KR102225438B1 - F-gas treatment system - Google Patents

Abstract

The present invention relates to an F-gas integrated treatment system which primarily removes HF, HCl and dust in an exhaust gas through a pretreatment means, generates an HF gas by reducing various F-gas gases such as CF4, C2F6, NF3, SF6, and the like discharged from a semiconductor process through a catalytic reaction means, can completely remove the F-gas in the exhaust gas by removing the HF gas through a post-treatment means, and can discharge the HF gas from a catalytic reactor at a high temperature by further having a heat exchanger, thereby suppressing generation of condensed water to prevent corrosion of the catalytic reactor.

Description

F-gas integrated treatment system {F-GAS TREATMENT SYSTEM}

The present invention relates to an integrated F-gas treatment system, wherein HF, HCl and dust in exhaust gas are firstly removed through a pretreatment means, and CF4, C2F6, NF3, SF6, etc. discharged from a semiconductor process through a catalytic reaction means. HF gas is generated by reducing the same various F-gas gases, and by removing the HF gas through post-treatment means, the F-gas in the exhaust gas can be completely removed, and a heat exchanger is further provided to bring the HF gas to a high temperature. It relates to an F-gas integrated treatment system that prevents corrosion of the catalytic reactor by suppressing the generation of condensate by allowing it to be discharged from the catalytic reactor.

With the recent rapid development of modern industry, environmental pollution problems have emerged seriously, and various harmful pollutants and greenhouse gas problems generated in industrial power generation facilities and factories are gradually accelerating. In addition, as various process technologies are developed along with the development of the electronics industry, various kinds of harmful gases used in the production of electronic products are generated. As a result, greenhouse gas emissions are also increasing year by year. Looking at the change in emissions by greenhouse gas, CO ₂ increased by 149.2% and N ₂ O by 66.7% compared to 1990, while fluorine-based greenhouse gas increased by 768.7% for HFCs and 5287.9% for SF6 compared to 1990. This is because the amount of _{PFCs, SF 6,} etc., which are mainly used in the etching process and removal of residues generated in the chamber after deposition during the semiconductor and liquid crystal display manufacturing process, has increased significantly.

Looking at the semiconductor industry environment, due to the increase in the number of process steps due to DPT (Double Patterning Thechnology) and QPT (Quadruple Patterning Technology) technologies in the process of miniaturization, and the increase in the expansion of 3D structures such as 3D NAND, etching, chemical vapor deposition, etc. (CVD, Chemical Vapor Deposition) and cleaning processes are also increasing. Demand for these process exhaust gases (PFCs, SF ₆ and NF ₃ ) is expected to increase further in the future.

_{PFCs, SF 6} and NF ₃ , which are greenhouse gases from domestic/overseas semiconductor process, have very stable chemical properties, strong toxicity, corrosiveness, and combustibility, so they have a long remaining life when released to the atmosphere and have a very high global warming index. Safety and environmental preservation measures are becoming very important. The international community's efforts to reduce GHG emissions are currently ratified by the United States, Europe, and China, including Korea, through the ratification of the UN Framework Convention on Climate Change (UNFCCC) in 1993, ratification of the Kyoto Protocol in 2002 and the Paris Agreement in 2016. Is joining in. Accordingly, the semiconductor industry set the PFCs reduction target at 10% in the PFCs reduction program through the World Semiconductor Council (WSC), and invested about 136 billion won for voluntary reduction at the WSC level, improving efficiency in the process and introducing process gas removal facilities. Efforts are being made on reduction measures through reduction of gas consumption per production volume and so on.

_{Greenhouse gases (PFCs, SF 6} , NF ₃ ) and secondary reactants HF generated in the actual semiconductor and LCD production process. To reduce NOx, SOx, etc. complexly, a cleaning and dust collector was installed at the final stage, but these facilities have many difficulties due to limitations in treatment efficiency and structural problems. Accordingly, research institutes, including industries, are working on R&D aiming at reducing various greenhouse gas emissions, but the technical field is still insufficient. In addition, companies are reinforcing their own pollution regulations due to the rapid response to the recently strengthened environmental regulations and the formation of residential areas around industries, but there is a lack of on-site equipment to meet them, and meets consumers in terms of specific conditions, capacity, and cost. It is not possible to do so.

First, as a related technology, a'direct or indirect thermal decomposition method' in which F-gas is decomposed by contacting oxygen using high-temperature heat, such as "Semiconductor Exhaust Gas Treatment Device", is used. .

This method has the disadvantage of generating secondary pollution due to the low efficiency and the occurrence of thermal Nox due to operation at high temperatures of 1400~1600℃ or higher. Since it has to be operated at a high temperature for a long time, the operation cost is high, and the durability and low efficiency of the system, It has a disadvantage in that there is a problem in stability, and it is difficult to use it in an existing FAB (Fabrication) without a fuel supply facility because it uses liquefied natural gas or hydrogen as fuel. However, since other ancillary technologies are not required, the products that were developed mainly by the existing semiconductor waste gas treatment companies belong to this. Indirect heating decomposition method is a method of removing by oxidation the F-gas, such as direct combustion by raising the indirectly reactor temperature using the heater, because generally to the operation in a temperature range of 1100 ~ 1200 ℃ I, such as CF ₄ Not only is it difficult to remove decomposable perfluorinated compounds, but also has a problem in that the life of the heater is shortened due to high-temperature heating, making continuous operation difficult.

Secondly, a'plasma decomposition method' such as Patent No. 10-0347746 "Freon gas decomposition apparatus using high temperature plasma" is used.

However, there is a technical limitation in that when gases are exposed to too high energy state of plasma, not only PFCs intended to be decomposed are decomposed, but also _{stable gases such as N 2} react with oxygen to produce an excessive amount of NOx. The plasma decomposition method is divided into a method that is directly coupled to a low-pressure semiconductor process, and a method that decomposes and processes F-gas at normal pressure after the process. In the case of the plasma decomposition method in a low pressure process, plasma generation is well performed in a He or Ar atmosphere, but it is difficult to generate plasma in an N2, particularly, O2 environment, so that the decomposition efficiency rapidly decreases. In addition, since the durability of the plasma generating device is not sufficiently secured for continuous use, commercially available products have not yet come out even in advanced semiconductor countries including the United States and Japan. Arc plasma is the most developed and commercialized for F-gas decomposition and treatment at normal pressure and is being used for some process gas treatment. However, in the case of the arc plasma treatment method, while the F-gas decomposition treatment rate is very high, it uses a lot of electric energy to have a limit in terms of thermal efficiency, and is not suitable for large-capacity F-gas treatment due to a small plasma volume at normal pressure.

In addition, a catalytic decomposition method is used. _{Among various F-gases such as CF 4} , C ₂ F ₆ , NF ₃ , and SF _{6 emitted from the semiconductor process, SF 6} or NF _{3, which} is most commonly used in the etching process, can be decomposed and removed. PFCs containing carbon, such as CF ₄ and C ₂ F ₆ are very stable and difficult to decompose and remove. In general, alumina-supported platinum catalyst with good decomposition activity for hydrocarbons exhibits very high decomposition activity against the decomposition reaction of PFCs. Even in the case of alumina used as a carrier, in _{the presence of F 2} or HF, it _{is converted to AlF 3} and there is a problem in that the surface area is rapidly reduced, that is, corrosion occurs and durability is deteriorated.

Therefore, the present invention is conceived to solve the above problem,

Through the pretreatment means, the catalytic reaction means, and the post-treatment means, the pretreatment means first removes HF, HCl and dust in the exhaust gas, and the catalytic reaction means reduces the F of F-gas to generate HF gas, and then It is an object of the present invention to provide an integrated F-gas treatment system designed to treat F-gas by removing HF gas generated by the treatment means.

In particular, in the treatment of F-gas in the catalytic reaction means, an integrated F-gas treatment system capable of suppressing the generation of condensate by minimizing the generation of _{NO x by using the MILD combustion method and discharging HF at a high temperature is provided.} The purpose.

Another object is to provide an integrated F-gas treatment system equipped with a heat exchanger to lower the temperature of the HF gas discharged at a high temperature and send it to the post-treatment means, and to increase the temperature of the gas flowing into the catalytic reactor through this heat. It is done.

In addition, it is an object of the present invention to provide an integrated F-gas treatment system in which the catalytic reactor is composed of three compartments, and blower gas is blown into an unused compartment to discharge the remaining harmful components together.

In order to achieve the above object, the F-gas integrated treatment system according to the present invention

A pretreatment means comprising a scrubber and an electric precipitator, which primarily purifies HF, HCl and dust in harmful gases;

A catalytic reactor for synthesizing the gas that has passed through the pretreatment means into HF gas by decomposing the F component in the gas through a catalytic reaction, and is provided between the catalytic reactor and the pretreatment means, passing through the pretreatment means and flowing into the catalytic reactor. Catalytic reaction means comprising a heat exchanger for increasing the temperature of the gas and lowering the temperature of the hot gas discharged from the catalytic reactor;

A post-treatment means comprising a mixing unit for mixing the gas discharged from the catalytic reaction means with water, and a purification unit for secondaryly removing residual harmful components and HF gas in the gas;

It characterized in that it comprises a.

As described above, the F-gas integrated treatment system according to the present invention has the effect of efficiently removing F-gas in the exhaust gas generated in the semiconductor process through the pretreatment means, the catalytic reaction means, and the post-treatment means.

_{Specifically, it is possible to highly efficiently remove complex pollutants (PFCs, SF 6} , NF ₃ and secondary by-products HF, NOx, SOx) in consideration of the characteristics of the exhaust gas generated in the semiconductor process and the aspect of energy saving,

It is a new structured facility that complements the problems and necessities of existing facilities, and through a combustion member adopting the MILD combustion method to the catalytic reactor that decomposes F-gas, it can supply the temperature used for the catalytic reaction and maintain a uniform temperature.

A heat exchanger may be further provided to recover thermal energy to increase thermal efficiency, and HF gas may be discharged from the catalytic reactor at a high temperature, thereby suppressing the generation of condensed water and preventing corrosion.

In addition, the present invention can be used in a production line that requires the treatment of _{exhaust gas PFCs, SF 6,} NF ₃ and secondary pollutants (HF, SOx, NOx) generated from various places in a semiconductor process/chemical power plant,

In the case of the semiconductor process, the efficiency limit of the existing aging primary gas treatment system is solved, and the second untreated material is reduced, thereby reducing the load of the final post treatment facility, and reducing the cost required in the existing maintenance process. .

1 is a block diagram of an integrated F-gas treatment system according to the present invention
Figure 2 is an enlarged view of the pretreatment means of the F-gas integrated treatment system according to the present invention
Figure 3 is an enlarged view of the catalytic reaction means of the integrated F-gas treatment system according to the present invention
Figure 4 is an operation diagram of the catalytic reaction means of the integrated F-gas treatment system according to the present invention
Figure 5 is a perspective view of the post-treatment means of the integrated F-gas treatment system according to the present invention
Figure 6 is a side view of the post-treatment means of the F-gas integrated treatment system according to the present invention
7 is a perspective view of a guide vane of the F-gas integrated treatment system according to the present invention
8 is a schematic diagram of a reduction filter of the F-gas integrated treatment system according to the present invention
9 is a photographic view of the mesh filter of the F-gas integrated treatment system according to the present invention
10 to 12 are detailed views of the 3D-grid of the F-gas integrated treatment system according to the present invention.
13 is a graph of the reaction efficiency of the catalytic reactor of the F-gas integrated treatment system according to the present invention
14 is a block diagram showing a change in gas temperature of the F-gas integrated treatment system according to the present invention
15 to 19 are experimental data of the post-treatment means of the F-gas integrated treatment system according to the present invention

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The present invention will be described in detail in the text of the bar, implementation (態樣, aspect) (or embodiment) that can apply various changes and have various forms. However, this is not intended to limit the present invention to a specific form of disclosure, and it should be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the present invention.

In each drawing, the same reference numerals, in particular the number of tens and ones, or the same reference numerals with the same tens, ones, and alphabet indicate members having the same or similar functions, and unless otherwise specified, each of the drawings The member indicated by the reference numeral can be identified as a member conforming to these criteria.

In addition, components in each drawing are expressed by exaggeratingly large (or thick) or small (or thin) or simplified their size or thickness in consideration of the convenience of understanding, but the scope of protection of the present invention is limited by this. It shouldn't be.

The terms used in this specification are only used to describe specific embodiments (sun, 態樣, aspect) (or embodiments), and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, terms such as ~comprise~ or ~consist~ are intended to designate the existence of features, numbers, steps, actions, components, parts, or a combination thereof described in the specification, but one or more other features It is to be understood that the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof, does not preclude in advance the possibility of the presence or addition.

Unless otherwise defined, all terms used herein including technical or scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms as defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and should not be interpreted as an ideal or excessive formal meaning unless explicitly defined in this application. Does not.

In the integrated F-gas treatment system (S) according to the present invention, as shown in Fig. 1, a pretreatment means (A), a catalytic reaction means (B), and a post-treatment means (C) are configured as one system.

Prior to the description of the present invention, the present invention comprises a scrubber (A1), an electric precipitator (A2), a catalytic reactor (B2), a heat exchanger (B1), a mixing unit (C20), and a purification unit (C30). In each device, the inlet and the outlet for gas inlet and outlet refer to the inlet and outlet of different devices by the description and reference numerals in the specification, even if the same name is used. Other components of the same name, except for the inlet and outlet, are also specified with reference numerals to indicate that they are components of different devices.

Fig. 2 shows a pretreatment means (A) according to the present invention, wherein the pretreatment means (A) includes a scrubber (A1) and an electric precipitator (A2).

The pretreatment means A1 is provided to remove HF, HCl and dust in the exhaust gas, and after the exhaust gas of the duct D in the semiconductor process facility passes through the scrubber A1, the electric dust collector ( It consists of a structure that passes through A2).

The scrubber (A1) is a scrubber body (SC), a nozzle (SCN) provided in the scrubber body (SC) to spray water or a cleaning liquid, and a liquid film formed by the sprayed water or cleaning liquid provided in the scrubber body (SC). It consists of a filter (SF) made of a mesh network (SCM) forming a.

The scrubber body SC includes an inlet SC1 through which exhaust gas is introduced, a moving path through which the gas moves, and an exhaust unit SC2 for discharging the gas purified by the filter.

The scrubber (A1) in the present invention is made of a two-pass type, and is composed of a first scrubber body and a second scrubber body in communication with each other, and filters (SF) on the upper or lower portion of each or any one of the main bodies or both. A nozzle (SCN) is provided on each of the main bodies to spray water or a cleaning solution.

In particular, in the case of two-stage filters in the upper and lower portions, it is effective to remove acid gases (HF, HCl) in the gas as the washing liquid or water that has passed through the upper filter falls and is transferred to the lower filter. In the case of using, it is preferable to increase the removal efficiency by using a NaOH reducing agent in combination, and the removal efficiency can be confirmed as shown in [Table 1] by the reaction of the following <Reaction Formula 1>.

<Scheme 1>

HF+NaOH -> NaF+H ₂ O

HCl+NaOH -> NaCl+H ₂ O

[Table 1]

As described above, the exhaust gas passing through the scrubber A1 moves to the electric precipitator A2 to remove residual droplets and dust in the exhaust gas.

The electric precipitator (A2) includes a dust collecting body having an inlet (EP1) through which exhaust gas is introduced, and an exhaust part (EP2) through which the purified gas is discharged, and is provided in the dust collecting body to generate static electricity by receiving electricity. It includes a dust collecting electrode and a discharge electrode, and it is preferable that a nozzle is further provided above the dust collecting electrode and the discharge electrode.

In addition, a cleaning nozzle may be further provided on the side of the dust collecting electrode and the discharge electrode. This is because it is possible to minimize the dead space generated during cleaning by cleaning the dust collecting electrode and the discharge electrode at the same time, and to minimize the amount of water used.

Such an electric precipitator is a type of dust collecting device using an electrostatic coagulation action, and is generally called an electrostatic precipitator. As a two-stage electric charge type, charging and dust collection of dust particles are divided into two electric fields. Dust first takes on positive electricity through a strong corona discharge of 12,000 to 15,000 V, and then is adsorbed on a negative electrode plate with a DC voltage of 3,000 to 8,000 V to purify the gas.

In addition, in the present invention, the electric precipitator (A2) is composed of two devices capable of independent operation, so that it can be cleaned independently so that the gas can be continuously purified, and both devices are used depending on the processing capacity. It may be possible, and it should not be construed as limiting the position of rights.

The gas that has passed through the electrostatic precipitator (A2) is introduced into the catalytic reaction means (B), more precisely, it is characterized in that it first flows into the heat exchanger (B1).

More specifically, referring to Figure 3, the heat exchanger (B1) is provided in the heat exchange base body (B11) and the body (B1') so that the gas passing through the pretreatment means (A) is introduced and discharged, The first furnace in which the first inlet portion (a) and the first outlet portion (b) are formed, and the second inlet portion (c) and the second outlet portion (d) so that the gas that has passed through the catalytic reactor (B2) is introduced and discharged. ) Is formed of a second furnace, and heats the gas passing through the first furnace by using the heat of the gas passing through the second furnace, which will be described in more detail below.

First, the catalytic reactor (B2) includes a housing 10 comprising a compartment 11 for catalytic reaction of gas, a heat storage material layer 13 and a catalyst layer 15 provided in multiple stages in the compartment 11, and It comprises a catalytic reaction unit 17, which is a space in which the gas passing through the heat storage material layer 13 and the catalyst layer 15 reacts, and a combustion member 19 that heats the catalytic reaction unit 17 to increase the temperature to the heat of reaction. .

More specifically, the housing 10 is composed of a total of three compartments, each compartment has an inlet and an outlet for gas inflow and discharge, respectively, and a barrier wall is provided between each compartment. In addition, the catalytic reaction unit 17 communicating with each other forms a space above the compartments, and a combustion member 19 is provided on the upper portion of the housing to heat the catalytic reaction unit 17.

First, the housing in such a way that a heat insulating coating excellent Al ₂ O ₃ castable, Al ₂ O ₃ ceramic bulk, Al ₂ O ₃ pre-cast the mixture to be used, the Al ₂ O unit inlet and outlet _three spraying It is configured to increase insulation.

Each compartment has a heat storage material layer and a catalyst layer formed in multiple stages, and the heat storage material layer is made to apply heat to or take away heat from the gas passing through, and is made of a member containing _{Al 2} O _3,

The catalyst layer is made of M-Al ₂ O ₃ and pellets so that the gas passing through it can perform a catalytic reaction.

The reaction of this catalyst is shown in Table 2 below.

[Table 2]

As described above, when the gas passes through the catalytic reactor, F in the F-gas is decomposed to generate HF gas and decomposes the F-gas, and the HF gas is removed by a post-treatment means described below to purify the exhaust gas. Characterized by, and as shown in Figure 13, it can be seen that the decomposition efficiency of the F-gas is high.

In addition, in the present invention, the combustion member 19 provided in the catalytic reactor B2 to heat the catalytic reaction unit 17 is composed of a MILD type combustion member, _{thereby minimizing the generation of NO X} , high combustion stability and wide operation. It is characterized by enabling range.

MILD combustion (Moderate and Intense Low Oxygen Dilution) is, in general, when air is injected to burn fuel, a high-temperature flame zone is formed on the contact surface with the fuel, and nitrogen oxides are intensively produced in the flame zone, but mild Combustion is that when air is mixed with high-temperature combustion gas to dilute the oxygen concentration in the air and react with fuel after preheating to high temperature, the flame is evenly distributed and the temperature is very uniform and a mild flame is formed when viewed with the naked eye. In this case, the generation of nitrogen oxides is greatly reduced.

In the present invention, when the exhaust gas is introduced into the catalytic reactor, it passes through the heat exchanger (B1), which is configured to maintain the reaction temperature and the discharged HF gas above 120 degrees, see FIGS. 4 and 14 Thus, the operation will be described in detail.

First, the catalytic reactor (B2) consists of three compartments (11), and the gas introduced into one of the compartments is discharged through the other compartment, and the blower gas is introduced through the inlet of the unused compartment. Thus, it is characterized in that the harmful components remaining in the heat storage material layer and the catalyst layer are discharged together.

For convenience of explanation, the first compartment 11a, the second compartment 11b, and the third compartment 11c will be referred to from the left.

The gas passing through the pretreatment means is generally 25°C, that is, as a gas at room temperature, passing through the heat exchanger B1 and rising to about 100°C,

Step1: Exhaust gas flowing through the inlet of the first compartment passes through the heat storage material layer and the catalyst layer, while receiving the remaining heat from the heat storage material layer and being preheated, it rises to 700-800°C by the combustion member in the catalytic reaction section. Thus, the catalytic reaction proceeds.

When the catalytic reaction is completed, while passing through the catalyst layer and the heat storage material layer of the second compartment in order, heat is taken away from the heat storage material layer and discharged at a temperature of about 150°C, and the discharged gas is introduced into the heat exchanger (B1). Heat is taken from the gas flowing through the first furnace so that it can be introduced into the post-treatment means at a temperature of about 60°C.

This is because when the HF gas is lowered to 120° C. or less, condensate is generated, and the condensate corrodes the interior of the catalytic reactor made of an insulating material to reduce durability, so the present invention is to suppress the generation of condensate,

As the heat exchanger (B1) is made of a polymer material, corrosion does not occur even if condensate occurs, and even if corrosion occurs, only the heat exchanger (B1) can be replaced separately, so that the convenience of maintenance can be improved. (B1) is preferably provided with a separate drain line for discharging the generated condensed water.

Step2: When gas is introduced into the first compartment for a specified time and discharged to the second compartment, it is adjusted so that the exhaust gas flows into the third compartment by the damper.

That is, the gas flowing into the third compartment is discharged to the second compartment, and at this time, a blower gas is introduced into the first compartment to discharge harmful components remaining in the heat storage material layer and the catalyst layer of the first compartment together with the HF gas. Let's make it.

Step3: Likewise, the gas flows through the 3rd compartment but is discharged to the 1st compartment. Blower gas is blown into the 2nd compartment so that harmful components can be discharged together.

Step4: Set the gas to flow into the 2nd compartment, discharge it into the 1st compartment, and blow the blower gas into the 3rd compartment.

Step5: Set the gas to flow into the 2nd compartment, discharge it into the 3rd compartment, and blow the blower gas into the 1st compartment.

Step6: Set the gas to flow into the first compartment, discharge it into the third compartment, and blow the blower gas into the second compartment.

This process from Step 1 to Step 6 is set as one cycle so that the heat storage material does not contain or take away excessive heat, so that the exhausted gas can be discharged at a certain temperature, that is, at a temperature of 120 degrees or higher. To improve durability.

5 to 12 show post-processing means (C),

The post-treatment means (C) includes a mixing unit (C20) for mixing the gas discharged from the catalytic reaction means (B) with water, and a purification unit (C30) for secondaryly removing residual harmful components and HF gas in the gas. Consists of including.

More specifically, it comprises a main body (C1), a mixing unit (C20) and a purification unit (C30) provided in the main body (C1),

The main body (C1) is provided with an inlet (C11) through which the gas discharged from the catalytic reaction means (B) is introduced, and a discharge unit (C20) for discharging the gas to the duct after purification is completed, and the mixing unit (C20) ) And the purification unit C30 is further provided with a moving path.

The mixing unit C20 includes a pass pipe C21 through which gas moves, and the pass pipe C21 comprises two identical pass pipes C21 as a set, and the purification unit C30 ) It is also made including a reaction tube (C31), the reaction tube (C31) is also preferably provided to form a set of two of the same reaction tube (C31).

In addition, the pass pipe (C21) may be divided into a counter flow pipe (C211) and a current flow pipe (C213), and a pair of counter flow pipes (C211) are formed in two sets, and a flow pipe (C213) between them. It is provided as a set, and consists of a total of four counter flow pipes (C211) and two flow pipes (C213), and the reaction pipe (C31) is also a first reaction tube (C31) and a second reaction tube (C31) It is divided into.

In addition, a separate pump and a power supply device may be further provided to move exhaust gas and drive various devices to be described later, and a detailed description thereof will be omitted as a conventionally known technology.

Referring to the drawings, the mixing unit C20 will be described, as shown in FIG. 6, a pass pipe C21 provided in the main body C1 and through which the introduced exhaust gas moves, and the pass pipe ( A nozzle C25 provided in C21 for spraying water, and a guide vane C23 for mixing the nozzle C25 and the introduced exhaust gas.

More specifically, the gas that has passed through the guide vane C23 in the pass pipe C21 is mixed with water by the nozzle C25 installed in the counterflow pipe C211, and in the flow pipe C213, the guide vane ( After passing through C23), water is secondarily sprayed from the nozzle C25 installed in the flow pipe C213 to be mixed.

At this time, the angle of the guide vane C23 is preferably a guide vane C23 having a strong swirling airflow and forming a 120°C angle with a small pressure drop.

First, a description of the structure of the guide vane (C23), as shown in Figure 7, the guide vane (C23) is provided in plurality on the central axis (C231) and the outer surface of the central axis (C231), It consists of a wing member (C233) of a similar screw shape bent in one direction.

At this time, it is preferable to configure the forming angle of the wing member (C233) to 120 degrees.

Through this structure, it is possible to remove polluted gas by increasing the gas-liquid contact and mixing effect with the sprayed water by increasing the velocity and rotational force (formation of turbulence) of the incoming gas.

Again, the pass pipe (C21) is composed of a counter flow pipe (C211) and a flow pipe (C213), and the counter flow pipe (C211) is a direction in which water is sprayed and a direction in which gas is moved by the nozzle C25. It refers to a pipe in the reverse direction, and the flow pipe C213 refers to a pipe in which the direction in which water is sprayed by the nozzle C25 and the direction in which the gas moves are the same,

In the present invention, after the gas passes through the counter flow pipe C211, it passes through the flow pipe C213, passes through the counter flow pipe C211 again, and then flows into the purification unit C30.

In addition, the applicant of the present invention compared the case of applying one guide vane (C23) and two guide vanes (C23) to each of the counter flow pipe (C211) and the flow pipe (C213) to test the effect.

Referring to FIG. 15, the flow velocity of the exhaust gas is fixed at 3 m/s, the angle of the nozzle C25 is 30 degrees, and the amount of water sprayed from the nozzle C25 is 9 LPM.

In addition, the non-slip condition was used for the wall surface of the pass pipe C21, and the pressure condition of normal pressure was used for the outlet from which the exhaust gas was discharged.

16A is a graph showing the flow velocity distribution of the gas in the central cross section of the pass pipe C21. In the counter flow pipe C211, the gas flow direction and the water injection direction are opposite directions, so that the gas is pushed outward by the water injection. You can see the shape appear.

In the flow pipe C213, since the water injection and the gas flow direction are the same direction, the gas flow is accelerated by the water injection, and the high flow rate region is elongated downward. When 2 sets of guide vanes (C23) are applied (2 pieces each), a swirling air flow is formed once more, and it is considered that a periodic high flow area in the form of a wave can be seen near the wall of the pass pipe (C21). It is expected that the blending will be more favorable than that.

FIG. 16B is a diagram showing the pressure distribution in the central cross section of the pass pipe C21. In the counter flow pipe C211, the gas flow direction and the water injection direction are in opposite directions, so the resistance increases due to water injection, resulting in a slightly higher pressure drop. Can be seen. The pressure drop at the entrance and exit of the pass pipe (C21) was 115 Pa in 1 Set and about 120 Pa in 2 Set. In the flow pipe C213, the flow of gas is accelerated by the water injection because water is sprayed into the flow flow, and the effect of sucking the gas appears. The pressure drop at 2PASS appears as a negative value. In 1 set, the suction effect occurs with a pressure drop of about ??56 Pa, and when the 2 set guide vane (C23) is applied, the pressure drop slightly increases, which is predicted as a pressure drop of ??32 Pa.

17A is a diagram showing the distribution concentration of water particles in the central cross section of the pass pipe C21. Since the counter flow pipe C211 is injected opposite to the gas flow, the swirling air flow passed through the guide vane C23 immediately after the water injection It can be seen that water particles are distributed mainly in the upper part of the path pipe (C21) due to diffusion while meeting with. In the case of the flowing flow pipe (C213), it seems that the distribution of water particles is elongated downward because it is arranged as a flow flow and the direction of gravity also coincides with the water spray direction.

When 2 sets of guide vanes (C23) are applied, it seems that the degree of diffusion is stronger than that of 1 set in the counter flow pipe (C211). It seems that the amount of distribution in the center of the tube (C21) has decreased.

In Fig. 17A, which shows the gas flow velocity in the cross section of the pass pipe C21 by height, in the case of the counter flow pipe (C211), the swirling air flow is strongly formed near the water spray nozzle (C25), so the flow velocity at the outer portion is high and the center is low. A low flow velocity distribution appears in the form of an annular band at an intermediate position in the outer direction from the center of the path pipe (C21), which means that the water particles injected from the nozzle (C25) spread in a conical shape in the opposite direction to the gas flow. It seems that the flow rate was lowered due to collision with. In the flow pipe (C213), the gas flow and the water particle injection direction are the flow flow, so the gas flow velocity is accelerated by the water particles in the center of the path pipe (C21) and appears high. In the case of applying 2 sets, at the outlet of the path pipe (C21). It can be seen that the flow velocity of the outer periphery is increased by the secondary swirling airflow generated again by the guide vane (C23).

In Fig. 18A, which shows the distribution concentration of water particles by the height of the pass pipe (C21), the counter flow pipe (C211) is injected opposite to the gas flow, so it diffuses from the top of the pass pipe (C21) and is distributed relatively evenly over the entire cross section. You can see that there is. In the case of the flow pipe (C213), since it is a flow flow, water particles are distributed only in the center of the upper portion, and gradually spread as it descends. When 2 sets of guide vanes (C23) are applied, it seems that the degree of diffusion is stronger than that of 1 set in the counter flow pipe (C211). The distribution at the center of the tube (C21) seems to have decreased.

18B, which shows the flow form of the gas introduced from the inlet of the pass pipe C21, in the counter flow pipe C211, the swirling air flow formed after passing through the guide vane C23 is caused by water particles sprayed from the water spray nozzle C25. As it is pushed outward, the flow velocity is high on the wall near the nozzle (C25).

When a 2 set guide vane (C23) is installed in the counter flow pipe (C211), it seems that the swirling air flow is formed stronger in the upper part of the pass pipe (C21). The trend flow pipe (C213) tends to straighten the swirling air flow by water particles, and when a 2 set guide vane (C23) is installed in the flow flow pipe (C213), a secondary swirling air flow is formed at the lower end of the pass pipe (C21), resulting in mixing. It seems to be smooth.

19 is a diagram showing the trajectory of water particles sprayed from the water spray nozzle C25, FIG. 19A illustrates the water particle trajectory, and FIG. 19B is an enlarged view. In the counter flow pipe C211, the water sprayed from the nozzle C25 descends downward from the center of the pass pipe C21, and rotates and rises at the outer portion of the pass pipe C21 by a swirling air current. Since the water particles in the center of the nozzle (C25) are located in the center of the swirling air flow, the effect of inertia and gravity is strong, so that the water particles sprayed in the outer direction of the nozzle (C25) (30 degrees) are the outer part. It rotates along the strong slewing air current of and descends, and as the descending speed decreases, it rotates while being caught in the gas flow and rises. When the second guide vane (C23) is installed in the counter flow pipe (C211), the water particles flowing down are rotated once more, and it turns in 2 sets compared to the 1 set showing a straight trajectory in the lower pass pipe (C21). You can see it falling. In the flow pipe (C213), since it is a flow type, the water particles stretch downward and appear to rotate slowly. In particular, near the exit of the lower end of the path pipe (C21), a trajectory in an almost straight line is shown. In the case of 2 sets in which the secondary guide vane (C23) is installed in the flow pipe (C213), it can be seen that the trajectory of the water particles rotates and falls while rotating by the secondary swirling air flow at the lower end of the path pipe (C21).

The following [Table 3] is a table showing the amount of water particles for each height cross section, and a high number means that a large number of water particles are contained in the cross section.

[Table 3]

[Table 3] shows that a large number of water particles are distributed in the upper part of the counterflow pipe (C211) by the countercurrent swirling air flow, and when 2 sets of guide vanes (C23) are applied in the counterflow pipe (C211), it is 1350mm. It was found that the amount of water particles increased in the cross section. The flow pipe (C213) has a high distribution of water particles at the lower end of the pass pipe (C21) because it is a flow flow pipe (C213), and when 2 sets of guide vanes (C23) are applied from the flow pipe (C213), it is attached to the pass pipe (C21) by the swirling air flow at the lower end. It was found that the amount of water particles on the outlet side decreased due to the increase in water particles, but the water particles distributed in the pass pipe (C21) increased as a whole.

That is, by comparing the flow characteristics of the present invention by the above configuration, a swirling air flow is generated after passing through the guide vane C23, and a strong swirling air flow having a high flow velocity is formed as the angle of the guide vane C23 increases. However, as the angle of the guide vane C23 increases, the resistance increases and the pressure drop increases. The larger the angle of the guide vane (C23), the smoother the mixing becomes. When the pressure drop and mixing are combined, the 120 degree guide vane (C23) is the most preferable.

When water is sprayed in a counter flow, the water particles in the center of the nozzle (C25) are located in the center of the swirling air flow, so the effect of inertia and gravity is strong, so that the water particles descend as they are, and the water particles sprayed in the outer direction of the nozzle (C25) (30 degree direction) rotates along the strong swirling air current in the outer part and descends, and the descending speed decreases, resulting in a form that rotates while being caught in the gas stream and rises. In the case of installing a 2 set guide vane (C23) in counterflow, it was found that the swirling air flow became stronger and the mixing was smooth.

When water is sprayed with a flowing flow, the water particles stretch downward and the swirling airflow tends to be straightened by the water particles, and a nearly straight trajectory appears near the exit at the lower end of the pass pipe (C21). If additional guide vanes (C23) (2 sets) are installed in the current flow, secondary swirling air flow is formed at the lower end of the path pipe (C21), and mixing becomes smooth.

In counter flow spraying, the resistance increases due to water spraying and the pressure drop appears somewhat high, 115Pa in 1 set and about 120Pa in 2 sets. In the current flow, the gas flow is accelerated by water injection, and the pressure drop appears as a negative value. In 1 set, the suction effect is created with a pressure drop of about ??56 Pa, and when the 2 set guide vane (C23) is applied, the pressure drop is slightly increased. Thus, the effect of inhaling at a pressure of ??32Pa was revealed.

The gas-liquid mixing effect was maximized by further reinforcing the generation of swirling flow by applying guide vanes (C23) in two stages. When gas flows into the pass pipe (C21), the guide vane (C23) is branched into each of the pass pipes (C21) installed in two stages, so that the flow rate is divided by half, (the present invention has the same pass pipe (C21). This is because the dog is configured as a set.) The reaction speed is mixed with water sprayed at a high flow rate of 4m/sec or more. The guide vane (C23) is divided into two stages so that the blade rotation angle is 120 degrees and the four blades are mounted on the cross section of the path pipe (C21) around the central axis (C231) in consideration of the flow analysis result, pressure loss, and manufacturing possibility. It was applied to further enhance the formation of swirling flow, allowing it to be mixed with the sprayed water.

With reference to Figs. 8 to 12, the purification unit C30 will be described.

The purification unit C30 is provided to remove harmful components and HF gas in the gas that has passed through the mixing unit C20, and includes a reaction tube C31 and a purification filter C33 provided in the reaction tube C31. ) And a spray nozzle (C35).

The reaction tube (C31) is composed of a first reaction tube (C31) and a second reaction tube (C31), the reaction tube (C31) is composed of two, characterized in that it consists of a total of four reaction tubes (C31). do.

The purification filter (C33) is composed of a case (C331), a mesh filter (C333) and a 3D-grid (C335) provided in the case (C331), and is installed in a two-stage structure per one reaction tube (C31) So that harmful components can be removed through 4 stages of the purification filter (C33).

In this case, the purification filter C33 refers to a filter in which a mesh filter C333 and a 3D-grid C335 are arranged in two stages in series in the case C331.

That is, as shown in FIG. 8, a mesh filter (C333) and a 3D-grid (C335) are sequentially arranged at the front end, and a 3D-grid (C335) and a mesh filter (C333) are sequentially arranged at the rear end. Have.

The mesh filter (C333) has a 3D mesh structure manufactured by intersecting the front and rear by a knitting method by forming a 300-denier PE mono-single yarn and 96 PP yarns. Water dispersion is easy and wide by giving a sense of volume between the intersections. It relates to a technology that removes gas by maximizing the generation of a liquid film on the surface area and increasing the contact force between gas and liquid.The reaction section is short, so the pressure loss is small, and in the 3D-grid (C335) installed at the rear end of the mesh filter (C333). It is manufactured in a structure that can expect gas reduction effect once more.

Similar to the mesh filter (C333), the 3D-grid (C335) is designed in a structure that can maximize the mixing effect of gas and liquid, and the structure is assembled by overlapping and arranging flat and curved types to form one module. It is a structure to do. The contact area is excellent, the pressure loss is small, and the dispersion ratio of the sprayed cleaning solution is increased, so that a water film can be formed on the entire surface. The area ratio per volume of the 3D-grid (C335) is 1/20 of that of the existing packing (tri-pack 2.5 inches), reducing the reaction area and at the same time the surface area is 147㎡/㎥ for the existing packing, while the 3D-Grid is 1,700㎡. It is 12 times higher than /㎥ level This means that pollutant gases can be sufficiently removed even with a small area and volume.

When describing each configuration in more detail with reference to the drawings,

First, as shown in FIG. 9, the mesh filter C333 may be formed of any one of a rigid mesh C3331 and a soft mesh C3333, or may be provided in close contact with each other.

First, the rigid mesh (C3331) is made of a rigid first mesh member (C3331a) and a rigid second mesh member (C3331b) woven in a mesh shape, and the rigid first mesh member (C3331a) and the rigid second mesh member ( It connects C3331b), but consists of a plurality of first connecting members C3331c provided to be parallel to each other.

This rigid mesh (C3331) is constructed by weaving a mesh in a mesh shape and then heat-coating to improve its strength, and has a high porosity, low pressure loss, and has a mesh 3D structure that is advantageous for liquid film formation.

That is, when viewed from the cross section, the rigid first mesh member (C3331a) and the rigid second mesh member (C3331b) spaced apart from each other become a point forming a liquid film, and a first connection member (C3331c) between them is provided. The portion consists of a point for mixing a gas and a liquid together with the formation of a liquid film, so that the liquid film formation can be carried out more effectively.

In addition, the soft mesh (C3333) is made of a first soft mesh member (C3333a) and a second soft mesh member (C3333b) woven in a mesh shape, the first soft mesh member (C3333a) and the second soft mesh member (C3333b) ) To connect, but consists of a plurality of second connection members (C3333c) provided to cross each other.

This ductile mesh (C3333) is constructed by weaving a mesh in a mesh shape and then heat-coating to improve its strength, but it is made of a ductile material by heat treatment less than that of the stiff mesh (C3331). Like ), it has a high porosity, low pressure loss, and has a 3D mesh structure that is advantageous for liquid film formation.

That is, when viewed from the cross section, the first flexible mesh member (C3333a) and the second flexible mesh member (C3333b) spaced apart from each other become a point for forming a liquid film, and a liquid film is provided in the portion provided with the second connecting member between them. It consists of a point for mixing gas and liquid together with formation, so that the liquid film formation can be more effectively performed.This effect is the same as the rigid mesh (C3331), but the second connecting member (C3333c) is the soft first mesh on both sides. The member C3333a and the second flexible mesh member C3333b are provided to cross each other to form a liquid film more densely than the rigid mesh C3331.

10 to 12 are shown for the 3D-grid (C335) of the present invention,

The 3D-grid (C335) is inserted into the case (C331) and consists of a plurality of first meshes (C3351) and a second mesh (C3353) provided between the first meshes (C3351),

The first mesh (C3351) is formed in a plurality of the first outer frame (C3351A) and the first outer frame (C3351A) to form a plurality of first through holes (C3351B) a first horizontal frame (C3351C) ) And the first vertical frame (C3351D) and the first through hole (C3351B) protruding toward the center of each corner of the first through hole (C3351B), and consisting of a diagonal frame (C3351E) configured to be spaced apart from each other. , The second mesh (C3353) is formed in a plurality of the second outer frame (C3353A) and the second outer frame (C3353A) to form a plurality of second through holes (C3353B) a second horizontal frame ( C3353C) and a second vertical frame (C3353D).

More specifically, the 3D-grid C335 is formed by repeatedly overlapping and arranging the first mesh C3351 and the second mesh C3353, and as shown in the drawing, the front end and the rear end are Five are arranged so that each of the first meshes C3351 is located, and a second mesh C3353 is provided between each of the first meshes C3351, so that it is preferable to consist of a total of four second meshes C3353. As one embodiment is shown, the number may be selected and arranged in various ways, and thus the scope of the rights should not be limited and interpreted.

First, the first mesh (C3351) will be described, the first mesh (C3351) is composed of a first outer frame (C3351A) formed in a rectangular shape, and a plurality of first outer frames (C3351A) inside the first outer frame (C3351A). The first horizontal frame C3351C and the first vertical frame C3351D are provided in a flat plate shape to form the through hole C3351B in a lattice shape.

In addition, the first through hole (C3351B) is to pass through the contaminated gas that is introduced, it is preferable that the diagonal frame (C3351E) is provided so that a liquid film is formed by the cleaning liquid sprayed more effectively.

Specifically, the diagonal frame (C3351E) is provided at each corner of the first through hole (C3351B), is provided to face the center of the first through hole (C3351B), and the ends of the diagonal frames (C3351E) are It will be provided so that it can be spaced apart.

Therefore, when the gas penetrates, it is split by the diagonal frame C3351E to improve the contact area with the cleaning liquid, and at the same time, the sprayed cleaning liquid is configured to form a liquid film.

In addition, at the rear end of the first mesh C3351, the second mesh C3353 is overlapped and arranged,

The second mesh (C3353) is a second outer frame (C3353A), a second horizontal frame (C3353C) which is formed in a plurality in the second outer frame (C3353A) to form a plurality of second through holes (C3353B), and It is composed of a second vertical frame (C3353D).

More specifically, the second mesh C3353 has a quadrangular second outer frame formed in the same manner as the first mesh C3351, and a plurality of lattice-shaped second penetrations inside the second outer frame C3353A A second horizontal frame C3353C and a second vertical frame C3353D are provided to form a hole C3353B.

In this case, the second mesh C3353 has a non-flat, bent shape, unlike the first mesh C3351, and will be described in more detail with reference to the drawings. The vertical frame C3353D is provided so that the shape of one side thereof crosses and protrudes at the front end and the rear end to form a zigzag shape.

That is, the second horizontal frame C3353C connecting the second vertical frame C3353D is bent based on the second vertical frame C3353D to form a zigzag shape.

In this way, the first mesh (C3351) and the second mesh (C3353) are provided so as to be alternately arranged to overlap each other, and at this time, the second mesh (C3353) located at the front end of the second mesh (C3353) (2-1 It is preferable that the mesh (C3353A) and the second mesh (C3353) (2-2 mesh (C3353B)) positioned at the rear end are arranged differently from each other.

More specifically, the 2-1 mesh (C3353A) and the 2-2 mesh (C3353B) are formed in the same shape, but the direction in which they are arranged is rotated by 90 degrees to be arranged,

Specifically, as the 2-1 mesh (C3353A) is configured to form a zigzag shape in the plane shape, and the 2-2 mesh (C3353B) is arranged to form a zigzag shape in the side shape, a liquid film is formed and collided when the gas passes. It is done to maximize the effect.

In this case, the first through hole (C3351B) and the second through hole (C3353B) are provided at positions opposite to each other, and the two first through holes (C3351B) are provided with one second through hole (C3353B) and It is preferable to be provided oppositely (the horizontal length of the second through hole C3353B is more than twice the horizontal length of the first through hole C3351B, and the vertical length is the same).

That is, the present invention is provided with the 3D-grid (C335) as described above, but the flat-type first mesh (C3351) and the bent-type second mesh (C3353) are assembled in an overlapping arrangement to reproduce a 3D volume feeling, and spray The contact area is improved through a 3D structure shape that increases the dispersion ratio of the cleaned cleaning solution and the contaminated gas, and gas-liquid mixing is performed by repeatedly passing the first through hole (C3351B) and the second through hole (C3353B). It has the characteristic of maximizing the effect and improving the reduction performance by using the principle of absorbing and removing contaminated gas caused by diffusion through the formation of a partial liquid film. In addition, the 3D-grid (C335) has excellent durability and strength compared to conventional filters by injecting MP540 PP having excellent chemical resistance and excellent strength from the mold plate.

As described above, the purification filter (C33) of the present invention is manufactured in the shape of a case (C331) and has a structure that is convenient for replacement and maintenance, has excellent water permeability, less clogging, and less pressure loss. In addition, a space part is formed in the center of the case (C331), that is, in the center part, and this space part allows the 3D-grid (C335) to be additionally applied according to the gas concentration, and the surface of the 3D-grid (C335) forms a water film. It is a structure in which the contact surface between pollutants increases due to the occurrence of more than 90% of the ratio. In the case of the 3D-grid (C335), high-density polyethylene (HDPE), which is used as a chemical container, especially hydrochloric acid container, was used because of its excellent chemical resistance, and the salt component generated after HCl reacts with NaOH due to its excellent salt resistance. It was able to solve the corrosion problem for. In addition, it has a high wear resistance and high resistance to tearing, so it has a high service life (PVC: 20-30 years, HDPE: 50 years or more). The case (C331) is made of impact polymer (PP Block Copolmer), which is a material that has high durability and strong resistance to impact.

In addition, in describing the present invention above, the F-gas integrated processing system having a specific shape, structure, and configuration has been mainly described with reference to the accompanying drawings, but the present invention is capable of various modifications, changes, and substitutions by those skilled in the art. Modifications, changes and substitutions should be construed as falling within the scope of the present invention.

S: F-gas integrated treatment system D: Duct
A: pretreatment means A1: scrubber
SC: scrubber body SC1: inlet
SC2: Discharge part SCM: Mesh net
SCN: Nozzle
A2: Electric dust collector EP1: Inlet
EP2: Discharge part
B: catalytic reaction means B1: heat exchanger
B11: heat exchange base body
a: inlet to the first reactor b: discharge to the first reactor
c: inlet to the second reactor d: discharge to the second reactor
B2: catalytic reactor 10: housing
11: compartment 11a: first compartment
11b: second compartment 11c: third compartment
13: heat storage material layer 15: catalyst layer
17: catalytic reaction unit 19: combustion member
C: post-treatment means
C1: main body C11: inlet
C20: mixing unit C21: pass pipe
C211: Counter flow pipe C213: Current flow pipe
C23: guide vane C25: nozzle
C30: purification unit C31: reaction tube
C33: purification filter C35: spray nozzle

Claims (4)

A pretreatment means comprising a scrubber and an electric precipitator, which primarily purifies HF, HCl and dust in harmful gases;
A catalytic reactor for synthesizing the gas that has passed through the pretreatment means into HF gas by decomposing the F component in the gas through a catalytic reaction, and is provided between the catalytic reactor and the pretreatment means, passing through the pretreatment means and flowing into the catalytic reactor. Catalytic reaction means comprising a heat exchanger for increasing the temperature of the gas and lowering the temperature of the hot gas discharged from the catalytic reactor;
A post-treatment means comprising a mixing unit for mixing the gas discharged from the catalytic reaction means with water, and a purification unit for secondaryly removing residual harmful components and HF gas in the gas;
F-gas integrated treatment system, characterized in that comprising a. The method of claim 1,
The catalytic reactor is
A housing consisting of a compartment in which a gas inlet and a gas discharge part are formed, a heat storage material layer and a catalyst layer provided in multiple stages in the compartment, a catalytic reaction part in which gas passing through the heat storage material layer and the catalyst layer reacts with a catalyst, and the catalytic reaction part are heated. It is made including a combustion member,
The combustion member F-gas integrated treatment system, characterized in that driven by a MILD (Moderate and Intense Low Oxygen Dilution) combustion method. The method of claim 2,
The catalytic reactor is
It consists of three compartments each provided with an inlet and an outlet,
Gas flows into one of the three compartments, and the gas that has completed the catalytic reaction is discharged into the other compartment, and the blower gas is introduced through the inlet of the other compartment to remain in the heat storage material layer and the catalyst layer in the compartment. F-gas integrated treatment system, characterized in that made to be able to discharge harmful components together with the gas. The method according to claim 2 or 3,
The catalytic reactor is
Condensed water is prevented from being generated from HF gas by maintaining the discharged HF gas at more than 120 degrees and being discharged.
F-gas integrated treatment system, characterized in that made to improve the durability of the catalytic reactor.

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