KR102318538B1 - substrate processing apparatus and its operating method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and an operating method thereof. The present invention also relates to a ceramic processing apparatus and an operating method thereof. A focus ring in accordance with an embodiment of the present invention includes a focus member having a first focus ring and a second focus ring coupled to each other by overlapping each other, and a spacer member disposed therebetween, so that a space for discharging a product generated from the focus member can be formed. Therefore, the etch rate of the entire substrate can be improved by discharging the material, generated during an etching process, through the discharge space. In addition, in accordance with the present invention, in a ceramic substrate and a method for manufacturing a ceramic substrate, a metal layer is formed on an adhesive layer in which copper paste mixed with copper powder and binder is printed and applied to a ceramic material, such that the difference in physical properties such as thermal expansivity (or coefficient of thermal expansion) between the ceramic material and the metal layer can be alleviated to minimize heterojunction resistance.

Description

Substrate processing apparatus and its operating method

The present invention relates to a substrate processing apparatus and a method for operating the same.

The present invention also relates to a ceramic processing apparatus and a method for operating the same.

The present invention also relates to a ceramic processing apparatus incorporating various sensors and control devices.

The ceramic substrate is constituted by integrally attaching a metal foil such as copper foil to a ceramic substrate. The ceramic substrate is generated through a manufacturing process such as Active Metal Brazing (AMB) and Direct Bond Copper (DBC), and may be classified into a ceramic AMB substrate, a ceramic DBC substrate, etc. according to a difference in the manufacturing process.

A ceramic DBC substrate is manufactured by a process of directly bonding an oxidizable metal to a ceramic substrate, and a ceramic AMB substrate is manufactured by brazing an active metal to a ceramic substrate to form a layer, and brazing a metal to a brazing layer.

In both processes, a pattern layer is formed by etching after a metal layer is formed and then a photolithography process is performed.

However, this conventional method of manufacturing a ceramic substrate has disadvantages in that the pattern layer forming process is complicated and the brazing and etching processes are relatively excessive.

The matters described in the above background art are intended to help the understanding of the background of the invention, and may include matters that are not already known to those of ordinary skill in the art to which this technology belongs.

Laid-Open Patent Publication No. 10-2018-0037865 (2018.04.13) Laid-Open Patent Publication No. 10-2020-0122884 (2020.10.28)

An object of the present invention is to provide an improved ceramic processing apparatus and a method for operating the same.

An object of the present invention is to provide a method for manufacturing a ceramic substrate that can be manufactured by minimizing a brazing and etching process, and a ceramic substrate manufactured by the method.

The technical problems to be achieved in the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the description below. will be able

One embodiment of the present invention provides a system for processing a substrate, comprising: a substrate processing apparatus; The substrate processing apparatus includes: a chamber for etching a substrate; an electrostatic chuck provided in the chamber to support the substrate; Focusing a process gas onto the substrate, a focus member having a first focus ring and a second focus ring coupled to each other superimposed on each other, and a focus member disposed between the first focus ring and the second focus ring and generated from the focus member A system for processing a substrate is provided that includes a spacer that defines a space for discharging product material.

The system may include a gas supply unit for supplying a gas into the chamber; It may be characterized in that it further comprises.

The substrate processing apparatus may further include a sensor unit generating sensor information, and the system may include: a server obtaining the sensor information from the sensor unit and generating control information based on the sensor information; may further include.

The server may control the gas supply unit based on the control information.

The system may include: a terminal for obtaining at least one of the sensing information and the control information from the server and displaying it through an output interface; may further include.

The server may determine whether the sensing information satisfies a predetermined and/or preset criterion, and generate the control information based on whether the sensing information satisfies a predetermined and/or preset criterion have.

In addition, the present invention provides a method for manufacturing a ceramic substrate according to an embodiment of the present invention in order to achieve the above object, comprising the steps of preparing a base substrate made of a ceramic material, printing copper paste on at least one surface of the base substrate to form a bonding layer and forming a metal layer on one surface of the bonding layer.

The preparing of the base substrate may include preparing the base substrate by firing a ceramic material including any one of alumina, Zirconia Toughened Alumina (ZTA), AlN, and Si3N4. Preparing the base substrate may include forming a via hole passing through the base substrate and filling the via hole with a conductive material. Here, in the step of filling the conductive material, a conductive material, which is one of copper, tungsten, and silver, or an alloy including at least one of copper, tungsten, and silver, may be filled in the via hole.

The step of forming the bonding layer includes forming the bonding layer by printing a copper paste mixed with copper powder, ceramic metal oxide, Glass Frit, and an organic solvent on a base substrate to form a bonding layer, copper powder, ceramic metal oxide, Glass Frit and When the sum of the components of the organic solvent is 100%, copper powder is 80% or more and 85% or less, ceramic metal oxide is 1% or more and 5% or less, Glass Frit is 1% or more and 5% or less, and organic solvent is 5% or more 18 % or less.

The forming of the metal layer may include forming a conductive metal, which is one of copper and aluminum, or an alloy or clad including copper, on one surface of the bonding layer.

The method of manufacturing a ceramic substrate according to an embodiment of the present invention further includes the step of forming another metal layer on one surface of the metal layer, and in the step of forming the other metal layer, at least one of the composition and thickness of the other conductive metal is formed differently from the conductive metal. can do.

In order to achieve the above object, a ceramic substrate according to an embodiment of the present invention may include a base substrate made of a ceramic material, a bonding layer formed of copper paste formed on at least one surface of the base substrate, and a metal layer formed on one surface of the bonding layer.

At this time, the base substrate includes any one of alumina, Zirconia Toughened Alumina (ZTA), AlN and Si ₃ N ₄ , and a via hole filled with a conductive material is formed, and the conductive material is one of copper, tungsten and silver. Or, it may be an alloy including at least one of copper, tungsten, and silver.

The bonding layer is a copper paste in which copper powder, ceramic metal oxide, glass frit and organic solvent are mixed, and when the sum of components of copper powder, ceramic metal oxide, glass frit and organic solvent is 100%, copper powder is 80% or more 85% or less, the ceramic metal oxide may be 1% or more and 5% or less, the Glass Frit may be 1% or more and 5% or less, and the organic solvent may be 5% or more and 18% or less.

The metal layer may be one of copper and aluminum, or an alloy or clad including copper.

The ceramic substrate according to an embodiment of the present invention may further include another metal layer formed on one surface of the metal layer, and the other metal layer may have at least one of a composition and a thickness different from that of the metal layer.

In addition, an embodiment of the present invention includes the steps of placing a bare wafer inside a chamber in which a plasma etching process is performed, CF ₄ gas of 70 sccm to 130 sccm and O of 5 sccm to 20 sccm ₂ A step of first cleaning the inside of the chamber for 5 to 20 seconds using the plasma gas generated by injecting gas, and injecting 70 sccm to 130 sccm of CF ₄ gas and 5 sccm to 20 sccm of O ₂ gas. Secondary cleaning of the plasma etching chamber for 200 to 300 seconds using the generated plasma gas, and the first etching of the bare wafer using the plasma generated by injecting _{CF 4 gas} and, _{using a plasma generated by injecting Cl 2} gas, HBr gas, and HeO ₂ gas, the second etching of the firstly etched bare wafer is proposed.

In the first cleaning step, the pressure inside the chamber is 5 mT to 20 mT, the source power supplied into the chamber is 400 W to 1000 W, and the lower power supplied into the chamber Plasma etching may be performed at a bottom power of 10 W to 70 W.

In the second cleaning step, the pressure inside the chamber is 2 mT to 10 mT, the source power supplied into the chamber is 1000 W to 2000 W, and the lower power supplied into the chamber (bottom power) is set to 10 W ~ 70 W, each wavelength (wavelength) detected in the plasma etching process may be characterized in that the control time of the plasma etching process.

In the first etching step, the pressure inside the chamber is 2 [mT] to 8 [mT], and the source power supplied into the chamber is 200 [W] to 800 [W], The lower power supplied into the chamber is 10 [W] ~ 60 [W], and 10 [sccm] ~ 80 [sccm] of CF ₄ gas is injected, 20 [sec] ~ 60 [sec] ] can be characterized by performing plasma etching during the.

In the second etching step, the pressure inside the chamber is 2 [mT] to 8 [mT], the source power supplied into the chamber is 300 [W] to 600 [W], and the The bottom power supplied into the chamber is 50 [W] ~ 100 [W], and 50 [sccm] ~ 100 [sccm] of Cl ₂ gas and 100 [sccm] ~ 200 [sccm] of HBr gas and 5 [sccm] to 20 [sccm] of HeO ₂ gas is injected, and plasma etching is performed for 50 to 100 seconds.

In the first cleaning step, the pressure inside the chamber is 5 mT to 20 mT, the source power supplied into the chamber is 400 W to 1000 W, and the lower power supplied into the chamber (bottom power) is 10 W ~ 70 W, CF ₄ gas of 70 sccm ~ 130 sccm and O2 gas of 5 sccm ~ 20 sccm are injected, plasma etching is performed for 5 seconds ~ 20 seconds, the second In the washing step, the pressure inside the chamber is 2 mT to 10 mT, the source power supplied into the chamber is 1000 W to 2000 W, and the bottom power supplied into the chamber is ) to 10 W ~ 70 W, CF ₄ gas of 70 sccm ~ 130 sccm and O2 gas of 5 sccm ~ 20 sccm are injected, and plasma etching is performed for 200 seconds ~ 300 seconds, the second etching step is The pressure inside the chamber is 2 [mT] to 8 [mT], the source power supplied into the chamber is 300 W to 600 W, and the bottom power supplied into the chamber is ) to 50 W to 100 W, 50 sccm to 100 sccm of Cl2 gas, 100 sccm to 200 sccm of HBr gas, and 5 sccm to 20 sccm of HeO ₂ gas were injected, and plasma etching was performed for 50 to 100 seconds. It can be characterized by carrying out.

A focus ring according to an embodiment of the present invention includes a focus member having a first focus ring and a second focus ring coupled to each other overlapping each other, and a spacer member disposed therebetween, so that the product material generated from the focus member is produced from the focus ring. An exhaust space may be formed.

Thus, the etch rate of the entire substrate may be improved by discharging the material generated during the etching process through the discharge space.

In addition, according to the present invention, a ceramic substrate and a method for manufacturing a ceramic substrate include forming a metal layer on a bonding layer in which a copper paste mixed with copper powder and a binder is printed and applied to a ceramic substrate, whereby the coefficient of thermal expansion (or coefficient of thermal expansion) between the ceramic substrate and the metal layer. Heterojunction resistance can be minimized by mitigating the difference in physical properties, such as.

In addition, according to the present invention, a ceramic substrate and a method for manufacturing a ceramic substrate improve thermal shock resistance by forming a metal layer on a bonding layer in which a copper paste mixed with copper powder and a binder is printed and applied to a ceramic substrate, thereby improving thermal shock resistance compared to conventional ceramic substrates. It has the effect of securing reliability by extending the service life.

In addition, according to the present invention, the ceramic substrate and the method for manufacturing the ceramic substrate minimize the heterojunction resistance by forming a metal layer on the bonding layer in which a copper paste mixed with copper powder and a binder is printed on a ceramic substrate to minimize heterojunction resistance, compared to conventional ceramic substrates. It has the effect of improving the thermal shock resistance by implementing relatively high crack resistance and separation resistance.

In addition, according to the present invention, a ceramic substrate and a method for manufacturing a ceramic substrate include forming a metal layer on a bonding layer in which a copper paste mixed with copper powder and a binder is printed and applied to a ceramic substrate to minimize heterojunction resistance, so that the upper and lower surfaces of the ceramic substrate There is an effect that the area and thickness between the electrode patterns (that is, patterns formed by etching the metal layer) formed on the substrate can be asymmetrically implemented.

In addition, according to the present invention, a ceramic substrate and a method for manufacturing a ceramic substrate are formed by forming a metal layer on a bonding layer in which a copper paste mixed with copper powder and a binder is printed and applied to a ceramic substrate, thereby securing thermal shock resistance Si ₃ N ₄ , Compared to the conventional ceramic substrate to which SiC is applied, it can be produced at a relatively low product cost and has the effect of simplifying the manufacturing process.

The effects obtainable in the present invention are not limited to the above-mentioned effects, and other effects not mentioned may be clearly understood by those of ordinary skill in the art to which the present invention belongs from the following description. will be.

Other aspects, features and benefits as described above of certain preferred embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings.
1 is a perspective view illustrating a focus ring of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
2 is a side view illustrating a wafer edge etching apparatus according to an embodiment of the present invention.
3A is a cross-sectional view illustrating a configuration in a housing in a wafer edge etching apparatus according to an embodiment of the present invention.
3B is a bottom view illustrating a plasma headset in a wafer edge etching apparatus according to an embodiment of the present invention.
4A is a plan view illustrating a limit of a plasma formation range according to a magnetic field in a wafer edge etching apparatus according to an embodiment of the present invention.
4B is a cross-sectional view illustrating a limit of a plasma formation range according to a magnetic field in a wafer edge etching apparatus according to an embodiment of the present invention.
5A is a cross-sectional view illustrating a substrate processing apparatus according to an exemplary embodiment.
5B is a cross-sectional view illustrating a substrate processing apparatus according to an exemplary embodiment.
6A is a perspective view illustrating a focus ring according to an embodiment of the present invention.
6B is a cross-sectional view illustrating a focus ring according to an embodiment of the present invention.
7 is a cross-sectional view illustrating a portion of a substrate processing apparatus according to an embodiment of the present invention.
8A is a diagram illustrating a substrate processing system according to an embodiment of the present invention.
8B is a diagram illustrating a method of operating a substrate processing system according to an embodiment of the present invention.
9A is a view for explaining a method of manufacturing a ceramic substrate according to an embodiment of the present invention.
9B is a view for explaining a method of manufacturing a ceramic substrate according to an embodiment of the present invention.
10A is a view for explaining a step of preparing the base substrate of FIG. 9A.
FIG. 10B is a view for explaining a step of preparing the base substrate of FIG. 9A .
11A is a view for explaining a modified example of a method of manufacturing a ceramic substrate according to an embodiment of the present invention.
11B is a view for explaining a modified example of a method of manufacturing a ceramic substrate according to an embodiment of the present invention.
12A is a view for explaining a ceramic substrate according to an embodiment of the present invention.
12B is a view for explaining a ceramic substrate according to an embodiment of the present invention.
13 is a view for explaining an example of a ceramic substrate according to an embodiment of the present invention.
14 is a view for explaining a modified example of a ceramic substrate according to an embodiment of the present invention.
It should be noted that throughout the drawings, like reference numerals are used to denote the same or similar elements, features, and structures.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

In describing the embodiments, descriptions of technical contents that are well known in the technical field to which the present invention pertains and are not directly related to the present invention will be omitted. This is to more clearly convey the gist of the present invention without obscuring the gist of the present invention by omitting unnecessary description.

For the same reason, some components are exaggerated, omitted, or schematically illustrated in the accompanying drawings. In addition, the size of each component does not fully reflect the actual size. In each figure, the same or corresponding elements are assigned the same reference numerals.

Advantages and features of the present invention, and a method for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the art to which the present invention pertains. It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

At this time, it will be understood that each block of the flowchart diagrams and combinations of the flowchart diagrams may be performed by computer program instructions. These computer program instructions may be embodied in a processor of a general purpose computer, special purpose computer, or other programmable data processing equipment, such that the instructions performed by the processor of the computer or other programmable data processing equipment are not described in the flowchart block(s). It creates a means to perform functions. These computer program instructions may also be stored in a computer-usable or computer-readable memory that may direct a computer or other programmable data processing equipment to implement a function in a particular manner, and thus the computer-usable or computer-readable memory. It is also possible that the instructions stored in the flow chart block(s) produce an article of manufacture containing instruction means for performing the function described in the flowchart block(s). The computer program instructions may also be mounted on a computer or other programmable data processing equipment, such that a series of operational steps are performed on the computer or other programmable data processing equipment to create a computer-executed process to create a computer or other programmable data processing equipment. It is also possible that instructions for performing the processing equipment provide steps for performing the functions described in the flowchart block(s).

Additionally, each block may represent a module, segment, or portion of code that includes one or more executable instructions for executing specified logical function(s). It should also be noted that in some alternative implementations it is also possible for the functions recited in blocks to occur out of order. For example, two blocks shown one after another may in fact be performed substantially simultaneously, or it is possible that the blocks are sometimes performed in the reverse order according to the corresponding function.

At this time, the term '~ unit' used in this embodiment means software or hardware components such as field-programmable gate array (FPGA) or ASIC (Application Specific Integrated Circuit), and '~ unit' refers to what role carry out the However, '-part' is not limited to software or hardware. The '~ unit' may be configured to reside on an addressable storage medium or may be configured to refresh one or more processors. Thus, as an example, '~' denotes components such as software components, object-oriented software components, class components, and task components, and processes, functions, properties, and procedures. , subroutines, segments of program code, drivers, firmware, microcode, circuitry, data, databases, data structures, tables, arrays, and variables. The functions provided in the components and '~ units' may be combined into a smaller number of components and '~ units' or further separated into additional components and '~ units'. In addition, components and '~ units' may be implemented to play one or more CPUs in a device or secure multimedia card.

In describing the embodiments of the present invention in detail, an example of a specific system will be mainly targeted, but the main subject matter to be claimed in the present specification is to extend the scope disclosed herein to other communication systems and services having a similar technical background. It can be applied within a range that does not deviate significantly, and this will be possible at the discretion of a person with technical knowledge skilled in the art.

1 is a perspective view illustrating a focus ring of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

An embodiment of the present invention relates to a focus ring of a semiconductor manufacturing apparatus, and as an example, a focus ring of a semiconductor manufacturing apparatus capable of improving etching uniformity of a wafer is proposed.

In the case of forming a thin film on a silicon wafer or performing etching in semiconductor device manufacturing, an apparatus using plasma is widely used. Among such devices, in a plasma etching apparatus, a silicon wafer to be processed is placed on a lower electrode, a reaction gas is introduced from the upper electrode, and a high-frequency voltage is applied to both electrodes to generate a high-frequency plasma between both electrodes to generate a silicon wafer (Si wafer) can be etched.

In such a plasma apparatus, it is necessary to make the plasma supplied to the silicon wafer uniform. For this reason, as shown in Fig. 1, it has been conventionally practiced to arrange a focus ring 10 around the wafer to expand the plasma to the outside of the wafer and to improve the uniformity of the plasma on the wafer. Here, a silicon wafer is disposed in the inner region 15 of the focus ring 10 . The focus ring 10 is generally made of the same material as the silicon wafer, that is, silicon.

However, during dry etching using, for example, a fluorine-based gas, a portion in which a lot of isotropic etching occurs in the outer portion of the wafer may appear. The focus ring 10 lowers the concentration of fluorine radicals to solve the isotropic etching problem. The fact that the isotropic etching phenomenon is prominent at a specific point on the outer part of the wafer means that the focus ring 10 has a lower ability to partially lower the concentration of fluorine radicals. can be considered to be If the isotropic etching is prominent at a specific point on the outer edge of the wafer, the etching uniformity as a whole decreases, which is a major factor in reducing the yield.

2 is a side view illustrating a wafer edge etching apparatus according to an embodiment of the present invention.

Referring to FIG. 2 , the wafer edge etching apparatus 100 according to an embodiment of the present invention has a wafer support 130 on which a wafer (W) is mounted. This wafer support 130 serves as a ground electrode. A plasma headset 102 having a cylindrical shape is disposed above the wafer support 130 , in which an electrode support 120 for generating plasma by supplying a reactive gas is extended. The plasma headset 102 includes a housing 110 having a supply port 140 through which the reactive gas is supplied with a fluorine-based gas, such as CF ₄ or SF _{6 gas.} Here, the reaction gas may be a gas suitable for the etching process in addition to the above-mentioned fluorine-based gas (CF ₄ or SF _{6 gas).}

Figure 3a is a cross-sectional view showing the configuration of the housing in the wafer edge etching apparatus according to the embodiment of the present invention, Figure 3b is a bottom view showing the plasma headset in the wafer edge etching apparatus according to the embodiment of the present invention.

Referring to FIGS. 3A and 3B , an electrode 112 surrounded by an insulator 114 such as ceramic is disposed in the housing 110 . This electrode 112 is made of, for example, a metal to which a high voltage is applied. The metal electrode 112 has a shape suitable for being disposed in the circular housing 110 , for example, an overall annular shape. The diameter of the ring-shaped metal electrode 112 is preferably equal to or close to the diameter of the wafer W. When the diameter of the ring-shaped metal electrode 112 is equal to or close to the diameter of the wafer W, the plasma 190 generated under the metal electrode 112 is suitable for confining to the edge of the wafer W. Because.

The insulator 114 surrounding the ring-shaped metal electrode 112 also has a ring-shaped shape. A ring-shaped magnetic material 116 is also disposed further inside the ring-shaped metal electrode 112 . The magnetic material 116 is preferably a multipolar magnet in which N poles and S poles are alternately formed in the circumferential direction.

When the reactive gas flows into the housing 110 through the supply port 140 formed in the housing 110 and a voltage is applied to the metal electrode 114 , the reactive gas existing between the metal electrode 114 and the ground electrode 130 . becomes the plasma 190 . In addition, the plasma 190 is limitedly formed on the edge of the wafer W by the magnetic field of the magnetic material 116 . Accordingly, ions or neutral radicals in the plasma 190 collide with the edge portion of the wafer W to break the molecular bond of the thin film formed on the edge portion of the wafer W, and in this process, the wafer W The edge portion is etched. For example, _{when CF 4} gas is used as the reaction gas, the reaction gas CF ₄ gas is decomposed as shown in Formula 1 or Formula 2 below.

[Formula 1]

CF ₄ => CF ₃ + F

[Formula 2]

CF ₄ => CF ₂ + 2F

As shown in Formula 1 or 2, the CF ₄ gas is decomposed to generate neutral F radicals, and the neutral F radicals react with the thin film formed on the edge of the wafer W to change into a volatile compound, and the edge of the wafer W is etched. will become

4A is a plan view illustrating a limit of a plasma formation range according to a magnetic field in a wafer edge etching apparatus according to an embodiment of the present invention, and FIG. 4B is a wafer edge etching apparatus according to a magnetic field in the wafer edge etching apparatus according to an embodiment of the present invention. It is a cross-sectional view showing the limit of the formation range of plasma.

Referring to FIG. 4A , when the multipole magnet 116 is formed, a plurality of magnetic fields 118 of constant intensity are formed between each N pole and S pole. The movement direction of electrons or ions in the plasma 190 is directed to the outside of the wafer W by the magnetic field 118 . Accordingly, the plasma 190 is limited to the edge portion of the wafer W.

In other words, as shown in FIG. 4B , the tendency of electrons or ions 212 in the plasma 190 to penetrate into the wafer W and the tendency of electrons or ions 212 to penetrate into the wafer W according to the magnetic field 116 . W) the outward tendency to equilibrate to form the boundary line 400 . Only the thin film 302 formed at the edge of the thin film 300 formed on the wafer W is removed by preventing the plasma 190 from penetrating inside the boundary line 400 , that is, into the wafer W. In addition, since the plasma 190 does not penetrate into the boundary line 400 , the slope phenomenon of the thin film 300 does not appear. Meanwhile, the position of the boundary line 400 may be arbitrarily changed according to the strength of the magnetic field. Accordingly, the etching range of the thin film 300 can be arbitrarily set.

As described above, an embodiment of the present invention proposes a wafer edge etching apparatus for limiting plasma to a wafer edge portion using a magnetic field during wafer edge etching using plasma as one of the methods of etching the edge of the wafer.

A wafer edge etching apparatus according to an embodiment of the present invention that can implement the above features includes a housing, an annular first electrode disposed in the housing, and disposed in the housing to have a smaller diameter than that of the first electrode and a second electrode on which a wafer is placed, which is disposed outside the housing to face the first electrode so as to form a plasma between the first electrode and the annular magnetic material, wherein the plasma is the magnetic field of the magnetic material. It is characterized in that it is limited to the edge portion of the wafer by

In an embodiment of the present invention, the magnetic body includes a multipolar magnet in which N poles and S poles are alternately arranged in the circumferential direction. The multipolar magnet generates a magnetic field to inhibit the plasma from penetrating toward the center of the wafer.

In an embodiment of the present invention, a supply port for supplying a reaction gas necessary for generating the plasma is formed in the housing.

In an embodiment of the present invention, the second electrode is a ground electrode. The first electrode is a metal electrode to which a voltage is applied. The metal electrode is surrounded by an insulator.

A wafer edge etching apparatus according to a modified embodiment of the present invention that can implement the above features includes a cylindrical housing, a ring-shaped metal electrode disposed in the housing and applied with a voltage, surrounded by an insulator, and the metal electrode A ground electrode on which a wafer is placed, which is disposed on the outside of the lower side of the housing to face up and down so that plasma is formed between the metal electrode, and is disposed in the housing to have a smaller diameter than the metal electrode, so that the plasma is generated in the housing It is characterized in that it comprises an annular magnet for generating a magnetic field to inhibit penetration toward the center of the wafer.

In a modified embodiment of the present invention, the magnet is a multipolar magnet in which N poles and S poles are alternately arranged in the circumferential direction.

In a modified embodiment of the present invention, a supply port through which a reaction gas necessary for generating the plasma is supplied is formed in the housing.

According to the present invention, by directing electrons to the outside of the wafer using a magnetic field, plasma cannot penetrate into the wafer, so that the thin film formed on the edge of the wafer can be etched as much as desired. In addition, since it is possible to prevent the penetration of plasma into the wafer, it is possible to control and control the slope of the thin film.

In addition, the present invention relates to a focus ring and a substrate processing apparatus having the same, and more particularly, it proposes features related to a focus ring for discharging a material generated during an etching process and a substrate processing apparatus having the same.

In general, a semiconductor device includes a Fab process of forming an electrical circuit including electrical elements on a silicon wafer used as a semiconductor wafer, and an electrical characteristic (EDS) for examining electrical characteristics of the semiconductor devices formed in the fab process. die sorting) process, and a package assembly process for encapsulating and individualizing the semiconductor devices with an epoxy resin, respectively.

The fab process includes a deposition process for forming a film on a wafer, a chemical mechanical polishing process for planarizing the film, a photolithography process for forming a photoresist pattern on the film, and the photoresist pattern using the An etching process for forming a film into a pattern having electrical characteristics, an ion implantation process for implanting specific ions into a predetermined region of the wafer, a cleaning process for removing impurities on the wafer, inspection processes for inspecting the surface; and the like.

The etching process is a process for removing the exposed area of the photoresist pattern formed after the photo process on the wafer. Generally, it can be divided into dry etching and wet etching, and the degree of integration of semiconductor devices, etc. Accordingly, an isotropic etching showing an isotropic property or an anisotropic etching showing an anisotropic property is selectively used.

In general, in the dry etching process, an electric field is formed by applying high-frequency power to the upper and lower electrodes spaced apart by a predetermined distance in an enclosed interior space in which the etching process is performed, and the reaction gas supplied into the enclosed space is activated by the electric field. After making the plasma state, ions in the plasma state etch the wafer located on the lower electrode.

Here, plasma is required to be uniformly formed over the entire upper surface of the wafer, which is performed by a focus ring surrounding the edge of the chuck body over the lower electrode. The focus ring expands the region where the electric field is formed by applying high-frequency power formed on the top of the chuck body to the region where the wafer is located, so that the wafer is placed in the center of the region where the plasma is formed, so that the entire region is etched uniformly.

5A is a cross-sectional view illustrating a substrate processing apparatus according to an exemplary embodiment.

Referring to FIG. 5A , the conventional etching apparatus 10 includes an electrostatic chuck (ESC) for adsorbing and fixing the semiconductor substrate 11 by using an electrostatic force inside the chamber 12 for etching the surface of the semiconductor substrate 11 . Electrostatic Chuck) (20). The electrostatic chuck 20 is disposed on a substrate support part 22 , the substrate support part 22 has a cylindrical shape, and the electrostatic chuck 20 protrudes from an upper surface of the substrate support part to hold the semiconductor substrate. fixed support.

A focus ring 30 is provided on the outer periphery of the electrostatic chuck 20 to increase the area of the electrode in a circular ring shape. A ring fixing part 40 for fixing the focus ring 30 is provided on a lower surface of the focus ring 30 .

A gas supply unit 50 is provided on the upper surface of the chamber 12, a coil 61 disposed to surround a sidewall of the chamber, and a high frequency power supply unit 62 for applying a high frequency power to the coil. A portion 60 is provided. The reaction gas injected into the chamber is converted into a plasma state by high-frequency power. The reaction gas converted into a plasma state etches the semiconductor substrate 11 .

An outlet 71 is formed on the lower surface of the chamber, and the outlet is connected to an exhaust valve 72 and an exhaust pump 73 . The reaction material generated during the process is discharged to the outside of the chamber 12 through the exhaust port.

At this time, a predetermined portion of the focus ring 30 is also exposed by the plasma to be etched, and a reactive material such as a polymer is accumulated between the electrostatic chuck and the focus ring 30 , thereby reducing the function of the focus ring. There is a problem in that a process defect occurs by causing non-uniformity of the plasma.

In order to achieve the object of the present invention, a focus ring according to the present invention surrounds an edge of a substrate supported on an electrostatic chuck to focus a process gas onto the substrate, and a first focus ring and a second focus ring that are coupled to each other overlapping each other and a focus member having a focus ring and a spacer member disposed between the first focus ring and the second focus ring to form a discharge space of a product material generated from the focus member.

According to an embodiment of the present invention, a coupling groove may be formed in the first focus ring, and the spacer member may be inserted into the coupling groove. In this case, the spacer member may be integrally formed with the second focus ring.

In order to achieve another object of the present invention, a substrate processing apparatus according to the present invention includes a chamber provided with a process gas for etching a substrate, an electrostatic chuck provided in the chamber to support the substrate, and surrounding the edge of the substrate. Focusing the process gas onto the substrate, a focus member having a first focus ring and a second focus ring coupled to each other overlapping each other, and a focus member disposed between the first focus ring and the second focus ring from the focus member and a spacer defining a space for discharging the product material to be produced.

According to an embodiment of the present invention, the first and second focus rings may include silicon.

The focus ring according to the present invention configured as described above includes a focus member having a first focus ring and a second focus ring coupled to each other overlapping each other, and a spacer member disposed therebetween, so that the product material generated from the focus member is discharged. space can be formed. Thus, the etch rate of the entire substrate may be improved by discharging the material generated during the etching process through the discharge space.

5B is a cross-sectional view illustrating a substrate processing apparatus according to an exemplary embodiment.

6A and 6B are respectively a perspective view and a cross-sectional view illustrating a focus ring according to an embodiment of the present invention.

7 is a cross-sectional view illustrating a portion of a substrate processing apparatus according to an embodiment of the present invention.

5B to 7 , a substrate processing apparatus 500 according to an exemplary embodiment includes a chamber 200 , an electrostatic chuck 300 , and a focus ring 400 . An electrostatic chuck (ESC) 300 supporting a substrate 101 such as a semiconductor wafer is provided in the chamber 200 , and the electrostatic chuck 300 is disposed on the substrate support unit 350 .

The electrostatic chuck 300 includes a conductive member such as aluminum, and an internal electrode 310 is formed inside the electrostatic chuck 300 . The internal electrode is connected to an external DC power supply (not shown), and a DC voltage is applied so that the substrate 101 is electrostatically adsorbed onto the electrostatic chuck by electrostatic force.

A high frequency power supply unit 510 for applying bias power through a matching unit (not shown) is connected to the substrate support unit 350 . In addition, a lifting pin (not shown) for elevating the substrate is formed inside the substrate support part 350 , and the lifting pin lifts the substrate in order to move the substrate in and out by a transfer robot.

A coil 521 is provided on the outer side of the upper chamber and spirally surrounds the outer surface, and the coil is connected to a high-frequency power supply unit 520 for applying power for a source through a matching device (not shown). .

A gas supply pipe 610 for supplying a process gas for etching the substrate 101 in the chamber 200 is provided at an upper portion of the chamber. The gas supply pipe is connected to a gas shower head 640 having a plurality of gas diffusion holes 630 formed therein through a buffer chamber 620 , and is directed toward the substrate 101 mounted on the electrostatic chuck 300 . / or a preset process gas is injected. The gas supply pipe is connected to a gas supply unit 600 outside the chamber 200 , and the gas supply unit supplies a process gas to the chamber 200 . The gas supply unit 600 may be the same as the above-described gas supply unit 50 , may include the gas supply unit 50 , or may be different.

An outlet 710 is formed at the lower portion of the chamber, and the outlet 710 is connected to a vacuum pump 720 such as a dry pump. A product material such as a polymer generated during the etching process is discharged through the outlet 710 .

On the other hand, the present invention comprises the steps of disposing a bare wafer inside a chamber in which the plasma etching process is performed, the first cleaning of the inside of the chamber using plasma, and the first cleaning of the chamber with plasma. The method may include a second cleaning step using a plasma, a first etching step of the bare wafer using plasma, and a second etching step of the firstly etched bare wafer using a plasma.

In addition, the present invention does not open the chamber and perform wet cleaning for each part as in the prior art, but place the bare wafer in the chamber at regular intervals during the dry etching process and adjust the dry etching conditions to remove the accumulated film in the chamber and dry it again. It is possible to provide a method of controlling the interior of the chamber by etching conditions.

Therefore, the cleaning method according to the present invention does not completely stop and perform the dry etching process, but proceeds as a part of the etching process, thereby simplifying the entire process and reducing the time required for the device manufacturing process It is possible to extend the wet cleaning cycle for

First, a bare wafer W is placed on a chuck 300 in a vacuum chamber 200 of an Induced Coupled Plasma (ICP) equipment.

The cleaning process through the bare wafer proceeds through a certain cycle, and in the case of inductively coupled plasma equipment, it is recommended to perform the cleaning according to the present invention once after etching 24 wafers in consideration of the effect of the accumulation film on the process. may be desirable.

It is pumped by the vacuum pump 720 and the source power 520 is applied to 400 [W] to 1000 [W] in a state where the internal pressure of the chamber is 5 [mT] to 20 [mT], and the lower power ( The bottom power) 510 is supplied at 10 [W] ~ 70 [W] to apply a bias to the anode and the cathode. Next, 70 [sccm] ~ 130 [sccm] of CF ₄ gas and 5 [sccm] ~ 20 [sccm] of O ₂ gas is injected through the plasma gas supply unit 600, and about 5 [sec] ~ 20 [sec] ] Perform plasma etching.

This primary cleaning step is the first step to stabilize the unstable plasma device. The bias power is small, the pressure is relatively high, and the time is short.

Subsequently, as a secondary cleaning step, the pressure inside the chamber is set to 2 [mT] ~ 10 [mT], the source power 520 is increased to 1000 [W] ~ 2000 [W], and the lower power 510 is increased to 10 [W] ] ~ 70 [W] to increase the bias power. In the second cleaning stage, the equipment is cleaned in earnest. At this time, if the source power is small, the cleaning efficiency is reduced, and if the source power is too large, equipment damage is caused. Therefore, it is preferable to adjust it between about 1000 [W] and 2000 [W].

Next, as in the first cleaning step, plasma etching is performed by injecting 70 [sccm] ~ 130 [sccm] of CF ₄ gas and 5 [sccm] ~ 20 [sccm] of O ₂ gas, and the etching time is 200 [sec] ~ 300 [sec], greatly increased than the first washing step.

In the second cleaning step, etching occurs in all directions, and applying a bias power is to etch a thick accumulation film formed near the chuck 300 . At this time, the bare wafer W serves to prevent direct damage to the chuck 300 and the anode. In addition, since the gases used in the cleaning step are highly volatile and are not deposited after etching, they can be easily removed by pumping.

On the other hand, the execution time of the secondary etching process can be adjusted accordingly by detecting the wavelengths of the etched materials to determine the etching degree and residual degree of the corresponding material.

After the second cleaning is finished, the first and second etching steps are performed to eliminate the seasoning effect that causes changes in the process as the accumulated film is removed.

In the first etching step and the second etching step, the bare wafer W is etched to deposit a certain amount of accumulated film on the inner wall of the chamber 200 and the device inside the chamber, and the atmosphere in the chamber 200 is adjusted to the etching process. In this case, the accumulation film serves to protect the device. Therefore, unlike the previous cleaning step, the gases used have strong vapor deposition properties.

The primary etching is a preliminary etching, and the pressure inside the chamber 200 is 2 [mT] to 8 [mT], the source power 520 is 200 [W] to 800 [W], and the lower power 510 ) is 10 [W] to 60 [W], and _{10 [sccm] to 80 [sccm] of CF 4} gas having good deposition property is injected to perform plasma etching for about 20 [sec] to 60 [sec].

Subsequently, the pressure inside the chamber 200 is 2 [mT] to 8 [mT] by the secondary etching, the source power 520 is 300 [W] to 600 [W], and the lower power 510 is 50 [W] ~ 100 [W]. In order to etch the bare wafer W in earnest, the bias power is increased, and the etching time is also increased to about 50 [sec] ~ 100 [sec]. Since it is necessary to form a certain amount of accumulated film, HBr gas with strong deposition power is used, and 50 [sccm] ~ 100 [sccm] Cl ₂ gas, 100 [sccm] ~ 200 [sccm] HBr gas, and 5 [sccm] ~ It is preferable to inject 20 [sccm] of HeO _{2 gas.}

The substrate processing apparatus 100 according to the present invention includes a focus ring 400 surrounding an edge of a substrate 101 supported on an electrostatic chuck 300 to focus a process gas onto the substrate. In addition, a ring fixing part 430 for fixing the focus ring is provided on a lower surface of the focus ring 400 . Meanwhile, the substrate 101 may correspond to the wafer W.

When high-frequency power is applied by the high-frequency power supply units 510 and 520, an electric field is formed on the substrate 101, and the focus ring 400 further expands the electric field formation region to place the substrate at the center of the plasma region. position, so that the substrate is etched uniformly throughout.

In addition, the polymer compound generated during the etching process penetrates into the electrostatic chuck 300 and thus serves as a covering for protecting the edge of the electrostatic chuck 300 so as not to induce impurity particles on the substrate.

The focus ring 400 includes a focus member 410 and a spacer member 420 , and the focus member 410 includes a first focus ring 411 and a second focus ring 412 . The first focus ring 411 and the second focus ring 412 overlap and couple to each other.

The second focus ring 412 may be coupled to an upper portion of the first focus ring 411 , and the first focus ring 411 may have a larger cross-sectional area than the second focus ring 412 . For example, the first and second focus rings may have a circular ring shape and may include silicon.

A spacer 420 is disposed between the first focus ring 411 and the second focus ring 412 . An exhaust space 425 is formed between the first focus ring and the second focus ring by the spacer 420 .

According to an embodiment of the present invention, the spacer member 420 may be integrally formed with the second focus ring 412 . In this case, a coupling groove 421 is formed in the first focus ring 411 , and the spacer member 420 is inserted into the coupling groove 421 .

The coupling groove 421 and the spacer member 420 may be coupled by an interference fitting method. After positioning the second focus ring 412 on the first focus ring 411 , a predetermined force may be applied to couple the first and second focus rings to each other.

Also, the second focus ring 412 coupled to the upper portion of the first focus ring 411 may be separated from the first focus ring 411 again by applying a constant force in a direction opposite to the force.

While plasma is formed on the upper portion of the substrate 101 and the etching process is repeatedly performed, a product material such as a polymer generated during the etching process is generated between the substrate and the inside of the focus ring 400 . For example, the product material may be generated from the focus member 410 or from the substrate.

The product material is discharged to the outer periphery of the electrostatic chuck 300 through the discharge space 425 between the first focus ring and the second focus ring. The discharged product material is discharged to the outside of the chamber through an outlet 710 formed in the lower portion of the chamber 200 .

8A is a diagram illustrating a substrate processing system according to an embodiment of the present invention.

Referring to FIG. 8A , the substrate processing system 800 according to an embodiment of the present invention may include a substrate processing apparatus 500 , a server 810 , a terminal 820 , and an external server 830 .

The server 810 and/or the terminal 820 of the present invention may acquire and/or generate control information for system integration. Here, system integration (SI, system integration) refers to the integration of tangible products such as hardware, software, and network with intangible service technologies such as consulting, system design and maintenance according to the needs of users, and a synthesis that suits the computer and business environment of the client. It refers to a specialized information processing system business that provides computerized solutions.

In addition, the server 810 and/or the terminal 820 of the present invention may acquire and/or generate control information for network integration (NI).

The server 810 may be implemented using, for example, a web server program that is provided in various ways according to operating systems such as DOS, Windows, Linux, Unix, and Macintosh on general server hardware.

The terminal 820 is, for example, a smartphone, a mobile phone, a smart TV, a set-top box, a tablet PC, a digital camera, a camcorder, an e-book terminal, a digital broadcasting terminal, a personal digital assistant (PDA), It may include a portable multimedia player (PMP), a navigation system, an MP3 player, a wearable device, an air conditioner, a microwave oven, an audio system, a DVD player, and the like. Here, the personal computer may include a laptop computer, a desktop, and the like.

In addition, the server 810 and/or the terminal 820 acquires control information for the ICT module 200 based on IoT technology and/or ICT technology, or generates control information for the ICT module 200 . (generating), and may transmit and/or output control information for the ICT module 200 (transmitting) and/or outputting (outputting).

Here, IoT may represent the Internet of Things.

The Internet of Things (IoT) can mean a next-generation technology in which all things in the world are 'connected' through a network and communicate with each other. The fourth industrial revolution is to obtain big data through the Internet of Things, store it in the cloud, and analyze and utilize it with artificial intelligence. The Internet of Things (IoT) can become intelligent and create a smart world such as smart cars, smart homes, and smart cities.

For example, in a world where the Internet is connected to all fields, such as fully autonomous cars, smart homes, smart buildings, and health care services, the Internet may become like air, but there may be no need for a separate Internet. In order for the Internet of Things to be possible, it is not enough to have the Internet alone. Various basic technologies such as sensor and network technology, big data, cloud computing, artificial intelligence, and 3D printing must work together. In particular, the 4th industrial revolution shows the flow of big data obtained through the Internet of Things, stored in the cloud, and analyzed and utilized with artificial intelligence.

ICT can also represent Information and Communication Technology.

ICT (Information & Communication Technology) is a compound word of information technology (IT) and communication technology (CT). Any method of collecting, producing, processing, preserving, transmitting, or utilizing information. The change in ICT paradigm can be understood from the perspective of deepening interdependence between each sector in the content (C)-platform (P)-network (N)-device (D) value chain.

In general, the C-PN-T (terminal) value chain has been used a lot to describe the broadcasting platform, but considering the devices that actually correspond to computers, such as smartphones and tablets, the expression CPND may be more useful to describe ICT. . Looking at the content (C) section, it is necessary to recall that the distinction between photos, books, music, and videos is no longer meaningless on the Internet. All these types of content are provided to users by platform providers as they are digitized, and content owners provide content by partnering with platform providers such as Google, Apple, and Amazon or by forming their own platform. The platform sector can play an important role in the C-P-N-D value chain.

On the Internet, content may be accumulated, processed, stored, and provided by software. This means that ICT companies with software technology will take the lead. In particular, cloud service providers with software technology and cloud infrastructure are emerging as representative platform providers. In the process, the status of traditional network transport service providers may be relatively weakened. On the other hand, companies with original content will be able to establish an equal relationship with the platform provider. The network in the digital convergence era is the IP network, that is, the Internet. In traditional networks such as circuit-type telephone networks, network owners provide intelligent services such as user identification on their own, but in the case of the Internet, various service providers such as Akamai provide various network functions such as efficient traffic transmission and security through server clusters. offered in a competitive market.

In the sense that such an intelligent network service provider is also a kind of platform provider, it is actually difficult to distinguish between a platform and a network. It is also important that operators with communication networks directly provide platform services. The device sector is always connected to the Internet, and the software program inside the device with a universal operating system such as iOS is connected to the platform to complete the service. Apple is a representative example of both a platform provider and a device provider. Considering the partnership between Google and Android phone manufacturers, it can be seen that the relationship between the platform sector and the device sector is closer and more interdependent than in the past. The alliance between the content sector and the platform sector, the linkage with the device sector's platform, and the blurring of the boundary between the platform sector and the network sector can all mean deepening the interdependence of each C-P-N-D sector.

In addition, the server 810 and/or the terminal 820 according to an embodiment of the present invention may include a control unit, a communication unit, an input interface, an output interface, a storage unit, etc., and the terminal 820 is charged in an internal battery. It can be driven based on power.

The controller may directly/indirectly control the server 810 and/or the terminal 820 to implement an operation/step/process according to an embodiment of the present invention. In addition, the controller may include at least one processor, and the processor may include at least one central processing unit (CPU) and/or at least one graphics processing device (GPU).

Also, the controller may control overall operations of the server 810 and/or the terminal 820 . For example, by executing programs stored in the storage module of the server 810 , the controller may control the communication unit and the storage unit as a whole. For example, the control unit executes programs stored in the storage unit (eg, database) of the server 810 , thereby performing a part of the operation of the server 810 and/or the terminal 820 described with reference to FIGS. 8A and 8B . can be done

In addition, the control unit generates control information (eg, command), etc. based on API (Application Programming Interface), IoT (Internet of Things), IIoT (Industrial Internet of Things), and ICT (Information & Communication Technology) technology and/or and/or can manage

The communication unit may transmit/receive various data, signals, and information to and from the server 810 and/or the terminal 820 . In addition, the communication unit is a wireless communication module (eg, a cellular communication module, a short-range wireless communication module, or a global navigation satellite system (GNSS) communication module) or a wired communication module (eg, a local area network (LAN) communication module, or a power line communication module ) may be included.

The communication unit may also be a long-distance network, such as a first network (eg, Bluetooth, WiFi direct, or a short-range communication network such as IrDA (Infrared Data Association)) or a second network (eg, a cellular network, the Internet, or a computer network (eg, LAN or WAN)). communication network) with an external electronic device. These various types of communication modules may be integrated into one component (eg, a single chip) or may be implemented as a plurality of components (eg, multiple chips) separate from each other.

The input interface transmits commands or data to be used in components (eg, control unit, communication unit, storage unit, etc.) of the server 810 and/or the terminal 820 to the outside of the server 810 and/or the terminal 820 (eg: a first user, a second user, etc.), an administrator of the server 810, etc.).

In addition, the input interface may include a touch recognition capable display, a touch pad, a button type recognition module, a voice recognition sensor, a microphone, a mouse, or a keyboard installed in the server 810 and/or the ICT module 200 . Here, the touch recognition capable display, touch pad, and button type recognition module may recognize a touch through the user's body (eg, finger) through a pressure-sensitive and/or capacitive method.

Output interface server 810 and / or to display a signal (eg, voice signal), information, data, images, and / or various objects generated by the control unit of the terminal 820 or obtained through the communication unit (object), etc. It is a module. For example, the output module 340 may include a display, a screen, a displaying unit, a speaker, and/or a light emitting device (eg, an LED lamp).

The storage unit stores data such as a basic program, an application program, and setting information for the operation of the server 810 and/or the terminal 820 . In addition, the storage unit is a flash memory type (Flash Memory Type), a hard disk type (Hard Disk Type), a multimedia card micro type (Multimedia Card Micro Type), a card type memory (eg, SD or XD memory, etc.), magnetic Memory, magnetic disk, optical disk, RAM (Random Access Memory, RAM), SRAM (Static Random Access Memory), ROM (Read-Only Memory, ROM), PROM (Programmable Read-Only Memory), EEPROM (Electrically Erasable Programmable Read- Only Memory) may include at least one storage medium.

In addition, the storage unit may store personal information of a customer (a first user) who uses the server 810 and/or the terminal 820 , personal information of a manager (a second user), and the like. Here, the personal information represents a name, ID (identifier), password, street name address, phone number, mobile phone number, email address, and/or a reward (eg, points, etc.) generated by the server 810 . information may be included. In addition, the controller may perform various operations using various images, programs, contents, data, etc. stored in the storage unit.

8B is a diagram illustrating a method of operating a substrate processing system according to an embodiment of the present invention.

Meanwhile, the substrate processing apparatus 500 may further include a control device (not shown) and/or a communication device (not shown), and the control device includes control information for features implemented in the substrate processing apparatus 500 . (and/or instructions) and/or control features implemented in the substrate processing apparatus 500 . The substrate processing apparatus 500 may correspond to and/or include the substrate processing apparatus 100 described above.

Referring to FIGS. 8A and 8B , the method of operating a substrate processing system according to an embodiment of the present invention may include acquiring sensing information ( S10 ).

For example, at least one sensor included in the sensor unit 880 may be installed on one side of the chamber 200, in this case, the at least one sensor is an optical sensor (and/or camera), a temperature sensor, and a vibration It may include at least one of a detection sensor, a sound sensor, a microwave sensor, and an infrared sensor, and these sensors may be installed inside, one side, etc. of the chamber 200 .

For example, the sensor unit 880 and/or the server 810 may set a predetermined and/or preset monitoring period, and acquire sensor information acquired by the sensor unit 880 during the monitoring period. . For example, sensor information obtained by the sensor unit 880 may be transmitted to the server 810 , and for this purpose, the substrate processing apparatus 500 may further include a communication device and/or a transceiver.

For example, the sensor unit 880 and/or the server 810 may perform a first monitoring period and/or ceramic processing corresponding to a period in which a process for ceramic processing is in progress as a predetermined and/or preset monitoring period. After the process is completed, a corresponding second monitoring period can be set. Here, the process for ceramic processing may correspond to ceramic processing, substrate processing, substrate manufacturing, manufacturing of a focus ring, and the like described based on FIGS. 1 to 7 and FIGS. 9A to 14 . Also, the first monitoring period may include a 1-1 monitoring period, a 1-2 monitoring period, a 1-3 monitoring period, and/or a 1-4 monitoring period, which will be described later.

In addition, the sensor unit 880 and/or the server 810 sets the sensor information acquired during the first monitoring period as the first sensor information, and sets the sensor information acquired during the second monitoring period as the second sensor information. can Here, the first sensor information and the second sensor information may include various types of information acquired by an optical sensor (and/or camera), a temperature sensor, a vibration sensor, a sound sensor, a microwave sensor, and/or an infrared sensor.

Also, the operating method may include determining whether the sensing information satisfies a predetermined and/or preset criterion (S20).

For example, the sensor unit 880 and/or the server 810 determines whether a result of comparing the first sensing information and the second sensing information is the same and/or similar to a predetermined and/or preset criterion. It can be determined whether this is satisfied.

For example, the sensor unit 880 and/or the server 810 compares a value corresponding to the first sensing information and/or the second sensing information with a predetermined and/or preset reference value to obtain a predetermined and/or preset value. It may be determined whether the set criteria are satisfied.

Also, the operating method may include generating control information based on whether the sensing information satisfies a predetermined and/or preset criterion (S30).

For example, the server 810 may include the gas supply unit 600, the high frequency power supply units 510 and 520 and/or the internal pressure based on whether at least one of the above-described predetermined and/or preset criteria is satisfied. Control information (and/or commands) for controlling the operation of the controller 890 may be generated. The internal pressure control unit 890 may include means (and/or devices) for controlling the internal pressure of the chamber 600 .

In this case, the gas supply unit 600 may include means (and/or apparatus) for injecting gas into the chamber 200 . In this case, the chamber 200 may correspond to the aforementioned chamber 12 . The high frequency power supply units 510 and 520 may include means (and/or devices) for applying high frequency power to form an electric field on the substrate 101 . If the source power is small, the cleaning efficiency is lowered, and if the source power is too large, it may cause damage to the equipment, so it is preferable to adjust it between about 1000 [W] and 2000 [W].

For example, the server 810 is the type of gas supplied (and/or injected) from the gas supply unit 600, the strength of the gas (spray strength, injection strength), the injection amount of the gas (injection degree), Control information (and/or a command) indicating a gas injection period, a gas injection time, and the like may be generated. Here, the type of gas is a reactive gas converted into the above-described plasma state, a gas for etching the semiconductor substrate 11 , a fluorine-based gas, CF ₄ gas, O ₂ gas, HBr gas, Cl ₂ gas, HeO ₂ gas and the like. The unit of the gas injection amount (injection degree) may be [sccm] (sccm, Standard Cubic Centimeter per Minute). The unit of the gas spray period and/or the gas spray time may be [sec], [min], [hour], or the like. As an example, when the gas injection period (spray period, injection period) is _{set to T 1} and the gas injection time (spray time, injection time) is _{set to T 2} , the gas supply unit 600 may be configured as the chamber 200 . After the gas is injected for a time _{of T 2} within, when _{the time of T 1} passes, the gas may be (additionally) injected again for a time of T _{2 .}

Also, the operation method may include controlling the gas supply unit 600, the high frequency power supply units 510 and 520, and/or the internal pressure control unit 890 based on the control information (S40).

For example, the server 810 may provide control information (and/or commands) for controlling the operation of the gas supply unit 600 based on whether at least one of the above-described predetermined and/or preset criteria is satisfied. ) is generated and transmitted to the gas supply unit 600 so that the gas supply unit 600 operates based on the control information (and/or command).

In addition, the present invention may further include the following features.

For example, the control device (not shown) of the substrate processing apparatus 500 and/or the server 810 may perform a first cleaning step, a second cleaning step, a first etching step, and a second etching step in the chamber 200 . It is possible to generate control information (and/or instructions) for implementing the . In addition, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 control the first-first monitoring period corresponding to the first cleaning step and the second-first monitoring period corresponding to the second cleaning step. A monitoring period, a 1-3 monitoring period corresponding to the first etching step, and a 1-4 monitoring period corresponding to the second etching step may be set.

For example, in consideration of the similarity between the sensor information obtained by the optical sensor included in the sensor unit 880, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 includes the high frequency power supply unit ( Control information (and/or commands) for controlling the high frequency power applied by the 510 and 520 may be generated.

The sensor information obtained by the optical sensor includes first optical sensor information corresponding to the 1-1 monitoring period, second optical sensor information corresponding to the 1-2 monitoring period, and a second optical sensor information corresponding to the 1-3 monitoring period. 3 optical sensor information and/or fourth optical sensor information corresponding to the 1-4 monitoring period. For example, the control device (not shown) of the substrate processing apparatus 500 and/or the server 810 extracts an object (eg, an edge portion of a substrate/wafer, etc.) included in the first optical sensor information to produce Obtaining 1 object information, or extracting an object (eg, an edge portion of a substrate/wafer, etc.) included in the second optical sensor information to obtain second object information, or an object included in the third optical sensor information ( For example, by extracting an edge portion of a substrate/wafer, etc.) to obtain third object information, and/or extracting an object (eg, an edge portion of a substrate/wafer, etc.) included in the fourth optical sensor information to obtain a fourth Object information can be obtained. For example, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 may include a plurality of first optical sensor information, a plurality of fourth optical sensor information, and a plurality of first object information to a plurality of pieces of information. Fourth object information may be obtained, and these may be information corresponding to each of the plurality of substrates 101 and/or each of the plurality of wafers W generated/manufactured by the substrate processing apparatus 500 .

For example, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 may include a Histogram of Oriented Gradient (HOG), Haar-like feature, Co-occurrence HOG, LBP (local binary pattern), Through various algorithms for object feature extraction, such as FAST (features from accelerated segment test), the contour of an object in the image or the object can be extracted from the image (or first optical sensor information) acquired through the optical sensor Text (or outline (or outline) indicating information) can be obtained. In addition, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 recognizes (or identifies) an object in the acquired image (or first optical sensor information) through image analysis, and the Masking image information may be generated by masking an area corresponding to the recognized object. In this case, the masking process is, for example, a differential imaging method, a Model of Gaussian (MOG) algorithm using Gaussian Mixture Models (GMM), a codebook algorithm, etc. Object through background modeling for separating the object and the background The first to fourth object information may be extracted and/or obtained by using a method of extracting an object candidate region corresponding to .

For example, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 obtains the 1-1 optical reference information obtained by averaging and/or deriving an average value of a plurality of first optical sensor information. The second-second optical reference information obtained by obtaining, averaging the plurality of first object information and/or deriving an average value, and obtaining the second-second optical reference information obtained by averaging and/or deriving the average value of the plurality of second optical sensor information Acquire 1 optical reference information, obtain 2-2 optical reference information obtained by averaging and/or deriving an average value of a plurality of second object information, and obtain an average and/or average value of a plurality of third optical sensor information Obtaining the derived 3-1 optical reference information, averaging the plurality of third object information and/or obtaining the 3-2 optical reference information deriving the average value, and averaging the plurality of fourth optical sensor information and/or obtains 4-1 optical reference information from which an average value is derived, and/or obtains 4-2 optical reference information obtained by averaging and/or deriving an average value of a plurality of fourth object information.

For example, when the control device (not shown) of the substrate processing apparatus 500 and/or the server 810 determines the similarity between the new first optical sensor information and the 1-1 optical reference information, the predetermined first When different than the -1 reference ratio (when different), when the similarity between the new first object information and the 1-2 optical reference information is determined, when different than the predetermined 1-2 reference ratio (when different), When the similarity between the new second optical sensor information and the 2-1 optical reference information is different than the predetermined 2-1 reference ratio, the similarity between the new second object information and the 2-2 optical reference information When it is different from the predetermined 2-2 reference ratio, when the similarity between the new third optical sensor information and the 3-1 optical reference information is determined, it is different than the predetermined 3-1 reference ratio , when the similarity between the new third object information and the 3-2 optical reference information is different than the predetermined 3-2 reference ratio, between the new fourth optical sensor information and the 4-1 optical reference information When it is different from the predetermined 4-1 reference ratio when the similarity is determined, and/or when the similarity between the new first object information and the 4-2 optical reference information is determined, it is higher than the predetermined 4-2 reference ratio If there is a difference, it may be determined that the above-described predetermined and/or preset criteria are satisfied.

As described above, when it is determined that the predetermined and/or preset criteria are satisfied, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 are controlled by the high frequency power supply units 510 and 520 . Control information (and/or commands) for controlling (and/or resetting) the applied high-frequency power may be generated. In addition, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 determines the similarity between the new first optical sensor information and the 1-1 optical reference information, the new first object information and the 1-2 th The degree of similarity between the optical reference information, the degree of similarity between the new first optical sensor information and the 1-1 optical reference information, the degree of similarity between the new first object information and the second optical reference information, the new first optical sensor information and the second optical reference information The degree of similarity between the 1-1 optical reference information, the degree of similarity between the new first object information and the first-2 optical reference information, the degree of similarity between the new first optical sensor information and the 1-1 optical reference information, the new first object information and the high frequency power applied by the high frequency power supply units 510 and 520 may be determined based on the similarity between the first and second optical reference information. For example, the high frequency power may be set higher based on the average of the above similarities. There will be.

This is in consideration of the fact that, if the source power is small, cleaning efficiency of the substrate 101 (and/or the wafer W) decreases, and if the source power is too large, equipment may be damaged. That is, when the similarity is high, the high frequency power is set with emphasis on the cleaning effect, and when the similarity is low, it is necessary to lower the degree of damage, so it can be seen that the high frequency power is set lower.

In addition, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 controls (and/or resets) the high-frequency power applied by the high-frequency power supply units 510 and 520 , for example. Generate control information (and/or commands). In addition, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 determines the similarity between the new first optical sensor information and the 1-1 optical reference information, the new first object information and the 1-2 th The degree of similarity between the optical reference information, the degree of similarity between the new first optical sensor information and the 1-1 optical reference information, the degree of similarity between the new first object information and the second optical reference information, the new first optical sensor information and the second optical reference information The degree of similarity between the 1-1 optical reference information, the degree of similarity between the new first object information and the first-2 optical reference information, the degree of similarity between the new first optical sensor information and the 1-1 optical reference information, the new first object information and the high frequency power applied by the high frequency power supply units 510 and 520 may be determined based on the similarity between the first and second optical reference information. For example, the high frequency power may be set higher based on the average of the above similarities. There will be.

In addition, the present invention may further include the following features.

As described above, when it is determined that the predetermined and/or preset criteria are satisfied, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 controls the gas supply unit 600 and/or Control information (and/or commands) for controlling the operation of the internal pressure control unit 890 may be generated.

In addition, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 determines the similarity between the new first optical sensor information and the 1-1 optical reference information, the new first object information and the 1-2 th The degree of similarity between the optical reference information, the degree of similarity between the new first optical sensor information and the 1-1 optical reference information, the degree of similarity between the new first object information and the second optical reference information, the new first optical sensor information and the second optical reference information The degree of similarity between the 1-1 optical reference information, the degree of similarity between the new first object information and the first-2 optical reference information, the degree of similarity between the new first optical sensor information and the 1-1 optical reference information, the new first object information Control information (and/or commands) for the gas supply unit 600 may be determined based on the similarity between the first and second optical reference information, and for example, the gas supply unit 600 based on the average of the similarities described above. Control information indicating the type of gas supplied (and/or injected), the strength of the gas (spray strength, injection strength), the amount of gas injected (injection degree), the injection period of the gas, the injection time of the gas, etc. (and/or commands). For example, as the average of the above similarities is higher, the gas injection amount (injection degree) may be increased, the gas injection period may be shortened, and the gas injection time may be set to be longer. This is considering that a high degree of similarity means that the accuracy of the process is high to a certain extent, and a reduction in similarity to a certain extent may be acceptable as a larger amount of gas is injected and more gas is injected more frequently. On the other hand, the type of initial gas, the initial intensity of the gas (injection intensity), the initial injection amount of the gas (injection degree), the initial injection period of the gas, the initial injection time of the gas, etc. are i) a control device (not shown) and/or a server ( 810) and/or ii) may be input by the user through the terminal 820 directly/indirectly connected to the control device (not shown) and/or the server 810.

In addition, the control device (not shown) and/or the server 810 of the substrate processing apparatus 500 determines the similarity between the new first optical sensor information and the 1-1 optical reference information, the new first object information and the 1-2 th The degree of similarity between the optical reference information, the degree of similarity between the new first optical sensor information and the 1-1 optical reference information, the degree of similarity between the new first object information and the second optical reference information, the new first optical sensor information and the second optical reference information The degree of similarity between the 1-1 optical reference information, the degree of similarity between the new first object information and the first-2 optical reference information, the degree of similarity between the new first optical sensor information and the 1-1 optical reference information, the new first object information Control information (and/or commands) for the internal pressure control unit 890 may be determined based on the degree of similarity between the first and second optical reference information, for example, the chamber 600 based on the average of the similarities described above. It may be possible to establish a (target) internal pressure of the chamber 600 and/or establish a means (and/or device) for controlling the (target) internal pressure of the chamber 600 . Here, the target internal pressure may indicate a target and/or arbitrarily set internal pressure of the chamber 600 under the control of the internal pressure controller 890 . Meanwhile, the initial (target) internal pressure may be input by the user through the terminal 820 directly/indirectly connected to the control device (not shown) and/or the server 810 .

9A and 9B , the method for manufacturing a ceramic substrate according to an embodiment of the present invention includes preparing a base substrate 1120 ( S600 ), and printing copper paste on the base substrate 1120 to form a bonding layer 1140 . and forming a metal layer 1160 on one surface of the bonding layer 1140 ( S800 ).

In the step of preparing the base substrate 1120 ( S600 ), the base substrate 1120 made of a ceramic material is prepared. In this case, in the step of preparing the base substrate 1120 ( S600 ), the base substrate 1120 having a thickness of about 0.15 mm or more is prepared.

In the step of preparing the base substrate 1120 ( S600 ), a ceramic substrate (ie, a green sheet) formed of one of _{alumina, Zirconia Toughened Alumina (ZTA), AlN and Si3N 4 is used as the base substrate 1120 .} Prepare.

At this time, the step of preparing the base substrate 1120 ( S600 ) is to prepare a ceramic substrate including at least one _{of alumina, Zirconia Toughened Alumina (ZTA), AlN and Si 3} N _{4 as the base substrate 1120 .} may be

10A and 10B, the step of preparing the base substrate 1120 (S600) is the step of forming a via hole 1122 in the base substrate 1120 (S620) and filling the via hole 1122 with a conductive material. It may include step S640.

In the step of forming the via hole 1122 ( S620 ), a via hole 1122 penetrating the base substrate 1120 is formed. In this case, in the step of forming the via hole 1122 ( S620 ), a plurality of via holes 1122 penetrating the base substrate 1120 may be formed.

In the step of filling the via hole 1122 with a conductive material ( S640 ), a conductive material, which is one of copper, tungsten, and silver, is filled in the via hole 1122 . In the step of filling the via hole 1122 with a conductive material ( S640 ), a conductive material that is an alloy including at least one of copper, tungsten, and silver may be filled in the via hole 1122 . Through this, in the step of filling the via hole 1122 with a conductive material ( S640 ), a connection metal layer 1124 connecting the metal layers 1160 formed on the upper and lower surfaces of the base substrate 1120 , respectively, is formed.

In this case, in the step of filling the via hole 1122 with a conductive material ( S640 ), the via hole 1122 may be filled by printing a conductive paste. In the step of filling the via hole 1122 with a conductive material ( S640 ), a slug-type conductor corresponding to the shape of the via hole 1122 may be inserted into the via hole 1122 to fill the via hole 1122 .

In the step of forming the bonding layer 1140 ( S700 ), the bonding layer 1140 is formed on at least one surface of the base substrate 1120 by printing copper paste. In this case, in the step of forming the bonding layer 1140 ( S700 ), the bonding layer 1140 having a thickness of about 5 μm or more and 50 μm or less is formed. Before the forming of the bonding layer 1140 ( S800 ), a degreasing process may be performed before printing the copper paste for smooth bonding of the base substrate 1120 and the bonding layer 1140 .

In the step of forming the bonding layer 1140 ( S700 ), the bonding layer 1140 is formed by printing a copper paste mixed with copper powder and a binder on the base substrate 1120 . In this case, the binder includes at least one of a ceramic metal oxide, Glass Frit, and an organic solvent. Here, when the sum of components of copper powder, ceramic metal oxide, glass frit and organic solvent is 100%, copper powder is 80% or more and 85% or less, ceramic metal oxide is 1% or more and 5% or less, and Glass Frit is 1% 5% or more, and the organic solvent may be 5% or more and 18% or less.

In the step of forming the metal layer 1160 ( S800 ), the metal layer 1160 is formed on one surface of the bonding layer 1140 . In this case, in the step of forming the metal layer 1160 ( S800 ), a metal foil is laminated on the bonding layer 1140 and then bonded through heat treatment. In the step of forming the metal layer 1160 ( S800 ), heat treatment is performed by applying high temperature and high pressure in an atmosphere or vacuum to prevent oxidation of the metal layer 1160 during heat treatment. In this case, in the step of forming the metal layer 1160 ( S800 ) _{, an inert gas such as N 2} , H ₂ and Ar may be used to form an atmosphere.

이상 900

이하의 온도로 가열 가압함에 따라 접착층을 구성하는 구리 페이스트에 포함된 무기질 바인더(즉, 세라믹 금속화합물 및 Class Frit) 및 확산 접합에 의해 금속층(1160)을 베이스 기재(1120)에 접합한다.Here, the step of forming the metal layer 1160 ( S800 ) is about 800 in a state in which the metal foil is laminated on the bonding layer 1140 .

more than 900

The metal layer 1160 is bonded to the base substrate 1120 by diffusion bonding and an inorganic binder (ie, ceramic metal compound and Class Frit) contained in the copper paste constituting the adhesive layer by heating and pressing at a temperature below.

In the step of forming the metal layer 1160 ( S800 ), the metal layer 1160 is formed by bonding a metal foil, which is a conductive metal such as copper or aluminum, to the bonding layer 1140 . In the step of forming the metal layer 1160 ( S800 ), the metal layer 1160 may be formed by bonding a conductive metal such as an alloy containing copper or a clad containing copper to the bonding layer 1140 . In this case, in the step of forming the metal layer 1160 ( S800 ), the metal layer 1160 is formed to a thickness of about 0.1 mm or more.

11A and 11B , the method of manufacturing a ceramic substrate according to an embodiment of the present invention may further include forming another metal layer 1180 on one surface of the metal layer 1160 ( S900 ).

In this case, in the step of forming the other metal layer 1180 ( S900 ), another metal layer 1180 having a different composition or a different thickness from that of the metal layer 1160 is formed on the metal layer 1160 . In the step of forming the other metal layer 1180 ( S900 ), another metal layer 1180 having a composition and thickness different from that of the metal layer 1160 may be formed on the metal layer 1160 . Here, in the step of forming the other metal layer 1180 ( S900 ), another bonding layer (not shown) may be formed between the metal layer 1160 and the other metal layer 1180 .

In the above, the method of manufacturing the ceramic substrate in which the metal layer 1160 is formed on at least one surface of the base substrate 1120 has been described as an example, but the present invention is not limited thereto. Various types of ceramic substrates may be formed, such as one ceramic substrate, a ceramic substrate in which a plurality of unit substrates having a metal layer 1160 formed on at least one surface of the base substrate 1120 are bonded to each other. At this time, it is preferable to form the bonding layer 1140 between the base substrate 1120 and the ceramic substrate through the above-described step of forming the bonding layer 1140 ( S700 ) to bond the base substrate 1120 and the ceramic substrate. .

Referring to FIG. 12A , a ceramic substrate according to an embodiment of the present invention includes a base substrate 1120 , a bonding layer 1140 , and a metal layer 1160 . Hereinafter, a method of manufacturing a ceramic substrate in which the metal layer 1160 is formed on at least one surface of the base substrate 1120 has been described as an example, but the present invention is not limited thereto. Various types of ceramic substrates may be formed, such as one ceramic substrate, a ceramic substrate in which a plurality of unit substrates having a metal layer 1160 formed on at least one surface of the base substrate 1120 are bonded to each other. In this case, it is preferable to form a bonding layer 1140 between the base substrate 1120 and the ceramic substrate to bond the base substrate 1120 and the ceramic substrate.

The base substrate 1120 is formed of a ceramic material. At this time, the base substrate 1120 is formed to a thickness of about 0.15 mm or more.

The base substrate 1120 is formed by firing a ceramic green sheet made of any one of alumina, Zirconia Toughened Alumina (ZTA), AlN, and Si ₃ N _{4 .} The base substrate 1120 may be formed by firing a ceramic green sheet including at least one of alumina, ZTA, AlN, and Si ₃ N _{4 .}

Referring to FIG. 12B , a via hole 1122 is formed in the base substrate 1120 . The via hole 1122 is formed to penetrate the base substrate 1120 . A plurality of via holes 1122 may be formed in the base substrate 1120 .

A connection metal layer 1124 formed by filling the via hole 1122 with a conductive material is formed. In this case, the connection metal layer 1124 may be made of one of copper, tungsten, and silver as an example. The connection metal layer 1124 may be an alloy including at least one of copper, tungsten, and silver.

The connection metal layer 1124 may be formed by filling the via hole 1122 by printing a conductive paste or by inserting a slug-type conductor corresponding to the shape of the via hole 1122 into the via hole 1122 .

The bonding layer 1140 is formed on at least one surface of the base substrate 1120 . The bonding layer 1140 is formed by applying a copper paste to the base substrate 1120 by printing. In this case, the bonding layer 1140 may be formed to a thickness of about 5 μm or more and 50 μm or less.

The bonding layer 1140 may be a copper paste in which copper powder, ceramic metal oxide, glass frit, and an organic solvent are mixed. At this time, when the sum of components of copper powder, ceramic metal oxide, glass frit and organic solvent is 100%, copper powder is 80% or more and 85% or less, ceramic metal oxide is 1% or more and 5% or less, and Glass Frit is 1% 5% or more, and the organic solvent may be 5% or more and 18% or less.

이상 900

이하의 온도로 가열 가압함에 따라, 접착층을 구성하는 구리 페이스트에 포함된 무기질 바인더(즉, 세라믹 금속화합물 및 Class Frit)에 의한 접합 및 확산 접합에 의해 금속층(1160)이 베이스 기재(1120)에 접합된다.The metal layer 1160 is formed on one surface of the bonding layer 1140 . The metal layer 1160 is formed through heat treatment after laminating a metal foil on the bonding layer 1140 . That is, as the metal foil is laminated on the bonding layer 1140 and heat treatment is performed, the metal layer 1160 is bonded to the base substrate 1120 by the bonding layer 1140 . Here, in a state in which the metal foil is laminated on the bonding layer 1140, approximately 800

more than 900

The metal layer 1160 is bonded to the base substrate 1120 by bonding and diffusion bonding using the inorganic binder (ie, ceramic metal compound and Class Frit) included in the copper paste constituting the adhesive layer by heating and pressing at a temperature below. do.

The metal layer 1160 may be a conductive metal foil formed of one of copper and aluminum. The metal layer 1160 may be an alloy including copper or a clad including copper. At this time, the metal layer 1160 is formed to a thickness of about 0.1 mm or more.

Referring to FIG. 13 , the ceramic substrate has a thickness of about 635 (±64) μm, a density of about 3.95 (g/cm 3 ), and a thermal conductivity of about 18 to 25 (W/(m·K)). The thickness of the upper and lower surfaces of the base substrate 1120 is about 30 (±10) μm, the density is about 7.6 to 8.9 (g/cm 3 ), and the thermal conductivity is about 401 (W/(m·K)) A phosphorus bonding layer 1140 is formed. On one surface of each bonding layer 1140, the thickness is about 300 (± 30) μm, the density is about 8.96 (g/cm 3 ), and the thermal conductivity is about 401 (W/(m K)) of a metal layer ( 1160) is formed.

Through this, the ceramic substrate may minimize the heterojunction resistance by alleviating the difference in thermal conductivity (or coefficient of thermal expansion) between the metal layer 1160 and the base substrate 1120 by the bonding layer 1140 .

Referring to FIG. 14 , the ceramic substrate according to an embodiment of the present invention may further include another metal layer 1180 laminated on one surface of the metal layer 1160 .

The other metal layer 1180 is formed to have a different composition or a different thickness from that of the metal layer 1160 . The other metal layer 1180 may be formed to have a composition and thickness different from that of the metal layer 1160 . Here, in FIG. 14 , the metal layer 1160 and the other metal layer 1180 are directly bonded to each other, but another bonding layer (not shown) is interposed between the metal layer 1160 and the other metal layer 1180 so that the metal layer 1160 and the metal layer 1160 are directly bonded to each other. Another metal layer 1180 may be bonded.

Embodiments of the present invention disclosed in the present specification and drawings are merely provided for specific examples in order to easily explain the technical contents of the present invention and help the understanding of the present invention, and are not intended to limit the scope of the present invention. That is, it will be apparent to those of ordinary skill in the art to which the present invention pertains that other modifications are possible based on the technical spirit of the present invention. In addition, each of the above embodiments may be operated in combination with each other as needed. For example, all embodiments of the present invention may be implemented by the system 800 , the server 810 , the terminal 820 , and the like in parts in combination with each other.

In addition, the method for controlling the system 800, the server 810, the terminal 820, etc. according to the present invention may be implemented in the form of a program command that can be executed through various computer means and recorded in a computer-readable medium. .

As such, various embodiments of the present invention may be embodied as computer readable code on a computer readable recording medium in a particular aspect. A computer readable recording medium is any data storage device capable of storing data that can be read by a computer system. Examples of computer readable recording media include read only memory (ROM), random access memory (RAM), and compact disk-read only memory (CD-ROM). ), magnetic tapes, floppy disks, optical data storage devices, and carrier waves (such as data transmission over the Internet). The computer readable recording medium may also be distributed over network-connected computer systems, so that the computer readable code is stored and executed in a distributed manner. In addition, functional programs, codes, and code segments for achieving various embodiments of the present invention may be easily interpreted by programmers skilled in the field to which the present invention is applied.

In addition, it will be appreciated that the user terminal and method according to various embodiments of the present invention can be realized in the form of hardware, software, or a combination of hardware and software. Such software may contain, for example, a volatile or non-volatile storage device, such as a ROM, or a memory, such as, for example, RAM, a memory chip, device or integrated circuit, whether erasable or rewritable, or For example, the storage medium may be stored in an optically or magnetically recordable storage medium such as a compact disk (CD), DVD, magnetic disk or magnetic tape, and at the same time, a machine (eg, computer) readable storage medium. The method according to various embodiments of the present invention may be implemented by a computer or a portable terminal including a control unit (control module 310) and a memory, the memory including instructions for implementing the embodiments of the present invention It will be appreciated that it is an example of a machine-readable storage medium suitable for storing a program or programs.

Accordingly, the present invention includes a program including code for implementing the apparatus or method described in the claims of the present specification, and a machine (computer, etc.) readable storage medium storing such a program. Further, such a program may be transmitted electronically over any medium, such as a communication signal transmitted over a wired or wireless connection, and the present invention suitably includes the equivalent thereof.

The embodiments of the present invention disclosed in the present specification and drawings are merely provided for specific examples to easily explain the technical contents of the present invention and help the understanding of the present invention, and are not intended to limit the scope of the present invention. In addition, the embodiments according to the present invention described above are merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent ranges of embodiments are possible therefrom. Accordingly, the true technical protection scope of the present invention should be defined by the following claims.

Claims (5)

A system for processing a substrate, comprising:
substrate processing apparatus; including,
The substrate processing apparatus,
a chamber for etching the substrate;
a gas supply unit for supplying a process gas into the chamber;
a high-frequency power supply;
an electrostatic chuck provided in the chamber to support the substrate;
a focus member surrounding an edge of the substrate to focus the process gas onto the substrate, the focus member having a first focus ring and a second focus ring coupled to each other to overlap each other;
a spacer member disposed between the first focus ring and the second focus ring to form a discharge space of a product generated from the focus member;
It includes a sensor unit including an optical sensor for photographing the edge of the substrate,
A coupling groove is formed in the first focus ring;
The spacer member is: ⓐ inserted into the coupling groove, ⓑ integrally formed with the second focus ring;
The system is:
a server generating control information to control the gas supply unit and the high frequency power supply unit; and
a terminal for obtaining the control information from the server and displaying it through an output interface; further comprising,
The server is:
A command for implementing the first cleaning step, the second cleaning step, the first etching step, and the second etching step is generated in the chamber, wherein the first cleaning step is performed in a state where the pressure inside the chamber is the first pressure. The second cleaning step is implemented in a state where the pressure inside the chamber is a second pressure that is lower than the first pressure, and the first etching step and the second etching step are performed after the second cleaning step is implemented in
A first monitoring period corresponding to the first washing step is set, a second monitoring period corresponding to the second washing step is set, a third monitoring period corresponding to the first etching step is set, and the second setting a fourth monitoring period corresponding to the secondary etching step;
First optical sensor information obtained through the optical sensor in the first monitoring period, second optical sensor information obtained through the optical sensor in the second monitoring period, and obtained through the optical sensor in the third monitoring period receiving the third optical sensor information, and the fourth optical sensor information obtained through the optical sensor in the fourth monitoring period, from the optical sensor,
Using an object feature extraction algorithm based on at least one of Histogram of Oriented Gradient (HOG), Haar-like feature, Co-occurrence HOG, LBP (local binary pattern), or FAST (features from accelerated segment test): Extracting first object information corresponding to the edge of the substrate from 1 optical sensor information, extracting second object information corresponding to the edge of the substrate from the second optical sensor information, and extracting the second object information corresponding to the edge of the substrate from the third optical sensor information extracting third object information corresponding to the edge of the substrate, and extracting fourth object information corresponding to the edge of the substrate from the fourth optical sensor information;
While the degree of difference between the first object information and the first optical reference information set based on the plurality of previously extracted first optical sensor information is higher than the first reference ratio, the second object information and the previously extracted The degree of difference between the second optical reference information set based on the plurality of second optical sensor information is higher than the second reference ratio, and based on the third object information and the previously extracted plurality of third optical sensor information While the degree of difference between the third optical reference information set by Generates a command for resetting the high frequency power applied to the high frequency power supply unit only when the degree of difference is higher than the fourth reference ratio,
The reset value of the high frequency power may include a degree of similarity between the first object information and the first optical reference information, a degree of similarity between the second object information and the second optical reference information, and the third object information and the third Characterized in that the higher the average of the similarity between the optical reference information and the similarity between the fourth object information and the fourth optical reference information, the higher is determined.
A system for processing substrates. delete delete delete delete

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