KR102278084B1 - Apparatus and Method for treating substrate - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. According to an embodiment of the present invention, a substrate processing apparatus includes: a process chamber having an upper body and a lower body having a processing space therein; a gas supply unit supplying gas to the processing space; a support unit positioned in the processing space and supporting the substrate; a heating unit provided to heat the substrate placed on the support unit; In addition, the upper body or the lower body may include an adsorption block provided adjacent to a gap between the upper body and the lower body to prevent an outflow of an internal atmosphere of the processing space and prevent water vapor from flowing into the processing space.
According to an embodiment of the present invention, it is possible to prevent an external airflow from flowing into the processing space and prevent gas from flowing out of the processing space to the outside.

Description

Apparatus and Method for treating substrate

The present invention relates to an apparatus and method for processing a substrate.

A photo-lithography process among semiconductor manufacturing processes is a process of forming a desired pattern on a wafer. The photographic process is usually carried out in a spinner local facility that is connected to an exposure facility and continuously processes the coating process, the exposure process, and the developing process.

This spinner facility sequentially or selectively performs a hexamethyl disilazane (HMDS) treatment process, a coating process, a baking process, and a developing process.

The HMDS treatment process is a process of hydrophobizing the substrate by supplying HMDS onto the wafer before applying the photoresist in order to increase the adhesion efficiency of the photoresist (PR). The bake process is a process of heating and cooling a wafer in order to strengthen the photoresist film formed on the wafer or to adjust the temperature of the wafer to a preset temperature.

1 is a diagram showing a typical heat treatment apparatus 2 for processing an HMDS treatment process. The heat treatment device 2 has an upper housing 3 , a lower housing 4 , a sealing member 5 , a support unit 6 , and a gas supply unit 7 . The gas supply unit 7 supplies HMDS gas. HMDS converts the properties of the substrate W from hydrophilic to hydrophobic. However, during the process, the process proceeds in a state in which the upper housing 3 and the lower housing 4 are sealed. A sealing member 5 is provided to maintain a closed state.

However, when the substrate flows in or out, one of the upper housing 3 or the lower housing 4 is raised and lowered to open the inside. In this process, external water vapor flows into the housing 3 through the damage of the sealing member 5 or a gap in the periphery, and the HMDS gas inside the housing 3 flows out.

When water vapor flows into the housing 3, the water vapor acts as a catalyst for the reaction between the HMDS gas and the substrate, and the angle at which the photoresist contacts the surface of the substrate is changed. In addition, when the HMDS gas flows out, the supply amount of the HMDS gas increases.

Instead of the sealing member (5), an air curtain may be formed between the upper housing (3) and the lower housing (4). However, even if the flow rate of gas injected from the air curtain is adjusted in order to prevent external water vapor from flowing into the housing 3 and the HMDS gas from flowing out of the housing 3, the flow rate of the gas injected from the air curtain is the photoresist. There is a problem affecting the angle of contact with the surface of this substrate.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of preventing an external airflow from flowing into a processing space.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of preventing gas from flowing out of a processing space to the outside.

The present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides an apparatus for processing a substrate. According to an embodiment of the present invention, a substrate processing apparatus includes: a process chamber having an upper body and a lower body having a processing space therein; a gas supply unit supplying gas to the processing space; a support unit positioned in the processing space and supporting the substrate; a heating unit provided to heat the substrate placed on the support unit; In addition, the upper body or the lower body may include an adsorption block provided adjacent to a gap between the upper body and the lower body to prevent an outflow of an internal atmosphere of the processing space and prevent water vapor from flowing into the processing space.

According to one embodiment, the adsorption block may be provided with a porous material.

According to an embodiment, the porous material may include zeolite or metal-organic frameworks (MOFs).

According to an embodiment, the gas supplied from the gas supply unit may include hexamethyldisilazane (HMDS).

According to an embodiment, the adsorption block may be provided in a ring shape.

According to an embodiment, the adsorption block may further include a ring-shaped blocking plate provided between the inner circumferential surface and the outer circumferential surface.

According to an embodiment, the adsorption block is disposed between the upper body and the lower body, so that the processing space may be defined by being surrounded by the upper body, the lower body, and the adsorption block.

The present invention also provides a method for processing a substrate. According to an embodiment of the present invention, in the substrate processing method, the surface of the substrate is hydrophobized by supplying a tetramethyldisilazane (HMDS) gas to the processing space, and in the processing space by an adsorption block during the hydrophobicization treatment The generated ammonia is prevented from flowing out of the processing space, and external water vapor is blocked into the processing space.

According to an embodiment, the adsorption block is provided in a ring shape.

According to an embodiment, the adsorption block may further include a ring-shaped blocking plate provided between the inner circumferential surface and the outer circumferential surface.

According to an embodiment, the adsorption block is disposed between the upper body and the lower body, so that the processing space may be defined by being surrounded by the upper body, the lower body, and the adsorption block.

According to an embodiment of the present invention, it is possible to prevent an external airflow from flowing into the processing space.

In addition, according to the embodiment of the present invention, it is possible to prevent the gas from flowing out of the processing space.

Effects of the present invention are not limited to the above-described effects, and effects not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the present specification and accompanying drawings.

1 is a cross-sectional view showing a general heat treatment apparatus.
2 is a perspective view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view of the substrate processing apparatus showing the application block or the developing block of FIG. 2 .
4 is a plan view of the substrate processing apparatus of FIG. 2 .
5 is a cross-sectional view illustrating a substrate processing apparatus according to an exemplary embodiment.
FIG. 6 is an enlarged view of area A of FIG. 5 .
7 is a view showing an adsorption block according to another embodiment of the present invention.
8 is a cross-sectional view illustrating a substrate processing apparatus according to another exemplary embodiment.

Hereinafter, an embodiment of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those of ordinary skill in the art. Accordingly, the shapes of elements in the drawings are exaggerated to emphasize a clearer description.

2 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 3 is a cross-sectional view of the substrate processing apparatus showing the application block or the developing block of FIG. 2 , and FIG. 4 is the substrate processing apparatus of FIG. 2 is a plan view of

2 to 4 , the substrate processing apparatus 1 includes an index module ( 20 ), a processing module ( 30 ), and an interface module ( 40 ). According to an embodiment, the index module 20 , the processing module 30 , and the interface module 40 are sequentially arranged in a line. Hereinafter, a direction in which the index module 20 , the processing module 30 , and the interface module 40 are arranged is referred to as a first direction 12 , and a direction perpendicular to the first direction 12 when viewed from the top is referred to as a first direction 12 . A second direction 14 is referred to, and a direction perpendicular to both the first direction 12 and the second direction 14 is referred to as a third direction 16 .

The index module 20 transfers the substrate W from the container 10 in which the substrate W is accommodated to the processing module 30 , and accommodates the processed substrate W in the container 10 . The longitudinal direction of the index module 20 is provided in the second direction 14 . The index module 20 has a load port 22 and an index frame 24 . With reference to the index frame 24 , the load port 22 is located on the opposite side of the processing module 30 . The container 10 in which the substrates W are accommodated is placed on the load port 22 . A plurality of load ports 22 may be provided, and the plurality of load ports 22 may be disposed along the second direction 14 .

As the container 10, a closed container 10 such as a Front Open Unified Pod (FOUP) may be used. Vessel 10 may be placed in load port 22 by an operator or by a transfer means (not shown) such as an Overhead Transfer, Overhead Conveyor, or Automatic GuidedVehicle. have.

An index robot 2200 is provided inside the index frame 24 . A guide rail 2300 having a longitudinal direction in the second direction 14 is provided in the index frame 24 , and the index robot 2200 may be provided to be movable on the guide rail 2300 . The index robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 moves forward and backward, rotates about the third direction 16 , and moves in the third direction 16 . It may be provided to be movable along with it.

The processing module 30 performs a coating process and a developing process on the substrate W. The processing module 30 has an application block 30a and a developing block 30b. The application block 30a performs a coating process on the substrate W, and the developing block 30b performs a development process on the substrate W. A plurality of application blocks 30a are provided, and they are provided to be stacked on each other. A plurality of developing blocks 30b are provided, and the developing blocks 30b are provided to be stacked on each other. According to the embodiment of Fig. 2, two application blocks 30a are provided, and two development blocks 30b are provided. The application blocks 30a may be disposed below the developing blocks 30b. According to an example, the two application blocks 30a may perform the same process as each other, and may be provided in the same structure. Also, the two developing blocks 30b may perform the same process as each other, and may be provided in the same structure.

Referring to FIG. 4 , the application block 30a includes a heat treatment chamber 3200 , a transfer chamber 3400 , a liquid processing chamber 3600 , and a buffer chamber 3800 . The heat treatment chamber 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid processing chamber 3600 supplies a liquid on the substrate W to form a liquid film. The liquid film may be a photoresist film or an antireflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid treatment chamber 3600 in the application block 30a.

The transfer chamber 3400 is provided so that its longitudinal direction is parallel to the first direction 12 . The transfer chamber 3400 is provided with a transfer robot 3422 . The transfer robot 3422 transfers a substrate between the heat treatment chamber 3200 , the liquid processing chamber 3600 , and the buffer chamber 3800 . According to an example, the transfer robot 3422 has a hand 3420 on which the substrate W is placed, and the hand 3420 moves forward and backward, rotates about the third direction 16 , and the third direction. It may be provided movably along (16). A guide rail 3300 having a longitudinal direction parallel to the first direction 12 is provided in the transfer chamber 3400 , and the transfer robot 3422 may be provided movably on the guide rail 3300 . .

A plurality of heat treatment chambers 3200 are provided. The heat treatment chambers 3200 are arranged in a row along the first direction 12 . The heat treatment chambers 3200 are located at one side of the transfer chamber 3400 .

5 is a cross-sectional view illustrating a substrate processing apparatus according to an exemplary embodiment. The substrate processing apparatus of FIG. 5 may be one of the heating units 3230 provided in some of the thermal treatment chambers 3200 of FIG. 2 .

Referring to FIG. 5 , the substrate processing apparatus 500 includes a process chamber 510 , a support unit 530 , a heating unit 540 , a gas supply unit 550 , an exhaust unit 570 , and an air curtain member 560 . and an adsorption block 580 .

The process chamber 510 provides a processing space 501 therein. The process chamber 510 may be provided in a cylindrical shape. Alternatively, alternatively, it may be provided in a rectangular parallelepiped shape. The process chamber 510 includes an upper body 511 and a lower body 513 . The upper body 511 and the lower body 513 are combined with each other to have a processing space 501 therein.

The upper body 511 is provided in a circular shape when viewed from the top. The lower body 513 is located below the upper body 511 . The lower body 513 is provided in a circular shape when viewed from the top.

The driver 515 is connected to the upper body 511 . The driver 515 may move the upper body 511 up and down. When the substrate W is loaded into the process chamber 510 , the driver 515 moves the upper body 511 upward to open the process chamber 510 . The driver 515 seals the inside of the process chamber 510 by bringing the upper body 511 into contact with the lower body 513 during a process of processing the substrate W. In this embodiment, the driver 515 is provided in connection with the upper body 511 as an example, but unlike this, the driver 515 is connected to the lower body 513 to raise and lower the lower body 513. .

The support unit 530 supports the substrate W. The support unit 530 is located in the processing space 501 . The support unit 530 is provided in a circular shape when viewed from the top. The upper surface of the support unit 530 may have a larger cross-sectional area than the substrate W. The support unit 530 may be made of a material having good thermal conductivity. The support unit 530 may be made of a material having excellent heat resistance.

The heating unit 540 heats the substrate W placed on the support unit 530 . The heating unit 540 may be located inside the support unit 530 . For example, the heating unit 540 may be provided as a heater. A plurality of heaters may be provided inside the support unit 530 .

The gas supply unit 550 supplies gas to the substrate W located in the processing space 501 . The gas may be supplied to the processing space 501 during heating of the substrate W to improve the adhesion rate of the photoresist to the substrate W. According to an example, the gas may be hexamethyldisilazane (HMDS) gas. The HMDS gas can change the properties of the substrate W from hydrophilic to hydrophobic. In one example, the HMDS gas may be provided mixed with a carrier gas. In one example, the carrier gas may be provided as an inert gas. For example, the inert gas may be nitrogen.

The gas supply unit 550 includes a gas supply pipe 551 and a gas supply line 553 . It is connected to the central region of the upper body 511 of the gas supply pipe 551 . The gas supply pipe 551 supplies the gas transferred from the gas supply line 553 to the substrate W. A gas supply position to the gas supply pipe 551 is opposite to the central upper region of the substrate W.

The exhaust unit 570 exhausts the processing space 501 or the periphery of the processing space 501 . Here, the periphery of the processing space 501 is defined as a space between the upper body 511 and the lower body 513 .

The exhaust unit 570 includes an exhaust line 571 , an exhaust hole 572 , and a pressure reducing member 577 . The exhaust line 571 is connected to the exhaust hole 572 . The exhaust hole 572 is formed in the upper body 511 or the lower body 513 . For example, the exhaust hole 572 may be formed in the lower body 513 as shown in FIG. 5 . The exhaust hole 572 may be provided in the upper body 511 in a ring shape. Alternatively, the exhaust hole 572 may be provided with a plurality of holes. In one example, the exhaust line 571 may be provided in a number corresponding to the exhaust hole 572 . The decompression member 577 provides decompression during exhaust to the treatment space 501 and the treatment space 501 . For example, the pressure reducing member 577 may be provided as a pump. Alternatively, it may be provided with a known device providing reduced pressure.

The air curtain member 560 prevents an atmosphere inside the processing space 501 from flowing out and external air from flowing into the processing space 501 . In one example, the air curtain member 560 includes an air supply line 561 , a supply hole 562 , and an air supply source 567 . The air supply line 561 receives gas from the air supply source 567 and supplies it to the supply hole 562 . The supply hole 562 injects gas into the space between the upper body 511 and the lower body 513 . In one example, the gas is provided as nitrogen.

In one example, based on the support unit 530 , the exhaust unit 570 and the air curtain member 560 may be sequentially positioned.

The adsorption block 580 is provided in the upper body 511 or the lower body 513 adjacent to the gap between the upper body 511 and the lower body 513 . The adsorption block 580 prevents an outflow of the internal atmosphere of the processing space 501 and prevents water vapor from flowing into the processing space 501 . The adsorption block 580 may be made of a porous material. In one example, the adsorption block 580 is provided on the upper body 511 in a ring shape. The adsorption block 580 is disposed between the upper body 511 and the lower body 513 , so that the processing space 501 is surrounded by the upper body 511 , the lower body 513 , and the adsorption block 580 . can be defined.

Hereinafter, a method of processing the substrate W by the substrate processing apparatus 500 according to an embodiment of the present invention will be described with reference to FIG. 6 .

First, the substrate W transferred from the outside of the processing space 501 is seated on the support unit 530 . After the substrate W is transferred, the process chamber 510 is closed by the lowering of the upper body 511 . After the processing space 501 is sealed, the gas supply unit 550 supplies gas. The supplied adhesion gas may be supplied by mixing HMDS gas or HMDS and carrier gas.

When gas is supplied to the processing space 501 , the exhaust unit 570 exhausts the processing space 501 or around the processing space 501 . At this time, the pressure inside is properly maintained by controlling the pressure reducing member 577 and the gas supply unit 550 through a controller (not shown). In addition, the substrate W may be heated through the heating unit 540 during the process.

During the hydrophobization treatment by supplying HMDS to the treatment space 501, ammonia, a reaction product of HMDS, flows out through the gap between the upper body 511 and the lower body 513, and external water vapor flows between the upper body 511 and the lower body 511. Inflow into the gap between the bodies 513 occurs.

In order to prevent this, the adsorption block 580 of the present invention is provided adjacent to the gap between the upper body 511 and the lower body 513 . Ammonia generated in the processing space 501 and water vapor outside the processing space 501 are adsorbed by the adsorption block 580 provided with a porous material.

The porous material has a property of filling the empty space to lower the lattice energy, so that it adsorbs ammonia and water vapor around the adsorption block 580 so that the ammonia and water vapor do not escape between the gap between the upper body 511 and the lower body 513 . do. Accordingly, ammonia in the processing space 501 does not flow out of the processing space 501 , and external water vapor flowing into the processing space 501 is blocked.

In one example, the porous material may be provided as a zeolite or metal-organic frameworks (MOFs). Because zeolite has strong polarity, it has a high affinity for polar molecules, H2O and NH3, and effectively adsorbs water vapor and ammonia.

In the above example, the adsorption block 580 has been described as being made of a porous material. However, in another example, as shown in FIG. 7 , the adsorption block 580 may further include a ring-shaped blocking plate 585 formed of a porous material and provided between the inner circumferential surface and the outer circumferential surface. The blocking plate 585 prevents ammonia absorbed in one block 584 from escaping to the other block 582 . Alternatively, water vapor absorbed in the other block 582 is prevented from escaping to the one block 584 .

In the above-described example, it has been described that the adsorption block 580 is provided on the upper body 511 . However, in another example, the adsorption block 580 may be provided in the upper body 511 and the lower body 513 as shown in FIG. 8 .

According to the present invention, there is an advantage in that it is possible to prevent or minimize the intrusion of the air flow to the outside, and to prevent or minimize the gas in the processing space 501 from being discharged to the outside to contaminate the external environment. Accordingly, it is possible to minimize the effect on the contact angle between the substrate and the photoresist applied to the substrate after treating the substrate with the HMDS gas.

Further, according to the present invention, there is an advantage in that the effect of the exhaust amount of the exhaust unit or the air supply strength of the air curtain member on the substrate can be minimized.

Referring back to FIGS. 3 and 4 , a plurality of liquid processing chambers 3600 are provided. Some of the liquid processing chambers 3600 may be provided to be stacked on each other. The liquid processing chambers 3600 are disposed on one side of the transfer chamber 3402 . The liquid processing chambers 3600 are arranged side by side along the first direction 12 . Some of the liquid processing chambers 3600 are provided adjacent to the index module 20 . Hereinafter, these liquid treatment chambers will be referred to as a front liquid treating chamber 3602 (front liquid treating chamber). Other portions of the liquid processing chambers 3600 are provided adjacent to the interface module 40 . Hereinafter, these liquid treatment chambers are referred to as rear heat treating chambers 3604 (rear heat treating chambers).

The front stage liquid processing chamber 3602 applies the first liquid on the substrate W, and the rear stage liquid processing chamber 3604 applies the second liquid on the substrate W. The first liquid and the second liquid may be different types of liquid. According to one embodiment, the first liquid is an anti-reflection film, and the second liquid is a photoresist. The photoresist may be applied on the substrate W on which the anti-reflection film is applied. Optionally, the first liquid may be a photoresist, and the second liquid may be an anti-reflection film. In this case, the anti-reflection film may be applied on the photoresist-coated substrate (W). Optionally, the first liquid and the second liquid are the same type of liquid, and they may both be photoresist.

A plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are disposed between the index module 20 and the transfer chamber 3400 . Hereinafter, these buffer chambers will be referred to as a front buffer 3802 (front buffer). The front-end buffers 3802 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Another portion of the buffer chambers 3802 and 3804 is disposed between the transfer chamber 3400 and the interface module 40 below. These buffer chambers are referred to as rear buffer 3804 (rear buffer). The rear end buffers 3804 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Each of the front-end buffers 3802 and the back-end buffers 3804 temporarily stores a plurality of substrates W. As shown in FIG. The substrate W stored in the shear buffer 3802 is loaded or unloaded by the index robot 2200 and the transfer robot 3422 . The substrate W stored in the downstream buffer 3804 is carried in or carried out by the transfer robot 3422 and the first robot 4602 .

The developing block 30b has a heat treatment chamber 3200 , a transfer chamber 3400 , and a liquid treatment chamber 3600 . The heat treatment chamber 3200 , the transfer chamber 3400 , and the liquid treatment chamber 3600 of the developing block 30b are the heat treatment chamber 3200 , the transfer chamber 3400 , and the liquid treatment chamber 3600 of the application block 30a . ) and is provided in a structure and arrangement substantially similar to that of However, in the developing block 30b, all of the liquid processing chambers 3600 are provided as the developing chamber 3600 for processing the substrate by supplying a developer in the same manner.

The interface module 40 connects the processing module 30 to the external exposure apparatus 50 . The interface module 40 includes an interface frame 4100 , an additional process chamber 4200 , an interface buffer 4400 , and a transfer member 4600 .

A fan filter unit for forming a descending airflow therein may be provided at an upper end of the interface frame 4100 . The additional process chamber 4200 , the interface buffer 4400 , and the transfer member 4600 are disposed inside the interface frame 4100 . The additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the application block 30a, is loaded into the exposure apparatus 50 . Optionally, the additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the exposure apparatus 50 , is loaded into the developing block 30b. According to an example, the additional process is an edge exposure process of exposing an edge region of the substrate W, a top surface cleaning process of cleaning the upper surface of the substrate W, or a lower surface cleaning process of cleaning the lower surface of the substrate W can A plurality of additional process chambers 4200 may be provided, and they may be provided to be stacked on each other. All of the additional process chambers 4200 may be provided to perform the same process. Optionally, some of the additional process chambers 4200 may be provided to perform different processes.

The interface buffer 4400 provides a space in which the substrate W transferred between the application block 30a, the additional process chamber 4200, the exposure apparatus 50, and the developing block 30b temporarily stays during the transfer. A plurality of interface buffers 4400 may be provided, and a plurality of interface buffers 4400 may be provided to be stacked on each other.

According to an example, the additional process chamber 4200 may be disposed on one side of the transfer chamber 3400 along the lengthwise extension line, and the interface buffer 4400 may be disposed on the other side thereof.

The transfer member 4600 transfers the substrate W between the coating block 30a, the addition process chamber 4200, the exposure apparatus 50, and the developing block 30b. The transfer member 4600 may be provided as one or a plurality of robots. According to an example, the conveying member 4600 has a first robot 4602 and a second robot 4606 . The first robot 4602 transfers the substrate W between the application block 30a, the additional process chamber 4200, and the interface buffer 4400, and the interface robot 4606 uses the interface buffer 4400 and the exposure apparatus ( 50), and the second robot 4604 may be provided to transfer the substrate W between the interface buffer 4400 and the developing block 30b.

The first robot 4602 and the second robot 4606 each include a hand on which the substrate W is placed, and the hand moves forward and backward, rotates about an axis parallel to the third direction 16, and It may be provided to be movable along three directions (16).

The hands of the index robot 2200 , the first robot 4602 , and the second robot 4606 may all have the same shape as the hands 3420 of the transfer robots 3422 and 3424 . Optionally, the hand of the robot directly exchanging the substrate W with the transfer plate 3240 of the heat treatment chamber is provided in the same shape as the hand 3420 of the transfer robots 3422 and 3424, and the hands of the remaining robots have a different shape. can be provided as

According to one embodiment, the index robot 2200 is provided to directly exchange the substrate W with the heating unit 3230 of the shear heat treatment chamber 3200 provided in the application block 30a.

In addition, the transfer robot 3422 provided in the application block 30a and the developing block 30b may be provided to directly transfer the substrate W with the transfer plate 3240 located in the heat treatment chamber 3200 .

The above detailed description is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are possible. Accordingly, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

500: substrate processing device
510: process chamber
530: support unit
540: heating unit
550: gas supply unit
560: air curtain member
570: exhaust unit
580: adsorption block

Claims (12)

An apparatus for processing a substrate, comprising:
a process chamber having an upper body and a lower body having a processing space therein in combination with each other;
a gas supply unit supplying gas to the processing space;
a support unit positioned in the processing space to support a substrate;
a heating unit provided to heat a substrate placed on the support unit; And
and an adsorption block provided adjacent to a gap between the upper body and the lower body in the upper body or the lower body,
The adsorption block is a substrate processing apparatus provided with a porous material. delete According to claim 1,
The porous material is a substrate processing apparatus including a zeolite or metal-organic frameworks (MOFs). An apparatus for processing a substrate, comprising:
a process chamber having an upper body and a lower body having a processing space therein in combination with each other;
a gas supply unit supplying gas to the processing space;
a support unit positioned in the processing space to support a substrate;
a heating unit provided to heat a substrate placed on the support unit; And
and an adsorption block provided adjacent to a gap between the upper body and the lower body in the upper body or the lower body,
The gas supplied from the gas supply unit may include hexamethyldisilazane (HMDS). 5. The method of any one of claims 1 and 3 to 4,
The adsorption block is
A substrate processing apparatus provided in a ring shape. 6. The method of claim 5,
The adsorption block is
The substrate processing apparatus further comprising a ring-shaped blocking plate provided between the inner circumferential surface and the outer circumferential surface. 5. The method of any one of claims 1 and 3 to 4,
The adsorption block is disposed between the upper body and the lower body, and the processing space is defined by being surrounded by the upper body, the lower body, and the adsorption block. 5. The method of any one of claims 1 and 3 to 4,
The adsorption block is
A substrate processing device made of a material that can easily adsorb polar substances. In the method of processing a substrate using the substrate processing apparatus of claim 1 or 4,
Hydrophobizing the surface of the substrate by supplying a hexamethyldisilazane (HMDS) gas to the processing space to prevent the outflow of the internal atmosphere of the processing space and prevent water vapor from flowing into the processing space,
A substrate processing method in which ammonia generated in the processing space is prevented from flowing out of the processing space by an adsorption block during the hydrophobization treatment and external water vapor is blocked into the processing space. 10. The method of claim 9,
The adsorption block is
A method of processing a substrate provided in a ring shape. 11. The method of claim 10,
The adsorption block is
The substrate processing method further comprising a ring-shaped blocking plate provided between the inner circumferential surface and the outer circumferential surface. 10. The method of claim 9,
The adsorption block is disposed between the upper body and the lower body, and the processing space is defined by being surrounded by the upper body, the lower body, and the adsorption block.

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