KR102222459B1 - Apparatus and method for verifying rf unit of substrate treatment apparatus - Google Patents

Abstract

A high-frequency unit verification apparatus of a substrate processing apparatus is disclosed. The apparatus for verifying a high frequency unit of a substrate processing apparatus according to the present invention includes: a virtual chamber including a variable load matching unit configured to be capable of impedance modulation so as to implement an impedance of a process chamber in which a substrate is processed; A high-frequency unit provided to apply a high-frequency power to the virtual chamber, wherein the high-frequency unit includes: a high-frequency generator for generating a high-frequency power signal; An impedance matching unit that receives the high frequency power signal from the high frequency generator and matches an impedance such that the high frequency power signal is converted into the high frequency power and applied to the virtual chamber; And a sensor connected to the impedance matching unit; including, outputting a control signal related to a process recipe to the high-frequency unit, and collecting process parameters according to the control signal from the high-frequency unit to verify the performance of the impedance matching unit. It may include a; verification unit. The sensor may be connected to the inside or outside of the impedance matching unit.

Description

A high-frequency unit verification device and verification method of a substrate processing device {APPARATUS AND METHOD FOR VERIFYING RF UNIT OF SUBSTRATE TREATMENT APPARATUS}

The present invention relates to a high-frequency unit verification apparatus and verification method of a substrate processing apparatus. More specifically, the present invention relates to an apparatus structure and method for measuring the efficiency of a high frequency unit of a substrate processing apparatus.

In order to manufacture a semiconductor device, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed on the substrate to form a desired pattern on the substrate. Among them, the etching process is a process of removing a selected heating region among the films formed on the substrate, and wet etching and dry etching are used. Among them, an etching apparatus using plasma is used for dry etching.

In general, to form a plasma, an electromagnetic field is formed in an inner space of a process chamber, and the electromagnetic field excites a process gas provided in the process chamber into a plasma state. Plasma refers to an ionized gaseous state composed of ions, electrons, and radicals. Plasma is produced by very high temperatures, strong electric fields, or RF electromagnetic fields.

In the semiconductor device manufacturing process, an etching process is performed using plasma. The etching process is performed when ionic particles contained in the plasma collide with the substrate. The high-frequency unit applies high-frequency power to form a plasma into the process chamber. In order to improve the processing quality of the substrate, it is necessary to form a uniform plasma in the process chamber by a high frequency unit.

Conventionally, in order to verify the high-frequency unit, it is difficult to verify the high-frequency unit because the high-frequency unit is connected to an actual process chamber, and then the high-frequency characteristics have to be examined and the quality of the high-frequency unit has to be evaluated. In addition, since the efficiency of the impedance matching unit or the connection cable included in the high-frequency unit cannot be known, it is also difficult to verify the performance of the components included in the high-frequency unit.

The present invention is to provide a high-frequency unit verification apparatus and verification method of a substrate processing apparatus capable of measuring the efficiency of an impedance matching unit or a cable.

The problem to be solved by the present invention is not limited to the problems mentioned above. Other technical problems not mentioned will be clearly understood by those of ordinary skill in the art from the following description.

A high-frequency unit verification apparatus of a substrate processing apparatus is disclosed.

The apparatus for verifying a high frequency unit according to the present invention includes: a virtual chamber including a variable load matching unit configured to enable impedance modulation to implement an impedance of a process chamber in which a substrate is processed; A high-frequency unit provided to apply a high-frequency power to the virtual chamber, wherein the high-frequency unit includes: a high-frequency generator for generating a high-frequency power signal; An impedance matching unit that receives the high frequency power signal from the high frequency generator and matches an impedance such that the high frequency power signal is converted into the high frequency power and applied to the virtual chamber; And a sensor connected to the impedance matching unit; including, outputting a control signal related to a process recipe to the high-frequency unit, and collecting process parameters according to the control signal from the high-frequency unit to verify the performance of the impedance matching unit. It may include a; verification unit.

The high frequency unit verification apparatus may further include a dummy load connected to the virtual chamber and having a 50Ω resistance.

The high frequency unit may further include a pulse controller connected to the high frequency generator and receiving a pulse input value from the verification unit to control a pulse of the high frequency power signal.

The sensor may be connected to the inside or outside of the impedance matching unit.

The sensor may include a first sensor connected to an input terminal of the impedance matching unit.

Alternatively, the sensor may further include a second sensor connected to an output terminal of the impedance matching unit.

According to another embodiment of the present invention, the apparatus for verifying the high frequency unit may further include a third sensor connected to the output terminal of the virtual chamber.

When the sensor is connected to the inside of the impedance matching unit, voltage is measured, and when the sensor is connected to the outside of the impedance matching unit, power may be measured.

The verification unit may measure the efficiency of a cable connected to the high frequency generation unit and the impedance matching unit by using a sensor incorporated in the high frequency generation unit and the first sensor of the impedance matching unit.

The verification unit may measure the efficiency of the impedance matching unit through the first sensor connected to the input terminal of the impedance matching unit and the second sensor connected to the output terminal of the impedance matching unit.

The verification unit may measure the efficiency of the impedance matching unit and the virtual chamber through the first sensor connected to the input terminal of the impedance matching unit and the third sensor connected to the output terminal of the virtual chamber.

The verification unit may perform impedance analysis through data provided through the sensor.

According to another embodiment of the present invention, a method of verifying a high frequency unit of a substrate processing apparatus is disclosed.

The high-frequency unit verification method includes: setting an impedance of a process chamber in which a substrate is processed in a variable load matching unit of a virtual chamber capable of impedance modulation; Connecting a high frequency unit for applying high frequency power to the variable load matching unit; Outputting, by a verification unit, a control signal related to a process recipe to the high-frequency unit; And measuring, by the verification unit, the efficiency using a sensor of an impedance matching unit included in the high-frequency unit. It may include.

The substrate processing method may further include connecting a dummy load having a 50Ω resistance to the virtual chamber.

The high frequency unit includes a high frequency generator for generating a high frequency power signal, and an impedance matching impedance such that the high frequency power signal is input from the high frequency generator and the high frequency power signal is converted into the high frequency power and applied to the process chamber. A matching unit, a pulse controller connected to the high frequency generator and receiving a pulse input value from the verification unit to control a pulse of the high frequency power signal, and a power input from the high frequency generator to the impedance matching unit to measure the It may include a sensor that transmits to the verification unit.

The verification unit may measure the efficiency of a cable connecting the impedance matching unit or the high frequency generation unit to which the high frequency power is generated and the impedance matching unit.

According to an embodiment of the present invention, a high-frequency unit verification apparatus and verification method of a substrate processing apparatus capable of measuring the efficiency of an impedance matching unit or a cable are provided.

According to an embodiment of the present invention, there is an effect that a detailed analysis of a high-frequency unit is possible.

The effects of the present invention are not limited to the above-described effects. Effects not mentioned will be clearly understood by those of ordinary skill in the art from the present specification and the accompanying drawings.

1 is a block diagram showing an apparatus for verifying a high frequency unit of a substrate processing apparatus according to an exemplary embodiment of the present invention.
2 is a diagram illustrating signals transmitted between a verification unit and a virtual chamber and a high frequency unit constituting a high frequency unit verification apparatus according to an embodiment of the present invention.
3 is a configuration diagram of a verification unit constituting a high-frequency unit verification apparatus according to an embodiment of the present invention.
4 to 8 are diagrams illustrating an embodiment in which a sensor is connected to an impedance matching unit according to an embodiment of the present invention.
9 is a diagram showing a substrate processing apparatus.
10 is a flowchart of a method of verifying a high frequency unit of a substrate processing apparatus according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art may easily implement the present invention. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein. In addition, in describing a preferred embodiment of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and functions.

"Including" a certain component means that other components may be further included rather than excluding other components unless specifically stated to the contrary. Specifically, terms such as "comprises" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features or It is to be understood that the presence or addition of numbers, steps, actions, components, parts, or combinations thereof does not preclude the possibility of preliminary exclusion.

Terms such as first and second may be used to describe various constituent elements, but the constituent elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another component. For example, without departing from the scope of the present invention, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

Singular expressions include plural expressions unless the context clearly indicates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer explanation.

The'~ unit' used throughout this specification is a unit that processes at least one function or operation, and may mean, for example, a hardware component such as software, FPGA, or ASIC. However,'~ part' does not mean limited to software or hardware. The'~ unit' may be configured to be in an addressable storage medium, or may be configured to reproduce one or more processors.

As an example,'~ unit' refers to components such as software components, object-oriented software components, class components, and task components, processes, functions, properties, procedures, and subs. Routines, segments of program code, drivers, firmware, microcode, circuits, data, databases, data structures, tables, arrays, and variables. The components and functions provided by the'~ units' may be performed separately by a plurality of elements and the'~ units', or may be integrated with other additional elements.

In the high frequency unit verification apparatus of the substrate processing apparatus according to an embodiment of the present invention, a virtual chamber including a variable load matching unit configured to be capable of impedance modulation to implement an impedance of a process chamber in which a substrate is processed, and a high frequency power supply to the process chamber. A high-frequency unit provided for application, and a verification unit that outputs a control signal related to the process recipe to the high-frequency unit and collects process parameters according to the control signal from the high-frequency unit to verify the performance of the impedance matching unit 22. . According to an embodiment of the present invention, it is possible to verify the performance of the impedance matching unit 22 using a virtual chamber, and it is possible to verify the performance of a high-frequency cable or the like. More specifically, it is possible to verify the efficiency of the impedance matching unit 22 or the high-frequency cable using a sensor.

In an embodiment of the present invention, the impedance of the virtual chamber can be more accurately set by analyzing the impedance of the process chamber according to the process recipe and setting the impedance of the virtual chamber according to the process recipe. Accordingly, after processing such as replacing a new high frequency unit or maintaining an existing high frequency unit, it is possible to further increase the reliability of the pre-verification performed before connecting the high frequency unit to the process chamber.

In the conventional substrate processing apparatus, it is impossible to measure and analyze the efficiency of the impedance matching unit 22 or the high-frequency cable, and thus, it is difficult to verify the performance thereof. In addition, impedance analysis of the impedance matching unit 22 or the virtual chamber also has a problem that is impossible. In the present invention, the above problems can be solved by providing a high-frequency unit verification apparatus for a substrate processing apparatus. The detailed configuration of the high-frequency unit verification apparatus according to the present invention will be described in detail below.

1 is a block diagram of an apparatus for verifying a high frequency unit of a substrate processing apparatus according to an exemplary embodiment of the present invention. Referring to FIG. 1, the high frequency unit verification apparatus of the substrate processing apparatus according to the embodiment of the present invention can pre-verify the high frequency unit 20 before connecting the high frequency unit 20 to the process chamber, and also impedance matching. The efficiency of the unit 22 can be measured. The high frequency unit verification apparatus may include a virtual chamber 10, a high frequency unit 20, a verification unit 30, and a dummy load 40.

The virtual chamber 10 includes a variable load matcher configured to enable impedance modulation to implement an impedance of a process chamber in which a substrate is processed. The process chamber may be, for example, a chamber in which a process such as etching is performed on the substrate. The impedance of the process chamber may be calculated and set in advance according to the layout of the process chamber, or may be calculated by simulation or the like.

The variable load matching unit of the virtual chamber 10 may include a resistor, a variable capacitor, and an inductor. The variable load matching unit can be manufactured and used at a frequency suitable for the high frequency unit to be verified, and the frequency used may be, for example, a high frequency such as 100MHz, 60MHz, 27.12MHz, 13.56MHz, 9.8MHz, 2MHz, 400kHz.

The high frequency unit 20 is provided to apply high frequency power to the process chamber, and may be connected to the variable load matching unit of the virtual chamber 10 for pre-verification of the high frequency power. In one embodiment, the high-frequency unit 20 may be provided to apply high-frequency power to form a plasma in the process chamber.

The verification unit 30 may output a control signal related to a process recipe to the high-frequency unit 30 and collect process parameters according to the control signal from the high-frequency unit 30 to verify the high-frequency unit 20. In addition, the verification unit 30 may verify the efficiency of the impedance matching unit 22 and the cable.

The process recipe may include information about a process process for processing a substrate in a process chamber. The process recipe may include information such as, for example, a frequency of the high frequency unit 20, a pulse/continuous wave mode, a variable impedance input of the impedance matching unit 22, a process time, etc., and may include time series processes. .

The dummy load 40 is connected to the virtual chamber 10 and may be provided as a load having a 50Ω resistance. The virtual chamber 10 and the dummy load 40 replace the actual process chamber and serve to implement the impedance of the process chamber in a desired situation by user input or system setting.

FIG. 2 is a diagram illustrating signals transmitted between a verification unit, a virtual chamber, and a high-frequency unit constituting a high-frequency unit verification apparatus of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIGS. 1 and 2, the RF unit may include an impedance matching unit 22, a sensor 24, a high frequency generator 26, and a pulse controller 28.

The impedance matching unit 22 (RF matcher) matches the impedance so as to receive a high frequency power signal from the high frequency generator 26, convert the high frequency power signal into a high frequency power, and apply it to the process chamber. The impedance matching unit 22 may be manufactured so that high-frequency power is efficiently applied into the process chamber in order to form a uniform plasma or the like.

The sensor 24 measures the power input from the high frequency generator 26 to the impedance matching unit 22 and transmits it to the verification unit 30. The sensor 24 may read a power value from the high frequency generator 26. The sensor 24 may be used to perform power calibration of the high frequency generator 26 before starting the verification operation, or to check the RF power value entering the impedance matching unit 22 during the verification operation. Various embodiments of the sensor 24 will be described later.

The RF generator 26 generates a high frequency power signal. A pulse controller 28 is connected to the high frequency generator 26. The pulse controller 28 receives a control signal (setting signal) including a pulse input value from the verification unit 30 and controls the pulse of the high frequency power signal.

The verification unit 30 sequentially outputs control signals conforming to the process recipe to at least one of the high frequency generation unit 26 and the impedance matching unit 22 to be tested, and collects and displays the process parameters from the unit to be tested. Thus, the unit to be tested (the high frequency generation unit and/or the impedance matching unit 22) is verified.

The verification unit 30 includes a virtual chamber 10, an impedance matching unit 22, a power sensor 24, a high frequency generator 26, and a pulse controller 28 through the first to fifth cables 31 to 35. ) Can be connected.

The verification unit 30 transfers setting signals, such as a pulse/continuous wave (CW) mode switching control signal, a pulse frequency control signal, and a pulse duty ratio control signal, to the pulse controller 28, and sets the power to the high frequency generator 26. A setting signal including a value may be transmitted, and a setting signal including a variable capacitance position value may be transmitted to the virtual chamber 10.

The virtual chamber 10 may transmit a process parameter including an impedance value corresponding to the variable capacitance position value received from the verification unit 30 to the verification unit 30. That is, the variable load matching unit of the virtual chamber 10 receives the input of the variable capacitor position from the control PC of the verification unit 30, and checks the position value of the variable capacitor and the corresponding impedance value. ).

The pulse controller 28 may control the pulse output of the high frequency generator 26. The pulse controller 28 may receive a pulse input value desired by the user from the verification unit 30 and control a pulse or a continuous wave (CW) of the high frequency generator 26. The pulse controller 28 may control the pulse output of the high frequency generator 26 by using signals such as CW/pulse mode conversion, pulse frequency, and pulse duty ratio transmitted from the control PC of the verification unit 30. .

The high frequency generator 26 verifies the forward power, reflect power, and delivery power corresponding to the set power received from the control PC of the verification unit 30. It can be transmitted to the unit 30.

The impedance matching unit 22 may be used by connecting a variable load having the same frequency as the high frequency generator 26. The impedance matching unit 22 is a forward power, reflected power, a variable capacitance position value (Cap Position), a voltage value (Vrms) and a current value (Irms) received from the high frequency generator 26 And the like may be transmitted to the verification unit 30. At this time, the variable capacitance position value may be replaced with an input value in the control PC of the verification unit 30 as necessary.

3 is a configuration diagram of a verification unit constituting a high-frequency unit verification apparatus according to an embodiment of the present invention. 1 and 3, the verification unit 30 includes a control unit 30a, an impedance setting unit 30b, a control signal output unit 30c, a parameter collection unit 30d, a verification unit 30e, and a storage unit. (30f) may be included.

The control unit 30a includes at least one processor, and controls each component of the verification unit 30 to transmit a control signal to the virtual chamber 10 and the high frequency unit 20, and collect process parameters to obtain a high frequency unit. (20) Alternatively, a program for verifying the impedance matching unit 22 is executed.

The impedance setting unit 30b sets the impedance of the virtual chamber 10. The impedance setting unit 30b may set the impedance of the virtual chamber 10 according to a user input, a system setting, or an impedance simulation result of the process chamber. Alternatively, when the impedance analysis result of the process chamber is stored, the impedance setting unit 30b may set the impedance of the virtual chamber 10 according to the impedance analysis result of the process chamber.

The control signal output unit 30c outputs control signals to the virtual chamber 10 and the high frequency unit 20. The control signal output unit 30c can transmit the same control signals as the setting signals transmitted to the process chamber and the high frequency unit to the virtual chamber 10 and the high frequency unit 20 according to a process recipe for processing a substrate in the process chamber. have.

The parameter collection unit 30d collects process parameters from the virtual chamber 10 and the high frequency unit 20. Process parameters may include, for example, power, voltage, current, impedance measurement values, and the like.

The verification unit 30e verifies the high frequency unit 30 from the process parameters collected from the virtual chamber 10 and the high frequency unit 20. In an embodiment, the verification unit 30e may verify the high frequency unit 30 by comparing the collected process parameters with preset reference process parameters. The verification unit 30e verifies the impedance matching unit 22 from the process parameters collected from the virtual chamber 10 and the high frequency unit 20.

The verification unit 30e can verify the impedance matching unit 22 or the current impedance region of the virtual chamber by implementing a Smith chart on the software using the data measured by the impedance matching unit 22 or the sensor of the virtual chamber. Do. In addition, it may be possible to check the 50Ω matching path of the virtual chamber.

The verification unit 30e can check the stability through the evaluation of the maximum power of the high frequency generation unit and the self-limit evaluation. It is possible to designate a specific impedance of the impedance matching unit 22 and to evaluate other impedances in succession, so that reproducibility and stability can be checked through matching evaluation. In addition, it is possible to measure and analyze the power efficiency of the impedance matching unit 22 itself. The verification unit 30e enables precise analysis of the high-frequency unit by marking the impedance. In the case of the power sensor among the sensors, it may be possible to evaluate the application of the RF pulse by replacing the pulse sensor.

In the case of a unit in which a problem occurs through the verification unit according to the present invention, it is possible to check the problem, check and analyze the performance of the high-frequency unit through verification, and improve quality.

The storage unit 30f stores a program for verifying the high-frequency unit, and various information (impedance of the virtual chamber, control signals and process parameters, high-frequency unit verification results, etc.).

The state of each constituent part of the virtual chamber 10 and the high frequency unit 20 can be checked by a user through a display unit, an output unit, or the like of the verification unit 30. When the user operates the verification device, log data collected from each component is always stored, and these values can be expressed as numerical values for each component in the control PC of the verification unit 30 in real time. The desired process parameters can be monitored in real time in the form of graphs.

If there are several frequencies used in the high frequency unit, it is possible to configure several lines according to the corresponding frequency.

The operation of the verification device can be operated in both manual and automatic form. When operating in a manual format, the user can verify by changing the parameters of all units in real time. When verifying in an automatic form, the device is operated according to the operation sequence prepared in advance. If security is required in the evaluation process, it is possible to set the evaluation software so that only evaluation results can be displayed, and recipes and log data can be encrypted. Through this function, the actual process effect can be reproduced in the same way.

When verifying the high-frequency unit, it is possible to connect to the verification unit in all possible communication methods.

If necessary, the user can use the verification unit 30 to check the stability of the high frequency power source through the maximum power evaluation and self-limit evaluation of the high frequency generator 26, or designate a specific impedance to the impedance matching unit 22. Thus, the matching evaluation can be performed to check impedance matching performance and stability.

The sensor 24 may be included in the impedance matching unit 22 of the high frequency unit verification apparatus of the substrate processing apparatus according to the present invention. A sensor included in the impedance matching unit 22 may be connected to the inside or outside of the impedance matching unit 22. When connected to the inside of the impedance matching unit 22, the voltage inside the matching unit may be sensed. When connected to the outside of the impedance matching unit 22, the amount of power applied at the corresponding point may be sensed. The sensor may include a first sensor 24a connected to the input terminal of the impedance matching unit 22 and capable of measuring power applied to the impedance matching unit 22. The sensor may further include a second sensor 24b connected to the output terminal of the impedance matching unit 22 to measure power after passing through the impedance matching unit 22.

The sensor connected to the impedance matching unit 22 may include a first sensor 24a or a second sensor 24b. Alternatively, the sensor connected to the impedance matching unit 22 may include only the first sensor 24a. When the first sensor 24a is connected to the input terminal of the impedance matching unit 22, the voltage inside the impedance matching unit 22 may be sensed or the amount of power input to the impedance matching unit 22 may be sensed. The second sensor 24b connected to the output terminal of the impedance matching unit 22 may sense the voltage inside the impedance matching unit 22 or the amount of power at the output terminal after passing through the impedance matching unit 22. .

4 to 8 are diagrams illustrating various exemplary embodiments in which a sensor is connected to the impedance matching unit 22 according to an exemplary embodiment of the present invention.

In FIG. 4, an embodiment including a first sensor 24a connected to an input terminal of the impedance matching unit 22 and a second sensor 24b connected to an output terminal of the impedance matching unit 22 is disclosed.

The high frequency generator 26 may be equipped with its own internal sensor. The internal sensor may sense power, voltage, current, etc. output from the high frequency generator. The first sensor 24a connected to the input terminal of the impedance matching unit 22 may sense power efficiency at a sensing time.

As an example, it is assumed that the power sensed by a sensor included in the high frequency generator is 1000W. It is assumed that the power sensed by the sensor connected to the input terminal of the impedance matching unit 22 is 900W. In that case, it can be seen that the efficiency of the cable 36 connecting the high frequency generating unit and the impedance matching unit 22 is 90%.

In this way, the efficiency of the cable can be checked in the verification unit by using the sensor connected to the input terminal of the impedance matching unit 22 and the sensor inside the high frequency generating unit.

By applying the above measurement method, it is possible to evaluate the power transmission efficiency of a high-frequency cable. Through this evaluation, it is possible to analyze the power loss of the high frequency cable or the phase according to the length of the high frequency cable. The analysis may be performed by a user analyzing the sensor data or displaying a desired analysis result using a control software. This may be indicated through the verification device 30.

According to another embodiment of the present invention, it is also possible to obtain the efficiency of the impedance matching unit 22 by using sensors connected to the input and output terminals of the impedance matching unit 22. Efficiency can be verified using the first sensor 24a connected to the input terminal of the impedance matching unit 22 and the second sensor 24b connected to the output terminal of the impedance matching unit 22.

Assuming that the power sensed at the input end of the impedance matching unit 22 is 1000W, and assuming that the power sensed at the output end of the impedance matching unit 22 is 500W, the efficiency of the impedance matching unit 22 will be calculated as 50%. I can.

According to FIG. 4, a first sensor 24a is externally installed at the input terminal of the impedance matching unit 22, and a second sensor 24b is externally installed at the output terminal of the impedance matching unit 22. Is installed. Through this, it is possible to verify the efficiency of the cable 36 or to verify the efficiency of the impedance matching unit 22.

According to FIG. 5, a first sensor 24a is externally installed at the input end of the impedance matching unit 22, and a second sensor 24b is installed at the output end of the impedance matching unit 22. Is installed. Through this, it is possible to verify the efficiency of the cable 36 or sense an impedance or voltage value inside the impedance matching unit 22.

According to FIG. 6, a first sensor 24a is installed at the input end of the impedance matching unit 22, and a second sensor 24b is installed at the output end of the impedance matching unit 22. Is installed. According to FIG. 7, a first sensor 24a is installed at the input end of the impedance matching unit 22, and a second sensor 24b is installed at the output end of the impedance matching unit 22. Is installed. By installing the sensor in the desired position freely as described above, efficiency verification and impedance verification for desired components can be effectively performed.

According to another embodiment of the present invention, in addition to the sensor, it is possible to measure the efficiency of the impedance matching unit 22 through real-time measurement of the input or output of the impedance matching unit 22.

According to FIG. 8, a first sensor 24a is installed inside the input end of the impedance matching unit 22, and a third sensor 24c is installed inside the impedance matching unit 22 at the output end of the virtual chamber.

Depending on the state of the chamber or the impedance matching unit 22, there may be cases where the sensor cannot be installed inside. In this case, it is possible to measure the efficiency of the impedance matching unit 22 and the virtual chamber by installing the third sensor 24c at the output terminal of the virtual chamber. Or, it is possible to verify and check the efficiency by measuring the input and output of the virtual chamber.

In addition, it may be possible to verify the efficiency of the cable 37 connected to the dummy load by using the third sensor 24c connected to the output terminal of the virtual chamber.

The method according to the embodiment of the present invention can be written as a program that can be executed on a computer, and can be implemented in a general-purpose digital computer that operates the program using a computer-readable recording medium. Computer-readable recording media include volatile memories such as SRAM (Static RAM), DRAM (Dynamic RAM), SDRAM (Synchronous DRAM), Read Only Memory (ROM), Programmable ROM (PROM), Electrically Programmable ROM (EPROM), Nonvolatile memory such as Electrically Erasable and Programmable ROM (EEPROM), flash memory device, phase-change RAM (PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), ferroelectric RAM (FRAM), floppy disk, hard disk, or The optical reading medium may be, for example, a storage medium such as a CD-ROM or a DVD, but is not limited thereto.

9 is a diagram showing a substrate processing apparatus. The substrate processing apparatus may perform processing on a substrate using plasma. Hereinafter, a substrate processing apparatus for etching a substrate will be described, but the substrate processing apparatus and method according to an embodiment of the present invention may be utilized for efficiency verification in a substrate processing apparatus for processing such as plasma cleaning.

Referring to FIG. 9, the substrate processing apparatus includes a process chamber 100, a support unit 200, a gas supply unit 300, a plasma source 400, and an exhaust unit 500. The process chamber 100 has a processing space for processing a substrate therein. The process chamber 100 includes a housing 110, a cover 120, and a liner 130.

The housing 110 has a space in which the upper surface is open. The inner space of the housing 110 is provided as a processing space in which a substrate processing process is performed. The housing 110 is made of a metal material. The housing 110 may be made of aluminum. The housing 110 may be grounded.

An exhaust hole 102 is formed on the bottom surface of the housing 110. The exhaust hole 102 is connected to the exhaust line 151. The reaction by-products generated during the process and the gas remaining in the inner space of the housing 110 may be discharged to the outside through the exhaust line 151. The inside of the housing 110 is depressurized to a predetermined pressure by the exhaust process.

The cover 120 covers the open upper surface of the housing 110. The cover 120 is provided in a plate shape and seals the inner space of the housing 110. The cover 120 may include a dielectric substance window. The liner 130 is provided inside the housing 110. The liner 130 has an inner space in which upper and lower surfaces are open. The liner 130 may be provided in a cylindrical shape. The liner 130 may have a radius corresponding to the inner surface of the housing 110. The liner 130 is provided along the inner surface of the housing 110. The liner 130 may be made of the same material as the housing 110. The liner 130 may be made of an aluminum material.

The liner 130 protects the inner surface of the housing 110. For example, an arc discharge may be generated inside the process chamber 100 while the process gas is excited. Arc discharge damages peripheral devices. The liner 130 protects the inner surface of the housing 110 and prevents the inner surface of the housing 110 from being damaged by arc discharge. In addition, reaction by-products generated during the substrate processing process are prevented from being deposited on the inner wall of the housing 110.

The liner 130 is cheaper than the housing 110 and is easy to replace. Therefore, when the liner 130 is damaged due to arc discharge, the operator can replace the liner 130 with a new liner 130. A support ring 131 is formed on the top of the liner 130. The support ring 131 is provided as a ring-shaped plate and protrudes to the outside of the liner 130 along the circumference of the liner 130. The support ring 131 is placed on the top of the housing 110 and supports the liner 130.

The support unit 200 supports the substrate in the processing space inside the process chamber 100. For example, the support unit 200 is disposed inside the housing 110. The support unit 200 supports the substrate W. The support unit 200 may be provided in an electrostatic chuck method that adsorbs the substrate W using an electrostatic force. Alternatively, the support unit 200 may support the substrate W in various ways such as mechanical clamping. Hereinafter, the support unit 200 provided in the electrostatic chuck method will be described.

The support unit 200 includes a support plate 220, an electrostatic electrode 223, a flow path forming plate 230, a focus ring 240, an insulating plate 250, and a lower cover 270. The support unit 200 may be provided to be spaced apart from the bottom surface of the housing 110 in the process chamber 100 to the top.

The support plate 220 is located at the upper end of the support unit 200. The support plate 220 is provided with a disk-shaped dielectric substance. A substrate W is placed on the upper surface of the support plate 220. A first supply passage 221 used as a passage through which heat transfer gas is supplied to the bottom surface of the substrate W is formed in the support plate 220.

The electrostatic electrode 223 is embedded in the support plate 220. The electrostatic electrode 223 is electrically connected to the first lower power source 223a. Electrostatic force acts between the electrostatic electrode 223 and the substrate W by the current applied to the electrostatic electrode 223, and the substrate W is adsorbed to the support plate 220 by the electrostatic force.

The flow path forming plate 230 is located under the support plate 220. The lower surface of the support plate 220 and the upper surface of the flow path forming plate 230 may be bonded to each other by an adhesive 236. A first circulation passage 231, a second circulation passage 232, and a second supply passage 233 are formed in the passage forming plate 230.

The first circulation passage 231 is provided as a passage through which heat transfer gas circulates. The second circulation passage 232 is provided as a passage through which the cooling fluid circulates. The second supply passage 233 connects the first circulation passage 231 and the first supply passage 221. The first circulation passage 231 is provided as a passage through which heat transfer gas circulates. The first circulation passage 231 may be formed in a spiral shape inside the passage forming plate 230. Alternatively, the first circulation flow path 231 may be arranged such that ring-shaped flow paths having different radii from each other have the same center. Each of the first circulation passages 231 may communicate with each other. The first circulation passages 231 are formed at the same height.

The first circulation passage 231 is connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium is stored in the heat transfer medium storage unit 231a. The heat transfer medium contains an inert gas. The heat transfer medium may include helium (He) gas. The helium gas is supplied to the first circulation passage 231 through the supply line 231b, and is supplied to the bottom of the substrate W through the second supply passage 233 and the first supply passage 221 in sequence. The helium gas serves as a medium to help heat exchange between the substrate W and the support plate 220. Accordingly, the overall temperature of the substrate W is uniform.

The second circulation passage 232 is connected to the cooling fluid storage unit 232a through the cooling fluid supply line 232c. The cooling fluid is stored in the cooling fluid storage unit 232a. A cooler 232b may be provided in the cooling fluid storage unit 232a. The cooler 232b cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation passage 232 through the cooling fluid supply line 232c circulates along the second circulation passage 232 to cool the passage forming plate 230. As the flow path forming plate 230 is cooled, the support plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature. For the same reason as described above, in general, the lower portion of the focus ring 240 is provided at a lower temperature than the upper portion.

The focus ring 240 is disposed in the edge region of the support unit 200. The focus ring 240 has a ring shape and is provided to surround the support plate 220. For example, the focus ring 240 is disposed along the circumference of the support plate 220 to support the outer region of the substrate W.

The insulating plate 250 is located under the flow path forming plate 230. The insulating plate 250 is made of an insulating material, and electrically insulates the flow path forming plate 230 and the lower cover 270. The lower cover 270 is located at the lower end of the support unit 200. The lower cover 270 is positioned to be spaced apart from the bottom surface of the housing 110 to the top. The lower cover 270 has a space with an open top surface formed therein. The upper surface of the lower cover 270 is covered by the insulating plate 250. Accordingly, the outer radius of the cross-section of the lower cover 270 may be provided with the same length as the outer radius of the insulating plate 250. A lift pin or the like may be positioned in the inner space of the lower cover 270 to receive the substrate W to be transferred from an external transfer member and to be seated on the support plate.

The lower cover 270 has a connection member 273. The connection member 273 connects the outer surface of the lower cover 270 and the inner wall of the housing 110. A plurality of connection members 273 may be provided on the outer surface of the lower cover 270 at regular intervals. The connection member 273 supports the support unit 200 inside the process chamber 100. In addition, the connection member 273 is connected to the inner wall of the housing 110 so that the lower cover 270 is electrically grounded.

A first power line 223c connected to the first lower power source 223a, a heat transfer medium supply line 231b connected to the heat transfer medium storage unit 231a, and a cooling fluid supply line 232c connected to the cooling fluid storage unit 232a. ) And the like extend into the lower cover 270 through the inner space of the connection member 273.

The gas supply unit 300 supplies gas to the processing space inside the process chamber 100. The gas supplied by the gas supply unit 300 includes a process gas used for processing a substrate. In addition, the gas supply unit 300 may supply a cleaning gas used to clean the inside of the process chamber 100.

The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330. The gas supply nozzle 310 is installed in the center of the cover 120. An injection hole is formed at the bottom of the gas supply nozzle 310. The injection port is located under the cover 120 and supplies gas into the process chamber 100. The gas supply line 320 connects the gas supply nozzle 310 and the gas storage unit 330. The gas supply line 320 supplies the gas stored in the gas storage unit 330 to the gas supply nozzle 310. A valve 321 is installed in the gas supply line 320. The valve 321 opens and closes the gas supply line 320 and adjusts the flow rate of the gas supplied through the gas supply line 320.

The plasma source 400 constitutes a high-frequency unit, and generates plasma from the gas supplied into the processing space inside the process chamber 100. The plasma source 400 is provided outside the processing space of the process chamber 100. According to an embodiment, an inductively coupled plasma (ICP) source may be used as the plasma source 400.

The plasma source 400 includes an antenna chamber 410, an antenna 420, and a plasma power source 430. The antenna chamber 410 is provided in a cylindrical shape with an open lower portion. The antenna chamber 410 is provided with a space therein. The antenna chamber 410 is provided to have a diameter corresponding to the process chamber 100. The lower end of the antenna chamber 410 is provided to be detachable from the cover 120. The antenna 420 is disposed inside the antenna chamber 410. The antenna 420 is provided as a spiral coil wound a plurality of times, and is connected to the plasma power source 430. The antenna 420 receives power from the plasma power source 430. The plasma power source 430 may be located outside the process chamber 100. The antenna 420 to which power is applied may form an electromagnetic field in the processing space of the process chamber 100. The process gas is excited in a plasma state by an electromagnetic field.

The exhaust unit 500 is located between the inner wall of the housing 110 and the support unit 200. The exhaust unit 500 includes an exhaust plate 510 in which a through hole 511 is formed. The exhaust plate 510 is provided in an annular ring shape. A plurality of through holes 511 are formed in the exhaust plate 510. The process gas provided in the housing 110 passes through the through holes 511 of the exhaust plate 510 and is exhausted to the exhaust hole 102. The flow of the process gas may be controlled according to the shape of the exhaust plate 510 and the shape of the through holes 511.

Heaters 225 are embedded in the support plate 220. The heaters 225 are located under the electrostatic electrode 223. The heaters 225 may be provided in different regions within the support plate 220 in order to heat the support unit 200 for different regions of the substrate W. The heater power supply 229 is provided to apply heating power to the heaters 225.

The filter unit 228 cuts off high frequencies from heat generating power supplied by the heater power supply unit 229. In one embodiment, when a 13.56MHz high-frequency power is applied by the plasma source 400 to generate plasma, the filter unit 228 uses, for example, 60Hz alternating current (AC) power, such as heating power, to the heater cables 226a~ d), and may be designed to block the 13.56MHz RF from flowing into the heater power supply unit 229. The filter unit 228 may be provided as elements 228a to d such as a capacitor and an inductor.

The plurality of heater cables 226a to d are connected between the filter unit 228 and the heaters 225, and transmit the heating power applied from the heater power supply unit 229 to the heaters 225. The heater cables 226a to d may extend into the lower cover 270 through the inner space of the connection member 273. The heaters 225 are electrically connected to the heater cables 226a to d, and generate heat by resisting the heating power (current) applied from the heater cables 226a to d. The generated heat is transferred to the substrate W through the support plate 220. The substrate W is maintained at a predetermined temperature by the heat generated by the heaters 225.

The impedance control unit 227 is connected to a plurality of heater cables 226a to d, and a throughput (eg, etch rate) for each region of the substrate W by adjusting the impedance of the plurality of heater cables 226a to d Control. In an embodiment, the impedance adjusting unit 227 may include variable capacitors C1 to C4 respectively connected between a plurality of heater cables 226a to d and a ground.

In the present invention, a verification apparatus and verification method for improving the reliability of a high-frequency unit are disclosed. In order to reduce the failure rate of high-frequency units included in the existing substrate processing apparatus and improve stability, it is possible to verify the condition of each unit before shipment and increase the completeness of the facility.

10 is a flowchart of a substrate processing method according to an embodiment of the present invention. Referring to FIG. 10, the substrate processing method according to the present invention may include setting a process chamber impedance to a variable load matching unit of a virtual chamber. The impedance of the process chamber is set to the variable load matching unit of the virtual chamber 10, and the high frequency unit 20 to be verified is connected to the variable load matching unit of the virtual chamber 10. When the desired impedance of the process chamber is set, a high frequency unit can be connected to the variable negative wave matching unit and a high frequency can be applied.

Thereafter, the verification unit 30 outputs control signals related to a process recipe for processing a substrate in the process chamber to the virtual chamber 10 and the high frequency unit 20. Control signals transmitted from the verification unit 30 to the virtual chamber 10 and the high frequency unit 20 may change in time series according to an actual process recipe.

The verification unit 30 collects process parameters (voltage/current, power, impedance, etc.) from the virtual chamber 10 and the high frequency unit 20, and verifies the high frequency unit 20 based on the collected process parameters. .

Collecting process parameters from the high frequency unit may use a sensor connected to the impedance matching unit 22. The efficiency of the impedance matching unit 22 may be verified by using the collected process parameter power or impedance.

According to an embodiment of the present invention, even if the high frequency unit is not connected to a process chamber in which the actual substrate is processed, the high frequency unit can be verified, and thus the high frequency unit can be freely verified. In addition, it is possible to verify the pre-shipment condition of the high-frequency unit, and to check in advance in the case of a unit that has a problem. Therefore, it is possible to increase the reliability of the high-frequency unit by reducing the occurrence rate of the high-frequency unit error, and improve the completeness of the facility by analyzing the high-frequency characteristics in advance. In addition, when a plurality of high-frequency units are designed and manufactured, a plurality of high-frequency units can be verified in parallel without the need to sequentially connect a plurality of high-frequency units to a process chamber to test the performance of the high-frequency units.

The process recipe can be set in advance by the user, and can be set from step 1 to multiple steps. Through this function, the actual process effect can be reproduced equally. The verification device can control and generate alarms in the same way as in an actual facility.

The above description is merely illustrative of the technical idea of the present invention, and those of ordinary skill in the art to which the present invention pertains will be able to make various modifications and variations without departing from the essential characteristics of the present invention. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain the technical idea, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

10: virtual chamber
20: high frequency unit
22: impedance matching unit
24: sensor
24a: first sensor
24b: second sensor
24c: third sensor
26: high frequency generation unit
28: pulse controller
30: verification unit
40: pile load

Claims (17)

A virtual chamber including a variable load matching unit configured to enable impedance modulation to implement an impedance of a process chamber in which the substrate is processed;
A high frequency unit provided to apply a high frequency to the virtual chamber; And
Includes a verification unit,
The high frequency unit,
A high frequency generator for generating a high frequency;
An impedance matching unit for matching an impedance between the high frequency generator and the virtual chamber; And
Including; a sensor connected to the impedance matching unit,
The verification unit outputs a control signal related to a process recipe to the high frequency unit, collects a process parameter according to the control signal from the high frequency unit, and verifies the performance of the impedance matching unit.
The method of claim 1,
A high-frequency unit verification apparatus for a substrate processing apparatus further comprising a dummy load connected to the virtual chamber and having a 50Ω resistance.
The method of claim 2,
The high frequency unit,
A high-frequency unit verification apparatus of a substrate processing apparatus further comprising a pulse controller connected to the high-frequency generator and receiving a pulse input value from the verification unit and controlling the high-frequency pulse.
The method according to any one of claims 1 to 3,
The sensor is a high-frequency unit verification apparatus of a substrate processing apparatus that is connected to the inside or outside of the impedance matching unit.
The method of claim 4,
The high frequency unit verification apparatus of a substrate processing apparatus including a first sensor connected to the input terminal of the impedance matching unit.
The method of claim 5,
The high frequency unit verification apparatus of a substrate processing apparatus further comprises a second sensor connected to the output terminal of the impedance matching unit.
The method of claim 5,
A high-frequency unit verification apparatus of a substrate processing apparatus further comprising a third sensor connected to the output terminal of the virtual chamber.
The method of claim 4,
When the sensor is connected to the inside of the impedance matching unit, the high frequency unit verification apparatus of a substrate processing apparatus, characterized in that for measuring a voltage.
The method of claim 4,
When the sensor is connected to the outside of the impedance matching unit, the high-frequency unit verification apparatus of a substrate processing apparatus, characterized in that measuring power.
The method of claim 5,
The verification unit is a high-frequency unit verification device of a substrate processing apparatus that measures the efficiency of a cable connected to the high-frequency generation unit and the impedance matching unit by using a sensor incorporated in the high-frequency generation unit and the first sensor of the impedance matching unit. .
The method of claim 6,
The verification unit measures the efficiency of the impedance matching unit through the first sensor connected to the input terminal of the impedance matching unit and the second sensor connected to the output terminal of the impedance matching unit.
The method of claim 7,
The verification unit is a high-frequency unit verification apparatus of a substrate processing apparatus that measures the efficiency of the impedance matching unit and the virtual chamber through the first sensor connected to the input terminal of the impedance matching unit and the third sensor connected to the output terminal of the virtual chamber. .
The method of claim 4,
The verification unit
A high-frequency unit verification apparatus of a substrate processing apparatus that performs impedance analysis through data provided through the sensor.
Setting an impedance of a process chamber in which a substrate is processed to a variable load matching unit of a virtual chamber capable of impedance modulation;
Connecting a high frequency unit for applying a high frequency to the variable load matching unit;
Outputting, by a verification unit, a control signal related to a process recipe to the high-frequency unit; And
The verification unit measuring efficiency using a sensor of an impedance matching unit included in the high frequency unit; Including,
The verification unit verifies the performance of the impedance matching unit by collecting process parameters according to the control signal from the high frequency unit.
The method of claim 14,
A method of verifying a high frequency unit of a substrate processing apparatus further comprising connecting a dummy load having a 50Ω resistance to the virtual chamber.
The method of claim 15,
The high frequency unit is connected to a high frequency generator for generating a high frequency, an impedance matching unit for matching an impedance between the high frequency generator and the process chamber, and is connected to the high frequency generator and receives a pulse input value from the verification unit. A high-frequency unit verification method of a substrate processing apparatus comprising: a pulse controller for controlling the high-frequency pulse, and a sensor for measuring the high-frequency power input from the high-frequency generation unit to the impedance matching unit and transmitting the measured high-frequency power to the verification unit.
The method according to any one of claims 14 to 16,
The verification unit
A method of verifying a high frequency unit of a substrate processing apparatus for measuring the efficiency of the impedance matching unit or a cable connecting the high frequency generation unit generating the high frequency and the impedance matching unit.

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