CN104465629A - Passive device structure and forming method thereof - Google Patents
Passive device structure and forming method thereof Download PDFInfo
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- CN104465629A CN104465629A CN201310438676.4A CN201310438676A CN104465629A CN 104465629 A CN104465629 A CN 104465629A CN 201310438676 A CN201310438676 A CN 201310438676A CN 104465629 A CN104465629 A CN 104465629A
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Abstract
The invention provides a passive device structure and a forming method thereof. An electric charge absorption layer is formed on the surface of a capacitor structure, is tightly attached to connecting wires, and can absorb electric charges. When subsequent processes are carried out, the generated electric charges can all be guided out through the electric charge absorption layer, are prevented from being accumulated in the capacitor structure, so that the capacitor structure can be protected against damage, and the performance of the passive device can be further improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of passive device structure and forming method thereof.
Background technology
In the art of semiconductor manufacturing, in order to improve integrated level, usually by multiple passive device integration in same structure, form passive device structure.Described passive device structure generally includes resistance, inductance and electric capacity etc.
Please refer to Fig. 1, Fig. 1 is the generalized section of passive device structure in prior art, described passive device structure comprises: front Rotating fields 10, the first metal layer 22, second metal level 50, capacitance structure, connecting line 30, interlayer dielectric layer 40 and passivation layer 60, wherein, the first metal layer 22 is formed at the surface of described front Rotating fields 10, in order to better have better contact with described front layer 10 with the connecting line of follow-up formation, the upper and lower surface of described the first metal layer 22 is all formed with barrier layer 21; Described capacitance structure comprises bottom crown 23, top crown 25 and dielectric layer 24, and described dielectric layer 24 is formed between described top crown 25 and bottom crown 23; Same, in order to bottom crown 23 has better contact with described front layer 10 with the connecting line of follow-up formation, lower surface and the upper surface of described bottom crown 23 are all formed with barrier layer 21; That is described dielectric layer 24 is formed at the surface of described barrier layer 21; Described top crown 25 is directly formed at the surface of described dielectric layer 24, in order to make top crown 25 can have better contact with the connecting line of follow-up formation, is therefore formed with barrier layer 21 at the upper surface of described top crown 25; The surface barrier 21 of described top crown 25, bottom crown 23 and the first metal layer 22 is all formed with connecting line 30; The two side of same described connecting line 30 is also formed with barrier layer 21; Be formed with the second metal level 50 at the upper surface of connecting line 30, same, the upper and lower surface of described second metal level 50 is all formed with barrier layer 21; Described interlayer dielectric layer 40 is formed between described capacitance structure, the first metal layer 22, connecting line 30 and the second metal level 50, plays a part to isolate different components; Described interlayer dielectric layer 40 surrounds described second metal level 50, follow-up at described interlayer dielectric layer 40 surface formation passivation layer 60, plays a part to protect whole passive device structure.
Wherein, what described interlayer dielectric layer 40 all adopted is high density plasma enhanced chemical vapor deposition technique, form connecting line 30 to need to adopt etching technics, as everyone knows, above-mentioned technique can produce a large amount of electric charges, electric charge can conduct to top crown 25 and bottom crown 23 surface of described capacitance structure via connecting line 30, therefore the electricity slurry property introduced infringement (Plasma Induce Defect is very easily formed, PID), when a large amount of charge concentration is on capacitance structure top crown 25 and bottom crown 23 surface, add that the thickness of described dielectric layer 24 is generally 330 dusts thinner, so just described dielectric layer 24 is very easily caused to burn, thus can capacitance structure be damaged, whole passive device structure is damaged.
Summary of the invention
The object of the present invention is to provide a kind of passive device structure and forming method thereof, capacitance structure can be avoided to suffer the infringement of the electricity slurry property introduced.
To achieve these goals, the present invention proposes a kind of passive device structure, comprising:
Front layer, capacitance structure, connecting line and interlayer dielectric layer; Wherein, described capacitance structure is formed at the surface of described front layer, described capacitance structure surface is formed with charge adsorption layer, described connecting line is electrically connected with described capacitance structure, the sidewall of described charge adsorption layer and described connecting line is close to, interlayer dielectric layer is formed at the surface of described front layer and charge adsorption layer, and isolates described connecting line.
Further, in described passive device structure, described capacitance structure comprises bottom crown, top crown and dielectric layer, and described dielectric layer is formed between described top crown and bottom crown, and described connecting line is electrically connected with described bottom crown and top crown respectively.
Further, in described passive device structure, the material of described dielectric layer is silicon nitride or silica.
Further, in described passive device structure, the material of described top crown, bottom crown and connecting line is aluminium.
Further, in described passive device structure, described passive device structure also comprises the first metal dish, silicon oxynitride layer, the second metal dish and passivation layer; Wherein, described first metal pan-like is formed in the surface of described front layer, described connecting line is electrically connected with described first metal dish, described first metal dish and described capacitance structure are kept apart by interlayer dielectric layer, described silicon oxynitride layer is formed at the surface of described charge adsorption layer, described second metal pan-like is formed in the surface of described connecting line, and kept apart by described interlayer dielectric layer between described second metal dish, described passivation layer is formed at the surface of described interlayer dielectric layer.
Further, in described passive device structure, the material of described first metal dish and the second metal dish is aluminium.
Further, in described passive device structure, the scope of the extinction coefficient of described silicon oxynitride layer is 0.55 ~ 0.75.
Further, in described passive device structure, the material of described passivation layer is the mixture of silicon oxynitride and silicon nitride.
Further, in described passive device structure, the surface that described bottom crown, top crown, the first metal dish and the second metal dish are connected with described connecting line is all formed with barrier layer, the surface that described bottom crown is connected with described front layer with the first metal dish is formed with barrier layer, and the two side of described connecting line is all formed with barrier layer.
Further, in described passive device structure, the material of described barrier layer is the mixture of Ti and TiN.
Further, in described passive device structure, the surface of described first metal dish is formed with charge adsorption layer and silicon oxynitride layer, and the sidewall of described charge adsorption layer and silicon oxynitride layer and described connecting line is close to.
Further, in described passive device structure, the material of described charge adsorption layer is silicon-rich silicon oxy-nitride.
Further, in described passive device structure, the thickness range of described charge adsorption layer is 300 dust ~ 700 dusts.
Further, in described passive device structure, the scope of the extinction coefficient of described charge adsorption layer is 1.4 ~ 1.8.
Further, the present invention also proposes a kind of formation method of passive device structure, and for the formation of any one passive device structure as described above, described method comprises step:
Front layer is provided;
Bottom crown layer, dielectric layer and top crown layer is formed successively in described front layer surface;
Etched portions top crown layer, form top crown, etching stopping is in dielectric layer;
Charge adsorption layer is formed on the surface of described top crown and dielectric layer;
Etching charge adsorption layer, dielectric layer and bottom crown layer, expose part front layer successively, and form bottom crown and the first metal dish;
The first interlayer dielectric layer is formed on the surface of described charge adsorption layer and front layer;
Etch described first interlayer dielectric layer, formed and connect string holes, described connection string holes exposes part top crown, bottom crown and the first metal dish successively;
Connecting line is formed in described connection string holes.
Further, in the formation method of described passive device structure, after formation connecting line, form the second metal dish on the surface of described connecting line.
Further, in the formation method of described passive device structure, after formation second metal dish, between described second metallic disc surface and ground floor, dielectric layer surface forms the second interlayer dielectric layer.
Further, in the formation method of described passive device structure, after formation second interlayer dielectric layer, form passivation layer on the surface of described second interlayer dielectric layer.
Further, in the formation method of described passive device structure, the surface be connected with described connecting line at described bottom crown, top crown, the first metal dish, the second metal dish respectively forms barrier layer, the surface be connected with described front layer at described bottom crown, the first metal dish forms barrier layer, forms barrier layer in the two side of described connecting line.
Further, in the formation method of described passive device structure, before etching charge adsorption layer, dielectric layer and bottom crown layer, form silicon oxynitride layer on the surface of described charge adsorption layer.
Compared with prior art; beneficial effect of the present invention is mainly reflected in; charge adsorption layer is formed on the surface of capacitance structure; described charge adsorption layer is close to connecting line, and described charge adsorption layer can adsorption charge, when carrying out subsequent technique; electric charge all can be derived by charge adsorption layer by the electric charge produced; avoid charge accumulation in described capacitance structure, thus capacitance structure can be protected not to be damaged, and then the performance of passive device can be improved.
Accompanying drawing explanation
Fig. 1 is the generalized section of passive device structure in prior art;
Fig. 2 is the flow chart of passive device structure formation method in one embodiment of the invention;
Fig. 3 ~ Fig. 9 is the structural profile schematic diagram formed in one embodiment of the invention in passive device structure process.
Embodiment
Below in conjunction with schematic diagram, passive device structure of the present invention and forming method thereof is described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 8, in the present embodiment, propose a kind of passive device structure, comprising: front layer 100, capacitance structure, connecting line 500, interlayer dielectric layer, the first metal dish 221, second metal dish 600 and passivation layer 700;
Wherein, described capacitance structure is formed at the surface of described front layer 100, described capacitance structure comprises bottom crown 222, top crown 241 and dielectric layer 230, described dielectric layer 230 is formed between described top crown 241 and bottom crown 222, described connecting line 500 is electrically connected with described bottom crown 222 and top crown 241 respectively, wherein, the material of described dielectric layer 230 is silicon nitride or silica, and the material of described top crown 241, bottom crown 222 and connecting line 500 is aluminium.
Charge adsorption layer 300 is formed on the surface of described capacitance structure, described connecting line 500 is electrically connected with described capacitance structure, described charge adsorption layer 300 is close to the sidewall of described connecting line 500, for the electric charge that conducting subsequent technique produces, wherein, the material of described charge adsorption layer 300 is silicon-rich silicon oxy-nitride, its thickness range is 300 dust ~ 700 dusts, such as 500 dusts, the scope of the extinction coefficient of described charge adsorption layer 300 is 1.4 ~ 1.8, be such as 1.6, make charge adsorption layer not affect follow-up exposure technology; Interlayer dielectric layer is formed at the surface of described front layer 100 and charge adsorption layer 300, and isolates described connecting line 500; Preferably, can form silicon oxynitride layer 310 on described charge adsorption layer 300 surface, to make exposure technology more easily realize, the scope of the extinction coefficient of described silicon oxynitride layer 310 is 0.55 ~ 0.75, such as, be 0.65.
In the present embodiment, described first metal dish 221 is formed at the surface of described front layer 100, described connecting line 500 is electrically connected with described first metal dish 221, described first metal dish 221 is kept apart by interlayer dielectric layer with described capacitance structure, the surface of described first metal dish 221 is formed with charge adsorption layer 300 and silicon oxynitride layer 310, described charge adsorption layer 300 and silicon oxynitride layer 310 are close to the sidewall of described connecting line 500, described silicon oxynitride layer 310 is formed at the surface of described charge adsorption layer 300, described second metal dish 600 is formed at the surface of described connecting line 500, kept apart by described interlayer dielectric layer between described second metal dish 600, described passivation layer 700 is formed at the surface of described interlayer dielectric layer, wherein, the material of described first metal dish 221 and the second metal dish 222 is aluminium, the material of described passivation layer 700 is the mixture of silicon oxynitride and silicon nitride.
In the present embodiment, the surface that described bottom crown 222, top crown 241, first metal dish 221 are connected with described connecting line 500 with the second metal dish 600 is all formed with barrier layer 210, the surface that described bottom crown 222 is connected with described front layer 100 with the first metal dish 221 is formed with barrier layer 210, the two side of described connecting line 500 is all formed with barrier layer 210, wherein, the material of described barrier layer 210 is the mixture of Ti and TiN.
In the present embodiment, also propose a kind of formation method of passive device structure, for the formation of passive device structure above, please refer to Fig. 2, described method comprises step:
Front layer 100 is provided;
Bottom crown layer 220, dielectric layer 230 and top crown layer 240 is formed successively on the surface of described front layer 100, wherein, before formation bottom crown layer 220, barrier layer 210 is formed on the surface of described front layer 100, before formation dielectric layer 230, form barrier layer 210 on the surface of described bottom crown layer 220, before formation charge adsorption layer, barrier layer 210 is formed, as shown in Figure 3 on the surface of described top crown layer 240;
Etched portions top crown layer 240, formed top crown 241, etching stopping in the surface of dielectric layer 230, as shown in Figure 4;
Charge adsorption layer 300 and silicon oxynitride layer 310 is formed successively, as shown in Figure 5 on the surface of described top crown 241 and dielectric layer 230;
Etch silicon oxynitride layer 310, charge adsorption layer 300, barrier layer 210, dielectric layer 230 and bottom crown layer 220 successively, expose the surface of part front layer 100, and form bottom crown 222 and the first metal dish 221, as shown in Figure 6;
The first interlayer dielectric layer 410 is formed on the surface of described silicon oxynitride layer 310 and front layer 100;
Etch described first interlayer dielectric layer 410, formed and connect string holes, described connection string holes exposes the surface of the barrier layer 210 of part top crown 241, bottom crown 222 and the first metal dish 221 successively;
Connecting line 500 is formed, as shown in Figure 7 in described connection string holes;
After formation connecting line 500, form the second metal dish 600 on the surface of described connecting line 500, as shown in Figure 8;
After formation second metal dish 600, form the second interlayer dielectric layer 420 and passivation layer 700 successively on the surface of the surface of described second metal dish 600 and the first interlayer dielectric layer 410, as shown in Figure 9; Described second interlayer dielectric layer 420 is for isolating described second metal dish 600; First interlayer dielectric layer 410 and the second interlayer dielectric layer 420 are jointly as interlayer dielectric layer; Described passivation layer 700 is for the protection of passive device structure.
To sum up, in passive device structure that the embodiment of the present invention provides and forming method thereof, at capacitance structure
Above are only the preferred embodiments of the present invention, any restriction is not played to the present invention.Any person of ordinary skill in the field; in the scope not departing from technical scheme of the present invention; the technical scheme disclose the present invention and technology contents make the variations such as any type of equivalent replacement or amendment; all belong to the content not departing from technical scheme of the present invention, still belong within protection scope of the present invention.
Claims (20)
1. a passive device structure, comprising:
Front layer, capacitance structure, connecting line and interlayer dielectric layer; Wherein, described capacitance structure is formed at the surface of described front layer, described capacitance structure surface is formed with charge adsorption layer, described connecting line is electrically connected with described capacitance structure, the sidewall of described charge adsorption layer and described connecting line is close to, interlayer dielectric layer is formed at the surface of described front layer and charge adsorption layer, and isolates described connecting line.
2. passive device structure as claimed in claim 1, it is characterized in that, described capacitance structure comprises bottom crown, top crown and dielectric layer, and described dielectric layer is formed between described top crown and bottom crown, and described connecting line is electrically connected with described bottom crown and top crown respectively.
3. passive device structure as claimed in claim 2, it is characterized in that, the material of described dielectric layer is silicon nitride or silica.
4. passive device structure as claimed in claim 2, it is characterized in that, the material of described top crown, bottom crown and connecting line is aluminium.
5. passive device structure as claimed in claim 2, it is characterized in that, described passive device structure also comprises the first metal dish, silicon oxynitride layer, the second metal dish and passivation layer; Wherein, described first metal pan-like is formed in the surface of described front layer, described connecting line is electrically connected with described first metal dish, described first metal dish and described capacitance structure are kept apart by interlayer dielectric layer, described silicon oxynitride layer is formed at the surface of described charge adsorption layer, described second metal pan-like is formed in the surface of described connecting line, and kept apart by described interlayer dielectric layer between described second metal dish, described passivation layer is formed at the surface of described interlayer dielectric layer.
6. passive device structure as claimed in claim 5, it is characterized in that, the material of described first metal dish and the second metal dish is aluminium.
7. passive device structure as claimed in claim 6, it is characterized in that, the scope of the extinction coefficient of described silicon oxynitride layer is 0.55 ~ 0.75.
8. passive device structure as claimed in claim 5, it is characterized in that, the material of described passivation layer is the mixture of silicon oxynitride and silicon nitride.
9. passive device structure as claimed in claim 5, it is characterized in that, the surface that described bottom crown, top crown, the first metal dish and the second metal dish are connected with described connecting line is all formed with barrier layer, the surface that described bottom crown is connected with described front layer with the first metal dish is formed with barrier layer, and the two side of described connecting line is all formed with barrier layer.
10. passive device structure as claimed in claim 9, it is characterized in that, the material of described barrier layer is the mixture of Ti and TiN.
11. passive device structures as claimed in claim 5, it is characterized in that, the surface of described first metal dish is formed with charge adsorption layer and silicon oxynitride layer, and the sidewall of described charge adsorption layer and silicon oxynitride layer and described connecting line is close to.
12. passive device structures as claimed in claim 1, is characterized in that, the material of described charge adsorption layer is silicon-rich silicon oxy-nitride.
13. passive device structures as claimed in claim 12, is characterized in that, the thickness range of described charge adsorption layer is 300 dust ~ 700 dusts.
14. passive device structures as claimed in claim 12, is characterized in that, the scope of the extinction coefficient of described charge adsorption layer is 1.4 ~ 1.8.
The formation method of 15. 1 kinds of passive device structures, for the formation of any one passive device structure in such as claim 1 to 14, described method comprises step:
Front layer is provided;
Bottom crown layer, dielectric layer and top crown layer is formed successively in described front layer surface;
Etched portions top crown layer, form top crown, etching stopping is in dielectric layer;
Charge adsorption layer is formed on the surface of described top crown and dielectric layer;
Etching charge adsorption layer, dielectric layer and bottom crown layer, expose part front layer successively, and form bottom crown and the first metal dish;
The first interlayer dielectric layer is formed on the surface of described charge adsorption layer and front layer;
Etch described first interlayer dielectric layer, formed and connect string holes, described connection string holes exposes part top crown, bottom crown and the first metal dish successively;
Connecting line is formed in described connection string holes.
The formation method of 16. passive device structures as claimed in claim 15, is characterized in that, after formation connecting line, forms the second metal dish on the surface of described connecting line.
The formation method of 17. passive device structures as claimed in claim 16, is characterized in that, after formation second metal dish, dielectric layer surface forms the second interlayer dielectric layer between described second metallic disc surface and ground floor.
The formation method of 18. passive device structures as claimed in claim 16, is characterized in that, after formation second interlayer dielectric layer, forms passivation layer on the surface of described second interlayer dielectric layer.
The formation method of 19. passive device structures as claimed in claim 15, it is characterized in that, the surface be connected with described connecting line at described bottom crown, top crown, the first metal dish, the second metal dish respectively forms barrier layer, the surface be connected with described front layer at described bottom crown, the first metal dish forms barrier layer, forms barrier layer in the two side of described connecting line.
The formation method of 20. passive device structures as claimed in claim 15, is characterized in that, before etching charge adsorption layer, dielectric layer and bottom crown layer, forms silicon oxynitride layer on the surface of described charge adsorption layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660673A (en) * | 2019-10-30 | 2020-01-07 | 长江存储科技有限责任公司 | Semiconductor structure and forming method thereof |
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| US4481283A (en) * | 1982-04-30 | 1984-11-06 | U.S. Philips Corporation | Method of manufacturing an integrated capacitor and device obtained by this method |
| CN101777518A (en) * | 2009-01-13 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | Method for improving integral parameter of gate oxide layer |
| CN101789429A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal capacitor structure and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4481283A (en) * | 1982-04-30 | 1984-11-06 | U.S. Philips Corporation | Method of manufacturing an integrated capacitor and device obtained by this method |
| CN101777518A (en) * | 2009-01-13 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | Method for improving integral parameter of gate oxide layer |
| CN101789429A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal capacitor structure and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660673A (en) * | 2019-10-30 | 2020-01-07 | 长江存储科技有限责任公司 | Semiconductor structure and forming method thereof |
| CN110660673B (en) * | 2019-10-30 | 2023-10-27 | 长江存储科技有限责任公司 | Semiconductor structure and forming method thereof |
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