KR102313589B1 - Manufacturing method of aluminium nitride ceramics - Google Patents

Abstract

The present invention discloses an aluminum nitride ceramics composition in which CaCO ₃ ·Al ₂ O ₃ ·SiO ₂ glass is added to an aluminum nitride (AlN) ceramic composition to form a solid solution, and a method for manufacturing the same. In particular, the present invention minimizes and suppresses the respective contents of residual carbon and residual oxygen inside the sintered AlN substrate manufactured by a thick film process such as tape casting without using expensive rare earths such as _{Y 2} O _{3 as a sintering aid.} As a result, both the sintering properties and thermal conductivity of the AlN sintered body are improved from a technical point of view, while the manufacturing cost of the AlN sintered body can be greatly reduced from an economical point of view.

Description

Manufacturing method of aluminum nitride ceramics composition

The present invention relates to a method for manufacturing an aluminum nitride ceramic composition, and in particular, it is possible to improve both the sintering and thermal conductivity characteristics of an aluminum nitride (AlN) sintered body, and to significantly lower the manufacturing cost of the AlN sintered body, and to combine with attached printed metal electrodes. It relates to a method for producing an aluminum nitride ceramic composition capable of simultaneous firing.

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In general, aluminum nitride (AlN) has a thermal conductivity (319W/m·K) that is 10 times higher than that of alumina in theory, and a coefficient of thermal expansion (4×10 ^-6 ) lower than that of alumina, and has excellent mechanical strength (430MPa) and electrical resistance. (9×10 ¹³ Ω·cm). Accordingly, aluminum nitride is very promising for semiconductor substrates of high thermal conductivity ceramics and ceramic parts such as heaters and electrostatic chucks.

Although aluminum nitride (AlN) has such excellent properties, above all, the problem that the actual thermal conductivity level is greatly deteriorated than the theoretical value due to its difficulty in sintering and the influence of impurities during manufacture is a challenge to be overcome.

In general, aluminum nitride is manufactured in such a way that it is subjected to sintering at a high temperature in the range of 1700 to 1900° C. by tape-casting and then heating and degreasing the organic material contained therein for thick film forming for parts. In particular, at this time, a large amount of impurities such as oxygen adhering to the surface of the AlN raw material powder are dissolved in the AlN crystal lattice during sintering, or a complex such as an Al-ON compound that interferes with the propagation of lattice vibration is generated, thereby thermal conduction of the aluminum nitride sintered body greatly deteriorate the

Therefore, in recent years, when the aluminum nitride sintered body is manufactured by atmospheric pressure sintering as above, in order to prevent densification of the sintered body and oxygen impurities are dissolved in crystal grains or Al-ON compounds are generated, such as Y ₂ O ₃ It is common to add a sintering aid. Such a sintering aid is _{known to increase the thermal conductivity by forming a liquid phase by reacting with the oxygen impurities and Al 2} O ₃ during AlN sintering to achieve densification of the sintered body and to collect the oxygen impurities at grain boundaries.

In addition, as a method of increasing the thermal conductivity of the aluminum nitride sintered body, a method of preventing oxidation problems by applying a non-aqueous solvent to the slurry for tape casting or extending the sintering holding time to suppress the generation of internal secondary phases has also been proposed.

In general, a green sheet of aluminum nitride (AlN) manufactured by a tape casting method must be co-fired with metal electrodes printed on the inner and outer surfaces for componentization. Therefore, before sintering, the AlN green sheet is By applying a degreasing process of heating and maintaining at a temperature of However, since the organic material such as a binder added to the composition for the formation of the green sheet is generally contained in an amount of 10 wt% or more, the organic material generates residual carbon during sintering and reduces sinterability.

In addition, in order to prevent the adverse effects of oxygen impurities, _{the method of using expensive rare earths such as Y 2} O ₃ as an additive or extending the sintering holding time as above makes it impossible to continuously lower the production cost of the aluminum nitride sintered body.

International Publication No. WO97/03031 (published on January 30, 1997) Japanese Unexamined Patent Publication No. 8-147261 (published on June 18, 1996) Japanese Unexamined Patent Publication No. 8-147262 (published on June 18, 1996)

Accordingly, the present invention improves both the sintering and thermal conductivity properties of the aluminum nitride (AlN) sintered body without using expensive rare earths such as _{Y 2} O _{3 as a sintering aid, and can greatly reduce the manufacturing cost of the AlN sintered body.} An object of the present invention is to provide a method for producing a ceramic composition.

In order to achieve the above object, according to one aspect of the present invention, CaCO ₃ ·Al ₂ O ₃ ·SiO ₂ glass is added to the AlN ceramic composition to form an aluminum nitride ceramics composition forming a solid solution is provided.

In addition, optionally, the glass may be composed of components in the following content (wt%) range relative to the total weight of the glass:

CaCO ₃ 55~65

Al ₂ O ₃ 30~45

SiO ₂ 0.5~5.

In addition, optionally, the aluminum nitride ceramics composition may be intentionally excluded from containing rare earth.

In addition, optionally, the content of the glass may be in the range of 1 to 10 wt% based on the total weight of the aluminum nitride ceramic composition.

In addition, according to another aspect of the present invention, there is provided a method for producing an aluminum nitride ceramic composition comprising the following steps:

_{- Mixing CaCO 3} ·Al ₂ O ₃ ·SiO ₂ glass powder with AlN powder and forming a green sheet;

- Forming a solid solution by sintering the green sheet after degreasing.

In addition, the content ratio of the glass powder:Al powder optionally mixed may be in the range of 1:99 to 10:90 wt%.

In addition, optionally, the green sheet may be configured not to intentionally contain rare earth components.

In addition, optionally, the glass powder may be composed of components in the following content (wt%) range based on the total weight of the glass powder:

CaCO ₃ 55~65

Al ₂ O ₃ 30~45

SiO ₂ 0.5~5.

In addition, optionally, the degreasing treatment may be performed in one of an atmosphere _{, an N 2} atmosphere, a vacuum, and a wet N _{2 atmosphere.}

In addition, optionally, the degreasing treatment may be performed at a temperature in the range of 300 ~ 1000 ℃.

In addition, optionally, the sintering temperature may be carried out at a temperature in the range of 1700 ~ 1900 ℃.

In addition, optionally, the green sheet may contain a binder.

In addition, optionally, the content of the binder may be in the range of 4 to 5 wt% based on the total amount of the green sheet.

In addition, optionally, the green sheet may contain at least one of a dispersant and a plasticizer.

In addition, optionally, the content of the dispersant may be in the range of 0.3 to 0.9 wt% relative to the total amount of the green sheet.

In addition, optionally, the content of the plasticizer may be in the range of 1.8 to 2.2 wt% based on the total amount of the green sheet.

In addition, optionally forming the green sheet may include attaching one or more metal electrodes to at least one of the inside and outside of the green sheet, and the metal electrode may be co-fired together with the green sheet. have.

The manufacturing method of the aluminum nitride ceramic composition according to the present invention is manufactured by _{a thick film process such as tape casting without using expensive rare earths such as Y 2} O ₃ as a sintering aid, and sintered aluminum nitride (AlN) residual carbon inside the substrate By minimizing and suppressing the respective contents of and residual oxygen, both the sintering and thermal conductivity properties of the AlN sintered body can be effectively improved from a technical point of view, while the manufacturing cost of the AlN sintered body can be greatly reduced from an economical point of view.

In addition, since the composition of the present invention minimizes the residual oxygen content as described above, oxidation of the printed metal electrodes attached to the green sheet for componentization can be prevented, and effective simultaneous firing with the metal electrodes is possible, which is advantageous.

1 is a green bar obtained by laminating six CAS glass-added AlN composition green sheets in an embodiment of the present invention, respectively, in air, N ₂ , vacuum, and wet N ₂ atmosphere for 10 hours. It is a graph showing the weight loss in each atmospheric condition with respect to the post-debinding temperature.
2A to 2B show the actual residual oxygen and carbon contents according to the degreasing process temperature and atmosphere of the degreasing green bar of FIG. 1 , FIG. 2A is the residual oxygen content, and FIG. 2B is the residual carbon content. content) respectively.
3 is a graph showing changes in bulk density and thermal conductivity of AlN substrates according to residual carbon contents after degreasing and sintering processes of Examples 1 to 8 of the present invention.
4 is an X-ray diffraction analysis result showing the phase change according to the residual carbon content of the sintered AlN substrates of Examples 4, 6 and 8 among the examples of the present invention shown in Tables 1 and 3, and Residual carbon content "0.064wt%", "0.38wt%", "0.59wt%" and "1.1wt%" all represent the residual carbon content of the AlN substrate before sintering.
5a to 5c are scanning electron micrographs showing the microstructure of the fracture surface in each of the sintered AlN substrates of Examples 4, 6 and 8 among the embodiments of the present invention shown in Tables 1 and 3, and FIG. 5A (Example) 4) is a specimen degreased at 400° C. in a vacuum atmosphere for 10 hours and then sintered at 1850° C. for 3 hours in a nitrogen atmosphere, FIG. 5b (Example 6) is a nitrogen atmosphere at 1000° C., and FIG. are specimens sintered under the same conditions as in FIG. 5A after each degreasing at 900° C. in a nitrogen atmosphere.
6 is an EDS analysis result showing the components of the secondary phase observed in the microstructure of the sample of Example 4 of the present invention shown in FIG. 5a.

The present invention solves the problem of residual carbon and residual oxygen in the aluminum nitride (AlN) sintered compact that has undergone the thick film process as described above without using expensive rare earths such as _{Y 2} O _{3 as a sintering aid, and at the same time thermal conductivity} Compositions and methods for improving properties are disclosed.

Accordingly, the composition of the present invention is composed of a composition in which Ca-Al-Si-O-based glass (hereinafter referred to as "CAS glass") is added to aluminum nitride (AlN) and is manufactured as a thick-film green sheet. Before sintering, the degreasing treatment is carried out at a temperature in the range of 300 to 1000° C., preferably in the range of 400 to 1000° C. in the air, in a N ₂ atmosphere, in a vacuum, or in a wet N ₂ (wet N _{2 ) atmosphere.} In addition, in a preferred embodiment of the present invention, the sintering temperature of the AlN green sheet is 1700 ~ 1900 ℃.

According to the present invention, the CAS glass contained in the composition of the present invention undergoes a thermal carbon reduction reaction as shown in Equation 1 between AlN and oxygen inside the CAS glass and the generated residual carbon in the sintering process of AlN that has undergone a thick film process. induce By this reaction, carbon from organic materials such as binders added in the thick film process is vaporized as CO, thereby preventing carbon from remaining in AlN. Accordingly, the crystallinity of the AlN sintered body is increased and thus the thermal conductivity property is improved.

Al ₂ O ₃ + 3C + N ₂ → 2AlN + 3CO (Formula 1)

Accordingly, in a preferred embodiment of the present invention, the CAS glass added to the AlN composition of the present invention may be composed of the composition of Equation 2 below, for example, the CAS glass is 1 to the total amount of the composition of the present invention as shown in Equation 3 below. A range of ˜10 wt %, more preferably 1 wt % may be added.

CaCO ₃ 55~65 wt%

Al ₂ O ₃ 30~45 wt%

SiO ₂ 0.5~5 wt% (Formula 2)

AlN 90~99 wt%

CAS glass 1~10 wt% (Formula 3)

In addition, according to a preferred embodiment of the present invention, the composition of the present invention may be degreased and sintered in the above degreasing temperature range under _{vacuum or wet N 2} (wet N _{2 ) atmosphere, in this case observed in the examples below} As such, while the residual carbon content inside AlN is suppressed to a trace amount, the residual oxygen content is also suppressed to a trace amount. This is directly related to the improvement of the sintering and thermal conductivity properties of the AlN composition of the present invention, and at the same time, oxidation of the metal electrodes printed on the AlN green sheet for componentization can be prevented, so that effective simultaneous firing of the AlN composition and the metal electrodes is possible. means This is observed and demonstrated in detail in the examples below.

In addition, in the embodiments of the present invention, as organic materials contained in the AlN green sheet, the dispersant relative to the total amount of the composition of the present invention is in the range of 0.3 to 0.9 wt%, preferably in the range of 0.6 wt%, and the binder is in the range of 4 to 5 wt%, The plasticizer may be added in the range of 1.8 to 2.2 wt %, respectively. As an example, the binder is poly vinylbutyral (PVB).

In addition, in one embodiment of the present invention, the AlN ceramic composition of the present invention as described above has a thermal conductivity in the range of 80 ~ 160 W / m · K and ^{a bulk density in the range of 3.21 ~ 3.24 g / cm 3} , and has a single crystalline phase.

Hereinafter, the present invention will be described in more detail together with various embodiments of the present invention with reference to the accompanying drawings.

Example

Preparation of CAS Glass Powder

First, the CAS glass composition to be used in the Examples _{is composed of 60wt% CaCO 3} , 36wt% Al ₂ O ₃ , and 4wt% SiO ₂ 562 g is placed and thoroughly mixed for 24 hours, then placed in a 1 liter capacity platinum crucible at 1480° C. It was melted in a furnace and then quenched to obtain glass cullet. To make this glass cullet into glass frit, it was coarsely pulverized to a size of several tens of μm in an agate mortar as the first pulverization, and after dry ball milling for 48 hours using zirconia balls as the second pulverization, zirconia balls and zirconia balls as the third pulverization Wet ball milling was performed for 24 hours using ethanol as a solvent. The CAS glass powder thus prepared was dried at 100° C. for 24 hours to finally prepare a CAS glass powder having an average particle diameter of 1 to 2 μm.

Preparation and properties of CAS glass-added AlN composition

After that, the CAS glass powder prepared above was added to the commercial AlN powder in the range of 1 to 10 wt % to form a green sheet with a thickness of 200 μm, and these 6 green sheets were stacked up and down to a total thickness of 1.2 mm, and then at 400 to 1000 ° C. Each oxygen content and carbon content were measured by degreasing in different air, N ₂ , vacuum, and wet N _{2 atmospheres for 10 hours.}

First, FIG. 1 shows a green bar obtained by laminating six CAS glass-added AlN composition green sheets in an embodiment of the present invention in air, N ₂ , vacuum, and wet N ₂ atmosphere for 10 hours, respectively. It is a graph showing the weight loss in each atmospheric condition with respect to the debinding temperature after degreasing.

Referring to FIG. 1 , at a degreasing temperature of 400° C., the weight loss was at most about 11% in all atmospheric conditions except for the nitrogen atmosphere, and it can be seen that the weight loss gradually decreased as AlN was oxidized as the temperature increased. At this time, in _{the case of the wet N 2} atmosphere, it showed a tendency similar to the atmospheric atmosphere rather than the vacuum atmosphere. On the other hand, the weight loss continued to increase as the temperature increased in a nitrogen atmosphere. Here, it is confirmed that the weight loss at 1000° C. is 9.3 wt%, indicating that the degreasing does not proceed smoothly, which means that a higher temperature is required to remove the binder when the oxygen partial pressure is low. It is demonstrated from FIG. 1 that the residual oxygen and carbon contents vary according to the degreasing process conditions.

2A to 2B show the actual residual oxygen and carbon contents according to the degreasing process temperature and atmosphere of the degreasing green bar of FIG. 1, FIG. 2A is the residual oxygen content, and FIG. 2B is the residual carbon content. content) respectively.

As shown in FIG. 2a, the residual oxygen content was detected to be within 1.5 wt% in the atmosphere except for the atmosphere of 800° C. or higher and the wet N _{2 atmosphere.} As shown in FIG. 2B , the carbon content was detected only in a very small amount of 0.052 to 0.079 wt% from a temperature range of 400° C. or higher in the case of an atmospheric atmosphere. In particular, since an increase in oxygen content is insignificant in a vacuum atmosphere and a wet N ₂ atmosphere, it can be seen that it can be advantageously applied to simultaneous firing with an electrode.

On the other hand, as shown in Fig. 2b, in the case of nitrogen atmosphere, the carbon content is the highest at 300 °C at 1.65 wt%, and as the temperature increases, the carbon content decreases and it can be seen that it is lowered to 0.59 wt% at 1000 °C, which is As in FIG. 1 , it means that the weight is reduced while the binder whose main component is carbon is removed.

Table 1 below summarizes the contents of oxygen and carbon remaining inside after sintering of Examples 1 to 8 of the present invention according to various degreasing conditions (temperature and atmosphere), bulk density, and thermal conductivity data. 3 is a graph showing changes in the bulk density and thermal conductivity of the AlN substrate according to the residual carbon contents after the degreasing and sintering processes of Examples 1 to 8 of the present invention. .

degreasing conditions
(Temperature/Atmosphere) residual oxygen
content (wt%) residual carbon
content (wt%) bulk density (g/cm ³ ) thermal conductivity
(W/m K) Example 1 400 ^o C/atmospheric 0.48 0.077 3.21 82.19 Example 2 800 ^o C/wet N ₂ 0.47 0.031 3.22 93.19 Example 3 800 ^o C/in vacuum 0.47 0.036 3.22 108.31 Example 4 400 ^o C/vacuum 0.40 0.027 3.21 126.29 Example 5 600 ^o C/wet N ₂ 0.23 0.040 3.22 130.83 Example 6 1000 ^o C/N ₂ 0.19 0.053 3.21 161.60 Example 7 300 ^o C/in vacuum 0.19 0.053 3.21 143.04 Example 8 900 ^o C/N ₂ 0.12 0.079 2.69 60.01

As shown in Table 1 and FIG. 3, the residual carbon content of the sintered AlN substrate changed from a minimum of 0.064 wt% to a maximum of 0.70 wt%, while the bulk density showed almost ^{no significant change to 3.21 g/cm 3} , while the thermal conductivity The figure showed an approximately two-fold increase from 82W/mK to 161W/mK. That is, in the range of 0.064 to 0.7 wt% of the residual carbon content of the AlN substrate, there is almost no change in density, so the correlation between density and thermal conductivity is not seen. On the other hand, when the residual carbon content of the sintered AlN substrate was increased to 0.83 wt% or more, the bulk density was 2.69 g/cm ³ , and the thermal conductivity was rapidly decreased to 60 W/mK. This is because AlN sintering did not proceed sufficiently due to internal residual carbon, and both bulk density and thermal conductivity properties were deteriorated.

4 is an X-ray diffraction analysis result showing the phase change according to the residual carbon content of the sintered AlN substrates of Examples 4, 6, and 8 among the Examples of the present invention shown in Tables 1 and 3; At this time, the residual carbon content "0.064wt%", "0.38wt%", "0.59wt%", and "1.1wt%" respectively described in FIG. 4 is the residual carbon content of the AlN substrate before sintering. indicates.

4, when the residual carbon content of the AlN substrate before sintering was 0.064 wt% and 1.1 wt%, both SiO ₂ peaks were detected at insignificant levels, which is a component of CAS glass added to AlN, SiO ₂ was detected. is judged However, although not added, some detected ZrN peaks _{appear to be contaminated while some of the ZrO 2} balls used during the ball milling process of these Examples are pulverized, but their relative strength is very weak, so the main crystalline phase under all conditions It can be clearly confirmed that is an AlN phase.

Since the difference in the relative diffraction intensities of the main crystal phases in FIG. 4 is weak, the correlation between the residual carbon content and the AlN crystal phase is not observed, and in particular, all of them exhibit a single crystal phase of AlN. This is because the content of the added CAS glass is 1wt%, so it did not react significantly with AlN, so the X-ray detection limit was not reached, or the glass was evaporated during the sintering process. do.

5a to 5c are scanning electron micrographs showing the microstructure of the fracture surface in each of the sintered AlN substrates of Examples 4, 6 and 8 among the embodiments of the present invention shown in Tables 1 and 3, and FIG. 5A (Example) 4) is a specimen degreased at 400° C. in a vacuum atmosphere for 10 hours and then sintered at 1850° C. for 3 hours in a nitrogen atmosphere, FIG. 5b (Example 6) is a nitrogen atmosphere at 1000° C., and FIG. are specimens sintered under the same conditions as in FIG. 5A after each degreasing at 900° C. in a nitrogen atmosphere. In addition, FIG. 6 is an EDS analysis result showing the components of the secondary phase observed in the microstructure of the sample of Example 4 of the present invention shown in FIG. 5A.

As shown in Figs. 5a to 5b, in the case of Examples 4 and 6, in which the residual carbon content of the AlN substrate before sintering was 0.38 wt% and 0.59 wt%, a dense microstructure with almost no pores was observed. However, in the specimen of FIG. 5A (Example 4), a continuous secondary phase was observed along the grain boundary of AlN, whereas in the specimen of FIG. 5B (Example 6), no secondary phase was observed. In this regard, referring to FIG. 6 , the main phase is identified as AlN, and the secondary phase is Al-Ca-O-N containing oxygen as a main component. Therefore, in the composition of Example 6 in which the residual carbon content of the AlN substrate before sintering is 0.59 wt%, it can be seen that the secondary phase is removed by the above-described thermal carbon reduction reaction, thereby increasing the thermal conductivity.

Meanwhile, referring to FIGS. 3 and 1 , the thermal conductivity of the specimen of FIG. 5A (Example 4) was 126 W/mK, whereas that of the specimen of FIG. 5B (Example 6) was 161 W/mK. From these results, it can be inferred that the change in thermal conductivity of FIG. 3 is due to the shape of the secondary phase. That is, it is analyzed that such continuous secondary phases are formed inside, and thermal conductivity is lowered by causing phonon scattering.

On the other hand, when the residual carbon content of the AlN substrate before sintering is 1.1 wt%, it is confirmed that the grains do not grow completely and pores remain as shown in the specimen (Example 8) of FIG. 5c, which is ejected when the residual carbon content is large Because the amount of CO or CO ₂ gas used is large, pores cannot be removed and it is inferred that crystal growth is inhibited.

_{In addition, Table 2 below shows that in another embodiment of the present invention, 1 to 5 wt% of rare earth Y 2} O ₃ , CaCO ₃ and Sm ₂ O ₃ were added to the AlN composition to which 5 wt% of CAS glass was added, respectively, so that the bulk, not the thick film process, was added. As AlN sintered compacts molded with ^{and sintered at 1850 o} C, their sinterability and thermal conductivity properties were observed and summarized.

Furtherance bulk density
(g/cm ³ ) average grain size
(μm) thermal conductivity
(W/m K) resistivity
(Ω·cm)
Example 9 92 wt% AlN;
1wt% Y ₂ O ₃ ;
1wt% CaCO ₃ ;
1 wt% Sm ₂ O ₃ ; and
5wt% CAS glass

3.26

2.32

105

10 ¹⁵
Example 10 87 wt % AlN;
2wt% Y ₂ O ₃ ;
1wt% CaCO ₃ ;
5 wt % Sm ₂ O ₃ ; and
5wt% CAS glass

3.32

2.15

88

10 ¹⁴

Referring to Table 2, even when rare earths are further added to the AlN composition added with CAS glass, compared to AlN compositions with CAS glass (Examples 1 to 8), in which the rare earth is intentionally excluded and replaced only with the addition of CAS glass As a result (see Table 1), the bulk density and thermal conductivity are generally rather poor. Therefore, in the present invention, good sintering and thermal conductivity properties can be obtained even if only CAS glass is added without adding rare earth to AlN, and simultaneous firing with attached metal electrodes is possible. It is preferred that the addition is intentionally excluded.

As described above, in the present invention, each content of residual carbon and residual oxygen inside a sintered aluminum nitride (AlN) substrate manufactured by a thick film process such as tape casting without using expensive rare earths such as _{Y 2} O _{3 as a sintering aid.} By being able to minimize and suppress the AlN sintered body, both the sintering and thermal conductivity properties of the AlN sintered body can be improved from a technical point of view, while the manufacturing cost of the AlN sintered body can be greatly reduced from an economical point of view.

In addition, the composition of the present invention is advantageous because the residual oxygen content is minimized as described above, oxidation of the metal electrodes printed on the green sheet for componentization can be prevented, and effective simultaneous firing with the metal electrodes is possible.

As described above, in the above-described embodiments and examples of the present invention, the powder properties such as the average particle size, distribution and specific surface area of the composition powder, the purity of the raw material, the amount of impurities added and the sintering conditions slightly fluctuate within the normal error range. It is very natural for those of ordinary skill in the relevant field that this may exist.

In addition, the preferred embodiments and embodiments of the present invention described above are disclosed for the purpose of illustration, and various modifications, changes, additions, etc. are possible within the spirit and scope of the present invention by anyone skilled in the art. and such modifications, changes, additions, etc. should be considered to fall within the scope of the claims. As an example, as described above, since the AlN composition of the present invention minimizes the residual oxygen content as described above, the green sheet formed through a thick film process such as tape casting for componentization has one or more metal electrodes on one or more of its inside and outside. can be attached, and this metal electrode can be co-fired with the green sheet.

Claims (17)

delete delete delete delete In the method for producing an aluminum nitride ceramic composition,
Prepare a glass powder, wherein the glass powder contains 55 to 65 wt% CaCO ₃ , 30 to 45 wt% Al ₂ O ₃ and 0.5 to 5 wt% SiO ₂ relative to the total weight of the glass powder, and contains no rare earth components the first step, which is an excluded composition;
a second step of mixing the glass powder and the organic material with the AlN powder and forming a green sheet from the mixture;
a third step of attaching one or more metal electrodes to one or more of the inside and the outside of the green sheet; and
A fourth step of sintering the green sheet to which the one or more metal electrodes are attached is first _{degreasing in a vacuum or wet N 2} atmosphere in a temperature range of 400 to 800° C.
A method for producing an aluminum nitride ceramic composition comprising a. 6. The method of claim 5,
In the second step, the content of the glass is in the range of 1 to 10 wt% based on the total weight of the AlN powder and the glass powder. delete delete delete delete 6. The method of claim 5,
The sintering in the fourth step is a method of manufacturing an aluminum nitride ceramic composition that is performed at a temperature range of 1700 ~ 1900 ℃. 6. The method of claim 5,
In the second step, the organic material is a method of manufacturing an aluminum nitride ceramic composition containing a binder. 13. The method of claim 12,
The content of the binder is in the range of 4 to 5 wt% relative to the total amount of the green sheet, the method for producing an aluminum nitride ceramic composition. 13. The method of claim 12,
In the second step, the organic material is a method of manufacturing an aluminum nitride ceramic composition further containing at least one of a dispersing agent and a plasticizer. 15. The method of claim 14,
The content of the dispersant is in the range of 0.3 to 0.9 wt % relative to the total amount of the green sheet. 15. The method of claim 14,
The content of the plasticizer is in the range of 1.8 to 2.2 wt % of the total amount of the green sheet. Method for producing an aluminum nitride ceramic composition. delete

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