KR102327535B1 - substrate processing equipment - Google Patents

Abstract

A substrate processing apparatus includes: a spin base having an upper surface; a plurality of pins erected on the upper surface; a substrate holding unit for holding a substrate by the plurality of pins; and a substrate held by the substrate holding unit. a blocking member having a substrate-facing surface opposite to the upper surface and an inner peripheral surface opposite to both an outer peripheral end of the substrate held by the substrate holding unit and an outer peripheral end of the spin base; a rotation unit rotating about a rotation axis, and in a space defined by the upper surface, the substrate-facing surface, and the inner peripheral surface of the spin base, rotatable with rotation of at least one of the blocking member and the spin base and a positive pressure generating member formed at a position further away from the rotation axis than the pin, wherein the positive pressure generating member serves as a positive pressure region in a rotational direction rear of the positive pressure generating member as a result of rotation of at least one of the blocking member and the spin base includes

Description

substrate processing equipment

The present invention relates to a substrate processing apparatus. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for an FPD (Flat Panel Display) such as an organic EL (electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a magneto-optical device Substrates for disks, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like are included.

In a semiconductor device manufacturing process, in order to process the surface of substrates, such as a semiconductor wafer, with processing liquids, such as a chemical|medical solution, the single-wafer type substrate processing apparatus which processes a board|substrate one by one may be used. This single-wafer substrate processing apparatus includes, for example, a spin chuck for rotating a substrate while holding it substantially horizontally in a chamber, a nozzle for supplying a processing liquid to the substrate rotated by the spin chuck, and held by the spin chuck. A blocking member is provided opposite to the position close to the surface (upper surface) of the substrate. In the substrate processing apparatus, the spin chuck and the blocking member are rotated in the same direction in a state where the blocking member is brought close to the surface of the substrate after the rinsing process and an inert gas is filled between the blocking member and the surface of the substrate. In this way, the rinse liquid adhering to the surface of the substrate is shaken off and removed (dried).

The blocking member according to the following Patent Document 1 has a disk portion disposed above a substrate held by a spin chuck in order to more effectively block an upper space that is a space above a substrate and a lateral space that is a space on the side of the upper space. and a cylindrical portion that descends from the peripheral edge of the disk portion. That is, the blocking member has a substrate-facing surface facing the upper surface of the substrate held by the spin chuck, and an inner peripheral surface facing the outer peripheral end of the substrate held by the spin chuck.

US Patent Application Publication No. 2015/234296A1

However, when the substrate and the blocking member are rotated at high speed, the airflow is disturbed in the space between the outer periphery of the substrate and the blocking member (specifically, the outer periphery of the space between the substrate and the blocking member), and by the disturbance of this airflow, the substrate and In some cases, the surrounding atmosphere is sucked into the space between the blocking members. After the chemical treatment and rinsing treatment, the chamber is filled with an atmosphere containing chemical mist, so when an atmosphere containing chemical mist enters the space between the substrate and the blocking member, the chemical mist becomes particles and the substrate cause contamination. Moreover, in manufacturing processes, such as a semiconductor device and a liquid crystal display device, it may be desired to process a board|substrate in the state where the oxygen concentration in atmosphere is very low. When an atmosphere (air atmosphere) sufficiently containing oxygen enters the space between the substrate and the barrier member from the outside, there is a fear that the oxygen concentration in the atmosphere of the space between the substrate and the barrier member increases. Moreover, in manufacturing processes, such as a semiconductor device and a liquid crystal display device, it may be desired to process a board|substrate in the state where the humidity in an atmosphere is sufficiently low. When an atmosphere with high humidity enters the space between the substrate and the blocking member from the outside, there is a fear that the humidity in the atmosphere of the space between the substrate and the blocking member increases.

Conventionally, by supplying a large flow rate of inert gas from a central axis nozzle to the space between the substrate and the blocking member, the space between the substrate and the blocking member is maintained at a positive pressure, so that the space between the substrate and the blocking member is transferred to the space between the substrate and the blocking member. Ingress of outside air (external atmosphere) is suppressed.

Accordingly, it is an object of the present invention to provide a substrate processing apparatus capable of suppressing or preventing entry of external air into a space between a substrate and a blocking member without supplying a large flow rate of an inert gas.

The present invention provides a spin base having an upper surface, a substrate holding unit having a plurality of fins erected on the upper surface, the substrate holding unit for holding a substrate by the plurality of fins, and an upper surface of the substrate held by the substrate holding unit a blocking member having a substrate-facing surface facing the substrate and inner peripheral surfaces opposite to both an outer peripheral end of the substrate held by the substrate holding unit and an outer peripheral end of the spin base, and the spin base and the blocking member are rotated by a predetermined degree a rotation unit rotating about an axis, and in a space defined by the upper surface, the substrate facing surface, and the inner peripheral surface of the spin base, rotatable with rotation of at least one of the blocking member and the spin base; Further, a positive pressure generating member formed at a position farther than the pin with respect to the rotation axis, the positive pressure generating member having a positive pressure region behind the rotational direction of the positive pressure generating member with rotation of at least one of the blocking member and the spin base. It provides a substrate processing apparatus comprising.

According to this configuration, with the rotation of the blocking member and the spin base about the rotation axis, the positive pressure generating member also rotates about the rotation axis. With the rotation of the positive pressure generating member, a positive pressure region is formed behind the rotating positive pressure generating member in the rotational direction. Thereby, the annular region (hereinafter, referred to as the space outside region) radially outward with respect to the positive pressure generating member in the space becomes positive pressure. By maintaining this area outside the space at a positive pressure, it is possible to suppress or prevent the entry of outside air into the space.

In one embodiment of the present invention, the positive pressure generating member is formed such that the radial distance between the outer peripheral end of the spin base and the inner peripheral surface is narrower than the longest radial distance between the outer edge of the positive pressure generating member and the inner peripheral surface, have.

According to this configuration, the radial distance between the outer peripheral end of the spin base and the inner peripheral surface of the blocking member is formed to be narrower than the longest radial distance between the outer edge of the positive pressure generating member and the inner peripheral surface of the blocking member. It is possible to effectively suppress the outflow of the atmosphere to the outside of the space. Therefore, with the rotation of the positive pressure generating member, the region behind the positive pressure generating member can be easily maintained at the positive pressure.

If the radial distance between the outer peripheral end of the spin base and the inner peripheral surface of the blocking member is wider than the longest radial distance between the outer edge of the positive pressure generating member and the inner peripheral surface of the blocking member, the positive pressure generated by the rotation of the positive pressure generating member It is also conceivable that the atmosphere of , passes through the gap between the outer peripheral end of the spin base and the inner peripheral surface of the blocking member, and flows out to the outside of the space. As a result, it is conceivable that the area behind the positive pressure generating member and by extension the space outside does not become a positive pressure.

However, since the radial distance between the outer peripheral end of the spin base and the inner peripheral surface of the blocking member is formed to be narrower than the longest distance in the radial direction between the outer edge of the positive pressure generating member and the inner peripheral surface of the blocking member, the area outside the space can be set to positive pressure can

In one embodiment of the present invention, the positive pressure generating member includes a connection positive pressure generating member formed to be connected to the upper surface of the spin base and the substrate facing surface.

According to this configuration, when the positive connection pressure generating member rotates, the area in contact with the atmosphere inside the space is large. Therefore, a larger airflow can be generated by rotation of the positive connection pressure generating member, and the area outside the space can be made a further positive pressure.

In one embodiment of the present invention, the positive connection pressure generating member includes first and second engaging members respectively formed on the upper surface and the substrate facing surface of the spin base and engaged with each other, and the blocking member is supported by the spin base via first and second engaging members engaged with each other.

According to this configuration, since the positive connection pressure generating member also serves as the first and second engaging members, the number of parts is reduced compared to the case where the positive connection pressure generating member and the first and second engaging members are separately formed. can promote

In another embodiment of the present invention, the positive pressure generating member is formed on one of the upper surface of the spin base and the substrate-facing surface, and applies the positive pressure to the upper surface of the spin base and the one of the substrate-facing surface. It is formed so that the front-end|tip of the generating member may become larger than the distance with the board|substrate held by the said board|substrate holding unit.

According to this configuration, when the positive pressure generating member rotates, the area in contact with the atmosphere inside the space is large. Therefore, a larger airflow can be generated by the rotation of the positive pressure generating member, and the area outside the space can be made a further positive pressure.

The above-mentioned or another object, characteristic, and effect in this invention become clear by description of embodiment described next with reference to an accompanying drawing.

BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic diagram which looked at the substrate processing apparatus which concerns on 1st Embodiment of this invention from above.
2 is a schematic cross-sectional view for explaining a configuration example of a processing unit included in the substrate processing apparatus.
3 is a schematic plan view of a spin chuck provided in the processing unit.
4 is a bottom view of a blocking member provided in the processing unit.
Fig. 5 is a sectional view of the periphery of a first engaging member formed on the spin base of the spin chuck and a second engaging member formed on the blocking member.
Fig. 6 is a sectional view of the periphery of the outer periphery of the space between the spin base and the blocking member.
7 is a block diagram for explaining the electrical configuration of a main part of the substrate processing apparatus.
8 is a flowchart for explaining the contents of a substrate processing example executed in the processing unit.
9 is a schematic plan view for explaining the distribution of a positive pressure region generated in a space accompanying the rotation of the spin base and the blocking member.
10A to 10B are schematic views for explaining the above-described substrate processing example.
10C to 10D are schematic diagrams for explaining the process subsequent to FIG. 10B.
11 is a schematic cross-sectional view for explaining a configuration example of a processing unit according to a second embodiment of the present invention.
Fig. 12 is a sectional view of the periphery of the outer periphery of the space between the spin base and the blocking member.
Fig. 13 is a sectional view of the periphery of the outer periphery of the space between the spin base and the blocking member according to the third embodiment of the present invention.

<First embodiment>

FIG. 1 is a schematic diagram of a substrate processing apparatus 1 according to a first embodiment of the present invention viewed from above.

The substrate processing apparatus 1 is a single-wafer type apparatus which processes board|substrates W, such as a silicon wafer, one by one. In this embodiment, the board|substrate W is a disk-shaped board|substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 that treat a substrate W with a processing liquid and a rinse liquid, and a substrate container accommodating a plurality of substrates W processed by the processing unit 2 ; C) a load port LP on which the load port LP is mounted, an indexer robot IR and a substrate transfer robot CR that transfer the substrate W between the load port LP and the processing unit 2; A control device 3 for controlling the substrate processing apparatus 1 is included. Indexer robot IR conveys the board|substrate W between the board|substrate container C and the board|substrate conveyance robot CR. The substrate transfer robot CR transfers the substrate W between the indexer robot IR and the processing unit 2 . The plurality of processing units 2 have, for example, the same configuration.

2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2 . 3 is a schematic plan view of the spin chuck 5 provided in the processing unit 2 . 4 is a bottom view of the blocking member 6 provided in the processing unit 2 . 5 is a sectional view of the periphery of the first engaging member 55 formed on the spin base 18 of the spin chuck 5 and the second engaging member 51 formed on the blocking member 6 . 6 is a cross-sectional view of the periphery of the outer periphery of the space SP partitioned between the spin base 18 and the blocking member 6 . FIG. 6 is viewed along the section line VI-VI of FIG. 4 .

As shown in FIG. 2 , the processing unit 2 holds a box-shaped chamber 4 and a single substrate W in the chamber 4 in a horizontal posture, so that the center of the substrate W is adjusted. A spin chuck (substrate holding unit) 5 for rotating the substrate W around a vertical rotation axis A1 passing therethrough, and a blocking member facing the upper surface of the substrate W held by the spin chuck 5 (6) and a central axis nozzle (7) for discharging the processing liquid toward the central portion of the upper surface of the substrate (W) held by the spin chuck (5) by vertically passing through the inside of the blocking member (6) and a chemical liquid supply unit 8 for supplying a chemical liquid to the central axis nozzle 7 , a rinse liquid supply unit 9 for supplying a rinse liquid to the central axis nozzle 7 , and a central axis nozzle 7 . to the organic solvent supply unit 10 for supplying the organic solvent as a low surface tension liquid having a specific gravity greater than that of air and having a surface tension lower than that of water, and to the central shaft nozzle 7, supplying a liquid hydrophobizing agent a hydrophobicizing agent supply unit 11 for 13) is included.

As shown in FIG. 2 , the chamber 4 has a box-shaped partition 14 for accommodating the spin chuck 5, and clean air (air filtered by a filter) in the partition 14 from the upper portion of the partition 14. ), an FFU (fan filter unit) 15 as a blower unit, and an exhaust duct 16 for discharging gas in the chamber 4 from the lower portion of the partition wall 14 . The FFU 15 is disposed above the partition wall 14 and is attached to the ceiling of the partition wall 14 . The FFU 15 sends clean air downward into the chamber 4 from the ceiling of the partition wall 14 . The exhaust duct 16 is connected to the bottom of the processing cup 13 , and exhausts the gas in the chamber 4 toward an exhaust treatment facility formed in a factory where the substrate processing apparatus 1 is installed. Accordingly, a downflow (downflow) flowing downward through the chamber 4 is formed by the FFU 15 and the exhaust duct 16 . The processing of the substrate W is performed in the state in which the downflow is formed in the chamber 4 .

As shown in FIG. 2 , as the spin chuck 5 , a chuck of a clamping type in which the substrate W is sandwiched in the horizontal direction to hold the substrate W horizontally is employed. Specifically, the spin chuck 5 includes a spin motor (rotation unit) M, a spin shaft 17 integrated with a drive shaft of the spin motor M, and a substantially horizontal upper end of the spin shaft 17 . It includes a spin base (18) on a disc-shaped mounted rigidly.

2 and 3, on the upper surface 18a of the spin base 18, a plurality (3 or more, for example, 4) pinching pins (pins) 19 are provided at the peripheral edge thereof. is placed. The plurality of pinching pins 19 are arranged at an appropriate interval (for example, at equal intervals) on a circumference corresponding to the outer circumference shape of the substrate W in the outer circumference portion of the upper surface 18a of the spin base 18. . On the upper surface 18a of the spin base 18, on the circumference centered on the rotation axis A1, a plurality (three or more) for contacting the blocking member 6 and supporting the blocking member 6 from below .For example, three) 1st engaging members 55 are arrange|positioned. The plurality of first engaging members 55 are arranged at appropriate intervals (eg, at equal intervals) on the circumference of the outer circumference of the upper surface 18a of the spin base 18 and having a larger diameter than that of the outer circumference of the substrate W. is placed with The distance between the 1st engaging member 55 and the rotation axis A1 is set larger than the distance between the pinching pin 19 and the rotation axis A1. That is, as will be described later, the first engaging member 55 , which forms the positive pressure generating member 63 by the second engaging member 51 , is located farther from the rotation axis A1 than the pinching pin 19 . is formed in

As shown in FIG. 2 , the blocking member 6 is a driven blocking member that rotates according to the spin chuck 5 . That is, the blocking member 6 is integrally rotatably supported by the spin chuck 5 during substrate processing. The blocking member 6 includes a blocking plate 21 , an engaging member 22 provided so as to be able to move up and down together with the blocking plate 21 , and the engaging member 22 to engage the blocking plate 21 from above. and a support 23 for supporting.

The blocking plate 21 is a disk shape larger than the diameter of the board|substrate W. As shown in FIG. The blocking plate 21 includes a disk portion 61 held in a horizontal posture, and a cylindrical portion 62 extending downward from the outer periphery of the disk portion 61 . The disk portion 61 is coaxial with the cylindrical portion 62 . The disk portion 61 is disposed above the lower end of the cylindrical portion 62 .

The blocking plate 21 includes a cup-shaped inner surface concave downward. The inner surface of the blocking plate 21 has a substrate-facing surface 21a opposite to the upper side of the upper surface of the substrate W, and with the blocking member 6 in the blocking position, the outer periphery of the substrate W and the spin and an inner peripheral surface 21b opposite to an outer peripheral surface (outer peripheral end) 18b of the base 18 . The lower surface of the disk part 61 corresponds to the board|substrate opposing surface 21a. The substrate opposing surface 21a is a flat surface parallel to the upper surface of the substrate W.

The inner peripheral surface of the cylindrical portion 62 corresponds to the inner peripheral surface 21b. The inner peripheral surface 21b includes an annular inner inclined portion extending obliquely downwardly outward from the substrate-facing surface 21a. This inner inclined portion has an arc-shaped cross section in which the angle of inclination with respect to the rotation axis A1 continuously changes. The cross section of this inner slope part is open downward. The inner diameter of the inner peripheral surface 21b is increasing as it approaches the lower end of the inner peripheral surface 21b. The lower end of the inner peripheral surface 21b has an inner diameter larger than the outer diameter of the spin base 18 .

The blocking plate 21 is formed on the substrate opposing surface 21a and further has a plurality of second engaging members 51 for engaging the first engaging members 55 . A through hole 24 penetrating the blocking member 6 up and down is formed in the central portion of the substrate facing surface 21a. The through hole 24 is partitioned by a cylindrical inner peripheral surface. The number of 2nd engagement members 51 is the same as that of the 1st engagement members 55, and the 1st engagement member 55 (refer FIG. 3 together) and the one-to-one correspondence are formed.

The first engaging member 55 and the second engaging member 51 will be described with reference to FIG. 5 . 5 shows a state in which engagement between the blocking member 6 and the spin chuck 5 is released.

The second engaging member 51 includes a main body 52 formed of a resin such as PEEK (polyether ether ketone) resin, and a permanent magnet 53 . A part of the body part 52 is embedded and fixed in the disc part 61 , and the remaining part projects downward from the substrate-facing surface 21a of the disc part 61 . A concave portion 51a is formed in the lower end of the body portion 52 .

The first engaging member 55 is made of metal, for example. A part of the main body 56 of the first engaging member 55 is embedded and fixed in the spin base 18 , and the remaining part protrudes upward from the upper surface of the spin base 18 . A convex portion 55a is formed at the upper end of the first engaging member 55 . The concave portion 51a and the convex portion 55a are fitted, and the permanent magnet 53 of each second engaging member 51 and the corresponding first engaging member 55 are attracted to each other, The first engaging member 55 and the second engaging member 51 are engaged. And even after engagement, the permanent magnet 53 of the 2nd engagement member 51 and the 2nd engagement member 51 attract each other, so that the 1st engagement member 55 and the 2nd engagement member ( 51) is maintained. The blocking member 6 is supported by the spin base 18 via a first engaging member 55 and a second engaging member 51 engaged with each other.

The first engaging member 55 is a positive pressure generating member (connection) in which the rotational direction rear of the first engaging member 55 serves as a positive pressure region with the rotation of the blocking member 6 and the spin base 18 . positive pressure generating member) 63 . In addition, the second engaging member 51 is a positive pressure generating member (positive pressure generating member) in which the rotational direction rear of the second engaging member 51 is a positive pressure region with the rotation of the blocking member 6 and the spin base 18. connection positive pressure generating member) 63 . In this embodiment, the positive pressure generating member 63 includes the first engaging member 55 and the second engaging member 51 . Therefore, the positive pressure generating member 63 is formed so as to be connected to the upper surface 18a of the spin base 18 and the substrate-facing surface 21a of the blocking plate 21 .

As shown in FIG. 2 , the engaging member 22 includes a cylindrical portion 25 surrounding the periphery of the through hole 24 on the upper surface of the blocking plate 21 , and the upper end of the cylindrical portion 25 . and a flange portion 26 extending radially outward. The flange portion 26 is located above the flange support portion 28 to be described below included in the support portion 23 , and the outer periphery of the flange portion 26 has a larger diameter than the inner periphery of the flange support portion 28 . has been

The support part 23 includes, for example, a substantially disk-shaped support part main body 27 , a horizontal flange support part 28 , and a connection part 29 connecting the support part main body 27 and the flange support part 28 .

The central axis nozzle 7 extends in the vertical direction along a vertical axis passing through the centers of the blocking plate 21 and the substrate W, that is, the rotation axis A1. The central axis nozzle 7 is disposed above the spin chuck 5 , and passes through the internal space of the blocking plate 21 and the support part 23 . The central axis nozzle 7 moves up and down together with the blocking plate 21 and the support part 23 .

The central axis nozzle 7 includes a cylindrical casing 30 extending vertically through the inside of the through hole 24, and a first nozzle pipe 31 that is vertically inserted and passed through the inside of the casing 30, respectively; The second nozzle pipe 32 , the third nozzle pipe 33 , and the fourth nozzle pipe 34 are included. The casing 30 has a cylindrical outer peripheral surface 30a and a substrate opposing surface 30b formed at the lower end of the casing 30 and opposing to the central portion of the upper surface of the substrate W. The 1st - 4th nozzle piping 31-34 are inner tubes, respectively.

A blocking member lifting unit 35 for raising and lowering the blocking member 6 by elevating the supporting portion 23 is coupled to the support 23 . The blocking member lifting/lowering unit 35 has a configuration including a servo motor, a ball screw mechanism, and the like. The blocking member lifting unit 35 raises and lowers the blocking member 6 and the first to fourth nozzle pipes 31 to 34 together with the support part 23 in the vertical direction. The blocking member elevating unit 35 has a substrate-facing surface 21a of the blocking plate 21 close to the upper surface of the substrate W held by the spin chuck 5 and is located at the lower end of the cylindrical portion 62 . Between the blocking position (a position indicated by a broken line in Fig. 2) whose height is lower than the height of the substrate W (a position indicated by a broken line in Fig. 2) and a retracted position (a position indicated by a solid line in Fig. 2) that is retracted higher than the blocking position (a position indicated by a solid line in Fig. 2), the barrier plate ( 21) and the first to fourth nozzle pipes 31 to 34 are raised and lowered. The blocking position is a position where the substrate opposing surface 221a forms a space SP (refer to FIG. 6 ) as a blocking space between the substrate opposing surface 221a and the upper surface of the substrate W. As shown in FIG. The space SP is not completely isolated from the space around it. However, the space SP is substantially blocked from the surrounding space. The blocking member raising/lowering unit 35 can raise/lower the support part 23 between a blocking position and a retracted position. Thereby, the blocking plate 21 of the blocking member 6 can be raised and lowered between the blocking position close to the upper surface of the substrate W held by the spin chuck 5 and the retracted position. The blocking member lifting unit 35 can position the blocking member 6 at any height position between the blocking position and the retracted position.

Specifically, in the state in which the support part 23 is located in the retracted position, the flange support part 28 and the flange part 26 of the support part 23 engage with each other, so that the engaging member 22 and the blocking plate 21 are engaged. ) and the central shaft nozzle 7 are supported by the support 23 . That is, the blocking plate 21 is suspended by the support 23 . In the state in which the support part 23 is located in the retracted position, the projection 28a protrudingly formed on the upper surface of the flange support part 28 is engaged with the engaging hole 26a formed in the flange part 26 at intervals in the circumferential direction. By fitting, the blocking plate 21 is positioned in the circumferential direction with respect to the support 23 .

When the blocking member raising/lowering unit 35 lowers the support part 23 from the retracted position, the blocking plate 21 also descends from the retracted position. Thereafter, when the second engaging member 51 of the blocking plate 21 abuts against the first engaging member 55 , the blocking plate 21 and the central shaft nozzle 7 engage the first engaging member ( 55) is accepted. And when the blocking member raising/lowering unit 35 lowers the support part 23, engagement of the flange support part 28 of the support part 23 and the flange part 26 is released, and the engaging member 22 and the blocking plate (21) and the central axis nozzle (7) are separated from the support (23), and are supported by the spin base (18). In this state, when the spin base 18 is rotated, with the rotation of the spin base 18, the blocking plate 21 is rotated around the rotation axis A1.

In FIG. 6, the state in which the blocking member 6 is arrange|positioned at the blocking position is shown. In the state where the blocking member 6 is disposed in the blocking position, a space SP, which is a blocking space, is formed between the spin base 18 and the blocking plate 21 . Specifically, the space SP refers to a space partitioned by the upper surface 18a of the spin base 18 , the substrate opposing surface 21a , and the inner peripheral surface 21b .

The "distance D1" is the outer peripheral surface (outer peripheral end) 18b of the spin base 18 and the inner peripheral surface of the cylindrical portion 62 of the blocking plate 21 when the blocking member 6 is disposed in the blocking position. (21b) means the distance in the radial direction Ds. The "distance D2" is the diameter of the outer edge of the positive pressure generating member 63 and the inner peripheral surface 21b of the cylindrical portion 62 of the blocking plate 21 when the blocking member 6 is disposed in the blocking position. It means the longest distance in the direction (Ds). The outer edge of the positive pressure generating member 63 refers to an outer end portion in the radial direction Ds of the outer peripheral surface of the positive pressure generating member 63 . In this embodiment, the outer edge of the positive pressure generating member 63 refers to the outer end portion of the second engaging member 51 having a larger diameter in the radial direction Ds. That is, "the longest distance in the radial direction Ds between the outer edge of the positive pressure generating member 63 and the inner peripheral surface 21b of the cylindrical portion 62 of the blocking plate 21" in this embodiment is the second It is the distance in the radial direction Ds with the inner peripheral surface 21b in the front-end|tip part (lower end) of the fitting member 51. FIG.

The "radial direction (Ds)" means the radial direction of the disk-shaped blocking plate 21 . The radial direction of the blocking plate 21 is also the radial direction of the disk-shaped spin base 18 . The "radial direction Ds" also coincides with the rotational radial directions of the substrate W and the blocking plate 21 accompanying the rotation of the spin base 18 . It is the same in this specification.

The distance D1 is shorter (narrower) than the distance D2. When the blocking member 6 is disposed in the blocking position, the distance D1 is, for example, about 2.5 mm, and the distance D2 is, for example, about 6 mm.

As shown in FIG. 2 , the first nozzle pipe 31 includes a vertical portion extending along the vertical direction. As shown in FIG. 4 , the lower end of the first nozzle pipe 31 is opened in the substrate-facing surface 30b of the casing 30 to form the first discharge port 31a. The chemical liquid from the chemical liquid supply unit 8 is supplied to the first nozzle pipe 31 . The chemical solution supply unit 8 includes a chemical solution pipe 36 connected to the upstream end of the first nozzle pipe 31 , and a chemical solution valve 37 interposed in the middle of the chemical solution pipe 36 . The first flow control valve 38 includes a valve body having a valve seat formed therein, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. The same is true for other flow control valves.

When the chemical liquid valve 37 is opened while the rinse liquid valve 40 described below remains closed, the chemical liquid is discharged downward from the first discharge port 31a. When the chemical liquid valve 37 is closed, the discharge of the chemical liquid from the first discharge port 31a is stopped. The discharge flow rate of the chemical liquid from the first discharge port 31a is adjusted by the first flow rate control valve 38 . The chemical is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide, organic acids (eg, citric acid, oxalic acid, etc.), organic alkalis (eg, TMAH: tetramethylammonium hydroxide, etc.); The liquid containing at least 1 of surfactant and a corrosion inhibitor may be sufficient.

As shown in FIG. 2 , the rinse liquid from the rinse liquid supply unit 9 is also supplied to the first nozzle pipe 31 . The rinse solution supply unit 9 includes a rinse solution pipe 39 connected to the upstream end of the first nozzle pipe 31 , and a rinse solution valve 40 interposed in the middle of the rinse solution pipe 39 ; , and a second flow rate control valve 41 that adjusts the opening degree of the rinse liquid pipe 39 . When the rinse liquid valve 40 is opened while the chemical liquid valve 37 is closed, the rinse liquid is discharged downward from the second discharge port 32a. When the rinse liquid valve 40 is closed, the discharge of the rinse liquid from the second discharge port 32a is stopped. The discharge flow rate of the rinse liquid from the second discharge port 32a is adjusted by the second flow rate control valve 41 . The rinse solution is water. In this embodiment, the water is any of pure water (deionized water), carbonated water, electrolytic ionized water, hydrogen water, ozone water, and ammonia water having a dilution concentration (eg, about 10 to 100 ppm).

As shown in FIG. 2 , the second nozzle pipe 32 includes a vertical portion extending along the vertical direction. As shown in FIG. 4 , the lower end of the second nozzle pipe 32 is opened to the substrate-facing surface 30b of the casing 30 to form the second discharge port 32a. The organic solvent which is a liquid from the organic-solvent supply unit 10 is supplied to the 2nd nozzle piping 32 . The organic solvent supply unit 10 includes an organic solvent pipe 42 connected to the upstream end of the second nozzle pipe 32 , and an organic solvent valve 43 interposed in the middle of the organic solvent pipe 42 , , and a third flow control valve 44 that adjusts the opening degree of the organic solvent pipe 42 . When the organic solvent valve 43 is opened, the liquid organic solvent is discharged downward from the second discharge port 32a. When the organic solvent valve 43 is closed, the discharge of the liquid organic solvent from the second discharge port 32a is stopped. The discharge flow rate of the organic solvent which is a liquid from the 2nd discharge port 32a is adjusted by the 3rd flow volume control valve 44 .

In this embodiment, the organic solvent is, for example, IPA (isopropyl alcohol), but as such an organic solvent, other than IPA, for example, methanol, ethanol, acetone, EG (ethylene glycol) and HFE (hydrofluoro ether) can be exemplified. Moreover, as an organic solvent, not only the case where it consists only of a single component, but the liquid mixed with other components may be sufficient. For example, the liquid mixture of IPA and acetone may be sufficient, and the liquid mixture of IPA and methanol may be sufficient.

As shown in FIG. 2 , the third nozzle pipe 33 includes a vertical portion extending along the vertical direction. As shown in FIG. 4 , the lower end of the third nozzle pipe 33 is opened in the substrate-facing surface 30b of the casing 30 to form the third discharge port 33a. The third nozzle pipe 33 is supplied with a hydrophobizing agent which is a liquid from the hydrophobizing agent supply unit 11 . The hydrophobizing agent supply unit 11 includes a hydrophobizing agent pipe 45 connected to the upstream end of the third nozzle pipe 33 , and a hydrophobizing agent valve 46 interposed in the middle of the hydrophobizing agent pipe 45 , , and a fourth flow rate control valve 47 for adjusting the degree of opening of the hydrophobizing agent pipe 45 . When the hydrophobicizing agent valve 46 is opened, a liquid hydrophobicizing agent is discharged from the third discharge port 33a downward. When the hydrophobizing agent valve 46 is closed, the discharge of the hydrophobicizing agent as a liquid from the third discharge port 33a is stopped. The discharge flow rate of the hydrophobizing agent which is a liquid from the 3rd discharge port 33a is adjusted by the 4th flow rate regulating valve 47. As shown in FIG. The hydrophobizing agent may be a silicone-based hydrophobizing agent or a metal-based hydrophobizing agent.

The silicone-based hydrophobizing agent is a hydrophobizing agent that hydrophobizes silicon (Si) itself and a compound containing silicon. The silicone-based hydrophobizing agent is, for example, a silane coupling agent. The silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilanes, alkyldisilazanes, and non-chloro-based hydrophobizing agents. The non-chloro-based hydrophobizing agent is, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane , N-(trimethylsilyl)dimethylamine and at least one of an organosilane compound.

As shown in FIG. 2 , a metal-based hydrophobizing agent is, for example, a solvent that has high coordination properties and mainly hydrophobizes a metal by a coordination bond. The hydrophobizing agent contains, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.

As shown in FIG. 4 , the fourth nozzle pipe 34 includes a vertical portion extending along the vertical direction. The lower end of the fourth nozzle pipe 34 is opened in the substrate-facing surface 30b of the casing 30 to form a fourth discharge port 34a. An inert gas from the inert gas supply unit 12 is supplied to the fourth nozzle pipe 34 . The inert gas supply unit 12 includes an inert gas pipe 48 connected to the upstream end of the fourth nozzle pipe 34 , and an inert gas valve 49 interposed in the middle of the inert gas pipe 48 , , a fifth flow control valve 50 for adjusting the opening degree of the inert gas pipe 48 . When the inert gas valve 49 is opened, the inert gas is discharged downward from the fourth discharge port 34a. When the inert gas valve 49 is closed, the discharge of the inert gas from the fourth discharge port 34a is stopped. The discharge flow rate of the inert gas from the fourth discharge port 34a is adjusted by the fifth flow rate control valve 50 . The inert gas is not limited to nitrogen gas, and may be other inert gas such as helium gas or argon gas. Moreover, nitrogen gas may be sufficient as an inert gas, and the mixed gas of nitrogen gas and gas other than nitrogen gas may be sufficient as it.

Moreover, the normal cylindrical clearance gap 65 is formed by the normal outer peripheral wall 7a of the central axis nozzle 7, and the normal inner peripheral wall 24a of the through-hole 24. As shown in FIG. Normally, the gap 65 functions as a flow path through which the inert gas flows. The lower end of the normal gap 65 is opened in an annular shape surrounding the central axis nozzle 7 to form a peripheral central gas discharge port 66 .

As shown in FIG. 2 , the processing cup 13 is disposed outside the substrate W held by the spin chuck 5 (in the direction away from the rotation axis A1 ). The processing cup 13 surrounds the spin base 18 . When the processing liquid is supplied to the substrate W while the spin chuck 5 is rotating the substrate W, the processing liquid supplied to the substrate W is shaken off around the substrate W. When the processing liquid is supplied to the substrate W, the upper end 13a of the processing cup 13 opened upward is disposed above the spin base 18 . Accordingly, the processing liquid such as the chemical liquid or water discharged around the substrate W is received by the processing cup 13 . Then, the treatment liquid received in the treatment cup 13 is sent to a recovery treatment facility or waste liquid treatment facility (not shown).

7 is a block diagram for explaining the electrical configuration of a main part of the substrate processing apparatus 1 .

The control device 3 is configured using, for example, a microcomputer. The control device 3 has an arithmetic unit such as a CPU, a storage unit such as a fixed memory device, a hard disk drive, and an input/output unit. The storage unit stores a program to be executed by the arithmetic unit.

In addition, the control device 3 is connected to a spin motor M, a blocking member lifting/lowering unit 35, and the like as control objects. The control device 3 controls the operations of the spin motor M and the blocking member lifting unit 35 and the like according to a predetermined program.

In addition, the control device 3 controls the chemical liquid valve 37 , the rinse liquid valve 40 , the organic solvent valve 43 , the hydrophobizing agent valve 46 , the inert gas valve 49 and the like according to a predetermined program. open and close In addition, the control device 3 includes the first flow control valve 38 , the second flow control valve 41 , the third flow control valve 44 , and the fourth flow control valve 47 according to a predetermined program. , adjust the opening degree of the fifth flow control valve 50 and the like.

Hereinafter, the case of processing the board|substrate W in which the pattern was formed in the surface (upper surface) which is a device formation surface is demonstrated. The substrate W to be processed is, for example, a silicon wafer, and a pattern is formed on the surface as the pattern formation surface. This pattern is, for example, a fine pattern.

8 is a flowchart for explaining the contents of an example of substrate processing performed in the processing unit 2 . 9 is a schematic plan view for explaining the distribution of the positive pressure region Pa generated in the space SP with the rotation of the spin base 18 and the blocking member 6 . 10A to 10D are schematic views for explaining an example of substrate processing. A substrate processing example will be described with reference to FIGS. 1 to 8 . Reference is made appropriately to Figs. 9 to 10D.

An inert gas having a small flow rate (eg, 10 (liter/min)) is discharged from the peripheral central gas discharge port 66 . The discharge of the inert gas from the peripheral central gas discharge port 66 is continuously performed from the start of the substrate processing to the end of the substrate processing.

The unprocessed substrate W (for example, a circular substrate having a diameter of 300 mm) is loaded into the processing unit 2 from the substrate receiver C by the indexer robot IR and the substrate transfer robot CR, 4) is carried in, the substrate W is handed over to the spin chuck 5 in a state in which the surface (the surface to be processed, the pattern formation surface in this embodiment) is facing upward, and the substrate W is transferred to the spin chuck 5 W) is maintained (S1 in FIG. 8: substrate W is carried in).

After the substrate transfer robot CR evacuates to the outside of the processing unit 2 , the control device 3 controls the blocking member raising/lowering unit 35 to place the blocking plate 21 in the blocking position. Thereby, the blocking plate 21 and the central shaft nozzle 7 are received by the first engaging member 55 , and the blocking plate 21 and the central shaft nozzle 7 are supported by the spin base 18 . .

After the blocking plate 21 is disposed in the blocking position (after the blocking plate 21 is supported on the spin base 18), then, the control device 3 controls the spin motor M to control the spin base ( 18) is increased to a predetermined liquid processing speed (within the range of about 10-1200 rpm, for example, about 800 rpm), and maintained at the liquid processing speed (S2 in FIG. 8: substrate W) start of rotation). Accompanying the rotation of the spin base 18 , the substrate W is rotated around the rotation axis A1 . Further, with the rotation of the spin base 18 , the blocking plate 21 is rotated around the rotation axis A1 . With rotation around the rotation axis A1 of the blocking plate 21 and the spin base 18 , the positive pressure generating member 63 (that is, the first engaging member 55 and the second engaging member 51 ) ) also rotates around the axis of rotation A1. Thereby, as shown in FIG. 9, the positive pressure area|region Pa is formed behind the rotation direction Dr of the positive pressure generating member 63 which is rotating. Such a phenomenon occurs because the positive pressure generating member 63 (55, 51) passes at high speed through the narrow space between the positive pressure generating member 63 and the inner peripheral surface 21b of the blocking plate 21, so that the increased pressure is generated by the positive pressure generating member. It is thought to generate|occur|produce by being open|released behind the rotation direction Dr of the member 63. Thereby, in the inside of the space SP, the annular region SP1 outside the positive pressure generating member 63 (55, 51) in the radial direction Ds (hereinafter referred to as “space outside region SP1”). ) is the positive pressure. On the other hand, in the inside of the space SP, the annular region SP2 inside the positive pressure generating member 63 (55, 51) in the radial direction Ds (hereinafter referred to as “space inner region SP2”). ) is promoted outward in the radial direction Ds by the action of centrifugal force generated with the rotation of the blocking plate 21 and the spin base 18, thereby becoming a negative pressure. At this time, as shown in FIG. 6 , the relationship between the pressure P1 in the space outer region SP1 , the pressure P2 in the space inner region SP2 , and the pressure P outside the space SP OS is P1 > P > P2. However, when the rotational speed of the rotation of the blocking plate 21 and the spin base 18 is slow, the pressure P outside the OS is considered to be close to the pressure P2 in the space inner region SP2. have.

Moreover, as described above, the positive pressure generating member 63 constituted by the first engaging member 55 and the second engaging member 51 is disposed between the upper surface 18a of the spin base 18 and the substrate facing surface. Since it is formed so that it may connect to 21a, when the positive pressure generating member 63 rotates, the area in contact with the atmosphere inside the space SP is large. Therefore, by rotating the positive pressure generating member 63 , the positive pressure can be further increased in the rear of the positive pressure generating member 63 in the rotational direction.

Further, as described above, since the distance D1 is shorter than the distance D2, it is possible to effectively suppress the outflow of the atmosphere from the space outside region SP1 to the space SP outside the OS. If the distance D1 is larger (wider) than the distance D2, even if the positive pressure region Pa is generated with the rotation of the positive pressure generating member 63, the atmosphere contained in the positive pressure region Pa is the spin base 18 ) passing through a gap between the outer peripheral surface (outer peripheral end) 18b of the blocking member 6 and the inner peripheral surface 21b of the blocking member 6 and flowing out to the outside of the space SP OS is also considered. As a result, the case where formation of the positive pressure area|region Pa in space outer area|region SP1 is inhibited is also considered. However, since the distance D1 is shorter than the distance D2, the outflow of the atmosphere to the outside can be effectively suppressed, whereby the space outside region SP1 can be maintained at a positive pressure.

After the rotation of the substrate W is started, the control device 3 executes a chemical solution step S3 (refer to FIG. 8 ) of supplying a chemical solution to the upper surface of the substrate W . Specifically, the control device 3 opens the chemical liquid valve 37 while maintaining the rotation of the substrate W at the liquid processing speed. Therefore, as shown in FIG. 10A, the chemical|medical solution is discharged from the 1st discharge port 31a of the central axis nozzle 7 toward the upper surface of the board|substrate W in a rotation state. The chemical solution supplied to the upper surface of the substrate W receives a centrifugal force caused by the rotation of the substrate W and moves to the peripheral portion of the substrate W. Thereby, the whole area of the upper surface of the board|substrate W is processed using a chemical|medical solution.

In the chemical solution step S3, depending on the type of the chemical (when THAH or the like is used as the chemical solution), the atmosphere in the space SP is maintained at a low oxygen concentration in order to treat the substrate W favorably using the chemical solution. There is a need. In the chemical liquid step S3, since the space outside region SP1 can be maintained at a positive pressure, entry of external air (gas containing oxygen) into the space SP can be suppressed or prevented, and thereby the atmosphere in the space SP can be maintained at a low oxygen concentration.

When a predetermined period has elapsed from the start of discharging the chemical, the control device 3 closes the chemical valve 37 to stop discharging the chemical from the central shaft nozzle 7 (the first nozzle pipe 31 ). . Thereby, the chemical|medical solution process S3 is complete|finished.

Next, the control device 3 executes a rinsing step S4 (refer to FIG. 8 ) for replacing the chemical solution on the substrate W with the rinse solution to remove the chemical solution from the substrate W. Specifically, the control device 3 opens the rinse liquid valve 40 while maintaining the rotation of the substrate W at the liquid processing speed. Thereby, the rinse liquid is discharged from the 1st discharge port 31a of the central shaft nozzle 7 (1st nozzle pipe 31) toward the upper surface center part of the board|substrate W. As shown in FIG. The rinsing liquid supplied to the upper surface central portion of the substrate W receives a centrifugal force caused by the rotation of the substrate W and moves to the peripheral portion of the substrate W. Thereby, the chemical|medical solution on the upper surface of the board|substrate W is replaced with a rinse solution.

The rinsing liquid is discharged from the peripheral edge of the substrate W toward the side. The rinse liquid discharged from the periphery of the substrate W is received by the inner peripheral surface 21b of the blocking member 6 and then is scattered laterally from the lower end of the cylindrical portion 62 of the blocking plate 21 . .

When a predetermined period elapses after the rinse liquid valve 40 is opened, the control device 3 closes the rinse liquid valve 40 . Thereby, rinsing process S4 is complete|finished.

Next, the control apparatus 3 performs replacement process S5 (refer FIG. 8). Substitution step S5 is a step of replacing the rinse liquid present on the substrate W with an organic solvent (IPA in this example) having a lower surface tension than the rinse liquid (water). Specifically, the control device 3 opens the organic solvent valve 43 while maintaining the rotation of the substrate W at the liquid processing speed. Thereby, as shown in FIG. 10B, the organic solvent is discharged toward the upper surface center part of the board|substrate W from the 2nd discharge port 32a of the central axis nozzle 7 (2nd nozzle pipe 32). The organic solvent supplied to the upper surface central part of the board|substrate W receives the centrifugal force by rotation of the board|substrate W, and moves to the peripheral part of the board|substrate W. Thereby, the rinse liquid on the upper surface of the board|substrate W is replaced with the organic solvent.

The organic solvent is discharged laterally from the peripheral edge of the substrate W. The organic solvent discharged from the peripheral edge of the substrate W is taken in by the inner peripheral surface 21b of the blocking member 6 and then scattered from the lower end of the cylindrical portion 62 of the blocking plate 21 to the side. .

Substitution step S5 WHEREIN: In order to maintain the organic solvent at low surface tension, it is desired that water does not mix with the organic solvent, Therefore, it is necessary to maintain the atmosphere in space SP at low humidity. Since the space outside region SP1 can be maintained at a positive pressure in the replacement step S5, the entry of external air (gas containing oxygen) into the space SP can be suppressed or prevented, and thereby the atmosphere in the space SP can be kept at low humidity.

When a predetermined period elapses after the organic solvent valve 43 is opened, the control device 3 closes the organic solvent valve 43 . Thereby, replacement process S5 is complete|finished.

Next, the control device 3 executes the hydrophobizing agent step S6 (refer to FIG. 8 ). The hydrophobizing agent step S6 is a step of supplying a liquid hydrophobicizing agent to the upper surface of the substrate W and replacing the organic solvent present on the upper surface of the substrate W with the hydrophobicizing agent. Specifically, the control device 3 opens the hydrophobizing agent valve 46 while maintaining the rotation of the substrate W at the liquid processing speed. Thereby, as shown in FIG. 10D, the liquid hydrophobicizing agent is discharged toward the upper surface center part of the board|substrate W from the 3rd discharge port 33a of the central axis nozzle 7 (2nd nozzle pipe 32). The hydrophobic agent supplied to the upper surface central part of the board|substrate W receives the centrifugal force by rotation of the board|substrate W, and moves to the peripheral part of the board|substrate W. Thereby, the organic solvent on the upper surface of the board|substrate W is replaced with a hydrophobizing agent.

From the peripheral edge of the substrate W, the hydrophobizing agent is discharged laterally. The hydrophobicizing agent discharged from the peripheral edge of the substrate W is received by the inner peripheral surface 21b of the blocking member 6 and then scattered from the lower end of the cylindrical portion 62 of the blocking plate 21 to the side. .

In the hydrophobizing agent process S6, in order to implement|achieve favorable hydrophobization of the upper surface of the board|substrate W, it is necessary to maintain the atmosphere in space SP at low humidity. In the hydrophobizing agent step S6, since the space outside region SP1 can be maintained at a positive pressure, it is possible to suppress or prevent the entry of external air (gas containing water) into the space SP, and thereby, in the space SP The atmosphere can be kept at low humidity.

When a predetermined period elapses after the hydrophobizing agent valve 46 is opened, the control device 3 closes the hydrophobizing agent valve 46 . Thereby, the hydrophobizing agent process S6 is complete|finished.

Next, the control device 3 executes a replacement step S7 (refer to FIG. 8 ). Substitution step S7 is a step of substituting the hydrophobizing agent present on the substrate W with an organic solvent (IPA in this example). Specifically, the control device 3 opens the organic solvent valve 43 while maintaining the rotation of the substrate W at the liquid processing speed. Thereby, as shown in FIG. 10B, the organic solvent is discharged toward the upper surface center part of the board|substrate W from the 2nd discharge port 32a of the central axis nozzle 7 (2nd nozzle pipe 32). The organic solvent supplied to the upper surface central part of the board|substrate W receives the centrifugal force by rotation of the board|substrate W, and moves to the peripheral part of the board|substrate W. Thereby, the hydrophobizing agent existing on the upper surface of the board|substrate W is substituted with the organic solvent.

The organic solvent is discharged laterally from the peripheral edge of the substrate W. The organic solvent discharged from the peripheral edge of the substrate W is taken in by the inner peripheral surface 21b of the blocking member 6 and then scattered from the lower end of the cylindrical portion 62 of the blocking plate 21 to the side. .

Substitution step S7 WHEREIN: In order to maintain the organic solvent at low surface tension, it is desired that water does not mix with the organic solvent, Therefore, it is necessary to maintain the atmosphere in space SP at low humidity. Since the space outside region SP1 can be maintained at a positive pressure in the replacement step S7, it is possible to suppress or prevent the entry of external air (gas containing water) into the space SP, and thereby the atmosphere in the space SP can be kept at low humidity.

When a predetermined period elapses after the organic solvent valve 43 is opened, the control device 3 closes the organic solvent valve 43 . Thereby, replacement process S7 is complete|finished.

Next, spin drying step S8 (refer to FIG. 8 ) of drying the substrate W is performed. Specifically, the control device 3 controls the spin motor M in a state where the blocking plate 21 is disposed at the blocking position, and is higher than the rotation speed in each step of the chemical solution step S3 to the replacement step S7. The substrate W is accelerated up to a large drying rotation speed (eg, several thousand rpm), and the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W.

In addition, in the spin drying step S8 , the control device 3 opens the inert gas valve 49 . Thereby, as shown in FIG. 10C, an inert gas is discharged toward the upper surface center part of the board|substrate W from the 4th discharge port 34a of the central axis nozzle 7 (2nd nozzle pipe 32). The discharge flow rate of the inert gas at this time is, for example, 100 (liter/min). That is, in the space, in addition to the inert gas supplied so far through the gap between the outer peripheral wall 7a of the central axis nozzle 7 and the normal inner peripheral wall 24a of the through hole 24, The inert gas discharged from the fourth discharge port 34a is supplied.

In spin-drying process S8, in order to implement|achieve drying of the board|substrate W favorably, it is necessary to maintain the atmosphere in space SP at low humidity. In the spin drying step S8, since the space outside region SP1 can be maintained at a positive pressure, the entry of external air (a gas containing moisture) into the space SP can be suppressed or prevented, thereby making it possible to suppress or prevent the ingress of the outside air into the space SP. The atmosphere can be kept at low humidity.

When a predetermined period elapses from the acceleration of the substrate W, the control device 3 controls the spin motor M to stop the rotation of the substrate W by the spin chuck 5 (step in FIG. 8 ). S9). Then, the control device 3 controls the blocking member lifting/lowering unit 35 to raise the blocking plate 21 and arrange it in the retracted position.

Then, the board|substrate W is carried out from the inside of the chamber 4 (step S10 of FIG. 8). Specifically, the control device 3 moves the hand of the substrate transfer robot CR into the interior of the chamber 4 . Then, the control device 3 holds the substrate W on the spin chuck 5 in the hand of the substrate transfer robot CR. Thereafter, the control device 3 retracts the hand of the substrate transfer robot CR from the inside of the chamber 4 . Thereby, the substrate W after processing is carried out from the chamber 4, and a series of substrate processing examples are complete|finished. The carried out board|substrate W is passed from the board|substrate conveyance robot CR to indexer robot IR, and is accommodated in the board|substrate container C by indexer robot IR.

As described above, according to the first embodiment, with the rotation of the blocking member 6 and the spin base 18 around the rotation axis A1, the positive pressure generating member 63 (that is, the first engaging member) (55) and the second engaging member (51) also rotate around the rotation axis (A1). Thereby, the positive pressure area|region Pa is formed behind the rotation direction Dr of each positive pressure generating member 63 which is rotating. Thereby, the space outer region SP1 becomes a positive pressure. Moreover, since the distance D1 is shorter than the distance D2, the outflow of the atmosphere from space outer area|region SP1 to the space SP outside can be suppressed effectively. Thereby, the space outer region SP1 can be maintained at a positive pressure.

Further, the positive pressure generating member 63 constituted by the first engaging member 55 and the second engaging member 51 is connected to the upper surface 18a of the spin base 18 and the substrate opposing surface 21a. Therefore, when the positive pressure generating member 63 rotates, the area in contact with the atmosphere inside the space SP is large. Therefore, by rotating the positive pressure generating member 63 , the positive pressure can be further increased in the rear of the positive pressure generating member 63 in the rotational direction.

In addition, since the positive pressure generating member 63 serves as both the first engaging member 55 and the second engaging member 51 , the positive pressure generating member, the first engaging member 55 and the second engaging member 51 . ), compared with the case of forming separately, it is possible to reduce the number of parts.

<Second embodiment>

11 is a schematic cross-sectional view for explaining a configuration example of the processing unit 202 according to the second embodiment of the present invention. 12 is a cross-sectional view of the periphery of the outer periphery of the space SP between the spin base 18 and the blocking member 206 .

In the second embodiment, the same reference numerals as in the case of FIGS. 1 to 10 are attached to parts common to the first embodiment described above, and description thereof is omitted.

The processing unit 202 according to the second embodiment differs from the processing unit 2 according to the first embodiment in that, as a blocking member, instead of the driven blocking member 6 supported by the spin chuck, spin Above the chuck, a support-type blocking member 206 supported by a support unit (support arm 232 ) different from the spin chuck is provided. Therefore, the spin chuck 5 which does not have the 1st engaging member 55 on the spin scale and the spin base 18 is used. The spin chuck 5 is the same as the spin chuck 5 according to the first embodiment except that the first engaging member 55 is not provided on the spin base 18, and therefore the same reference numerals are used. are pasting

The blocking member 206 includes a blocking plate 221 , an upper spin shaft 231 rotatably formed integrally with the blocking plate 221 , and a center penetrating the central portion of the blocking plate 221 in the vertical direction. a shaft nozzle 207 . The blocking plate 221 is a disk shape larger than the diameter of the board|substrate W. As shown in FIG. The blocking plate 221 includes a disk portion 261 held in a horizontal posture, and a cylindrical portion 262 extending downward from the outer periphery of the disk portion 261 . The disk portion 261 is coaxial with the cylindrical portion 262 . The disk part 261 is arrange|positioned above the lower end of the cylindrical part 262.

The blocking plate 221 includes a cup-shaped inner surface concave downward. The inner surface of the blocking plate 221 has a substrate facing surface 221a opposite to the upper side of the upper surface of the substrate W, and with the blocking member 206 in the blocking position, the outer periphery of the substrate W and the spin and an inner peripheral surface 221b opposite to an outer peripheral surface (outer peripheral end) 18b of the base 18 . The lower surface of the disk part 261 corresponds to the board|substrate opposing surface 221a. The substrate opposing surface 221a is a flat surface parallel to the upper surface of the substrate W.

The inner peripheral surface of the cylindrical portion 262 corresponds to the inner peripheral surface 221b. The inner peripheral surface 221b includes an annular inner inclined portion extending obliquely downwardly outward from the substrate facing surface 221a. This inner inclined portion has an arc-shaped cross section in which the angle of inclination with respect to the rotation axis A1 continuously changes. The cross section of this inner slope part is open downward. The inner diameter of the inner peripheral surface 221b is increasing as it approaches the lower end of the inner peripheral surface 221b. The lower end of the inner peripheral surface 221b has an inner diameter larger than the outer diameter of the spin base 18 .

The central axis nozzle 207 extends in the vertical direction along a vertical axis passing through the centers of the blocking plate 221 and the substrate W, that is, the rotation axis A1. The central axis nozzle 207 moves up and down together with the blocking plate 221 . Since the central axis nozzle 207 is a structure equivalent to the central axis nozzle 7, description is abbreviate|omitted.

The upper spin shaft 231 is relatively rotatably supported by a support arm 232 extending horizontally above the blocking plate 221 . A blocking plate rotating unit 233 having a configuration including an electric motor or the like is coupled to the blocking plate 221 and the upper spin shaft 231 . The blocking plate rotation unit 233 rotates the blocking plate 221 and the upper spin shaft 231 about the rotation axis A1 with respect to the support arm 232 .

Moreover, the blocking member raising/lowering unit 234 of the structure containing an electric motor, a ball screw, etc. is couple|bonded with the support arm 232. As shown in FIG. The blocking member lifting unit 234 raises and lowers the blocking member 206 (the blocking plate 221 and the upper spin shaft 231 ) and the central shaft nozzle 207 together with the support arm 232 in the vertical direction.

The blocking member raising/lowering unit 234 moves the blocking plate 221 close to the upper surface of the substrate W held by the spin chuck 205 with the substrate facing surface 221a and the lower end of the cylindrical portion 262 . The height of is raised and lowered between the blocking position (shown by a broken line in FIG. 11 ) located below the height of the substrate W and the retracting position (shown by a solid line in FIG. 11 ) retracted to a greater extent than the blocking position. The blocking position is a position where the substrate opposing surface 221a forms a space SP (refer to FIG. 12 ) as a blocking space between the substrate opposing surface 221a and the upper surface of the substrate W. As shown in FIG.

The blocking member raising/lowering unit 234 is capable of holding the blocking plate 221 in the blocking position, the proximity position (shown by the dashed-dotted line in FIG. 11 ) and the retracted position. The space SP is not completely isolated from the space around it. However, the space SP is substantially blocked from the space around it. The proximity position is a position slightly above the blocking position. In the state where the blocking plate 221 is disposed at the proximal position, the space between the substrate facing surface 221a of the blocking plate 221 and the substrate W is not blocked from the outside space.

In this embodiment, a plurality of positive pressure generating members 263 are erected on the upper surface 18a of the spin base 18 . The plurality of positive pressure generating members 263 are disposed at appropriate intervals (e.g., at equal intervals) on the circumference of the upper surface 18a of the spin base 18, on the circumference having a larger diameter than the outer circumference shape of the substrate W. is placed. Each positive pressure generating member 263 has a cylindrical shape. The distance between the positive pressure generating member 263 and the rotation axis A1 is set to be larger than the distance between the pinching pin 19 and the rotation axis A1. That is, the positive pressure generating member 263 is formed at a position further away from the rotation axis A1 than the pinching pin 19 .

In FIG. 12, the state in which the blocking member 206 is arrange|positioned at the blocking position is shown. In the state where the blocking member 206 is disposed in the blocking position, a space SP, which is a blocking space, is formed between the spin base 18 and the blocking plate 221 . Specifically, the space SP refers to a space partitioned by the upper surface 18a of the spin base 18 , the substrate opposing surface 221a , and the inner peripheral surface 221b .

The "distance D11" is the outer peripheral surface (outer peripheral end) 18b of the spin base 18 and the inner peripheral surface of the cylindrical portion 262 of the blocking plate 221 when the blocking member 206 is disposed at the blocking position. (221b) means the distance in the radial direction Ds. The "distance D12" is the diameter between the outer edge of the positive pressure generating member 263 and the inner peripheral surface 221b of the cylindrical portion 262 of the blocking plate 221 when the blocking member 206 is disposed at the blocking position. It means the longest distance in the direction (Ds). The outer edge of the positive pressure generating member 263 refers to an outer end portion in the radial direction Ds of the outer peripheral surface of the positive pressure generating member 263 . In this embodiment, the outer edge of the positive pressure generating member 263 refers to an outer end portion of the positive pressure generating member 263 having a larger diameter in the radial direction Ds. That is, "the longest distance in the radial direction Ds between the outer edge of the positive pressure generating member 263 and the inner peripheral surface 221b of the cylindrical portion 262 of the blocking plate 221" is, in this embodiment, the positive pressure generating member It is the distance in the radial direction Ds with the inner peripheral surface 221b in the base (lower end) of 263.

The distance D11 is shorter (narrower) than the distance D12. When the blocking member 206 is disposed in the blocking position, the distance D11 is, for example, about 2.5 mm, and the distance D12 is, for example, about 6 mm.

"Distance D13" means the distance in the vertical direction from the upper surface 18a of the spin base 18 to the lower surface of the substrate W. The distance D13 is constant regardless of the position of the blocking member 206 . The distance D13 is, for example, about 10 mm. "Distance D14" means the distance from the upper surface 18a of the spin base 18 to the front-end|tip of the positive pressure generating member 263. That is, it is the height of the positive pressure generating member 263 . The distance D14 is longer (greater than the distance D13). The distance D14 is, for example, about 15 mm.

With the blocking plate 221 disposed in the blocking position, the blocking plate 221 and the spin base 18 are rotated around the rotation axis A1 in the same direction and at the same speed as each other. With the rotation of the blocking plate 221 and the spin base 18 around the rotation axis A1 , the positive pressure generating member 263 also rotates around the rotation axis A1 . Thereby, a positive pressure region (equivalent to the positive pressure region Pa in FIG. 9 ) is formed behind the rotation direction Dr of the rotating positive pressure generating member 263 . Such a phenomenon occurs because the positive pressure generating member 263 passes at high speed through the narrow space between the positive pressure generating member 263 and the inner circumferential surface 21b of the blocking plate 21 , so that the increased pressure is applied to the positive pressure generating member 263 . It is thought to generate|occur|produce by being open|released behind the rotation direction Dr. Thereby, the space outer area|region SP1 in the inside of the space SP becomes a positive pressure. On the other hand, the space inner region SP2 is promoted outward in the radial direction Ds by the action of the centrifugal force generated with the rotation of the blocking plate 221 and the spin base 18, thereby becoming a negative pressure.

Moreover, as mentioned above, since the distance D14 is longer than the distance D13, when the positive pressure generating member 263 rotates, the area in contact with the atmosphere inside the space SP is large. Therefore, a larger airflow can be generated by rotation of the positive pressure generating member 263, and space outer area|region SP1 can be made further positive pressure.

Further, as described above, since the distance D11 is shorter than the distance D12, it is possible to effectively suppress the outflow of the atmosphere from the space outside region SP1 to the space SP outside the OS. Thereby, the space outer region SP1 can be maintained at a positive pressure.

<Third embodiment>

13 is a cross-sectional view of the periphery of the outer periphery of the space SP between the spin base 18 and the blocking member 206 according to the third embodiment of the present invention.

In the third embodiment, the same reference numerals as in the case of FIGS. 11 and 12 are attached to parts common to the above-described second embodiment, and description thereof is omitted. In FIG. 13, the state in which the blocking member 206 is arrange|positioned at the blocking position is shown.

The processing unit 302 according to the third embodiment is different from the processing unit 202 according to the second embodiment in that the positive pressure generating member is formed on the blocking plate 221 instead of the spin base 18 . point.

In this embodiment, a plurality of positive pressure generating members 363 are erected on the upper surface 18a of the spin base 18 . The plurality of positive pressure generating members 363 are arranged at appropriate intervals (eg, at equal intervals) on the circumference of the outer circumference of the substrate-facing surface 221a of the blocking plate 221 , on the circumference having a larger diameter than that of the outer circumference of the substrate W. is placed with Each positive pressure generating member 363 has a cylindrical shape. The distance between the positive pressure generating member 363 and the rotation axis A1 is set to be larger than the distance between the pinching pin 19 and the rotation axis A1. That is, the positive pressure generating member 363 is formed at a position further away from the rotation axis A1 than the pinching pin 19 .

In the state in which the blocking member 206 shown in FIG. 13 is disposed in the blocking position, a space SP serving as a blocking space is formed between the spin base 18 and the blocking plate 221 . Specifically, the space SP refers to a space partitioned by the upper surface 18a of the spin base 18 , the substrate opposing surface 221a , and the inner peripheral surface 221b .

The "distance D22" is the diameter between the outer edge of the positive pressure generating member 363 and the inner peripheral surface 221b of the cylindrical portion 262 of the blocking plate 221 when the blocking member 206 is disposed at the blocking position. It means the longest distance in the direction (Ds). The outer edge of the positive pressure generating member 363 refers to an outer end portion in the radial direction Ds of the outer peripheral surface of the positive pressure generating member 363 . In this embodiment, the outer edge of the positive pressure generating member 363 refers to an outer end portion of the positive pressure generating member 363 having a larger diameter in the radial direction Ds. That is, "the longest distance in the radial direction Ds between the outer edge of the positive pressure generating member 363 and the inner peripheral surface 221b of the cylindrical portion 262 of the blocking plate 221" is, in this embodiment, the positive pressure generating member It is the distance in the radial direction Ds from the inner peripheral surface 221b in the front-end|tip (lower end) of 363.

The distance D11 is shorter (narrower) than the distance D22. When the blocking member 206 is disposed in the blocking position, the distance D22 is, for example, about 6 mm.

The "distance D23" means the distance in the vertical direction from the substrate-facing surface 221a of the blocking plate 221 to the upper surface of the substrate W when the blocking member 206 is disposed at the blocking position. The distance D23 is, for example, about 10 mm. The "distance D24" means a distance from the substrate-facing surface 221a of the blocking plate 221 to the tip of the positive pressure generating member 363 . That is, it is the height of the positive pressure generating member 363 . Distance D24 is longer (greater than distance D23). The distance D24 is, for example, about 15 mm.

With the blocking plate 221 disposed in the blocking position, the blocking plate 221 and the spin base 18 are rotated around the rotation axis A1 in the same direction and at the same speed as each other. With the rotation of the blocking plate 221 and the spin base 18 around the rotation axis A1 , the positive pressure generating member 363 also rotates around the rotation axis A1 . Thereby, a positive pressure area (equivalent to the positive pressure area Pa in FIG. 9 ) is formed behind the rotation direction Dr of the rotating positive pressure generating member 363 . Such a phenomenon occurs because the positive pressure generating member 363 passes through the space SP at high speed through the narrow space between the positive pressure generating member 363 and the inner peripheral surface 21b of the blocking plate 21, and the increased pressure is generated by the positive pressure generating member 363. It is thought to generate|occur|produce by being open|released behind the rotation direction Dr of the member 363. As shown in FIG. Thereby, the space outer area|region SP1 in the inside of the space SP becomes a positive pressure. On the other hand, the space inner region SP2 is promoted outward in the radial direction Ds by the action of the centrifugal force generated with the rotation of the blocking plate 221 and the spin base 18, thereby becoming a negative pressure.

Moreover, as described above, since the distance D24 is longer than the distance D23, when the positive pressure generating member 363 rotates, the area in contact with the atmosphere inside the space SP is large. Therefore, a larger airflow can be generated by rotation of the positive pressure generating member 363, and space outer area|region SP1 can be made further positive pressure.

Further, as described above, since the distance D11 is shorter than the distance D22, it is possible to effectively suppress the outflow of the atmosphere from the space outside region SP1 to the space SP outside the OS. Thereby, the space outer region SP1 can be maintained at a positive pressure.

As mentioned above, although three embodiment of this invention was described, this invention can also be implemented in another form.

For example, you may combine 2nd Embodiment and 3rd Embodiment. That is, the positive pressure generating member may be formed on both the spin base 18 and the blocking plate 221 .

In addition, although a configuration in which a plurality of positive pressure generating members 63, 263, 363 are respectively formed on the blocking members 6, 206 or the spin base 18 has been described as an example, the blocking members 6, 206 or the spin base 18 18), a configuration in which only one positive pressure generating member 63 , 263 , 363 is provided may be employed.

In addition, although the inner peripheral surfaces 21b and 221b of the blocking members 6 and 206 have been described as having an arc-shaped cross section, the inner peripheral surfaces 21b and 221b of the blocking members 6 and 206 are curved (for example, at right angles). It may have a cross-section of flexure).

Further, in each of the above-described embodiments, a configuration in which both of the blocking members 6 and 206 and the spin base 18 rotate simultaneously was described as an example. However, only at least one of the blocking member 206 and the spin base 18 is used. This rotating structure may be sufficient.

Moreover, although the pinching pin 19 was mentioned as an example and demonstrated as a pin, the pin may contain not only a pinching pin but a fixing pin.

Moreover, in the above-mentioned embodiment, although the case where the substrate processing apparatus is an apparatus which processes the board|substrate W which consists of a semiconductor wafer was demonstrated, the substrate processing apparatus is a board|substrate for liquid crystal display devices, and an organic EL (electroluminescence) display device. An apparatus for processing substrates such as a substrate for a flat panel display (FPD) such as a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, and a substrate for a solar cell may be used.

Although embodiments of the present invention have been described in detail, these are only specific examples used to clarify the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples, and the scope of the present invention is limited only by the appended claims.

This application corresponds to Japanese Patent Application No. 2017-180693 filed with the Japan Patent Office on September 20, 2017, and the entire disclosure of this application is incorporated herein by reference.

1: Substrate processing device
2: processing unit
5: Spin chuck (substrate holding unit)
6: blocking member
18: spin base
18a: upper surface
18b: Outer periphery (outer periphery)
19: pinch pin (pin)
21: blocking plate
21a: substrate facing surface
21b : If I give it to you
51: second engaging member
55: first engaging member
63: positive pressure generating member (connected positive pressure generating member)
202 processing unit
206: blocking member
221: blocking plate
221a: substrate facing surface
221b: inner side
263: positive pressure generating member
302: processing unit
363: positive pressure generating member
A1: axis of rotation
D1: Distance (Distance in the radial direction between the outer periphery of the spin base and the inner periphery)
D2: Distance (the longest radial distance between the outer edge and inner peripheral surface of the positive pressure generating member)
D11: Distance (Distance in the radial direction between the outer periphery of the spin base and the inner periphery)
D12: Distance (the longest radial distance between the outer edge and inner peripheral surface of the positive pressure generating member)
D13: Distance (distance of the lower surface of the substrate to the upper surface of the spin base)
D14: Distance (distance of the tip of the positive pressure generating member with respect to the upper surface of the spin base)
D22: Distance (the longest radial distance between the outer edge and inner circumferential surface of the positive pressure generating member)
D23: Distance (distance of the upper surface of the substrate to the substrate-facing surface of the blocking member)
D24: Distance (distance of the tip of the positive pressure generating member with respect to the substrate-facing surface of the blocking member)
M: Spin motor (rotation unit)
W: substrate

Claims (5)

a substrate holding unit having a spin base having an upper surface and a plurality of fins erected on the upper surface and holding a substrate by the plurality of fins;
a blocking member having a substrate facing surface facing the upper surface of the substrate held by the substrate holding unit, and inner peripheral surfaces facing both of the outer peripheral end of the substrate held by the substrate holding unit and the outer peripheral end of the spin base; ,
a rotation unit for rotating the spin base and the blocking member about a predetermined rotation axis;
In a space defined by the upper surface of the spin base, the substrate facing surface, and the inner circumferential surface, the blocking member and at least one of the spin base are rotatable with rotation of the spin base and are rotatable relative to the rotation axis relative to the pin. A positive pressure generating member formed at a remote location, comprising: a positive pressure generating member in which a positive pressure region is located behind the positive pressure generating member in a rotational direction of at least one of the blocking member and the spin base;
The positive pressure generating member is formed such that a radial distance between an outer peripheral end of the spin base and the inner peripheral surface is smaller than a radial distance between an outer edge of the positive pressure generating member and the inner peripheral surface. delete The method of claim 1,
and a connection positive pressure generating member formed such that the positive pressure generating member is connected to the upper surface of the spin base and the substrate facing surface. 4. The method of claim 3,
the positive connection pressure generating member includes first and second engaging members respectively formed on the upper surface and the substrate facing surface of the spin base and engaged with each other;
and the blocking member is supported by the spin base via first and second engaging members engaged with each other. a substrate holding unit having a spin base having an upper surface and a plurality of fins erected on the upper surface and holding a substrate by the plurality of fins;
a blocking member having a substrate facing surface facing the upper surface of the substrate held by the substrate holding unit, and inner peripheral surfaces facing both of the outer peripheral end of the substrate held by the substrate holding unit and the outer peripheral end of the spin base; ,
a rotation unit for rotating the spin base and the blocking member about a predetermined rotation axis;
In a space defined by the upper surface of the spin base, the substrate facing surface, and the inner circumferential surface, the blocking member and at least one of the spin base are rotatable with rotation of the spin base and are rotatable relative to the rotation axis relative to the pin. A positive pressure generating member formed at a remote location, comprising: a positive pressure generating member in which a positive pressure region is located behind the positive pressure generating member in a rotational direction of at least one of the blocking member and the spin base;
the positive pressure generating member is formed on one of the upper surface of the spin base and the substrate-facing surface, and with respect to the one of the upper surface and the substrate-facing surface of the spin base, a tip of the positive pressure generating member is disposed on the substrate The substrate processing apparatus which is formed so that it may become larger than the distance with the board|substrate hold|maintained by the holding unit.

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