KR102269139B1 - Display apparatus and organic luminescense display apparatus - Google Patents

Abstract

The present invention provides a pad structure for improving bonding defects, comprising: a substrate; a first wiring formed on the substrate; a first pad electrically connected to the first wiring and formed on the same layer as the first wiring; a second wiring formed on another layer with the first wiring and an insulating layer interposed therebetween; a second pad formed on the same layer as the first pad; and a connection part electrically connecting the second wire and the second pad. It provides a display device comprising a.

Description

Display device and organic light emitting display device {DISPLAY APPARATUS AND ORGANIC LUMINESCENSE DISPLAY APPARATUS}

The present invention relates to a display device and an organic light emitting display device including pads disposed in a non-display area around a display area in which an image is displayed.

2. Description of the Related Art In recent years, a display device is being replaced with a portable thin flat panel display device. A flat panel display includes a liquid crystal display as a light-receiving display, and an organic light emitting display and a plasma display as a light-emitting display.

Such a flat panel display is divided into a display area in which an image is displayed on a substrate and a non-display area around the display area. In the non-display area, pads connecting to the driver IC and wirings connecting the display area and the pads are provided.

The driver IC is bonded to the pads using an adhesive containing a conductive material. However, when the thickness of the insulating film formed under the pads is different, there is a problem in that a difference in height occurs between the pads, resulting in a bonding defect between the driver IC and the pads.

The present invention relates to a display device and an organic light emitting display device, which disclose a structure of pads for improving the above-described bonding defect.

According to an embodiment of the present invention for solving the above problems, the substrate; a first wiring formed on the substrate; a first pad electrically connected to the first wiring and formed on the same layer as the first wiring; a second wiring formed on another layer with the first wiring and an insulating layer interposed therebetween; a second pad formed on the same layer as the first pad; and a connection part electrically connecting the second wire and the second pad. Disclosed is a display device comprising a.

A plurality of the first wirings and a plurality of the second wirings are alternately disposed.

* A plurality of the first pads and a plurality of the second pads are alternately disposed.

The first wiring and the first pad are integrally formed.

first and second insulating layers including first openings exposing a portion of the first pad; and a first protective layer covering the first pad exposed through the first opening. further includes

first and second insulating layers including a second opening exposing a portion of the second pad; and a second protective layer covering the second pad exposed through the second opening. further includes

The second insulating layer covers the second wiring and includes a contact hole for connecting the second wiring and the connection part, and the connection part is integrally formed with the second protective layer.

a first insulating layer including a first opening exposing a portion of the first pad; and a first protective layer covering the first pad exposed through the first opening. further includes

a first insulating layer including a second opening exposing a portion of the second pad; and a second protective layer covering the second pad exposed through the second opening. further includes

A second insulating layer and the first insulating layer are formed on the second wiring, and the first and second insulating layers include a contact hole for connecting the second wiring and the connection part, and the connection part is the It is formed integrally with the second protective layer.

One end of the first wiring and the second wiring is connected to a display area displaying an image.

According to an embodiment of the present invention for solving the above problems, there is provided a substrate comprising: a substrate partitioned into a display area on which an image is displayed and a non-display area around the display area; a plurality of first gate lines formed in the display area and extending in a first direction; a plurality of second gate lines formed in the display area, insulated by the first gate line and a first insulating layer, and extending in a second direction; a plurality of data lines formed in the display area, insulated by the second gate line and a second insulating layer, and extending in a second direction crossing the first direction; a pixel including a driving circuit part electrically connected to the first gate line or the second gate line and the data line; an organic light emitting device included in the pixel and electrically connected to the driving circuit unit to emit light; pads disposed in the non-display area; and wires connecting the pads and the display area. wherein the wirings include first wirings and second wirings formed on a different layer with an insulating layer interposed therebetween, wherein the pads are electrically connected to the first wiring and the first wirings a connection part comprising first pads formed on the same layer as , and second pads formed on the same layer as the first pad, wherein the second wiring and the second pad are electrically connected to each other; Disclosed is an organic light emitting display device further comprising a.

A plurality of the first wirings and a plurality of the second wirings are alternately disposed.

A plurality of the first pads and a plurality of the second pads are alternately disposed.

The first wiring and the first pad are integrally formed.

The first pad is formed on the same layer as the first gate line, and the first and second insulating layers include a first opening exposing a portion of the first pad, and the first opening exposed through the first opening. a first protective layer covering the first pad; further includes

The second pad is formed on the same layer as the first gate line, and the first and second insulating layers include a second opening exposing a portion of the second pad, and the second opening is exposed through the second opening. a second protective layer covering the second pad; further includes

The second wiring is formed on the same layer as the second gate line, and the second insulating layer covers the second wiring and includes a contact hole for connecting the second wiring and the connection part, and the connection part is the It is formed integrally with the second protective layer.

The first pad is formed on the same layer as the second gate line, the second insulating layer includes a first opening exposing a portion of the first pad, and the first pad exposed through the first opening a first protective layer covering; further includes

The second pad is formed on the same layer as the second gate line, the second insulating layer includes a second opening exposing a portion of the second pad, and the second pad exposed through the second opening a second protective layer covering; further includes

The second wiring is formed on the same layer as the first gate line, the first and second insulating layers include a contact hole for connecting the second wiring and the connection part, and the connection part is the second protective layer formed integrally with

According to an embodiment of the present invention, even the pads connected to the wires formed on different layers are formed on the same layer through the connection part, thereby improving the bonding defect between the pads and the driver IC.

Meanwhile, according to an embodiment of the present invention, wirings disposed in the non-display area are alternately disposed on different layers, thereby reducing a gap between the wires to minimize a dead space and facilitate fan-out in a small panel or high-resolution display device. Sub-design is possible.

1 is a diagram schematically illustrating a display substrate 100 of an organic light emitting diode display according to an exemplary embodiment.
FIG. 2 is a cross-sectional view of FIG. 1 taken along the line II-II.
FIG. 3 is an enlarged view of a pixel portion of FIG. 1 .
FIG. 4 is an enlarged view of A of FIG. 1 .
FIG. 5 is a plane cut along the line V-V of FIG. 4 .
FIG. 6 is a plane cut along the line VI-VI of FIG. 4 .
FIG. 7 is a plane cut along line VII-VII of FIG. 4 .
8 is a view showing A of FIG. 1 according to another embodiment of the present invention.
FIG. 9 is a plane cut along the line IX-IX of FIG. 8 .
FIG. 10 is a plane cut along the line X-X of FIG. 8 .

Hereinafter, with reference to the accompanying drawings, various embodiments of the present invention will be described in detail so that those of ordinary skill in the art can easily carry out the present invention. The present invention may be embodied in many different forms and is not limited to the embodiments described herein.

In order to clearly describe the present invention, parts irrelevant to the description are omitted, and the same reference numerals are assigned to the same or similar elements throughout the specification.

Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, the first pad, the second pad, the first wiring, and the second wiring prepared according to claims 8 to 10 are the pad 2a, the pad 1a, and the second fan-out wiring of FIGS. 8 to 10, respectively. , may refer to a first fan-out wiring.

In the present specification, when a part such as a layer, film, region, plate, etc. is on or on another part, it includes not only a case directly on the other part but also a case where another part is in the middle.

In order to clearly express various layers and regions in the drawings, the thicknesses are enlarged. And in the drawings, the thickness of some layers and regions are exaggerated for convenience of description.

Hereinafter, a display device according to an embodiment of the present invention will be described in detail with reference to the drawings. In the present embodiment, the display device is an organic light emitting display device as an example, but this is only exemplary and an embodiment of the present invention is a display device including pads in a non-display area, such as a liquid crystal display device or a plasma display device. can be applied to all

1 is a diagram schematically illustrating a display substrate 100 of an organic light emitting diode display according to an exemplary embodiment. FIG. 2 is a cross-sectional view of FIG. 1 taken along line II-II. FIG. 3 is an enlarged view of a pixel portion of FIG. 1 . FIG. 4 is an enlarged view of A of FIG. 1 . FIG. 5 is a plane cut along the line V-V of FIG. 4 . FIG. 6 is a plane cut along the line VI-VI of FIG. 4 . FIG. 7 is a plane cut along line VII-VII of FIG. 4 .

Referring to FIG. 1 , an organic light emitting diode display according to an exemplary embodiment includes a display substrate 100 and a sealing substrate (not shown). The display substrate 100 is divided into a display area DA in which an image is displayed and a non-display area NDA around the display area DA. Although not shown, a sealing member is disposed in the non-display area NDA to surround the display area DA in order to bond a sealing substrate that seals the display area DA from outside air. However, when the sealing substrate is in the form of a thin film encapsulation, the sealing member may be omitted. The sealing substrate is disposed to face the display substrate 100 with the sealing member interposed therebetween, but the sealing substrate is not shown in FIG. 1 . Hereinafter, the display substrate 100 including the features of the present invention will be described in detail.

First, the display area DA of the display substrate 100 will be described in detail with reference to FIGS. 1 to 3 . 1 to 3 , one first gate line GL1 , a second gate line GL2 , a data line DL and one pixel P are illustrated, but these are exemplary and the entire display area DA is shown. A plurality of wires and pixels may be disposed.

1 to 3 , the display area DA is an area in which an image is displayed, and is an area in which various signal lines and pixels P connected to various signal lines are disposed. The signal lines include first gate lines GL1 and second gate lines GL2 extending in a first direction, and data lines DL extending in a second direction, and first gate lines GL1 ) and the pixel P is disposed in a region where the second gate lines GL2 and the data lines DL intersect.

The first gate lines GL1 are provided on the first gate insulating layer 113 and extend in the first direction (X). The first gate lines GL1 may include a previous scan line and an emission control line, but are not limited thereto. The first gate lines GL1 may be connected to a gate driver (not shown) or an emission control driver (not shown) to receive a scan signal or an emission control signal, but are not limited thereto.

The second gate lines GL2 are insulated from the first gate lines GL1 with the second gate insulating layer 123 interposed therebetween, and extend in the first direction (X). The second gate lines GL2 may include, but are not limited to, a scan line and an initialization power line. The second gate lines GL2 may be connected to a gate driver (not shown) or an initialization power driver (not shown) to receive a scan signal or initialization power, but is not limited thereto.

The first gate lines GL1 and the second gate lines GL2 do not overlap each other. That is, the first gate lines GL1 and the second gate lines GL2 do not overlap each other. As described above, in the display substrate 100 according to the exemplary embodiment of the present invention, each of the first gate lines GL1 and the second gate lines GL2, which are gate lines, has the second gate insulating layer 123 interposed therebetween. Since the distance W1 between adjacent gate wirings positioned on different layers can be narrowed by being positioned on different layers, more pixels P can be formed in the same area. That is, a high-resolution display device can be formed.

The types of signal wirings configured by the first and second gate wirings GL1 and GL2 described above, the types of signals transmitted by the signal wirings, and the type, number, and location of drivers to which the signal wirings are connected are determined. It is not limited to the described content and the illustrated content, and may be variously applied and changed according to the design content.

The data lines DL are insulated from the gate lines GL1 and GL2 with the interlayer insulating layer 105 interposed therebetween, and extend in a second direction Y crossing the first direction X. The data lines DL are connected to a driver IC (not shown) mounted in the non-display area NDA through pads and fan-out lines. The data line DL receives a data signal from a driver IC (not shown) through fan-out lines.

A plurality of pixels P is disposed in a cross region of the first gate lines GL1 , the second gate lines GL2 , and the data lines DL. The pixel may emit red, green, or blue light, but is not limited thereto, and may emit white light.

The pixel P includes an organic light emitting diode (OLED) emitting light with a luminance corresponding to a driving current corresponding to a data signal, and a pixel circuit (or a driving circuit) for controlling a driving current flowing through the organic light emitting diode (OLED). do. The pixel circuit is connected to each of the first gate lines GL1 , the second gate lines GL2 , and the data lines DL, and the organic light emitting diode OLED is connected to the pixel circuit. The pixel circuit may include a plurality of thin film transistors Ta and Tb and at least one capacitor (not shown).

The structure of the pixel P including the pixel circuit and the organic light emitting device will be described in detail with reference to FIG. 3 .

Meanwhile, although FIG. 3 illustrates two thin film transistors and an organic light emitting device included in the pixel P, the pixel P may further include an additional thin film transistor and a capacitor in addition to the illustrated device.

The pixel P is formed on the substrate 10 . The substrate 10 may be formed of a glass material, a plastic material, or a metal material. In order to realize a flexible display device that can be freely folded or bent, the substrate 10 may be formed of a flexible material, for example, a polyimide film.

A buffer layer 101 containing an insulating material is formed on the substrate 10 to provide a flat surface on the substrate 10 and prevent moisture and foreign substances from penetrating in the direction of the substrate 10 .

On the buffer layer 101, a pixel circuit including thin film transistors (Ta and Tb (thin film transistor)) and a capacitor (not shown) and an organic light emitting device (OLED) connected to the pixel circuit are disposed on the buffer layer 101 . is formed The thin film transistors Ta and Tb largely include active layers 102a,b, gate electrodes 104a,b, and source/drain electrodes 106sa,da,sb,db. The two thin film transistors Ta and Tb are characterized in that gate electrodes 104a and b are formed on different layers.

Specifically, in the case of the first thin film transistor Ta, the active layer 102a formed in a predetermined pattern is disposed on the upper surface of the buffer layer 101 . The active layer 102a is formed of an inorganic semiconductor material such as silicon, an organic semiconductor material, or an oxide semiconductor material including an oxide such as indium (In), gallium (Ga), tin (Sn), hafnium (Hf), or zinc (Zn). may contain. In addition, a p-type or n-type dopant may be implanted as needed. A first gate insulating layer 113 is formed on the active layer 102a. A first gate electrode 104a is formed on the first gate insulating layer 113 to correspond to the active layer 102a. The second gate insulating film 123 and the interlayer insulating film 105 are formed to cover the first gate electrode 104a, and the source/drain electrodes 106sa and da are formed on the interlayer insulating film 105, the active layer ( 102a) is formed to be in contact with a predetermined area.

Next, in the case of the second thin film transistor Tb, an active layer 102b formed in a predetermined pattern is disposed on the upper surface of the buffer layer 101, and a first gate insulating film 113 and a second gate insulating film are disposed on the active layer 102b. (123) is formed. A second gate electrode 104b is formed on the second gate insulating layer 123 to correspond to the active layer 102b. An interlayer insulating film 105 is formed to cover the second gate electrode 104b, and source/drain electrodes 106sb and db are formed on the interlayer insulating film 105 to contact the active layer 102b.

Here, the first gate insulating layer 113 and the second gate insulating layer 123 may be formed of a single layer or multiple layers of inorganic materials such as silicon oxide or silicon nitride. Also, the interlayer insulating film 105 may be formed of a single layer or multiple layers of inorganic materials such as silicon oxide or silicon nitride. The thickness d3 of the interlayer insulating layer 105 is thicker than the thickness d1 of the first gate insulating layer 113 or the thickness d2 of the second gate insulating layer 123 to planarize the surface, and source/drain electrodes Prevents the generation of parasitic capacitance between (106sa,sb,da,db) and the lower conductive layer.

Meanwhile, as described above, by varying the thickness (d1, d1+d2) of the gate insulating film between the gate electrodes 104a and b and the active layer 102a,b for each of the thin film transistors Ta and Tb, the following effects are obtained. can First, when the thin film transistor used as the driving thin film transistor is formed to have a thick gate insulating layer, the driving range of the gate voltage Vgs is widened, so that the gate voltage Vgs applied to the gate electrode of the driving thin film transistor is increased. It is possible to control so that light emitted from the organic light emitting diode has a richer grayscale by changing the . On the other hand, a thin film transistor used as a switching thin film transistor can be formed to have a thin gate insulating film, so that it can perform turn-on and turn-off at a high speed, and it can reduce parasitic capacitance between the gate electrode and the active layer. . Accordingly, there is a feature of realizing an optimal pixel circuit structure for an organic light emitting diode display.

A passivation layer 107 is formed to cover the source/drain electrodes 106sa, sb, da, and db of the thin film transistors Ta and Tb. A separate insulating layer may be further formed on the passivation layer 107 for planarization.

An organic light emitting diode (OLED) is formed on the passivation layer 107 . The organic light emitting diode OLED includes a first electrode 111 , a second electrode 112 , and an intermediate layer 114 .

A first electrode 111 is formed on the passivation layer 107 . The first electrode 111 is formed to be electrically connected to any one of the source/drain electrodes 106sa, sb, da, and db. Then, a pixel defining layer 109 is formed to cover the first electrode 111 . After a predetermined opening is formed in the pixel defining film 109, an intermediate layer 114 having an organic light emitting layer is formed in a region defined by the opening. A second electrode 112 is formed on the intermediate layer 114 .

On the other hand, when the organic light emitting device (OLED) is a full color organic light emitting device (OLED), the organic light emitting layer may be patterned into a red light emitting layer, a green light emitting layer and a blue light emitting layer according to the red sub-pixel, the green sub-pixel, and the blue sub-pixel, respectively have.

Meanwhile, the organic light emitting layer may have a multilayer structure in which a red light emitting layer, a green light emitting layer, and a blue light emitting layer are stacked to emit white light, or may have a single layer structure including a red light emitting material, a green light emitting material, and a blue light emitting material. The organic light emitting diode (OLED) having such an organic light emitting layer may emit full color by additionally including a red color filter, a green color filter, and a blue color filter. In the case of a bottom emission type that emits light as a light, the first electrode 111 becomes a transparent electrode, and the second electrode 112 becomes a reflective electrode. On the other hand, in the case of a top emission type that emits light in the opposite direction of the substrate 10 , the first electrode 111 becomes a reflective electrode and the second electrode 112 becomes a transflective electrode. In the case of the dual emission type, the first electrode 111 becomes a transparent electrode and the second electrode 112 becomes a transflective electrode.

Meanwhile, although not shown, each pixel has a transparent window structure that can transmit external light, thereby realizing a transparent display device.

Next, the non-display area NDA of the display substrate 100 will be described in detail with reference to FIGS. 1 and 4 to 7 .

1 and 4 to 7 , the non-display area NDA is an area in which an image is not displayed and various members for driving the display area DA and other modules are mounted. In the non-display area NDA, a driver IC (not shown), pads 300 connecting the driver IC (not shown) and the display area DA, and a fan-out part 200 are formed.

The driver IC (not shown) may include a data driving unit for supplying a data signal, and in addition, various functional units necessary for driving the display area DA may be included. A driver IC (not shown) is mounted on the display substrate 100 in a chip on glass (COG) type. One side of the driver IC (not shown) includes a connection terminal (not shown) electrically connected to the pads 300 formed on the display substrate 100 . The pads 300 and the connection terminal (not shown) may be bonded between the pads 300 and the connection terminal (not shown) by interposing an electrically conductive adhesive material including a conductive ball. As such an adhesive material, for example, an anisotropic conductive film, a self-aligning conductive film, or the like may be used.

The pads 300 are formed on the display substrate 100 and are electrically connected to the connection terminals of the driver IC (not shown). The pads 200 extend from the fan-out wirings 210 and 220, respectively.

The pads 300 include first pads 311 and second pads 312 . The first pad 311 and the second pad 312 are distinguished according to the layers of the connected fan-out wirings 210 and 220 . That is, the first pad 311 is a pad extended by a first fan-out wiring 210 to be described later, and the second pad 312 is a pad extended by a second fan-out wiring 220 to be described later. The first pads 311 and the second pads 312 are alternately disposed.

The first pad 311 is formed at a first position in the non-display area NDA. The second pad 312 is formed at a second position of the non-display area NDA, and the second position is not on the same line as the first position in the X direction. Accordingly, the first pad 311 and the second pad 312 are not arranged in a line on the same line, but are alternately arranged. As such, when the first pads 311 and the second pads 312 are alternately disposed, the two pads overlap by the regions V1, V2, and V3 shown in FIG. 4 . Accordingly, according to an embodiment of the present invention, many pads 300 may be disposed even in a space having a narrow width in the X direction, and consequently, a dead space of the non-display area NDA may be reduced. .

Fan-out wires 210 and 220 connecting the pads 300 and the display area DA are disposed. The fan-out wires 210 and 220 include first fan-out wires 210 and second fan-out wires 220 according to a formed layer. The plurality of first fan-out wires 210 and the plurality of second fan-out wires 220 are alternately disposed.

The first fan-out wiring 210 is formed on the first gate insulating layer 113 , and is formed on the same layer as the first gate wiring GL1 and made of the same material. One side of the first fan-out wiring 210 is connected to the first pad 311 , and the other side is connected to the display area DA, for example, the data line DL of the display area. The first fan-out line 210 may transmit a data signal from a driver IC (not shown) to the data line DL.

The second fan-out wiring 220 is formed on the second gate insulating layer 123 , and is formed on the same layer as the second gate wiring GL2 and made of the same material. One side of the second fan-out wiring 220 is connected to the second pad 312 , and the other side is connected to the display area DA, for example, the data line DL of the display area. The second fan-out line 220 may transmit a data signal from a driver IC (not shown) to the data line DL.

The first fan-out wiring 210 and the second fan-out wiring 220 are insulated with the second gate insulating layer 123 interposed therebetween, and are formed in different layers. The first fan-out wiring 210 and the second fan-out wiring 220 do not overlap each other. Because the thickness d2 of the second gate insulating layer 123 formed between the first fan-out wiring 210 and the second fan-out wiring 220 is relatively thin, the first fan-out wiring 210 This is because, when the second fan-out wiring 220 overlaps, the parasitic capacitance of the wiring region increases.

6 is a cross-sectional view illustrating the first fan-out wiring 210 and the first pad 311 electrically connected to the first fan-out wiring 210 .

The first pad 311 is formed on the first gate insulating layer 113 . Since the first fan-out wiring 210 is also formed on the first gate insulating layer 113 , the first pad 311 and the first fan-out wiring 210 may be integrally formed. A second gate insulating layer 123 and an interlayer insulating layer 105 are formed on the first pad 311 and the first fan-out wiring 201 . Since the first pad 311 must be in contact with a driver IC (not shown), a first opening 321 is formed in the second gate insulating layer 123 and the interlayer insulating layer 105 formed on the first pad 311 . The first pad 311 is exposed. Accordingly, the second gate insulating layer 123 and the interlayer insulating layer 105 may cover the edge of the first pad 311 , and the first opening 321 may expose the center of the first pad 311 . However, since the first fan-out wiring 210 needs to be insulated from the outside, an opening is not formed in the insulating layers formed on the first fan-out wiring 210 .

The first fan-out wiring 210 and the first pad 311 may be formed of the same material. For example, the first fan-out wiring 210 and the first pad 311 may include at least one selected from molybdenum (Mo), aluminum (Al), copper (Cu), silver (Ag), and titanium (Ti). It may be formed as a single layer or multi-layer of a low-resistance metal material. However, the portion exposed to the outside such as the first pad 311 is formed of a metal material and is easily corroded or damaged. Accordingly, the first protective layer 331 is formed on the first pad 311 exposed by the first opening 321 .

The first protective layer 331 is formed to cover a portion of the first pad 311 exposed through the first opening 321 , the second gate insulating layer 123 , and the interlayer insulating layer 105 . The first passivation layer 331 serves to prevent corrosion of the first pad 311 and to prevent lifting between the first pad 311 and the insulating layers, thereby improving pad reliability. The first protective layer 331 may be formed of at least one material selected from a low-resistance metal material such as molybdenum (Mo), aluminum (Al), copper (Cu), silver (Ag), and titanium (Ti) and a transparent conductive oxide (TCO). It may be made of a single layer and a multilayer comprising a. Here, the transparent conductive oxide is indium tin oxide (ITO), indium zink oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), and indium gallium oxide (indium). It may include at least one selected from the group including galium oxide: IGO), and aluminum zinc oxide (AZO).

Next, FIG. 7 is a cross-sectional view illustrating the second fan-out wire 220 and the second pad 312 electrically connected to the second fan-out wire 220 .

The second pad 312 is formed on the first gate insulating layer 113 in the same manner as the first pad 311 . However, since the second fan-out wiring 220 is formed on the second gate insulating layer 123 , a structure for connecting to the second pad 312 formed in different layers is required. Accordingly, in the present invention, the second pad 312 and the second fan-out wiring 220 are connected by providing a connection part 333 .

A second gate insulating layer 123 and an interlayer insulating layer 105 are formed on the second pad 312 in the same manner as the first pad 311 . Since the second pad 312 must be in contact with a driver IC (not shown), a second opening 322 is formed in the second gate insulating layer 123 and the interlayer insulating layer 105 formed on the second pad 312 . The second pad 312 is exposed. Accordingly, the second gate insulating layer 123 and the interlayer insulating layer 105 may cover the edge of the second pad 312 , and the second opening 322 may expose the center of the second pad 312 . Meanwhile, an interlayer insulating layer 105 is formed on the second fan-out wiring 220 . Since the second fan-out wiring 220 needs to be protected from the outside, the second fan-out wiring 220 is covered with the interlayer insulating layer 105 . However, since the second fan-out wiring 220 must be electrically connected to the second pad 312 , the interlayer insulating film 105 has a contact hole ( 323) may be formed. Here, the number, arrangement, shape, etc. of the contact holes 323 are not limited to the illustrated bar and may be implemented in various ways.

The second fan-out wiring 220 and the second pad 312 may be formed of different materials. For example, the second fan-out wiring 220 and the second pad 312 may include at least one selected from molybdenum (Mo), aluminum (Al), copper (Cu), silver (Ag), and titanium (Ti). It may be formed as a single layer or multi-layer of a low-resistance metal material. However, the present invention is not limited thereto, and the second fan-out wiring 220 and the second pad 312 may be formed of the same material. However, the portion exposed to the outside such as the second pad 312 is formed of a metal material and is easily corroded or damaged. Accordingly, the second protective layer 332 is formed on the second pad 312 exposed by the second opening 322 .

The second protective layer 332 is formed to cover a portion of the second pad 312 exposed through the second opening 322 , the second gate insulating layer 123 , and the interlayer insulating layer 105 . The second passivation layer 332 serves to prevent corrosion of the second pad 312 and to prevent lifting between the second pad 312 and the insulating layers, thereby improving pad reliability. The second protective layer 332 may be formed of at least one selected from a low-resistance metal material such as molybdenum (Mo), aluminum (Al), copper (Cu), silver (Ag), and titanium (Ti) and a transparent conductive oxide (TCO). It may be made of a single layer and a multilayer comprising a. Here, the transparent conductive oxide includes indium tin oxide (ITO), indium zink oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), It may include at least one selected from the group consisting of indium gallium oxide (IGO), and aluminum zinc oxide (AZO).

Meanwhile, the above-described connection part 333 may be integrally formed with the second protective layer 332 . Accordingly, the connection part 333 is connected to the second fan-out wiring 220 and the second protective layer 332 through the contact hole 323 formed in the interlayer insulating film 105 disposed on the second fan-out wiring 220 . connect The second protective layer 332 is in direct contact with the second pad 312 . Since the second protective layer 332 is made of the aforementioned conductive material, as a result, the second pad 312 may be electrically connected to the second fan-out wiring 220 .

According to an embodiment of the present invention, by forming all the pads 300 on the same layer, a bonding defect between the driver IC (not shown) and the pads 300 is prevented due to the height difference of the pads 300 . Problems that occurred were resolved. In detail, the buffer layer 101 and the first gate insulating layer 113 are disposed under the first pads 311 , and the buffer layer 101 and the first gate insulating layer 113 are also disposed under the second pads 312 . . Accordingly, both the first pads 311 and the second pads 312 are positioned at a height corresponding to the thickness of the buffer layer 101 and the first gate insulating layer 113 from the substrate 10 . That is, the pads 300 are all disposed at a constant height from the substrate 10 . In this case, when bonding the driver IC (not shown) and the pads 300 with an adhesive material, a bonding defect does not occur.

However, as a comparative example, when the second pad is formed on the same layer as the second fan-out wiring, the buffer layer, the first gate insulating layer, and the second gate insulating layer are present under the second pad. Accordingly, there is a difference in height corresponding to the thickness of the second gate insulating film compared to the first pad. In this case, a floating part occurs between the driver IC terminal and the surface of the pad, which creates a space for air, moisture, and quilt to penetrate during bonding, making it difficult to adhere closely and to maintain reliability even after bonding. However, as in the embodiment of the present invention, by resolving the difference in height of the pads through the connection part, this problem can be solved and reliability can be improved.

Meanwhile, according to an embodiment of the present invention, the connection part 333 is formed together when the first and second protective layers 331 and 332 are formed, thereby simplifying the process and further improving contact reliability.

In addition, according to an embodiment of the present invention, the fan-out portion size can be reduced by distributing and forming the fan-out wirings, which were all conventionally formed on the same layer, into different layers. Thereby, the dead space can be reduced and a larger number of wirings can be arranged in the fan-out part. Accordingly, more wirings can be formed in the same area, and a high-resolution display device can be formed. In addition, there is an advantage of realizing high resolution even in a small panel.

8 is a view showing A of FIG. 1 according to another embodiment of the present invention. FIG. 9 is a plane cut along the line IX-IX of FIG. 8 . FIG. 10 is a plane cut along the line X-X of FIG. 8 .

According to another embodiment of the present invention shown in FIGS. 8 to 10 , the pad 300 is different from the previous embodiment in that the pads 300 are formed on the second gate insulating layer 123 . Among the reference numerals shown in FIGS. 8 to 10 , the same reference numerals as those of FIGS. 1 to 7 have the same function and the same operation, and thus a redundant description thereof will be omitted. Hereinafter, it will be described based on the characteristics specific to FIGS. 8 to 10 .

8 and 9 , the first pad 311a is formed on the second gate insulating layer 123 . However, since the first fan-out wiring 210 is formed on the first gate insulating layer 113 , a structure is required to connect the first fan-out wiring 210 and the 1a pad 311a formed in different layers. Accordingly, in the present invention, a connection portion 333a is provided to connect the first pad 311a and the first fan-out wiring 210 to each other.

An interlayer insulating layer 105 is formed on the first a pad 311a. Since the first a pad 311a must be in contact with a driver IC (not shown), a first a opening 321a is formed in the interlayer insulating film 105 formed on the first a pad 311a to expose the first a pad 311a. do. Meanwhile, since the first fan-out wiring 210 needs to be insulated from the outside, the first fan-out wiring 210 is covered with the second gate insulating layer 123 and the interlayer insulating layer 105 . However, since the first fan-out wiring 210 needs to be electrically connected to the first a pad 311a, the second gate insulating layer 123 and the interlayer insulating layer 105 have the first fan-out wiring 210 and the connection part 333a. ) may be formed with a contact hole 323a for connecting them.

The first a pad 311a may be made of the above-described metal material, and since it is exposed to the outside, the first a pad 311a is easily corroded or damaged. Accordingly, the 1a protective layer 331a is formed on the 1a pad 311a exposed by the 1a opening 321a.

The 1a protective layer 331a is formed to cover the 1a pad 311a exposed through the 1a opening 321a and a portion of the interlayer insulating layer 105 . The first a protective layer 331a serves to prevent corrosion of the first a pad 311a and to prevent the first a pad 311a from floating between the insulating layers to improve pad reliability.

Meanwhile, the above-described connection portion 333a may be integrally formed with the 1a protective layer 331a. Accordingly, the connection part 333a is connected to the first fan-out wiring 210 through the contact hole 323a formed in the second gate insulating layer 123 and the interlayer insulating layer 105 disposed on the first fan-out wiring 210 . and the 1a protective layer 331a are connected. The 1a protective layer 331a is in direct contact with the 1a pad 311a. Since the 1a protective layer 331a is made of the aforementioned conductive material, as a result, the 1a pad 311a may be electrically connected to the first fan-out wiring 210 .

Next, referring to FIGS. 8 and 10 , the second a pad 312a is formed on the second gate insulating layer 123 in the same manner as the first a pad 311a. Since the second fan-out wiring 220 is also formed on the second gate insulating layer 123 , the second a pad 312a and the second fan-out wiring 220 may be integrally formed. An interlayer insulating layer 105 is formed on the second a pad 312a and the second fan-out wiring 220 . Since the second a pad 312a must be in contact with a driver IC (not shown), a second a opening 322a is formed in the interlayer insulating film 105 formed on the second a pad 312a to expose the second a pad 312a. do.

The second a pad 312a may be formed of a metal material, and thus easily corroded or damaged when exposed. Accordingly, a 2a protective layer 332a is formed on the 2a pad 312a exposed by the 2a opening 322a.

The second a protective layer 332a is formed to cover a portion of the second a pad 312a exposed through the second a opening 322a and the interlayer insulating layer 105 . The second a protective layer 332a serves to prevent corrosion of the second a pad 312a, and to prevent lifting between the second a pad 312a and the insulating layers, thereby improving pad reliability.

In the case of another embodiment of the present invention, similarly to the previous embodiment, the bonding reliability between the pad and the driver IC is improved.

Meanwhile, the first passivation layer 331 , the 1a passivation layer 331a , the second passivation layer 332 , the second passivation layer 332a and the connection parts 333 and 333a are connected to the data line ( DL) may be formed at the same time, and accordingly, may be formed on the same layer as the data line DL and made of the same material.

On the other hand, an additional protective layer may be further formed on the first and second protective layers 331, 332, 331a, 332a shown in FIGS. 6, 7, 9, and 10 of the present invention. To prevent corrosion, indium tin oxide (ITO), indium zink oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (indium gallium) oxide: IGO), and may be formed of a transparent conductive oxide selected from the group including aluminum zinc oxide (AZO).

Meanwhile, although not shown in FIGS. 5 to 7 , 9 and 10 , a passivation layer ( 107 in FIG. 2 ) is further formed on the fan-out wirings 210 and 220 to planarize the surface and protect the wirings below. . Here, the passivation layer (107 in FIG. 2) may include an inorganic material such as silicon oxide or silicon nitride, or may include one or more organic materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene and phenol resin. .

Although the present invention has been described through preferred embodiments as described above, the present invention is not limited thereto, and various modifications and variations are possible without departing from the concept and scope of the following claims. Those in the technical field to which it belongs will readily understand.

210,220: fan out wiring
310,320: pad

Claims (13)

a substrate including a display area on which an image is displayed and a non-display area around the display area;
a buffer layer disposed on the substrate;
an active layer disposed on the buffer layer;
a first insulating layer disposed on the active layer;
a first metal layer disposed on the first insulating layer;
a second insulating layer disposed on the first metal layer;
a second metal layer disposed on the second insulating layer;
a third insulating layer disposed on the second metal layer;
a third metal layer disposed on the third insulating layer;
a display device disposed on the third metal layer and including a first electrode, an intermediate layer, and a second electrode;
a first wiring disposed in the non-display area and made of the same material as the first metal layer;
a second wiring disposed with the first wiring and the second insulating layer interposed therebetween;
a first pad connected to the first wire;
a second pad connected to the second wire;
the first wiring and the second wiring extend in a first direction, and the first wiring is disposed adjacent to the second wiring in a second direction intersecting the first direction;
and a center of the first pad and a center of the second pad are alternately disposed. According to claim 1,
a first protective layer disposed on the first pad and electrically connected to the first pad; and
and a second passivation layer disposed on the second pad and electrically connected to the second pad. 3. The method of claim 2,
The second wiring is connected to the second passivation layer through a first opening provided in the third insulating layer. 3. The method of claim 2,
The first passivation layer and the second passivation layer are formed of the same material as the third metal layer. 3. The method of claim 2,
The first passivation layer and the second passivation layer are formed of the same material as the first electrode. 3. The method of claim 2,
It is disposed on the third insulating layer, the connection portion connecting the second wire and the second pad; further comprising,
The third insulating layer includes a contact hole for connecting the second wire and the connection part, and the connection part is provided integrally with the second protective layer. According to claim 1,
and the first pad and the second pad are disposed to overlap in the second direction. According to claim 1,
and the first wiring and the first pad are integrally provided. According to claim 1,
and one end of the first wire and the second wire are connected to the display area. According to claim 1,
and the second wiring does not overlap the second pad in cross-section. According to claim 1,
The first wiring and the second wiring are provided in plurality,
The plurality of first wirings and the plurality of second wirings are alternately disposed along the second direction. According to claim 1,
The first pad and the second pad are provided in plurality,
The plurality of first pads and the plurality of second pads are alternately disposed along the second direction. According to claim 1,
and a center of the first pad and a center of the second pad are alternately disposed with respect to the first direction and the second direction.

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