KR102318514B9 - Transparent electrode or transistor semiconductor active layer comprising organicnonorganic hybid superlattice structure - Google Patents

Transparent electrode or transistor semiconductor active layer comprising organicnonorganic hybid superlattice structure

Info

Publication number
KR102318514B9
KR102318514B9 KR1020190165214A KR20190165214A KR102318514B9 KR 102318514 B9 KR102318514 B9 KR 102318514B9 KR 1020190165214 A KR1020190165214 A KR 1020190165214A KR 20190165214 A KR20190165214 A KR 20190165214A KR 102318514 B9 KR102318514 B9 KR 102318514B9
Authority
KR
South Korea
Prior art keywords
organicnonorganic
hybid
active layer
transparent electrode
semiconductor active
Prior art date
Application number
KR1020190165214A
Other languages
Korean (ko)
Other versions
KR102318514B1 (en
KR20210074487A (en
Inventor
김명길
민 넛 레
백강준
김가혜
Original Assignee
성균관대학교산학협력단
부경대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 성균관대학교산학협력단, 부경대학교 산학협력단 filed Critical 성균관대학교산학협력단
Priority to KR1020190165214A priority Critical patent/KR102318514B1/en
Publication of KR20210074487A publication Critical patent/KR20210074487A/en
Application granted granted Critical
Publication of KR102318514B1 publication Critical patent/KR102318514B1/en
Publication of KR102318514B9 publication Critical patent/KR102318514B9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
KR1020190165214A 2019-12-12 2019-12-12 Transparent electrode or transistor semiconductor active layer comprising organic―nonorganic hybid superlattice structure KR102318514B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020190165214A KR102318514B1 (en) 2019-12-12 2019-12-12 Transparent electrode or transistor semiconductor active layer comprising organic―nonorganic hybid superlattice structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190165214A KR102318514B1 (en) 2019-12-12 2019-12-12 Transparent electrode or transistor semiconductor active layer comprising organic―nonorganic hybid superlattice structure

Publications (3)

Publication Number Publication Date
KR20210074487A KR20210074487A (en) 2021-06-22
KR102318514B1 KR102318514B1 (en) 2021-10-28
KR102318514B9 true KR102318514B9 (en) 2022-03-15

Family

ID=76600458

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190165214A KR102318514B1 (en) 2019-12-12 2019-12-12 Transparent electrode or transistor semiconductor active layer comprising organic―nonorganic hybid superlattice structure

Country Status (1)

Country Link
KR (1) KR102318514B1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032689A (en) * 2004-07-16 2006-02-02 Sharp Corp Organic device
KR101298017B1 (en) * 2008-12-24 2013-08-19 한양대학교 산학협력단 N-type organic-inorganic nanohybrid superlattice transparent semiconductor thin film, method for preparing the same, and uses of the same for electronic devices
KR101389451B1 (en) * 2012-03-19 2014-04-29 연세대학교 산학협력단 Composition for oxide thin film, Method for forming oxide thin film, an electrical device using the low-temperature pressure annealing, and a thin film transistor

Also Published As

Publication number Publication date
KR102318514B1 (en) 2021-10-28
KR20210074487A (en) 2021-06-22

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Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
G170 Re-publication after modification of scope of protection [patent]