KR102332108B1 - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

An organic light emitting display device and a method of manufacturing the organic light emitting display device are provided. A color filter is disposed in each of the plurality of light emitting regions. An organic light emitting element is disposed on the color filter. The organic light emitting device includes an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer. The light extraction efficiency improving unit is disposed between the color filter and the organic light emitting device to improve light extraction efficiency of the organic light emitting device. A reflection reducing layer configured to reduce reflection of light on the lower surface of the substrate is disposed on the lower surface of the substrate. The device efficiency of the organic light emitting diode is improved through the light extraction efficiency improving unit, and the light leakage phenomenon that may occur due to total reflection at the interface between the substrate and air may be minimized through the reflection reducing layer.

Description

Organic light emitting display device and organic light emitting display device manufacturing method

The present invention relates to an organic light emitting display device and a method of manufacturing an organic light emitting display device, and more particularly, to an organic light emitting display device having improved light extraction efficiency and minimizing light leakage, and a method of manufacturing the organic light emitting display device.

The organic light emitting display device is a self-emission type display device, and unlike a liquid crystal display device, it does not require a separate light source, so it can be manufactured in a lightweight and thin form. In addition, the organic light emitting diode display is being studied as a next-generation display because it is advantageous in terms of power consumption due to low voltage driving, and has excellent color realization, response speed, viewing angle, and contrast ratio (CR).

The bottom emission type organic light emitting display device refers to an organic light emitting display device in which light emitted from the organic light emitting device is emitted to the lower portion of the organic light emitting diode display, and the light emitted from the organic light emitting device is the organic light emitting display device. It refers to an organic light emitting diode display that is emitted toward a lower surface of a substrate on which a thin film transistor for driving the device is formed. Light emitted from the organic light emitting layer of the bottom emission type organic light emitting display device is largely divided into an indium tin oxide (ITO)/organic mode (hereinafter referred to as 'ITO mode'), a substrate mode and It can be divided into air mode. The air mode refers to light emitted from the organic light emitting layer, which is extracted to the outside of the organic light emitting diode display, and the substrate mode refers to light that is trapped inside the organic light emitting diode display by total reflection from the substrate among the light emitted from the organic light emitting layer. , ITO mode refers to light trapped inside the organic light emitting display device by total reflection at an anode generally formed of ITO among light emitted from the organic light emitting layer. In the bottom emission type organic light emitting display device, the light trapped inside the organic light emitting diode display in the ITO mode is about 50% of the light emitted from the organic light emitting layer, and the light trapped inside the organic light emitting display as the substrate mode is emitted from the organic light emitting layer. As about 30% of the emitted light, about 80% of the light emitted from the organic light emitting layer is trapped inside the organic light emitting diode display. Therefore, since only about 20% of light is extracted to the outside, improving the light extraction efficiency of the organic light emitting diode display is a very important research field.

In order to improve light extraction efficiency, a micro lens array (MLA) is formed inside the organic light emitting diode display, or a scattering layer (SL) including particles capable of scattering light is formed inside the organic light emitting diode display. can be By applying the MLA or scattering layer, the ITO mode among the light emitted from the organic light emitting layer may be extracted through the MLA or the scattering layer.

On the other hand, in the manner in which the organic light emitting display expresses color, one organic light emitting layer among a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer is formed in each light emitting area, and each organic light emitting layer emits light of a different color. There is a method of expressing a color by doing this, and a method of expressing a color by forming a white organic light emitting layer in all light emitting regions and light emitted from the white organic light emitting layer passing through a color filter. Among them, when the MLA or scattering layer is applied to a method using a white organic light emitting layer and a color filter, a light leakage phenomenon may occur. For example, red light emitted from the red light emitting region may be extracted by the MLA or scattering layer and travel toward the substrate, and may be totally reflected at the interface between the substrate and air to travel back into the organic light emitting diode display. In this case, when the red light propagating inside the organic light emitting display device travels to the green light emitting area or the blue light emitting area, the red light is blocked by the green color filter of the corresponding green light emitting area and the blue color filter of the corresponding blue light emitting area. However, when red light traveling inside the organic light emitting diode display proceeds to another red emission region or a white emission region, the red light passes through the red color filter of the corresponding red emission region or passes through the white emission region without the corresponding color filter. Alternatively, it may meet the scattering layer and may be extracted from the corresponding red or white light emitting region to the outside of the organic light emitting diode display. In this case, even though only one red light emitting area is turned on, a light leakage phenomenon may occur in which other nearby red or white light emitting areas are also recognized as being turned on.

[Related technical literature]

1. Glass for scattering layer of organic LED device and organic LED device (Patent Application No. 10-2013-7002088)

Accordingly, the inventors of the present invention have invented an organic light emitting diode display having a new structure capable of solving a light leakage phenomenon that may be caused by applying a configuration for improving light extraction efficiency as described above, and a method for manufacturing the same.

Accordingly, an object of the present invention is to provide an organic light emitting display device and an organic light emitting display manufacturing method in which light extraction efficiency is improved and light leakage is minimized.

Another object of the present invention is to provide an organic light emitting display device and a method of manufacturing an organic light emitting display having a longer lifespan by improving light extraction efficiency.

Another object of the present invention is to provide an organic light emitting display device and a method of manufacturing an organic light emitting display in which reflection of external light that may be generated by not using a polarizing plate is suppressed.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

An organic light emitting display device according to an embodiment of the present invention is provided. The substrate has a plurality of light emitting regions. A color filter is disposed in each of the plurality of light emitting regions. An organic light emitting element is disposed on the color filter. The organic light emitting device includes an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer. The light extraction efficiency improving unit is disposed between the color filter and the organic light emitting device to improve light extraction efficiency of the organic light emitting device. A reflection reducing layer configured to reduce reflection of light on the lower surface of the substrate is disposed on the lower surface of the substrate. The reflection reducing layer is the outermost layer in direct contact with air. In the organic light emitting display device according to an embodiment of the present invention, the device efficiency of the organic light emitting diode is improved through the light extraction efficiency improving unit, and at the same time, light leakage that may be generated by total reflection at the interface between the substrate and air through the reflection reducing layer. phenomenon can be minimized.

According to another feature of the present invention, the reflection reducing layer is characterized in that it is made of a base resin and a reflection reducing material.

According to another feature of the present invention, the refractive index of the base resin is the same as the refractive index of the substrate.

According to another feature of the present invention, the reflection reducing material is one of titanium nitride (TiNx), titanium nitride oxide (TiOxNy), carbon black (carbon black), carbon nanotube (carbon nano tube), and amorphous carbon (amorphous carbon) characterized by being.

According to another feature of the present invention, the transmittance of the reflection reduction layer is determined by the thickness and absorption coefficient of the reflection reduction layer.

According to another feature of the present invention, the substrate has a display area and a non-display area having a plurality of light emitting areas, and the reflection reducing layer is disposed on the lower surface of the substrate to correspond to at least the display area.

According to another feature of the present invention, the light extraction efficiency improving unit includes an overcoat layer on the color filter and a light concentration layer on the overcoat layer, wherein the overcoat layer and the light concentration layer form a micro lens array (MLA) structure. do.

According to another feature of the present invention, the organic light emitting display device further includes an overcoating layer on the color filter, and the light extraction efficiency improving unit includes a scattering layer disposed on the overcoating layer and a light concentration layer covering the scattering layer. It is characterized in that it includes.

According to another feature of the present invention, the area of the upper surface of the color filter is larger than the area of the light emitting area, and the area of the upper surface or the lower surface of the light concentration layer is larger than the area of the light emitting area.

According to another aspect of the present invention, the organic light emitting display device further includes a protective film disposed between the substrate and the reflection reducing layer.

An organic light emitting display device according to another embodiment of the present invention is provided. The substrate has a plurality of sub-pixel areas, and each of the plurality of sub-pixel areas includes a light-emitting area and a non-emission area. The color filter is disposed in the light-emitting area, and wiring and thin film transistors are disposed in the non-emission area. An organic light emitting device including an anode, an organic light emitting layer and a cathode is disposed on the color filter. The light extraction efficiency improving unit is disposed between the color filter and the organic light emitting device, and includes an MLA structure or a scattering layer. The first reflection reducing layer is disposed between the wiring and the thin film transistor and the substrate to reduce reflection of light in the wiring and the thin film transistor. The second reflection reducing layer is disposed on the lower surface of the substrate and configured to reduce reflection of light on the lower surface of the substrate. The second reflection reducing layer is the outermost layer in direct contact with air. Although a polarizer is not used in the organic light emitting diode display according to another exemplary embodiment of the present invention, the reflectance of external light is reduced through the first reflection reduction layer disposed under the wiring and the thin film transistor and the second reflection reduction layer disposed under the substrate. At the same time, the transmittance of the organic light emitting diode display may be increased. In addition, a light leakage phenomenon may be minimized.

According to another feature of the present invention, the second reflection reduction layer absorbs light incident on the second reflection reduction layer without polarizing the light incident on the second reflection reduction layer.

According to another feature of the present invention, the organic light emitting diode display further includes a bank layer defining a light emitting area, and the bank layer includes a light absorbing material.

According to another feature of the present invention, the organic light emitting display device further includes a low reflection coating film in contact with the lower surface of the second reflection reducing layer.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention is provided. A method of manufacturing an organic light emitting display device includes: forming a color filter in each of a plurality of light emitting regions of a substrate; forming a light extraction efficiency improving unit configured to improve light extraction efficiency of an organic light emitting device on the color filter; Forming an organic light emitting device including an anode, an organic light emitting layer on the anode and a cathode on the organic light emitting layer on the enhancement part, and disposing a reflection reducing layer configured to reduce reflection of light on the lower surface of the substrate on the lower surface of the substrate include A reflection reduction layer configured to reduce reflection of light on the lower surface of the substrate is disposed on the lower surface of the substrate, so that light incident to the reflection reduction layer through the light extraction efficiency improving unit is totally reflected and propagated into the organic light emitting display device can be minimized. .

According to another feature of the present invention, the step of disposing the reflection reduction layer is characterized in that it is performed by coating a material for the reflection reduction layer on the lower surface of the substrate.

According to another feature of the present invention, the step of disposing the reflection reducing layer is characterized in that it is performed by adhering the reflection reducing layer to the lower surface of the substrate.

The details of other embodiments are included in the detailed description and drawings.

The present invention adopts a reflection reduction layer configured to reduce light reflection on the lower surface of the substrate, so that part of the light emitted from the organic light emitting layer in one light emitting area is reflected at the interface between the substrate and the air to emit the same color as the other one. Proceeding to the light emitting region of the light emitting region is minimized, and the light leakage phenomenon can be minimized.

In addition, the present invention maximizes the light extraction efficiency of the organic light emitting display by applying a structure capable of improving light extraction efficiency, such as MLA or a scattering layer, to the organic light emitting diode display without restrictions on light leakage, thereby Power consumption of the organic light emitting diode display may be improved and lifespan may be increased.

In addition, the present invention eliminates the need for a polarizing plate to suppress external light reflection, thereby reducing manufacturing cost and increasing transmittance.

The effect according to the present invention is not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a schematic bottom view illustrating an organic light emitting diode display according to an exemplary embodiment.
FIG. 2 is a schematic cross-sectional view of the organic light emitting diode display taken along line II-II' of FIG. 1 .
3 to 5 are schematic cross-sectional views of organic light emitting diode displays according to various embodiments of the present disclosure.
6 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the art to which the present invention pertains It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary, and thus the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

Reference to a device or layer “on” another device or layer includes any intervening layer or other device directly on or in the middle of another device.

Although first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Like reference numerals refer to like elements throughout.

The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated component.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each embodiment may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic bottom view illustrating an organic light emitting diode display according to an exemplary embodiment. FIG. 2 is a schematic cross-sectional view of the organic light emitting diode display taken along line II-II' of FIG. 1 . 1 and 2 , the organic light emitting diode display 100 includes a substrate 110 , a color filter 130 , an organic light emitting device 150 , a light extraction efficiency improving unit 140 , and a reflection reduction layer 120 . includes The organic light emitting display device 100 illustrated in FIGS. 1 and 2 is a bottom emission type organic light emitting display device.

The substrate 110 supports various elements of the organic light emitting diode display 100 . The substrate 110 is formed of an insulating material. For example, the substrate 110 may be formed of a transparent insulating material such as glass or plastic.

The substrate 110 has a display area DA and a non-display area NA. The display area DA refers to an area in which an image is displayed in the organic light emitting diode display 100 . Referring to FIG. 2 , the display area DA includes a plurality of sub-pixel areas SPR, SPG, and SPB, and each of the sub-pixel areas SPR, SPG, and SPB includes an emission area EAR, EAG, and EAB. and a non-emissive region. In FIG. 1 , the boundary between the display area DA and the non-display area NA and the outline of the light emitting area EA are shown with dotted lines. The light emitting area EA is defined by the bank layer 114 , and specifically, the light emitting area EA is an area corresponding to the portion of the anode 151 not covered by the bank layer 114 , and the non-emission area is This is a region where the bank layer 114 is formed. Although not shown in FIG. 2 , various thin film transistors, capacitors, wirings, etc. required for driving the organic light emitting device 150 may be formed in the non-emission area. The non-display area NA is an area in which an image is not displayed in the organic light emitting diode display 100 , and wiring, a driving circuit unit, a pad electrode, and the like may be formed in the non-display area NA. Although the non-display area NA is illustrated to surround the display area DA in FIG. 1 , the shape of the non-display area NA is not limited thereto.

Referring to FIG. 2 , the substrate 110 includes a red sub-pixel region SPR and a green sub-pixel region SPG each including a red emission region EAR, a green emission region EAG, and a blue emission region EAB. and a blue sub-pixel area SPB. FIG. 2 is an exemplary cross-sectional view of four sub-pixel areas, and since each of the sub-pixel areas SPR, SPG, and SPB has substantially the same configuration except for the wavelength of light passing through the color filter 130, hereinafter The red sub-pixel region SPR located on the left side of FIG. 2 will be described as an example.

A color filter 130 is disposed on the substrate 110 . One or more insulating layers may be disposed between the substrate 110 and the color filter 130 . For example, as shown in FIG. 2 , various insulating layers, such as a gate insulating layer 111 for insulating the gate electrode of the thin film transistor and other conductive materials, and a passivation layer 113 for protecting the upper part of the thin film transistor, are formed on the substrate. It may be disposed between 110 and the color filter 130 . However, the type of the insulating layer disposed between the substrate 110 and the color filter 130 is not limited to the gate insulating layer 111 and the passivation layer 113 .

The color filter 130 is for converting the color of the light emitted from the organic emission layer 152 , and may be one of the red color filter 130 , the green color filter 130 , and the blue color filter 130 . The color filter 130 may be formed of a material having a refractive index of about 1.5.

The color filter 130 is disposed on the passivation layer 113 at a position corresponding to the red emission region EAR. For example, the color filter 130 may be formed to overlap the red emission area EAR, and specifically, may have a size greater than or equal to the red emission area EAR. That is, the area of the upper surface of the color filter 130 may be greater than or equal to the area of the red emission area EAR. However, the position and size of the color filter 130 is determined not only by the position and size of the red light emitting region EAR, but also by the distance between the color filter 130 and the anode 151 , and the color filter 130 and the light extraction efficiency improvement unit. It may be determined by various factors such as the distance between 140 and the distance between the light emitting area and the light emitting area.

The light extraction efficiency improving unit 140 is disposed on the color filter 130 . The light extraction efficiency improving unit 140 is for improving the light extraction efficiency of the organic light emitting diode 150 , and includes an overcoat layer 141 formed on the color filter 130 and a light concentration layer formed on the overcoat layer 141 . (142). The overcoat layer 141 and the light concentration layer 142 form a micro lens array (MLA) structure.

An overcoat layer 141 is formed on the passivation layer 113 to cover the color filter 130 . The overcoat layer 141 is formed of an insulating material having a refractive index of about 1.5, for example, an acrylic resin, an epoxy resin, a phenol resin, a polyamide-based resin, a polyimide-based resin, an unsaturated polyester-based resin, or a polyphenylene-based resin. , polyphenylene sulfide-based resin, benzocyclobutene, and photoresist, but is not limited thereto, and may be formed of any insulating material having a refractive index of about 1.5.

The overcoat layer 141 includes a plurality of concave portions overlapping the color filter 130 . The plurality of concave portions of the overcoat layer 141 have a hemispherical shape or a semi-ellipsoidal shape, or are part of a hemispherical shape or a semi-ellipsoidal shape. The connecting portion of the overcoat layer 141 is a portion connecting a plurality of concave portions having a hemispherical or semi-ellipsoidal shape. In FIG. 2 , it is illustrated that the overcoat layer 141 includes a plurality of concave portions, but the overcoat layer 141 may include a plurality of convex portions.

The overcoat layer 141 functions as a planarization layer in the remaining regions except for the regions in which the plurality of concave portions are formed. In addition, the overcoat layer 141 is formed so that the light concentration layer 142 does not come into contact with the color filter 130 . Accordingly, the thickness of the overcoat layer 141 is determined based on the radius of curvature of the concave portion of the overcoat layer 141 . Specifically, the thickness of the overcoat layer 141 on the color filter 130 is equal to or greater than the radius of curvature of the concave portion of the overcoat layer 141 .

The light concentration layer 142 is formed along the shape of the plurality of concave portions of the overcoat layer 141 on the overcoat layer 141 . The upper surface of the light concentration layer 142 is formed as a non-planarized surface according to the shape of the concave portion of the overcoat layer 141 . That is, the upper surface portion of the light concentration layer 142 formed on the concave portion of the overcoat layer 141 and the upper surface portion of the light concentration layer 142 formed on the connection portion of the overcoat layer 141 are on different planes, The upper surface of the light concentration layer 142 is formed to be a non-planar surface. In addition, the light concentration layer 142 may alleviate a step difference due to the concave portion of the overcoat layer 141 .

When a plurality of concave portions are formed in the overcoat layer 141 through a process such as photolithography, there is a point in the overcoat layer 141 and a portion in which the morphology changes rapidly. However, the organic light emitting layer 152 of the organic light emitting device 150 is formed in a manner that makes the step coverage of the organic light emitting layer 152 poor, such as a thermal evaporation method, and the organic light emitting layer 152 has a very thin thickness of several hundred nm. Therefore, a region in which the organic light emitting layer 152 is not formed may occur on the anode 151 , and accordingly, the anode 151 and the cathode 153 are highly likely to be short-circuited. In the organic light emitting diode display 100 according to an embodiment of the present invention, the light concentration layer 142 for alleviating the step difference caused by the plurality of concave portions of the overcoat layer 141 is adopted, and the shape of the overcoat layer 141 is adapted to the shape of the overcoat layer 141 . It is possible to greatly reduce the probability that the anode 151 and the cathode 153 are short-circuited.

The light concentration layer 142 is formed of a material having a refractive index greater than that of the overcoat layer 141 . The refractive index of the light concentration layer 142 may be about 1.7 to 2.0. For example, the light concentration layer 142 is a layer in which nanoparticles having a size of several tens of nm such as titanium oxide or zirconium oxide having a refractive index greater than that of the polymer binder are dispersed in the polymer binder, or the photoresist has a refractive index higher than the refractive index of the photoresist. It may be a layer in which nanoparticles such as titanium oxide and zirconium oxide having a large refractive index are dispersed.

The light concentration layer 142 is patterned to correspond to the red emission region EAR, and is disposed on the overcoat layer 141 at a position corresponding to the red emission region EAR. For example, the light concentration layer 142 may be formed to overlap the red light emitting area EAR, and specifically, may have a size greater than or equal to the red light emitting area EAR. That is, the area of the upper surface or the lower surface of the light concentration layer 142 may be greater than or equal to the area of the red light emitting area EAR. In addition, the light concentration layer 142 is formed to overlap the color filter 130 and may have a size smaller than or equal to the color filter 130 .

When the light concentration layer 142 is formed as one layer over a plurality of light emitting areas, light emitted from the organic light emitting layer 152 of one light emitting area is totally reflected in the light concentrating layer 142 to another adjacent light emitting area. can proceed. The light proceeded in this way causes a light leakage phenomenon or a color mixture phenomenon. Accordingly, in the organic light emitting diode display 100 according to the exemplary embodiment of the present invention, the light concentration layer 142 is disposed to correspond to each of the light emitting areas EAR, EAG, and EAB, so that light is leaked by the light concentration layer 142 . Development or color mixing can be prevented.

An organic light emitting diode 150 including an anode 151 , an organic light emitting layer 152 , and a cathode 153 is formed on the light concentration layer 142 . Specifically, an anode 151 for supplying holes to the organic emission layer 152 is formed on the upper surface of the light concentration layer 142 , and an organic emission layer 152 for emitting white light on the anode 151 . ) is formed, and a cathode 153 for supplying electrons to the organic light emitting layer 152 is formed on the organic light emitting layer 152 . For example, the organic emission layer 152 may include a first organic emission layer that emits blue light and a second organic emission layer that is formed on the first organic emission layer and emits light of a color that becomes white by mixing with blue light. . The anode 151 , the organic light emitting layer 152 , and the cathode 153 are formed along the shape of the top surface of the organic light emitting layer 152 , which is a non-planarized surface, and have a non-planarized top and bottom surface. The anode 151 is formed of a transparent conductive oxide having a high work function, such as ITO, and the cathode 153 is formed of a metallic material having a low work function. In the present specification, since the organic light emitting diode display 100 is a bottom emission type organic light emitting display device 100 , the metallic material constituting the cathode 153 is a material having excellent reflectivity.

As the resolution of the organic light emitting diode display increases, the pixel size of the organic light emitting display decreases and the number of pixels increases. Accordingly, in a high-resolution organic light-emitting display device, power required to emit light of the same luminance is increased compared to an organic light-emitting display device having a relatively low resolution, and the lifespan of the organic light-emitting device may be problematic. Accordingly, in the organic light emitting diode display 100 according to an embodiment of the present invention, since the organic light emitting layer 152 is formed to have non-planar top and bottom surfaces, the organic light emitting layer 152 is compared with the planarized organic light emitting layer 152 . Thus, since the light emitting area is increased, the voltage and current for emitting light of the same luminance are reduced, the power is also reduced, and the lifespan of the organic light emitting diode 150 can be increased. In addition, since the cathode 153 is also formed to have non-planar top and bottom surfaces, the propagation angle of the light emitted from the organic light emitting layer 152 reflected from the cathode 153 toward the anode 151 is the overcoat layer 141 and the light. It is more likely to be smaller than the critical angle of total reflection at the interface of the concentrated layer 142 . Accordingly, since the amount of light trapped inside the organic light emitting diode display 100 can be reduced, a voltage and a current for emitting light of the same luminance are reduced, power is also reduced, and the lifespan of the organic light emitting diode 150 is reduced. can be increased.

In the organic light emitting diode display 100 according to an embodiment of the present invention, a light concentration layer 142 having a refractive index of about 1.7 to 2.0, which is a greater refractive index than that of the overcoat layer 141 is formed on the overcoat layer 141 . do. Since the refractive index of ITO used as the anode 151 is about 1.7 to 1.9, and the refractive index of the overcoat layer 141 is about 1.5, the light emitted from the organic light emitting layer 152 is the anode 151 and the light concentration layer 142. Total reflection may not occur at the interface of , but total reflection may occur at the interface between the light concentration layer 142 and the overcoat layer 141 . However, the overcoating layer 141 of the organic light emitting diode display 100 according to an exemplary embodiment has a plurality of concave portions, and the light concentration layer 142 is formed on the overcoating layer 141 including the plurality of concave portions. Thus, the overcoat layer 141 and the light concentration layer 142 may have an MLA structure. Accordingly, the incident angle of the light emitted from the organic light emitting layer 152 incident on the interface between the light concentration layer 142 and the overcoat layer 141 is highly likely to be smaller than the total reflection critical angle. The amount of light that is trapped in the can be reduced. In addition, the light emitted from the organic light emitting layer 152 passes through the interface between the light concentration layer 142 and the overcoat layer 141 to travel at an angle close to perpendicular to the lower surface of the substrate 110 . Accordingly, since it is highly likely that the light passing through the interface between the light concentration layer 142 and the overcoat layer 141 is smaller than the threshold angle of total reflection even in the substrate mode, the amount of light trapped inside the organic light emitting diode display 100 in the substrate mode. This may be reduced. In addition, by enabling multiple reflection of light at the interface between the light concentration layer 142 and the overcoat layer 141 , the number of times the light is reused to meet the MLA structure of the overcoat layer 141 and the light concentration layer 142 increases. may be Accordingly, since the amount of light trapped inside the organic light emitting diode display 100 may be reduced by the ITO mode and the substrate mode, light extraction efficiency may be increased, and the lifetime of the organic light emitting diode 150 may also be increased.

As described above, as the light extraction efficiency improving unit 140 is used, the light passing through the interface between the light concentration layer 142 and the overcoat layer 141 may be incident at an incident angle smaller than the total reflection critical angle for the substrate mode. this can be higher However, among the light passing through the light extraction efficiency improving unit 140 , the light incident on the substrate 110 at an angle greater than the total reflection critical angle for the substrate mode may also exist. Accordingly, the reflection reducing layer 120 is used in the organic light emitting diode display 100 according to an embodiment of the present invention.

1 and 2 , the reflection reducing layer 120 is disposed on the lower surface of the substrate 110 . The reflection reduction layer 120 is the outermost layer of the organic light emitting diode display 100 and is disposed to directly interact with air. The reflection reducing layer 120 is disposed to be in contact with the lower surface of the substrate 110 to reduce light reflection on the lower surface of the substrate 110 . Specifically, the reflection reduction layer 120 is a layer for reducing the total reflection of light emitted from the organic light emitting layer 152 of one light emitting area from the lower surface of the substrate 110 and proceeding to another light emitting area.

The reflection reducing layer 120 is made of a base resin and a reflection reducing material. The base resin is formed of a material having the same refractive index as that of the substrate 110 . Accordingly, light emitted from the organic emission layer 152 is not totally reflected at the interface between the substrate 110 and the reflection reduction layer 120 . Here, the fact that the refractive index of the base resin and the refractive index of the substrate 110 is the same means that the refractive index of the base resin and the substrate do not occur at the interface between the substrate 110 and the reflection reducing layer 120 as well as when the refractive index is completely identical. A case in which the refractive index of (110) is substantially the same is also included.

The reflection reducing material is a material for absorbing light emitted from the organic emission layer 152 . In particular, the reflection reducing material reduces total reflection of light incident at a total reflection critical angle or more at the interface between the reflection reducing layer 120 and air. The reflection reducing material may be, for example, one of titanium nitride (TiNx), titanium nitride oxide (TiOxNy), carbon black, carbon nanotubes, and amorphous carbon. However, the reflection reducing material is not limited to the above-described materials, and may be any other material capable of absorbing light.

The reflection reduction layer 120 may be disposed to correspond to at least the display area DA on the lower surface of the substrate 110 . Since the reflection reduction layer 120 is a layer for reducing total reflection of light emitted from the organic emission layer 152 , the reflection reduction layer 120 may be formed only in the display area DA where an actual image is displayed. However, for convenience of the manufacturing process, as shown in FIG. 1 , the reflection reducing layer 120 may be disposed on the entire lower surface of the substrate 110 . In FIG. 1 , the size of the reflection reduction layer 120 is shown to be smaller than that of the substrate 110 in order to prevent the outline of the substrate 110 and the outline of the reflection reduction layer 120 from being overlapped. Reference numeral 120 is disposed on the entire lower surface of the substrate 110 .

When light is incident from a medium having a high refractive index to a medium having a low refractive index, the light incident at an incident angle greater than or equal to the total reflection critical angle is totally reflected at the interface. At this time, the incident light is shifted laterally by a predetermined distance (d) along the interface and then reflected, and this phenomenon is called Goos-Hanchen shift. That is, since light incident at an incident angle equal to or greater than the total reflection critical angle travels along the interface by a predetermined distance d and is reflected, the difference between the point at which the light is incident on the interface and the point at which the light is reflected from the interface differs by the predetermined distance d. will come out In this case, the shifted distance varies depending on the wavelength and angle of incidence of the incident light, and may also vary depending on the polarization state of the incident light. When the light L1 emitted from the organic emission layer 152 of the red emission region EAR of the red sub-pixel region SPR travels through the substrate 110 to the reflection reduction layer 120 , the Since the refractive index and the refractive index of the reflection reduction layer 120 are the same, the light L1 emitted from the organic emission layer 152 passes through the interface between the substrate 110 and the reflection reduction layer 120 without total reflection. However, since the refractive index of air is smaller than the refractive index of the reflection reducing layer 120 , the light L1 emitted from the organic light emitting layer 152 may be totally reflected at the interface between the reflection reducing layer 120 and air. At this time, when the totally reflected light L2 travels to the green sub-pixel area SPG or the blue sub-pixel area SPB, the totally reflected light L2 is blocked by the color filter 130 of the corresponding sub-pixel area. do. However, when the totally reflected light L2 travels to another red sub-pixel area SPR, the totally reflected light L2 passes through the color filter 130 of the corresponding red sub-pixel area SPR to improve light extraction efficiency. The part 140 may be extracted from the corresponding red sub-pixel region SPR to the outside of the organic light emitting diode display 100 (L3). In this case, although only one red light emitting area EAR is turned on, a light leakage phenomenon may occur in which another nearby red light emitting area EAR is also recognized as being turned on. Accordingly, in the organic light emitting diode display 100 according to an embodiment of the present invention, the reflection reducing layer 120 is disposed on the lower surface of the substrate 110 to reduce reflection of the light L1 emitted from the organic light emitting layer 152 . Total reflection at the interface between the layer 120 and air is reduced. That is, while the light L1 emitted from the organic emission layer 152 reaches the interface between the reflection reduction layer 120 and the air through the reflection reduction layer 120 , a predetermined amount occurs at the interface between the reflection reduction layer 120 and air. is absorbed by the reflection reducing material in the reflection reducing layer 120 while traveling by a distance d of and reaching the interface between the reflection reducing layer 120 and the substrate 110 through the reflection reducing layer 120 The light L1 may be weakened. Accordingly, the amount of light L2 that is totally reflected may be reduced, so that total reflection of the light L1 emitted from the organic emission layer 152 may be suppressed. For example, the amount of the total reflected light L2 may be 10% or less of the light L1 emitted from the organic emission layer 152 . Accordingly, in the organic light emitting diode display 100 according to an embodiment of the present invention, the light extraction efficiency of the organic light emitting diode 150 is increased by the light extraction efficiency improving unit 140 and the light extraction efficiency improving unit 140 is increased. ) may be minimized by the reflection reducing layer 120 , which may occur according to the use of the light leakage phenomenon.

On the other hand, as the reflection reduction layer 120 is disposed on the lower surface of the substrate 110 and the reflection reduction layer 120 comes into contact with air, light emitted from the organic light emitting layer 152 and incident at an angle less than the total reflection critical angle. It may be absorbed by the reflection reducing layer 120 . That is, total reflection of light incident at an angle greater than or equal to total reflection can be minimized by using the reflection reduction layer 120 , but light incident at an angle less than total reflection is absorbed by the reflection reduction layer 120 , so that the organic light emitting diode display 100 . transmittance may be reduced. In the present specification, the transmittance or transmittance of the organic light emitting display device refers to a ratio of light emitted to the outside of the organic light emitting display device among the light emitted from the organic light emitting device of the organic light emitting display device. However, in the case of the organic light emitting diode display 100 in which a light leakage phenomenon occurs, it is determined as a defect and thus it is impossible to commercialize the organic light emitting display device itself, whereas the low transmittance of the organic light emitting display device 100 drives the organic light emitting diode 150 . It can be compensated by adjusting the driving voltage and the like. That is, since the light leakage phenomenon occurring in the organic light emitting diode display 100 leads to product defects, it is a problem that needs to be solved more urgently than the problem of lowering the transmittance of the organic light emitting display apparatus 100 . However, since the low transmittance of the organic light emitting diode display 100 leads to a decrease in the efficiency of the organic light emitting diode 150 , in the organic light emitting display 100 according to an embodiment of the present invention, the thickness of the reflection reducing layer 120 is And by adjusting an absorption coefficient, the transmittance of the reflection reduction layer 120 may be maintained at a specific value, for example, 80%. Accordingly, the light leakage phenomenon may be suppressed while maintaining the transmittance of the organic light emitting diode 150 .

The arrangement of the sub-pixel areas of FIG. 2 is illustrated by way of example, and the red sub-pixel area SPR, the green sub-pixel area SPG, and the blue sub-pixel area SPB may be arranged in any manner.

Also, although not shown in FIG. 2 , the organic light emitting diode display 100 may further have a white sub-pixel area. In this case, the color filter 130 is not disposed in the white sub-pixel area. Even when the white sub-pixel area is used, the above-described light leakage phenomenon may occur. That is, when light emitted from the red sub-pixel region SPR, the green sub-pixel region SPG, and the blue sub-pixel region SPB reaches the white sub-pixel region due to total reflection, or is emitted from the white sub-pixel region When light reaches the red sub-pixel region SPR, the green sub-pixel region SPG, and the blue sub-pixel region SPB due to total reflection, a light leakage phenomenon may occur. Accordingly, even when the white sub-pixel region is included in the substrate 110 , the light leakage phenomenon can be minimized through the reflection reduction layer 120 .

In some embodiments, the use of the light concentration layer 142 may be omitted. As described above, the light concentration layer 142 functions to alleviate the step difference caused by the concave portion of the overcoat layer 141 . However, when the step difference of the over-coating layer 141 is optimized, that is, when the portion in which the morphology of the over-coating layer 141 abruptly changes is minimized, the light concentration layer 142 may not necessarily be required.

3 is a schematic cross-sectional view of an organic light emitting diode display according to another exemplary embodiment. Compared to the organic light emitting display device 100 shown in FIGS. 1 and 2 , only the protective film 360 is added to the organic light emitting diode display 300 shown in FIG. 3 , and other components are substantially the same, so they overlap. A description is omitted.

Referring to FIG. 3 , a protective film 360 is disposed between the substrate 110 and the reflection reducing layer 120 . The protective film 360 is a film for protecting the organic light emitting diode display 300 from external impact. The protective film 360 is generally formed of a material having the same refractive index as that of the substrate 110 . In a typical organic light emitting display device, the protective film is disposed on the outermost side of the organic light emitting display device. That is, in a general organic light emitting diode display, the protective film 360 is a component in contact with air. Accordingly, when the protective film 360 is disposed on the lower surface of the reflection reducing layer 120 in the organic light emitting display device 300 , the protective film 360 and the air are caused by a difference between the refractive index of the protective film 360 and the refractive index of air. Since total reflection may occur at the interface of and the light emitted from the organic light emitting layer 152 may travel within the reflection reduction layer 120 may be reduced. Accordingly, in the organic light emitting diode display 300 according to another exemplary embodiment of the present invention, the protective film 360 is disposed between the substrate 110 and the reflection reducing layer 120 , and the protective film 360 provides an organic light emitting display. While protecting the device 300 , light leakage may be minimized.

In some embodiments, when the reflection reduction material of the reflection reduction layer 120 has rigidity, the protective film 360 may not be used. For example, when the reflection reducing material is a material having rigidity such as titanium nitride (TiNx) or titanium nitride oxide (TiOxNy), the reflection reducing layer 120 itself may also function as the protective film 360 . Accordingly, in the above-described case, the protective film 360 may not be used.

4 is a schematic cross-sectional view of an organic light emitting diode display according to another exemplary embodiment. Compared to the organic light emitting diode display 100 illustrated in FIGS. 1 and 2 , only the light extraction efficiency improving unit 440 is changed in the organic light emitting diode display 400 illustrated in FIG. 4 , and other components are substantially Since they are the same, duplicate descriptions are omitted.

Referring to FIG. 4 , the overcoat layer 415 functions as a planarization layer. That is, the overcoat layer 415 planarizes the upper portion of the color filter 130 in all of the red sub-pixel region SPR, the green sub-pixel region SPG, and the blue sub-pixel region SPB.

The light extraction efficiency improving unit 440 is for improving the light extraction efficiency of the organic light emitting diode 150 , and includes a scattering layer 441 and a light concentration layer 442 disposed on the overcoat layer 415 . .

The scattering layer 441 includes scattering particles for scattering light emitted from the organic light emitting layer 152 in order to improve the light extraction efficiency of the organic light emitting device 150 . The scattering layer 441 is a scattering particle. For example, it may include titanium oxide (TiO2) particles. In FIG. 4 , the upper and lower surfaces of the scattering layer 441 are shown as planes, but since the scattering layer 441 includes the scattering particles that scatter light as described above, the scattering layer 441 has a predetermined illuminance.

The light concentration layer 442 is disposed to cover the scattering layer 441 . The light concentration layer 442 is patterned to correspond to each of the light emitting areas EAR, EAG, and EAB, and is disposed on the overcoat layer 415 at a position corresponding to each of the light emitting areas EAR, EAG, and EAB. Accordingly, the area of the upper surface of the color filter 130 may be greater than or equal to the area of each of the light emitting areas EAR, EAG, and EAB, and the area of the upper surface or the lower surface of the light concentration layer 442 is equal to the area of each of the light emitting areas EAR, EAG, and EAB. It may be greater than or equal to the area of (EAR, EAG, EAB).

In the organic light emitting diode display 400 according to another embodiment of the present invention, the light extraction efficiency of the organic light emitting diode 150 may be increased by using the scattering layer 441 as the light extraction efficiency improving unit 440 . have. In addition, by using the reflection reducing layer 120 together with the scattering layer 441 , a light leakage phenomenon that may be caused by using the scattering layer 441 may be minimized.

5 is a schematic cross-sectional view of an organic light emitting diode display according to another exemplary embodiment. FIG. 5 exemplarily illustrates only the red sub-pixel region SPR and the green sub-pixel region SPG illustrated in FIG. 2 , and the organic light emitting diode display 500 illustrated in FIG. 5 is illustrated in FIGS. 1 and 2 . Compared to the organic light emitting diode display 100 , it is only that the wiring 570 is added, the first reflection reduction layer 580 and the second reflection reduction layer 520 are included, and the bank layer 514 is changed. Only different, and since other components are substantially the same, redundant description is omitted.

The organic light emitting diode display 500 according to another embodiment of the present invention is an organic light emitting display device that does not include a polarizing plate, and has a first reflection reducing layer ( 580), a second reflection reducing layer 520, and a bank layer 514 including a light absorbing material are used.

A wiring 570 is disposed on the substrate 110 in a non-emission area that is an area excluding the light-emitting areas EAR and EAB in each of the sub-pixel areas SPR and SPB. The wiring 570 transmits various signals for driving the organic light emitting device 150 . The wiring 570 may be, for example, a scan line, a data line, a Vdd line, or the like. Since the wiring 570 is generally formed of a metal material, external light is reflected from the wiring 570 , and thus the visibility of the organic light emitting diode display 500 may be reduced. Accordingly, in the organic light emitting diode display 500 according to another exemplary embodiment of the present invention, the first reflection reducing layer ( 580). The first reflection reducing layer 580 may be formed of an insulating material such as a black matrix, or may have a structure in which a transparent conductive oxide and a metal material are alternately stacked.

Although not shown in FIG. 5 , a thin film transistor may be disposed in the non-emission area. That is, various thin film transistors such as a switching thin film transistor and a driving thin film transistor for driving the organic light emitting diode 150 may be disposed in the non-emission region. Since the various electrodes of the thin film transistor are generally formed of a metal material, external light may be reflected from the electrodes of the thin film transistor, thereby reducing the visibility of the organic light emitting diode display 500 . Accordingly, in the organic light emitting diode display 500 according to another embodiment of the present invention, the first reflection reducing layer 580 may be disposed between the thin film transistor and the substrate 110 to reduce light reflection in the thin film transistor. . Also, when the capacitor is disposed in the non-emission region, the first reflection reducing layer 580 may be disposed between the capacitor and the substrate 110 .

The bank layer 514 defining the light emitting regions EAR and EAG may include a light absorbing material. External light incident from the outside of the organic light emitting diode display 500 may be reflected by a metal material disposed on the wiring 570 such as the cathode 153 . Accordingly, in the organic light emitting diode display 500 according to another embodiment of the present invention, the bank layer 514 may include a light absorbing material to reduce reflection of external light from the cathode 153 . The bank layer 514 may be, for example, a black matrix.

The second reflection reducing layer 520 is disposed to be in contact with the lower surface of the substrate 110 to reduce light reflection on the lower surface of the substrate 110 . The second reflection reduction layer 520 is a layer that performs a different function from that of the polarizing plate, and absorbs light incident on the second reflection reduction layer 520 without polarizing the light incident on the second reflection reduction layer 520 . In this way, the reflection of light on the lower surface of the substrate 110 is reduced. Since the second reflection reduction layer 520 is substantially the same as the reflection reduction layer 120 described with reference to FIGS. 1 and 2 , a redundant description thereof will be omitted.

A polarizing plate widely used in an organic light emitting display device can compensate for a decrease in contrast ratio (CR) caused by external light reflection, but also absorbs light emitted by an organic light emitting device, so that the polarizing plate significantly improves the transmittance and luminance of the organic light emitting display device. Reduce. That is, the external light reflectance can be reduced to about 5% by using the polarizing plate, but only about 40% of the light emitted from the organic light emitting layer and incident on the polarizing plate passes through the polarizing plate. That's a problem. However, when the polarizing plate is removed, external light reflection by various metals such as various wirings and various electrodes formed in the organic light emitting diode display becomes severe, and thus the contrast ratio of the organic light emitting display may decrease and the visibility of the organic light emitting display may decrease. have. Accordingly, in the organic light emitting diode display 500 according to another embodiment of the present invention, instead of removing the polarizing plate, the first reflection reducing layer 580 and the first reflection reducing layer 580 disposed between the wiring 570 and the thin film transistor and the substrate 110 , and By using the bank layer 514 including the light absorbing material, it is possible to suppress reflection of external light from the reflective material in the organic light emitting diode display 500 . Specifically, the external light reflectance may be reduced by about 10% by the first reflection reducing layer 580 and the bank layer 514 including the light absorbing material, and the transmittance may not be reduced by not using the polarizing plate. have.

In addition, in the organic light emitting diode display 500 according to another embodiment of the present invention, the second reflection reducing layer 520 disposed on the lower surface of the substrate 110 together with the light extraction efficiency improving unit 140 is used. The light extraction efficiency of the organic light emitting diode 150 may be increased, and light leakage that may be generated by the light extraction efficiency improving unit 140 may be minimized. Also, as the external light passes through the second reflection reducing layer 520 twice, the second reflection reducing layer 520 may further lower the external light reflectance. For example, when the second reflection reducing layer 520 is configured to have a transmittance of 80% as described above, the reduction is reduced by the first reflection reducing layer 580 and the bank layer 514 including the light absorbing material. The external light reflectance of about 10% is further reduced to about 6.4% (10% x 80% x 80%), and the transmittance of the organic light emitting diode display 500 is 80%. Accordingly, like the organic light emitting diode display 500 according to another embodiment of the present invention, the first reflection reducing layer 580 , the second reflection reducing layer 520 , and the bank layer 514 including the light absorbing material are used. When comparing the conventional organic light emitting diode display 500 using a polarizing plate with the case of using the polarizer, the reflectance of external light is almost the same, while the transmittance is doubled from 40% to 80%. Accordingly, in the organic light emitting diode display 500 according to another exemplary embodiment of the present invention, even when the polarizing plate is not used, the external light reflectance may be reduced almost the same as in the case of using the polarizing plate, and Transmittance can be increased. In addition, the light leakage phenomenon may be minimized by the second reflection reducing layer 520 .

In some embodiments, the light extraction efficiency improving unit 140 may include a scattering layer 441 as shown in FIG. 4 .

In some embodiments, a low reflection coating film in contact with the lower surface of the second reflection reducing layer 520 may be used. That is, in order to reduce the increase in external light reflectance as the polarizing plate is removed, a low-reflection coating film may be additionally disposed on the lower surface of the second reflection reducing layer 520 .

6 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment. 6 is a flowchart for explaining a method of manufacturing the organic light emitting diode display 100 illustrated in FIGS. 1 and 2 , and redundant descriptions of components described with reference to FIGS. 1 and 2 are omitted.

First, the color filter 130 is formed in each of the plurality of light emitting areas EA of the substrate 110 ( S60 ).

Next, the light extraction efficiency improving unit 140 configured to improve the light extraction efficiency of the organic light emitting device 150 is formed on the color filter 130 ( S61 ). The light extraction efficiency improving unit 140 includes an overcoat layer 141 and a light concentration layer 142 forming an MLA structure.

Specifically, the overcoat layer 141 having a plurality of concave portions overlapped with the color filter 130 is formed. To form the overcoat layer 141 , a photoresist material may be formed on the color filter 130 and the passivation layer 113 . As the photoresist, both a negative type photoresist and a positive type photoresist may be used. However, in order to form the concave portion in the overcoat layer 141 , it is advantageous in the manufacturing process to use a negative type photoresist. Then, an exposure process and a development process are performed on the photoresist, and as shown in FIG. 2 , the overcoat layer 141 having a plurality of recesses is formed. Although not shown in FIG. 2 , the overcoat layer 141 having a plurality of convex portions may be formed.

A light concentration layer 142 having a refractive index greater than that of the overcoat layer 141 is formed on the overcoat layer 141 to overlap the color filter 130 .

First, in order to form the light concentration layer 142 to overlap the color filter 130 , a material for the light concentration layer is formed over the overcoat layer 141 over the overcoat layer 141 . Then, the material for the light concentration layer is patterned so that the light concentration layer 142 is formed only in the region corresponding to the color filter 130 . When the material for the light concentration layer is a photo-patternable material, the light concentration layer 142 may be patterned by exposing and developing a positive type photoresist. In addition, when the material for the light concentration layer is not a photo-patternable material, the light concentration layer 142 may be patterned through a spin coating method. In order to form the light concentration layer 142, although it has been described that an exposure process or a spin coating method is used, various wet coating methods such as slit coating, inkjet printing, dip coating, nozzle printing, and screen printing may also be used.

In some embodiments, the light extraction efficiency improving unit 140 includes a scattering layer 441 disposed on the overcoat layer 141 as shown in FIG. 4 and a light concentration layer 142 covering the scattering layer 441 . ) may be included.

Next, an organic light emitting device 150 including an anode 151 , an organic light emitting layer 152 on the anode 151 and a cathode 153 on the organic light emitting layer 152 is formed on the light extraction efficiency improving unit 140 . do (S62).

Specifically, the anode 151 is formed on the light extraction efficiency improving part 140 of each light emitting area EA, and the bank layer 114 defining the light emitting area EA is formed. The bank layer 114 is shaped to cover the edge portion of the anode 151 . Subsequently, an organic emission layer 152 and a cathode 153 are sequentially formed on the anode 151 and the bank layer 114 .

Next, the reflection reducing layer 120 configured to reduce light reflection on the lower surface of the substrate 110 is disposed on the lower surface of the substrate 110 ( S63 ).

In some embodiments, the reflection reducing layer 120 may be manufactured in the form of a film and disposed on the lower surface of the substrate 110 in a manner that is adhered to the lower surface of the substrate 110 . When the reflection reduction layer 120 is manufactured in the form of a film, the reflection reduction layer 120 may be manufactured as a single film together with at least one of the low reflection coating film and the protective film 360 shown in FIG. 3 . By adhering the single film manufactured in this way to the lower surface of the substrate 110 , the reflection reducing layer 120 is on the lower surface of the substrate 110 together with the protective film 360 and/or the low reflection coating film. can be placed.

In some embodiments, the reflection reduction layer 120 may be disposed on the lower surface of the substrate 110 by coating the material for the reflection reduction layer on the lower surface of the substrate 110 . For example, a material that can be used as the reflection reduction layer 120 is coated on the lower surface of the substrate 110 , the coated material for the reflection reduction layer is cured, and the reflection reduction layer 120 is formed on the lower surface of the substrate 110 . can be placed.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

110: substrate
111: gate insulating layer
113: passivation layer
114, 514: bank layer
415: over coating layer
120: reflection reducing layer
520: second reflection reducing layer
130: color filter
140, 440: light extraction efficiency improvement unit
141: over coating layer
441: scattering layer
142, 442: light concentration layer
150: organic light emitting device
151: anode
152: organic light emitting layer
153: cathode
360: protective film
570: wiring
580: first reflection reducing layer
100, 300, 400, 500: organic light emitting display device
DA: display area
NA: non-display area
SPR: Red sub-pixel area
SPG: Green sub-pixel area
SPB: blue sub-pixel area
EA: light emitting area
EAR: red light emitting area
EAG: green light emitting area
EAB: blue light emitting area

Claims (17)

a substrate having a plurality of light emitting regions;
a color filter disposed in each of the plurality of light emitting regions on the substrate;
an overcoat layer on the color filter;
an organic light emitting device disposed on the color filter and the overcoat layer and including an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer;
a light extraction efficiency improving unit disposed between the color filter and the organic light emitting device to improve light extraction efficiency of the organic light emitting device; and
a reflection reducing layer disposed on the lower surface of the substrate and configured to reduce reflection of light on the lower surface of the substrate in direct contact with air;
The reflection reducing layer is made of a base resin and a reflection reducing material,
The refractive index of the base resin is the same as the refractive index of the substrate,
The substrate has a display area having the plurality of light emitting areas and a non-display area,
The reflection reducing layer is disposed on the entire surface of the display area on the lower surface of the substrate,
The reflection reducing material is a light absorbing material,
The light extraction efficiency improving part comprises a scattering layer disposed on the overcoat layer and a light concentration layer covering the scattering layer. delete delete According to claim 1,
The light absorbing material is characterized in that one of titanium nitride (TiNx), titanium nitride oxide (TiOxNy), carbon black (carbon black), carbon nanotube (carbon nano tube) and amorphous carbon (amorphous carbon), organic light emitting display device. According to claim 1,
The transmittance of the reflection reduction layer is determined by a thickness and an absorption coefficient of the reflection reduction layer. delete delete delete According to claim 1,
The area of the upper surface of the color filter is larger than the area of the light emitting area,
An area of an upper surface or a lower surface of the light concentration layer is larger than an area of the light emitting region. According to claim 1,
and a protective film disposed between the substrate and the reflection reduction layer. a substrate having a plurality of sub-pixel regions each including a light-emitting area and a non-emission area;
a color filter disposed in the light emitting area on the substrate;
a wiring and a thin film transistor disposed in the non-emission region on the substrate;
an overcoat layer disposed on the color filter;
an organic light emitting device disposed on the color filter and the overcoat layer and including an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer;
a light extraction efficiency improving unit disposed between the color filter and the organic light emitting device and including a scattering layer;
a first reflection reducing layer disposed between the wiring and the thin film transistor and the substrate and configured to reduce reflection of light in the wiring and the thin film transistor; and
a second reflection reducing layer disposed on the lower surface of the substrate and configured to reduce reflection of light on the lower surface of the substrate in direct contact with air;
The second reflection reduction layer absorbs light incident on the second reflection reduction layer without polarizing the light incident on the second reflection reduction layer,
The substrate has a display area having the plurality of light emitting areas and a non-display area,
The second reflection reduction layer is disposed on the entire surface of the display area on the lower surface of the substrate, and is made of a base resin and a reflection reduction material that is a light absorption material,
The refractive index of the base resin is the same as the refractive index of the substrate,
and the light extraction efficiency improving part includes the scattering layer disposed on the overcoat layer and a light concentration layer covering the scattering layer. delete 12. The method of claim 11,
Further comprising a bank layer defining the light emitting region,
and the bank layer includes a light absorbing material. 12. The method of claim 11,
The organic light emitting display device of claim 1, further comprising a low reflection coating film in contact with a lower surface of the second reflection reducing layer. forming a color filter in each of the plurality of light emitting regions of the substrate;
forming an overcoat layer on the color filter;
forming a light extraction efficiency improving unit configured to improve light extraction efficiency of an organic light emitting device on the color filter and the overcoat layer;
forming the organic light emitting device including an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer on the light extraction efficiency improving unit;
disposing on the lower surface of the substrate a reflection reduction layer made of a base resin and a reflection reduction material, the reflection reduction layer configured to reduce reflection of light on the bottom surface of the substrate;
The refractive index of the base resin is the same as the refractive index of the substrate,
The substrate has a display area having the plurality of light emitting areas and a non-display area,
The reflection reducing layer is disposed on the entire surface of the display area on the lower surface of the substrate,
The reflection reducing material is a light absorbing material,
The method of claim 1, wherein the light extraction efficiency improving part includes a scattering layer disposed on the overcoat layer and a light concentration layer covering the scattering layer. 16. The method of claim 15,
and disposing the reflection reduction layer is performed by coating a material for the reflection reduction layer on the lower surface of the substrate. 16. The method of claim 15,
The disposing of the reflection reduction layer may be performed by adhering the reflection reduction layer to a lower surface of the substrate.

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