KR102326301B1 - Organic light emitting diode display device and manufacturing method thereof - Google Patents

Abstract

An object of the present invention is to provide a method for improving hydrophilicization of the hydrophobic bank layer by a plasma treatment process for a first electrode of an organic light emitting diode.
To this end, in the present invention, the ion shielding electrode is formed on a part of the surface of the hydrophobic bank layer formed along the boundary of the pixel region, and a positive charge is applied to the ion shielding electrode during the plasma treatment process for the first electrode. Accordingly, the ion shielding electrode generates a repulsive force with respect to the positive ion plasma generated during the plasma treatment process, thereby preventing the cation plasma from colliding with the surface of the bank layer, thereby preventing the hydrophobic bank layer from becoming hydrophilic. will occur
Furthermore, a counter electrode opposite to the ion shielding electrode is formed on the lower portion with at least one insulating film including a bank layer interposed therebetween, and a voltage is applied between the ion shielding electrode and the counter electrode when the organic light emitting diode is driven in the organic light emitting diode. An electric field is generated along the forward direction. Accordingly, the energy barrier between the stacked layers of the organic light emitting diode is lowered and a taper is formed in the energy level. For this reason, the effect of improving the injection and transport efficiency of the carrier occurs.

Description

Organic light emitting diode display device and manufacturing method thereof

The present invention relates to an organic light emitting diode display device, and more particularly, to an organic light emitting diode display device capable of improving hydrophilicization of a hydrophobic bank layer by a plasma treatment process for a first electrode of the organic light emitting diode display device it's about how

Recently, a flat panel display having excellent characteristics such as reduction in thickness, weight reduction, and low power consumption has been widely developed and applied to various fields.

Among flat panel display devices, an organic light emitting diode display device (OLED display device), also called an organic electroluminescent display device or an organic electroluminescent display device, includes a cathode and a hole as an electron injection electrode. It is a device that emits light by injecting electric charge into the light emitting layer formed between the anode, which is the injection electrode, and extinguishing after pairing of electrons and holes.

Such an organic light emitting diode display can be formed on a flexible substrate such as plastic, and because it is a self-luminous type, the contrast ratio is large, and the response time is several microseconds (㎲), so moving images are realized. This is easy, there is no limitation of the viewing angle, is stable even at low temperature, and can be driven with a relatively low voltage of 5V to 15V of DC, so that it is easy to manufacture and design a driving circuit.

The organic light emitting diode includes a first electrode as a lower electrode, a second electrode as an upper electrode, and an organic light emitting layer having a plurality of organic layers between the first and second electrodes. Here, in forming the organic film constituting the organic light emitting layer in units of pixel areas, a deposition process was used in the prior art. Accordingly, there is a problem in that the mask process is increased and the process cost is increased.

In order to improve this, a solution process has been recently proposed. In this solution process, an organic film in a solution state is applied to a substrate using a printing method or a coating method and dried to form an organic film in units of pixel areas.

As such, since the solution process does not require a separate mask process, it is possible to improve the mask process increase and process cost increase due to the use of the deposition process.

1 is a cross-sectional view schematically illustrating a state in which a plasma pretreatment process is performed with respect to a first electrode of a conventional organic light emitting diode display device. For convenience of explanation, only some components are shown.

Referring to FIG. 1 , a first electrode 62 is formed on the upper portion of the passivation layer 61 on the substrate 10 in units of pixel areas P, and the first electrode 62 covers the edge of the adjacent pixel area P. The bank layer 70 is formed along the boundary to divide the pixel area P.

Although not specifically illustrated, after the bank layer 70 is formed, at least some organic layers are coated on the substrate 10 through a solution process. At this time, in order to form the organic layer by dividing the organic layer in units of the pixel regions P, the surface of the bank layer 70 is configured to have hydrophobicity.

Meanwhile, before forming the organic layer through the solution process, a pretreatment process using plasma is performed for surface modification and cleaning of foreign substances on the first electrode 62 . That is, a plasma treatment process is performed to lower the work function of the first electrode 62 and remove foreign substances present on the surface.

However, in the plasma treatment process for the first electrode 62, positive ions in a plasma state, that is, positive ion plasma, collide not only with the surface of the first electrode 62 but also on the surface of the bank layer 70, so that the hydrophobic bank layer ( 70), the problem of hydrophilization occurs. Accordingly, in the subsequent solution process, the organic layer cannot be formed separately for each pixel area P, thereby causing device defects.

An object of the present invention is to provide a method for improving the hydrophilicity of the hydrophobic bank layer by the plasma treatment process for the first electrode of the organic light emitting diode.

In order to achieve the above object, the present invention provides an organic light emitting diode positioned in a pixel region on a substrate, the organic light emitting diode including a first electrode on a protective film, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer, and a hydrophobic bank layer positioned at a boundary of the pixel region, and an ion shielding electrode positioned on a surface of the bank layer.

Here, the organic light emitting layer may include a light emitting material layer located in the pixel region, and a second organic layer covering the light emitting material layer and the ion shielding electrode and located under the second electrode.

The organic light emitting layer may include a first organic layer positioned below the light emitting material layer.

and a counter electrode facing the ion shielding electrode with the bank layer interposed therebetween and generating an electric field in a forward direction of the light emitting diode.

The counter electrode may be formed of the same material as the first electrode and positioned on the same layer.

The counter electrode may be positioned between the insulating layer on the driving thin film transistor connected to the organic light emitting diode and the protective layer on the insulating layer.

A hydrophilic second bank layer positioned below the bank layer may be included.

A portion of the passivation layer under the bank layer may have a shape recessed toward the substrate.

The portion of the passivation layer under the bank layer may have a concave shape by removing all or part of it.

In another aspect, the present invention provides the steps of: forming a first electrode in a pixel region on a protective film on a substrate; forming a hydrophobic bank layer at a boundary of the pixel region; forming a ion shielding electrode, performing plasma treatment on the first electrode in a state in which a positive charge is applied to the ion shielding electrode, and after performing the plasma treatment, forming an organic light emitting layer and a second electrode It provides a method of manufacturing an organic light emitting diode display comprising a.

Here, the forming of the organic light emitting layer includes: forming a first organic film and a light emitting material layer thereon using a solution process on the first electrode; and depositing a second organic film on the light emitting material layer. It may include forming on the entire surface of the substrate using

The method may include forming a counter electrode facing the ion shielding electrode with the bank layer interposed therebetween.

The counter electrode may be formed in the same process as the first electrode.

The counter electrode may be formed between an insulating layer on the driving thin film transistor connected to the organic light emitting diode and the passivation layer on the insulating layer.

In the present invention, the ion shielding electrode is formed on a part of the surface of the hydrophobic bank layer formed along the boundary of the pixel region, and a positive charge is applied to the ion shielding electrode during the plasma treatment process for the first electrode. Accordingly, the ion shielding electrode generates a repulsive force with respect to the cation plasma generated during the plasma treatment process, thereby preventing the cation plasma from colliding with the surface of the bank layer, thereby preventing the hydrophobic bank layer from becoming hydrophilic. will occur

Furthermore, a counter electrode opposite to the ion shielding electrode is formed on the lower portion with at least one insulating film including a bank layer interposed therebetween, and a voltage is applied between the ion shielding electrode and the counter electrode when the organic light emitting diode is driven in the organic light emitting diode. An electric field is generated along the forward direction. Accordingly, the energy barrier between the stacked layers of the organic light emitting diode is lowered and a taper is formed in the energy level. For this reason, the effect of improving the injection and transport efficiency of the carrier occurs.

1 is a diagram schematically illustrating a pixel area of an organic light emitting diode display using a conventional solution process.
2 is a circuit diagram of one pixel area of the organic light emitting diode display according to the first embodiment of the present invention;
3 is a plan view schematically illustrating a part of an organic light emitting diode display according to a first embodiment of the present invention.
FIG. 4 is a cross-sectional view taken along line III-III of FIG. 3 .
5 is a diagram schematically illustrating an electric field generated by the ion shielding electrode and the counter electrode according to the first embodiment of the present invention.
6 is a diagram schematically illustrating a plasma processing apparatus for plasma processing a first electrode of an organic light emitting diode display according to a first embodiment of the present invention.
FIG. 7 is a diagram schematically illustrating an organic light emitting diode display device during a plasma processing process using the plasma processing apparatus of FIG. 6 .
8 is a cross-sectional view schematically illustrating an example in which a double-layered bank layer is provided in the organic light emitting diode display device according to the first embodiment of the present invention.
9 and 10 are cross-sectional views schematically illustrating examples in which a portion of a second passivation layer under a bank layer is formed in a concave shape in the organic light emitting diode display according to the first embodiment of the present invention.
11 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to a second embodiment of the present invention.
12 is a cross-sectional view schematically illustrating an example in which a bank layer having a double layer structure is provided in an organic light emitting diode display device according to a second embodiment of the present invention.
13 and 14 are cross-sectional views schematically illustrating examples in which a portion of a second passivation layer under a bank layer is formed in a concave shape in an organic light emitting diode display according to a second embodiment of the present invention;

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Meanwhile, in the following embodiments, the same and similar reference numerals are assigned to the same and similar components, and detailed descriptions thereof may be omitted.

In the organic light emitting diode display device according to the embodiment of the present invention, the ion shielding electrode is formed on the surface of the hydrophobic bank layer formed along the boundary of the pixel region, and positive charges are applied to the ion shielding electrode during the plasma treatment process for the first electrode. will be authorized Accordingly, the ion shielding electrode generates a repulsive force with respect to the cation plasma generated during the plasma treatment process, thereby preventing the cation plasma from colliding with the surface of the bank layer, thereby preventing the hydrophobic bank layer from becoming hydrophilic. will occur

Furthermore, in the embodiment of the present invention, a counter electrode opposite to the ion shielding electrode is formed under the bank layer, and a voltage is applied between the ion shielding electrode and the counter electrode when the organic light emitting diode is driven to generate an electric field in the organic light emitting diode. do. Accordingly, the energy barrier between the stacked layers of the organic light emitting diode is lowered and a taper is formed in the energy level. For this reason, the effect of improving the injection and transport efficiency of the carrier occurs.

Hereinafter, various embodiments of an organic light emitting diode display having an ion shielding electrode will be described in more detail.

<First embodiment>

2 is a circuit diagram of one pixel area of the organic light emitting diode display according to the first embodiment of the present invention.

As shown in FIG. 2 , the organic light emitting diode display device according to the first embodiment of the present invention includes a gate line GL and a data line DL that cross each other and define a pixel region P, respectively. A switching thin film transistor Ts, a driving thin film transistor Td, a storage capacitor Cst, and an organic light emitting diode De are formed in the pixel region P of .

The gate electrode of the switching thin film transistor Ts is connected to the gate line GL, and the source electrode is connected to the data line DL. A gate electrode of the driving thin film transistor Td may be connected to a drain electrode of the switching thin film transistor Ts, and a source electrode may be connected to the high potential power voltage VDD. As a first electrode of the organic light emitting diode De, for example, an anode is connected to the drain electrode of the driving thin film transistor Td, and as a second electrode, for example, a cathode has a low potential power voltage VSS ) is connected to The storage capacitor Cst is connected to the gate electrode and the drain electrode of the driving thin film transistor Td.

Looking at the image display operation of the organic light emitting diode display, the switching thin film transistor Ts is turned on according to the gate signal applied through the gate wiring GL, and in synchronization with this, the data line DL is turned on. ) is applied to the gate electrode of the driving thin film transistor Td through the switching thin film transistor Ts.

The driving thin film transistor Td is turned on according to the data signal to control the current flowing through the organic light emitting diode De to emit light, thereby displaying an image.

Here, the amount of current flowing through the organic light emitting diode De is proportional to the size of the data signal, and the intensity of light emitted by the organic light emitting diode De is proportional to the amount of current flowing through the organic light emitting diode De. The region P displays different gradations according to the size of the data signal, and as a result, the organic light emitting diode display displays an image.

The storage capacitor Cst serves to maintain the data signal applied to the gate electrode of the driving thin film transistor Td for one frame.

3 is a plan view schematically illustrating a part of an organic light emitting diode display according to a first embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along line III-III of FIG. 3 . In FIG. 3 , the arrangement of the bank layer 170 , the ion shielding electrode EL1 , and the counter electrode EL2 is schematically illustrated for convenience of explanation.

3 and 4 , in the organic light emitting diode display 100 according to the first embodiment of the present invention, a switching thin film transistor formed in each pixel region P on a substrate 110 (see Ts in FIG. 2 ). and a driving thin film transistor Td, and an organic light emitting diode De positioned on the thin film transistors and connected to the driving thin film transistor Td.

In particular, the organic light emitting diode display 100 according to the present embodiment is formed on a part of the surface of the bank layer 170 and a positive charge is applied during a solution process for the organic film to shield the positive ion plasma by shielding the ion shielding electrode (EL1). this is provided

Furthermore, the ion shielding electrode EL1 and the counter electrode EL2 for inducing an electric field may be provided under the bank layer 170 .

If the cross-sectional structure of the organic light emitting diode display 100 having such a configuration will be described in more detail, a patterned semiconductor layer 122 is formed on the substrate 110 .

Here, the substrate 110 may be a glass substrate or a plastic substrate. The semiconductor layer 122 may be made of an oxide semiconductor material. In this case, a light blocking pattern (not shown) and a buffer layer (not shown) may be formed under the semiconductor layer 122 , and the light blocking pattern is formed of the semiconductor layer 122 . By preventing light from being incident, the semiconductor layer 122 is prevented from being deteriorated by the light. As another example, the semiconductor layer 122 may be made of polycrystalline silicon, and in this case, both edges of the semiconductor layer 122 may be doped with impurities.

A gate insulating layer 130 may be formed on the entire surface of the substrate 110 as an insulating layer made of an insulating material on the semiconductor layer 122 . The gate insulating layer 130 may be formed of an inorganic insulating material such as _{silicon oxide (SiO 2 ).} Meanwhile, when the semiconductor layer 122 is made of polycrystalline silicon, the gate insulating layer 130 _{may be formed of silicon oxide (SiO 2} ) or silicon nitride (SiNx).

A gate electrode 132 made of a conductive material such as metal is formed on the gate insulating layer 130 to correspond to the center of the semiconductor layer 122 . In addition, a gate wiring (refer to GL of FIG. 2 ) and a first capacitor electrode (not shown) may be formed on the gate insulating layer 130 . The gate wiring extends along the first direction, and the first capacitor electrode is connected to the gate electrode 132 .

Meanwhile, in this embodiment, the case in which the gate insulating layer 130 is formed on the entire surface of the substrate 110 is taken as an example, but the gate insulating layer 130 may be patterned in the same shape as the gate electrode 132 .

An interlayer insulating layer 140 as an insulating layer made of an insulating material may be formed on the entire surface of the substrate 110 on the gate electrode 132 . The interlayer insulating layer 140 _{may be formed of an inorganic insulating material such as silicon oxide (SiO 2} ) or silicon nitride (SiNx), or an organic insulating material such as benzocyclobutene or photo acryl. .

The interlayer insulating layer 140 may include first and second contact holes 140a and 140b exposing both sides of the semiconductor layer 122 . The first and second contact holes 140a and 140b are positioned on both sides of the gate electrode 132 to be spaced apart from the gate electrode 132 . Furthermore, the first and second contact holes 140a and 140b may also be formed in the gate insulating layer 130 . In contrast, when the gate insulating layer 130 is patterned to have the same shape as the gate electrode 132 , the first and second contact holes 140a and 140b are formed in the interlayer insulating layer 140 .

Source and drain electrodes 152 and 154 are formed on the interlayer insulating layer 140 using a conductive material such as a metal. In addition, a data line (see DL of FIG. 2 ), a power line (not shown), and a second capacitor electrode (not shown) extending in the second direction may be formed on the interlayer insulating layer 140 .

The source and drain electrodes 152 and 154 are spaced apart from the center of the gate electrode 132 and contact both sides of the semiconductor layer 122 through the first and second contact holes 140a and 140b, respectively. Although not shown, the data line extends along the second direction and intersects the gate line to define the pixel region P, and the power line for transmitting the high potential power voltage (see VDD in FIG. 2 ) is spaced apart from the data line. Located. The second capacitor electrode is connected to the drain electrode 154 and overlaps the first capacitor electrode, and the interlayer insulating film 140 between the two electrodes is used as a dielectric to form a storage capacitor.

Meanwhile, the semiconductor layer 122 , the gate electrode 132 , and the source and drain electrodes 152 and 154 form the driving thin film transistor Td. Here, the driving thin film transistor Td is a coplanar in which the gate electrode 132 and the source and drain electrodes 152 and 154 are positioned on one side of the semiconductor layer 122 , that is, on the semiconductor layer 122 . It may be configured to have a structure.

As another example, the driving thin film transistor Td may have an inverted staggered structure in which a gate electrode is positioned under a semiconductor layer and a source electrode and a drain electrode are positioned above the semiconductor layer. In this case, the semiconductor layer may be made of amorphous silicon.

Meanwhile, although not shown, a switching thin film transistor (see Ts in FIG. 2 ) having the same structure as the driving thin film transistor Td is formed on the substrate 110 . The gate electrode 132 of the driving thin film transistor Td is electrically connected to the drain electrode of the switching thin film transistor, and the source electrode 152 of the driving thin film transistor Td is connected to the power supply line. In addition, the gate electrode and the source electrode of the switching thin film transistor are respectively connected to the gate line and the data line.

A first passivation layer 160 may be formed on the entire surface of the substrate 110 as an insulating layer made of an insulating material on the source and drain electrodes 152 and 154 . The first passivation layer 160 may be formed of an inorganic insulating material such as silicon _{oxide (SiO 2 ) or silicon nitride (SiNx).}

On the first passivation layer 160 , as an insulating layer made of an insulating material, a second passivation layer 161 may be formed on the entire surface of the substrate 110 . The second passivation layer 161 may be formed of an organic insulating material such as benzocyclobutene or photoacrylic. The second passivation layer 161 functions as a planarization layer so that its upper surface is substantially flat.

As such, in the present embodiment, the protective layers 160 and 161 having a double layer structure may be formed on the driving thin film transistor Td. The first and second passivation layers 160 and 161 have a drain contact hole 160a exposing the drain electrode 154 . As another example, a protective layer having a single layer structure may be formed on the driving thin film transistor Td.

A patterned first electrode 162 for each pixel region P may be formed on the second passivation layer 161 . The first electrode 162 contacts the drain electrode 154 through the drain contact hole 160a. The first electrode 162 may be formed of a conductive material having a relatively high work function, for example, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

A bank layer 170 is formed on the first electrode 162 as an insulating film made of an insulating material. The bank layer 170 is disposed to surround each pixel area P along the boundary of the neighboring pixel area P. As shown in FIG. The bank layer 170 has a through hole 170a exposing the first electrode 162 of each pixel region P, and covers the edge of the first electrode 162 .

Such a bank layer 170 is formed to have a hydrophobic property. In this regard, for example, the bank layer 170 contains an additive such as a polymer having hydrophobicity, that is, a hydrophobic additive, and the hydrophobic additive is used in a curing process (eg, a soft baking process) for forming the bank layer 170 . is moved to the surface, and the surface of the bank layer 170 becomes hydrophobic.

As such, since the bank layer 170 has a hydrophobic property, the corresponding organic layer can be formed by dividing the organic layer into pixel areas P units when the organic layer is formed using a subsequent solution process.

The organic light emitting layer 180 is formed on the first electrode 162 exposed through the transmission hole 170a of the bank layer 170 . The organic light emitting layer 180 is formed in a multi-layered structure including a plurality of organic layers including the light emitting material layer 183 .

In this regard, for example, when the first electrode 162 is an anode and the second electrode 192 is a cathode, a hole injection layer and a hole transport layer are formed between the first electrode 162 and the light emitting material layer 183 . They may be sequentially disposed, and an electron transport layer and an electron injection layer may be sequentially disposed between the light emitting material layer 183 and the second electrode 192 . In this embodiment, for convenience of explanation, the hole injection layer and the hole transport layer as the organic film under the light emitting material layer 183 are illustrated as a single-layer organic film 181 , and the organic film on the light emitting material layer 183 is shown. As a film, the electron injection layer and the electron transport layer are illustrated as a single-layer organic film 185 .

Meanwhile, in some cases, at least one of the hole injection layer and the hole transport layer may be omitted, and at least one of the electron injection layer and the electron transport layer may be omitted.

As such, the plurality of organic layers constituting the organic light emitting layer 180 may be disposed in various shapes.

At this time, in forming the organic light emitting layer 180 according to the present embodiment, some organic layers disposed on a relatively lower portion are formed in units of the pixel area P by a solution process, and the remaining organic layers disposed on a relatively upper part are formed by a deposition process. It is preferable to be substantially formed on the entire surface of the substrate. Here, as the solution process, a printing method or a coating method may be used, and an inkjet printing method or a nozzle printing method may be used as the printing method. Meanwhile, the deposition process may be formed by a PECVD method or the like.

In this regard, for example, a solution process is applied to the first organic film 181 , which is the organic film 181 having a single-layer or multi-layer structure located under the light-emitting material layer 183 , and the hydrophobic bank layer 170 is applied. ) by dividing the first organic layer 181 in units of the pixel area P may be formed.

In addition, the light emitting material layer 183 may also be formed in units of the pixel area P by a solution process. On the other hand, in the case of a color display device having red, green, and blue pixel areas, in forming the light emitting material layer 183 , for example, the red and green light emitting material layers respectively formed in the red and green pixel areas are mixed with a solution. It is formed by a process, and in a subsequent process thereto, a blue light emitting material layer may be formed on the entire surface of the substrate by a deposition process. Of course, the blue light emitting material layer may also be formed in the blue pixel region by applying a solution process.

On the other hand, the deposition process is applied to the second organic layer 185 , which is the organic layer 185 having a single or multilayer structure positioned on the light emitting material layer 183 , and is formed to substantially cover the entire display area on the substrate. can be That is, the second organic layer 185 may be formed to cover not only the pixel region P but also the bank layer 170 at the boundary thereof.

As described above, when a solution process is applied to some organic layers constituting the organic light emitting layer 180 to be formed, the mask process for the organic layers is reduced, thereby improving process efficiency.

A second electrode 192 made of a conductive material having a relatively low work function may be formed on the entire surface of the substrate 110 on the organic light emitting layer 180 configured as described above. That is, the second electrode 192 may be formed along the surface of the second organic layer 185 of the organic light emitting layer 180 .

Here, the second electrode 192 may be formed of aluminum, magnesium, silver, or an alloy thereof.

The first electrode 162 , the organic light emitting layer 180 , and the second electrode 192 form an organic light emitting diode De. Here, one of the first and second electrodes 162 and 192 serves as an anode, and the other serves as a cathode.

On the other hand, the organic light emitting diode display 100 according to the present embodiment may be configured as a top emission type in which light emitted from the organic light emitting layer 180 is outputted to the outside through the second electrode 192 . have. In this case, the first electrode 162 may have a multilayer structure further including a reflective layer (not shown) made of an opaque conductive material. For example, the reflective layer may be formed of an aluminum-palladium-copper (APC) alloy, and the first electrode 162 may have a triple layer structure of ITO/APC/ITO. In addition, the second electrode 192 has a relatively thin thickness so that light is transmitted, and the light transmittance of the second electrode 192 may be about 45-50%.

As another example, the organic light emitting diode display 100 may be configured as a bottom emission type in which light emitted from the organic light emitting layer 180 is outputted to the outside through the first electrode 162 .

In addition, the organic light emitting diode display 100 according to the present embodiment may include a color filter corresponding to each pixel region P. In this case, the color filter may be disposed on the side in the light emitting direction, for example, on the lower side of the organic light emitting diode De in the case of the bottom light emitting type and above the organic light emitting diode De in the case of the upper light emitting type. have. As such, when a color filter is used, an advantage of improving color gamut may occur.

Meanwhile, in this embodiment, the ion shielding electrode EL1 is formed on the surface of the hydrophobic bank layer 170 . The ion shielding electrode EL1 serves to prevent the hydrophobic surface of the bank layer 170 from becoming hydrophilic, and is substantially formed in the same shape as the bank layer 170 in plan view. That is, the ion shielding electrode EL1 is formed to surround the periphery of each pixel region P along the boundary of the neighboring pixel region P. As shown in FIG.

On the other hand, on the ion shielding electrode EL1, a second organic layer 185 substantially functioning as an insulating layer is positioned, so that when the organic light emitting diode De is driven, it is electrically shorted with the second electrode 192 positioned thereon. can be prevented. As such, the second organic layer 185 may perform a function of not only transporting carriers flowing in from the second electrode 192 , but also preventing an electrical short between the ion shielding electrode EL1 and the second electrode 192 . there will be

In addition, the ion shielding electrode EL1 is formed on the upper surface as a part of the surface of the bank layer 170 so as to be spaced apart from the first electrode 162 , and is substantially electrically disconnected from the first electrode 162 . The ion shielding electrode EL1 may be formed of, for example, at least one of metal materials such as silver (Ag), ITO, and copper (Cu).

After the ion shielding electrode EL1 is formed on the bank layer 170, plasma treatment is performed on the first electrode 162. During this process, a positive charge is applied to the ion shielding electrode EL1. . That is, by applying a positive voltage to the ion shielding electrode EL1 , positive charges of a positive polarity are introduced into the ion shielding electrode EL1 , and the ion shielding electrode EL1 has a positive polarity. Accordingly, there is an effect of preventing the cation plasma generated for the plasma treatment from colliding with the surface of the bank layer 170 due to the influence of the positive charges charged in the ion shielding electrode EL1 . In addition, the ion shielding electrode EL1 acts as a guide ring so that the positive ion plasma is concentrated on the exposed surface of the first electrode 162 between the bank layers 170 , thereby treating the first electrode 162 with plasma. The effect of improving the efficiency also occurs.

In addition, according to the present embodiment, the counter electrode EL2 may be formed on the second passivation layer 161 as the lower part of the bank layer 170 , and the counter electrode EL2 is disposed between the bank layer 170 . and may be disposed to face the ion shield electrode EL1.

The counter electrode EL2 can be formed of the same material on the same layer through the same process as that of the first electrode 162 . Accordingly, there is an advantage that a separate mask process for forming the counter electrode EL2 can be omitted.

When the organic light emitting diode De is driven, the counter electrode EL2 operates together with the ion shielding electrode EL1 to generate an electric field inside the organic light emitting diode De, which will be described with reference to 5 further. .

5 is a diagram schematically illustrating an electric field generated by the ion shielding electrode and the counter electrode according to the first embodiment of the present invention. For convenience of explanation, related main components are mainly illustrated.

Referring to FIG. 5, the electric field E generated through the counter electrode EL2 and the ion shielding electrode EL1 passes through the organic light emitting diode De, and the electric field (E) acting on the organic light emitting diode De Let the direction of E) be the forward direction of the organic light emitting diode De.

In this regard, when the electric field E is generated along the forward direction in which the light emitting current flows with respect to the organic light emitting diode De, the energy barrier between the stacked layers is lowered and the energy level of the stacked layers is taper. The injection and transport efficiency is improved.

In this embodiment, reflecting this point, the electric field E generated by the ion shielding electrode EL1 and the counter electrode EL2 is configured to follow the forward direction of the organic light emitting diode De. Accordingly, the energy barrier is lowered and the energy level is taper, so that the injection and transport efficiency of carriers can be improved.

For this reason, by applying a high voltage to the first and second electrodes 162 and 192 in order to improve carrier injection and transport efficiency, the organic layer is deteriorated and the lifespan of the organic light emitting diode De is reduced. will have

Accordingly, in the present embodiment, a driving voltage that induces the electric field E in the forward direction of the organic light emitting diode De is applied to the ion shielding electrode EL1 and the counter electrode EL2.

In this regard, for example, when the first electrode 162 of the organic light emitting diode De is the anode and the second electrode 192 is the cathode, the forward direction of the emission current is from the first electrode 162 to the second electrode. (192) direction, a relatively high first driving voltage V1 is applied to the lower counter electrode EL2, and a relatively low second driving voltage V2 is applied to the upper ion shielding electrode EL1. ) is applied (ie, V1>V2). Accordingly, the electric field E is induced along the forward direction of the organic light emitting diode De.

As another example, when the first electrode 162 of the organic light emitting diode De is the cathode and the second electrode 192 is the anode, the forward direction of the light emitting current is from the second electrode 192 to the first electrode 162 . direction, a relatively high first driving voltage V1 is applied to the upper ion shielding electrode EL1 and a relatively low second driving voltage V2 is applied to the lower counter electrode EL2. will do Accordingly, the electric field E is induced along the forward direction of the organic light emitting diode De.

Meanwhile, it is preferable to apply the driving voltages V1 and V2 so that the electric field E is continuously applied while the organic light emitting diode display device 100 is being driven.

Hereinafter, a method of manufacturing an organic light emitting diode display according to a first embodiment of the present invention will be described with reference to the drawings.

6 is a diagram schematically illustrating a plasma processing apparatus for plasma processing a first electrode of an organic light emitting diode display according to a first embodiment of the present invention, and FIG. 7 is a plasma processing process using the plasma processing apparatus of FIG. 6 . It is a diagram schematically showing the appearance of an organic light emitting diode display device in the city. 6 and 7, for convenience of explanation, related main components are mainly illustrated.

6 and 7 , in the plasma processing apparatus 500 for plasma processing the first electrode 162 according to the present embodiment, the upper first electrode plate 520 and the first electrode positioned in the chamber 510 are and a second electrode plate 530 facing the plate 520 . Here, the substrate 110 in which the first electrode 162 , the bank layer 170 , and the ion shielding electrode EL1 are formed is placed on the upper surface of the second electrode plate 520 .

In performing the plasma treatment process, for example, the power supply unit 540 applies a high potential voltage VH to the first electrode plate 520 and applies a low potential voltage VL to the second electrode plate 530 . is applied, and thus plasma is generated in the reflection region inside the chamber 510 .

Meanwhile, referring to FIG. 6 , as a peripheral region of the substrate 110 , a plurality of pixel regions P are configured to display an image, and the non-display region NA around the display region NA includes a display region AA. A transmission wiring pattern SL for transmitting a positive shielding voltage VP may be formed to the ion shielding electrode EL1 configured therein. A voltage applying means such as a pin is connected to the transmission wiring pattern SL, and the shielding voltage VP is applied from the power supply 540, and the applied shielding voltage VP is passed through the transmission wiring pattern SL. to the ion shielding electrode EL1 inside the display area AA. As such, by forming the transmission wiring pattern SL in the non-display area NA, the shielding voltage VP can be easily supplied to the ion shielding electrode EL1.

As such, when the shielding voltage VP is applied to the ion shielding electrode EL1, the ion shielding electrode EL1 has a positive charge. Accordingly, the cation plasma for plasma-treating the first electrode 162 is prevented from colliding with the surface of the bank layer 170 due to the influence of the positive charge of the ion shielding electrode EL1 . In addition, the ion shielding electrode EL1 acts as a guide ring so that the positive ion plasma is concentrated on the surface of the first electrode 162 , so that the plasma treatment efficiency for the first electrode 162 is improved. .

After plasma treatment is performed on the first electrode 162 as described above, an organic layer is formed through a solution process. At this time, since the bank layer 170 maintains hydrophobicity by the ion shielding electrode EL1, the corresponding organic layer can be divided and formed in the pixel area P unit as desired.

Meanwhile, in the above-mentioned bar, the case in which the bank layer 170 having a single layer structure is provided has been described as an example, but as another example, a bank layer having a double layer structure may be used. Referring to FIG. 8 in this regard, the bank layer 170 may be composed of a first bank layer 171 positioned on the upper portion and a second bank layer 172 positioned on the lower portion. In FIG. 8, for convenience of explanation, the related configuration is mainly illustrated.

In this case, the first bank layer 171 positioned thereon is configured to have hydrophobicity as in the above-described example. Meanwhile, the lower second bank layer 172 may be configured to have hydrophilicity, and the second bank layer 172 may be formed to have a wider width than the first bank layer 171 .

When the bank layer 170 having the double-layer structure is formed in this way, an advantage of improving the thickness uniformity in the pixel region of the organic film formed by the solution process occurs.

In addition, in the above-mentioned bar, the case where the second protective film 161 having a planarization function is formed along the entire surface of the substrate has been described as an example. As another example, the second protective film 161 corresponding to the bank layer 170 is formed on the substrate It may be configured to be removed to have a shape concave in the direction. In this regard, reference may be made to FIGS. 9 and 10 . 9 and 10, for convenience of explanation, the related configuration is mainly illustrated.

In FIG. 9 , a case in which the second passivation layer 161 is completely removed and recessed corresponding to the bank layer 170 is formed on the exposed upper surface of the first passivation layer 160 is illustrated in FIG. 9 .

Also, in FIG. 10 , the second protective film 161 may be partially removed, that is, partially removed in the thickness direction and recessed, and the bank layer 170 may be formed on the upper surface of the second protective film 161 in this portion. In forming the partially removed second passivation layer 161 as described above, for example, a halftone mask having a semi-transmissive portion may be used.

Meanwhile, in the case of FIGS. 9 and 10 , the bank layer 170 having a double layer structure may be used as shown in FIG. 8 .

When the second passivation layer 161 is removed and formed in a concave shape, the step of the substrate surface may be entirely alleviated in a state in which the bank layer 170 is formed in the concave portion. That is, since the bank layer 170 has a certain thickness, a step is generated in the substrate surface by the bank layer 170 . Due to such a step difference, when a laminated film is subsequently formed on the entire surface of the substrate, there may be a problem in that the laminated film is disconnected due to the step difference. It has the effect of ameliorating the problems caused.

In particular, when the bank layer 170 of the double layer structure is used, the step becomes larger, so the effect of removing the second passivation layer 161 is more effective when the bank layer 170 of the double layer structure is used. can be

<Second embodiment>

11 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to a second embodiment of the present invention.

The organic light emitting diode display device of the second embodiment is substantially the same as the organic light emitting diode display device of the first embodiment except for the arrangement of the counter electrode. For convenience of description, a detailed description of the same and similar components may be omitted.

Referring to FIG. 11 , in the organic light emitting diode display 100 according to the second embodiment of the present invention, a switching thin film transistor (see Ts in FIG. 2 ) formed in each pixel region P on a substrate 110 and driving It may include a thin film transistor Td and an organic light emitting diode De positioned on the thin film transistors and connected to the driving thin film transistor Td.

In particular, in the organic light emitting diode display 100 according to the present embodiment, the ion shielding electrode EL1 is formed on the surface of the bank layer 170, and a positive charge is applied during a solution process for the organic film to shield the positive ion plasma. provided

Furthermore, an ion shielding electrode EL1 and a counter electrode EL2 for inducing an electric field may be provided under the bank layer 170 . The counter electrode EL2 of this embodiment is a first protective layer 160 and a second protective layer. It may be disposed between 161 .

If the cross-sectional structure of the organic light emitting diode display 100 having such a configuration will be described in more detail, a patterned semiconductor layer 122 is formed on the substrate 110 .

Here, the substrate 110 may be a glass substrate or a plastic substrate. The semiconductor layer 122 may be made of an oxide semiconductor material. In this case, a light blocking pattern (not shown) and a buffer layer (not shown) may be formed under the semiconductor layer 122 , and the light blocking pattern is formed of the semiconductor layer 122 . By preventing light from being incident, the semiconductor layer 122 is prevented from being deteriorated by the light. As another example, the semiconductor layer 122 may be made of polycrystalline silicon, and in this case, both edges of the semiconductor layer 122 may be doped with impurities.

A gate insulating layer 130 may be formed on the entire surface of the substrate 110 as an insulating layer made of an insulating material on the semiconductor layer 122 . The gate insulating layer 130 may be formed of an inorganic insulating material such as _{silicon oxide (SiO 2 ).} Meanwhile, when the semiconductor layer 122 is made of polycrystalline silicon, the gate insulating layer 130 _{may be formed of silicon oxide (SiO 2} ) or silicon nitride (SiNx).

A gate electrode 132 made of a conductive material such as metal is formed on the gate insulating layer 130 to correspond to the center of the semiconductor layer 122 . In addition, a gate wiring (refer to GL of FIG. 2 ) and a first capacitor electrode (not shown) may be formed on the gate insulating layer 130 . The gate wiring extends along the first direction, and the first capacitor electrode is connected to the gate electrode 132 .

Meanwhile, in this embodiment, the case in which the gate insulating layer 130 is formed on the entire surface of the substrate 110 is taken as an example, but the gate insulating layer 130 may be patterned in the same shape as the gate electrode 132 .

An interlayer insulating layer 140 as an insulating layer made of an insulating material may be formed on the entire surface of the substrate 110 on the gate electrode 132 . The interlayer insulating layer 140 _{may be formed of an inorganic insulating material such as silicon oxide (SiO 2} ) or silicon nitride (SiNx), or an organic insulating material such as benzocyclobutene or photo acryl. .

The interlayer insulating layer 140 may include first and second contact holes 140a and 140b exposing both sides of the semiconductor layer 122 . The first and second contact holes 140a and 140b are positioned on both sides of the gate electrode 132 to be spaced apart from the gate electrode 132 . Furthermore, the first and second contact holes 140a and 140b may also be formed in the gate insulating layer 130 . In contrast, when the gate insulating layer 130 is patterned to have the same shape as the gate electrode 132 , the first and second contact holes 140a and 140b are formed in the interlayer insulating layer 140 .

Source and drain electrodes 152 and 154 are formed on the interlayer insulating layer 140 using a conductive material such as a metal. In addition, a data line (see DL of FIG. 2 ), a power line (not shown), and a second capacitor electrode (not shown) extending in the second direction may be formed on the interlayer insulating layer 140 .

The source and drain electrodes 152 and 154 are spaced apart from the center of the gate electrode 132 and contact both sides of the semiconductor layer 122 through the first and second contact holes 140a and 140b, respectively. Although not shown, the data line extends along the second direction and intersects the gate line to define the pixel region P, and the power line for transmitting the high potential power voltage (see VDD in FIG. 2 ) is spaced apart from the data line. Located. The second capacitor electrode is connected to the drain electrode 154 and overlaps the first capacitor electrode, and the interlayer insulating film 140 between the two electrodes is used as a dielectric to form a storage capacitor.

Meanwhile, the semiconductor layer 122 , the gate electrode 132 , and the source and drain electrodes 152 and 154 form the driving thin film transistor Td. Here, the driving thin film transistor Td is a coplanar in which the gate electrode 132 and the source and drain electrodes 152 and 154 are positioned on one side of the semiconductor layer 122 , that is, on the semiconductor layer 122 . It may be configured to have a structure.

As another example, the driving thin film transistor Td may have an inverted staggered structure in which a gate electrode is positioned under a semiconductor layer and a source electrode and a drain electrode are positioned above the semiconductor layer. In this case, the semiconductor layer may be made of amorphous silicon.

Meanwhile, although not shown, a switching thin film transistor (see Ts in FIG. 2 ) having the same structure as the driving thin film transistor Td is formed on the substrate 110 . The gate electrode 132 of the driving thin film transistor Td is electrically connected to the drain electrode of the switching thin film transistor, and the source electrode 152 of the driving thin film transistor Td is connected to the power supply line. In addition, the gate electrode and the source electrode of the switching thin film transistor are respectively connected to the gate line and the data line.

A first passivation layer 160 may be formed on the entire surface of the substrate 110 as an insulating layer made of an insulating material on the source and drain electrodes 152 and 154 . The first passivation layer 160 may be formed of an inorganic insulating material such as silicon _{oxide (SiO 2 ) or silicon nitride (SiNx).}

On the first passivation layer 160 , as an insulating layer made of an insulating material, a second passivation layer 161 may be formed on the entire surface of the substrate 110 . The second passivation layer 161 may be formed of an organic insulating material such as benzocyclobutene or photoacrylic. The second passivation layer 161 functions as a planarization layer so that its upper surface is substantially flat.

As such, in the present embodiment, the protective layers 160 and 161 having a double layer structure may be formed on the driving thin film transistor Td. The first and second passivation layers 160 and 161 have a drain contact hole 160a exposing the drain electrode 154 .

A patterned first electrode 162 for each pixel region P may be formed on the second passivation layer 161 . The first electrode 162 contacts the drain electrode 154 through the drain contact hole 160a. The first electrode 162 may be formed of a conductive material having a relatively high work function, for example, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

A bank layer 170 is formed on the first electrode 162 as an insulating film made of an insulating material. The bank layer 170 is disposed to surround each pixel area P along the boundary of the neighboring pixel area P. As shown in FIG. The bank layer 170 has a through hole 170a exposing the first electrode 162 of each pixel region P, and covers the edge of the first electrode 162 .

Such a bank layer 170 is formed to have a hydrophobic property. In this regard, for example, the bank layer 170 contains an additive such as a polymer having hydrophobicity, that is, a hydrophobic additive, and the hydrophobic additive is used in a curing process (eg, a soft baking process) for forming the bank layer 170 . is moved to the surface, and the surface of the bank layer 170 becomes hydrophobic.

As such, since the bank layer 170 has a hydrophobic property, the corresponding organic layer can be formed by dividing the organic layer into pixel areas P units when the organic layer is formed using a subsequent solution process.

The organic light emitting layer 180 is formed on the first electrode 162 exposed through the transmission hole 170a of the bank layer 170 . The organic light emitting layer 180 is formed in a multi-layered structure including a plurality of organic layers including the light emitting material layer 183 .

In this regard, for example, when the first electrode 162 is an anode and the second electrode 192 is a cathode, a hole injection layer and a hole transport layer are formed between the first electrode 162 and the light emitting material layer 183 . They may be sequentially disposed, and an electron transport layer and an electron injection layer may be sequentially disposed between the light emitting material layer 183 and the second electrode 192 . In this embodiment, for convenience of explanation, the hole injection layer and the hole transport layer as the organic film under the light emitting material layer 183 are illustrated as a single-layer organic film 181 , and the organic film on the light emitting material layer 183 is shown. As a film, the electron injection layer and the electron transport layer are illustrated as a single-layer organic film 185 .

Meanwhile, in some cases, at least one of the hole injection layer and the hole transport layer may be omitted, and at least one of the electron injection layer and the electron transport layer may be omitted.

As such, the plurality of organic layers constituting the organic light emitting layer 180 may be disposed in various shapes.

At this time, in forming the organic light emitting layer 180 according to the present embodiment, some organic layers disposed on a relatively lower portion are formed in units of the pixel area P by a solution process, and the remaining organic layers disposed on a relatively upper part are formed by a deposition process. It is preferable to be substantially formed on the entire surface of the substrate. Here, as the solution process, a printing method or a coating method may be used, and an inkjet printing method or a nozzle printing method may be used as the printing method. Meanwhile, the deposition process may be formed by a PECVD method or the like.

In this regard, for example, a solution process is applied to the first organic film 181 , which is the organic film 181 having a single-layer or multi-layer structure located under the light-emitting material layer 183 , and the hydrophobic bank layer 170 is applied. ) by dividing the first organic layer 181 in units of the pixel area P may be formed.

In addition, the light emitting material layer 183 may also be formed in units of the pixel area P by a solution process. On the other hand, in the case of a color display device having red, green, and blue pixel areas, in forming the light emitting material layer 183 , for example, the red and green light emitting material layers respectively formed in the red and green pixel areas are mixed with a solution. It is formed by a process, and in a subsequent process thereto, a blue light emitting material layer may be formed on the entire surface of the substrate by a deposition process. Of course, the blue light emitting material layer may also be formed in the blue pixel region by applying a solution process.

On the other hand, the deposition process is applied to the second organic layer 185 , which is the organic layer 185 having a single or multilayer structure positioned on the light emitting material layer 183 , and is formed to substantially cover the entire display area on the substrate. can be That is, the second organic layer 185 may be formed to cover not only the pixel region P but also the bank layer 170 at the boundary thereof.

As described above, when a solution process is applied to some organic layers constituting the organic light emitting layer 180 to be formed, the mask process for the organic layers is reduced, thereby improving process efficiency.

A second electrode 192 made of a conductive material having a relatively low work function may be formed on the entire surface of the substrate 110 on the organic light emitting layer 180 configured as described above. That is, the second electrode 192 may be formed on the surface of the second organic layer 185 of the organic light emitting layer 180 .

Here, the second electrode 192 may be formed of aluminum, magnesium, silver, or an alloy thereof.

The first electrode 162 , the organic light emitting layer 180 , and the second electrode 192 form an organic light emitting diode De. Here, one of the first and second electrodes 162 and 192 serves as an anode, and the other serves as a cathode.

On the other hand, the organic light emitting diode display 100 according to the present embodiment may be configured as a top emission type in which light emitted from the organic light emitting layer 180 is outputted to the outside through the second electrode 192 . have. In this case, the first electrode 162 may have a multilayer structure further including a reflective layer (not shown) made of an opaque conductive material. For example, the reflective layer may be formed of an aluminum-palladium-copper (APC) alloy, and the first electrode 162 may have a triple layer structure of ITO/APC/ITO. In addition, the second electrode 192 has a relatively thin thickness so that light is transmitted, and the light transmittance of the second electrode 192 may be about 45-50%.

As another example, the organic light emitting diode display 100 may be configured as a bottom emission type in which light emitted from the organic light emitting layer 180 is outputted to the outside through the first electrode 162 .

In addition, the organic light emitting diode display 100 according to the present embodiment may include a color filter corresponding to each pixel region P. In this case, the color filter may be disposed on the side in the light emitting direction, for example, on the lower side of the organic light emitting diode De in the case of the bottom light emitting type and above the organic light emitting diode De in the case of the upper light emitting type. have. As such, when a color filter is used, an advantage of improving color gamut may occur.

Meanwhile, in this embodiment, the ion shielding electrode EL1 is formed on the surface of the hydrophobic bank layer 170 . The ion shielding electrode EL1 serves to prevent the hydrophobic surface of the bank layer 170 from becoming hydrophilic, and is substantially formed in the same shape as the bank layer 170 in plan view. That is, the ion shielding electrode EL1 is formed to surround the periphery of each pixel region P along the boundary of the neighboring pixel region P. As shown in FIG.

On the other hand, on the ion shielding electrode EL1, a second organic layer 185 substantially functioning as an insulating layer is positioned, so that when the organic light emitting diode De is driven, it is electrically shorted with the second electrode 192 positioned thereon. can be prevented. As such, the second organic layer 185 may perform a function of not only transporting carriers flowing in from the second electrode 192 , but also preventing an electrical short circuit between the ion shielding electrode EL1 and the second electrode 192 . there will be

In addition, the ion shielding electrode EL1 is formed on the upper surface as a part of the surface of the bank layer 170 so as to be spaced apart from the first electrode 162 , and is substantially electrically disconnected from the first electrode 162 . The ion shielding electrode EL1 may be formed of, for example, at least one of metal materials such as silver (Ag), ITO, and copper (Cu).

After the ion shielding electrode EL1 is formed on the bank layer 170, plasma treatment is performed on the first electrode 162. During this process, a positive charge is applied to the ion shielding electrode EL1. . That is, by applying a positive voltage to the ion shielding electrode EL1 , positive charges of a positive polarity are introduced into the ion shielding electrode EL1 , and the ion shielding electrode EL1 has a positive polarity. Accordingly, there is an effect of preventing the cation plasma generated for the plasma treatment from colliding with the surface of the bank layer 170 due to the influence of the positive charges charged in the ion shielding electrode EL1 . In addition, the ion shielding electrode EL1 acts as a guide ring so that the positive ion plasma is concentrated on the surface of the first electrode 162 , so that the plasma treatment efficiency for the first electrode 162 is improved. .

In addition, according to the present exemplary embodiment, the counter electrode EL2 may be formed under the bank layer 170 , for example, on the first passivation layer 160 . That is, the counter electrode EL2 may be disposed to face the ion shield electrode EL1 with the bank layer 170 and the second passivation layer 161 interposed therebetween.

In order to form such a counter electrode EL2, a separate mask process may be additionally performed.

When the organic light emitting diode De is driven, the counter electrode EL2 operates together with the ion shielding electrode EL1 to generate an electric field inside the organic light emitting diode De.

At this time, the electric field generated through the counter electrode EL2 and the ion shielding electrode EL1 passes through the organic light emitting diode De, and the direction of the electric field acting on the organic light emitting diode De is ) in the forward direction.

Accordingly, the energy barrier is lowered and the energy level is taper, so that the injection and transport efficiency of carriers can be improved.

For this reason, by applying a high voltage to the first and second electrodes 162 and 192 in order to improve carrier injection and transport efficiency, the organic layer is deteriorated and the lifespan of the organic light emitting diode De is reduced. will have

Accordingly, in the present embodiment, a driving voltage that induces the electric field E in the forward direction of the organic light emitting diode De is applied to the ion shielding electrode EL1 and the counter electrode EL2.

In this regard, reference may be made to FIG. 5 of the first embodiment described above. That is, when the first electrode 162 of the organic light emitting diode De is the anode and the second electrode 192 is the cathode, the forward direction of the light emitting current is from the first electrode 162 to the second electrode 192 direction. , a relatively high first driving voltage (see V1 of FIG. 5 ) is applied to the counter electrode EL2 , and a relatively low second driving voltage (see V2 of FIG. 5 ) is applied to the ion shielding electrode EL1 . . Accordingly, an electric field is induced along the forward direction of the organic light emitting diode De.

As another example, when the first electrode 162 of the organic light emitting diode De is the cathode and the second electrode 192 is the anode, a relatively high first driving voltage is applied to the ion shielding electrode EL1, A relatively low second driving voltage is applied to the counter electrode EL2 . Accordingly, an electric field is induced along the forward direction of the organic light emitting diode De.

Meanwhile, it is preferable to apply a driving voltage so that the electric field E is continuously applied while the organic light emitting diode display 100 is being driven.

For a method of manufacturing an organic light emitting diode display according to the second embodiment of the present invention, reference may be made to FIGS. 6 and 7 of the first embodiment described above.

That is, when a shielding voltage (refer to VP of FIG. 6 ) is applied to the ion shielding electrode EL1 during the plasma treatment process for the first electrode 162 , the ion shielding electrode EL1 has a positive charge. Accordingly, the cation plasma for plasma-treating the first electrode 162 is prevented from colliding with the surface of the bank layer 170 due to the influence of the positive charge of the ion shielding electrode EL1 . In addition, the ion shielding electrode EL1 acts as a guide ring so that the positive ion plasma is concentrated on the surface of the first electrode 162 , so that the plasma treatment efficiency for the first electrode 162 is improved. .

After plasma treatment is performed on the first electrode 162 as described above, an organic layer is formed through a solution process. At this time, since the bank layer 170 is maintained hydrophobic by the ion shielding electrode EL1, the corresponding organic layer can be divided and formed in pixel area units as desired.

Meanwhile, in the above-mentioned bar, the case in which the bank layer 170 having a single layer structure is provided has been described as an example, but as another example, a bank layer having a double layer structure may be used. In this regard, referring to FIG. 12 , the bank layer 170 may include a first bank layer 171 positioned on the upper portion and a second bank layer 172 positioned on the lower portion.

In this case, the first bank layer 171 positioned thereon is configured to have hydrophobicity as in the above-described example. Meanwhile, the lower second bank layer 172 may be configured to have hydrophilicity, and may be formed to have a wider width than the first bank layer 171 .

When the bank layer 170 having the double-layer structure is formed in this way, an advantage of improving the thickness uniformity in the pixel region of the organic film formed by the solution process occurs.

In addition, in the above-mentioned bar, the case where the second protective film 161 having a planarization function is formed along the entire surface of the substrate has been described as an example. As another example, the second protective film 161 corresponding to the bank layer 170 is formed on the substrate It may be configured to be removed to have a shape concave in the direction. In this regard, reference may be made to FIGS. 13 and 14 . 13 and 14, for convenience of explanation, the related configuration is mainly illustrated.

In FIG. 13 , a case in which the second passivation layer 161 is completely removed and recessed corresponding to the bank layer 170 is formed on the exposed upper surface of the first passivation layer 160 is illustrated in FIG. 13 .

Also, in FIG. 14 , the second passivation layer 161 may be partially removed, that is, partially removed in the thickness direction and recessed, and the bank layer 170 may be formed on the upper surface of the second passivation layer 161 in this portion. In forming the partially removed second passivation layer 161 as described above, for example, a halftone mask having a semi-transmissive portion may be used.

Meanwhile, in the case of FIGS. 13 and 14 , the bank layer 170 having a double layer structure may be used as shown in FIG. 12 .

When the second passivation layer 161 is removed and formed in a concave shape, the step of the substrate surface may be entirely alleviated in a state in which the bank layer 170 is formed in the concave portion. That is, since the bank layer 170 has a certain thickness, a step is generated on the substrate surface by the bank layer 170 . Due to such a step difference, when a laminated film is subsequently formed on the entire surface of the substrate, there may be a problem in that the laminated film is disconnected due to the step difference. It has the effect of ameliorating the problems caused.

In particular, when the bank layer 170 of the double layer structure is used, the step becomes larger, so the effect of removing the second passivation layer 161 is more effective when the bank layer 170 of the double layer structure is used. can be

As described above, in the organic light emitting diode display device according to the embodiment of the present invention, the ion shielding electrode is formed on a part of the surface of the hydrophobic bank layer formed along the boundary of the pixel region, and the plasma treatment process for the first electrode is performed. A positive charge is applied to the ion shielding electrode. Accordingly, the ion shielding electrode generates a repulsive force with respect to the cation plasma generated during the plasma treatment process, thereby preventing the cation plasma from colliding with the surface of the bank layer, thereby preventing the hydrophobic bank layer from becoming hydrophilic. will occur

Furthermore, a counter electrode opposite to the ion shielding electrode is formed on the lower portion with at least one insulating film including a bank layer interposed therebetween, and a voltage is applied between the ion shielding electrode and the counter electrode when the organic light emitting diode is driven in the organic light emitting diode. An electric field is generated along the forward direction. Accordingly, the energy barrier between the stacked layers of the organic light emitting diode is lowered and a taper is formed in the energy level. For this reason, the effect of improving the injection and transport efficiency of the carrier occurs.

The above-described embodiment of the present invention is an example of the present invention, and free modifications are possible within the scope included in the spirit of the present invention. Accordingly, the present invention includes modifications of the present invention provided they come within the scope of the appended claims and their equivalents.

100: liquid crystal display 110: substrate
122: semiconductor layer 130: gate insulating film
132: gate electrode 140: interlayer insulating film
140a: first contact hole 140b: second contact hole
152: source electrode 154: drain electrode
160: first protective film 161: second protective film
160a: drain contact hole 162: first electrode
170: bank layer 171: first bank layer
172: second bank layer 180: organic light emitting layer
181: first organic layer 183: light emitting material layer
185: second organic layer 192: second electrode
EL1: Ion shielding electrode EL2: Counter electrode

Claims (14)

an organic light emitting diode positioned in a pixel region on a substrate, the organic light emitting diode including a first electrode on a passivation layer, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer;
a hydrophobic bank layer positioned at the boundary of the pixel area;
an ion shielding electrode positioned on a portion of the surface of the bank layer;
includes,
The ion shielding electrode is spaced apart from the second electrode and is electrically disconnected,
The organic light emitting diode display device further comprising a counter electrode positioned under the bank layer and spaced apart from the first electrode and overlapping the ion shielding electrode.
The method of claim 1,
The organic light emitting layer includes a light emitting material layer located in the pixel region, and a second organic film covering the light emitting material layer and the ion shielding electrode and located under the second electrode.
Organic light emitting diode display.
3. The method of claim 2,
The organic light emitting layer includes a first organic layer positioned below the light emitting material layer.
Organic light emitting diode display.
The method of claim 1,
The ion shielding electrode has a narrower width than the bank layer, exposing a portion of the top surface of the bank layer.
Organic light emitting diode display.
The method of claim 1,
The counter electrode is made of the same material as the first electrode and is located on the same layer.
Organic light emitting diode display.
The method of claim 1,
The counter electrode is positioned between the insulating film on the driving thin film transistor connected to the organic light emitting diode and the protective film on the insulating film.
Organic light emitting diode display.
The method of claim 1,
A hydrophilic second bank layer positioned below the bank layer
An organic light emitting diode display comprising a.
The method of claim 1,
The portion of the passivation layer under the bank layer has a shape recessed in the direction of the substrate.
Organic light emitting diode display.
9. The method of claim 8,
The portion of the protective film under the bank layer is removed in whole or in part to have a concave shape.
Organic light emitting diode display.
forming a first electrode in a pixel region over a passivation layer on a substrate;
forming a hydrophobic bank layer at a boundary of the pixel region;
forming an ion shielding electrode on a portion of the surface of the bank layer;
performing plasma treatment on the first electrode while a positive charge is applied to the ion shielding electrode;
After performing the plasma treatment, forming an organic light emitting layer and a second electrode
includes,
The ion shielding electrode is spaced apart from the second electrode and is electrically disconnected,
and forming a counter electrode located under the bank layer spaced apart from the first electrode and overlapping the ion shielding electrode.
11. The method of claim 10,
The step of forming the organic light emitting layer,
forming a first organic layer and a light emitting material layer thereon on the first electrode using a solution process;
forming a second organic film on the light emitting material layer on the entire surface of the substrate using a deposition process;
A method of manufacturing an organic light emitting diode display comprising a.
11. The method of claim 10,
The ion shielding electrode has a narrower width than the bank layer, exposing a portion of the top surface of the bank layer.
A method for manufacturing an organic light emitting diode display.
11. The method of claim 10,
The counter electrode is formed in the same process as the first electrode.
A method for manufacturing an organic light emitting diode display.
11. The method of claim 10,
The counter electrode is formed between the insulating film on the driving thin film transistor connected to the organic light emitting diode and the protective film on the insulating film.
A method for manufacturing an organic light emitting diode display.

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