KR101429942B1 - Organic Light Emitting Diode Display Device and Method for Manufacturing The Same - Google Patents

Abstract

An organic light emitting display according to an aspect of the present invention includes: a substrate; An antireflection film formed on one surface of the substrate and including at least one metal layer and at least one insulating layer; A driving element formed on the antireflection film and including a thin film transistor and a metal wiring; And an auxiliary metal interconnection formed on the antireflection film corresponding to the thin film transistor and the metal interconnection, wherein the thin film transistor includes a gate electrode, a gate insulating film, a source electrode, and a drain electrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display and a method of manufacturing the same, and more particularly, to an active organic light emitting display and a method of manufacturing the same.

Recently, as the information society has developed, a light and thin flat panel display has been actively developed. Typical flat panel display devices include a liquid crystal display device and an organic light emitting diode display device. The organic electroluminescent display device does not need a separate light source such as a backlight used in a liquid crystal display device, and is superior in color reproduction rate to realize a thinner and clearer image.

In such an organic light emitting display device, generally, pixels having three subpixels of red, green, and blue are arranged on the entire screen, and each subpixel is defined by intersecting a gate line and a data line. Each sub-pixel is independently driven by a driving element including a separate thin film transistor, and a thin film transistor and various metal wires are disposed inside the driving element. At this time, when the thin film transistor and the metal wiring of the driving element region reflect external light, the external visibility is deteriorated.

1 is a cross-sectional view showing a portion of a conventional active type organic electroluminescence display device (hereinafter referred to as an organic electroluminescence display device).

1, a conventional organic light emitting display device includes a polarizer 110 formed on a substrate 101 on which an organic light emitting device 120 and light emitted from the organic light emitting device 120 are directed to the outside do. The polarizer 110 includes a linear polarizer 111 and a? / 4 phase retarder 113 for minimizing reflection of light coming from the outside to improve external visibility and linearly polarizing incoming light. And a first adhesive layer 112 is formed between them to bond the respective layers. The polarizing plate 110 is attached to the substrate 101 by the second adhesive layer 114. The organic light emitting diode 120 includes an anode electrode 121, an organic light emitting layer 122, and a cathode electrode 123.

The light coming from the outside is linearly polarized through the linear polarizer 111, and then circularly polarized through the? / 4 phase delay plate 113. The circularly polarized extraneous light is mostly reflected by the cathode electrode 123 in the organic light emitting diode 120 and linearly polarized through the lambda / 4 phase delay plate 113, .

When reflection of external light is minimized by using the polarizer 110 as described above, only less than 45% of light emitted from the organic light emitting diode 120 is transmitted, and the brightness is reduced by half or more. Accordingly, if more power is used to compensate for the reduced luminance, the lifetime of the organic light emitting portion is reduced.

In addition, since the polarizing plate 110 is expensive, there is a disadvantage that the price competitiveness may be lowered when the polarizing plate 110 is applied only for the antireflection function.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic light emitting display capable of improving the lifetime and reducing the manufacturing cost.

According to an aspect of the present invention, there is provided an organic light emitting display including: a substrate; An antireflection film formed on one surface of the substrate and including at least one metal layer and at least one insulating layer; A driving element formed on the antireflection film and including a thin film transistor and a metal wiring; And an auxiliary metal interconnection formed on the antireflection film corresponding to the thin film transistor and the metal interconnection, wherein the thin film transistor includes a gate electrode, a gate insulating film, a source electrode, and a drain electrode.

According to an aspect of the present invention, there is provided a method of fabricating an organic light emitting display, including: forming an antireflection film including at least one metal layer and at least one insulating layer on one surface of a substrate; Depositing a metal on the anti-reflective coating; Patterning the deposited metal to form a gate electrode, a first metal line, and an auxiliary metal line; And forming a gate insulating film, an active layer, a source electrode, a drain electrode, and a second metal interconnection on the gate electrode.

According to another aspect of the present invention, there is provided a method of fabricating an organic light emitting display, including: forming an antireflection film including at least one metal layer and at least one insulating layer on one surface of a substrate; Forming a gate electrode and a first metal interconnection on the antireflection film; Forming a gate insulating film on the gate electrode and the first metal interconnection; Exposing the anti-reflection film by patterning the gate insulation film; Forming an active layer on the gate insulating layer; Forming a second metal interconnection on the exposed anti-reflection film; And forming a source electrode and a drain electrode on the active layer.

According to the present invention, it is possible to reduce the production cost by replacing an expensive polarizing plate by applying an antireflection film having a multilayer structure composed of a metal layer and an insulating layer to an organic light emitting display.

In addition, according to the present invention, there is an effect that the polarizer applied for preventing reflection can be removed in spite of a low transmittance, and the transmittance of the panel can be improved to increase the brightness.

Further, according to the present invention, an antireflection film having a high transmittance can be applied to reduce power consumption and improve lifetime.

1 is a cross-sectional view illustrating an anti-reflection structure of an organic light emitting display device using a general polarizing plate;
2 is a cross-sectional view illustrating an organic light emitting display device according to an embodiment of the present invention;
3 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention;
FIG. 4 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention; FIG. And
5 to 8 are cross-sectional views illustrating the antireflection principle of an antireflection film according to various embodiments of the present invention.

2 is a cross-sectional view of an organic light emitting display according to an embodiment of the present invention.

2, an organic light emitting display according to an exemplary embodiment of the present invention includes a substrate 210, an organic light emitting portion, a driving element portion and an antireflection layer 220, an antireflection layer 211, And a lens film (Micro Lens Film) 212.

First, the substrate 210 may be formed of glass, transparent or opaque flexible material or the like. Transparent flexible materials include polyimide, polyetherimide (PEI), and polyethyeleneterephthalate (PET).

Next, the organic light emitting portion refers to a region where the organic light emitting layer 270 is in contact with the anode electrode 260 and the cathode electrode 280, where white light is emitted. The emitted light passes through the color refiner 250 formed under the organic light emitting layer 270, and is converted into one of red, green, and blue, and is emitted to the outside of the substrate 210.

Next, the driving element portion includes the thin film transistor 230, the metal wiring 240, and the auxiliary metal wiring 235. [ In FIG. 2, the thin film transistor 230 is represented by only one electrode for convenience, but in an organic light emitting display, a thin film transistor includes two or more switching transistors and a driving transistor in one sub-pixel.

The thin film transistor 230 includes a gate electrode 231, a gate insulating film 237, source and drain electrodes 232 and 233, and an active layer 234. The metal wiring 240 may be conveniently divided into first and second metal wirings according to the formed layer. The metal wiring 240 formed on the antireflection film 220 may be divided into the first metal wiring and the metal wiring 240 formed on the gate insulating film 237 may be divided into the second metal wiring.

The metal wiring 240 includes a compensation circuit (not shown) formed inside the driving element, a gate line 241, a data line 242, and a power source voltage line 243. The compensation circuit includes wiring and circuit elements connecting the switching transistor and the driving transistor or connecting the anode electrode 260 and the cathode electrode 280 and can be designed in various shapes and complex shapes as shown in the drawings, Will be omitted. The compensation circuit may be divided into a first compensation circuit line formed on the antireflection film 220 and a second compensation circuit line formed on the gate insulation film 237 for the sake of convenience.

The auxiliary metal wiring 235 is formed in a region corresponding to the metal wiring 240 formed on at least one insulating film such as the source electrode 232 or the drain electrode 233 of the thin film transistor 230, 220 to reflect external light immediately. As described above, the metal wiring 240 formed on at least one insulating film may be a second metal wiring.

Next, the anti-reflection film 220 is formed on the substrate 210 to minimize the reflection of light coming from the outside. The antireflection film 220 may be formed on the entire surface of the substrate 210. When the antireflection film 220 is formed on the entire substrate 210, the antireflection film 220 absorbs light emitted from the organic light emitting layer 270 in the organic light emitting region, The lithography process can be eliminated, and the process can be simplified. The structure and antireflection principle of the antireflection film 220 will be described in detail with reference to FIG.

Next, the anti-reflection film 211 is formed on the other surface of the substrate 210 on which the anti-reflection film 220 is not formed. Since the reflection occurs also on the substrate 210 when the external light enters the inside of the panel, the anti-reflection film 211 functions to prevent reflection of the external light of the substrate 210. The antireflection film 211 may be formed in the form of a film and attached to the substrate 210 or may be formed on the surface of the substrate 210 on which the antireflection film 220 is not formed through a process such as deposition, But is not limited to description.

Next, the micro-lens film 212 may be formed on the substrate 210 or on the anti-reflection film 211. In the drawings, the anti-reflection film 211 is shown as being formed on the substrate 210, but it is not limited thereto and may be formed on one side or the other side of the substrate 210. When the microlens film 212 is applied, the light emitted from the organic light emitting layer 270 is trapped inside by the total reflection, and is not extinct. The micro lens film 212 may be formed in the form of a film and adhered to the substrate 210 or may be formed over the entire substrate 210 by one of processes including sputtering and chemical vapor deposition.

3 is a cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention.

As shown in FIG. 3, the organic light emitting display according to another embodiment of the present invention includes an anti-reflection layer 220 formed on a driving element region on a substrate 210. The antireflection film 220 is not formed on the organic light emitting region to prevent the light emitted from the organic light emitting region from being absorbed in the metal layer 221 of the antireflection film 220 to improve transmittance and brightness.

In order to form the antireflection film 220 in the driving element region except for the organic light emitting portion, a mask for forming the color refiner 250 layer or a mask for forming the bank layer 261 may be used. have. Therefore, since the anti-reflection film 220 can be formed without providing a separate mask, there is an advantage that the anti-reflection film 220 can be formed without significantly increasing the production cost.

4 is a cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention.

4, the antireflection film 220 according to another embodiment of the present invention is formed on one surface of the substrate 210 corresponding to the thin film transistor 230 and the metal wiring 240 in the driving element portion . The metal wiring 240 includes a compensation circuit formed in the driving element, a gate line 241, a data line 242 and a power supply voltage line 243.

The compensation circuit includes a thin film transistor (TFT) 230, a wiring for connecting the metal wiring to each other, a storage electrode, and the like. Such a compensation circuit can be variously designed according to the driving method of the organic light emitting display, so that the illustration thereof will be omitted.

Here, the spin-on prevention film 220 may be formed through a plurality of exposure processes using a conventional mask without adding a mask, or a single exposure process may be performed by adding a new mask. Adding a new mask has the effect of simplifying the process, and the use of existing masks has the effect of reducing manufacturing costs.

The gate electrode 241 and the gate electrode 231 are formed on the first surface of the substrate 210 after the anti-reflection film 220 is formed on the first surface of the substrate 210. [ And the mask used for forming the source and drain electrodes 232 and 233 in this order. Then, after the development process, the antireflection film 220 is formed only in the region shown in FIG. Since the gate line 241 is formed when the gate electrode 231 is formed and the data line 242 and the power source voltage line 243 are formed when forming the source and drain electrodes 232 and 233, The antireflection film 220 can be formed in the region corresponding to the region of the thin film transistor 230 and the metal wiring 240 with two masks.

5 is a cross-sectional view illustrating an anti-reflection film 220 and an anti-reflection principle according to an embodiment of the present invention.

5, the anti-reflective layer 220 includes at least one metal layer 221 and at least one insulating layer 222. The metal layer 221 may include at least one metal layer 221 and at least one insulating layer 222. Referring to FIG. The antireflection film 220 is formed by sequentially laminating a metal layer 221 and an insulating layer 222 on one surface of a substrate 210 and includes a metal layer 221 for improving the adhesion between the substrate 210 and the metal layer 221, An additional insulating layer (not shown) may be further formed between the substrate 210 and the substrate 210.

The process of preventing the reflection of external light by the antireflection film 220 of the present invention is roughly divided into two processes. One is the external light absorption process of the metal layer 221 and the other is the reflection of the first and second reflected lights R 1 and R 2 reflected by the gate line 241, which is one of the metal lines formed on the metal layer 221 and the driving element. It is a process of destruction of external light by destructive interference. Although only the gate line 241 is shown in FIG. 5, the metal wiring formed in the same layer as the gate line 241 can be prevented from reflection of external light by the same principle as shown in FIG. The metal wiring formed on the same layer as the gate line 241 may be divided into a first metal wiring. Also, although not the metal wiring, the gate electrode 231 of the thin film transistor 230 is also formed in the same layer as the gate line 241, and reflection of external light can be prevented as shown in FIG.

A part of the external light incident through the substrate 210 is reflected by the first reflected light R1 when the external light reaches the metal layer 221 and a part of the external light is reflected by the metal layer 221. [ And the remainder is transmitted. A part of the transmitted light passes through the insulating layer 222 again and is reflected from the gate line 241 to the second reflected light R2. At this time, if the phases of the first and second reflected lights R 1 and R 2 have opposite phases as shown in the figure, the first and second reflected lights R 1 and R 2 cancel each other out due to destructive interference.

In order to cause the destructive interference as described above, the metal layer 221 is formed of any one of metals including titanium (Ti), molybdenum (Mo), and chromium (Cr) . The insulating layer 222 is formed of any one of silicon oxide (SiO x), silicon nitride (SiN x), silicon oxynitride (SiON) and aluminum oxide (AlO x) among transparent inorganic materials and is formed to a thickness of about 500 Å to 3000 Å.

6 is a cross-sectional view illustrating an anti-reflection film 220 and an anti-reflection principle of an organic light emitting display according to another embodiment.

As shown in FIG. 6, a gate insulating film 237, which is an insulating film, is interposed between the metal wiring and the insulating layer 222. Although the data lines 242 are shown as metal wirings in FIG. 6, the metal wirings formed in the same layer as the data lines 242 are not limited thereto, and the first metal lines including the gate lines 241 And a second metal wiring separated from the metal wiring. Further, although the gate insulating film 237 is shown as an insulating film, it is not limited thereto. In the case of the insulating film, another insulating film may be interposed between the metal wiring and the insulating layer 222, or a plurality of insulating films may be interposed. The principle of effectively preventing the reflection of external light when the gate insulating film 237 is interposed between the metal wiring and the insulating layer 222 is explained.

5, a metal that does not transmit light should be formed on the insulating layer 222 of the antireflection film 220 formed in the order of the metal layer 221 and the insulating layer 222 in order to generate destructive interference. At this time, the first reflection light R1 reflected from the metal layer 221 and the second reflection light R2 reflected from the data line 242 formed on the insulating layer 222 overlap with the floor and the valleys, .

Thus, an auxiliary metal interconnection 235 is formed on the insulating layer 222 in a region corresponding to the data line 242. The auxiliary metal wiring 235 can be formed simultaneously with the same material as the gate electrode. As described above, since the auxiliary metal wiring 235 is formed on the insulating layer 222, external light transmitted through the metal film 221 can not be transmitted to the region where the data line 242 is formed, And the reflected light R2 becomes the second reflected light R2 and exits to the outside again. At this time, the second reflected light R 2 is canceled with the first reflected light R 1 reflected by the metal film 221 during the outgoing to prevent reflection of external light.

If the external light transmitted through the metal film 221 is reflected by the data line 245 after passing through the gate insulating film 237, the external light advances further by the thickness of the gate insulating film 237 and is reflected. Therefore, the second reflected light R 2 reflected from the data line 242 and the first reflected light R 1 reflected from the metal film 221 are not completely overlapped with the floor of the metal film 221, so that extinction of the light wave due to destructive interference does not occur Thereby preventing reflection of external light.

7 is a cross-sectional view illustrating an antireflection film 220 and an anti-reflection principle of an organic light emitting display according to another embodiment.

As shown in FIG. 7, a gate insulating film 237, which is an insulating film, is interposed between the metal wiring and the insulating layer 222.

In the figure, the power supply voltage line 243 is shown as a metal wiring, but not limited thereto, and all of the metal wiring formed on at least one insulating film may be applicable. As described in FIG. 6, . For example, a data line formed on the same layer as the power source voltage line 243 may also be applicable. The insulating film interposed between the metal wiring 240 and the insulating layer is not limited to the gate insulating film 237 but may be various insulating films and organic films.

7, a power supply voltage line 243 is formed on the insulating layer 222 without forming an auxiliary metal interconnection on the insulating layer 222, unlike in FIG. The gate insulating film 237 in the region where the power supply voltage line 243 is formed is etched so that the contact pattern 247 is formed so that the power supply voltage line 246 directly contacts the insulating layer 222, 246 are formed inside the contact pattern 247 and directly contact the insulating layer 222. Therefore, the second reflected light R 2 reflected from the power source voltage line 243 is canceled by destructive interference with the first reflected light R 1 reflected from the metal film 221.

At this time, the gate insulating film 237 in the region intersecting with the gate line should not be etched. When the gate insulating film 237 in the region intersecting the gate line is etched, the gate line and the data line or the power source voltage line 243 are directly in contact with each other and short-circuited. Therefore, it is preferable that the gate insulating film 237 is etched in a range that is insulated from other circuit wiring in the pixel.

8 is a cross-sectional view illustrating an antireflection film 220 and an anti-reflection principle of an organic light emitting display according to another embodiment.

8 is a cross-sectional view showing an antireflection film 220 and its periphery that can prevent external light reflection of the source electrode 232 and the drain electrode 233 of the thin film transistor 230. FIG.

An auxiliary metal wiring 235 is formed on the insulating layer 222 in a region corresponding to the source electrode 232 and the drain electrode 233 with the gate electrode 231 interposed therebetween. External light transmitted through the metal film 221 can not be transmitted to the region where the source electrode 232 and the drain electrode 233 are formed and the auxiliary metal interconnection 235 is formed on the insulating layer 222, It is blocked by the metal wiring 235, reflected therefrom, becomes the second reflected light R2, and exits to the outside again. At this time, similarly, the second reflected light R2 interferes with the first reflected light R1 reflected by the metal film 221 during the emission to the outside, thereby preventing reflection of external light.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

210: substrate 211: antireflection film
212: micro lens film 220: antireflection film
230: Thin film transistor 231: Gate electrode
232: source electrode 233: drain electrode
240: metal wiring 241: gate line
242: Data line 243: Power supply voltage line
250: Color Refiner 260: Anode electrode
261: bank layer 270: organic light emitting layer
280: cathode electrode

Claims (23)

Board;
An antireflection film formed on one surface of the substrate and including at least one metal layer and at least one insulating layer;
A driving element formed on the antireflection film and including a thin film transistor and a metal wiring including a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode; And
And a first auxiliary metal interconnection formed between the antireflection film under the source electrode and the drain electrode and the gate insulating film.
The method according to claim 1,
Wherein the first auxiliary metal interconnection is formed on the same layer as the gate electrode.
The method according to claim 1,
Wherein the metal interconnection includes a gate line, and the gate line is the same material as the auxiliary metal interconnection and the gate electrode.
The method according to claim 1,
Wherein the metal wiring includes a data line, and the data line is formed on the exposed antireflection film by etching the gate insulation film.
The method according to claim 1,
And the anti-reflection film is formed in a region corresponding to the driving element portion.
The method according to claim 1,
Wherein the antireflection film is formed in a region corresponding to the thin film transistor and the metal interconnection.
The method according to claim 1,
Wherein the metal layer comprises one of titanium (Ti), molybdenum (Mo), and chromium (Cr).
The method according to claim 1,
Wherein the insulating layer comprises any one of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), and aluminum oxide (AlOx).
The method according to claim 1,
Wherein at least one of an anti-reflection film and a micro-lens film is further formed on the other surface of the substrate.
Forming an antireflection film including at least one metal layer and at least one insulating layer on one surface of a substrate;
Depositing a metal on the anti-reflective coating;
Forming a gate electrode, a first metal interconnection, and a first auxiliary metal interconnection by patterning the deposited metal; And
Forming a gate insulating film, an active layer, a source electrode, a drain electrode, and a second metal interconnection on the gate electrode;
Lt; / RTI >
Wherein the first auxiliary metal interconnection is formed between the antireflection film under the source electrode and the drain electrode and the gate insulating film.
11. The method of claim 10,
Wherein the first metal interconnection includes a gate line and a first compensation circuit line, and the first metal interconnection is formed simultaneously with the gate electrode and the first auxiliary metal interconnection. ≪ / RTI >
11. The method of claim 10,
Wherein the second metal interconnection includes a data line, a power supply voltage line, and a second compensation circuit line, and the second metal interconnection is formed simultaneously with the source electrode and the drain electrode. ≪ / RTI >
11. The method of claim 10,
Wherein the antireflection film is formed in a region corresponding to the gate electrode, the source electrode, the drain electrode, the first metal interconnection, and the second metal interconnection.
11. The method of claim 10,
And forming at least one film of an anti-reflection film and a micro-lens film on the other surface of the substrate.
Forming an antireflection film including at least one metal layer and at least one insulating layer on one side of a substrate;
Forming a gate electrode, a first metal interconnection, and a first auxiliary metal interconnection on the antireflection film;
Forming a gate insulating film on the gate electrode, the first metal interconnection, and the first auxiliary metal interconnection;
Forming an active layer on the gate insulating layer; And
Forming a source electrode, a drain electrode, and a second metal interconnection on the active layer
Lt; / RTI >
Wherein the first auxiliary metal interconnection is formed between the antireflection film under the source electrode and the drain electrode and the gate insulating film.
16. The method of claim 15,
Wherein the first metal interconnection includes a gate line, and the gate line is formed simultaneously with the first auxiliary metal interconnection and the gate electrode.
16. The method of claim 15,
Wherein the second metal interconnection includes a data line, and the data line is formed simultaneously with the source electrode and the drain electrode.
16. The method of claim 15,
Wherein the second metal interconnection includes a power source voltage line and the power source voltage line is formed simultaneously with the source electrode and the drain electrode. The method of claim 1,
Wherein the metal interconnection includes a data line, and a second auxiliary metal interconnection is formed between the antireflection film under the data line and the gate insulating film.
11. The method of claim 10,
Wherein the second metal interconnection is formed on the antireflection film exposed by etching the gate insulating film.
11. The method of claim 10,
And a second auxiliary metal interconnection is formed between the antireflection film under the second metal interconnection and the gate insulating film.
16. The method of claim 15,
And exposing the anti-reflection film by patterning the gate insulation film,
Wherein the second metal interconnection is formed on the exposed anti-reflection film.
16. The method of claim 15,
And a second auxiliary metal interconnection is formed between the antireflection film under the second metal interconnection and the gate insulating film.

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