KR102273964B1 - Forming method for hydrophobic thin film based on aminosilane precursor - Google Patents

Abstract

The present invention relates to a method for forming a hydrophobic thin film, the method for forming a hydrophobic thin film according to an embodiment comprises the steps of exposing an aminosilane-based precursor gas containing at least two or more silicon (Si, Silicon) elements on a substrate; It may include purging the aminosilane-based precursor gas from the chamber, exposing the reaction gas on the substrate to deposit a hydrophobic thin film on the substrate, and purging the reaction gas from the chamber.

Description

Method of forming a hydrophobic thin film based on an aminosilane-based precursor {FORMING METHOD FOR HYDROPHOBIC THIN FILM BASED ON AMINOSILANE PRECURSOR}

The present invention relates to a method for forming a hydrophobic thin film, and more particularly, to a technical idea of forming a hydrophobic thin film using an aminosilane-based precursor.

The phenomenon that occurs when a liquid meets a solid surface is called wettability, and at this time, two major phenomena occur. Specifically, when the liquid is water, the property that the contact angle with the surface becomes low when wet with the surface is called hydrophilicity, and the property that the contact angle with the surface increases due to the formation of water droplets without wetness is called hydrophobicity.

Technologies related to hydrophobic properties are widely used in various traditional industries such as paints, adhesives, textiles, fine chemicals, electrical and electronics, automobiles and metals and glass for the purpose of imparting functionality such as water repellency, oil repellency, antifouling, lubricity, non-adhesiveness, low surface tension It is used, and in the aforementioned industrial field, efforts are being made to realize and apply a solid surface with hydrophobic properties.

On the other hand, superhydrophobicity, which shows superior hydrophobicity, is a kind of super water repellency and super oil repellency. Industrially, it is an oil repellent processing agent in the paper industry, functional fiber and leather industry in the cosmetic industry, etc. In addition to being utilized, corrosion protection of metal materials, prevention of freezing of fuselage during aircraft operation, prevention of weathering of civil and construction structures, which are expensively invested, prevention of adhesion of shellfish and shellfish on ships in the shipbuilding industry, exterior coating of automobiles, the idea of heat exchange machinery It is widely applied to anti-frost and precision release technology in the polymer processing field.

Until now, most of the technologies related to superhydrophobic properties were generally applied to industrial fields such as architecture, machinery, and shipbuilding, but recently, as the importance of superhydrophobic thin films for ultra-precision electrical and electronic fields such as semiconductors, LCDs, MEMS, and optics has emerged, electronic components The field of application is expanding further, such as improving the quality and performance of the product, and securing stability.

Until now, research conducted to control surface energy has been actively conducted focusing on hydrophobic polymers that are easy to coat and inexpensive. However, controlling the wettability of a polymer material only implements hydrophilicity and hydrophobicity, and there is a limit in which fine wettability control is impossible.

In particular, in a special environment where the use of polymers is difficult, the introduction of inorganic materials such as metal oxides is inevitable. However, most metal oxides including silicon oxide (SiO _x , Silicon oxide) have hydrophilic properties, and metal oxides with hydrophobic properties are very limited. In addition, there is a problem in that hydrophobic properties are lost under harsh environments such as high temperature and UV exposure.

Korean Patent Registration No. 10-0618804 "Method of forming a selective atomic layer deposition film using hydrophobicization process"

An object of the present invention is to provide a method of forming a hydrophobic thin film capable of easily forming a hydrophobic thin film in a low-temperature region including room temperature.

In addition, the present invention is to provide a method of forming a hydrophobic thin film capable of forming a hydrophobic surface harmless to the human body at low cost through a _{relatively inexpensive silicon oxide (SiO x ).}

In addition, an object of the present invention is to provide a method of forming a hydrophobic thin film exhibiting excellent hydrophobic properties even when formed to a very thin thickness.

In addition, an object of the present invention is to provide a method of forming a hydrophobic thin film capable of uniformly performing a hydrophobic coating on a biomaterial or nanostructure.

A method of forming a hydrophobic thin film according to an embodiment comprises the steps of exposing an aminosilane-based precursor gas containing at least two or more silicon (Si, Silicon) elements on a substrate, purging the aminosilane-based precursor gas from a chamber; , depositing a hydrophobic thin film on the substrate by exposing the reaction gas on the substrate, and purging the reaction gas from the chamber.

According to one side, the aminosilane-based precursor gas may include a silicon (Si)-nitrogen (N) bond and a silicon (Si)-silicon (Si) bond.

According to one side, the aminosilane-based precursor gas may be a gas represented by Chemical Formula 1 below.

[Formula 1]

Si _n X _2n (N(R ₁ R ₂ ))(N(R ₃ R ₄ ))

Here, n is a natural number of 2 or more, X includes _{at least one of H, F, Cl, Br, I and CF 3} , R1 to R4 include C _α H _{2α + 1} , and α is a natural number of 1 or more can

According to one side, the step of depositing the hydrophobic thin film may deposit the hydrophobic thin film on the substrate at a temperature of 28 °C to 100 °C.

According to one side, the step of depositing the hydrophobic thin film may form a hydrophobic thin film on the substrate to a thickness of 1 nm to 20 nm.

According to one side, the method of forming the hydrophobic thin film includes the steps of exposing the aminosilane-based precursor gas, purging the aminosilane-based precursor gas from the chamber, depositing the hydrophobic thin film, and purging the reaction gas from the chamber sequentially. The performed deposition cycle may be repeated at least once or more.

According to one side, the substrate is silicon (Si, Silicon), aluminum oxide (Al ₂ O ₃ , aluminum oxide), magnesium oxide (MgO, Magnesium oxide), silicon carbide (SiC, Silicon carbide), silicon nitride (SiN, Silicon nitride) , Glass, Quartz, Sapphire, Graphite, Graphene, Polyimide (PI, Polyimide), Polyester (PE, Polyester), Polyethylene Naphthalate (PEN, Poly) (2,6-ethylenenaphthalate)), polymethyl methacrylate (PMMA, Polymethyl methacrylate), polyurethane (PU, Polyurethane), fluoropolymer (FEP, Fluoropolymers), polyethylene terephthalate (PET), cotton (Cotton) , Cellulose, Silk, Wool, Kevlar, Nylon, Carbon Fiber, Conductive textile containing carbon, Nano wire of 3D structure, It may include at least one of a nano dot of a three-dimensional structure, a powder of a three-dimensional structure, a plastic, and a bio-bio-device.

According to one side, the reaction gas may include ozone (O ₃ , Ozone).

According to one side, the hydrophobic thin film may be a _{silicon oxide (SiO x ) thin film having hydrophobic properties or superhydrophobic properties.}

According to one side, the hydrophobic thin film may have hydrophobic properties when the contact angle between the liquid and the hydrophobic thin film is 90° to 149°, and may have superhydrophobic properties when the contact angle is 150° or more.

According to an embodiment, the hydrophobic thin film may be easily formed in a low temperature region including room temperature.

According to an embodiment, a hydrophobic surface harmless to the human body may be formed at a low cost through _{relatively inexpensive silicon oxide (SiO x ).}

According to an embodiment, a hydrophobic thin film exhibiting excellent hydrophobic properties can be formed even when it is formed to a very thin thickness.

According to one embodiment, the hydrophobic coating may be uniformly performed on the biomaterial or the nanostructure.

1 is a view for explaining a method of forming a hydrophobic thin film according to an embodiment.
2A to 2C are diagrams for explaining the growth rate characteristics of a hydrophobic thin film according to an embodiment.
3A to 3B are diagrams for explaining hydrophobic properties according to a change in a substrate of a hydrophobic thin film according to an exemplary embodiment.
4A to 4B are diagrams for explaining hydrophobic properties according to temperature and thickness changes of a hydrophobic thin film according to an embodiment.
5A to 5B are diagrams for explaining the contact characteristics according to the liquid change of the hydrophobic thin film according to an embodiment.
6 is a view for explaining the low-temperature hydrophobicity of the hydrophobic thin film according to an embodiment.
7 is a view for explaining the thermal stability of the hydrophobic thin film according to an embodiment.
8A to 8B are diagrams for explaining light transmittance characteristics of a hydrophobic thin film according to an embodiment.
9 is a view for explaining a correlation between the roughness and hydrophobic properties of the hydrophobic thin film according to an embodiment.

Specific structural or functional descriptions of the embodiments according to the concept of the present invention disclosed herein are only exemplified for the purpose of explaining the embodiments according to the concept of the present invention, and the embodiment according to the concept of the present invention These may be embodied in various forms and are not limited to the embodiments described herein.

Since the embodiments according to the concept of the present invention may have various changes and may have various forms, the embodiments will be illustrated in the drawings and described in detail herein. However, this is not intended to limit the embodiments according to the concept of the present invention to specific disclosed forms, and includes changes, equivalents, or substitutes included in the spirit and scope of the present invention.

Terms such as first or second may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one element from another element, for example, without departing from the scope of rights according to the concept of the present invention, a first element may be named as a second element, Similarly, the second component may also be referred to as the first component.

When a component is referred to as being “connected” or “connected” to another component, it is understood that the other component may be directly connected or connected to the other component, but other components may exist in between. it should be On the other hand, when it is mentioned that a certain element is "directly connected" or "directly connected" to another element, it should be understood that the other element does not exist in the middle. Expressions describing the relationship between elements, for example, “between” and “between” or “directly adjacent to”, etc., should be interpreted similarly.

The terminology used herein is used only to describe specific embodiments, and is not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In this specification, terms such as "comprise" or "have" are intended to designate that the described feature, number, step, operation, component, part, or combination thereof exists, and includes one or more other features or numbers, It should be understood that the possibility of the presence or addition of steps, operations, components, parts or combinations thereof is not precluded in advance.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present specification. does not

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, the scope of the patent application is not limited or limited by these examples. Like reference numerals in each figure indicate like elements.

1 is a view for explaining a method of forming a hydrophobic thin film according to an embodiment.

Referring to FIG. 1 , the method of forming a hydrophobic thin film according to an embodiment can easily form a hydrophobic surface in a low-temperature region including room temperature, and is relatively inexpensive to the human body through low-cost _{silicon oxide (SiO x ).} A harmless hydrophobic surface can be formed.

In addition, the method for forming a hydrophobic thin film according to an embodiment can exhibit excellent hydrophobic properties even when the hydrophobic thin film is formed with a very thin thickness, and can uniformly perform a hydrophobic coating on a biomaterial or nanostructure.

Hereinafter, the method of forming a hydrophobic thin film described with reference to FIG. 1 is an atomic layer deposition method (ALD) in which a precursor gas and a reactant gas are sequentially sprayed to perform self-limiting growth on the surface of the thin film. , atomic layer deposition).

Specifically, in step 110 , the method of forming a hydrophobic thin film according to an embodiment may expose an aminosilane-based precursor gas including at least two or more silicon (Si, Silicon) elements on a substrate.

According to one side, the aminosilane-based precursor gas may be a gas represented by the following Chemical Formula 1 including a silicon (Si)-nitrogen (N) bond and a silicon (Si)-silicon (Si) bond.

[Formula 1]

Si _n X _2n (N(R ₁ R ₂ ))(N(R ₃ R ₄ ))

Here, n is a natural number of 2 or more, X includes _{at least one of H, F, Cl, Br, I and CF 3} , R1 to R4 include C _α H _{2α + 1} , and α is a natural number of 1 or more can

For example, R1 to R4 are CH ₃ , C ₂ H ₅ , C ₃ H ₇ may be at least one of, and R1 to R4 may be identical to each other, but may not be identical to each other.

According to one side, the aminosilane-based precursor gas according to an embodiment described through Chemical Formula 1 is ozone (O ₃ ) in the low temperature range of 100 °C or less, except for the reactive amide group. It has no reactivity with water and no affinity with water, so it can be implemented as an element that induces a high contact angle.

On the other hand, the aminosilane-based precursor gas according to the embodiment described through Formula 1 may secure a hydrophobic property by applying a silane structure other than the silane structure.

Preferably, the aminosilane-based precursor gas may be an aminodisilane precursor gas represented by Chemical Formula 2 below.

[Formula 2]

On the other hand, the substrate is silicon (Si, Silicon), aluminum oxide (Al ₂ O ₃ , aluminum oxide), magnesium oxide (MgO, Magnesium oxide), silicon carbide (SiC, Silicon carbide), silicon nitride (SiN, Silicon nitride), glass (Glass), Quartz, Sapphire, Graphite, Graphene, Polyimide (PI, Polyimide), Polyester (PE, Polyester), Polyethylene Naphthalate (PEN, Poly(2) ,6-ethylenenaphthalate)), Polymethyl methacrylate (PMMA, Polymethyl methacrylate), Polyurethane (PU, Polyurethane), Fluoropolymers (FEP, Fluoropolymers), Polyethyleneterephthalate (PET), Cotton (Cotton), Cellulose (Cellulose), Silk, Wool, Kevlar, Nylon, Carbon Fiber, Carbon-containing conductive textile, Nano wire of 3D structure, 3D It may include at least one of a nano dot of a structure, a powder of a three-dimensional structure, a plastic, and a bio-biological device.

Next, in step 120 , in the method of forming the hydrophobic thin film according to the embodiment, the aminosilane-based precursor gas may be purged from the chamber.

Next, in step 130 , the method of forming the hydrophobic thin film according to an embodiment may deposit a hydrophobic thin film on the substrate by exposing a reactive gas on the substrate.

According to one side, the method of forming the hydrophobic thin film according to the embodiment in step 130 may deposit the hydrophobic thin film on the substrate at a temperature of 28 °C to 100 °C.

In other words, the method of forming the hydrophobic thin film according to an embodiment can easily form the hydrophobic thin film in a low-temperature region including room temperature.

In addition, the reaction gas may _{include at least one of oxygen (O 2} ), ozone (O ₃ ), nitrogen monoxide (NO), and nitrous oxide (N ₂ O), but preferably, ozone may be used as the reaction gas. have.

More specifically, the present invention can maintain the hydrophobicity of the thin film by removing all the amide ligands depending on the precursor using ozone through the ALD process, and maintaining the existing H-termination.

On the other hand, the hydrophobic thin film may be a silicon oxide (SiO _x ) thin film having hydrophobic properties or superhydrophobic properties, and preferably, the hydrophobic thin film is a silicon dioxide (SiO ₂ ) thin film having hydrophobic properties or superhydrophobic properties.

Next, in step 140 , in the method of forming the hydrophobic thin film according to an embodiment, the reaction gas may be purged from the chamber.

According to one side, the hydrophobic thin film may be a thin film having hydrophobic properties when the contact angle between the liquid and the hydrophobic thin film is 90° to 149°, and when the contact angle is 150° or more, it may be a thin film having superhydrophobic properties.

According to one side, in the method of forming a hydrophobic thin film according to an embodiment in step 150, if the hydrophobic thin film deposited on the substrate does not reach a preset thickness, step 110 may be re-performed.

More specifically, the method of forming a hydrophobic thin film according to an embodiment includes a step 110 of exposing an aminosilane-based precursor gas, a step 120 of purging the aminosilane-based precursor gas from the chamber, a step 130 of depositing a hydrophobic thin film, and a reaction gas. The deposition cycle in which step 140 of purging from the chamber is sequentially performed may be repeated at least once or more.

In other words, in the method of forming the hydrophobic thin film according to an embodiment, the deposition thickness of the hydrophobic thin film may be gradually increased by repeating the deposition cycle, and the deposition thickness of the hydrophobic thin film deposited on the substrate may reach a preset thickness. The deposition cycle may be repeated until the

Preferably, the hydrophobic thin film may be formed on the substrate to a thickness of 1 nm to 20 nm, but the thickness of the hydrophobic thin film is not limited to the above-described examples, and may be formed to a thickness of 1 nm or more.

2A to 2C are diagrams for explaining the growth rate characteristics of a hydrophobic thin film according to an embodiment.

Referring to FIGS. 2A to 2C , reference numerals 210 to 230 denote experimental results for a silicon oxide thin film having hydrophobic properties formed through the method of forming a hydrophobic thin film according to an embodiment.

Specifically, reference numeral 210 denotes the growth rate of the hydrophobic thin film according to the exposure time of the precursor, 220 denotes the thickness of the hydrophobic thin film according to the number of deposition cycles, and reference numeral 230 denotes the growth rate of the hydrophobic thin film according to the deposition temperature.

More specifically, according to reference numerals 210 to 230, as a result of growing the thin film through the method for forming a hydrophobic thin film according to an embodiment, a surface saturation reaction can be confirmed in a low temperature region of 50 °C to 100 °C. could

In addition, it was confirmed that the method of forming the hydrophobic thin film according to an embodiment is a process without initial nucleation delay by securing linearity, and the growth rate of the thin film increases as the deposition temperature increases. could

3A to 3B are diagrams for explaining hydrophobic properties according to a change in a substrate of a hydrophobic thin film according to an exemplary embodiment.

3A to 3B, reference numerals 310 to 320 indicate that 10 uL of water is dropped on the surface of a silicon oxide thin film having hydrophobic properties grown on a substrate through a method of forming a hydrophobic thin film according to an embodiment. , shows the results of the experiment to check the contact angle between the thin film and water.

Specifically, reference numeral 310 denotes a contact angle test result of a thin film grown on a silicon (Si) substrate at deposition temperatures of 50°C and 150°C, respectively, and reference numeral 320 denotes 50 on a nanowire substrate. The contact angle experimental results of the thin films grown at the deposition temperatures of °C and 150 °C, respectively, are shown.

More specifically, according to reference numeral 310, in the case of a thin film grown at a deposition temperature of 50 ° C, it was possible to confirm excellent hydrophobic properties with a surface contact angle of 95 °, but in the case of a thin film grown at 150 °, the contact angle was 40 ° to 50 ° °, it was possible to confirm the surface characteristics of a general hydrophilic thin film.

On the other hand, according to reference numeral 320, in the case of the thin film grown on the nanowire substrate, which is a three-dimensional structure, excellent superhydrophobic properties with a surface contact angle exceeding 160° at a deposition temperature of 50°C were confirmed.

That is, it was found that the method of forming a hydrophobic thin film according to an embodiment can form a thin film having hydrophobic properties through a low-temperature process.

4A to 4B are diagrams for explaining hydrophobic properties according to temperature and thickness changes of a hydrophobic thin film according to an embodiment.

4A to 4B, reference numeral 410 denotes a contact angle characteristic according to a change in thickness of a hydrophobic thin film formed through a method of forming a hydrophobic thin film according to an embodiment, and reference numeral 420 denotes a temperature change of the hydrophobic thin film. It shows the contact angle characteristic.

More specifically, according to reference numeral 410, the contact angle on the surface of the substrate on which the thin film is not deposited is about 40°, which shows the hydrophilic properties of a general silicon substrate, but when the thin film is deposited by about 0.3 nm, the contact angle rapidly rises to 80° or more. It was confirmed that when the thickness of the thin film increased to 1 nm or more, the contact angle became 95° or more.

In other words, it was found that the hydrophobic thin film according to an embodiment has hydrophobicity in a thickness region of at least 1 nm or more.

On the other hand, according to reference numeral 420, the thin film formed at the deposition temperature of 28 °C, 50 °C and 75 °C, which is room temperature, showed a high contact angle of 90 ° or more, but the contact angle of the thin film formed at the deposition temperature of 100 ° C or more was remarkable. It was confirmed that the thin film formed at a deposition temperature of 150°C or higher showed a contact angle of about 50°, showing hydrophilic properties.

That is, it was found that the method of forming a hydrophobic thin film according to an embodiment can form a thin film having high hydrophobicity when the deposition process is performed at a low temperature of 100 °C or less.

5A to 5B are diagrams for explaining the contact characteristics according to the liquid change of the hydrophobic thin film according to an embodiment.

5A to 5B, reference numeral 510 denotes a distance between a silicon oxide thin film and blood formed on a nanowire substrate to a thickness of about 20 nm at a deposition temperature of 50 °C through a method of forming a hydrophobic thin film according to an embodiment. A contact angle characteristic is indicated, and reference numeral 520 indicates a contact angle characteristic between the above-described thin film and a 10 wt% ethanol aqueous solution.

More specifically, according to reference numerals 510 to 520, it was confirmed that both liquids exhibited contact characteristics with a contact angle of 160° or more.

As is generally known, water has a surface tension of about 72 mN/m, but liquids with a surface tension lower than this require a surface coating with a lower surface energy to secure contact properties of 160° or more. .

On the other hand, the thin film produced through the method of forming a hydrophobic thin film according to an embodiment has a surface tension of less than 160° in both blood (~ 55 mN/m) and 10 wt% of an aqueous ethanol solution (~ 47 mN/m). It was confirmed that the contact properties were shown, and through this, it was confirmed that the hydrophobic thin film according to an embodiment showed excellent contact properties through low surface energy.

6 is a view for explaining the low-temperature hydrophobicity of the hydrophobic thin film according to an embodiment.

Referring to FIG. 6 , reference numeral 600 denotes a space between a silicon oxide thin film having hydrophobic properties and water formed on a slide glass substrate having hydrophilic properties at a deposition temperature of 50 °C through a method of forming a hydrophobic thin film according to an embodiment. The results of experiments to confirm the contact angle characteristics are shown.

More specifically, according to reference numeral 600, it was confirmed that the solution spreads widely due to high hydrophilicity before coating the slide glass substrate as a thin film, but it was confirmed that the contact angle of water increased after coating.

That is, the method of forming a hydrophobic thin film according to an embodiment forms a hydrophobic thin film through a process at a low deposition temperature, so that it can be used in various fields such as generally used silicon substrates and glass substrates, as well as plastics and biomaterials that are weak to heat. It has been shown that hydrophobic coating is possible, and a thin film having excellent hydrophobic properties can be coated at a relatively low cost compared to the existing technology.

7 is a view for explaining the thermal stability of the hydrophobic thin film according to an embodiment.

Referring to FIG. 7 , reference numeral 700 denotes an experiment to confirm the thermal stability of a silicon oxide thin film having hydrophobic properties formed through the method of forming a hydrophobic thin film according to an embodiment under different heating conditions and vacuum and atmospheric environments show the results.

More specifically, according to reference numeral 700, it was confirmed that the contact angle of the thin film was maintained up to 350 °C in vacuum and atmospheric conditions.

That is, it was found that the thin film formed by the method of forming the hydrophobic thin film according to the embodiment has excellent thermal stability.

8A to 8B are diagrams for explaining light transmittance characteristics of a hydrophobic thin film according to an embodiment.

8A to 8B, reference numerals 810 to 820 denote transmittance of a silicon oxide thin film having a hydrophobic property formed on a slide glass substrate to a thickness of 20 nm through a method of forming a hydrophobic thin film according to an embodiment of an experiment show the results.

More specifically, according to reference numerals 810 to 820, it was confirmed that the hydrophobic thin film according to an embodiment has excellent transmittance, and transmittance is improved by about 0.5% compared to the conventional glass substrate, which is the surface roughness through thin film deposition. was improved and the transmittance of the thin film was further increased.

That is, it was confirmed that the thin film formed by the method of forming the hydrophobic thin film according to the embodiment showed excellent hydrophobic coating properties without impairing the characteristics according to the color or transparency of the device.

9 is a view for explaining a correlation between the roughness and hydrophobic properties of the hydrophobic thin film according to an embodiment.

Referring to FIG. 9 , reference numeral 900 denotes a surface roughness of a silicon oxide thin film having hydrophobic properties formed at deposition temperatures of 50 °C, 100 °C and 150 °C through the method of forming a hydrophobic thin film according to an embodiment. (Surface roughness) The result of the experiment to confirm the characteristic is shown.

More specifically, according to reference numeral 900, when the hydrophobic property appears in a generally hydrophilic object, the roughness of the thin film surface sharply increases, so that the Cassie-baxter model between water and the substrate surface is followed.

Therefore, as a result of confirming the surface roughness of the thin film through atomic force microscopy (AFM) analysis to confirm whether the hydrophobic property of the thin film is a characteristic of the surface roughness, the hydrophobic thin film according to an embodiment is It was confirmed that the roughness of 0.23 nm was exhibited.

That is, it was confirmed that the hydrophobic property of the thin film formed by the method of forming the hydrophobic thin film according to the embodiment is not due to the roughness of the thin film, but is due to the hydrophobicity (hydrogen termination) of the thin film surface.

As a result, using the present invention, it is possible to easily form a hydrophobic thin film in a low-temperature region including room temperature.

In addition, the present invention can form a hydrophobic surface harmless to the human body at a low cost through a _{relatively inexpensive silicon oxide (SiO x ).}

In addition, the present invention can form a hydrophobic thin film exhibiting excellent hydrophobic properties even when formed to a very thin thickness.

On the other hand, the present invention can uniformly perform the hydrophobic coating on the biomaterial or nanostructure.

As described above, although the embodiments have been described with reference to the limited drawings, various modifications and variations are possible by those skilled in the art from the above description. For example, the described techniques are performed in a different order than the described method, and/or the described components of the system, structure, apparatus, circuit, etc. are combined or combined in a different form than the described method, or other components Or substituted or substituted by equivalents may achieve an appropriate result.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

110: exposing an aminosilane-based precursor gas
120: purging the aminosilane-based precursor gas from the chamber
130: depositing a hydrophobic thin film
140: purging the reaction gas from the chamber

Claims (10)

exposing an aminosilane-based precursor gas containing at least two or more silicon (Si, Silicon) elements on a biomaterial or nanostructure-based substrate for 3 to 6 seconds;
purging the aminosilane-based precursor gas from the chamber;
depositing a hydrophobic thin film on the substrate by exposing a reactive gas on the substrate; and
purging the reaction gas from the chamber.
including,
The substrate is cotton (Cotton), cellulose (Cellulose), silk (Silk) wool (Wool), Kevlar (Kevlar), bio nylon (Nylon), bio plastic, bio bio-device, 3D structure nano wire (Nano wire) , comprising at least one of the three-dimensional structure of the nano dot (Nano dot) and the three-dimensional structure of the powder (Powder),
In the step of depositing the hydrophobic thin film, the hydrophobic thin film is deposited on the substrate at a temperature of 28 °C to 75 °C, and the amide ligand contained in the aminosilane-based precursor gas is used as the reaction gas, ozone ( O ₃ , A method of forming a hydrophobic thin film that is completely removed through Ozone). According to claim 1,
The aminosilane-based precursor gas includes a silicon (Si)-nitrogen (N) bond and a silicon (Si)-silicon (Si) bond
A method of forming a hydrophobic thin film. According to claim 1,
The aminosilane-based precursor gas is a gas represented by the following Chemical Formula 1
[Formula 1]

Si _n X _2n (N(R ₁ R ₂ ))(N(R ₃ R ₄ ))
Here, n is a natural number of 2 or more, X includes _{at least one of H, F, Cl, Br, I and CF 3} , R1 to R4 include C _α H _{2α + 1} , and α is a natural number of 1 or more
A method of forming a hydrophobic thin film. delete According to claim 1,
The step of depositing the hydrophobic thin film is
forming the hydrophobic thin film on the substrate to a thickness of 1 nm to 20 nm
A method of forming a hydrophobic thin film. According to claim 1,
A deposition cycle in which exposing the aminosilane-based precursor gas, purging the aminosilane-based precursor gas from the chamber, depositing the hydrophobic thin film, and purging the reaction gas from the chamber are sequentially performed. repeated at least once
A method of forming a hydrophobic thin film. delete delete According to claim 1,
The hydrophobic thin film is a silicon oxide (SiO _x ) thin film having hydrophobic properties or superhydrophobic properties.
A method of forming a hydrophobic thin film. 10. The method of claim 9,
The hydrophobic thin film has the hydrophobic property when the contact angle between the liquid and the hydrophobic thin film is 90° to 149°, and has the superhydrophobic property when the contact angle is 150° or more
A method of forming a hydrophobic thin film.

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