comparative Examples and Experimental Examples. However, the following Examples, Comparative Examples, and Experimental Examples are for illustrating the present invention, and the scope of the present invention is not limited thereby.

<Examples and Comparative Examples>

In the case of forming the conductive layer and the upper and lower blackening layers on only one side of the substrate, the lower blackening layer and the conductive layer are continuously processed through Roll to Roll sputtering on a PET film having a thickness of 25 to 188 μm. And a conductive structure was prepared by forming an upper blackening layer. At this time, the upper and lower blackening layers were formed to be 15 to 50 μm, and the conductive layer was formed to be 50 to 200 nm, and when the upper blackening layer was formed, the ratio of oxygen and nitrogen contained in copper oxynitride was varied, respectively, in Examples 1 and 2, respectively. , 3 and the conductive structures of Comparative Examples 1 and 2 were prepared.

Table 1 below shows the L, a*, and b* values according to the total reflectance and color difference in the upper blackening layer direction for the conductive structures of Examples 1, 2, 3 and Comparative Examples 1 and 2, respectively.

blackening layer CuOxNy Total Reflectance (%) L a* b* Example 1 1: 1.1: 0.02 5.64 28.49 -3.86 -24.64 Example 2 1: 1.5: 0.01 5.32 27.64 -4.31 -23.95 Example 3 1: 1.2: 0.01 5.47 28.18 -3.94 -24.12 Comparative Example 1 1: 0.8: 0.03 41.91 70.81 6.83 6.2 Comparative Example 2 1: 1.7: 0.01 8.32 34.65 5.38 -24.29

According to Example 1, the ratio of copper, oxygen and nitrogen in the copper oxynitride forming the upper blackening layer is 1:1.1:0.02. In this case, since the total reflectance is 5.64%, L = 28.49, a* = -3.86, b* = -24.64, all of the physical conditions of the upper blackening layer described above may be satisfied.

In addition, according to Example 2, the ratio of copper, oxygen and nitrogen in the copper oxynitride forming the upper blackening layer is 1: 1.5: 0.01, total reflectance 5.32%, L = 27.64, a* = -4.31, b* = -23.95, so all of the physical conditions of the upper blackening layer described above may be satisfied.

In addition, according to Example 3, the ratio of copper, oxygen, and nitrogen of copper oxynitride forming the upper blackening layer is 1: 1.2: 0.01, total reflectance 5.47%, L = 28.18, a* = -3.94, b* = -24.12, so all of the physical conditions of the upper blackening layer described above may be satisfied.

On the other hand, in Comparative Example 1, the ratio of copper, oxygen, and nitrogen of the copper oxynitride was 1:0.8:0.03, which was out of the ratio of copper, oxygen, and nitrogen of the copper oxynitride proposed in the present invention. In this case, the total reflectance is 41.91%, which is 10% or more, the L value is 70.81, the a* value is 6.83, and the b* value is 6.2. A problem such as increased visibility of the user on the floor may occur.

In Comparative Example 2, the ratio of copper, oxygen and nitrogen in the copper oxynitride is 1:1.7:0.01, which is out of the ratio of copper, oxygen and nitrogen contained in the copper oxynitride proposed in the present invention. Here, the total reflectance is good at 8.32%, and the L value and b* value are also good, but the a* value deviates from the standard at 5.83. Therefore, a red or green series may appear strongly in the blackening layer, and accordingly, there is a risk that the visibility of the blackening layer may be increased.

Meanwhile, when the conductive layer and the upper and lower blackening layers are formed on only one surface of the substrate, it is possible to vary the ratio of oxygen and nitrogen included in the copper oxynitride included in the lower blackening layer. Accordingly, conductive structures of Examples 4, 5, and 6 and Comparative Examples 3 and 4 were prepared according to the ratio of oxygen and nitrogen included in the copper oxynitride included in the lower blackening layer, respectively. Here, since the total reflectance and the color difference with respect to the lower blackening layer are measured under the PET film, the optical properties of the lower blackening layer may be distorted by the optical properties of the PET film. The total reflectance of the PET film is 8.15%, L = 34.29, a* = -0.27, b* = -0.98.

Table 2 below shows the results of measuring L, a*, and b* values according to the total reflectance and color difference at the substrate side for the conductive structures of Examples 4, 5, 6 and Comparative Examples 3 and 4, respectively.

blackening layer CuOxNy Total Reflectance (%) L a* b* Example 4 1: 1.1: 0.02 13.47 43.46 -1.44 -15.38 Example 5 1: 1.5: 0.01 13.25 43.14 -2.07 -14.78 Example 6 1:1.2:0.01 13.44 43.36 -1.71 -15.01 Comparative Example 3 1: 0.8: 0.03 42.51 71.22 6.45 5.92 Comparative Example 4 1: 1.7: 0.01 16.62 47.78 4.19 -14.18

According to Example 4, the ratio of copper, oxygen and nitrogen in the copper oxynitride forming the lower blackening layer is 1:1.1:0.02. In this case, the reflectance of the lower blackening layer is 13.27%. Since L = 43.46, a* = -1.44, and b* = -15.28, all of the physical conditions of the lower blackening layer described above may be satisfied.

Further, according to Example 5, the ratio of copper, oxygen and nitrogen of the copper oxynitride forming the lower blackening layer is 1: 1.5: 0.01, and the total reflectance of the lower blackening layer is 13.25%, L = 43.14, a* = Since -2.07, b* = -14.78, all of the physical conditions of the lower blackening layer described above may be satisfied.

Further, according to Example 6, the ratio of copper, oxygen and nitrogen of the copper oxynitride forming the lower blackening layer is 1: 1.2: 0.01, and the total reflectance of the lower blackening layer is 13.44%, L = 43.36, a* = Since -1.71, b* = -15.01, all of the physical conditions of the lower blackening layer described above may be satisfied.

On the other hand, in Comparative Example 3, the ratio of copper, oxygen, and nitrogen of the copper oxynitride was 1:0.8:0.03, which was out of the ratio of copper, oxygen, and nitrogen of the copper oxynitride proposed in the present invention. In this case, since the total reflectance of the lower blackening layer is 42.51%, which is 15% or more, the L value is 71.22, a* is 6.45, and b* is 5.92, so due to the high total reflectance and high brightness and saturation of the lower blackening layer, A problem such as an increase in user visibility of the conductive layer may occur.

In Comparative Example 4, the ratio of copper, oxygen and nitrogen in the copper oxynitride was 1: 1.7: 0.01, which was out of the ratio of copper, oxygen and nitrogen contained in the copper oxynitride proposed in the present invention. In this case, the total reflectance of the lower blackening layer is 16.62%, which is 15% or more, and the L value is 47.78, which is 45 or more. Therefore, the total reflectivity and brightness of the lower blackening layer may be high, and problems such as increased visibility may occur.

In addition, in the case of forming the lower blackening layer and the conductive layer on both sides of the substrate, a continuous process through Roll to Roll sputtering is applied to one side of a PET film having a thickness of 25 to 188 μm, first, A first lower blackening layer and a first conductive layer are sequentially formed on the upper surface of the PET film. Thereafter, when the formation of the first lower blackening layer and the conductive layer is completed, the direction of the roll is changed to sequentially form the second lower blackening layer and the second conductive layer on the opposite surface of the PET film in the same manner. Here, the first lower blackening layer and the second lower blackening layer are formed to have a thickness of 15 to 50 μm, and the first conductive layer and the second conductive layer are formed to have a thickness of 50 to 200 nm.

On the other hand, when the lower blackening layer and the conductive layer are respectively formed on both sides of the substrate, the same results as L, a*, and b* according to the total reflectance and color difference for the lower blackening layer in Table 2 can be obtained, so here A detailed description is omitted.

Additionally, a process for forming the first upper blackening layer and the second upper blackening layer on the first conductive layer and the second conductive layer may be separately performed.

The present invention is not limited by the above embodiments and the accompanying drawings. For those of ordinary skill in the art to which the present invention pertains, it will be apparent that the components according to the present invention can be substituted, modified and changed without departing from the technical spirit of the present invention.

100: substrate 200: lower blackening layer
210: first lower blackening layer 220: second lower blackening layer
300: conductive layer 310: first conductive layer
320: second conductive layer 400: upper blackening layer
410: first upper blackening layer 420: second upper blackening layer
S100: lower blackening layer forming step S200: conductive layer forming step
S300: upper blackening layer forming step

Claims (13)

write;
a conductive layer formed on the upper surface of the substrate and including copper;
an upper blackening layer formed on the upper surface of the conductive layer; and
and a lower blackening layer formed on the lower surface of the conductive layer,
The lower blackening layer and the upper blackening layer each independently satisfy CuOxNy (1.1 ≤ x ≤ 1.5, 0.01 ≤ y ≤ 0.02),
The lower blackening layer and the upper blackening layer each independently have a thickness of 15 to 50 μm,
The lower blackening layer has a total reflectance of 0% or more and 15% or less, measured from the lower part of the substrate, and a color difference of copper oxynitride that satisfies L < 45, -15 ≤ a* < 0, -25 ≤ b* < 0 A conductive structure comprising a.
delete According to claim 1, wherein the upper blackening layer
A conductive structure in which total reflectance measured at the upper end of the upper blackening layer is 0% or more and 10% or less, and the color difference satisfies L < 40, -15 ≤ a* < 0, -25 ≤ b* < 0.
delete write;
a first lower blackening layer formed on the upper surface of the substrate;
a first conductive layer formed on an upper surface of the first lower blackening layer and including copper;
a second lower blackening layer formed on the lower surface of the substrate; and
a second conductive layer formed on a lower surface of the second lower blackening layer and including the copper;
The first lower blackening layer and the second lower blackening layer each independently satisfy CuOxNy (1.1 ≤ x ≤ 1.5, 0.01 ≤ y ≤ 0.02),
The first lower blackening layer and the second lower blackening layer each independently have a thickness of 15 to 50 μm,
The first lower blackening layer has a total reflectance of 0% or more and 15% or less, measured from the lower part of the substrate, and a color difference of copper satisfying L < 45, -15 ≤ a* < 0, -25 ≤ b* < 0 A conductive structure comprising oxynitride.
6. The method of claim 5,
a first upper blackening layer formed on the upper surface of the first conductive layer and including copper oxynitride; and
A conductive structure formed on a lower surface of the second conductive layer and further comprising a second upper blackening layer including copper oxynitride.
delete forming a lower blackening layer including copper oxynitride on a substrate;
forming a conductive layer made of copper on the lower blackening layer; and
forming an upper blackening layer comprising copper oxynitride on the conductive layer;
The copper oxynitride of the lower blackening layer and the copper oxynitride of the upper blackening layer each independently satisfy CuOxNy (1.1 ≤ x ≤ 1.5, 0.01 ≤ y ≤ 0.02),
The lower blackening layer and the upper blackening layer each independently have a thickness of 15 to 50 μm,
The lower blackening layer has a total reflectance of 0% or more and 15% or less, measured at the bottom of the substrate, and a color difference of L < 45, -15 ≤ a* < 0, -25 ≤ b* < 0. Way.
delete forming a first lower blackening layer including copper oxynitride on the upper surface of the substrate;
forming a first conductive layer including copper on an upper surface of the first lower blackening layer;
forming a second lower blackening layer including copper oxynitride on the lower surface of the substrate; and
Forming a second conductive layer formed on the lower surface of the second lower blackening layer and including the copper,
The copper oxynitride of the first lower blackening layer and the copper oxynitride of the second lower blackening layer each independently satisfy CuOxNy (1.1 ≤ x ≤ 1.5, 0.01 ≤ y ≤ 0.02),
The first lower blackening layer and the second lower blackening layer each independently have a thickness of 15 to 50 μm,
The first lower blackening layer has a total reflectance of 0% or more and 15% or less, measured from the lower part of the substrate, and a color difference of L < 45, -15 ≤ a* < 0, -25 ≤ b* <0; A method for manufacturing a structure.
delete A touch screen panel comprising the conductive structure of any one of claims 1 and 5.
A display device comprising the conductive structure of any one of claims 1 and 5.

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